WO2020224063A1 - 显示面板及其制作方法以及显示装置 - Google Patents
显示面板及其制作方法以及显示装置 Download PDFInfo
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- WO2020224063A1 WO2020224063A1 PCT/CN2019/098182 CN2019098182W WO2020224063A1 WO 2020224063 A1 WO2020224063 A1 WO 2020224063A1 CN 2019098182 W CN2019098182 W CN 2019098182W WO 2020224063 A1 WO2020224063 A1 WO 2020224063A1
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- WIPO (PCT)
- Prior art keywords
- layer
- display panel
- gate
- light shielding
- inter
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 467
- 239000010408 film Substances 0.000 claims description 87
- 229920002120 photoresistant polymer Polymers 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 25
- 239000000470 constituent Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 11
- 239000000243 solution Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Definitions
- the present invention relates to the field of display technology, in particular to the manufacture of display devices, and in particular to a display panel, a manufacturing method thereof, and a display device.
- OLED Organic Compared with LCD (Liquid Crystal Display)
- Light-Emitting Diode Organic Light-Emitting Diode
- a common OLED panel 100 needs to form a light shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 105, and a gate layer on the substrate 101.
- the manufacturing process requires a photomask. Therefore, the patterning of these films requires multiple photomasks and multiple yellowing processes, which results in higher manufacturing costs and lower manufacturing efficiency.
- the purpose of the present invention is to provide a display panel, a manufacturing method thereof, and a display device.
- the manufacturing cost caused by the need for multiple photomasks and multiple yellow light manufacturing processes in the prior art is solved. Higher and lower production efficiency.
- An embodiment of the present invention provides a display panel, which includes:
- An anode layer, the anode layer is provided on the substrate;
- a light-shielding layer, the light-shielding layer is provided on the anode layer;
- the thin film transistor layer is provided on the light shielding layer.
- the thin film transistor layer includes:
- a gate insulating layer the gate insulating layer being disposed on the active layer
- a gate layer, the gate layer is provided on the gate insulating layer
- An inter-insulating layer, the inter-insulating layer is provided on the gate layer and the active layer;
- a source-drain layer, the source-drain layer is disposed on the inter-insulating layer, the source-drain layer is electrically connected to the active layer, and the source-drain layer is electrically connected to the light shielding layer , So that the active layer and the anode layer are electrically connected.
- the display panel further includes a first through hole, the first through hole is provided on the inter-insulating layer, and the first through hole is used to electrically connect the active layer and the The source and drain layer.
- the display panel further includes:
- a buffer layer is provided between the light shielding layer and the thin film transistor layer, and the inter-insulating layer is also provided on the buffer layer;
- a second through hole, the second through hole is provided on the inter-insulating layer and the buffer layer, and the second through hole is used to electrically connect the source drain layer and the light shielding layer.
- the gate insulating layer and the gate layer have the same width.
- the display panel further includes a pixel definition layer, and the pixel definition layer is disposed on the inter-insulating layer and the source-drain layer.
- the display panel further includes a light-emitting layer, and the light-emitting layer is disposed in an opening area of the pixel definition layer.
- the constituent material of the light shielding layer is an opaque conductive material.
- An embodiment of the present invention also provides a display device, the display device includes any display panel as described above, and the display panel includes:
- An anode layer, the anode layer is provided on the substrate;
- a light-shielding layer, the light-shielding layer is provided on the anode layer;
- the thin film transistor layer is provided on the light shielding layer.
- the thin film transistor layer includes:
- a gate insulating layer the gate insulating layer being disposed on the active layer
- a gate layer, the gate layer is provided on the gate insulating layer
- An inter-insulating layer, the inter-insulating layer is provided on the gate layer and the active layer;
- a source-drain layer, the source-drain layer is disposed on the inter-insulating layer, the source-drain layer is electrically connected to the active layer, and the source-drain layer is electrically connected to the light shielding layer , So that the active layer and the anode layer are electrically connected.
- the display panel further includes a first through hole, the first through hole is provided on the inter-insulating layer, and the first through hole is used to electrically connect the active layer and the The source and drain layer.
- the display panel further includes:
- a buffer layer is provided between the light shielding layer and the thin film transistor layer, and the inter-insulating layer is also provided on the buffer layer;
- a second through hole, the second through hole is provided on the inter-insulating layer and the buffer layer, and the second through hole is used to electrically connect the source drain layer and the light shielding layer.
- the gate insulating layer and the gate layer have the same width.
- the display panel further includes a pixel definition layer, and the pixel definition layer is disposed on the inter-insulating layer and the source-drain layer.
- the display panel further includes a light-emitting layer, and the light-emitting layer is disposed in an opening area of the pixel definition layer.
- the constituent material of the light shielding layer is an opaque conductive material.
- the embodiment of the present invention also provides a manufacturing method of a display panel, which includes:
- the photoresist layer as a protective layer to etch the light shielding film and the anode film to form an anode layer and a light shielding layer;
- a thin film transistor layer is formed on the light shielding layer.
- forming a thin film transistor layer on the light shielding layer includes:
- the photoresist layer as a protective layer to etch the gate film to form a gate layer
- a source and drain layer is formed on the insulating layer to obtain the thin film transistor layer.
- the present invention provides a display panel and a manufacturing method thereof and a display device.
- the anode layer and the light shielding layer are made by only one photomask
- the gate layer and the gate insulating layer are made by only one
- the photomask is made, and the process of passivation layer and flat layer is also avoided through design improvement.
- the solution reduces the manufacturing cost of the display panel by optimizing the film structure of the display panel, and improves the manufacturing efficiency and yield of the display panel.
- FIG. 1 is a schematic cross-sectional view of a display panel in the prior art.
