WO2021171490A1 - 半導体解析システム - Google Patents
半導体解析システム Download PDFInfo
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- WO2021171490A1 WO2021171490A1 PCT/JP2020/008056 JP2020008056W WO2021171490A1 WO 2021171490 A1 WO2021171490 A1 WO 2021171490A1 JP 2020008056 W JP2020008056 W JP 2020008056W WO 2021171490 A1 WO2021171490 A1 WO 2021171490A1
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- thin film
- processing
- film sample
- analysis system
- fib
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Definitions
- the present invention relates to a semiconductor analysis system.
- a method of preparing a sample for observation of a transmission electron microscope (TEM) by using a FIB-SEM apparatus equipped with a focused ion beam (FIB) and a scanning electron microscope (SEM) is widely known.
- a thin film sample for TEM analysis is cut out as an observation sample from a desired region on the semiconductor wafer, and structural analysis and defect analysis of the observation sample by TEM are performed. Further, by feeding back the analysis result of the observation sample to the processing conditions, the accuracy of preparing the observation sample can be improved.
- Patent Document 1 states that in the preparation of a sample for a transmission electron microscope, productivity is improved by not using deposition when fixing a flaky sample prepared by processing with a charged particle beam to a sample holder. Techniques for improvement are disclosed.
- an object of the present invention is to improve the accuracy of automatic thin film sample preparation and the accuracy of automatic thin film sample observation.
- the semiconductor analysis system includes a processing apparatus for processing a semiconductor wafer to prepare a thin film sample for observation, and a transmission electron microscope apparatus for acquiring a transmission electron microscope image of the thin film sample.
- a high-level control device for controlling a processing device and a transmission type electron microscope device. The upper control device evaluates the thin film sample based on the transmission electron microscope image, updates the processing conditions based on the evaluation result of the thin film sample, and outputs the updated processing conditions to the processing device.
- FIG. 1 is a schematic configuration diagram showing an example of a semiconductor analysis system according to the first embodiment of the present invention.
- the semiconductor analysis system 100 includes a FIB-SEM device (processing device) 101, a TEM device 102, and a host control device 103.
- the SEM is a scanning electron microscope.
- TEM is a transmission electron microscope
- STEM which will be described later, is a scanning transmission electron microscope.
- the FIB-SEM device 101 is a device having a FIB device for producing (cutting out) a thin film sample SAM for observation from a semiconductor wafer WAF and an SEM device for observing the semiconductor wafer WAF or the produced thin film sample SAM.
- the SEM device may not be included.
- the TEM device 102 is a device that performs structural analysis and defect analysis of the thin film sample SAM.
- the TEM device 102 acquires a TEM image (transmission electron microscope image) of the thin film sample SAM by diffraction contrast or phase contrast.
- the TEM device 102 may have the structure and function of the STEM device.
- the TEM apparatus 102 may acquire a HAADF image as a STEM image (scanning transmission electron microscope image) of the thin film sample SAM.
- the FIB-SEM device 101 and the TEM device 102 can communicate with each other via the host control device 103.
- the upper control device 103 is a device that controls the FIB-SEM device 101 and the TEM device 102.
- the upper control device 103 provides basic control such as operation start and stop for the FIB-SEM device 101 and the TEM device 102, output of FIB processing conditions for the semiconductor wafer WAF, and TEM observation conditions for the thin film sample SAM produced by FIB processing. Output etc. Further, the upper control device 103 evaluates the produced thin film sample SAM based on the TEM image (STEM image) output from the TEM device 102, updates the FIB processing conditions based on the evaluation result, and the like.
- STEM image TEM image
- the main processing in the semiconductor analysis system 100 is as follows.
- a thin film sample SAM is produced (cut out) from the semiconductor wafer WAF conveyed in the FIB apparatus.
- the prepared thin film sample SAM is placed on a carrier CAR for TEM observation.
- the TEM observation carrier CAR on which the thin film sample SAM is placed is transported from the FIB-SEM device 101 to the TEM device 102, and the TEM device 102 performs structural analysis and defect analysis of the thin film sample SAM.
- the upper control device 103 is described as an independent component, but the FIB-SEM device 101 may take part or all of the functions of the upper control device 103, or the TEM.
- the device 102 may carry it.
- the semiconductor wafer WAF may be transported using a container capable of accommodating a plurality of wafers, or may be transported by being placed on a cartridge that can be inserted into the FIB-SEM apparatus 101. Further, the TEM observation carrier CAR may be transported using a container capable of accommodating a plurality of carriers, or may be transported by being placed on a cartridge that can be inserted into the TEM device 102.
- the semiconductor wafer WAF and the TEM observation carrier CAR may be partially or wholly handled by a human or a transport robot.
- FIG. 2 is a schematic configuration diagram showing another example of the semiconductor analysis system according to the first embodiment of the present invention.
- the semiconductor analysis system 200 of FIG. 2 has a configuration in which an ALTS (Auto Lamella Transfer System) device 201 is added to the semiconductor analysis system 100 of FIG.
- the ALTS device 201 is a device that automatically transfers the thin film sample SAM produced (cut out) on the semiconductor wafer WAF to the carrier CAR for TEM observation. Twice
- ALTS Automate Transfer System
- the FIB-SEM device 101, the ALTS device 201, and the TEM device 102 can communicate with each other via the host control device 103.
- the semiconductor wafer WAF on which the thin film sample SAM is produced is conveyed to the ALTS device 201.
- the ALTS device 201 transfers the thin film sample SAM to the TEM observation carrier CAR in the device. At that time, the ALTS device 201 performs the transfer while referring to the position information of the thin film sample SAM on the semiconductor wafer WAF.
- the semiconductor wafer WAF may be transported to the ALTS device 201 for each container or cartridge described above. Further, as described above, the semiconductor wafer WAF and the TEM observation carrier CAR may be partially or wholly handled by a human or a transport robot.
- the upper control device is described as an independent component, but the FIB-SEM device 101, the TEM device 102, and the ALTS device 201 are responsible for some or all of the functions of the upper control device 103. May be good.
- FIG. 3 is a schematic configuration diagram showing an example of the FIB-SEM device according to the first embodiment of the present invention.
- the FIB-SEM apparatus 101 includes an ion beam column 301a, an ion beam column controller 331 for controlling the ion beam column 301a, an electron beam column 302a, and an electron beam column controller for controlling the electron beam column 302a.
- a wafer stage 304 on which a semiconductor wafer WAF can be placed, and a wafer stage controller 334 for controlling the wafer stage 304 are provided.
