WO2021217606A1 - 显示面板及其制作方法、显示装置 - Google Patents

显示面板及其制作方法、显示装置 Download PDF

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Publication number
WO2021217606A1
WO2021217606A1 PCT/CN2020/088374 CN2020088374W WO2021217606A1 WO 2021217606 A1 WO2021217606 A1 WO 2021217606A1 CN 2020088374 W CN2020088374 W CN 2020088374W WO 2021217606 A1 WO2021217606 A1 WO 2021217606A1
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WIPO (PCT)
Prior art keywords
area
bending
display panel
film layer
functional
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PCT/CN2020/088374
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English (en)
French (fr)
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WO2021217606A9 (zh
Inventor
刘庭良
董向丹
王俊喜
张毅
胡明
王梦奇
王思雨
张顺
杨路路
代洁
杨慧娟
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to EP20900751.7A priority Critical patent/EP4145431A4/en
Priority to US17/265,057 priority patent/US20210384466A1/en
Priority to PCT/CN2020/088374 priority patent/WO2021217606A1/zh
Priority to CN202080000653.3A priority patent/CN114072869B/zh
Publication of WO2021217606A1 publication Critical patent/WO2021217606A1/zh
Publication of WO2021217606A9 publication Critical patent/WO2021217606A9/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a display panel, a manufacturing method thereof, and a display device.
  • Active matrix organic light emitting diode (English: Active-matrix organic light emitting diode, abbreviated as: AMOLED) displays have gradually replaced traditional liquid crystal displays and are widely used in mobile phones due to their fast response, high contrast, and wide viewing angle. Screen, computer monitor, full-color computer.
  • the AMOLED display screen will be curved at the left, right, upper and lower borders to achieve a borderless display effect.
  • the purpose of the present disclosure is to provide a display panel, a manufacturing method thereof, and a display device.
  • a first aspect of the present disclosure provides a display panel, including: a substrate and a functional film layer disposed on the substrate, and further including: a first bending zone that can be bent in a first direction, and can be bent in a second direction A second bending zone that is folded, and a third bending zone located between the first bending zone and the second bending zone, the first direction intersects the second direction;
  • the functional film layer includes a non-hollowed area, the non-hollowed area is located in at least one of the first bending area and the second bending area; the functional film layer is located in the third bending area
  • the area includes a plurality of functional vias arranged at intervals.
  • the functional film layer includes a first conductive pattern, the first conductive pattern includes a plurality of first conductive vias, and the plurality of first conductive vias are located in the first bending area, the In at least one of the second bending zone and the third bending zone.
  • the functional film layer further includes: a first inorganic layer laminated with the first conductive pattern, the first inorganic layer includes a plurality of first inorganic vias, and the plurality of first inorganic vias The hole is located in at least one of the first bending zone, the second bending zone, and the third bending zone; the orthographic projection of the first inorganic via on the substrate is the same as the The orthographic projection of the first conductive via on the substrate does not overlap.
  • the functional film layer further includes: a first organic layer and a second conductive pattern, the first organic layer is located between the first conductive pattern and the second conductive pattern; the second conductive pattern The pattern includes a plurality of second conductive vias, and the plurality of second conductive vias are located in at least one of the first bending area, the second bending area, and the third bending area; The orthographic projection of the first conductive via on the substrate does not overlap with the orthographic projection of the second conductive via on the substrate.
  • the orthographic projection of the first conductive pattern on the substrate and the orthographic projection of the second conductive pattern on the substrate have a first overlapping area, and the first conductive pattern and the second The two conductive patterns are coupled in the first overlapping area, and the orthographic projection of the first overlapping area on the substrate does not overlap with the orthographic projection of the third bending area on the substrate.
  • the width of the first conductive pattern in the third bending region is greater than the width of the first conductive pattern in the first bending region, and the width of the first conductive pattern in the first bending region The width of the second bending zone.
  • the display panel further includes an entry area, and along a direction approaching the entry area, the width of the first conductive pattern in the first direction gradually increases.
  • the display panel further includes: a data line lead-out line; the orthographic projection of the data line lead-out line on the substrate and the orthographic projection of the functional film layer on the substrate have a second overlapping area
  • the second overlapping area is located in at least one of the first bending area, the second bending area, and the third bending area.
  • the display panel further includes a transistor structure, and the source and drain of the transistor structure are arranged in the same layer as the first conductive pattern.
  • the aperture in the third direction of the functional via located in the third bending area is equal to the aperture in the fourth direction.
  • the portion of the functional film layer located in the first bending area includes a plurality of functional vias arranged at intervals, and the diameter of the functional vias located in the first bending area along the third direction is larger than that along the first bending area. Aperture in four directions.
  • the multiple functional vias include a first via and a second via, and along the fourth direction, the aperture of the first via is different from the aperture of the second via.
  • the portion of the second bending area of the functional film layer includes a plurality of functional vias arranged at intervals, and the diameter of the functional vias located in the second bending area along the fourth direction is larger than that along the first bending area. Aperture in three directions.
  • the multiple functional vias include a third via and a fourth via, and along the third direction, the aperture of the third via is different from the aperture of the fourth via.
  • the portion of the functional film layer located in the first bending area includes a plurality of functional vias arranged at intervals, and located along the first bending area in a direction pointing to the third bending area.
  • the distribution number of the functional vias in the first bending area gradually increases.
  • the portion of the functional film layer located in the second bending area includes a plurality of functional vias arranged at intervals, along the direction of the second bending area pointing to the third bending area, and located in the direction of the third bending area.
  • the distribution number of the functional vias in the second bending area gradually increases.
  • the functional film layer includes a positive power signal line film layer or a negative power signal line film layer.
  • the functional film layer includes a positive power signal line film layer and a negative power signal line film layer;
  • the display panel further includes: a gate driving circuit, an orthographic projection of the gate driving circuit on the substrate, an orthographic projection of the positive power source signal line film layer on the substrate, and the negative power source
  • the signal line film layer is between the orthographic projections on the substrate.
  • the first bending area includes a first partial display area and a first partial peripheral wiring area; and/or, the second bending area includes a second partial display area and a second partial peripheral wiring area.
  • the third bending zone is a transition zone from the first bending zone to the second bending zone.
  • the third bending area does not overlap with the display area.
  • the display panel further includes a cofferdam, and the cofferdam includes a first portion located in the first bending area and a second portion located in the second bending area.
  • the cofferdam further includes a third part located in the third bending zone.
  • a second aspect of the present disclosure provides a display device including the above-mentioned display panel.
  • a third aspect of the present disclosure provides a method for manufacturing a display panel.
  • the display panel includes a first bending zone that can be bent in a first direction, and a device that can be bent in a second direction.
  • a second bending zone, and a third bending zone located between the first bending zone and the second bending zone, the first direction intersects the second direction;
  • the manufacturing method includes:
  • a functional film layer is fabricated on a substrate, the functional film layer includes a non-hollowed area, and the non-hollowed area is located in at least one of the first bending area and the second bending area; the functional film
  • the part of the layer located in the third bending area includes a plurality of functional vias arranged at intervals.
  • FIG. 1a is a schematic diagram of a first structure of a display panel provided by an embodiment of the present disclosure
  • Fig. 1b is an enlarged schematic diagram of part A in Fig. 1b;
  • FIG. 2 is a schematic diagram of a second structure of a display panel provided by an embodiment of the disclosure.
  • FIG. 3 is a schematic diagram of a third structure of a display panel provided by an embodiment of the disclosure.
  • FIG. 4 is a schematic diagram of the functional film provided by an embodiment of the present disclosure with a functional via in a third bending area;
  • FIG. 5 is a schematic diagram of a first conductive pattern provided with a first conductive via in a third bending area according to an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of a laminated structure of a first conductive pattern and a first inorganic layer provided by an embodiment of the disclosure
  • Fig. 7 is a schematic cross-sectional view along the direction B1B2 in Fig. 6;
  • FIG. 8 is a schematic diagram of a laminated structure of a first conductive pattern and a second conductive pattern provided by an embodiment of the present disclosure
  • Fig. 9 is a schematic cross-sectional view taken along the direction C1C2 in Fig. 8;
  • FIG. 10 is a schematic cross-sectional view of a part of the display area of the display panel provided by an embodiment of the present disclosure
  • FIG. 11 is a schematic diagram of the first conductive pattern located in the first bending area at the left frame of the display panel according to an embodiment of the present disclosure
  • FIG. 12 is a schematic diagram of the first conductive pattern located in the third bending area at the lower left corner of the display panel according to an embodiment of the present disclosure
  • FIG. 13 is a schematic diagram of the first conductive pattern located in the second bending area at the lower frame of the display panel according to an embodiment of the present disclosure
  • FIG. 14 is a schematic diagram of overlapping the functional film layer and the data line lead-out line in the third bending area provided by the embodiments of the present disclosure
  • 15 is a schematic diagram of a functional via located in a first bending area provided by an embodiment of the present disclosure
  • FIG. 16 is a schematic diagram of a functional via located in a first bending transition area provided by an embodiment of the present disclosure
  • FIG. 17 is a schematic diagram of a functional via located in a second bending area provided by an embodiment of the present disclosure.
  • FIG. 18 is a schematic diagram of a functional via located in a second bending transition area provided by an embodiment of the disclosure.
  • FIG. 19 is a schematic diagram of the layout of the positive power supply signal line film layer and the negative power supply signal line film layer provided by an embodiment of the disclosure.
  • the AMOLED display screen will be curved at the left, right, upper and lower borders to achieve a borderless display effect.
  • a bendable junction area will be produced, that is, the intersection area of up and down bending and left and right bending. This area needs to bear both up and down and left and right.
  • the bending of the screen is a high risk area for cracks in the functional film layer of the screen.
  • the present disclosure provides a display panel, the long side of the display panel can be bent left and right in a first direction to form a first bending area 21, and the short side of the display panel can be up and down in a second direction. Bent to form a second bending area 22, and a third bending area 23 is formed at the four corners of the display panel.
  • the third bending area 23 can be simultaneously along the first direction and the second Double bending is performed in the direction, so there will be larger stress wrinkles in the third bending zone.
  • part of the display area 24 and part of the frame area of the display panel enter the third bending area 23. Since most of the functional graphics set in the display area 24 have a small area, The portion of the display area that enters the third bending area generally does not cause stress wrinkles.
  • the part of the frame area includes the fan-out area 28, the area where the positive power supply signal line film layer 31 is laid out, the area where the gate drive circuit 33 is laid out, the area where the negative power supply signal line film layer 32 is laid out, and the cutting area.
  • the positive power supply signal line film layer 31 and the negative power supply signal line film layer 32 are both approximately 0.2mm to 0.4mm in width (including endpoints)
  • Large-area metal layer the large-area metal layer is prone to cracks in the double-folded state, thereby affecting the characteristics of the display screen.
  • the third bending zone is also provided with an inorganic layer, and the inorganic layer has poor flexibility. In the double bending state, cracks are also prone to occur, which affects the characteristics of the display screen.
  • an embodiment of the present disclosure provides a display panel, including: a substrate and a functional film layer 30 disposed on the substrate, and further including: a first bendable in a first direction The bending zone 21, the second bending zone 22 that can be bent in the second direction, and the third bending zone 23 located between the first bending zone 21 and the second bending zone 22, so The first direction intersects the second direction; the functional film layer 30 includes a non-hollowed area, and the non-hollowed area is located in at least one of the first bending area 21 and the second bending area 22 In the region; the portion of the functional film layer 30 located in the third bending area 23 includes a plurality of functional vias 300 arranged at intervals.
  • the substrate may optionally be a flexible substrate.
  • the substrate includes a polyimide (PI) substrate.
  • PI polyimide
  • the first direction includes the direction of bending left and right with the Y direction as the axis of rotation
  • the second direction includes the direction of bending up and down with the X direction as the axis of rotation
  • Bending left and right in the first direction the first bending area 21 may specifically include a left frame area and a right frame area of the display panel
  • the second bending area 22 is bent up and down along the second direction
  • the second bending area 22 may specifically include an upper frame area and a lower frame area of the display panel
  • the third bending area 23 is simultaneously bent along the first direction and the second direction
  • the third bending area 23 is formed as a mixed force-receiving area.
  • the third bending area 23 may specifically include four corner areas of the display panel, namely, the upper left corner area, the lower left corner area, the upper right corner area, and the lower right corner. Area.