- FIG. 2 is a schematic cross-sectional view of a display panel provided by an embodiment of the present invention.
- FIG. 3 is another schematic cross-sectional view of a display panel provided by an embodiment of the present invention.
- FIG. 4 is a flowchart of a manufacturing method of a display panel provided by an embodiment of the present invention.
- FIG. 5 is a flowchart of another manufacturing method of a display panel provided by an embodiment of the present invention.
- FIG. 6 is a schematic diagram of a scene of a manufacturing method of a display panel provided by an embodiment of the present invention.
- FIG. 7 is a schematic diagram of another scene of a manufacturing method of a display panel provided by an embodiment of the present invention.
- FIG. 8 is a schematic diagram of another scene of the manufacturing method of the display panel provided by the embodiment of the present invention.
- thickness is a neutral word, and does not mean that it is biased towards thick or thin. It just means that there is a preset value, and the value is uncertain and will be determined according to the actual situation.
- the present invention provides a display device, which includes a display panel as shown in FIGS. 2 and 3.
- the display panel 200 includes a substrate 201, an anode layer 202 disposed on the substrate 201, a light shielding layer 203 disposed on the anode layer 202, and a thin film transistor layer disposed on the light shielding layer 203. 204.
- the thin film transistor layer 204 includes an active layer 2041, a gate insulating layer 2042 disposed on the active layer 2041, a gate layer 2043 disposed on the gate insulating layer 2042, and a gate insulating layer 2043 disposed on the gate insulating layer 2042.
- the gate insulating layer 2042 and the gate layer 2043 can be prepared to have the same width, so that the gate insulating layer 2042 and the gate layer 2043 can be made through the same photomask. The production efficiency of the display panel can be improved.
- the constituent material of the gate insulating layer 2042 may be a substance not limited to silicon oxide, and the constituent material of the gate layer 2043 may be a conductive material not limited to Cu, Al, Mo, and Ti.
- the source-drain layer 2045 includes a source electrode and a drain electrode. During the operation of the display panel 200, the functions of the source electrode and the drain electrode are in an alternating state. And the drain are collectively referred to as the source and drain layer 2045, the source and drain layer 2045 is electrically connected to the active layer 2041, and the source and drain layer 2045 is electrically connected to the light shielding layer 203, so that the The active layer 2041 is electrically connected to the anode layer 202.
- the active layer 2041 is a semiconductor layer, for example, it can be a substance that is not limited to amorphous silicon or oxide semiconductor.
- the active layer 2041 is in a semiconductor state in the channel region. Conduction treatment is required in the source and drain regions. After the conductorization treatment, the active layer 2041 and the source and drain overlap The region is in a conductive state with good conductivity, and electrical signals can be conducted only after the source-drain layer 2045 is overlapped with the region with good conductivity.
- the constituent material of the light shielding layer 203 is an opaque conductive material, such as any opaque metal such as Cu and Mo or other non-metallic opaque materials;
- the source and drain layer 2045 is a conductive film layer, such as: The material may not be limited to Cu, Al, Mo, Ti. In this way, since the area where the active layer 2041 and the source and drain overlap, the source and drain layer 2045, and the light shielding layer 203 all have conductivity, the source and drain layer 2045 In this way, the active layer 2041 and the anode layer 202 can be electrically connected.
- the display panel 200 further includes a first through hole 205, and the first through hole 205
- the first through hole 205 is used to electrically connect the active layer 2041 and the source/drain layer 2045;
- the display panel 200 further includes a buffer layer 207, a second Through hole 206, the buffer layer 207 is provided between the light shielding layer 203 and the thin film transistor layer 204, the inter-insulating layer 2044 is also provided on the buffer layer 207, and the second through hole 206 is provided On the inter-insulating layer 2044 and the buffer layer 207, the second through hole 206 is used to electrically connect the source drain layer 2045 and the light shielding layer 203.
- the display panel 200 further includes a pixel definition layer 208, and the pixel definition layer 208 is disposed on the inter-insulating layer 2044 and the source-drain layer 2045.
- the pixel defining layer 208 includes two pixel defining portions, and the two pixel defining portions and the anode layer 202 constitute an opening area 2011.
- the constituent material of the pixel defining layer 208 may be a positive or negative photosensitive resin material with hydrophobicity.
- the display panel 200 further includes a light-emitting layer 209 disposed in the opening area 2011 of the pixel definition layer 208.
- the pixel definition layer 208 of the entire display panel 200 includes a plurality of pixel definition portions, and the pixel definition layer 208 is used to define the distribution of the light-emitting layer 209. Therefore, specifically
- the light-emitting layer 209 in the display panel 200 also includes a plurality of light-emitting portions, and the multiple light-emitting portions are respectively disposed in the opening area 2011.
- the light-emitting layer 209 can be produced by an inkjet printing process.
- the display panel 200 further includes a cathode layer 2010, and the cathode layer 2010 is disposed on the light-emitting layer 209. It can be understood that, since the cathode layer 2010 is generally a whole film layer, the cathode layer 2010 may be provided on the pixel defining layer 208 in addition to being provided on the light emitting layer 209.
- the anode layer 202 can be made into a transparent anode.
- the constituent material of the anode layer 202 can be any form of transparent not limited to indium tin oxide and indium zinc oxide. Conductive material.
- the cathode layer 2010 can be made into a cathode with high reflectivity.
- the constituent material of the cathode layer 2010 can be a metal material not limited to Al and Ag.
- the anode layer 202 needs to have good electrical conductivity, high reflectivity, and the work function of the anode layer 202 material must be similar to the work function of the hole injection layer of the display panel 200 to ensure that the two There will not be too much potential barrier to affect device efficiency. Therefore, similar to the above, the anode layer 202 can be made into a transparent anode.
