WO2021109283A1 - Oled显示面板及其制造方法、oled显示器 - Google Patents

Oled显示面板及其制造方法、oled显示器 Download PDF

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Publication number
WO2021109283A1
WO2021109283A1 PCT/CN2019/127641 CN2019127641W WO2021109283A1 WO 2021109283 A1 WO2021109283 A1 WO 2021109283A1 CN 2019127641 W CN2019127641 W CN 2019127641W WO 2021109283 A1 WO2021109283 A1 WO 2021109283A1
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Prior art keywords
dam
organic light
groove
emitting layer
light emitting
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PCT/CN2019/127641
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English (en)
French (fr)
Inventor
邴一飞
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/627,786 priority Critical patent/US20210367011A1/en
Publication of WO2021109283A1 publication Critical patent/WO2021109283A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • This application relates to the field of display, in particular to an OLED (Organic Light-Emitting Diode (Organic Light-Emitting Diode) display panel and its manufacturing method, OLED display.
  • OLED Organic Light-Emitting Diode
  • the inkjet printing process is an important process method for preparing OLED display panels.
  • the phenomenon of ink mixing of different luminescent materials often occurs.
  • the OLED display panel has problems with poor luminescence such as shifting of pixel luminous color and color mixing.
  • the manufacturing method of the OLED display panel provided by this application includes:
  • An anode electrode and a pixel definition layer are formed on the base substrate.
  • the pixel definition layer surrounds and forms a plurality of grooves arranged in an array.
  • the anode electrodes are located in the grooves one by one, and the plurality of grooves
  • the groove includes a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves.
  • the pixel definition layer includes a first dam, a second dam, and a third dam. The heights of the first dam and the second dam are equal. Greater than the height of the third dam, the first dam is located between the first groove and the second groove, and the second dam is located between the first groove and the third groove, so The third dam is located between the second groove and the third groove;
  • a cathode electrode covering the electron transport layer is formed.
  • An OLED display panel provided by this application includes:
  • the anode electrode and the pixel definition layer are located on the base substrate, the pixel definition layer surrounds and forms a plurality of grooves arranged in an array, the anode electrodes are located in the grooves one by one, and the plurality of grooves
  • the groove includes a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves.
  • the pixel definition layer includes a first dam, a second dam, and a third dam. The heights of the first dam and the second dam are equal. Greater than the height of the third dam, the first dam is located between the first groove and the second groove, and the second dam is located between the first groove and the third groove, so The third dam is located between the second groove and the third groove;
  • the organic light-emitting layer includes a first organic light-emitting layer, a second organic light-emitting layer, and a third organic light-emitting layer, and the thickness of the second organic light-emitting layer and the third organic light-emitting layer are equal and smaller than the thickness of the first organic light-emitting layer,
  • the first organic light emitting layer is located in the first groove
  • the second organic light emitting layer is located in the second groove
  • the third organic light emitting layer is located in the third groove
  • An electron transport layer covering the first organic light emitting layer, the second organic light emitting layer, the third organic light emitting layer and the pixel defining layer;
  • the cathode electrode covers the electron transport layer.
  • An OLED display provided by the present application includes an integrated circuit and an OLED display panel, the integrated circuit is connected to the OLED display panel, and the OLED display panel includes:
  • the anode electrode and the pixel definition layer are located on the base substrate, the pixel definition layer surrounds and forms a plurality of grooves arranged in an array, the anode electrodes are located in the grooves one by one, and the plurality of grooves
  • the groove includes a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves.
  • the pixel definition layer includes a first dam, a second dam, and a third dam. The heights of the first dam and the second dam are equal. Greater than the height of the third dam, the first dam is located between the first groove and the second groove, and the second dam is located between the first groove and the third groove, so The third dam is located between the second groove and the third groove;
  • the organic light-emitting layer includes a first organic light-emitting layer, a second organic light-emitting layer, and a third organic light-emitting layer, and the thickness of the second organic light-emitting layer and the third organic light-emitting layer are equal and smaller than the thickness of the first organic light-emitting layer,
  • the first organic light emitting layer is located in the first groove
  • the second organic light emitting layer is located in the second groove
  • the third organic light emitting layer is located in the third groove
  • An electron transport layer covering the first organic light emitting layer, the second organic light emitting layer, the third organic light emitting layer and the pixel defining layer;
  • the cathode electrode covers the electron transport layer.
  • the height of the first dam and the second dam is greater than the height of the third dam, the higher the first dam and the second dam can block the thicker film and the larger amount of ink in the first recess as much as possible. In the groove, it can also help to block the thinner ink with a smaller amount to avoid flowing toward the first groove, thereby preventing the inks with different organic light-emitting materials from mixing, and helping to avoid OLED display
  • the panel has poor light-emitting phenomena such as shifting of the pixel light-emitting color and color mixing.
  • FIG. 1 is a schematic flowchart of an embodiment of a method for manufacturing an OLED display panel according to the present application
  • FIG. 2 is a schematic diagram of dripping ink using an inkjet printing process in an embodiment of the present application
  • FIG. 3 is a schematic cross-sectional view of an OLED display panel according to an embodiment of the present application.
  • FIG. 4 is a schematic cross-sectional view of an OLED display panel according to another embodiment of the present application.
  • FIG. 1 is a schematic flowchart of an embodiment of a method for manufacturing an OLED display panel of the present application.
  • the manufacturing method of the OLED display panel includes the following steps:
  • the base substrate 41 is used to carry various structural layers and electronic components of the OLED display panel 40.
  • the base substrate 41 may be a flexible board with bendable characteristics, and its main material includes but is not limited to polyimide (PI).
