WO2021052259A1 - 一种掩膜版、掩膜版制备方法以及驱动背板母板 - Google Patents

一种掩膜版、掩膜版制备方法以及驱动背板母板 Download PDF

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Publication number
WO2021052259A1
WO2021052259A1 PCT/CN2020/114867 CN2020114867W WO2021052259A1 WO 2021052259 A1 WO2021052259 A1 WO 2021052259A1 CN 2020114867 W CN2020114867 W CN 2020114867W WO 2021052259 A1 WO2021052259 A1 WO 2021052259A1
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WIPO (PCT)
Prior art keywords
mask
area
region
driving backplane
thickness
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PCT/CN2020/114867
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English (en)
French (fr)
Inventor
徐鹏
嵇凤丽
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/297,520 priority Critical patent/US20220013753A1/en
Publication of WO2021052259A1 publication Critical patent/WO2021052259A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers

Definitions

  • This application relates to the field of display technology, and in particular to a mask, a mask preparation method, and a driving backplane motherboard.
  • the drive backplane motherboard can be prepared by an evaporation process.
  • the mask and the drive backplane motherboard can be bonded to define the evaporation area .
  • the vapor deposition area is used for vapor deposition of the film layer.
  • This application provides a mask, a mask preparation method, and a driving backplane motherboard.
  • a mask in one aspect of the embodiments of the present application, includes a plurality of mask pattern regions, a transition region located between the plurality of mask pattern regions, and a mask surrounding the plurality of mask pattern regions.
  • the transition area includes at least one first half-cut sub-area whose thickness is less than the thickness of the edge area of the mask.
  • the ratio of the thickness of the first half-cut sub-region to the thickness of the edge region of the mask is greater than or equal to 20% and less than or equal to 50%.
  • the thickness of the first half-cut sub-region is greater than or equal to 20 micrometers and less than or equal to 50 micrometers.
  • the mask pattern area includes a plurality of driving backplane mask patterns, and the minimum distance between the first half-cut sub-area and the driving backplane mask pattern is greater than 1 millimeter.
  • the number of the first half-cut sub-areas in the transition area between the first mask pattern area and the second mask pattern area is at least two, at least two The first half-cut sub-areas are arranged along the arrangement direction of the first mask pattern area and the second mask pattern area.
  • the number of the first half-cut sub-areas in the transition area between the first mask pattern area and the second mask pattern area is at least two, at least two
  • the arrangement direction of the first half-cut sub-areas is perpendicular to the arrangement direction of the first mask pattern area and the second mask pattern area.
  • the shapes of at least two of the first half-cut sub-regions are congruent.
  • At least two of the first half-cut sub-areas are in a strip shape, and the length direction is perpendicular to the arrangement direction of the at least two first half-cut sub-areas.
  • the mask pattern area includes a plurality of driving backplane mask patterns and a spacing region between the plurality of driving backplane mask patterns, and at least one of the spacing regions has at least one thickness smaller than that of the The second half-cut sub-area of the thickness of the edge area of the mask.
  • the driving backplane mask pattern is rectangular, and the plurality of driving backplane mask patterns includes at least one row of driving backplanes arranged in a direction parallel to the long side of the driving backplane mask pattern
  • the mask pattern, in a column of the driving backplane mask patterns, the space area between two adjacent driving backplane mask patterns has at least one of the second half-cut sub-areas.
  • the driving backplane mask pattern is rectangular, and the plurality of driving backplane mask patterns includes at least one row of driving backplanes arranged in a direction perpendicular to the long side of the driving backplane mask pattern In the mask pattern, in a row of the driving backplane mask patterns, the space area between two adjacent driving backplane mask patterns has at least one of the second half-cut sub-areas.
  • the thickness of the first half-cut sub-region is equal to the thickness of the second half-cut sub-region.
  • the minimum distance between the second half-cut sub-region and the mask pattern region is greater than 1 millimeter.
  • the ratio between the thickness of the second half-cut sub-region and the thickness of the edge region of the mask is greater than or equal to 20% and less than or equal to 50%.
  • the thickness of the second half-cut sub-region is greater than or equal to 20 micrometers and less than or equal to 50 micrometers.
  • the number of the second half-cut sub-areas in the mask pattern area is at least two, and the shapes of at least two second half-cut sub-areas are identical.
  • the mask pattern area includes a plurality of driving backplane mask patterns and a spacing region between the plurality of driving backplane mask patterns, and at least one of the spacing regions has at least one thickness smaller than that of the The second half-cut sub-area of the thickness of the edge area of the mask;
  • the mask pattern area includes a plurality of driving backplane mask patterns, and the minimum distance between the first half-cut sub-area and the driving backplane mask pattern is greater than 1 millimeter;
  • the ratio of the thickness of the first half-cut sub-region to the thickness of the edge region of the mask is greater than or equal to 20% and less than or equal to 50%;
  • the driving backplane mask pattern is rectangular, and the plurality of driving backplane mask patterns includes at least one row of driving backplane mask patterns arranged in a direction parallel to the long side of the driving backplane mask pattern, In a column of the driving backplane mask patterns, a space area between two adjacent driving backplane mask patterns has at least one of the second half-cut sub-areas;
  • the ratio of the thickness of the second half-cut sub-region to the thickness of the edge region of the mask is greater than or equal to 20% and less than or equal to 50%.
  • a method for preparing a mask for preparing any one of the above-mentioned masks, and the method includes:
  • a half-etching process is performed on the mask substrate to obtain a mask.
  • the mask includes a plurality of mask pattern regions, a transition region located between the plurality of mask pattern regions, and a region surrounding the mask pattern.
  • a plurality of mask pattern areas and a mask edge area of the transition area, and the transition area includes at least one first half-cut sub area with a thickness smaller than that of the mask edge area.
  • the mask pattern area includes a plurality of driving backplane mask patterns and a spacing region between the plurality of driving backplane mask patterns, and at least one of the spacing regions has at least one thickness smaller than that of the The second half-cut sub-area of the thickness of the edge area of the mask.
  • a drive backplane motherboard is provided, and the drive backplane motherboard is made of any one of the above-mentioned masks.
  • Figure 1 shows a schematic structural diagram of a drive backplane motherboard.
  • Figure 2 shows a schematic diagram of some structures in an evaporation process.
  • FIG. 3 shows a schematic diagram of the structure of a mask in the first embodiment of the present application.
  • FIG. 4 shows a schematic diagram of the structure of the second mask in the first embodiment of the present application.
  • FIG. 5 shows a schematic diagram of the structure of the third mask in the first embodiment of the present application.
  • FIG. 6 shows a test data diagram of the sagging amount of a mask according to the first embodiment of the present application.
  • FIG. 7 shows a schematic diagram of the structure of the fourth mask in the first embodiment of the present application.
  • FIG. 8 shows a step flow chart of a method for preparing a mask in the second embodiment of the present application.
  • the current mask and the drive backplane motherboard (the drive backplane motherboard is a kind of substrate composed of multiple drive backplanes in the production process of the drive backplane , After cutting it, you can get multiple drive backplanes) and analyze the reasons for the tight fit.
