WO2020196179A1 - Film-forming device, film-forming method, and film-forming system - Google Patents

Film-forming device, film-forming method, and film-forming system Download PDF

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Publication number
WO2020196179A1
WO2020196179A1 PCT/JP2020/012073 JP2020012073W WO2020196179A1 WO 2020196179 A1 WO2020196179 A1 WO 2020196179A1 JP 2020012073 W JP2020012073 W JP 2020012073W WO 2020196179 A1 WO2020196179 A1 WO 2020196179A1
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WIPO (PCT)
Prior art keywords
supply
film forming
substrate
film
back surface
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PCT/JP2020/012073
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French (fr)
Japanese (ja)
Inventor
敦史 久保
博充 阪上
新藤　健弘
弘弥 似鳥
篤史 遠藤
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東京エレクトロン株式会社
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Publication of WO2020196179A1 publication Critical patent/WO2020196179A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • Various aspects and embodiments of the present disclosure relate to film forming equipment, film forming methods, and film forming systems.
  • the device is formed by forming a plurality of different materials on a substrate, etching the formed materials, and the like. Since the linear expansion coefficient differs between the substrate and the material formed on the substrate, when the substrate returns to room temperature after the film formation, stress may be generated on the substrate, and warpage or cracks may occur. Therefore, in order to reduce the stress applied to the substrate after the element is formed, there is known a technique of forming a film on the back surface of the surface on which the element is formed (see, for example, Patent Document 1 below).
  • the present disclosure provides a film forming apparatus, a film forming method, and a film forming system capable of reducing the man-hours required for film formation in order to reduce the warpage of the substrate.
  • One aspect of the present disclosure is a film forming apparatus, which includes a processing container, a support ring, a film forming section, and a control section.
  • the support ring supports the periphery of the substrate placed in the processing vessel.
  • the film forming section has a plurality of supply ports, and forms a film on the back surface of the substrate by supplying the material gas from each supply port toward the back surface of the surface of the substrate on which the element is formed.
  • the control unit independently controls the supply and stop of the supply of the material gas from each supply port.
  • FIG. 1 is a system configuration diagram showing an example of a semiconductor manufacturing system according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view showing an example of a second film forming apparatus according to the embodiment of the present disclosure.
  • FIG. 3 is a perspective view showing an example of the holding mechanism according to the embodiment of the present disclosure.
  • FIG. 4 is a perspective view showing an example of the film forming mechanism according to the embodiment of the present disclosure.
  • FIG. 5 is a partial cross-sectional view showing an example of the film-forming portion according to the embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram for explaining an example of gas flow in one embodiment of the present disclosure.
  • FIG. 7 is a diagram showing another example of the arrangement of the supply unit.
  • FIG. 1 is a system configuration diagram showing an example of a semiconductor manufacturing system according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view showing an example of a second film forming apparatus according to the embodiment of the present disclosure
  • FIG. 8 is a diagram showing another example of the film forming mechanism.
  • FIG. 9 is a cross-sectional view showing another example of the film-forming portion.
  • FIG. 10 is a diagram showing another example of the film forming mechanism.
  • FIG. 11 is a cross-sectional view showing another example of the film-forming portion.
  • FIG. 12 is a diagram showing another example of the holding mechanism.
  • FIG. 13 is a diagram showing another example of the film-forming portion.
  • FIG. 14 is a diagram showing another example in the moving direction of the film-forming portion.
  • the element is formed by etching the material formed on the substrate into various shapes. Therefore, the stress applied to the substrate after the element is formed has a complicated distribution on the substrate. As a result, the pattern of the film to be formed on the back surface of the substrate in order to cancel the stress having a complicated distribution becomes complicated.
  • a mask material is formed on the back surface of the substrate, and a pattern for canceling stress is formed on the formed mask by photolithography or the like. Then, a film having a shape corresponding to the mask pattern is formed on the back surface of the substrate.
  • a protective film for protecting the element on the surface of the substrate on which the element is formed or after the film formation on the back surface is completed.
  • a step of removing the protective film is also required. As described above, a plurality of steps are required to form a film having a predetermined pattern on the back surface. Therefore, the throughput in the manufacture of the semiconductor device using the substrate is lowered.
  • the present disclosure provides a technique capable of reducing the man-hours required for film formation in order to reduce the warpage of the substrate.
  • FIG. 1 is a system configuration diagram showing an example of the semiconductor manufacturing system 100 according to the embodiment of the present disclosure.
  • the semiconductor manufacturing system 100 includes a first film forming apparatus 200, an etching apparatus 300, a measuring apparatus 400, and a second film forming apparatus 500. These devices are connected to the four side walls of the vacuum transfer chamber 101 having a heptagonal planar shape via a gate valve G, respectively.
  • the semiconductor manufacturing system 100 is a multi-chamber type vacuum processing system, and the inside of the vacuum transfer chamber 101 is exhausted by a vacuum pump to maintain a predetermined degree of vacuum.
  • the semiconductor manufacturing system 100 is an example of a film forming system.
  • the first film forming apparatus 200 forms a conductive film, an insulating film, or the like on a substantially disk-shaped wafer W, which is an example of a substrate.
  • the etching apparatus 300 etches the conductive film or the like formed on the wafer W by the first film forming apparatus 200 into a predetermined pattern by dry etching or the like. By repeating the film formation by the first film forming apparatus 200 and the etching by the etching apparatus 300, an element used for the semiconductor apparatus is formed on the wafer W.
  • the measuring device 400 measures the height distribution of the wafer W on which the element is formed, and outputs the measurement result to the control device 110.
  • the height distribution of the wafer W can be measured using a measuring instrument such as a laser beam displacement meter.
  • a measuring instrument such as a laser beam displacement meter.
  • the wafer W on which the element is formed is mounted on a mounting table in the measuring device 400, and a laser beam displacement meter placed on the ceiling of the measuring device 400 horizontally above the wafer W on the mounting table. While moving, the surface of the wafer W on which the element is formed is irradiated with a laser beam.
  • the laser beam displacement meter can measure the height of the wafer W by measuring the reflected light reflected by the wafer W.
  • the measured height distribution corresponds to information indicating the distortion and warpage of the wafer W. That is, local distortion and warpage occur in the wafer W depending on the presence or absence of the film and the thick and thin portions of the film.
  • the control device 110 is a film forming pattern formed on the back surface of the surface of the wafer W on which the element is formed (hereinafter, simply referred to as the back surface) based on the measurement result measured by the measuring device 400, and is a wafer.
  • the film formation pattern for reducing the distortion and warpage generated in W is calculated.
  • the second film forming apparatus 500 forms a predetermined film on the back surface of the wafer W according to the film forming pattern calculated by the control device 110. As a result, the stress generated on the wafer W by the element formed on one surface of the wafer W is reduced, and the distortion and warpage of the wafer W are reduced.
  • Three load lock chambers 102 are connected to the other three side walls of the vacuum transfer chamber 101 via a gate valve G1.
  • An air transport chamber 103 is provided on the opposite side of the vacuum transport chamber 101 with the load lock chamber 102 in between.
  • Each of the three load lock chambers 102 is connected to the atmospheric transport chamber 103 via a gate valve G2.
  • the load lock chamber 102 controls the pressure between the atmospheric pressure and the vacuum when the wafer W is transported between the atmospheric transport chamber 103 and the vacuum transport chamber 101.
  • a transfer mechanism 106 such as a robot arm is provided in the vacuum transfer chamber 101.
  • the transport mechanism 106 transports the wafer W between the first film forming apparatus 200, the etching apparatus 300, the measuring apparatus 400, the second film forming apparatus 500, and the respective load lock chamber 102.
  • the transport mechanism 106 has two arms 107a and 107b that can move independently.
  • a transport mechanism 108 such as a robot arm is provided in the atmospheric transport chamber 103.
  • the transfer mechanism 108 transfers the wafer W between each carrier C, each load lock chamber 102, and an alignment chamber 104.
  • the semiconductor manufacturing system 100 includes a control device 110 having a memory, a processor, and an input / output interface.
  • the memory stores a program executed by the processor and a recipe including conditions for each process.
  • the processor executes a program read from the memory and controls each part of the semiconductor manufacturing system 100 via the input / output interface based on the recipe stored in the memory.
  • the control device 110 is an example of a control unit and a calculation device.
  • FIG. 2 is a schematic cross-sectional view showing an example of the second film forming apparatus 500 according to the embodiment of the present disclosure.
  • the second film forming apparatus 500 has a bottomed and tubular processing container 10 having a space formed inside. The upper part of the processing container 10 is closed by the lid 11. An opening 13 is provided on the side wall of the processing container 10, and the opening 13 is opened and closed by the gate valve G.
  • One end of the exhaust pipe 15 is connected to the bottom of the processing container 10.
  • the other end of the exhaust pipe 15 is connected to the exhaust device 17 via an APC (Automatic Pressure Controller) valve 16.
  • APC Automatic Pressure Controller
  • a holding mechanism 20 for holding the wafer W in the processing container 10 is provided in the processing container 10.
  • the holding mechanism 20 has a support ring 21, a plurality of support portions 22, and a plurality of drive portions 23. Further, the description will be continued with reference to FIG.
  • FIG. 3 is a perspective view showing an example of the holding mechanism 20 according to the embodiment of the present disclosure.
  • the support ring 21 has a substantially annular shape and supports the peripheral edge of the wafer W from below.
  • the central axis of the support ring 21 is defined as the axis X. Further, for example, as shown in FIG. 3, a part of the support ring 21 is cut so as not to interfere with the arm 107a.
  • Each support portion 22 is fixed to the support ring 21 and supports the support ring 21.
  • the holding mechanism 20 has three support portions 22.
  • Each drive unit 23 is arranged on the lid body 11 and moves the support unit 22 in the vertical direction.
  • the holding mechanism 20 has three support portions 22, and one drive portion 23 moves one support portion 22 in the vertical direction.
  • a plurality of support units 22 may be driven by one drive unit 23.
  • each drive unit 23 lowers the support unit 22. Then, the arm 107a on which the wafer W is placed so that the surface on which the element is formed faces upward enters the position on the support ring 21 so that the central axis of the wafer W and the axis X are aligned with each other. Then, each drive unit 23 raises the support unit 22, so that the wafer W is delivered to the support ring 21. Then, after the arm 107a is retracted from the processing container 10, each drive unit 23 lowers the support portion 22, so that the support ring 21 is lowered along the axis X and the wafer W reaches the position at the time of film formation. Descend.
  • a temperature control unit 12 for controlling the temperature of the wafer W held on the support ring 21 is provided.
  • the temperature control unit 12 is, for example, a heater, a lamp, or the like, and controls the temperature of the wafer W held on the support ring 21 by radiant heat to a temperature suitable for film formation.
  • a film forming mechanism 30 for forming a film according to the film forming pattern calculated by the control device 110 is arranged on the back surface of the wafer W.
  • the film forming mechanism 30 has a film forming section 31, a support section 32, and a driving section 33. Further, the description will be continued with reference to FIGS. 4 and 5.
  • FIG. 4 is a perspective view showing an example of the film forming mechanism 30 according to the embodiment of the present disclosure.
  • FIG. 5 is a partial cross-sectional view showing an example of the film forming portion 31 according to the embodiment of the present disclosure.
  • a plurality of supply units 310-1 to 310-n (n is an integer of 2 or more) are provided on the upper surface of the film forming unit 31.
  • the plurality of supply units 310-1 to 310-n are arranged side by side below the wafer W held by the support ring 21 along the radial direction of the wafer W, that is, the radial direction of the circle centered on the axis X. ing. Further, in the radial direction of the circle centered on the axis X, the length of the region where the plurality of supply units 310-1 to 310-n are arranged is longer than the radius of the wafer W.
  • the supply units 310-1 to 310-n will be referred to as the supply unit 310 when they are generically referred to without distinction.
  • Each supply unit 310 has a first supply port 311, an exhaust port 312, and a second supply port 313, for example, as shown in FIG.
  • the first supply port 311 supplies the first gas used for film formation to the back surface of the wafer W.
  • the exhaust port 312 sucks the gas supplied to the back surface of the wafer W.
  • the second supply port 313 supplies the second gas used for film formation to the back surface of the wafer W.
  • the first gas and the second gas are examples of material gases.
  • the exhaust port 312 is adjacent to the first supply port 311 and the second supply port 313. Further, the first supply port 311 is formed in the film forming portion 31 so as to surround the exhaust port 312.
  • Flow path 316 is formed.
  • One flow path 314 is connected to the first supply port 311 of one supply unit 310 via a supply hole 317.
  • the first gas supplied to the flow path 314 is supplied to the back surface of the wafer W from the first supply port 311 of the corresponding supply unit 310 through the corresponding supply hole 317.
  • one flow path 315 is connected to the exhaust port 312 of one supply unit 310 via the exhaust hole 318.
  • the gas sucked from the exhaust port 312 flows to the corresponding flow path 315 through the corresponding exhaust hole 318 and is exhausted.
  • one flow path 316 is connected to the second supply port 313 of one supply unit 310 via the supply hole 319.
  • the second gas supplied to the flow path 316 is supplied to the back surface of the wafer W from the second supply port 313 of the corresponding supply unit 310 through the corresponding supply hole 319.
  • the supply and suspension of gas supply from the supply unit 310 to the back surface of the wafer W, and the exhaust and exhaust stop of the gas supplied from the supply unit 310 to the back surface of the wafer W are independently controlled by the respective supply units 310.
  • a flow path 320 and a flow path 321 through which a heat medium such as Galden (registered trademark) flows are formed.
