WO2021185769A1 - Suscepteur pour réacteur cvd - Google Patents

Suscepteur pour réacteur cvd Download PDF

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Publication number
WO2021185769A1
WO2021185769A1 PCT/EP2021/056546 EP2021056546W WO2021185769A1 WO 2021185769 A1 WO2021185769 A1 WO 2021185769A1 EP 2021056546 W EP2021056546 W EP 2021056546W WO 2021185769 A1 WO2021185769 A1 WO 2021185769A1
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WO
WIPO (PCT)
Prior art keywords
gas
susceptor
gas outlet
rotation
storage space
Prior art date
Application number
PCT/EP2021/056546
Other languages
German (de)
English (en)
Inventor
Wilhelm Josef Thomas KRÜCKEN
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Priority to CN202180021880.9A priority Critical patent/CN115298351A/zh
Publication of WO2021185769A1 publication Critical patent/WO2021185769A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas

Definitions

  • the invention relates to a susceptor for a CVD reactor with two broad side surfaces pointing away from one another.
  • a first of the two broad side surfaces has a large number of storage spaces, each for receiving one or more substrates.
  • the storage locations are arranged in a circle around an axis of rotation of the susceptor.
  • the invention also relates to a CVD reactor for the thermal treatment of substrates with such a susceptor, the first broad side surface of the susceptor facing a process chamber into which process gases are fed.
  • the second broad side surface points in the direction of a heating device with which the susceptor is heated to a process temperature.
  • the heating device lies opposite the second broad side surface.
  • the gas outlet openings, with which a gas is fed into the spacing space open into this spacing space.
  • the invention also relates to a method for the thermal treatment of substrates in such a CVD reactor, in which a gas is fed into the space between the heating device and the second broad side surface of the susceptor.
  • PRIOR ART DE 102019104433 A1 describes a CVD reactor with a susceptor.
  • substrate holders On the susceptor are substrate holders that can hold one or more substrates.
  • the substrate holders are each in a storage space training pockets and are driven in rotation.
  • a sealing plate Between the heating device and a second broad side surface of the susceptor is a sealing plate with which a space within the housing of the CVD reactor, in which the heating device is located, is shielded from the process gas fed into the process chamber.
  • a temperature control gas is fed into a space between the heating device and the second broad side surface of the susceptor. With the temperature control gas flow, the heat inflow or the heat dissipation to or from the susceptor can be changed at locally restricted heat-influencing zones.
  • the tempering gas is fed in through fixed gas outlet openings.
  • the gas outlet openings are arranged in the sealing plate. The heat flow from the heating device to the substrate can be varied individually by means of a periodically pulsed supply of the temperature control gas
  • No. 6,569,250 B2 describes a susceptor with a gas outlet opening.
  • DE 102005056536 Al, DE 102009043960 Al, DE 102011 053498 Al, DE 102013109155 Al, DE 102014 104218 Al, DE 102017105333 Al, US 2018/0182635 Al, US 5,468,299 A and DE 102011 055061 Al also belong to the state of the art.
  • DE 102009044276 A1 describes a discharge line opening into a space between the susceptor and the heating device, with which a gas can be discharged from a pocket arranged below a substrate holder.
  • DE 102018130 138 A1 describes a CVD reactor with a susceptor, in which the susceptor has gas outlet openings in its surrounding edge.
  • DE 102018132673 A1 describes a CVD reactor in which gas outlet openings open into the broad side surfaces of the susceptor facing the process chamber.
  • the invention is based on the object of specifying an alternative method or an alternative device with which the susceptor temperature can be influenced locally in order to be able to individually adapt the surface temperatures of substrates arranged in storage locations.
  • gases in particular tempering gases, whose thermal conductivity property is changed by changing a mixing ratio of two purge gases forming the tempering gas, one of which has a high thermal conductivity and the other of which has a low thermal conductivity
  • the feed takes place from the susceptor through a gas outlet opening which rotates with the susceptor and which has a permanently unchangeable spatial position in relation to a storage location on which a substrate can rest.
  • at least one gas outlet opening is assigned to each storage space.
  • Each gas outlet opening that rotates with the susceptor is connected to a feed line with a feed opening.
  • the device according to the invention preferably has a gas mixing device with which the temperature control gas is provided.
