CN114788021A - Height adjusting method and chip transfer method for condensing lens, height adjusting device for condensing lens, and chip transfer device - Google Patents

Height adjusting method and chip transfer method for condensing lens, height adjusting device for condensing lens, and chip transfer device Download PDF

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CN114788021A
CN114788021A CN202080085634.5A CN202080085634A CN114788021A CN 114788021 A CN114788021 A CN 114788021A CN 202080085634 A CN202080085634 A CN 202080085634A CN 114788021 A CN114788021 A CN 114788021A
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transfer
chip
transfer substrate
laser
substrate
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水谷义人
新井义之
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Toray Engineering Co Ltd
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Toray Engineering Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

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Abstract

The invention provides a height adjusting method and a chip transfer method of a condensing lens, a height adjusting device of the condensing lens and a chip transfer device, which optimize laser intensity distribution in a processing surface as an interface of a chip component and a transfer substrate to obtain good transfer quality when transferring the chip component to the substrate of a transfer destination by a laser lift-off method. Specifically, in the height adjustment method and chip transfer method for a condenser lens, and the height adjustment device and chip transfer device for a condenser lens, a beam analyzer that has an upward light receiving surface and measures the intensity distribution of laser light is disposed below the transfer substrate, and the intensity distribution of laser light transmitted through the transfer substrate is measured at a position where the chip component is not disposed, thereby adjusting the height of the condenser lens.

Description

Height adjusting method and chip transfer method for condensing lens, height adjusting device for condensing lens, and chip transfer device
Technical Field
The present invention relates to a method for adjusting the height of an optical lens, a method for transferring a chip, a device for adjusting the height of a condensing lens, and a device for transferring a chip.
Background
Miniaturization of semiconductor chips due to the progress of microfabrication technology and miniaturization of LED chips due to the improvement of light emission efficiency of LEDs have been progressing. Therefore, a large number of chip components such as semiconductor chips and LED chips can be densely formed on 1 wafer substrate.
In recent years, there are uses: the diced chip components densely formed on the wafer substrate or the chip components transferred to the transfer substrate in a state of being arranged on the wafer substrate are rearranged on a transfer destination substrate such as a wiring substrate at a predetermined interval, and are mounted at high speed and with high accuracy. For example, in the manufacture of a micro LED display, which is attracting attention as an image display device, millions of LED chips need to be mounted at predetermined positions on a TFT substrate with intervals therebetween.
Here, each chip component arranged on a transfer substrate including a wafer substrate at a high density needs to be transferred with a high accuracy with an error of about several μm to ensure electrical connection between an electrode of the chip component and an electrode of a transfer destination substrate. And a large number of chip parts need to be transferred at high speed.
Various studies have been made on a process for transferring chip components at high speed and with high accuracy and mounting the chip components on a transfer destination substrate at predetermined intervals with high accuracy. Among them, many studies have been made on a laser lift-off method (hereinafter referred to as an LLO method) (for example, patent document 1).
Fig. 12 shows an example in which the chip components C are transferred from the transfer substrate 2 to the transfer destination substrate B by the LLO method. That is, the chip component C on the right end is irradiated with the laser light L and transferred to the transfer destination substrate B. Here, the chip component C on the right end is positioned above the predetermined position of the transfer destination substrate B. Here, the wavelength of the laser light L is selected from a range suitable for the chip component C to be peeled off from the transfer substrate 2. For example, if a wavelength that transmits through the transfer substrate 2 and is absorbed by the raw material of the chip component C is used, the chip component C is peeled off from the transfer substrate 2 by the gas generated by the decomposition of the raw material accompanying the temperature rise.
Fig. 13 shows a state where the right-hand chip component C peeled off from the transfer substrate 2 by irradiation of the laser light L is transferred to the transfer destination substrate B. Here, the chip component C on the right end is transferred directly downward, and is therefore disposed at a predetermined position on the transfer destination substrate B. Further, if the distance by which the chip component moves directly downward accompanying the transfer is made larger than the thickness of the chip component in advance, the transfer substrate 2 can be moved in the horizontal direction even if the chip component C is transferred onto the transfer destination substrate B.
Documents of the prior art
Patent literature
Patent document 1: japanese patent application laid-open No. 2010-161221
Disclosure of Invention
Problems to be solved by the invention
In order to transfer the chip component C from the transfer substrate 2 to the transfer destination substrate B by the LLO method, in addition to the wavelength of the laser light L, the intensity distribution of the laser light in the processing surface as the interface between the transfer substrate 2 and the chip component C is also important. Fig. 14 shows a cross-sectional view of a specific example of the relationship between the intensity distribution and the transfer quality in the processing surface of the laser beam L.
