WO2020215620A1 - Panneau d'affichage à microdel - Google Patents

Panneau d'affichage à microdel Download PDF

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Publication number
WO2020215620A1
WO2020215620A1 PCT/CN2019/111132 CN2019111132W WO2020215620A1 WO 2020215620 A1 WO2020215620 A1 WO 2020215620A1 CN 2019111132 W CN2019111132 W CN 2019111132W WO 2020215620 A1 WO2020215620 A1 WO 2020215620A1
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WO
WIPO (PCT)
Prior art keywords
microled
layer
substrate
display panel
quantum dot
Prior art date
Application number
PCT/CN2019/111132
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English (en)
Chinese (zh)
Inventor
李佳育
樊勇
陈书志
柳铭岗
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020215620A1 publication Critical patent/WO2020215620A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a MicroLED display panel.
  • Micro light emitting diode usually refers to the traditional MicroLED chip structure, the size of the MicroLED chip is reduced to a size within 200 microns, and the red, green and blue three-color MicroLED are arranged in accordance with certain rules.
  • Thin Film Transistor (TFT) or Complementary Metal Oxide Semiconductor (Complementary Metal Oxide Semiconductor (COMS) has formed a micro device capable of realizing full-color display.
  • This type of display has independently controlled display pixels, has the characteristics of independent light-emitting control, high brightness, low power consumption, ultra-high resolution and ultra-high color saturation, and MicroLED microdisplay devices can also realize flexible and transparent display due to their self-luminous technical characteristics, and their power consumption is only about 10% of that of liquid crystal panels.
  • the traditional MicroLED chip combined with quantum dot fluorescent material solution adopts the black bank (black bank) on the MicroLED substrate, and then the black bank Quantum dots are placed in the groove formed by the bank, but because the black bank layer is made of organic material, the thicker the thickness, the easier it is to undercut, which affects the shape of the groove, and the quantum dot layer is approximately thinner, and the concentration of quantum dots The more severe the quenching, the lower the light conversion efficiency will be. Therefore, appropriately increasing the thickness of the quantum dot layer, improving the light efficiency, and maintaining the integrity of the groove shape has become a problem that needs to be solved at present.
  • the present disclosure provides a MicroLED display panel, which solves the technical problems that the black bank layer in the existing MicroLED display panel affects the integrity of the groove morphology structure, the concentration of quantum dots is severely quenched, and the light conversion efficiency is low.
  • the embodiments of the present disclosure provide a MicroLED display panel, including:
  • the driving circuit is arranged on the second substrate;
  • a MicroLED chip is disposed between the first substrate and the second substrate, and the MicroLED chip includes a MicroLED epitaxy;
  • the MicroLED quantum dot light-emitting array includes at least one groove, a non-groove area, and a quantum dot layer or scattering particles filled in the groove, wherein the grooves are arranged on the MicroLED epitaxy and arranged in an array ,
  • the shape of the groove is an inverted cone
  • the non-groove area is disposed on the MicroLED epitaxy between two adjacent grooves
  • the quantum dot layer includes a red quantum dot layer and a green quantum dot layer. Quantum dot layer.
  • the scattering particles are replaced with a blue quantum dot layer.
  • the MicroLED epitaxy includes a sapphire substrate, an n-type GaN layer, a multiple quantum well light-emitting layer, and a p-type GaN layer arranged and distributed in sequence.
  • the multiple quantum well light-emitting layer is a blue light-emitting layer or an ultraviolet light-emitting layer.
  • a metal reflective layer and an inert protective layer are sequentially arranged on the sidewall of the groove.
  • the second substrate is a printed circuit board or a thin film transistor glass substrate or a complementary metal oxide semiconductor substrate.
  • a second electrode is provided on the second substrate, and the second electrode is connected to a chip electrode provided on the MicroLED chip.
  • the embodiments of the present disclosure provide a MicroLED display panel, including:
  • the driving circuit is arranged on the second substrate;
  • a MicroLED chip is disposed between the first substrate and the second substrate, and the MicroLED chip includes a MicroLED epitaxy;
  • the MicroLED quantum dot light-emitting array includes at least one groove, a non-groove area, and a quantum dot layer or scattering particles filled in the groove, wherein the grooves are arranged on the MicroLED epitaxy and arranged in an array
  • the non-groove area is disposed on the MicroLED epitaxy between two adjacent grooves, and the quantum dot layer includes a red quantum dot layer and a green quantum dot layer.
