WO2021042559A1 - Method for manufacturing thin film transistor, and thin film transistor - Google Patents

Method for manufacturing thin film transistor, and thin film transistor Download PDF

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Publication number
WO2021042559A1
WO2021042559A1 PCT/CN2019/118393 CN2019118393W WO2021042559A1 WO 2021042559 A1 WO2021042559 A1 WO 2021042559A1 CN 2019118393 W CN2019118393 W CN 2019118393W WO 2021042559 A1 WO2021042559 A1 WO 2021042559A1
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Prior art keywords
pattern
layer
photoresist pattern
positive photoresist
metal oxide
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PCT/CN2019/118393
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French (fr)
Chinese (zh)
Inventor
李展
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Tcl华星光电技术有限公司
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Publication of WO2021042559A1 publication Critical patent/WO2021042559A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Definitions

  • the application relates to the field of display, in particular to a method for preparing a thin film transistor and a thin film transistor.
  • liquid crystal display devices and organic light-emitting diode display devices are developing in the direction of large size and high resolution.
  • metal oxide materials represented by indium gallium zinc oxide have high mobility and have become The focus of research and development in the display field, and copper has the advantages of low resistivity and low cost, so it is generally used as the first choice of electrode material, but copper is easy to diffuse into the indium gallium zinc oxide semiconductor layer, which will affect the electrical performance of the device. Therefore, it is necessary to select a suitable material to block the diffusion of copper.
  • transparent conductive films such as indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide have been used as diffusion barriers to replace traditional molybdenum.
  • Metal materials such as titanium-molybdenum alloy can improve the transmittance and aperture ratio of display devices.
  • the traditional manufacturing process is used to etch the diffusion barrier layer composed of transparent conductive films such as indium gallium zinc oxide, indium zinc oxide, and aluminum-doped zinc oxide, it is easy to produce bottom cracks and damage the indium gallium zinc oxide.
  • the back channel layer causes problems such as damage, thereby affecting product yield and device stability.
  • the present application provides a method for preparing a conductive channel material and a thin film transistor, which can solve the problem that the existing transparent conductive film is used as the diffusion barrier layer material to avoid bottom cracks and damage to the indium gallium zinc oxide back channel layer. Technical problems that cause damage and other problems.
  • the present application provides a method for manufacturing a thin film transistor.
  • the manufacturing method includes:
  • a metal oxide layer, a metal layer, and a positive photoresist layer are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern, and a positive photoresist pattern is formed through an exposure and development process ;
  • a photoresist stripping process is used to remove the positive photoresist pattern on the first source and the first drain, so that the first source and the first drain leak out, and a photoresist is used
  • the lift-off process removes a portion of the negative photoresist pattern directly under the metal oxide layer, so as to remove a portion of the metal oxide layer directly above the negative photoresist pattern to form a second source electrode and The second drain, wherein the first source is located on the second source, and the first drain is located on the second drain.
  • the negative photoresist pattern and the positive photoresist pattern can be formed by using the same photomask:
  • the photomask includes a light-transmitting area, a first light-shielding area located on one side of the light-transmitting area, and a second light-shielding area located on the other side of the light-transmitting area, and the first light-shielding area is on the substrate
  • the orthographic projection on the substrate coincides with the orthographic projection of the first source electrode and the second source electrode on the substrate
  • the orthographic projection of the second light-shielding area on the substrate coincides with the orthographic projection of the first drain electrode and the The orthographic projections of the second drain electrode on the substrate coincide.
  • the step of depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern, and forming a negative photoresist pattern through an exposure and development process include:
  • the negative photoresist layer is exposed and developed by using the photomask as a mask to form a negative photoresist pattern.
  • the positive projection of the negative photoresist pattern on the substrate is in line with the light-transmitting area.
  • the orthographic projections on the substrate coincide.
  • the metal oxide layer, the metal layer, and the positive photoresist pattern are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern.
  • the step of forming a photoresist layer and forming a positive photoresist pattern through an exposure and development process includes:
  • the positive photoresist layer is exposed and developed using the photomask as a mask to form a positive photoresist pattern.
  • the positive photoresist pattern includes a first positive photoresist block and a second positive photoresist.
  • Block, the orthographic projection of the first positive photoresist block on the substrate coincides with the orthographic projection of the first light-shielding area on the substrate, and the second positive photoresist block is on the substrate
  • the orthographic projection of is coincident with the orthographic projection of the second shading area on the substrate.
  • the positive photoresist pattern on the first source and the first drain is removed by a photoresist stripping process, so that the first source
  • the step of leaking the electrode and the first drain includes:
  • the positive photoresist pattern on the first source and the first drain is expanded, softened, and dissolved by the photoresist stripper, so as to remove the positive photoresist pattern on the first source and the first drain.
  • the positive photoresist pattern on the electrode allows the first source electrode and the first drain electrode to leak out.
  • the negative photoresist pattern located directly under a part of the metal oxide layer is removed by using a photoresist lift-off process to remove the negative photoresist pattern directly above the negative photoresist pattern.
  • the step of removing part of the metal oxide layer to form a second source electrode and a second drain electrode includes:
  • a photoresist stripper is used to expand, soften and dissolve the negative photoresist pattern directly under the part of the metal oxide layer, thereby removing the negative photoresist pattern directly under the part of the metal oxide layer , To remove part of the metal oxide layer directly above the negative photoresist pattern to form a second source electrode and a second drain electrode.
  • the metal oxide layer is composed of a transparent conductive thin film material, and the transparent conductive thin film material includes indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide.
  • the thickness of the metal oxide layer is 20 nanometers to 60 nanometers.
  • the present application provides a method for manufacturing a thin film transistor.
  • the manufacturing method includes:
  • a metal oxide layer, a metal layer, and a positive photoresist layer are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern, and a positive photoresist pattern is formed through an exposure and development process ;
  • the positive photoresist pattern and the negative photoresist pattern are removed by a photoresist lift-off process to form a metal oxide pattern.
  • the metal oxide pattern includes a second source electrode and a second drain electrode, wherein the The first source is located on the second source, and the first drain is located on the second drain.
  • the negative photoresist pattern and the positive photoresist pattern can be formed by using the same photomask:
  • the photomask includes a light-transmitting area, a first light-shielding area located on one side of the light-transmitting area, and a second light-shielding area located on the other side of the light-transmitting area, and the first light-shielding area is on the substrate
  • the orthographic projection on the substrate coincides with the orthographic projection of the first source electrode and the second source electrode on the substrate
  • the orthographic projection of the second light-shielding area on the substrate coincides with the orthographic projection of the first drain electrode and the The orthographic projections of the second drain electrode on the substrate coincide.
  • the step of depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern, and forming a negative photoresist pattern through an exposure and development process include:
  • the negative photoresist layer is exposed and developed by using the photomask as a mask to form a negative photoresist pattern.
  • the positive projection of the negative photoresist pattern on the substrate is in line with the light-transmitting area.
  • the orthographic projections on the substrate coincide.
  • the metal oxide layer, the metal layer, and the positive photoresist pattern are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern.
  • the step of forming a photoresist layer and forming a positive photoresist pattern through an exposure and development process includes:
  • the positive photoresist layer is exposed and developed using the photomask as a mask to form a positive photoresist pattern.
  • the positive photoresist pattern includes a first positive photoresist block and a second positive photoresist.
  • Block, the orthographic projection of the first positive photoresist block on the substrate coincides with the orthographic projection of the first light-shielding area on the substrate, and the second positive photoresist block is on the substrate
  • the orthographic projection of is coincident with the orthographic projection of the second shading area on the substrate.
  • the step of etching the metal layer by an etching process to form a metal pattern, the metal pattern including a first source electrode and a first drain electrode include:
  • the positive photoresist pattern and the negative photoresist pattern are removed by a photoresist stripping process to form a metal oxide pattern, and the metal oxide pattern Comprising a second source electrode and a second drain electrode, wherein the first source electrode is located on the second source electrode and the first drain electrode is located on the second drain electrode, including:
  • a photoresist lift-off process is used to remove a part of the negative photoresist pattern directly below the metal oxide layer, so as to remove a part of the metal oxide layer directly above the negative photoresist pattern to form a second Source and second drain.
  • the positive photoresist pattern on the first source and the first drain is removed by a photoresist stripping process, so that the first source
  • the step of leaking the electrode and the first drain includes:
  • the positive photoresist pattern on the first source and the first drain is expanded, softened, and dissolved by the photoresist stripper, so as to remove the positive photoresist pattern on the first source and the first drain.
  • the positive photoresist pattern on the electrode allows the first source electrode and the first drain electrode to leak out.
  • the negative photoresist pattern located directly under a part of the metal oxide layer is removed by using a photoresist lift-off process to remove the negative photoresist pattern directly above the negative photoresist pattern.
  • the step of removing part of the metal oxide layer to form a second source electrode and a second drain electrode includes:
  • a photoresist stripper is used to expand, soften and dissolve the negative photoresist pattern directly under the part of the metal oxide layer, thereby removing the negative photoresist pattern directly under the part of the metal oxide layer , To remove part of the metal oxide layer directly above the negative photoresist pattern to form a second source electrode and a second drain electrode.
  • the metal oxide layer is composed of a transparent conductive thin film material, and the transparent conductive thin film material includes indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide.
  • the thickness of the metal oxide layer is 20 nanometers to 60 nanometers.
  • the application also provides a thin film transistor, including:
  • a gate pattern, the gate pattern is disposed on the substrate;
  • a gate insulating layer, the gate insulating layer is disposed on the glass substrate and completely covers the metal gate;
  • a conductive channel pattern, the conductive channel pattern is disposed on the gate insulating layer;
  • a first source electrode and a second source electrode the first source electrode is arranged on the gate insulating layer and connected to one side of the conductive channel pattern, and the second source electrode is arranged on the first Source
  • a first drain and a second drain the first drain is disposed on the gate insulating layer and connected to the other side of the conductive channel pattern, and the second drain is disposed on the first drain.
  • the metal oxide layer pattern is formed by a photoresist stripping process, which does not cause the problem of bottom cracks, and when the metal layer is etched, the indium gallium zinc oxide back
  • the channel layer is protected by a negative photoresist, so it can also prevent the etching solution from damage to the indium gallium zinc oxide back channel layer, so that no bottom cracks will occur under the premise of using a transparent conductive film as the diffusion barrier material And damage the indium gallium zinc oxide back channel layer and other problems, improve the yield and stability of the product.
  • FIG. 1 is a schematic flowchart of a method for manufacturing a thin film transistor provided by an embodiment of the application
  • FIG. 2 is a schematic diagram of the first sub-process of the method for manufacturing a thin film transistor provided by an embodiment of the application;
  • FIG. 3 is a schematic diagram of a second sub-process of the method for manufacturing a thin film transistor according to an embodiment of the application;
  • FIG. 4 is a schematic diagram of the third sub-process of the method for manufacturing a thin film transistor provided by an embodiment of the application;
  • FIG. 5 is a schematic diagram of another process of a method for manufacturing a thin film transistor provided by an embodiment of the application.
  • FIG. 6 is a schematic diagram of the structure when the indium gallium zinc oxide channel layer pattern is formed in an example of the application;
  • FIG. 7 is a schematic diagram of the structure when the first source electrode pattern and the first drain electrode pattern are formed in an example of the present application.
  • FIG. 8 is a schematic diagram of the structure when the second source electrode pattern and the second drain electrode pattern are formed in an example of the present application;
  • FIG. 9 is a schematic diagram of the structure of a thin film transistor provided by an embodiment of the application.
  • FIG. 1 is a schematic flowchart of a method for manufacturing a thin film transistor provided by an embodiment of the application.
  • the method for preparing a conductive channel material provided by an embodiment of the present application includes the following steps: 101, sequentially forming a gate pattern, a gate insulating layer, and a conductive channel pattern on a substrate; 102.
  • a negative photoresist layer is deposited on the gate insulating layer and the conductive channel pattern, and the negative photoresist pattern is formed through an exposure and development process; 103.
  • the conductive channel pattern, and the A metal oxide layer, a metal layer, and a positive photoresist layer are sequentially deposited on the negative photoresist pattern, and a positive photoresist pattern is formed through an exposure and development process; 104.
