GB2592516A - Black bismuth tungstate photocatalyst, preparation method, and application - Google Patents
Black bismuth tungstate photocatalyst, preparation method, and application Download PDFInfo
- Publication number
- GB2592516A GB2592516A GB2105335.0A GB202105335A GB2592516A GB 2592516 A GB2592516 A GB 2592516A GB 202105335 A GB202105335 A GB 202105335A GB 2592516 A GB2592516 A GB 2592516A
- Authority
- GB
- United Kingdom
- Prior art keywords
- bismuth tungstate
- treatment
- black
- dielectric barrier
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 71
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 71
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 239000011941 photocatalyst Substances 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 230000001699 photocatalysis Effects 0.000 claims abstract description 16
- 238000009832 plasma treatment Methods 0.000 claims abstract description 14
- 230000009467 reduction Effects 0.000 claims abstract description 10
- 230000031700 light absorption Effects 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 4
- 208000028659 discharge Diseases 0.000 claims description 35
- 239000010453 quartz Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 210000002381 plasma Anatomy 0.000 claims description 23
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000012495 reaction gas Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000008240 homogeneous mixture Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000000643 oven drying Methods 0.000 claims description 4
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000011259 mixed solution Substances 0.000 description 12
- 238000006722 reduction reaction Methods 0.000 description 8
- 238000000527 sonication Methods 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005495 cold plasma Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910002483 Cu Ka Inorganic materials 0.000 description 1
- 230000010757 Reduction Activity Effects 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B01J35/39—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/30—Tungsten
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
- B01J23/31—Chromium, molybdenum or tungsten combined with bismuth
-
- B01J35/30—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/341—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
- B01J37/347—Ionic or cathodic spraying; Electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/349—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of flames, plasmas or lasers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/40—Carbon monoxide
Abstract
A preparation method for a black bismuth tungstate photocatalyst. Dielectric barrier discharge is used to generate plasma under different atmospheres so as to treat white bismuth tungstate to obtain a black bismuth tungstate photocatalyst. A bismuth elementary substance is obtained by means of reduction on the surface of bismuth tungstate by means of plasma treatment. Separation between photo-generated holes and electrons is promoted; furthermore, the light absorption range is widened and the photocatalytic CO2 reduction capability is improved.
Description
BLACK BISMUTH TUNGSTATE PHOTOCATALYST AND PREPARATION METHOD AND USE THEREOF
Technical Field
The present invention relates to a preparation method of a black bismuth tungstate photocatalyst, and belongs to the technical field of preparation methods of photocatalytic materials, and specifically, is used for photocatalytic CO2 reduction.
Background
Bismuth tungstate (Bi2W06), as a photocatalyst with a certain visible light response, has been widely investigated and applied in, for example, the degradation of organic pollutants and the CO2 reduction. However, since the high carrier recombination rate of the conventional bismuth tungstate catalysts affects their photocatalytic efficiency, the modification of the conventional bismuth tungstate catalysts to improve their photocatalytic efficiency becomes more and more important. The existing modification methods of the photocatalysts mainly include morphology control, deposition of precious metal, semiconductor composite, defect control and the like. In recent years, the use of plasma to modify the surface of photocatalysts can greatly improve the catalytic performance.
Plasma refers to a gas that is partially or completely ionized, where the sums of the positive and negative charges carried by free electrons and ions completely counteract, so it appears to be electrically neutral on a macroscopic scale. According to the plasma temperature, the plasma can be classified into high-temperature plasma (thermonuclear fusion plasma) and low-temperature plasma. The low-temperature plasma further includes hot plasma (plasma arc, plasma torch, and the like) and cold plasma (low-pressure AC/DC, radio frequency, microwave plasma, and high-pressure dielectric barrier discharge, corona discharge, RF discharge, and the like). A large number of active particles exist in the low-temperature cold plasma and can react with the material surface with which they contact, so they are used to modify the surface of materials.
The dielectric barrier discharge (DBD) is a non-equilibrium gas discharge with an insulating medium inserted in the discharge space. It is also called dielectric barrier corona discharge or silent discharge. The dielectric barrier discharge can be operated at a high pressure and in a wide frequency range, and can usually generate plasmas at normal pressure and a power frequency which may be from 50 Hz to 1 MHz. The treatment of photocatalysts with the dielectric barrier discharge plasma has characteristics such as mild treatment conditions, short reaction time and low energy consumption.