  • the scattering particles are replaced with a blue quantum dot layer.
  • the MicroLED epitaxy includes a sapphire substrate, an n-type GaN layer, a multiple quantum well light-emitting layer, and a p-type GaN layer arranged and distributed in sequence.
  • the multiple quantum well light-emitting layer is a blue light-emitting layer or an ultraviolet light-emitting layer.
  • the thickness of the sapphire substrate is greater than 50 um.
  • the depth of the groove is 3-100 um.
  • a metal reflective layer and an inert protective layer are sequentially arranged on the sidewall of the groove.
  • the material of the metal reflective layer is metal such as silver or aluminum.
  • the inert protective layer may be a single-layer or multi-layer composite film such as polyurethane, epoxy resin, parylene and the like.
  • at least one black matrix is disposed on the first substrate, and the black matrix covers the non-groove area of the MicroLED quantum dot light-emitting array.
  • the second substrate is a printed circuit board or a thin film transistor glass substrate or a complementary metal oxide semiconductor substrate.
  • a second electrode is provided on the second substrate, and the second electrode is connected to a chip electrode provided on the MicroLED chip.
  • the MicroLED display panel provided by the present disclosure provides a groove on the sapphire substrate on the MicroLED chip, and then fills the groove with quantum dots, which effectively increases the thickness of the quantum dot layer and improves
  • the light effect can maintain the integrity of the groove morphology structure and the water and oxygen resistance ability of the quantum dots.
  • the groove depth is deeper and the quantum dot layer is thicker, which can effectively absorb the light emitted by the MicroLED, eliminating the color filter layer and saving costs.
  • FIG. 1 is a schematic diagram of the structure of a MicroLED display panel provided in the first embodiment of the disclosure
  • FIG. 2 is a schematic structural diagram of a MicroLED display panel provided in the second embodiment of the disclosure.
  • the disclosed embodiments can solve this defect.
  • the MicroLED display panel in the embodiment of the present disclosure is a MicroLED display panel.
  • the MicroLED display panel 1000 provided by the embodiment of the present disclosure includes:
  • the second substrate 12 is arranged opposite to the first substrate 11;
  • the MicroLED chip 10 is disposed between the first substrate 11 and the second substrate 12, and the MicroLED chip 10 includes a MicroLED epitaxy 101;
  • the MicroLED quantum dot light-emitting array 100 includes at least one groove 1011a, a non-groove area 1011b, and a quantum dot layer or scattering particles 19 filled in the groove 1011a, wherein the groove 1011a is disposed in the MicroLED cell
  • the non-groove area 1011b is arranged on the MicroLED epitaxy 101 between two adjacent grooves 1011a, and the quantum dot layer includes a red quantum dot layer 17 and a green Quantum dot layer 18.
  • the MicroLED epitaxy 101 includes a sapphire substrate 1011, an n-type GaN layer 1012, a multiple quantum well light-emitting layer 1013, a p-type GaN layer 1014, and an insulating layer 1015 arranged and distributed in sequence.
  • the multiple quantum well light-emitting layer 1013 is a blue light-emitting layer.
  • a plurality of grooves 1011a may be provided on the sapphire substrate 1011 on the MicroLED epitaxy 101.
  • only one groove may be provided on the MicroLED epitaxy 101.
  • the groove 1011a In order to achieve the luminous effect of multiple colors, each of the grooves 1011a may be filled with the quantum dot layer or the scattering particles 19, and the luminescence wavelength of the filled quantum dot layer may also be the same or different. Wherein, the three adjacent grooves are respectively filled with the red quantum dot layer 17, the green quantum dot layer 18, and the scattering particles 19, and the scattering particles 19 are transparent.
