WO2021190245A1 - 显示基板及其制备方法、显示装置 - Google Patents
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- WO2021190245A1 WO2021190245A1 PCT/CN2021/078256 CN2021078256W WO2021190245A1 WO 2021190245 A1 WO2021190245 A1 WO 2021190245A1 CN 2021078256 W CN2021078256 W CN 2021078256W WO 2021190245 A1 WO2021190245 A1 WO 2021190245A1
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Definitions
- the present disclosure relates to the field of display technology, and in particular to a display substrate, a preparation method thereof, and a display device.
- Mini Light Emitting Diode Mini LED
- Micro Light Emitting Diode Micro LED
- the advantages are applied to fields such as medium-size displays such as micro-displays and mobile TVs to large-screen displays in theaters.
- a display substrate includes: a first substrate, a plurality of light emitting devices, a light adjusting layer, and a second substrate.
- the plurality of light emitting devices are arranged on one side of the first substrate, and the plurality of light emitting devices are arranged at intervals from each other.
- the light adjustment layer is located in the gap between the plurality of light-emitting devices and on a side surface of the plurality of light-emitting devices away from the first substrate, so that at least one light-emitting device is covered by the light adjustment layer.
- the material of the light adjustment layer includes a light-absorbing material, and is configured to absorb at least a part of the light directed to the light adjustment layer.
- the second substrate covers the light adjusting layer.
- the light adjustment layer includes: a first sub-light adjustment layer and a second sub-light adjustment layer.
- the first sub-light adjusting layer is located in the gap between the plurality of light emitting devices. With respect to the first substrate, the first sub-light adjusting layer is far from the surface of the first substrate, and is flat, or higher than, or higher than the surface of the plurality of light-emitting devices away from the first substrate. Lower than the surface of the plurality of light emitting devices away from the first substrate.
- the material of the first sub-light adjusting layer includes a light-absorbing material, and is configured to absorb at least a part of the light directed to the first sub-light adjusting layer.
- the second sub-light adjusting layer is arranged on a side of the first sub-light adjusting layer away from the first substrate. Relative to the first substrate, the second sub-light adjusting layer is away from the surface of the first substrate, and is higher than the surface of the plurality of light-emitting devices away from the first substrate.
- the second sub-light adjusting layer is a transparent film.
- the first sub-light adjusting layer is far from the surface of the first substrate, which is lower than the surface of the plurality of light-emitting devices away from the first substrate.
- the second sub-light adjusting layer includes a first part and a second part.
- the orthographic projection of the first part on the first substrate coincides with the orthographic projection of the plurality of light-emitting devices on the first substrate, and the orthographic projection of the second part on the first substrate The projection coincides with the orthographic projection of the first sub-light adjusting layer on the first substrate.
- the thickness of the first part ranges from 20 ⁇ m to 100 ⁇ m.
- the thickness of the second part ranges from 50 ⁇ m to 100 ⁇ m.
- the refractive index of the second sub-light adjusting layer is greater than the refractive index of the second substrate.
- the distance between the surface of the first sub-light adjusting layer away from the first substrate and the first substrate is 80% to 120% of the thickness of the plurality of light emitting devices .
- the light adjustment layer further includes: a third light adjustment layer located in the gap between the plurality of light-emitting devices and disposed between the first sub-light adjustment layer and the first substrate.
- Sub-light adjustment layer Relative to the first substrate, the third sub-light adjusting layer is far from the surface of the first substrate, and is level with the surface of the plurality of light-emitting devices away from the first substrate, or lower than the surface of the first substrate.
- the plurality of light emitting devices are away from the surface of the first substrate.
- the material of the third sub-light adjustment layer includes a light-reflecting material, and is configured to reflect light incident into the third sub-light adjustment layer from the plurality of light-emitting devices back into the plurality of light-emitting devices.
- the light adjustment layer includes: a first sub-light adjustment layer and a third sub-light adjustment layer.
- the third sub-light adjusting layer is located in the gap between the plurality of light emitting devices. Relative to the first substrate, the third sub-light adjusting layer is far from the surface of the first substrate, and is level with the surface of the plurality of light-emitting devices away from the first substrate, or lower than the surface of the first substrate. The plurality of light emitting devices are away from the surface of the first substrate.
- the material of the third sub-light adjustment layer includes a light-reflecting material, and is configured to reflect light incident into the third sub-light adjustment layer from the plurality of light-emitting devices back into the plurality of light-emitting devices.
- the first sub-light adjusting layer is arranged on a side of the third sub-light adjusting layer away from the first substrate. Relative to the first substrate, the first sub-light adjusting layer is away from the surface of the first substrate, and is higher than the surface of the plurality of light-emitting devices away from the first substrate.
- the material of the first sub-light adjusting layer includes a light-absorbing material, and is configured to absorb at least a part of the light directed to the first sub-light adjusting layer.
- the reflectivity of the third sub-light adjusting layer is greater than or equal to 70%.
- each light emitting device includes: a third substrate; and, a light emitting layer provided on one side of the third substrate.
- the light-emitting layer is close to the first substrate with respect to the third substrate.
- the refractive index of the third substrate is greater than the refractive index of the second sub-light adjustment layer.
- the third sub-light adjusting layer when the light adjusting layer includes a third sub-light adjusting layer, relative to the first substrate, the third sub-light adjusting layer is away from the surface of the first substrate, Higher than the surface of the plurality of light emitting devices away from the first substrate.
- the material of the first sub-light adjusting layer when the light adjusting layer includes the first sub-light adjusting layer, includes acrylic glue doped with a light-absorbing material. In the case where the light adjustment layer includes a second sub-light adjustment layer, the material of the second sub-light adjustment layer includes acrylic glue. In the case where the light adjusting layer includes a third sub-light adjusting layer, the material of the third sub-light adjusting layer includes acrylic glue doped with a reflective material.
- a plurality of microstructures are provided on the surface of the second substrate on one side away from the first substrate.
- the plurality of microstructures are configured to change the propagation direction of at least a part of the light from the plurality of light-emitting devices and passing through the second substrate.
- the surface shape of the plurality of microstructures includes at least one of a pyramid, a wedge, an arc surface, and a spherical surface.
- a method for preparing a display substrate includes: providing a first substrate, and arranging a plurality of light-emitting devices spaced apart on one side of the first substrate.
- a second substrate is provided, a light-absorbing material is used, and a light adjusting layer is formed on one side of the second substrate.
- the first substrate on which the plurality of light emitting devices are formed and the second substrate on which the light adjusting layer is formed are pressed, so that the multiple light emitting devices are embedded in the light adjusting layer , And make a part of the light adjusting layer sink into the gap between the plurality of light-emitting devices, and the other part is located on a side surface of the plurality of light-emitting devices away from the first substrate.
- the pressing process includes a vacuum pressing process or a rolling process.
- a display device in another aspect, includes: the display substrate as described in any of the above embodiments.
- FIG. 1 is a method for preparing a display substrate according to related technologies
- Fig. 2 is a top view of a display substrate according to some embodiments of the present disclosure
- FIG. 3 is a cross-sectional view of the display substrate shown in FIG. 2 along the A-A' direction;
- FIG. 4 is another cross-sectional view along the A-A' direction of the display substrate shown in FIG. 2;
- FIG. 5 is another cross-sectional view along the A-A' direction of the display substrate shown in FIG. 2;
- FIG. 6 is another cross-sectional view along the A-A' direction of the display substrate shown in FIG. 2;
- FIG. 7 is another cross-sectional view along the A-A' direction of the display substrate shown in FIG. 2;
- FIG. 8 is another cross-sectional view along the A-A' direction of the display substrate shown in FIG. 2;
- FIG. 9 is another cross-sectional view of the display substrate shown in FIG. 2 along the A-A' direction;
- Fig. 10 is another cross-sectional view along the A-A' direction of the display substrate shown in Fig. 2;
- Fig. 11 is a structural diagram of a Mini LED according to some embodiments of the present disclosure.