Summary
An objective of the present invention is to provide a black bismuth tungstate photocatalyst by treating white bismuth tungstate with plasmas generated by dielectric barrier discharge under different atmospheres to address the disadvantage of the low visible light utilization of the conventional bismuth tungstate photocatalytic materials, wherein the bismuth tungstate is reduced to elemental bismuth on a surface by plasma treatment, thereby promoting the separation of photogenerated holes from electrons, and also expanding the light absorption range, to improve the photocatalytic CO2 reduction ability.
In order to achieve the above objective, the following technical solutions are mainly employed.
A preparation method of a black bismuth tungstate photocatalyst includes the following steps: (1) weighing white bismuth tungstate and absolute ethanol for ultrasonic dispersion to form a homogeneous mixture, and uniformly applying the mixture on a quartz sheet, followed by oven-drying; (2) placing the oven-dried quartz sheet with the white bismuth tungstate into a dielectric barrier discharge reactor, and performing plasma discharge treatment at a predetermined power for a predetermined time, wherein a reaction gas is introduced at a constant rate during the plasma discharge treatment; (3) collecting the bismuth tungstate after the first plasma treatment, re-dispersing ultrasonically the bismuth tungstate with absolute ethanol to form a homogeneous mixture, and applying the mixture uniformly on a quartz sheet, followed by oven-drying; and (4) placing the completely oven-dried quartz sheet with the bismuth tungstate into the dielectric barrier discharge reactor for secondary treatment, wherein a reaction gas is introduced at a constant rate during the treatment, so as to finally obtain the black bismuth tungstate photocatalytic material when the treatment is completed.
In the above preparation method, in Step (I), the white bismuth tungstate is used in an amount of 5-20 mg; the absolute ethanol is used in an amount of 2-4 mL; the ultrasonic dispersion is performed at an ultrasonic power of 100-150W for an ultrasonic time of 5-10 min; and the quartz sheet used has a thickness of 0.5 mm.
In the above preparation method, in Step (2), the power of the dielectric barrier discharge is 50-100 W; the reaction gas is argon, ammonia or hydrogen, the plasma discharge treatment is performed for a treatment time of 1-5 min, and the reaction gas is introduced at a gas flow rate of 100-200 mumin.
In the above preparation method, in Step (3), the absolute ethanol is used in an amount of 1-2 mL; the bismuth tungstate is re-dispersed ultrasonically at an ultrasonic power of 50-100 W for an ultrasonic time of 3-5 min; and the quartz sheet used has a thickness of 0.5 mm.
In the above preparation method, in Step (4), the power of the dielectric barrier discharge, the treatment time and the gas flow rate are changed, wherein the power of the dielectric barrier discharge is 100-150 W; the reaction gas is argon, ammonia or hydrogen, the treatment time is 5-15 min, and the gas flow rate is 200-300 mL/min.
A black bismuth tungstate photocatalytic material is prepared by the method of the present invention.
The present invention has the following beneficial effects.
The present invention adopts the treatment method with the dielectric barrier discharge plasma, and has the characteristics of mild treatment conditions, short reaction time, low energy consumption and environmental friendliness. The present invention is suitable for mass production, and has certain application prospects.
The surface of the black bismuth tungstate photocatalyst prepared by the present invention contains elemental bismuth, which promotes the separation of photogenerated holes from electrons, and also allows a relatively high visible light absorption, and the black bismuth tungstate photocatalyst has certain application prospects in photocatalytic CO2 reduction.
Brief Description of the Drawings
FIG. 1 is a comparison photograph of the color of bismuth tungstate before and after plasma treatment in Example I. FIG. 2 shows XRD patterns of bismuth tungstate before and after plasma treatment in Example I, FIG. 3 shows UV-Vis diffuse reflectance spectra of bismuth tungstate before and after plasma treatment in Example 1.
FIG. 4 is a comparison graph of the CO2 reduction activity of bismuth tungstate before and after plasma treatment in Example 1.
Detailed Description of the Embodiments
The present invention is described below in detail in combination with particular embodiments, and is not limited thereto.
Experimental methods employed in the following examples are all conventional methods unless particularly indicated.
Materials, reagents, and the like employed in the following examples are all commercially available unless indicated particularly.