  • the temperature of the film forming unit 31 is controlled to a predetermined temperature by circulating the heat medium whose temperature is controlled by a temperature control device (not shown) in the flow path 320 and the flow path 321.
  • a temperature control device not shown
  • FIG. 6 is a schematic diagram for explaining an example of gas flow in one embodiment of the present disclosure.
  • the first gas supplied from the first supply port 311 and the second gas supplied from the second supply port 313 toward the back surface of the wafer W for example, as shown in FIG. Is supplied.
  • the first gas and the second gas supplied to the back surface of the wafer W diffuse along the back surface of the wafer W.
  • the first gas and the second gas are mixed on the back surface of the wafer W to form a predetermined film on the back surface of the wafer W.
  • the first gas and the second gas diffused along the back surface of the wafer W flow into the exhaust port 312 adjacent to the first supply port 311 and the second supply port 313. That is, in each of the supply units 310, the gas supplied from the first supply port 311 and the second supply port 313 to the back surface of the wafer W via the exhaust port 312 is the first supply port 311 and the second supply port 311 and the second. The gas is exhausted in the direction opposite to the direction in which the gas is supplied from the supply port 313 of the above. Therefore, for example, as shown in FIG. 6, a gas flow is generated from the first supply port 311 and the second supply port 313 to the exhaust port 312, and the leakage of gas outside the region of the supply unit 310 is suppressed. Will be done. Therefore, on the back surface of the wafer W, a film can be formed using the first gas and the second gas directly above the supply unit 310.
  • the support portion 32 supports the film forming portion 31.
  • the drive unit 33 rotates the support unit 32 around the shaft X.
  • the drive unit 33 is an example of a rotation mechanism.
  • the film forming portion 31 also rotates about the axis X, for example, as shown in FIG. As a result, the film forming portion 31 moves relatively in the processing container 10 with respect to the wafer W held on the support ring 21.
  • the first gas supply mechanism 50, the second gas supply mechanism 60, and the valve group 70 are connected to the film forming section 31.
  • the first gas supply mechanism 50 has a gas supply source 51, a plurality of MFCs (Mass Flow Controllers) 52-1 to 52-n, and a plurality of valves 53-1 to 53-n.
  • MFCs Mass Flow Controllers
  • valve 53 Describe.
  • One MFC 52 and one valve 53 are provided for one supply unit 310.
  • One end of each valve 53 is connected to a flow path 314 for supplying the first gas to the first supply port 311 of the corresponding supply unit 310 via a pipe.
  • the other end of each valve 53 is connected to the gas supply source 51, which is the first gas supply source, via the corresponding MFC 52.
  • Each MFC 52 controls the flow rate of the first gas supplied from the gas supply source 51, and supplies the flow-controlled first gas to the corresponding flow path 314 via the corresponding valve 53.
  • Each MFC 52 and valve 53 are controlled independently of each other by the control device 110.
  • the second gas supply mechanism 60 has a gas supply source 61, a plurality of MFCs 62-1 to 62-n, and a plurality of valves 63-1 to 63-n.
  • MFC62 a gas supply source
  • valve 63 a plurality of valves 63-1 to 63-n.
  • One MFC 62 and one valve 63 are provided for one supply unit 310.
  • One end of each valve 63 is connected to a flow path 316 for supplying the second gas to the second supply port 313 of the corresponding supply unit 310 via a pipe.
  • the other end of each valve 63 is connected to a gas supply source 61 which is a second gas supply source via a corresponding MFC 62.
  • Each MFC 62 controls the flow rate of the second gas supplied from the gas supply source 61, and supplies the flow-controlled second gas to the corresponding flow path 316 via the corresponding valve 63.
  • Each MFC 62 and valve 63 are controlled independently of each other by the control device 110.
  • the valve group 70 has a plurality of valves 71-1 to 71-n.
  • valves 71-1 to 71-n will be referred to as valves 71 when they are generically referred to without distinction.
  • One valve 71 is provided for one supply unit 310. One end of each valve 71 is connected to a flow path 315 through which the gas sucked from the exhaust port 312 of the corresponding supply unit 310 flows through a pipe. Further, the other end of each valve 71 is connected to the exhaust device 17. Each valve 71 is controlled independently of each other by the control device 110.
  • the gas supply and exhaust to the back surface of the wafer W are individually supplied to the back surface of the wafer W while rotating the film forming section 31 around the axis X. Be controlled.
  • a film having a film formation pattern calculated by the control device 110 is formed on the back surface of the wafer W held on the support ring 21.
  • the lid 11 is formed with a gas introduction port 14 for supplying purge gas into the processing container 10.
  • a purge gas supply mechanism 40 is connected to the gas introduction port 14 via a pipe.
  • the purge gas supply mechanism 40 has a gas supply source 41, an MFC 42, and a valve 43.
  • One end of the valve 43 is connected to the gas introduction port 14 via a pipe.
  • the other end of the valve 43 is connected to the gas supply source 41, which is a supply source of purge gas, via the MFC 42.
  • the purge gas is an inert gas such as helium gas, argon gas, or nitrogen gas.
  • the MFC 42 controls the flow rate of the purge gas supplied from the gas supply source 41 at the time of film formation on the back surface of the wafer W, and the flow-controlled purge gas is supplied into the processing container 10 via the valve 43 and the gas introduction port 14. Supply to.
  • the gas introduction port 14 supplies purge gas to the surface of the wafer W on which the element is formed while the wafer W is supported by the support ring 21.
  • the gas introduction port 14 is an example of a second purge gas supply port.
  • the semiconductor manufacturing system 100 in this embodiment includes a measuring device 400, a control device 110, and a second film forming device 500.
  • the measuring device 400 measures the height distribution of the wafer W.
  • the control device 110 calculates a film formation pattern for reducing the stress applied to the wafer W from the height distribution measured by the measuring device 400.
  • the second film forming apparatus 500 forms a film on the back surface of the surface of the wafer W on which the element is formed according to the film forming pattern calculated by the control device 110.
  • the second film forming apparatus 500 includes a processing container 10, a support ring 21, and a film forming section 31.
  • the support ring 21 supports the peripheral edge of the wafer W arranged in the processing container 10.
  • the film forming unit 31 has a plurality of supply units 310, and forms a film on the back surface of the wafer W by supplying the material gas from each supply unit 310 toward the back surface of the wafer W.
  • the control device 110 independently controls the supply and stop of the supply of the material gas from each supply unit 310. As a result, the man-hours required for film formation for reducing the warpage of the wafer W can be reduced.
  • the film forming unit 31 moves relative to the wafer W in the processing container 10. As a result, a film having an arbitrary pattern can be efficiently formed on the back surface of the wafer W.
  • the wafer W has a substantially disk shape, and the plurality of supply units 310 are arranged below the back surface of the wafer W in the radial direction of the wafer W.
  • the second film forming apparatus 500 includes a driving unit 33 that supports the film forming section 31 and rotates the film forming section 31 around the central axis of the wafer W. As a result, a film having an arbitrary pattern can be efficiently formed on the back surface of the wafer W.
  • each supply unit 310 has a first supply port 311 for supplying the material gas to the back surface of the wafer W, and an exhaust port 312 adjacent to the first supply port 311.
  • the material gas supplied from the first supply port 311 to the back surface of the wafer W is made of material from the first supply port 311 via the exhaust port 312 adjacent to the first supply port 311.
  • the gas is exhausted in the direction opposite to the direction in which the gas is supplied.
  • the material gas supplied from each supply unit 310 is suppressed from entering the region of the other supply unit 310.
  • a film can be formed on the back surface of the wafer W for each region of the supply unit 310.
  • the first supply port 311 is formed in the film forming unit 31 so as to surround the exhaust port 312 adjacent to the first supply port 311.
  • the material gas supplied from each supply unit 310 is suppressed from entering the region of the other supply unit 310.
  • a film can be formed on the back surface of the wafer W for each region of the supply unit 310.
  • the purge gas supply mechanism 40 for supplying the purge gas to the surface of the wafer W on which the element is formed is provided in a state where the wafer W is supported by the support ring 21.
  • the purge gas supply mechanism 40 for supplying the purge gas to the surface of the wafer W on which the element is formed is provided in a state where the wafer W is supported by the support ring 21.
  • the film forming portion 31 is formed with a flow path 320 and a flow path 321 through which a temperature-controlled heat medium flows.
  • a temperature-controlled heat medium flows in the flow path 320 and the flow path 321, it is possible to suppress the deposition of the depot on the film forming portion 31.
  • the plurality of supply units 310 are arranged side by side in a row along the radial direction of the circle centered on the axis X, for example, as shown in FIG.
  • the disclosed technique is not limited to this, and if they are arranged at different positions in the radial direction of the circle centered on the axis X, they may not be arranged side by side in a row.
  • the plurality of supply units 310 may be arranged at positions different from each other by the width L1 of the respective supply units 310 in the radial direction r of the circle centered on the axis X.
  • FIG. 7 is a diagram showing another example of the arrangement of the supply unit 310.
  • each supply unit 310 is arranged at a different position in the radial direction of the circle centered on the axis X, and the total length of the width L1 of each supply unit 310 is a plurality of lengths. It has the same length as the length L2 of the region where the supply unit 310 is arranged.
  • the length L2 may be, for example, the same length as the radius of the wafer W.
  • the plurality of supply portions 310 can be densely arranged in the radial direction of the circle centered on the axis X, and a film formation pattern having a finer shape can be formed on the back surface of the wafer W.
  • the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in a row from the axis X in the radial direction of the circle centered on the axis X. Is not limited to this.
  • the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in the radial direction of the circle centered on the axis X from the axis X, for example, as shown in FIG. 8, a plurality of directions It may be arranged side by side in. As a result, the time required to form the film formation pattern on the back surface of the wafer W can be shortened.
  • FIG. 8 is a diagram showing another example of the film forming mechanism 30.
  • the plurality of supply units 310 may be arranged in the film forming unit 31 so as to be arranged in the diameter direction of the circle centered on the axis X.
  • the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in the radial direction of the circle centered on the axis X and in the direction intersecting each other. You may be.
  • the plurality of supply units 310 are arranged so as to be arranged in two directions from the axis X, and in the example of FIG.
  • the plurality of supply units 310 are arranged from the axis X. They are arranged so as to line up in four directions.
  • the plurality of supply units 310 may be arranged so as to be arranged in three directions from the axis X, or may be arranged so as to be arranged in five or more directions from the axis X.
  • a film having a predetermined pattern is formed on the back surface of the wafer W by supplying the material gas to the back surface of the wafer W, but the disclosed technique is not limited to this.
  • the second gas may be turned into plasma, and a film having a predetermined pattern may be formed on the back surface of the wafer W using the active species contained in the plasma.
  • FIG. 9 is a cross-sectional view showing another example of the film forming portion 31.
  • the electrode 3131 and the electrode 3132 are provided on the inner side wall of the second supply port 313 with the insulating member 3130 interposed therebetween.
  • the electrode 3131 and the electrode 3132 are formed in a plate shape and are arranged on the inner side wall of the second supply port 313 so as to face each other.
  • a high frequency power supply 3133 is electrically connected to the electrode 3131, and the electrode 3132 is grounded.
  • the electrode 3131, the electrode 3132, and the high-frequency power supply 3133 are examples of the plasma generation unit.
  • the film forming section 31 may be provided with a purge gas supply port 330 so as to surround the plurality of supply sections 310, for example, as shown in FIGS. 10 and 11.
  • FIG. 10 is a diagram showing another example of the film forming mechanism 30.
  • FIG. 11 is a cross-sectional view showing another example of the film forming portion 31.
  • the supply port 330 is connected to the flow path 332 through which the purge gas flows through the supply hole 331, for example, as shown in FIG.
  • the purge gas is an inert gas such as helium gas, argon gas, or nitrogen gas.
  • the purge gas supplied into the flow path 332 from a gas supply mechanism (not shown) is supplied to the back surface of the wafer W from the supply port 330 through the supply hole 331.
  • the purge gas supplied to the back surface of the wafer W diffuses along the back surface of the wafer W and is exhausted through the exhaust port 312.
  • the supply port 330 supplies purge gas in the same direction in which gas is supplied from each supply unit 310.
  • the supply port 330 is an example of the first purge gas supply port.
  • a purge gas supply port 330 may be provided so as to surround the plurality of supply sections 310.
  • the film forming section 31 moves with respect to the wafer W, but if the film forming section 31 moves relative to the wafer W in the processing container 10, for example, FIG. 12 shows.
  • the wafer W may be moved so as to be used.
  • FIG. 12 is a diagram showing another example of the holding mechanism 20.
  • the holding mechanism 20 has a support ring 21, a plurality of support portions 26, a pedestal 27, and a drive portion 28.
  • the support ring 21 is fixed to a plurality of support portions 26 and is supported by the plurality of support portions 26.
  • Each support portion 26 is fixed to a pedestal 27.
  • the drive unit 28 rotates the pedestal 27 about the axis X. As the pedestal 27 rotates about the axis X, the wafer W held on the support ring 21 rotates about the axis X together with the support ring 21 supported by the support portion 26.
  • the drive unit 28 is an example of a rotation mechanism. In the example of FIG. 12, the film forming portion 31 does not rotate.
  • the wafer W rotates relative to the film forming section 31, and each of the supply sections 310 of the film forming section 31 can form a film at an arbitrary position on the back surface of the wafer W. Both the wafer W and the film forming portion 31 may rotate in opposite directions.
  • the film forming portion 31 moves relative to the wafer W, but if the film forming can be performed at an arbitrary position on the back surface of the wafer W, the film forming portion is formed with respect to the wafer W. 31 does not have to move relatively.