- the FIB-SEM apparatus 101 includes a substage 306 on which the carrier CAR for TEM observation can be placed, a substage controller 336 that controls the substage 306, and a thin film sample SAM produced on the semiconductor wafer WAF. It includes a probe unit 312 for picking up, a probe unit controller 342 for controlling the probe unit 312, and a sample chamber 307.
- the FIB-SEM apparatus 101 is a charged particle detector 309 for detecting charged particles generated when the ion beam 301b or the electron beam 302b is irradiated on the thin film sample SAM on the semiconductor wafer WAF or the carrier CAR for TEM observation.
- 310 detector controller 339 that controls the charged particle detector 309, detector controller 340 that controls the charged particle detector 310, X-ray detector 311 and X-ray detector control that controls the X-ray detector 311.
- the device 341 and the integrated computer 330 that controls the operation of the entire FIB-SEM device 101 are provided.
- the integrated computer 330 and each control can communicate with each other.
- the FIB-SEM device 101 controls the controller (keyboard, mouse, etc.) 351 and the FIB-SEM device 101 in which the operator inputs various instructions such as the irradiation conditions of the ion beam and the electron beam and the position of the wafer stage 304.
- the GUI screen 353 and the FIB-SEM device 101 are provided with one or more displays 352 and the like for displaying various acquired information including images.
- the state of the FIB-SEM device 101, the acquired information, and the like may be included in the GUI screen 353.
- the ion beam column 301a includes an ion source for generating an ion beam, a lens for focusing the ion beam, a deflection system for scanning and shifting the ion beam, a blanking deflection system for blanking the ion beam, and the like. It is a system that includes all the components necessary for FIB.
- the electron beam column 302a can be used as an SEM such as an electron source for generating an electron beam, a lens for focusing the electron beam, a deflection system for scanning and shifting the electron beam, and a blanking deflection system for blanking the electron beam. It is a system that includes all the necessary components.
- the ion beam column 301a and the electron beam column 302a are mounted in the sample chamber 307.
- the ion beam 301b that has passed through the ion beam column 301a and the electron beam 302b that has passed through the electron beam column 302a are mainly the intersections of the optical axis 301c of the ion beam column 301a and the optical axis 302c of the electron beam column 302a (cross point 371). ) Is focused.
- the ion beam 301b is not limited to the focused ion beam, and may be a broad ion beam provided with a mask.
- the ion beam column 301a is arranged vertically and the electron beam column 302a is arranged in an inclined manner, but the arrangement is not limited to this.
- the ion beam column 301a may be arranged in an inclined manner
- the electron beam column 302a may be arranged vertically.
- the ion beam column 301a and the electron beam column 302a may be arranged in an inclined manner.
- the FIB-SEM apparatus 101 may have a triple column configuration including a gallium focused ion beam column, an argon focused ion beam column, and an electron beam column.
- an observation system such as an optical microscope or an AFM with an FIB device instead of the electron beam column may be used instead of the FIB-SEM device 101.
- processing and observation may be performed using only the ion beam column. In this case, the number of columns that generate a beam can be reduced, and the equipment cost can be reduced.
- the wafer stage 304 and the substage 306 can move in a plane or rotate under the control of the corresponding wafer stage controller 334 and the substage controller 336. Further, the wafer stage 304 and the substage 306 move a predetermined position necessary for processing or observing the ion beam in the semiconductor wafer WAF or the thin film sample SAM to the ion beam irradiation position or the observation position by the electron beam.
- the probe unit 312 picks up the thin film sample SAM produced on the semiconductor wafer WAF.
- the probe unit 312 may use tweezers (not shown) instead of the probe. Further, the probe unit 312 may come into contact with the surface of the semiconductor wafer WAF to supply the potential to the semiconductor wafer.
- the detector controller 339, 340 is a functional block that arithmetically processes and images the detection signals output from the corresponding charged particle detectors 309 and 310, and is realized by the processor by executing a predetermined circuit or program. It is equipped with an arithmetic processing unit.
- the charged particle detectors 309 and 310 may be composed of a composite charged particle detector capable of detecting electrons and ions.
- a gas injection unit (not shown) or the like is mounted in the sample chamber 307. Further, the FIB-SEM device 101 has each controller (not shown) that controls the gas injection unit and the like.
- the gas injection unit stores depot gas for forming a deposit film on a semiconductor wafer WAF or a thin film sample SAM by irradiation with a charged particle beam, and is supplied into the sample chamber 307 from a nozzle tip (not shown) as needed.
- a protective film or marking can be produced at an arbitrary location on the semiconductor wafer WAF, the thin film sample SAM, or the TEM observation carrier CAR.
- an etching gas that is chemically corroded or carved by irradiation with a charged particle beam may be stored. This etching gas may be used for processing the semiconductor wafer WAF.
- the sample chamber 307 may be equipped with a cold trap, an optical microscope, or the like. Further, in the sample chamber 307, a detector such as a tertiary electron detector, a STEM detector, a backscattered electron detector, a low energy loss electron detector, or the like may be provided in addition to the charged particle detector 309. Further, the sample chamber 307 may be equipped with a mass spectrometer or the like in addition to the X-ray detector 311.
- FIG. 4 is a schematic configuration diagram showing an example of the ALTS device of FIG.
- the ALTS apparatus 201 controls the first optical microscope controller 431, the second optical microscope 402a, and the second optical microscope 402a for controlling the first optical microscope 401a and the first optical microscope 401a.
- a second optical microscope controller 432 for this purpose, a wafer stage 404 on which a semiconductor wafer WAF can be placed, and a wafer stage controller 434 for controlling the wafer stage 404 are provided.
- the ALTS device 201 picks up the substage 406 on which the carrier CAR for TEM observation can be placed, the substage controller 436 that controls the substage 406, and the thin film sample SAM produced on the semiconductor wafer WAF. It includes a probe unit 412, a probe unit controller 442 that controls the probe unit 412, and a sample chamber 407.
- the ALTS device 201 controls the first camera 410, the second camera 411, the first camera controller 440 that controls the first camera 410, and the second camera control that controls the second camera 411 for acquiring the optical microscope image. It includes a device 441, a light source 409 for irradiating the thin film sample SAM with light, a light source controller 439 for controlling the light source 409, and an integrated computer 430 for controlling the operation of the entire ALTS device 201.
- the integrated computer 430 and each control can communicate with each other.