  • FIG. 1 shows a drive backplane motherboard 10.
  • the drive backplane motherboard 10 includes a backplane area 11, a transition area 12 between the backplane areas 11, and a surrounding backplane area 11 and The edge area 13 of the transition area 12.
  • the transition area 12 is also the wider gap between the motherboard of the drive backplane.
  • FIG. 2 it is a schematic diagram of some structures during the vapor deposition process, in which the mask 20, the driving backplane motherboard 10 and the adsorption structure 30 (such as a magnetic adsorption structure) is arranged from bottom to top, the mask 20 is attached to the driving backplane motherboard 10, and the transition area 12 on the driving backplane motherboard 10 corresponds to the mask 20, then There is also a strip-shaped solid material area in the middle of the mask 20.
  • the adsorption structure 30 such as a magnetic adsorption structure
  • the solid material area is heavier and located in the middle of the mask 20, which will cause the mask 20 to be attached to the drive backplane motherboard 10
  • the drooping amount is large, so that the fit is not tight, and the resulting drive backplane will have uneven color mixing, uneven shadows of pixel graphics, and many other undesirable problems.
  • FIG. 3 it shows a schematic structural diagram of a mask according to an embodiment of the present application.
  • the mask 20 can be used to prepare the driving backplane motherboard 10 through an evaporation process.
  • the mask 20 can be specifically used to prepare the driving backplane display in the driving backplane motherboard 10 through an evaporation process.
  • the drive backplane motherboard 10 includes a backplane area 11, a transition area 12 between the backplane areas 11, and an edge area 13 surrounding the backplane area 11 and the transition area 12.
  • a plurality of driving backplanes 111 are arranged in an array in the backplane area 11.
  • the mask 20 includes: a plurality of mask pattern regions 21, a transition region 22 located between the plurality of mask pattern regions 21, and a mask surrounding the plurality of mask pattern regions 21 and the transition region 22 ⁇ 23 ⁇ Film edge area 23.
  • the transition region 22 includes at least one first half-cut sub-region 221 whose thickness is smaller than that of the mask edge region 23.
  • the mask pattern area 21 is an area used to form some structures of the display areas of a plurality of driving backplanes in the driving backplane motherboard.
  • the mask edge area 23 may correspond to the edge area 13 in the drive backplane motherboard 10
  • the transition area 22 of the mask 20 may correspond to the transition area 12 in the drive backplane motherboard 10.
  • the mask edge area 23 of the mask 20 covers the edge area 13 of the driving backplane mother board 10
  • the transition area of the mask plate 20 22 covers the transition area 12 of the motherboard 10 of the drive backplane.
  • the transition area 22 has at least one first half-cut sub-area 221, and the thickness of the first half-cut sub-area 221 is smaller than the thickness of the mask edge area 23.
  • At least one first half-cut sub area 221 may be provided in the transition area 22 of the mask 20, that is, in the area corresponding to the transition area 12 of the mask 20 and the driving backplane motherboard. Since the thickness of the first half-cut sub area 221 is smaller than the thickness of the mask edge area 23 corresponding to the mask 20 and the edge area 13 of the driving backplane mother board, the weight in the middle of the mask 20 is relatively reduced. , Can reduce the amount of sagging when the mask 20 and the driving backplane motherboard 10 are attached, so that the mask 20 and the driving backplane motherboard 10 can be more closely attached, thereby avoiding the manufactured driving backplane There are many undesirable problems.
  • the ratio between the thickness of the first half-cut sub-region 221 and the thickness of the mask edge region 23 is greater than or equal to 20% and less than or equal to 50%, so that the weight of the mask 20 can be reduced while reducing the weight of the mask 20. Ensure the strength of the mask 20.
  • the thickness of the mask edge region 23 may be 100 micrometers, and correspondingly, the thickness of the first half-cut sub-region 221 may be greater than or equal to 20 micrometers and less than or equal to 50 micrometers.
  • the backplane area 11 includes: a driving backplane 111 and a motherboard gap 112 between the driving backplanes 111.
  • the mask 20 further includes: a plurality of driving backplanes. At least one of the spacing regions 25 between the mask pattern 24 and the plurality of driving backplane mask patterns 24 has at least one second half-cut sub-region 251 whose thickness is smaller than that of the mask edge region 23.
  • the spacing area 25 may correspond to the motherboard gap 112 in the driving backplane motherboard 10.
  • At least one second half tick can be provided in the spacing area 25 of the mask 20, that is, in the area corresponding to the mask 20 and the motherboard gap 112 of the driving backplane motherboard.
  • Area 251 because the thickness of the second half-cut sub area 251 is smaller than the thickness of the mask edge area 23 corresponding to the mask 20 and the edge area 13 of the driving backplane mother board, therefore, the gap between the mask 20 and the mother board can be reduced.
  • the weight of the area corresponding to 112 in this way, can further reduce the amount of sagging when the mask 20 and the driving backplane motherboard 10 are attached, so that the mask 20 and the driving backplane motherboard 10 can be more closely attached. Furthermore, various undesirable problems of the manufactured drive backplane can be avoided.
  • the ratio between the thickness of the second half-cut sub-region 251 and the thickness of the mask edge region 23 is greater than or equal to 20% and less than or equal to 50%, so that the weight of the mask 20 can be reduced while reducing the weight of the mask 20. Ensure the strength of the mask 20.
  • the thickness of the mask edge region 23 may be 100 micrometers, and correspondingly, the thickness of the second half-cut sub-region 251 may be greater than or equal to 20 micrometers and less than or equal to 50 micrometers.
  • the mask 20 further includes: the minimum distance between the first half-cut sub-region 221 and the driving backplane mask pattern 24 is greater than 1 millimeter.
  • the driving backplane 111 has a non-display area on the periphery, and the width of the non-display area is usually 1 mm. Therefore, the distance between each first half-cut sub-area 221 and each driving backplane mask pattern 24 can be greater than 1 mm, in this structure, the non-display area around the driving backplane 111 can correspond to the mask area with a larger thickness between the first half-cut sub-area 221 and the driving backplane mask pattern 24, so that the non-display area The devices in are better protected during the evaporation process.
  • the driving backplane mask pattern 24 of the mask 20 is used to prepare the display area of the driving backplane 111, the hollowing degree of the driving backplane mask pattern 24 may be relatively large, and each first half-cut sub area The distance between the 221 and each driving backplane mask pattern 24 is greater than 1 mm, and the connection strength between the regions of the mask 20 can also be ensured.
  • the minimum distance between the second half-cut sub-region 251 and the driving backplane mask pattern 24 may also be greater than 1 mm.
  • the non-display area on the periphery of the driving backplane 111 can correspond to the mask area with a larger thickness between the second half-cut sub-area 251 and the driving backplane mask pattern 24, so that the devices in the non-display area can be vaporized. Better protection during the plating process.
  • the connection strength between the regions of the mask 20 can also be ensured.
  • the driving backplane mask pattern 24 is rectangular, and the plurality of driving backplane mask patterns 24 includes at least one row along a long side parallel to the driving backplane mask pattern 24
  • the driving backplane mask patterns 24 arranged in the direction D.
