WO2021036285A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2021036285A1
WO2021036285A1 PCT/CN2020/085133 CN2020085133W WO2021036285A1 WO 2021036285 A1 WO2021036285 A1 WO 2021036285A1 CN 2020085133 W CN2020085133 W CN 2020085133W WO 2021036285 A1 WO2021036285 A1 WO 2021036285A1
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WIPO (PCT)
Prior art keywords
sub
pixel
light
display area
area
Prior art date
Application number
PCT/CN2020/085133
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English (en)
French (fr)
Inventor
楼均辉
张露
Original Assignee
昆山国显光电有限公司
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Publication date
Application filed by 昆山国显光电有限公司 filed Critical 昆山国显光电有限公司
Publication of WO2021036285A1 publication Critical patent/WO2021036285A1/zh
Priority to US17/470,223 priority Critical patent/US20210408111A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • This application relates to the field of display, in particular to a display panel and a display device.
  • High screen-to-body ratio is the latest development direction of smart electronic products.
  • various sensors on the front of electronic products need to be integrated under the display panel.
  • fingerprint recognition, earpieces and other devices can be better integrated under the display panel, but the integration problem of the front camera of the electronic product still cannot be solved well.
  • the current solution is to dig grooves or punch holes on the display panel corresponding to the position of the camera.
  • it will cause the problem that information cannot be displayed in the grooved or punched area of the display panel.
  • the present application provides a display panel and a display device, which can realize display in the photosensitive component integration area of the display panel.
  • an embodiment of the present application provides a display panel including a main display area, a first sub display area, a second sub display area, and a transition display area.
  • the first sub display area, the second sub display area, and the transition display area are located in On the same side of the main display area, the transition display area is located between the first sub display area and the second sub display area.
  • the light transmittance of the first sub display area is greater than that of the main display area.
  • the display panel includes: first pixels The unit is located in the first sub-display area, and the first pixel unit includes a first sub-pixel; the first pixel circuit is located in the transition display area, and the first pixel circuit is electrically connected to the first sub-pixel for driving the first sub-pixel to display; The second pixel unit is located in the second sub-display area, and the second pixel unit includes the second sub-pixel; and the third pixel unit is located in the transition display area, and the third pixel unit includes the third sub-pixel, wherein the first sub-pixel of the same color At least two of the pixel, the second sub-pixel, and the third sub-pixel have the same size.
  • the light transmittance of the first sub-display area is greater than that of the main display area, so that the display panel can be integrated with photosensitive components on the back of the first sub-display area to realize the
  • the light-sensitive component is integrated under the screen, and the first sub-display area can display pictures, which increases the display area of the display panel and realizes the full-screen design of the display device.
  • the first pixel circuit is located in the transition display area, so that the first sub-display area has more spatially arranged light-transmitting areas, and the light-transmitting performance of the first sub-display area is improved.
  • At least two of the first sub-pixel, the second sub-pixel, and the third sub-pixel of the same color have the same size, thereby reducing the gap between any at least two of the first sub-display area, the second sub-display area, and the transition display area. Display differences and differences in life, improve the integration effect of the display panel.
  • an embodiment of the present application provides a display device, which includes the display panel of any one of the foregoing embodiments.
  • FIG. 1 is a schematic top view of a display panel provided according to an embodiment of the present application.
  • Fig. 2 is a partial enlarged schematic diagram of area Q1 in Fig. 1;
  • Fig. 3 is a partial enlarged schematic diagram of area Q2 in Fig. 2;
  • Figure 4 is a cross-sectional view taken along the line A-A in Figure 3;
  • Figure 5 is a cross-sectional view taken along the line B-B in Figure 3;
  • FIG. 6 is a schematic top view of a display device according to an embodiment of the present application.
  • Fig. 7 is a cross-sectional view taken along the line C-C in Fig. 6.
  • a light-transmitting display area may be provided on the above-mentioned electronic device, and the photosensitive component may be arranged under the light-transmitting display area, and a full-screen display of the electronic device can be realized under the condition that the photosensitive component is guaranteed to work normally.
  • the embodiments of the present application provide a display panel and a display device.
  • the embodiments of the display panel and the display device will be described below with reference to the accompanying drawings.
  • An embodiment of the application provides a display panel, which may be an organic light emitting diode (OLED) display panel.
  • OLED organic light emitting diode
  • the display panel 1000 includes a main display area MA, a first sub display area SA1, a second sub display area SA2, and a transition display area TA.
  • the first sub display area SA1, the second sub display area SA2, and the transition display area TA are located on the same side of the main display area MA, and the transition display area TA is located between the first sub display area SA1 and the second sub display area SA2.
  • the first sub display area SA1, the second sub display area SA2, and the transition display area TA are multiplexed together as the status bar display area BA.
  • the status bar display area BA and the main display area MA are adjacently arranged in the first direction X, and the status bar display area BA is in the shape of a strip extending along a second direction Y, which crosses the first direction X
  • the second direction Y is perpendicular to the first direction X.
  • the light transmittance of the first sub-display area SA1 is greater than the light transmittance of the main display area MA.
  • the status bar display area refers to the area used by the display panel to display the status bar in the screen when the screen is displayed.
  • the light transmittance of the first sub-display area SA1 is greater than or equal to 15%.
  • the display panel 1000 in this embodiment has at least a part of the functional film layer in the first sub-display area SA1 The light transmittance is greater than 80%, and even at least part of the functional film has a light transmittance greater than 90%.
  • the status bar display area BA includes a first sub display area SA1 and a second sub display area SA2.
  • the light transmittance of the first sub display area SA1 is greater than that of the main display area MA.
  • the light rate enables the display panel 1000 to integrate photosensitive components on the back of the first sub-display area SA1 to realize under-screen integration of photosensitive components such as cameras.
  • the first sub-display area SA1 can display images, which increases the display area of the display panel 1000. , Realize the full-screen design of the display device.
  • FIG. 2 is a partial enlarged schematic diagram of the area Q1 in FIG. 1.
  • the display panel 1000 includes a first pixel unit 100, a second pixel unit 200, and a third pixel unit 300.
  • the first pixel unit 100 is located in the first sub-display area SA1, and the first pixel unit 100 includes a first sub-pixel 110.
  • the second pixel unit 200 is located in the second sub-display area SA2, and the second pixel unit 200 includes a second sub-pixel 210.
  • the third pixel unit 300 is located in the transition display area TA.
  • the third pixel unit 300 includes a third sub-pixel 310.
  • the display panel 1000 further includes a first pixel circuit 500, and the first pixel circuit 500 is located in the transition display area TA.