  • the base substrate 41 may be covered with a buffer layer, which has a water and oxygen barrier function, and its main components include but are not limited to silicon nitride (SiN x ), silicon oxide compound (SiO x ), silicon Nitrogen oxide (SiO x N y ), etc.
  • the thickness of the buffer layer can be between 500 and 1000 nanometers.
  • An anode electrode and a pixel definition layer are formed on the base substrate.
  • the pixel definition layer surrounds and forms a plurality of grooves arranged in an array.
  • the anode electrodes are located in the grooves one by one, and the plurality of grooves includes a plurality of first grooves, A number of second grooves and a number of third grooves.
  • the pixel definition layer includes a first dam, a second dam and a third dam.
  • the heights of the first dam and the second dam are both greater than the height of the third dam.
  • the first dam is located in the first dam. Between a groove and a second groove, the second dam is located between the first groove and the third groove, and the third dam is located between the second groove and the third groove.
  • the anode electrode 42 can be formed first, and then the pixel defining layer can be formed.
  • a photomask etching process (including film formation, exposure, development, and etching processes) can be used to fabricate the anode electrodes. 42 and pixel definition layer.
  • the process of forming the anode electrode 42 by the photomask etching process specifically:
  • a conductive layer 421 and a photoresist layer 422 covering the conductive layer 421 are formed on the base substrate 41.
  • the conductive layer 421 can be made of materials with good conductivity and high corrosion resistance, such as metal materials, including but not limited to molybdenum, nickel, palladium, cobalt, tungsten, rhodium, titanium, chromium, gold, silver, platinum, etc.
  • the conductive layer 421 can adopt a multi-layer metal superimposed structure, such as a three-layer metal structure of molybdenum, aluminum, and molybdenum, or a three-layer metal structure of nickel, copper, and nickel, such as molybdenum, copper, and nickel.
  • the three-layer metal structure of molybdenum, or the three-layer metal structure of nickel, aluminum, and nickel By providing a three-layer metal conductive structure, not only the conductivity of the conductive layer 421 and the anode electrode 42 made therefrom can be improved, but also the corrosion resistance of the conductive layer 421 and the anode electrode 42 can be improved.
  • the photoresist layer 422 is exposed by a photomask 50 to obtain a photoresist layer 4221 having a predetermined pattern, wherein the photoresist layer 4221 having a predetermined pattern exposes the portion of the conductive layer 421 to be etched.
  • the photomask 50 is provided with light-transmitting regions 501.
  • the photomask 50 is spaced above the photoresist layer 422, and the pattern of the light-transmitting regions 501 is consistent with the final pattern to be etched. Light passes through the light-transmitting area 501 and irradiates the photoresist layer 422 for exposure.
  • the exposed part of the photoresist layer 422 is removed by the developer, while the unexposed part of the photoresist layer 422 cannot be removed by the developer and finally Therefore, in a top view state, the photoresist layer 422 is transformed into a photoresist layer 4221 having a predetermined pattern, wherein the part of the photoresist layer 422 removed by the developer exposes the conductive layer 421 The part to be etched.
  • the part of the conductive layer 421 that is not covered by the photoresist layer 4221 is etched away.
  • a dry etching process or a wet etching process may be used to remove the portion of the conductive layer 421 that is not covered by the photoresist layer 4221.
  • the wet etching process the part of the conductive layer 421 covered by the photoresist layer 4221 is in full contact with the etching solution and undergoes a dissolution reaction to be completely removed, while the part that is not covered by the photoresist layer 4221 cannot interact with the etching solution.
  • the etching solution contacts and is finally retained, and finally the conductive layer 421 is etched and transformed into an anode electrode 42 having a predetermined pattern.
  • the photoresist layer 4221 is removed by ashing, and the anode electrode 42 can be obtained.
  • the pixel definition layer can be obtained through a mask using a film forming process such as Physical Vapor Deposition (PVD), Pulsed Laser Deposition (PLD), and magnetron sputtering.
  • PVD Physical Vapor Deposition
  • PLD Pulsed Laser Deposition
  • magnetron sputtering the pixel definition layer can also be prepared by a photomask etching process, and the process and principle can be referred to above, and will not be repeated here.
  • the pixel defining layer surrounds and forms a plurality of grooves arranged in an array, and each anode electrode 42 is located in a groove.
  • These grooves are used to define the pixel area of the OLED display panel 40, and the pixel area includes The three color pixel regions of the red pixel region 44R, the green pixel region 44G, and the blue pixel region 44B are taken as an example.
  • These grooves can be divided into the first groove 431a for defining the red pixel region 44R and for defining the blue color.
  • the second groove 431b of the pixel area 44B and the third groove 431c for defining the green pixel area 44G.
  • the pixel definition layer can be divided into a first bank 432a, a second bank 432b, and a third bank 432c.
  • the first bank 432a is located between the first groove 431a and the second groove 431b
  • the second bank 432b is located on the first bank 432a.
  • the third dam 432c is located between the second groove 431b and the third groove 431c.
  • the height h1 of the first dam 432a and the height h2 of the second dam 432b may not be equal, but the heights of both are greater than the height h3 of the third dam 432c. , That is, h1 ⁇ h2, and h1>h3, h2>h3.
  • the first organic light-emitting material is used to emit red light
  • the second organic light-emitting material is used to emit blue light
  • the third organic light-emitting material is used to emit green light.
  • the ink 451 with the first organic light-emitting material, the ink 452 with the second organic light-emitting material, and the ink 453 with the third organic light-emitting material can be dropped into the first groove 431a and the second groove 431a at the same time.
  • the ink with the organic luminescent material can also be dropped into the three types of grooves in a predetermined order.
  • the ink 451 with the first organic luminescent material can be first Drop into the first groove 431a, then drop the ink 452 with the second organic light-emitting material into the second groove 431b, and finally drop the ink 453 with the third organic light-emitting material into the third groove 431c .