  • the display panel includes a functional film layer 30, and the functional film layer 30 may specifically include a conductive pattern and/or an inorganic insulating film layer, but is not limited thereto.
  • the functional film layer 30 includes a non-hollowed area located in at least one of the first bending area 21 and the second bending area 22; the functional film layer 30 includes a hollow area located in at least one of the first bending area 21 and the second bending area 22; the functional film layer 30 is located in the third bending area 23
  • the part may include a plurality of functional vias 300 arranged at intervals, and the plurality of functional vias 300 form a hollow area in the third bending area 23.
  • the positive power signal line film layer 31 includes a first hollow area 310 and a first hollow area 310.
  • the negative power signal line film layer 32 includes a second hollowed area 320 and a second non-hollowed area 321.
  • the portion of the functional film layer 30 located in the third bending area 23 includes a plurality of functional vias 300 arranged at intervals, so that the functional film layer 30 can be better.
  • the display panel better improves the reliability of the functional film layer 30 in the double bending area (ie, the third bending area 23), thereby facilitating the achievement of the special topography of the display panel and the improvement of reliability.
  • the functional film layer 30 includes a first conductive pattern 34, the first conductive pattern 34 includes a plurality of first conductive vias 340, and the plurality of first conductive vias
  • the hole 340 is located in at least one of the first bending area 21, the second bending area 22 and the third bending area 23.
  • the functional film layer 30 has a variety of specific structures.
  • the functional film layer 30 includes a first conductive pattern 34, and the first conductive pattern 34 includes a structure located in the first bending area 21.
  • the first conductive pattern 34 is located in the first bending area 21, the second bending area 22 and the first bending area. In one or more areas of the third bending area 23, the stress caused by bending can be well released, thereby effectively reducing the first conductive pattern 34 in the first bending area 21. , The probability of cracks and transmission cracks in one or more of the second bending zone 22 and the third bending zone 23.
  • the functional film layer 30 further includes: a first inorganic layer 35 laminated with the first conductive pattern 34, and the first inorganic layer 35 includes more A first inorganic via 350, the plurality of first inorganic vias 350 are located in at least one of the first bending area 21, the second bending area 22, and the third bending area 23 In; the orthographic projection of the first inorganic via 350 on the substrate, and the orthographic projection of the first conductive via 340 on the substrate does not overlap.
  • the functional film layer 30 may specifically include a first conductive pattern 34 and a first inorganic layer 35 that are stacked.
  • the first conductive pattern 34 is located between the substrate and the first inorganic layer 35.
  • the first inorganic layer 35 is located between the substrate and the first conductive pattern 34.
  • the first inorganic layer 35 includes a plurality of first inorganic peroxides located in one or more of the first bending area 21, the second bending area 22, and the third bending area 23. Hole 350, the first inorganic layer 35 of this structure can well release the stress generated by bending, thereby effectively reducing the first inorganic layer 35 in the first bending area 21, the second The probability of cracks occurring and propagating cracks in one or more of the bending zone 22 and the third bending zone 23.
  • the above-mentioned arrangement of the orthographic projection of the first inorganic via 350 on the substrate does not overlap with the orthographic projection of the first conductive via 340 on the substrate, and specifically includes: In one or more of the region 21, the second bending region 22, and the third bending region 23, the orthographic projection of the first inorganic via 350 on the substrate is the same as that of the first inorganic via 350 on the substrate.
  • the orthographic projection of a conductive via 340 on the substrate does not overlap.
  • the orthographic projection of the first inorganic via 350 on the substrate does not overlap with the orthographic projection of the first conductive via 340 on the substrate, so that it is in a direction perpendicular to the substrate.
  • the first conductive vias 340 and the first inorganic vias 350 are arranged staggered. This distribution makes the functional vias 300 included on the functional film layer 30 (that is, the first inorganic vias 350 and the second inorganic vias 350)
  • a conductive via 340) can be evenly distributed, which is more beneficial for the functional film layer 30 to release the stress caused by bending.
  • the metal material and the inorganic material for making the inorganic layer have different lattice sizes, so that the interface between the first conductive pattern 34 and the first inorganic layer 35 is different. There are interface voids, and when the stress propagates in the first inorganic layer 35, the interface between the first inorganic layer 35 and the first conductive pattern 34 can be well released.
  • the functional film layer 30 further includes: a first organic layer 37 and a second conductive pattern 36, and the first organic layer 37 is located on the first conductive pattern. 34 and the second conductive pattern 36; the second conductive pattern 36 includes a plurality of second conductive vias 360, the plurality of second conductive vias 360 are located in the first bending area 21, the In at least one area of the second bending area 22 and the third bending area 23; the orthographic projection of the first conductive via 340 on the substrate is the same as the second conductive via 360 The orthographic projections on the substrate do not overlap.
  • the functional film layer 30 includes a first conductive pattern 34 and a second conductive pattern 36 disposed opposite to each other, and a first organic layer 37 located between the first conductive pattern 34 and the second conductive pattern 36 .
  • the second conductive pattern 36 includes a plurality of second conductive vias located in one or more of the first bending area 21, the second bending area 22, and the third bending area 23. Hole 360, the second conductive pattern of this structure can well release the stress caused by bending, thereby effectively reducing the two conductive patterns 36 in the first bending area 21 and the second bending Probability of cracks and propagation of cracks in one or more of the zone 22 and the third bending zone 23.
  • the above-mentioned arrangement of the orthographic projection of the first conductive via 340 on the substrate does not overlap with the orthographic projection of the second conductive via 360 on the substrate, and specifically includes: In one or more regions of the region 21, the second bending region 22, and the third bending region 23, the orthographic projection of the first conductive via 340 on the substrate is the same as that of the first conductive via 340 on the substrate.
  • the orthographic projections of the two conductive vias 360 on the substrate do not overlap.
  • the orthographic projection of the first conductive via 340 on the substrate does not overlap with the orthographic projection of the second conductive via 360 on the substrate, so that it is in a direction perpendicular to the substrate.
  • the first conductive vias 340 and the second conductive vias 360 are arranged staggered. This distribution makes the functional vias 300 included on the functional film layer 30 (the first conductive vias and the second conductive vias The via holes) can be evenly distributed, which is more beneficial to the functional film layer 30 to release the stress caused by bending.
  • the first organic layer 37 generally has good flexibility, generally, no via is formed on the first organic layer 37.
  • first conductive pattern 34 and the second conductive pattern 36 There are various specific structures and layouts of the first conductive pattern 34 and the second conductive pattern 36. The following is an example of the specific structure and layout of the first conductive pattern 34 and the second conductive pattern 36 sexual description.
  • the display panel further includes:
  • a plurality of sub-pixel driving circuits each of the sub-pixel driving circuits includes a capacitor structure and a plurality of transistor structure TFTs.
  • the plurality of transistor structure TFTs include at least one driving transistor with a driving function and a plurality of switching transistors with a switching function. During operation, the plurality of transistor structure TFTs work together to output a driving signal from the output terminal of the driving transistor.
  • Each of the transistor structure TFTs includes an active layer, a gate, a source and a drain.
  • the capacitor structure includes a first electrode plate 1081 and a second electrode plate 1082 arranged oppositely, and the capacitor structure can be used as a storage capacitor in the sub-pixel driving circuit.
  • the anode patterns 101 are arranged on the side of the plurality of sub-pixel driving circuits facing away from the substrate 10, and the anode patterns 101 correspond to the sub-pixel driving circuits in a one-to-one correspondence.
  • the organic light-emitting material layer 105 and the cathode 106 are located between the corresponding anode pattern 101 and the cathode 106. It should be noted that the organic light emitting material layer 105 may include an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer that are stacked, but are not limited thereto.
  • each of the conductive connecting portions 102 is respectively connected to the corresponding anode pattern 101 and the corresponding sub-pixel driving circuit Coupling.
  • the driving transistor includes a source electrode and a drain electrode arranged in the same layer and the same material, one of the source electrode and the drain electrode is used as the input electrode of the driving transistor, and the other of the source electrode and the drain electrode is used as For the output electrode of the driving transistor, the conductive connecting portion 102 is coupled to the output electrode of the driving transistor.
  • the transistor TFT in FIG. 10 can be used as the driving transistor, and can also be used as a switching transistor connected between the output electrode of the driving transistor and the anode pattern 101.
  • the display panel further includes: a buffer layer 107, a first flat layer PLN1, a second flat layer PLN2, and a pixel defining layer PDL; it also includes an encapsulation structure, the encapsulation structure includes an edge away from the The first inorganic encapsulation layer 1091, the organic encapsulation layer 1092, and the second inorganic encapsulation layer 1093 are sequentially stacked in the direction of the substrate 10.
  • the conductive connecting portion 102 and the second flat layer PLN2 included in the display panel are both optional structures.
  • the driving signal generated by each sub-pixel driving circuit is transmitted to the corresponding anode pattern 101 through the corresponding conductive connection portion 102, and the anode pattern 102 and the cathode 106 are jointly controlled.
  • the organic light-emitting material layer 105 is made to emit light, so as to realize the display function of the display substrate.
  • both the first conductive pattern 34 and the second conductive pattern 36 can be produced in the same patterning process as some functional structures in the display panel.
  • the first conductive pattern 34 and the gate of the transistor structure TFT are made of the same material, and both are formed on the surface of the first gate insulating layer of the display panel facing away from the substrate 10, namely
  • the first conductive pattern 34 and the gate electrode of the transistor structure TFT are made of the same layer and the same material;
  • the second conductive pattern 36 is made of the same material as the source and drain electrodes of the transistor structure TFT, and both are formed
  • the second insulating layer 103 in the display panel faces away from the surface of the substrate 10, that is, the first conductive pattern 34 and the source and drain electrodes of the transistor structure TFT are arranged in the same layer and the same material.
  • the first conductive pattern 34 and the second electrode plate 1082 of the capacitor structure are made of the same material, and both are formed on the surface of the second gate insulating layer of the display panel facing away from the substrate 10 That is, the first conductive pattern 34 and the second electrode plate 1082 of the capacitor structure are arranged in the same layer and the same material; the second conductive pattern 36 is made of the same material as the source and drain of the transistor structure TFT , And the second insulating layer 103 formed in the display panel faces away from the surface of the substrate 10, that is, the second conductive pattern 36 and the source and drain electrodes of the transistor structure TFT are arranged in the same layer and the same material.
  • the first conductive pattern 34 and the source and drain of the transistor structure TFT are made of the same material, and both are formed on the surface of the second insulating layer 103 in the display panel facing away from the substrate 10 That is, the first conductive pattern 34 and the source and drain electrodes of the transistor structure TFT are arranged in the same layer and the same material; the second conductive pattern 36 and the conductive connecting portion 102 are made of the same material, and both are formed On the surface of the third insulating layer 104 facing away from the substrate 10, that is, the second conductive pattern 36 and the conductive connecting portion 102 are arranged in the same layer and the same material.
  • the functional film layer 30 includes the first conductive pattern 34, the second conductive pattern 36, and the third conductive pattern; the first conductive pattern 34 is the same as the gate of the transistor structure TFT.
  • the first gate insulating layer of the display panel is formed on the surface of the substrate 10 facing away from the surface of the substrate 10, that is, the first conductive pattern 34 and the gate of the transistor structure TFT are made of the same layer and the same material;
  • the second conductive pattern 36 and the second electrode plate 1082 of the capacitor structure are made of the same material, and both are formed on the surface of the second gate insulating layer of the display panel facing away from the substrate 10, that is, the The second conductive pattern 36 and the second electrode plate 1082 of the capacitor structure are arranged in the same layer and the same material; the third conductive pattern and the source and drain of the transistor structure TFT are made of the same material and are formed on
  • the second insulating layer 103 in the display panel faces away from the surface of the substrate 10, that is, the third conductive pattern is arranged in the same layer
  • the above-mentioned “same layer” refers to a layer structure formed by using the same film forming process to form a film layer for forming a specific pattern, and then using the same mask plate through a patterning process.
  • a patterning process may include multiple exposure, development or etching processes, and the specific patterns in the formed layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights. Or have different thicknesses.
  • the first conductive pattern 34, the second conductive pattern 36, and the third conductive pattern are all arranged in the same layer and the same material as other functional structures included in the display panel, so that the A conductive pattern 34, the second conductive pattern 36, and the third conductive pattern can all be formed in the same patterning process as the other functional structures, so as to avoid the need to make the first conductive pattern 34, the second conductive pattern 34, and the second conductive pattern.
