WO2020189373A1 - Semiconductor device production method, substrate processing device, and program - Google Patents
Semiconductor device production method, substrate processing device, and program Download PDFInfo
- Publication number
- WO2020189373A1 WO2020189373A1 PCT/JP2020/010022 JP2020010022W WO2020189373A1 WO 2020189373 A1 WO2020189373 A1 WO 2020189373A1 JP 2020010022 W JP2020010022 W JP 2020010022W WO 2020189373 A1 WO2020189373 A1 WO 2020189373A1
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- WIPO (PCT)
- Prior art keywords
- gas
- film
- processing
- substrate
- gas supply
- Prior art date
Links
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- 239000011261 inert gas Substances 0.000 description 14
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- OYMJNIHGVDEDFX-UHFFFAOYSA-J molybdenum tetrachloride Chemical compound Cl[Mo](Cl)(Cl)Cl OYMJNIHGVDEDFX-UHFFFAOYSA-J 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 239000005049 silicon tetrachloride Substances 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Definitions
- the present disclosure relates to a semiconductor device manufacturing method, a substrate processing device, and a program.
- Patent Document 1 In recent years, with the increasing integration and high performance of semiconductor devices, various types of metal films have been used to manufacture semiconductor devices having a three-dimensional structure (see, for example, Patent Document 1 and Patent Document 2).
- a tungsten film (W film) or the like is used for the control gate of the NAND flash memory, which is an example of a semiconductor device having a three-dimensional structure.
- the resistance of this W film has a large effect on the device characteristics, and a low resistance film is required.
- a second treatment gas containing the second element is supplied to the membrane containing the first element, the first element is removed from the membrane containing the first element, and the membrane containing the second element is modified.
- FIG. 2 is a schematic cross-sectional view which shows the outline of the vertical processing furnace of a substrate processing apparatus.
- FIG. 2 is a schematic cross-sectional view taken along the line AA in FIG.
- It is a schematic block diagram of the controller of a board processing apparatus, and is the figure which shows the control system of a controller by a block diagram.
- It is a flow chart which shows the operation of a substrate processing apparatus.
- It is a flow chart which shows the operation of the 1st film formation process.
- It is a figure which shows the timing of gas supply in the 1st film formation process.
- It is a flow chart which shows the operation of the 2nd film formation process.
- It is a figure which shows the timing of gas supply in the 3rd film formation process.
- It is a figure which shows the effect of this technology.
- the substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating means (heating mechanism, heating system).
- the heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
- an outer tube 203 forming a reaction vessel is arranged concentrically with the heater 207.
- the outer tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- the shape of the outer tube 203 is formed into a cylindrical shape in which the upper end is closed and the lower end is open.
- a manifold (inlet flange) 209 is arranged concentrically with the outer tube 203.
- the manifold 209 is made of a metal material such as stainless steel (SUS).
- the shape of the manifold 209 is a cylindrical shape with open upper and lower ends.
- An O-ring 220a as a sealing member is provided between the upper end portion of the manifold 209 and the outer tube 203.
- the inner tube 204 constituting the reaction vessel is arranged inside the outer tube 203.
- the inner tube 204 is made of a heat-resistant material such as quartz or SiC.
- the shape of the inner tube 204 is a cylindrical shape in which the upper end is closed and the lower end is open.
- the processing container (reaction container) is mainly composed of the outer tube 203, the inner tube 204, and the manifold 209.
- a processing chamber 201 is formed in the hollow portion of the processing container (inside the inner tube 204).
- the processing chamber 201 is configured to accommodate the wafer 200 as a substrate in a state of being arranged in multiple stages in the vertical direction in a horizontal posture by a boat 217 described later.
- nozzles 410, 420, 430 are provided so as to penetrate the side wall of the manifold 209 and the inner tube 204.
- Gas supply pipes 310, 320, 330 are connected to the nozzles 410, 420, 430, respectively.
- the processing furnace 202 of the present embodiment is not limited to the above-described embodiment.
- the gas supply pipes 310, 320, and 330 are provided with mass flow controllers (MFCs) 312, 321 and 332, which are flow rate controllers (flow control units), in order from the upstream side. Further, the gas supply pipes 310, 320, and 330 are provided with valves 314, 324, and 334, which are on-off valves, respectively. Gas supply pipes 510, 520, and 530 for supplying the inert gas are connected to the downstream sides of the valves 314, 324 and 334 of the gas supply pipes 310, 320 and 330, respectively. The gas supply pipes 510, 520, and 530 are provided with MFC 512, 522, 532 and valves 514, 524, 534, respectively, in this order from the upstream side.
- MFCs mass flow controllers
- gas supply pipe 310-2 may be connected to the gas supply pipe 310.
- the gas supply pipe 310-2 is provided with an MFC 312-2 and a valve 314-2 from the upstream side.
- Nozzles 410, 420, 430 are connected to the tips of the gas supply pipes 310, 320, 330, respectively.
- the nozzles 410, 420, 430 are configured as L-shaped nozzles, and their horizontal portions are provided so as to penetrate the side wall of the manifold 209 and the inner tube 204.
- the vertical portions of the nozzles 410, 420, and 430 are arranged so as to project outward in the radial direction of the inner tube 204, and the inside of the spare chamber 201a having a channel shape (groove shape) formed so as to extend in the vertical direction. It is provided in the reserve chamber 201a toward the upper side (upper in the arrangement direction of the wafer 200) along the inner wall of the inner tube 204.
- the nozzles 410, 420, 430 are provided so as to extend from the lower region of the processing chamber 201 to the upper region of the processing chamber 201, and a plurality of gas supply holes 410a, 420a, 430a are provided at positions facing the wafer 200, respectively. Is provided.
- the processing gas is supplied to the wafer 200 from the gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430, respectively.
- a plurality of the gas supply holes 410a, 420a, and 430a are provided from the lower part to the upper part of the inner tube 204, each having the same opening area, and further provided with the same opening pitch.
- the gas supply holes 410a, 420a, 430a are not limited to the above-described form.
- the opening area may be gradually increased from the lower part to the upper part of the inner tube 204. This makes it possible to make the flow rate of the gas supplied from the gas supply holes 410a, 420a, 430a more uniform.
- a plurality of gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 are provided at height positions from the lower part to the upper part of the boat 217, which will be described later. Therefore, the processing gas supplied into the processing chamber 201 from the gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 is supplied to the entire area of the wafer 200 accommodated from the lower part to the upper part of the boat 217.
- the nozzles 410, 420, 430 may be provided so as to extend from the lower region to the upper region of the processing chamber 201, but are preferably provided so as to extend to the vicinity of the ceiling of the boat 217.
- a flush tank 322 is arranged between the MFC 321 and the valve 324 of the gas supply pipe 320.
- a gas containing a silicon (Si) element is supplied into the processing chamber 201 via the MFC 311, the valve 314, and the nozzle 410.
- a silane-based gas can be used as the first treatment gas.
- the silane-based gas is a gas containing silicon (Si) and hydrogen (H) and not containing halogen.
- monosilane (SiH 4 ) gas can be used.
- SiH 4 acts as a film-forming gas for forming the first film.
- the gas supply pipe 310-2 contains a silicon (Si) element and is different from the first treatment gas (also referred to as the first second treatment gas). Is supplied into the processing chamber 201 via the MFC 312-2, the valve 314-2, and the nozzle 420.
- the treatment gas different from the first treatment gas is, for example, a gas containing silicon (Si) and hydrogen and containing halogen. More specifically, the first processing gas, when the SiH 4 gas, different process gas from the first process gas, hexachlorodisilane (HCDS) gas is used.
- HCDS hexachlorodisilane
- a raw material gas (metal-containing gas) containing a metal element is supplied into the processing chamber 201 as a second processing gas via the MFC 322, the valve 324, and the nozzle 420.
- the second treatment gas for example, tungsten hexafluoride (WF 6 ) containing tungsten (W) as a metal element and as a halogen-based raw material (halide, halogen-based tungsten raw material) is used.
- the reaction gas as the third processing gas is supplied into the processing chamber 201 via the MFC 332, the valve 334, and the nozzle 430.
- the reaction gas for example, hydrogen (H 2 ) gas as an H-containing gas containing hydrogen (H) can be used.
- nitrogen (N 2 ) gas as an inert gas is discharged into the processing chamber via MFC512,522,532, valves 514,524,534, and nozzles 410,420,430, respectively. It is supplied in 201.
- N 2 gas used as the inert gas
- the inert gas for example, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenon other than N 2 gas will be described.
- a rare gas such as (Xe) gas may be used.
- the gas supply section is mainly composed of gas supply pipes 310, 320, 330, MFC 311, 322, 332, valves 314, 324, 334, and nozzles 410, 420, 430, but only the nozzles 410, 420, 430 are gas. You can think of it as a supply unit.
- the first treated gas supply section is mainly composed of the gas supply pipe 310, the MFC311 and the valve 314, but only the nozzle 410 is considered as the first treated gas supply section. You may.
- the second treated gas supply section is mainly composed of the gas supply pipe 320, the MFC 322, and the valve 324, but only the nozzle 420 is the second treated gas supply section. You may consider including it in.
- the flash tank 322 may be included in the second processing gas supply unit.
- the reaction gas is flowed from the gas supply pipe 330, the gas supply pipe 330, the MFC 332, and the valve 334 mainly form a third processing gas supply unit (reaction gas supply unit), but only the nozzle 430 is the third. It may be included in the processing gas supply unit.
- the reaction gas supply unit can also be referred to as a nitrogen-containing gas supply unit.
- the inert gas supply unit is mainly composed of gas supply pipes 510, 520, 530, MFC 512, 522, 532, and valves 514, 524, 534.
- the method of gas supply in the present embodiment is the nozzles 410, 420, arranged in the spare chamber 201a in the annular vertically long space defined by the inner wall of the inner tube 204 and the ends of the plurality of wafers 200.
- Gas is transported via 430.
- gas is ejected into the inner tube 204 from a plurality of gas supply holes 410a, 420a, 430a provided at positions facing the wafers of the nozzles 410, 420, 430. More specifically, the gas supply hole 410a of the nozzle 410, the gas supply hole 420a of the nozzle 420, and the gas supply hole 430a of the nozzle 430 eject gas or the like in a direction parallel to the surface of the wafer 200.
- the exhaust hole (exhaust port) 204a is a through hole formed at a position facing the nozzles 410, 420, 430 on the side wall of the inner tube 204, and is, for example, a slit-shaped through hole formed elongated in the vertical direction. Is.
- the gas supplied into the processing chamber 201 from the gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 and flowing on the surface of the wafer 200 passes through the exhaust holes 204a into the inner tube 204 and the outer tube 203. It flows into the exhaust passage 206 formed by the gaps formed between them. Then, the gas that has flowed into the exhaust passage 206 flows into the exhaust pipe 231 and is discharged to the outside of the processing furnace 202.
- the exhaust holes 204a are provided at positions facing the side surfaces of the plurality of wafers 200, and the gas supplied from the gas supply holes 410a, 420a, 430a to the vicinity of the wafers 200 in the processing chamber 201 faces in the horizontal direction. Then, it flows into the exhaust passage 206 through the exhaust hole 204a.
- the exhaust hole 204a is not limited to the case where it is configured as a slit-shaped through hole, and may be configured by a plurality of holes.
- the manifold 209 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201.