- FIG. 12 is a structural diagram of a display substrate according to some embodiments of the present disclosure.
- FIG. 13 is a partial structure diagram of a display substrate according to some embodiments of the present disclosure.
- FIG. 14 is a partial structure diagram of another display substrate according to some embodiments of the present disclosure.
- FIG. 15 is a partial structure diagram of still another display substrate according to some embodiments of the present disclosure.
- FIG. 16 is a flowchart of a method for manufacturing a display substrate according to some embodiments of the present disclosure.
- FIG. 17 is a diagram of the preparation steps of a display substrate according to some embodiments of the present disclosure.
- FIG. 18 is a diagram of the preparation steps of another display substrate according to some embodiments of the present disclosure.
- FIG. 19 is a structural diagram of a display device according to some embodiments of the present disclosure.
- first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, “plurality” means two or more.
- connection and its extensions may be used.
- the term “connected” may be used when describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other.
- At least one of A, B, and C has the same meaning as “at least one of A, B, or C", and both include the following combinations of A, B, and C: only A, only B, only C, A and B The combination of A and C, the combination of B and C, and the combination of A, B and C.
- a and/or B includes the following three combinations: A only, B only, and the combination of A and B.
- the exemplary embodiments are described herein with reference to cross-sectional views and/or plan views as idealized exemplary drawings.
- the thickness of layers and regions are exaggerated for clarity. Therefore, variations in the shape with respect to the drawings due to, for example, manufacturing technology and/or tolerances can be envisaged. Therefore, the exemplary embodiments should not be construed as being limited to the shape of the area shown herein, but include shape deviations due to, for example, manufacturing.
- an etched area shown as a rectangle will generally have curved features. Therefore, the areas shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shape of the area of the device, and are not intended to limit the scope of the exemplary embodiments.
- Mini LED or Micro LED can emit light of multiple colors, such as red, green, blue, or yellow. Mini LED or Micro LED can be used as pixels and applied to the display substrate for display.
- the gaps between the multiple Mini LEDs and the surfaces of the multiple Mini LEDs are usually coated with black glue, and the black glue is ground by a grinding process, so that the black glue is located in the multiple Mini LEDs.
- the thickness of the part of the surface of the LED is the required thickness.
- the polished vinyl can be used to improve the contrast of the display device.
- due to the limitation of the polishing process currently only the thickness of the part of the vinyl on the surface of multiple Mini LEDs can be polished to 40 ⁇ m-50 ⁇ m.
- the thickness of the black glue is greater than that of the MiniLED, if the brightness displayed by the display substrate is the same as the brightness when the black glue is not provided, a larger driving voltage needs to be provided, which will increase the power consumption of the display substrate.
- the material of the vinyl is silica gel doped with black particles, during the process of grinding the vinyl, the black particles may disintegrate from the silica gel, causing the surface of the vinyl to be uneven after grinding. The appearance of the substrate may have an impact.
- the display substrate 100 includes a first substrate 1, a plurality of light-emitting devices 2 arranged on one side of the first substrate 1, a light adjusting layer 3, and a second substrate 4.
- the display substrate 100 has a plurality of sub-pixel regions S arranged in an array.
- each sub-pixel area S is provided with a light-emitting device 2.
- the one light-emitting device 2 is used to display the sub-pixels in the corresponding sub-pixel area S.
- a plurality of light-emitting devices 2 are provided in each sub-pixel area S, which are used for displaying together.
- a light emitting device 2 is provided in each sub-pixel region S as an example to schematically illustrate the structure of the display substrate 100.
- the above-mentioned first substrate 1 includes a base substrate 11, a plurality of pixel driving circuits, a plurality of gate lines, a plurality of data lines Data, a plurality of electrode leads 13, and a plurality of solders. point.
- the plurality of solder joints includes a plurality of anode solder joints 15 and a plurality of cathode solder joints 14.
- the plurality of gate lines Gate may extend in the first direction X
- the plurality of data lines Data may extend in the second direction Y, where the first direction X and the second direction Y intersect.
- the type of the base substrate 11 may include multiple types.
- the base substrate 11 may be a rigid base substrate, such as a glass base substrate or a PMMA (Polymethyl methacrylate, polymethyl methacrylate) base substrate.
- a rigid base substrate such as a glass base substrate or a PMMA (Polymethyl methacrylate, polymethyl methacrylate) base substrate.
- the base substrate 1 adopts a glass base substrate, it is beneficial to improve the accuracy of the wiring (for example, a plurality of pixel driving circuits and a plurality of electrode leads 13) provided on one side thereof.
- the base substrate 11 may be a flexible base substrate, such as a PET (Polyethylene terephthalate, polyethylene terephthalate) base substrate, PEN (Polyethylene naphthalate two formic acid glycol ester, polyethylene naphthalate) Glycol ester) substrate or PI (Polyimide, polyimide) substrate.
- PET Polyethylene terephthalate, polyethylene terephthalate
- PEN Polyethylene naphthalate two formic acid glycol ester, polyethylene naphthalate) Glycol ester
- PI Polyimide, polyimide
- the arrangement of the multiple pixel driving circuits described above is related to the arrangement of the light-emitting device 2.
- the plurality of pixel driving circuits are respectively located in the plurality of sub-pixel areas S.
- a plurality of pixel driving circuits arranged in a row along the first direction X may be electrically connected to a gate line Gate
- a plurality of pixel driving circuits arranged in a row along the second direction Y may be electrically connected to a data line Data.
- the structure of the pixel driving circuit may include multiple types.
- the structure of the pixel driving circuit may include structures such as “2T1C”, “6T1C”, “7T1C”, “6T2C” or “7T2C”.
- T represents a thin film transistor
- the number before “T” represents the number of thin film transistors
- C represents a storage capacitor
- the number before “C” represents the number of storage capacitors.
- one thin film transistor is a driving transistor.
- the plurality of electrode leads 13 and the plurality of pixel driving circuits are located on the same side of the base substrate 11.
- the arrangement of the plurality of electrode leads 13 is related to the arrangement of the light emitting device 2.
- each electrode lead 13 may be arranged in a row of sub-pixel regions S, and its extending direction may be parallel (or approximately parallel) to the extending direction of the row of sub-pixel regions S (that is, the first direction X).
- each electrode lead 13 may be arranged in a column of sub-pixel regions S, and its extension direction may also be parallel (or approximately parallel) to the extension direction of the column of sub-pixel regions S (that is, the first One direction Y).
- the number of electrode leads 13 provided in each row of sub-pixel regions S or each column of sub-pixel regions S is related to the number of light-emitting devices provided in each sub-pixel region S in the row of sub-pixel regions S or the column of sub-pixel regions S
- the number of 2 is the same.
- the above-mentioned multiple solder joints are arranged on the side of the multiple pixel driving circuits and the multiple electrode leads 13 away from the base substrate 11.
- the arrangement of the multiple solder joints is related to the arrangement and structure of the light emitting device 2.
- each light-emitting device 2 may be, for example, a Mini LED or a Micro LED, and each of the Mini LED or the Micro LED has two electrode pins (for example, a cathode electrode pin and an anode electrode pin).
- each sub-pixel area S one cathode solder joint 14 and one anode solder joint 15 may be provided.
- the anode solder joint 15 may be electrically connected to the pixel driving circuit (for example, electrically connected to the driving transistor 12 shown in FIG. 12 ), and the cathode solder joint 14 may be electrically connected to the electrode lead 13.
- the cathode electrode pin of the light-emitting device 2 can be inserted into the cathode solder joint 14 in the same sub-pixel area S, and the anode electrode pin can be inserted into the anode solder joint 15 in the same sub-pixel area S to realize the light-emitting device 2 and the pixel drive.