In fig. 14, an intensity distribution D (top hat distribution) is an intensity distribution of the laser light L (in the processing surface) that the chip component C is peeled off from the transfer substrate 2 and is reliably transferred to the transfer destination substrate B without receiving excessive energy. On the other hand, although the intensity distribution a is uniform, the intensity of the laser light L on the processed surface is weak as a whole, and the chip component C is not peeled off. In the intensity distribution B (gaussian distribution), even if a sufficient intensity of the laser light L is obtained at the center of the chip, the chip component C is not peeled off at the peripheral edge of the chip component C, and therefore, transfer failure occurs. In the intensity distribution C (M-shaped distribution, which is annular when viewed from the irradiation surface), the laser light L becomes excessive at the peripheral edge portion of the chip component C, and therefore, although the chip component C is peeled off from the transfer substrate 2, there is a possibility that peeling occurs from one corner of the chip component, which causes lateral shift at the time of transfer of the chip component C, and breakage of the corner portion of the chip component C.
Therefore, it is necessary to optimize the laser intensity distribution on the processing surface 2F by adjusting the height of the condensing lens 5 in fig. 12. Therefore, conventionally, the laser intensity distribution on the processing surface is adjusted by the method illustrated in fig. 15 (b). That is, the height position of the condenser lens 5 is determined so that the light intensity distribution on the light receiving surface 7F (as in the intensity distribution D of fig. 14) is optimized, while the intensity distribution of the laser light L at the height of the processing surface 2F shown in fig. 15 (a) is observed by the beam analyzer 7 having the light receiving surface 7F at the same height H2F as the processing surface 2F (in a state where the transfer substrate 2 is not present). Then, the LLO method is performed at the height position of the condenser lens 5 adjusted in this way.
However, even if the height of the condensing lens 5 is adjusted by the method shown in fig. 15 (b), a quality transfer defect may occur in the transfer of the chip component C by the LLO method. That is, the light intensity distribution on the processing surface in the state where the transfer substrate 2 is disposed may be inappropriate.
The present invention has been made in view of the above problems, and provides a height adjustment method for an optical lens and a chip transfer method, and a height adjustment device for a condenser lens and a chip transfer device, as follows: when chip components are transferred to a substrate at a transfer destination by a laser lift-off method, the laser intensity distribution in a processing surface which is an interface between the chip components and the transfer substrate is optimized, and good transfer quality is obtained.
Means for solving the problems
In order to solve the above-mentioned problems, the invention described in claim 1 is a height adjustment method of a condensing lens for optimizing an intensity distribution of laser light in a surface of a processing surface which is an interface between a chip component and a transfer substrate in which a plurality of chip components are arranged on a lower surface, by adjusting a height of a condensing lens which is arranged between a laser light source and the transfer substrate and is movable up and down, wherein a beam analyzer having an upward light receiving surface and measuring an intensity distribution of laser light is arranged below the transfer substrate, and the beam analyzer measures an intensity distribution of laser light transmitted through the transfer substrate at a position where the chip component is not arranged, the laser beam peeling transfer method irradiating the processing surface of the transfer substrate with laser light through the transfer substrate, and transferring the chip component to an upper surface of a transfer destination substrate opposed to the chip component, and adjusting the height of the condensing lens.
The invention described in claim 2 is based on the method of adjusting the height of the condensing lens described in claim 1, and is performed by bringing the light receiving surface into close contact with the lower surface of the transfer substrate.
In the invention described in claim 3, in the method of adjusting the height of a condenser lens described in claim 1, the light receiving surface is located below the lower surface of the transfer substrate.
The invention described in claim 4 is the height adjustment method for a condensing lens described in claim 3, wherein when the refractive index of the transfer substrate is known, the intensity distribution of the laser light on the lower surface of the transfer substrate is estimated from the intensity distribution of the laser light on the light receiving surface in accordance with the interval between the light receiving surface and the lower surface of the transfer substrate.
An invention described in claim 5 is a chip transfer method for selectively transferring a chip component to a transfer target substrate by irradiating a laser beam through a transfer substrate to the adhesive layer of the transfer substrate on which a plurality of chip components are arranged with the adhesive layer interposed therebetween, the chip transfer method comprising: preliminary irradiation of irradiating laser light having an intensity distribution of an annular high-intensity region to reduce the adhesive force of the adhesive layer in the vicinity of the outer periphery of the chip component; and a main irradiation step of irradiating the adhesive layer between the chip component and the transfer substrate subjected to the preliminary irradiation step with a laser beam having an intensity distribution of a top hat distribution or a gaussian distribution, and peeling the chip component from the transfer substrate and transferring the chip component to the transfer destination substrate.
The invention described in claim 6 is a height adjusting device for a condensing lens, which adjusts a height of a condensing lens that is vertically movable and is disposed between a laser light source and a transfer substrate having a plurality of chip components disposed on a lower surface thereof, in order to optimize an intensity distribution of laser light in a surface of a processing surface that is an interface between the chip components and the transfer substrate, in a chip transfer device that irradiates the processing surface of the transfer substrate with laser light through the transfer substrate, peels off the chip components, and transfers the chip components onto an upper surface of a transfer destination substrate that faces the chip components, the height adjusting device for the condensing lens including: a condensing lens driving unit that drives the condensing lens up and down; a beam analyzer which is disposed below the lower surface of the transfer substrate so as to have an upward light-receiving surface and measures the intensity distribution of the laser light; and a control unit connected to the condensing lens driving unit and the beam analyzer, wherein the control unit has a function of obtaining an intensity distribution of the laser beam on the light receiving surface while changing a height position of the condensing lens.