  • the space 25 between two adjacent driving backplane mask patterns 24 has at least one second half-cut sub-area 251. That is, in any column of the driving backplane mask patterns 24, the second half-cut sub-areas can be provided between parts of the driving backplane mask patterns 24, or it can be between every two second half-cut sub-areas 24 Set the second half-minute sub-area in between.
  • the distance between two adjacent backplane mask patterns 24 in a row of backplane mask patterns 24 is about 12-15 mm, and In the direction D perpendicular to the long side of the driving backplane mask pattern 24, the distance between two adjacent driving backplane mask patterns 24 is about 9 mm. That is, compared to the lateral spacing between two adjacent drive backplane mask patterns 24, the longitudinal spacing between two adjacent drive backplane mask patterns 24 is larger. Therefore, only in parallel
  • the area between the two driving backplane mask patterns 24 in the direction D of the long side of the driving backplane mask pattern 24 is the second half-cut sub-area 251, and no second half-cut sub-area is provided at other positions 251. While reducing the weight of the mask 20, the strength of the mask 20 can be ensured.
  • the plurality of driving backplane mask patterns 24 includes at least one row of driving backplane mask patterns 24 arranged in a direction D perpendicular to the long side of the driving backplane mask pattern 24, and one row of driving backplane mask patterns 24.
  • the interval area 25 between two adjacent driving backplane mask patterns 24 has at least one second half-cut sub area 251.
  • the second half-cut sub-areas can be set between parts of the driving backplane mask patterns 24, or alternatively, between every two second half-cut sub-areas 24 The second half-minute sub-region is set in between, which is not specifically limited in the embodiment of the present application.
  • each mask pattern area (211 and 212) only shows three columns of driving backplane mask patterns 24, but the driving backplane mask patterns 24
  • the number may also be other, for example, it may spread across the entire mask pattern area, which is not limited in the embodiment of the present application.
  • the sagging amount test data chart shown in FIG. 6 can be obtained.
  • the ordinate is the amount of sagging
  • the minus sign indicates that the sagging direction is downward
  • the ordinate is in millimeters (mm)
  • the abscissa is the test point number along the X direction and the Y direction, respectively, where the X direction and the Y direction As shown in Figure 5.
  • 31 test points with the same spacing can be selected along the X direction, and 31 test points with the same spacing along the Y direction, and then the sag of these 62 test points can be measured to obtain the sag shown in Figure 6.
  • Quantities test data graph are examples of the test points with the same spacing.
  • the maximum sagging amount of the mask provided by the embodiment of the present application is about 0.22 mm, which meets the requirement that the sagging amount is less than or equal to 0.25 mm. Therefore, the mask provided by the embodiment of the present application can be more closely attached to the driving backplane motherboard during the evaporation process.
  • the number of first half-cut sub-regions 221 in the transition region 22 between the first mask pattern region 211 and the second mask pattern region 212 There are at least two, and the arrangement direction of the at least two first half-cut sub-regions 221 is perpendicular to the arrangement direction of the first mask pattern area 211 and the second mask pattern 212 area (in FIG. 4, at least two The arrangement direction of the half engraved sub-regions 221 is parallel to the direction D of the long side of the driving backplane mask pattern 24).
  • the arrangement direction of the at least two first half-cut sub-regions 221 is perpendicular to the arrangement direction of the first mask pattern area 211 and the second mask pattern area 212 (in FIG. 5 , The arrangement direction of the at least two first half-cut sub-regions 221 is parallel to the direction D of the long side of the driving backplane mask pattern 24).
  • the first half-cut sub-regions 221 and the second half-cut sub-regions 251 can have a variety of shapes, numbers, and arrangements, and can be freely selected according to requirements in practical applications. This embodiment of the application does not make this Specific restrictions.
  • the mask includes at least two first half-cut sub-areas, and the shapes of the at least two first half-cut sub-areas are congruent; if the mask includes at least two second half-cut sub-areas, The shapes of these at least two second half-cut regions are congruent.
  • the shape of the first half engraved area or the second half engraved area is congruent, which can facilitate the manufacture of the half engraved area and can balance the forces of each area.
  • one first half-cut sub-areas 221 may be provided, and the first half-cut sub-areas 221 may be strip-shaped. 4, a plurality of first half-cut sub-regions 221 with the same size and shape may also be provided. Each first half-cut sub-region 221 may have a strip shape, and each first half-cut sub-region 221 may be perpendicular to The driving back plate 111 is arranged side by side in the direction D of the long side.
  • each of the first half-cut sub-regions 221 may be strip-shaped, and each first half-cut sub-region 221 may be parallel to
  • the driving back plate 111 is arranged side by side in the direction D of the long side.
  • a plurality of first half-cut sub-regions 221 with different sizes and shapes may also be provided, and the plurality of first half-cut sub-regions 221 may be arranged side by side in a direction D parallel to the long side of the driving back plate 111 cloth.
  • a second half-cut sub-region 251 may be provided between every two adjacent driving backplane mask patterns 24 in the direction D parallel to the long side of the driving backplane 111.
  • FIG. 7 it is also possible to provide a second half-cut sub-region 251 between some adjacent two driving backplane mask patterns 24 in the direction D parallel to the long side of the driving backplane 111, instead of all phases.
  • a second half-cut sub-region 251 is provided between two adjacent driving backplane mask patterns 24.
  • At least one first half engraved area may be provided in the transition area of the mask, that is, in the area corresponding to the transition area of the mask and the driving backplane motherboard.
  • the thickness of the engraved area is smaller than the thickness of the mask edge area corresponding to the edge area of the mask and the driver backplane motherboard. Therefore, the weight in the middle of the mask is relatively reduced. In this way, the mask and the driver back can be reduced.
  • the amount of sagging during the bonding of the motherboard makes the mask and the motherboard of the drive backplane fit more closely, which can avoid various undesirable problems in the manufactured drive backplane.
  • the mask is used to prepare a driving backplane motherboard through an evaporation process.
  • the driving backplane motherboard includes: a backplane area, a transition area between the backplane areas, and an edge area surrounding the backplane area and the transition area.
  • the method may specifically include the following steps:
  • Step 701 Provide a mask substrate.
  • a mask substrate can be provided first.
  • the mask can be INVAR (Invar, a nickel-iron alloy containing 35.4% nickel).
  • Step 702 Perform a half-etching process on the mask substrate to obtain a mask.
  • the mask includes a plurality of mask pattern areas, a transition area between the plurality of mask pattern areas, and a mask edge area surrounding the plurality of mask pattern areas and the transition area, and the transition area includes at least one with a thickness less than The first half-cut sub-area of the thickness of the edge area of the mask.
  • the mask substrate can include a variety of regions with different thicknesses, and the ratio of the thickness of each region to the thickness of the mask substrate can be 0 -1, the thickness ratio of the hollow area is 0, and the thickness ratio of the unetched area is 1.
  • a half-etching process can be performed in the transition area of the mask substrate, so that at least one first half-etched sub-region can be etched in the transition area.
