WO2021084778A1 - Film-like adhesive, method for evaluating ease of cutting of same, dicing/die-bonding integrated film, method for manufacturing same, and semiconductor device - Google Patents
Film-like adhesive, method for evaluating ease of cutting of same, dicing/die-bonding integrated film, method for manufacturing same, and semiconductor device Download PDFInfo
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- WO2021084778A1 WO2021084778A1 PCT/JP2020/013478 JP2020013478W WO2021084778A1 WO 2021084778 A1 WO2021084778 A1 WO 2021084778A1 JP 2020013478 W JP2020013478 W JP 2020013478W WO 2021084778 A1 WO2021084778 A1 WO 2021084778A1
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- WO
- WIPO (PCT)
- Prior art keywords
- film
- adhesive
- adhesive layer
- dicing
- sample
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 32
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
Definitions
- the present disclosure relates to a film-like adhesive and a method for evaluating its fragmentability, a dicing / die-bonding integrated film and a method for manufacturing the same, and a semiconductor device.
- Patent Document 1 discloses a dicing die bonding film having a function of fixing a semiconductor wafer in a dicing process and a function of adhering a semiconductor chip to a substrate in a dicing process.
- the semiconductor wafer and the die bonding film are separated into individual pieces to obtain a chip with an adhesive piece.
- Patent Documents 2 and 3 a method of forming a planned cutting line on the processing target by a laser and then cutting the processing target along the planned cutting line is known (see Patent Documents 2 and 3).
- the process of fragmenting the wafer in this way is called stealth dicing.
- Patent Documents 4 and 5 study the mechanical properties or thermal properties of a dicing film (adhesive layer) applied to stealth dicing.
- the present disclosure provides a method capable of evaluating the breakability of a film-like adhesive under low temperature conditions in which cooling expansion is carried out easily and with excellent reproducibility.
- the present disclosure also provides a film-like adhesive that is satisfactorily divided by cooling expand, and also provides a dicing / die-bonding integrated film provided with this as an adhesive layer, a method for producing the same, and a semiconductor device.
- the fracture coefficient m and the fracture resistance R by a fracture test (anti-folding strength test), which is a relatively simple method, under low temperature conditions (-15 ° C to 0 ° C).
- the results of the split test are highly reproducible. Therefore, even if the breakability of a plurality of film-like adhesives for which the breakability should be evaluated is not actually evaluated, the breakability of the film-like adhesive can be evaluated simply by acquiring the data of the break coefficient m and the break resistance R. can do.
- the present disclosure is provided on a base material layer, a pressure-sensitive adhesive layer having a first surface facing the base material layer and a second surface on the opposite side thereof, and a second surface of the pressure-sensitive adhesive layer.
- the present invention relates to a method for producing a dicing / die bonding integrated film including an adhesive layer.
- the splitting coefficient m is more than 0 and 70 or less.
- One aspect of the disclosure relates to film-like adhesives that can be applied to the manufacturing process of semiconductor devices in which cooling expansion is performed.
- the film-like adhesive in the cutting evaluation methods carried out under the following conditions, the cleaving factor m is greater than 0 70 or less and and fracture resistance R is less than 0N / mm 2 Ultra-40N / mm 2.
- Sample width 5 mm
- Sample length 23 mm
- Relative velocity between indentation jig and sample 10 mm / min
- this disclosure relates to a dicing / die bonding integrated film. That is, this dicing / die bonding integrated film has a base material layer, a pressure-sensitive adhesive layer having a first surface facing the base material layer and a second surface on the opposite side thereof, and a second pressure-sensitive adhesive layer. It is provided with an adhesive layer provided on the surface, and the adhesive layer is made of the film-like adhesive.
- One aspect of the present disclosure is a semiconductor device containing the film-like adhesive.
- a method capable of evaluating the breakability of a film-like adhesive under low temperature conditions in which cooling expansion is carried out easily and with excellent reproducibility Further, according to the present disclosure, a film-like adhesive that is satisfactorily divided by cooling expand is provided, and a dicing / die-bonding integrated film provided with this as an adhesive layer, a method for producing the same, and a semiconductor device are provided. Will be done.
- FIG. 1 (a) is a plan view schematically showing an embodiment of the dicing / die bonding integrated film according to the present disclosure, and FIG. 1 (b) is taken along line BB of FIG. 1 (a). It is a schematic cross-sectional view. 2 (a) and 2 (b) are cross-sectional views schematically showing a process of manufacturing a chip with an adhesive piece. 3 (a) and 3 (b) are cross-sectional views schematically showing a process of manufacturing a chip with an adhesive piece.
- FIG. 4 is a perspective view schematically showing a sample in a state of being fixed to a jig. FIG.
- FIG. 5 is a cross-sectional view schematically showing a state in which a load is applied to a sample by a pushing jig.
- FIG. 6 is a graph schematically showing an example of the result of the cutting test.
- FIG. 7 is a graph plotting the results of Examples and Comparative Examples.
- FIG. 8 is a graph plotting the results of the split test performed eight times each in Example 4 and Comparative Example 4.
- FIG. 9 is a graph showing the results of three tensile tests on a sample of a film-like adhesive in a low temperature environment.
- (meth) acrylic acid means acrylic acid or methacrylic acid
- (meth) acrylate means acrylate or the corresponding methacrylate
- a or B may include either A or B, or both.
- the term “layer” includes not only a structure having a shape formed on the entire surface but also a structure having a shape partially formed when observed as a plan view.
- the term “process” is used not only as an independent process but also as a term as long as the desired action of the process is achieved even when it cannot be clearly distinguished from other processes. included.
- the numerical range indicated by using "-” indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
- the content of each component in the composition is the total amount of the plurality of substances present in the composition unless otherwise specified, when a plurality of substances corresponding to each component are present in the composition.
- the exemplary materials may be used alone or in combination of two or more unless otherwise specified.
- the upper limit value or the lower limit value of the numerical range of one step may be replaced with the upper limit value or the lower limit value of the numerical range of another step.
- the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
- the film-like adhesive according to the present embodiment is attached to the surface F2 on the opposite side of the circuit surface F1 of the semiconductor wafer Wa in the manufacturing process of the semiconductor device (FIGS. 1 (a) and 1 (b)). reference).
- a dicing / die bonding integrated film including an adhesive layer made of a film-like adhesive will be described.
- FIG. 1A is a plan view showing a dicing / diebonding integrated film according to the present embodiment
- FIG. 1B is a schematic cross-sectional view taken along the line BB of FIG. 1A. is there.