- a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201
- an APC (Auto Pressure Controller) valve 243 and a vacuum pump as a vacuum exhaust device. 246 is connected.
- the APC valve 243 can perform vacuum exhaust and vacuum exhaust stop in the processing chamber 201 by opening and closing the valve with the vacuum pump 246 operating, and further, the valve with the vacuum pump 246 operating. By adjusting the opening degree, the pressure in the processing chamber 201 can be adjusted by adjusting the exhaust conductance.
- the exhaust section is mainly composed of the exhaust hole 204a, the exhaust passage 206, the exhaust pipe 2311, the APC valve 243, and the pressure sensor 245. At least the exhaust port 204a may be considered as an exhaust unit.
- the vacuum pump 246 may be included in the exhaust unit.
- a seal cap 219 is provided as a furnace palate body that can airtightly close the lower end opening of the manifold 209.
- the seal cap 219 is configured to come into contact with the lower end of the manifold 209 from the lower side in the vertical direction.
- the seal cap 219 is made of a metal material such as SUS.
- the shape of the seal cap 219 is formed in a disk shape.
- An O-ring 220b as a sealing member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the seal cap 219.
- a rotation mechanism 267 for rotating the boat 217 accommodating the wafer 200 is installed on the opposite side of the processing chamber 201 in the seal cap 219.
- the rotating shaft 255 of the rotating mechanism 267 penetrates the seal cap 219 and is connected to the boat 217.
- the rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217.
- the seal cap 219 is configured to be raised and lowered in the vertical direction by a boat elevator 115 as a raising and lowering mechanism vertically installed outside the outer tube 203.
- the boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by raising and lowering the seal cap 219.
- the boat elevator 115 is configured as a transport device (convey mechanism) for transporting the wafers 200 housed in the boat 217 and the boat 217 into and out of the processing chamber 201.
- the boat 217 as a substrate support is configured so that a plurality of wafers, for example, 1 to 200 wafers 200, can be arranged vertically at intervals in a horizontal position and centered on each other. There is.
- the boat 217 is made of a heat resistant material such as quartz or SiC.
- a heat insulating plate 218 made of a heat-resistant material such as quartz or SiC is supported in a horizontal posture in multiple stages (not shown). With this configuration, the heat from the heater 207 is less likely to be transferred to the seal cap 219 side.
- this embodiment is not limited to the above-described embodiment.
- a heat insulating cylinder configured as a tubular member made of a heat-resistant material such as quartz or SiC may be provided.
- a temperature sensor 263 as a temperature detector is installed in the inner tube 204, and the amount of electricity supplied to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263.
- the temperature in the processing chamber 201 is configured to have a desired temperature distribution.
- the temperature sensor 263 is L-shaped like the nozzles 410, 420 and 430, and is provided along the inner wall of the inner tube 204.
- the controller 121 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.
- the RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus.
- An input / output device 122 configured as, for example, a touch panel is connected to the controller 121.
- the storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program for controlling the operation of the substrate processing device, a process recipe in which procedures and conditions of a method for manufacturing a semiconductor device to be described later are described, and the like are readablely stored.
- the process recipes are combined so that the controller 121 can execute each step (each step) in the method for manufacturing a semiconductor device described later and obtain a predetermined result, and functions as a program.
- the process recipe, control program, etc. are collectively referred to as a program.
- the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.
- the I / O port 121d includes the above-mentioned MFC 312, 321, 332, 521, 522, 532, 312-2, valve 314, 324, 334, 514, 524, 534, 314-2, pressure sensor 245, APC valve 243, A vacuum pump 246, a heater 207, a temperature sensor 263, a rotation mechanism 267, a boat elevator 115, and the like are connected in a controllable manner.
- the connection includes being electrically directly connected, being indirectly connected, and being configured to be able to directly or indirectly transmit and receive electrical signals.
- the CPU 121a is configured to read and execute a control program from the storage device 121c and read a recipe or the like from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like.
- the CPU 121a adjusts the flow rate of various gases by the MFC 312, 321, 332, 521, 522, 532, 312-2, and valves 314,324,334,514,524,534,314 according to the contents of the read recipe.
- the controller 121 is stored in an external storage device (for example, magnetic tape, magnetic disk such as flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) 123.
- the above-mentioned program can be configured by installing it on a computer.
- the storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium.
- the recording medium may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.
- the program may be provided to the computer by using a communication means such as the Internet or a dedicated line without using the external storage device 123.
- Substrate processing process As one step of the manufacturing process of the semiconductor device (device), an example of a step of forming a control gate film of a flash memory or a metal film constituting a word line electrode of a MOSFET on a wafer 200 is shown with reference to FIG. explain.
- the step of forming the metal film is performed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 121.
- a titanium nitride TiN film as a barrier metal that prevents fluorine (F) in the WF 6 gas, which will be described later, from diffusing into an insulating film (not shown) formed on the wafer 200 is formed. It is formed.
- a tungsten (W) film as a wordline electrode there is a problem that the resistivity of the W film is increased, and it is required to reduce the resistivity of the W film.
- FIGS. 6 and 8 represent time, and the vertical axis represents ON / OFF of each gas.
- the inside of the processing chamber 201 is evacuated by the vacuum pump 246 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 is always kept in operation until at least the processing on the wafer 200 is completed. Further, the inside of the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the amount of electricity supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heating in the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.
- the initial film forming step S300 includes at least the first film forming step S303 and the second film forming step S305 described below. Each step will be described with reference to FIGS. 5, 6, and 7.
- the first film forming step S303 includes at least the first processing gas supply step S303a, as shown by the solid lines in FIGS. 5 and 6. As shown by the broken lines in FIGS. 5 and 6, the purging steps S303b and S303d, the processing gas supply step S303c different from the first processing gas, and the determination step S303e may be included. Each process will be described below.
- First processing gas supply step S303a SiH 4 gas as the first processing gas is supplied to the wafer 200 in the processing chamber 201.
- SiH 4 gas supply The valve 314 is opened to allow SiH 4 gas, which is the first processing gas, to flow into the gas supply pipe 310.
- the flow rate of SiH 4 gas is adjusted by the MFC 312, is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410, and is exhausted from the exhaust pipe 231.
- the valve 514 is opened at the same time, and an inert gas such as N 2 gas is allowed to flow in the gas supply pipe 510.
- the flow rate of the N 2 gas flowing through the gas supply pipe 510 is adjusted by the MFC 512, is supplied into the processing chamber 201 together with the SiH 4 gas, and is exhausted from the exhaust pipe 231.
- the valves 524 and 534 are opened and the N 2 gas flows into the gas supply pipes 520 and 530.
- the N 2 gas is supplied into the processing chamber 201 via the gas supply pipes 320 and 330 and the nozzles 420 and 430, and is exhausted from the exhaust pipe 231.
- SiH 4 gas and N 2 gas are simultaneously supplied to the wafer 200.
- the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is set to, for example, 1 to 3990 Pa, preferably 5 to 2660 Pa, and more preferably 10 to 1500 Pa.
- the supply flow rate of the SiH 4 gas controlled by the MFC 312 is, for example, a flow rate within the range of 0.1 to 5 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm. Specifically, it is set to 1.0 slm.
- the supply flow rate of the N 2 gas controlled by the MFC 512, 522, 532 is, for example, 0.01 to 20 slm, preferably 0.1 to 10 slm, and more preferably 0.1 to 1 slm.
- a silicon (Si) film as a first film is formed on the wafer 200.
- the Si film is formed, for example, by forming two or more atomic layers, preferably 2 nm to 30 nm, and more preferably about 5 nm.
- the Si film as the first film may be continuously supplied with SiH 4 gas for vapor phase growth, or may be supplied with two Si-based gases alternately.
- SiH 4 gas for vapor phase growth
- two Si-based gases alternately supplying the two Si-based gases, it is possible to improve the uniformity of the Si film formed on the surface of the structure formed on the wafer 200. That is, it is possible to improve the coverage characteristics.
- the flow of the process of alternately supplying Si-based gas will be described with reference to FIGS. 5 and 6.
- a treatment gas supply step S303c different from the first treatment gas is performed, but between the first treatment gas supply step S303a and the treatment gas supply step S303c different from the first treatment gas. Then, the purging step S303b may be performed.
- N 2 gas as the inert gas is supplied into the processing chamber 201.
- the pressure adjustment in the processing chamber 201 is performed.
- the flow rate of the N 2 gas is, for example, 0.1 to 5 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm.
- the pressure at this time is adjusted so as to be the pressure at the time of supplying the first gas later.
- the pressure is, for example, a pressure in the range of 1 to 3990 Pa.
- the supply of N 2 gas is stopped or the flow rate is reduced.
- the N 2 gas may be supplied from all the nozzles existing in the processing chamber 201, or may be supplied from any one of the nozzles. Further, it may be configured to be supplied from a nozzle other than the nozzle used in the next step. Further, the N 2 gas supply is maintained for a predetermined time in a state where the N 2 gas supply is stopped or the flow rate is reduced, and the unreacted SiH 4 gas and by-products existing in the processing chamber 201 are removed.
- HCDS gas supply The valve 314-2 is opened to allow HCDS gas, which is a processing gas different from the first processing gas, to flow into the gas supply pipe 310.
- the flow rate of the HCDS gas is adjusted by the MFC 312-2, is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410, and is exhausted from the exhaust pipe 231.
- the valve 514 is opened at the same time, and an inert gas such as N 2 gas is allowed to flow in the gas supply pipe 510.
- the flow rate of the N 2 gas flowing through the gas supply pipe 510 is adjusted by the MFC 512, is supplied into the processing chamber 201 together with the HCDS gas, and is exhausted from the exhaust pipe 231.
- the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is set to, for example, 1 to 3990 Pa, preferably 5 to 2660 Pa, and more preferably 10 to 1500 Pa.
- the supply flow rate of the HCDS gas controlled by the MFC 312 is, for example, a flow rate within the range of 0.1 to 5 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm. Specifically, it is set to 1.0 slm.
- the supply flow rate of the N 2 gas controlled by the MFC 512, 522, 532 is, for example, 0.01 to 20 slm, preferably 0.1 to 10 slm, and more preferably 0.1 to 1 slm.
- a silicon (Si) film as a first film is formed on the wafer 200.
- purging step S303d Subsequently, the purging step S303d is performed. Since the purging step S303d is substantially the same as the purging step S303b described above, the description thereof will be omitted. By performing the purging step S303d, unreacted HCDS gas and by-products (HCl) existing in the processing chamber 201 are removed.
- the determination step S303e may be performed.
- a Si film is formed on the wafer 200.
- the purging step S304 may be performed between the first film forming step S303 and the second film forming step S305.
- purging step S304 Since the purging step S304 is substantially the same as the purging steps S303b and S303d described above, the description thereof will be omitted.
- the purging step it is possible to prevent the first treatment gas in the treatment chamber 201 and the treatment gas different from the first treatment gas from reacting with the metal-containing gas supplied in the second film forming step S305. It becomes possible to do. For example, it suppresses the reaction of HCDS gas and WF6 gas to form tungsten silicide (WSi).
- the second film forming step S305 includes at least the second processing gas supply step S305a as shown by the solid line in FIG. As shown by the broken line in FIG. 7, the purging step S305b and the determination step S305c may be included. Each process will be described below.
- the valve 324 is opened and the WF 6 gas, which is the second processing gas, flows into the gas supply pipe 320.