  • the metal layer is etched through an etching process to Forming a metal pattern, the metal pattern including a first source electrode and a first drain electrode; 105, removing the positive photoresist pattern and the negative photoresist pattern by a photoresist lift-off process to form a metal oxide pattern,
  • the metal oxide pattern includes a second source electrode and a second drain electrode, wherein the first source electrode is located on the second source electrode, and the first drain electrode is located on the second drain electrode.
  • the current traditional process is to form patterns through exposure, development, and etching processes, and the traditional diffusion barrier layer is made of traditional molybdenum, titanium-molybdenum alloy and other metal materials as the material of the diffusion barrier layer, so it is adopted When the pattern is formed by exposure, development and etching processes, there will be no bottom cracks and damage to the back channel layer. Now, indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide are used.
  • the transparent conductive film is used as the material of the diffusion barrier, and the transparent conductive film such as indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide is used as the material of the diffusion barrier, and the traditional molybdenum, titanium-molybdenum alloy and other metal materials are used. Compared with the material of the diffusion barrier layer, the penetration rate and aperture ratio of the display device can be improved. Therefore, if the traditional process is used to form the pattern, the bottom crack and the back channel layer will cause the problem of damage. Therefore, this application passes The photoresist stripping process is used to form the pattern of the diffusion barrier layer without the problem of bottom cracks.
  • the back channel layer has a negative photoresist protection, so it can also block the etching liquid from the back channel layer. Therefore, under the premise that the transparent conductive film is used as the diffusion barrier material, there will be no bottom cracks and damage to the indium gallium zinc oxide back channel layer, and the yield and stability of the product can be improved.
  • the negative photoresist pattern and the positive photoresist pattern are formed by the same photomask, which will not only reduce the cost; and the formed negative photoresist pattern and the positive photoresist pattern will be Complementary, this is because after exposure and development, the negative photoresist will leave a place that overlaps with the positive projection of the light-transmitting area of the photomask on the substrate, forming a negative photoresist pattern, while the positive photoresist After the photoresist is exposed and developed, a place that overlaps with the orthographic projection of the light-shielding area of the photomask on the substrate is left to form a positive photoresist pattern.
  • FIG. 2 is a schematic diagram of the first sub-process of the method for preparing a conductive channel material provided by an embodiment of the application.
  • step 102 specifically includes: 1021
  • a negative photoresist layer is deposited on the gate insulating layer and the conductive channel pattern; 1022, the negative photoresist layer is exposed and developed using the photomask as a mask to form a negative photoresist Pattern, the orthographic projection of the negative photoresist pattern on the substrate coincides with the orthographic projection of the light-transmitting area on the substrate.
  • the optimal choice for the thickness of the negative photoresist layer is to set at 1 ⁇ m to 5 ⁇ m, but it can also be set to other thicknesses, which is not specifically limited here.
  • the negative photoresist layer is formed by a slit-type photoresist coating process, because the slit-type photoresist coating process has better coating uniformity.
  • the negative photoresist layer because of its own characteristics, it will remove the overlap with the orthographic projection of the shading area of the mask on the substrate, leaving behind the light transmission of the mask.
  • the area is where the orthographic projection on the substrate overlaps, so the formed negative photoresist pattern will overlap with the orthographic projection of the light-transmitting area on the substrate.
  • FIG. 3 is a schematic diagram of a second sub-process of a method for preparing a conductive channel material provided by an embodiment of the application.
  • step 103 specifically includes: 1031 sequentially depositing a metal oxide layer, a metal layer, and a positive photoresist on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern.
  • Photoresist layer; 1032 using the photomask as a mask to expose and develop the positive photoresist layer to form a positive photoresist pattern, the positive photoresist pattern comprising a first positive photoresist block and The second positive photoresist block, the orthographic projection of the first positive photoresist block on the substrate coincides with the orthographic projection of the first light shielding area on the substrate, and the second positive photoresist The orthographic projection of the block on the substrate coincides with the orthographic projection of the second shading area on the substrate.
  • the optimal choice for the thickness of the metal layer is to set the thickness between 300 nanometers and 1000 nanometers, but it can also be set to other thicknesses, which are not specifically limited here because copper has a low resistivity.
  • copper is generally the first choice for the metal layer material; in addition, because transparent conductive films such as indium tin oxide, indium zinc oxide and aluminum-doped zinc oxide serve as diffusion barriers instead of traditional molybdenum, titanium-molybdenum alloy Such metal materials can increase the penetration rate and aperture ratio of the display device, so the metal oxide layer is generally composed of transparent conductive film materials.
  • the transparent conductive film materials include indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide.
  • the thickness of the metal oxide layer is optimally set to be between 20 nanometers and 60 nanometers, but it can also be set to other thicknesses, which are not specifically limited here.
  • the positive photoresist layer because of its own characteristics, it will remove the overlap with the orthographic projection of the transparent area of the photomask on the substrate, leaving behind the light shielding of the photomask.
  • the area is where the orthographic projections on the substrate overlap, so in the formed positive photoresist pattern including the first positive photoresist block and the second positive photoresist block, the first positive photoresist block is located at the The orthographic projection on the substrate coincides with the orthographic projection of the first shading area on the substrate, and the orthographic projection of the second positive photoresist block on the substrate and the second shading area are in the The orthographic projections on the substrate coincide.
  • step 104 specifically includes: using the positive photoresist pattern as a protective layer to perform an etching process on the metal layer to remove the part that is not blocked by the positive photoresist pattern.
  • the metal layer a part of the metal layer blocked by the positive photoresist pattern remains, wherein the part of the metal layer blocked by the positive photoresist pattern corresponds to the first source electrode and the first drain electrode.
  • the metal layer is etched to form the first source electrode and the first drain electrode by using the positive photoresist pattern as a protective layer
  • the negative photoresist pattern will affect the back groove.
  • the channel layer is protected, so the etching solution will not cause damage to the back channel layer, and will not affect the yield and stability of the product.
  • FIG. 4 is a schematic diagram of a third sub-process of a method for preparing a conductive channel material provided by an embodiment of the application. 1 and 4, step 105 specifically includes: 1051, using a photoresist stripping process to remove the positive photoresist pattern on the first source and the first drain, so that the The first source and the first drain leak out; 1052, using a photoresist lift-off process to remove the negative photoresist pattern directly under a part of the metal oxide layer, so as to remove the negative photoresist pattern A part of the metal oxide layer directly above is removed to form a second source electrode and a second drain electrode.
  • the method of forming the second source electrode and the second drain electrode on the metal oxide layer is to remove the negative photoresist pattern located directly under a part of the metal oxide layer through a photoresist stripping process. Compared with the traditional exposure, development and etching process, the problem of bottom cracks will not occur, and the yield and stability of the thin film transistor can be improved.
  • step 1051 specifically includes: spraying a photoresist stripping solution on the positive photoresist pattern located on the first source and the first drain;
  • the positive photoresist pattern on the first source and the first drain is expanded, softened, and dissolved, so as to remove the positive photoresist pattern on the first source and the first drain.
  • the positive photoresist pattern allows the first source and the first drain to leak out.
  • step 1052 specifically includes: forming a reverse slope angle on the negative photoresist pattern located directly under part of the metal oxide layer, so that part of the metal oxide layer is climbing.
  • the photoresist stripping liquid is sprayed on the negative photoresist pattern directly below part of the metal oxide layer through the gap; the photoresist stripping liquid is used to make the part of the metal oxide layer positive
  • the lower negative photoresist pattern expands, softens, and dissolves, so as to remove part of the negative photoresist pattern directly under the metal oxide layer, so as to remove the part directly above the negative photoresist pattern.
  • the metal oxide layer is removed to form a second source electrode and a second drain electrode.
  • a reverse slope angle can be formed on the negative photoresist pattern directly below part of the metal oxide layer, so that part of the metal oxide layer is broken when climbing a slope, thereby forming a
  • the photoresist stripper can contact the gap of the negative photoresist pattern, and can also be stacked by two layers of negative photoresist, so as to make part of the metal oxide layer break when climbing, and then form the photoresist stripper. Able to touch the gap of the negative photoresist pattern.
  • FIG. 5 is a schematic diagram of another process of the method for manufacturing a thin film transistor provided by an embodiment of the application.
  • the difference between the preparation method of the conductive channel material shown in FIG. 5 and the preparation method of the conductive channel material shown in FIG. 1 is that the preparation method of the conductive channel material shown in FIG. 5 also includes after step 105 : Step 106, deposit a passivation protection layer on the conductive channel pattern and the first source and first drain; 107, deposit a pixel electrode layer on the passivation protection layer.
  • a passivation protection layer is deposited on the conductive channel pattern and the first source electrode and the first drain electrode, and then the passivation protection layer is etched through an etching process, so that the source and drain electrode layers leak out, Then the pixel electrode layer is deposited, so that the voltage signals of the source and drain electrodes are connected to the pixel electrodes.
  • the metal oxide layer pattern is formed by the photoresist stripping process, which does not cause the problem of bottom cracks, and when the metal layer is etched, the indium gallium zinc oxide back channel layer With negative photoresist protection, it can also prevent the etching solution from damage to the indium gallium zinc oxide back channel layer, so that under the premise of using a transparent conductive film as the diffusion barrier material, bottom cracks and resistance to indium can not be generated.
  • the gallium-zinc oxide back channel layer causes problems such as damage and improves the yield and stability of the product.
  • a metal gate pattern 202, a metal gate insulating layer 203, and an indium gallium zinc oxide channel layer pattern 204 are sequentially formed on the glass substrate 201.
  • the formed structure is shown in FIG. 6, which is The application example is a schematic diagram of the structure when the indium gallium zinc oxide channel layer pattern is formed, and the gate insulating layer 203 and the indium gallium zinc oxide channel layer pattern 204 are coated by a slit-type photoresist coating process
  • a negative photoresist layer is arranged, and the thickness of the negative photoresist layer is 1 ⁇ m to 5 ⁇ m, and the negative photoresist layer is exposed and developed with a photomask as a mask, thereby forming a negative photoresist pattern 205.
  • the indium gallium zinc oxide channel layer pattern 204, and the negative photoresist pattern 205 are sequentially deposited an indium tin oxide film 206, a copper film, and a positive photoresist pattern.
  • the thickness of the indium tin oxide film 206 is 20 to 60 nanometers
  • the thickness of the copper film is 300 to 1000 nanometers
  • the photomask is used as a mask to resist the positive photoresist.
  • the layer undergoes an exposure and development process, and a positive photoresist pattern 207 is formed through the exposure and development process.
  • the positive photoresist pattern 207 includes a first positive photoresist block 208 and a second positive photoresist block 209.
  • the positive photoresist pattern 207 is a protective layer that performs an etching process on the copper film layer to remove the part of the copper film that is not blocked by the positive photoresist pattern 207, and remains blocked by the positive photoresist pattern.
  • a photoresist stripping solution is sprayed on the positive photoresist pattern 207, and the positive photoresist pattern 207 is expanded, softened and dissolved by the photoresist stripping solution, thereby removing the positive photoresist pattern 207 and making the
  • the first source pattern 210 and the first drain pattern 211 leak out, so that a reverse slope angle is formed on the negative photoresist pattern 205, so that part of the indium tin oxide film 206 is broken when climbing, Then, a gap is formed, and the photoresist stripping liquid is sprayed on the negative photoresist pattern 205 through the gap to expand, soften, and dissolve the positive photoresist pattern 205, thereby removing the negative photoresist pattern 205, so that the negative photoresist pattern 205 is removed.
  • FIG. 8 The portion of the indium tin oxide film 206 directly above the negative photoresist pattern 205 is removed to form a second source pattern 212 and a second drain pattern 213.
  • the resulting structure is shown in FIG. 8, which is The application example is a schematic diagram of the structure when the second source pattern and the second drain pattern are formed.
  • FIG. 9 is a schematic structural diagram of a thin film transistor provided by an embodiment of the application.
  • the thin film transistor provided by the embodiment of the present application includes a substrate 301, a gate pattern 302, a gate insulating layer 303, a conductive channel pattern 304, a first source 305, a second source 306, and a first drain. Pole 307, second drain 308.
  • the substrate 301 is provided with the gate pattern 302, the gate insulating layer 303 is provided on the substrate 301 and completely covers the gate pattern 302, and the conductive channel pattern 304 is provided on the substrate 301.
  • the first source 305 is disposed on the gate insulating layer 303 and connected to one side of the conductive channel pattern 304, and the second source 306 is disposed on the first
  • the first drain 307 is disposed on the gate insulating layer 303 and connected to the other side of the conductive channel pattern 304, and the second drain 308 is disposed on the first A drain 307 is on.