- the dicing / die bonding integrated film 10 (hereinafter, simply referred to as “film 10” in some cases) includes a base material layer 1, a first surface 2a facing the base material layer 1, and a second surface on the opposite side thereof.
- the pressure-sensitive adhesive layer 2 having the surface 2b and the adhesive layer 5 provided so as to cover the central portion of the second surface 2b of the pressure-sensitive adhesive layer 2 are provided in this order.
- the film 10 includes a step of forming a line to be cut on the semiconductor wafer Wa by a laser, a step of separating the semiconductor wafer Wa and the adhesive layer 5 by cooling expansion thereafter, and a chip with an adhesive piece formed thereby. It is applied to the manufacturing process of a semiconductor device including a pick-up process.
- the protective film 20 is attached to the circuit surface F1 of the semiconductor wafer Wa.
- the semiconductor wafer Wa is irradiated with a laser to form a plurality of scheduled cutting lines (stealth dicing).
- the semiconductor wafer Wa is subjected to back grinding and polishing.
- the film 10 is attached so that the adhesive layer 5 is in contact with the surface F2 of the semiconductor wafer Wa.
- the dicing ring DR is attached to the second surface 2b of the pressure-sensitive adhesive layer 2. Then, the semiconductor wafer Wa and the adhesive layer 5 are separated by cooling expansion under a temperature condition of ⁇ 15 ° C. to 0 ° C.
- tension is applied to the base material layer 1 by pushing up the inner region 1a of the dicing ring DR in the base material layer 1 with the ring Ra.
- the semiconductor wafer Wa is divided along the planned cutting line, and the adhesive layer 5 is also divided accordingly, so that a plurality of chips 8 with adhesive pieces can be obtained on the surface of the adhesive layer 2.
- FIG. 3A is a cross-sectional view schematically showing how the inner region 1a is heated by blowing the heater H.
- the adhesive piece-cleaning chip 8 is pushed up with the push-up jig 42 to adhere from the adhesive layer 2.
- the tip 8 with the adhesive piece is peeled off, and the tip 8 with the adhesive piece is sucked and picked up by the suction collet 44.
- the picked-up chip 8 with an adhesive piece is conveyed to an assembly device (not shown) of a semiconductor device and crimped onto a circuit board or the like.
- the adhesive layer 5 included in the film 10 has a splitting coefficient m of more than 0 and 70 or less and a breaking resistance R of 0 N / mm 2 in a splitting property evaluation method using the results of a splitting test conducted under the following conditions. It is super 40 N / mm 2 or less.
- Sample width 5 mm
- Sample length 23 mm
- Relative velocity between indentation jig and sample 10 mm / min
- the fracture test is classified as a bending strength test, and includes a step of pushing the central part of the sample until the sample breaks with both ends fixed.
- the sample S is subjected to a cutting test in a state of being sandwiched and fixed between a pair of jigs 12 and 12.
- the pair of jigs 12, 12 are made of, for example, thick paper having sufficient strength, and each has a rectangular opening 12a in the center.
- a load is applied to the central portion of the sample S in the fixed state by the pushing jig 15 (see FIG. 5).
- the sample S may be any one obtained by cutting out a film-like adhesive to be evaluated, and it is not necessary to prepare a sample by laminating a plurality of adhesive pieces cut out from the film-like adhesive. That is, the thickness of the sample S may be the same as the thickness of the film-like adhesive.
- the width of the sample S (Ws in FIG. 4) is, for example, 1 to 30 mm and may be 3 to 8 mm. The width may be set to an appropriate level according to the situation of the measuring device.
- the length of the sample S (Ls in FIG. 3) is, for example, 5 to 50 mm, and may be 10 to 30 mm or 6 to 9 mm. The length of the sample S depends on the size of the opening 12a of the jig 12. The shape of the jig 12 and the size of the sample S may be other than those described above as long as the cutting test can be performed.
- the push jig 15 is made of a columnar member having a conical tip portion 15a.
- the diameter of the push jig 15 (R in FIG. 5) is, for example, 3 to 15 mm, and may be 5 to 10 mm.
- the angle of the tip portion 15a ( ⁇ in FIG. 5) is, for example, 40 to 120 °, and may be 60 to 100 °.
- the split test is carried out in a constant temperature bath set to a predetermined temperature.
- the constant temperature bath may be set to a constant temperature in the range of ⁇ 15 ° C. to 0 ° C. (assumed cooling expand temperature).
- As the constant temperature bath for example, TLF-R3-F-W-PL-S manufactured by Aitec Co., Ltd. can be used.
- An autograph for example, AZT-CA01 manufactured by A & D Co., Ltd., load cell 50N, compression mode) is used to obtain a breaking work W, a breaking strength P, and a breaking elongation L.
- the relative speed between the pushing jig 15 and the sample S is, for example, 1 to 100 mm / min, and may be 5 to 20 mm / min. If this relative velocity is too fast, it tends to be difficult to obtain sufficient data on the breaking process, and if it is too slow, the stress is relaxed and it tends to be difficult to reach breaking.
- the pushing distance of the jig 15 is, for example, 1 to 50 mm, and may be 5 to 30 mm. If the pushing distance is too short, it tends not to be cut.
- FIG. 6 is a graph showing an example of the result of the cutting test.
- the cutting work W is an area surrounded when a graph is created with the vertical axis as the load and the horizontal axis as the amount of pushing until the sample S breaks.
- the breaking strength P is the load when the sample S is broken.
- the split elongation L is the amount of elongation of the sample S when the sample S is broken.
- the split elongation L may be calculated by using a trigonometric function from the pushing distance when the sample S is broken and the width of the opening 12a of the jig 12.
- the split coefficient m (dimensionless) is more than 0 and 70 or less, preferably 10 to 60, and more preferably 15 to 55.
- the split coefficient m is a parameter relating to the stretchability of the film-like adhesive under low temperature conditions.
- the splitting coefficient m exceeds 70, the splitting property becomes insufficient due to the excessive stretchability of the film-like adhesive.
- the split coefficient m is 15 or more, the stress propagation property is good.
- Fracture resistance R as described above, 0N / mm 2 Ultra-40N / mm 2 or less, preferably not more than 0N / mm 2 Ultra-35N / mm 2, more preferably 1 ⁇ 30N / mm 2.
- breaking resistance R exceeds 40 N / mm 2 , the breaking property becomes insufficient due to the excessive strength of the film-like adhesive.
- the breaking resistance R is 20 N / mm 2 or more, even better breakability can be obtained by good stress propagation in low temperature expanding. Stealth dicing can be satisfactorily performed by selecting a film-like adhesive having a breaking coefficient m and a breaking resistance R in the above ranges.