  • the conductive pattern 36 and the third conductive pattern add an additional patterning process, thereby effectively simplifying the manufacturing process of the display substrate and reducing the manufacturing cost of the display substrate.
  • the orthographic projection of the first conductive pattern 34 on the substrate 10 and the orthographic projection of the second conductive pattern 36 on the substrate 10 have a first overlapping area, and the first The conductive pattern 34 and the second conductive pattern 36 are coupled in the first overlap area, and the orthographic projection of the first overlap area on the substrate 10 and the third bending area 23 are in the The orthographic projections on the substrate 10 do not overlap.
  • the first conductive pattern 34 and the second conductive pattern 36 may be jointly formed as the positive power signal line film layer 31 or the negative power signal line film layer 32 in the display panel, but it is not limited thereto. Since the first conductive pattern 34 and the second conductive pattern 36 are coupled in the first overlapping area, the resistance on the first conductive pattern 34 and the second conductive pattern 36 can be effectively reduced, so that When the first conductive pattern 34 and the second conductive pattern 36 are used as the positive power supply signal line film layer 31 or the negative power supply signal line film layer 32, the positive power supply signal line film layer 31 or the negative power supply signal can be reduced more effectively The resistance of the line film layer 32.
  • the above-mentioned arrangement of the orthographic projection of the first overlapping area on the substrate 10 and the orthographic projection of the third bending area 23 on the substrate 10 do not overlap, so that the first overlap can be avoided
  • the region is subjected to bidirectional bending stress, so as to better ensure the coupling performance between the first conductive pattern 34 and the second conductive pattern 36.
  • the first conductive pattern 34 is located at the The width L2 of the third bending zone 23 is greater than the width L1 of the first bending zone 21 and the width L3 of the second bending zone 22.
  • the specific shape of the first conductive pattern 34 is various. For example, it may be arranged in a direction perpendicular to the extension direction of the first conductive pattern 34, and the first conductive pattern 34 is arranged in the third curve.
  • the width of the bending area 23 is greater than its width in the first bending area 21 and its width in the second bending area 22; since the third bending area 23 corresponds to the corner area of the display panel, this This arrangement can enable the first conductive pattern 34 to have a larger area in the corner area, thereby facilitating the ability of the first conductive pattern 34 to withstand large currents in the corner area.
  • the first conductive pattern 34 further includes a portion 341 extending to the display area, and the portion 341 is used for electrical connection with the functional pattern in the display area.
  • the first conductive pattern 34 is used as a power signal line, it is used to provide a power signal for the functional pattern.
  • the display panel further includes an inlet area 26.
  • the first conductive pattern 34 extends along the The width in the first direction gradually increases.
  • the display panel includes an inlet area 26, and the drive chip of the display panel is used to transmit corresponding signals to the inside of the display panel through the inlet area 26.
  • the width of the first conductive pattern 34 along the first direction gradually increases along the direction approaching the entry area 26, as shown in Figs. 11-13, L4, L5, and L6 in the figures gradually change Big.
  • the first conductive pattern 34 with this structure makes it have a larger area in the inlet area 26, which is more conducive to the ability of the first conductive pattern 34 to withstand large currents in the inlet area 26.
  • the display panel further includes: a data line lead-out line 38; the orthographic projection of the data line lead-out line 38 on the substrate 10 and the functional film layer 30 are in place.
  • the orthographic projection on the substrate 10 has a second overlapping area, and the second overlapping area is located in the first bending area 21, the second bending area 22, and the third bending area 23. In at least one area.
  • the display panel includes a data line located in the display area 24 and a data line lead-out line 38 located in the non-display area 24.
  • the data line lead-out line 38 is connected to the data line and the drive chip of the display panel. In between, it is used to transmit the data signal provided by the driving chip to the data line.
  • AMOLED display panel Take the AMOLED display panel as an example.
  • AMOLED display panels have many performance specifications. Among them, the RC (resistance capacitance) loading of the data signal line is a performance specification of the AMOLED display panel, which is important for the pixel charging time of the AMOLED display panel. The impact has a great impact on the display performance of the display panel. Therefore, controlling the loading of the data signal line is very important to the display effect of the display panel.
  • OLED display panels are current-driven and require a stable current to control light emission.
  • OLED display panels usually use low-temperature polysilicon (English: Low Temperature Poly-silicon, abbreviated: LTPS) process.
  • LTPS Low Temperature Poly-silicon
  • the first conductive pattern 34 since the first conductive pattern 34 includes a plurality of first conductive vias 340, the plurality of first conductive vias 340 are located in the first bending area 21, the first In at least one of the second bending area 22 and the third bending area 23; the orthographic projection of the data line lead 38 on the substrate 10 and the functional film layer 30 on the substrate are arranged
  • the orthographic projection on 10 has a second overlapping area located in at least one of the first bending area 21, the second bending area 22, and the third bending area 23 In the area, when the first conductive pattern 34 is used as the positive power signal line film layer 31 in the display panel, the data line lead-out line 38 and the positive power signal line film layer 31 overlap The area can be greatly reduced, so as to achieve the purpose of reducing the loading of the data line connected to the data line lead-out line 38, so that the display panel can achieve a better display effect.
  • the data line lead-out line 38 is generally divided into two parts, and the two parts are respectively laid out in different layers of the display panel.
  • a part of the data line lead-out line 38 is set in the same layer and the same material as the gate electrode of the transistor structure TFT in the display panel, and another part of the data line lead-out line 38 is set in the same layer and the same layer as the second plate of the capacitor structure in the display panel. Material settings.
  • the diameter of the functional via 300 located in the third bending area 23 along the third direction is equal to the diameter of the fourth direction.
  • the third direction includes the X direction
  • the fourth direction includes the Y direction.
  • D5 is equal to D6
  • D9 is equal to D12.
  • the third bending zone 23 is simultaneously bent in the first direction and the second direction, that is, is simultaneously subjected to bending stress in the first direction and the second direction.
  • the diameter of the functional via 300 located in the third bending area 23 along the third direction is equal to the diameter of the functional via 300 located in the third bending area 23 in the fourth direction.
  • the first direction and the second direction have the same stress release capability, that is, it can achieve good stress release in both the first direction and the second direction.
  • the portion of the functional film layer 30 located in the first bending area 21 includes a plurality of functional vias 300 arranged at intervals, located in the first bending area 21
  • the aperture D1 of the functional via 300 along the third direction is larger than the aperture D2 along the fourth direction.
  • D3 is greater than D4.
  • the third direction includes the X direction
  • the fourth direction includes the Y direction.
  • the first bending area 21 is bent in the first direction, and is mainly subjected to bending stress along the first direction.
  • the hole diameter along the third direction is larger than the hole diameter along the fourth direction, so that the functional via 300 located in the first bending area 21 has a greater ability to release bending stress in the first direction than in the first direction.
  • the ability of the second direction to release the bending stress can achieve good stress release in the first direction.
  • the above arrangement makes the functional via 300 located in the first bending area 21 have a small size while having a good stress relief capability, so that the functional via 300 is located in the first bending area.
  • the layout space of 21 is larger, and the layout number and layout position of the functional vias 300 are more selective in the first bending area 21.
  • the plurality of functional vias 300 located in the first bending area 21 includes a first via and a second via.
  • the first via The hole diameter of is different from the hole diameter of the second via.
  • FIG. 16 shows that the first bending area 21 (including the first bending body area 210 and the first bending transition area 211) includes a plurality of functional vias 300, and the plurality of functional vias 300 may It includes a first via hole and a second via hole.
  • the first via hole has an aperture D2
  • the second via hole has an aperture D4.
  • the above-mentioned multiple functional vias arranged in the first bending area 21 include the first via and the second via, so that by rationally arranging the first via and the second via, it is possible to achieve The functional film layer better releases the bending stress generated in the first bending zone 21.
  • the first bending zone 21 includes a first bending body zone 210, and a first bending zone 210 located between the first bending body zone 210 and the third bending zone 23.
  • a bending transition zone 211; along the direction in which the first bending body zone 210 points to the third bending zone 23, the functional via 300 located in the first bending transition zone 211 is along the fourth direction
  • the pore size gradually increases.
  • D4 is greater than D2, and D3 can be equal to D1.
  • the first bending transition area 211 includes at least two rows of functional vias 300, the at least two rows of functional vias 300 are arranged along the fourth direction, and each row of functional vias 300 includes A plurality of functional vias 300 are arranged at intervals in sequence.
  • the first bending area 21 includes the first bending body area 210 and the first bending transition area 211, and the first bending transition area 211 is located between the first bending body area 210 and the first bending transition area 211.
  • the first bending transition area 211 receives greater stress in the second direction.
  • the diameter of the functional via 300 located in the first bending transition area 211 along the fourth direction gradually increases. Larger, so that the closer the functional via 300 located in the first bending transition zone 211 is to the third bending zone 23, the stronger its ability to release the bending stress in the second direction, which is more conducive to lifting The reliability of the functional film layer 30.
  • the portion of the second bending area 22 of the functional film layer 30 includes a plurality of functional vias 300 arranged at intervals, located in the second bending area 22
  • the aperture D7 of the functional via 300 along the fourth direction is larger than the aperture D10 along the third direction.
  • the second bending area 22 is bent in the second direction, and is mainly subjected to bending stress in the second direction.
  • the aperture along the fourth direction is larger than the aperture along the third direction, so that the functional via 300 located in the second bending area 22 has a greater ability to release bending stress in the second direction than in the second direction.
  • the ability to release bending stress in the first direction can achieve good stress release in the second direction.
  • the above arrangement makes the functional via 300 located in the second bending area 22 have a small size while having good stress relief capabilities, so that the functional via 300 is located in the second bending area.
  • the layout space of 22 is larger, and the layout number and layout position of the functional vias 300 are more selective in the second bending area 22.
  • the multiple functional vias located in the second bending area 22 include a third via and a fourth via.
  • the third via The aperture is different from the aperture of the fourth via.
  • FIG. 18 shows that the second bending area 22 (including the second bending body area 220 and the second bending transition area 221) includes a plurality of functional vias 300, and the plurality of functional vias 300 may It includes a third via hole and a fourth via hole.
  • the third via hole has a hole diameter D10
  • the fourth via hole has a hole diameter D11.
  • the above-mentioned multiple functional vias arranged in the second bending area 22 include the third via and the fourth via, so that by rationally arranging the third via and the fourth via, it can be realized
  • the functional film layer better releases the bending stress generated in the second bending zone 22.
  • the second bending area 22 includes a second bending body area 220, and a first bending area located between the second bending body area 220 and the third bending area 23.
  • the pore size gradually increases.
  • D11 is greater than D10.
  • D8 in Figure 18 can be equal to D7.
  • the second bending transition area 221 includes at least two rows of functional vias 300, the at least two rows of functional vias 300 are arranged along a third direction, and each row of functional vias 300 includes A plurality of functional vias 300 are arranged at intervals in sequence.
  • the second bending zone 22 includes the second bending body zone 220 and the second bending transition zone 221.
  • the first bending transition zone 211 is located between the first bending body zone 210 and the second bending transition zone 221.
  • the second bending transition zone is opposite to In the second bending body area, the stress in the first direction is greater.
  • the diameter of the functional via 300 located in the second bending transition area 221 along the third direction gradually increases. Larger, so that the closer the functional via 300 located in the second bending transition zone 221 is to the third bending zone 23, the stronger its ability to release the bending stress in the first direction, which is more conducive to lifting The reliability of the functional film layer 30 in the first bending zone 21.
  • the portion of the functional film layer 30 located in the first bending area 21 includes a plurality of functional vias 300 arranged at intervals (as shown in FIGS. 11 and 12). ⁇ first conductive vias 340), along the direction of the first bending area 21 pointing to the third bending area 23, the distribution number of the functional vias 300 located in the first bending area 21 gradually Increase.
  • the portion of the first bending zone 21 closer to the third bending zone 23 is subjected to the greater bending stress in the second direction.
  • the area 21 points in the direction of the third bending area 23, and the distribution number of the functional vias 300 located in the first bending area 21 gradually increases, which is more conducive to raising the first bending area 21 close to the first bending area 21.
  • the stress-relieving ability of the third bending area 23 is beneficial to improve the reliability of the functional film layer 30.
  • the portion of the functional film layer 30 located in the second bending region 22 includes a plurality of functional vias 300 arranged at intervals (as shown in FIGS. 12 and 13 ⁇ first conductive via 340), along the direction of the second bending area 22 pointing to the third bending area 23, the distribution number of the functional vias 300 located in the second bending area 22 gradually Increase.