  • At least one first half engraved area may be provided in the transition area of the mask, that is, in the area corresponding to the transition area of the mask and the driving backplane motherboard.
  • the thickness of the engraved area is smaller than the thickness of the mask edge area corresponding to the edge area of the mask and the driving backplane mother board. Therefore, the weight in the middle of the mask can be reduced. In this way, the mask and the driving backplane can be reduced.
  • the amount of sagging during the bonding of the motherboard enables the mask and the motherboard of the drive backplane to be more closely attached, thereby avoiding various undesirable problems in the manufactured drive backplane.
  • the ratio between the thickness of the first half-cut sub-region and the thickness of the edge region of the mask is greater than or equal to 20% and less than or equal to 50%, so as to reduce the weight of the mask while ensuring that the mask The strength of the edition.
  • the thickness of the edge region of the mask may be 100 micrometers.
  • the thickness of the first half-cut sub-region may be greater than or equal to 20 micrometers and less than or equal to 50 micrometers.
  • the backplane area includes a driving backplane and a motherboard gap between the driving backplanes.
  • the mask substrate further includes a space area corresponding to the motherboard gap.
  • the preparation method may further include the following step: performing half-etching in the spacer region to obtain at least one second half-etched sub-region. Wherein, the thickness of the second half-cut sub area is smaller than the thickness of the edge area of the mask.
  • half-etching can be performed in the spacer region of the mask substrate, so that at least one second half-etching subregion can be etched in the spacer region, wherein each second half-etching subregion The thickness is less than the thickness of the first region.
  • At least one second half-cut sub-area may be provided in the gap area of the mask, that is, in the area corresponding to the gap between the mask and the motherboard of the drive backplane motherboard, because the first The thickness of the half-cut area is smaller than the thickness of the mask edge area corresponding to the edge area of the mask and the motherboard of the drive backplane. Therefore, the weight of the area corresponding to the gap between the mask and the motherboard can be reduced. In this way, it can be further The sagging amount when the mask plate and the drive backplane motherboard are attached is reduced, so that the mask plate and the drive backplane motherboard can be more closely attached, and various undesirable problems of the manufactured drive backplane can be avoided.
  • the ratio between the thickness of the second half-cut sub-region and the thickness of the edge region of the mask is greater than or equal to 20% and less than or equal to 50%, so that the weight of the mask can be reduced while ensuring the mask The strength of the edition.
  • the thickness of the edge region of the mask may be 100 micrometers.
  • the thickness of the second half-cut sub-region may be greater than or equal to 20 micrometers and less than or equal to 50 micrometers.