- the film-like adhesive will be described below.
- an adhesive containing an epoxy resin, an epoxy resin curing agent, and a (meth) acrylic copolymer having an epoxy group will be described.
- the film-like adhesive containing these components has excellent adhesiveness between the chip and the substrate and between the chip and the chip. Further, it is possible to impart electrode embedding property, wire embedding property, and the like to this film-like adhesive, and it is also possible to impart adhesiveness at a low temperature in the die bonding step.
- epoxy resin examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, and bisphenol F novolac type epoxy resin.
- Dicyclopentadiene skeleton-containing epoxy resin Dicyclopentadiene skeleton-containing epoxy resin, stillben-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylylene-type epoxy resin, biphenyl-aralkyl-type epoxy resin, Examples thereof include naphthalene-type epoxy resins, polyfunctional phenols, and polycyclic aromatic diglycidyl ether compounds such as anthracene. These may be used individually by 1 type or in combination of 2 or more type.
- the epoxy resin curing agent may be, for example, a phenol resin.
- the phenol resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
- examples of the phenol resin include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene, and formaldehyde and the like.
- Phenols such as novolak type phenol resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, and phenol obtained by condensing or cocondensing with a compound having an aldehyde group of
- a phenol aralkyl resin synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, a naphthol aralkyl resin, and the like can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
- the (meth) acrylic copolymer having an epoxy group may be a copolymer prepared by adjusting glycidyl (meth) acrylate as a raw material in an amount of 0.5 to 6% by mass with respect to the obtained copolymer. ..
- the balance of the glycidyl (meth) acrylate may be an alkyl (meth) acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl (meth) acrylate, and a mixture of styrene, acrylonitrile and the like.
- the alkyl (meth) acrylate may include ethyl (meth) acrylate and / or butyl (meth) acrylate.
- the mixing ratio of each component can be adjusted in consideration of the Tg (glass transition point) of the obtained (meth) acrylic copolymer having an epoxy group.
- Tg glass transition point
- the upper limit of Tg of the (meth) acrylic copolymer having an epoxy group may be, for example, 30 ° C.
- the weight average molecular weight of the (meth) acrylic copolymer having an epoxy group may be 100,000 or more, and may be 300,000 to 3 million or 500,000 to 2 million. When the weight average molecular weight is 3 million or less, it tends to be possible to control the decrease in the filling property between the semiconductor chip and the support substrate.
- the weight average molecular weight is a polystyrene-equivalent value using a calibration curve made of standard polystyrene by gel permeation chromatography (GPC).
- the curing accelerator may further contain a curing accelerator such as a tertiary amine, imidazoles, or a quaternary ammonium salt, if necessary.
- a curing accelerator such as a tertiary amine, imidazoles, or a quaternary ammonium salt, if necessary.
- the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used individually by 1 type or in combination of 2 or more type.
- the film-like adhesive may further contain an inorganic filler, if necessary.
- the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, and crystalline material.
- examples include silica and amorphous silica. These may be used individually by 1 type or in combination of 2 or more type.
- the film-like adhesive is obtained by dissolving or dispersing the above components in a solvent to form a varnish, applying it on a support, heating it, and removing the solvent.
- a plastic film such as polytetrafluoroethylene, polyethylene terephthalate, polyethylene, polypropylene, polymethylpentene, or polyimide can be used, and these supports can also be used by releasing the surface. it can.
- the solvent is not particularly limited, but in consideration of volatility during film production, methanol, ethanol, 2-methoxyethanol, 2-butoxyethanol, methylethylketone, acetone, methylisobutylketone, 2-ethoxyethanol, toluene, xylene. It is preferable to use a solvent having a relatively low boiling point such as. Further, in order to improve the coating film property, a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone and cyclohexanone can be added.
- varnish containing an inorganic filler it is preferable to use a raker, a three-roll, a ball mill, a bead mill, etc. in consideration of the dispersibility of the inorganic filler, and these can also be used in combination. Further, by mixing the inorganic filler and the low molecular weight substance in advance and then blending the high molecular weight substance, it is possible to shorten the mixing time. Further, after the varnish is formed, air bubbles in the varnish can be removed by vacuum degassing or the like.
- a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method.
- the adhesive layer 5 formed on the support may be attached to the pressure-sensitive adhesive layer 2 by hot roll laminating, or the adhesive layer 5 may be formed on the surface of the pressure-sensitive adhesive layer 2 by printing.
- the thickness of the film-like adhesive is not particularly limited, but is preferably 3 to 150 ⁇ m, more preferably 4 to 140 ⁇ m, and even more preferably 5 to 135 ⁇ m. If the thickness of the film-like adhesive (thickness of sample S) is 3 ⁇ m or less, the breaking strength P tends to be too small and the data stability tends to be insufficient, and if it exceeds 150 ⁇ m, the sample S tends to be insufficient. Data tends to be inadequate due to difficulty in installation. From the viewpoint of data stability and handling, the thickness of the film-like adhesive is particularly preferably about 3 to 135 ⁇ m.
- the cutting work W (N ⁇ mm) can be adjusted by, for example, increasing or decreasing the content of the (meth) acrylic copolymer.
- the breaking strength P (N) can be adjusted, for example, by increasing or decreasing the content of the inorganic filler.
- the split elongation L (mm) can be adjusted, for example, by increasing or decreasing the content of the (meth) acrylic copolymer.
- the base material layer 1 and the pressure-sensitive adhesive layer 2 included in the film 10 are also referred to as a dicing film.
- the base material layer 1 is made of, for example, a plastic film such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, or a polyimide film.
- the surface of the base material layer 1 may be subjected to surface treatment such as primer coating, ⁇ V treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary.
- the thickness of the base material layer 1 is, for example, 60 to 150 ⁇ m, preferably 70 to 130 ⁇ m. As the base material layer 1, a material that does not break during cooling expansion is applied.
- the pressure-sensitive adhesive layer 2 may be, for example, a pressure-sensitive type or an ultraviolet curable type. It is preferable that the pressure-sensitive adhesive layer 2 has a pressure-sensitive adhesive force so that the adhesive chip 8 does not scatter during cooling expansion, and has excellent peelability in the subsequent pick-up step.
- the dicing / die bonding integrated film 10 including the film-like adhesive as the adhesive layer 5 is exemplified, but the film-like adhesive may be used alone.