  • a passivation protection layer 309 and a pixel electrode layer 310 may also be provided on the surface of the thin film transistor provided in the embodiment of the application.
  • the passivation protection layer 309 is provided on the surface of the thin film transistor provided in the embodiment of the application, and the pixel electrode layer 310 is provided On the passivation protection layer 309, a trapezoidal gap is provided on one side of the passivation protection layer 309, and the pixel electrode is connected to the voltage signal of the source and drain of the thin film transistor provided in the embodiment of the present application through the gap.
  • the thin film transistor prepared by the above thin film transistor manufacturing method because the metal oxide layer pattern is formed by the photoresist stripping process, will not cause the problem of bottom cracks, and when the metal layer is etched, the indium gallium
  • the zinc oxide back channel layer has negative photoresist protection, so it can also prevent the etching solution from damage to the indium gallium zinc oxide back channel layer, so that it can be prepared on the premise that the transparent conductive film is used as the diffusion barrier material

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Abstract

In a method for manufacturing a thin film transistor, and a thin film transistor provided by the present application, the method comprises: forming a gate pattern, a gate insulation layer, and a conductive channel pattern on a substrate; depositing a negative photoresist layer on the conductive channel pattern, and forming a negative photoresist pattern; depositing a metal oxide layer, a metal layer, and a positive photoresist layer on the negative photoresist pattern, and forming a positive photoresist pattern and a metal pattern; and removing the positive photoresist pattern and the negative photoresist pattern to form a metal oxide pattern.

Description

薄膜晶体管的制备方法及薄膜晶体管Method for preparing thin film transistor and thin film transistor 技术领域Technical field
本申请涉及显示领域，具体涉及一种薄膜晶体管的制备方法及薄膜晶体管。The application relates to the field of display, in particular to a method for preparing a thin film transistor and a thin film transistor.
背景技术Background technique
目前，液晶显示装置和有机发光二极管显示装置都在朝着大尺寸和高分辨率的方向发展，其中，以铟镓锌氧化物为代表的金属氧化物材料因具备较高的迁移率，已经成为显示领域研发的重点，而铜具因有电阻率低和成本低廉的优势，所以一般都作为电极材料的首选，但铜易扩散到铟镓锌氧化物半导体层，进而会影响器件的电学性能，因此需要选择合适的材料来阻挡铜扩散。At present, both liquid crystal display devices and organic light-emitting diode display devices are developing in the direction of large size and high resolution. Among them, metal oxide materials represented by indium gallium zinc oxide have high mobility and have become The focus of research and development in the display field, and copper has the advantages of low resistivity and low cost, so it is generally used as the first choice of electrode material, but copper is easy to diffuse into the indium gallium zinc oxide semiconductor layer, which will affect the electrical performance of the device. Therefore, it is necessary to select a suitable material to block the diffusion of copper.
近年来，铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌等透明导电薄膜作为扩散阻挡层取代传统钼，钛钼合金等金属材料可提升显示装置的穿透率及开口率，但是采用传统的制作工艺在对由铟镓锌氧化物、铟锌氧化物和铝掺杂的氧化锌等透明导电薄膜组成的扩散阻挡层进行刻蚀时，容易产生底部裂纹和对铟镓锌氧化物背沟道层造成损伤等问题，从而影响产品良率以及器件的稳定性。In recent years, transparent conductive films such as indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide have been used as diffusion barriers to replace traditional molybdenum. Metal materials such as titanium-molybdenum alloy can improve the transmittance and aperture ratio of display devices. When the traditional manufacturing process is used to etch the diffusion barrier layer composed of transparent conductive films such as indium gallium zinc oxide, indium zinc oxide, and aluminum-doped zinc oxide, it is easy to produce bottom cracks and damage the indium gallium zinc oxide. The back channel layer causes problems such as damage, thereby affecting product yield and device stability.
因此，如何在保证采用透明导电薄膜作为扩散阻挡层材料的前提下不会产生底部裂纹和对铟镓锌氧化物背沟道层造成损伤等问题是全世界面板厂家正在努力攻克的难关。Therefore, how to ensure that the transparent conductive film is used as the diffusion barrier layer material will not produce bottom cracks and damage the indium gallium zinc oxide back channel layer and other issues are difficulties that panel manufacturers all over the world are trying to overcome.
技术问题technical problem
本申请提供一种导电沟道材料的制备方法及薄膜晶体管，可以解决现有的在保证采用透明导电薄膜作为扩散阻挡层材料前提下不会产生底部裂纹和对铟镓锌氧化物背沟道层造成损伤等问题的技术问题。The present application provides a method for preparing a conductive channel material and a thin film transistor, which can solve the problem that the existing transparent conductive film is used as the diffusion barrier layer material to avoid bottom cracks and damage to the indium gallium zinc oxide back channel layer. Technical problems that cause damage and other problems.
技术解决方案Technical solutions
本申请提供一种薄膜晶体管的制备方法，所述制备方法包括：The present application provides a method for manufacturing a thin film transistor. The manufacturing method includes:
在基板上依次形成栅极图案、栅极绝缘层、导电沟道图案；Sequentially forming a gate pattern, a gate insulating layer, and a conductive channel pattern on the substrate;
在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案；Depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern, and forming a negative photoresist pattern through an exposure and development process;
在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案；A metal oxide layer, a metal layer, and a positive photoresist layer are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern, and a positive photoresist pattern is formed through an exposure and development process ；
以所述正性光阻图案为保护层对所述金属层进行刻蚀工艺，以去除未被所述正性光阻图案遮挡的部分所述金属层，保留被所述正性光阻图案遮挡的部分所述金属层，其中，被所述正性光阻图案遮挡的部分所述金属层对应第一源极和第一漏极；Perform an etching process on the metal layer using the positive photoresist pattern as a protective layer to remove the part of the metal layer that is not blocked by the positive photoresist pattern, and remain blocked by the positive photoresist pattern Part of the metal layer in, wherein the part of the metal layer that is blocked by the positive photoresist pattern corresponds to a first source electrode and a first drain electrode;
采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出，采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极，其中，所述第一源极位于所述第二源极上，所述第一漏极位于所述第二漏极上。A photoresist stripping process is used to remove the positive photoresist pattern on the first source and the first drain, so that the first source and the first drain leak out, and a photoresist is used The lift-off process removes a portion of the negative photoresist pattern directly under the metal oxide layer, so as to remove a portion of the metal oxide layer directly above the negative photoresist pattern to form a second source electrode and The second drain, wherein the first source is located on the second source, and the first drain is located on the second drain.
在本申请所提供的薄膜晶体管的制备方法中，可采用同一光罩形成所述负性光阻图案和所述正性光阻图案：In the method for manufacturing the thin film transistor provided in the present application, the negative photoresist pattern and the positive photoresist pattern can be formed by using the same photomask:
其中，所述光罩包括透光区、位于所述透光区一侧的第一遮光区以及位于所述透光区另一侧的第二遮光区，所述第一遮光区在所述基板上的正投影与所述第一源极以及所述第二源极在所述基板上的正投影重合，所述第二遮光区在所述基板上的正投影与所述第一漏极以及所述第二漏极在所述基板上的正投影重合。Wherein, the photomask includes a light-transmitting area, a first light-shielding area located on one side of the light-transmitting area, and a second light-shielding area located on the other side of the light-transmitting area, and the first light-shielding area is on the substrate The orthographic projection on the substrate coincides with the orthographic projection of the first source electrode and the second source electrode on the substrate, and the orthographic projection of the second light-shielding area on the substrate coincides with the orthographic projection of the first drain electrode and the The orthographic projections of the second drain electrode on the substrate coincide.
在本申请所提供的薄膜晶体管的制备方法中，所述在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案的步骤，包括：In the method for manufacturing a thin film transistor provided by the present application, the step of depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern, and forming a negative photoresist pattern through an exposure and development process ,include:
在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层；Depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern;
以所述光罩为掩膜对所述负性光阻层进行曝光显影工艺，形成负性光阻图案，所述负性光阻图案在所述基板上的正投影与所述透光区在所述基板上的正投影重合。The negative photoresist layer is exposed and developed by using the photomask as a mask to form a negative photoresist pattern. The positive projection of the negative photoresist pattern on the substrate is in line with the light-transmitting area. The orthographic projections on the substrate coincide.
在本申请所提供的薄膜晶体管的制备方法中，所述在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案的步骤，包括：In the manufacturing method of the thin film transistor provided by the present application, the metal oxide layer, the metal layer, and the positive photoresist pattern are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern. The step of forming a photoresist layer and forming a positive photoresist pattern through an exposure and development process includes:
在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层；Depositing a metal oxide layer, a metal layer, and a positive photoresist layer on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern in sequence;
以所述光罩为掩膜对所述正性光阻层进行曝光显影工艺，形成正性光阻图案，所述正性光阻图案包括第一正性光阻块和第二正性光阻块，所述第一正性光阻块在所述基板上的正投影与所述第一遮光区在所述基板上的正投影重合，所述第二正性光阻块在所述基板上的正投影与所述第二遮光区在所述基板上的正投影重合。The positive photoresist layer is exposed and developed using the photomask as a mask to form a positive photoresist pattern. The positive photoresist pattern includes a first positive photoresist block and a second positive photoresist. Block, the orthographic projection of the first positive photoresist block on the substrate coincides with the orthographic projection of the first light-shielding area on the substrate, and the second positive photoresist block is on the substrate The orthographic projection of is coincident with the orthographic projection of the second shading area on the substrate.
在本申请所提供的薄膜晶体管的制备方法中，采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出的步骤，包括：In the method for manufacturing the thin film transistor provided by the present application, the positive photoresist pattern on the first source and the first drain is removed by a photoresist stripping process, so that the first source The step of leaking the electrode and the first drain includes:
在位于所述第一源极以及所述第一漏极上的所述正性光阻图案上喷洒光阻剥离液；Spraying a photoresist stripping solution on the positive photoresist pattern on the first source electrode and the first drain electrode;
通过光阻剥离液使位于所述第一源极以及所述第一漏极上的所述正性光阻图案膨胀、软化以及溶解，从而去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出。The positive photoresist pattern on the first source and the first drain is expanded, softened, and dissolved by the photoresist stripper, so as to remove the positive photoresist pattern on the first source and the first drain. The positive photoresist pattern on the electrode allows the first source electrode and the first drain electrode to leak out.
在本申请所提供的薄膜晶体管的制备方法中，采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极的步骤，包括：In the manufacturing method of the thin film transistor provided by the present application, the negative photoresist pattern located directly under a part of the metal oxide layer is removed by using a photoresist lift-off process to remove the negative photoresist pattern directly above the negative photoresist pattern. The step of removing part of the metal oxide layer to form a second source electrode and a second drain electrode includes:
在位于部分所述金属氧化物层正下方的所述负性光阻图案上形成反向坡度角，以使部分金属氧化物层在爬坡时断裂，进而形成缺口；Forming a reverse slope angle on the negative photoresist pattern directly under part of the metal oxide layer, so that part of the metal oxide layer is broken when climbing a slope, thereby forming a gap;
经缺口向位于部分所述金属氧化物层正下方的所述负性光阻图案上喷洒光阻剥离液；Spraying a photoresist stripping liquid onto the negative photoresist pattern directly under a part of the metal oxide layer through the notch;
通过光阻剥离液使位于部分所述金属氧化物层正下方的所述负性光阻图案膨胀、软化以及溶解，从而去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极。A photoresist stripper is used to expand, soften and dissolve the negative photoresist pattern directly under the part of the metal oxide layer, thereby removing the negative photoresist pattern directly under the part of the metal oxide layer , To remove part of the metal oxide layer directly above the negative photoresist pattern to form a second source electrode and a second drain electrode.
在本申请所提供的薄膜晶体管的制备方法中，所述金属氧化物层采用透明导电薄膜材料组成，所述透明导电薄膜材料包括铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌中的一种或组合，所述金属氧化物层的厚度为20纳米~60纳米。In the manufacturing method of the thin film transistor provided by this application, the metal oxide layer is composed of a transparent conductive thin film material, and the transparent conductive thin film material includes indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide. One or a combination of, the thickness of the metal oxide layer is 20 nanometers to 60 nanometers.