  • the groove 1011a and the red quantum dot layer 17, the green quantum dot layer 18, or the scattering particles 19 disposed in the groove 1011a form an RGB pixel unit. Since the multiple quantum well light-emitting layer 1013 on the MicroLED epitaxy 101 is a blue light-emitting layer, when the blue light emitted by the blue light-emitting layer passes through the red quantum dot layer 17, the red quantum dot layer 17 is excited to emit red light to form red pixels; when the blue light emitted by the blue light emitting layer passes through the green quantum dot layer 18, the green quantum dot layer 18 is excited to emit green light to form green pixels; When the blue light emitted by the blue light emitting layer passes through the scattering particles 19, the transparent particles 19 can directly transmit the blue light emitted by the blue light emitting layer to form blue pixels, thereby forming a composite of red, green and blue. Color image.
  • a metal reflective layer 15 is provided on the sidewall of the groove 1011a.
  • the material can be a metal such as silver or aluminum.
  • the light is reflected by the metal reflective layer 15 and is absorbed by the quantum dot layer or the scattering particles 19 in the groove 1011a again, preventing the light from entering adjacent In the groove 1011a, the color interference between pixels is caused, and the color difference is caused.
  • an inert protective layer (not shown in the figure) can be deposited on the metal reflective layer 15.
  • the inert protective layer can be a single-layer or multi-layer composite film such as polyurethane, epoxy resin, parylene, etc. , To block water and oxygen from the outside, to protect the metal reflective layer 15 and prevent the metal reflective layer 15 from oxidizing.
  • the first substrate 11 may be a glass substrate, and at least one black matrix 13 is provided on the first substrate 11, and the black matrix 13 is located on a side close to the MicroLED quantum dot light emitting array 100 and covers the MicroLED
  • the non-groove area 1011b of the quantum dot light-emitting array 100 prevents light leakage between pixels and can effectively improve the brightness in the dark state, thereby improving the contrast of the MicroLED display panel 1000.
  • the first substrate 11 can also block water and oxygen from entering the quantum dot layer, which can improve the reliability of the quantum dot layer, thereby ensuring the reliability of the MicroLED display panel 1000.
  • a flat layer 14 is provided under the black matrix 13 to flatten the MicroLED quantum dot light-emitting array 100.
  • the second substrate 12 is arranged opposite to the first substrate 11, and a driving circuit is provided on the second substrate 12.
  • the second substrate 12 may be a printed circuit board (Printed Circuit Board, PCB), a TFT glass substrate, or a CMOS substrate.
  • a TFT driving circuit is provided on the second substrate 12;
  • a CMOS driving circuit is provided on the second substrate 12 .
  • a second electrode is provided on the second substrate 12, the second electrode is connected to a chip electrode provided on the MicroLED chip, and the second electrode matches the first electrode.
  • the second electrode includes a second p electrode 121 and a second n electrode 122, the chip electrode includes a chip p electrode 102 and a chip n electrode 103, and the second p electrode 101 is connected to the chip p electrode 121, so The second n electrode 102 is connected to the chip n electrode 122.
  • a connecting layer 16 is provided on the second electrode of the second substrate 12, and the connecting layer 16 may be solder or anisotropic conductive adhesive (Anisotropic Conductive Film, ACF).
  • ACF anisotropic Conductive Film
  • the welding material needs to be selected from materials with a low melting point, and materials such as gold tin alloy, indium, and indium tin oxide can be selected.
  • the second electrode of the second substrate 12 and the chip electrode of the MicroLED chip 10 are connected through the solder layer or the ACF.
  • the multiple quantum well light-emitting layer 1013 emits blue light, excites the red quantum dot layer 17 and the green quantum dot layer 18, and then emits red light and green light respectively.
  • the thickness of the sapphire substrate 1011 is relatively thick, usually greater than 50 um, the depth of the groove 1011a formed by etching on the sapphire substrate 1011 can reach between 3 and 100 um, thereby greatly improving the The thickness of the quantum dot layer can effectively absorb the light emitted by the blue light-emitting layer.
  • the quantum dot layer in the embodiments of the present disclosure is thicker, the color filter layer can be omitted, which can save cost.
  • the shape of the groove 1011a can adopt an inverted cone structure.