  • the film forming portion 31 is configured as shown in FIG. 13, for example.
  • FIG. 13 is a diagram showing another example of the film forming portion 31.
  • a plurality of surfaces of the film forming portion 31 facing the back surface of the wafer W which are the same size as the region of the back surface of the wafer W or wider than the region of the back surface of the wafer W.
  • the supply units 310 are densely arranged. By controlling the supply of the material gas from each supply unit 310, the film can be formed at an arbitrary position on the back surface of the wafer W.
  • the film forming portion 31 moves in the direction of rotation relative to the wafer W to form a film at an arbitrary position on the back surface of the wafer W. Not limited to. If the film forming section 31 moves relative to the wafer W, the film forming section 31 may move in another direction with respect to the wafer W.
  • FIG. 14 is a diagram showing another example in the moving direction of the film forming portion 31.
  • the film-forming portion 31 may be moved along the back surface of the wafer W in a direction intersecting the longitudinal direction of the film-forming portion 31.
  • the length of the region of the film forming section 31 in which the plurality of supply sections 310 are arranged is the same as the diameter of the wafer W, or the length of the wafer W. Longer than the diameter.
  • the measuring device 400 measures the height distribution of the wafer W after the element is formed, and the control device 110 calculates the film formation pattern based on the measurement result.
  • Technology is not limited to this. For example, when an element is formed on the wafer W so that the height distribution of the wafer W becomes a preset distribution, the height distribution of the wafer W after the element is formed is measured. It does not have to be. In this case, a film formation pattern corresponding to the preset height distribution is formed on the back surface of the wafer W without measuring the height distribution.
  • a predetermined film formation pattern is formed on the back surface of the wafer W after the element is formed, but the disclosed technique is not limited to this.
  • the height is set in advance before the element is formed on the wafer W.
  • a film forming pattern corresponding to the distribution of the above may be formed on the back surface of the wafer W.
  • the exhaust port 312 is arranged around the second supply port 313 so as to surround the second supply port 313, and around the exhaust port 312 so as to surround the exhaust port 312.
  • the first supply port 311 is arranged in, but the disclosed technology is not limited to this.
  • the first supply port 311 and the exhaust port 312, and the second supply port 313 are formed in a straight line, and the first supply port 311 and the second supply port 313 are laterally sandwiched by the exhaust port 312. They may be arranged side by side.
  • the temperature of the wafer W held on the support ring 21 is controlled by the temperature control unit 12 such as a heater or a lamp arranged on the lower surface of the lid 11, but the disclosed technique is described. Not limited to this.
  • the processing container 10 and the lid 11 are made of quartz or the like, and the processing container 10 and the lid 11 are outside the processing container 10 and the lid 11.
  • a temperature control mechanism for controlling the temperature of the lid may be provided.
  • the processing container 10 and the lid 11 are controlled to predetermined temperatures by the temperature control mechanism, and the temperature of the wafer W held on the support ring 21 is adjusted by the radiant heat from the processing container 10 and the lid 11. Since the radiant heat is applied to the wafer W not only from above the wafer W held on the support ring 21 but also from the surroundings, the temperature of the wafer W can be kept more uniform.

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Abstract

This film-forming device is provided with a processing container, a support ring, a film-forming unit, and a control unit. The support ring supports the peripheral edge of a substrate disposed on the processing container. The film-forming unit has a plurality of supply ports. The film forming unit supplies a material gas from the supply ports to the reverse surface of the substrate in relation to the surface on which an element is formed, and thereby forms a film on the reverse surface of the substrate. The control unit independently controls the supplying of the material gas, and the stopping of the supplying of the material gas, from each of the supply ports.

Description

成膜装置、成膜方法、および成膜システムFilm formation equipment, film formation method, and film formation system
　本開示の種々の側面および実施形態は、成膜装置、成膜方法、および成膜システムに関する。 Various aspects and embodiments of the present disclosure relate to film forming equipment, film forming methods, and film forming systems.
　半導体デバイスの製造過程では、基板上に様々な素子が形成される。素子は、複数の異なる材料を基板上に成膜したり、成膜された材料をエッチングする等によって形成される。基板とその上に成膜される材料とは、線膨張係数が異なるため、成膜後に基板が室温に戻ると、基板に応力が発生し、反りやクラックが発生する場合がある。そこで、素子形成後の基板に加わる応力を低減するために、素子が形成された面の裏面に成膜を行う技術が知られている（例えば、下記特許文献１参照）。 In the process of manufacturing semiconductor devices, various elements are formed on the substrate. The device is formed by forming a plurality of different materials on a substrate, etching the formed materials, and the like. Since the linear expansion coefficient differs between the substrate and the material formed on the substrate, when the substrate returns to room temperature after the film formation, stress may be generated on the substrate, and warpage or cracks may occur. Therefore, in order to reduce the stress applied to the substrate after the element is formed, there is known a technique of forming a film on the back surface of the surface on which the element is formed (see, for example, Patent Document 1 below).
米国特許出願公開第２０１５／０３４０２２５号明細書U.S. Patent Application Publication No. 2015/0340225
　本開示は、基板の反り等を低減するための成膜に要する工数を削減することができる成膜装置、成膜方法、および成膜システムを提供する。 The present disclosure provides a film forming apparatus, a film forming method, and a film forming system capable of reducing the man-hours required for film formation in order to reduce the warpage of the substrate.
　本開示の一側面は、成膜装置であって、処理容器と、支持リングと、成膜部と、制御部とを備える。支持リングは、処理容器内に配置された基板の周縁を支持する。成膜部は、複数の供給口を有し、素子が形成される基板の面の裏面に向かってそれぞれの供給口から材料ガスを供給することにより、基板の裏面に成膜を行う。制御部は、それぞれの供給口からの材料ガスの供給および供給停止を独立に制御する。 One aspect of the present disclosure is a film forming apparatus, which includes a processing container, a support ring, a film forming section, and a control section. The support ring supports the periphery of the substrate placed in the processing vessel. The film forming section has a plurality of supply ports, and forms a film on the back surface of the substrate by supplying the material gas from each supply port toward the back surface of the surface of the substrate on which the element is formed. The control unit independently controls the supply and stop of the supply of the material gas from each supply port.
　本開示の種々の側面および実施形態によれば、基板の反り等を低減するための成膜に要する工数を削減することができる。 According to various aspects and embodiments of the present disclosure, it is possible to reduce the man-hours required for film formation to reduce the warpage of the substrate.
図１は、本開示の一実施形態における半導体製造システムの一例を示すシステム構成図である。FIG. 1 is a system configuration diagram showing an example of a semiconductor manufacturing system according to an embodiment of the present disclosure. 図２は、本開示の一実施形態における第２の成膜装置の一例を示す概略断面図である。FIG. 2 is a schematic cross-sectional view showing an example of a second film forming apparatus according to the embodiment of the present disclosure. 図３は、本開示の一実施形態における保持機構の一例を示す斜視図である。FIG. 3 is a perspective view showing an example of the holding mechanism according to the embodiment of the present disclosure. 図４は、本開示の一実施形態における成膜機構の一例を示す斜視図である。FIG. 4 is a perspective view showing an example of the film forming mechanism according to the embodiment of the present disclosure. 図５は、本開示の一実施形態における成膜部の一例を示す部分断面図である。FIG. 5 is a partial cross-sectional view showing an example of the film-forming portion according to the embodiment of the present disclosure. 図６は、本開示の一実施形態におけるガスの流れの一例を説明するための模式図である。FIG. 6 is a schematic diagram for explaining an example of gas flow in one embodiment of the present disclosure. 図７は、供給部の配置の他の例を示す図である。FIG. 7 is a diagram showing another example of the arrangement of the supply unit. 図８は、成膜機構の他の例を示す図である。FIG. 8 is a diagram showing another example of the film forming mechanism. 図９は、成膜部の他の例を示す断面図である。FIG. 9 is a cross-sectional view showing another example of the film-forming portion. 図１０は、成膜機構の他の例を示す図である。FIG. 10 is a diagram showing another example of the film forming mechanism. 図１１は、成膜部の他の例を示す断面図である。FIG. 11 is a cross-sectional view showing another example of the film-forming portion. 図１２は、保持機構の他の例を示す図である。FIG. 12 is a diagram showing another example of the holding mechanism. 図１３は、成膜部の他の例を示す図である。FIG. 13 is a diagram showing another example of the film-forming portion. 図１４は、成膜部の移動方向の他の例を示す図である。FIG. 14 is a diagram showing another example in the moving direction of the film-forming portion.
　以下に、開示される成膜装置、成膜方法、および成膜システムの実施形態について、図面に基づいて詳細に説明する。なお、以下の実施形態により、開示される成膜装置、成膜方法、および成膜システムが限定されるものではない。 The disclosed film forming apparatus, film forming method, and embodiment of the film forming system will be described in detail below with reference to the drawings. It should be noted that the following embodiments do not limit the disclosed film forming apparatus, film forming method, and film forming system.
　ところで、素子は、基板に成膜された材料が様々な形状にエッチングされることにより形成される。そのため、素子が形成された後の基板に加わる応力は、基板上で複雑な分布となる。これにより、複雑な分布となった応力をキャンセルするために基板の裏面に成膜すべき膜のパターンも複雑になる。 By the way, the element is formed by etching the material formed on the substrate into various shapes. Therefore, the stress applied to the substrate after the element is formed has a complicated distribution on the substrate. As a result, the pattern of the film to be formed on the back surface of the substrate in order to cancel the stress having a complicated distribution becomes complicated.
　基板の裏面に複雑なパターンの膜を形成する場合、例えば、基板の裏面にマスク材料が成膜され、フォトリソグラフィ等により、成膜されたマスクに応力をキャンセルするためのパターンが形成される。そして、基板の裏面にマスクパターンに応じた形状の膜が成膜される。 When forming a film having a complicated pattern on the back surface of a substrate, for example, a mask material is formed on the back surface of the substrate, and a pattern for canceling stress is formed on the formed mask by photolithography or the like. Then, a film having a shape corresponding to the mask pattern is formed on the back surface of the substrate.
　また、基板上に形成された素子の損傷や変質を防ぐために、素子を保護するための保護膜を素子が形成された基板の面に積層させる工程や、裏面への成膜が終了した後に、保護膜を除去する工程も必要となる。このように、裏面に所定のパターンの膜を成膜するために複数の工程が必要となる。そのため、基板を用いた半導体装置の製造におけるスループットが低下する。 Further, in order to prevent damage or deterioration of the element formed on the substrate, after the step of laminating a protective film for protecting the element on the surface of the substrate on which the element is formed or after the film formation on the back surface is completed. A step of removing the protective film is also required. As described above, a plurality of steps are required to form a film having a predetermined pattern on the back surface. Therefore, the throughput in the manufacture of the semiconductor device using the substrate is lowered.
　そこで、本開示は、基板の反り等を低減するための成膜に要する工数を削減することができる技術を提供する。 Therefore, the present disclosure provides a technique capable of reducing the man-hours required for film formation in order to reduce the warpage of the substrate.
［半導体製造システム］
　図１は、本開示の一実施形態における半導体製造システム１００の一例を示すシステム構成図である。半導体製造システム１００は、第１の成膜装置２００、エッチング装置３００、測定装置４００、および第２の成膜装置５００を有する。これらの装置は、平面形状が七角形をなす真空搬送室１０１の４つの側壁にそれぞれゲートバルブＧを介して接続されている。半導体製造システム１００は、マルチチャンバータイプの真空処理システムであり、真空搬送室１０１内は、真空ポンプにより排気されて所定の真空度に保たれている。半導体製造システム１００は、成膜システムの一例である。 [Semiconductor manufacturing system]
FIG. 1 is a system configuration diagram showing an example of the semiconductor manufacturing system 100 according to the embodiment of the present disclosure. The semiconductor manufacturing system 100 includes a first film forming apparatus 200, an etching apparatus 300, a measuring apparatus 400, and a second film forming apparatus 500. These devices are connected to the four side walls of the vacuum transfer chamber 101 having a heptagonal planar shape via a gate valve G, respectively. The semiconductor manufacturing system 100 is a multi-chamber type vacuum processing system, and the inside of the vacuum transfer chamber 101 is exhausted by a vacuum pump to maintain a predetermined degree of vacuum. The semiconductor manufacturing system 100 is an example of a film forming system.
　第１の成膜装置２００は、基板の一例である略円板状のウエハＷ上に導電膜や絶縁膜等を成膜する。エッチング装置３００は、第１の成膜装置２００によってウエハＷ上に成膜された導電膜等を、ドライエッチング等により所定パターンにエッチングする。第１の成膜装置２００による成膜と、エッチング装置３００によるエッチングとが繰り返されることにより、ウエハＷ上に半導体装置に用いられる素子が形成される。 The first film forming apparatus 200 forms a conductive film, an insulating film, or the like on a substantially disk-shaped wafer W, which is an example of a substrate. The etching apparatus 300 etches the conductive film or the like formed on the wafer W by the first film forming apparatus 200 into a predetermined pattern by dry etching or the like. By repeating the film formation by the first film forming apparatus 200 and the etching by the etching apparatus 300, an element used for the semiconductor apparatus is formed on the wafer W.