The invention described in claim 7 is a chip transfer apparatus which irradiates a processing surface, which is an interface between a plurality of chip components and a transfer substrate, of a transfer substrate having a lower surface on which the chip components are arranged with a laser beam from above through the transfer substrate, and peels off the chip components and transfers the chip components onto an upper surface of a transfer destination substrate facing the chip components, wherein the chip transfer apparatus includes a height adjustment device of a condensing lens described in claim 6.
The invention described in claim 8 is a chip transfer apparatus for selectively transferring a chip component to a transfer target substrate by irradiating a laser beam through a transfer substrate to the adhesive layer of the transfer substrate on which a plurality of chip components are arranged with the adhesive layer interposed therebetween, the chip transfer apparatus including: a laser oscillator having a wavelength capable of causing laser ablation in the adhesive layer; a condensing unit disposed between the laser oscillator and the transfer substrate, and condensing the laser light; and a beam shaper disposed between the condensing units of the laser oscillator, wherein the chip transfer device changes the state of the beam shaper, and can switch the intensity distribution of the laser beam irradiated to the adhesive layer to a shape having an annular high-intensity region and a gaussian shape or a top hat shape.
ADVANTAGEOUS EFFECTS OF INVENTION
By using the transfer substrate of the present invention, when a chip component is transferred to a substrate at a transfer destination by a laser lift-off method, a laser intensity distribution in a processing surface which is an interface between the chip component and the transfer substrate is optimized, and good transfer quality is obtained.
Drawings
Fig. 1 is a diagram showing a structure of a laser lift-off device in an embodiment of the present invention.
Fig. 2 is a diagram for explaining a method of adjusting the height of the condensing lens according to the embodiment of the present invention, (a) is a diagram showing a state in which the condensing surface is aligned with the lower surface of the transfer substrate, and (b) is a diagram showing a state in which the condensing surface is separated from the lower surface of the transfer substrate.
Fig. 3 is a diagram illustrating a method of adjusting the height of the condensing lens according to the embodiment of the present invention by separating the condensing surface from the lower surface of the transfer substrate.
Fig. 4 is a diagram illustrating a laser lift-off method, where (a) is a diagram illustrating a process of transferring a chip component from a transfer substrate to a transfer destination substrate, and (b) is a diagram illustrating a state where the chip component peeled off from the transfer substrate is transferred to the transfer destination substrate.
Fig. 5 is a diagram illustrating a case where a positional deviation occurs between the laser optical axis and the center of the chip component in the laser lift-off method, (a) is a diagram illustrating a process of transferring the chip component from the transfer substrate to the transfer destination substrate, and (b) is a diagram illustrating a state where the chip component is partially peeled off from the transfer substrate.
Fig. 6 is a diagram illustrating a configuration of a chip transfer apparatus according to a modification of the embodiment of the present invention.
Fig. 7 is a diagram illustrating preliminary irradiation with a laser beam according to a modification of the embodiment of the present invention, where (a) is a diagram showing a process of irradiating with a laser beam, and (b) is a diagram showing a change in the adhesive layer in the vicinity of the outer periphery of the chip component due to the preliminary irradiation.
Fig. 8 is a diagram illustrating main irradiation with a laser beam according to a modification of the embodiment of the present invention, where (a) is a diagram illustrating a process of irradiating the laser beam, and (b) is a diagram illustrating a state where a chip component peeled off from a transfer substrate is transferred to a transfer destination substrate.
Fig. 9 is a diagram illustrating the preliminary irradiation of the laser light in accordance with the in-plane shape of the chip in the modification of the embodiment of the present invention, (a) is a diagram illustrating the arrangement of chip components on the transfer substrate surface, (b) is a diagram illustrating the laser intensity distribution of the preliminary irradiation, (c) is a diagram illustrating the state of the adhesive layer after the preliminary irradiation and the laser intensity distribution at the chip component on which the preliminary irradiation is being performed, and (d) is a diagram illustrating a state in which the preliminary irradiation is sequentially performed on the chip components on the transfer substrate by scanning the preliminary irradiation position.
Fig. 10 is a diagram illustrating a state of an adhesive layer after preliminary irradiation, (a) is a diagram illustrating a laser intensity distribution of the preliminary irradiation performed on a chip component after the preliminary irradiation, (b) is a diagram illustrating a state of the chip component being peeled from a transfer substrate by the preliminary irradiation, and (d) is a diagram illustrating a state of sequentially scanning the preliminary irradiation position.