  • first half engraved subregion and the second half engraved subregion can have a variety of shapes, numbers and arrangements, which can be freely selected according to requirements in practical applications, which are not specifically limited in the embodiments of this application. .
  • shape, number, and arrangement of the exemplary first half-cut sub-areas and the second half-cut sub-areas reference may be made to the related content in the above-mentioned embodiment, which will not be repeated in this embodiment.
  • At least one first half-engraved sub-region can be etched in the region corresponding to the transition region of the mask and the driving backplane motherboard. Because the thickness of the first half-engraved sub-region is smaller than that of the mask The thickness of the first area corresponding to the edge area of the drive backplane motherboard, therefore, the weight in the middle of the mask is relatively reduced. In this way, the amount of sagging when the mask plate is attached to the drive backplane motherboard can be reduced. Therefore, the mask and the drive backplane motherboard can be more closely attached, and various undesirable problems of the manufactured drive backplane can be avoided.
  • the embodiments of the present application also provide a drive backplane motherboard, which is made of any one of the mask plates provided in the above-mentioned embodiments.

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Abstract

提供了一种掩膜版、掩膜版制备方法以及驱动背板母板，涉及显示技术领域。其中，掩膜版(20)包括多个掩膜图案区域(21)、位于多个掩膜图案区域(21)之间的过渡区域(22)以及包围多个掩膜图案区域(21)和过渡区域(22)的掩膜边缘区域(23)；过渡区域(22)中包括至少一个厚度小于掩膜边缘区域(23)的厚度的第一半刻子区域(221)。由于第一半刻子区域(221)的厚度小于掩膜边缘区域(23)的厚度，因此减轻了掩膜版(20)在第一半刻子区域(221)的重量，如此，可减小掩膜版(20)与驱动背板母板贴合时的下垂量，使得二者能够更紧密地贴合，避免了驱动背板出现多种不良问题。

Description

一种掩膜版、掩膜版制备方法以及驱动背板母板
本申请要求于2019年09月17日提交的申请号为201910876549.X、发明名称为“一种掩膜版及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，特别涉及一种掩膜版、掩膜版制备方法以及驱动背板母板。
背景技术
目前，在生产驱动背板母板时，可以通过蒸镀工艺对驱动背板母板进行制备，在该过程中可以将掩膜版与驱动背板母板进行贴合，从而限定出蒸镀区域，该蒸镀区域用于蒸镀膜层。
发明内容
本申请提供一种掩膜版、掩膜版制备方法以及驱动背板母板，。
本申请实施例的一方面，提供了一种掩膜版，所述掩膜版包括多个掩膜图案区域、位于所述多个掩膜图案区域之间的过渡区域以及包围所述多个掩膜图案区域和所述过渡区域的掩膜边缘区域；
所述过渡区域中包括至少一个厚度小于所述掩膜边缘区域的厚度的第一半刻子区域。
可选地，所述第一半刻子区域的厚度与所述掩膜边缘区域的厚度之间的比值大于或等于20％，且小于或等于50％。
可选地，所述第一半刻子区域的厚度大于或等于20微米，且小于或等于50微米。
可选地，所述掩膜图案区域包括多个驱动背板掩膜图案，所述第一半刻子区域与所述驱动背板掩膜图案之间的最小距离大于1毫米。
可选地，所述多个掩膜图案区域中，第一掩膜图案区域和第二掩膜图案区域之间的过渡区域中的第一半刻子区域的数量为至少两个，至少两个所述第一 半刻子区域沿所述第一掩膜图案区域和所述第二掩膜图案区域的排布方向排布。
可选地，所述多个掩膜图案区域中，第一掩膜图案区域和第二掩膜图案区域之间的过渡区域中的第一半刻子区域的数量为至少两个，至少两个所述第一半刻子区域的排布方向与所述第一掩膜图案区域和所述第二掩膜图案区域的排布方向垂直。
可选地，至少两个所述第一半刻子区域的形状全等。
可选地，至少两个所述第一半刻子区域均呈条状，且长度方向与至少两个所述第一半刻子区域的排布方向垂直。
可选地，所述掩膜图案区域包括多个驱动背板掩膜图案以及所述多个驱动背板掩膜图案之间的间隔区域，至少一个所述间隔区域中具有至少一个厚度小于所述掩膜边缘区域的厚度的第二半刻子区域。
可选地，所述驱动背板掩膜图案呈长方形，所述多个驱动背板掩膜图案包括至少一列沿平行于所述驱动背板掩膜图案的长边的方向排布的驱动背板掩膜图案，一列所述驱动背板掩膜图案中，相邻的两个驱动背板掩膜图案之间的间隔区域具有至少一个所述第二半刻子区域。
可选地，所述驱动背板掩膜图案呈长方形，所述多个驱动背板掩膜图案包括至少一行沿垂直于所述驱动背板掩膜图案的长边的方向排布的驱动背板掩膜图案，一行所述驱动背板掩膜图案中，相邻的两个驱动背板掩膜图案之间的间隔区域具有至少一个所述第二半刻子区域。
可选地，所述第一半刻子区域的厚度和所述第二半刻子区域的厚度相等。
可选地，所述第二半刻子区域与所述掩膜图案区域之间的最小距离大于1毫米。
可选地，所述第二半刻子区域的厚度与所述掩膜边缘区域的厚度之间的比值大于或等于20％，且小于或等于50％。
可选地，所述第二半刻子区域的厚度大于或等于20微米，且小于或等于50微米。
可选地，所述掩膜图案区域中第二半刻子区域的数量为至少两个，至少两个所述第二半刻子区域的形状全等。
可选地，所述掩膜图案区域包括多个驱动背板掩膜图案以及所述多个驱动背板掩膜图案之间的间隔区域，至少一个所述间隔区域中具有至少一个厚度小 于所述掩膜边缘区域的厚度的第二半刻子区域；
所述掩膜图案区域包括多个驱动背板掩膜图案，所述第一半刻子区域与所述驱动背板掩膜图案之间的最小距离大于1毫米；
所述第一半刻子区域的厚度与所述掩膜边缘区域的厚度之间的比值大于或等于20％，且小于或等于50％；
所述驱动背板掩膜图案呈长方形，所述多个驱动背板掩膜图案包括至少一列沿平行于所述驱动背板掩膜图案的长边的方向排布的驱动背板掩膜图案，一列所述驱动背板掩膜图案中，相邻的两个驱动背板掩膜图案之间的间隔区域具有至少一个所述第二半刻子区域；