  • the first pixel circuit 500 is electrically connected to the first sub-pixel 110 for driving the first sub-pixel 110 to display. Since the first pixel circuit 500 that drives the first sub-pixel 110 is located in the transition display area TA, the first sub-display area SA1 has more spatially arranged light-transmitting areas, and the light-transmitting performance of the first sub-display area SA1 is improved.
  • the display panel 1000 further includes a fourth pixel unit 400 located in the main display area MA, and the fourth pixel unit 400 includes a fourth sub-pixel 410.
  • the first sub-pixel 110 may include first sub-pixels 110 of multiple colors.
  • each first pixel unit 100 includes a red first sub-pixel 110, a green first sub-pixel 110, and a blue first sub-pixel 110.
  • the second pixel unit 200, the third pixel unit 300, and the fourth pixel unit 400 include the colors of sub-pixels and the number of sub-pixels, which may correspond to the first pixel unit 100, respectively.
  • the color and number of sub-pixels included in the first pixel unit 100 are only an example.
  • the color, number, and arrangement of the sub-pixels included in the first pixel unit 100 can be adjusted. .
  • any at least two of the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color have the same size, thereby reducing the first sub-display area SA1, the second sub-display area SA2, and the transition display.
  • the display difference and life difference between any at least two in the area TA improve the integration effect of the display panel 1000.
  • the size of a component refers to the size of the area occupied by all the structures included (or designed) of each component on the display surface of the display panel 1000.
  • the pixel unit density of the third pixel unit 300 is equal to the pixel unit density of the first pixel unit 100 and the pixel unit density of the second pixel unit 200.
  • the size of the third sub-pixel 310 is the same as the size of the first sub-pixel 110 of the same color and the size of the second sub-pixel 210 of the same color, thereby reducing the size of the first sub-display area SA1, the second sub-display area SA2, and the transition display area TA. Display differences and differences in life, improve the integration effect of the status bar display area BA.
  • the sizes of the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color are the same.
  • the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color may have the same size, for example, the size of the first sub-pixel 110 and the third sub-pixel 310 of the same color
  • the second sub-pixel 210 and the third sub-pixel 310 that are the same or the same color have the same size.
  • FIG. 3 is a partial enlarged schematic diagram of the Q2 area in FIG. 2, and FIG. 3 exemplarily shows a part of the detailed structure of the first sub-pixel 110, the second sub-pixel 210, the third sub-pixel 310, and the fourth sub-pixel 410 of the same color
  • the first sub-pixel 110, the second sub-pixel 210, the third sub-pixel 310, and the fourth sub-pixel 410 of other colors may have similar structures.
  • the first sub-pixel 110 includes a first light-emitting area 110a and a first non-light-emitting area 110b, wherein the first non-light-emitting area 110b is disposed around at least a part of the periphery of the first light-emitting area 110a.
  • the second sub-pixel 210 includes a second light-emitting area 210a and a second non-light-emitting area 210b, and the second non-light-emitting area 210b is disposed around at least a part of the periphery of the second light-emitting area 210a.
  • the third sub-pixel 310 includes a third light-emitting area 310a and a third non-light-emitting area 310b, and the third non-light-emitting area 310b is disposed around at least a part of the periphery of the third light-emitting area 310a.
  • the fourth sub-pixel 410 includes a fourth light-emitting area 410a and a fourth non-light-emitting area 410b, and the fourth non-light-emitting area 410b is disposed around at least a part of the periphery of the fourth light-emitting area 410a.
  • the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color respectively correspond to at least two of the first light-emitting area 110a, the second light-emitting area 210a, and the third light-emitting area 310a.
  • the size is equal and smaller than the size of the fourth light-emitting area 410a of the fourth sub-pixel 410 of the same color, so that at least two of the first sub-display area SA1, the second sub-display area SA2, and the transition display area TA emit light
  • the areas are all smaller than the light-emitting areas of the same-color sub-pixels in the main display area MA, and the display effects and service life of any at least two tend to be the same.
  • the size of the third light-emitting area 310a of the third sub-pixel 310 is the same as the size of the first light-emitting area 110a of the first sub-pixel 110 of the same color, and the size of the second light-emitting area 210a of the second sub-pixel 210 of the same color.
  • the sizes are respectively equal and smaller than the size of the fourth light-emitting region 410a of the fourth sub-pixel 410 of the same color.
  • the light-emitting areas of the sub-pixels in the entire status bar display area BA are smaller than the light-emitting areas of the same-color sub-pixels in the main display area MA, and the display effect and service life of the entire status bar display area BA tend to be consistent .
  • the light transmittance of the first non-light-emitting area 110b is greater than the light transmittance of the first light-emitting area 110a, so that light can pass through the first non-light-emitting area 110b, and the light transmittance of the first sub-display area SA1 is realized.
  • the ratio of the total area of the plurality of first light-emitting regions 110a included in each first pixel unit 100 to the area of the first pixel unit 100 is 0.02 to 0.25.
  • the ratio of the total area of the plurality of first light-emitting regions 110a included in each first pixel unit 100 to the area of the first pixel unit 100 is 0.05 to 0.12, so that the structure of the first pixel unit 100 can balance light transmittance and The relationship between service life and high light transmittance can be obtained under the premise of ensuring sufficient service life.
  • the arrangement rules of at least two of the first pixel unit 100, the second pixel unit 200, and the third pixel unit 300 are the same, thereby further improving the display uniformity of the display panel.
  • the shape of the third sub-pixel 310 is the same as the shape of the first sub-pixel 110 of the same color and the shape of the second sub-pixel 210 of the same color, thereby further improving the uniformity of the status bar display area BA.
  • the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 are all organic light-emitting diode sub-pixels.
  • the display panel 1000 includes a substrate 910, a device layer 920 located on the substrate 910, and a pixel definition layer 930 located on the device layer 920.
  • the substrate 910 may be made of transparent materials such as glass or polyimide (PI).
  • the device layer 920 may include pixel circuits for driving display of each sub-pixel, and the device layer 920 may be configured as a transparent layer structure.
  • the pixel definition layer 930 may include pixel openings for accommodating the light emitting structure of each sub-pixel.
  • the first sub-pixel 110 includes a first electrode 111, a first light emitting structure 112 located on the first electrode 111, and a second electrode 113 located on the first light emitting structure 112.
  • the second sub-pixel 210 includes a third electrode 211, a second light emitting structure 212 located on the third electrode 211, and a fourth electrode 213 located on the second light emitting structure 212.
  • the third sub-pixel 310 includes a fifth electrode 311, a third light-emitting structure 312 on the fifth electrode 311, and a sixth electrode 313 on the third light-emitting structure 312.
