WO2021052257A1 - Black bismuth tungstate photocatalyst, preparation method, and application - Google Patents
Black bismuth tungstate photocatalyst, preparation method, and application Download PDFInfo
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- WO2021052257A1 WO2021052257A1 PCT/CN2020/114816 CN2020114816W WO2021052257A1 WO 2021052257 A1 WO2021052257 A1 WO 2021052257A1 CN 2020114816 W CN2020114816 W CN 2020114816W WO 2021052257 A1 WO2021052257 A1 WO 2021052257A1
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- bismuth tungstate
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- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 65
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 65
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 239000011941 photocatalyst Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 230000001699 photocatalysis Effects 0.000 claims abstract description 15
- 238000009832 plasma treatment Methods 0.000 claims abstract description 12
- 230000009467 reduction Effects 0.000 claims abstract description 9
- 230000031700 light absorption Effects 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 4
- 208000028659 discharge Diseases 0.000 claims description 31
- 239000010453 quartz Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000008240 homogeneous mixture Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- WUTHJWCAESRVMV-UHFFFAOYSA-N [W].[Bi] Chemical compound [W].[Bi] WUTHJWCAESRVMV-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 2
- 238000006722 reduction reaction Methods 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000009210 therapy by ultrasound Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005495 cold plasma Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000010757 Reduction Activity Effects 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B01J35/39—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/30—Tungsten
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/31—Chromium, molybdenum or tungsten combined with bismuth
-
- B01J35/30—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/341—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
- B01J37/347—Ionic or cathodic spraying; Electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/349—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of flames, plasmas or lasers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/40—Carbon monoxide
Definitions
- the invention relates to a preparation method of a black bismuth tungstate photocatalyst, belonging to the technical field of preparation methods of photocatalytic materials, and the specific application direction is photocatalytic CO 2 reduction.
- Bismuth tungstate (Bi 2 WO 6 ), as a photocatalyst with a certain visible light response, has been widely studied and applied in the degradation of organic pollutants and CO 2 reduction.
- the high carrier recombination rate of the traditional bismuth tungstate catalyst affects its photocatalytic efficiency. Therefore, the modification of the traditional bismuth tungstate catalyst to improve its photocatalytic efficiency becomes more and more important.
- the existing photocatalyst modification methods mainly include morphology control, precious metal deposition, semiconductor recombination and defect control. In recent years, the use of plasma to modify the surface of the photocatalyst can greatly improve the catalytic performance.
- Plasma refers to a gas that is partially or completely ionized, and the sum of the positive and negative charges carried by free electrons and ions completely cancels out, showing electrical neutrality on a macroscopic scale.
- the temperature of the plasma it can be divided into high-temperature plasma (thermonuclear fusion plasma) and low-temperature plasma.
- Low-temperature plasma includes thermal plasma (plasma arc, plasma torch, etc.) and cold plasma (low-pressure AC and DC, radio frequency, microwave plasma, high-pressure dielectric barrier discharge, corona discharge, RF discharge, etc.).
- thermal plasma plasma arc, plasma torch, etc.
- cold plasma low-pressure AC and DC, radio frequency, microwave plasma, high-pressure dielectric barrier discharge, corona discharge, RF discharge, etc.
- active particles in the low-temperature cold plasma which can react with the surface of the material in contact, so they are used to modify the surface of the material.
- Dielectric barrier discharge is a non-equilibrium gas discharge with an insulating medium inserted into the discharge space, also known as dielectric barrier corona discharge or silent discharge.
- Dielectric barrier discharge can work at high pressure and a wide frequency range, and can usually generate plasma under normal pressure.
- the power frequency can range from 50 Hz to 1 MHz.
- Dielectric barrier discharge plasma processing photocatalyst has the characteristics of mild processing conditions, short reaction time, and low energy consumption.