- a dicing / die-bonding integrated film having a film-like adhesive according to Examples and Comparative Examples described later as an adhesive layer was prepared. Then, the fragmentability of the adhesive layer was evaluated under the following conditions. ⁇ Thickness of silicon wafer: 30 ⁇ m ⁇ Chip size that is separated by stealth dicing: length 10 mm x width 10 mm ⁇ Temperature of cooling expand: Same temperature as the constant temperature bath of the split test of Examples and Comparative Examples ⁇ Push-up by the expansion ring: 10 mm -Evaluation criteria: The silicon wafer after being pushed up by the expanding ring was irradiated with light.
- the one through which light passes between adjacent chips with adhesive pieces (the one in which the silicon wafer and the adhesive layer are divided) is designated as "A", and the one in which light does not pass (the one in which the silicon wafer and the adhesive layer are divided). Those that have not been) are designated as "B".
- Example 1 A composition containing the following components was prepared.
- [Epoxy resin] -O-cresol novolac type epoxy resin manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent 210 g / eq, softening point 80 ° C.
- 22 parts by mass-bisphenol F type epoxy resin (DIC) Made by Co., Ltd., trade name EXA-830CRP, epoxy equivalent 160 g / eq, liquid at 25 ° C): 20 parts by mass [epoxy resin curing agent] -Phenol resin (manufactured by Mitsui Chemicals, Inc., trade name: XLC-LL, softening point: 75 ° C.): 32 parts by mass [silane coupling agent] ⁇ 3-Mercaptopropyltrimethoxysilane (manufactured by Momentive Performance Materials Japan GK, trade
- curing accelerator (1-cyanoethyl-2-phenylimidazole, Shikoku Kasei Kogyo Co., Ltd., trade name: 2PZ-CN) : 0.1 parts by mass
- Example 2 A film-like adhesive was obtained in the same manner as in Example 1 except that the thickness was 50 ⁇ m instead of 60 ⁇ m. The breakability of this film-like adhesive was evaluated at a temperature of 0 ° C. The results are shown in Table 1.
- Example 3 A composition containing the following components was prepared.
- [Epoxy resin] -O-Cresol novolac type epoxy resin manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent 210 g / eq, softening point 80 ° C.
- 6 parts by mass [epoxy resin curing agent]
- -Phenol resin manufactured by Air Water Co., Ltd., product name: SK resin-HE100-C
- 3 parts by mass-Phenol resin manufactured by Nippon Kayaku Co., Ltd., product name: GPH-103
- 3 parts by mass [silane cup Ring agent] -3-Mercaptopropyltrimethoxysilane manufactured by Momentive Performance Materials Japan GK, trade name: A-189): 0.5 parts by mass-Phenylaminopropyltrimethoxysilane (Momentive Performance Materials
- curing accelerator (1-cyanoethyl-2-phenylimidazole, Shikoku Kasei Kogyo Co., Ltd., trade name: 2PZ-CN) : 0.01 parts by mass
- Example 4 A film-like adhesive was obtained in the same manner as in Example 3 except that the thickness was 20 ⁇ m instead of 7 ⁇ m. The breakability of this film-like adhesive was evaluated at a temperature of ⁇ 10 ° C. The results are shown in Table 1.
- curing accelerator (1-cyanoethyl-2-phenylimidazole, Shikoku Kasei Kogyo Co., Ltd., trade name: 2PZ-CN) : 0.01 parts by mass
- curing accelerator (1-cyanoethyl-2-phenylimidazole, Shikoku Kasei Kogyo Co., Ltd., trade name: 2PZ-CN) : 0.03 parts by mass
- Comparative Example 3 The breakability of the film-like adhesive (thickness 7 ⁇ m) obtained in the same manner as in Comparative Example 1 was evaluated at a temperature of ⁇ 10 ° C. The results are shown in Table 2.
- Comparative Example 4 A film-like adhesive was obtained in the same manner as in Comparative Example 1, except that the thickness was 20 ⁇ m instead of 7 ⁇ m. The breakability of this film-like adhesive was evaluated at a temperature of ⁇ 10 ° C. The results are shown in Table 2.
- FIG. 7 is a graph plotting the results of Examples and Comparative Examples.
- FIG. 8 is a graph plotting the results of the split test performed eight times each in Example 4 and Comparative Example 4. From this graph, it can be said that the reproducibility of the above-mentioned cutting test is sufficiently high.
- FIG. 9 is a graph showing the results of three tensile tests on a sample of a film-like adhesive (width 10 mm ⁇ length 100 mm ⁇ thickness 60 ⁇ m) at a temperature of ⁇ 15 ° C. As shown in FIG. 9, in the conventional low-temperature tensile test, there is a large variation between tests, and it is difficult to evaluate the breakability of the film-like adhesive from this result.
- a method capable of evaluating the breakability of a film-like adhesive under low temperature conditions in which cooling expansion is carried out easily and with excellent reproducibility Further, according to the present disclosure, a film-like adhesive that is satisfactorily divided by cooling expand is provided, and a dicing / die-bonding integrated film provided with this as an adhesive layer, a method for producing the same, and a semiconductor device are provided. Will be done.
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Abstract
Description
m=W/[1000×(P×L)]・・・(1)
R=P/A・・・(2) One aspect of the present disclosure is a method for evaluating the breakability of a film-like adhesive under low temperature conditions in which cooling expansion is carried out. This splitting property evaluation method includes a step of preparing a sample having a cross-sectional area A (mm 2 ) from a film-like adhesive and a splitting test of the sample under low temperature conditions in the range of -15 ° C. to 0 ° C. W (N). -Mm), the step of obtaining the breaking strength P (N) and the breaking elongation L (mm), the step of obtaining the breaking coefficient m represented by the following formula (1), and the breaking resistance represented by the following formula (2). It includes a step of obtaining R (N / mm 2).
m = W / [1000 × (P × L)] ・ ・ ・ (1)
R = P / A ... (2)
<条件>
試料の幅:5mm
試料の長さ:23mm
押し込み冶具と試料の相対速度:10mm/分 One aspect of the present disclosure is provided on a base material layer, a pressure-sensitive adhesive layer having a first surface facing the base material layer and a second surface on the opposite side thereof, and a second surface of the pressure-sensitive adhesive layer. The present invention relates to a method for producing a dicing / die bonding integrated film including an adhesive layer. In this production method, in the step of preparing a dicing film which is a laminate of the base material layer and the pressure-sensitive adhesive layer and the above-mentioned fragmentability evaluation method carried out under the following conditions, the splitting coefficient m is more than 0 and 70 or less. and fracture resistance R to form a step of selecting a film-like adhesive or less 0N / mm 2 ultra-40N / mm 2, the surface of the pressure-sensitive adhesive layer side of the adhesive layer of a dicing film comprising the film-like adhesive Including the process.