  • the first electrode 111, the third electrode 211, and the fifth electrode 311 are one of the anode and the cathode
  • the second electrode 113, the fourth electrode 213, and the sixth electrode 313 are the other of the anode and the cathode.
  • the first electrode 111, the third electrode 211, and the fifth electrode 311 are anodes, and the first electrode 111, the third electrode 211, and the fifth electrode 311 may be made of transparent conductive material, or may contain light-reflecting materials.
  • the first electrode 111, the third electrode 211, and the fifth electrode 311 are all reflective electrodes.
  • the first electrode 111 is an electrode structure including a reflective layer, for example, includes two light-transmitting conductive layers and a reflective layer sandwiched between the two light-transmitting conductive layers, wherein the light-transmitting conductive layer may be indium oxide.
  • the reflective layer can be a metal layer, for example, made of silver.
  • the second electrode 113 may be a light-transmitting conductive layer, for example, a magnesium-silver alloy with high light transmittance.
  • the first light emitting structure 112 includes an OLED light emitting layer. According to the design requirements of the first light emitting structure 112, it may also include at least one of a hole injection layer, a hole transport layer, an electron injection layer, or an electron transport layer. .
  • the orthographic projection of each first electrode 111 on the substrate 910 is composed of one first graphic unit or a splicing of two or more first graphic units, wherein the first graphic unit includes a circle or an ellipse. At least one selected from the group consisting of, dumbbell, gourd, and rectangle.
  • the orthographic projection of each first light-emitting structure 112 on the substrate 910 may be composed of one second graphic unit or a splicing of two or more second graphic units.
  • the second graphic unit includes a circle or an ellipse.
  • the layer structure is the same, and the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color correspond to the shape and size of at least two of the second electrode 113, the fourth electrode 213, and the sixth electrode 313, respectively. And the same layer structure.
  • the shape, size, and layer structure of the first electrode 111, the third electrode 211, and the fifth electrode 311 corresponding to the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color are the same.
  • the shape, size and layer structure of the first light emitting structure 112, the second light emitting structure 212, and the third light emitting structure 312 corresponding to the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color are the same.
  • the shape, size, and layer structure of the second electrode 113, the fourth electrode 213, and the sixth electrode 313 corresponding to the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 are the same.
  • the size and/or shape of the first sub-pixel 110 and/or the anode structure and/or the cathode structure and/or the light-emitting structure of the first sub-display area SA1 and the second sub-pixel The size and/or shape of the second sub-pixel 210 of the display area SA2 and/or the anode structure and/or the cathode structure and/or the light-emitting structure correspond to and the size and/or shape of the third sub-pixel 310 of the transition display area TA
  • the same configuration of the anode structure and/or the cathode structure and/or the light-emitting structure can greatly eliminate the first sub-display area SA1 with higher light transmittance and the transition display area TA and the second sub-display area with lower light transmittance.
  • the display difference and life difference of the area SA2 can improve the integration effect of the status bar display area BA.
  • the status bar display area BA is not used in most application scenarios and time periods with the main display area MA’s display content type, and most of the time and area of the status bar display area BA is used to display black, and the display between the main display area MA The difference is not easy to reflect. Therefore, the display uniformity of the status bar display area BA in the display panel according to the foregoing embodiment is relatively high, so that the overall display effect of the display panel 1000 is more coordinated.
  • the first electrodes 111 of at least two adjacent first sub-pixels 110 of the same color are interconnected to form a first interconnection electrode IE1, and at least two adjacent second sub-pixels of the same color are interconnected
  • the third electrode 211 of 210 is interconnected as a second interconnection electrode IE2, and the fifth electrodes 311 of at least two adjacent third sub-pixels 310 of the same color are interconnected as a third interconnection electrode IE3.
  • the structure of a first interconnection electrode IE1, a structure of a second interconnection electrode IE2, and a structure of a third interconnection electrode IE3 are exemplarily shown.
  • the remaining first sub-pixel 110 or Both the second sub-pixel 210 or the third sub-pixel 310 may be interconnected as the first interconnection electrode IE1 or the second interconnection electrode IE2 or the third interconnection electrode IE3 through a similar rule.
  • the first electrodes 111 of the first sub-pixels 110 of the same color and adjacent to each other are electrically connected through the first interconnection conductor 114, and every predetermined number of the first electrodes 111 are interconnected through the first interconnection conductor 114 as described above.
  • the third electrodes 211 of the second sub-pixels 210 of the same color and adjacent to each other are electrically connected through the second interconnection conductor 214, and every predetermined number of third electrodes 211 are interconnected through the second interconnection conductor 214 as described above.
  • the fifth electrodes 311 of the same color and adjacent third sub-pixels 310 are electrically connected through a third interconnection conductor 314, and every predetermined number of fifth electrodes 311 are interconnected through the third interconnection conductor 314 as the above-mentioned The third interconnection electrode IE3.
  • the wiring of the first sub-display area SA1 with higher light transmittance can be reduced, and the transmittance can be improved. Light performance.
  • the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color respectively correspond to any of the first interconnection electrode IE1, the second interconnection electrode IE2, and the third interconnection electrode IE3
  • the shapes of at least the two are the same, so that the display effects and lifespan of at least two of the first sub display area SA1, the second sub display area SA2, and the transition display area TA tend to be consistent.
  • the first interconnection electrode IE1, the second interconnection electrode IE2, and the third interconnection electrode IE3 respectively corresponding to the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color have the same shape. , So as to further ensure that the display effect and life span of the first sub display area SA1, the second sub display area SA2, and the transition display area TA tend to be consistent.
  • the display panel 1000 further includes a second pixel circuit 600 and a third pixel circuit 700.
  • the second pixel circuit 600 is located in the second sub-display area SA2, and the second pixel circuit 600 is electrically connected to the second sub-pixel 210 for driving the second sub-pixel 210 to display.
  • the third pixel circuit 700 is electrically connected to the third sub-pixel 310 for driving the third sub-pixel 310 to display, and the third pixel circuit 700 may be located in the transition display area TA.
  • the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color respectively correspond to at least two of the first pixel circuit 500, the second pixel circuit 600, and the third pixel circuit 700
  • the circuit structure is the same.
  • the first pixel circuit 500, the second pixel circuit 600, and the third pixel circuit 700 corresponding to the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color have the same circuit structure.
  • the circuit structure of the first pixel circuit 500 may be any of a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit.
  • 2T1C circuit refers to a pixel circuit including two transistors (T) and one capacitor (C) in the pixel circuit, and other "7T1C circuit”, “7T2C circuit”, “9T1C circuit” and so on.
  • the first pixel circuit 500, the second pixel circuit 600, and the third pixel circuit 700 all include transistors and capacitors.
  • the first pixel circuit 500, the second pixel circuit 600, and the third pixel circuit 700 are the same.