所述第二半刻子区域的厚度与所述掩膜边缘区域的厚度之间的比值大于或等于20％，且小于或等于50％。
本申请实施例的另一方面，提供一种掩膜版的制备方法，用于制备上述任一的掩膜版，所述方法包括：
提供掩膜版基材；
对所述掩膜版基材进行半刻蚀处理，得到掩膜版，所述掩膜版包括多个掩膜图案区域、位于所述多个掩膜图案区域之间的过渡区域以及包围所述多个掩膜图案区域和所述过渡区域的掩膜边缘区域，所述过渡区域中包括至少一个厚度小于所述掩膜边缘区域的厚度的第一半刻子区域。
可选地，所述掩膜图案区域包括多个驱动背板掩膜图案以及所述多个驱动背板掩膜图案之间的间隔区域，至少一个所述间隔区域中具有至少一个厚度小于所述掩膜边缘区域的厚度的第二半刻子区域。
本申请实施例的另一方面，提供一种驱动背板母板，所述驱动背板母板由上述任一所述的掩膜版制成。
附图说明
图1示出了一种驱动背板母板的结构示意图。
图2示出了一种蒸镀工艺中一些结构的示意图。
图3示出了本申请实施例一的一种掩膜版的结构示意图。
图4示出了本申请实施例一的第二种掩膜版的结构示意图。
图5示出了本申请实施例一的第三种掩膜版的结构示意图。
图6示出了本申请实施例一的一种掩膜版的下垂量测试数据图。
图7示出了本申请实施例一的第四种掩膜版的结构示意图。
图8示出了本申请实施例二的一种掩膜版的制备方法的步骤流程图。
具体实施方式
下面结合附图和具体实施方式对本申请作进一步详细的说明。
在对本申请实施例进行详细说明之前，首先对目前的掩膜版与驱动背板母板(驱动背板母板为一种在驱动背板的生产过程中，由多个驱动背板构成的基板，后续将其切割后既可以得到多个驱动背板)贴合不紧的原因进行分析。申请人通过观察与分析发现，在通过一些产线，例如OLED(Organic Light-Emitting Diode，有机发光二极管)G6 Half产线(OLED G6 Half为一种生产线的名称)生产驱动背板母板时，在可以采用4shot曝光(4shot曝光即4次曝光)方式对驱动背板母板进行曝光，而此种曝光方式会造成驱动背板母板中间存在一条较宽的间距。图1示出了一种驱动背板母板10，参照图1，该驱动背板母板10包括：背板区域11、背板区域11之间的过渡区域12，以及包围背板区域11和过渡区域12的边缘区域13。其中，过渡区域12也即是驱动背板母板中间存在的那条较宽的间距。
申请人进一步发现，在进行至蒸镀工艺的步骤时，如图2所示，其为一种蒸镀工艺时一些结构的示意图，其中，掩膜版20、驱动背板母板10以及吸附结构30(如磁吸附结构)自下而上依次设置，掩膜版20与驱动背板母板10进行贴合，而驱动背板母板10上的过渡区域12对应到掩膜版20上，则掩膜版的20中间也会对应存在一个条状的实材区域，该实材区域重量较大，且位于掩膜版20中间，将导致掩膜版20与驱动背板母板10贴合时下垂量较大，从而出现贴合不紧的情况，进而会导致制成的驱动背板出现混色不均、像素图形的阴影(shadow)不均等多种不良问题。
参照图3，其示出了本申请实施例的一种掩膜版的结构示意图。该掩膜版20可以用于通过蒸镀工艺制备驱动背板母板10，在实际应用中，该掩膜版20具体可用于通过蒸镀工艺制备驱动背板母板10中的驱动背板显示区域中的一些结构。参照图1，该驱动背板母板10包括：背板区域11、背板区域11之间的过渡区域12，以及包围背板区域11和过渡区域12的边缘区域13。其中，背板区域11中阵列排布有多个驱动背板111。
如图3所示，该掩膜版20包括：多个掩膜图案区域21、位于多个掩膜图案区域21之间的过渡区域22以及包围多个掩膜图案区域21和过渡区域22的掩膜边缘区域23。
过渡区域22中包括至少一个厚度小于掩膜边缘区域23的厚度的第一半刻子区域221。
其中，掩膜图案区域21为用于形成驱动背板母板中多个驱动背板的显示区域的一些结构的区域。掩膜边缘区域23可以与驱动背板母板10中的边缘区域13对应，掩膜版20的过渡区域22可以与驱动背板母板10中的过渡区域12对应，也即是在将掩膜版20与驱动背板母板10进行贴合，以用于蒸镀膜层时，掩膜版20的掩膜边缘区域23覆盖驱动背板母板10的边缘区域13，掩膜版20的过渡区域22覆盖驱动背板母板10的过渡区域12。其中，参照图3过渡区域22具有至少一个第一半刻子区域221，第一半刻子区域221的厚度小于掩膜边缘区域23的厚度。
在本申请实施例中，可以在掩膜版20的过渡区域22，也即是在掩膜版20与驱动背板母板过渡区域12对应的区域中，设置至少一个第一半刻子区域221，由于第一半刻子区域221的厚度，小于掩膜版20与驱动背板母板边缘区域13对应的掩膜边缘区域23的厚度，因此，相对减轻了掩膜版20中间的重量，如此，可以减小掩膜版20与驱动背板母板10贴合时的下垂量，使得掩膜版20与驱动背板母板10能够更加紧密地贴合，进而可以避免制成的驱动背板出现多种不良问题。
可选地，第一半刻子区域221的厚度与掩膜边缘区域23的厚度之间的比值大于或等于20％，且小于或等于50％，从而可以在减轻掩膜版20重量的同时，保证掩膜版20的强度。在具体应用中，掩膜边缘区域23的厚度可以为100微米，相应的，第一半刻子区域221的厚度可以大于或等于20微米，且小于或等于50微米。
可选地，参照图1，背板区域11包括：驱动背板111，以及驱动背板111之间的母板间隙112，相应的，参照图4，掩膜版20还包括：多个驱动背板掩膜图案24以及多个驱动背板掩膜图案24之间的间隔区域25，至少一个间隔区域25中具有至少一个厚度小于掩膜边缘区域23的厚度的第二半刻子区域251。
其中，间隔区域25可以与驱动背板母板10中的母板间隙112对应。
在本申请实施例中，可以在掩膜版20的间隔区域25，也即是在掩膜版20 与驱动背板母板的母板间隙112对应的区域中，设置至少一个第二半刻子区域251，由于第二半刻子区域251的厚度，小于掩膜版20与驱动背板母板边缘区域13对应的掩膜边缘区域23的厚度，因此，可以减轻掩膜版20与母板间隙112对应的区域的重量，如此，可以进一步减小掩膜版20与驱动背板母板10贴合时的下垂量，使得掩膜版20与驱动背板母板10能够更加紧密地贴合，进而可以避免制成的驱动背板出现多种不良问题。
可选地，第二半刻子区域251的厚度与掩膜边缘区域23的厚度之间的比值大于或等于20％，且小于或等于50％，从而可以在减轻掩膜版20重量的同时，保证掩膜版20的强度。在具体应用中，掩膜边缘区域23的厚度可以为100微米，相应的，第二半刻子区域251的厚度可以大于或等于20微米，且小于或等于50微米。
如图3所示，掩膜版20还包括：第一半刻子区域221与驱动背板掩膜图案24之间的最小距离大于1毫米。
驱动背板111***具有非显示区域，而非显示区域的宽度通常为1毫米，因此，可以使每个第一半刻子区域221与每个驱动背板掩膜图案24之间的距离均大于1毫米，如此结构下，驱动背板111***的非显示区域可以对应第一半刻子区域221与驱动背板掩膜图案24之间厚度较大的掩膜版区域，从而能够使非显示区域中的器件在蒸镀过程中得到较好的保护。另外，由于掩膜版20的驱动背板掩膜图案24用于制备驱动背板111的显示区域，因而驱动背板掩膜图案24的镂空度可能较大，而每个第一半刻子区域221与每个驱动背板掩膜图案24之间的距离均大于1毫米，也能够保证掩膜版20各区域之间的连接强度。
类似地，第二半刻子区域251与驱动背板掩膜图案24之间的最小距离也可以大于1毫米。如此，驱动背板111***的非显示区域可以对应第二半刻子区域251与驱动背板掩膜图案24之间厚度较大的掩膜版区域，从而能够使非显示区域中的器件在蒸镀过程中得到较好的保护。另外，也能够保证掩膜版20各区域之间的连接强度。
在一种可选的实现方式中，参照图4，驱动背板掩膜图案24呈长方形，多个驱动背板掩膜图案24包括至少一列沿平行于驱动背板掩膜图案24的长边的方向D排布的驱动背板掩膜图案24，一列驱动背板掩膜图案24中，相邻的两个驱动背板掩膜图案24之间的间隔区域25具有至少一个第二半刻子区域251。也即是可以在任意一列驱动背板掩膜图案24中，部分驱动背板掩膜图案24之 间设置第二半刻子区域，或者，也可以在每两个第二半刻子区域24之间设置第二半刻子区域。