  • the embodiment of the present application further processes the ink dropped into the three types of grooves, so that the ink 451 in which the first organic light-emitting material is dissolved is formed into a film of the first organic light-emitting layer 461
  • the ink 452 dissolving the second organic light-emitting material is formed into a film of the second organic light-emitting layer 462
  • the ink 453 dissolving the third organic light-emitting material is formed into a film of the third organic light-emitting layer 463.
  • the first organic light emitting layer 461, the second organic light emitting layer 462, and the third organic light emitting layer 463 form an organic light emitting layer of the OLED display panel 40.
  • an electron transport layer (ETL) 47 and a cathode electrode (Cathode) 48 may be sequentially formed through film forming processes such as PVD, PLD, and sputtering.
  • the OLED display panel 40 also includes a hole injection layer (HIL) and a hole transport layer (Hole).
  • HIL hole injection layer
  • Hole hole transport Layer
  • EIL electron injection layer
  • the hole injection layer is formed on the anode electrode 42
  • the hole transport layer is formed between the hole injection layer and the organic light emitting layer
  • the electron injection layer is formed between the electron transport layer 47 and the cathode electrode 48.
  • the OLED display panel 40 can be manufactured through the aforementioned steps S31 to S35.
  • the organic light-emitting layer of the red pixel ie, the first organic light-emitting layer 461) of the OLED display panel 40 has the largest thickness
  • the organic light-emitting layer of the blue pixel ie the second organic light-emitting layer 462
  • the organic light-emitting layer of the green pixel ie, the The thickness of the third organic light-emitting layer 463) is equal.
  • the height h1 of the first dam 432a and the height h2 of the second dam 432b are both greater than the height h3 of the third dam 432c, that is, h1>h3 and h2>h3.
  • the amount of ink 451 with red organic light-emitting material dissolved is greater than that of ink 452 with blue organic light-emitting material, and it is also greater than ink 453 with green organic light-emitting material.
  • the higher first dam 432a and second dam 432b can block the larger amount of ink 451 in the first groove 431a as much as possible, while the amount of ink 452 and ink 453 is smaller, and the higher first dam 432a and second dam 432b can easily block them to avoid facing
  • the flow of the first groove 431a can prevent the inks 451, 452, and 453 from being mixed, which is beneficial to avoid the occurrence of undesirable phenomena such as pixel emission color shift and color mixing in the OLED display panel 40.
  • the height h3 of the third dam 432c may be equal to the height of the pixel definition layer in the prior art.
  • the embodiment of the present application can be regarded as the part of the existing pixel definition layer 13 located around the red pixel region 14R Heighten.
  • each groove is provided to define pixel areas of other colors, and accordingly, the color of the organic light-emitting material dissolved in the ink also changes.
  • the embodiment of the present application designs that the height h1 of the first dam 432a and the height h2 of the second dam 432b are both greater than the height h3 of the third dam 432c, and the higher first dam 432a and the second dam 432a
  • the second bank 432b can block the thicker ink 451 in the first groove 431a as much as possible, and it can also help block the thinner ink 452, 453 with a smaller amount to avoid facing
  • the flow of the first groove 431a can prevent the inks dissolving different organic light-emitting materials from mixing, which is beneficial to prevent the OLED display panel 40 from pixel light-emitting color shift and color mixing.
  • the slopes of the first dam 432a and the second dam 432b are relatively steep, the ink 451 in the first groove 431a is not easy to overflow, and the ink 452 in the second groove 431b is not easy to overflow to the top of the first dam 432a.
  • the ink 453 in the third groove 431c is not easy to overflow to the top of the second dam 432b, which is more conducive to the mixing of inks with different organic luminescent materials through the first dam 432a and the second dam 432b, which is further helpful to avoid
  • the OLED display panel 40 exhibits poor pixel light emission.
  • the surface of the base substrate 41 may be hydrophilic, and the surfaces of the first dam 432a, the second dam 432b, and the third dam 432c are all hydrophobic.
  • the inks 451, 452, and 453 are not easy to overflow to the corresponding dams, but are more likely to overflow to the base substrate 41. Therefore, it can also be advantageous for the inks with different organic light-emitting materials to pass through the first dam 432a and the second dam 432b.
  • the mixing is beneficial to avoid the phenomenon of poor pixel light emission in the OLED display panel 40.
  • FIG. 4 is a schematic cross-sectional view of an OLED display panel according to another embodiment of the present application.
  • the same reference numbers are used in the embodiments of the present application for identification.
  • the difference is that in the OLED display panel 40 of this embodiment, the second bank 432b and the third bank 432c are not formed by the same photomask etching process, but are formed by two Manufactured by photomask etching process. in particular:
  • the first dam 432a includes a first main dam a1 and a first sub-dam a2 located on the first main dam a1
  • the second dam 432b includes a second main dam b1 and a second sub-dam b2 located on the second main dam b1.
  • the heights of the first main dam a1, the second main dam b1, and the third dam 432c may be equal, and all are h3.
  • first main dam a1, the second main dam b1, and the third dam 432c are made by the same photomask etching process, while the first sub-dam a2 and the second sub-dam b2 are made by another photomask etching process once. be made of.
  • the difference between the OLED display panel 40 of the embodiment shown in FIG. 4 and FIG. 3 is only that the number of processes for preparing the second dam 432b and the third dam 432c is different, but the heights of the second dam 432b and the third dam 432c are unchanged. Therefore, the OLED display panel 40 of the embodiment shown in FIG. 4 still has the beneficial effects of the embodiment shown in FIG. 3.
  • the height h1 of the first dam 432a and the height h2 of the second dam 432b are not equal, the heights of the first sub-dam a2 and the second sub-dam b2 are not equal.