<Conditions>
Sample width: 5 mm
Sample length: 23 mm
Relative velocity between indentation jig and sample: 10 mm / min
<条件>
試料の幅:5mm
試料の長さ:23mm
押し込み冶具と試料の相対速度:10mm/分 One aspect of the disclosure relates to film-like adhesives that can be applied to the manufacturing process of semiconductor devices in which cooling expansion is performed. The film-like adhesive, in the cutting evaluation methods carried out under the following conditions, the cleaving factor m is greater than 0 70 or less and and fracture resistance R is less than 0N / mm 2 Ultra-40N / mm 2.
<Conditions>
Sample width: 5 mm
Sample length: 23 mm
Relative velocity between indentation jig and sample: 10 mm / min
<条件>
試料の幅:5mm
試料の長さ:23mm
押し込み冶具と試料の相対速度:10mm/分 The
<Conditions>
Sample width: 5 mm
Sample length: 23 mm
Relative velocity between indentation jig and sample: 10 mm / min
m=W/[1000×(P×L)]・・・(1)
R=P/A・・・(2) From the values of the breaking work W (N ・ mm), the breaking strength P (N) and the breaking elongation L (mm) obtained by the breaking test, the breaking coefficient m (dimensionless) and the breaking coefficient m (dimensionless) from the equations (1) and (2). The breaking resistance R (N / mm 2 ) is obtained.
m = W / [1000 × (P × L)] ・ ・ ・ (1)
R = P / A ... (2)
<条件>
試料の幅:5mm
試料の長さ:23mm
押し込み冶具と試料の相対速度:10mm/分 According to the study of the present inventors, when carrying out the fracture test under the following conditions, and the cleaving factor m is greater than 0 70 or less and fracture resistance R 0N / mm 2 Ultra-40N / mm 2 or less is filmy The adhesive has excellent splittability when actually cooled and expanded in stealth dicing.
<Conditions>
Sample width: 5 mm
Sample length: 23 mm
Relative velocity between indentation jig and sample: 10 mm / min
後述の実施例及び比較例に係るフィルム状接着剤から接着剤片(幅5mm×長さ100mm)を切り出した。接着剤片を一対の冶具(厚紙)に固定するとともに、冶具からはみ出している接着剤片の箇所を除去した。これにより、評価対象の試料(幅5mm×長さ23mm)を得た。所定の温度条件に設定された恒温槽(株式会社アイテック社製、TLF-R3-F-W-PL-S)内において割断試験を実施した。すなわち、オートグラフ(株式会社エーアンドデイ社製、AZT-CA01、ロードセル50N)を用いて圧縮モード、速度10mm/分、押し込み距離5mmの条件で割断試験を実施し、フィルム状接着剤が破断したときの割断仕事W、割断強度P及び割断伸びLを求めた。上記の式(1)及び式(2)により、割断係数m及び割断抵抗Rを算出した。なお、各実施例及び各比較例について8回以上の割断試験を実施した。表1,2に記載の値は複数回の割断試験によって得られた結果の平均値である。 <Evaluation of breakability of film-like adhesive>
An adhesive piece (
・シリコンウェハの厚さ:30μm
・ステルスダイシングによって個片化するチップサイズ:縦10mm×横10mm
・冷却エキスパンドの温度:実施例及び比較例の割断試験の恒温槽と同じ温度
・エキスパンド用リングによる突き上げ:10mm
・評価基準:エキスパンド用リングによる突き上げ後のシリコンウェハに光を照射した。隣接する接着剤片付きチップの間を光が通るもの(シリコンウェハ及び接着剤層が分断されているもの)を「A」とし、光が通らない領域があるもの(シリコンウェハ及び接着剤層が分断されていないもの)を「B」とした。 In order to confirm that the above-mentioned fragmentability evaluation matches the fragmentability in the cooling expand, a dicing / die-bonding integrated film having a film-like adhesive according to Examples and Comparative Examples described later as an adhesive layer was prepared. Then, the fragmentability of the adhesive layer was evaluated under the following conditions.
・ Thickness of silicon wafer: 30 μm
・ Chip size that is separated by stealth dicing:
・ Temperature of cooling expand: Same temperature as the constant temperature bath of the split test of Examples and Comparative Examples ・ Push-up by the expansion ring: 10 mm
-Evaluation criteria: The silicon wafer after being pushed up by the expanding ring was irradiated with light. The one through which light passes between adjacent chips with adhesive pieces (the one in which the silicon wafer and the adhesive layer are divided) is designated as "A", and the one in which light does not pass (the one in which the silicon wafer and the adhesive layer are divided). Those that have not been) are designated as "B".
(実施例1)
以下の成分を含む組成物を調製した。
[エポキシ樹脂]
・o-クレゾールノボラック型エポキシ樹脂(新日鐵住金化学株式会社製、商品名:YDCN-700-10、エポキシ当量210g/eq、軟化点80℃):22質量部
・ビスフェノールF型エポキシ樹脂(DIC株式会社製、商品名EXA-830CRP、エポキシ当量160g/eq、25℃で液状):20質量部
[エポキシ樹脂硬化剤]
・フェノール樹脂(三井化学株式会社製、商品名:XLC-LL、軟化点:75℃):32質量部
[シランカップリング剤]
・3-メルカプトプロピルトリメトキシシラン(モーメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、商品名:A-189):0.1質量部
・3-ウレイドプロピルトリエトキシシラン(モーメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、商品名:A-1160):0.3質量部
[フィラー]
・シリカ(株式会社アドマテックス製):41質量部
[溶剤]
・シクロヘキサノン <Making a film-like adhesive>
(Example 1)
A composition containing the following components was prepared.
[Epoxy resin]
-O-cresol novolac type epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent 210 g / eq, softening
-Phenol resin (manufactured by Mitsui Chemicals, Inc., trade name: XLC-LL, softening point: 75 ° C.): 32 parts by mass [silane coupling agent]
・ 3-Mercaptopropyltrimethoxysilane (manufactured by Momentive Performance Materials Japan GK, trade name: A-189): 0.1 parts by mass ・ 3-Ureidopropyltriethoxysilane (Momentive Performance Material) Made by Z Japan GK, Product name: A-1160): 0.3 parts by mass [Filler]
-Silica (manufactured by Admatex Co., Ltd.): 41 parts by mass [solvent]
・ Cyclohexanone
・アクリルゴム(ナガセケムテックス株式会社製、商品名:HTR-860P-3、重量平均分子量80万、ブチルアクリレート/エチルアクリレート/アクリロニトリル/グリシジルメタクリレート(質量比)=38.6/28.7/29.7/3.0、グリシジル基含有反復単位:3.0質量%):23質量部
・硬化促進剤(1-シアノエチル-2-フェニルイミダゾール、四国化成工業株式会社、商品名:2PZ-CN):0.1質量部 The following components were further added to the above composition and mixed, and then vacuum degassed to prepare a varnish for a film-like adhesive.