在平行于驱动背板掩膜图案24的长边的方向D上，一列背板掩膜图案24中两个相邻的背板掩膜图案24之间的间距大约为12-15毫米，而在垂直于驱动背板掩膜图案24的长边的方向D上，两个相邻的驱动背板掩膜图案24之间的间距大约为9毫米。也即是相比于相邻的两个驱动背板掩膜图案24之间的横向间距，相邻的两个驱动背板掩膜图案24之间的纵向间距更大一些，因此，仅在平行于驱动背板掩膜图案24的长边的方向D上的两个驱动背板掩膜图案24之间的区域第二半刻子区域251，而在其他位置均不设置第二半刻子区域251，可以在减轻掩膜版20重量的同时，保证掩膜版20的强度。
当然，可选地，多个驱动背板掩膜图案24包括至少一行沿垂直于驱动背板掩膜图案24的长边的方向D排布的驱动背板掩膜图案24，一行驱动背板掩膜图案24中，相邻的两个驱动背板掩膜图案24之间的间隔区域25具有至少一个第二半刻子区域251。类似的，可以在任意一行驱动背板掩膜图案24中，部分驱动背板掩膜图案24之间设置第二半刻子区域，或者，也可以在每两个第二半刻子区域24之间设置第二半刻子区域，本申请实施例对此不作具体限定。
需要说明的是，图4所示出的掩膜板中，每个掩膜图案区域(211和212)仅示出了3列驱动背板掩膜图案24，但驱动背板掩膜图案24的数量还可以为其他，例如可以遍布整个掩膜图案区域，本申请实施例对此不进行限制。
通过对本申请实施例提供的掩膜版进行下垂量测试，可以得到图6所示的下垂量测试数据图。参照图6，纵坐标为下垂量，负号表示下垂方向向下，纵坐标为单位为毫米(mm)，横坐标为分别沿X方向和Y方向的测试点标号，其中，X方向和Y方向如图5所示。在测试时，可以沿X方向选取间距相同的31个测试点，以及沿Y方向选取间距相同的31个测试点，进而对这62个测试点的下垂量进行测量，获得图6所示的下垂量测试数据图。参照图6可知，本申请实施例提供的掩膜版的最大下垂量约为0.22毫米，满足下垂量小于或等于0.25毫米的要求。因此，本申请实施例提供的掩膜版可以在蒸镀工艺时与驱动背板母板更加紧密地贴合。
可选地，如图4所示，多个掩膜图案区域中，第一掩膜图案区域211和第二掩膜图案区域212之间的过渡区域22中的第一半刻子区域221的数量为至少两个，至少两个第一半刻子区域221的排布方向与第一掩膜图案区域211和第 二掩膜图案212区域的排布方向垂直(在图4中，至少两个第一半刻子区域221排布方向和驱动背板掩膜图案24的长边的方向D平行)。
可选地，如图5所示，至少两个第一半刻子区域221的排布方向与第一掩膜图案区域211和第二掩膜图案区域212的排布方向垂直(在图5中，至少两个第一半刻子区域221排布方向和驱动背板掩膜图案24的长边的方向D平行)。
需要说明的是，第一半刻子区域221和第二半刻子区域251可以有多种形状、数量及排布方式，在实际应用中可以根据需求自由选定，本申请实施例对此不作具体限定。可选地，掩膜版中包括至少两个第一半刻子区域，这至少两个第一半刻子区域的形状全等；若掩膜版中包括至少两个第二半刻子区域，这至少两个第二半刻子区域的形状全等。第一半刻子区域或第二半刻子区域的形状全等，可以便于半刻子区域的制造，且能够平衡各个区域的受力。
例如，参照图3，可以设置1个第一半刻子区域221，该第一半刻子区域221可以呈条状。参照图4，也可以设置大小和形状均相同的多个第一半刻子区域221，各个第一半刻子区域221均可以呈条状，且各个第一半刻子区域221可以沿垂直于驱动背板111的长边的方向D上并列排布。参照图5，也可以设置大小和形状均相同的多个第一半刻子区域221，各个第一半刻子区域221均可以呈条状，且各个第一半刻子区域221可以沿平行于驱动背板111的长边的方向D上并列排布。参照图7，还可以设置大小和形状均不同的多个第一半刻子区域221，且多个第一半刻子区域221可以沿平行于驱动背板111的长边的方向D上并列排布。
再例如，参照图4和图5，可以在平行于驱动背板111的长边的方向D上相邻的每两个驱动背板掩膜图案24之间均设置一个第二半刻子区域251。参照图7，也可以在平行于驱动背板111的长边的方向D上某些相邻的两个驱动背板掩膜图案24之间设置一个第二半刻子区域251，而不是所有相邻的两个驱动背板掩膜图案24之间均设置一个第二半刻子区域251。
在本申请实施例中，可以在掩膜版的过渡区域，也即是在掩膜版与驱动背板母板过渡区域对应的区域中，设置至少一个第一半刻子区域，由于第一半刻子区域的厚度，小于掩膜版与驱动背板母板边缘区域对应的掩膜边缘区域的厚度，因此，相对减轻了掩膜版中间的重量，如此，可以减小掩膜版与驱动背板母板贴合时的下垂量，使得掩膜版与驱动背板母板能够更加紧密地贴合，进而 可以避免制成的驱动背板出现多种不良问题。
参照图8，示出了本申请实施例二的一种掩膜版的制备方法的步骤流程图。掩膜版用于通过蒸镀工艺制备驱动背板母板，驱动背板母板包括：背板区域、背板区域之间的过渡区域，以及包围背板区域和过渡区域的边缘区域。该方法具体可以包括以下步骤：
步骤701：提供掩膜版基材。
在本步骤中，首先可以提供一掩膜版基材，可选地，该掩膜版可以为INVAR(因瓦合金，含有35.4％镍的镍铁合金)。
步骤702：对掩膜版基材进行半刻蚀处理，得到掩膜版。
其中，掩膜版包括多个掩膜图案区域、位于多个掩膜图案区域之间的过渡区域以及包围多个掩膜图案区域和过渡区域的掩膜边缘区域，过渡区域中包括至少一个厚度小于掩膜边缘区域的厚度的第一半刻子区域。在对掩膜版基材进行半刻蚀处理的过程中，掩膜版基材可以包括厚度各不相同的多种区域，各个区域的厚度与掩膜版基材的厚度的比值范围可以为0-1，镂空区域的厚度比值为0，而未进行刻蚀的区域的厚度比值为1。
在本步骤中，可以在掩膜版基材的过渡区域中进行半刻蚀处理，从而可以在过渡区域中刻蚀出至少一个第一半刻子区域。
在本申请实施例中，可以在掩膜版的过渡区域，也即是在掩膜版与驱动背板母板过渡区域对应的区域中，设置至少一个第一半刻子区域，由于第一半刻子区域的厚度，小于掩膜版与驱动背板母板边缘区域对应的掩膜边缘区域的厚度，因此，可以减轻掩膜版中间的重量，如此，可以减小掩膜版与驱动背板母板贴合时的下垂量，使得掩膜版与驱动背板母板能够更加紧密地贴合，进而可以避免制成的驱动背板出现多种不良问题。
可选地，第一半刻子区域的厚度与掩膜边缘区域的厚度之间的比值大于或等于20％，且小于或等于50％，从而可以在减轻掩膜版重量的同时，保证掩膜版的强度。掩膜边缘区域的厚度可以为100微米，相应的，第一半刻子区域的厚度可以大于或等于20微米，且小于或等于50微米。
可选地，背板区域包括：驱动背板，以及驱动背板之间的母板间隙，相应的，掩膜版基材还包括与母板间隙对应的间隔区域。则该制备方法还可以包括下述步骤：在间隔区域中进行半刻蚀，得到至少一个第二半刻子区域。其中， 第二半刻子区域的厚度小于掩膜边缘区域的厚度。
在该步骤中，可以在掩膜版基材的间隔区域中进行半刻蚀，从而可以在间隔区域中刻蚀出至少一个第二半刻子区域，其中，每个第二半刻子区域的厚度均小于第一区域的厚度。
在本申请实施例中，可以在掩膜版的间隔区域，也即是在掩膜版与驱动背板母板的母板间隙对应的区域中，设置至少一个第二半刻子区域，由于第二半刻子区域的厚度，小于掩膜版与驱动背板母板边缘区域对应的掩膜边缘区域的厚度，因此，可以减轻掩膜版与母板间隙对应的区域的重量，如此，可以进一步减小掩膜版与驱动背板母板贴合时的下垂量，使得掩膜版与驱动背板母板能够更加紧密地贴合，进而可以避免制成的驱动背板出现多种不良问题。
可选地，第二半刻子区域的厚度与掩膜边缘区域的厚度之间的比值大于或等于20％，且小于或等于50％，从而可以在减轻掩膜版重量的同时，保证掩膜版的强度。掩膜边缘区域的厚度可以为100微米，相应的，第二半刻子区域的厚度可以大于或等于20微米，且小于或等于50微米。