　測定装置４００は、素子が形成されたウエハＷの高さの分布を測定し、測定結果を制御装置１１０へ出力する。ウエハＷの高さの分布は、例えばレーザ光変位計等の測定器を用いて測定することができる。例えば、素子が形成されたウエハＷが測定装置４００内の載置台に載置され、測定装置４００の天井部に配置されたレーザ光変位計が、載置台上のウエハＷの上方を水平方向に移動しながら、素子が形成されたウエハＷの面にレーザ光を照射する。 The measuring device 400 measures the height distribution of the wafer W on which the element is formed, and outputs the measurement result to the control device 110. The height distribution of the wafer W can be measured using a measuring instrument such as a laser beam displacement meter. For example, the wafer W on which the element is formed is mounted on a mounting table in the measuring device 400, and a laser beam displacement meter placed on the ceiling of the measuring device 400 horizontally above the wafer W on the mounting table. While moving, the surface of the wafer W on which the element is formed is irradiated with a laser beam.
　レーザ光変位計は、ウエハＷによって反射された反射光を測定することにより、ウエハＷの高さを測定することができる。測定された高さの分布は、ウエハＷの歪みや反りを示す情報に対応する。つまり、膜の有無や膜の厚い部分と薄い部分とによりウエハＷに局所的な歪や反りが生じる。 The laser beam displacement meter can measure the height of the wafer W by measuring the reflected light reflected by the wafer W. The measured height distribution corresponds to information indicating the distortion and warpage of the wafer W. That is, local distortion and warpage occur in the wafer W depending on the presence or absence of the film and the thick and thin portions of the film.
　制御装置１１０は、測定装置４００によって測定された測定結果に基づいて、素子が形成されたウエハＷの面の裏面（以下、単に裏面と記載する）に形成される成膜パターンであって、ウエハＷに生じている歪みや反りを低減するための成膜パターンを算出する。 The control device 110 is a film forming pattern formed on the back surface of the surface of the wafer W on which the element is formed (hereinafter, simply referred to as the back surface) based on the measurement result measured by the measuring device 400, and is a wafer. The film formation pattern for reducing the distortion and warpage generated in W is calculated.
　第２の成膜装置５００は、制御装置１１０によって算出された成膜パターンに従って、ウエハＷの裏面に、所定の膜を成膜する。これにより、ウエハＷの一方の面に形成された素子によってウエハＷに生じた応力が低減され、ウエハＷの歪みや反りが低減される。 The second film forming apparatus 500 forms a predetermined film on the back surface of the wafer W according to the film forming pattern calculated by the control device 110. As a result, the stress generated on the wafer W by the element formed on one surface of the wafer W is reduced, and the distortion and warpage of the wafer W are reduced.
　真空搬送室１０１の他の３つの側壁には、３つのロードロック室１０２がゲートバルブＧ１を介して接続されている。ロードロック室１０２を挟んで真空搬送室１０１の反対側には、大気搬送室１０３が設けられている。３つのロードロック室１０２のそれぞれは、ゲートバルブＧ２を介して大気搬送室１０３に接続されている。ロードロック室１０２は、大気搬送室１０３と真空搬送室１０１との間でウエハＷを搬送する際に、大気圧と真空との間で圧力制御を行う。 Three load lock chambers 102 are connected to the other three side walls of the vacuum transfer chamber 101 via a gate valve G1. An air transport chamber 103 is provided on the opposite side of the vacuum transport chamber 101 with the load lock chamber 102 in between. Each of the three load lock chambers 102 is connected to the atmospheric transport chamber 103 via a gate valve G2. The load lock chamber 102 controls the pressure between the atmospheric pressure and the vacuum when the wafer W is transported between the atmospheric transport chamber 103 and the vacuum transport chamber 101.
　大気搬送室１０３のゲートバルブＧ２が設けられた側面とは反対側の側面には、ウエハＷを収容するキャリア（ＦＯＵＰ（Front-Opening　Unified　Pod）等）Ｃを取り付けるための３つのポート１０５が設けられている。また、大気搬送室１０３の側壁には、ウエハＷのアライメントを行うためのアライメント室１０４が設けられている。大気搬送室１０３内には清浄空気のダウンフローが形成される。 On the side surface of the air transport chamber 103 opposite to the side surface on which the gate valve G2 is provided, three ports 105 for attaching a carrier (FOUP (Front-Opening Unified Pod), etc.) C for accommodating the wafer W are provided. Has been done. Further, an alignment chamber 104 for aligning the wafer W is provided on the side wall of the air transport chamber 103. A downflow of clean air is formed in the air transport chamber 103.
　真空搬送室１０１内には、ロボットアーム等の搬送機構１０６が設けられている。搬送機構１０６は、第１の成膜装置２００、エッチング装置３００、測定装置４００、第２の成膜装置５００、およびそれぞれのロードロック室１０２の間でウエハＷを搬送する。搬送機構１０６は、独立に移動可能な２つのアーム１０７ａおよび１０７ｂを有する。 A transfer mechanism 106 such as a robot arm is provided in the vacuum transfer chamber 101. The transport mechanism 106 transports the wafer W between the first film forming apparatus 200, the etching apparatus 300, the measuring apparatus 400, the second film forming apparatus 500, and the respective load lock chamber 102. The transport mechanism 106 has two arms 107a and 107b that can move independently.
　大気搬送室１０３内には、ロボットアーム等の搬送機構１０８が設けられている。搬送機構１０８は、それぞれのキャリアＣ、それぞれのロードロック室１０２、およびアライメント室１０４の間でウエハＷを搬送する。 A transport mechanism 108 such as a robot arm is provided in the atmospheric transport chamber 103. The transfer mechanism 108 transfers the wafer W between each carrier C, each load lock chamber 102, and an alignment chamber 104.
　半導体製造システム１００は、メモリ、プロセッサ、および入出力インターフェイスを有する制御装置１１０を有する。メモリには、プロセッサによって実行されるプログラム、および、各処理の条件等を含むレシピが格納されている。プロセッサは、メモリから読み出したプログラムを実行し、メモリ内に記憶されたレシピに基づいて、入出力インターフェイスを介して、半導体製造システム１００の各部を制御する。制御装置１１０は、制御部および算出装置の一例である。 The semiconductor manufacturing system 100 includes a control device 110 having a memory, a processor, and an input / output interface. The memory stores a program executed by the processor and a recipe including conditions for each process. The processor executes a program read from the memory and controls each part of the semiconductor manufacturing system 100 via the input / output interface based on the recipe stored in the memory. The control device 110 is an example of a control unit and a calculation device.
［第２の成膜装置５００の詳細］
　図２は、本開示の一実施形態における第２の成膜装置５００の一例を示す概略断面図である。第２の成膜装置５００は、内部に空間が形成された有底で筒状の処理容器１０を有する。処理容器１０の上部は、蓋体１１によって塞がれている。処理容器１０の側壁には、開口１３が設けられており、開口１３は、ゲートバルブＧによって開閉される。 [Details of the Second Deposition Device 500]
FIG. 2 is a schematic cross-sectional view showing an example of the second film forming apparatus 500 according to the embodiment of the present disclosure. The second film forming apparatus 500 has a bottomed and tubular processing container 10 having a space formed inside. The upper part of the processing container 10 is closed by the lid 11. An opening 13 is provided on the side wall of the processing container 10, and the opening 13 is opened and closed by the gate valve G.
　処理容器１０の底部には、排気管１５の一端が接続されている。排気管１５の他端は、ＡＰＣ（Automatic　Pressure　Controller）バルブ１６を介して排気装置１７に接続されている。排気装置１７を駆動することにより、排気管１５を介して処理容器１０内のガスが排気され、ＡＰＣバルブ１６の開度を調整することにより、処理容器１０内の圧力が調整される。 One end of the exhaust pipe 15 is connected to the bottom of the processing container 10. The other end of the exhaust pipe 15 is connected to the exhaust device 17 via an APC (Automatic Pressure Controller) valve 16. By driving the exhaust device 17, the gas in the processing container 10 is exhausted through the exhaust pipe 15, and the pressure in the processing container 10 is adjusted by adjusting the opening degree of the APC valve 16.
　処理容器１０内には、処理容器１０内においてウエハＷを保持する保持機構２０が設けられている。保持機構２０は、支持リング２１、複数の支持部２２、および複数の駆動部２３を有する。さらに図３を参照して説明を続ける。図３は、本開示の一実施形態における保持機構２０の一例を示す斜視図である。 A holding mechanism 20 for holding the wafer W in the processing container 10 is provided in the processing container 10. The holding mechanism 20 has a support ring 21, a plurality of support portions 22, and a plurality of drive portions 23. Further, the description will be continued with reference to FIG. FIG. 3 is a perspective view showing an example of the holding mechanism 20 according to the embodiment of the present disclosure.
　支持リング２１は、略円環状の形状であり、ウエハＷの周縁を下方から支持する。支持リング２１の中心軸を軸Ｘと定義する。また、例えば図３に示されるように、支持リング２１の一部は、アーム１０７ａと干渉しないように切りかかれている。 The support ring 21 has a substantially annular shape and supports the peripheral edge of the wafer W from below. The central axis of the support ring 21 is defined as the axis X. Further, for example, as shown in FIG. 3, a part of the support ring 21 is cut so as not to interfere with the arm 107a.
　それぞれの支持部２２は、支持リング２１に固定されており、支持リング２１を支持する。本実施形態において、保持機構２０は、３本の支持部２２を有する。 Each support portion 22 is fixed to the support ring 21 and supports the support ring 21. In this embodiment, the holding mechanism 20 has three support portions 22.
　それぞれの駆動部２３は、蓋体１１上に配置され、支持部２２を上下方向に移動させる。本実施形態において、保持機構２０は、３個の支持部２２を有し、１つの駆動部２３は、１つの支持部２２を上下方向に移動させる。なお、１つの駆動部２３により、複数の支持部２２が駆動されてもよい。 Each drive unit 23 is arranged on the lid body 11 and moves the support unit 22 in the vertical direction. In the present embodiment, the holding mechanism 20 has three support portions 22, and one drive portion 23 moves one support portion 22 in the vertical direction. A plurality of support units 22 may be driven by one drive unit 23.
　例えば、それぞれの駆動部２３が支持部２２を下降させる。そして、素子が形成された面が上方を向くようにウエハＷを載せたアーム１０７ａが、ウエハＷの中心軸と軸Ｘとを合わせるように支持リング２１上の位置まで進入する。そして、それぞれの駆動部２３が支持部２２を上昇させることにより、ウエハＷが支持リング２１に受け渡される。そして、アーム１０７ａが処理容器１０内から退避した後、それぞれの駆動部２３が支持部２２を下降させることにより、支持リング２１が軸Ｘに沿って下降し、ウエハＷが成膜時の位置まで下降する。 For example, each drive unit 23 lowers the support unit 22. Then, the arm 107a on which the wafer W is placed so that the surface on which the element is formed faces upward enters the position on the support ring 21 so that the central axis of the wafer W and the axis X are aligned with each other. Then, each drive unit 23 raises the support unit 22, so that the wafer W is delivered to the support ring 21. Then, after the arm 107a is retracted from the processing container 10, each drive unit 23 lowers the support portion 22, so that the support ring 21 is lowered along the axis X and the wafer W reaches the position at the time of film formation. Descend.
　蓋体１１の下面には、支持リング２１上に保持されたウエハＷの温度を制御する温度制御部１２が設けられている。温度制御部１２は、例えばヒータやランプ等であり、輻射熱によって支持リング２１上に保持されたウエハＷの温度を、成膜に適した温度に制御する。 On the lower surface of the lid 11, a temperature control unit 12 for controlling the temperature of the wafer W held on the support ring 21 is provided. The temperature control unit 12 is, for example, a heater, a lamp, or the like, and controls the temperature of the wafer W held on the support ring 21 by radiant heat to a temperature suitable for film formation.
　処理容器１０の下部には、ウエハＷの裏面に、制御装置１１０によって算出された成膜パターンに応じた膜を成膜する成膜機構３０が配置されている。成膜機構３０は、成膜部３１、支持部３２、および駆動部３３を有する。さらに図４および図５を参照して説明を続ける。図４は、本開示の一実施形態における成膜機構３０の一例を示す斜視図である。図５は、本開示の一実施形態における成膜部３１の一例を示す部分断面図である。 In the lower part of the processing container 10, a film forming mechanism 30 for forming a film according to the film forming pattern calculated by the control device 110 is arranged on the back surface of the wafer W. The film forming mechanism 30 has a film forming section 31, a support section 32, and a driving section 33. Further, the description will be continued with reference to FIGS. 4 and 5. FIG. 4 is a perspective view showing an example of the film forming mechanism 30 according to the embodiment of the present disclosure. FIG. 5 is a partial cross-sectional view showing an example of the film forming portion 31 according to the embodiment of the present disclosure.
　成膜部３１の上面には、例えば図４に示されるように、複数の供給部３１０－１～３１０－ｎ（ｎは、２以上の整数）が設けられている。複数の供給部３１０－１～３１０－ｎは、支持リング２１に保持されたウエハＷの下方に、ウエハＷの径方向、即ち、軸Ｘを中心とする円の径方向に沿って並べて配置されている。また、軸Ｘを中心とする円の径方向において、複数の供給部３１０－１～３１０－ｎが配置されている領域の長さは、ウエハＷの半径以上の長さである。なお、以下では、供給部３１０－１～３１０－ｎのそれぞれを区別することなく総称する場合に供給部３１０と記載する。 As shown in FIG. 4, for example, a plurality of supply units 310-1 to 310-n (n is an integer of 2 or more) are provided on the upper surface of the film forming unit 31. The plurality of supply units 310-1 to 310-n are arranged side by side below the wafer W held by the support ring 21 along the radial direction of the wafer W, that is, the radial direction of the circle centered on the axis X. ing. Further, in the radial direction of the circle centered on the axis X, the length of the region where the plurality of supply units 310-1 to 310-n are arranged is longer than the radius of the wafer W. In the following, the supply units 310-1 to 310-n will be referred to as the supply unit 310 when they are generically referred to without distinction.