-Acrylic rubber (manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-3, weight average molecular weight 800,000, butyl acrylate / ethyl acrylate / acrylonitrile / glycidyl methacrylate (mass ratio) = 38.6 / 28.7 / 29 .7 / 3.0, glycidyl group-containing repeating unit: 3.0% by mass): 23 parts by mass, curing accelerator (1-cyanoethyl-2-phenylimidazole, Shikoku Kasei Kogyo Co., Ltd., trade name: 2PZ-CN) : 0.1 parts by mass
厚さを60μmとする代わりに50μmとしたことの他は、実施例1と同様にしてフィルム状接着剤を得た。このフィルム状接着剤の分断性を温度0℃において評価した。表1に結果を示す。 (Example 2)
A film-like adhesive was obtained in the same manner as in Example 1 except that the thickness was 50 μm instead of 60 μm. The breakability of this film-like adhesive was evaluated at a temperature of 0 ° C. The results are shown in Table 1.
以下の成分を含む組成物を調製した。
[エポキシ樹脂]
・o-クレゾールノボラック型エポキシ樹脂(新日鐵住金化学株式会社製、商品名:YDCN-700-10、エポキシ当量210g/eq、軟化点80℃):6質量部
[エポキシ樹脂硬化剤]
・フェノール樹脂(エア・ウォータ株式会社製、商品名:SKレジン-HE100-C):3質量部
・フェノール樹脂(日本化薬株式会社製、商品名:GPH-103):3質量部
[シランカップリング剤]
・3-メルカプトプロピルトリメトキシシラン(モーメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、商品名:A-189):0.5質量部
・フェニルアミノプロピルトリメトキシシラン(モーメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、商品名:Y9669):1質量部
[フィラー]
・シリカ(株式会社アドマテックス製):30質量部
[溶剤]
・シクロヘキサノン (Example 3)
A composition containing the following components was prepared.
[Epoxy resin]
-O-Cresol novolac type epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent 210 g / eq, softening
-Phenol resin (manufactured by Air Water Co., Ltd., product name: SK resin-HE100-C): 3 parts by mass-Phenol resin (manufactured by Nippon Kayaku Co., Ltd., product name: GPH-103): 3 parts by mass [silane cup Ring agent]
-3-Mercaptopropyltrimethoxysilane (manufactured by Momentive Performance Materials Japan GK, trade name: A-189): 0.5 parts by mass-Phenylaminopropyltrimethoxysilane (Momentive Performance Materials) -Manufactured by Japan GK, product name: Y9669): 1 part by mass [filler]
-Silica (manufactured by Admatex Co., Ltd.): 30 parts by mass [solvent]
・ Cyclohexanone
・アクリルゴム(ナガセケムテックス株式会社製、商品名:HTR-860P-3、重量平均分子量80万、ブチルアクリレート/エチルアクリレート/アクリロニトリル/グリシジルメタクリレート(質量比)=38.6/28.7/29.7/3.0、グリシジル基含有反復単位:3.0質量%):57質量部
・硬化促進剤(1-シアノエチル-2-フェニルイミダゾール、四国化成工業株式会社、商品名:2PZ-CN):0.01質量部 The following components were further added to the above composition and mixed, and then vacuum degassed to prepare a varnish for a film-like adhesive.
-Acrylic rubber (manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-3, weight average molecular weight 800,000, butyl acrylate / ethyl acrylate / acrylonitrile / glycidyl methacrylate (mass ratio) = 38.6 / 28.7 / 29 .7 / 3.0, glycidyl group-containing repeating unit: 3.0% by mass): 57 parts by mass, curing accelerator (1-cyanoethyl-2-phenylimidazole, Shikoku Kasei Kogyo Co., Ltd., trade name: 2PZ-CN) : 0.01 parts by mass
厚さを7μmとする代わりに20μmとしたことの他は、実施例3と同様にしてフィルム状接着剤を得た。このフィルム状接着剤の分断性を温度-10℃において評価した。表1に結果を示す。 (Example 4)
A film-like adhesive was obtained in the same manner as in Example 3 except that the thickness was 20 μm instead of 7 μm. The breakability of this film-like adhesive was evaluated at a temperature of −10 ° C. The results are shown in Table 1.
以下の成分を含む組成物を調製した。
[エポキシ樹脂]
・o-クレゾールノボラック型エポキシ樹脂(新日鐵住金化学株式会社製、商品名:YDCN-700-10、エポキシ当量210g/eq、軟化点80℃):7質量部
[エポキシ樹脂硬化剤]
・フェノール樹脂(三井化学株式会社製、商品名:XLC-LL、軟化点:75℃):3質量部
[エポキシ樹脂硬化剤]
・フェノール樹脂(日本化薬株式会社製、商品名:GPH-103):4質量部
[シランカップリング剤]
・3-メルカプトプロピルトリメトキシシラン(モーメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、商品名:A-189):0.4質量部
・フェニルアミノプロピルトリメトキシシラン(モーメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、商品名:Y9669):1質量部
[フィラー]
・シリカ(株式会社アドマテックス製):16質量部
[溶剤]
・シクロヘキサノン (Comparative Example 1)
A composition containing the following components was prepared.
[Epoxy resin]
-O-Cresol novolac type epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent 210 g / eq, softening
-Phenol resin (manufactured by Mitsui Chemicals, Inc., trade name: XLC-LL, softening point: 75 ° C.): 3 parts by mass [epoxy resin curing agent]
-Phenol resin (manufactured by Nippon Kayaku Co., Ltd., trade name: GPH-103): 4 parts by mass [silane coupling agent]
-3-Mercaptopropyltrimethoxysilane (manufactured by Momentive Performance Materials Japan GK, trade name: A-189): 0.4 parts by mass-Phenylaminopropyltrimethoxysilane (Momentive Performance Materials) -Manufactured by Japan GK, product name: Y9669): 1 part by mass [filler]
-Silica (manufactured by Admatex Co., Ltd.): 16 parts by mass [solvent]
・ Cyclohexanone
・アクリルゴム(ナガセケムテックス株式会社製、商品名:HTR-860P-3、重量平均分子量80万、ブチルアクリレート/エチルアクリレート/アクリロニトリル/グリシジルメタクリレート(質量比)=38.6/28.7/29.7/3.0、グリシジル基含有反復単位:3.0質量%):68質量部
・硬化促進剤(1-シアノエチル-2-フェニルイミダゾール、四国化成工業株式会社、商品名:2PZ-CN):0.01質量部 The following components were further added to the above composition and mixed, and then vacuum degassed to prepare a varnish for a film-like adhesive.