Example 1: 10 mg of white bismuth tungstate was weighed and added into 2 mL of absolute ethanol for sonication at an ultrasonic power of 150 W for an ultrasonic time of 8 min to form a mixed solution. Then, the mixed solution was uniformly applied on a 0.5 mm thick quartz sheet, and after completely oven-dried, the quartz sheet was placed into a dielectric barrier reactor for the first treatment. Hydrogen was introduced into the reactor at a constant rate of 150 mL/min. The discharge power was 80 W, and the treatment time was 5 min. The bismuth tungstate after the treatment was re-collected and re-dispersed ultrasonically with 2 mL of absolute ethanol at an ultrasonic power of 100 W for an ultrasonic time of 5 min to form a mixed solution. The mixed solution was uniformly applied on a quartz sheet. The completely oven-dried quartz sheet was placed into the dielectric barrier reactor for the second treatment. Hydrogen was introduced into the reactor at a constant rate of 300 mL/min. The discharge power was 120 W, and the treatment time was 10 min. Therefore, the black bismuth tungstate was obtained.
Example 2: 5 mg of white bismuth tungstate was weighed and added into 2 mL of absolute ethanol for sonication at an ultrasonic power of 100 W for an ultrasonic time of 5 min to form a mixed solution. Then, the mixed solution was uniformly applied on a 0.5 mm thick quartz sheet, and after completely oven-dried, the quartz sheet was placed into a dielectric barrier reactor for the first treatment. Argon was introduced into the reactor at a constant rate of 100 mL/min. The discharge power was 50 W, and the treatment time was 3 min. The bismuth tungstate after the treatment was re-collected and re-dispersed ultrasonically with 2 mL of absolute ethanol at an ultrasonic power of 50 W for an ultrasonic time of 3 min to form a mixed solution. The mixed solution was uniformly applied on a quartz sheet. The completely oven-dried quartz sheet was placed into the dielectric barrier reactor for the second treatment. Argon was introduced into the reactor at a constant rate of 300 mL/min. The discharge power was 100 W, and the treatment time was 5 min. Therefore, the black bismuth tungstate was obtained.
Example 3: 20 mg of white bismuth tungstate was weighed and added into 4 mL of absolute ethanol for sonication at an ultrasonic power of 150 W for an ultrasonic time of 10 min to form a mixed solution. Then, the mixed solution was uniformly applied on a 0.5 mm thick quartz sheet, and after completely oven-dried, the quartz sheet was placed into a dielectric barrier reactor for the first treatment. Ammonia was introduced into the reactor at a constant rate of 200 mL/min. The discharge power was 100 W, and the treatment time was 5 min. The bismuth tungstate after the treatment was re-collected and re-dispersed ultrasonically with 2 mL of absolute ethanol at an ultrasonic power of 100 W for an ultrasonic time of 5 min to form a mixed solution. The mixed solution was uniformly applied on a quartz sheet. The completely oven-dried quartz sheet was placed into the dielectric barrier reactor for the second treatment. Ammonia was introduced into the reactor at a constant rate of 300 mL/min. The discharge power was 150 W, and the treatment time was 15 min. Therefore, the black bismuth tungstate was obtained.
FIG. 1 is a comparison photograph of the color of white bismuth tungstate before the plasma treatment and black bismuth tungstate after the plasma treatment in Example 1. From FIG. 1, it can be seen that after the treatment, the bismuth tungstate turns from white to black in color.
The structure of the prepared sample was tested on the Germany Model Bruker D8 X-ray diffractometer (XRD) (Cu-Ka ray, k=1.5418 A, range 10°-80°) at a scanning speed of 70 min-1. As shown in FIG. 2, when black bismuth tungstate after the treatment is compared with white bismuth tungstate before the treatment in Example 1, except for the peaks corresponding to bismuth tungstate, the other peaks appeared are all attributed to elemental bismuth, indicating that elemental bismuth was formed by reduction through plasma treatment.
FIG. 3 shows UV-Vis diffuse reflectance spectra of white bismuth tungstate before the plasma treatment and black bismuth tungstate after the plasma treatment in Example 1, From FIG. 3, it can be seen that the light absorption range of the black bismuth tungstate is significantly expanded.
Example 4: 10 mg of the catalyst prepared in Example 1 was weighed, and dissolved in a formulated solution (6 mL of acetonitrile, 4 mL of H20, and 2 mL of TEOA) by sonication for 10 min. The reaction system was reacted at a temperature of 10°C and a pressure of 0.75 MPa with the irradiation of a 300 W xenon lamp (PLS-SXE 300C (BE), Perfectlight). Gaseous products were analyzed with a GC-2002 gas chromatography system and a thermal conductivity detector manufactured by Shanghai ICECHUANG Chromatography Instruments Co., Ltd. Photocatalytic activity test: The photocatalytic CO2 reduction performance of the synthesized sample was tested in a photocatalytic CO, reduction reaction instrument of Model Labsolar-6A manufactured by PerfectLight CO,LTD. FIG. 4 is a comparison graph of the rate of photocatalytic CO2 reduction to CO. It can be seen from FIG. 4 that the performance of the prepared black bismuth tungstate is greatly improved, compared with the untreated white bismuth tungstate.