- the pixel driving circuit is configured to provide a driving voltage for the light-emitting device 2; the electrode lead 13 is configured to provide a common voltage for the light-emitting device 2. In this way, under the cooperation between the pixel driving circuit and the electrode lead 13, the light-emitting state of the light-emitting device 2 can be controlled, so that the display substrate 100 can realize gray-scale display.
- the embodiment of the present disclosure in addition to driving the plurality of light-emitting devices 2 in the above-mentioned driving manner, other driving manners may also be adopted.
- the embodiment of the present disclosure may also adopt a passive driving method or an IC (Integrated Circuit, integrated circuit) driving method to drive a plurality of light emitting devices 2.
- the above-mentioned first substrate 1 may include a base substrate 11, a plurality of integrated circuits 16, a plurality of power supply voltage signal lines Vcc, a plurality of first voltage signal lines VR, and a plurality of second voltage signal lines. Voltage signal line VGB and multiple data lines Data.
- the plurality of power supply voltage signal lines Vcc may extend in the first direction X
- the plurality of first voltage signal lines VR, the plurality of second voltage signal lines VGB, and the plurality of data lines Data may extend in the second direction Y.
- An integrated circuit 16 can be electrically connected to at least one light emitting device 2.
- one driving chip 81 may be electrically connected to three light emitting devices 2.
- the three light-emitting devices 2 include, for example, a red light-emitting device, a green light-emitting device, and a blue light-emitting device.
- the anode electrode pin of each red light-emitting device can be electrically connected to a first voltage signal line VR through the anode solder joint 15, and the anode electrode pin of each green light-emitting device can be electrically connected to a first voltage signal line VR through the anode solder joint 11.
- the second voltage signal line VGB is electrically connected, and the anode electrode pin of each blue light-emitting device can be electrically connected to a second voltage signal line VGB through an anode solder joint.
- the integrated circuit 16 may have six pins, of which three pins are electrically connected to the cathode electrode pins of the three light-emitting devices 2 through the cathode solder joints 14 respectively.
- one pin can be electrically connected to a data line Data
- one pin can be electrically connected to a power supply voltage signal line Vcc
- the other pin can be grounded.
- the multiple light-emitting devices 2 are spaced apart from each other, so that there is a gap between the multiple light-emitting devices 2.
- the light adjusting layer 3 is located in the gap between the plurality of light-emitting devices 2 and on the side surface of the plurality of light-emitting devices 2 away from the first substrate 1, so that at least one The light emitting device 2 is surrounded by the light adjusting layer 3.
- the light adjusting layer 3 "encloses" the at least one light emitting device 2, that is, the light adjusting layer is relatively close to the side surface of the at least one light emitting device 2 and the surface on the side away from the first substrate 1. In contact, the light adjusting layer forms a relatively complete coverage of the side surface of the at least one light-emitting device 2 and the surface of the side away from the first substrate 1.
- the at least one light-emitting device 2 can be relatively stably fixed on the first substrate 1 to avoid the light-emitting device 2 It is difficult to make a good electrical connection with the first substrate 1 due to looseness, thereby ensuring a good display effect of the display substrate 100.
- the material of the light adjusting layer 3 includes a light-absorbing material, which is configured to absorb at least a part of the light directed to the light adjusting layer 3.
- the light directed to the light adjusting layer 3 includes: light directed to the light adjusting layer 3 from the outside, and light emitted by a plurality of light emitting devices 2.
- the area of the light emitted from the outside to the light adjustment layer 3 is basically the same as the area of the surface of the light adjustment layer 3 on the side away from the first substrate 1, the light emitted from the outside to the light adjustment layer 3 is basically the same The upper surface can be completely absorbed by the light adjusting layer 3.
- the light adjusting layer 3 can be used to reduce the amount of light emitted from the outside to the display substrate 100 and emitted by the first substrate 1 and/or the plurality of light-emitting devices 2, so as to display
- the substrate 100 is in a dark state (that is, the light-emitting device does not emit light)
- the display surface of the display substrate 100 can be in a darker state, and the contrast of the display substrate 100 can be effectively improved.
- the material of the light adjustment layer 3 including the light-absorbing material can conduct light Absorption, excluding the part of the light-absorbing material can make the light pass through more smoothly.
- the light adjusting layer 3 absorbs only a part of the light emitted by the light emitting device 2, which reduces the amount of light absorbed by the light adjusting layer 3 to the light emitted by the light emitting device 2 compared with the related art, which is beneficial to reduce the display substrate 100 Power consumption.
- the second substrate 4 covers the light adjusting layer 3.
- the second substrate 4 may be a PET substrate.
- the PET substrate has better plasticity and higher transparency, which can ensure that the PET substrate has a good light transmittance and reduce or avoid loss of light passing through the PET substrate.
- the light adjustment layer 3 is formed on one side of the second substrate 4, and then the light adjustment layer 3 and the second substrate 4 are laminated on the first substrate where the plurality of light emitting devices 2 are formed by, for example, a pressing process.
- the substrate 1 Compared with the related art, it can not only avoid grinding the light adjusting layer 3, so that the surface of the light adjusting layer 3 away from the first substrate 1 is a relatively flat surface, but also can use the second substrate 4 to grind the light adjusting layer. 3 Form protection to prevent damage to the surface of the light adjustment layer 3 away from the first substrate 1 and make the surface chromaticity of the display substrate 100 have a highly consistent surface.
- a light adjusting layer is provided in the gap between the plurality of light-emitting devices 2 and on the side surface of the plurality of light-emitting devices 2 away from the first substrate 1. 3, and cover the second substrate 4 on the side of the light adjustment layer 3 away from the first substrate 1, so that not only the light adjustment layer 3 can be used to protect the multiple light-emitting devices 2, and the second substrate 4 can be used to adjust the light
- the layer 3 is protected, and the light adjusting layer 3 can also be used to absorb at least a part of the light directed to the light adjusting layer 3, which improves the contrast of the display substrate 100 and reduces the power consumption of the display substrate 100 compared with the related art.
- the light adjustment layer 3 and the second substrate 4 are laminated on the first substrate 1 on which a plurality of light-emitting devices 2 are formed by using, for example, a pressing process, the light adjustment layer 3 can be avoided compared with the related art. Grinding saves process, and at the same time can make the surface of the display substrate 100 have a higher consistency.
- the structure of the light adjustment layer 3 includes multiple types, and the type of the structure of the light adjustment layer 3 used in the display substrate 100 can be selected and set according to actual needs.
- the structure of the light adjusting layer 3 is schematically described below.
- the light adjustment layer 3 includes: a first sub-light adjustment layer 31 located in the gap between the plurality of light-emitting devices 2; A second sub-light adjusting layer 32 on one side of the substrate 1.
- the positional relationship between the first sub-light adjusting layer 31 and the plurality of light emitting devices 2 includes multiple types, which are related to the structure of the plurality of light emitting devices 2.
- the multiple light emitting devices 2 include Mini LEDs.
- the positional relationship between the first sub-light adjusting layer 31 and the plurality of light-emitting devices 2 may be: relative to the first substrate 1, the first sub-light adjusting layer 31 is away from the surface of the first substrate 1, and is connected to the plurality of light-emitting devices. 2
- the surface away from the first substrate 1 is flat, or, as shown in FIG. 4, is lower than the surface of the plurality of light-emitting devices 2 away from the first substrate 1.
- the first sub-light adjusting layer 31 is all located in the gap between the multiple light-emitting devices 2, and the first sub-light adjusting layer 31 also covers at least a part of the side surfaces of the multiple light-emitting devices 2.
- the first sub-light adjusting layer 31 is all located in the gap between the plurality of light emitting devices 2, the first sub-light adjusting layer 31 is away from the distance between the surface of the first substrate 1 and the first substrate 1, That is, the thickness of the first sub-light adjusting layer 31.
- the thickness of the first sub-light adjusting layer 31 may be 80%-100% of the thickness of the multiple light-emitting devices 2 (that is, the size of the multiple light-emitting devices 2 in the direction perpendicular to the first substrate 1).