需要说明的是，第一半刻子区域和第二半刻子区域可以有多种形状、数量及排布方式，在实际应用中可以根据需求自由选定，本申请实施例对此不作具体限定。示例性的第一半刻子区域和第二半刻子区域的形状、数量及排布方式，可以参考上述实施例中的相关内容，本实施例在此不再赘述。
在本申请实施例中，可以在掩膜版与驱动背板母板过渡区域对应的区域中，刻蚀出至少一个第一半刻子区域，由于第一半刻子区域的厚度，小于掩膜版与驱动背板母板边缘区域对应的第一区域的厚度，因此，相对减轻了掩膜版中间的重量，如此，可以减小掩膜版与驱动背板母板贴合时的下垂量，使得掩膜版与驱动背板母板能够更加紧密地贴合，进而可以避免制成的驱动背板出现多种不良问题。
本申请实施例还提供一种驱动背板母板，该驱动背板母板由上述实施例提供的任意一种掩膜板制成。
对于前述的各方法实施例，为了简单描述，故将其都表述为一系列的动作组合，但是本领域技术人员应该知悉，本申请并不受所描述的动作顺序的限制，因为依据本申请，某些步骤可以采用其他顺序或者同时进行。其次，本领域技 术人员也应该知悉，说明书中所描述的实施例均属于优选实施例，所涉及的动作和模块并不一定是本申请所必须的。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、商品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、商品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、商品或者设备中还存在另外的相同要素。
以上对本申请所提供的一种掩膜版、掩膜版制备方法以及驱动背板母板，进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种掩膜版，所述掩膜版(20)包括多个掩膜图案区域(21)、位于所述多个掩膜图案区域(21)之间的过渡区域(22)以及包围所述多个掩膜图案区域(21)和所述过渡区域(22)的掩膜边缘区域(23)；
    所述过渡区域(22)中包括厚度小于所述掩膜边缘区域的厚度的第一半刻子区域(221)。
  2. 根据权利要求1所述的掩膜版，所述第一半刻子区域(221)的厚度与所述掩膜边缘区域(23)的厚度之间的比值大于或等于20％，且小于或等于50％。
  3. 根据权利要求2所述的掩膜版，所述第一半刻子区域(221)的厚度大于或等于20微米，且小于或等于50微米。
  4. 根据权利要求1所述的掩膜版，所述掩膜图案区域(21)包括多个驱动背板掩膜图案(24)，所述第一半刻子区域(221)与所述驱动背板掩膜图案(24)之间的最小距离大于1毫米。
  5. 根据权利要求1-4任一所述的掩膜版，所述多个掩膜图案区域中，第一掩膜图案区域(211)和第二掩膜图案区域(212)之间的过渡区域(22)中的第一半刻子区域(221)的数量为至少两个，至少两个所述第一半刻子区域(221)沿所述第一掩膜图案区域(211)和所述第二掩膜图案区域(212)的排布方向排布。
  6. 根据权利要求1-4任一所述的掩膜版，所述多个掩膜图案区域中，第一掩膜图案区域(211)和第二掩膜图案区域(212)之间的过渡区域(22)中的第一半刻子区域(221)的数量为至少两个，至少两个所述第一半刻子区域(221)的排布方向垂直于所述第一掩膜图案区域(211)和所述第二掩膜图案区域(212)的排布方向。
  7. 根据权利要求5或6所述的掩膜版，至少两个所述第一半刻子区域(221)的形状全等。
  8. 根据权利要求7所述的掩膜版，至少两个所述第一半刻子区域(221)均呈条状，且长度方向与至少两个所述第一半刻子区域(221)的排布方向垂直。
  9. 根据权利要求1-8任一所述的掩膜版，所述掩膜图案区域(21)包括多个驱动背板掩膜图案(24)以及所述多个驱动背板掩膜图案之间的间隔区域(25)，至少一个所述间隔区域(25)中具有至少一个厚度小于所述掩膜边缘区 域(23)的厚度的第二半刻子区域(251)。
  10. 根据权利要求9所述的掩膜版，所述驱动背板掩膜图案(24)呈长方形，所述多个驱动背板掩膜图案(24)包括至少一列沿平行于所述驱动背板掩膜图案(24)的长边的方向排布的驱动背板掩膜图案，一列所述驱动背板掩膜图案(24)中，相邻的两个驱动背板掩膜图案(24)之间的间隔区域(25)具有至少一个所述第二半刻子区域(251)。
  11. 根据权利要求9所述的掩膜版，所述驱动背板掩膜图案(24)呈长方形，所述多个驱动背板掩膜图案(24)包括至少一行沿垂直于所述驱动背板掩膜图案的长边的方向排布的驱动背板掩膜图案，一行所述驱动背板掩膜图案(24)中，相邻的两个驱动背板掩膜图案(24)之间的间隔区域(25)具有至少一个所述第二半刻子区域(251)。
  12. 根据权利要求9所述的掩膜版，所述第一半刻子区域(221)的厚度和所述第二半刻子区域(251)的厚度相等。
  13. 根据权利要求9所述的掩膜版，所述第二半刻子区域(251)与所述掩膜图案区域(24)之间的最小距离大于1毫米。
  14. 根据权利要求9所述的掩膜版，所述第二半刻子区域(251)的厚度与所述掩膜边缘区域(23)的厚度之间的比值大于或等于20％，且小于或等于50％。
  15. 根据权利要求14所述的掩膜版，所述第二半刻子区域(251)的厚度大于或等于20微米，且小于或等于50微米。
  16. 根据权利要求9-15任一所述的掩膜版，所述掩膜图案区域(21)中第二半刻子区域(251)的数量为至少两个，至少两个所述第二半刻子区域(251)的形状全等。
  17. 根据权利要求1所述的掩膜版，所述掩膜图案区域(21)包括多个驱动背板掩膜图案(24)以及所述多个驱动背板掩膜图案(24)之间的间隔区域(25)，至少一个所述间隔区域(25)中具有至少一个厚度小于所述掩膜边缘区域(23)的厚度的第二半刻子区域(251)；
    所述掩膜图案区域(21)包括多个驱动背板掩膜图案(24)，所述第一半刻子区域(221)与所述驱动背板掩膜图案(24)之间的最小距离大于1毫米；
    所述第一半刻子区域(221)的厚度与所述掩膜边缘区域(23)的厚度之间的比值大于或等于20％，且小于或等于50％；
    所述驱动背板掩膜图案(24)呈长方形，所述多个驱动背板掩膜图案(24)包括至少一列沿平行于所述驱动背板掩膜图案的长边的方向排布的驱动背板掩膜图案(24)，一列所述驱动背板掩膜图案(24)中，相邻的两个驱动背板掩膜图案(24)之间的间隔区域(25)具有至少一个所述第二半刻子区域(251)；
    所述第二半刻子区域(251)的厚度与所述掩膜边缘区域(23)的厚度之间的比值大于或等于20％，且小于或等于50％。
  18. 一种掩膜版的制备方法，用于制备权利要求1-17任一所述的掩膜版，所述方法包括：
    提供掩膜版基材；
    对所述掩膜版基材进行半刻蚀处理，得到掩膜版，所述掩膜版包括多个掩膜图案区域、位于所述多个掩膜图案区域之间的过渡区域以及包围所述多个掩膜图案区域和所述过渡区域的掩膜边缘区域，所述过渡区域中包括至少一个厚度小于所述掩膜边缘区域的厚度的第一半刻子区域。
  19. 根据权利要求18所述的方法，所述掩膜图案区域包括多个驱动背板掩膜图案以及所述多个驱动背板掩膜图案之间的间隔区域，至少一个所述间隔区域中具有至少一个厚度小于所述掩膜边缘区域的厚度的第二半刻子区域。
  20. 一种驱动背板母板，所述驱动背板母板由权利要求1-17任一所述权利要求提供的掩膜版制成。
PCT/CN2020/114867 2019-09-17 2020-09-11 一种掩膜版、掩膜版制备方法以及驱动背板母板 WO2021052259A1 (zh)

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