  • the channel length and channel width of functional transistors are the same, and the capacitance values of capacitors with the same function are the same.
  • the first pixel circuit 500 electrically connected to the first sub-pixel 110 includes a first switching transistor and a first driving transistor, and a second pixel electrically connected to the second sub-pixel 210 of the same color as the first sub-pixel 110
  • the circuit 600 includes a second switching transistor and a second driving transistor
  • the third pixel circuit 700 electrically connected to the third sub-pixel 310 of the same color as the first sub-pixel 110 includes a third switching transistor and a third driving transistor.
  • the channel length and channel width of the first switching transistor, the channel length and channel width of the second switching transistor, and the channel length and channel width of the third switching transistor respectively correspond to the same;
  • the channel length, channel width, channel length and channel width of the second driving transistor, and channel length and channel width of the third driving transistor are respectively correspondingly the same.
  • the ratio of the channel width to the channel length of the at least one first transistor is 4:10.
  • the capacitance value of the first capacitor is 80 femtofarads (fF) to 120 femtofarads (fF) to 120 femtofarads.
  • the configuration is the same structure and device parameters, so that the driving signals received by the first sub-pixel 110, the second sub-pixel 210 of the same color, and the third sub-pixel 310 of the same color also tend to be the same, and the first sub-display area SA1, The display uniformity of the second sub-display area SA2 and the transition display area TA.
  • the display panel 1000 may also include an encapsulation layer and a polarizer and a cover plate located above the encapsulation layer.
  • the cover plate may also be directly arranged above the encapsulation layer without a polarizer, or at least in the first sub-display area SA1.
  • the cover plate is directly set above the packaging layer, without the need for a polarizer to prevent the polarizer from affecting the light collection amount of the photosensitive element arranged under the first sub-display area SA1.
  • the first sub-display area SA1 can also be set above the packaging layer Polarizer.
  • An embodiment of the present application also provides a display device, which may include the display panel 1000 of any of the foregoing embodiments.
  • FIG. 6 is a schematic top view of a display device provided according to an embodiment of the present application
  • FIG. 7 is a cross-sectional view taken along the line C-C in FIG. 6.
  • the display panel 1000 may be the display panel 1000 of one of the above embodiments.
  • the display panel 1000 includes a main display area MA, a first sub display area SA1, a second sub display area SA2, and a transition display area TA .
  • the first sub display area SA1, the second sub display area SA2, and the transition display area TA can be multiplexed together as the status bar display area BA.
  • the light transmittance of the first sub-display area SA1 is greater than the light transmittance of the main display area MA.
  • the display panel 1000 includes a first surface S1 and a second surface S2 opposite to each other, wherein the first surface S1 is a display surface.
  • the display device further includes a photosensitive component 2000, which is located on the second surface S2 side of the display panel 1000, and the photosensitive component 2000 corresponds to the position of the first sub-display area SA1.