- the purpose of the present invention is to address the disadvantages of low visible light utilization of traditional bismuth tungstate photocatalyst materials, use dielectric barrier discharge to generate plasma in different atmospheres, and process white bismuth tungstate to obtain black bismuth tungstate photocatalyst, plasma
- the bulk treatment reduces the bismuth element on the surface of the bismuth tungstate, promotes the separation of photogenerated holes and electrons, broadens the light absorption range, and improves the photocatalytic CO 2 reduction ability.
- a preparation method of black bismuth tungstate photocatalyst includes the following steps:
- step (1) the amount of white bismuth tungstate is 5-20mg; the amount of absolute ethanol is 2-4mL; the ultrasonic power is 100-150W, the ultrasonic time is 5-10min; the quartz plate used The thickness is 0.5mm.
- the dielectric barrier discharge power is 50-100 W; the reaction gas is argon, ammonia or hydrogen, the treatment time is 1-5 min, and the gas flow rate is 100-200 mL/min.
- step (3) the amount of the absolute ethanol is 1-2 mL; the ultrasonic power is 50-100 W, the ultrasonic time is 3-5 min; the thickness of the quartz plate used is 0.5 mm.
- step (4) the dielectric barrier discharge power, processing time and gas flow are changed, the dielectric barrier discharge power is 100-150W; the reaction gas is argon, ammonia or hydrogen, and the processing time is 5 -15min, the gas flow rate is 200-300mL/min.
- the method of the present invention prepares a black bismuth tungstate photocatalytic material.
- the invention adopts a dielectric barrier discharge plasma treatment method, has the characteristics of mild treatment conditions, short reaction time, low energy consumption, and environmental friendliness, is suitable for mass production, and has certain application prospects.
- the surface of the black bismuth tungstate photocatalyst prepared by the invention contains bismuth element, which promotes the separation of photo-generated holes and electrons, and at the same time has higher visible light absorption, and has certain application prospects in the aspect of photocatalytic CO 2 reduction.
- FIG. 1 is a color comparison diagram of bismuth tungstate before and after plasma treatment in Example 1.
- FIG. 1 is a color comparison diagram of bismuth tungstate before and after plasma treatment in Example 1.
- FIG. 2 shows the XRD patterns of bismuth tungstate before and after plasma treatment in Example 1.
- FIG. 3 is the ultraviolet-visible diffuse reflection spectrum of bismuth tungstate before and after plasma treatment in Example 1.
- Example 4 is a comparison diagram of CO 2 reduction activity of bismuth tungstate before and after plasma treatment in Example 1.
- Example 1 Weigh 10 mg of white bismuth tungstate and add 2 mL of absolute ethanol to ultrasonic treatment, the ultrasonic power is 150 W, and the ultrasonic time is 8 min. Then, the mixed solution was evenly coated on a quartz wafer with a thickness of 0.5mm. After it was completely dried, it was put into a dielectric barrier reactor for the first treatment. The reactor was fed with hydrogen at a constant rate of 150mL/min, and the discharge power was 80W. , The processing time is 5min. After the treatment, the bismuth tungstate was collected again and dispersed again with 2 mL of absolute ethanol, the ultrasonic power was 100 W, the ultrasonic time was 5 min, and the mixed solution was uniformly coated on the quartz plate. Put the completely dried quartz chip into a dielectric barrier reactor for the second treatment. The reactor is fed with 300 mL/min hydrogen at a constant speed, the discharge power is 120W, and the treatment time is 10min, to obtain black bismuth tungstate.
- Example 2 Weigh 5 mg of white bismuth tungstate and add 2 mL of absolute ethanol to ultrasonic treatment, the ultrasonic power is 100 W, and the ultrasonic time is 5 min. Then, the mixed solution was evenly coated on a quartz wafer with a thickness of 0.5 mm. After it was completely dried, it was put into a dielectric barrier reactor for the first treatment. The reactor was fed with argon gas at a uniform rate of 100 mL/min, and the discharge power was 50W, the processing time is 3min.