  • the first main dam a1, the second main dam b1, and the third dam 432c are manufactured by the same photomask etching process, the first sub-dam a2 is manufactured by another photomask etching process, and the second sub-dam b2 is made by another photomask etching process.
  • the application also provides an OLED display according to an embodiment.
  • the OLED display includes an integrated circuit (Integrated Circuit, IC) and an OLED display panel connected to an integrated circuit.
  • the OLED display panel may have the same structure as the OLED display panel 40 of any of the foregoing embodiments. Therefore, the OLED display may also be designed to have the height of the first dam equal to The height of the second dam, and both heights are greater than the height of the third dam.
  • the higher first dam and the second dam can block the thicker film and the larger amount of ink in the first groove as much as possible At the same time, it can also help to block the thinner ink with a smaller amount to avoid flowing toward the first groove, thereby preventing the inks with different organic light-emitting materials from being mixed, and helping to avoid the appearance of pixel light-emitting colors.
  • Undesirable phenomena such as offset and color mixing.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features.
  • features defined with “first” and “second” may explicitly or implicitly include one or more features.
  • “multiple” means two or more than two, unless otherwise specifically defined.

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Abstract

一种OLED显示面板及其制造方法、OLED显示器。通过设计第一堤坝（432a）的高度（h1）和第二堤坝（432b）的高度（h2）均大于第三堤坝（432c）的高度（h3），较高的第一堤坝（432a）和第二堤坝（432b）能够将成膜较厚的量较大的墨水（451）尽可能阻挡在第一凹槽（431a）内，同时也能够有利于将成膜较薄的量较小的墨水（452，453）阻挡以避免朝向第一凹槽（431a）流动，从而能够防止溶有不同有机发光材料的墨水（451，452，453）之间发生混合。

Description

OLED显示面板及其制造方法、OLED显示器 技术领域
本申请涉及显示领域，特别涉及一种OLED（Organic Light-Emitting Diode, 有机发光二极管）显示面板及其制造方法、OLED显示器。
 背景技术
喷墨打印工艺是制备OLED显示面板的重要工艺手段，然而由于OLED器件每种颜色需要的发光材料和膜层厚度不同以及喷墨打印的制程特殊性，往往会发生不同发光材料墨水混合的现象，从而使得OLED显示面板出现像素发光颜色发生偏移及混色等发光不良的问题。
 技术问题
现有技术在采用喷墨打印制备有机发光层时相邻像素区的不同颜色墨水混合所导致的发光不良的问题。
 技术解决方案
本申请提供的OLED显示面板的制造方法，包括：
提供衬底基板；
在所述衬底基板上形成阳电极和像素定义层，所述像素定义层围绕形成呈阵列排布的多个凹槽，所述阳电极一一位于所述凹槽中，所述多个凹槽包括若干第一凹槽、若干第二凹槽和若干第三凹槽，所述像素定义层包括第一堤坝、第二堤坝和第三堤坝，所述第一堤坝和第二堤坝的高度均大于所述第三堤坝的高度，所述第一堤坝位于所述第一凹槽和第二凹槽之间，所述第二堤坝位于所述第一凹槽和第三凹槽之间，所述第三堤坝位于所述第二凹槽和第三凹槽之间；
通过喷墨打印将溶有第一有机发光材料的墨水滴入所述第一凹槽中并成膜形成第一有机发光层，将溶有第二有机发光材料的墨水滴入所述第二凹槽中并成膜形成第二有机发光层，以及将溶有第三有机发光材料的墨水滴入所述第三凹槽中并成膜形成第三有机发光层；