Fig. 11 is an example in which the beam shape of the laser beam is a square in the modification of the embodiment of the present invention, (a) is a diagram showing the laser intensity distribution of the preliminary irradiation, and (b) is a diagram showing the laser intensity distribution of the main irradiation performed on the chip component that has been preliminarily irradiated.
Fig. 12 is a view showing a state where the chip component is transferred from the transfer substrate to the transfer destination substrate by the laser lift-off method.
Fig. 13 is a view showing a state where the transfer substrate peeled from the transfer substrate is transferred to a transfer destination substrate by a laser lift-off method.
Fig. 14 is a diagram illustrating a relationship between an intensity distribution of laser light with respect to a chip component size and transfer quality in the laser lift-off method.
Fig. 15 is a diagram illustrating a conventional example of the height adjustment of the condensing lens, wherein (a) is a diagram showing a structure in which laser lift-off is performed, and (b) is a diagram showing a structure in which a laser intensity distribution at the same surface height as a processing surface in which laser lift-off is performed is observed by a beam analyzer.
Detailed Description
Embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a diagram illustrating a structure of a laser lift-off apparatus 1 as a chip transfer apparatus according to an embodiment of the present invention.
The laser lift-off apparatus 1 transfers the chip components C arranged on the transfer substrate 2 at high density to a predetermined position of the transfer destination substrate B. In fig. 1, the transfer substrate 2 has a structure in which an adhesive layer 21 is laminated on a base 20, but the present invention is not limited thereto, and may be a wafer substrate (without the adhesive layer 21).
The laser lift-off device 1 includes the following components: a stage 3, a laser light source 4, a condenser lens 5, a condenser lens driving unit 51, a transfer substrate holding unit 6, a beam analyzer 7, and a control unit 8. In the laser lift-off apparatus 1, the condenser lens driving unit 51, the beam analyzer 7, and the control unit 8 constitute a height adjustment device for the condenser lens.
The stage 3 has a function of holding the transfer destination substrate B, and preferably has a function of moving the transfer substrate B in the in-plane direction.
The laser light source 4 is a light source for irradiating a processing surface, which is the lower surface 2F of the transfer substrate 2 and is an interface with the chip component C, with a wavelength and energy necessary for laser lift-off, and the laser light source 4 is not limited to a laser oscillator, and a device including an optical system for guiding light emitted from the laser oscillator also corresponds to the laser light source 4.
The condensing lens 5 condenses the laser light L emitted from the laser light source 4, and moves up and down by the condensing lens driving unit 51, so that the height position with respect to the transfer substrate 2 can be adjusted, thereby changing the laser intensity distribution of the transfer substrate lower surface 2F.
The transfer substrate holding unit 6 holds the transfer substrate 2 by gripping the peripheral edge portion thereof, and preferably has a function of moving the transfer substrate 2 in the in-plane direction to perform alignment. Further, the transfer substrate 2 may have a function of adjusting the height in the vertical direction.
The beam analyzer 7 receives the laser light or the like, and observes the in-plane distribution of light intensity on the light receiving surface 7F. In the present embodiment, the light receiving surface 7F faces the laser light L upward. The height of the light receiving surface 7F may be adjusted.
The control unit 8 is connected to the condenser lens driving unit 51 and the beam analyzer 7. The control unit 8 is connected to the condensing lens driving unit 51, and has a function of controlling the height of the condensing lens 5. The control unit 8 is connected to the beam analyzer 7, and can acquire the light intensity distribution as a two-dimensional image at an arbitrary timing. The control unit 8 incorporates a storage means and an arithmetic means, and preferably has a function of associating the height information of the condenser lens 5 with the two-dimensional image of the light intensity distribution acquired by the beam analyzer 7.
Hereinafter, a method of adjusting the height of the condensing lens 5 by the laser lift-off device 1 shown in fig. 1 will be described with reference to fig. 1 to 3.
Fig. 2 (a) shows a state in which the position of the transfer substrate 2 where no chip component C is disposed directly below the condenser lens 5, and the light receiving surface 7F of the beam analyzer 7 is set to the same height as the transfer substrate lower surface 2F. If the laser light L is irradiated in this state, the beam analyzer 7 can observe the in-plane distribution of the laser light intensity of the transfer substrate lower surface 2F. That is, an image equivalent to the in-plane distribution of the laser intensity on the processing surface (where the chip component C is disposed) can be obtained. Therefore, the control unit 8 can know the height of the condenser lens 5 at which an appropriate intensity distribution can be obtained by observing the in-plane distribution of the laser intensity by the beam analyzer 7 while changing the height position of the condenser lens 5 by the condenser lens driving unit 51. Here, whether or not the intensity distribution is appropriate may be determined by observing the image of the beam analyzer 7 by a person, or may be automatically determined by the control unit 8 through an image analysis program.