- the ALTS device 201 is a controller (keyboard, mouse, etc.) 451 for which the operator inputs various instructions such as irradiation conditions and the position of the wafer stage 404, a GUI screen 453 for controlling the ALTS device 201, and a state of the ALTS device 201.
- One or more displays 452 that display various acquired information including images. The state of the ALTS device 201, the acquired information, and the like may be included in the GUI screen 453.
- the first optical microscope 401a and the second optical microscope 402a are systems that include all the components necessary for an optical microscope, such as a lens for forming an image and an aperture for limiting an aperture.
- the light source 409 is provided in the sample chamber 407, but the configuration is not limited to this.
- the light source 409 may be provided inside the optical microscope, for example, so that the thin film sample SAM is irradiated from above.
- the ALTS device 201 may be provided with a mechanism for scanning the focused light on the thin film sample SAM, and may be configured so that a scanned image can be acquired.
- the thin film sample SAM to be observed is mainly observed at a position (cross point 471) where the optical axis 401c of the first optical microscope 401a and the optical axis 402c of the second optical microscope 402a intersect. This makes it possible to grasp the three-dimensional positional relationship of the observation target. For example, it is possible to accurately grasp the positional relationship between the thin film sample SAM on the semiconductor wafer WAF and the probe unit 412 and tweezers (not shown).
- the sample chamber 407 is provided in FIG. 4, the sample chamber 407 can be omitted because a closed space is not required when observing in the atmosphere.
- the wafer stage 404 and the substage 406 can move in a plane or rotate under the control of the corresponding wafer stage controller 434 and the substage controller 436.
- the probe unit 412 may not only pick up the thin film sample SAM produced on the semiconductor wafer WAF, but may also have functions such as a contact detection sensor and a stress sensor on the wafer surface. Further, in order to pick up the thin film sample SAM, tweezers may be used instead of the probe.
- the first optical microscope 401a and the second optical microscope 402a are arranged in the sample chamber 407, but the type of microscope is not particularly limited for the purpose of observing the thin film sample SAM.
- SEM devices may be used for some or all microscopes.
- a configuration similar to that in FIG. 3 can be considered.
- a configuration is conceivable in which a second electron beam column is mounted in the sample chamber 307 instead of the ion beam column 301a of FIG.
- the electron source of the electron beam column used in the ALTS apparatus 201 may be any of a field emission type, a Schottky type, and a thermionic type.
- FIG. 5 is a schematic configuration diagram showing an example of the TEM device according to the first embodiment of the present invention.
- the TEM device 102 of FIG. 5 can be used in the TEM mode, and can also be used in the STEM mode by switching the mode.
- the TEM device 102 drives the electron beam column 501, the electron beam column controller 521 that controls the electron beam column 501, the sample holder 503 on which the TEM observation carrier CAR is mounted, and the sample holder 503.
- the sample holder stage 504 and the holder stage controller 524 for controlling the sample holder stage 504 are provided.
- the TEM device 102 includes a secondary electron detector 505 that detects electrons emitted from the thin film sample SAM, a detector controller 525 that controls the secondary electron detector 505, and a fluorescent plate 506 that projects a transmission electron microscope image.
- Camera 507 that images the fluorescent screen 506
- Camera controller 527 that controls the camera 507
- X-ray detector 508 that detects the X-rays emitted from the thin film sample SAM
- X-ray detector control that controls the X-ray detector 508.
- the device 528 and the integrated computer 530 that controls the operation of the entire TEM device 102 are provided.
- the integrated computer 530 and each control can communicate with each other.
- the TEM device 102 includes a controller (keyboard, mouse, etc.) 531 for inputting various instructions such as irradiation conditions and the position of the holder stage 504, a GUI screen 533 for controlling the TEM device 102, a state of the TEM device 102, and an image. It is provided with one or a plurality of displays 532 for displaying various acquired information including the above. The state of the TEM device 102, the acquired information, and the like may be included in the GUI screen 533.
- a controller keyboard, mouse, etc.
- GUI screen 533 for controlling the TEM device 102, a state of the TEM device 102, and an image. It is provided with one or a plurality of displays 532 for displaying various acquired information including the above.
- the state of the TEM device 102, the acquired information, and the like may be included in the GUI screen 533.
- FIG. 6 is a schematic configuration diagram showing an example of the electron beam column and its surroundings when used in the TEM mode.
- the electron beam column 501 passes through the electron source 601 for generating the electron beam, the irradiation lens group 602 for irradiating the thin film sample SAM with the electron beam, the objective lens 603, and the thin film sample SAM. It is provided with a projection lens group 604 and the like for projecting an electron beam of.
- an electron energy loss spectrometer (EELS) 609, an EELS detector 610, and the like are arranged below the electron beam column 501.
- EELS electron energy loss spectrometer
- the electron beam column 501 In this way, all the elements necessary for analysis using the TEM device 102 are mounted on the electron beam column 501 and its surroundings.
- the electron beam spreads over the entire observation region on the thin film sample SAM and is irradiated, and the sample information is acquired from the projected image, the interference image, the diffraction pattern, and the like.
- FIG. 7 is a schematic configuration diagram showing an example of the electron beam column and its surroundings when used in the STEM mode.
- the STEM mode electron beam column 501 has the main elements of FIG. 6, a deflection system 605 for scanning and shifting the electron beam, and an aperture 611 for controlling the opening angle of the electron beam. Is added.
- an annular detector 606 for detecting transmitted electrons scattered at a wide angle and a transmission electron detector 607 for detecting electrons transmitted through the thin film sample SAM are provided.
- the electron beam is focused on the thin film sample SAM, and the sample information is acquired by scanning the observation area.
- a cold trap may be arranged in the vicinity of the thin film sample SAM, or the sample holder 503 may be provided with a cooling mechanism, a heating mechanism, a gas introduction mechanism, or the like.
- the upper control device 103 includes a memory 103a, a position detection unit 103b for detecting the position of a thin film processing region in which the thin film sample SAM is produced, a thickness detection unit 103c for detecting the thickness of the thin film sample SAM, and a thin film. It is provided with a damage amount detection unit 103d and a FIB control unit 103e for detecting the damage amount due to the preparation of the sample SAM.
- the memory 103a is a storage device composed of a non-volatile memory, a hard disk, or the like.
- the memory 103a stores the FIB processing conditions corresponding to the IDs assigned to the semiconductor wafer WAF and the TEM observation carrier CAR described later.
- the FIB processing conditions include, for example, the acceleration voltage of the ion beam, the beam current, the processing region on the semiconductor wafer WAF, the processing order, and the like.