  • the thickness of the quantum dot layer is greatly increased, which can not only maintain the integrity of the groove shape, but also Under the condition that the blue light is completely absorbed, the pixel pitch can be reduced, and the resolution of the MicroLED display panel 1000 can be improved.
  • the shape of the groove 1011a is not limited to an inverted cone structure, and other shapes can also be used, and this disclosure should not be limited thereto.
  • the MicroLED display panel 1000' provided by this embodiment is based on the first embodiment, replacing the blue light-emitting layer with an ultraviolet light-emitting layer, and simultaneously The scattering particles 19 are replaced with a blue quantum dot layer 20.
  • the MicroLED display panel 1000' includes:
  • the second substrate 12 is arranged opposite to the first substrate 11;
  • the MicroLED chip 10 is disposed between the first substrate 11 and the second substrate 12, and the MicroLED chip 10 includes a MicroLED epitaxy 101;
  • the MicroLED quantum dot light-emitting array 200 includes a groove 1011a, a non-groove area 1011b, and a quantum dot layer filled in the groove 1011a, wherein the groove 1011a is disposed on the MicroLED epitaxy 101 and forms an array Arrangement, the non-groove region 1011b is disposed on the MicroLED epitaxy 101 between two adjacent grooves 1011a, and the quantum dot layer includes a red quantum dot layer 17, a green quantum dot layer 18, and a blue quantum dot layer. Color quantum dot layer 20.
  • the MicroLED epitaxy 101 includes a sapphire substrate 1011, an n-type GaN layer 1012, a multiple quantum well light-emitting layer 1013, a p-type GaN layer 1014, and an insulating layer 1015 arranged and distributed in sequence.
  • the multiple quantum well light-emitting layer 1013' is an ultraviolet light-emitting layer.
  • a plurality of grooves 1011a can be provided on the sapphire substrate 1011 on the MicroLED epitaxy 101.
  • each of the grooves 1011a can be filled with a quantum dot layer.
  • the emission wavelengths of the quantum dot layers can also be the same or different.
  • three adjacent grooves 1011a are respectively filled with a red quantum dot layer 17, a green quantum dot layer 18, and a blue quantum dot layer 20, and three adjacent grooves 1011a and the same are arranged in the concave
  • the quantum dot layer in the groove 1011a constitutes an RGB pixel unit.
  • the multiple quantum well light-emitting layer 1013' on the MicroLED epitaxy is an ultraviolet light-emitting layer
  • the red quantum dot layer 17 is excited to emit red light to form red pixels
  • the green quantum dot layer 18 is excited to emit green light, A green pixel is formed
  • the blue quantum dot layer 20 can directly transmit the ultraviolet light emitted by the ultraviolet light emitting layer to form
  • the blue pixels form a color image composed of the three primary colors of red, green and blue.
  • the multi-quantum well light-emitting layer 1013' emits ultraviolet light, which excites the red quantum dot layer 17, the green quantum dot layer 18, and the blue quantum dot layer 20, respectively It emits red, green and blue light.
  • the solution of using quantum dots combined with color filters can be achieved.
  • the color gamut since the quantum dot layer in the embodiments of the present disclosure is thicker, the color filter layer can be omitted, which can save cost.
  • the shape of the groove 1011a can adopt an inverted cone structure. With a certain pixel pitch, the thickness of the quantum dot layer is greatly increased, which can not only maintain the integrity of the shape of the groove 1011a, but also Under the condition that the ultraviolet light is completely absorbed, the pixel pitch can be reduced, and the resolution of the MicroLED display panel 1000' can be improved.
  • the shape of the groove 1011a is not limited to an inverted cone structure, and other shapes can also be used, and this disclosure should not be limited thereto.
  • Either the blue light emitting layer in the first embodiment is combined with the red quantum dot layer, the green quantum dot layer and the scattering particles, or the ultraviolet light emitting layer in the second embodiment is combined with the red quantum dot layer, the green quantum dot layer and the blue quantum dot
  • the layer scheme can realize the colorization of the MicroLED display panel.
  • the display panel provided by the present disclosure is provided with grooves on the sapphire substrate on the MicroLED chip, and then the quantum dots are filled in the grooves, which effectively increases the thickness of the quantum dot layer and improves the light efficiency at the same time It can also maintain the integrity of the morphological structure of the groove where the quantum dots are placed and the water and oxygen resistance capabilities.