- the flow rate of the WF 6 is adjusted by the MFC 321 and is supplied into the processing chamber 201 from the gas supply hole 420a of the nozzle 420 and exhausted from the exhaust pipe 231.
- the valve 524 is opened at the same time to allow an inert gas such as N 2 gas to flow into the gas supply pipe 520.
- the flow rate of the N 2 gas flowing through the gas supply pipe 520 is adjusted by the MFC 522, is supplied into the processing chamber 201 together with the WF 6 gas, and is exhausted from the exhaust pipe 231.
- the valves 514 and 534 are opened to allow the N 2 gas to flow into the gas supply pipes 510 and 530.
- the N 2 gas is supplied into the processing chamber 201 via the gas supply pipes 310 and 330 and the nozzles 410 and 430, and is exhausted from the exhaust pipe 231.
- the WF 6 gas and the N 2 gas are simultaneously supplied to the wafer 200.
- the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is set to, for example, 1 to 3990 Pa, preferably 5 to 2660 Pa, and more preferably 10 to 1500 Pa.
- the supply flow rate of the WF 6 gas controlled by the MFC 312 is, for example, a flow rate within the range of 0.1 to 5 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm. Specifically, it is set to 1.0 slm.
- the supply flow rate of the N 2 gas controlled by the MFC 512, 522, 532 is, for example, 0.01 to 20 slm, preferably 0.1 to 10 slm, and more preferably 0.1 to 1 slm.
- the reaction of the following formula occurs when the WF 6 gas comes into contact with the silicon (Si) film as the first film formed on the wafer 200.
- 6Si + 4WF 6 ⁇ 6SiF 4 + 4W reaction occurs.
- the Si film as the first film formed on the wafer 200 is converted (changed) into the tungsten (W) film as the second film.
- the Si formed on the wafer 200 is desorbed (sublimated) as SiF 4 .
- W is replaced with the Si site on the wafer 200, and a W film is formed.
- a W film is formed on the wafer 200.
- a film in which W atoms (W crystals) are densely arranged is formed. Therefore, for example, a W film having a lower resistance than the W film formed by directly performing the third film forming step described later is formed on the barrier metal.
- the flash tank 322 is filled with WF 6 gas in advance and the WF 6 gas is supplied in a flash.
- WF 6 gas By supplying the WF 6 gas with a flash, it is possible to improve the efficiency of removing by-products generated in the reaction while supplying the WF 6 gas.
- the second processing gas supply step S305a may be performed intermittently in order to remove impurities (Si and fluorine (F)) in the W film. In other words, as shown in FIG. 7, the second processing gas supply step S305a and the purging step S305b may be repeated.
- purging step S305b Since the purging step S305b is a procedure substantially the same as the other purging steps described above, the description thereof will be omitted.
- the purging step S305b By performing the purging step S305b, by-products existing on the wafer 200 and in the processing chamber 201 are removed. This makes it possible to reduce the impurity concentration in the W film as the second film. That is, it is possible to reduce the resistivity of the W film.
- step S305c it is determined whether or not the second processing gas supply step S305a has been performed for a predetermined time (predetermined number of times). If it has been performed a predetermined number of times, a YES (Y) determination is made, the second film forming step S305 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the second film forming step S303 is performed again as a No (N) determination.
- the second film forming step S305 is performed.
- the third film forming step S400 is performed.
- the purge step S306 and the determination step S307 And may be done.
- purging step S306 Since the purging step S306 is a procedure substantially the same as the other purging steps described above, the description thereof will be omitted. By performing the purging step S306, it is possible to reduce the impurity concentration in the W film as the second film. That is, it is possible to reduce the resistivity of the W film.
- the determination step S307 determines whether or not these two steps have been performed a predetermined number of times when the first film formation step S303 and the second film formation step S305 are repeated. If it has been performed a predetermined number of times, a YES (Y) determination is made, the initial film forming step S300 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the initial film forming step S300 is re-performed as a No (N) determination.
- the main film forming step (third film forming step) S400 After the initial film forming step S300, the main film forming step (third film forming step) S400 is performed. In the main film forming step S400, at least the second treated gas supply step S403 and the third treated gas supply step S405 are performed as shown by the solid line in FIG. In order to improve the film characteristics of the main film formed on the wafer 200, the purging steps S404 and S406 and the determination step S407 shown by the broken lines in FIG. 4 may be performed. Each process will be described below.
- purging step S404 Next, the purging step S404 is performed. Since the purging step S404 is a procedure substantially the same as each of the above-mentioned purging steps, the description thereof will be omitted.
- H 2 gas supply Opening the valve 334, flow of H 2 gas is a reaction gas into the gas supply pipe 330.
- the flow rate of the H 2 gas is adjusted by the MFC 332, is supplied into the processing chamber 201 from the gas supply hole 430 a of the nozzle 430, and is exhausted from the exhaust pipe 231.
- H 2 gas is supplied to the wafer 200.
- opening the valve 534 flow the inert gas such as N 2 gas into the gas supply pipe 530.
- the flow rate of the N 2 gas flowing through the gas supply pipe 530 is adjusted by the MFC 532, is supplied into the processing chamber 201 together with the H 2 gas, and is exhausted from the exhaust pipe 231.
- the valves 514 and 524 are opened to allow the N 2 gas to flow into the gas supply pipes 510 and 520.
- the N 2 gas is supplied into the processing chamber 201 via the gas supply pipes 310 and 320 and the nozzles 410 and 420, and is exhausted from the exhaust pipe 231.
- the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is set to, for example, a pressure in the range of 1 to 3990 Pa.
- the supply flow rate of the H 2 gas controlled by the MFC 332 is, for example, a flow rate in the range of 0.1 to 50 slm.
- the supply flow rate of the N 2 gas controlled by the MFC 512, 522, 532 is, for example, a flow rate within the range of 0.1 to 20 slm.
- Time for supplying the H 2 gas to the wafer 200 is, for example, time within a range of 0.1 to 20 seconds.
- the temperature of the heater 207 is set to a temperature such that the temperature of the wafer 200 is in the range of, for example, 200 to 600 ° C.
- the only gases flowing in the processing chamber 201 are H 2 gas and N 2 gas, and by supplying the H 2 gas, a third film, for example, less than one atomic layer, is placed on the wafer 200 (surface base film).
- a W layer is formed as a metal layer having a thickness of about several atomic layers.
- the present invention is not limited to this, and the second treated gas supply step S403 and the third treated gas supply step are not limited to this. It may be configured so that S405 and S405 are performed at the same time.
- by simultaneously performing the second treatment gas supply step S403 and the third treatment gas supply step S405 these effects cannot be expected, but the film formation rate can be improved and the throughput can be improved. ..
- the purging step S406 is performed.
- the purging step S406 the unreacted H 2 gas remaining in the treatment chamber 201 or after contributing to the formation of the W layer is removed from the treatment chamber 201. Since the purging step S406 is a procedure substantially the same as each of the above-mentioned purging steps, the description thereof will be omitted.
- the determination step S407 is performed.
- the atmosphere adjusting step S308 and the substrate unloading step S309 are performed. Each will be described below.
- the N 2 gas is supplied into the process chamber 201 from the respective gas supply pipes 510, 520, and 530, is exhausted from the exhaust pipe 231.
- the N 2 gas acts as a purge gas, whereby the inside of the treatment chamber 201 is purged with the inert gas, and the gas and by-products remaining in the treatment chamber 201 are removed from the inside of the treatment chamber 201 (after-purge).
- the atmosphere in the treatment chamber 201 is replaced with the inert gas (replacement of the inert gas), and the pressure in the treatment chamber 201 is restored to normal pressure (return to atmospheric pressure).
- the W layer can be densely formed on the TiN film.
- the resistivity of the W film can be reduced. For example, as shown by ⁇ in FIG. 9, according to this technique, it is possible to reduce the resistivity as compared with the conventional technique ⁇ .
- C It is possible to improve the resistivity while improving the coverage.
- the above-mentioned first film means a film containing a first element as a main component
- a second film means a film containing a second element as a main component
- a third film means a second film. It means a film whose main component is an element.
- Si has been described as an example as the first element, there is a possibility that the technique of the present disclosure can be applied to any Group 14 element.
- germanium (Ge) is a metal element.
- the principal component in the present disclosure means a film having an atomic ratio of 50% or more in the film composition, and preferably a film constituting 90% or more. By increasing the atomic ratio of the film composition, the above-mentioned reaction efficiency is increased, and a desired film can be obtained.
- WF 6 is used as the second treatment gas, but the present invention is not limited to this, but titanium tetrachloride (TiCl 4 ), tantalum tetrachloride (TaCl 4 ), tungsten hexachloride (WCl 6 ), tungsten pentachloride (Titanium tetrachloride) ( Halogen-containing gas such as WCl 5 ), molybdenum tetrachloride (MoCl 4 ), silicon tetrachloride (SiCl 4 ), disilicon hexachloride (Si 2 Cl 6 , hexachlorodisilane (HCDSS)) and films formed using them. Can be applied to seeds.
- TiCl 4 titanium tetrachloride
- TaCl 4 tantalum tetrachloride
- WCl 6 tungsten hexachloride
- WCl 6 tungsten pentachloride
- TiCl 4 tungs
- the second treatment gas is a gas containing a halogen element and a metal element, it reacts with the Si film as the first film formed on the wafer 200, and the first film is modified into the second film.
- the halogen element is fluorine (F), chlorine (Cl), bromine (Br), and iodine (I).
- the metal elements include, for example, tungsten (W), titanium (Ti), molybdenum (Mo), ruthenium (Ru), aluminum (Al), hafnium (Hf), zirconium (Zr), lantern (La), and the like.
- SiH 4 is used as a Si-based raw material as a first treatment gas or a treatment gas different from the first treatment gas, but the present invention is not limited to this, and for example, disilane containing Si and H. (Si 2 H 6 ), trisdimethylaminosilane (Si H [N (CH 3 ) 2 ] 3 ) and the like may be used.
- the above-mentioned silane-based gas may be used as the first treatment gas, and a halosilane-based gas may be used as a treatment gas different from the first treatment gas.
- the halosilane-based gas is a silane-based gas having a halogen group.
- Halogen groups include halogen elements such as chlorine (Cl), fluorine (F), bromine (Br) and iodine (I).
- a raw material gas containing Si and Cl that is, a chlorosilane-based gas can be used as the halosilane-based gas.
- the chlorosilane-based gas acts as a Si source.
- chlorosilane-based gas for example, hexachlorodisilane (Si2Cl6, abbreviation: HCDS) gas, dichlorosilane (SiH2Cl2, abbreviation: DCS) gas, and the like can be used.
- HCDS hexachlorodisilane
- DCS dichlorosilane
- a Si-based raw material is used as the first treatment gas or a treatment gas different from the first treatment gas, but the raw material is not limited to Si and contains boron (B) and phosphorus (P).
- B boron
- P phosphorus
- a gas such as diborane (B 2 H 6 ) gas, phosphine (PH 3 ) gas, etc. can be applied.
- H 2 gas has been used as the third treatment gas, but the present invention is not limited to this, and any gas that can reduce the halogen-based material may be used.
- the configuration in which the film formation is performed using a batch type substrate processing apparatus that processes a plurality of substrates at one time is described, but the present disclosure is not limited to this, and one or several substrates are processed at a time. It can also be suitably applied to the case where film formation is performed using a single-wafer type substrate processing apparatus for processing a substrate.