  • the stress-relieving ability of the part of the third bending zone 23 is beneficial to improve the reliability of the functional film layer 30 in the second bending zone 22.
  • the functional via 300 includes: vias formed on any film layer included in the functional film layer 30, for example: the first conductive via 340 formed on the first conductive pattern 34, The first inorganic via 350 formed on the first inorganic layer 35 and the second conductive via 360 formed on the second conductive pattern 36 are not limited thereto.
  • the specific distribution positions of the functional vias 300 can be set according to actual needs, and it is better to ensure that the boundary of the functional film layer 30 has a sufficient width.
  • the specific shape of the functional via 300 is various.
  • the functional via 300 includes a circular hole, a rectangular hole, a diamond-shaped hole, a hexagonal hole, or an octagonal hole.
  • the functional film layer 30 includes a positive power supply signal line film layer 31 or a negative power supply signal line film layer 32.
  • the functional film layer 30 includes a positive power signal line film layer 31 or a negative power signal line film layer 32.
  • the positive power signal line film The layer 31 is used to provide a positive power signal to the sub-pixels in the display panel, and the negative power signal line film layer 32 is used to provide a negative power signal to the sub-pixels in the display panel.
  • the functional film layer 30 may include a single-layer structure, for example, only the first conductive pattern 34 is included.
  • the functional film layer 30 may include a single-layer structure or a multi-layer structure, for example: only the first conductive pattern 34; or include the first conductive pattern 34; A conductive pattern 34 and a second conductive pattern 36; or including the first conductive pattern 34, the second conductive pattern 36 and the third conductive pattern.
  • the functional film layer 30 includes a positive power supply signal line film layer 31 and a negative power supply signal line film layer 32; the display panel further includes a gate drive circuit 33, the The orthographic projection of the gate drive circuit 33 on the substrate 10, the orthographic projection of the positive power signal line film layer on the substrate 10, and the negative power signal line film layer 32 on the substrate 10 Between the orthographic projections.
  • the display panel further includes the gate drive circuit 33, and the gate drive circuit 33 includes a plurality of shift register units.
  • the gate line provides a gate drive signal.
  • the functional film layer 30 includes a positive power supply signal line film layer 31 and a negative power supply signal line film layer 32
  • the positive power supply signal line film layer 31, the negative power supply signal line film layer 32, and the gate driver The specific layout positions of the circuit 33 are various.
  • the orthographic projection of the gate drive circuit 33 on the substrate 10 is set, and the orthographic projection of the power signal line film layer on the substrate 10 is arranged.
  • the gate drive circuit 33 separates the positive power source signal line film layer 31 and the negative power source signal line film layer 32 This prevents large-area conductive patterns from forming parasitic capacitances too close to each other, thereby effectively improving the working stability of the display panel.
  • the first bending area 21 includes a first partial display area 213 and a first partial peripheral wiring area 212; and/or, the second bending area 22 includes The second part of the display area 223 and the second part of the peripheral wiring area 222.
  • first partial display area 213 and the second partial display area 223 can be bent to the side surface of the display panel and display on the side surface of the display panel.
  • the area of the first partial display area 213 and the area of the second partial display area 223 can be set according to actual needs.
  • the area of the first partial display area 213 and the area of the second partial display area 223 The area can be set to be greater than 0 or equal to 0.
  • the above arrangement enables the display area of the display panel to be slightly bent in the first bending area 21 and the second bending area 22, thereby realizing the side display function of the display panel.
  • the third bending zone 23 is a transition zone from the first bending zone 21 to the second bending zone 22.
  • the third bending zone 23 is located between the first bending zone 21 and the second bending zone 22, can be bent in the first direction and the second direction at the same time, and is subjected to mixed stress.
  • the portion of the functional film layer located in the third bending zone 23 is subjected to bending stress in the first direction and bending stress in the second direction. Therefore, the functional film layer may be located in the third bending area.
  • the part of the folding area 23 is designed with holes to better release the mixed stress of the functional film layer in this area.
  • FIG. 2 shows a flattened area 29, and the flattened area 29 does not bend in any direction.
  • the flattening area 29 may optionally be a non-display area for laying out signal lines.
  • the third bending area 23 may not overlap with the display area.
  • the third bending area 23 can be set to include both a display area and a peripheral wiring area according to actual needs; or it can be set to include only the peripheral wiring area, that is, the third bending area 23 and the display area are different from each other. overlapping.
  • the display area is not located in the third bending area 23, which prevents the display area 23 from being subjected to mixed stress, thereby effectively improving the trust of the display panel sex.
  • the display panel further includes a cofferdam.
  • the cofferdam includes a first portion 71 in the first bending area 21 and a second portion 72 in the second bending area 22.
  • the cofferdam further includes a third portion 73 located in the third bending area 23.
  • the display panel further includes a cofferdam.
  • the cofferdam can block the organic encapsulation layer to prevent the organic encapsulation layer from extending to the boundary of the display panel.
  • the cofferdam is located in at least one area of the first bending area 21, the second bending area 22 and the third bending area 23.
  • the cofferdam has a ring-shaped structure, and the ring-shaped structure may specifically include a first ring-shaped part and a second ring-shaped part that are nested, the first ring-shaped part and the second ring-shaped part The parts can surround the display area 24 of the display panel.