  • the gas mixing device can use a variety of mass flow controllers each mass flow controller is preferably flow-connected to only one feed opening, so that an individual gas flow and in particular an individual gas mixture can be assigned to each outlet opening of each plurality of outlet openings assigned to the same storage space. In this way, an individual temperature gas atmosphere can be set between each storage space for a substrate and the heating device. As a result, the heat inflow or the heat dissipation to or from the substrate can be changed locally.
  • the heat-influencing zones arranged below the storage locations are fixed.
  • the heat-affected zones migrate around the axis of rotation of the susceptor.
  • at least one of the gas outlet openings arranged in the second broad side surface of the susceptor is assigned to each storage location. It is a spatial assignment. The assignment is also functional, since the temperature gas flowing out of the gas outlet opening flows into the heat-influencing zone arranged between the storage space and the heating device.
  • the temperature control gas atmosphere can be set individually in each heat-influencing zone, either by changing the mass flow of a temperature control gas that mixes with an ambient gas or by changing the composition of a temperature control gas consisting of several components, whereby the various components can have different thermal conductivity properties , for example, can consist of hydrogen and nitrogen.
  • One of the first, upper broad side surface of the susceptor delimited downward process chamber is delimited at the top by a cover plate.
  • the ceiling plate can be cooled actively or passively.
  • a gas inlet element is provided with which process gases are fed into the process chamber.
  • the gas inlet element can extend in the area of the axis of rotation.
  • the central gas inlet member has several gas outlet openings arranged in a circumferential surface, through which the process gas enters the Process chamber can flow in.
  • the process gas is provided in the gas mixing system and can contain various reactive gases which react with one another within the process chamber, preferably on the surface of the substrate, in such a way that a layer is deposited on the substrate.
  • the process gases can contain hydrides of main group III and organometallic compounds of main group V.
  • the process gases can, however, also contain elements of main group IV or elements of main group II and VI.
  • a semiconducting and monocrystalline layer is preferably deposited on the substrate.
  • the process gas flows through the process chamber in a radial direction and is discharged by means of a gas outlet element which surrounds the preferably circular disk-shaped susceptor in an annular manner.
  • the gas outlet member can have openings or the like in order to remove the tem periergas.
  • the storage spaces can be formed from pockets arranged in the first broad side surface of the susceptor. Outlet openings through which a purge gas enters the pockets are provided in the bottoms of the pockets.
  • the flushing gas forms a gas cushion which carries a substrate holder on which the substrate to be coated rests.
  • the substrate holder is also set in rotation with the flushing gas flow.
  • at least one gas outlet opening is provided for each storage space, this gas outlet opening being arranged between the center of the susceptor and the storage space.
  • the temperature control gas emerging from the gas outlet opening flows below the storage area in a radially outward direction.
  • the opening width of the gas outlet opening can correspond to the diameter of a supply line, for example it can be circular.
  • the exit opening can, however, also be elongated. You can extend straight or curved.
  • the gas outlet opening preferably extends over a sector area over which the storage space also extends.
  • a plurality of gas outlet openings can be provided, which are arranged one behind the other in the radial direction, that is to say on different radial distances from the center.
  • a second gas outlet opening can, for example be arranged vertically below the storage space.
  • Another gas outlet opening can be arranged radially outside the storage area. If several gas outlet openings are provided for each storage space, they are arranged identically at each storage space. Even if only one gas outlet opening is seen before, all these gas outlet openings are preferably the same radial distance from the center.
  • the gas outlet openings are supplied with the temperature control gas preferably through the susceptor and preferably additionally through a shaft carrying the susceptor.
  • feed lines formed by bores run within the susceptor, for example in the radial direction.
  • a feed line is preferably assigned to each gas outlet opening.
  • the feed lines can have an outwardly pointing feed opening in the area of the shaft. This rotates around the axis of rotation as the susceptor rotates.
  • each feed opening can be supplied with temperature control gas during the rotation.
  • the feed openings that are assigned to the various gas outlet openings are preferably one above the other in the axial direction, based on the axis of rotation.
  • an optical or other temperature measuring device can be provided with which the surface temperature of each substrate or each storage space can be measured.
  • a stationary, in particular optical temperature measuring device for example with a pyrometer
  • the substrate temperature can be measured through an opening in the process chamber ceiling.
  • the temperature measuring device As the susceptor rotates, the substrates move past below the temperature measuring device, so that the temperatures of all substrates can be determined one after the other.