  • the sapphire is thicker, the groove depth is deeper and the quantum dot layer is thicker, which can effectively absorb the light emitted by the MicroLED, eliminating the color filter layer and saving costs.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne un panneau d'affichage à MicroDEL, comprenant un premier substrat, un second substrat, un circuit d'attaque, une puce à MicroDEL, et une matrice électroluminescente à points quantiques à MicroDEL. En fournissant des rainures sur la puce à MicroDEL, puis en remplissant les rainures avec des points quantiques, l'épaisseur de la couche de points quantiques est efficacement augmentée, l'intégrité de la structure sous la forme de rainures peut également être maintenue tout en améliorant l'efficacité lumineuse, et la lumière émise par la MicroDEL peut être efficacement absorbée, ce qui permet d'éliminer une couche de filtre coloré et de réduire les coûts.
PCT/CN2019/111132 2019-04-23 2019-10-15 Panneau d'affichage à microdel WO2020215620A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910330035.4A CN109979958A (zh) 2019-04-23 2019-04-23 MicroLED显示面板
CN201910330035.4 2019-04-23

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WO2020215620A1 true WO2020215620A1 (fr) 2020-10-29

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WO (1) WO2020215620A1 (fr)

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CN109979958A (zh) * 2019-04-23 2019-07-05 深圳市华星光电半导体显示技术有限公司 MicroLED显示面板
CN110350055B (zh) * 2019-07-25 2024-08-09 易美芯光（北京）科技有限公司 一种基于倒装结构的白光Micro LED结构
CN110783324B (zh) * 2019-09-19 2021-03-16 季华实验室 高密度Micro LED夹层结构有源驱动显示单元
CN110610957A (zh) * 2019-09-30 2019-12-24 云谷（固安）科技有限公司 显示面板、显示面板的制备方法和显示装置
CN110676285B (zh) * 2019-10-25 2024-05-17 佛山市国星半导体技术有限公司 一种多合一MicroLED芯片及其制作方法
CN110707121B (zh) * 2019-10-31 2022-02-01 深圳市华星光电半导体显示技术有限公司 显示面板
CN111584471B (zh) * 2020-05-12 2022-08-16 深圳雷曼光电科技股份有限公司 显示屏及其制造方法
CN111564121B (zh) * 2020-06-16 2022-04-12 京东方科技集团股份有限公司 一种显示面板、显示装置和显示面板的制作方法
CN111725251B (zh) * 2020-07-04 2023-04-21 深圳市惠合显示有限公司 高分辨率全彩化MicroLED显示器
CN111864092A (zh) * 2020-07-15 2020-10-30 武汉华星光电半导体显示技术有限公司 显示装置
CN114093986A (zh) * 2020-08-24 2022-02-25 北京芯海视界三维科技有限公司 光学材料填充方法及装置
CN112420901B (zh) * 2020-11-06 2022-02-01 深圳市华星光电半导体显示技术有限公司 微型发光二极管及显示面板
CN112578594A (zh) * 2020-11-27 2021-03-30 北海惠科光电技术有限公司 彩膜基板、显示面板及显示装置
CN112578597A (zh) * 2020-11-27 2021-03-30 北海惠科光电技术有限公司 彩膜基板、显示面板以及显示装置
CN112768590A (zh) * 2020-12-30 2021-05-07 深圳市华星光电半导体显示技术有限公司 一种显示面板的制备方法及显示面板
CN112782944A (zh) * 2021-01-27 2021-05-11 福州大学 一种基于RGBW的Micro-LED光刻工艺
CN113284918B (zh) * 2021-04-29 2024-01-26 无锡唐古半导体有限公司 微显示器件及其制备方法
CN113345921B (zh) * 2021-05-28 2022-09-27 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
CN114975507B (zh) * 2022-05-26 2023-06-23 重庆惠科金渝光电科技有限公司 阵列基板和显示面板
CN115407555A (zh) * 2022-08-17 2022-11-29 合肥合纵光电科技有限公司 一种柔性量子点直显装置

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