形成覆盖所述第一有机发光层、第二有机发光层、第三有机发光层以及所述像素定义层的电子传输层；
形成覆盖所述电子传输层的阴电极。
本申请提供的一种OLED显示面板，包括：
衬底基板；
阳电极和像素定义层，位于所述衬底基板上，所述像素定义层围绕形成呈阵列排布的多个凹槽，所述阳电极一一位于所述凹槽中，所述多个凹槽包括若干第一凹槽、若干第二凹槽和若干第三凹槽，所述像素定义层包括第一堤坝、第二堤坝和第三堤坝，所述第一堤坝和第二堤坝的高度均大于所述第三堤坝的高度，所述第一堤坝位于所述第一凹槽和第二凹槽之间，所述第二堤坝位于所述第一凹槽和第三凹槽之间，所述第三堤坝位于所述第二凹槽和第三凹槽之间；
有机发光层，包括第一有机发光层、第二有机发光层和第三有机发光层，所述第二有机发光层和第三有机发光层的厚度相等且均小于第一有机发光层的厚度，所述第一有机发光层位于第一凹槽中，所述第二有机发光层位于第二凹槽中，所述第三有机发光层位于第三凹槽中；
电子传输层，覆盖于所述第一有机发光层、第二有机发光层、第三有机发光层以及所述像素定义层上；
阴电极，覆盖于所述电子传输层上。
本申请提供的一种OLED显示器，包括集成电路以及OLED显示面板，所述集成电路与OLED显示面板连接，所述OLED显示面板包括：
衬底基板；
阳电极和像素定义层，位于所述衬底基板上，所述像素定义层围绕形成呈阵列排布的多个凹槽，所述阳电极一一位于所述凹槽中，所述多个凹槽包括若干第一凹槽、若干第二凹槽和若干第三凹槽，所述像素定义层包括第一堤坝、第二堤坝和第三堤坝，所述第一堤坝和第二堤坝的高度均大于所述第三堤坝的高度，所述第一堤坝位于所述第一凹槽和第二凹槽之间，所述第二堤坝位于所述第一凹槽和第三凹槽之间，所述第三堤坝位于所述第二凹槽和第三凹槽之间；
有机发光层，包括第一有机发光层、第二有机发光层和第三有机发光层，所述第二有机发光层和第三有机发光层的厚度相等且均小于第一有机发光层的厚度，所述第一有机发光层位于第一凹槽中，所述第二有机发光层位于第二凹槽中，所述第三有机发光层位于第三凹槽中；
电子传输层，覆盖于所述第一有机发光层、第二有机发光层、第三有机发光层以及所述像素定义层上；
阴电极，覆盖于所述电子传输层上。
 有益效果
本发明通过设计第一堤坝和第二堤坝的高度均大于第三堤坝的高度，较高的第一堤坝和第二堤坝能够将成膜较厚的量较大的墨水尽可能阻挡在第一凹槽内，同时也能够有利于将成膜较薄的量较小的墨水阻挡以避免朝向第一凹槽流动，从而能够防止溶有不同有机发光材料的墨水之间发生混合，有利于避免OLED显示面板出现像素发光颜色发生偏移及混色等发光不良现象。
 附图说明
图1是本申请OLED显示面板的制造方法一实施例的流程示意图；
图2是本申请一实施例中采用喷墨打印工艺滴注墨水的示意图；
图3是本申请一实施例的OLED显示面板的截面示意图；
图4是本申请另一实施例的OLED显示面板的截面示意图。
 本发明的实施方式
下面结合附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请一部分实施例，而非全部实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。在不冲突的情况下，下述各个实施例及其技术特征可以相互组合。
图1是本申请OLED显示面板的制造方法一实施例的流程示意图。请参阅图1，所述OLED显示面板的制造方法包括以下步骤：
S31：提供衬底基板。
请一并结合图2和图3所示，所述衬底基板41用于承载OLED显示面板40的各结构层以及电子元件。为适应于OLED显示面板40的可弯折特性，该衬底基板41可以为具有可弯折特性的柔性板件，其主要材料包括但不限于为聚酰亚胺（Polyimide, PI）。
所述衬底基板41上可以覆盖有缓冲层（buffer layer），该缓冲层具有阻水隔氧功能，其主要成分包括不限于硅氮化合物（SiN x）、硅氧化合物（SiO x）、硅氮氧化物（SiO xN y）等，另外，该缓冲层的厚度可以介于500~1000纳米之间。在设置有缓冲层时，下述步骤所述制备的各结构层以及电子元件，例如阳电极42和像素定义层位于该缓冲层上。当然，对于OLED显示面板40未设置缓冲层的结构设计，下述阳电极42和像素定义层直接设置于衬底基板41上。下述以所述OLED显示面板40未设置缓冲层的结构设计为例进行描述。
S32：在衬底基板上形成阳电极和像素定义层，像素定义层围绕形成呈阵列排布的多个凹槽，阳电极一一位于凹槽中，多个凹槽包括若干第一凹槽、若干第二凹槽和若干第三凹槽，像素定义层包括第一堤坝、第二堤坝和第三堤坝，第一堤坝和第二堤坝的高度均大于第三堤坝的高度，第一堤坝位于第一凹槽和第二凹槽之间，第二堤坝位于第一凹槽和第三凹槽之间，第三堤坝位于第二凹槽和第三凹槽之间。
请参阅图2所示，本实施例可以先形成阳电极42，再形成所述像素定义层，例如可以采用光罩刻蚀制程（包括成膜、曝光、显影及刻蚀工艺）分别制作阳电极42和像素定义层。
采用光罩刻蚀制程形成阳电极42的过程，具体而言：
首先，在衬底基板41上形成一整面导电层421和覆盖导电层421的光阻层422。所述导电层421可采用导电性好且耐腐蚀性高的材料，例如金属材料，包括但不限于为钼、镍、钯、钴、钨、 铑、钛、铬、金、银、铂等。当然，为了进一步提高其导电性，所述导电层421可采用多层金属叠加结构，例如钼、铝、钼的三层金属结构，或者镍、铜、镍的三层金属结构，钼、铜、钼的三层金 属结构，或者镍、铝、镍的三层金属结构。通过设置三层金属导电结构，不仅能够提高导电层421以及由其制得的阳电极42的导电性能，而且也能提高导电层421和所述阳电极42的耐腐蚀性。