  • the photosensitive component 2000 may be an image capturing device for capturing external image information.
  • the photosensitive component 2000 is a Complementary Metal Oxide Semiconductor (CMOS) image acquisition device.
  • CMOS Complementary Metal Oxide Semiconductor
  • the photosensitive component 2000 may also be a Charge-coupled Device (CCD) image acquisition device.
  • CCD Charge-coupled Device
  • Other forms of image acquisition devices It can be understood that the photosensitive component 2000 may not be limited to an image acquisition device.
  • the photosensitive component 2000 may also be a light sensor such as an infrared sensor or a proximity sensor.
  • the light transmittance of the first sub-display area SA1 is greater than the light transmittance of the second sub-display area SA2, so that the display panel 1000 can integrate the photosensitive element 2000 on the back of the first sub-display area SA1,
  • the under-screen integration of the photosensitive component 2000 of the image acquisition device is realized, and at the same time, the first secondary display area SA1 can display pictures, which increases the display area of the display panel 1000 and realizes a full-screen design of the display device.
  • At least two of the first sub-pixel 110, the second sub-pixel 210, and the third sub-pixel 310 of the same color have the same size, thereby reducing any of the first sub-display area SA1, the second sub-display area SA2, and the transition display area TA. At least the difference in display and life between the two improves the integration effect of the display device during display.

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Abstract

本申请公开了一种显示面板及显示装置。显示面板包括主显示区、第一副显示区、第二副显示区以及过渡显示区，第一副显示区的透光率大于主显示区的透光率，显示面板包括：第一像素单元，位于第一副显示区，第一像素单元包括第一子像素；第二像素单元，位于第二副显示区，第二像素单元包括第二子像素；以及第三像素单元，位于过渡显示区，第三像素单元包括第三子像素，其中，同色的第一子像素、第二子像素、第三子像素中的任意至少两者尺寸相同。

Description

显示面板及显示装置
相关申请的交叉引用
本申请要求2019年8月30日提交的、申请号为201921438744.6、发明名称为“显示面板及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示领域，具体涉及一种显示面板及显示装置。
背景技术
高屏占比是智能电子产品的最新发展方向。为了提高屏占比，电子产品正面的多种传感器需要集成到显示面板下方。目前指纹识别、听筒等器件已经能够较好地集成到显示面板的下方，但是电子产品的前摄像头的集成问题仍不能较好地解决。
针对前摄像头的集成，目前的解决方案是在显示面板上对应摄像头的位置进行挖槽或打孔，然而会造成显示面板挖槽或打孔区域不能显示信息的问题。
发明内容
本申请提供一种显示面板及显示装置，能够在显示面板的感光组件集成区域实现显示。
一方面，本申请实施例提供一种显示面板，包括主显示区、第一副显示区、第二副显示区以及过渡显示区，第一副显示区、第二副显示区以及过渡显示区位于主显示区的同侧，过渡显示区位于第一副显示区与第二副显示区之间，第一副显示区的透光率大于主显示区的透光率，显示面板包括：第一像素单元，位于第一副显示区，第一像素单元包括第一子像素； 第一像素电路，位于过渡显示区，第一像素电路与第一子像素电连接，用于驱动第一子像素显示；第二像素单元，位于第二副显示区，第二像素单元包括第二子像素；以及第三像素单元，位于过渡显示区，第三像素单元包括第三子像素，其中，同色的第一子像素、第二子像素、第三子像素中的任意至少两者尺寸相同。
根据本申请实施例的显示面板及显示装置，第一副显示区的透光率大于主显示区的透光率，使得显示面板在第一副显示区的背面可以集成感光组件，实现例如摄像头的感光组件的屏下集成，同时第一副显示区能够显示画面，提高显示面板的显示面积，实现显示装置的全面屏设计。第一像素电路位于过渡显示区，使得第一副显示区具有更多空间布置透光区域，提高第一副显示区的透光性能。
同色的第一子像素、第二子像素、第三子像素中的任意至少两者尺寸相同，从而减少第一副显示区、第二副显示区以及过渡显示区中任意至少两者之间的显示差异以及寿命差异，提高显示面板的一体化效果。
另一方面，本申请实施例提供一种显示装置，其包括前述任一实施方式的显示面板。
附图说明
通过阅读以下参照附图对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显，其中，相同或相似的附图标记表示相同或相似的特征，附图并未按照实际的比例绘制。
图1是根据本申请一种实施例提供的显示面板的俯视示意图；
图2是图1中Q1区域的局部放大示意图；
图3是图2中Q2区域的局部放大示意图；
图4是图3中A-A向的剖面图；
图5是图3中B-B向的剖面图；
图6是根据本申请一种实施例提供的显示装置的俯视示意图；
图7是图6中C-C向的剖面图。
具体实施方式
在诸如手机和平板电脑等智能电子设备上，需要在设置显示面板的一侧集成诸如前置摄像头、红外光传感器、接近光传感器等感光组件。在一些实施例中，可以在上述电子设备上设置透光显示区，将感光组件设置在透光显示区下方，在保证感光组件正常工作的情况下，实现电子设备的全面屏显示。
在具有透光显示区的显示面板中，由于透光显示区内的器件结构、开口率往往与显示面板的其它非透光显示区内的器件结构、开口率不同，使得两者存在显示差异和寿命差异。
为解决上述问题，本申请实施例提供了一种显示面板及显示装置，以下将结合附图对显示面板及显示装置的各实施例进行说明。
本申请实施例提供一种显示面板，该显示面板可以是有机发光二极管(Organic Light Emitting Diode，OLED)显示面板。以下将结合附图对本申请实施例的显示面板进行具体说明。