  • the embodiments of the present disclosure also provide a display device, including the display panel provided in the above-mentioned embodiments.
  • the portion of the functional film layer 30 located in the third bending area 23 includes a plurality of functional vias 300 arranged at intervals, so that the functional film layer 30 can be better.
  • the reliability of the functional film layer 30 in the double bending area (that is, the third bending area 23) is better improved, thereby facilitating the achievement of the special topography of the display panel and the improvement of reliability. Therefore, when the display device provided by the embodiment of the present disclosure includes the display panel provided by the above-mentioned embodiment, it also has the above-mentioned beneficial effects, which will not be repeated here.
  • the display device may be any product or component with a display function, such as a TV, a monitor, a digital photo frame, a mobile phone, a tablet computer, and the like.
  • the embodiment of the present disclosure also provides a manufacturing method of the display panel, which is used to manufacture the display panel provided in the above-mentioned embodiment.
  • the display panel includes a first bending area 21 that can be bent in a first direction, a second bending area 22 that can be bent in a second direction, and a first bending area located between the first bending area 21 and the second bending area. In the third bending area 23 between the bending areas 22, the first direction intersects the second direction.
  • the manufacturing method includes: manufacturing a functional film layer 30 on the substrate 10, the functional film layer including a non-hollowed area, the non-hollowed area is located in the first bending area 21 and the second bending area 22
  • the portion of the functional film layer 30 located in the third bending area 23 includes a plurality of functional vias 300 arranged at intervals.
  • the substrate may optionally be a flexible substrate.
  • the substrate includes a polyimide (PI) substrate.
  • PI polyimide
  • the first direction includes the direction of bending left and right with the Y direction as the axis of rotation
  • the second direction includes the direction of bending up and down with the X direction as the axis of rotation
  • the first bending area 21 may specifically include a left frame area and a right frame area of the display panel
  • the second bending area 22 is bent up and down along the second direction
  • the second bending area 22 may specifically include an upper frame area and a lower frame area of the display panel
  • the third bending area 23 is simultaneously bent along the first direction and the second direction
  • the The third bending area 23 may specifically include four corner areas of the display panel, namely, an upper left corner area, a lower left corner area, an upper right corner area, and a lower right corner area.
  • the display panel includes a functional film layer 30, and the functional film layer 30 may specifically include a conductive pattern and/or an inorganic insulating film layer, but is not limited thereto.
  • the functional film layer includes a non-hollowed area located in at least one of the first bending area 21 and the second bending area 22; the functional film layer includes The hollow area is located in at least one of the first bending area 21 and the second bending area 22; the part of the functional film layer 30 located in the third bending area 23 can be It includes a plurality of functional vias 300 arranged at intervals, and the plurality of functional vias 300 form a hollow area in the third bending area 23.
  • the part of the functional film layer 30 located in the third bending area 23 includes a plurality of functional vias 300 arranged at intervals, so that the functional film
  • the layer 30 can better release the stress generated in the third bending zone 23, thereby effectively reducing the probability of cracks and transmission cracks in the functional film layer 30 in the third bending zone 23; therefore,
  • the display panel manufactured by the manufacturing method provided by the embodiment of the present disclosure better enhances the reliability of the functional film layer 30 in the double bending area (that is, the third bending area 23), thereby facilitating the achievement and reliability of the special topography of the display panel. The improvement.

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Abstract

一种显示面板及其制作方法、显示装置，所述显示面板包括：基底和设置在基底上的功能膜层（30），还包括：能够沿第一方向弯折的第一弯折区（21），能够沿第二方向弯折的第二弯折区（22），以及位于第一弯折区（21）和第二弯折区（22）之间的第三弯折区（23），第一方向与第二方向相交；功能膜层（30）包括非镂空区，非镂空区位于第一弯折区（21）和第二弯折区（22）中的至少一个区域中；功能膜层（30）位于所述第三弯折区（23）的部分包括间隔设置的多个功能过孔（300）。

Description

显示面板及其制作方法、显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种显示面板及其制作方法、显示装置。
背景技术
有源矩阵有机发光二管(英文：Active-matrix organic light emitting diode，简称：AMOLED)显示器由于具有反应速度快、对比度高、视角广等特性，已经逐步取代传统的液晶显示器，被广泛应用于手机屏幕，电脑显示器，全彩电脑中。
为了实现全面屏显示，AMOLED的显示屏会在左边框、右边框、上边框和下边框处均进行弯曲设计，以实现无边框的显示效果。
发明内容
本公开的目的在于提供一种显示面板及其制作方法、显示装置。
本公开的第一方面提供一种显示面板，包括：基底和设置在所述基底上的功能膜层，还包括：能够沿第一方向弯折的第一弯折区，能够沿第二方向弯折的第二弯折区，以及位于所述第一弯折区和所述第二弯折区之间的第三弯折区，所述第一方向与所述第二方向相交；
所述功能膜层包括非镂空区，所述非镂空区位于所述第一弯折区和所述第二弯折区中的至少一个区域中；所述功能膜层位于所述第三弯折区的部分包括间隔设置的多个功能过孔。
可选的，所述功能膜层包括第一导电图形，所述第一导电图形包括多个第一导电过孔，所述多个第一导电过孔位于所述第一弯折区、所述第二弯折区和所述第三弯折区中的至少一个区域中。
可选的，所述功能膜层还包括：与所述第一导电图形层叠设置的第一无机层，所述第一无机层包括多个第一无机过孔，所述多个第一无机过孔位于 所述第一弯折区、所述第二弯折区和所述第三弯折区中的至少一个区域中；所述第一无机过孔在所述基底上的正投影，与所述第一导电过孔在所述基底上的正投影不交叠。
可选的，所述功能膜层还包括：第一有机层和第二导电图形，所述第一有机层位于所述第一导电图形与所述第二导电图形之间；所述第二导电图形包括多个第二导电过孔，所述多个第二导电过孔位于所述第一弯折区、所述第二弯折区和所述第三弯折区中的至少一个区域中；所述第一导电过孔在所述基底上的正投影，与所述第二导电过孔在所述基底上的正投影不交叠。
可选的，所述第一导电图形在所述基底上的正投影与所述第二导电图形在所述基底上的正投影具有第一交叠区域，所述第一导电图形与所述第二导电图形在所述第一交叠区域耦接，所述第一交叠区域在所述基底上的正投影与所述第三弯折区在所述基底上的正投影不交叠。
可选的，沿垂直于所述第一导电图形的延伸方向，所述第一导电图形在所述第三弯折区的宽度大于其在所述第一弯折区的宽度，以及其在第二弯折区的宽度。
可选的，所述显示面板还包括进线区，沿靠近所述进线区的方向，所述第一导电图形沿所述第一方向上的宽度逐渐增加。
可选的，所述显示面板还包括：数据线引出线；所述数据线引出线在所述基底上的正投影与所述功能膜层在所述基底上的正投影具有第二交叠区域，所述第二交叠区域位于所述第一弯折区、所述第二弯折区和所述第三弯折区中的至少一个区域中。
可选的，所述显示面板中还包括晶体管结构，所述晶体管结构的源极和漏极与所述第一导电图形同层设置。
可选的，位于所述第三弯折区的功能过孔沿第三方向的孔径等于沿第四方向的孔径。
可选的，所述功能膜层位于所述第一弯折区的部分包括间隔设置的多个功能过孔，位于所述第一弯折区的功能过孔沿第三方向的孔径大于沿第四方向的孔径。
可选的，所述多个功能过孔包括第一过孔和第二过孔，沿所述第四方向，所述第一过孔的孔径与所述第二过孔的孔径不同。
可选的，所述功能膜层位所述第二弯折区的部分包括间隔设置的多个功能过孔，位于所述第二弯折区的功能过孔沿第四方向的孔径大于沿第三方向的孔径。
可选的，所述多个功能过孔包括第三过孔和第四过孔，沿所述第三方向，所述第三过孔的孔径与所述第四过孔的孔径不同。
可选的，所述功能膜层位于所述第一弯折区的部分包括间隔设置的多个功能过孔，沿所述第一弯折区指向所述第三弯折区的方向，位于所述第一弯折区的所述功能过孔的分布数量逐渐增加。
可选的，所述功能膜层位于所述第二弯折区的部分包括间隔设置的多个功能过孔，沿所述第二弯折区指向所述第三弯折区的方向，位于所述第二弯折区的所述功能过孔的分布数量逐渐增加。
可选的，所述功能膜层包括正电源信号线膜层或负电源信号线膜层。
可选的，所述功能膜层包括正电源信号线膜层和负电源信号线膜层；
