CN102629572A - Thin film transistor liquid crystal display array substrate and manufacturing method thereof - Google Patents
Thin film transistor liquid crystal display array substrate and manufacturing method thereof Download PDFInfo
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- CN102629572A CN102629572A CN2011101895763A CN201110189576A CN102629572A CN 102629572 A CN102629572 A CN 102629572A CN 2011101895763 A CN2011101895763 A CN 2011101895763A CN 201110189576 A CN201110189576 A CN 201110189576A CN 102629572 A CN102629572 A CN 102629572A
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Abstract
Disclosed in the invention are a thin film transistor liquid crystal display (TFT-LCD) array substrate and a manufacturing method thereof, thereby improving the performance of the TFT-LCD array substrate. The method comprises: forming gate lines, data lines, a thin film transistor (TFT), a pixel electrode and first common electrodes on a substrate; coating a negative photoresist on a first surface of the substrate equipped with the first common electrodes; exposing the negative photoresist from a second surface opposite to the first surface and carrying out development; depositing a transparent conducting film on the first surface of the substrate after the development; and stripping the exposed negative photoresist and forming second common electrodes on one first common electrode perpendicular to and opposite to the gate lines and on one first common electrode perpendicular to and opposite to the data lines.
Description
Technical field
The present invention relates to the LCD Technology field, particularly a kind of thin-film transistor LCD device array substrate and preparation method thereof.
Background technology
In recent years, along with progress of science and technology, digital to television begins to come in the daily life.(Thin Firm Transistor Liquid Crystal Display, TFT-LCD) little with its volume, low in energy consumption, radiationless, the resolution advantages of higher becomes present leading products to Thin Film Transistor-LCD.
TFT-LCD mainly is made up of array base palte and color membrane substrates to box, vacuumizes the back envelope therebetween and irritates liquid crystal material, and like this, the TFT-LCD display screen forms hundreds of thousands to pel array up to a million, and each pixel is come display graphics through the control of TFT.
Senior ultra dimension field switch technology (Advanced-Super Dimensional Switching; Be called for short: the longitudinal electric field that produces between the parallel electric field that AD-SDS) is produced through same plane interior pixel electrode or public electrode edge and pixel electrode and public electrode forms multi-dimensional electric field; Make between liquid crystal cell interior pixel electrode or the public electrode, all aligned liquid-crystal molecules can both produce the rotation conversion directly over pixel electrode or the public electrode, thereby to have improved planar orientation be the liquid crystal operating efficiency and increased light transmission efficiency.Senior ultra dimension field switch technology can improve the TFT-LCD picture quality, has advantages such as high permeability, wide visual angle, high aperture, low aberration, low-response time, no water of compaction ripple (push Mura) ripple, is widely used at present.
The array base palte of a kind of TFT-LCD of AD-SDS pattern comprises in the prior art: glass substrate, and the grid line that on this glass substrate, forms, data wire, TFT switch, pixel electrode, and public electrode.Wherein, public electrode is positioned at the top layer of array base palte.The multi-dimensional electric field that pixel electrode and public electrode form drives liquid crystal and reverses, and therefore, needs public electrode that consistent voltage is provided on whole base plate.And public electrode voltages is applied by substrate peripheral, can cause the interior zones of different voltage attenuation of substrate inconsistent like this, and therefore, the square resistance of public electrode is more little, and the performance of array base palte is good more.At present, reduce the square resistance of public electrode through the thickness that increases public electrode.
Generally through behind deposit transparent conductive film on the glass substrate, adopting composition (MASK) technology to form, wherein, MASK technology comprises public electrode: mask, exposure, development, etching and technology such as peel off.And transparent conductive film comprises: amorphous tin indium oxide (ITO) or polycrystalline tin indium oxide (ITO).
In the technology that forms amorphous ITO public electrode,, then need deposit thicker amorphous ito thin film for increasing the thickness of public electrode.But, when the thickness of amorphous ito thin film of deposition reaches certain thickness, 700 dusts for example, at this moment; The amorphous ITO at the glass substrate edge of array base palte is converted into polycrystalline ITO, like this, and in follow-up etching process; Because the etching speed of polycrystalline ITO will be far smaller than the etching speed of amorphous ITO, therefore, after etching technics is accomplished; It is residual to have ITO at the glass substrate edge, can cause pixel bad like this, influences the performance of TFT-LCD.
It is thus clear that the amorphous ITO public electrode in the array base palte of the TFT-LCD of existing AD-SDS pattern can't be very thick, the performance of array base palte also is not fine.