- the TEM observation conditions corresponding to each ID are stored in the memory 103a.
- the TEM observation conditions include a plurality of items.
- the TEM observation conditions include, for example, an observation mode (TEM image observation, diffraction pattern observation, energy dispersive X-ray analysis (EDX analysis), electron energy loss spectroscopy analysis (EELS analysis), etc.), TEM magnification, and the like.
- the camera length, probe current amount (the size of the aperture diameter of the irradiation system), etc. are included.
- the STEM observation conditions include, for example, the observation magnification, the probe diameter (reduction rate of the optical system), the irradiation angle of the sample, and the selection of the detector (transmission electron detector, annular detector, two). Secondary electron detector, etc.), the capture angle of the detector, etc. are included.
- the position detection unit 103b, the thickness detection unit 103c, the damage amount detection unit 103d, and the FIB control unit 103e may be configured by hardware, may be realized on the processor by executing software, or may be realized by hardware. And software may be combined and configured.
- FIG. 8 is a conceptual diagram of a thin film sample produced on a semiconductor wafer.
- the FIB-SEM apparatus 101 one or a plurality of thin film sample SAMs are produced on the semiconductor wafer WAF.
- the thin film sample SAM is connected to the semiconductor wafer WAF by one support portion 803, but the number of support portions 803 may be two or more.
- the support portion 803 is cut from the semiconductor wafer WAF.
- the support portion 803 may be cut by FIB or by cutting with tweezers or the like.
- the TEM observation area 804 is further sliced than the surroundings, but it does not necessarily have to be thinner than the surroundings as long as the thickness allows TEM observation.
- the size of the semiconductor wafer WAF is generally 100 mm to 300 mm
- the size of the thin film sample SAM is several ⁇ m to several tens of ⁇ m
- the thickness of the thin film sample SAM is several ⁇ m
- the thickness of the TEM observation region 804 is several nm to several tens of nm.
- FIG. 9 is a schematic view of a thin film sample mounted on a TEM observation carrier.
- FIG. 9A shows an example when the thin film sample SAM is supported by the TEM observation carrier CARa (CAR) having pillars 911.
- the thin film sample SAM and the pillar 911 are fixed by using, for example, a deposition gas.
- FIG. 9A shows a case where one thin film sample SAM is supported by one pillar 911, but a plurality of thin film sample SAMs may be supported by one pillar 911.
- FIG. 9B shows an example when the thin film sample SAM is gripped by the TEM observation carrier CARb (CAR) having a clip shape.
- CAR TEM observation carrier
- both ends of the thin film sample SAM are gripped by clips 912 composed of a plurality of pillars, but the thin film sample SAM may be gripped only by one end. Further, the clip 912 may grip a plurality of thin film sample SAMs stacked in the vertical direction.
- FIG. 9C shows an example when the thin film sample SAM is supported by the TEM observation carrier CARc configured in a grid pattern.
- a film such as a carbon film or a polymer film having a lamellar structure is stretched on the carrier CARc for TEM observation, and one or more thin film sample SAMs are supported on the film.
- This film does not have to be a uniform film, and may be a film having a large number of pores. Further, a plurality of thin film samples may be supported in one lattice.
- FIG. 10 is a flow chart showing an example of the semiconductor analysis method according to the first embodiment of the present invention. In FIG. 10, each process is shown corresponding to the FIB-SEM device 101, the host control device 103, and the TEM device 102.
- the semiconductor analysis process is started by sending an instruction from the upper control device 103 to the FIB-SEM device 101 and the TEM device 102.
- the semiconductor analysis process is started, first, the semiconductor wafer WAF and the TEM observation carrier CAR are conveyed into the FIB-SEM apparatus 101 (step S1001).
- the FIB-SEM apparatus 101 reads the ID of the conveyed semiconductor wafer WAF and the ID of the TEM observation carrier CAR (step S1002). These IDs are composed of, for example, a barcode or a two-dimensional code. These IDs are formed on a part of the semiconductor wafer WAF or the TEM observation carrier CAR by laser processing or the like. Then, the FIB-SEM device 101 inquires the upper control device 103 about the corresponding FIB processing conditions by outputting the read ID (step S1003).
- the host control device 103 reads the FIB processing conditions from the memory 103a based on the ID output from the FIB-SEM device 101 (step S1004), and outputs the read FIB processing conditions to the FIB-SEM device 101 (step S1005). ..
- the FIB-SEM device 101 sets the thin film sample preparation conditions based on the FIB processing conditions output from the upper control device (step S1006), and prepares the thin film sample SAM according to the set thin film sample preparation conditions (step S1007).
- the FIB-SEM apparatus 101 picks up the thin film sample SAM and conveys it to the TEM observation carrier CAR (step S1008).
- the probe unit 312 may be used, or tweezers may be used.
- the carrier CAR for TEM observation is taken out from the FIB-SEM device 101 (step S1009).
- the carrier CAR for TEM observation may be taken out in a state of being stored in a special case in the FIB-SEM device 101, or may be taken out in a state of being placed on a cartridge that can be attached to the TEM device 102. ..
- the TEM observation carrier CAR taken out from the FIB-SEM device 101 is conveyed to the TEM device 102 (step S1010).
- the carrier CAR for TEM observation may be carried by a human or a robot in part or in whole.
- the TEM device 102 reads the ID of the transported TEM observation carrier CAR (step S1011). Then, the TEM device 102 inquires the upper control device 103 of the corresponding TEM observation condition by outputting the read ID (step S1012).
- the host control device 103 reads the TEM observation condition from the memory 103a based on the ID output from the TEM device 102 (step S1013), and outputs the read TEM observation condition to the TEM device 102 (step S1014).
- the TEM device 102 sets the observation conditions for the thin film sample SAM based on the TEM observation conditions output from the host control device 103 (step S1015), and moves the TEM observation carrier CAR to a predetermined observation position (step S1016). .. Then, the TEM device 102 observes the thin film sample SAM under the set observation conditions (step S1017). In addition, step S1015 and step S1016 may change the order of processing, or may be executed in parallel.
- the TEM device 102 outputs the observation result of the thin film sample SAM to the host control device 103 (step S1018).
- the observation results include TEM images, detection data in each detector, and the like.
- the upper control device 103 evaluates the thin film sample SAM based on the observation result output from the TEM device 102 (step S1019).