所述显示面板还包括：栅极驱动电路，所述栅极驱动电路在所述基底上的正投影，位于所述正电源信号线膜层在所述基底上的正投影，与所述负电源信号线膜层在所述基底上的正投影之间。
可选的，所述第一弯折区包括第一部分显示区和第一部分周边走线区；和/或，所述第二弯折区包括第二部分显示区和第二部分周边走线区。
可选的，所述第三弯折区为第一弯折区至第二弯折区的过渡区域。
可选的，所述第三弯折区与显示区不重叠。
可选的，所述显示面板还包括围堰，所述围堰包括位于第一弯折区的第一部分和第二弯折区的第二部分。
可选的，所述围堰还包括位于第三弯折区的第三部分。
基于上述显示面板的技术方案，本公开的第二方面提供一种显示装置，包括上述显示面板。
基于上述显示面板的技术方案，本公开的第三方面提供一种显示面板的 制作方法，所述显示面板包括能够沿第一方向弯折的第一弯折区，能够沿第二方向弯折的第二弯折区，以及位于所述第一弯折区和所述第二弯折区之间的第三弯折区，所述第一方向与所述第二方向相交；
所述制作方法包括：
在基底上制作功能膜层，所述功能膜层包括非镂空区，所述非镂空区位于所述第一弯折区和所述第二弯折区中的至少一个区域中；所述功能膜层位于所述第三弯折区的部分包括间隔设置的多个功能过孔。
附图说明
此处所说明的附图用来提供对本公开的进一步理解，构成本公开的一部分，本公开的示意性实施例及其说明用于解释本公开，并不构成对本公开的不当限定。在附图中：
图1a为本公开实施例提供的显示面板的第一结构示意图；
图1b为图1b中A部分的放大示意图；
图2为本公开实施例提供的显示面板的第二结构示意图；
图3为本公开实施例提供的显示面板的第三结构示意图；
图4为本公开实施例提供的功能膜层在第三弯折区设置功能过孔的示意图；
图5为本公开实施例提供的第一导电图形在第三弯折区设置第一导电过孔的示意图；
图6为本公开实施例提供的第一导电图形与第一无机层层叠结构示意图；
图7为图6中沿B1B2方向的截面示意图；
图8为本公开实施例提供的第一导电图形与第二导电图形层叠结构示意图；
图9为图8中沿C1C2方向的截面示意图；
图10为本公开实施例提供的显示面板中部分显示区截面示意图；
图11为本公开实施例提供的位于显示面板左边框处第一弯折区的第一导电图形的示意图；
图12为本公开实施例提供的位于显示面板左下角处第三弯折区的第一导电图形的示意图；
图13为本公开实施例提供的位于显示面板下边框处第二弯折区的第一导电图形的示意图；
图14为本公开实施例提供的在第三弯折区功能膜层与数据线引出线交叠示意图；
图15为本公开实施例提供的位于第一弯折区的功能过孔的示意图；
图16为本公开实施例提供的位于第一弯折过渡区的功能过孔的示意图；
图17为本公开实施例提供的位于第二弯折区的功能过孔的示意图；
图18为本公开实施例提供的位于第二弯折过渡区的功能过孔的示意图；
图19为本公开实施例提供的正电源信号线膜层和负电源信号线膜层的布局示意图。
具体实施方式
为了进一步说明本公开实施例提供的显示面板及其制作方法、显示装置，下面结合说明书附图进行详细描述。
为了实现全面屏显示，AMOLED的显示屏会在左边框、右边框、上边框和下边框处均进行弯曲设计，以实现无边框的显示效果。而当屏幕的左边框、右边框、上边框和下边框均进行弯曲设计时，会产生弯折的交接区，即上下弯折和左右弯折的相交区域，此区域需要承受上下和左右两方面的弯折，是屏幕中功能膜层产生裂纹的高风险区。
如图1a所示，本公开提供一种显示面板，该显示面板的长边能够沿第一方向进行左右弯折，形成第一弯折区21，显示面板的短边能够沿第二方向进行上下弯折，形成第二弯折区22，在所述显示面板的四个拐角位置形成第三 弯折区23，所述第三弯折区23能够同时沿所述第一方向和所述第二方向进行双弯折，因此该第三弯折区会存在较大的应力褶皱。
如图1b和图3所示，所述显示面板的部分显示区24和部分边框区均进入所述第三弯折区23，由于所述显示区24中设置的功能图形大都面积较小，因此进入所述第三弯折区的显示区部分一般不会产生应力褶皱问题。所述部分边框区中包括扇出区28，正电源信号线膜层31布局的区域，栅极驱动电路33布局的区域，负电源信号线膜层32布局的区域和切割区域，这些区域中除了所述切割区外均有金属图形，且所述正电源信号线膜层31，以及所述负电源信号线膜层32均为宽度大约在0.2mm～0.4mm之间(可包括端点值)的大面积金属层，该大面积的金属层在双折状态下容易产生裂纹，从而影响显示屏特性。而且，所述第三弯折区还设置有无机层，所述无机层的柔韧性较差，在双弯折状态下，同样容易产生裂纹，影响显示屏特性。
需要说明，图1b中示出了显示区边界240，物理边界25，第一边界线271，第二边界线272。
因此，需要对位于所述第三弯折区23的各功能图形进行特殊设计，以提升显示产品特性。
请参阅图1a～图4所示，本公开实施例提供了一种显示面板，包括：基底和设置在所述基底上的功能膜层30，还包括：能够沿第一方向弯折的第一弯折区21，能够沿第二方向弯折的第二弯折区22，以及位于所述第一弯折区21和所述第二弯折区22之间的第三弯折区23，所述第一方向与所述第二方向相交；所述功能膜层30包括非镂空区，所述非镂空区位于所述第一弯折区21和所述第二弯折区22中的至少一个区域中；所述功能膜层30位于所述第三弯折区23的部分包括间隔设置的多个功能过孔300。
具体地，所述基底可选为柔性基底，示例性的，所述基底包括聚酰亚胺(PI)基底。
示例性的，所述第一方向包括以Y方向为转轴进行左右弯折的方向，所述第二方向包括以X方向为转轴进行上下弯折的方向；所述第一弯折区21沿所述第一方向左右弯折，所述第一弯折区21可具体包括所述显示面板的左 边框区和右边框区；所述第二弯折区22沿所述第二方向上下弯折，所述第二弯折区22可具体包括所述显示面板的上边框区和下边框区；所述第三弯折区23同时沿所述第一方向和所述第二方向弯折，所述第三弯折区23形成为混合受力区域，所述第三弯折区23可具体包括所述显示面板的四个拐角区，即左上拐角区、左下拐角区、右上拐角区和右下拐角区。
所述显示面板包括功能膜层30，所述功能膜层30可具体包括导电图形和/或无机绝缘膜层，但不仅限于此。
示例性的，所述功能膜层30包括非镂空区，所述非镂空区位于所述第一弯折区21和所述第二弯折区22中的至少一个区域中；所述功能膜层30包括镂空区，所述镂空区位于所述第一弯折区21和所述第二弯折区22中的至少一个区域中；所述功能膜层30位于所述第三弯折区23的部分可包括间隔设置的多个功能过孔300，所述多个功能过孔300在所述第三弯折区23形成镂空区。
如图19所示，以所述功能膜层30包括正电源信号线膜层31和负电源信号线膜层32为例，所述正电源信号线膜层31包括第一镂空区310和第一非镂空区311，所述负电源信号线膜层32包括第二镂空区320和第二非镂空区321。
本公开实施例提供的显示面板中，通过设置所述功能膜层30位于所述第三弯折区23的部分包括间隔设置的多个功能过孔300，使得所述功能膜层30能够更好的释放在所述第三弯折区23产生的应力，从而有效降低了在所述第三弯折区23所述功能膜层30产生裂纹和传输裂纹的概率；因此，本公开实施例提供的显示面板更好的提升了双弯折区(即第三弯折区23)功能膜层30的信赖性，从而利于显示面板的特殊形貌达成和信赖性的提高。
如图5所示，在一些实施例中，所述功能膜层30包括第一导电图形34，所述第一导电图形34包括多个第一导电过孔340，所述多个第一导电过孔340位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的至少一个区域中。
具体地，所述功能膜层30的具体结构多种多样，示例性的，所述功能膜 层30包括第一导电图形34，所述第一导电图形34包括位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的一个或多个区域中的多个第一导电过孔340。
上述通过设置所述第一导电图形34包括所述多个第一导电过孔340，使得所述第一导电图形34在所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的一个或多个区域中，均能够很好的释放由于弯折而产生的应力，从而有效降低了所述第一导电图形34在所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的一个或多个区域中产生裂纹和传输裂纹的概率。
如图6和图7所示，在一些实施例中，所述功能膜层30还包括：与所述第一导电图形34层叠设置的第一无机层35，所述第一无机层35包括多个第一无机过孔350，所述多个第一无机过孔350位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的至少一个区域中；所述第一无机过孔350在所述基底上的正投影，与所述第一导电过孔340在所述基底上的正投影不交叠。
具体地，所述功能膜层30可具体包括层叠设置的第一导电图形34和第一无机层35，示例性的，所述第一导电图形34位于所述基底与所述第一无机层35之间；或者，所述第一无机层35位于所述基底与所述第一导电图形34之间。
所述第一无机层35包括位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的一个或多个区域中的多个第一无机过孔350，这种结构的第一无机层35能够很好的释放由于弯折而产生的应力，从而有效降低了所述第一无机层35在所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的一个或多个区域中产生裂纹和传输裂纹的概率。
上述设置所述第一无机过孔350在所述基底上的正投影，与所述第一导电过孔340在所述基底上的正投影不交叠，具体包括：在所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的一个或多个区域中，所述第一无机过孔350在所述基底上的正投影，与所述第一导电过孔340在所述基底 上的正投影不交叠。
通过设置所述第一无机过孔350在所述基底上的正投影，与所述第一导电过孔340在所述基底上的正投影不交叠，使得在垂于所述基底的方向上，所述第一导电过孔340与所述第一无机过孔350错开排布，这种分布方式使得所述功能膜层30上包括的功能过孔300(即第一无机过孔350和第一导电过孔340)能够均匀分布，从而更有利于所述功能膜层30释放由于弯折产生的应力。
而且，当所述第一导电图形34采用金属材料制作时，由于金属材料与制作无机层的无机材料晶格尺寸不同，使得所述第一导电图形34与所述第一无机层35接触的界面存在界面空隙，应力在第一无机层35中传播时，能够在第一无机层35和所述第一导电图形34之间的交界面得到很好的释放。
如图8和图9所示，在一些实施例中，所述功能膜层30还包括：第一有机层37和第二导电图形36，所述第一有机层37位于所述第一导电图形34与所述第二导电图形36之间；所述第二导电图形36包括多个第二导电过孔360，所述多个第二导电过孔360位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23域中的至少一个区域中；所述第一导电过孔340在所述基底上的正投影，与所述第二导电过孔360在所述基底上的正投影不交叠。
具体地，所述功能膜层30包括相对设置的第一导电图形34和第二导电图形36，以及位于所述第一导电图形34与所述第二导电图形36之间的第一有机层37。
所述第二导电图形36包括位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的一个或多个区域中的多个第二导电过孔360，这种结构的第二导电图形能够很好的释放由于弯折而产生的应力，从而有效降低了所述二导电图形36在所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的一个或多个区域中产生裂纹和传输裂纹的概率。
上述设置所述第一导电过孔340在所述基底上的正投影，与所述第二导电过孔360在所述基底上的正投影不交叠，具体包括：在所述第一弯折区21、 所述第二弯折区22和所述第三弯折区23中的一个或多个区域中，所述第一导电过孔340在所述基底上的正投影，与所述第二导电过孔360在所述基底上的正投影不交叠。
通过设置所述第一导电过孔340在所述基底上的正投影，与所述第二导电过孔360在所述基底上的正投影不交叠，使得在垂于所述基底的方向上，所述第一导电过孔340与所述第二导电过孔360错开排布，这种分布方式使得所述功能膜层30上包括的功能过孔300(第一导电过孔和第二导电过孔)能够均匀分布，从而更有利于所述功能膜层30释放由于弯折产生的应力。
需要说明，由于所述第一有机层37一般具有较好的柔韧性，因此，一般不会在所述第一有机层37上形成过孔。
所述第一导电图形34和所述第二导电图形36的具体结构和布局方式多种多样，下面对所述第一导电图形34和所述第二导电图形36的具体结构和布局方式示例性说明。
如图10所示，在一些实施例中，所述显示面板还包括：
多个子像素驱动电路，每个所述子像素驱动电路均包括电容结构和多个晶体管结构TFT。该多个晶体管结构TFT包括至少一个具有驱动功能的驱动晶体管，以及多个具有开关功能的开关晶体管，工作时，所述多个晶体管结构TFT配合工作，从所述驱动晶体管的输出端输出驱动信号。每个所述晶体管结构TFT均包括有源层、栅极、源极和漏极。所述电容结构包括相对设置的第一极板1081和第二极板1082，所述电容结构可作为所述子像素驱动电路中的存储电容。
设置在所述多个子像素驱动电路背向所述基底10的一侧的阳极图形101，所述阳极图形101与所述子像素驱动电路一一对应。
设置在所述阳极图形101背向所述基底10的一侧的多个发光元件，所述多个发光元件与所述多个子像素驱动电路一一对应，每个所述发光元件可包括层叠设置的有机发光材料层105和阴极106，所述有机发光材料层105位于对应的所述阳极图形101和所述阴极106之间。需要说明，所述有机发光材料层105可包括层叠设置的电子注入层、电子传输层、发光层、空穴传输 层和空穴注入层，但不仅限于此。
设置在所述阳极图形101与所述子像素驱动电路之间的多个导电连接部102，每个所述导电连接部102分别与对应的所述阳极图形101和对应的所述子像素驱动电路耦接。更详细地说，所述驱动晶体管包括同层同材料设置的源极和漏极，该源极和漏极的其中一个作为所述驱动晶体管的输入电极，该源极和漏极的另外一个作为所述驱动晶体管的输出电极，所述导电连接部102与所述驱动晶体管的输出电极耦接。需要说明，图10中的晶体管TFT可作为所述驱动晶体管，也可作为连接在所述驱动晶体管的输出电极与所述阳极图形101之间的开关晶体管。
第二绝缘层103和第三绝缘层104；所述晶体管结构TFT中的源极和漏极均位于所述第二绝缘层103背向所述基底10的表面；所述导电连接部102位于所述第三绝缘层104背向所述基底10的表面。
值得注意，如图10所示，显示面板中还包括：缓冲层107、第一平坦层PLN1、第二平坦层PLN2和像素界定层PDL；还包括封装结构，所述封装结构包括沿远离所述基底10的方向依次层叠设置的第一无机封装层1091、有机封装层1092和第二无机封装层1093。
另外，需要说明，所述显示面板中包括的导电连接部102和第二平坦层PLN2均为可选结构。
在所述显示面板工作时，每个子像素驱动电路将产生的驱动信号，经过对应的所述导电连接部102传输至对应的阳极图形101，在所述阳极图形102和所述阴极106的共同控制下，使所述有机发光材料层105发光，从而实现所述显示基板的显示功能。
当所述显示面板采用上述具体结构时，所述第一导电图形34和所述第二导电图形36均可以与所述显示面板中的一些功能结构在同一次构图工艺中制作。