　それぞれの供給部３１０は、例えば図５に示されるように、第１の供給口３１１、排気口３１２、および第２の供給口３１３を有する。第１の供給口３１１は、成膜に用いられる第１のガスをウエハＷの裏面に供給する。排気口３１２は、ウエハＷの裏面に供給されたガスを吸引する。第２の供給口３１３は、成膜に用いられる第２のガスをウエハＷの裏面に供給する。第１のガスおよび第２のガスは、材料ガスの一例である。例えば図５に示されるように、排気口３１２は、第１の供給口３１１および第２の供給口３１３に隣接している。また、第１の供給口３１１は、排気口３１２を囲むように成膜部３１に形成されている。 Each supply unit 310 has a first supply port 311, an exhaust port 312, and a second supply port 313, for example, as shown in FIG. The first supply port 311 supplies the first gas used for film formation to the back surface of the wafer W. The exhaust port 312 sucks the gas supplied to the back surface of the wafer W. The second supply port 313 supplies the second gas used for film formation to the back surface of the wafer W. The first gas and the second gas are examples of material gases. For example, as shown in FIG. 5, the exhaust port 312 is adjacent to the first supply port 311 and the second supply port 313. Further, the first supply port 311 is formed in the film forming portion 31 so as to surround the exhaust port 312.
　成膜部３１内には、例えば図５に示されるように、第１のガスが流れる複数の流路３１４、排気されるガスが流れる複数の流路３１５、および、第２のガスが流れる複数の流路３１６が形成されている。 In the film forming section 31, for example, as shown in FIG. 5, a plurality of flow paths 314 through which the first gas flows, a plurality of flow paths 315 through which the exhaust gas flows, and a plurality of flow paths 315 through which the second gas flows. Flow path 316 is formed.
　１つの流路３１４は、供給穴３１７を介して、１つの供給部３１０の第１の供給口３１１に繋がっている。流路３１４に供給された第１のガスは、対応する供給穴３１７を介して、対応する供給部３１０の第１の供給口３１１からウエハＷの裏面に供給される。 One flow path 314 is connected to the first supply port 311 of one supply unit 310 via a supply hole 317. The first gas supplied to the flow path 314 is supplied to the back surface of the wafer W from the first supply port 311 of the corresponding supply unit 310 through the corresponding supply hole 317.
　また、１つの流路３１５は、排気穴３１８を介して、１つの供給部３１０の排気口３１２に繋がっている。排気口３１２から吸引されたガスは、対応する排気穴３１８を介して、対応する流路３１５へ流れ、排気される。 Further, one flow path 315 is connected to the exhaust port 312 of one supply unit 310 via the exhaust hole 318. The gas sucked from the exhaust port 312 flows to the corresponding flow path 315 through the corresponding exhaust hole 318 and is exhausted.
　また、１つの流路３１６は、供給穴３１９を介して、１つの供給部３１０の第２の供給口３１３に繋がっている。流路３１６に供給された第２のガスは、対応する供給穴３１９を介して、対応する供給部３１０の第２の供給口３１３からウエハＷの裏面に供給される。供給部３１０からウエハＷの裏面へのガスの供給および供給停止、ならびに、供給部３１０からウエハＷの裏面へ供給されガスの排気および排気停止は、それぞれの供給部３１０において独立に制御される。 Further, one flow path 316 is connected to the second supply port 313 of one supply unit 310 via the supply hole 319. The second gas supplied to the flow path 316 is supplied to the back surface of the wafer W from the second supply port 313 of the corresponding supply unit 310 through the corresponding supply hole 319. The supply and suspension of gas supply from the supply unit 310 to the back surface of the wafer W, and the exhaust and exhaust stop of the gas supplied from the supply unit 310 to the back surface of the wafer W are independently controlled by the respective supply units 310.
　また、成膜部３１内には、ガルデン（登録商標）等の熱媒体が流れる流路３２０および流路３２１が形成されている。図示しない温度制御装置によって温度制御された熱媒体が流路３２０および流路３２１内を循環することにより、成膜部３１の温度が所定温度に制御される。成膜部３１の温度を、反応副生成物（いわゆるデポ）が発生し難い温度に制御することにより、成膜部３１へのデポの堆積を抑制することができる。 Further, in the film forming portion 31, a flow path 320 and a flow path 321 through which a heat medium such as Galden (registered trademark) flows are formed. The temperature of the film forming unit 31 is controlled to a predetermined temperature by circulating the heat medium whose temperature is controlled by a temperature control device (not shown) in the flow path 320 and the flow path 321. By controlling the temperature of the film forming section 31 to a temperature at which reaction by-products (so-called depots) are unlikely to be generated, it is possible to suppress the deposition of depots on the film forming section 31.
　図６は、本開示の一実施形態におけるガスの流れの一例を説明するための模式図である。例えば、第１の供給口３１１から供給された第１のガス、および、第２の供給口３１３から供給された第２のガスは、例えば図６に示されるように、ウエハＷの裏面に向かって供給される。ウエハＷの裏面に供給された第１のガスおよび第２のガスは、ウエハＷの裏面に沿って拡散する。そして、第１のガスと第２のガスとがウエハＷの裏面において混合されることにより、ウエハＷの裏面に所定の膜が成膜される。 FIG. 6 is a schematic diagram for explaining an example of gas flow in one embodiment of the present disclosure. For example, the first gas supplied from the first supply port 311 and the second gas supplied from the second supply port 313 toward the back surface of the wafer W, for example, as shown in FIG. Is supplied. The first gas and the second gas supplied to the back surface of the wafer W diffuse along the back surface of the wafer W. Then, the first gas and the second gas are mixed on the back surface of the wafer W to form a predetermined film on the back surface of the wafer W.
　また、ウエハＷの裏面に沿って拡散した第１のガスおよび第２のガスは、第１の供給口３１１および第２の供給口３１３に隣接する排気口３１２内に流れ込む。即ち、それぞれの供給部３１０において、第１の供給口３１１および第２の供給口３１３からウエハＷの裏面に供給されたガスは、排気口３１２を介して、第１の供給口３１１および第２の供給口３１３からガスが供給される方向とは反対の方向に排気される。そのため、例えば図６に示されるように、第１の供給口３１１および第２の供給口３１３から排気口３１２へのガスの流れが発生し、供給部３１０の領域外へのガスの漏洩が抑制される。そのため、ウエハＷの裏面において、供給部３１０の直上に第１のガスおよび第２のガスを用いた成膜を行うことができる。 Further, the first gas and the second gas diffused along the back surface of the wafer W flow into the exhaust port 312 adjacent to the first supply port 311 and the second supply port 313. That is, in each of the supply units 310, the gas supplied from the first supply port 311 and the second supply port 313 to the back surface of the wafer W via the exhaust port 312 is the first supply port 311 and the second supply port 311 and the second. The gas is exhausted in the direction opposite to the direction in which the gas is supplied from the supply port 313 of the above. Therefore, for example, as shown in FIG. 6, a gas flow is generated from the first supply port 311 and the second supply port 313 to the exhaust port 312, and the leakage of gas outside the region of the supply unit 310 is suppressed. Will be done. Therefore, on the back surface of the wafer W, a film can be formed using the first gas and the second gas directly above the supply unit 310.
　支持部３２は、成膜部３１を支持する。駆動部３３は、軸Ｘを中心として支持部３２を回転させる。駆動部３３は、回転機構の一例である。支持部３２が回転することにより、例えば図４に示されるように、成膜部３１も軸Ｘを中心として回転する。これにより、支持リング２１上に保持されたウエハＷに対して、成膜部３１が処理容器１０内で相対的に移動する。 The support portion 32 supports the film forming portion 31. The drive unit 33 rotates the support unit 32 around the shaft X. The drive unit 33 is an example of a rotation mechanism. As the support portion 32 rotates, the film forming portion 31 also rotates about the axis X, for example, as shown in FIG. As a result, the film forming portion 31 moves relatively in the processing container 10 with respect to the wafer W held on the support ring 21.
　成膜部３１には、第１のガス供給機構５０、第２のガス供給機構６０、およびバルブ群７０が接続されている。第１のガス供給機構５０は、ガス供給源５１、複数のＭＦＣ（Mass　Flow　Controller）５２－１～５２－ｎ、および複数のバルブ５３－１～５３－ｎを有する。なお、以下では、ＭＦＣ５２－１～５２－ｎのそれぞれを区別することなく総称する場合にＭＦＣ５２と記載し、バルブ５３－１～５３－ｎのそれぞれを区別することなく総称する場合にバルブ５３と記載する。 The first gas supply mechanism 50, the second gas supply mechanism 60, and the valve group 70 are connected to the film forming section 31. The first gas supply mechanism 50 has a gas supply source 51, a plurality of MFCs (Mass Flow Controllers) 52-1 to 52-n, and a plurality of valves 53-1 to 53-n. In the following, when each of MFC52-1 to 52-n is generically referred to as MFC52, and when each of valves 53-1 to 53-n is generically referred to as valve 53, it is referred to as valve 53. Describe.
　１つの供給部３１０に対して、１つのＭＦＣ５２および１つのバルブ５３が設けられている。それぞれのバルブ５３の一端は、配管を介して対応する供給部３１０の第１の供給口３１１に第１のガスを供給する流路３１４に接続されている。また、それぞれのバルブ５３の他端は、対応するＭＦＣ５２を介して、第１のガスの供給源であるガス供給源５１に接続されている。それぞれのＭＦＣ５２は、ガス供給源５１から供給された第１のガスの流量を制御し、流量が制御された第１のガスを、対応するバルブ５３を介して対応する流路３１４に供給する。それぞれのＭＦＣ５２およびバルブ５３は、制御装置１１０によって互いに独立に制御される。 One MFC 52 and one valve 53 are provided for one supply unit 310. One end of each valve 53 is connected to a flow path 314 for supplying the first gas to the first supply port 311 of the corresponding supply unit 310 via a pipe. Further, the other end of each valve 53 is connected to the gas supply source 51, which is the first gas supply source, via the corresponding MFC 52. Each MFC 52 controls the flow rate of the first gas supplied from the gas supply source 51, and supplies the flow-controlled first gas to the corresponding flow path 314 via the corresponding valve 53. Each MFC 52 and valve 53 are controlled independently of each other by the control device 110.
　第２のガス供給機構６０は、ガス供給源６１、複数のＭＦＣ６２－１～６２－ｎ、および複数のバルブ６３－１～６３－ｎを有する。なお、以下では、ＭＦＣ６２－１～６２－ｎのそれぞれを区別することなく総称する場合にＭＦＣ６２と記載し、バルブ６３－１～６３－ｎのそれぞれを区別することなく総称する場合にバルブ６３と記載する。 The second gas supply mechanism 60 has a gas supply source 61, a plurality of MFCs 62-1 to 62-n, and a plurality of valves 63-1 to 63-n. In the following, when each of MFC62-1 to 62-n is generically referred to as MFC62, and when each of valves 63-1 to 63-n is generically referred to as valve 63, it is referred to as valve 63. Describe.
　１つの供給部３１０に対して、１つのＭＦＣ６２および１つのバルブ６３が設けられている。それぞれのバルブ６３の一端は、配管を介して対応する供給部３１０の第２の供給口３１３に第２のガスを供給する流路３１６に接続されている。また、それぞれのバルブ６３の他端は、対応するＭＦＣ６２を介して、第２のガスの供給源であるガス供給源６１に接続されている。それぞれのＭＦＣ６２は、ガス供給源６１から供給された第２のガスの流量を制御し、流量が制御された第２のガスを、対応するバルブ６３を介して対応する流路３１６に供給する。それぞれのＭＦＣ６２およびバルブ６３は、制御装置１１０によって互いに独立に制御される。 One MFC 62 and one valve 63 are provided for one supply unit 310. One end of each valve 63 is connected to a flow path 316 for supplying the second gas to the second supply port 313 of the corresponding supply unit 310 via a pipe. Further, the other end of each valve 63 is connected to a gas supply source 61 which is a second gas supply source via a corresponding MFC 62. Each MFC 62 controls the flow rate of the second gas supplied from the gas supply source 61, and supplies the flow-controlled second gas to the corresponding flow path 316 via the corresponding valve 63. Each MFC 62 and valve 63 are controlled independently of each other by the control device 110.
　バルブ群７０は、複数のバルブ７１－１～７１－ｎを有する。なお、以下では、バルブ７１－１～７１－ｎのそれぞれを区別することなく総称する場合にバルブ７１と記載する。 The valve group 70 has a plurality of valves 71-1 to 71-n. In the following, valves 71-1 to 71-n will be referred to as valves 71 when they are generically referred to without distinction.
　１つの供給部３１０に対して、１つのバルブ７１が設けられている。それぞれのバルブ７１の一端は、配管を介して対応する供給部３１０の排気口３１２から吸引されたガスが流れる流路３１５に接続されている。また、それぞれのバルブ７１の他端は排気装置１７に接続されている。それぞれのバルブ７１は、制御装置１１０によって互いに独立に制御される。 One valve 71 is provided for one supply unit 310. One end of each valve 71 is connected to a flow path 315 through which the gas sucked from the exhaust port 312 of the corresponding supply unit 310 flows through a pipe. Further, the other end of each valve 71 is connected to the exhaust device 17. Each valve 71 is controlled independently of each other by the control device 110.