- the thickness of the plurality of light emitting devices 2 may be 100 ⁇ m
- the thickness of the first sub-light adjusting layer 31 may be 80 ⁇ m-100 ⁇ m.
- the thickness of the plurality of light emitting devices 2 may be 150 ⁇ m
- the thickness of the first sub-light adjusting layer 31 may be 120 ⁇ m to 150 ⁇ m.
- the specific thickness of the first sub-light adjusting layer 31 can be selected and set according to actual needs.
- the multiple light-emitting devices 2 include Mini LEDs or Micro LEDs.
- the positional relationship between the first sub-light adjusting layer 31 and the plurality of light-emitting devices 2 may also be: relative to the first substrate 1, the first sub-light adjusting layer 31 is far from the surface of the first substrate 1 and is higher than the first substrate 1.
- the light emitting device 2 is away from the surface of the first substrate 1.
- a part of the first sub-light adjusting layer 31 is located in the gap between the plurality of light-emitting devices 2, and the other part is located on the side surface of the plurality of light-emitting devices 2 away from the first substrate 1.
- the first sub-light adjusting layer 31 The layer 31 also covers the exposed surfaces of the multiple light-emitting devices 2 (including the side surfaces of the multiple light-emitting devices 2 and the side surface away from the first substrate 1).
- the distance between the surface of the first sub-light adjusting layer 31 away from the first substrate 1 and the first substrate 1 may be greater than the thickness of the plurality of light-emitting devices 2 and less than or equal to the thickness of the plurality of light-emitting devices 2 120% of it.
- the multiple light-emitting devices 2 including Micro LEDs are taken as an example.
- the thickness of Micro LED is generally relatively small, for example, the thickness can be less than 10 ⁇ m.
- the thickness of the prepared first sub-light adjusting layer 31 may be about 10 ⁇ m. In this way, relative to the first substrate 1, the first sub-light adjusting layer 31 is far away from the surface of the first substrate 1 and is higher than the surface of the plurality of light-emitting devices 2 away from the first substrate 1.
- the thickness of the light emitting device 2 may be 10 ⁇ m, and the distance between the surface of the first sub-light adjusting layer 31 away from the first substrate 1 and the first substrate 1 may be greater than 10 ⁇ m and less than or equal to 12 ⁇ m.
- the specific thickness of the first sub-light adjusting layer 31 can be selected and set according to actual needs.
- the first sub-light adjusting layer 31 also covers the part of the first substrate 1 in the gap between the plurality of light-emitting devices 2, and there is a gap between the first sub-light adjusting layer 31 and the first substrate 1.
- the first sub-light adjusting layer 31 can be used to enhance the connectivity between the multiple light-emitting devices 2 and the first substrate 1, so that the multiple light-emitting devices 2 can be more firmly fixed on the first substrate. Bottom 1 on.
- the material of the first sub-light adjusting layer 31 includes a light-absorbing material, and is configured to absorb at least a part of the light directed to the first sub-light adjusting layer 31.
- the first sub-light adjusting layer 31 can be used to absorb the light emitted from the outside to the first sub-light adjusting layer 31, weaken or even prevent the light from being reflected by the first substrate 1 and/or the plurality of light-emitting devices 2.
- the display substrate 100 is in a dark state (that is, the light emitting device does not emit light)
- the display surface of the display substrate 100 can be made to be in a darker state, which is beneficial to improve the contrast of the display substrate 100.
- the first sub-light adjusting layer 31 is far away from the surface of the first substrate 1 and is higher than the surface of the plurality of light emitting devices 2 away from the first substrate 1.
- the distance between the surface of the first sub-light adjusting layer 31 away from the first substrate 1 and the first substrate 1 is at most 120% of the thickness of the light-emitting device 2, which greatly reduces the
- the size of the first sub-light adjusting layer 31 on the surface of the multiple light-emitting devices 2 away from the first substrate 1 is beneficial to reduce the absorption of the light emitted by the multiple light-emitting devices 2 by the first sub-light adjusting layer 31.
- the power consumption of the substrate 100 is displayed.
- the second sub-light-conditioning layer 32 included in the light-conditioning layer 3 is farther from the surface of the first substrate 1 than the first substrate 1, and is higher than the surface of the first substrate 1.
- the device 2 is far away from the surface of the first substrate 1. That is, a part of the second sub-light adjusting layer 32 will be located between the plurality of light-emitting devices 2 and the second substrate 4, so that it is formed on the first substrate 1 having the plurality of light-emitting devices 2 by using, for example, a pressing process.
- the part of the second sub-light adjustment layer 32 between the multiple light-emitting devices 2 and the second substrate 4 can be used to protect the multiple light-emitting devices 2 to avoid excessive Each light-emitting device 2 is damaged during the pressing process.
- the thickness of the second sub-light adjusting layer 32 is related to the positional relationship between the first sub-light adjusting layer 31 and the plurality of light emitting devices 2.
- the surface of the first sub-light adjusting layer 31 away from the first substrate 1 is level with the surface of the plurality of light-emitting devices 2 away from the first substrate 1, or is higher than the surface of the first substrate 1.
- the surface of the second sub-light adjusting layer 32 close to the first substrate 1 is a relatively flat surface, so that each part of the second sub-light adjusting layer 32 The thickness will be more uniform.
- the thickness of the second sub-light adjusting layer 32 can be selected and set according to actual needs. For example, the thickness of the second sub-light adjusting layer 32 may range from 50 ⁇ m to 100 ⁇ m; or, the thickness of the second sub-light adjusting layer 32 may range from 10 ⁇ m. ⁇ 40 ⁇ m.
- the first sub-light adjusting layer 31 is far from the surface of the first substrate 1, which is lower than the surface of the plurality of light-emitting devices 2 away from the first substrate 1.
- the surface of the second sub-light adjusting layer 32 close to the first substrate 1 is an uneven surface.
- the second sub-light adjusting layer 32 includes a first portion 321 and a second portion 322, wherein the orthographic projection of the first portion 321 on the first substrate 1 is the same as the orthographic projection of the plurality of light emitting devices 2 on the first substrate 1.
- the projections coincide, and the orthographic projection of the second portion 322 on the first substrate 1 coincides with the orthographic projection of the first sub-light adjusting layer 31 on the first substrate 1.
- the thickness of the first part 321 may range from 20 ⁇ m to 100 ⁇ m.
- the thickness of the second portion 322 ranges from 50 ⁇ m to 100 ⁇ m.
- the thickness range of the first portion 321 and the thickness range of the second portion 322 can also be other numerical ranges, which can be selected and set according to actual needs.
- the above-mentioned second sub-light adjusting layer 32 is a transparent film.
- the transparent film has a high light transmittance (for example, the light transmittance can be greater than or equal to 90%).
- the light emitted by the multiple light-emitting devices 2 can pass through the second sub-light adjusting layer 32 to the outside more smoothly, so that the second sub-light adjusting layer 32 can prevent the second sub-light adjusting layer 32 from causing adverse effects on the propagation of the light emitted by the multiple light-emitting devices 2 Influence.
- the refractive index of the second sub-light adjusting layer 32 is greater than the refractive index of the second substrate 4.
- the refractive index of the second sub-light adjusting layer 32 may be about 1.5, for example, the refractive index may be 1.49, 1.5, 1.51, or 1.52, etc.; the refractive index of the second substrate 4 may be about 1.4, for example, the refractive index may be It is 1.39, 1.4, 1.41 or 1.42, etc.
- the refractive index of light from the outside atmosphere is about 1.0
- the refractive index of the second sub-light adjusting layer 32 is made larger than that of the second substrate 4.
- the refractive index can make the light emitted by the multiple light-emitting devices 2 radiate from the optically dense medium to the optically thin medium step by step in the process of being emitted to the outside. Compared with the light emitted by a plurality of light-emitting devices 2 directly into the external atmosphere, it is beneficial to guide the emission of light, weaken or even avoid the situation of total reflection.