本申请提供还一种薄膜晶体管的制备方法，所述制备方法包括：The present application provides a method for manufacturing a thin film transistor. The manufacturing method includes:
在基板上依次形成栅极图案、栅极绝缘层、导电沟道图案；Sequentially forming a gate pattern, a gate insulating layer, and a conductive channel pattern on the substrate;
在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案；Depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern, and forming a negative photoresist pattern through an exposure and development process;
在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案；A metal oxide layer, a metal layer, and a positive photoresist layer are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern, and a positive photoresist pattern is formed through an exposure and development process ；
通过刻蚀工艺对所述金属层进行刻蚀，以形成金属图案，所述金属图案包括第一源极和第一漏极；Etching the metal layer by an etching process to form a metal pattern, the metal pattern including a first source electrode and a first drain electrode;
采用光阻剥离工艺去除所述正性光阻图案以及所述负性光阻图案，以形成金属氧化物图案，所述金属氧化物图案包括第二源极和第二漏极，其中，所述第一源极位于所述第二源极上，所述第一漏极位于所述第二漏极上。The positive photoresist pattern and the negative photoresist pattern are removed by a photoresist lift-off process to form a metal oxide pattern. The metal oxide pattern includes a second source electrode and a second drain electrode, wherein the The first source is located on the second source, and the first drain is located on the second drain.
在本申请所提供的薄膜晶体管的制备方法中，可采用同一光罩形成所述负性光阻图案和所述正性光阻图案：In the method for manufacturing the thin film transistor provided in the present application, the negative photoresist pattern and the positive photoresist pattern can be formed by using the same photomask:
其中，所述光罩包括透光区、位于所述透光区一侧的第一遮光区以及位于所述透光区另一侧的第二遮光区，所述第一遮光区在所述基板上的正投影与所述第一源极以及所述第二源极在所述基板上的正投影重合，所述第二遮光区在所述基板上的正投影与所述第一漏极以及所述第二漏极在所述基板上的正投影重合。Wherein, the photomask includes a light-transmitting area, a first light-shielding area located on one side of the light-transmitting area, and a second light-shielding area located on the other side of the light-transmitting area, and the first light-shielding area is on the substrate The orthographic projection on the substrate coincides with the orthographic projection of the first source electrode and the second source electrode on the substrate, and the orthographic projection of the second light-shielding area on the substrate coincides with the orthographic projection of the first drain electrode and the The orthographic projections of the second drain electrode on the substrate coincide.
在本申请所提供的薄膜晶体管的制备方法中，所述在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案的步骤，包括：In the method for manufacturing a thin film transistor provided by the present application, the step of depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern, and forming a negative photoresist pattern through an exposure and development process ,include:
在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层；Depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern;
以所述光罩为掩膜对所述负性光阻层进行曝光显影工艺，形成负性光阻图案，所述负性光阻图案在所述基板上的正投影与所述透光区在所述基板上的正投影重合。The negative photoresist layer is exposed and developed by using the photomask as a mask to form a negative photoresist pattern. The positive projection of the negative photoresist pattern on the substrate is in line with the light-transmitting area. The orthographic projections on the substrate coincide.
在本申请所提供的薄膜晶体管的制备方法中，所述在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案的步骤，包括：In the manufacturing method of the thin film transistor provided by the present application, the metal oxide layer, the metal layer, and the positive photoresist pattern are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern. The step of forming a photoresist layer and forming a positive photoresist pattern through an exposure and development process includes:
在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层；Depositing a metal oxide layer, a metal layer, and a positive photoresist layer on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern in sequence;
以所述光罩为掩膜对所述正性光阻层进行曝光显影工艺，形成正性光阻图案，所述正性光阻图案包括第一正性光阻块和第二正性光阻块，所述第一正性光阻块在所述基板上的正投影与所述第一遮光区在所述基板上的正投影重合，所述第二正性光阻块在所述基板上的正投影与所述第二遮光区在所述基板上的正投影重合。The positive photoresist layer is exposed and developed using the photomask as a mask to form a positive photoresist pattern. The positive photoresist pattern includes a first positive photoresist block and a second positive photoresist. Block, the orthographic projection of the first positive photoresist block on the substrate coincides with the orthographic projection of the first light-shielding area on the substrate, and the second positive photoresist block is on the substrate The orthographic projection of is coincident with the orthographic projection of the second shading area on the substrate.
在本申请所提供的薄膜晶体管的制备方法中，所述通过刻蚀工艺对所述金属层进行刻蚀，以形成金属图案，所述金属图案包括第一源极和第一漏极的步骤，包括：In the method for manufacturing a thin film transistor provided in the present application, the step of etching the metal layer by an etching process to form a metal pattern, the metal pattern including a first source electrode and a first drain electrode, include:
以所述正性光阻图案为保护层对所述金属层进行刻蚀工艺，以去除未被所述正性光阻图案遮挡的部分所述金属层，保留被所述正性光阻图案遮挡的部分所述金属层，其中，被所述正性光阻图案遮挡的部分所述金属层对应第一源极和第一漏极。Perform an etching process on the metal layer using the positive photoresist pattern as a protective layer to remove the part of the metal layer that is not blocked by the positive photoresist pattern, and remain blocked by the positive photoresist pattern Part of the metal layer, wherein the part of the metal layer that is blocked by the positive photoresist pattern corresponds to the first source electrode and the first drain electrode.
在本申请所提供的薄膜晶体管的制备方法中，所述采用光阻剥离工艺去除所述正性光阻图案以及所述负性光阻图案，以形成金属氧化物图案，所述金属氧化物图案包括第二源极和第二漏极，其中，所述第一源极位于所述第二源极上，所述第一漏极位于所述第二漏极上的步骤，包括：In the method for manufacturing a thin film transistor provided by the present application, the positive photoresist pattern and the negative photoresist pattern are removed by a photoresist stripping process to form a metal oxide pattern, and the metal oxide pattern Comprising a second source electrode and a second drain electrode, wherein the first source electrode is located on the second source electrode and the first drain electrode is located on the second drain electrode, including:
采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出；Removing the positive photoresist pattern on the first source electrode and the first drain electrode by a photoresist stripping process, so that the first source electrode and the first drain electrode leak out;
采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极。A photoresist lift-off process is used to remove a part of the negative photoresist pattern directly below the metal oxide layer, so as to remove a part of the metal oxide layer directly above the negative photoresist pattern to form a second Source and second drain.
在本申请所提供的薄膜晶体管的制备方法中，采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出的步骤，包括：In the method for manufacturing the thin film transistor provided by the present application, the positive photoresist pattern on the first source and the first drain is removed by a photoresist stripping process, so that the first source The step of leaking the electrode and the first drain includes:
在位于所述第一源极以及所述第一漏极上的所述正性光阻图案上喷洒光阻剥离液；Spraying a photoresist stripping solution on the positive photoresist pattern on the first source electrode and the first drain electrode;
通过光阻剥离液使位于所述第一源极以及所述第一漏极上的所述正性光阻图案膨胀、软化以及溶解，从而去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出。The positive photoresist pattern on the first source and the first drain is expanded, softened, and dissolved by the photoresist stripper, so as to remove the positive photoresist pattern on the first source and the first drain. The positive photoresist pattern on the electrode allows the first source electrode and the first drain electrode to leak out.
在本申请所提供的薄膜晶体管的制备方法中，采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极的步骤，包括：In the manufacturing method of the thin film transistor provided by the present application, the negative photoresist pattern located directly under a part of the metal oxide layer is removed by using a photoresist lift-off process to remove the negative photoresist pattern directly above the negative photoresist pattern. The step of removing part of the metal oxide layer to form a second source electrode and a second drain electrode includes:
在位于部分所述金属氧化物层正下方的所述负性光阻图案上形成反向坡度角，以使部分金属氧化物层在爬坡时断裂，进而形成缺口；Forming a reverse slope angle on the negative photoresist pattern directly under part of the metal oxide layer, so that part of the metal oxide layer is broken when climbing a slope, thereby forming a gap;
经缺口向位于部分所述金属氧化物层正下方的所述负性光阻图案上喷洒光阻剥离液；Spraying a photoresist stripping liquid onto the negative photoresist pattern directly under a part of the metal oxide layer through the notch;
通过光阻剥离液使位于部分所述金属氧化物层正下方的所述负性光阻图案膨胀、软化以及溶解，从而去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极。A photoresist stripper is used to expand, soften and dissolve the negative photoresist pattern directly under the part of the metal oxide layer, thereby removing the negative photoresist pattern directly under the part of the metal oxide layer , To remove part of the metal oxide layer directly above the negative photoresist pattern to form a second source electrode and a second drain electrode.
在本申请所提供的薄膜晶体管的制备方法中，所述金属氧化物层采用透明导电薄膜材料组成，所述透明导电薄膜材料包括铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌中的一种或组合，所述金属氧化物层的厚度为20纳米~60纳米。In the manufacturing method of the thin film transistor provided by this application, the metal oxide layer is composed of a transparent conductive thin film material, and the transparent conductive thin film material includes indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide. One or a combination of, the thickness of the metal oxide layer is 20 nanometers to 60 nanometers.
本申请还提供一种薄膜晶体管，包括：The application also provides a thin film transistor, including:
基板；Substrate
栅极图案，所述栅极图案设置于所述基板上；A gate pattern, the gate pattern is disposed on the substrate;
栅极绝缘层，所述栅极绝缘层设置于所述玻璃衬底上，且把所述金属栅极完全覆盖起来；A gate insulating layer, the gate insulating layer is disposed on the glass substrate and completely covers the metal gate;
导电沟道图案，所述导电沟道图案设置于所述栅极绝缘层上；A conductive channel pattern, the conductive channel pattern is disposed on the gate insulating layer;
第一源极、第二源极，所述第一源极设置在所述栅极绝缘层上并与所述导电沟道图案的一侧连接，所述第二源极设置在所述第一源极上；A first source electrode and a second source electrode, the first source electrode is arranged on the gate insulating layer and connected to one side of the conductive channel pattern, and the second source electrode is arranged on the first Source
第一漏极、第二漏极，所述第一漏极设置在所述栅极绝缘层上并与所述导电沟道图案的另一侧连接，所述第二漏极设置在所述第一漏极上。A first drain and a second drain, the first drain is disposed on the gate insulating layer and connected to the other side of the conductive channel pattern, and the second drain is disposed on the first drain. One drain on.
有益效果Beneficial effect
在本申请提供的薄膜晶体管的制备方法及薄膜晶体管，金属氧化物层图案是由光阻剥离工艺形成的，不会产生底部裂纹的问题，而在金属层刻蚀时，铟镓锌氧化物背沟道层有负性光阻保护，所以也可阻挡刻蚀液对铟镓锌氧化物背沟道层的损伤，从而可以在采用透明导电薄膜作为扩散阻挡层材料的前提下不会产生底部裂纹和对铟镓锌氧化物背沟道层造成损伤等问题，提高产品的良率和稳定性。In the thin film transistor manufacturing method and thin film transistor provided in the present application, the metal oxide layer pattern is formed by a photoresist stripping process, which does not cause the problem of bottom cracks, and when the metal layer is etched, the indium gallium zinc oxide back The channel layer is protected by a negative photoresist, so it can also prevent the etching solution from damage to the indium gallium zinc oxide back channel layer, so that no bottom cracks will occur under the premise of using a transparent conductive film as the diffusion barrier material And damage the indium gallium zinc oxide back channel layer and other problems, improve the yield and stability of the product.
附图说明Description of the drawings
为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to explain the technical solutions in this application more clearly, the following will briefly introduce the drawings needed in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the application. For those skilled in the art, without creative work, other drawings can be obtained based on these drawings.