- the constituent material of the anode layer 202 can be any form of transparent conductive material that is not limited to indium tin oxide and indium zinc oxide.
- the display panel 200 further includes a reflective layer 2012, the reflective layer 2012 is disposed between the substrate 201 and the light shielding layer 202, and the reflective layer 2012 may have reflectivity.
- the constituent material of the reflective layer 2012 may be a metal material not limited to Al, Ag, and Cu.
- the cathode layer 2010 can be made into a transparent cathode to achieve a light transmission effect.
- the present invention provides a display panel and a display device.
- the display panel and the display device include: a substrate, an anode layer, a light shielding layer, and a thin film transistor layer sequentially arranged on the substrate; wherein the anode layer and the light shielding layer are made of a photomask ;
- the thin film transistor layer includes an active layer, a gate insulating layer, a gate layer and a source drain layer; wherein the gate layer and the gate insulating layer are made by a photomask.
- the present invention also provides a method for manufacturing a display panel. Referring to FIGS. 4 and 6, the method includes the following steps:
- S101 Provide a substrate 301.
- the substrate 301 may be a glass substrate, and the composition material of the glass substrate includes: quartz powder, strontium carbonate, barium carbonate, boric acid, boric anhydride, alumina, calcium carbonate, barium nitrate, magnesium oxide, tin oxide, oxide At least one of zinc.
- the anode film 3021 when the display panel is of the bottom emission type, the anode film 3021 may be a transparent anode material.
- the anode film 3021 may be made of any form not limited to indium tin oxide and indium zinc oxide.
- Transparent conductive material when the display panel is of the top emission type, the anode film 3021 may be a transparent anode material, for example: the anode film may be made of any form not limited to indium tin oxide and indium zinc oxide
- a reflective layer should also be formed on the surface of the substrate.
- the reflective layer may be a film with high reflectivity.
- the constituent material of the reflective layer may be It is not limited to metal materials of Al, Ag, and Cu.
- the constituent material of the light-shielding film 3031 is an opaque conductive material, such as any opaque metal such as Cu, Mo, or other non-metal opaque materials.
- the gradient mask includes a fully transparent area A1, a partially transparent area A2, and an opaque area A3, corresponding to , The degree of reaction of the photoresist in the A1, A2, and A3 areas is successively reduced; then, the photoresist film 3041 is developed, and the photoresist that has reacted is washed away with a developer, that is, the entire photoresist is washed away.
- photoresist corresponding to the light-transmitting area A1 and the part of the photoresist corresponding to the partially light-transmitting area A2 are obtained to obtain the photoresist film 3042; then, the anode film 3021 corresponding to the area not covered by the photoresist film 3042 is etched away And the light-shielding film 3031 to obtain the anode film 3022 and the light-shielding film 3032; finally, dry etching is used to reduce the thickness of the photoresist film 3042 as a whole until the thickness of the photoresist film 3042 corresponding to the A2 area is reduced to zero.
- Photoresist layer 304 is used to reduce the thickness of the photoresist film 3042 as a whole until the thickness of the photoresist film 3042 corresponding to the A2 area is reduced to zero.
- S105 Using the photoresist layer 304 as a protective layer, etching the light shielding film 3032 and the anode film 3022 to form an anode layer 302 and a light shielding layer 303.
- etching refers to the use of the photoresist layer 304 to etch the light-shielding film 3032 to obtain the light-shielding layer 303.
- the underlying unetched anode film 3022 becomes the anode layer 302.
- the light shielding layer is formed
- the thin film transistor layer includes the following steps:
- An active layer 306 is formed on the light shielding layer 303.
- the active layer 306 is a semiconductor layer, for example, it may be a substance that is not limited to amorphous silicon or oxide semiconductor.
- the constituent material of the gate insulating film 3071 may be a substance not limited to silicon oxide.
- the constituent material of the gate film 3081 may be a conductive material not limited to Cu, Al, Mo, and Ti.
- a photoresist film 3091 is first coated on the upper surface of the gate film 3081; then a photomask is used to expose the photoresist film 3091, and the photomask includes light-transmitting Then, the photoresist film 3091 is developed, and the photoresist that has reacted is washed away with a developing solution, that is, all the photoresist corresponding to the light-transmitting area is washed away to obtain the photoresist layer 309 .
- S1075 Use the photoresist layer 309 as a protective layer to etch the gate film 3081 to form a gate layer 308.
- the etching refers to etching the gate film 3081 using the photoresist layer 309 to obtain the gate layer 308.
- the gate insulating film 3071 is etched to form a gate insulating layer 307.
- the patterns of the gate insulating layer 307 and the gate layer 308 can be basically the same, so the photoresist layer 309 and the gate layer 308 can be used as protective layers to protect the gate insulating film.
- 3071 is etched to form a gate insulating layer 307.
- an interlayer insulating film 30101 and a photoresist film 30111 are sequentially coated on the upper surface of the gate layer 308; then a gradient mask is used to expose the photoresist film 30111.
- the gradient mask includes a fully transparent area B1, a partially transparent area B2, and an opaque area B3.
- the degree of reaction of the photoresist in the B1, B2, and B3 areas is sequentially reduced;
- the photoresist film 30111 is developed, and the photoresist that has reacted is washed away with the developer, that is, all the photoresist corresponding to the fully transparent area B1 and the part of the photoresist corresponding to the partially transparent area B2 are washed to obtain light
- the inter-insulating film 30101 corresponding to the area not covered by the photo-resist film 30112 is etched away to obtain the inter-insulating film 30102;
- the thickness of the photo-resist film 30112 is reduced as a whole by dry etching Until the thickness of the photoresist film 30112 corresponding to the B2 area is reduced to zero, and the photoresist layer 3011 is obtained; continuing, using the photoresist layer 3011 as a protective layer, the inter-insulating film 30102 is etched to form Inter-insulating layer 3010;
- a buffer layer 3012 may be formed on the upper surface of the light shielding layer 303, and the buffer layer 3012 is disposed between the light shielding layer 303 and the active layer 306.