- the light adjustment layer 3 includes the first sub-light adjustment layer 31 and the second sub-light adjustment layer 32, and further includes: a third sub-light adjustment layer 33.
- the third sub-light adjusting layer 33 is located in the gap between the plurality of light-emitting devices 2 and disposed between the first sub-light adjusting layer 31 and the first substrate 1. That is, the third sub-light adjusting layer 33, the first sub-light adjusting layer 31, and the second sub-light adjusting layer 32 are sequentially stacked along the direction of the first substrate 1.
- the positional relationship between the first sub-light adjusting layer 31 and the plurality of light emitting devices 2 may be: relative to the first substrate 1, the third sub-light adjusting layer 31 is far away from the surface of the first substrate 1, and It is flat with the surface of the plurality of light emitting devices 2 away from the first substrate 1 or, as shown in FIG. 6, is lower than the surface of the plurality of light emitting devices 2 away from the first substrate 1.
- the third sub-light adjusting layer 33 is all located in the gap between the plurality of light-emitting devices 2, and the third sub-light adjusting layer 33 also covers at least a part of the side surfaces of the plurality of light-emitting devices 2.
- the material of the third sub-light adjustment layer 33 includes a light-reflecting material, and is configured to reflect the light incident into the third sub-light adjustment layer 33 from the plurality of light-emitting devices 2 back into the plurality of light-emitting devices 2. In this way, when the light emitted by the plurality of light-emitting devices 2 is directed to the side surface of the plurality of light-emitting devices 2 covered by the third sub-light adjusting layer 33, it can be reflected at least once under the action of the third sub-light adjusting layer 33.
- the reflected light can be emitted from the surface of the multiple light-emitting devices 2 away from the first substrate 1 to the outside, which is beneficial to improve the utilization rate of the light emitted by the multiple light-emitting devices 2 and improve the light efficiency of the display substrate 100 , To reduce the power consumption of the display substrate 100.
- the third sub-light adjusting layer 33 only covers at least a part of the side surfaces of the multiple light-emitting devices 2, which can ensure that the light emitted by the multiple light-emitting devices 2 can be emitted from the surface away from the first substrate 1 and avoid the light from appearing. After the light-emitting devices 2 are directed away from the surface of the first substrate 1, the light-emitting devices 2 are reflected back into the multiple light-emitting devices 2 and are difficult to be projected to the outside.
- the reflectivity of the third sub-light adjusting layer 33 is greater than or equal to 70%. This can effectively ensure that the third sub-light adjustment layer 33 has a good reflection effect on the light emitted by each light-emitting device 2 and directed to the third sub-light adjustment layer 33, and ensures that the display substrate 100 has a higher light efficiency and a lower light effect. Power consumption.
- the reflectivity of the third sub-light adjusting layer 33 may be 70%, 80%, 90%, 95%, or the like.
- the positional relationship between the first sub-light adjusting layer 31 and the plurality of light emitting devices 2 may be: relative to the first substrate 1.
- the first sub-light adjusting layer 31 is far away from the surface of the first substrate 1, and is level with the surface of the plurality of light-emitting devices 2 away from the first substrate 1, or is higher or lower than the surface of the plurality of light-emitting devices 2 away from the first substrate.
- the distance between the surface of the first sub-light adjusting layer 31 away from the first substrate 1 and the first substrate 1 is 80% to 120% of the thickness of the plurality of light emitting devices 2.
- first sub-light adjusting layer 31 and the second sub-light adjusting layer 32 For other descriptions of the first sub-light adjusting layer 31 and the second sub-light adjusting layer 32, reference may be made to the descriptions of the first sub-light adjusting layer 31 and the second sub-light adjusting layer 32 in some of the above examples, which will not be repeated here.
- the light adjustment layer 3 may include: a third sub-light adjustment layer 33 and a first sub-light adjustment layer 31.
- the material of the third sub-light adjusting layer 33 includes a light-reflecting material, and is configured to reflect the light incident from the plurality of light-emitting devices 2 into the third sub-light adjusting layer 33 back into the plurality of light-emitting devices 2.
- the material of the first sub-light adjusting layer 31 includes a light-absorbing material, and is configured to absorb at least a part of the light directed to the first sub-light adjusting layer 31.
- the third sub-light adjusting layer 33 is located in the gap between the plurality of light emitting devices 2. Relative to the first substrate 1, the third sub-light adjusting layer 33 is far away from the surface of the first substrate 1, and is level with the surface of the plurality of light-emitting devices 2 away from the first substrate 1, or is lower than the surface of the plurality of light-emitting devices 2 away from the first substrate 1. The surface of the first substrate 1. At this time, the third sub-light adjusting layer 33 is all located in the gap between the multiple light-emitting devices 2, and the third sub-light adjusting layer 33 also covers at least a part of the side surfaces of the multiple light-emitting devices 2.
- the first sub-light adjusting layer 31 is disposed on the side of the third sub-light adjusting layer 33 away from the first substrate 1. Compared with the first substrate 1, the first sub-light adjusting layer 31 is far away from the surface of the first substrate 1, and is higher than the surface of the plurality of light-emitting devices 2 away from the first substrate 1.
- the first sub-light adjusting layer 31 is opposite to The plurality of light-emitting devices 2 and the third sub-light adjusting layer 33 form a covering, and a part of the first sub-light adjusting layer 31 is located on the surface of the plurality of light-emitting devices 2 away from the first substrate 1 to form a covering for the plurality of light-emitting devices 2 protect.
- the third sub-light adjusting layer 33 can be utilized under the cooperation between the third sub-light adjusting layer 33 and the first sub-light adjusting layer 31.
- the utilization rate of the light emitted by the multiple light-emitting devices 2 is improved, the light efficiency of the display substrate 100 is improved, the power consumption of the display substrate 100 is reduced, and the first sub-light adjustment layer 31 is used to improve the contrast of the display substrate 100.
- the thickness of the first sub-light adjustment layer 31 can be adjusted to adjust the first sub-light adjustment layer 31 on the surface of the plurality of light-emitting devices 2 away from the first substrate 1.
- the thickness is 10 ⁇ m
- the first sub-light adjusting layer 31 can be used to improve the contrast of the display substrate 100 while reducing the emission of the first sub-light adjusting layer 31 to the plurality of light-emitting devices 2
- the absorption of light reduces the power consumption of the display substrate 100.
- the materials of each film included in the light adjusting layer 3 include multiple types.
- the material of the first sub-light adjusting layer 31 includes acrylic glue doped with a light-absorbing material.
- the light-absorbing material may include carbon black particles, for example.
- the material of the second sub-light adjusting layer 32 includes acrylic glue.
- the material of the third sub-light adjusting layer 33 includes acrylic glue doped with a reflective material.
- the reflective material may include titanium dioxide particles, for example.
- the above-mentioned acrylic adhesive has the advantages of colorless and transparent, high light transmittance (for example, the light transmittance can be greater than or equal to 90%), and good bonding strength.
- This can make the light adjustment layer 3 have the advantages of Good adhesion, so that the light adjustment layer 3 and the first substrate 1, each light-emitting device 2, and the second substrate 4 have good adhesion, which can strengthen each light-emitting device 2 and the first substrate. At the same time, it avoids the second substrate 4 or the light adjusting layer 3 from falling off.
- each light-emitting device 2 includes: a third substrate 22, and a light-emitting device disposed on one side of the third substrate 22 Layer 21.
- the light-emitting layer 21 is close to the first substrate 1 relative to the third substrate 22.
- the structure of the light-emitting device 2 is schematically described.
- the above-mentioned Mini LED includes a third substrate 22, an N-type semiconductor layer 23, a light-emitting layer 21, a P-type semiconductor layer 24, a current blocking layer 25, a conductive layer 26, a Bragg reflective layer 27,
- the cathode electrode pin 28 may be connected to the electrode lead 13 through the cathode solder joint 14, and the anode electrode pin 29 may be connected through the anode solder joint 15. Connected to the driving transistor 12.