图1为本申请实施例提供的薄膜晶体管的制备方法的流程示意图；FIG. 1 is a schematic flowchart of a method for manufacturing a thin film transistor provided by an embodiment of the application;
图2为本申请实施例提供的薄膜晶体管的制备方法的第一子流程示意图；2 is a schematic diagram of the first sub-process of the method for manufacturing a thin film transistor provided by an embodiment of the application;
图3为本申请实施例提供的薄膜晶体管的制备方法的第二子流程示意图；FIG. 3 is a schematic diagram of a second sub-process of the method for manufacturing a thin film transistor according to an embodiment of the application;
图4为本申请实施例提供的薄膜晶体管的制备方法的第三子流程示意图；FIG. 4 is a schematic diagram of the third sub-process of the method for manufacturing a thin film transistor provided by an embodiment of the application;
图5为本申请实施例提供的薄膜晶体管的制备方法的另一流程示意图；FIG. 5 is a schematic diagram of another process of a method for manufacturing a thin film transistor provided by an embodiment of the application;
图6为本申请实例形成铟镓锌氧化物沟道层图案时的结构示意图；6 is a schematic diagram of the structure when the indium gallium zinc oxide channel layer pattern is formed in an example of the application;
图7为本申请实例形成第一源极图案和第一漏极图案时的结构示意图；FIG. 7 is a schematic diagram of the structure when the first source electrode pattern and the first drain electrode pattern are formed in an example of the present application;
图8为本申请实例形成第二源极图案和第二漏极图案时的结构示意图；8 is a schematic diagram of the structure when the second source electrode pattern and the second drain electrode pattern are formed in an example of the present application;
图9为本申请实施例提供的薄膜晶体管的结构示意图。FIG. 9 is a schematic diagram of the structure of a thin film transistor provided by an embodiment of the application.
本发明的实施方式Embodiments of the present invention
下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。The technical solutions in the present application will be described clearly and completely in conjunction with the drawings in the embodiments of the present application. Obviously, the described implementation manners are only a part of the implementation manners of the present application, rather than all of the implementation manners. Based on the implementation in this application, all other implementations obtained by those skilled in the art without creative work fall within the protection scope of this application.
请参阅图1，图1为本申请实施例提供的薄膜晶体管的制备方法的流程示意图。如图1所示，本申请实施例提供的导电沟道材料的制备方法，包括以下步骤：101、在基板上依次形成栅极图案、栅极绝缘层、导电沟道图案；102、在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案；103、在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案；104、通过刻蚀工艺对所述金属层进行刻蚀，以形成金属图案，所述金属图案包括第一源极和第一漏极；105、采用光阻剥离工艺去除所述正性光阻图案以及所述负性光阻图案，以形成金属氧化物图案，所述金属氧化物图案包括第二源极和第二漏极，其中，所述第一源极位于所述第二源极上，所述第一漏极位于所述第二漏极上。Please refer to FIG. 1. FIG. 1 is a schematic flowchart of a method for manufacturing a thin film transistor provided by an embodiment of the application. As shown in FIG. 1, the method for preparing a conductive channel material provided by an embodiment of the present application includes the following steps: 101, sequentially forming a gate pattern, a gate insulating layer, and a conductive channel pattern on a substrate; 102. A negative photoresist layer is deposited on the gate insulating layer and the conductive channel pattern, and the negative photoresist pattern is formed through an exposure and development process; 103. On the gate insulating layer, the conductive channel pattern, and the A metal oxide layer, a metal layer, and a positive photoresist layer are sequentially deposited on the negative photoresist pattern, and a positive photoresist pattern is formed through an exposure and development process; 104. The metal layer is etched through an etching process to Forming a metal pattern, the metal pattern including a first source electrode and a first drain electrode; 105, removing the positive photoresist pattern and the negative photoresist pattern by a photoresist lift-off process to form a metal oxide pattern, The metal oxide pattern includes a second source electrode and a second drain electrode, wherein the first source electrode is located on the second source electrode, and the first drain electrode is located on the second drain electrode.
可以理解的，目前传统工艺是通过曝光、显影以及刻蚀工艺来形成图案的，而传统的扩散阻挡层都是由传统钼，钛钼合金等金属材料来作为扩散阻挡层的材料，所以在通过曝光、显影以及刻蚀工艺来形成图案时，并不会产生底部裂纹和背沟道层造成损伤的问题，而现在都是采用铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌等透明导电薄膜作为扩散阻挡层的材料，而采用铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌等透明导电薄膜作为扩散阻挡层的材料与采用传统钼，钛钼合金等金属材料来作为扩散阻挡层的材料相比，可以提升显示装置的穿透率以及开口率，所以现在如果还传统工艺来形成图案，就会产生底部裂纹和背沟道层造成损伤的问题，因此本申请通过光阻剥离工艺来形成扩散阻挡层图案，不会产生底部裂纹的问题，而在金属层刻蚀时，背沟道层有负性光阻保护，所以也可阻挡刻蚀液对背沟道层的损伤，从而可以在采用透明导电薄膜作为扩散阻挡层材料的前提下不会产生底部裂纹和对铟镓锌氧化物背沟道层造成损伤等问题，提高产品的良率和稳定性。It is understandable that the current traditional process is to form patterns through exposure, development, and etching processes, and the traditional diffusion barrier layer is made of traditional molybdenum, titanium-molybdenum alloy and other metal materials as the material of the diffusion barrier layer, so it is adopted When the pattern is formed by exposure, development and etching processes, there will be no bottom cracks and damage to the back channel layer. Now, indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide are used. The transparent conductive film is used as the material of the diffusion barrier, and the transparent conductive film such as indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide is used as the material of the diffusion barrier, and the traditional molybdenum, titanium-molybdenum alloy and other metal materials are used. Compared with the material of the diffusion barrier layer, the penetration rate and aperture ratio of the display device can be improved. Therefore, if the traditional process is used to form the pattern, the bottom crack and the back channel layer will cause the problem of damage. Therefore, this application passes The photoresist stripping process is used to form the pattern of the diffusion barrier layer without the problem of bottom cracks. When the metal layer is etched, the back channel layer has a negative photoresist protection, so it can also block the etching liquid from the back channel layer. Therefore, under the premise that the transparent conductive film is used as the diffusion barrier material, there will be no bottom cracks and damage to the indium gallium zinc oxide back channel layer, and the yield and stability of the product can be improved.
其中，所述负性光阻图案和所述正性光阻图案是通过同一光罩形成的，这样不仅会减少成本；而且形成的所述负性光阻图案和所述正性光阻图案会形成互补，这是因为负性光阻在进行曝光显影后，会留下与所述光罩透光区在所述基板上的正投影重合的地方，形成负性光阻图案，而正性光阻在进行曝光显影后，会留下与所述光罩遮光区在所述基板上的正投影重合的地方，形成正性光阻图案。Wherein, the negative photoresist pattern and the positive photoresist pattern are formed by the same photomask, which will not only reduce the cost; and the formed negative photoresist pattern and the positive photoresist pattern will be Complementary, this is because after exposure and development, the negative photoresist will leave a place that overlaps with the positive projection of the light-transmitting area of the photomask on the substrate, forming a negative photoresist pattern, while the positive photoresist After the photoresist is exposed and developed, a place that overlaps with the orthographic projection of the light-shielding area of the photomask on the substrate is left to form a positive photoresist pattern.
具体地，请参阅图1、图2，图2为本申请实施例提供的导电沟道材料的制备方法的第一子流程示意图。结合图1、图2所示，步骤102具体包括：1021、Specifically, please refer to FIG. 1 and FIG. 2. FIG. 2 is a schematic diagram of the first sub-process of the method for preparing a conductive channel material provided by an embodiment of the application. With reference to Figure 1 and Figure 2, step 102 specifically includes: 1021
在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层；1022、以所述光罩为掩膜对所述负性光阻层进行曝光显影工艺，形成负性光阻图案，所述负性光阻图案在所述基板上的正投影与所述透光区在所述基板上的正投影重合。A negative photoresist layer is deposited on the gate insulating layer and the conductive channel pattern; 1022, the negative photoresist layer is exposed and developed using the photomask as a mask to form a negative photoresist Pattern, the orthographic projection of the negative photoresist pattern on the substrate coincides with the orthographic projection of the light-transmitting area on the substrate.
其中，在一种实施方式中，所述负性光阻层的厚度最优的选择是设置在1微米~5微米，但是也可以设置为其他厚度，在此并不做具体限定。Wherein, in one embodiment, the optimal choice for the thickness of the negative photoresist layer is to set at 1 μm to 5 μm, but it can also be set to other thicknesses, which is not specifically limited here.
其中，在一种实施方式中，负性光阻层是通过狭缝式的光阻涂布工艺形成的，因为采用狭缝式的光阻涂布工艺涂布的均匀性较好。Among them, in one embodiment, the negative photoresist layer is formed by a slit-type photoresist coating process, because the slit-type photoresist coating process has better coating uniformity.
另外，可以理解的，负性光阻层在进行曝光显影工艺后，因为其自身特性，会去除掉与光罩的遮光区在基板上的正投影重合的地方，留下与光罩的透光区在基板上的正投影重合的地方，所以形成的负性光阻图案会与所述透光区在所述基板上的正投影重合。In addition, it is understandable that after the exposure and development process of the negative photoresist layer, because of its own characteristics, it will remove the overlap with the orthographic projection of the shading area of the mask on the substrate, leaving behind the light transmission of the mask. The area is where the orthographic projection on the substrate overlaps, so the formed negative photoresist pattern will overlap with the orthographic projection of the light-transmitting area on the substrate.
具体地，请参阅图1、图3，图3为本申请实施例提供的导电沟道材料的制备方法的第二子流程示意图。结合图1、图3所示，步骤103具体包括：1031在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层；1032、以所述光罩为掩膜对所述正性光阻层进行曝光显影工艺，形成正性光阻图案，所述正性光阻图案包括第一正性光阻块和第二正性光阻块，所述第一正性光阻块在所述基板上的正投影与所述第一遮光区在所述基板上的正投影重合，所述第二正性光阻块在所述基板上的正投影与所述第二遮光区在所述基板上的正投影重合。Specifically, please refer to FIG. 1 and FIG. 3. FIG. 3 is a schematic diagram of a second sub-process of a method for preparing a conductive channel material provided by an embodiment of the application. As shown in FIGS. 1 and 3, step 103 specifically includes: 1031 sequentially depositing a metal oxide layer, a metal layer, and a positive photoresist on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern. Photoresist layer; 1032, using the photomask as a mask to expose and develop the positive photoresist layer to form a positive photoresist pattern, the positive photoresist pattern comprising a first positive photoresist block and The second positive photoresist block, the orthographic projection of the first positive photoresist block on the substrate coincides with the orthographic projection of the first light shielding area on the substrate, and the second positive photoresist The orthographic projection of the block on the substrate coincides with the orthographic projection of the second shading area on the substrate.
其中，在一种实施方式中，所述金属层的厚度最优的选择是设置在300纳米~1000纳米，但是也可以设置为其他厚度，在此并不做具体限定，因为铜具有电阻率低和成本低廉的优势，所以铜一般作为金属层材料的首选；另外，因为铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌等透明导电薄膜作为扩散阻挡层取代传统钼，钛钼合金等金属材料可提升显示装置的穿透率及开口率，所以金属氧化层一般采用透明导电薄膜材料组成，所述透明导电薄膜材料包括铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌中的一种或组合，所述金属氧化物层的厚度最优的选择是设置在20纳米~60纳米，但是也可以设置为其他厚度，在此并不做具体限定。Wherein, in one embodiment, the optimal choice for the thickness of the metal layer is to set the thickness between 300 nanometers and 1000 nanometers, but it can also be set to other thicknesses, which are not specifically limited here because copper has a low resistivity. And the advantage of low cost, copper is generally the first choice for the metal layer material; in addition, because transparent conductive films such as indium tin oxide, indium zinc oxide and aluminum-doped zinc oxide serve as diffusion barriers instead of traditional molybdenum, titanium-molybdenum alloy Such metal materials can increase the penetration rate and aperture ratio of the display device, so the metal oxide layer is generally composed of transparent conductive film materials. The transparent conductive film materials include indium tin oxide, indium zinc oxide, and aluminum-doped zinc oxide. For one or a combination of the metal oxide layer, the thickness of the metal oxide layer is optimally set to be between 20 nanometers and 60 nanometers, but it can also be set to other thicknesses, which are not specifically limited here.
另外，可以理解的，正性光阻层在进行曝光显影工艺后，因为其自身特性，会去除掉与光罩的透光区在基板上的正投影重合的地方，留下与光罩的遮光区在基板上的正投影重合的地方，所以在形成的包括第一正性光阻块和第二正性光阻块的正性光阻图案中，所述第一正性光阻块在所述基板上的正投影与所述第一遮光区在所述基板上的正投影重合，所述第二正性光阻块在所述基板上的正投影与所述第二遮光区在所述基板上的正投影重合。In addition, it is understandable that after the exposure and development process of the positive photoresist layer, because of its own characteristics, it will remove the overlap with the orthographic projection of the transparent area of the photomask on the substrate, leaving behind the light shielding of the photomask. The area is where the orthographic projections on the substrate overlap, so in the formed positive photoresist pattern including the first positive photoresist block and the second positive photoresist block, the first positive photoresist block is located at the The orthographic projection on the substrate coincides with the orthographic projection of the first shading area on the substrate, and the orthographic projection of the second positive photoresist block on the substrate and the second shading area are in the The orthographic projections on the substrate coincide.