- the evaluation items for the thin film sample SAM include, for example, the amount of displacement of the thin film processing region, the amount of thickness deviation of the film thickness, the amount of damage due to FIB processing, and the like.
- CAD data or three-dimensional reconstruction data of the observation area is prepared, and the shape of the thin film sample SAM at multiple points in the observation area is referred to based on the CAD data or the three-dimensional reconstruction data. It is prepared in advance as an image.
- the three-dimensional reconstruction data may be created by using an electron beam tomography method of a TEM image, or may be created by repeating FIB processing and SEM observation.
- the position detection unit 103b of the upper control device 103 matches the TEM image or STEM image (observation result) output from the TEM device 102 with each of the plurality of reference images, and identifies the reference image having the highest correlation value. By doing so, the position of the thin film processing region (the position where the thin film sample SAM is produced) is detected.
- the image matching algorithm may be a method of emphasizing edges, a method of extracting feature points, or a method of using shape information. Then, the position detection unit 103b compares the detection position of the thin film processing region with the set position of the thin film processing region, and calculates the amount of misalignment of the thin film processing region as an evaluation result.
- the thickness deviation of the film thickness of the thin film sample SAM will be described.
- the thickness of the thin film sample SAM is thick, the structure existing behind the structure to be observed also appears in the TEM image or the STEM image at the same time, so that the thickness detection unit 103c of the upper control device 103 outputs from the TEM device 102.
- the film thickness of the thin film sample SAM can be calculated by counting the number of structures in the TEM image or STEM image. Although it is assumed that the structures overlap, such overlap is eliminated by inclining the thin film sample SAM, and the film thickness of the thin film sample SAM can be detected.
- the thickness detection unit 103c can detect the film thickness of the thin film sample SAM by calculating the signal intensity of the HAADF-STEM image.
- the relationship between the film thickness and the signal strength is measured or calculated in advance, and the film thickness-signal strength information relating the film thickness and the signal strength is stored in the memory 103a as a table or a function. Then, the thickness detection unit 103c detects the film thickness of the thin film sample SAM corresponding to the calculated signal intensity based on the film thickness-signal intensity information. Then, the thickness detection unit 103c compares the detected film thickness of the thin film sample SAM with the set film thickness, and calculates the thickness deviation amount of the film thickness as an evaluation result.
- the relationship between the strength of the circular pattern in the FFT pattern of the TEM image or the STEM image and the thickness of the damage layer is measured or calculated in advance, and the strength of the circular pattern and the thickness of the damage layer are determined.
- the related circular pattern strength-damage layer information is stored in the memory 103a as a table or a function. Further, the memory 103a stores the damage layer thickness-damage amount information relating the thickness of the damage layer and the damage amount.
- the damage amount detection unit 103d calculates the thickness of the damage layer from the calculated circular pattern strength based on the circular pattern strength-damage layer information. Then, the damage amount detection unit 103d calculates the damage amount from the calculated thickness of the damage layer based on the damage layer thickness-damage amount information.
- the memory 103a may store pattern strength-damage amount information that associates the strength of the circular pattern with the damage amount.
- the damage amount detection unit 103d can directly calculate the damage amount from the strength of the circular pattern based on the pattern strength-damage amount information.
- step S1020 the FIB processing conditions are updated based on the evaluation result in step S1019.
- FIG. 11 is a diagram illustrating a method of updating the FIB processing conditions.
- FIG. 11A is a diagram illustrating a method of updating FIB processing conditions based on the amount of misalignment of the thin film processing region.
- FIG. 11B is a diagram illustrating a method of updating FIB processing conditions based on the film thickness of the thin film sample.
- 11 (c) and 11 (d) are diagrams for explaining a method of updating the FIB processing conditions based on the amount of damage caused by the FIB processing.
- the FIB control unit 103e determines that it is not necessary to correct the position of the thin film processing region, and does not update the FIB processing conditions.
- the FIB control unit 103e determines that the position of the thin film processing region needs to be corrected, and updates the FIB processing conditions. ..
- the set thin film processing regions corresponding to the thin film processing regions ARE1 and ARE2 are ARE11 and ARE12, respectively.
- the FIB control unit 103e sets the thin film processing region ARE1 in the subsequent semiconductor wafer WAF.
- the FIB processing conditions are updated so that the thin film processing area becomes ARE11. That is, the position detection unit 103b updates the FIB processing conditions so as to shift the thin film processing region ARE1 by the calculated position deviation amount.
- the FIB control unit 103e determines, for example, when the misalignment amount of the thin film processing region ARE2 with respect to the set thin film processing region ARE12 is equal to or greater than the misalignment amount determination threshold value, the subsequent semiconductor.
- the FIB processing conditions are updated so that the thin film processing area ARE2 becomes the set thin film processing area ARE12.
- the FIB control unit 103e sets each thin film in the same direction as shown in FIG. 11A.
- the FIB processing conditions may be updated so as to shift the processing area, or the FIB processing conditions may be updated so as to shift the thin film processing areas in different directions.
- the shift amount of all thin film processing areas may be the same.
- the average value of the displacement amount of all the thin film processing regions may be calculated by the position detection unit 103b or the FIB control unit 103e, and this average value may be used as the shift amount, or the maximum displacement amount of all the thin film processing regions may be obtained.
- the value or the minimum value may be the shift amount.
- FIG. 11A only two thin film processing regions ARE1 and ARE2 are shown, but the number of processing regions is not particularly limited.
- the FIB control unit 103e determines that it is not necessary to correct the film thickness of the thin film sample SAM. , The FIB processing conditions are not updated.
- the FIB control unit 103e determines that the film thickness of the thin film sample SAM needs to be corrected, and updates the FIB processing conditions. I do.
- the thin film processing regions ARE3 and ARE4 are displaced outward from the set thin film processing regions ARE13 and ARE14. Therefore, the thickness deviation amount of the film thickness of the thin film sample SAM calculated by the thickness detection unit 103c is equal to or larger than the thickness deviation amount determination threshold value.
- the FIB control unit 103e updates the FIB processing conditions so that the thin film processing regions are shifted so that the two thin film processing regions ARE3 and ARE4 are close to each other.
- the shift amount of each of the thin film processing regions ARE3 and ARE4 may be, for example, half of the calculated thickness deviation amount.
- the FIB control unit 103e causes the two thin film processing regions ARE3 and ARE4 to move away from each other.
- the FIB processing conditions may be updated.
- the shift amount of the thin film processing regions ARE3 and ARE4 may be set to half each of the calculated thickness deviation amount, for example.