示例性的，所述第一导电图形34与所述晶体管结构TFT的栅极采用相同的材料制作，且均形成在显示面板中的第一栅极绝缘层背向所述基底10的表面，即将所述第一导电图形34与所述晶体管结构TFT的栅极同层同材料 设置；所述第二导电图形36与所述晶体管结构TFT的源极和漏极采用相同的材料制作，且均形成在显示面板中的第二绝缘层103背向所述基底10的表面，即将所述第一导电图形34与所述晶体管结构TFT的源极和漏极同层同材料设置。
示例性的，所述第一导电图形34与所述电容结构的第二极板1082采用相同的材料制作，且均形成在显示面板中的第二栅极绝缘层背向所述基底10的表面，即将所述第一导电图形34与所述电容结构的第二极板1082同层同材料设置；所述第二导电图形36与所述晶体管结构TFT的源极和漏极采用相同的材料制作，且均形成在显示面板中的第二绝缘层103背向所述基底10的表面，即将所述第二导电图形36与所述晶体管结构TFT的源极和漏极同层同材料设置。
示例性的，所述第一导电图形34与所述晶体管结构TFT的源极和漏极采用相同的材料制作，且均形成在显示面板中的第二绝缘层103背向所述基底10的表面，即将所述第一导电图形34与所述晶体管结构TFT的源极和漏极同层同材料设置；所述第二导电图形36与所述导电连接部102采用相同的材料制作，且均形成在第三绝缘层104背向所述基底10的表面，即将所述第二导电图形36与所述导电连接部102同层同材料设置。
示例性的，所述功能膜层30包括所述第一导电图形34、所述第二导电图形36和第三导电图形；所述第一导电图形34与所述晶体管结构TFT的栅极采用相同的材料制作，且均形成在显示面板中的第一栅极绝缘层背向所述基底10的表面，即将所述第一导电图形34与所述晶体管结构TFT的栅极同层同材料设置；所述第二导电图形36与所述电容结构的第二极板1082采用相同的材料制作，且均形成在显示面板中的第二栅极绝缘层背向所述基底10的表面，即将所述第二导电图形36与所述电容结构的第二极板1082同层同材料设置；所述第三导电图形与所述晶体管结构TFT的源极和漏极采用相同的材料制作，且均形成在显示面板中的第二绝缘层103背向所述基底10的表面，即将所述第三导电图形与所述晶体管结构TFT的源极和漏极同层同材料设置。
需要说明，上述“同层”指的是采用同一成膜工艺制作用于形成特定图形的膜层，然后利用同一掩模板通过一次构图工艺形成的层结构。根据特定图形的不同，一次构图工艺可能包括多次曝光、显影或刻蚀工艺，而形成的层结构中的特定图形可以是连续的也可以是不连续的，这些特定图形还可能处于不同的高度或者具有不同的厚度。
上述实施例中，将所述第一导电图形34、所述第二导电图形36和所述第三导电图形均与所述显示面板中包括的其它功能结构同层同材料设置，使得所述第一导电图形34、所述第二导电图形36和所述第三导电图形均能够与所述其它功能结构在同一次构图工艺中形成，避免为了制作所述第一导电图形34、所述第二导电图形36和所述第三导电图形而增加额外的构图工艺，从而有效简化了所述显示基板的制作工艺流程，降低了显示基板的制作成本。
在一些实施例中，所述第一导电图形34在所述基底10上的正投影与所述第二导电图形36在所述基底10上的正投影具有第一交叠区域，所述第一导电图形34与所述第二导电图形36在所述第一交叠区域耦接，所述第一交叠区域在所述基底10上的正投影与所述第三弯折区23在所述基底10上的正投影不交叠。
示例性的，所述第一导电图形34与所述第二导电图形36可共同形成为显示面板中的正电源信号线膜层31或负电源信号线膜层32，但不仅限于此。由于所述第一导电图形34与所述第二导电图形36在第一交叠区域耦接，能够有效减小所述第一导电图形34与所述第二导电图形36上的电阻，这样在将所述第一导电图形34与所述第二导电图形36作为正电源信号线膜层31或负电源信号线膜层32时，能更有效减小正电源信号线膜层31或负电源信号线膜层32的电阻。
另外，上述设置所述第一交叠区域在所述基底10上的正投影与所述第三弯折区23在所述基底10上的正投影不交叠，能够避免所述第一交叠区域承受双向的弯折应力，从而更好的保证了所述第一导电图形34与所述第二导电图形36之间的耦接性能。
如图11～图13所示，在一些实施例中，沿垂直于所述第一导电图形34 的延伸方向(如图11～图13中的F1方向)，所述第一导电图形34在所述第三弯折区23的宽度L2大于其在所述第一弯折区21的宽度L1，以及其在第二弯折区22的宽度L3。
具体地，所述第一导电图形34的具体形状多种多样，示例性的，可设置沿垂直于所述第一导电图形34的延伸方向，所述第一导电图形34在所述第三弯折区23的宽度大于其在所述第一弯折区21的宽度，以及其在第二弯折区22的宽度；由于所述第三弯折区23对应所述显示面板的拐角区，这种设置方式能够使得所述第一导电图形34在所述拐角区具有较大的面积，从而有利于所述第一导电图形34在拐角区对大电流的承受能力。
需要说明，所述第一导电图形34还包括延伸至显示区的341，该部分341用于与显示区中的功能图形电连接。示例性的，当所述第一导电图形34作为电源信号线时，用于为所述功能图形提供电源信号。
如图3、图11～图13所示，在一些实施例中，所述显示面板还包括进线区26，沿靠近所述进线区26的方向，所述第一导电图形34沿所述第一方向上的宽度逐渐增加。
具体地，所述显示面板包括进线区26，所述显示面板的驱动芯片用于通过所述进线区26将对应的信号传输至显示面板的内部。
上述沿靠近所述进线区26的方向，所述第一导电图形34沿所述第一方向上的宽度逐渐增加，如图11～图13所示，图中的L4、L5、L6逐渐变大。这种结构的所述第一导电图形34使得其在进线区26具有较大的面积，更有利于所述第一导电图形34在进线区26对大电流的承受能力。
如图14所示，在一些实施例中，所述显示面板还包括：数据线引出线38；所述数据线引出线38在所述基底10上的正投影与所述功能膜层30在所述基底10上的正投影具有第二交叠区域，所述第二交叠区域位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的至少一个区域中。
具体地，所述显示面板包括位于显示区24的数据线，以及位于非显示区24的数据线引出线38，所述数据线引出线38连接在所述数据线和所述显示面板的驱动芯片之间，用于将所述驱动芯片提供的数据信号传输至所述数据 线。
以AMOLED显示面板为例，AMOLED显示面板有诸多性能规格，其中数据信号线的RC(阻容)loading(负载)作为AMOLED显示面板的一种性能规格，对AMOLED显示面板的像素充电时间有着重要的影响，对显示面板的显示性能有很大影响。因此，控制数据信号线的loading对显示面板的显示效果至关重要。
与LCD利用稳定的电压控制亮度不同，OLED显示面板属于电流驱动，需要稳定的电流来控制发光，OLED显示面板通常采用的低温多晶硅(英文：Low Temperature Poly-silicon，简称：LTPS)制程，当在中、大尺寸的高分辨率显示面板使用该制程时，若控制显示面板的负载较小，则显示面板的尺寸会成倍增大，由于像素间距(Pitch)变小也会牺牲掉部分的存储电容(Cst)，这样会使显示性能大幅下降。
更详细地说，在中尺寸高分辨率的显示面板设计中，较小尺寸低分辨率的显示面板具有较大的RC loading，因此具有较大的电阻压降，这样在LTPS、OLED制程中会造成显示面板中正电源信号线膜层31和数据线等的IR drop(压降)较为严重，导致面板显示性能大幅下降。同时，在高分辨率面板中，像素尺寸越来越小，信号线的宽度受工艺条件限制较大，会牺牲部分的Cst来保证像素电路结构的排布，为减小电阻负载及增加Cst，就必须从增加Mask(即掩模)或更换材料等方法进行改变，这样会大大增加了工艺制程的步骤，提高产品成本。
上述实施例提供的显示面板中，由于所述第一导电图形34包括多个第一导电过孔340，所述多个第一导电过孔340位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的至少一个区域中；通过设置所述数据线引出线38在所述基底10上的正投影与所述功能膜层30在所述基底10上的正投影具有第二交叠区域，所述第二交叠区域位于所述第一弯折区21、所述第二弯折区22和所述第三弯折区23中的至少一个区域中，使得当所述第一导电图形34作为所述显示面板中的正电源信号线膜层31时，所述数据线引出线38与所述正电源信号线膜层31之间的交叠面积能够大大减小，从而 达降低与所述数据线引出线38连接的数据线的loading的目的，从而使得所述显示面板实现更好的显示效果。
需要说明，由于所述数据线引线的数量较多，为了降低工艺难度，一般会将数据线引出线38分为两部分，将两部分分别布局在显示面板中不同的膜层，示例性的，将一部分数据线引出线38与所述显示面板中的晶体管结构TFT的栅极同层同材料设置，将另一部分数据线引出线38与所述显示面板中电容结构的第二极板同层同材料设置。
如图16和图18所示，在一些实施例中，位于所述第三弯折区23的功能过孔300沿第三方向的孔径等于沿第四方向的孔径。
示例性的，所述第三方向包括所述X方向，所述第四方向包括所述Y方向。如图16所示，D5等于D6。如图18所示，D9等于D12。
具体地，所述第三弯折区23同时向所述第一方向与所述第二方向弯折，即同时受到沿所述第一方向和所述第二方向的弯折应力，上述通过设置位于所述第三弯折区23的功能过孔300沿所述第三方向的孔径等于沿所述第四方向的孔径，使得位于所述第三弯折区23的功能过孔300在所述第一方向与所述第二方向具有相同的应力释放能力，即能够实现在所述第一方向和所述第二方向均能够很好的释放应力。
如图15所示，在一些实施例中，所述功能膜层30位于所述第一弯折区21的部分包括间隔设置的多个功能过孔300，位于所述第一弯折区21的功能过孔300沿第三方向的孔径D1大于沿第四方向的孔径D2。如图16所示，D3大于D4。
示例性的，所述第三方向包括所述X方向，所述第四方向包括所述Y方向。
具体地，所述第一弯折区21向所述第一方向弯折，主要受到沿所述第一方向的弯折应力，上述通过设置位于所述第一弯折区21的功能过孔300沿所述第三方向的孔径大于沿所述第四方向的孔径，使得位于所述第一弯折区21的功能过孔300在所述第一方向释放弯折应力的能力大于其在所述第二方向释放弯折应力的能力，能够实现在所述第一方向很好的释放应力。
上述设置方式使得位于所述第一弯折区21的功能过孔300在具有良好的应力释放能力的同时，具有较小的尺寸，从而使得所述功能过孔300在所述第一弯折区21的布局空间更大，在所述第一弯折区21对功能过孔300的布局数量和布局位置的选择性更多。
如图16所示，在一些实施例中，位于第一弯折区21的多个功能过孔300包括第一过孔和第二过孔，沿所述第四方向，所述第一过孔的孔径与所述第二过孔的孔径不同。
具体的，图16中示出了第一弯折区21(包括第一弯折本体区210和第一弯折过渡区211)中包括多个功能过孔300，该多个功能过孔300可包括第一过孔和第二过孔，示例性的，沿所述第四方向，第一过孔具有孔径D2，第二过孔具有孔径D4。
上述设置位于第一弯折区21的多个功能过孔包括所述第一过孔和所述第二过孔，使得通过对所述第一过孔和第二过孔合理的布局，能够实现功能膜层更好的释放在第一弯折区21产生的弯折应力。
如图16所示，进一步地，所述第一弯折区21包括第一弯折本体区210，以及位于所述第一弯折本体区210与所述第三弯折区23之间的第一弯折过渡区211；沿所述第一弯折本体区210指向所述第三弯折区23的方向，位于所述第一弯折过渡区211的功能过孔300沿所述第四方向的孔径逐渐增大。如图16中，D4大于D2，D3可以与D1相等。
示例性的，所述第一弯折过渡区211中包括至少两行功能过孔300，所述至少两行功能过孔300沿第四方向排列，每行功能过孔300均包括沿第三方向依次间隔设置的多个功能过孔300。
所述第一弯折区21包括所述第一弯折本体区210和所述第一弯折过渡区211，所述第一弯折过渡区211位于所述第一弯折本体区210与所述第三弯折区23之间，由于所述第一弯折过渡区211相对于所述第一弯折本体区210更靠近所述第三弯折区23，因此所述第一弯折过渡区211相对于所述第一弯折本体区210，受到的第二方向的应力更大。
上述通过设置沿所述第一弯折本体区210指向所述第三弯折区23的方 向，位于所述第一弯折过渡区211的功能过孔300沿所述第四方向的孔径逐渐增大，使得所述位于所述第一弯折过渡区211的功能过孔300越靠近所述第三弯折区23，其释放第二方向的弯折应力的能力越强，从而更有利于提升所述功能膜层30的信赖性。
如图17所示，在一些实施例中，所述功能膜层30位所述第二弯折区22的部分包括间隔设置的多个功能过孔300，位于所述第二弯折区22的功能过孔300沿所述第四方向的孔径D7大于沿所述第三方向的孔径D10。
具体地，所述第二弯折区22向所述第二方向弯折，主要受到沿所述第二方向的弯折应力，上述通过设置位于所述第二弯折区22的功能过孔300沿所述第四方向的孔径大于沿所述第三方向的孔径，使得位于所述第二弯折区22的功能过孔300在所述第二方向释放弯折应力的能力大于其在所述第一方向释放弯折应力的能力，能够实现在所述第二方向很好的释放应力。
上述设置方式使得位于所述第二弯折区22的功能过孔300在具有良好的应力释放能力的同时，具有较小的尺寸，从而使得所述功能过孔300在所述第二弯折区22的布局空间更大，在所述第二弯折区22对功能过孔300的布局数量和布局位置的选择性更多。
如图18所示，在一些实施例中，位于第二弯折区22的多个功能过孔包括第三过孔和第四过孔，沿所述第三方向，所述第三过孔的孔径与所述第四过孔的孔径不同。
具体的，图18中示出了第2弯折区22(包括第二弯折本体区220和第二弯折过渡区221)中包括多个功能过孔300，该多个功能过孔300可包括第三过孔和第四过孔，示例性的，沿所述第三方向，第三过孔具有孔径D10，第四过孔具有孔径D11。
上述设置位于第二弯折区22的多个功能过孔包括所述第三过孔和所述第四过孔，使得通过对所述第三过孔和第四过孔合理的布局，能够实现功能膜层更好的释放在第二弯折区22产生的弯折应力。
如图18所示，进一步地，所述第二弯折区22包括第二弯折本体区220，以及位于所述第二弯折本体区220与所述第三弯折区23之间的第二弯折过渡 区221；沿所述第二弯折本体区220指向所述第三弯折区23的方向，位于所述第二弯折过渡区221的功能过孔300沿所述第三方向的孔径逐渐增大。如图18中的D11大于D10。图18中D8可以与D7相等。
示例性的，所述第二弯折过渡区221中包括至少两列功能过孔300，所述至少两列功能过孔300沿第三方向排列，每列功能过孔300均包括沿第四方向依次间隔设置的多个功能过孔300。
所述第二弯折区22包括所述第二弯折本体区220和所述第二弯折过渡区221，所述第一弯折过渡区211位于所述第一弯折本体区210与所述第三弯折区23之间，由于所述第二弯折过渡区相对于所述第二弯折本体区更靠近所述第三弯折区23，因此所述第二弯折过渡区相对于所述第二弯折本体区，受到的第一方向的应力更大。
上述通过设置沿所述第二弯折本体区220指向所述第三弯折区23的方向，位于所述第二弯折过渡区221的功能过孔300沿所述第三方向的孔径逐渐增大，使得所述位于所述第二弯折过渡区221的功能过孔300越靠近所述第三弯折区23，其释放第一方向的弯折应力的能力越强，从而更有利于提升所述功能膜层30在所述第一弯折区21的信赖性。
如图11和图12所示，在一些实施例中，所述功能膜层30位于所述第一弯折区21的部分包括间隔设置的多个功能过孔300(如图11和图12中的第一导电过孔340)，沿所述第一弯折区21指向所述第三弯折区23的方向，位于所述第一弯折区21的所述功能过孔300的分布数量逐渐增加。