　このように構成された第２の成膜装置５００において、軸Ｘを中心として成膜部３１を回転させながら、ウエハＷの裏面へのガスの供給および排気が、それぞれの供給部３１０において個別に制御される。これにより、支持リング２１上に保持されたウエハＷの裏面に、制御装置１１０によって算出された成膜パターンの膜が成膜される。 In the second film forming apparatus 500 configured in this way, the gas supply and exhaust to the back surface of the wafer W are individually supplied to the back surface of the wafer W while rotating the film forming section 31 around the axis X. Be controlled. As a result, a film having a film formation pattern calculated by the control device 110 is formed on the back surface of the wafer W held on the support ring 21.
　蓋体１１には、処理容器１０内にパージガスを供給するためのガス導入口１４が形成されている。ガス導入口１４には、配管を介してパージガス供給機構４０が接続されている。パージガス供給機構４０は、ガス供給源４１、ＭＦＣ４２、およびバルブ４３を有する。バルブ４３の一端は、配管を介してガス導入口１４に接続されている。また、バルブ４３の他端は、ＭＦＣ４２を介して、パージガスの供給源であるガス供給源４１に接続されている。パージガスは、例えばヘリウムガス、アルゴンガス、または窒素ガス等の不活性ガスである。 The lid 11 is formed with a gas introduction port 14 for supplying purge gas into the processing container 10. A purge gas supply mechanism 40 is connected to the gas introduction port 14 via a pipe. The purge gas supply mechanism 40 has a gas supply source 41, an MFC 42, and a valve 43. One end of the valve 43 is connected to the gas introduction port 14 via a pipe. The other end of the valve 43 is connected to the gas supply source 41, which is a supply source of purge gas, via the MFC 42. The purge gas is an inert gas such as helium gas, argon gas, or nitrogen gas.
　ＭＦＣ４２は、ウエハＷの裏面への成膜時に、ガス供給源４１から供給されたパージガスの流量を制御し、流量が制御されたパージガスを、バルブ４３およびガス導入口１４を介して処理容器１０内に供給する。ガス導入口１４は、ウエハＷが支持リング２１によって支持されている状態で、素子が形成されるウエハＷの面にパージガスを供給する。ガス導入口１４は、第２のパージガス供給口の一例である。これにより、ウエハＷの裏面への成膜時に、ウエハＷの裏面への成膜に用いられるガスや、ウエハＷの裏面への成膜時に発生したパーティクル等が、ウエハＷの上面側に侵入することが抑制される。 The MFC 42 controls the flow rate of the purge gas supplied from the gas supply source 41 at the time of film formation on the back surface of the wafer W, and the flow-controlled purge gas is supplied into the processing container 10 via the valve 43 and the gas introduction port 14. Supply to. The gas introduction port 14 supplies purge gas to the surface of the wafer W on which the element is formed while the wafer W is supported by the support ring 21. The gas introduction port 14 is an example of a second purge gas supply port. As a result, when the film is formed on the back surface of the wafer W, the gas used for forming the film on the back surface of the wafer W, the particles generated during the film formation on the back surface of the wafer W, and the like invade the upper surface side of the wafer W. Is suppressed.
　以上、一実施形態について説明した。上記したように、本実施形態における半導体製造システム１００は、測定装置４００と、制御装置１１０と、第２の成膜装置５００とを備える。測定装置４００は、ウエハＷの高さの分布を測定する。制御装置１１０は、測定装置４００によって測定された高さの分布からウエハＷに加わっている応力を低減する成膜パターンを算出する。第２の成膜装置５００は、制御装置１１０によって算出された成膜パターンに従って、素子が形成されたウエハＷの面の裏面に成膜を行う。第２の成膜装置５００は、処理容器１０と、支持リング２１と、成膜部３１とを備える。支持リング２１は、処理容器１０内に配置されたウエハＷの周縁を支持する。成膜部３１は、複数の供給部３１０を有し、ウエハＷの裏面に向かってそれぞれの供給部３１０から材料ガスを供給することにより、ウエハＷの裏面に成膜を行う。制御装置１１０は、それぞれの供給部３１０からの材料ガスの供給および供給停止を独立に制御する。これにより、ウエハＷの反り等を低減するための成膜に要する工数を削減することができる。 The embodiment has been described above. As described above, the semiconductor manufacturing system 100 in this embodiment includes a measuring device 400, a control device 110, and a second film forming device 500. The measuring device 400 measures the height distribution of the wafer W. The control device 110 calculates a film formation pattern for reducing the stress applied to the wafer W from the height distribution measured by the measuring device 400. The second film forming apparatus 500 forms a film on the back surface of the surface of the wafer W on which the element is formed according to the film forming pattern calculated by the control device 110. The second film forming apparatus 500 includes a processing container 10, a support ring 21, and a film forming section 31. The support ring 21 supports the peripheral edge of the wafer W arranged in the processing container 10. The film forming unit 31 has a plurality of supply units 310, and forms a film on the back surface of the wafer W by supplying the material gas from each supply unit 310 toward the back surface of the wafer W. The control device 110 independently controls the supply and stop of the supply of the material gas from each supply unit 310. As a result, the man-hours required for film formation for reducing the warpage of the wafer W can be reduced.
　また、上記した実施形態において、成膜部３１は、処理容器１０内でウエハＷに対して相対的に移動する。これにより、ウエハＷの裏面に任意のパターンの膜を効率よく成膜することができる。 Further, in the above-described embodiment, the film forming unit 31 moves relative to the wafer W in the processing container 10. As a result, a film having an arbitrary pattern can be efficiently formed on the back surface of the wafer W.
　また、上記した実施形態において、ウエハＷは、略円板状であり、複数の供給部３１０は、ウエハＷの裏面の下方に、ウエハＷの径方向に並べて配置されている。また、第２の成膜装置５００は、成膜部３１を支持し、ウエハＷの中心軸を中心として成膜部３１を回転させる駆動部３３を備える。これにより、ウエハＷの裏面に任意のパターンの膜を効率よく成膜することができる。 Further, in the above-described embodiment, the wafer W has a substantially disk shape, and the plurality of supply units 310 are arranged below the back surface of the wafer W in the radial direction of the wafer W. Further, the second film forming apparatus 500 includes a driving unit 33 that supports the film forming section 31 and rotates the film forming section 31 around the central axis of the wafer W. As a result, a film having an arbitrary pattern can be efficiently formed on the back surface of the wafer W.
　また、上記した実施形態において、それぞれの供給部３１０は、材料ガスをウエハＷの裏面に供給する第１の供給口３１１と、第１の供給口３１１に隣接する排気口３１２とを有する。それぞれの供給部３１０において、第１の供給口３１１からウエハＷの裏面に供給された材料ガスは、第１の供給口３１１に隣接する排気口３１２を介して、第１の供給口３１１から材料ガスが供給される方向とは反対の方向に排気される。これにより、それぞれの供給部３１０から供給された材料ガスが、他の供給部３１０の領域に侵入することが抑制される。これにより、供給部３１０の領域毎にウエハＷの裏面に成膜を行うことができる。 Further, in the above-described embodiment, each supply unit 310 has a first supply port 311 for supplying the material gas to the back surface of the wafer W, and an exhaust port 312 adjacent to the first supply port 311. In each supply unit 310, the material gas supplied from the first supply port 311 to the back surface of the wafer W is made of material from the first supply port 311 via the exhaust port 312 adjacent to the first supply port 311. The gas is exhausted in the direction opposite to the direction in which the gas is supplied. As a result, the material gas supplied from each supply unit 310 is suppressed from entering the region of the other supply unit 310. As a result, a film can be formed on the back surface of the wafer W for each region of the supply unit 310.
　また、上記した実施形態において、それぞれの供給部３１０において、第１の供給口３１１は、第１の供給口３１１に隣接する排気口３１２を囲むように成膜部３１に形成されている。これにより、それぞれの供給部３１０から供給された材料ガスが、他の供給部３１０の領域に侵入することが抑制される。これにより、供給部３１０の領域毎にウエハＷの裏面に成膜を行うことができる。 Further, in the above-described embodiment, in each supply unit 310, the first supply port 311 is formed in the film forming unit 31 so as to surround the exhaust port 312 adjacent to the first supply port 311. As a result, the material gas supplied from each supply unit 310 is suppressed from entering the region of the other supply unit 310. As a result, a film can be formed on the back surface of the wafer W for each region of the supply unit 310.
　また、上記した実施形態において、ウエハＷが支持リング２１によって支持されている状態で、素子が形成されるウエハＷの面にパージガスを供給するパージガス供給機構４０を備える。これにより、ウエハＷの裏面への成膜時に、ウエハＷの裏面への成膜に用いられるガスや、ウエハＷの裏面への成膜時に発生したパーティクル等が、ウエハＷの上面側に侵入することが抑制される。 Further, in the above-described embodiment, the purge gas supply mechanism 40 for supplying the purge gas to the surface of the wafer W on which the element is formed is provided in a state where the wafer W is supported by the support ring 21. As a result, when the film is formed on the back surface of the wafer W, the gas used for forming the film on the back surface of the wafer W, the particles generated during the film formation on the back surface of the wafer W, and the like enter the upper surface side of the wafer W. Is suppressed.
　また、上記した実施形態において、成膜部３１には、温度制御された熱媒体が流れる流路３２０および流路３２１が形成されている。流路３２０および流路３２１内に温度制御された熱媒体が循環させることにより、成膜部３１へのデポの堆積を抑制することができる。 Further, in the above-described embodiment, the film forming portion 31 is formed with a flow path 320 and a flow path 321 through which a temperature-controlled heat medium flows. By circulating the temperature-controlled heat medium in the flow path 320 and the flow path 321, it is possible to suppress the deposition of the depot on the film forming portion 31.
［その他］
　なお、本願に開示された技術は、上記した実施形態に限定されるものではなく、その要旨の範囲内で数々の変形が可能である。 [Other]
The technique disclosed in the present application is not limited to the above-described embodiment, and many modifications can be made within the scope of the gist thereof.
　例えば、上記した実施形態において、複数の供給部３１０は、例えば図４に示されるように、軸Ｘを中心とする円の径方向に沿って１列に並べて配置される。しかし、開示の技術はこれに限られず、軸Ｘを中心とする円の径方向において異なる位置に配置されていれば、１列に並べて配置されていなくてもよい。複数の供給部３１０は、例えば図７に示されるように、軸Ｘを中心とする円の径方向ｒにおいて、それぞれの供給部３１０の幅Ｌ１分異なる位置に配置されてもよい。図７は、供給部３１０の配置の他の例を示す図である。 For example, in the above embodiment, the plurality of supply units 310 are arranged side by side in a row along the radial direction of the circle centered on the axis X, for example, as shown in FIG. However, the disclosed technique is not limited to this, and if they are arranged at different positions in the radial direction of the circle centered on the axis X, they may not be arranged side by side in a row. As shown in FIG. 7, for example, the plurality of supply units 310 may be arranged at positions different from each other by the width L1 of the respective supply units 310 in the radial direction r of the circle centered on the axis X. FIG. 7 is a diagram showing another example of the arrangement of the supply unit 310.
　図７の例では、それぞれの供給部３１０は、軸Ｘを中心とする円の径方向において、異なる位置に配置され、かつ、それぞれの供給部３１０の幅Ｌ１の合計の長さが、複数の供給部３１０が配置される領域の長さＬ２と同じ長さになっている。長さＬ２は、例えばウエハＷの半径と同じ長さであってもよい。これにより、軸Ｘを中心とする円の径方向において複数の供給部３１０を密に配置することができ、より細かい形状の成膜パターンをウエハＷの裏面に成膜することができる。 In the example of FIG. 7, each supply unit 310 is arranged at a different position in the radial direction of the circle centered on the axis X, and the total length of the width L1 of each supply unit 310 is a plurality of lengths. It has the same length as the length L2 of the region where the supply unit 310 is arranged. The length L2 may be, for example, the same length as the radius of the wafer W. As a result, the plurality of supply portions 310 can be densely arranged in the radial direction of the circle centered on the axis X, and a film formation pattern having a finer shape can be formed on the back surface of the wafer W.
　また、上記した実施形態において、複数の供給部３１０は、軸Ｘから、軸Ｘを中心とする円の径方向へ１列に並ぶように成膜部３１に配置されているが、開示の技術はこれに限られない。例えば、複数の供給部３１０は、軸Ｘから、軸Ｘを中心とする円の径方向へ並ぶように成膜部３１に配置されていれば、例えば図８に示されるように、複数の方向に並べて配置されてもよい。これにより、成膜パターンをウエハＷの裏面に成膜するのに要する時間を短縮することができる。 Further, in the above-described embodiment, the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in a row from the axis X in the radial direction of the circle centered on the axis X. Is not limited to this. For example, if the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in the radial direction of the circle centered on the axis X from the axis X, for example, as shown in FIG. 8, a plurality of directions It may be arranged side by side in. As a result, the time required to form the film formation pattern on the back surface of the wafer W can be shortened.