Summary of the invention
The embodiment of the invention provides a kind of thin-film transistor LCD device array substrate and preparation method thereof, in order to the performance of the array base palte of the TFT-LCD that improves the AD-SDS pattern.
The embodiment of the invention provides a kind of manufacture method of thin-film transistor LCD device array substrate, comprising:
On surface of first base, form grid line, data wire, thin-film transistor TFT, pixel electrode and first public electrode;
On the surface of first base that has formed first public electrode, apply negative photoresist;
From with said first relative second said negative photoresist of exposure and develop;
Depositing electrically conductive transparent membrane on the surface of first base after the development;
Peel off the negative photoresist after the exposure, with vertically opposite first public electrode of said grid line on and with vertically opposite first public electrode of said data wire on form second public electrode.
The embodiment of the invention provides a kind of thin-film transistor LCD device array substrate; Comprise: substrate; And the grid line that on surface of first base, forms, data wire, thin-film transistor TFT, pixel electrode and first public electrode, also comprise: with vertically opposite first public electrode of said grid line on and with vertically opposite first public electrode of data wire on second public electrode that forms.
Not only comprise first public electrode in the embodiment of the invention in the TFT-LCD array base palte, but also be included in vertically opposite first public electrode of grid line on and with vertically opposite first public electrode of data wire on second public electrode that forms.Like this, increased in the array base palte thickness with the vertically opposite public electrode of data wire, effectively reduced the square resistance of public electrode, improved the performance of array base palte, thereby further improved the performance of TFT-LCD.
Description of drawings
Fig. 1 is a flow chart of making the TFT-LCD array base palte in the embodiment of the invention;
Fig. 2 (a) is for having formed the cross-sectional schematic of the substrate behind first public electrode in the embodiment of the invention;
Fig. 2 (b) is for having applied the cross-sectional schematic of the substrate of negative photoresist in the embodiment of the invention;
Fig. 2 (c) is the cross-sectional schematic of the substrate behind the exposure imaging in the embodiment of the invention;
Fig. 2 (d) is the cross-sectional schematic of the substrate of depositing electrically conductive transparent membrane in the embodiment of the invention;
Fig. 2 (e) is for peeling off the cross-sectional schematic of the substrate of negative photoresist in the embodiment of the invention.
Embodiment
In the embodiment of the invention; Formed the array base palte of TFT-LCD of AD-SDS pattern according to existing processes after; Also in this array base palte with the vertically opposite public electrode of grid line on and with data wire vertically opposite public electrode on form certain thickness public electrode again, like this, increased in the array base palte thickness with the vertically opposite public electrode of data wire; Effectively reduce the square resistance of public electrode, improved the performance of array base palte.
Referring to Fig. 1, the manufacturing process of the array base palte of the TFT-LCD of AD-SDS pattern comprises:
Step 101: on surface of first base, form grid line, data wire, thin-film transistor TFT, pixel electrode and first public electrode.
Here, substrate is generally glass substrate, can adopt prior art on first of this glass substrate, to form grid line, data wire, thin-film transistor TFT, pixel electrode and first public electrode.For example: adopt existing 1+4MASK technology to produce the TFT-LCD array base palte, perhaps, adopt 1+5MASK technology to produce TFT-LCD and produce the TFT-LCD array base palte.Wherein, MASK technology comprises: mask, exposure, development, etching and technology such as peel off.
The cross-sectional schematic that has formed the substrate behind first public electrode comprises: glass substrate 1, grid line 2, gate insulator 3 (GATE INSULATOR), pixel electrode 4, passivation layer 5 (PASSIVATION LAYER) and first public electrode 6 shown in Fig. 2 (a).Here, surface of first base is the upper surface of glass substrate 1.Certainly, formed on the substrate behind first public electrode and also comprised data wire and thin-film transistor (not shown).Generally, the thickness of pixel electrode 4 is that 400 Izods are right, and the thickness of first public electrode 6 is identical or close with the thickness of pixel electrode 4; Like this; The thickness of first public electrode 6 also is that 400 Izods are right, and preferably, the thickness range of first public electrode 6 is: 300 dusts-600 dust.
Step 102: on the surface of first base that has formed first public electrode 6, apply negative photoresist.
Photoresist can divide two types of negative photoresist and positive photoresists according to its chemical reaction mechanism and development principle.What wherein, form insoluble material after the illumination is negative photoresist.
Here, the cross-sectional schematic of substrate that has applied negative photoresist promptly is coated with negative photoresist 7 on first public electrode 6 shown in Fig. 2 (b).