  • the temperature control gas flows assigned to the individual substrates can be changed in such a way that the substrates have essentially the same surface temperature.
  • a lateral temperature profile on the substrate can also be modified or a surface temperature of the susceptor downstream of the Substrates.
  • the energy is transported from the heating device to the susceptor via an electromagnetic alternating field which induces eddy currents in the susceptor which heat the susceptor.
  • the heating device can be a cooled induction coil.
  • the induction coil can be located in a spiral in a plane below the susceptor.
  • the coil can be formed by a tube through which a coolant flows.
  • the heat transfer from the susceptor to a coil cooled in this way takes place in part by conduction through the gas located in the space between the susceptor and the heating device.
  • the heat flow from the susceptor to the heating device can thus be adjusted or influenced locally and individually for each storage location by varying the composition of the temperature control gas.
  • a flushing gas flow is fed into the gap between the lower broad side surface of the susceptor and the sealing plate.
  • the flushing gas flow can be fed in at a position arranged radially inward of the storage space and in particular in the immediate vicinity of a central carrier of the susceptor.
  • One or more flushing gas feed lines can open into the gap there, so that a radial gas flow is formed between the susceptor and the sealing plate.
  • the gas flow emerging from the abovementioned gas outlet openings can enter this flushing gas flow.
  • the two gases have different thermal conductivity properties, so that the mixing of the two gas flows creates a temperature gas flow whose thermal conductivity can be adjusted by changing the mass flow of at least one of the two gases.
  • the gas outlet opening opening into the lower broad side surface of the susceptor opens into a recess in the underside of the susceptor.
  • the recess can extend over the sector that the storage space includes takes.
  • the recess is open in particular to the peripheral edge of the susceptor. This forms a section of the gap between the susceptor and the sealing plate, which has a larger gap width in the area of a storage area.
  • the recess can widen in the radial direction and have walls extending in the radial direction.
  • FIG. 2 in the manner of a section according to the section lines II-II in FIG. 1, a plan view of a susceptor 2,
  • FIG. 3 similar to FIG. 1, shows a cross section of a CVD reactor of a second exemplary embodiment
  • Fig. 4 shows a sector of a susceptor 2 in the bottom view of a third embodiment
  • FIG. 5 shows a section of a gas mixing system.
  • Fig. 6 shows a representation according to Figure 3 of a third gameheldsbei
  • Fig. 7 in a representation according to Figure 4, the third gameheldsbei
  • FIG. 8 shows the third exemplary embodiment in a viewing direction VIII in FIG. 7.
  • FIGs 1 and 3 show in the manner of a cross section schematically a CVD reactor with an outwardly gas-tight housing 1.
  • a susceptor 2 which is formed by a particularly coated graphite plate, which is carried by a shaft 14, wel cher is driven to rotate about an axis of rotation A by a rotary drive.
  • a heating device 8 which can be an IR heater, an RF heater or the like. The heating device 8 supplies heat with which the susceptor 2 can be heated to a process temperature of 500 to 1500 ° C.
  • a circular disk-shaped sealing disk 9 which can consist of a ceramic material, quartz, metal or coated graphite.
  • the sealing disk 9 has in its center an opening through which the shaft 14, which is driven in rotation when the device is in operation, protrudes.
  • the sealing disk 9 is stationary with respect to the housing 1 and the heating device 8 attached to the housing the susceptor 2 is a gap 23.
  • the gap 23 has gap walls moving against each other when the device is in operation, namely the second, downward-facing broad side 2 of the substrate holder and the upward-facing broad side of the sealing plate 9.
  • This gap generally flows a purge gas in the radial outward direction, an S opening into the gap for this purpose purging gas supply line 28 with a flushing gas outlet opening 27.
  • a gas fed into the gap 23 through an outlet opening 10 in FIG. 1 or through outlet openings 10, 15, 18 in FIG. 3 is transported to the outside with the flushing gas.
  • a shear force is exerted, which has the consequence that a gas flow, which is fed into the gap 23 through the gas outlet opening 10, for example, is deflected on its way in the radially outward direction in the direction of the susceptor rotation.
  • the first broad side surface 2 'of the susceptor 2, which faces a process chamber 4 and the second broad side surface 2 ′′ of the susceptor 2 is opposite, has a storage space forming pocket 22 in which there is a substrate holder 3 on which a Rests on the substrate 21.