接着，利用光罩50曝光所述光阻层422以得到具有预定图案的光阻层4221，其中具有预定图案的光阻层4221暴露导电层421的待刻蚀部分。具体地，所述光罩50设置有透光区501，在曝光过程中，光罩50间隔设置于光阻层422的上方，该透光区501的图案与最终所要刻蚀的图案相一致，光透过所述透光区501并照射至光阻层422以进行曝光，光阻层422的被曝光部分被显影液去除，而光阻层422的未被曝光部分无法被显影液去除并最终得以保留，由此，在俯视状态下，所述光阻层422转变为具有预定图案的光阻层4221，这其中，所述光阻层422的被显影液去除的部分暴露出导电层421的待刻蚀部分。
然后，刻蚀去除导电层421的未被光阻层4221遮盖的部分。本实施例可以采用干法刻蚀工艺或者湿法刻蚀工艺去除导电层421的未被光阻层4221遮盖的部分。以湿法刻蚀工艺来说，所述导电层421的被光阻层4221遮盖的部分与刻蚀液充分接触并发生溶解反应从而被完全去除，而未被光阻层4221遮盖的部分无法与刻蚀液接触并最终得以保留，最终导电层421刻蚀转变为具有预定图案的阳电极42。
最后，灰化去除光阻层4221，即可得到所述阳电极42。
像素定义层可以通过掩模板，并采用物理气相沉积（Physical Vapor Deposition, PVD）、脉冲激光沉积（Pulsed laser deposition, PLD）、磁控溅射等成膜工艺制得。当然，该像素定义层也可以采用光罩刻蚀制程予以制备，其过程及原理可参阅上述，此处不再予以赘述。
请继续参阅图2，像素定义层围绕形成呈阵列排布的多个凹槽，每一阳电极42位于一个凹槽中，这些凹槽用于限定OLED显示面板40的像素区，以像素区包括红色像素区44R、绿色像素区44G和蓝色像素区44B这三种颜色像素区为例，这些凹槽可被划分为用于限定红色像素区44R的第一凹槽431a、用于限定蓝色像素区44B的第二凹槽431b、以及用于限定绿色像素区44G的第三凹槽431c。
像素定义层可以被划分为第一堤坝（bank）432a、第二堤坝432b和第三堤坝432c，第一堤坝432a位于第一凹槽431a和第二凹槽431b之间，第二堤坝432b位于第一凹槽431a和第三凹槽431c之间，第三堤坝432c位于第二凹槽431b和第三凹槽431c之间。
其中，请一并参阅图3所示，所述第一堤坝432a的高度h1等于所述第二堤坝432b的高度h2，且两者的高度均大于所述第三堤坝432c的高度h3，即h1= h2＞h3。
应该理解到，在其他实施例中，所述第一堤坝432a的高度h1和所述第二堤坝432b的高度h2也可以不相等，但两者的高度均大于所述第三堤坝432c的高度h3，即h1≠ h2，且h1＞h3，h2＞h3。
S33：通过喷墨打印将溶有第一有机发光材料的墨水滴入第一凹槽中并成膜形成第一有机发光层，将溶有第二有机发光材料的墨水滴入第二凹槽中并成膜形成第二有机发光层，以及将溶有第三有机发光材料的墨水滴入第三凹槽中并成膜形成第三有机发光层。
请继续参阅图2所示，第一有机发光材料用于发出红色光，第二有机发光材料用于发出蓝色光，第三有机发光材料用于发出绿色光。本申请实施例可以同时将溶有第一有机发光材料的墨水451、溶有第二有机发光材料的墨水452以及溶有第三有机发光材料的墨水453分别滴入第一凹槽431a、第二凹槽431b和第三凹槽431c中，也可以按照预定顺序将溶有有机发光材料的墨水分别滴入三类凹槽中，举例而言，可以先将溶有第一有机发光材料的墨水451滴入第一凹槽431a中，再将溶有第二有机发光材料的墨水452滴入第二凹槽431b中，最后将溶有第三有机发光材料的墨水453滴入第三凹槽431c中。
请一并参阅图2和图3所示，本申请实施例进一步烘干处理滴入三类凹槽中的墨水，使得溶有第一有机发光材料的墨水451成膜为第一有机发光层461，溶有第二有机发光材料的墨水452成膜为第二有机发光层462，溶有第三有机发光材料的墨水453成膜为第三有机发光层463。所述第一有机发光层461、第二有机发光层462和第三有机发光层463形成所述OLED显示面板40的有机发光层。
S34：形成覆盖第一有机发光层、第二有机发光层、第三有机发光层以及像素定义层的电子传输层。
S35：形成覆盖所述电子传输层的阴电极。
本申请实施例可以通过PVD、PLD、溅射等成膜工艺依次形成电子传输层（Electron transport layer, ETL）47和阴电极（Cathode）48。
应理解，前述步骤并未制得OLED显示面板40的所有结构件，例如OLED显示面板40还包括空穴注入层（Hole Inject Layer, HIL）、空穴传输层（Hole transport Layer, HTL）、电子注入层（Electron Inject layer, EIL），空穴注入层形成于阳电极42上，空穴传输层形成于空穴注入层和有机发光层之间，电子注入层形成于电子传输层47和阴电极48之间。这些未描述的结构件的制造过程可参阅现有技术。
通过前述步骤S31~S35即可制得OLED显示面板40。
鉴于OLED显示面板40的红色像素的有机发光层（即第一有机发光层461）的厚度最大，蓝色像素的有机发光层（即第二有机发光层462）和绿色像素的有机发光层（即第三有机发光层463）的厚度相等，本申请实施例通过设计第一堤坝432a的高度h1和第二堤坝432b的高度h2均大于第三堤坝432c的高度h3，即h1＞h3且h2＞h3，溶有红色有机发光材料的墨水451的量大于溶有蓝色有机发光材料的墨水452，也大于溶有绿色有机发光材料的墨水453，于此，较高的第一堤坝432a和第二堤坝432b能够将量较大的墨水451尽可能阻挡在第一凹槽431a内，同时墨水452和墨水453的量较小，较高的第一堤坝432a和第二堤坝432b容易将之阻挡以避免朝向第一凹槽431a流动，从而能够防止墨水451、452、453这三者之间发生混合，有利于避免OLED显示面板40出现像素发光颜色偏移及混色等不良现象。