- the light-emitting layer 21 can emit light, so that the light emitted by each light-emitting layer 21 can pass through the third substrate 22, the light adjusting layer 3, and the second substrate 4 in sequence before being emitted to the outside.
- the refractive index of the third substrate 22 is greater than the refractive index of the second sub-light adjusting layer 32.
- the refractive index of the second sub-light adjusting layer 32 is greater than the refractive index of the second substrate 4, and the refractive index of the second substrate 4 is greater than the refractive index of the external atmosphere, the refractive index of the third substrate 22 is set to be greater than the refractive index of the second substrate 4.
- the refractive index of the two sub-light adjusting layer 32 can make the refractive index of each medium that the light emitted by the light-emitting layer 21 passes through to the outside world gradually decrease according to a certain gradient. Compared with the light directly into the outside atmosphere, it is beneficial to guide the emission of light, weaken or even avoid the situation of total reflection, and improve the efficiency of light emission.
- the material of the third substrate 22 may include a sapphire material, and the refractive index of the third substrate 22 may be about 1.77.
- the refractive index may be 1.76, 1.77, 1.78, or the like.
- the third sub-light adjusting layer 33 is away from the surface of the first substrate 1, and the positional relationship between the third sub-light adjusting layer 33 and the plurality of light emitting devices 2, It may also include: relative to the first substrate 1, the third sub-light adjusting layer 33 is away from the surface of the first substrate 1, and is higher than the surface of the plurality of light-emitting devices 2 away from the first substrate 1. In this way, it can be ensured that the light directed to the third sub-light adjusting layer 33 can basically be reflected back into the light-emitting device 2 to avoid the phenomenon that the reflected light is directed to the adjacent light-emitting device 2 and causes color mixing.
- the display substrate 100 further includes a reflective layer 5 disposed in the gap between the cathode solder joint 14 and the anode solder joint 15. One side of the substrate 1.
- the reflective layer 5 By providing the reflective layer 5 on the side of the multiple light-emitting devices 2 close to the first substrate 1, the reflective layer 5 can be used to reflect the light emitted to the reflective layer 5 into the multiple light-emitting devices 2 and pass through the multiple light-emitting devices. 2A side surface away from the first substrate 1 is shot to the outside. This is beneficial to increase the utilization rate of the light emitted by the multiple light-emitting devices 2, improve the light efficiency of the display substrate 100, and reduce the power consumption of the display substrate 100.
- the material of the reflective layer 5 may be white ink with higher reflectivity.
- the surface of the side of the second substrate 4 away from the first substrate 1 may be a flat surface.
- a plurality of microstructures 41 may also be provided on the surface of the second substrate 4 away from the first substrate 1.
- the plurality of microstructures 41 are configured to change the propagation direction of at least a part of the light from the plurality of light-emitting devices 2 and passing through the second substrate 4.
- the shape of the plurality of microstructures 41 is related to the change of the propagation direction of at least a part of the light passing through the second substrate 4.
- the surface shape of the plurality of microstructures 41 includes at least one of a pyramid and a wedge.
- the tip of the pyramid or wedge is located on the side away from the second substrate 41.
- the above-mentioned multiple microstructures 41 can collect at least a part of the light from the multiple light-emitting devices 2 and passing through the second substrate 4, which is beneficial to improve the display brightness of the display substrate 100.
- the size of the microstructure 41 can be selected and set according to actual needs.
- the height of the microstructure 41 (that is, the size of the microstructure 41 in a direction perpendicular to the first substrate 1) may be about 12 ⁇ m
- the width of the microstructure 41 (that is, the microstructure 41 as shown in FIG. 9
- the size of the connection between the structure 41 and the second substrate 4 may be about 24 ⁇ m.
- the height of the microstructure 41 may be 11 ⁇ m, 12 ⁇ m, or 13 ⁇ m, etc.
- the width of the micro structure 41 may be 23 ⁇ m, 24 ⁇ m, or 25 ⁇ m, etc.
- the surface shape of the plurality of microstructures 41 includes at least one of a curved surface and a spherical surface.
- the plurality of microstructures 41 can diffuse at least part of the light from the plurality of light-emitting devices 2 passing through the second substrate 4, improve the uniformity of light output of the display substrate 100, and avoid glare on the surface of the display substrate 100 .
- the size of the microstructure 41 can be selected and set according to actual needs.
- the diameter of the microstructure 41 may be 20 ⁇ m-30 ⁇ m
- the height of the microstructure 41 (that is, the size of the microstructure 41 in a direction perpendicular to the first substrate 1) may be about 10 ⁇ m.
- the diameter of the microstructure 41 may be 20 ⁇ m, 23 ⁇ m, 27 ⁇ m, or 30 ⁇ m
- the height of the micro structure 41 may be 9 ⁇ m, 10 ⁇ m, or 11 ⁇ m.
- the above-mentioned multiple microstructures and the second substrate 4 are an integral structure. This is beneficial to simplify the structure of the display substrate 100.
- an etching process may be used to etch the surface of the second substrate 4 away from the first substrate 1 to form the multiple microstructures 41 described above. Since the second substrate 4 has a certain hardness, the structure of the multiple microstructures 41 formed by the etching process is extremely stable and can avoid deformation.
- the display substrate 100 may be applied to a liquid crystal display device as a light source in a backlight module in the liquid crystal display device.
- the light adjustment layer 3 may include: a third sub-light adjustment layer 33 located in the gap between the plurality of light-emitting devices 2, and a third sub-light adjustment layer 33 disposed far away from the first liner.
- the second sub-light adjusting layer 32 on the side of the bottom 1.
- the third sub-light adjusting layer 33 is far away from the surface of the first substrate 1, and is lower than the light-emitting layer 21 in the plurality of light-emitting devices 2 and is far from the surface of the first substrate 1;
- the light adjusting layer 32 is far away from the surface of the first substrate 1 and is higher than the surface of the plurality of light emitting devices 2 away from the first substrate 1.
- the third sub-light adjusting layer 33 can be used to more comprehensively reflect the light emitted from the multiple light-emitting devices 2 from various directions, and the second sub-light adjusting layer 32 and the second substrate 4 can be used to guide the light to avoid The phenomenon of total reflection occurs, and thus, the brightness that can be displayed by the display substrate 100 can be effectively increased.
- the display substrate 100 further includes a quantum dot film disposed on a side of the second substrate 4 away from the first substrate 1 and respectively located in a plurality of sub-pixel regions.
- the multiple light-emitting devices 2 all emit blue light, and the blue light will be converted into light of multiple colors, such as red light or green light, after passing through the quantum dot film in the multiple sub-pixel regions.
- Some embodiments of the present disclosure provide a method for preparing a display substrate. As shown in FIG. 16, the preparation method of the display substrate includes S100-S300.
- the above-mentioned multiple light emitting devices 2 may include Mini LEDs, or may also include Micro LEDs.
- Mass Transfer Technology Mass Transfer Technology
- Mass Transfer Technology may be used to transfer the multiple light-emitting devices 2 to one side of the first substrate 1.
- the structure of the first substrate 1 the structure of the plurality of light-emitting devices 2, and the connection between the first substrate 1 and the plurality of light-emitting devices 2, reference may be made to the description in some of the above-mentioned embodiments, which will not be repeated here. .
- a second substrate 4 is provided, and a light-absorbing material is used to form a light adjusting layer 3 on one side of the second substrate 4.
- the second substrate 4 may be a PET substrate, that is, the second substrate 4 may be a thin film structure made of PET.
- forming the light adjusting layer 3 on one side of the second substrate 4 includes: coating a material for forming the light adjusting layer 3 on one side of the second substrate 4, and curing the material to form the light adjusting layer 3 Layer 3.