Step 103: from first relative second exposure negative photoresist and develop.
Through after the above-mentioned steps; Because grid line and data wire are lighttight metal wire; Like this; Light from first second relative incident, and do not made public because of blocking of grid line and data wire on vertically opposite first public electrode of grid line and with negative photoresist on vertically opposite first public electrode of data wire, and other local negative photoresists form insoluble material because of the back of making public.
Like this, adopt the negative photoresist developing liquid developing, can remove unexposed negative photoresist after the development.
Here, the cross-sectional schematic of the substrate behind the exposure imaging is shown in Fig. 2 (c).Surface of first base is the upper surface of glass substrate 1, and then second is the lower surface of glass substrate 1.
Step 104: depositing electrically conductive transparent membrane on the surface of first base after the development.
Depositing electrically conductive transparent membrane on the surface of first base after the development.The material of transparent conductive film can be amorphous tin indium oxide (ITO) or polycrystalline tin indium oxide (ITO).
The thickness of depositing electrically conductive transparent membrane can be any, and preferably, the thickness of depositing electrically conductive transparent membrane is more than or equal to the thickness of first public electrode.The cross-sectional schematic of the substrate of depositing electrically conductive transparent membrane is shown in Fig. 2 (d).Some places have negative photoresist 7 on the surface of first base, and some places do not have negative photoresist 7, deposited amorphous ITO8 on first.
Step 105: peel off the negative photoresist after the exposure, with vertically opposite first public electrode of grid line on and with vertically opposite first public electrode of data wire on form second public electrode.
With on vertically opposite first public electrode of grid line and with vertically opposite first public electrode of data wire on do not have negative photoresist; And the negative photoresist after the exposure is arranged on other positions; Therefore; After peeling off the negative photoresist after the exposure; Have only with vertically opposite first public electrode of grid line on and keep with amorphous ITO on vertically opposite first public electrode of data wire, therefore, with vertically opposite first public electrode of grid line on and with vertically opposite first public electrode of data wire on form second public electrode.
The cross-sectional schematic of substrate of peeling off negative photoresist is shown in Fig. 2 (e).At this moment, with vertically opposite first public electrode of data wire on amorphous ITO be second public electrode 9.Therefore, preferably, the thickness of second public electrode 9 is more than or equal to the thickness of first public electrode 6.Because the thickness of first public electrode 6 is identical or close with the thickness of pixel electrode 4, therefore, the thickness of second public electrode 9 greater than or the thickness that equals pixel electrode 4.When the thickness of pixel electrode 4 was 400 dusts, then the thickness of second public electrode 9 can be between 400 dusts-600 dust.
In the array base palte of the TFT-LCD of the AD-SDS pattern of making according to said process, with vertically opposite first public electrode of grid line on and with vertically opposite first public electrode of data wire on form second public electrode.Like this, increased in the array base palte and the vertically opposite public electrode of grid line, and with the thickness of the vertically opposite public electrode of data wire, effectively reduced the square resistance of public electrode, improved the performance of array base palte.
In the foregoing description; Fig. 2 (a)-Fig. 2 (e) is the cross-sectional schematic of substrate; Therefore, second public electrode shown on the figure with vertically opposite first public electrode of data wire on, but the embodiment of the invention; According to above-mentioned worker's manufacturing process, on vertically opposite first public electrode of grid line, also formed second public electrode.Specifically all no longer illustrate.
For fear of the influence of the amorphous ITO that deposits to fringe region, therefore, in another enforcement of the embodiment of the invention; Before developing, also can adopt box ultraviolet (Cell UV) substrate is made mask plate from the surface of first base negative photoresist that makes public, like this; Substrate peripheral comprises that the negative photoresist of fringe region is all made public; Like this, when carrying out step 104, amorphous ITO can not influence fringe region.Because Cell UV substrate is used for box (Cell) technology is solidified envelope frame glue, this Cell UV substrate interior zone is light tight because metal covers, and like this, after ultraviolet ray (UV) irradiation, solidify in envelope frame glue zone, accomplishes the box operation.Therefore, Cell UV substrate is existing in the existing technology, does not need to make in addition again, and promptly the embodiment of the invention cost that do not need to spend great number again removes to make mask plate.
In order to make second public electrode better combine crystallization with first public electrode, therefore, can also the negative photoresist after step 105 is peeled off exposure in the embodiment of the invention after, the substrate after peeling off is carried out annealing in process.Like this, the ITO of front and back deposition can be good at combining crystallization, has further reduced the square resistance of public electrode, has improved the performance of array base palte.