其中，在一种实施方式中，步骤104具体包括：以所述正性光阻图案为保护层对所述金属层进行刻蚀工艺，以去除未被所述正性光阻图案遮挡的部分所述金属层，保留被所述正性光阻图案遮挡的部分所述金属层，其中，被所述正性光阻图案遮挡的部分所述金属层对应第一源极和第一漏极。Wherein, in one embodiment, step 104 specifically includes: using the positive photoresist pattern as a protective layer to perform an etching process on the metal layer to remove the part that is not blocked by the positive photoresist pattern. In the metal layer, a part of the metal layer blocked by the positive photoresist pattern remains, wherein the part of the metal layer blocked by the positive photoresist pattern corresponds to the first source electrode and the first drain electrode.
另外，可以理解的，在以所述正性光阻图案为保护层对所述金属层进行刻蚀工艺形成第一源极和第一漏极时，所述负性光阻图案会对背沟道层进行保护，所以刻蚀液不会对背沟道层造成损伤，不会影响产品的良率和稳定性。In addition, it can be understood that when the metal layer is etched to form the first source electrode and the first drain electrode by using the positive photoresist pattern as a protective layer, the negative photoresist pattern will affect the back groove. The channel layer is protected, so the etching solution will not cause damage to the back channel layer, and will not affect the yield and stability of the product.
具体地，请参阅图1、图4，图4为本申请实施例提供的导电沟道材料的制备方法的第三子流程示意图。结合图1、图4所示，步骤105具体包括：1051、采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出；1052、采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极。Specifically, please refer to FIG. 1 and FIG. 4. FIG. 4 is a schematic diagram of a third sub-process of a method for preparing a conductive channel material provided by an embodiment of the application. 1 and 4, step 105 specifically includes: 1051, using a photoresist stripping process to remove the positive photoresist pattern on the first source and the first drain, so that the The first source and the first drain leak out; 1052, using a photoresist lift-off process to remove the negative photoresist pattern directly under a part of the metal oxide layer, so as to remove the negative photoresist pattern A part of the metal oxide layer directly above is removed to form a second source electrode and a second drain electrode.
另外，可以理解的，在金属氧化物层形成第二源极和第二漏极的方法是通过光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，这样与采用传统的曝光显影刻蚀工艺相比，不会产生底部裂纹的问题，能提高薄膜晶体管的良率和稳定性。In addition, it is understandable that the method of forming the second source electrode and the second drain electrode on the metal oxide layer is to remove the negative photoresist pattern located directly under a part of the metal oxide layer through a photoresist stripping process. Compared with the traditional exposure, development and etching process, the problem of bottom cracks will not occur, and the yield and stability of the thin film transistor can be improved.
其中，在一种实施方式中，步骤1051具体包括：在位于所述第一源极以及所述第一漏极上的所述正性光阻图案上喷洒光阻剥离液；通过光阻剥离液使位于所述第一源极以及所述第一漏极上的所述正性光阻图案膨胀、软化以及溶解，从而去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出。Wherein, in one embodiment, step 1051 specifically includes: spraying a photoresist stripping solution on the positive photoresist pattern located on the first source and the first drain; The positive photoresist pattern on the first source and the first drain is expanded, softened, and dissolved, so as to remove the positive photoresist pattern on the first source and the first drain. The positive photoresist pattern allows the first source and the first drain to leak out.
其中，在一种实施方式中，步骤1052具体包括：在位于部分所述金属氧化物层正下方的所述负性光阻图案上形成反向坡度角，以使部分金属氧化物层在爬坡时断裂，进而形成缺口；经缺口向位于部分所述金属氧化物层正下方的所述负性光阻图案上喷洒光阻剥离液；通过光阻剥离液使位于部分所述金属氧化物层正下方的所述负性光阻图案膨胀、软化以及溶解，从而去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极。Wherein, in one embodiment, step 1052 specifically includes: forming a reverse slope angle on the negative photoresist pattern located directly under part of the metal oxide layer, so that part of the metal oxide layer is climbing. The photoresist stripping liquid is sprayed on the negative photoresist pattern directly below part of the metal oxide layer through the gap; the photoresist stripping liquid is used to make the part of the metal oxide layer positive The lower negative photoresist pattern expands, softens, and dissolves, so as to remove part of the negative photoresist pattern directly under the metal oxide layer, so as to remove the part directly above the negative photoresist pattern. The metal oxide layer is removed to form a second source electrode and a second drain electrode.
其中，可以理解的，不仅可以于部分所述金属氧化物层正下方的所述负性光阻图案上形成反向坡度角，从而以使部分金属氧化物层在爬坡时断裂，进而形成使光阻剥离液能够接触到负性光阻图案的缺口，而且还可以通过两层负性光阻堆叠的方式，从而以使部分金属氧化物层在爬坡时断裂，进而形成使光阻剥离液能够接触到负性光阻图案的缺口。Wherein, it is understandable that not only a reverse slope angle can be formed on the negative photoresist pattern directly below part of the metal oxide layer, so that part of the metal oxide layer is broken when climbing a slope, thereby forming a The photoresist stripper can contact the gap of the negative photoresist pattern, and can also be stacked by two layers of negative photoresist, so as to make part of the metal oxide layer break when climbing, and then form the photoresist stripper. Able to touch the gap of the negative photoresist pattern.
进一步的，请参阅图5，图5为本申请实施例提供的薄膜晶体管的制备方法的另一流程示意图。其中，图5所示的导电沟道材料的制备方法与图1所示的导电沟道材料的制备方法的区别在于，图5所示的导电沟道材料的制备方法，在步骤105之后还包括：步骤106，在所述导电沟道图案以及所述第一源极和第一漏极上沉积钝化保护层；107，在钝化保护层上沉积像素电极层。Further, please refer to FIG. 5. FIG. 5 is a schematic diagram of another process of the method for manufacturing a thin film transistor provided by an embodiment of the application. The difference between the preparation method of the conductive channel material shown in FIG. 5 and the preparation method of the conductive channel material shown in FIG. 1 is that the preparation method of the conductive channel material shown in FIG. 5 also includes after step 105 : Step 106, deposit a passivation protection layer on the conductive channel pattern and the first source and first drain; 107, deposit a pixel electrode layer on the passivation protection layer.
具体地，在所述导电沟道图案以及所述第一源极和第一漏极上沉积钝化保护层，然后通过蚀刻工艺对钝化保护层进行蚀刻，以使源漏极电极层漏出，然后沉积像素电极层，使源漏电极的电压信号连接到像素电极。Specifically, a passivation protection layer is deposited on the conductive channel pattern and the first source electrode and the first drain electrode, and then the passivation protection layer is etched through an etching process, so that the source and drain electrode layers leak out, Then the pixel electrode layer is deposited, so that the voltage signals of the source and drain electrodes are connected to the pixel electrodes.
在本申请提供的薄膜晶体管的制备方法，金属氧化物层图案是由光阻剥离工艺形成的，不会产生底部裂纹的问题，而在金属层刻蚀时，铟镓锌氧化物背沟道层有负性光阻保护，所以也可阻挡刻蚀液对铟镓锌氧化物背沟道层的损伤，从而可以在采用透明导电薄膜作为扩散阻挡层材料的前提下不会产生底部裂纹和对铟镓锌氧化物背沟道层造成损伤等问题，提高产品的良率和稳定性。In the method for manufacturing the thin film transistor provided in the present application, the metal oxide layer pattern is formed by the photoresist stripping process, which does not cause the problem of bottom cracks, and when the metal layer is etched, the indium gallium zinc oxide back channel layer With negative photoresist protection, it can also prevent the etching solution from damage to the indium gallium zinc oxide back channel layer, so that under the premise of using a transparent conductive film as the diffusion barrier material, bottom cracks and resistance to indium can not be generated. The gallium-zinc oxide back channel layer causes problems such as damage and improves the yield and stability of the product.
在实际操作中，首先在玻璃基板201上依次形成金属栅极图案202、金属栅极绝缘层203、铟镓锌氧化物沟道层图案204，形成的结构如图6所示，图6为本申请实例形成铟镓锌氧化物沟道层图案时的结构示意图，通过狭缝式的光阻涂布工艺在所述栅极绝缘层203以及所述铟镓锌氧化物沟道层图案204上涂布负性光阻层，所述负性光阻层的厚度为1微米~5微米，并以光罩为掩膜对负性光阻层进行曝光显影工艺，从而形成负性光阻图案205。In actual operation, first, a metal gate pattern 202, a metal gate insulating layer 203, and an indium gallium zinc oxide channel layer pattern 204 are sequentially formed on the glass substrate 201. The formed structure is shown in FIG. 6, which is The application example is a schematic diagram of the structure when the indium gallium zinc oxide channel layer pattern is formed, and the gate insulating layer 203 and the indium gallium zinc oxide channel layer pattern 204 are coated by a slit-type photoresist coating process A negative photoresist layer is arranged, and the thickness of the negative photoresist layer is 1 μm to 5 μm, and the negative photoresist layer is exposed and developed with a photomask as a mask, thereby forming a negative photoresist pattern 205.
接着在所述金属栅极绝缘层203、所述铟镓锌氧化物沟道层图案204以及所述负性光阻图案205上依次沉积铟锡氧化物膜层206、铜膜层以及正性光阻层，所述铟锡氧化物膜层206的厚度为20纳米~60纳米，所述铜膜层的厚度为300纳米~1000纳米，以所述光罩为掩膜对所述正性光阻层进行曝光显影工艺，并通过曝光显影工艺形成正性光阻图案207，所述正性光阻图案207包括第一正性光阻块208和第二正性光阻块209，以所述正性光阻图案207为保护层对所述铜膜层进行刻蚀工艺，以去除未被所述正性光阻图案207遮挡的部分所述铜膜层，保留被所述正性光阻图案遮挡的部分所述铜膜层，其中，被所述正性光阻图案207遮挡的部分所述铜膜层对应第一源极图案210和第一漏极图案211，所述第一源极210位于第一正性光阻块208下方，和所述第一漏极211图案位于第二正性光阻块209下方，形成的结构如图7所示，图7为本申请实例形成第一源极图案和第一漏极图案时的结构示意图。Then on the metal gate insulating layer 203, the indium gallium zinc oxide channel layer pattern 204, and the negative photoresist pattern 205 are sequentially deposited an indium tin oxide film 206, a copper film, and a positive photoresist pattern. The thickness of the indium tin oxide film 206 is 20 to 60 nanometers, the thickness of the copper film is 300 to 1000 nanometers, and the photomask is used as a mask to resist the positive photoresist The layer undergoes an exposure and development process, and a positive photoresist pattern 207 is formed through the exposure and development process. The positive photoresist pattern 207 includes a first positive photoresist block 208 and a second positive photoresist block 209. The positive photoresist pattern 207 is a protective layer that performs an etching process on the copper film layer to remove the part of the copper film that is not blocked by the positive photoresist pattern 207, and remains blocked by the positive photoresist pattern. Part of the copper film layer, wherein the part of the copper film layer that is blocked by the positive photoresist pattern 207 corresponds to the first source pattern 210 and the first drain pattern 211, and the first source 210 is located Below the first positive photoresist block 208 and the pattern of the first drain 211 is below the second positive photoresist block 209, the resulting structure is shown in FIG. 7, which is an example of the application to form the first source Schematic diagram of the structure of the pattern and the first drain pattern.