The above-disclosed contents are only preferred examples of the present invention. Without departing from the above methodological idea of the present invention, replacements and improvements based on common technical knowledge and conventional means in the art shall be all included in the protection scope of the present invention.
Claims (5)
- Claims What is claimed is: 1. A preparation method of a black bismuth tungstate photocatalyst, characterized in that the black bismuth tungstate photocatalyst is obtained by treating white bismuth tungstate with plasmas generated by dielectric barrier discharge under different atmospheres, wherein the bismuth tungstate is reduced to elemental bismuth on a surface by plasma treatment, thereby promoting separation of photogenerated holes from electrons, and also expanding a light absorption range, to improve photocatalytic CO, reduction ability, the method specifically comprises the following steps: (I) weighing white bismuth tungstate and absolute ethanol for ultrasonic dispersion to form a homogeneous mixture, and uniformly applying the mixture on a quartz sheet, followed by oven-drying; (2) placing the oven-dried quartz sheet with the white bismuth tungstate into a dielectric barrier discharge reactor, and performing plasma discharge treatment at a predetermined power for a predetermined time, wherein a reaction gas is introduced at a constant rate during the plasma discharge treatment; (3) collecting the bismuth tungstate after the first plasma treatment, re-dispersing ultrasonically the bismuth tungstate with absolute ethanol to form a homogeneous mixture, and applying the mixture uniformly on a quartz sheet, followed by oven-drying; and (4) placing the completely oven-dried quartz sheet with the bismuth tungstate into the dielectric barrier discharge reactor for secondary treatment, wherein a reaction gas is introduced at a constant rate during the treatment, so as to finally obtain the black bismuth tungstate photocatalytic material when the treatment is completed.
- 2. The preparation method of the black bismuth tungstate photocatalyst according to claim 1, characterized in that in Step (1), the white bismuth tungstate is used in an amount of 5-20 mg; the absolute ethanol is used in an amount of 2-4 m1_,, the ultrasonic dispersion is performed at an ultrasonic power of 100-150 W for an ultrasonic time of 5-10 min; and the quartz sheet used has a thickness of 0.5 mm.
- 3. The preparation method of the black bismuth tungstate photocatalyst according to claim 1, characterized in that in Step (2), the power of the dielectric barrier discharge is 50-100 W; the reaction gas is argon, ammonia or hydrogen, the plasma discharge treatment is performed for a treatment time of 1-5 min, and the reaction gas is introduced at a gas flow rate of 100-200 mumin.
- 4. The preparation method of the black bismuth tungstate photocatalyst according to claim 1, characterized in that in Step (3), the absolute ethanol is used in an amount of 1-2 mL; the bismuth tungstate is re-dispersed ultrasonically at an ultrasonic power of 50-100W for an ultrasonic time of 3-5 min; and the quartz sheet used has a thickness of 0.5 mm.