图1是根据本申请一种实施例提供的显示面板的俯视示意图，显示面板1000包括主显示区MA、第一副显示区SA1、第二副显示区SA2以及过渡显示区TA。第一副显示区SA1、第二副显示区SA2以及过渡显示区TA位于主显示区MA的同侧，过渡显示区TA位于第一副显示区SA1与第二副显示区SA2之间。
可选地，第一副显示区SA1、第二副显示区SA2以及过渡显示区TA共同复用为状态栏显示区BA。状态栏显示区BA与主显示区MA在第一方向X上相邻设置，状态栏显示区BA呈沿第二方向Y延伸的带状，所述第二方向Y与所述第一方向X交叉，可选地，第二方向Y与第一方向X垂直。第一副显示区SA1的透光率大于主显示区MA的透光率。
本申请中，状态栏显示区指显示面板在显示画面时用于显示画面中状态栏的区域。优选地，第一副显示区SA1的透光率大于等于15％。为确保第一副显示区SA1的透光率大于15％，甚至大于40％，甚至具有更高的透光率，本实施例中显示面板1000在第一副显示区SA1的至少部分功能膜层的透光率大于80％，甚至至少部分功能膜层的透光率大于90％。
根据本申请实施例的显示面板1000及显示装置，状态栏显示区BA包括第一副显示区SA1以及第二副显示区SA2，第一副显示区SA1的透光率大于主显示区MA的透光率，使得显示面板1000在第一副显示区SA1的背面可以集成感光组件，实现例如摄像头的感光组件的屏下集成，同时第一副显示区SA1能够显示画面，提高显示面板1000的显示面积，实现显示装置的全面屏设计。
图2是图1中Q1区域的局部放大示意图，显示面板1000包括第一像素单元100、第二像素单元200以及第三像素单元300。第一像素单元100位于第一副显示区SA1，第一像素单元100包括第一子像素110。第二像素单元200位于第二副显示区SA2，第二像素单元200包括第二子像素210。第三像素单元300位于过渡显示区TA。第三像素单元300包括第三子像素310。
显示面板1000还包括第一像素电路500，第一像素电路500位于过渡显示区TA。第一像素电路500与第一子像素110电连接，用于驱动第一子像素110显示。由于驱动第一子像素110的第一像素电路500位于过渡显示区TA，使得第一副显示区SA1具有更多空间布置透光区域，提高第一副显示区SA1的透光性能。
可选地，显示面板1000还包括第四像素单元400，第四像素单元400位于主显示区MA，第四像素单元400包括第四子像素410。
第一子像素110可以包括多种颜色的第一子像素110。可选地，每个第一像素单元100包括一个红色第一子像素110、一个绿色第一子像素110以及一个蓝色第一子像素110。第二像素单元200、第三像素单元300、第四像素单元400包含子像素的颜色以及子像素的个数可以与第一像素单元100分别对应。此外需要说明的是，上述第一像素单元100包括的子像素的颜色和个数仅是一种示例，可选地，第一像素单元100包括的子像素的颜色、个数以及排列方式可以调整。
可选地，同色的第一子像素110、第二子像素210、第三子像素310中的任意至少两者尺寸相同，从而减少第一副显示区SA1、第二副显示区SA2以及过渡显示区TA中任意至少两者之间的显示差异以及寿命差异， 提高显示面板1000的一体化效果。
本申请中，某部件的尺寸，是指每个该部件包含(或设计)的全部结构在显示面板1000的显示面上所占据的面积大小。
在本实施例中，第三像素单元300的像素单元密度与第一像素单元100的像素单元密度、第二像素单元200的像素单元密度相等。第三子像素310的尺寸与同色的第一子像素110的尺寸、同色的第二子像素210的尺寸相同，从而减少第一副显示区SA1、第二副显示区SA2以及过渡显示区TA的显示差异以及寿命差异，提高状态栏显示区BA的一体化效果。
在上述实施例中，同色的第一子像素110、第二子像素210、第三子像素310中的尺寸一致。可选地，同色的第一子像素110、第二子像素210、第三子像素310中，可以是其中两者尺寸相同，例如，同色的第一子像素110与第三子像素310的尺寸相同，或者同色的第二子像素210与第三子像素310的尺寸相同。
图3是图2中Q2区域的局部放大示意图，图3示例性地绘示了同色的第一子像素110、第二子像素210、第三子像素310、第四子像素410的一部分细节结构，其它颜色的第一子像素110、第二子像素210、第三子像素310、第四子像素410可以具有类似的结构。
可选地，第一子像素110包括第一发光区110a和第一非发光区110b，其中第一非发光区110b围绕第一发光区110a的至少部分周边设置。第二子像素210包括第二发光区210a和第二非发光区210b，第二非发光区210b围绕第二发光区210a的至少部分周边设置。第三子像素310包括第三发光区310a和第三非发光区310b，第三非发光区310b围绕第三发光区310a的至少部分周边设置。第四子像素410包括第四发光区410a和第四非发光区410b，第四非发光区410b围绕第四发光区410a的至少部分周边设置。
可选地，同色的第一子像素110、第二子像素210、第三子像素310分别对应的第一发光区110a、第二发光区210a、第三发光区310a中的任意至少两者的尺寸相等，并且小于同色的第四子像素410的第四发光区410a的尺寸，使得第一副显示区SA1、第二副显示区SA2以及过渡显示区TA中任意至少两者的子像素的发光区域均小于主显示区MA同色子像素的发 光区域，并且该任意至少两者的显示效果、使用寿命趋于一致。
在本实施例中，第三子像素310的第三发光区310a的尺寸与同色的第一子像素110的第一发光区110a的尺寸、同色的第二子像素210的第二发光区210a的尺寸分别相等，并且小于同色的第四子像素410的第四发光区410a的尺寸。
根据上述实施例的显示面板1000，整个状态栏显示区BA的子像素的发光区域均小于主显示区MA同色子像素的发光区域，并且整个状态栏显示区BA的显示效果、使用寿命趋于一致。
可选地，第一非发光区110b的透光率大于第一发光区110a的透光率，使得光线能够透过第一非发光区110b，实现第一副显示区SA1的透光性能。
每个第一像素单元100包括的多个第一发光区110a的总面积与第一像素单元100面积之比为0.02至0.25。优选地，每个第一像素单元100包括的多个第一发光区110a的总面积与第一像素单元100面积之比为0.05至0.12，使得第一像素单元100的结构能够平衡透光率与使用寿命的关系，保证足够的使用寿命的前提下获得较高的透光率。
可选地，第一像素单元100、第二像素单元200、第三像素单元300中的任意至少两者的排布规律相同，从而进一步提高显示面板显示的均一性。
可选地，第三子像素310的形状与同色的第一子像素110的形状、同色的第二子像素210的形状相同，从而进一步提高状态栏显示区BA的均一性。
可选地，第一子像素110、第二子像素210、第三子像素310均为有机发光二极管子像素。
图4是图3中A-A向的剖面图，图5是图3中B-B向的剖面图。可选地，显示面板1000包括衬底910、位于衬底910上的器件层920以及位于器件层920上的像素定义层930。衬底910可以采用玻璃、聚酰亚胺(Polyimide，PI)等透光材料制成。器件层920可以包括用于驱动各子像素显示的像素电路，器件层920可以配置为透明层结构。像素定义层930可以包括像素开口，像素开口用于容纳各子像素的发光结构。
可选地，第一子像素110包括第一电极111、位于第一电极111上的第 一发光结构112以及位于第一发光结构112上的第二电极113。第二子像素210包括第三电极211、位于第三电极211上的第二发光结构212以及位于第二发光结构212上的第四电极213。第三子像素310包括第五电极311、位于所述第五电极311上的第三发光结构312以及位于第三发光结构312上的第六电极313。其中，第一电极111、第三电极211、第五电极311为阳极、阴极中的一种，第二电极113、第四电极213、第六电极313为阳极、阴极中的另一种。
可选地，第一电极111、第三电极211、第五电极311为阳极，第一电极111、第三电极211、第五电极311可以是透明导电材料制成，也可以是包含能够反射光线的材料制成，例如，第一电极111、第三电极211、第五电极311均为反射电极。