- the inter-insulating layer 3010 includes a first area that is in direct contact with the buffer layer 3012. As shown in FIG. 8, the inter-insulating layer 3010 includes a plurality of shallow holes 3013. The shallow holes 3013 in the first area continue to be etched and become deep holes 3014.
- S1079 forming a source and drain layer 3015 on the inter-insulating layer 3010 to obtain the thin film transistor layer.
- the source and drain layer 3015 can be formed by a complete yellow light process. It can be understood that the source and drain layer 3015 is a conductive film layer, for example, the material may not be limited to Cu, Al, Mo, Ti.
- the source and drain layer 3015 can be electrically connected to the active layer 306 through the shallow hole 3013 and electrically connected to the light shielding layer 303 through the shallow hole 3013 and the deep hole 3014, so that The active layer 306 is electrically connected to the anode layer 302.
- the display panel may further include a pixel definition layer.
- the insulating layer and the source/drain layer are directly formed on the upper surface, which reduces the preparation of the passivation layer and the flat layer, can reduce the production cost of the display panel, and improve the production efficiency.
- the component material of the pixel definition layer can be a hydrophobic positive or negative type. Photosensitive resin material; forming a light-emitting layer in the opening area of the pixel defining layer, the light-emitting layer can be produced by an inkjet printing process; forming a cathode layer on the light-emitting layer.
- the cathode layer when the display panel is of the bottom emission type, can be made into a cathode with high reflectivity.
- the constituent material of the cathode layer can be a metal material that is not limited to Al and Ag;
- the cathode layer can be made into a transparent cathode to achieve a light transmission effect.
- the present invention provides a display panel, a manufacturing method thereof, and a display device.
- the display panel and the display device are compared with the prior art: the anode layer and the light shielding layer are made by only one photomask, the gate layer and The gate insulating layer is made by only one photomask, and the process of passivation layer and flat layer is also avoided through design improvements.
- the solution reduces the manufacturing cost of the display panel by optimizing the film structure of the display panel, and improves the manufacturing efficiency and yield of the display panel.