- 5. The preparation method of the black bismuth tungstate photocatalyst according to claim 1, characterized in that in Step (4), the power of the dielectric barrier discharge, the treatment time and the gas flow rate are changed, wherein the power of the dielectric barrier discharge is 100-150 W; the reaction gas is argon, ammonia or hydrogen, the treatment time is 5-15 min, and the gas flow rate is 200-300 mlimin.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910876678.9A CN110624535A (en) | 2019-09-17 | 2019-09-17 | Black bismuth tungstate photocatalyst as well as preparation method and application thereof |
| PCT/CN2020/114816 WO2021052257A1 (en) | 2019-09-17 | 2020-09-11 | Black bismuth tungstate photocatalyst, preparation method, and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB202105335D0 GB202105335D0 (en) | 2021-05-26 |
| GB2592516A true GB2592516A (en) | 2021-09-01 |
Family
ID=68971037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2105335.0A Pending GB2592516A (en) | 2019-09-17 | 2020-09-11 | Black bismuth tungstate photocatalyst, preparation method, and application |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN110624535A (en) |
| GB (1) | GB2592516A (en) |
| WO (1) | WO2021052257A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110624535A (en) * | 2019-09-17 | 2019-12-31 | 江苏大学 | Black bismuth tungstate photocatalyst as well as preparation method and application thereof |
| CN111905715A (en) * | 2020-06-22 | 2020-11-10 | 江苏中江材料技术研究院有限公司 | Plasma-induced Bi2MoO6Method for preparing photocatalyst |
| CN113117522A (en) * | 2021-05-28 | 2021-07-16 | 陕西科技大学 | CO reduction for improving Bi plasma photocatalyst2Method of activity |
| CN113967475B (en) * | 2021-09-15 | 2023-09-22 | 江苏大学 | Preparation method and application of plasma-induced layered nickel-cobalt double-metal hydroxide photocatalytic material |
| CN114132964B (en) * | 2022-02-07 | 2022-04-22 | 材料科学姑苏实验室 | Preparation method of amorphous black bismuth tungstate, amorphous black bismuth tungstate and application thereof |
| CN114950490B (en) * | 2022-05-12 | 2023-10-13 | 江苏大学 | Preparation of amination monolayer PtS by plasma technology 2 Quantum dot method |
| CN115323477A (en) * | 2022-08-10 | 2022-11-11 | 深圳大学 | Bismuth tungstate monocrystal and preparation method thereof |
| CN115414929B (en) * | 2022-08-18 | 2024-01-19 | 电子科技大学长三角研究院(湖州) | Heterojunction semiconductor photocatalyst, preparation method and application thereof |
| CN115364873A (en) * | 2022-08-22 | 2022-11-22 | 电子科技大学长三角研究院(湖州) | Hollow tubular ultrathin photocatalyst and preparation method thereof |
| CN115504469B (en) * | 2022-09-23 | 2024-02-27 | 重庆邮电大学 | System and method for cooperatively converting carbon dioxide by water-assisted plasma and photocatalyst |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104874811A (en) * | 2015-05-22 | 2015-09-02 | 武汉工程大学 | Preparing method of simple substance bismuth/bismuth compound nanocomposite with oxygen vacancies |
| US9630162B1 (en) * | 2007-10-09 | 2017-04-25 | University Of Louisville Research Foundation, Inc. | Reactor and method for production of nanostructures |
| CN106890565A (en) * | 2017-03-28 | 2017-06-27 | 广西大学 | A kind of method of carbon dioxide conversion |
| CN109569684A (en) * | 2018-11-09 | 2019-04-05 | 浙江工商大学 | Plasma modification metal oxide and the co-modified titanium dioxide nano-rod composite photo-catalyst of g- carbonitride and its preparation and application |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100516480B1 (en) * | 2003-05-16 | 2005-09-23 | 한국과학기술연구원 | Reduction method of catalysts using non-thermal plasma |
| SG11201402624QA (en) * | 2011-12-08 | 2014-06-27 | Univ Singapore | Photocatalytic metal oxide nanomaterials; method of making via h2-plasma treatment; use for organic waste decontamination in water |
| US20160376716A1 (en) * | 2015-06-29 | 2016-12-29 | Korea Advanced Institute Of Science And Technology | Method for improving solar energy conversion efficiency of semiconductor metal oxide photocatalysis using h2/n2 mixed gas plasma treatment |
| CN106807361B (en) * | 2017-02-28 | 2019-02-15 | 重庆工商大学 | A kind of unformed bismuth tungstate of bismuth-- bismuth oxide ternary organic composite photochemical catalyst and preparation method |
| CN106964339B (en) * | 2017-04-14 | 2020-04-21 | 武汉理工大学 | Carbon-doped ultrathin bismuth tungstate nanosheet photocatalytic material and preparation method thereof |
| CN107497413A (en) * | 2017-07-27 | 2017-12-22 | 东华大学 | A kind of preparation method of black titanium dioxide coating |
| CN109847732A (en) * | 2018-11-21 | 2019-06-07 | 电子科技大学 | A kind of method and application preparing titanium dioxide nanoplate based on corona treatment |