However, as shown in fig. 2 (a), it is preferable that the height of the light receiving surface 7F of the beam analyzer 7 be adjustable in order to set the light receiving surface 7F to the same height as the transfer substrate lower surface 2F, but if the height of the light receiving surface 7F is excessively increased during the height adjustment process, the transfer substrate 2 is pushed up, and therefore, a difference in the in-plane distribution of the laser intensity from the processing surface in the LLO method is observed. In addition, in the case where the transfer substrate 2 includes the adhesive layer 21, there is a disadvantage that the light receiving surface 7F is in close contact with the transfer substrate lower surface 2F and is difficult to peel. Specifically, since a part of the adhesive layer 21 may adhere to the light receiving surface 7F, the in-plane distribution of the laser intensity on the lower surface 2F of the transfer substrate cannot be optimized any more frequently.
As described above, observation by the beam analyzer 7 in the state of fig. 2 (a) has an advantage that the in-plane distribution of the laser intensity at the height of the machined surface can be directly known, but on the contrary, there is a problem in workability and the like. Therefore, the state of fig. 2 (b) is a state in which workability is taken into consideration. Fig. 2 (b) is different from fig. 2 (a) in that the light receiving surface 7F of the light beam analyzer 7 is located at a height lower than the transfer substrate lower surface 2F. That is, the transfer substrate lower surface 2F is not in close contact with the light receiving surface 7F.
At the height of the light receiving surface 7F as shown in fig. 2 (b), the in-plane distribution of the laser intensity obtained by the beam analyzer 7 is not the in-plane distribution of the transfer substrate lower surface 2F, of course. However, if the refractive index of the transfer substrate 2 is known, it is understood that even if the light receiving surface 7F is separated from the transfer substrate lower surface 2F, the in-plane distribution of the laser intensity on the transfer substrate lower surface 2F can be estimated from the in-plane distribution of the laser intensity on the light receiving surface 7F according to the height of the light receiving surface 7F (the interval between the transfer substrate 2F and the light receiving surface 7F). Fig. 3 shows an example thereof. Fig. 3 shows an example in which the laser intensity distribution on the light receiving surface 7F becomes the beam profile B when the interval between the transfer substrate lower surface 2F and the light receiving surface 7F is set to a predetermined value and the laser intensity distribution on the transfer substrate lower surface 2F becomes the beam profile a. That is, in the example shown in fig. 3, the height of the condenser lens 5 is adjusted so that the laser intensity on the light receiving surface 7F becomes the intensity distribution B (gaussian distribution) shown in fig. 14, whereby good transfer quality is obtained by the LLO method (the laser intensity distribution on the transfer substrate lower surface 2F becomes the top hat distribution).
As a height adjustment device of the condensing lens, it is preferable that the relationship between the laser intensity distribution on the light receiving surface 7F and the laser intensity distribution on the lower surface 2F of the transfer substrate is databased according to the distance between the lower surface 2F of the transfer substrate and the light receiving surface 7F and is recorded in advance in the control unit 8 as shown in fig. 3. By making a database, the control unit 8 observes the in-plane distribution of the laser intensity on the light receiving surface 7F by the beam analyzer 7 while changing the height position of the condenser lens 5 by the condenser lens driving unit 51, and thereby can know the height of the condenser lens 5 that can obtain an appropriate intensity distribution on the transfer substrate lower surface 2F.
The database is not limited to the relationship between the laser intensity distribution on the light receiving surface 7F and the laser intensity distribution on the transfer substrate lower surface 2F. That is, the relationship between the actual laser intensity distribution on the light receiving surface 7F and the transfer state confirmed by the LLO method at this time may be databased according to the interval between the transfer substrate lower surface 2F and the light receiving surface 7F.
In this way, by providing the height adjusting device of the condensing lens of the present invention in the laser lift-off device, a laser lift-off device having excellent transfer quality can be obtained.
That is, as shown in fig. 4 (a), the laser beam transferred to the substrate lower surface 2F has a strength suitable for the LLO method in a range corresponding to the chip size of the chip component C, and can be transferred satisfactorily as shown in fig. 4 (b).
However, when laser light having an intensity distribution suitable for the chip size of the chip component C is irradiated as shown in fig. 4 (a), the laser light irradiation position needs to be accurately matched with the chip component C to be transferred. That is, when the optical axis LC of the laser light L is shifted from the center CC of the chip component C as shown in fig. 5 a, peeling occurs from the left side of the chip component C in a state where a portion with weak laser light intensity (the right side of the chip in the figure) is not peeled off, and therefore, the chip component C cannot be transferred in parallel to the transfer destination substrate B.
In order to avoid such a phenomenon, if the laser irradiation range of the intensity distribution D (top hat distribution) in fig. 14 is widened, the laser beam of appropriate intensity can be irradiated to the entire surface of each chip component C. However, in order to widen the laser irradiation range in this way, it is necessary to provide a high output to the laser light source 4, which leads to an increase in the size of the apparatus and an increase in the cost. Further, when the irradiation range of the laser light is wide, the chip component C adjacent to the chip component C to be transferred is also partially peeled, which is not preferable.