最后在所述正性光阻图案207上喷洒光阻剥离液，通过光阻剥离液使所述正性光阻图案207膨胀、软化以及溶解，从而去除所述正性光阻图案207，使所述第一源极图案210和第一漏极图案211漏出，使所述负性光阻图案205上形成反向坡度角，以使部分所述铟锡氧化物膜层206在爬坡时断裂，进而形成缺口，经缺口向所述负性光阻图案205上喷洒光阻剥离液，使所述正性光阻图案205膨胀、软化以及溶解，从而去除负性光阻图案205，以将位于所述负性光阻图案205正上方的部分所述铟锡氧化物膜层206去除，形成第二源极图案212和第二漏极图案213，形成的结构如图8所示，图8为本申请实例形成第二源极图案和第二漏极图案时的结构示意图。Finally, a photoresist stripping solution is sprayed on the positive photoresist pattern 207, and the positive photoresist pattern 207 is expanded, softened and dissolved by the photoresist stripping solution, thereby removing the positive photoresist pattern 207 and making the The first source pattern 210 and the first drain pattern 211 leak out, so that a reverse slope angle is formed on the negative photoresist pattern 205, so that part of the indium tin oxide film 206 is broken when climbing, Then, a gap is formed, and the photoresist stripping liquid is sprayed on the negative photoresist pattern 205 through the gap to expand, soften, and dissolve the positive photoresist pattern 205, thereby removing the negative photoresist pattern 205, so that the negative photoresist pattern 205 is removed. The portion of the indium tin oxide film 206 directly above the negative photoresist pattern 205 is removed to form a second source pattern 212 and a second drain pattern 213. The resulting structure is shown in FIG. 8, which is The application example is a schematic diagram of the structure when the second source pattern and the second drain pattern are formed.
参阅图9，图9为本申请实施例提供的薄膜晶体管的结构示意图。如图1所示，本申请实施例提供的薄膜晶体管包括基板301、栅极图案302、栅极绝缘层303、导电沟道图案304、第一源极305、第二源极306、第一漏极307、第二漏极308。Refer to FIG. 9, which is a schematic structural diagram of a thin film transistor provided by an embodiment of the application. As shown in FIG. 1, the thin film transistor provided by the embodiment of the present application includes a substrate 301, a gate pattern 302, a gate insulating layer 303, a conductive channel pattern 304, a first source 305, a second source 306, and a first drain. Pole 307, second drain 308.
所述基板301上设置有所述栅极图案302，所述栅极绝缘层303设置于所述基板301上，且把所述栅极图案302完全覆盖起来，导电沟道图案304设置于所述栅极绝缘层303上，所述第一源极305设置在所述栅极绝缘层303上并与所述导电沟道图案304的一侧连接，所述第二源极306设置在所述第一源极305上，所述第一漏极307设置在所述栅极绝缘层303上并与所述导电沟道图案304的另一侧连接，所述第二漏极308设置在所述第一漏极307上。The substrate 301 is provided with the gate pattern 302, the gate insulating layer 303 is provided on the substrate 301 and completely covers the gate pattern 302, and the conductive channel pattern 304 is provided on the substrate 301. On the gate insulating layer 303, the first source 305 is disposed on the gate insulating layer 303 and connected to one side of the conductive channel pattern 304, and the second source 306 is disposed on the first On a source 305, the first drain 307 is disposed on the gate insulating layer 303 and connected to the other side of the conductive channel pattern 304, and the second drain 308 is disposed on the first A drain 307 is on.
在本申请实施例提供的薄膜晶体管表面还可以设置钝化保护层309和像素电极层310，所述钝化保护层309设置于本申请实施例提供的薄膜晶体管表面，所述像素电极层310设置于所述钝化保护层309上，钝化保护层309一侧设置有一个梯形缺口，像素电极经缺口连接到本申请实施例提供的薄膜晶体管的源漏极的电压信号。A passivation protection layer 309 and a pixel electrode layer 310 may also be provided on the surface of the thin film transistor provided in the embodiment of the application. The passivation protection layer 309 is provided on the surface of the thin film transistor provided in the embodiment of the application, and the pixel electrode layer 310 is provided On the passivation protection layer 309, a trapezoidal gap is provided on one side of the passivation protection layer 309, and the pixel electrode is connected to the voltage signal of the source and drain of the thin film transistor provided in the embodiment of the present application through the gap.
其中，本申请所提供的薄膜晶体管的制备方法的具体实施步骤可参见前面的实施例，在此不再一一赘述。Among them, the specific implementation steps of the manufacturing method of the thin film transistor provided by the present application can be referred to the previous embodiments, and will not be repeated here.
可以理解的，通过上述薄膜晶体管的制备方法所制备的薄膜晶体管，因金属氧化物层图案是由光阻剥离工艺形成的，不会产生底部裂纹的问题，而在金属层刻蚀时，铟镓锌氧化物背沟道层有负性光阻保护，所以也可阻挡刻蚀液对铟镓锌氧化物背沟道层的损伤，从而可以制备出在采用透明导电薄膜作为扩散阻挡层材料的前提下不会产生底部裂纹和对铟镓锌氧化物背沟道层造成损伤等问题的薄膜晶体管，提高薄膜晶体管的良率和稳定性。It is understandable that the thin film transistor prepared by the above thin film transistor manufacturing method, because the metal oxide layer pattern is formed by the photoresist stripping process, will not cause the problem of bottom cracks, and when the metal layer is etched, the indium gallium The zinc oxide back channel layer has negative photoresist protection, so it can also prevent the etching solution from damage to the indium gallium zinc oxide back channel layer, so that it can be prepared on the premise that the transparent conductive film is used as the diffusion barrier material The thin film transistor that does not produce bottom cracks and damages the indium gallium zinc oxide back channel layer and other problems, improves the yield and stability of the thin film transistor.
以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。The above provides a detailed introduction to the implementation of the application, and specific examples are used in this article to illustrate the principles and implementations of the application, and the description of the implementations above is only used to help understand the application. At the same time, for those skilled in the art, according to the idea of the application, there will be changes in the specific implementation and the scope of application. In summary, the content of this specification should not be construed as a limitation to the application.

Claims (17)

  1. 一种薄膜晶体管的制备方法，所述制备方法包括：A preparation method of a thin film transistor, the preparation method includes:
    在基板上依次形成栅极图案、栅极绝缘层、导电沟道图案；Sequentially forming a gate pattern, a gate insulating layer, and a conductive channel pattern on the substrate;
    在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案；Depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern, and forming a negative photoresist pattern through an exposure and development process;
    在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案；A metal oxide layer, a metal layer, and a positive photoresist layer are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern, and a positive photoresist pattern is formed through an exposure and development process ；
    以所述正性光阻图案为保护层对所述金属层进行刻蚀工艺，以去除未被所述正性光阻图案遮挡的部分所述金属层，保留被所述正性光阻图案遮挡的部分所述金属层，其中，被所述正性光阻图案遮挡的部分所述金属层对应第一源极和第一漏极；Perform an etching process on the metal layer using the positive photoresist pattern as a protective layer to remove the part of the metal layer that is not blocked by the positive photoresist pattern, and remain blocked by the positive photoresist pattern Part of the metal layer in, wherein the part of the metal layer that is blocked by the positive photoresist pattern corresponds to a first source electrode and a first drain electrode;
    采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出；Removing the positive photoresist pattern on the first source electrode and the first drain electrode by a photoresist stripping process, so that the first source electrode and the first drain electrode leak out;
    采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极，其中，所述第一源极位于所述第二源极上，所述第一漏极位于所述第二漏极上。A photoresist lift-off process is used to remove a part of the negative photoresist pattern directly below the metal oxide layer, so as to remove a part of the metal oxide layer directly above the negative photoresist pattern to form a second The source electrode and the second drain electrode, wherein the first source electrode is located on the second source electrode, and the first drain electrode is located on the second drain electrode.
  2. 根据权利要求1所述的薄膜晶体管的制备方法，其中，可采用同一光罩形成所述负性光阻图案和所述正性光阻图案：4. The method for manufacturing a thin film transistor according to claim 1, wherein the negative photoresist pattern and the positive photoresist pattern can be formed by using the same photomask:
    其中，所述光罩包括透光区、位于所述透光区一侧的第一遮光区以及位于所述透光区另一侧的第二遮光区，所述第一遮光区在所述基板上的正投影与所述第一源极以及所述第二源极在所述基板上的正投影重合，所述第二遮光区在所述基板上的正投影与所述第一漏极以及所述第二漏极在所述基板上的正投影重合。Wherein, the photomask includes a light-transmitting area, a first light-shielding area located on one side of the light-transmitting area, and a second light-shielding area located on the other side of the light-transmitting area, and the first light-shielding area is on the substrate The orthographic projection on the substrate coincides with the orthographic projection of the first source electrode and the second source electrode on the substrate, and the orthographic projection of the second light-shielding area on the substrate coincides with the orthographic projection of the first drain electrode and the The orthographic projections of the second drain electrode on the substrate coincide.
  3. 根据权利要求2所述的薄膜晶体管的制备方法，其中，所述在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案的步骤，包括：4. The method of manufacturing a thin film transistor according to claim 2, wherein the negative photoresist layer is deposited on the gate insulating layer and the conductive channel pattern, and the negative photoresist pattern is formed through an exposure and development process The steps include:
    在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层；Depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern;
    以所述光罩为掩膜对所述负性光阻层进行曝光显影工艺，形成负性光阻图案，所述负性光阻图案在所述基板上的正投影与所述透光区在所述基板上的正投影重合。The negative photoresist layer is exposed and developed by using the photomask as a mask to form a negative photoresist pattern. The positive projection of the negative photoresist pattern on the substrate is in line with the light-transmitting area. The orthographic projections on the substrate coincide.
  4. 根据权利要求2所述的薄膜晶体管的制备方法，其中，所述在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案的步骤，包括：4. The method of manufacturing a thin film transistor according to claim 2, wherein the step of depositing a metal oxide layer, a metal layer, and a metal layer on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern in sequence The positive photoresist layer and the step of forming a positive photoresist pattern through an exposure and development process include:
    在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层；Depositing a metal oxide layer, a metal layer, and a positive photoresist layer on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern in sequence;
    以所述光罩为掩膜对所述正性光阻层进行曝光显影工艺，形成正性光阻图案，所述正性光阻图案包括第一正性光阻块和第二正性光阻块，所述第一正性光阻块在所述基板上的正投影与所述第一遮光区在所述基板上的正投影重合，所述第二正性光阻块在所述基板上的正投影与所述第二遮光区在所述基板上的正投影重合。The positive photoresist layer is exposed and developed using the photomask as a mask to form a positive photoresist pattern. The positive photoresist pattern includes a first positive photoresist block and a second positive photoresist. Block, the orthographic projection of the first positive photoresist block on the substrate coincides with the orthographic projection of the first light-shielding area on the substrate, and the second positive photoresist block is on the substrate The orthographic projection of is coincident with the orthographic projection of the second shading area on the substrate.
  5. 根据权利要求1所述的薄膜晶体管的制作方法，其中，采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出的步骤，包括：4. The method of manufacturing a thin film transistor according to claim 1, wherein the positive photoresist pattern on the first source and the first drain is removed by a photoresist lift-off process, so that the first The step of leaking a source electrode and the first drain electrode includes:
    在位于所述第一源极以及所述第一漏极上的所述正性光阻图案上喷洒光阻剥离液；Spraying a photoresist stripping solution on the positive photoresist pattern on the first source electrode and the first drain electrode;
    通过光阻剥离液使位于所述第一源极以及所述第一漏极上的所述正性光阻图案膨胀、软化以及溶解，从而去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出。The positive photoresist pattern on the first source and the first drain is expanded, softened, and dissolved by the photoresist stripper, so as to remove the positive photoresist pattern on the first source and the first drain. The positive photoresist pattern on the electrode allows the first source electrode and the first drain electrode to leak out.
  6. 根据权利要求1所述的薄膜晶体管的制作方法，其中，采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极的步骤，包括：4. The method for manufacturing a thin film transistor according to claim 1, wherein the negative photoresist pattern located directly under a part of the metal oxide layer is removed by a photoresist lift-off process, so as to remove the negative photoresist pattern The step of removing a part of the metal oxide layer directly above to form a second source electrode and a second drain electrode includes:
    在位于部分所述金属氧化物层正下方的所述负性光阻图案上形成反向坡度角，以使部分金属氧化物层在爬坡时断裂，进而形成缺口；Forming a reverse slope angle on the negative photoresist pattern directly under part of the metal oxide layer, so that part of the metal oxide layer is broken when climbing a slope, thereby forming a gap;
    经缺口向位于部分所述金属氧化物层正下方的所述负性光阻图案上喷洒光阻剥离液；Spraying a photoresist stripping liquid onto the negative photoresist pattern directly under a part of the metal oxide layer through the notch;
    通过光阻剥离液使位于部分所述金属氧化物层正下方的所述负性光阻图案膨胀、软化以及溶解，从而去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极。A photoresist stripper is used to expand, soften and dissolve the negative photoresist pattern directly under the part of the metal oxide layer, thereby removing the negative photoresist pattern directly under the part of the metal oxide layer , To remove part of the metal oxide layer directly above the negative photoresist pattern to form a second source electrode and a second drain electrode.