The array base palte of the TFT-LCD that makes according to above-mentioned technology comprises: substrate; And the grid line that on surface of first base, forms, data wire, thin-film transistor TFT, pixel electrode and first public electrode, also comprise: with vertically opposite first public electrode of grid line on and with vertically opposite first public electrode of data wire on second public electrode that forms.
The cross-sectional schematic of the array base palte of this TFT-LCD is shown in Fig. 2 (e), shown in the figure: glass substrate 1, source-drain layer 2, gate insulator 3, pixel electrode 4, passivation layer 5, first public electrode 6 and second public electrode 9.
In the array base palte of TFT-LCD, preferably the thickness of second public electrode is more than or equal to the thickness of first public electrode.And the thickness of first public electrode is identical or close with the thickness of pixel electrode.Like this, in the array base palte of TFT-LCD,, and increased by one times or more, effectively reduced the square resistance of public electrode with the thickness of the vertically opposite public electrode of data wire with the vertically opposite public electrode of grid line.
In the array base palte that technology shown in the embodiment of the invention is produced, public electrode is an amorphous ITO public electrode, but the embodiment of the invention is not limited thereto, and also can form polycrystalline ITO public electrode.Be in the embodiment of the invention, the material of first public electrode comprises: amorphous tin indium oxide (ITO) or polycrystalline tin indium oxide (ITO); The material of second public electrode comprises: amorphous tin indium oxide (ITO) or polycrystalline tin indium oxide (ITO).
In the embodiment of the invention, not only comprise first public electrode in the TFT-LCD array base palte, but also be included in vertically opposite first public electrode of data wire on second public electrode that forms.Like this, in the array base palte of TFT-LCD, with the vertically opposite public electrode of grid line; And increased with the thickness of the vertically opposite public electrode of data wire; Effectively reduce the square resistance of public electrode, improved the performance of array base palte, thereby further improved the performance of TFT-LCD.
And, when increasing public electrode thickness, need not append mask plate in the embodiment of the invention, like this, can not increase considerably the technology cost.In addition, adopt annealing process to handle, the ITO of deposition can be good at combining crystallization before and after can making, and has further reduced the square resistance of public electrode, has improved the performance of array base palte.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. the manufacture method of a thin-film transistor LCD device array substrate is characterized in that, comprising:
On surface of first base, form grid line, data wire, thin-film transistor TFT, pixel electrode and first public electrode;
On the surface of first base that has formed first public electrode, apply negative photoresist;
From with said first relative second said negative photoresist of exposure and develop;
Depositing electrically conductive transparent membrane on the surface of first base after the development;
Peel off the negative photoresist after the exposure, with vertically opposite first public electrode of said grid line on and with vertically opposite first public electrode of said data wire on form second public electrode.
2. the method for claim 1 is characterized in that, also comprises before said the development:
Will be to box ultraviolet Cell UV substrate as mask plate, from the said surface of first base said negative photoresist that makes public.
3. the method for claim 1 is characterized in that, after the said negative photoresist of peeling off after the exposure, also comprises:
Substrate is carried out annealing in process.
4. the method for claim 1 is characterized in that, the thickness of said second public electrode is more than or equal to the thickness of said first public electrode.
5. the method for claim 1 is characterized in that, the thickness of said first public electrode is identical with the thickness of said pixel electrode or close.
6. thin-film transistor LCD device array substrate; Comprise: substrate; And the grid line that on said surface of first base, forms, data wire, thin-film transistor TFT, pixel electrode and first public electrode; It is characterized in that, also comprise: with vertically opposite first public electrode of said grid line on and with vertically opposite first public electrode of said data wire on second public electrode that forms.
7. array base palte as claimed in claim 6 is characterized in that the thickness of said second public electrode is more than or equal to the thickness of said first public electrode.
8. array base palte as claimed in claim 6 is characterized in that, the thickness of said first public electrode is identical with the thickness of said pixel electrode or close.
9. array base palte as claimed in claim 6 is characterized in that, the material of said first public electrode comprises: amorphous tin indium oxide or polycrystalline tin indium oxide; The material of said second public electrode comprises: amorphous tin indium oxide or polycrystalline tin indium oxide.
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| CN103579104A (en) * | 2012-08-02 | 2014-02-12 | 北京京东方光电科技有限公司 | Array substrate, preparation method thereof and display device |
| WO2021042559A1 (en) * | 2019-09-04 | 2021-03-11 | Tcl华星光电技术有限公司 | Method for manufacturing thin film transistor, and thin film transistor |
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| CN102629572B (en) | 2014-03-12 |
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