- a substrate composed of other materials can be applied to the case of performing substrate processing using a material such as a ceramic substrate or a glass substrate.
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Abstract
The present invention is for forming a low-resistance film. The present invention comprises: a step in which a substrate is accommodated in a processing chamber; a first film forming step in which a first processing gas containing a first element is supplied to the substrate, and a first film containing the first element is formed on the substrate; and a second film forming step in which a second processing gas containing a second element is supplied to the film containing the first element, and the first element is removed from the film containing the first element to modify the same into a second film containing the second element.
Description
本開示は、半導体装置の製造方法、基板処理装置およびプログラムに関する。
The present disclosure relates to a semiconductor device manufacturing method, a substrate processing device, and a program.
近年、半導体装置の高集積化及び高性能化に伴い、様々な種類の金属膜が用いられ、３次元構造の半導体装置の製造が行なわれている（例えば特許文献１及び特許文献２参照）。
In recent years, with the increasing integration and high performance of semiconductor devices, various types of metal films have been used to manufacture semiconductor devices having a three-dimensional structure (see, for example, Patent Document 1 and Patent Document 2).
３次元構造の半導体装置の一例であるＮＡＮＤ型フラッシュメモリのコントロールゲートにはタングステン膜（Ｗ膜）等が用いられている。このＷ膜の抵抗がデバイス特性に与える影響は大きく、低抵抗な膜が要求される。
A tungsten film (W film) or the like is used for the control gate of the NAND flash memory, which is an example of a semiconductor device having a three-dimensional structure. The resistance of this W film has a large effect on the device characteristics, and a low resistance film is required.
本開示の一態様によれば、
基板を処理室に収容する工程と、
基板に第１の元素を含む第１処理ガスを供給して、基板に第１の元素を含む膜を形成する第１の成膜工程と、
第１の元素を含む膜に第２の元素を含む第２処理ガスを供給して、第１の元素を含む膜から第１の元素を除去して第２の元素を含む膜に改質する第２の成膜工程と、
を有する技術が提供される。 According to one aspect of the present disclosure
The process of accommodating the substrate in the processing chamber and
A first film forming step of supplying a first processing gas containing a first element to a substrate to form a film containing the first element on the substrate.
A second treatment gas containing the second element is supplied to the membrane containing the first element, the first element is removed from the membrane containing the first element, and the membrane containing the second element is modified. The second film formation process and
Technology is provided.
基板を処理室に収容する工程と、
基板に第１の元素を含む第１処理ガスを供給して、基板に第１の元素を含む膜を形成する第１の成膜工程と、
第１の元素を含む膜に第２の元素を含む第２処理ガスを供給して、第１の元素を含む膜から第１の元素を除去して第２の元素を含む膜に改質する第２の成膜工程と、
を有する技術が提供される。 According to one aspect of the present disclosure
The process of accommodating the substrate in the processing chamber and
A first film forming step of supplying a first processing gas containing a first element to a substrate to form a film containing the first element on the substrate.
A second treatment gas containing the second element is supplied to the membrane containing the first element, the first element is removed from the membrane containing the first element, and the membrane containing the second element is modified. The second film formation process and
Technology is provided.
本開示によれば、低抵抗な膜を形成することが可能となる。
According to the present disclosure, it is possible to form a film having low resistance.
＜実施形態＞
以下、実施形態の例について、図を参照しながら説明する。 <Embodiment>
Hereinafter, an example of the embodiment will be described with reference to the drawings.
以下、実施形態の例について、図を参照しながら説明する。 <Embodiment>
Hereinafter, an example of the embodiment will be described with reference to the drawings.
（１）基板処理装置の構成
基板処理装置１０は、加熱手段（加熱機構、加熱系）としてのヒータ２０７が設けられた処理炉２０２を備える。ヒータ２０７は円筒形状であり、保持板としてのヒータベース（図示せず）に支持されることにより垂直に据え付けられている。 (1) Configuration of substrate processing device
Thesubstrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating means (heating mechanism, heating system). The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
基板処理装置１０は、加熱手段（加熱機構、加熱系）としてのヒータ２０７が設けられた処理炉２０２を備える。ヒータ２０７は円筒形状であり、保持板としてのヒータベース（図示せず）に支持されることにより垂直に据え付けられている。 (1) Configuration of substrate processing device
The
ヒータ２０７の内側には、ヒータ２０７と同心円状に反応容器（処理容器）を構成するアウタチューブ２０３が配設されている。アウタチューブ２０３は、例えば石英（ＳｉＯ２）、炭化シリコン（ＳｉＣ）などの耐熱性材料で構成される。アウタチューブ２０３の形状は、上端が閉塞し下端が開口した円筒形状に形成されている。アウタチューブ２０３の下方には、アウタチューブ２０３と同心円状に、マニホールド（インレットフランジ）２０９が配設されている。マニホールド２０９は、例えばステンレス（ＳＵＳ）などの金属材料で構成される。マニホールド２０９の形状は、上端及び下端が開口した円筒形状に形成されている。マニホールド２０９の上端部と、アウタチューブ２０３との間には、シール部材としてのＯリング２２０ａが設けられている。マニホールド２０９がヒータベースに支持されることにより、アウタチューブ２０３は垂直に据え付けられた状態となる。
Inside the heater 207, an outer tube 203 forming a reaction vessel (processing vessel) is arranged concentrically with the heater 207. The outer tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC). The shape of the outer tube 203 is formed into a cylindrical shape in which the upper end is closed and the lower end is open. Below the outer tube 203, a manifold (inlet flange) 209 is arranged concentrically with the outer tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS). The shape of the manifold 209 is a cylindrical shape with open upper and lower ends. An O-ring 220a as a sealing member is provided between the upper end portion of the manifold 209 and the outer tube 203. When the manifold 209 is supported by the heater base, the outer tube 203 is in a vertically installed state.
アウタチューブ２０３の内側には、反応容器を構成するインナチューブ２０４が配設されている。インナチューブ２０４は、例えば石英、ＳｉＣなどの耐熱性材料で構成される。インナチューブ２０４の形状は、上端が閉塞し下端が開口した円筒形状に形成されている。主に、アウタチューブ２０３と、インナチューブ２０４と、マニホールド２０９とにより処理容器（反応容器）が構成されている。処理容器の筒中空部（インナチューブ２０４の内側）には処理室２０１が形成されている。
Inside the outer tube 203, the inner tube 204 constituting the reaction vessel is arranged. The inner tube 204 is made of a heat-resistant material such as quartz or SiC. The shape of the inner tube 204 is a cylindrical shape in which the upper end is closed and the lower end is open. The processing container (reaction container) is mainly composed of the outer tube 203, the inner tube 204, and the manifold 209. A processing chamber 201 is formed in the hollow portion of the processing container (inside the inner tube 204).
処理室２０１は、基板としてのウエハ２００を後述するボート２１７によって水平姿勢で鉛直方向に多段に配列した状態で収容可能に構成されている。
The processing chamber 201 is configured to accommodate the wafer 200 as a substrate in a state of being arranged in multiple stages in the vertical direction in a horizontal posture by a boat 217 described later.
処理室２０１内には、ノズル４１０，４２０，４３０がマニホールド２０９の側壁及びインナチューブ２０４を貫通するように設けられている。ノズル４１０，４２０，４３０には、ガス供給管３１０，３２０，３３０が、それぞれ接続されている。ただし、本実施形態の処理炉２０２は上述の形態に限定されない。
In the processing chamber 201, nozzles 410, 420, 430 are provided so as to penetrate the side wall of the manifold 209 and the inner tube 204. Gas supply pipes 310, 320, 330 are connected to the nozzles 410, 420, 430, respectively. However, the processing furnace 202 of the present embodiment is not limited to the above-described embodiment.
ガス供給管３１０，３２０，３３０には上流側から順に流量制御器（流量制御部）であるマスフローコントローラ（ＭＦＣ）３１２，３２１，３３２がそれぞれ設けられている。また、ガス供給管３１０，３２０，３３０には、開閉弁であるバルブ３１４，３２４，３３４がそれぞれ設けられている。ガス供給管３１０，３２０，３３０のバルブ３１４，３２４，３３４の下流側には、不活性ガスを供給するガス供給管５１０，５２０，５３０がそれぞれ接続されている。ガス供給管５１０，５２０，５３０には、上流側から順に、ＭＦＣ５１２，５２２，５３２及びバルブ５１４，５２４，５３４がそれぞれ設けられている。
The gas supply pipes 310, 320, and 330 are provided with mass flow controllers (MFCs) 312, 321 and 332, which are flow rate controllers (flow control units), in order from the upstream side. Further, the gas supply pipes 310, 320, and 330 are provided with valves 314, 324, and 334, which are on-off valves, respectively. Gas supply pipes 510, 520, and 530 for supplying the inert gas are connected to the downstream sides of the valves 314, 324 and 334 of the gas supply pipes 310, 320 and 330, respectively. The gas supply pipes 510, 520, and 530 are provided with MFC 512, 522, 532 and valves 514, 524, 534, respectively, in this order from the upstream side.
また、ガス供給管３１０には、ガス供給管３１０－２が接続されていても良い。ガス供給管３１０－２には、上流側から、ＭＦＣ３１２－２、バルブ３１４－２が設けられている。
Further, the gas supply pipe 310-2 may be connected to the gas supply pipe 310. The gas supply pipe 310-2 is provided with an MFC 312-2 and a valve 314-2 from the upstream side.
ガス供給管３１０，３２０，３３０の先端部にはノズル４１０，４２０，４３０がそれぞれ連結接続されている。ノズル４１０，４２０，４３０は、Ｌ字型のノズルとして構成されており、その水平部はマニホールド２０９の側壁及びインナチューブ２０４を貫通するように設けられている。ノズル４１０，４２０，４３０の垂直部は、インナチューブ２０４の径方向外向きに突出して配置され、かつ鉛直方向に延在するように形成されているチャンネル形状（溝形状）の予備室２０１ａの内部に設けられており、予備室２０１ａ内にてインナチューブ２０４の内壁に沿って上方（ウエハ２００の配列方向上方）に向かって設けられている。
Nozzles 410, 420, 430 are connected to the tips of the gas supply pipes 310, 320, 330, respectively. The nozzles 410, 420, 430 are configured as L-shaped nozzles, and their horizontal portions are provided so as to penetrate the side wall of the manifold 209 and the inner tube 204. The vertical portions of the nozzles 410, 420, and 430 are arranged so as to project outward in the radial direction of the inner tube 204, and the inside of the spare chamber 201a having a channel shape (groove shape) formed so as to extend in the vertical direction. It is provided in the reserve chamber 201a toward the upper side (upper in the arrangement direction of the wafer 200) along the inner wall of the inner tube 204.