  7. 根据权利要求1所述的薄膜晶体管的制备方法，其中，所述金属氧化物层采用透明导电薄膜材料组成，所述透明导电薄膜材料包括铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌中的一种或组合，所述金属氧化物层的厚度为20纳米~60纳米。The method of manufacturing a thin film transistor according to claim 1, wherein the metal oxide layer is composed of a transparent conductive thin film material, and the transparent conductive thin film material includes indium tin oxide, indium zinc oxide, and aluminum-doped oxide. One or a combination of zinc, the thickness of the metal oxide layer is 20 nanometers to 60 nanometers.
  8. 一种薄膜晶体管的制备方法，所述制备方法包括：A preparation method of a thin film transistor, the preparation method includes:
    在基板上依次形成栅极图案、栅极绝缘层、导电沟道图案；Sequentially forming a gate pattern, a gate insulating layer, and a conductive channel pattern on the substrate;
    在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案；Depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern, and forming a negative photoresist pattern through an exposure and development process;
    在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案；A metal oxide layer, a metal layer, and a positive photoresist layer are sequentially deposited on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern, and a positive photoresist pattern is formed through an exposure and development process ；
    通过刻蚀工艺对所述金属层进行刻蚀，以形成金属图案，所述金属图案包括第一源极和第一漏极；Etching the metal layer by an etching process to form a metal pattern, the metal pattern including a first source electrode and a first drain electrode;
    采用光阻剥离工艺去除所述正性光阻图案以及所述负性光阻图案，以形成金属氧化物图案，所述金属氧化物图案包括第二源极和第二漏极，其中，所述第一源极位于所述第二源极上，所述第一漏极位于所述第二漏极上。The positive photoresist pattern and the negative photoresist pattern are removed by a photoresist lift-off process to form a metal oxide pattern. The metal oxide pattern includes a second source electrode and a second drain electrode, wherein the The first source is located on the second source, and the first drain is located on the second drain.
  9. 根据权利要求8所述的薄膜晶体管的制备方法，其中，可采用同一光罩形成所述负性光阻图案和所述正性光阻图案：8. The method for manufacturing a thin film transistor according to claim 8, wherein the negative photoresist pattern and the positive photoresist pattern can be formed by using the same photomask:
    其中，所述光罩包括透光区、位于所述透光区一侧的第一遮光区以及位于所述透光区另一侧的第二遮光区，所述第一遮光区在所述基板上的正投影与所述第一源极以及所述第二源极在所述基板上的正投影重合，所述第二遮光区在所述基板上的正投影与所述第一漏极以及所述第二漏极在所述基板上的正投影重合。Wherein, the photomask includes a light-transmitting area, a first light-shielding area located on one side of the light-transmitting area, and a second light-shielding area located on the other side of the light-transmitting area, and the first light-shielding area is on the substrate The orthographic projection on the substrate coincides with the orthographic projection of the first source electrode and the second source electrode on the substrate, and the orthographic projection of the second light-shielding area on the substrate coincides with the orthographic projection of the first drain electrode and the The orthographic projections of the second drain electrode on the substrate coincide.
  10. 根据权利要求9所述的薄膜晶体管的制备方法，其中，所述在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层，并通过曝光显影工艺形成负性光阻图案的步骤，包括：9. The method of manufacturing a thin film transistor according to claim 9, wherein the negative photoresist layer is deposited on the gate insulating layer and the conductive channel pattern, and a negative photoresist pattern is formed through an exposure and development process The steps include:
    在所述栅极绝缘层以及所述导电沟道图案上沉积负性光阻层；Depositing a negative photoresist layer on the gate insulating layer and the conductive channel pattern;
    以所述光罩为掩膜对所述负性光阻层进行曝光显影工艺，形成负性光阻图案，所述负性光阻图案在所述基板上的正投影与所述透光区在所述基板上的正投影重合。The negative photoresist layer is exposed and developed by using the photomask as a mask to form a negative photoresist pattern. The positive projection of the negative photoresist pattern on the substrate is in line with the light-transmitting area. The orthographic projections on the substrate coincide.
  11. 根据权利要求9所述的薄膜晶体管的制备方法，其中，所述在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层，并通过曝光显影工艺形成正性光阻图案的步骤，包括：9. The method for manufacturing a thin film transistor according to claim 9, wherein said depositing a metal oxide layer, a metal layer, and a metal layer on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern in sequence The positive photoresist layer and the step of forming a positive photoresist pattern through an exposure and development process include:
    在所述栅极绝缘层、所述导电沟道图案以及所述负性光阻图案上依次沉积金属氧化物层、金属层以及正性光阻层；Depositing a metal oxide layer, a metal layer, and a positive photoresist layer on the gate insulating layer, the conductive channel pattern, and the negative photoresist pattern in sequence;
    以所述光罩为掩膜对所述正性光阻层进行曝光显影工艺，形成正性光阻图案，所述正性光阻图案包括第一正性光阻块和第二正性光阻块，所述第一正性光阻块在所述基板上的正投影与所述第一遮光区在所述基板上的正投影重合，所述第二正性光阻块在所述基板上的正投影与所述第二遮光区在所述基板上的正投影重合。The positive photoresist layer is exposed and developed using the photomask as a mask to form a positive photoresist pattern. The positive photoresist pattern includes a first positive photoresist block and a second positive photoresist. Block, the orthographic projection of the first positive photoresist block on the substrate coincides with the orthographic projection of the first light-shielding area on the substrate, and the second positive photoresist block is on the substrate The orthographic projection of is coincident with the orthographic projection of the second shading area on the substrate.
  12. 根据权利要求8所述的薄膜晶体管的制备方法，其中，所述通过刻蚀工艺对所述金属层进行刻蚀，以形成金属图案，所述金属图案包括第一源极和第一漏极的步骤，包括：8. The method for manufacturing a thin film transistor according to claim 8, wherein the metal layer is etched by an etching process to form a metal pattern, and the metal pattern includes the first source electrode and the first drain electrode. The steps include:
    以所述正性光阻图案为保护层对所述金属层进行刻蚀工艺，以去除未被所述正性光阻图案遮挡的部分所述金属层，保留被所述正性光阻图案遮挡的部分所述金属层，其中，被所述正性光阻图案遮挡的部分所述金属层对应第一源极和第一漏极。Perform an etching process on the metal layer using the positive photoresist pattern as a protective layer to remove the part of the metal layer that is not blocked by the positive photoresist pattern, and remain blocked by the positive photoresist pattern Part of the metal layer, wherein the part of the metal layer that is blocked by the positive photoresist pattern corresponds to the first source electrode and the first drain electrode.
  13. 根据权利要求8所述的薄膜晶体管的制备方法，其中，所述采用光阻剥离工艺去除所述正性光阻图案以及所述负性光阻图案，以形成金属氧化物图案，所述金属氧化物图案包括第二源极和第二漏极，其中，所述第一源极位于所述第二源极上，所述第一漏极位于所述第二漏极上的步骤，包括：8. The method for manufacturing a thin film transistor according to claim 8, wherein the positive photoresist pattern and the negative photoresist pattern are removed by a photoresist lift-off process to form a metal oxide pattern, and the metal is oxidized The object pattern includes a second source electrode and a second drain electrode, wherein the first source electrode is located on the second source electrode and the first drain electrode is located on the second drain electrode, including:
    采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出；Removing the positive photoresist pattern on the first source electrode and the first drain electrode by a photoresist stripping process, so that the first source electrode and the first drain electrode leak out;
    采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极。A photoresist lift-off process is used to remove a part of the negative photoresist pattern directly below the metal oxide layer, so as to remove a part of the metal oxide layer directly above the negative photoresist pattern to form a second Source and second drain.
  14. 根据权利要求13所述的薄膜晶体管的制作方法，其中，采用光阻剥离工艺去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出的步骤，包括：13. The method of manufacturing a thin film transistor according to claim 13, wherein the positive photoresist pattern on the first source and the first drain is removed by a photoresist lift-off process, so that the first The step of leaking a source electrode and the first drain electrode includes:
    在位于所述第一源极以及所述第一漏极上的所述正性光阻图案上喷洒光阻剥离液；Spraying a photoresist stripping solution on the positive photoresist pattern on the first source electrode and the first drain electrode;
    通过光阻剥离液使位于所述第一源极以及所述第一漏极上的所述正性光阻图案膨胀、软化以及溶解，从而去除位于所述第一源极以及所述第一漏极上的所述正性光阻图案，以使所述第一源极和所述第一漏极漏出。The positive photoresist pattern on the first source and the first drain is expanded, softened, and dissolved by the photoresist stripper, so as to remove the positive photoresist pattern on the first source and the first drain. The positive photoresist pattern on the electrode allows the first source electrode and the first drain electrode to leak out.
  15. 根据权利要求13所述的薄膜晶体管的制作方法，其中，采用光阻剥离工艺去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极的步骤，包括：13. The method of manufacturing a thin film transistor according to claim 13, wherein a photoresist lift-off process is used to remove the negative photoresist pattern directly under a part of the metal oxide layer, so as to remove the negative photoresist pattern The step of removing a part of the metal oxide layer directly above to form a second source electrode and a second drain electrode includes:
    在位于部分所述金属氧化物层正下方的所述负性光阻图案上形成反向坡度角，以使部分金属氧化物层在爬坡时断裂，进而形成缺口；Forming a reverse slope angle on the negative photoresist pattern directly under part of the metal oxide layer, so that part of the metal oxide layer is broken when climbing a slope, thereby forming a gap;
    经缺口向位于部分所述金属氧化物层正下方的所述负性光阻图案上喷洒光阻剥离液；Spraying a photoresist stripping liquid onto the negative photoresist pattern directly under a part of the metal oxide layer through the notch;
    通过光阻剥离液使位于部分所述金属氧化物层正下方的所述负性光阻图案膨胀、软化以及溶解，从而去除位于部分所述金属氧化物层正下方的所述负性光阻图案，以将位于所述负性光阻图案正上方的部分所述金属氧化物层去除，形成第二源极和第二漏极。A photoresist stripper is used to expand, soften and dissolve the negative photoresist pattern directly under the part of the metal oxide layer, thereby removing the negative photoresist pattern directly under the part of the metal oxide layer , To remove part of the metal oxide layer directly above the negative photoresist pattern to form a second source electrode and a second drain electrode.
  16. 根据权利要求8所述的薄膜晶体管的制备方法，其中，所述金属氧化物层采用透明导电薄膜材料组成，所述透明导电薄膜材料包括铟锡氧化物、铟锌氧化物和铝掺杂的氧化锌中的一种或组合，所述金属氧化物层的厚度为20纳米~60纳米。The method for manufacturing a thin film transistor according to claim 8, wherein the metal oxide layer is composed of a transparent conductive thin film material, and the transparent conductive thin film material includes indium tin oxide, indium zinc oxide, and aluminum-doped oxide. One or a combination of zinc, the thickness of the metal oxide layer is 20 nanometers to 60 nanometers.
  17. 一种薄膜晶体管，其包括：A thin film transistor including:
    基板；Substrate
    栅极图案，所述栅极图案设置于所述基板上；A gate pattern, the gate pattern is disposed on the substrate;
    栅极绝缘层，所述栅极绝缘层设置于所述基板上，且把所述栅极图案完全覆盖起来；A gate insulating layer, the gate insulating layer is disposed on the substrate and completely covers the gate pattern;
    导电沟道图案，所述导电沟道图案设置于所述栅极绝缘层上；A conductive channel pattern, the conductive channel pattern is disposed on the gate insulating layer;
    第一源极、第二源极，所述第一源极设置在所述栅极绝缘层上并与所述导电沟道图案的一侧连接，所述第二源极设置在所述第一源极上；A first source electrode and a second source electrode, the first source electrode is arranged on the gate insulating layer and connected to one side of the conductive channel pattern, and the second source electrode is arranged on the first Source
    第一漏极、第二漏极，所述第一漏极设置在所述栅极绝缘层上并与所述导电沟道图案的另一侧连接，所述第二漏极设置在所述第一漏极上。A first drain and a second drain, the first drain is disposed on the gate insulating layer and connected to the other side of the conductive channel pattern, and the second drain is disposed on the first drain. One drain on.
PCT/CN2019/118393 2019-09-04 2019-11-14 Method for manufacturing thin film transistor, and thin film transistor WO2021042559A1 (en)

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