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Abstract
显示面板及其制作方法以及显示装置,该显示面板和显示装置包括:基板(201)、依次设置在基板(201)上的阳极层(202)、遮光层(203)以及薄膜晶体管层(204);其中阳极层(202)和遮光层(203)通过一个光罩制成;该薄膜晶体管层(204)包括有源层(2041)、栅极绝缘层(2042)、栅极层(2043)以及源漏极层(2045);其中栅极层(2043)和栅极绝缘层(2042)通过一个光罩制成。
Description
本发明涉及显示技术领域,尤其涉及显示器件的制造,具体涉及显示面板及其制作方法以及显示装置。
目前,OLED(Organic
Light-Emitting Diode,有机发光二极管)显示技术相对于LCD(Liquid Crystal Display,液晶显示器)而言,具有自发光、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点。
但是OLED制作工艺复杂、膜层多,如图1所示,普通的OLED面板100需要分别在基板101上形成遮光层102、缓冲层103、有源层104、栅极绝缘层105、栅极层106、间绝缘层107、源漏极层108、钝化层109、平坦层1010、阳极层1011、像素定义层1012、发光层1013以及阴极层1014,所述每一层都需要经过一次黄光制程并且需要一个光罩,因此,要将这些膜层的图形化需要多个光罩以及多次黄光制程,制作成本较高,制作效率较低。
因此,有必要提供可以降低OLED制作成本以及提高制作效率的显示面板及其其制作方法以及显示装置。
本发明的目的在于提供显示面板及其制作方法以及一种显示装置,通过优化显示面板的膜层结构,解决了现有技术中OLED需要多个光罩以及多次黄光制程而造成的制作成本较高,制作效率较低的问题。
为解决上述问题,本发明提供的技术方案如下:
本发明实施例提供一种显示面板,其包括:
基板;
阳极层,所述阳极层设于所述基板上;
遮光层,所述遮光层设于所述阳极层上;
薄膜晶体管层,所述薄膜晶体管层设于所述遮光层上。
在一实施例中,所述薄膜晶体管层包括:
有源层;
栅极绝缘层,所述栅极绝缘层设于所述有源层上;
栅极层,所述栅极层设于所述栅极绝缘层上;
间绝缘层,所述间绝缘层设于所述栅极层以及所述有源层上;
源漏极层,所述源漏极层设于所述间绝缘层上,所述源漏极层与所述有源层电性连接,所述源漏极层与所述遮光层电性连接,使得所述有源层与所述阳极层电性连接。
在一实施例中,所述显示面板还包括第一通孔,所述第一通孔设于所述间绝缘层上,所述第一通孔用于电性连接所述有源层和所述源漏极层。
在一实施例中,所述显示面板还包括:
缓冲层,所述缓冲层设于所述遮光层与所述薄膜晶体管层之间,所述间绝缘层还设于所述缓冲层上;
第二通孔,所述第二通孔设于所述间绝缘层和所述缓冲层上,所述第二通孔用于电性连接所述源漏极层和所述遮光层。
在一实施例中,所述栅极绝缘层和所述栅极层的宽度相等。
在一实施例中,所述显示面板还包括像素定义层,所述像素定义层设于所述间绝缘层以及所述源漏极层上。
在一实施例中,所述显示面板还包括发光层,所述发光层设置在所述像素定义层的开口区内。
在一实施例中,所述遮光层的组成材料为不透明的导电材料。
本发明实施例还提供一种显示装置,所述显示装置包括如上所述的任一显示面板,所述显示面板包括:
基板;
阳极层,所述阳极层设于所述基板上;
遮光层,所述遮光层设于所述阳极层上;
薄膜晶体管层,所述薄膜晶体管层设于所述遮光层上。
在一实施例中,所述薄膜晶体管层包括:
有源层;
栅极绝缘层,所述栅极绝缘层设于所述有源层上;
栅极层,所述栅极层设于所述栅极绝缘层上;
间绝缘层,所述间绝缘层设于所述栅极层以及所述有源层上;
源漏极层,所述源漏极层设于所述间绝缘层上,所述源漏极层与所述有源层电性连接,所述源漏极层与所述遮光层电性连接,使得所述有源层与所述阳极层电性连接。
在一实施例中,所述显示面板还包括第一通孔,所述第一通孔设于所述间绝缘层上,所述第一通孔用于电性连接所述有源层和所述源漏极层。
在一实施例中,所述显示面板还包括:
缓冲层,所述缓冲层设于所述遮光层与所述薄膜晶体管层之间,所述间绝缘层还设于所述缓冲层上;
第二通孔,所述第二通孔设于所述间绝缘层和所述缓冲层上,所述第二通孔用于电性连接所述源漏极层和所述遮光层。
在一实施例中,所述栅极绝缘层和所述栅极层的宽度相等。
在一实施例中,所述显示面板还包括像素定义层,所述像素定义层设于所述间绝缘层以及所述源漏极层上。
在一实施例中,所述显示面板还包括发光层,所述发光层设置在所述像素定义层的开口区内。
在一实施例中,所述遮光层的组成材料为不透明的导电材料。
本发明实施例还提供一种显示面板的制作方法,其包括:
提供一基板;
在所述基板上形成阳极膜;
在所述阳极膜上形成遮光膜;
在所述遮光膜上形成光阻层;
以所述光阻层为保护层,对所述遮光膜以及阳极膜进行刻蚀,形成阳极层以及遮光层;
剥离所述光阻层;
在所述遮光层上形成薄膜晶体管层。
在一实施例中,在所述遮光层上形成薄膜晶体管层包括:
在所述遮光层上形成有源层;
在所述有源层上形成栅极绝缘膜;
在所述栅极绝缘膜上形成栅极膜;
在所述栅极膜上形成光阻层;
以所述光阻层为保护层,对所述栅极膜进行刻蚀,形成栅极层;
以所述光阻层和栅极层为保护层,对所述栅极绝缘膜进行刻蚀,形成栅极绝缘层;
剥离所述光阻层;
在所述栅极层上形成间绝缘层;
在所述间绝缘层上形成源漏极层,得到所述薄膜晶体管层。
本发明提供了显示面板及其制作方法以及显示装置,该显示面板和显示装置与现有技术比较,阳极层和遮光层仅通过一个光罩制成、栅极层和栅极绝缘层仅通过一个光罩制成,并且通过设计上的改进也避免了钝化层、平坦层的制程。该方案通过优化显示面板的膜层结构,降低了显示面板的制作成本,提高了显示面板的制作效率以及良品率。
下面通过附图来对本发明进行进一步说明。需要说明的是,下面描述中的附图仅仅是用于解释说明本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有技术中的一种显示面板的剖面示意图。