| CN109704398A (en) * | 2019-03-01 | 2019-05-03 | 洛阳师范学院 | A kind of normal pressure cold plasma preparation method of grey low-valence titanium oxide powder material |
| CN110624535A (en) * | 2019-09-17 | 2019-12-31 | 江苏大学 | Black bismuth tungstate photocatalyst as well as preparation method and application thereof |
-
2019
- 2019-09-17 CN CN201910876678.9A patent/CN110624535A/en active Pending
-
2020
- 2020-09-11 WO PCT/CN2020/114816 patent/WO2021052257A1/en active Application Filing
- 2020-09-11 GB GB2105335.0A patent/GB2592516A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9630162B1 (en) * | 2007-10-09 | 2017-04-25 | University Of Louisville Research Foundation, Inc. | Reactor and method for production of nanostructures |
| CN104874811A (en) * | 2015-05-22 | 2015-09-02 | 武汉工程大学 | Preparing method of simple substance bismuth/bismuth compound nanocomposite with oxygen vacancies |
| CN106890565A (en) * | 2017-03-28 | 2017-06-27 | 广西大学 | A kind of method of carbon dioxide conversion |
| CN109569684A (en) * | 2018-11-09 | 2019-04-05 | 浙江工商大学 | Plasma modification metal oxide and the co-modified titanium dioxide nano-rod composite photo-catalyst of g- carbonitride and its preparation and application |
Non-Patent Citations (1)
| Title |
|---|
| (ZHANG, Yao). "(Preparation of Nickel and Iron Based Catalysts Using Dielectric Barrier Discharge Plasma)" (China Doctoral Dissertations Full-Text Database, Engineering Sciance & Technology I), No. 08, 15 August 2018 (2018-08-15), ISSN: 1674-022X, page 84, paragraphs 1-3 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110624535A (en) | 2019-12-31 |
| WO2021052257A1 (en) | 2021-03-25 |
| GB202105335D0 (en) | 2021-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2592516A (en) | Black bismuth tungstate photocatalyst, preparation method, and application | |
| Chen et al. | Plasma assisted catalytic decomposition of CO2 | |
| Peng et al. | Ru-based multifunctional mesoporous catalyst for low-pressure and non-thermal plasma synthesis of ammonia | |
| Chen et al. | An overview of CO2 conversion in a microwave discharge: the role of plasma-catalysis | |
| Tu et al. | Plasma-assisted reduction of a NiO/Al2O3 catalyst in atmospheric pressure H2/Ar dielectric barrier discharge | |
| Chen et al. | Enhanced ambient ammonia photosynthesis by Mo-doped Bi5O7Br nanosheets with light-switchable oxygen vacancies | |
| Taghvaei et al. | Synthesis of supported nanocatalysts via novel non‐thermal plasma methods and its application in catalytic processes | |
| CN106582888B (en) | A kind of TiO2- Pd-PPy composite photo-catalyst and its preparation method and application | |
| Cui et al. | Plasma-assisted abatement of SF6 in a dielectric barrier discharge reactor: investigation of the effect of packing materials | |
| Liu et al. | Graphene decorated MoS 2 for eosin Y-sensitized hydrogen evolution from water under visible light | |
| Wang et al. | Effect of filling materials on CO2 conversion with a dielectric barrier discharge reactor | |
| CN110339852B (en) | CoO @ nitrogen and sulfur co-doped carbon material/CdS composite photocatalytic material, and preparation method and application thereof | |
| CN111905715A (en) | Plasma-induced Bi2MoO6Method for preparing photocatalyst | |
| He et al. | One-pot synthesis of C-doping and defects co-modified g-C3N4 for enhanced visible-light photocatalytic degradation of bisphenol A | |
| CN103601150A (en) | Tube-tube type plasma reactor for preparing hydrogen through ammonia decomposition | |
| Zheng et al. | Electron-assisted synthesis of gC 3 N 4/MoS 2 composite with dual defects for enhanced visible-light-driven photocatalysis | |
| Yang et al. | S/P co-doped g-C3N4 with secondary calcination for excellent photocatalytic performance | |
| CN109046391B (en) | Composite material, preparation method thereof and application thereof in hydrogen production through visible light decomposition of water | |
| CN110102349A (en) | A kind of α-Fe2O3The preparation of/TpPa-2 composite material and photolysis water hydrogen | |
| Wang et al. | Partial Sulphidation to Regulate Coordination Structure of Single Nickel Atoms on Graphitic Carbon Nitride for Efficient Solar H2 Evolution | |
| CN109876826B (en) | Preparation method of sulfur-rich vacancy photocatalyst | |
| CN112844371A (en) | Catalyst for photolysis of water to produce oxygen and preparation method thereof | |
| Tian et al. | Potassium gluconate-cooperative pore generation based on g-C3N4 nanosheets for highly efficient photocatalytic hydrogen production and antibiotic degradation | |
| CN115010101B (en) | Preparation method and application of carbon nitride nano-sheet with wide spectral response and high crystallinity | |
| Guan et al. | An effect of crucible volume on the microstructure and Photocatalytic activity of the prepared g-C3N4 |