ノズル４１０，４２０，４３０は、処理室２０１の下部領域から処理室２０１の上部領域まで延在するように設けられており、ウエハ２００と対向する位置にそれぞれ複数のガス供給孔４１０ａ，４２０ａ，４３０ａが設けられている。これにより、ノズル４１０，４２０，４３０のガス供給孔４１０ａ，４２０ａ，４３０ａからそれぞれウエハ２００に処理ガスを供給する。このガス供給孔４１０ａ，４２０ａ，４３０ａは、インナチューブ２０４の下部から上部にわたって複数設けられ、それぞれ同一の開口面積を有し、さらに同一の開口ピッチで設けられている。ただし、ガス供給孔４１０ａ，４２０ａ，４３０ａは上述の形態に限定されない。例えば、インナチューブ２０４の下部から上部に向かって開口面積を徐々に大きくしてもよい。これにより、ガス供給孔４１０ａ，４２０ａ，４３０ａから供給されるガスの流量をより均一化することが可能となる。
The nozzles 410, 420, 430 are provided so as to extend from the lower region of the processing chamber 201 to the upper region of the processing chamber 201, and a plurality of gas supply holes 410a, 420a, 430a are provided at positions facing the wafer 200, respectively. Is provided. As a result, the processing gas is supplied to the wafer 200 from the gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430, respectively. A plurality of the gas supply holes 410a, 420a, and 430a are provided from the lower part to the upper part of the inner tube 204, each having the same opening area, and further provided with the same opening pitch. However, the gas supply holes 410a, 420a, 430a are not limited to the above-described form. For example, the opening area may be gradually increased from the lower part to the upper part of the inner tube 204. This makes it possible to make the flow rate of the gas supplied from the gas supply holes 410a, 420a, 430a more uniform.
ノズル４１０，４２０，４３０のガス供給孔４１０ａ，４２０ａ，４３０ａは、後述するボート２１７の下部から上部までの高さの位置に複数設けられている。そのため、ノズル４１０，４２０，４３０のガス供給孔４１０ａ，４２０ａ，４３０ａから処理室２０１内に供給された処理ガスは、ボート２１７の下部から上部までに収容されたウエハ２００の全域に供給される。ノズル４１０，４２０，４３０は、処理室２０１の下部領域から上部領域まで延在するように設けられていればよいが、ボート２１７の天井付近まで延在するように設けられていることが好ましい。
A plurality of gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 are provided at height positions from the lower part to the upper part of the boat 217, which will be described later. Therefore, the processing gas supplied into the processing chamber 201 from the gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 is supplied to the entire area of the wafer 200 accommodated from the lower part to the upper part of the boat 217. The nozzles 410, 420, 430 may be provided so as to extend from the lower region to the upper region of the processing chamber 201, but are preferably provided so as to extend to the vicinity of the ceiling of the boat 217.
ガス供給管３２０の、ＭＦＣ３２１とバルブ３２４の間には、フラッシュタンク３２２が配置される。
A flush tank 322 is arranged between the MFC 321 and the valve 324 of the gas supply pipe 320.
ガス供給管３１０からは、第１処理ガスとして、シリコン（Ｓｉ）元素を含むガスが、ＭＦＣ３１１、バルブ３１４、ノズル４１０を介して処理室２０１内に供給される。第１処理ガスとしては、シラン系ガスを用いることができる。シラン系ガスとは、シリコン（Ｓｉ）及び水素（Ｈ）を含み、ハロゲンを含まないガスである。具体的には、モノシラン（ＳｉＨ４）ガスを用いることができる。ＳｉＨ４は第１の膜を形成する成膜ガスとして作用する。なお、この様な第１処理ガスとして、他には、例えば、ジシラン（Ｓｉ２Ｈ６）が有る。
From the gas supply pipe 310, as the first processing gas, a gas containing a silicon (Si) element is supplied into the processing chamber 201 via the MFC 311, the valve 314, and the nozzle 410. A silane-based gas can be used as the first treatment gas. The silane-based gas is a gas containing silicon (Si) and hydrogen (H) and not containing halogen. Specifically, monosilane (SiH 4 ) gas can be used. SiH 4 acts as a film-forming gas for forming the first film. In addition, as such a first treatment gas, there is, for example, disilane (Si 2 H 6 ).
また、ガス供給管３１０－２が設けられている場合、ガス供給管３１０－２からは、シリコン（Ｓｉ）元素を含み第１処理ガスとは異なる処理ガス（第１の２処理ガスとも呼ぶ）が、ＭＦＣ３１２－２、バルブ３１４－２、ノズル４２０を介して処理室２０１内に供給される。第１処理ガスとは異なる処理ガスとしては、例えば、シリコン（Ｓｉ）及び水素を含み、ハロゲンを含むガスである。具体的には、第１処理ガスが、ＳｉＨ４ガスの場合、第１処理ガスとは異なる処理ガスは、ヘキサクロロジシラン（HCDS）ガスが用いられる。
When the gas supply pipe 310-2 is provided, the gas supply pipe 310-2 contains a silicon (Si) element and is different from the first treatment gas (also referred to as the first second treatment gas). Is supplied into the processing chamber 201 via the MFC 312-2, the valve 314-2, and the nozzle 420. The treatment gas different from the first treatment gas is, for example, a gas containing silicon (Si) and hydrogen and containing halogen. More specifically, the first processing gas, when the SiH 4 gas, different process gas from the first process gas, hexachlorodisilane (HCDS) gas is used.
ガス供給管３２０からは、第２処理ガスとして、金属元素を含む原料ガス（金属含有ガス）が、ＭＦＣ３２２、バルブ３２４、ノズル４２０を介して処理室２０１内に供給される。第２処理ガスとしては、例えば金属元素としてのタングステン（Ｗ）を含み、ハロゲン系原料（ハロゲン化物、ハロゲン系タングステン原料）としての六フッ化タングステン（ＷＦ６）が用いられる。
From the gas supply pipe 320, a raw material gas (metal-containing gas) containing a metal element is supplied into the processing chamber 201 as a second processing gas via the MFC 322, the valve 324, and the nozzle 420. As the second treatment gas, for example, tungsten hexafluoride (WF 6 ) containing tungsten (W) as a metal element and as a halogen-based raw material (halide, halogen-based tungsten raw material) is used.
ガス供給管３３０からは、第３処理ガスとして、反応ガスが、ＭＦＣ３３２、バルブ３３４、ノズル４３０を介して処理室２０１内に供給される。反応ガスとしては、例えば水素（Ｈ）を含むＨ含有ガスとしての例えば水素（Ｈ２）ガスを用いることができる。
From the gas supply pipe 330, the reaction gas as the third processing gas is supplied into the processing chamber 201 via the MFC 332, the valve 334, and the nozzle 430. As the reaction gas, for example, hydrogen (H 2 ) gas as an H-containing gas containing hydrogen (H) can be used.
ガス供給管５１０，５２０，５３０からは、不活性ガスとして、例えば窒素（Ｎ２）ガスが、それぞれＭＦＣ５１２，５２２，５３２、バルブ５１４，５２４，５３４、ノズル４１０，４２０，４３０を介して処理室２０１内に供給される。以下、不活性ガスとしてＮ２ガスを用いる例について説明するが、不活性ガスとしては、Ｎ２ガス以外に、例えば、アルゴン（Ａｒ）ガス、ヘリウム（Ｈｅ）ガス、ネオン（Ｎｅ）ガス、キセノン（Ｘｅ）ガス等の希ガスを用いてもよい。
From the gas supply pipes 510, 520, and 530, for example, nitrogen (N 2 ) gas as an inert gas is discharged into the processing chamber via MFC512,522,532, valves 514,524,534, and nozzles 410,420,430, respectively. It is supplied in 201. Hereinafter, an example in which N 2 gas is used as the inert gas will be described. As the inert gas, for example, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenon other than N 2 gas will be described. A rare gas such as (Xe) gas may be used.
主に、ガス供給管３１０，３２０，３３０、ＭＦＣ３１１，３２２，３３２、バルブ３１４，３２４，３３４、ノズル４１０，４２０，４３０によりガス供給部が構成されるが、ノズル４１０，４２０，４３０のみをガス供給部と考えてもよい。ガス供給管３１０から第１処理ガスを流す場合、主に、ガス供給管３１０、ＭＦＣ３１１、バルブ３１４により第１処理ガス供給部が構成されるが、ノズル４１０のみを第１処理ガス供給部と考えてもよい。また、ガス供給管３２０から第２処理ガスを流す場合、主に、ガス供給管３２０、ＭＦＣ３２２、バルブ３２４により第２処理ガス供給部が構成されるが、ノズル４２０のみを第２処理ガス供給部に含めて考えてもよい。また、フラッシュタンク３２２を第２処理ガス供給部に含めて考えても良い。また、ガス供給管３３０から反応ガスを流す場合、主に、ガス供給管３３０、ＭＦＣ３３２、バルブ３３４により第３処理ガス供給部（反応ガス供給部）が構成されるが、ノズル４３０のみを第３処理ガス供給部に含めて考えてもよい。ガス供給管３３０から反応ガスとして窒素含有ガスを供給する場合、反応ガス供給部を窒素含有ガス供給部と称することもできる。また、主に、ガス供給管５１０，５２０，５３０、ＭＦＣ５１２，５２２，５３２、バルブ５１４，５２４，５３４により不活性ガス供給部が構成される。
The gas supply section is mainly composed of gas supply pipes 310, 320, 330, MFC 311, 322, 332, valves 314, 324, 334, and nozzles 410, 420, 430, but only the nozzles 410, 420, 430 are gas. You can think of it as a supply unit. When the first treated gas flows from the gas supply pipe 310, the first treated gas supply section is mainly composed of the gas supply pipe 310, the MFC311 and the valve 314, but only the nozzle 410 is considered as the first treated gas supply section. You may. Further, when the second treated gas is flowed from the gas supply pipe 320, the second treated gas supply section is mainly composed of the gas supply pipe 320, the MFC 322, and the valve 324, but only the nozzle 420 is the second treated gas supply section. You may consider including it in. Further, the flash tank 322 may be included in the second processing gas supply unit. When the reaction gas is flowed from the gas supply pipe 330, the gas supply pipe 330, the MFC 332, and the valve 334 mainly form a third processing gas supply unit (reaction gas supply unit), but only the nozzle 430 is the third. It may be included in the processing gas supply unit. When a nitrogen-containing gas is supplied as a reaction gas from the gas supply pipe 330, the reaction gas supply unit can also be referred to as a nitrogen-containing gas supply unit. Further, the inert gas supply unit is mainly composed of gas supply pipes 510, 520, 530, MFC 512, 522, 532, and valves 514, 524, 534.
本実施形態におけるガス供給の方法は、インナチューブ２０４の内壁と、複数枚のウエハ２００の端部とで定義される円環状の縦長の空間内の予備室２０１ａ内に配置したノズル４１０，４２０，４３０を経由してガスを搬送している。そして、ノズル４１０，４２０，４３０のウエハと対向する位置に設けられた複数のガス供給孔４１０ａ，４２０ａ，４３０ａからインナチューブ２０４内にガスを噴出させている。より詳細には、ノズル４１０のガス供給孔４１０ａ、ノズル４２０のガス供給孔４２０ａ及びノズル４３０のガス供給孔４３０ａにより、ウエハ２００の表面と平行方向に向かってガス等を噴出させている。
The method of gas supply in the present embodiment is the nozzles 410, 420, arranged in the spare chamber 201a in the annular vertically long space defined by the inner wall of the inner tube 204 and the ends of the plurality of wafers 200. Gas is transported via 430. Then, gas is ejected into the inner tube 204 from a plurality of gas supply holes 410a, 420a, 430a provided at positions facing the wafers of the nozzles 410, 420, 430. More specifically, the gas supply hole 410a of the nozzle 410, the gas supply hole 420a of the nozzle 420, and the gas supply hole 430a of the nozzle 430 eject gas or the like in a direction parallel to the surface of the wafer 200.