  • a gas nozzle (not shown) arranged in the bottom of the pocket 22 can be used to feed in a flushing gas with which a gas cushion is generated on which the substrate holder 3, which is also driven in rotation by the gas cushion, floats.
  • a gas inlet member 6 In the center of the process chamber 4 is a gas inlet member 6, through which the above-mentioned process gases can be fed into the process chamber.
  • the process gases flow over the susceptor 2 and the substrates 21 and reach a gas outlet element 7 which surrounds the susceptor 2 in a ring.
  • the process chamber 4 is delimited towards the top by an actively or passively cooled or also heated process chamber ceiling 5.
  • the outer edge of the sealing disk rests on a radially inner edge of the gas outlet element 7.
  • the sealing disk 9 thus seals the space of the housing of the CVD reactor from the process gas.
  • each feed opening 13 is connected to a feed line which connects each feed opening 13 individually to a gas outlet opening 10, 15 or 18 opening into the gap 23.
  • the shaft has supply lines 12, 17 and 20 which extend in the axial direction and the susceptor has supply lines 11, 16, 19 connected thereto and extending in the radial direction.
  • Each of the feed lines or feed openings 13 can be flow-connected to two mass flow controllers 25, 26.
  • the two mass flow controllers 24, 26 can each be used to provide a gas mixture which consists of a highly thermally conductive gas, for example hydrogen, and a less thermally conductive gas, for example nitrogen.
  • the feed lines or feed openings 13 are only connected to a gas source or a mass flow controller that provide a purge gas that has a different thermal conductivity than the gas that is otherwise present in the interior of the housing.
  • each storage space 12 is individually assigned a gas outlet opening 10 through which an individual temperature gas flow or an individual temperature gas mixture can be fed into the space below the susceptor 2, which is located below the storage space 22 is located.
  • the gas outlet opening 10 is offset in the radial inward direction with respect to the storage space 22 in such a way that the temperature control gas flow exiting from the gas outlet opening 10 flows along in the radial outward direction under the storage space 22.
  • the gas outlet openings 10 are arranged on a connecting line between the center of the storage space 22 or the sub strathalters 3 and the axis of rotation A.
  • the gas outlet openings 10 but can also be arranged offset in the circumferential direction to this connecting line and in particular offset in such a way that the above-described shear force promotes the temperature control gas during its flow in the direction below the storage area 22.
  • a further gas outlet opening 15 arranged approximately in the middle of the storage space 22 is provided.
  • a further gas outlet opening 18 arranged radially outside of storage space 2 or on the radially outer edge of storage space 22 is provided, with which the temperature profile can be further influenced by feeding in a suitable gas mixture or a suitable gas flow.
  • These further gas outlet openings 15, 18 can be arranged on a line connecting the center of the storage area 22 with the axis of rotation A or offset thereto.
  • Figure 4 shows an example of a variant of a design of the gas outlet openings 10, 15, 18. They are arranged as curved, straight or arcuate depressions in the bottom 2 ′′ of the susceptor 2.
  • the depressions extend in particular in the circumferential direction around the axis of rotation A. They can have a length that extends approximately over the sector of a circle occupied by bin location 22.
  • a purging gas outlet opening 27 of a purging gas feed line 28 opens into the gap 23 between the broad side surface 22 'of the susceptor 2 and the sealing plate 9.
  • a purging gas can be in the gap 23 are fed, which flows through the gap in the radial direction.
  • the purge gas outlet opening 27 is offset radially inward relative to the storage location 22 arranged so that the flushing gas emerging from the flushing gas outlet opening 27 flows along under the storage space 22.
  • a gas outlet opening 10 for feeding a further gas is arranged in the broad side surface 22 'of the susceptor 2 facing the sealing plate 9.
  • a gas can exit through the gas outlet opening 10, the thermal conductivity of which differs from the thermal conductivity of the gas that enters the gap 23 through the flushing gas outlet opening 27.
  • the thermal conductivity of the gas below the storage area 22 can be changed ver.
  • a recess 29 is provided under each storage space on the wide side 22 'of the susceptor 2 facing away from the storage space 22.
  • the recess 29 has a bottom surface which runs parallel to the broad side surface 22 'of the susceptor 2 ver.