　図８は、成膜機構３０の他の例を示す図である。複数の供給部３１０は、例えば図８（ａ）に示されるように、軸Ｘを中心とする円の直径方向へ並ぶように成膜部３１に配置されていてもよい。また、複数の供給部３１０は、例えば図８（ｂ）に示されるように、軸Ｘを中心とする円の径方向であって、互いに交差する方向へ並ぶように成膜部３１に配置されていてもよい。図８（ａ）の例では、複数の供給部３１０は、軸Ｘから２つの方向に並ぶように配置されており、図８（ｂ）の例では、複数の供給部３１０は、軸Ｘから４つの方向に並ぶように配置されている。なお、複数の供給部３１０は、軸Ｘから３つの方向に並ぶように配置されてもよく、軸Ｘから５つ以上の方向に並ぶように配置されてもよい。 FIG. 8 is a diagram showing another example of the film forming mechanism 30. As shown in FIG. 8A, for example, the plurality of supply units 310 may be arranged in the film forming unit 31 so as to be arranged in the diameter direction of the circle centered on the axis X. Further, as shown in FIG. 8B, for example, the plurality of supply units 310 are arranged in the film forming unit 31 so as to be arranged in the radial direction of the circle centered on the axis X and in the direction intersecting each other. You may be. In the example of FIG. 8 (a), the plurality of supply units 310 are arranged so as to be arranged in two directions from the axis X, and in the example of FIG. 8 (b), the plurality of supply units 310 are arranged from the axis X. They are arranged so as to line up in four directions. The plurality of supply units 310 may be arranged so as to be arranged in three directions from the axis X, or may be arranged so as to be arranged in five or more directions from the axis X.
　また、上記した実施形態では、ウエハＷの裏面に材料ガスを供給することにより、ウエハＷの裏面に所定パターンの膜が成膜されるが、開示の技術はこれに限られない。例えば第２のガスをプラズマ化させ、プラズマに含まれる活性種を用いてウエハＷの裏面に所定パターンの膜が成膜されてもよい。 Further, in the above-described embodiment, a film having a predetermined pattern is formed on the back surface of the wafer W by supplying the material gas to the back surface of the wafer W, but the disclosed technique is not limited to this. For example, the second gas may be turned into plasma, and a film having a predetermined pattern may be formed on the back surface of the wafer W using the active species contained in the plasma.
　図９は、成膜部３１の他の例を示す断面図である。図９の例では、第２の供給口３１３の内側壁に絶縁部材３１３０を挟んで電極３１３１および電極３１３２が設けられている。電極３１３１と電極３１３２とは、板状に形成され、互いに対向するように第２の供給口３１３の内側壁に配置されている。電極３１３１には、高周波電源３１３３が電気的に接続されており、電極３１３２は、接地されている。高周波電源３１３３からの高周波電力が電極３１３１に供給されることにより、第２の供給口３１３内を流れる第２のガスがプラズマ化され、プラズマに含まれる活性種がウエハＷの裏面に供給される。そして、プラズマに含まれる活性種によりウエハＷの裏面に所定の膜が成膜される。電極３１３１、電極３１３２、および高周波電源３１３３は、プラズマ生成部の一例である。 FIG. 9 is a cross-sectional view showing another example of the film forming portion 31. In the example of FIG. 9, the electrode 3131 and the electrode 3132 are provided on the inner side wall of the second supply port 313 with the insulating member 3130 interposed therebetween. The electrode 3131 and the electrode 3132 are formed in a plate shape and are arranged on the inner side wall of the second supply port 313 so as to face each other. A high frequency power supply 3133 is electrically connected to the electrode 3131, and the electrode 3132 is grounded. By supplying high-frequency power from the high-frequency power supply 3133 to the electrode 3131, the second gas flowing in the second supply port 313 is turned into plasma, and the active species contained in the plasma is supplied to the back surface of the wafer W. .. Then, a predetermined film is formed on the back surface of the wafer W by the active species contained in the plasma. The electrode 3131, the electrode 3132, and the high-frequency power supply 3133 are examples of the plasma generation unit.
　また、成膜部３１には、例えば図１０および図１１に示されるように、複数の供給部３１０を囲むようにパージガスの供給口３３０が設けられてもよい。図１０は、成膜機構３０の他の例を示す図である。図１１は、成膜部３１の他の例を示す断面図である。 Further, the film forming section 31 may be provided with a purge gas supply port 330 so as to surround the plurality of supply sections 310, for example, as shown in FIGS. 10 and 11. FIG. 10 is a diagram showing another example of the film forming mechanism 30. FIG. 11 is a cross-sectional view showing another example of the film forming portion 31.
　供給口３３０は、例えば図１１に示されるように、供給穴３３１を介してパージガスが流れる流路３３２に繋がっている。パージガスは、例えばヘリウムガス、アルゴンガス、または窒素ガス等の不活性ガスである。図示しないガス供給機構から流路３３２内に供給されたパージガスは、供給穴３３１を介して供給口３３０からウエハＷの裏面に供給される。ウエハＷの裏面に供給されたパージガスは、ウエハＷの裏面に沿って拡散し、排気口３１２を介して排気される。供給口３３０は、それぞれの供給部３１０からガスが供給される方向と同じ方向にパージガスを供給する。供給口３３０は、第１のパージガス供給口の一例である。 The supply port 330 is connected to the flow path 332 through which the purge gas flows through the supply hole 331, for example, as shown in FIG. The purge gas is an inert gas such as helium gas, argon gas, or nitrogen gas. The purge gas supplied into the flow path 332 from a gas supply mechanism (not shown) is supplied to the back surface of the wafer W from the supply port 330 through the supply hole 331. The purge gas supplied to the back surface of the wafer W diffuses along the back surface of the wafer W and is exhausted through the exhaust port 312. The supply port 330 supplies purge gas in the same direction in which gas is supplied from each supply unit 310. The supply port 330 is an example of the first purge gas supply port.
　供給口３３０からウエハＷの裏面に供給されるパージガスによって、第１の供給口３１１から供給される第１のガス、および、第２の供給口３１３から供給される第２のガスの供給部３１０の領域外への漏洩が抑制される。なお、図９に例示された成膜部３１においても、複数の供給部３１０を囲むようにパージガスの供給口３３０が設けられてもよい。 The supply unit 310 of the first gas supplied from the first supply port 311 and the second gas supplied from the second supply port 313 by the purge gas supplied from the supply port 330 to the back surface of the wafer W. Leakage to the outside of the area is suppressed. In the film forming section 31 illustrated in FIG. 9, a purge gas supply port 330 may be provided so as to surround the plurality of supply sections 310.
　また、上記した実施形態では、ウエハＷに対して成膜部３１が移動するが、ウエハＷに対して、成膜部３１が処理容器１０内で相対的に移動すれば、例えば図１２に示されるようにウエハＷの方が移動してもよい。 Further, in the above-described embodiment, the film forming section 31 moves with respect to the wafer W, but if the film forming section 31 moves relative to the wafer W in the processing container 10, for example, FIG. 12 shows. The wafer W may be moved so as to be used.
　図１２は、保持機構２０の他の例を示す図である。図１２の例では、保持機構２０は、支持リング２１、複数の支持部２６、台座２７、および駆動部２８を有する。支持リング２１は、複数の支持部２６に固定され、複数の支持部２６によって支持されている。それぞれの支持部２６は、台座２７に固定されている。駆動部２８は、軸Ｘを中心として台座２７を回転させる。軸Ｘを中心として台座２７が回転することにより、支持部２６に支持された支持リング２１と共に、支持リング２１上に保持されたウエハＷが軸Ｘを中心として回転する。駆動部２８は、回転機構の一例である。図１２の例では、成膜部３１は回転しない。そのため、成膜部３１に対してウエハＷが相対的に回転し、成膜部３１のそれぞれ供給部３１０によって、ウエハＷの裏面の任意の位置に成膜を行うことができる。なお、ウエハＷと成膜部３１とは、両方とも、互いに反対方向に回転してもよい。 FIG. 12 is a diagram showing another example of the holding mechanism 20. In the example of FIG. 12, the holding mechanism 20 has a support ring 21, a plurality of support portions 26, a pedestal 27, and a drive portion 28. The support ring 21 is fixed to a plurality of support portions 26 and is supported by the plurality of support portions 26. Each support portion 26 is fixed to a pedestal 27. The drive unit 28 rotates the pedestal 27 about the axis X. As the pedestal 27 rotates about the axis X, the wafer W held on the support ring 21 rotates about the axis X together with the support ring 21 supported by the support portion 26. The drive unit 28 is an example of a rotation mechanism. In the example of FIG. 12, the film forming portion 31 does not rotate. Therefore, the wafer W rotates relative to the film forming section 31, and each of the supply sections 310 of the film forming section 31 can form a film at an arbitrary position on the back surface of the wafer W. Both the wafer W and the film forming portion 31 may rotate in opposite directions.
　また、上記した実施形態では、ウエハＷに対して成膜部３１が相対的に移動するが、ウエハＷの裏面の任意の位置に成膜を行うことができれば、ウエハＷに対して成膜部３１は相対的に移動しなくてもよい。この場合、成膜部３１は、例えば図１３のように構成される。図１３は、成膜部３１の他の例を示す図である。図１３の例では、ウエハＷの裏面に対向する成膜部３１の面であって、ウエハＷの裏面の領域と同じ大きさか、あるいは、ウエハＷの裏面の領域よりも広い領域に、複数の供給部３１０が密に配置されている。それぞれの供給部３１０からの材料ガスの供給を制御することにより、ウエハＷの裏面の任意の位置に成膜を行うことができる。 Further, in the above embodiment, the film forming portion 31 moves relative to the wafer W, but if the film forming can be performed at an arbitrary position on the back surface of the wafer W, the film forming portion is formed with respect to the wafer W. 31 does not have to move relatively. In this case, the film forming portion 31 is configured as shown in FIG. 13, for example. FIG. 13 is a diagram showing another example of the film forming portion 31. In the example of FIG. 13, a plurality of surfaces of the film forming portion 31 facing the back surface of the wafer W, which are the same size as the region of the back surface of the wafer W or wider than the region of the back surface of the wafer W. The supply units 310 are densely arranged. By controlling the supply of the material gas from each supply unit 310, the film can be formed at an arbitrary position on the back surface of the wafer W.
　また、上記した実施形態では、ウエハＷに対して成膜部３１が相対的に回転する方向に移動することにより、ウエハＷの裏面の任意の位置に成膜を行うが、開示の技術はこれに限られない。ウエハＷに対して成膜部３１が相対的に移動すれば、ウエハＷに対して成膜部３１が他の方向に移動してもよい。 Further, in the above-described embodiment, the film forming portion 31 moves in the direction of rotation relative to the wafer W to form a film at an arbitrary position on the back surface of the wafer W. Not limited to. If the film forming section 31 moves relative to the wafer W, the film forming section 31 may move in another direction with respect to the wafer W.
　図１４は、成膜部３１の移動方向の他の例を示す図である。例えば図１４に示されるように、ウエハＷの裏面に沿って、成膜部３１の長手方向に交差する方向へ成膜部３１を移動させてもよい。図１４の例では、成膜部３１の長手方向において、複数の供給部３１０が配置されている成膜部３１の領域の長さは、ウエハＷの直径と同じ長さか、あるいは、ウエハＷの直径よりも長い。ウエハＷの裏面に沿って、成膜部３１の長手方向に交差する方向へ成膜部３１を移動させることにより、ウエハＷの裏面の任意の位置に成膜を行うことができる。 FIG. 14 is a diagram showing another example in the moving direction of the film forming portion 31. For example, as shown in FIG. 14, the film-forming portion 31 may be moved along the back surface of the wafer W in a direction intersecting the longitudinal direction of the film-forming portion 31. In the example of FIG. 14, in the longitudinal direction of the film forming section 31, the length of the region of the film forming section 31 in which the plurality of supply sections 310 are arranged is the same as the diameter of the wafer W, or the length of the wafer W. Longer than the diameter. By moving the film forming portion 31 along the back surface of the wafer W in a direction intersecting the longitudinal direction of the film forming portion 31, film formation can be performed at an arbitrary position on the back surface of the wafer W.
　また、上記した実施形態では、測定装置４００が、素子が形成された後のウエハＷの高さの分布を測定し、制御装置１１０が、測定結果に基づいて成膜パターンを算出したが、開示の技術はこれに限られない。例えば、ウエハＷの高さの分布が予め設定された分布となるように、ウエハＷ上に素子が形成される場合には、素子が形成された後のウエハＷの高さの分布が測定されなくてもよい。この場合、高さの分布の測定を行うことなく、予め設定された高さの分布に対応する成膜パターンがウエハＷの裏面に成膜される。 Further, in the above-described embodiment, the measuring device 400 measures the height distribution of the wafer W after the element is formed, and the control device 110 calculates the film formation pattern based on the measurement result. Technology is not limited to this. For example, when an element is formed on the wafer W so that the height distribution of the wafer W becomes a preset distribution, the height distribution of the wafer W after the element is formed is measured. It does not have to be. In this case, a film formation pattern corresponding to the preset height distribution is formed on the back surface of the wafer W without measuring the height distribution.
　また、上記した実施形態では、素子が形成された後のウエハＷの裏面に、所定の成膜パターンが成膜されるが、開示の技術はこれに限られない。例えば、ウエハＷの高さの分布が予め設定された分布となるようにウエハＷ上に素子が形成される場合には、ウエハＷ上に素子が形成される前に、予め設定された高さの分布に対応する成膜パターンがウエハＷの裏面に成膜されてもよい。 Further, in the above-described embodiment, a predetermined film formation pattern is formed on the back surface of the wafer W after the element is formed, but the disclosed technique is not limited to this. For example, when an element is formed on the wafer W so that the height distribution of the wafer W is a preset distribution, the height is set in advance before the element is formed on the wafer W. A film forming pattern corresponding to the distribution of the above may be formed on the back surface of the wafer W.