- FIG. 11B only two thin film processing regions ARE3 and ARE4 are shown, but the number of processing regions is not particularly limited.
- the FIB control unit 103e determines that it is not necessary to update the FIB processing conditions.
- the damage amount is equal to or greater than the damage amount determination threshold value
- the FIB control unit 103e determines that it is necessary to correct the position of the thin film processing region, and updates the FIB processing conditions.
- the FIB control unit 103e sets the finish processing region for the thin film sample SAM to ARE5 and ARE6 as shown in FIG. 11C, and lowers the acceleration voltage for these finish processing regions ARE5 and ARE6. Update the processing conditions.
- the FIB control unit 103e thins the thin film processing regions ARE7 and ARE8 so that the two thin film processing regions ARE7 and ARE8 before the finishing process are separated by a preset distance.
- the FIB processing conditions are changed so as to shift to the processing areas ARE17 and ARE18.
- the FIB control unit 103e changes the FIB processing conditions so that the finish processing is performed at a low acceleration voltage as shown in FIG. 11 (c).
- the finishing processing region corresponding to the low acceleration voltage may be set to cover, for example, the thin film processing regions ARE17 and ARE18, or at least to cover the front surface and the back surface of the thin film sample SAM.
- the amount of machining damage can be reduced by increasing the area to be finished with a low acceleration voltage. Although only two processing regions are shown in FIGS. 11C and 11D, the number of processing regions is not particularly limited.
- the upper control device 103 rewrites the FIB processing conditions stored in the memory 103a to the updated FIB processing conditions. Further, the host control device 103 outputs the updated FIB processing conditions to the FIB-SEM device 101. The FIB-SEM device 101 changes the FIB processing conditions to the FIB processing conditions output from the host control device 103.
- the ALTS apparatus 201 described with reference to FIGS. 2 and 4 is used to transfer the thin film sample SAM from the semiconductor wafer WAF to the TEM observation carrier CAR and to observe the thin film sample SAM. May be good.
- the upper control device 103 can update the FIB processing conditions based on the observation results of the ALTS device 201 and the TEM device 102.
- the upper control device 103 evaluates the thin film sample SAM based on the TEM image, and updates the processing conditions based on the evaluation result of the thin film sample SAM.
- the observation result of the thin film sample SAM by the TEM device 102 can be fed back to the FIB-SEM device 101 to change the FIB processing conditions, so that the accuracy of automatic thin film sample preparation in the subsequent semiconductor wafer WAF can be improved.
- the production position of the thin film sample it takes time to search the TEM observation area and the automatic observation is not completed within the target time, or the observation target itself is lost.
- the automatic observation sometimes failed due to the damage.
- the same misalignment occurs in the thin film samples prepared on the same semiconductor wafer.
- the amount of misalignment obtained in the preceding thin film sample is fed back to the FIB processing of the subsequent thin film sample, so that the search time for the observation area can be shortened and the observation target can be normally thinned for automatic observation. Can improve the success rate of.
- the host control device 103 detects the position of the thin film processing region in the thin film sample SAM from the TEM image, compares the detection position of the thin film processing region with the set position of the thin film processing region, and compares the position of the thin film processing region with the set position of the thin film processing region.
- the amount of misalignment of the detection position with respect to the set position is calculated as the evaluation result of the thin film sample. According to this configuration, it is possible to modify the machining area based on the evaluation result.
- the upper control device 103 updates the machining conditions when the misalignment amount of the thin film processing region is equal to or larger than the misalignment amount determination threshold value. According to this configuration, the number of updates of the FIB processing conditions can be reduced.
- the host control device 103 detects the film thickness of the thin film sample SAM from the TEM image, compares the detected film thickness of the thin film sample SAM with the set film thickness, and detects the set film thickness.
- the amount of thickness deviation of the film thickness is calculated as an evaluation result. According to this configuration, it is possible to correct the processing area and thus the film thickness based on the evaluation result.
- the upper control device 103 updates the processing conditions when the thickness deviation amount of the detected film thickness is equal to or more than the thickness deviation amount determination threshold value. According to this configuration, the number of updates of the FIB processing conditions can be reduced.
- the host control device 103 calculates the amount of damage to the thin film sample SAM due to processing from the TEM image as an evaluation result. According to this configuration, it is possible to correct the acceleration voltage based on the evaluation result.
- the upper control device 103 updates the processing conditions when the damage amount of the thin film sample SAM is equal to or more than the damage amount determination threshold value. For example, the host controller 103 updates the machining conditions so as to lower the acceleration voltage. According to this configuration, the number of updates of the FIB processing conditions can be reduced.
- the TEM device 102 acquires a STEM image. According to this configuration, an image that cannot be acquired by a TEM image can be acquired, and a more accurate evaluation of the thin film sample SAM becomes possible.
- the end point detection is performed using the SEM image, but it is determined whether or not the processing end point detection was successful after the FIB thin film processing due to the miniaturization of the device until the actual observation using the TEM device. It's difficult. Therefore, in the present embodiment, the quality of the thin film sample is judged using the TEM image, and the TEM image (or STEM image) is made to correspond with the SEM image at the processing end point and learned by the learning device to learn the processing end point. Improve detection accuracy.
- FIG. 12 is a diagram illustrating a semiconductor analysis system according to the second embodiment of the present invention.
- the host control device 103 of the present embodiment includes a determination device 1201, a learning device 1202, and a machining control unit 1203 in addition to the configuration shown in FIG.
- the determination device 1201 determines whether or not the processing end point of the FIB processing for the thin film sample SAM is good or bad (first good or bad) based on the TEM image (STEM image) after the FIB processing (that is, after the thin film sample SAM is prepared) output from the TEM device 102. It is a functional block that performs (judgment processing). As shown in FIG. 12, the determination device 1201 learns the pass / fail judgment result (first pass / fail judgment result) of the processing end point detection for each thin film sample SAM based on the TEM image (STEM image) of each thin film sample SAM. Output to 1202.
- the determination device 1201 may be configured by hardware or software, or may be configured by combining hardware and software.
- the learning device 1202 is a functional block that generates a learning model for detecting the machining end point by comparing the pass / fail judgment result of the machining end point detection in the determination device 1201 with the SEM image in the FIB-SEM device 101.
- FIG. 12 illustrates learning using the input data up to the third thin film sample, but the number of input data is not limited to this.
- the learner may be configured by hardware or software, or may be configured by combining hardware and software. Further, the learner 1202 may be composed of, for example, AI (Artificial Intelligence). AI realizes machine learning using deep learning and the like.