  • the recess 29 is open towards the peripheral edge of the susceptor 2 and has two walls which extend essentially in the radial direction.
  • the gas outlet opening 10 opens radially inside the storage space 22 into the recess 29. The gas emerging from the gas outlet opening 10 enters the recess 29 and flows through the recess 29 in the radial direction up to its opening, from where the gas flows into the gas outlet element 7.
  • the two substantially radially extending side walls 29 'of the recess 29 are outside the circumference of the storage space 22.
  • the bottom 29 "of the recess 29 is at a distance from the broad side surface 22' surrounding the recess 29 that is significantly smaller than half the material thickness of the susceptor 2 and in particular less than a quarter of the material thickness of the susceptor 2.
  • the walls 29 'of Recesses have a gas-conducting function.
  • the heating device 8 can be formed by one or more spirally extending tubes through which a cooling liquid flows.
  • a heat flow is formed between the hot second broad side surface 2 ′′ of the susceptor 2 and the colder heating device 8.
  • the spirally extending tubes form a coil that generates an alternating electromagnetic field that induces eddy currents in the electrically conductive susceptor 2 which the susceptor 2 is heated.
  • First feed lines can be provided through which a gas stream flows which creates a gas cushion on which a substrate holder floats.
  • the feed lines according to the invention are second feed lines that are separate and different from the first feed lines.
  • the gas outlet openings 10, 15, 18 opening into the second broad side surface 2 ′′ of the susceptor 2 are directly connected to the feed lines 11, 16, 19 extending in the radial direction.
  • the latter are again directly connected to the feed lines extending in the shaft in the axial direction 12, 17 and 20 connected so that the in the supply lines 12, 17, 20 or the
  • Supply lines 11, 16, 19 fed gas flow exclusively through the gas outlet openings 10, 15 or 18 in the space 23 between the heating device 8 and the lower broad side surface 2 ′′ of the susceptor 2 enters.
  • temperature control gases can be fed into the second feed lines.
  • the flushing gas fed into the first feed lines can be provided by a first gas source.
  • the temperature control gas that can be fed into the second feed lines can be provided by a second gas source different from the first gas source.
  • the invention thus also relates to a device in the form of a susceptor 2 which can be driven in rotation about an axis of rotation A for a CVD reactor a first broadside surface 2 ′′, on which a plurality of storage locations 22 for receiving the substrates 21 to be treated around the axis of rotation A are angeord net, with a second broadside surface 2 ′′ pointing away from the first broadside surface 2, with each storage location 22 at least one in the second broadside surface 2 "opening gas outlet opening 10, 15, 18 is spatially zugeord net, characterized by a sealing plate 9 spaced apart from the second broadside surface 22 'of susceptor 2 by a gap 23.
  • a device which is characterized in that 2 gas outlet openings 10, 15, 18 are provided in the second broad side surface, at least one of the gas outlet openings 10, 15, 18 being spatially assigned to each storage space 22.
  • a device which is characterized in that the gas outlet openings 10, 15, 18 are arranged in the second broad side surface 2 of the susceptor 2 and at least one of the gas outlet openings 10, 15, 18 is spatially assigned to each storage location 22.
  • each storage location 22 is assigned at least one of the gas outlet openings 10, 15, 18 arranged in the second broad side surface 2 ′′ of the susceptor 2, through which a gas flow flows.
  • a device which is characterized in that the spacing space is formed by a gap 23 between a sealing plate 9 and the second broad side surface 2 ′′ of the susceptor 2 and / or that a sealing plate 9 is seated between the susceptor 2 and the heating device 8 .
  • a device which is characterized in that a gas inlet element 6 arranged in the axis of rotation A and an annular gas outlet element 7 arranged around the susceptor 2 having a circular outline are provided and / or that at least one gas outlet opening 10 between the axis of rotation A and the assigned storage space 22 is angeord net and / or that each gas outlet opening 10, 15, 18 with at least one feed line 11, 12, 16, 17, 19, 20 with a feed opening 13 is flow-connected, into which a mass flow controller 25 is individually adjustable gas flow of a temperature gas can be fed.