可选地，第一电极111为包括反射层的电极结构，例如是包括两层透光导电层以及夹设在两层透光导电层之间的反射层，其中透光导电层可以是氧化铟锡(Indium tin oxide，ITO)、氧化铟锌等，反射层可以是金属层，例如是银材质制成。第二电极113可以是透光的导电层，例如是透光率较高的镁银合金。
可选地，第一发光结构112包括OLED发光层，根据第一发光结构112的设计需要，其还可以包括空穴注入层、空穴传输层、电子注入层或电子传输层中的至少一种。
可选地，每个第一电极111在衬底910上的正投影由一个第一图形单元组成或由两个以上第一图形单元拼接组成，其中第一图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。通过对第一电极111的形状进行上述配置，能够减少第一副显示区SA1对光线的衍射现象。可选地，每个第一发光结构112在衬底910上的正投影可以由一个第二图形单元组成或由两个以上第二图形单元拼接组成，第二图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。通过对第一发光结构112的形状进行上述配置，能够减少第一副显示区SA1对光线的衍射现象。
可选地，同色的第一子像素110、第二子像素210、第三子像素310分 别对应的第一电极111、第三电极211、第五电极311中的任意至少两者的形状、尺寸以及层结构相同。同色的第一子像素110、第二子像素210、第三子像素310分别对应的第一发光结构112、第二发光结构212、第三发光结构312中的任意至少两者的形状、尺寸以及层结构相同，同色的第一子像素110、第二子像素210、第三子像素310分别对应的第二电极113、第四电极213、第六电极313中的任意至少两者的形状、尺寸以及层结构相同。
在本实施例中，同色的第一子像素110、第二子像素210、第三子像素310分别对应的第一电极111、第三电极211、第五电极311的形状、尺寸以及层结构相同。同色的第一子像素110、第二子像素210、第三子像素310分别对应的第一发光结构112、第二发光结构212、第三发光结构312的形状、尺寸以及层结构相同，同色的第一子像素110、第二子像素210、第三子像素310分别对应的第二电极113、第四电极213、第六电极313的形状、尺寸以及层结构相同。
根据上述本申请实施例的显示面板1000，通过将第一副显示区SA1的第一子像素110的尺寸和/或形状和/或阳极结构和/或阴极结构和/或发光结构与第二副显示区SA2的第二子像素210的尺寸和/或形状和/或阳极结构和/或阴极结构和/或发光结构对应以及与过渡显示区TA的第三子像素310的尺寸和/或形状和/或阳极结构和/或阴极结构和/或发光结构进行相同配置，能够大幅度消除透光率较高的第一副显示区SA1与透光率较低的过渡显示区TA、第二副显示区SA2的显示差异和寿命差异，从而提高状态栏显示区BA的一体化效果。
由于状态栏显示区BA在大部分应用场景和时段下与主显示区MA的显示内容类型不用，并且状态栏显示区BA大部分时间和面积用于显示黑色，与主显示区MA之间的显示差异不容易体现。因此，根据上述实施例的显示面板中状态栏显示区BA自身显示均一性较高，使得显示面板1000的整体显示效果更加协调。
请继续参考图2，可选地，同色且相邻的至少两个第一子像素110的第一电极111互连为第一互连电极IE1，同色且相邻的至少两个第二子像 素210的第三电极211互连为第二互连电极IE2，同色且相邻的至少两个第三子像素310的第五电极311互连为第三互连电极IE3。图2中，示例性示出一个第一互连电极IE1的结构、一个第二互连电极IE2的结构以及一个第三互连电极IE3的结构，可选地，剩余的第一子像素110或者第二子像素210或者第三子像素310均可以通过类似的规律互连为第一互连电极IE1或第二互连电极IE2或第三互连电极IE3。
可选地，同色且相邻的第一子像素110的第一电极111通过第一互连导体114电连接，每预定数量的第一电极111通过该第一互连导体114互连为上述的第一互连电极IE1。
可选地，同色且相邻的第二子像素210的第三电极211通过第二互连导体214电连接，每预定数量的第三电极211通过该第二互连导体214互连为上述的第二互连电极IE2。
可选地，同色且相邻的第三子像素310的第五电极311通过第三互连导体314电连接，每预定数量的第五电极311通过该第三互连导体314互连为上述的第三互连电极IE3。
通过将同色且相邻的至少两个第一子像素110的第一电极111互连为第一互连电极IE1，能够减少透光率较高的第一副显示区SA1的布线，提高其透光性能。
可选地，相同颜色的第一子像素110、第二子像素210、第三子像素310分别对应的第一互连电极IE1、第二互连电极IE2、第三互连电极IE3中的任意至少两者的形状相同，使得第一副显示区SA1、第二副显示区SA2、过渡显示区TA中至少两者的显示效果和寿命趋于一致。
可选地，相同颜色的第一子像素110、第二子像素210、第三子像素310分别对应的第一互连电极IE1、第二互连电极IE2、第三互连电极IE3彼此形状相同，从而进一步保障第一副显示区SA1、第二副显示区SA2、过渡显示区TA的显示效果和寿命趋于一致。
可选地，显示面板1000还包括第二像素电路600以及第三像素电路700。其中，第二像素电路600位于第二副显示区SA2，第二像素电路600与第二子像素210电连接，用于驱动第二子像素210显示。第三像素电路 700与第三子像素310电连接，用于驱动第三子像素310显示，第三像素电路700可以位于过渡显示区TA。
可选地，相同颜色的第一子像素110、第二子像素210、第三子像素310分别对应的第一像素电路500、第二像素电路600、第三像素电路700中的任意至少两者的电路结构一致。本实施例中，相同颜色的第一子像素110、第二子像素210、第三子像素310分别对应的第一像素电路500、第二像素电路600、第三像素电路700的电路结构一致。
第一像素电路500的电路结构可以是2T1C电路、7T1C电路、7T2C电路、或9T1C电路等的任一种。本申请中，“2T1C电路”指像素电路中包括2个晶体管(T)和1个电容(C)的像素电路，其它“7T1C电路”、“7T2C电路”、“9T1C电路”等以此类推。
可选地，所述第一像素电路500、第二像素电路600、第三像素电路700均包括晶体管和电容，第一像素电路500、第二像素电路600、第三像素电路700之间，相同功能的晶体管的沟道长度以及沟道宽度相同，相同功能的电容的电容值相等。
可选地，第一子像素110所电连接的第一像素电路500包括第一开关晶体管和第一驱动晶体管，与该第一子像素110同色的第二子像素210所电连接的第二像素电路600包括第二开关晶体管和第二驱动晶体管，与该第一子像素110同色的第三子像素310所电连接的第三像素电路700包括第三开关晶体管和第三驱动晶体管。其中，第一开关晶体管的沟道长度、沟道宽度、第二开关晶体管的沟道长度、沟道宽度、第三开关晶体管的沟道长度、沟道宽度分别对应相同；第一驱动晶体管的沟道长度、沟道宽度、第二驱动晶体管的沟道长度、沟道宽度、第三驱动晶体管的沟道长度、沟道宽度分别对应相同。
可选地，至少一个第一晶体管的沟道宽度与沟道长度的比值为4∶10。可选地，第一电容的电容值为80飞法(fF)至120飞法。
通过将第一子像素110所电连接的第一像素电路500、同色的第二子像素210所电连接的第二像素电路600、同色的第三子像素310所电连接的第三像素电路700配置为相同的结构和器件参数，使得第一子像素110、 同色的第二子像素210、同色的第三子像素310所接收的驱动信号也趋于一致，进一步提高第一副显示区SA1、第二副显示区SA2和过渡显示区TA的显示均一性。
可选地，显示面板1000还可以包括封装层和位于封装层上方的偏光片和盖板，也可以直接在封装层上方直接设置盖板，无需设置偏光片，或者至少在第一副显示区SA1的封装层上方直接设置盖板，无需设置偏光片，避免偏光片影响对应第一副显示区SA1下方设置的感光元件的光线采集量，当然，第一副显示区SA1的封装层上方也可以设置偏光片。
本申请实施例还提供一种显示装置，该显示装置可以包括上述任一实施方式的显示面板1000。