其中，所述第三堤坝432c的高度h3可以与现有技术中像素定义层的高度相等，于此，本申请实施例可视为将现有像素定义层13的位于红色像素区14R周围的部分加高。
应理解，上述红色像素区44R、蓝色像素区44B及绿色像素区44G与第一凹槽431a、第二凹槽431b和第二凹槽431c的对应关系仅为举例说明，其他实施例也可以设置各个凹槽用于限定其他颜色像素区，相应地，墨水中溶有的有机发光材料的颜色也发生变化。但无论各颜色像素区如何排布，本申请实施例通过设计第一堤坝432a的高度h1和第二堤坝432b的高度h2均大于第三堤坝432c的高度h3，较高的第一堤坝432a和第二堤坝432b能够将成膜较厚的量较大的墨水451尽可能阻挡在第一凹槽431a内，同时也能够有利于将成膜较薄的量较小的墨水452、453阻挡以避免朝向第一凹槽431a流动，从而能够防止溶有不同有机发光材料的墨水之间发生混合，有利于避免OLED显示面板40出现像素发光颜色偏移及混色等不良现象。
请继续参阅图3所示，所述第一堤坝432a的倾斜角θ1和第二堤坝432b的倾斜角θ2相等，且两者的倾斜角均大于第三堤坝432c的倾斜角θ3，即θ1= θ2 ＞θ3，其中倾斜角θ1、θ2、θ3均为锐角。于此，第一堤坝432a和第二堤坝432b的坡度较陡，第一凹槽431a内的墨水451不易溢出，同时第二凹槽431b内的墨水452也不易溢向第一堤坝432a的顶部，第三凹槽431c内的墨水453也不易溢向第二堤坝432b的顶部，以此更加有利于溶有不同有机发光材料的墨水通过第一堤坝432a和第二堤坝432b发生混合，进一步有利于避免OLED显示面板40出现像素发光不良现象。
在一具体实施例中，所述衬底基板41的表面可以具有亲水性，所述第一堤坝432a、第二堤坝432b和第三堤坝432c这三者的表面均具有疏水性，于此，墨水451、452、453均不易溢向相对应的堤坝，而是更加容易溢向衬底基板41，因此也能够有利于溶有不同有机发光材料的墨水通过第一堤坝432a和第二堤坝432b发生混合，从而有利于避免OLED显示面板40出现像素发光不良现象。
图4是本申请另一实施例的OLED显示面板的截面示意图。对于相同名称的结构元件，本申请实施例采用相同的标号进行标识。在前述实施例的描述基础上但不同之处在于，在本实施例的OLED显示面板40中，所述第二堤坝432b和第三堤坝432c并非采用同一道光罩刻蚀制程形成，而是由两道光罩刻蚀制程制得。具体而言：
第一堤坝432a包括第一主堤坝a1和位于第一主堤坝a1上的第一子堤坝a2，第二堤坝432b包括第二主堤坝b1和位于第二主堤坝b1上的第二子堤坝b2。第一主堤坝a1、第二主堤坝b1和第三堤坝432c这三者的高度可以相等，均为h3。第一子堤坝a2和第二子堤坝b2这两者的高度可以相等，均为h4，且h4+h3= h1= h2。于此，第一主堤坝a1、第二主堤坝b1和第三堤坝432c由同一道光罩刻蚀制程制得，而第一子堤坝a2和第二子堤坝b2由另一道光罩刻蚀制程一次制得。
图4和图3所示实施例的OLED显示面板40的区别仅在于制得第二堤坝432b和第三堤坝432c的制程次数不同，但第二堤坝432b和第三堤坝432c的高度均未发生变化，因此图4所示实施例的OLED显示面板40仍具有前述图3所示实施例的有益效果。
而对于所述第一堤坝432a的高度h1和所述第二堤坝432b的高度h2不相等的情况，第一子堤坝a2和第二子堤坝b2这两者的高度则不相等。于此，第一主堤坝a1、第二主堤坝b1和第三堤坝432c由同一道光罩刻蚀制程制得，第一子堤坝a2由另一道光罩刻蚀制程制得，而第二子堤坝b2则由再一道光罩刻蚀制程制得。
本申请还提供一实施例的OLED显示器，该OLED显示器包括集成电路（Integrated Circuit, IC）及与集成电路连接的OLED显示面板，该OLED显示面板可以具有与前述任一实施例的OLED显示面板40相同的结构，因此，该OLED显示器也可以通过设计第一堤坝的高度等于第二堤坝的高度，且两者的高度均大于第三堤坝的高度，较高的第一堤坝和第二堤坝能够将成膜较厚的量较大的墨水尽可能阻挡在第一凹槽内，同时也能够有利于将成膜较薄的量较小的墨水阻挡以避免朝向第一凹槽流动，从而能够防止溶有不同有机发光材料的墨水之间发生混合，有利于避免出现像素发光颜色偏移及混色等不良现象。
尽管已经相对于一个或多个实现方式示出并描述了本申请，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本申请包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。
即，以上所述仅为本申请的实施例，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。
另外，在本申请实施例的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。另外，对于特性相同或相似的结构元件，本申请可采用相同或者不相同的标号进行标识。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请中，“示例性”一词是用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何一个实施例不一定被解释为比其它实施例更加优选或更加具优势。为了使本领域任何技术人员能够实现和使用本申请，本申请给出了以上描述。在以上描述中，为了解释的目的而列出了各个细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本申请。在其它实施例中，不会对公知的结构和过程进行详细阐述，以避免不必要的细节使本申请的描述变得晦涩。因此，本申请并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。