-Acrylic rubber (manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-3, weight average molecular weight 800,000, butyl acrylate / ethyl acrylate / acrylonitrile / glycidyl methacrylate (mass ratio) = 38.6 / 28.7 / 29 .7 / 3.0, glycidyl group-containing repeating unit: 3.0% by mass): 68 parts by mass, curing accelerator (1-cyanoethyl-2-phenylimidazole, Shikoku Kasei Kogyo Co., Ltd., trade name: 2PZ-CN) : 0.01 parts by mass
以下の成分を含む組成物を調製した。
[エポキシ樹脂]
・o-クレゾールノボラック型エポキシ樹脂(新日鐵住金化学株式会社製、商品名:YDCN-700-10、エポキシ当量210g/eq、軟化点80℃):13質量部
[エポキシ樹脂硬化剤]
・フェノール樹脂(三井化学株式会社製、商品名:XLC-LL、軟化点:75℃):11質量部
[シランカップリング剤]
・3-メルカプトプロピルトリメトキシシラン(モーメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、商品名:A-189):0.4質量部
・3-ウレイドプロピルトリエトキシシラン(モーメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、商品名:A-1160):1質量部
[フィラー]
・シリカ(日本アエロジル株式会社製):8質量部
[溶剤]
・シクロヘキサノン (Comparative Example 2)
A composition containing the following components was prepared.
[Epoxy resin]
-O-Cresol novolac type epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., trade name: YDCN-700-10, epoxy equivalent 210 g / eq, softening
-Phenol resin (manufactured by Mitsui Chemicals, Inc., trade name: XLC-LL, softening point: 75 ° C.): 11 parts by mass [silane coupling agent]
・ 3-Mercaptopropyltrimethoxysilane (manufactured by Momentive Performance Materials Japan GK, trade name: A-189): 0.4 parts by mass ・ 3-Ureidopropyltriethoxysilane (Momentive Performance Material) Made by Z Japan GK, Product Name: A-1160): 1 part by mass [Filler]
-Silica (manufactured by Nippon Aerosil Co., Ltd.): 8 parts by mass [solvent]
・ Cyclohexanone
・アクリルゴム(ナガセケムテックス株式会社製、商品名:HTR-860P-3、重量平均分子量80万、ブチルアクリレート/エチルアクリレート/アクリロニトリル/グリシジルメタクリレート(質量比)=38.6/28.7/29.7/3.0、グリシジル基含有反復単位:3.0質量%):66質量部
・硬化促進剤(1-シアノエチル-2-フェニルイミダゾール、四国化成工業株式会社、商品名:2PZ-CN):0.03質量部 The following components were further added to the above composition and mixed, and then vacuum degassed to prepare a varnish for a film-like adhesive.
-Acrylic rubber (manufactured by Nagase ChemteX Corporation, trade name: HTR-860P-3, weight average molecular weight 800,000, butyl acrylate / ethyl acrylate / acrylonitrile / glycidyl methacrylate (mass ratio) = 38.6 / 28.7 / 29 .7 / 3.0, glycidyl group-containing repeating unit: 3.0% by mass): 66 parts by mass, curing accelerator (1-cyanoethyl-2-phenylimidazole, Shikoku Kasei Kogyo Co., Ltd., trade name: 2PZ-CN) : 0.03 parts by mass
比較例1と同様にして得たフィルム状接着剤(厚さ7μm)の分断性を温度-10℃において評価した。表2に結果を示す。 (Comparative Example 3)
The breakability of the film-like adhesive (
厚さを7μmとする代わりに20μmとしたことの他は、比較例1と同様にしてフィルム状接着剤を得た。このフィルム状接着剤の分断性を温度-10℃において評価した。表2に結果を示す。 (Comparative Example 4)
A film-like adhesive was obtained in the same manner as in Comparative Example 1, except that the thickness was 20 μm instead of 7 μm. The breakability of this film-like adhesive was evaluated at a temperature of −10 ° C. The results are shown in Table 2.
Claims (5)
- 冷却エキスパンドが実施される低温条件下におけるフィルム状接着剤の分断性評価方法であって、
フィルム状接着剤から断面積A(mm2)の試料を準備する工程と、
-15℃~0℃の範囲の低温条件下において割断試験によって前記試料の割断仕事W(N・mm)、割断強度P(N)及び割断伸びL(mm)を求める工程と、
下記式(1)で表される割断係数mを求める工程と、
下記式(2)で表される割断抵抗R(N/mm2)を求める工程と、
を含む、分断性評価方法。
m=W/[1000×(P×L)]・・・(1)
R=P/A・・・(2) It is a method for evaluating the fragmentation property of a film-like adhesive under low temperature conditions in which cooling expansion is carried out.
The process of preparing a sample with a cross-sectional area A (mm 2) from a film-like adhesive, and
A step of obtaining the breaking work W (N · mm), breaking strength P (N), and breaking elongation L (mm) of the sample by a breaking test under a low temperature condition in the range of -15 ° C to 0 ° C.
The process of obtaining the split coefficient m represented by the following equation (1) and
The process of obtaining the breaking resistance R (N / mm 2) represented by the following formula (2) and
Dividability evaluation method including.
m = W / [1000 × (P × L)] ・ ・ ・ (1)
R = P / A ... (2) - 基材層と、前記基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、前記粘着剤層の前記第2の面上に設けられた接着剤層とを備えるダイシング・ダイボンディング一体型フィルムの製造方法であって、
基材層と粘着剤層の積層体であるダイシングフィルムを準備する工程と、
以下の条件下で実施される請求項1に記載の分断性評価方法において、割断係数mが0超70以下であり且つ割断抵抗Rが0N/mm2超40N/mm2以下であるフィルム状接着剤を選定する工程と、
前記フィルム状接着剤からなる接着剤層を前記ダイシングフィルムの前記粘着剤層側の表面に形成する工程と、
を含むダイシング・ダイボンディング一体型フィルムの製造方法。
<条件>
試料の幅:5mm
試料の長さ:23mm
押し込み冶具と試料の相対速度:10mm/分 An adhesive layer having a base material layer, a first surface facing the base material layer and a second surface opposite to the base material layer, and an adhesive layer provided on the second surface of the pressure-sensitive adhesive layer. This is a method for manufacturing a dicing / die bonding integrated film.