图2为本发明实施例提供的一种显示面板的剖面示意图。
图3为本发明实施例提供的显示面板的另一种剖面示意图。
图4为本发明实施例提供的一种显示面板的制作方法的流程图。
图5为本发明实施例提供的显示面板的另一种制作方法的流程图。
图6为本发明实施例提供的一种显示面板的制作方法的场景示意图。
图7为本发明实施例提供的显示面板的制作方法的另一种场景示意图。
图8为本发明实施例提供的显示面板的制作方法的再一种场景示意图。
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整的描述。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明的描述中,需要理解的是,术语“上”、“下”、“表面”等指示的方位或位置关系为基于附图所示的方位或位置关系,其中,“上”只是表面在物体上方,具体指代正上方、斜上方、上表面都可以,只要居于物体水平之上即可,而“表面”则是指代两个物体相互直接接触,以上方位或位置关系仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
需要注意的是,术语“厚度”是中性词,不表示偏向厚或薄,只是表示存在一个预设值,数值不确定,会根据实际情况而定。
另外,还需要说明的是,附图提供的仅仅是和本发明关系比较密切的结构和步骤,省略了一些与发明关系不大的细节,目的在于简化附图,使发明点一目了然,而不是表明实际中装置和方法就是和附图一模一样,不作为实际中装置和方法的限制。
本发明提供一种显示装置,所述显示装置包括如图2、3所示的显示面板。
如图2所示,显示面板200包括基板201、设置在所述基板201上的阳极层202、设置在所述阳极层202上的遮光层203、设置在所述遮光层203上的薄膜晶体管层204。
其中,所述薄膜晶体管层204包括有源层2041、设置在所述有源层2041上的栅极绝缘层2042、设置在所述栅极绝缘层2042上的栅极层2043、设置在所述栅极层2043和所述有源层2041上的间绝缘层2044以及设置在所述间绝缘层2044上的源漏极层2045。
在一实施例中,所述栅极绝缘层2042和所述栅极层2043可以制备成宽度相等,这样可以通过同一个光罩来制作所述栅极绝缘层2042和所述栅极层2043,可以提高显示面板的制作效率。
在一实施例中,所述栅极绝缘层2042的组成材料可以为不限于氧化硅的物质,所述栅极层2043的组成材料可以为不限于Cu、Al、Mo、Ti的导电性材料。
如图2所示,所述源漏极层2045包括源极和漏极,在所述显示面板200工作期间,所述源极和漏极的功能处于交替状态,因此此处将所述源极和漏极统称为所述源漏极层2045,所述源漏极层2045与所述有源层2041电性连接,所述源漏极层2045与所述遮光层203电性连接,使得所述有源层2041与所述阳极层202电性连接。
需要明白的是,所述有源层2041是半导体层,例如:可以为不限于非晶硅、氧化物半导体的物质。所述有源层2041在沟道区处于半导体状态,在源极以及漏极区域需要做导体化处理,导体化处理之后,所述有源层2041与所述源极和漏极搭接处的区域才处于具有良好的导电能力的导体状态,所述源漏极层2045与所述具有良好的导电能力的区域搭接以后才能传导电信号。
特别地,所述遮光层203的组成材料为不透明的导电材料,例如:Cu、Mo等任何不透明的金属或者其他非金属的不透明的物质;所述源漏极层2045为导电膜层,例如:可以不限于为Cu、Al、Mo、Ti的物质。这样,由于所述有源层2041与所述源极和漏极搭接处的区域、所述源漏极层2045以及所述遮光层203都具有导电性,因此,所述源漏极层2045就可以使得所述有源层2041与所述阳极层202电性连接。
在一实施例中,所述显示面板200还包括第一通孔205,所述第一通孔205
设于所述间绝缘层2044上,所述第一通孔205用于电性连接所述有源层2041和所述源漏极层2045;所述显示面板200还包括缓冲层207、第二通孔206,所述缓冲层207设于所述遮光层203与所述薄膜晶体管层204之间,所述间绝缘层2044还设于所述缓冲层207上,所述第二通孔206设于所述间绝缘层2044和所述缓冲层207上,所述第二通孔206用于电性连接所述源漏极层2045和所述遮光层203。
在一实施例中,所述显示面板200还包括像素定义层208,所述像素定义层208设于所述间绝缘层2044以及所述源漏极层2045上。如图2所示,所述像素定义层208包括两个像素定义部,所述两个像素定义部与所述阳极层202构成开口区2011。其中,所述像素定义层208的组成材料可以为具有疏水性的正型或负型光敏树脂材料。
在一实施例中,所述显示面板200还包括发光层209,所述发光层209设置在所述像素定义层208的开口区2011内。可以理解的是,整个所述显示面板200的所述像素定义层208是包括多个像素定义部的,所述像素定义层208是为了定义所述发光层209的分布情况,因此,具体来说,所述显示面板200中发光层209的同样包括多个发光部,所述多个发光部分别设置在所述开口区2011内。其中,所述发光层209中可以通过喷墨打印制程制作。
在一实施例中,所述显示面板200还包括阴极层2010,所述阴极层2010设置在所述发光层209上。可以理解的是,由于阴极层2010一般都是一整层膜层,故所述阴极层2010除了设置在所述发光层209上,还可以设置在所述像素定义层208上。
当所述显示面板200为底发射类型时,所述阳极层202可以做成透明阳极,例如:所述阳极层202的组成材料可以为不限于氧化铟锡、铟锌氧化物的任何形式的透明导电材料。与此同时,所述阴极层2010可以做成反射率高的阴极,例如:所述阴极层2010的组成材料可以为不限于Al、Ag的金属材料。
当所述显示面板200为顶发射类型时,可以理解的是,