排気孔（排気口）２０４ａは、インナチューブ２０４の側壁であってノズル４１０，４２０，４３０に対向した位置に形成された貫通孔であり、例えば、鉛直方向に細長く開設されたスリット状の貫通孔である。ノズル４１０，４２０，４３０のガス供給孔４１０ａ，４２０ａ，４３０ａから処理室２０１内に供給され、ウエハ２００の表面上を流れたガスは、排気孔２０４ａを介してインナチューブ２０４とアウタチューブ２０３との間に形成された隙間で構成された排気路２０６内に流れる。そして、排気路２０６内へと流れたガスは、排気管２３１内に流れ、処理炉２０２外へと排出される。
The exhaust hole (exhaust port) 204a is a through hole formed at a position facing the nozzles 410, 420, 430 on the side wall of the inner tube 204, and is, for example, a slit-shaped through hole formed elongated in the vertical direction. Is. The gas supplied into the processing chamber 201 from the gas supply holes 410a, 420a, 430a of the nozzles 410, 420, 430 and flowing on the surface of the wafer 200 passes through the exhaust holes 204a into the inner tube 204 and the outer tube 203. It flows into the exhaust passage 206 formed by the gaps formed between them. Then, the gas that has flowed into the exhaust passage 206 flows into the exhaust pipe 231 and is discharged to the outside of the processing furnace 202.
排気孔２０４ａは、複数のウエハ２００の側面と対向する位置に設けられており、ガス供給孔４１０ａ、４２０ａ、４３０ａから処理室２０１内のウエハ２００の近傍に供給されたガスは、水平方向に向かって流れた後、排気孔２０４ａを介して排気路２０６内へと流れる。排気孔２０４ａはスリット状の貫通孔として構成される場合に限らず、複数個の孔により構成されていてもよい。
The exhaust holes 204a are provided at positions facing the side surfaces of the plurality of wafers 200, and the gas supplied from the gas supply holes 410a, 420a, 430a to the vicinity of the wafers 200 in the processing chamber 201 faces in the horizontal direction. Then, it flows into the exhaust passage 206 through the exhaust hole 204a. The exhaust hole 204a is not limited to the case where it is configured as a slit-shaped through hole, and may be configured by a plurality of holes.
マニホールド２０９には、処理室２０１内の雰囲気を排気する排気管２３１が設けられている。排気管２３１には、上流側から順に、処理室２０１内の圧力を検出する圧力検出器（圧力検出部）としての圧力センサ２４５，ＡＰＣ（Ａｕｔｏ Ｐｒｅｓｓｕｒｅ Ｃｏｎｔｒｏｌｌｅｒ）バルブ２４３，真空排気装置としての真空ポンプ２４６が接続されている。ＡＰＣバルブ２４３は、真空ポンプ２４６を作動させた状態で弁を開閉することで、処理室２０１内の真空排気及び真空排気停止を行うことができ、更に、真空ポンプ２４６を作動させた状態で弁開度を調節することで、排気コンダクタンスを調整することにより、処理室２０１内の圧力を調整することができる。主に、排気孔２０４ａ，排気路２０６，排気管２３１，ＡＰＣバルブ２４３及び圧力センサ２４５により、排気部が構成される。少なくとも排気口２０４ａを排気部と考えても良い。真空ポンプ２４６を排気部に含めて考えてもよい。
The manifold 209 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201. In the exhaust pipe 231, in order from the upstream side, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201, an APC (Auto Pressure Controller) valve 243, and a vacuum pump as a vacuum exhaust device. 246 is connected. The APC valve 243 can perform vacuum exhaust and vacuum exhaust stop in the processing chamber 201 by opening and closing the valve with the vacuum pump 246 operating, and further, the valve with the vacuum pump 246 operating. By adjusting the opening degree, the pressure in the processing chamber 201 can be adjusted by adjusting the exhaust conductance. The exhaust section is mainly composed of the exhaust hole 204a, the exhaust passage 206, the exhaust pipe 2311, the APC valve 243, and the pressure sensor 245. At least the exhaust port 204a may be considered as an exhaust unit. The vacuum pump 246 may be included in the exhaust unit.
マニホールド２０９の下方には、マニホールド２０９の下端開口を気密に閉塞可能な炉口蓋体としてのシールキャップ２１９が設けられている。シールキャップ２１９は、マニホールド２０９の下端に鉛直方向下側から当接されるように構成されている。シールキャップ２１９は、例えばＳＵＳ等の金属材料で構成される。シールキャップ２１９の形状は、円盤状に形成されている。シールキャップ２１９の上面には、マニホールド２０９の下端と当接するシール部材としてのＯリング２２０ｂが設けられている。シールキャップ２１９における処理室２０１の反対側には、ウエハ２００を収容するボート２１７を回転させる回転機構２６７が設置されている。回転機構２６７の回転軸２５５は、シールキャップ２１９を貫通してボート２１７に接続されている。回転機構２６７は、ボート２１７を回転させることでウエハ２００を回転させるように構成されている。シールキャップ２１９は、アウタチューブ２０３の外部に垂直に設置された昇降機構としてのボートエレベータ１１５によって鉛直方向に昇降されるように構成されている。ボートエレベータ１１５は、シールキャップ２１９を昇降させることで、ボート２１７を処理室２０１内外に搬入及び搬出することが可能なように構成されている。ボートエレベータ１１５は、ボート２１７及びボート２１７に収容されたウエハ２００を、処理室２０１内外に搬送する搬送装置（搬送機構）として構成されている。
Below the manifold 209, a seal cap 219 is provided as a furnace palate body that can airtightly close the lower end opening of the manifold 209. The seal cap 219 is configured to come into contact with the lower end of the manifold 209 from the lower side in the vertical direction. The seal cap 219 is made of a metal material such as SUS. The shape of the seal cap 219 is formed in a disk shape. An O-ring 220b as a sealing member that comes into contact with the lower end of the manifold 209 is provided on the upper surface of the seal cap 219. On the opposite side of the processing chamber 201 in the seal cap 219, a rotation mechanism 267 for rotating the boat 217 accommodating the wafer 200 is installed. The rotating shaft 255 of the rotating mechanism 267 penetrates the seal cap 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be raised and lowered in the vertical direction by a boat elevator 115 as a raising and lowering mechanism vertically installed outside the outer tube 203. The boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by raising and lowering the seal cap 219. The boat elevator 115 is configured as a transport device (convey mechanism) for transporting the wafers 200 housed in the boat 217 and the boat 217 into and out of the processing chamber 201.
基板支持具としてのボート２１７は、複数枚、例えば１～２００枚のウエハ２００を、水平姿勢で、かつ、互いに中心を揃えた状態で鉛直方向に間隔を空けて配列可能なように構成されている。ボート２１７は、例えば石英やＳｉＣ等の耐熱性材料で形成される。ボート２１７の下部には、例えば石英やＳｉＣ等の耐熱性材料で形成される断熱板２１８が水平姿勢で多段（図示せず）に支持されている。この構成により、ヒータ２０７からの熱がシールキャップ２１９側に伝わりにくくなっている。ただし、本実施形態は上述の形態に限定されない。例えば、ボート２１７の下部に断熱板２１８を設けずに、石英やＳｉＣ等の耐熱性材料からなる筒状の部材として構成された断熱筒を設けてもよい。
The boat 217 as a substrate support is configured so that a plurality of wafers, for example, 1 to 200 wafers 200, can be arranged vertically at intervals in a horizontal position and centered on each other. There is. The boat 217 is made of a heat resistant material such as quartz or SiC. At the lower part of the boat 217, a heat insulating plate 218 made of a heat-resistant material such as quartz or SiC is supported in a horizontal posture in multiple stages (not shown). With this configuration, the heat from the heater 207 is less likely to be transferred to the seal cap 219 side. However, this embodiment is not limited to the above-described embodiment. For example, instead of providing the heat insulating plate 218 at the lower part of the boat 217, a heat insulating cylinder configured as a tubular member made of a heat-resistant material such as quartz or SiC may be provided.
図２に示すように、インナチューブ２０４内には温度検出器としての温度センサ２６３が設置されており、温度センサ２６３により検出された温度情報に基づきヒータ２０７への通電量を調整することで、処理室２０１内の温度が所望の温度分布となるように構成されている。温度センサ２６３は、ノズル４１０，４２０及び４３０と同様にＬ字型に構成されており、インナチューブ２０４の内壁に沿って設けられている。
As shown in FIG. 2, a temperature sensor 263 as a temperature detector is installed in the inner tube 204, and the amount of electricity supplied to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263. The temperature in the processing chamber 201 is configured to have a desired temperature distribution. The temperature sensor 263 is L-shaped like the nozzles 410, 420 and 430, and is provided along the inner wall of the inner tube 204.
図３に示すように、制御部（制御手段）であるコントローラ１２１は、ＣＰＵ（Ｃｅｎｔｒａｌ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ）１２１ａ，ＲＡＭ（Ｒａｎｄｏｍ Ａｃｃｅｓｓ Ｍｅｍｏｒｙ）１２１ｂ，記憶装置１２１ｃ，Ｉ／Ｏポート１２１ｄを備えたコンピュータとして構成されている。ＲＡＭ１２１ｂ，記憶装置１２１ｃ，Ｉ／Ｏポート１２１ｄは、内部バスを介して、ＣＰＵ１２１ａとデータ交換可能なように構成されている。コントローラ１２１には、例えばタッチパネル等として構成された入出力装置１２２が接続されている。
As shown in FIG. 3, the controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. Has been done. The RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus. An input / output device 122 configured as, for example, a touch panel is connected to the controller 121.
記憶装置１２１ｃは、例えばフラッシュメモリ、ＨＤＤ（Ｈａｒｄ Ｄｉｓｋ Ｄｒｉｖｅ）等で構成されている。記憶装置１２１ｃ内には、基板処理装置の動作を制御する制御プログラム、後述する半導体装置の製造方法の手順や条件などが記載されたプロセスレシピなどが、読み出し可能に格納されている。プロセスレシピは、後述する半導体装置の製造方法における各工程（各ステップ）をコントローラ１２１に実行させ、所定の結果を得ることができるように組み合わされたものであり、プログラムとして機能する。以下、このプロセスレシピ、制御プログラム等を総称して、単に、プログラムともいう。本開示においてプログラムという言葉を用いた場合は、プロセスレシピ単体のみを含む場合、制御プログラム単体のみを含む場合、または、プロセスレシピ及び制御プログラムの組み合わせを含む場合がある。ＲＡＭ１２１ｂは、ＣＰＵ１２１ａによって読み出されたプログラムやデータ等が一時的に保持されるメモリ領域（ワークエリア）として構成されている。
The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program for controlling the operation of the substrate processing device, a process recipe in which procedures and conditions of a method for manufacturing a semiconductor device to be described later are described, and the like are readablely stored. The process recipes are combined so that the controller 121 can execute each step (each step) in the method for manufacturing a semiconductor device described later and obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc. are collectively referred to as a program. When the term program is used in the present disclosure, it may include only a process recipe alone, a control program alone, or a combination of a process recipe and a control program. The RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.