The process of preparing a dicing film, which is a laminate of a base material layer and an adhesive layer,
In cutting evaluation method according to claim 1 which is carried out under the following conditions, the film-like adhesive cleaving factor m is greater than 0 70 or less and and fracture resistance R is less than 0N / mm 2 Ultra-40N / mm 2 The process of selecting an agent and
A step of forming an adhesive layer made of the film-like adhesive on the surface of the dicing film on the side of the adhesive layer, and
A method for manufacturing a dicing / die bonding integrated film including.
<Conditions>
Sample width: 5 mm
Sample length: 23 mm
Relative velocity between indentation jig and sample: 10 mm / min - 冷却エキスパンドが実施される半導体装置の製造プロセスに適用さえるフィルム状接着剤であって、
以下の条件下で実施される請求項1に記載の分断性評価方法において、割断係数mが0超70以下であり且つ割断抵抗Rが0N/mm2超40N/mm2以下であるフィルム状接着剤。
<条件>
試料の幅:5mm
試料の長さ:23mm
押し込み冶具と試料の相対速度:10mm/分 A film-like adhesive that can be applied to the manufacturing process of semiconductor devices for which cooling expansion is carried out.
In cutting evaluation method according to claim 1 which is carried out under the following conditions, the film-like adhesive cleaving factor m is greater than 0 70 or less and and fracture resistance R is less than 0N / mm 2 Ultra-40N / mm 2 Agent.
<Conditions>
Sample width: 5 mm
Sample length: 23 mm
Relative velocity between indentation jig and sample: 10 mm / min - 基材層と、
前記基材層と対面する第1の面及びその反対側の第2の面を有する粘着剤層と、
前記粘着剤層の前記第2の面上に設けられた接着剤層と、
を備え、
前記接着剤層が請求項3に記載のフィルム状接着剤からなる、ダイシング・ダイボンディング一体型フィルム。 Base layer and
An adhesive layer having a first surface facing the base material layer and a second surface opposite to the first surface, and a pressure-sensitive adhesive layer.
An adhesive layer provided on the second surface of the pressure-sensitive adhesive layer and
With
A dicing / die bonding integrated film in which the adhesive layer comprises the film-like adhesive according to claim 3. - 請求項3に記載のフィルム状接着剤を含む、半導体装置。 A semiconductor device including the film-like adhesive according to claim 3.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021554056A JP7476903B2 (en) | 2019-10-28 | 2020-03-25 | Film-like adhesive and method for evaluating severability thereof, integrated dicing/die bonding film and method for manufacturing the same, and semiconductor device |
KR1020227014434A KR20220088866A (en) | 2019-10-28 | 2020-03-25 | Film adhesive and its parting property evaluation method, dicing and die-bonding integrated film and manufacturing method thereof, and semiconductor device |
US17/771,020 US20230005782A1 (en) | 2019-10-28 | 2020-03-25 | Film-like adhesive and method for evaluating ease of splitting, dicing/die-bonding integrated film and method for manufacturing, and semiconductor device |
CN202080074707.0A CN114600225A (en) | 2019-10-28 | 2020-03-25 | Film-like adhesive, method for evaluating its breaking property, dicing die-bonding integrated film, method for manufacturing the same, and semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2019195277 | 2019-10-28 | ||
JP2019-195277 | 2019-10-28 |
Publications (1)
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WO2021084778A1 true WO2021084778A1 (en) | 2021-05-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2020/013478 WO2021084778A1 (en) | 2019-10-28 | 2020-03-25 | Film-like adhesive, method for evaluating ease of cutting of same, dicing/die-bonding integrated film, method for manufacturing same, and semiconductor device |
Country Status (6)
Country | Link |
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US (1) | US20230005782A1 (en) |
JP (1) | JP7476903B2 (en) |
KR (1) | KR20220088866A (en) |
CN (1) | CN114600225A (en) |
TW (1) | TWI827827B (en) |
WO (1) | WO2021084778A1 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009283925A (en) * | 2008-04-22 | 2009-12-03 | Hitachi Chem Co Ltd | Dicing-tape-integrated type bonding sheet, manufacturing method thereof, and manufacturing method of semiconductor device |
JP2019029465A (en) * | 2017-07-28 | 2019-02-21 | 日東電工株式会社 | Die-bonding film, dicing die-bonding film, and method for manufacturing semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
JP4358502B2 (en) | 2002-03-12 | 2009-11-04 | 浜松ホトニクス株式会社 | Semiconductor substrate cutting method |
JP4430085B2 (en) | 2007-03-01 | 2010-03-10 | 日東電工株式会社 | Dicing die bond film |
JP2015211080A (en) | 2014-04-24 | 2015-11-24 | 日東電工株式会社 | Method for manufacturing semiconductor device |
JP6445315B2 (en) | 2014-12-12 | 2018-12-26 | 日東電工株式会社 | Dicing sheet, dicing die-bonding film, and semiconductor device manufacturing method |
-
2020
- 2020-03-25 JP JP2021554056A patent/JP7476903B2/en active Active
- 2020-03-25 CN CN202080074707.0A patent/CN114600225A/en active Pending
- 2020-03-25 KR KR1020227014434A patent/KR20220088866A/en not_active Application Discontinuation
- 2020-03-25 WO PCT/JP2020/013478 patent/WO2021084778A1/en active Application Filing
- 2020-03-25 US US17/771,020 patent/US20230005782A1/en active Pending
- 2020-03-30 TW TW109110731A patent/TWI827827B/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009283925A (en) * | 2008-04-22 | 2009-12-03 | Hitachi Chem Co Ltd | Dicing-tape-integrated type bonding sheet, manufacturing method thereof, and manufacturing method of semiconductor device |
JP2019029465A (en) * | 2017-07-28 | 2019-02-21 | 日東電工株式会社 | Die-bonding film, dicing die-bonding film, and method for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
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TW202117317A (en) | 2021-05-01 |
TWI827827B (en) | 2024-01-01 |
JP7476903B2 (en) | 2024-05-01 |
CN114600225A (en) | 2022-06-07 |
KR20220088866A (en) | 2022-06-28 |
JPWO2021084778A1 (en) | 2021-05-06 |
US20230005782A1 (en) | 2023-01-05 |
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