- the light adjusting layer 3 includes a first sub-light adjusting layer 31 and a second sub-light adjusting layer 32 that are stacked.
- forming the light adjusting layer 3 on one side of the second substrate 4 may include: coating a material for forming the second sub-light adjusting layer 32 on one side of the second substrate 4 and curing it, Forming the second sub-light adjusting layer 32; coating another thin film (such as a release film) with the material used to form the first sub-light adjusting layer 31 and curing it to form the first sub-light adjusting layer 31; The first sub-light adjusting layer 31 and the second sub-light adjusting layer 32 are laminated, and the film attached to the side of the first sub-light adjusting layer 31 is removed to obtain the light formed on the side of the second substrate 4 Adjustment layer 3.
- the material of the light adjusting layer 3 further includes acrylic glue.
- acrylic adhesive has the advantage of curing at room temperature or medium temperature
- the material for forming the light adjusting layer 3 can be made at room temperature or medium temperature. Curing, so that additional curing operations can be avoided, which is beneficial to simplify the preparation process of the display substrate 100 and save the cost of preparing the display substrate 100.
- the multiple light-emitting devices 2 can gradually extend into the light adjusting layer 3 until the multiple light-emitting devices 2 are completely embedded in the light adjusting layer 3; Filling is performed until the gaps between the plurality of light-emitting devices 2 are filled.
- the other part of the light adjustment layer 3 is located on the surface of the plurality of light-emitting devices 2 away from the first substrate 1, that is, between the plurality of light-emitting devices 2 and the second substrate 4, so that the light adjustment layer 3 can be used.
- the other part protects the multiple light-emitting devices 2 to prevent the second substrate 4 from directly contacting the multiple light-emitting devices 2 and damage the light-emitting devices 2.
- the light adjusting layer 3 is formed on one side of the second substrate 4, and then a lamination process is used to treat the second substrate with a plurality of light emitting devices 2 formed thereon.
- a substrate 1 and a second substrate 4 formed with a light adjusting layer 3 are pressed together so that a plurality of light emitting devices 2 are embedded in the light adjusting layer 3, and a part of the light adjusting layer 3 is trapped between the plurality of light emitting devices 2 The other part is located on the side surface of the plurality of light-emitting devices 2 away from the first substrate 1.
- the light adjustment layer 3 can be used to absorb at least a part of the light directed to the light adjustment layer 3 to improve the display substrate 100 At the same time, the power consumption of the display substrate 100 will not be increased.
- the preparation method of the display substrate 100 provided by some embodiments of the present disclosure is simple in process and easy to operate, which avoids grinding the light adjustment layer 3, thereby avoiding the surface whitening of the display substrate 100. And make the surface of the display substrate 100 have a higher consistency.
- the above-mentioned pressing process may include a vacuum pressing process.
- the second substrate 4 on which the light adjusting layer 3 is formed can be pressed together while vacuuming, so that the light adjusting layer 3 is close to the surface of the multiple light-emitting devices 2 and can be substantially simultaneously with the multiple light-emitting devices 2
- the contact allows a plurality of light emitting devices 2 to extend into and be embedded in the light adjusting layer 3 at the same time. Moreover, the formation of bubbles between the light adjusting layer 3 and the first substrate 1 is also avoided.
- the above-mentioned pressing process may include a rolling process.
- the device 2 is sequentially embedded in the light adjusting layer 3 from one end of the first substrate 1 to the opposite end, and then the temperature rise and defoaming operation is performed. This can reduce or even eliminate bubbles that may occur between the light adjustment layer 3 and the first substrate 1.
- the hardness of the film on the side close to the plurality of light emitting devices 2 is smaller than the hardness of the film on the side far from the plurality of light emitting devices 2.
- the light adjustment layer 3 includes a first sub-light adjustment layer 31 and a second sub-light adjustment layer 32 that are stacked.
- the hardness of the first sub-light adjusting layer 31 is less than the hardness of the second sub-light adjusting layer 32.
- the first sub-light adjusting layer 31 Relative to the first substrate 1, when the first sub-light adjusting layer 31 is far from the first substrate 1, and is lower than the surface of the plurality of light-emitting devices 2 far away from the first substrate 1, it can be slowed down. And it is convenient to control the speed at which the multiple light-emitting devices 2 extend into the second sub-light adjusting layer 32, so as to prevent the multiple light-emitting devices 2 from penetrating the second sub-light adjusting layer 32 and contacting the second substrate 2, thereby causing It is beneficial to avoid a situation in which multiple light-emitting devices 2 are damaged.
- some embodiments of the present disclosure may also control the thickness of the second sub-light adjusting layer 32 to control the speed at which the multiple light-emitting devices 2 extend into the light adjusting layer 3.
- the display device 200 includes the display substrate 100 as provided in some of the above embodiments.