Ｉ／Ｏポート１２１ｄは、上述のＭＦＣ３１２，３２１，３３２，５１２，５２２，５３２，３１２－２、バルブ３１４，３２４，３３４，５１４，５２４，５３４，３１４－２、圧力センサ２４５、ＡＰＣバルブ２４３、真空ポンプ２４６、ヒータ２０７、温度センサ２６３、回転機構２６７、ボートエレベータ１１５等を、制御可能に接続されている。ここで接続とは、電気的に直接接続されていることや、間接的に接続されていること、電気信号を直接又は間接的に送受信可能に構成されていることも含む。
The I / O port 121d includes the above-mentioned MFC 312, 321, 332, 521, 522, 532, 312-2, valve 314, 324, 334, 514, 524, 534, 314-2, pressure sensor 245, APC valve 243, A vacuum pump 246, a heater 207, a temperature sensor 263, a rotation mechanism 267, a boat elevator 115, and the like are connected in a controllable manner. Here, the connection includes being electrically directly connected, being indirectly connected, and being configured to be able to directly or indirectly transmit and receive electrical signals.
ＣＰＵ１２１ａは、記憶装置１２１ｃから制御プログラムを読み出して実行すると共に、入出力装置１２２からの操作コマンドの入力等に応じて記憶装置１２１ｃからレシピ等を読み出すように構成されている。ＣＰＵ１２１ａは、読み出したレシピの内容に沿うように、ＭＦＣ３１２，３２１，３３２，５１２，５２２，５３２，３１２－２による各種ガスの流量調整動作、バルブ３１４，３２４，３３４，５１４，５２４，５３４，３１４－２の開閉動作、ＡＰＣバルブ２４３の開閉動作及びＡＰＣバルブ２４３による圧力センサ２４５に基づく圧力調整動作、温度センサ２６３に基づくヒータ２０７の温度調整動作、真空ポンプ２４６の起動及び停止、回転機構２６７によるボート２１７の回転及び回転速度調節動作、ボートエレベータ１１５によるボート２１７の昇降動作、ボート２１７へのウエハ２００の収容動作等を制御するように構成されている。
The CPU 121a is configured to read and execute a control program from the storage device 121c and read a recipe or the like from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like. The CPU 121a adjusts the flow rate of various gases by the MFC 312, 321, 332, 521, 522, 532, 312-2, and valves 314,324,334,514,524,534,314 according to the contents of the read recipe. -Opening / closing operation of -2, opening / closing operation of APC valve 243 and pressure adjustment operation based on pressure sensor 245 by APC valve 243, temperature adjustment operation of heater 207 based on temperature sensor 263, start and stop of vacuum pump 246, by rotation mechanism 267. It is configured to control the rotation and rotation speed adjustment operation of the boat 217, the raising and lowering operation of the boat 217 by the boat elevator 115, the accommodation operation of the wafer 200 in the boat 217, and the like.
コントローラ１２１は、外部記憶装置（例えば、磁気テープ、フレキシブルディスクやハードディスク等の磁気ディスク、ＣＤやＤＶＤ等の光ディスク、ＭＯ等の光磁気ディスク、ＵＳＢメモリやメモリカード等の半導体メモリ）１２３に格納された上述のプログラムを、コンピュータにインストールすることにより構成することができる。記憶装置１２１ｃや外部記憶装置１２３は、コンピュータ読み取り可能な記録媒体として構成されている。以下、これらを総称して、単に、記録媒体ともいう。本開示において記録媒体は、記憶装置１２１ｃ単体のみを含む場合、外部記憶装置１２３単体のみを含む場合、または、その両方を含む場合がある。コンピュータへのプログラムの提供は、外部記憶装置１２３を用いず、インターネットや専用回線等の通信手段を用いて行ってもよい。
The controller 121 is stored in an external storage device (for example, magnetic tape, magnetic disk such as flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) 123. The above-mentioned program can be configured by installing it on a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present disclosure, the recording medium may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both. The program may be provided to the computer by using a communication means such as the Internet or a dedicated line without using the external storage device 123.
（２）基板処理工程（成膜工程）
半導体装置（デバイス）の製造工程の一工程として、ウエハ２００上に、例えばフラッシュメモリのコントロールゲート膜や、ＭＯＳＦＥＴのワードライン電極を構成する金属膜を形成する工程の一例について、図４を用いて説明する。金属膜を形成する工程は、上述した基板処理装置１０の処理炉２０２を用いて実行される。以下の説明において、基板処理装置１０を構成する各部の動作はコントローラ１２１により制御される。 (2) Substrate processing process (deposition process)
As one step of the manufacturing process of the semiconductor device (device), an example of a step of forming a control gate film of a flash memory or a metal film constituting a word line electrode of a MOSFET on awafer 200 is shown with reference to FIG. explain. The step of forming the metal film is performed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 121.
半導体装置（デバイス）の製造工程の一工程として、ウエハ２００上に、例えばフラッシュメモリのコントロールゲート膜や、ＭＯＳＦＥＴのワードライン電極を構成する金属膜を形成する工程の一例について、図４を用いて説明する。金属膜を形成する工程は、上述した基板処理装置１０の処理炉２０２を用いて実行される。以下の説明において、基板処理装置１０を構成する各部の動作はコントローラ１２１により制御される。 (2) Substrate processing process (deposition process)
As one step of the manufacturing process of the semiconductor device (device), an example of a step of forming a control gate film of a flash memory or a metal film constituting a word line electrode of a MOSFET on a
なお、ウエハ２００の表面には、後述のＷＦ６ガス中のフッ素（Ｆ）がウエハ２００上に形成された絶縁膜（不図示）に拡散することを抑制するバリアメタルとしての窒化チタニウムＴｉＮ膜が形成されている。この様なバリアメタルの上にワードライン電極としてのタングステン（Ｗ）膜を形成する場合、Ｗ膜の抵抗率が高くなる課題があり、Ｗ膜の抵抗率を低くすることが求められる。
On the surface of the wafer 200, a titanium nitride TiN film as a barrier metal that prevents fluorine (F) in the WF 6 gas, which will be described later, from diffusing into an insulating film (not shown) formed on the wafer 200 is formed. It is formed. When forming a tungsten (W) film as a wordline electrode on such a barrier metal, there is a problem that the resistivity of the W film is increased, and it is required to reduce the resistivity of the W film.
本開示において「ウエハ」という言葉を用いた場合は、「ウエハそのもの」、「ウエハとその表面に形成された所定の層や膜等との積層体」、「ウエハとその表面に形成された構造体」を意味する場合がある。本開示において「ウエハの表面」という言葉を用いた場合は、「ウエハそのものの表面」、「ウエハ上に形成された所定の層や膜等の表面」、「ウエハとその表面に形成された構造体」を意味する場合がある。本開示において「基板」という言葉を用いた場合も、「ウエハ」という言葉を用いた場合と同義である。
When the word "wafer" is used in the present disclosure, "wafer itself", "laminate of wafer and predetermined layer or film formed on its surface", "wafer and structure formed on its surface". May mean "body". When the term "wafer surface" is used in the present disclosure, "the surface of the wafer itself", "the surface of a predetermined layer or film formed on the wafer", and "the wafer and the structure formed on the surface thereof" are used. May mean "body". The use of the term "board" in the present disclosure is also synonymous with the use of the term "wafer".
以下に図４～図８に基づいて、本開示の半導体装置の製造方法のフローやガス供給シーケンスについて説明する。なお、図６、図８の横軸は時間を表し、縦軸は、それぞれのガスのＯＮ／ＯＦＦを示している。
The flow and gas supply sequence of the manufacturing method of the semiconductor device of the present disclosure will be described below with reference to FIGS. 4 to 8. The horizontal axis of FIGS. 6 and 8 represents time, and the vertical axis represents ON / OFF of each gas.
［基板搬入工程Ｓ３０１］
複数枚のウエハ２００がボート２１７に装填（ウエハチャージ）されると、図１に示されているように、複数枚のウエハ２００を支持したボート２１７は、ボートエレベータ１１５によって持ち上げられて処理室２０１内に搬入（ボートロード）される。この状態で、シールキャップ２１９はＯリング２２０を介して反応管２０３の下端開口を閉塞した状態となる。 [Board loading process S301]
When a plurality ofwafers 200 are loaded (wafer charged) into the boat 217, as shown in FIG. 1, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and processed in the processing chamber 201. It is carried in (boat road). In this state, the seal cap 219 is in a state of closing the lower end opening of the reaction tube 203 via the O-ring 220.
複数枚のウエハ２００がボート２１７に装填（ウエハチャージ）されると、図１に示されているように、複数枚のウエハ２００を支持したボート２１７は、ボートエレベータ１１５によって持ち上げられて処理室２０１内に搬入（ボートロード）される。この状態で、シールキャップ２１９はＯリング２２０を介して反応管２０３の下端開口を閉塞した状態となる。 [Board loading process S301]
When a plurality of
［雰囲気調整工程Ｓ３０２］
処理室２０１内が所望の圧力（真空度）となるように真空ポンプ２４６によって真空排気される。この際、処理室２０１内の圧力は、圧力センサ２４５で測定され、この測定された圧力情報に基づき、ＡＰＣバルブ２４３がフィードバック制御される（圧力調整）。真空ポンプ２４６は、少なくともウエハ２００に対する処理が完了するまでの間は常時作動させた状態を維持する。また、処理室２０１内が所望の温度となるようにヒータ２０７によって加熱される。この際、処理室２０１内が所望の温度分布となるように、温度センサ２６３が検出した温度情報に基づきヒータ２０７への通電量がフィードバック制御される（温度調整）。ヒータ２０７による処理室２０１内の加熱は、少なくともウエハ２００に対する処理が完了するまでの間は継続して行われる。 [Atmosphere adjustment step S302]
The inside of theprocessing chamber 201 is evacuated by the vacuum pump 246 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 is always kept in operation until at least the processing on the wafer 200 is completed. Further, the inside of the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the amount of electricity supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heating in the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.
処理室２０１内が所望の圧力（真空度）となるように真空ポンプ２４６によって真空排気される。この際、処理室２０１内の圧力は、圧力センサ２４５で測定され、この測定された圧力情報に基づき、ＡＰＣバルブ２４３がフィードバック制御される（圧力調整）。真空ポンプ２４６は、少なくともウエハ２００に対する処理が完了するまでの間は常時作動させた状態を維持する。また、処理室２０１内が所望の温度となるようにヒータ２０７によって加熱される。この際、処理室２０１内が所望の温度分布となるように、温度センサ２６３が検出した温度情報に基づきヒータ２０７への通電量がフィードバック制御される（温度調整）。ヒータ２０７による処理室２０１内の加熱は、少なくともウエハ２００に対する処理が完了するまでの間は継続して行われる。 [Atmosphere adjustment step S302]
The inside of the
［初期成膜工程Ｓ３００］
続いて、初期成膜工程Ｓ３００が行われる。初期成膜工程Ｓ３００は、少なくとも、以下に記載する第１の成膜工程Ｓ３０３と第２の成膜工程Ｓ３０５を有する。それぞれの工程について、図５、図６、図７を用いて説明する。 [Initial film formation step S300]
Subsequently, the initial film forming step S300 is performed. The initial film forming step S300 includes at least the first film forming step S303 and the second film forming step S305 described below. Each step will be described with reference to FIGS. 5, 6, and 7.