- the bismuth tungstate was collected again and dispersed again with 2 mL of absolute ethanol, the ultrasonic power was 50 W, and the ultrasonic time was 3 min, and the mixed solution was uniformly coated on the quartz plate.
- the completely dried quartz chip into a dielectric barrier reactor for the second treatment.
- 300mL/min of argon gas is introduced at a constant speed, the discharge power is 100W, and the treatment time is 5min to obtain black bismuth tungstate. .
- Example 3 Weigh 20 mg of white bismuth tungstate and add 4 mL of absolute ethanol to ultrasonic treatment, the ultrasonic power is 150 W, and the ultrasonic time is 10 min. Then, the mixed solution was evenly coated on a quartz wafer with a thickness of 0.5 mm. After it was completely dried, it was put into a dielectric barrier reactor for the first treatment. The reactor was fed with 200 mL/min of ammonia at a uniform rate, and the discharge power was 100W, processing time is 5min. After the treatment, the bismuth tungstate was collected again and dispersed again with 2 mL of absolute ethanol, the ultrasonic power was 100 W, the ultrasonic time was 5 min, and the mixed solution was uniformly coated on the quartz plate.
- Figure 1 is a color comparison diagram of white bismuth tungstate and black bismuth tungstate before and after plasma treatment in Example 1. We can see that the color of bismuth tungstate changed from white to black after treatment.
- the structure test of the prepared sample was carried out on the German Bruker D8 ray diffractometer (XRD) (Cu-K ⁇ ray, The range is 10°-80°), and the scan rate is 7°min -1 .
- XRD German Bruker D8 ray diffractometer
- Figure 2 in Example 1, the black bismuth tungstate before and after the treatment is compared with the white bismuth tungstate. Except for the corresponding peaks of bismuth tungstate, the other peaks all point to the peaks of the bismuth element, indicating that the plasma treatment of bismuth The simple substance is restored.
- Figure 3 shows the ultraviolet-visible diffuse reflectance spectra of white bismuth tungstate and black bismuth tungstate before and after plasma treatment in Example 1. We can see that the light absorption range of black bismuth tungstate is significantly expanded.
- Example 4 Weigh 10 mg of the catalyst prepared in Example 1, and dissolve it in the prepared solution (6 mL acetonitrile, 4 mL H 2 O, 2 mL TEOA) by ultrasound for 10 minutes.
- the reaction system is at a temperature of 10°C and a pressure of 0.75 MPa, 300W xenon lamp (PLS-SXE 300C (BF), Perfectlight) under irradiation.
- GC-2002 gas chromatography system and thermal conductivity detector produced by Shanghai Kechuang Chromatography Instrument Co., Ltd. were used for gas product analysis.
- Photocatalytic activity test The photocatalytic CO 2 reduction performance test of the synthesized sample was carried out in a photocatalytic CO 2 reduction reaction instrument model Labsolar-6A produced by PerfectLight.
- Figure 4 is a comparison diagram of the rate of photocatalytic CO 2 reduction to CO. It can be seen from the figure that the performance of black bismuth tungstate is greatly improved compared with untreated white bismuth tungstate.