具体地，所述第一弯折区21中越靠近所述第三弯折区23的部分，受到的沿所述第二方向上的弯折应力越大，上述通过设置沿所述第一弯折区21指向所述第三弯折区23的方向，位于所述第一弯折区21的所述功能过孔300的分布数量逐渐增加，更有利于提升所述第一弯折区21靠近所述第三弯折区23的部分对应力的释放能力，有利于提升所述功能膜层30的信赖性。
如图12和图13所示，在一些实施例中，所述功能膜层30位于所述第二弯折区22的部分包括间隔设置的多个功能过孔300(如图12和图13中的第一导电过孔340)，沿所述第二弯折区22指向所述第三弯折区23的方向，位 于所述第二弯折区22的所述功能过孔300的分布数量逐渐增加。
具体地，所述第二弯折区22中越靠近所述第三弯折区23的部分，受到的沿所述第一方向上的弯折应力越大，上述通过设置沿所述第二弯折区22指向所述第三弯折区23的方向，位于所述第二弯折区22的所述功能过孔300的分布数量逐渐增加，更有利于提升所述第二弯折区22靠近所述第三弯折区23的部分对应力的释放能力，有利于提升所述功能膜层30在所述第二弯折区22的信赖性。
值得注意，所述功能过孔300包括：所述功能膜层30中包括的任意膜层上形成过孔，例如：所述第一导电图形34上形成的所述第一导电过孔340，所述第一无机层35上形成的所述第一无机过孔350，以及所述第二导电图形36上形成的所述第二导电过孔360，但不仅限于此。
另外，所述功能过孔300的具体分布位置可根据实际需要设置，最好保证所述功能膜层30的边界处具有足够的宽度。
此外，所述功能过孔300的具体形状多种多样，示例性的，所述功能过孔300包括圆形孔、矩形孔、菱形孔、六边形孔或八边形孔等。
在一些实施例中，所述功能膜层30包括正电源信号线膜层31或负电源信号线膜层32。
具体地，所述功能膜层30的具体类型多种多样，示例性的，所述功能膜层30包括正电源信号线膜层31或负电源信号线膜层32，所述正电源信号线膜层31用于为所述显示面板中的子像素提供正电源信号，所述负电源信号线膜层32用于为所述显示面板中的子像素提供负电源信号。
当所述功能膜层30为正电源信号线膜层31时，所述功能膜层30可包括单层结构，例如：仅包括所述第一导电图形34。
当所述功能膜层30为负电源信号线膜层32时，所述功能膜层30可包括单层结构或多层结构，例如：仅包括所述第一导电图形34；或者包括所述第一导电图形34和第二导电图形36；或者包括所述第一导电图形34、第二导电图形36和所述第三导电图形。
如图19所示，在一些实施例中，所述功能膜层30包括正电源信号线膜 层31和负电源信号线膜层32；所述显示面板还包括：栅极驱动电路33，所述栅极驱动电路33在所述基底10上的正投影，位于所述正电源信号线膜层在所述基底10上的正投影，与所述负电源信号线膜层32在所述基底10上的正投影之间。
具体地，所述显示面板还包括所述栅极驱动电路33，所述栅极驱动电路33包括多个移位寄存器单元，每个所述移位寄存器单元用于为所述显示面板中对应的栅线提供栅极驱动信号。
当所述功能膜层30包括正电源信号线膜层31和负电源信号线膜层32时，所述正电源信号线膜层31、所述负电源信号线膜层32和所述栅极驱动电路33的具体布局位置多种多样，示例性的，设置所述栅极驱动电路33在所述基底10上的正投影，位于所述电源信号线膜层在所述基底10上的正投影，与所述负电源信号线膜层32在所述基底10上的正投影之间，这样通过所述栅极驱动电路33将所述正电源信号线膜层31和负电源信号线膜层32间隔开，避免了大面积导电图形相距太近形成寄生电容，从而有效提升了所述显示面板的工作稳定性。
如图2所示，在一些实施例中，可设置所述第一弯折区21包括第一部分显示区213和第一部分周边走线区212；和/或，所述第二弯折区22包括第二部分显示区223和第二部分周边走线区222。
具体地，所述第一部分显示区213和所述第二部分显示区223能够弯折到显示面板的侧面，并在显示面板的侧面进行显示。所述第一部分显示区213的面积和所述第二部分显示区223的面积均可以根据实际需要设置，示例性的，所述第一部分显示区213的面积和所述第二部分显示区223的面积均可以设置为大于0或等于0。
上述设置方式使得所述显示面板的显示区域能够在所述第一弯折区21和所述第二弯折区22发生少量弯折，从而实现显示面板的侧面显示功能。
如图1b和图2所示，在一些实施例中，所述第三弯折区23为第一弯折区21至第二弯折区22的过渡区域。
具体地，所述第三弯折区23位于所述第一弯折区21与所述第二弯折区 22之间，能够同时沿第一方向和第二方向弯折，受到混合应力。
所述功能膜层位于所述第三弯折区23的部分受到沿第一方向的弯折应力和沿第二方向的弯折应力，因此，可以在所述功能膜层位于所述第三弯折区23的部分进行挖孔设计，以更好的释放功能膜层在该区域受到的混合应力。
值得注意，图2中示意了平整区29，该平整区29不发生任何方向的弯折。所述平整区29可选为非显示区，用于布局信号线。
如图2所示，在一些实施例中，可设置所述第三弯折区23与显示区不重叠。
具体地，所述第三弯折区23可根据实际需要设置为同时包括显示区和周边走线区；或者设置为仅包括周边走线区，即所述第三弯折区23与显示区不重叠。
当设置所述第三弯折区23与显示区不重叠时，使得所述显示区不位于第三弯折区23，避免了所述显示区23受到混合应力，从而有效提升了显示面板的信赖性。
如图3所示，在一些实施例中，所述显示面板还包括围堰，所述围堰包括位于第一弯折区21的第一部分71和第二弯折区22的第二部分72。
在一些实施例中，所述围堰还包括位于第三弯折区23的第三部分73。
具体的，所述显示面板还包括围堰，在对显示面板进行薄膜封装时，所述围堰能够对有机封装层进行阻挡，避免有机封装层延伸至显示面板的边界处。所述围堰的具体布局方式多种多样，示例性的，所述围堰位于所述第一弯折区21、第二弯折区22和第三弯折区23的至少一个区域中。示例性的，所述围堰呈环状结构，该环状结构可具体包括嵌套设置的第一环状部和第二环状部，所述第一环状部和所述第二环状部均能够包围显示面板的显示区24。
本公开实施例还提供了一种显示装置，包括上述实施例提供的显示面板。
由于上述实施例提供的显示面板中，通过设置所述功能膜层30位于所述第三弯折区23的部分包括间隔设置的多个功能过孔300，使得所述功能膜层30能够更好的释放在所述第三弯折区23产生的应力，从而有效降低了在所 述第三弯折区23所述功能膜层30产生裂纹和传输裂纹的概率；因此上述实施例提供的显示面板更好的提升了双弯折区(即第三弯折区23)功能膜层30的信赖性，从而利于显示面板的特殊形貌达成和信赖性的提高。因此，本公开实施例提供的显示装置在包括上述实施例提供的显示面板时，同样具有上述有益效果，此处不再赘述。
需要说明的是，所述显示装置可以为：电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件等。
本公开实施例还提供了一种显示面板的制作方法，用于制作上述实施例提供的显示面板。所述显示面板包括能够沿第一方向弯折的第一弯折区21，能够沿第二方向弯折的第二弯折区22，以及位于所述第一弯折区21和所述第二弯折区22之间的第三弯折区23，所述第一方向与所述第二方向相交。
所述制作方法包括：在基底10上制作功能膜层30，所述功能膜层包括非镂空区，所述非镂空区位于所述第一弯折区21和所述第二弯折区22中的至少一个区域中；所述功能膜层30位于所述第三弯折区23的部分包括间隔设置的多个功能过孔300。
具体地，所述基底可选为柔性基底，示例性的，所述基底包括聚酰亚胺(PI)基底。
示例性的，所述第一方向包括以Y方向为转轴进行左右弯折的方向，所述第二方向包括以X方向为转轴进行上下弯折的方向；所述第一弯折区21沿所述第一方向左右弯折，所述第一弯折区21可具体包括所述显示面板的左边框区和右边框区；所述第二弯折区22沿所述第二方向上下弯折，所述第二弯折区22可具体包括所述显示面板的上边框区和下边框区；所述第三弯折区23同时沿所述第一方向和所述第二方向弯折，所述第三弯折区23可具体包括所述显示面板的四个拐角区，即左上拐角区、左下拐角区、右上拐角区和右下拐角区。
所述显示面板包括功能膜层30，所述功能膜层30可具体包括导电图形和/或无机绝缘膜层，但不仅限于此。
示例性的，所述功能膜层包括非镂空区，所述非镂空区位于所述第一弯 折区21和所述第二弯折区22中的至少一个区域中；所述功能膜层包括镂空区，所述镂空区位于所述第一弯折区21和所述第二弯折区22中的至少一个区域中；所述功能膜层30位于所述第三弯折区23的部分可包括间隔设置的多个功能过孔300，所述多个功能过孔300在所述第三弯折区23形成镂空区。
采用本公开实施例提供的制作方法制作的显示面板中，通过设置所述功能膜层30位于所述第三弯折区23的部分包括间隔设置的多个功能过孔300，使得所述功能膜层30能够更好的释放在所述第三弯折区23产生的应力，从而有效降低了在所述第三弯折区23所述功能膜层30产生裂纹和传输裂纹的概率；因此，采用本公开实施例提供的制作方法制作的显示面板更好的提升了双弯折区(即第三弯折区23)功能膜层30的信赖性，从而利于显示面板的特殊形貌达成和信赖性的提高。
需要说明，本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于方法实施例而言，由于其基本相似于产品实施例，所以描述得比较简单，相关之处参见产品实施例的部分说明即可。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”、“耦接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何 的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (25)

  1. 一种显示面板，包括：基底和设置在所述基底上的功能膜层，还包括：能够沿第一方向弯折的第一弯折区，能够沿第二方向弯折的第二弯折区，以及位于所述第一弯折区和所述第二弯折区之间的第三弯折区，所述第一方向与所述第二方向相交；
    所述功能膜层包括非镂空区，所述非镂空区位于所述第一弯折区和所述第二弯折区中的至少一个区域中；所述功能膜层位于所述第三弯折区的部分包括间隔设置的多个功能过孔。
  2. 根据权利要求1所述的显示面板，其中，所述功能膜层包括第一导电图形，所述第一导电图形包括多个第一导电过孔，所述多个第一导电过孔位于所述第一弯折区、所述第二弯折区和所述第三弯折区中的至少一个区域中。
  3. 根据权利要求2所述的显示面板，其中，所述功能膜层还包括：与所述第一导电图形层叠设置的第一无机层，所述第一无机层包括多个第一无机过孔，所述多个第一无机过孔位于所述第一弯折区、所述第二弯折区和所述第三弯折区中的至少一个区域中；所述第一无机过孔在所述基底上的正投影，与所述第一导电过孔在所述基底上的正投影不交叠。
  4. 根据权利要求2所述的显示面板，其中，所述功能膜层还包括：第一有机层和第二导电图形，所述第一有机层位于所述第一导电图形与所述第二导电图形之间；所述第二导电图形包括多个第二导电过孔，所述多个第二导电过孔位于所述第一弯折区、所述第二弯折区和所述第三弯折区中的至少一个区域中；所述第一导电过孔在所述基底上的正投影，与所述第二导电过孔在所述基底上的正投影不交叠。
  5. 根据权利要求4所述的显示面板，其中，所述第一导电图形在所述基底上的正投影与所述第二导电图形在所述基底上的正投影具有第一交叠区域，所述第一导电图形与所述第二导电图形在所述第一交叠区域耦接，所述第一交叠区域在所述基底上的正投影与所述第三弯折区在所述基底上的正投影不交叠。
  6. 根据权利要求2所述的显示面板，其中，沿垂直于所述第一导电图形的延伸方向，所述第一导电图形在所述第三弯折区的宽度大于其在所述第一弯折区的宽度，以及其在第二弯折区的宽度。
  7. 根据权利要求2所述的显示面板，其中，所述显示面板还包括进线区，沿靠近所述进线区的方向，所述第一导电图形沿所述第一方向上的宽度逐渐增加。
  8. 根据权利要求2所述的显示面板，其中，所述显示面板还包括：数据线引出线；所述数据线引出线在所述基底上的正投影与所述功能膜层在所述基底上的正投影具有第二交叠区域，所述第二交叠区域位于所述第一弯折区、所述第二弯折区和所述第三弯折区中的至少一个区域中。
  9. 根据权利要求2所述的显示面板，其中，所述显示面板中还包括晶体管结构，所述晶体管结构的源极和漏极与所述第一导电图形同层设置。
  10. 根据权利要求1所述的显示面板，其中，位于所述第三弯折区的功能过孔沿第三方向的孔径等于沿第四方向的孔径。
  11. 根据权利要求1所述的显示面板，其中，所述功能膜层位于所述第一弯折区的部分包括间隔设置的多个功能过孔，位于所述第一弯折区的功能过孔沿第三方向的孔径大于沿第四方向的孔径。
  12. 根据权利要求11所述的显示面板，其中，所述多个功能过孔包括第一过孔和第二过孔，沿所述第四方向，所述第一过孔的孔径与所述第二过孔的孔径不同。
  13. 根据权利要求1所述的显示面板，其中，所述功能膜层位所述第二弯折区的部分包括间隔设置的多个功能过孔，位于所述第二弯折区的功能过孔沿第四方向的孔径大于沿第三方向的孔径。
  14. 根据权利要求13所述的显示面板，其中，所述多个功能过孔包括第三过孔和第四过孔，沿所述第三方向，所述第三过孔的孔径与所述第四过孔的孔径不同。
  15. 根据权利要求1所述的显示面板，其中，所述功能膜层位于所述第一弯折区的部分包括间隔设置的多个功能过孔，沿所述第一弯折区指向所述 第三弯折区的方向，位于所述第一弯折区的所述功能过孔的分布数量逐渐增加。
  16. 根据权利要求1所述的显示面板，其中，所述功能膜层位于所述第二弯折区的部分包括间隔设置的多个功能过孔，沿所述第二弯折区指向所述第三弯折区的方向，位于所述第二弯折区的所述功能过孔的分布数量逐渐增加。
  17. 根据权利要求1所述的显示面板，其中，所述功能膜层包括正电源信号线膜层或负电源信号线膜层。
  18. 根据权利要求1所述的显示面板，其中，所述功能膜层包括正电源信号线膜层和负电源信号线膜层；
    所述显示面板还包括：栅极驱动电路，所述栅极驱动电路在所述基底上的正投影，位于所述正电源信号线膜层在所述基底上的正投影，与所述负电源信号线膜层在所述基底上的正投影之间。
  19. 根据权利要求1所述的显示面板，其中，所述第一弯折区包括第一部分显示区和第一部分周边走线区；和/或，所述第二弯折区包括第二部分显示区和第二部分周边走线区。
  20. 根据权利要求1所述的显示面板，其中，所述第三弯折区为第一弯折区至第二弯折区的过渡区域。
  21. 根据权利要求1所述的显示面板，其中，所述第三弯折区与显示区不重叠。
  22. 根据权利要求1所述的显示面板，其中，所述显示面板还包括围堰，所述围堰包括位于第一弯折区的第一部分和第二弯折区的第二部分。
  23. 根据权利要求22所述的显示面板，其中，所述围堰还包括位于第三弯折区的第三部分。
  24. 一种显示装置，包括如权利要求1～23中任一项所述的显示面板。
  25. 一种显示面板的制作方法，所述显示面板包括能够沿第一方向弯折的第一弯折区，能够沿第二方向弯折的第二弯折区，以及位于所述第一弯折区和所述第二弯折区之间的第三弯折区，所述第一方向与所述第二方向相交；
    所述制作方法包括：
    在基底上制作功能膜层，所述功能膜层包括非镂空区，所述非镂空区位于所述第一弯折区和所述第二弯折区中的至少一个区域中；所述功能膜层位于所述第三弯折区的部分包括间隔设置的多个功能过孔。
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