Claims (18)

  1. 一种有机发光显示面板的制造方法，其中，包括：
    提供衬底基板；
    在所述衬底基板上形成阳电极和像素定义层，所述像素定义层围绕形成呈阵列排布的多个凹槽，所述阳电极一一位于所述凹槽中，所述多个凹槽包括若干第一凹槽、若干第二凹槽和若干第三凹槽，所述像素定义层包括第一堤坝、第二堤坝和第三堤坝，所述第一堤坝和第二堤坝的高度均大于所述第三堤坝的高度，所述第一堤坝位于所述第一凹槽和第二凹槽之间，所述第二堤坝位于所述第一凹槽和第三凹槽之间，所述第三堤坝位于所述第二凹槽和第三凹槽之间；
    通过喷墨打印将溶有第一有机发光材料的墨水滴入所述第一凹槽中并成膜形成第一有机发光层，将溶有第二有机发光材料的墨水滴入所述第二凹槽中并成膜形成第二有机发光层，以及将溶有第三有机发光材料的墨水滴入所述第三凹槽中并成膜形成第三有机发光层；
    形成覆盖所述第一有机发光层、第二有机发光层、第三有机发光层以及所述像素定义层的电子传输层；
    形成覆盖所述电子传输层的阴电极。
  2. 根据权利要求1所述的方法，其中，所述第一堤坝和第二堤坝的倾斜角相等且均大于所述第三堤坝的倾斜角。
  3. 根据权利要求1所述的方法，其中，所述衬底基板表面具有亲水性，所述第一堤坝、第二堤坝和第三堤坝表面均具有疏水性。
  4. 根据权利要求1所述的方法，其中，所述第一堤坝和第二堤坝的高度相等。
  5. 根据权利要求1所述的方法，其中，所述第一堤坝包括第一主堤坝和位于所述第一主堤坝上的第一子堤坝，所述第二堤坝包括第二主堤坝和位于所述第二主堤坝上的第二子堤坝，所述第一主堤坝、第二主堤坝和第三堤坝的高度相等。
  6. 根据权利要求5所述的方法，其中，所述第一子堤坝和所述第二子堤坝的高度相等。
  7. 一种有机发光显示面板，其中，包括：
    衬底基板；
    阳电极和像素定义层，位于所述衬底基板上，所述像素定义层围绕形成呈阵列排布的多个凹槽，所述阳电极一一位于所述凹槽中，所述多个凹槽包括若干第一凹槽、若干第二凹槽和若干第三凹槽，所述像素定义层包括第一堤坝、第二堤坝和第三堤坝，所述第一堤坝和第二堤坝的高度均大于所述第三堤坝的高度，所述第一堤坝位于所述第一凹槽和第二凹槽之间，所述第二堤坝位于所述第一凹槽和第三凹槽之间，所述第三堤坝位于所述第二凹槽和第三凹槽之间；
    有机发光层，包括第一有机发光层、第二有机发光层和第三有机发光层，所述第二有机发光层和第三有机发光层的厚度均小于第一有机发光层的厚度，所述第一有机发光层位于第一凹槽中，所述第二有机发光层位于第二凹槽中，所述第三有机发光层位于第三凹槽中；
    电子传输层，覆盖于所述第一有机发光层、第二有机发光层、第三有机发光层以及所述像素定义层上；
    阴电极，覆盖于所述电子传输层上。
  8. 根据权利要求7所述的有机发光显示面板，其中, 所述第一堤坝和第二堤坝的高度相等，以及所述第二有机发光层和第三有机发光层的厚度相等。
  9. 根据权利要求8所述的有机发光显示面板，其中，所述第一堤坝和第二堤坝的倾斜角相等且均大于所述第三堤坝的倾斜角。
  10. 根据权利要求8所述的有机发光显示面板，其中，所述衬底基板的表面具有亲水性，所述第一堤坝、第二堤坝和第三堤坝的表面均具有疏水性。
  11. 根据权利要求8所述的有机发光显示面板，其中，所述第一堤坝包括第一主堤坝和位于所述第一主堤坝上的第一子堤坝，所述第二堤坝包括第二主堤坝和位于所述第二主堤坝上的第二子堤坝，所述第一主堤坝、第二主堤坝和第三堤坝的高度相等。
  12. 根据权利要求11所述的有机发光显示面板，其中，所述第一子堤坝和所述第二子堤坝的高度相等。
  13. 一种有机发光显示器，其中，所述有机发光显示器包括集成电路以及有机发光显示面板，所述集成电路与所述有机发光显示面板连接，所述有机发光显示面板包括：
    衬底基板；
    阳电极和像素定义层，位于所述衬底基板上，所述像素定义层围绕形成呈阵列排布的多个凹槽，所述阳电极一一位于所述凹槽中，所述多个凹槽包括若干第一凹槽、若干第二凹槽和若干第三凹槽，所述像素定义层包括第一堤坝、第二堤坝和第三堤坝，所述第一堤坝和第二堤坝的高度均大于所述第三堤坝的高度，所述第一堤坝位于所述第一凹槽和第二凹槽之间，所述第二堤坝位于所述第一凹槽和第三凹槽之间，所述第三堤坝位于所述第二凹槽和第三凹槽之间；
    有机发光层，包括第一有机发光层、第二有机发光层和第三有机发光层，所述第二有机发光层和第三有机发光层的厚度均小于第一有机发光层的厚度，所述第一有机发光层位于第一凹槽中，所述第二有机发光层位于第二凹槽中，所述第三有机发光层位于第三凹槽中；
    电子传输层，覆盖于所述第一有机发光层、第二有机发光层、第三有机发光层以及所述像素定义层上；
    阴电极，覆盖于所述电子传输层上。
  14. 根据权利要求13所述的有机发光显示器，其中, 所述第一堤坝和第二堤坝的高度相等，以及所述第二有机发光层和第三有机发光层的厚度相等。
  15. 根据权利要求14所述的有机发光显示器，其中，所述第一堤坝和第二堤坝的倾斜角相等且均大于所述第三堤坝的倾斜角。
  16. 根据权利要求14所述的有机发光显示器，其中，所述衬底基板的表面具有亲水性，所述第一堤坝、第二堤坝和第三堤坝的表面均具有疏水性。
  17. 根据权利要求14所述的有机发光显示器，其中，所述第一堤坝包括第一主堤坝和位于所述第一主堤坝上的第一子堤坝，所述第二堤坝包括第二主堤坝和位于所述第二主堤坝上的第二子堤坝，所述第一主堤坝、第二主堤坝和第三堤坝的高度相等。
  18. 根据权利要求17所述的有机发光显示器，其中，所述第一子堤坝和所述第二子堤坝的高度相等。
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