- AI Artificial Intelligence
- the processing control unit 1203 is a functional block that performs processing related to FIB processing.
- the machining control unit 1203 may be included in, for example, a control unit (not shown) that controls the host control device 103, or may be provided separately from the control unit.
- FIG. 13 is a flow chart showing an example of a learning data updating method according to the second embodiment of the present invention. Also in FIG. 13, each process is shown corresponding to the FIB-SEM device 101, the host control device 103, and the TEM device 102.
- Steps S1001 to S1006 are the same as in FIG. After step S1006, step S1301 is executed. In step S1306, thin film processing (that is, thin film sample preparation) is performed according to the processing conditions set in step S1006.
- step S1302 the FIB-SEM device 101 acquires an SEM image of the region where the thin film processing is performed while performing the thin film processing in step S1301 (step S1302), and outputs the acquired SEM image to the upper control device 103. (Step S1303).
- step S1304 the machining control unit 1203 of the host control device 103 determines the machining end point based on the SEM image output from the FIB-SEM device 101.
- the determination of the processing end point is performed by matching the SEM image with the reference image prepared in advance. When these images do not match (NO), the processing control unit 1203 determines that the thin film processing is insufficient, and instructs the FIB-SEM device 101 to shift the processing position and continue the processing. Then, steps S1301 to S1303 are executed again.
- step S1304 when these images match (YES), the processing control unit 1203 determines that the thin film processing is sufficient and ends the thin film processing. Further, the machining control unit 1203 stores the SEM image at this time as a machining end point image in the memory 103a (step S1305). Further, the machining control unit 1203 outputs a machining end point image (SEM image) to the FIB-SEM device 101 (step S1306).
- SEM image machining end point image
- Steps S1008 to S1019 are the same as in FIG.
- the TEM device 102 outputs the TEM images (STEM images) of the plurality of thin film sample SAMs after the thin film processing to the host control device 103 as input data.
- the upper control device 103 evaluates the plurality of thin film sample SAMs based on the TEM image (STEM image).
- step S1307 is executed.
- step S1307 based on the evaluation results in the upper control device 103 and step S1019, the quality of the machining end point detection is determined for each TEM image, and the learning data is updated.
- the evaluation items in step S1019 are, for example, the position (positional deviation amount) of the thin film processing region, the thickness deviation amount of the film thickness of the thin film sample SAM, the damage amount due to the thin film processing, and the like.
- the determination device 1201 performs a pass / fail determination process (first pass / fail determination process) for detecting the processing end point for each thin film sample SAM using the TEM image output from the TEM device 102, and performs a pass / fail determination result (first pass / fail determination result). ) Is output to the learner 1202. Further, an SEM image corresponding to each TEM image is input to the learner 1202. However, since this SEM image is an SEM image that matches the reference image and is stored in the memory 103a, the learner 1202 needs an SEM image corresponding to the TEM image for which the pass / fail judgment is performed from the memory 103a. It may be read out accordingly.
- the learner 1202 associates the input TEM image with the SEM image, and associates the TEM image determined to have good machining end point detection with the SEM image, so that the machining end point can be detected successfully. Learn the state. On the other hand, the learner 1202 learns the state when the detection of the machining end point fails by associating the TEM image determined that the machining end point detection is not good with the SEM image. By repeating such learning, the learning device 1202 updates the learning model.
- FIG. 14 is a diagram illustrating a method for determining machining end point detection using a learning model. For convenience of explanation, FIG. 14 shows only the FIB-SEM device 101 and the host control device 103.
- the FIB-SEM device 101 When performing thin film processing (preparation of a thin film sample SAM), the FIB-SEM device 101 outputs an SEM image at the time of thin film processing to a learning device 1202 having a learning model.
- step S1304 the learning device 1202 uses the learning model to perform a processing end point detection pass / fail determination process (second pass / fail determination process) on the SEM image output from the FIB-SEM device 101. Then, the learner 1202 outputs the pass / fail determination result (second pass / fail determination result) of the machining end point detection for the thin film sample SAM based on the SEM image to the machining control unit 1203. Then, the machining control unit 1203 gives an instruction to the FIB-SEM device 101 to continue machining or end machining based on the result of determining whether the machining end point is detected.
- a processing end point detection pass / fail determination process second pass / fail determination process
- the machining control unit 1203 causes the FIB-SEM device 101 to continue the FIB machining.
- the pass / fail determination result is affirmative, the machining control unit 1203 causes the FIB-SEM device 101 to complete the FIB machining.
- the learning device 1202 performs a processing end point detection pass / fail determination process (second pass / fail determination process) on the thin film sample SAM based on the SEM image using the learning model, and the processing control unit 1203 learns. Based on the quality determination result of the machining end point detection in the device 1202, an instruction to continue machining or end machining is given to the machining apparatus.
- a processing end point detection pass / fail determination process second pass / fail determination process
- the present invention is not limited to the above-described embodiment, and includes various modifications. Further, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. ..
- each member and the relative size described in the drawings are simplified and idealized in order to explain the present invention in an easy-to-understand manner, and may have a more complicated shape in mounting.