Abstract
Description
Claims (5)
- 一种黑色钨酸铋光催化剂的制备方法,其特征在于,利用介质阻挡放电,在不同气氛下产生等离子体,对白色钨酸铋进行处理,得到黑色钨酸铋光催化剂,等离子体处理使得钨酸铋表面还原出铋单质,促进了光生空穴和电子的分离,同时拓宽了光吸收范围,提高了光催化CO 2还原能力,具体步骤如下: A preparation method of black bismuth tungstate photocatalyst is characterized in that the dielectric barrier discharge is used to generate plasma in different atmospheres, and white bismuth tungstate is processed to obtain black bismuth tungstate photocatalyst. The plasma treatment makes tungsten Bismuth is reduced on the surface of bismuth acid, which promotes the separation of photo-generated holes and electrons, broadens the light absorption range, and improves the photocatalytic CO 2 reduction ability. The specific steps are as follows:(1)称取白色钨酸铋和无水乙醇经超声分散,形成均匀混合物,将混合物均匀涂敷在石英片上,然后进行烘干;(1) Weigh white bismuth tungstate and absolute ethanol and disperse ultrasonically to form a homogeneous mixture, uniformly coat the mixture on the quartz plate, and then dry;(2)将烘干的带有白色钨酸铋的石英片放置于介质阻挡放电反应器中,以一定的功率和时间进行等离子体放电处理,处理过程中匀速通入反应气体;(2) Place the dried quartz plate with white bismuth tungstate in a dielectric barrier discharge reactor, perform plasma discharge treatment with a certain power and time, and pass in the reaction gas at a uniform speed during the treatment;(3)将第一次等离子体处理过后的钨酸铋收集起来用无水乙醇重新超声分散,形成均匀混合物,将混合物均匀涂敷在石英片上,然后进行烘干;(3) Collect the bismuth tungstate after the first plasma treatment and re-disperse it ultrasonically with absolute ethanol to form a homogeneous mixture. The mixture is evenly coated on the quartz plate, and then dried;(4)将完全烘干的带有钨酸铋的石英片放置于介质阻挡放电反应器中进行二次处理,处理过程中匀速通入反应气体,处理结束最终得到黑色钨酸铋光催化材料。(4) The completely dried quartz plate with bismuth tungstate is placed in a dielectric barrier discharge reactor for secondary treatment. During the treatment process, the reaction gas is introduced at a constant speed. After the treatment, the black bismuth tungstate photocatalytic material is finally obtained.
- 如权利要求1所述的一种黑色钨酸铋光催化剂的制备方法,其特征在于,步骤(1)中,所述的白色钨酸铋用量为5-20mg;无水乙醇用量为2-4mL;超声功率为100-150W,超声时间为5-10min;所用石英片厚度为0.5mm。The method for preparing a black bismuth tungstate photocatalyst according to claim 1, wherein in step (1), the amount of white bismuth tungstate is 5-20 mg; the amount of anhydrous ethanol is 2-4 mL ; The ultrasonic power is 100-150W, the ultrasonic time is 5-10min; the thickness of the quartz plate used is 0.5mm.
- 如权利要求1所述的一种黑色钨酸铋光催化剂的制备方法,其特征在于,步骤(2)中,所述的介质阻挡放电功率为50-100W;反应气体为氩气、氨气或氢气,处理时间为1-5min,气体流量为100-200mL/min。The method for preparing a black bismuth tungstate photocatalyst according to claim 1, wherein in step (2), the dielectric barrier discharge power is 50-100W; the reaction gas is argon, ammonia or For hydrogen, the treatment time is 1-5min, and the gas flow rate is 100-200mL/min.
- 如权利要求1所述的一种黑色钨酸铋光催化剂的制备方法,其特征在于,步骤(3)中,所述的无水乙醇用量为1-2mL;超声功率为50-100W,超声时间为3-5min;所用石英片厚度为0.5mm。The method for preparing a black bismuth tungstate photocatalyst according to claim 1, wherein in step (3), the amount of the absolute ethanol is 1-2mL; the ultrasonic power is 50-100W, and the ultrasonic time is 50-100W. It is 3-5min; the thickness of the quartz plate used is 0.5mm.
- 如权利要求1所述的一种黑色钨酸铋光催化剂的制备方法,其特征在于,步骤(4)中,改变介质阻挡放电功率、处理时间和气体流量,所述的介质阻挡放电功率为100-150W;反应气体为氩气、氨气或氢气,处理时间为5-15min,气体流量为200-300mL/min。The method for preparing a black bismuth tungstate photocatalyst according to claim 1, wherein in step (4), the dielectric barrier discharge power, processing time and gas flow are changed, and the dielectric barrier discharge power is 100 -150W; the reaction gas is argon, ammonia or hydrogen, the processing time is 5-15min, and the gas flow rate is 200-300mL/min.
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