However, even when such a problem occurs, the modification can be made as an embodiment in which the feature that the laser intensity distribution of the transfer substrate lower surface 2F can be controlled is effectively utilized.
Fig. 6 is a diagram showing a schematic configuration of a laser lift-off apparatus 101 as a chip transfer apparatus according to a modification of the embodiment of the present invention.
The laser peeling apparatus 101 transfers the chip components C arranged at high density on the transfer substrate 2 to a predetermined position on the transfer destination substrate B. In fig. 6, the transfer substrate 2 has a structure in which an adhesive layer 21 is laminated on a base 20.
The laser lift-off apparatus 101 includes the following components: a stage 3, a laser light source 4, a condenser lens 5, a condenser lens driving unit 51, a transfer substrate holding unit 6, and a control unit 8.
The stage 3 has a function of holding the transfer destination substrate B, and preferably has a function of moving the transfer substrate B in the in-plane direction.
The laser light source 4 is a light source for irradiating a wavelength and energy that is absorbed by the adhesive layer 21 of the transfer substrate 2 to cure (decrease the adhesive force) or decompose the adhesive layer 21 to generate a gas. The laser light source 4 is not limited to a laser oscillator, and may include an optical system for guiding light emitted from the laser oscillator. The laser light source 4 may also function as a beam shaper. That is, a beam shaper in which the beam profile (in-plane intensity distribution) of the laser light is variable may be disposed between the laser oscillator and an optical system having a scanning function, such as a scanning galvanometer.
The condensing lens condenses the laser light L emitted from the laser light source 4, and if spherical aberration occurs, the height of the condensing lens is adjusted with respect to the adhesive layer 21 by the condensing lens driving unit 51, so that the laser intensity distribution in the surface of the adhesive layer 21 can be changed.
The transfer substrate holding unit 6 holds the transfer substrate 2 by gripping the peripheral edge portion thereof, and preferably holds a function of moving the transfer substrate 2 in the in-plane direction to perform alignment. Further, the transfer substrate 2 may have a function of adjusting the height in the vertical direction.
The control unit 8 is connected to the stage 3, the laser light source 4, the transfer substrate 6, and the condenser lens drive unit 51.
The control unit 8 is connected to the stage 3, and controls the position of the stage 3 so that the chip component C can be transferred to a predetermined position on the transfer destination substrate B.
The control unit 8 can control the irradiation timing of the laser light source 4 to irradiate the laser light L. In addition, when the laser light source 4 further includes an optical system such as a scanning galvanometer, scanning of the laser light L along the in-plane direction of the transfer substrate 2 can be controlled.
The control section 8 is connected to the transfer substrate holding unit 6 and can control the in-plane direction position of the transfer substrate 2.
The control unit 8 is connected to the condenser lens drive unit 51 and has a function of controlling the state of the condenser lens 5. With this function, the intensity distribution of the laser light irradiated to the adhesive layer 21 of the transfer substrate 2 can be changed. Therefore, as shown in the upper left of fig. 6, the intensity distribution of the laser light irradiated to the adhesive layer 21 can be switched between a distribution in which the intensity is high in the vicinity of the outer peripheral portion (high-intensity region is annularly formed in the outline) and a top hat distribution in which the intensity is high in the vicinity of the central portion, with respect to the size CW of the chip component C. The switching of the intensity distribution of the laser beam irradiated to the adhesive layer 21 is not limited to this, and for example, a gaussian distribution may be applied instead of the top hat distribution.
Next, a step of transferring a chip component arranged on a transfer substrate via an adhesive layer to a transfer destination substrate by the laser lift-off apparatus 1 shown in fig. 6 will be described with reference to fig. 7 and 8.
Fig. 7 is a diagram for explaining the following preliminary irradiation step: the chip component C is not peeled from the transfer substrate 2 by the laser peeling apparatus 1, but laser light is irradiated in order to reduce the adhesive force of the adhesive layer 21 (or peel the adhesive layer 21) in the vicinity of the outer periphery of the chip component C.
In addition, although the following description describes an example in which the condensing unit 5 is driven when switching the intensity distribution of the laser light irradiated to the adhesive layer 21 of the transfer substrate 2, if the laser light source 4 has a function of a beam shaper, the state of the beam shaper may be changed and the same switching may be performed.
In fig. 7 (a), the intensity distribution of the laser light irradiated to the adhesive layer 21 of the transfer substrate 2 is made high near the outer peripheral portion and weak at the central portion with respect to the size CW of the chip component C. By receiving the laser light having such an intensity distribution, the adhesive force of the adhesive layer 21 is maintained in the vicinity of the center of the chip component C, and becomes a low adhesive portion 21V in the vicinity of the outer peripheral portion as shown in fig. 7 (b). Here, the low adhesive portion 21V includes not only a state in which the adhesive force is reduced but also a state in which it is peeled off from the chip component C or the substrate 20.