　また、上記した実施形態における供給部３１０では、第２の供給口３１３を囲むように第２の供給口３１３の周囲に排気口３１２が配置され、排気口３１２を囲むように排気口３１２の周囲に第１の供給口３１１が配置されるが、開示の技術はこれに限られない。例えば、第１の供給口３１１、排気口３１２、および第２の供給口３１３が直線状に形成され、排気口３１２を挟んで、第１の供給口３１１および第２の供給口３１３が横に並べて配置されてもよい。 Further, in the supply unit 310 in the above-described embodiment, the exhaust port 312 is arranged around the second supply port 313 so as to surround the second supply port 313, and around the exhaust port 312 so as to surround the exhaust port 312. The first supply port 311 is arranged in, but the disclosed technology is not limited to this. For example, the first supply port 311 and the exhaust port 312, and the second supply port 313 are formed in a straight line, and the first supply port 311 and the second supply port 313 are laterally sandwiched by the exhaust port 312. They may be arranged side by side.
　また、上記した実施形態において、支持リング２１上に保持されたウエハＷの温度は、蓋体１１の下面に配置されたヒータやランプ等の温度制御部１２によって制御されるが、開示の技術はこれに限られない。例えば、蓋体１１の下面に配置された温度制御部１２に代えて、処理容器１０および蓋体１１を石英等で構成し、処理容器１０および蓋体１１の外部に処理容器１０および蓋体１１の温度を制御する温度制御機構を設けてもよい。温度制御機構によって処理容器１０および蓋体１１が所定温度に制御され、処理容器１０および蓋体１１からの輻射熱により、支持リング２１上に保持されたウエハＷの温度が調整される。輻射熱が、支持リング２１上に保持されたウエハＷの上方からだけでなく、周囲からもウエハＷに照射されるため、ウエハＷの温度をより均一に保つことができる。 Further, in the above-described embodiment, the temperature of the wafer W held on the support ring 21 is controlled by the temperature control unit 12 such as a heater or a lamp arranged on the lower surface of the lid 11, but the disclosed technique is described. Not limited to this. For example, instead of the temperature control unit 12 arranged on the lower surface of the lid 11, the processing container 10 and the lid 11 are made of quartz or the like, and the processing container 10 and the lid 11 are outside the processing container 10 and the lid 11. A temperature control mechanism for controlling the temperature of the lid may be provided. The processing container 10 and the lid 11 are controlled to predetermined temperatures by the temperature control mechanism, and the temperature of the wafer W held on the support ring 21 is adjusted by the radiant heat from the processing container 10 and the lid 11. Since the radiant heat is applied to the wafer W not only from above the wafer W held on the support ring 21 but also from the surroundings, the temperature of the wafer W can be kept more uniform.
　なお、今回開示された実施形態は全ての点で例示であって制限的なものではないと考えられるべきである。実に、上記した実施形態は多様な形態で具現され得る。また、上記の実施形態は、添付の請求の範囲およびその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 It should be noted that the embodiments disclosed this time are examples in all respects and are not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. In addition, the above-described embodiment may be omitted, replaced, or changed in various forms without departing from the scope of the appended claims and the purpose thereof.
Ｇ　ゲートバルブ
Ｗ　ウエハ
１００　半導体製造システム
１０１　真空搬送室
１１０　制御装置
２００　第１の成膜装置
３００　エッチング装置
４００　測定装置
５００　第２の成膜装置
１０　処理容器
１２　温度制御部
１４　ガス導入口
１５　排気管
１６　ＡＰＣバルブ
１７　排気装置
２０　保持機構
２１　支持リング
２２　支持部
２３　駆動部
２６　支持部
２７　台座
２８　駆動部
３０　成膜機構
３１　成膜部
３１０　供給部
３１１　第１の供給口
３１２　排気口
３１３　第２の供給口
３２　支持部
３３　駆動部
４０　パージガス供給機構
５０　第１のガス供給機構
６０　第２のガス供給機構
６１　ガス供給源
７０　バルブ群 G Gate valve W Wafer 100 Semiconductor manufacturing system 101 Vacuum transfer chamber 110 Control device 200 First film forming device 300 Etching device 400 Measuring device 500 Second film forming device 10 Processing container 12 Temperature control unit 14 Gas inlet 15 Exhaust pipe 16 APC valve 17 Exhaust device 20 Holding mechanism 21 Support ring 22 Support part 23 Drive part 26 Support part 27 Pedestal 28 Drive part 30 Film formation mechanism 31 Film formation part 310 Supply part 311 First supply port 312 Exhaust port 313 Second Supply port 32 Support unit 33 Drive unit 40 Purge gas supply mechanism 50 First gas supply mechanism 60 Second gas supply mechanism 61 Gas supply source 70 Valve group

Claims (12)

  1. 　処理容器と、
    　前記処理容器内に配置された基板の周縁を支持する支持リングと、
    　材料ガスを供給する複数の供給部を有し、素子が形成される前記基板の面の裏面に向かってそれぞれの前記供給部から前記材料ガスを供給することにより、前記裏面に成膜を行う成膜部と、
    　それぞれの前記供給部からの前記材料ガスの供給および供給停止を独立に制御する制御部と
    を備える成膜装置。     Processing container and
    A support ring that supports the peripheral edge of the substrate arranged in the processing container, and
    A film is formed on the back surface by supplying the material gas from each of the supply units toward the back surface of the surface of the substrate on which the element is formed, which has a plurality of supply units for supplying the material gas. Membrane and
    A film forming apparatus including a control unit that independently controls the supply and stop of supply of the material gas from each of the supply units.
  2. 　前記成膜部は、前記処理容器内で前記基板に対して相対的に移動する請求項１に記載の成膜装置。 The film forming apparatus according to claim 1, wherein the film forming section moves relative to the substrate in the processing container.
  3. 　前記基板は、略円板状であり、
    　複数の前記供給部は、前記支持リングに保持された前記基板の下方に、前記基板の径方向に並べて配置されており、
    　前記成膜装置は、
    　前記成膜部を支持し、前記基板の中心軸を中心として前記成膜部を回転させる回転機構を備える請求項２に記載の成膜装置。     The substrate has a substantially disk shape.
    The plurality of supply units are arranged side by side in the radial direction of the substrate below the substrate held by the support ring.
    The film forming apparatus is
    The film forming apparatus according to claim 2, further comprising a rotation mechanism that supports the film forming portion and rotates the film forming portion around a central axis of the substrate.
  4. 　前記基板は、略円板状であり、
    　複数の前記供給部は、前記基板の前記裏面の下方に、前記基板の径方向に並べて配置されており、
    　前記成膜装置は、
    　前記基板の中心軸を中心として前記支持リングを回転させる回転機構を備える請求項２に記載の成膜装置。     The substrate has a substantially disk shape.
    The plurality of supply units are arranged below the back surface of the substrate so as to be arranged in the radial direction of the substrate.
    The film forming apparatus is
    The film forming apparatus according to claim 2, further comprising a rotation mechanism for rotating the support ring about the central axis of the substrate.
  5. 　それぞれの前記供給部は、
    　前記材料ガスを前記基板の前記裏面に供給する供給口と、
    　前記供給口に隣接する排気口と
    を有し、
    　それぞれの前記供給部において、前記供給口から前記基板の前記裏面に供給された前記材料ガスは、前記供給口に隣接する前記排気口を介して、前記供給口から前記材料ガスが供給される方向とは反対の方向に排気される請求項１から４のいずれか一項に記載の成膜装置。     Each said supply unit
    A supply port for supplying the material gas to the back surface of the substrate, and
    It has an exhaust port adjacent to the supply port, and has an exhaust port.
    In each of the supply units, the material gas supplied from the supply port to the back surface of the substrate is supplied from the supply port through the exhaust port adjacent to the supply port. The film forming apparatus according to any one of claims 1 to 4, which is exhausted in the opposite direction to the above.
  6. 　それぞれの前記供給部において、前記供給口は、前記供給口に隣接する前記排気口を囲むように前記成膜部に形成されている請求項５に記載の成膜装置。 The film forming apparatus according to claim 5, wherein in each of the supply sections, the supply port is formed in the film forming section so as to surround the exhaust port adjacent to the supply port.
  7. 　前記成膜部は、
    　複数の前記供給部を囲むように形成され、それぞれの前記供給部から前記材料ガスが供給される方向と同じ方向にパージガスを供給する第１のパージガス供給口を備える請求項６に記載の成膜装置。     The film-forming portion is
    The film formation according to claim 6, further comprising a first purge gas supply port formed so as to surround the plurality of supply portions and supplying purge gas in the same direction as the material gas is supplied from each of the supply portions. apparatus.
  8. 　前記基板が前記支持リングによって支持されている状態で、素子が形成される前記基板の面にパージガスを供給する第２のパージガス供給口を備える請求項１から７のいずれか一項に記載の成膜装置。 The result according to any one of claims 1 to 7, further comprising a second purge gas supply port for supplying purge gas to the surface of the substrate on which the element is formed in a state where the substrate is supported by the support ring. Membrane device.
  9. 　それぞれの前記供給部には、前記材料ガスをプラズマ化するプラズマ生成部が設けられ、
    　前記基板の前記裏面には、前記プラズマ生成部によって生成されたプラズマに含まれる活性種が供給される請求項１から８のいずれか一項に記載の成膜装置。     Each of the supply units is provided with a plasma generation unit that turns the material gas into plasma.
    The film forming apparatus according to any one of claims 1 to 8, wherein an active species contained in the plasma generated by the plasma generating unit is supplied to the back surface of the substrate.
  10. 　前記成膜部には、温度制御された熱媒体が流れる流路が形成されている請求項１から９のいずれか一項に記載の成膜装置。 The film forming apparatus according to any one of claims 1 to 9, wherein a flow path through which a temperature-controlled heat medium flows is formed in the film forming section.
  11. 　処理容器内において基板の周縁を支持する工程と、
    　素子が形成される前記基板の面の裏面に向かって複数の供給部のそれぞれから供給される材料ガスの供給および供給停止を独立に制御することにより、前記裏面に成膜を行う工程と
    を含む成膜方法。     The process of supporting the peripheral edge of the substrate in the processing container,
    This includes a step of forming a film on the back surface by independently controlling the supply and stop of supply of the material gas supplied from each of the plurality of supply units toward the back surface of the surface of the substrate on which the element is formed. Film formation method.
  12. 　基板の高さの分布を測定する測定装置と、
    　前記測定装置によって測定された高さの分布から前記基板に加わっている応力を低減する成膜パターンを算出する算出装置と、
    　前記算出装置によって算出された成膜パターンに従って、素子が形成された前記基板の面の裏面に成膜を行う成膜装置と
    を備え、
    　前記成膜装置は、
    　処理容器と、
    　前記処理容器内に配置された前記基板の周縁を支持する支持リングと、
    　材料ガスを供給する複数の供給部を有し、前記基板の前記裏面に向かってそれぞれの前記供給部から前記材料ガスを供給することにより、前記裏面に成膜を行う成膜部と、
    　それぞれの前記供給部からの前記材料ガスの供給および供給停止を独立に制御する制御部と
    を備える成膜システム。     A measuring device that measures the height distribution of the substrate,
    A calculation device that calculates a film formation pattern that reduces the stress applied to the substrate from the height distribution measured by the measurement device, and a calculation device.
    A film forming apparatus for forming a film on the back surface of the substrate on which the element is formed is provided according to the film forming pattern calculated by the calculating apparatus.
    The film forming apparatus is
    Processing container and
    A support ring that supports the peripheral edge of the substrate arranged in the processing container, and
    A film forming section having a plurality of supply sections for supplying the material gas and forming a film on the back surface by supplying the material gas from the respective supply sections toward the back surface of the substrate.
    A film forming system including a control unit that independently controls the supply and stop of supply of the material gas from each of the supply units.
PCT/JP2020/012073 2019-03-27 2020-03-18 Film-forming device, film-forming method, and film-forming system WO2020196179A1 (en)

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Publication number Priority date Publication date Assignee Title
DE112021004413T5 (en) 2020-09-23 2023-06-15 Rohm Co. Ltd. Semiconductor device, semiconductor module, motor driving device and vehicle
JP2023096874A (en) * 2021-12-27 2023-07-07 東京エレクトロン株式会社 Substrate processing method and substrate processing system

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JPH07273029A (en) * 1994-04-01 1995-10-20 Nippon Steel Corp Compound semiconductor substrate
JPH0936050A (en) * 1995-07-25 1997-02-07 Mitsubishi Electric Corp Normal pressure cvd device
JP2004134631A (en) * 2002-10-11 2004-04-30 Matsushita Electric Ind Co Ltd Lamp heat treatment device
JP2015525302A (en) * 2012-06-20 2015-09-03 エムティーエスナノテック株式会社Ｍｔｓ Ｎａｎｏｔｅｃｈ Ｉｎｃ． Atomic layer deposition apparatus and method
KR20180017676A (en) * 2016-08-10 2018-02-21 주식회사 테스 Thin film deposition apparatus

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JPH07273029A (en) * 1994-04-01 1995-10-20 Nippon Steel Corp Compound semiconductor substrate
JPH0936050A (en) * 1995-07-25 1997-02-07 Mitsubishi Electric Corp Normal pressure cvd device
JP2004134631A (en) * 2002-10-11 2004-04-30 Matsushita Electric Ind Co Ltd Lamp heat treatment device
JP2015525302A (en) * 2012-06-20 2015-09-03 エムティーエスナノテック株式会社Ｍｔｓ Ｎａｎｏｔｅｃｈ Ｉｎｃ． Atomic layer deposition apparatus and method
KR20180017676A (en) * 2016-08-10 2018-02-21 주식회사 테스 Thin film deposition apparatus

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