所述阳极层202需要同时具备良好的导电率、高反射率、以及所述阳极层202材料的功函数必须与所述显示面板200的空穴注入层的功函数相近,以保证二者之间不会有太大的势垒而影响器件效率。因此,与上述相同的,所述阳极层202可以做成透明阳极,例如:所述阳极层202的组成材料可以为不限于氧化铟锡、铟锌氧化物的任何形式的透明导电材料。需要注意的,如图3所示,所述显示面板200还包括反射层2012,所述反射层2012设置于所述基板201和所述遮光层202之间,所述反射层2012可以为反射率高的膜层,例如:所述反射层2012的组成材料可以为不限于Al、Ag、Cu的金属材料。对应的,所述阴极层2010可以做成透明阴极以实现透光效果。
以上,本发明提供了显示面板以及显示装置,该显示面板和显示装置包括:基板、依次设置在基板上的阳极层、遮光层以及薄膜晶体管层;其中阳极层和遮光层通过一个光罩制成;该薄膜晶体管层包括有源层、栅极绝缘层、栅极层以及源漏极层;其中栅极层和栅极绝缘层通过一个光罩制成。该方案通过优化显示面板的膜层结构,降低了显示面板的制作成本,提高了显示面板的制作效率以及良品率。
本发明还提供一种显示面板的制作方法,参考图4、6,所述方法包括如下步骤:
S101:提供一基板301。
其中,所述基板301可以采用玻璃基板,所述玻璃基板的组成材料包括:石英粉、碳酸锶、碳酸钡、硼酸、硼酐、氧化铝、碳酸钙、硝酸钡、氧化镁、氧化锡、氧化锌中的至少一种。
S102:在所述基板301上形成阳极膜3021。
其中,当所述显示面板为底发射类型时,所述阳极膜3021可以为透明阳极材料,例如:所述阳极膜3021的组成材料可以为不限于氧化铟锡、铟锌氧化物的任何形式的透明导电材料;当所述显示面板为顶发射类型时,所述阳极膜3021可以为透明阳极材料,例如:所述阳极膜的组成材料可以为不限于氧化铟锡、铟锌氧化物的任何形式的透明导电材料,同时,在形成所述阳极膜3021之前还应该在所述基板表面形成反射层,所述反射层可以为反射率高的膜层,例如:所述反射层的组成材料可以为不限于Al、Ag、Cu的金属材料。
S103:在所述阳极膜3021上形成遮光膜3031。
其中,所述遮光膜3031的组成材料为不透明的导电材料,例如:Cu、Mo等任何不透明的金属或者其他非金属的不透明的物质。
S104:在所述遮光膜3031上形成光阻层304。
具体的,如图6所示,先在所述遮光膜3031上表面
涂布一层光阻膜3041;再利用一个梯度光罩对所述光阻膜3041进行曝光,所述梯度光罩包括全透光区A1、部分透光区A2以及不透光区A3,对应的,所述A1、 A2 、A3区域的光阻发生反应的程度依次降低;接着,对所述光阻膜3041进行显影,利用显影液洗掉已经发生反应的光阻,即洗掉所述全透光区A1对应的全部光阻以及所述部分透光区A2对应的部分光阻,得到光阻膜3042;然后,刻蚀掉没有被所述光阻膜3042覆盖的区域对应的阳极膜3021以及遮光膜3031,得到阳极膜3022以及遮光膜3032;最后,利用干刻蚀将所述光阻膜3042的厚度整体减小,直至A2区域对应的光阻膜3042的厚度减小为零,得到光阻层304。
S105:以所述光阻层304为保护层,对所述遮光膜3032以及阳极膜3022进行刻蚀,形成阳极层302以及遮光层303。
可以理解的是,由于所述遮光膜3032位于所述阳极膜3022上表面,所以进行刻蚀指代的是利用所述光阻层304刻蚀所述遮光膜3032,从而得到遮光层303,剩下的未被刻蚀的阳极膜3022即成为阳极层302。
S106:剥离所述光阻层304。
S107:在所述遮光层303上形成薄膜晶体管层。
在一实施例中,参考图5、7,在所述遮光层上形成
薄膜晶体管层包括如下步骤:
S1071:在所述遮光层303上形成有源层306。
其中,所述有源层306是半导体层,例如:可以为不限于非晶硅、氧化物半导体的物质。
S1072:在所述有源层306上形成栅极绝缘膜3071。
其中,所述栅极绝缘膜3071的组成材料可以为不限于氧化硅的物质。
S1073:在所述栅极绝缘膜3071上形成栅极膜3081。
其中,所述栅极膜3081的组成材料可以为不限于Cu、Al、Mo、Ti的导电性材料。
S1074:在所述栅极膜3081上形成光阻层309。
具体的,如图7所示,先在所述栅极膜3081上表面涂布一层光阻膜3091;再利用一个光罩对所述光阻膜3091进行曝光,所述光罩包括透光区和非透光区;接着,对所述光阻膜3091进行显影,利用显影液洗掉已经发生反应的光阻,即洗掉所述透光区对应的全部光阻,得到光阻层309。
S1075:以所述光阻层309为保护层,对所述栅极膜3081进行刻蚀,形成栅极层308。
可以理解的是,所述刻蚀指代的是利用所述光阻层309刻蚀所述栅极膜3081,从而得到栅极层308。
S1076:以所述光阻层309和栅极层308为保护层,
对所述栅极绝缘膜3071进行刻蚀,形成栅极绝缘层307。
可以理解的是,所述栅极绝缘层307和所述栅极层308的图案可以基本一致,故可以以所述光阻层309和栅极层308为保护层,对所述栅极绝缘膜3071进行刻蚀,形成栅极绝缘层307。
S1077:剥离所述光阻层309。
S1078:在所述栅极层308上形成间绝缘层3010。
具体的,如图8所示,先在所述栅极层308上表面依次涂布一层间绝缘膜30101、光阻膜30111;再利用一个梯度光罩对所述光阻膜30111进行曝光,所述梯度光罩包括全透光区B1、部分透光区B2以及不透光区B3,对应的,所述B1、 B2 、B3区域的光阻发生反应的程度依次降低;接着,对所述光阻膜30111进行显影,利用显影液洗掉已经发生反应的光阻,即洗掉所述全透光区B1对应的全部光阻以及所述部分透光区B2对应的部分光阻,得到光阻膜30112;然后,刻蚀掉没有被所述光阻膜30112覆盖的区域对应的间绝缘膜30101,得到间绝缘膜30102;进而,利用干刻蚀将所述光阻膜30112的厚度整体减小,直至B2区域对应的光阻膜30112的厚度减小为零,得到光阻层3011;继续的,以所述光阻层3011为保护层,对所述间绝缘膜30102进行刻蚀,形成间绝缘层3010;最后,剥离所述光阻层3011。