图6是根据本申请一种实施例提供的显示装置的俯视示意图，图7是图6中C-C向的剖面图。本实施例的显示装置中，显示面板1000可以是上述其中一个实施例的显示面板1000，显示面板1000包括主显示区MA、第一副显示区SA1、第二副显示区SA2以及过渡显示区TA。第一副显示区SA1、第二副显示区SA2以及过渡显示区TA可以共同复用为状态栏显示区BA。第一副显示区SA1的透光率大于主显示区MA的透光率。
显示面板1000包括相对的第一表面S1和第二表面S2，其中第一表面S1为显示面。显示装置还包括感光组件2000，该感光组件2000位于显示面板1000的第二表面S2侧，感光组件2000与第一副显示区SA1位置对应。
感光组件2000可以是图像采集装置，用于采集外部图像信息。本实施例中，感光组件2000为互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，CMOS)图像采集装置，可选地，感光组件2000也可以是电荷耦合器件(Charge-coupled Device，CCD)图像采集装置等其它形式的图像采集装置。可以理解的是，感光组件2000可以不限于是图像采集装置，例如感光组件2000也可以是红外传感器、接近传感器等光传感器。
根据本申请实施例的显示装置，第一副显示区SA1的透光率大于第二副显示区SA2的透光率，使得显示面板1000在第一副显示区SA1的背面 可以集成感光组件2000，实现例如图像采集装置的感光组件2000的屏下集成，同时第一副显示区SA1能够显示画面，提高显示面板1000的显示面积，实现显示装置的全面屏设计。
同色的第一子像素110、第二子像素210、第三子像素310中的任意至少两者尺寸相同，从而减少第一副显示区SA1、第二副显示区SA2以及过渡显示区TA中任意至少两者之间的显示差异以及寿命差异，提高显示装置显示时的一体化效果。

Claims (20)

  1. 一种显示面板，包括主显示区、第一副显示区、第二副显示区以及过渡显示区，所述第一副显示区、所述第二副显示区以及所述过渡显示区位于所述主显示区的同侧，所述过渡显示区位于所述第一副显示区与所述第二副显示区之间，所述第一副显示区的透光率大于所述主显示区的透光率，所述显示面板包括：
    第一像素单元，位于所述第一副显示区，所述第一像素单元包括第一子像素；
    第一像素电路，位于所述过渡显示区，所述第一像素电路与所述第一子像素电连接，用于驱动所述第一子像素显示；
    第二像素单元，位于所述第二副显示区，所述第二像素单元包括第二子像素；以及
    第三像素单元，位于所述过渡显示区，所述第三像素单元包括第三子像素，
    其中，同色的所述第一子像素、所述第二子像素、所述第三子像素中的任意至少两者尺寸相同。
  2. 根据权利要求1所述的显示面板，其中，所述第一子像素包括第一发光区和第一非发光区，所述第一非发光区围绕所述第一发光区的至少部分周边设置，所述第一非发光区的透光率大于所述第一发光区的透光率；
    所述第二子像素包括第二发光区和第二非发光区，所述第二非发光区围绕所述第二发光区的至少部分周边设置；
    所述第三子像素包括第三发光区和第三非发光区，所述第三非发光区围绕所述第三发光区的至少部分周边设置；
    所述显示面板还包括第四像素单元，所述第四像素单元位于所述主显示区，所述第四像素单元包括第四子像素，所述第四子像素包括第四发光区和第四非发光区，所述第四非发光区围绕所述第四发光区的至少部分周边设置；
    其中，同色的所述第一子像素、所述第二子像素、所述第三子像素分 别对应的所述第一发光区、所述第二发光区、所述第三发光区中的任意至少两者的尺寸相等，并且小于同色的所述第四子像素的所述第四发光区的尺寸。
  3. 根据权利要求2所述的显示面板，其中，每个所述第一像素单元包括的多个所述第一发光区的总面积与所述第一像素单元面积之比为0.02至0.25。
  4. 根据权利要求3所述的显示面板，其中，每个所述第一像素单元包括的多个所述第一发光区的总面积与所述第一像素单元面积之比为0.05至0.12。
  5. 根据权利要求1所述的显示面板，其中，所述第一子像素包括第一电极、位于所述第一电极上的第一发光结构以及位于所述第一发光结构上的第二电极；
    所述第二子像素包括第三电极、位于所述第三电极上的第二发光结构以及位于所述第二发光结构上的第四电极；
    所述第三子像素包括第五电极、位于所述第五电极上的第三发光结构以及位于所述第三发光结构上的第六电极；
    所述第一电极、所述第三电极、所述第五电极均为反射电极。
  6. 根据权利要求5所述的显示面板，其中，同色的所述第一子像素、所述第二子像素、所述第三子像素分别对应的所述第一电极、所述第三电极、所述第五电极中的任意至少两者的形状、尺寸以及层结构相同。
  7. 根据权利要求5所述的显示面板，其中，同色的所述第一子像素、所述第二子像素、所述第三子像素分别对应的所述第一发光结构、所述第二发光结构、所述第三发光结构中的任意至少两者的形状、尺寸以及层结构相同。
  8. 根据权利要求5所述的显示面板，其中，同色的所述第一子像素、所述第二子像素、所述第三子像素分别对应的所述第二电极、所述第四电极、第六电极中的任意至少两者的形状、尺寸以及层结构相同。
  9. 根据权利要求5所述的显示面板，其中，同色且相邻的至少两个所述第一子像素的所述第一电极互连为第一互连电极，同色且相邻的至少两 个所述第二子像素的所述第三电极互连为第二互连电极，同色且相邻的至少两个所述第三子像素的所述第五电极互连为第三互连电极，
    相同颜色的所述第一子像素、所述第二子像素、第三子像素分别对应的所述第一互连电极、所述第二互连电极、所述第三互连电极中的任意至少两者的形状相同。
  10. 根据权利要求5所述的显示面板，其中，所述显示面板包括衬底，每个所述第一电极在所述衬底上的正投影由一个第一图形单元组成或由两个以上第一图形单元拼接组成，其中所述第一图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
  11. 根据权利要求5所述的显示面板，其中，所述显示面板包括衬底，每个所述第一发光结构在所述衬底上的正投影可以由一个第二图形单元组成或由两个以上第二图形单元拼接组成，所述第二图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
  12. 根据权利要求1所述的显示面板，其中，所述第一像素单元、所述第二像素单元、所述第三像素单元中的任意至少两者的排布规律相同。
  13. 根据权利要求1所述的显示面板，其中，所述第一副显示区、所述第二副显示区以及所述过渡显示区共同复用为状态栏显示区，所述状态栏显示区与所述主显示区在第一方向上相邻设置，所述状态栏显示区呈沿第二方向延伸的带状，所述第二方向与所述第一方向交叉。
  14. 根据权利要求1所述的显示面板，其中，所述显示面板还包括：
    第二像素电路，位于所述第二副显示区，所述第二像素电路与所述第二子像素电连接，用于驱动所述第二子像素显示；
    第三像素电路，位于所述过渡显示区，所述第三像素电路与所述第三子像素电连接，用于驱动所述第一子像素显示，
    相同颜色的所述第一子像素、所述第二子像素、第三子像素分别对应的所述第一像素电路、所述第二像素电路、所述第三像素电路中的任意至少两者的电路结构一致。
  15. 根据权利要求14所述的显示面板，其中，所述第一像素电路、所述第二像素电路、所述第三像素电路均包括晶体管和电容，所述第一像素 电路、所述第二像素电路、所述第三像素电路之间，相同功能的所述晶体管的沟道长度以及沟道宽度相同，相同功能的所述电容的电容值相等。
  16. 根据权利要求15所述的显示面板，其中，至少一个所述晶体管的沟道宽度与沟道长度的比值为4∶10。
  17. 根据权利要求15所述的显示面板，其中，至少一个所述电容的电容值为80飞法至120飞法。
  18. 根据权利要求1所述的显示面板，其中，所述第一像素电路的电路结构是2T1C电路、7T1C电路、7T2C电路、或9T1C电路中的任一种。
  19. 根据权利要求1所述的显示面板，其中，所述第一副显示区的透光率大于等于15％。
  20. 一种显示装置，，包括根据权利要求1至19任一项所述的显示面板。
PCT/CN2020/085133 2019-08-30 2020-04-16 显示面板及显示装置 WO2021036285A1 (zh)

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