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Abstract
Description
<半導体解析システムの構成>
図1は、本発明の実施の形態1に係る半導体解析システムの一例を示す概略構成図である。半導体解析システム100は、FIB-SEM装置(加工装置)101、TEM装置102、および上位制御装置103を含む。ここで、SEMとは走査型電子顕微鏡である。また、TEMとは透過型電子顕微鏡であり、後述するSTEMとは走査型透過電子顕微鏡である。
図3は、本発明の実施の形態1に係るFIB-SEM装置の一例を示す概略構成図である。図3に示すように、FIB-SEM装置101は、イオンビームカラム301a、イオンビームカラム301aを制御するイオンビームカラム制御器331、電子ビームカラム302a、電子ビームカラム302aを制御する電子ビームカラム制御器332、半導体ウエハWAFを載置することが可能なウエハステージ304、ウエハステージ304を制御するウエハステージ制御器334を備えている。
図4は、図2のALTS装置の一例を示す概略構成図である。図4に示すように、ALTS装置201は、第1光学顕微鏡401a、第1光学顕微鏡401aを制御するための第1光学顕微鏡制御器431、第2光学顕微鏡402a、第2光学顕微鏡402aを制御するための第2光学顕微鏡制御器432、半導体ウエハWAFを載置することが可能なウエハステージ404、ウエハステージ404を制御するウエハステージ制御器434を備えている。
図5は、本発明の実施の形態1に係るTEM装置の一例を示す概略構成図である。図5のTEM装置102は、TEMモードで使用することが可能であるし、モードを切り替えることによりSTEMモードで使用することも可能である。
上位制御装置103は、図1に示すように、メモリ103a、薄膜試料SAMを作製された薄膜加工領域の位置を検出する位置検出部103b、薄膜試料SAMの厚みを検出する厚み検出部103c、薄膜試料SAM作製によるダメージ量を検出するダメージ量検出部103d、FIB制御部103eを備えている。
図8は、半導体ウエハ上に作製された薄膜試料の概念図である。FIB-SEM装置101内において、半導体ウエハWAF上には1つ又は複数の薄膜試料SAMが作製される。本実施の形態では、薄膜試料SAMは、半導体ウエハWAFと1つの支持部803とで連結されているが、支持部803の個数は2つ以上でも構わない。
次に半導体解析システム100を用いた半導体解析方法について説明する。図10は、本発明の実施の形態1に係る半導体解析方法の一例を示すフロー図である。図10では、各工程がFIB-SEM装置101、上位制御装置103、TEM装置102と対応して示されている。
上位制御装置103は、TEM装置102から出力された観察結果に基づき薄膜試料SAMに対する評価を行う(ステップS1019)。以下、薄膜試料SAMに対する測定方法について詳しく説明する。薄膜試料SAMに対する評価項目には、例えば薄膜加工領域の位置ずれ量、膜厚の厚みずれ量、FIB加工によるダメージ量等が含まれる。
ステップS1020では、ステップS1019の評価結果に基づきFIB加工条件の更新を行う。図11は、FIB加工条件の更新方法を説明する図である。図11(a)は、薄膜加工領域の位置ずれ量に基づくFIB加工条件の更新方法を説明する図である。図11(b)は、薄膜試料の膜厚に基づくFIB加工条件の更新方法を説明する図である。図11(c)および図11(d)は、FIB加工によるダメージ量に基づくFIB加工条件の更新方法を説明する図である。
本実施の形態によれば、上位制御装置103は、TEM画像に基づく薄膜試料SAMに対する評価を行い、薄膜試料SAMの評価結果に基づいて加工条件を更新する。この構成によれば、TEM装置102による薄膜試料SAMの観察結果をFIB-SEM装置101へフィードバックしてFIB加工条件を変更することができるので、後続の半導体ウエハWAFにおける薄膜試料自動作製の精度向上および薄膜試料自動観察の精度を向上させることが可能となる。
次に、実施の形態2について説明する。なお、以下では、前述の実施の形態と重複する箇所については原則として説明を省略する。
図13は、本発明の実施の形態2に係る学習データの更新方法の一例を示すフロー図である。図13においても、各工程がFIB-SEM装置101、上位制御装置103、TEM装置102と対応して示されている。
図14は、学習モデルを用いた加工終点検知の判定方法を説明する図である。図14には、説明の便宜上、FIB-SEM装置101および上位制御装置103のみが示されている。
本実施の形態では、前述の実施の形態における効果に加え、以下の効果が得られる。本実施の形態によれば、学習器1202は、学習モデルを用いてSEM画像に基づく薄膜試料SAMに対する加工終点検知の良否判定処理(第2良否判定処理)を行い、加工制御部1203は、学習器1202における加工終点検知の良否判定結果に基づき、加工継続または加工終了の指示を前記加工装置に対して行う。
Claims (10)
- 半導体ウエハを加工して観察用の薄膜試料を作製する加工装置と、
前記薄膜試料の透過型電子顕微鏡像を取得する透過型電子顕微鏡装置と、
前記加工装置および前記透過型電子顕微鏡装置を制御する上位制御装置と、
を備え、
前記上位制御装置は、前記透過型電子顕微鏡像に基づく前記薄膜試料に対する評価を行い、前記薄膜試料の評価結果に基づいて加工条件を更新し、更新した加工条件を前記加工装置へ出力する、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記上位制御装置は、前記透過型電子顕微鏡像から前記薄膜試料における薄膜加工領域の位置を検出し、前記薄膜加工領域の検出位置と前記薄膜加工領域の設定位置とを比較し、前記設定位置に対する前記検出位置の位置ずれ量を前記薄膜試料の前記評価結果として算出する、
半導体解析システム。 - 請求項2に記載の半導体解析システムにおいて、
前記上位制御装置は、前記薄膜加工領域の前記位置ずれ量が位置ずれ量判定閾値以上である場合、前記加工条件を更新する、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記上位制御装置は、前記透過型電子顕微鏡像から前記薄膜試料の膜厚を検出し、前記薄膜試料の検出膜厚と設定膜厚とを比較し、前記設定膜厚に対する前記検出膜厚の厚みずれ量を評価結果として算出する、
半導体解析システム。 - 請求項4に記載の半導体解析システムにおいて、
前記上位制御装置は、前記検出膜厚の前記厚みずれ量が厚みずれ量判定閾値以上である場合、前記加工条件を更新する、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記上位制御装置は、前記透過型電子顕微鏡像から加工よる前記薄膜試料のダメージ量を前記評価結果として算出する、
半導体解析システム。 - 請求項6に記載の半導体解析システムにおいて、
前記上位制御装置は、前記薄膜試料の前記ダメージ量がダメージ量判定閾値以上である場合、前記加工条件を更新する、
半導体解析システム。 - 請求項7に記載の半導体解析システムにおいて、
前記上位制御装置は、加速電圧を低くするよう前記加工条件を更新する、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記加工装置は、走査型電子顕微鏡像を取得する走査型電子顕微鏡装置を備え、
前記上位制御装置は、前記透過型電子顕微鏡像に基づく前記薄膜試料に対する加工終点検知の第1良否判定処理を行う判定器と、前記判定器における前記加工終点検知の第1良否判定結果と前記走査型電子顕微鏡像とを対比することで前記加工終点検知を行うための学習モデルを生成する学習器と、加工制御部とを備え、
前記学習器は、前記学習モデルを用いて前記走査型電子顕微鏡像に基づく前記薄膜試料に対する前記加工終点検知の第2良否判定処理を行い、
前記加工制御部は、前記学習器における前記加工終点検知の第2良否判定結果に基づき、加工継続または加工終了の指示を前記加工装置に対して行う、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記透過型電子顕微鏡装置は、走査型透過電子顕微鏡像を前記透過型電子顕微鏡像として取得する、
半導体解析システム。
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