  • a method which is characterized in that with a gas inlet element 6 arranged in the axis of rotation A, a gas stream containing process gases is fed into the process chamber 4, which flows in the radial direction through the process chamber 4 and by means of an annular, circular outline having susceptor 2 arranged gas outlet element 7 is discharged and / or that the gas is discharged by means of the gas outlet element 7 and / or that the from at least one
  • the gas flow of a tempering gas exiting between the axis of rotation A and the assigned storage location 2 is set individually by a mass flow controller 25 and / or that the gas flows through under the storage location 22.
  • a device which is characterized in that at least one second gas outlet opening 15, 18 is arranged between a first gas outlet opening 10 arranged between the axis of rotation A and storage location 22 and a radially outer edge of the susceptor 2 and / or that a second Gas outlet opening 15, 18 is arranged below the storage space 22 or between storage space 22 and a radially outer edge of the susceptor 2 and / or that the first and / or second gas outlet openings 10, 15, 18 of elongated, straight or arcuate recesses in the second Broad side surface 2 ′′ are formed and / or that a recess forming the gas outlet openings 10, 15, 18 extends over a sector filling the storage space 22 and / or a gas mixing system with a first source at least one first flushing gas and / or with a second source provides a second purge gas, the purge gases by their thermal conductivity u differentiate and / or with a gas mixing system a gas flow and / or an adjustable mixture of a flow of two purge gases is distributed
  • a method which is characterized in that a first gas flow between the axis of rotation A and storage area 22 and a second gas flow below a storage area 2 or between storage area 2 and an outer edge of the susceptor 2 is fed into the spacing space and / or that the The first gas flow and / or the second gas flow is fed into the second broad side surface 2 ′′ by means of an elongated, straight or curved recess, and / or that the recess extends over a sector filling the storage space 22 and / or a gas mixing system with a first Source provides at least a first flushing gas and / or a second flushing gas with a second source, the flushing gases differing in their thermal conductivity and / or a gas flow with a gas mixing system and / or an adjustable mixture of a flow of two flushing gases to a plurality of mass flow controllers 25 is distributed and / or that at least the in di e the various storage spaces 22 spatially assigned gas exit openings 10, 15, 18 fed, the gas flows forming the pur

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un réacteur CVD comprenant un suscepteur (2) pouvant être entraîné en rotation autour d'un axe de rotation (A) par un entraînement rotatif (24), comprenant une première surface latérale large (2') pointant vers une chambre de traitement (4), sur laquelle une pluralité d'emplacements de stockage (22) pour recevoir les substrats (21) à traiter sont disposés autour de l'axe de rotation (A), comprenant une seconde surface latérale large (2'') orientée à l'opposé de la première surface latérale, qui est opposée à un dispositif de chauffage (8) pour chauffer le suscepteur (2) à une température de traitement, et comprenant des ouvertures de sortie de gaz (10, 15, 18) débouchant dans une zone d'espacement entre le dispositif de chauffage (8) et la seconde surface latérale large (2'') du suscepteur (2) pour amener un gaz de régulation de température dans la zone d'espacement. Selon l'invention, afin de pouvoir influencer localement le transfert de chaleur entre le dispositif de chauffage (8) et le suscepteur (2), les ouvertures de sortie de gaz (10, 15, 18) sont disposées dans la seconde surface latérale large (2'') du suscepteur (2) et au moins une des ouvertures de sortie de gaz (10, 15 18) est spatialement attribuée à chaque emplacement de stockage (22).
PCT/EP2021/056546 2020-03-18 2021-03-15 Suscepteur pour réacteur cvd WO2021185769A1 (fr)

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CN114686974A (zh) * 2022-03-30 2022-07-01 上海埃延半导体有限公司 一种用于衬底外延的反应器
WO2023091629A3 (fr) * 2021-11-22 2023-07-13 Cvd Equipment Corporation Améliorations apportées à des systèmes de dépôt chimique en phase vapeur

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DE102021103368A1 (de) 2021-02-12 2022-08-18 Aixtron Se CVD-Reaktor mit einem ein Gaseinlassorgan umgebenden Temperrierring
DE102022130987A1 (de) 2022-11-23 2024-05-23 Aixtron Se Verfahren zum Einrichten eines CVD-Reaktors

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023091629A3 (fr) * 2021-11-22 2023-07-13 Cvd Equipment Corporation Améliorations apportées à des systèmes de dépôt chimique en phase vapeur
CN114686974A (zh) * 2022-03-30 2022-07-01 上海埃延半导体有限公司 一种用于衬底外延的反应器

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