- the display substrate 100 included in the above-mentioned display device 200 has the same structure and beneficial effects as the display substrate 100 provided in some of the above-mentioned embodiments, and will not be repeated here.
- the above-mentioned display device 200 further includes: a housing for installing the above-mentioned display substrate 100, and/or a camera installed on the display substrate 100, and the like.
- the above-mentioned display device 200 is any product or component with a display function, such as electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, and so on.
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Abstract
Description
Claims (17)
- 一种显示基板,包括:第一衬底;设置在所述第一衬底一侧的多个发光器件,所述多个发光器件相互间隔设置;光线调节层,所述光线调节层位于所述多个发光器件之间的间隙内、以及所述多个发光器件远离所述第一衬底的一侧表面上,以使至少一个发光器件被所述光线调节层包围;所述光线调节层的材料包括吸光材料,被配置为对射向至所述光线调节层的至少一部分光线进行吸收;以及,覆盖所述光线调节层的第二衬底。
- 根据权利要求1所述的显示基板,其中,所述光线调节层包括:位于所述多个发光器件之间的间隙内的第一子光线调节层;相对于所述第一衬底,所述第一子光线调节层远离所述第一衬底的表面,与所述多个发光器件远离所述第一衬底的表面持平,或者,高于或低于所述多个发光器件远离所述第一衬底的表面;所述第一子光线调节层的材料包括吸光材料,被配置为对射向至所述第一子光线调节层的至少一部分光线进行吸收;以及,设置在所述第一子光线调节层远离所述第一衬底一侧的第二子光线调节层;相对于所述第一衬底,所述第二子光线调节层远离所述第一衬底的表面,高于所述多个发光器件远离所述第一衬底的表面;所述第二子光线调节层为透明薄膜。
- 根据权利要求2所述的显示基板,其中,在相对于所述第一衬底,所述第一子光线调节层远离所述第一衬底的表面,低于所述多个发光器件远离所述第一衬底的表面的情况下,所述第二子光线调节层包括第一部分和第二部分,所述第一部分在所述第一衬底上的正投影与所述多个发光器件在所述第一衬底上的正投影重合,所述第二部分在所述第一衬底上的正投影与所述第一子光线调节层在所述第一衬底上的正投影重合,所述第一部分的厚度范围为20μm~100μm,所述第二部分的厚度范围为50μm~100μm。
- 根据权利要求2或3所述的显示基板,其中,所述第二子光线调节层的折射率大于所述第二衬底的折射率。
- 根据权利要求2~4中任一项所述的显示基板,其中,所述第一子光线调节层远离所述第一衬底的表面与所述第一衬底之间的间距,为所述多个发光器件的厚度的80%~120%。
- 根据权利要求2~5中任一项所述的显示基板,其中,所述光线调节层还包括:位于所述多个发光器件之间的间隙内、且设置在所述第一子光线调节层与所述第一衬底之间的第三子光线调节层;相对于所述第一衬底,所述第三子光线调节层远离所述第一衬底的表面,与所述多个发光器件远离所述第一衬底的表面持平,或者,低于所述多个发光器件远离所述第一衬底的表面;所述第三子光线调节层的材料包括反光材料,被配置为将由所述多个发光器件入射至所述第三子光线调节层中的光线反射回所述多个发光器件中。
- 根据权利要求1所述的显示基板,其中,所述光线调节层包括:位于所述多个发光器件之间的间隙内的第三子光线调节层;相对于所述第一衬底,所述第三子光线调节层远离所述第一衬底的表面,与所述多个发光器件远离所述第一衬底的表面持平,或者,低于所述多个发光器件远离所述第一衬底的表面;所述第三子光线调节层的材料包括反光材料,被配置为将由所述多个发光器件入射至所述第三子光线调节层中的光线反射回所述多个发光器件中;以及,设置在所述第三子光线调节层远离所述第一衬底一侧的第一子光线调节层;相对于所述第一衬底,所述第一子光线调节层远离所述第一衬底的表面,高于所述多个发光器件远离所述第一衬底的表面;所述第一子光线调节层的材料包括吸光材料,被配置为对射向至所述第一子光线调节层的至少一部分光线进行吸收。
- 根据权利要求6或7所述的显示基板,其中,所述第三子光线调节层的反射率大于或等于70%。
- 根据权利要求2~7中任一项所述的显示基板,其中,每个发光器件包括:第三衬底;以及,设置在所述第三衬底一侧的发光层;所述发光层相对于所述第三衬底靠近所述第一衬底。
- 根据权利要求9所述的显示基板,其中,在所述光线调节层包括第二子光线调节层的情况下,所述第三衬底的折射率大于所述第二子光线调节层的折射率。
- 根据权利要求9或10所述的显示基板,其中,在所述光线调节层包括第三子光线调节层的情况下,相对于所述第一衬底,所述第三子光线调节层远离所述第一衬底的表面,高于所述多个发光器件远离所述第一衬底的表 面。
- 根据权利要求2~11中任一项所述的显示基板,其中,在所述光线调节层包括所述第一子光线调节层的情况下,所述第一子光线调节层的材料包括掺杂有吸光材料的亚克力胶;在所述光线调节层包括第二子光线调节层的情况下,所述第二子光线调节层的材料包括亚克力胶;在所述光线调节层包括第三子光线调节层的情况下,所述第三子光线调节层的材料包括掺杂有反光材料的亚克力胶。
- 根据权利要求1~12中任一项所述的显示基板,其中,所述第二衬底远离所述第一衬底的一侧表面设置有多个微结构;所述多个微结构被配置为,使来自所述多个发光器件并穿过所述第二衬底的至少一部分光线的传播方向发生改变。
- 根据权利要求13所述的显示基板,其中,所述多个微结构的表面形状包括棱锥、楔形、弧面和球面中的至少一种。
- 一种显示基板的制备方法,包括:提供第一衬底,在所述第一衬底的一侧设置相互间隔的多个发光器件;提供第二衬底,采用吸光材料,在所述第二衬底的一侧形成光线调节层;采用压合工艺,对形成有所述多个发光器件的第一衬底和形成有所述光线调节层的第二衬底进行压合,使所述多个发光器件嵌入所述光线调节层内,并使所述光线调节层的一部分陷入所述多个发光器件之间的间隙内,另一部分位于所述多个发光器件远离所述第一衬底的一侧表面上。
- 根据权利要求15所述的显示基板的制备方法,其中,所述压合工艺包括真空压合工艺或滚压工艺。
- 一种显示装置,包括:如权利要求1~14中任一项所述的显示基板。
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CN113097371B (zh) * | 2021-03-31 | 2022-08-12 | 厦门天马微电子有限公司 | 一种显示面板及其制备方法、显示装置 |
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CN116014051A (zh) * | 2021-10-22 | 2023-04-25 | 隆达电子股份有限公司 | 微型发光二极管封装结构 |
CN116031251A (zh) * | 2021-10-27 | 2023-04-28 | 京东方科技集团股份有限公司 | 封装结构、显示基板及其制作方法、显示装置 |
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CN114551697A (zh) * | 2022-02-09 | 2022-05-27 | 深圳市华星光电半导体显示技术有限公司 | 显示基板及显示面板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106384738A (zh) * | 2016-10-28 | 2017-02-08 | 福州大学 | 一种基于压印工艺的Micro‑LED显示器件 |
CN107731864A (zh) * | 2017-11-20 | 2018-02-23 | 开发晶照明(厦门)有限公司 | 微发光二极管显示器和制作方法 |
CN107833903A (zh) * | 2016-09-15 | 2018-03-23 | 伊乐视有限公司 | 具有光管理***的发光显示器 |
CN108878626A (zh) * | 2018-06-29 | 2018-11-23 | 京东方科技集团股份有限公司 | 一种显示面板及制作方法、显示装置 |
KR20190077789A (ko) * | 2017-12-26 | 2019-07-04 | 한국광기술원 | 마이크로 led를 이용한 디스플레이 및 그 제조방법 |
CN211879404U (zh) * | 2020-03-27 | 2020-11-06 | 京东方科技集团股份有限公司 | 显示基板及显示装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7259030B2 (en) * | 2004-03-29 | 2007-08-21 | Articulated Technologies, Llc | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
TWI573299B (zh) * | 2008-12-31 | 2017-03-01 | 榮創能源科技股份有限公司 | 化合物半導體元件之封裝模組結構及其製造方法 |
US8431423B2 (en) * | 2009-07-16 | 2013-04-30 | Koninklijke Philips Electronics N.V. | Reflective substrate for LEDS |
JP5566785B2 (ja) * | 2010-06-22 | 2014-08-06 | 日東電工株式会社 | 複合シート |
US20130187540A1 (en) * | 2012-01-24 | 2013-07-25 | Michael A. Tischler | Discrete phosphor chips for light-emitting devices and related methods |
DE102016119002B4 (de) * | 2016-10-06 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
JP7082273B2 (ja) * | 2017-07-21 | 2022-06-08 | 日亜化学工業株式会社 | 発光装置、集積型発光装置および発光モジュール |
JP6411685B1 (ja) * | 2017-10-12 | 2018-10-24 | ルーメンス カンパニー リミテッド | ディスプレイ用ledモジュール組立体 |
KR102660614B1 (ko) * | 2018-09-10 | 2024-04-26 | 삼성전자주식회사 | 디스플레이 장치 및 그 제조 방법 |
-
2020
- 2020-03-27 CN CN202010232324.3A patent/CN113451486A/zh active Pending
- 2020-12-24 TW TW109145944A patent/TWI765491B/zh active
-
2021
- 2021-02-26 KR KR1020227002123A patent/KR20220159936A/ko unknown
- 2021-02-26 US US17/618,031 patent/US20220262995A1/en active Pending
- 2021-02-26 EP EP21775135.3A patent/EP4131435A4/en active Pending
- 2021-02-26 WO PCT/CN2021/078256 patent/WO2021190245A1/zh active Application Filing
- 2021-02-26 JP JP2022502266A patent/JP2023518626A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107833903A (zh) * | 2016-09-15 | 2018-03-23 | 伊乐视有限公司 | 具有光管理***的发光显示器 |
CN106384738A (zh) * | 2016-10-28 | 2017-02-08 | 福州大学 | 一种基于压印工艺的Micro‑LED显示器件 |
CN107731864A (zh) * | 2017-11-20 | 2018-02-23 | 开发晶照明(厦门)有限公司 | 微发光二极管显示器和制作方法 |
KR20190077789A (ko) * | 2017-12-26 | 2019-07-04 | 한국광기술원 | 마이크로 led를 이용한 디스플레이 및 그 제조방법 |
CN108878626A (zh) * | 2018-06-29 | 2018-11-23 | 京东方科技集团股份有限公司 | 一种显示面板及制作方法、显示装置 |
CN211879404U (zh) * | 2020-03-27 | 2020-11-06 | 京东方科技集团股份有限公司 | 显示基板及显示装置 |
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