其中,在形成所述薄膜晶体管层之前,还可以在所述遮光层303的上表面形成缓冲层3012,所述缓冲层3012设置于所述遮光层303与所述有源层306之间。可以理解的是,所述间绝缘层3010包括与所述缓冲层3012直接接触的第一区域,如图8所示,所述间绝缘层3010包括多个浅孔3013,进一步的,将位于所述第一区域内的浅孔3013继续进行刻蚀,成为深孔3014。
S1079:在所述间绝缘层3010上形成源漏极层3015,得到所述薄膜晶体管层。
其中,可以通过一个完整的黄光制程形成所述源漏极层3015。可以理解的是,所述源漏极层3015为导电膜层,例如:可以不限于为Cu、Al、Mo、Ti的物质。
特别的,所述源漏极层3015可以通过所述浅孔3013与所述有源层306电性连接以及通过所述浅孔3013、深孔3014与所述遮光层303电性连接,使得所述有源层306与所述阳极层302电性连接。
在一实施例中,所述显示面板还可以包括像素定义层,与图1相比较,本发明中可以在形成了所述薄膜晶体管层以后,在所述间绝缘层以及所述源漏极层上直接形成像素定义层,减少了钝化层以及平坦层的制备,可以降低显示面板的制备成本、提高制备效率,其中所述像素定义层的组成材料可以为具有疏水性的正型或负型光敏树脂材料;在所述像素定义层的开口区内形成发光层,所述发光层中可以通过喷墨打印制程制作;在所述发光层上形成阴极层。
其中,当所述显示面板为底发射类型时,所述阴极层可以做成反射率高的阴极,例如:所述阴极层的组成材料可以为不限于Al、Ag的金属材料;当所述显示面板为顶发射类型时,所述阴极层可以做成透明阴极以实现透光效果。
本发明的有益效果为:本发明提供了显示面板及其制作方法以及显示装置,该显示面板和显示装置与现有技术比较:阳极层和遮光层仅通过一个光罩制成、栅极层和栅极绝缘层仅通过一个光罩制成,并且通过设计上的改进也避免了钝化层、平坦层的制程。该方案通过优化显示面板的膜层结构,降低了显示面板的制作成本,提高了显示面板的制作效率以及良品率。
以上对本发明实施例所提供的显示面板以及包含所述显示面板的显示装置的结构以及制作显示面板的方法进行了详细介绍,本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。
Claims (18)
- 一种显示面板,其中,包括:基板;阳极层,所述阳极层设于所述基板上;遮光层,所述遮光层设于所述阳极层上;薄膜晶体管层,所述薄膜晶体管层设于所述遮光层上。
- 如权利要求1所述的显示面板,其中,所述薄膜晶体管层包括:有源层;栅极绝缘层,所述栅极绝缘层设于所述有源层上;栅极层,所述栅极层设于所述栅极绝缘层上;间绝缘层,所述间绝缘层设于所述栅极层以及所述有源层上;源漏极层,所述源漏极层设于所述间绝缘层上,所述源漏极层与所述有源层电性连接,所述源漏极层与所述遮光层电性连接,使得所述有源层与所述阳极层电性连接。
- 如权利要求2所述的显示面板,其中,所述显示面板还包括第一通孔,所述第一通孔设于所述间绝缘层上,所述第一通孔用于电性连接所述有源层和所述源漏极层。
- 如权利要求3所述的显示面板,其中,所述显示面板还包括:缓冲层,所述缓冲层设于所述遮光层与所述薄膜晶体管层之间,所述间绝缘层还设于所述缓冲层上;第二通孔,所述第二通孔设于所述间绝缘层和所述缓冲层上,所述第二通孔用于电性连接所述源漏极层和所述遮光层。
- 如权利要求2所述的显示面板,其中,所述栅极绝缘层和所述栅极层的宽度相等。
- 如权利要求1所述的显示面板,其中,所述显示面板还包括像素定义层,所述像素定义层设于所述间绝缘层以及所述源漏极层上。
- 如权利要求6所述的显示面板,其中,所述显示面板还包括发光层,所述发光层设置在所述像素定义层的开口区内。
- 如权利要求1所述的显示面板,其中,所述遮光层的组成材料为不透明的导电材料。
- 一种显示装置,其中,所述显示装置包括显示面板,所述显示面板包括:基板;阳极层,所述阳极层设于所述基板上;遮光层,所述遮光层设于所述阳极层上;薄膜晶体管层,所述薄膜晶体管层设于所述遮光层上。
- 如权利要求9所述的显示装置,其中,所述薄膜晶体管层包括:有源层;栅极绝缘层,所述栅极绝缘层设于所述有源层上;栅极层,所述栅极层设于所述栅极绝缘层上;间绝缘层,所述间绝缘层设于所述栅极层以及所述有源层上;源漏极层,所述源漏极层设于所述间绝缘层上,所述源漏极层与所述有源层电性连接,所述源漏极层与所述遮光层电性连接,使得所述有源层与所述阳极层电性连接。
- 如权利要求10所述的显示装置,其中,所述显示面板还包括第一通孔,所述第一通孔设于所述间绝缘层上,所述第一通孔用于电性连接所述有源层和所述源漏极层。
- 如权利要求11所述的显示装置,其中,所述显示面板还包括:缓冲层,所述缓冲层设于所述遮光层与所述薄膜晶体管层之间,所述间绝缘层还设于所述缓冲层上;第二通孔,所述第二通孔设于所述间绝缘层和所述缓冲层上,所述第二通孔用于电性连接所述源漏极层和所述遮光层。
- 如权利要求10所述的显示面板,其中,所述栅极绝缘层和所述栅极层的宽度相等。
- 如权利要求9所述的显示面板,其中,所述显示面板还包括像素定义层,所述像素定义层设于所述间绝缘层以及所述源漏极层上。
- 如权利要求14所述的显示面板,其中,所述显示面板还包括发光层,所述发光层设置在所述像素定义层的开口区内。
- 如权利要求9所述的显示面板,其中,所述遮光层的组成材料为不透明的导电材料。
- 一种显示面板的制作方法,其中,包括:提供一基板;在所述基板上形成阳极膜;在所述阳极膜上形成遮光膜;在所述遮光膜上形成光阻层;以所述光阻层为保护层,对所述遮光膜以及阳极膜进行刻蚀,形成阳极层以及遮光层;剥离所述光阻层;在所述遮光层上形成薄膜晶体管层。
- 如权利要求17所述的的制作方法,其中,在所述遮光层上形成薄膜晶体管层包括:在所述遮光层上形成有源层;在所述有源层上形成栅极绝缘膜;在所述栅极绝缘膜上形成栅极膜;在所述栅极膜上形成光阻层;以所述光阻层为保护层,对所述栅极膜进行刻蚀,形成栅极层;以所述光阻层和栅极层为保护层,对所述栅极绝缘膜进行刻蚀,形成栅极绝缘层;剥离所述光阻层;在所述栅极层上形成间绝缘层;在所述间绝缘层上形成源漏极层,得到所述薄膜晶体管层。
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