After the preliminary irradiation with the laser light, as shown in fig. 7 (b), the adhesive layer 21 has a high adhesive force in the vicinity of the center of the chip component C, and therefore the chip component C is easily peeled off in the vicinity of the outer periphery of the chip component C while maintaining the state of being arranged on the transfer substrate 2.
Therefore, as shown in fig. 8 (a), the adhesive layer 21 is irradiated with laser light having a top hat distribution in a region slightly smaller than the chip component C, whereby the chip component C is easily peeled off from the transfer substrate 2, and transferred to the transfer destination substrate B while maintaining a parallel state (fig. 8 (B)). Here, even if the intensity of the laser light is not the top hat distribution but the gaussian distribution, there is a possibility that the chip component C is transferred to the transfer destination substrate B. Further, since the adhesive force of the adhesive layer 21 is weak near the outer periphery of the chip component C by the preliminary irradiation, even if the optical axis of the laser light is slightly shifted from the center of the chip component C during the main irradiation, the chip component C can be transferred to the transfer destination substrate B while maintaining the parallelism.
As described above, by combining the preliminary irradiation shown in fig. 7 (a) and the main irradiation shown in fig. 8 (a), the chip components arranged on the transfer substrate via the adhesive layer can be transferred to appropriate positions when the chip components are transferred to the transfer destination substrate. That is, transfer with excellent transfer quality can be achieved.
However, when a large number of chip components C arranged on the transfer substrate 2 are transferred onto the transfer destination substrate B, it is necessary to frequently switch the state of the light collecting unit 5 by the light collecting unit driving unit 51 for each chip component C to perform the preliminary irradiation and the main irradiation, and a time loss required for the switching is also generated in response to an increase in load on the light collecting unit driving unit 51.
Therefore, if the laser light can be scanned (in the in-plane direction of the transfer substrate 2) by an optical system such as a scanning galvanometer, it is preferable to perform preliminary irradiation at the positions of all the chip components C arranged on the transfer substrate 2 and then perform main irradiation at the positions of the respective chip components to transfer the chip components C onto the transfer destination substrate B.
Fig. 9 and 10 show this example, and the in-plane arrangement of the chip components C on the transfer substrate 2 is used for explanation.
First, fig. 9 (a) is a view showing chip components C arranged on the transfer substrate 2 via the adhesive 21, and fig. 9 (b) shows a state where preliminary irradiation is performed around the chip component C on the upper right of the arrangement. In fig. 9 (b), the preliminary irradiation portion LP21P indicates a region having a high preliminary irradiation in-plane intensity, and a low adhesion portion 21V is generated in the vicinity of the outer peripheral portion of the chip component C by the preliminary irradiation (fig. 9 (C)). Fig. 9 (C) shows a state where the low adhesion portion is formed by preliminary irradiation and preliminary irradiation is performed with the adjacent chip components C as the center. That is, instead of performing main irradiation on the chip components C on which the low adhesion portions 21V are generated by the preliminary irradiation immediately after the main irradiation, the preliminary irradiation is performed on the transfer substrate 2 in sequence according to the arrangement of the chip components C ((d) of fig. 9).
Fig. 10 (a) illustrates a state in which the preliminary irradiation according to the arrangement position of the chip component C as the transfer target (excluding the defective product and the like) of the transfer substrate B is completed in this manner. In fig. 10 (a), the low adhesion portions 21V are formed in the adhesive layer 21 in the vicinity of the outer peripheral portion of the chip component C, depending on the arrangement position of each of the chip components C arranged on the transfer substrate 2.
The state of fig. 10 (a) is a state in which each chip component C is attached to the transfer substrate 2 by the adhesive layer 21 maintaining the adhesive force in the vicinity of the center, and the adhesive layer 21 in the vicinity of the outer peripheral portion becomes a low adhesive portion 21V by preliminary irradiation.
Therefore, even if the light intensity near the outer periphery of the chip component C is low during main irradiation, the chip component C can be peeled off. That is, by providing the main irradiation section LP21L having a high light intensity near the center of the chip component C as shown in fig. 10 (B), the vicinity of the center of the chip component C also becomes the low adhesion section 21V as shown in fig. 10 (C), and the chip component C is peeled off and transferred to the transfer destination substrate B. Thereafter, (the adhesive layer 21 of) the chip components C disposed on the transfer substrate 2 are subjected to main irradiation as shown in fig. 10 (d), and the chip components C are sequentially transferred to predetermined positions on the transfer destination substrate B.
The shape of the laser beam irradiation surface is circular in fig. 9 and 10, but is not limited thereto. If the beam shaper has a function of changing the shape of the irradiation surface, it may be formed in a quadrangular shape or the like conforming to the shape of the chip as shown in fig. 11.
However, in the apparatus configuration of fig. 1, the height adjustment of the condensing lens is required to optimize the laser intensity distribution of the processing surface, but when the laser optical system includes a beam shaper as in the apparatus of fig. 6, the laser intensity distribution of the processing surface can be optimized by the function of the beam shaper.
Description of reference numerals 1 laser lift-off device (chip transfer device) 2 transfer substrate 2F transfer substrate lower surface (processed surface)
3 carrying platform
4 laser light source
5 condensing lens
6 transfer substrate holding unit 7 light beam analyzer
7F light receiving surface
8 control part
20 base
21 adhesive layer
51 condenser lens driving part B transfer destination substrate C chip component
CW chip size
H2F transfer substrate lower surface height Llaser

Claims (8)

1. A height adjustment method of a condensing lens, in a laser lift-off transfer method of adjusting a height of a condensing lens which is vertically movable and is disposed between a laser light source and a transfer substrate having a plurality of chip components disposed on a lower surface thereof, thereby optimizing an intensity distribution of laser light in a surface of a processing surface which is an interface between the chip components and the transfer substrate, the laser lift-off transfer method irradiating the processing surface of the transfer substrate with laser light through the transfer substrate, and peeling off and transferring the chip components onto an upper surface of a transfer destination substrate opposed to the chip components,
a beam analyzer having an upward light receiving surface and measuring an intensity distribution of the laser beam is disposed below the transfer substrate,
the intensity distribution of the laser light transmitted through the transfer substrate is measured at a position where the chip component is not disposed, and the height of the condensing lens is adjusted.
2. The height adjustment method of a condenser lens according to claim 1,
the height adjustment method of the condensing lens is performed by closely adhering the light receiving surface to the lower surface of the transfer substrate.
3. The height adjustment method of a condenser lens according to claim 1,
the light receiving surface is located below a lower surface of the transfer substrate.
4. The height adjustment method of a condenser lens according to claim 3,
in the case where the refractive index of the transfer substrate is known,
estimating an intensity distribution of the laser light on the lower surface of the transfer substrate from the intensity distribution of the laser light on the light receiving surface in accordance with an interval between the light receiving surface and the lower surface of the transfer substrate.
5. A chip transfer method for selectively transferring a chip component to a transfer target substrate by irradiating a laser beam through a transfer substrate to the adhesive layer of the transfer substrate on which a plurality of chip components are arranged with the adhesive layer interposed therebetween, the chip transfer method comprising:
preliminary irradiation of irradiating laser light having an intensity distribution of an annular high-intensity region so as to lower the adhesive force of the adhesive layer in the vicinity of the outer peripheral portion of the chip component; and
and a main irradiation step of irradiating the adhesive layer between the chip component and the transfer substrate, which has undergone the preliminary irradiation step, with a laser beam having an intensity distribution such as a top hat distribution or a gaussian distribution, thereby peeling the chip component from the transfer substrate and transferring the chip component to the transfer destination substrate.
6. A height adjusting device of a condensing lens, in a chip transfer device, for adjusting the height of the condensing lens which is arranged between a laser source and a transfer substrate with a plurality of chip components arranged on the lower surface and can move up and down, thereby optimizing the intensity distribution of laser in the surface of a processing surface of an interface between the chip components and the transfer substrate, wherein the chip transfer device irradiates the processing surface of the transfer substrate with laser through the transfer substrate, peels off the chip components and transfers the chip components to the upper surface of a transfer destination substrate opposite to the chip components,
the height adjustment device for a condensing lens includes:
a condensing lens driving unit that drives the condensing lens up and down;
a beam analyzer which is disposed below the lower surface of the transfer substrate so as to have an upward light-receiving surface and measures the intensity distribution of the laser beam; and
a control unit connected to the condensing lens driving unit and the beam analyzer,
the control unit has a function of acquiring an intensity distribution of the laser light on the light receiving surface while changing a height position of the condensing lens.
7. A chip transfer apparatus for irradiating a processing surface of a transfer substrate having a plurality of chip components arranged on a lower surface thereof, the processing surface being an interface between the chip components and the transfer substrate, with laser light from above through the transfer substrate, and peeling off and transferring the chip components onto an upper surface of a transfer destination substrate opposed to the chip components,
the chip transfer device is provided with the height adjustment device for the condensing lens according to claim 6.
8. A chip transfer apparatus for selectively transferring a plurality of chip components to a transfer substrate by irradiating the adhesive layer of the transfer substrate with laser through the transfer substrate, wherein the chip components are arranged on the transfer substrate with the adhesive layer therebetween,
the chip transfer device includes:
a laser oscillator having a wavelength capable of causing laser ablation in the adhesive layer;
a condensing unit disposed between the laser oscillator and the transfer substrate, and condensing the laser light; and
a beam shaper disposed between the condensing units of the laser oscillator,
the chip transfer device changes the state of the beam shaper, and can switch the intensity distribution of the laser irradiated to the bonding layer into a shape having a ring-shaped high-intensity region and a Gaussian shape or a top hat shape.
CN202080085634.5A 2019-12-12 2020-12-09 Height adjusting method and chip transfer method for condensing lens, height adjusting device for condensing lens, and chip transfer device Pending CN114788021A (en)

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