続いて、初期成膜工程Ｓ３００が行われる。初期成膜工程Ｓ３００は、少なくとも、以下に記載する第１の成膜工程Ｓ３０３と第２の成膜工程Ｓ３０５を有する。それぞれの工程について、図５、図６、図７を用いて説明する。 [Initial film formation step S300]
Subsequently, the initial film forming step S300 is performed. The initial film forming step S300 includes at least the first film forming step S303 and the second film forming step S305 described below. Each step will be described with reference to FIGS. 5, 6, and 7.
［第１の成膜工程Ｓ３０３］
第１の成膜工程Ｓ３０３は、図５，図６の実線で示す様に、少なくとも、第１処理ガスの供給工程Ｓ３０３ａを有する。なお、図５，図６の破線で示す様に、パージ工程Ｓ３０３ｂ，Ｓ３０３ｄ、第１処理ガスとは異なる処理ガス供給工程Ｓ３０３ｃ、判定工程Ｓ３０３ｅを含む様に構成しても良い。以下に、それぞれの工程について説明する。 [First film forming step S303]
The first film forming step S303 includes at least the first processing gas supply step S303a, as shown by the solid lines in FIGS. 5 and 6. As shown by the broken lines in FIGS. 5 and 6, the purging steps S303b and S303d, the processing gas supply step S303c different from the first processing gas, and the determination step S303e may be included. Each process will be described below.
第１の成膜工程Ｓ３０３は、図５，図６の実線で示す様に、少なくとも、第１処理ガスの供給工程Ｓ３０３ａを有する。なお、図５，図６の破線で示す様に、パージ工程Ｓ３０３ｂ，Ｓ３０３ｄ、第１処理ガスとは異なる処理ガス供給工程Ｓ３０３ｃ、判定工程Ｓ３０３ｅを含む様に構成しても良い。以下に、それぞれの工程について説明する。 [First film forming step S303]
The first film forming step S303 includes at least the first processing gas supply step S303a, as shown by the solid lines in FIGS. 5 and 6. As shown by the broken lines in FIGS. 5 and 6, the purging steps S303b and S303d, the processing gas supply step S303c different from the first processing gas, and the determination step S303e may be included. Each process will be described below.
［第１処理ガス供給工程Ｓ３０３ａ］
第１処理ガス供給工程Ｓ３０３ａでは、処理室２０１内のウエハ２００に、第１処理ガスとしてのＳｉＨ４ガスが供給される。 [First processing gas supply step S303a]
In the first processing gas supply step S303a, SiH 4 gas as the first processing gas is supplied to thewafer 200 in the processing chamber 201.
第１処理ガス供給工程Ｓ３０３ａでは、処理室２０１内のウエハ２００に、第１処理ガスとしてのＳｉＨ４ガスが供給される。 [First processing gas supply step S303a]
In the first processing gas supply step S303a, SiH 4 gas as the first processing gas is supplied to the
（ＳｉＨ４ガス供給）
バルブ３１４を開き、ガス供給管３１０内に第１処理ガスであるＳｉＨ４ガスを流す。ＳｉＨ４ガスは、ＭＦＣ３１２により流量調整され、ノズル４１０のガス供給孔４１０ａから処理室２０１内に供給され、排気管２３１から排気される。このとき、同時にバルブ５１４を開き、ガス供給管５１０内にＮ２ガス等の不活性ガスを流す。ガス供給管５１０内を流れたＮ２ガスは、ＭＦＣ５１２により流量調整され、ＳｉＨ４ガスと一緒に処理室２０１内に供給され、排気管２３１から排気される。このとき、ノズル４２０やノズル４３０内へのＳｉＨ４ガスの侵入を防止するために、バルブ５２４，５３４を開き、ガス供給管５２０，５３０内にＮ２ガスを流す。Ｎ２ガスは、ガス供給管３２０，３３０、ノズル４２０，４３０を介して処理室２０１内に供給され、排気管２３１から排気される。このとき、ウエハ２００に対してＳｉＨ４ガスとＮ２ガスが同時に供給されることとなる。 (SiH 4 gas supply)
Thevalve 314 is opened to allow SiH 4 gas, which is the first processing gas, to flow into the gas supply pipe 310. The flow rate of SiH 4 gas is adjusted by the MFC 312, is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410, and is exhausted from the exhaust pipe 231. At this time, the valve 514 is opened at the same time, and an inert gas such as N 2 gas is allowed to flow in the gas supply pipe 510. The flow rate of the N 2 gas flowing through the gas supply pipe 510 is adjusted by the MFC 512, is supplied into the processing chamber 201 together with the SiH 4 gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the SiH 4 gas from entering the nozzle 420 and the nozzle 430, the valves 524 and 534 are opened and the N 2 gas flows into the gas supply pipes 520 and 530. The N 2 gas is supplied into the processing chamber 201 via the gas supply pipes 320 and 330 and the nozzles 420 and 430, and is exhausted from the exhaust pipe 231. At this time, SiH 4 gas and N 2 gas are simultaneously supplied to the wafer 200.
バルブ３１４を開き、ガス供給管３１０内に第１処理ガスであるＳｉＨ４ガスを流す。ＳｉＨ４ガスは、ＭＦＣ３１２により流量調整され、ノズル４１０のガス供給孔４１０ａから処理室２０１内に供給され、排気管２３１から排気される。このとき、同時にバルブ５１４を開き、ガス供給管５１０内にＮ２ガス等の不活性ガスを流す。ガス供給管５１０内を流れたＮ２ガスは、ＭＦＣ５１２により流量調整され、ＳｉＨ４ガスと一緒に処理室２０１内に供給され、排気管２３１から排気される。このとき、ノズル４２０やノズル４３０内へのＳｉＨ４ガスの侵入を防止するために、バルブ５２４，５３４を開き、ガス供給管５２０，５３０内にＮ２ガスを流す。Ｎ２ガスは、ガス供給管３２０，３３０、ノズル４２０，４３０を介して処理室２０１内に供給され、排気管２３１から排気される。このとき、ウエハ２００に対してＳｉＨ４ガスとＮ２ガスが同時に供給されることとなる。 (SiH 4 gas supply)
The
このときＡＰＣバルブ２４３を調整して、処理室２０１内の圧力を、例えば１～３９９０Ｐａ、好ましくは５～２６６０Ｐａ、より好ましくは１０～１５００Ｐａの範囲内の圧力とする。ＭＦＣ３１２で制御するＳｉＨ４ガスの供給流量は、例えば０．１～５ｓｌｍ、好ましくは０．３～３ｓｌｍ、より好ましくは０．５～２ｓｌｍの範囲内の流量とする。具体的には、１．０ｓｌｍとする。ＭＦＣ５１２，５２２，５３２で制御するＮ２ガスの供給流量は、それぞれ例えば０．０１～２０ｓｌｍ、好ましくは０．１～１０ｓｌｍ、より好ましくは０．１～１ｓｌｍの範囲内の流量とする。
At this time, the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is set to, for example, 1 to 3990 Pa, preferably 5 to 2660 Pa, and more preferably 10 to 1500 Pa. The supply flow rate of the SiH 4 gas controlled by the MFC 312 is, for example, a flow rate within the range of 0.1 to 5 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm. Specifically, it is set to 1.0 slm. The supply flow rate of the N 2 gas controlled by the MFC 512, 522, 532 is, for example, 0.01 to 20 slm, preferably 0.1 to 10 slm, and more preferably 0.1 to 1 slm.
ＳｉＨ４ガスを供給することで、ウエハ２００上に第１の膜としてのシリコン（Ｓｉ）膜が形成される。なお、Ｓｉ膜は、例えば、２原子層以上形成し、好ましくは、２ｎｍ～３０ｎｍであり、更に好ましくは５ｎｍ程度形成する。
By supplying SiH 4 gas, a silicon (Si) film as a first film is formed on the wafer 200. The Si film is formed, for example, by forming two or more atomic layers, preferably 2 nm to 30 nm, and more preferably about 5 nm.
第１の膜としてのＳｉ膜は、ＳｉＨ４ガスの供給を連続的に供給して、気相成長させても良いし、二つのＳｉ系ガスを交互に供給して、行っても良い。二つのＳｉ系ガスを交互に供給することにより、ウエハ２００上に形成された構造体表面に形成されるＳｉ膜の均一性を向上させることが可能となる。即ち、カバレッジ特性を向上させることが可能となる。Ｓｉ系ガスを交互に供給する工程のフローについて図５，図６を用いて説明する。
The Si film as the first film may be continuously supplied with SiH 4 gas for vapor phase growth, or may be supplied with two Si-based gases alternately. By alternately supplying the two Si-based gases, it is possible to improve the uniformity of the Si film formed on the surface of the structure formed on the wafer 200. That is, it is possible to improve the coverage characteristics. The flow of the process of alternately supplying Si-based gas will be described with reference to FIGS. 5 and 6.
まず、第１処理ガス供給工程Ｓ３０３ａの後、第１処理ガスとは異なる処理ガス供給工程Ｓ３０３ｃを行うが、第１処理ガス供給工程Ｓ３０３ａと第１処理ガスとは異なる処理ガス供給工程Ｓ３０３ｃの間で、パージ工程Ｓ３０３ｂが行われても良い。
First, after the first treatment gas supply step S303a, a treatment gas supply step S303c different from the first treatment gas is performed, but between the first treatment gas supply step S303a and the treatment gas supply step S303c different from the first treatment gas. Then, the purging step S303b may be performed.
［パージ工程Ｓ３０３ｂ］
パージ工程Ｓ３０３ｂでは、不活性ガスとしてのＮ２ガスが処理室２０１内に供給される。処理室２０１内に不活性ガスとしてのＮ２ガスを供給し、処理室２０１内の圧力調整が行われる。Ｎ２ガスの流量は、例えば０．１～５ｓｌｍ、好ましくは０．３～３ｓｌｍ、より好ましくは０．５～２ｓｌｍの範囲内の流量とする。この時の圧力は、後の第１ガスの供給時の圧力となる様に調整される。圧力は、例えば１～３９９０Ｐａの範囲内の圧力とする。 [Purge step S303b]
In the purge step S303b, N 2 gas as the inert gas is supplied into theprocessing chamber 201. Into the processing chamber 201 to supply N 2 gas as the inert gas, the pressure adjustment in the processing chamber 201 is performed. The flow rate of the N 2 gas is, for example, 0.1 to 5 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm. The pressure at this time is adjusted so as to be the pressure at the time of supplying the first gas later. The pressure is, for example, a pressure in the range of 1 to 3990 Pa.
パージ工程Ｓ３０３ｂでは、不活性ガスとしてのＮ２ガスが処理室２０１内に供給される。処理室２０１内に不活性ガスとしてのＮ２ガスを供給し、処理室２０１内の圧力調整が行われる。Ｎ２ガスの流量は、例えば０．１～５ｓｌｍ、好ましくは０．３～３ｓｌｍ、より好ましくは０．５～２ｓｌｍの範囲内の流量とする。この時の圧力は、後の第１ガスの供給時の圧力となる様に調整される。圧力は、例えば１～３９９０Ｐａの範囲内の圧力とする。 [Purge step S303b]
In the purge step S303b, N 2 gas as the inert gas is supplied into the
Ｎ２ガスを所定時間供給後、Ｎ２ガスの供給を停止又は流量減少させる。なお、Ｎ２ガスの供給は、処理室２０１内に存在する全てのノズルから行う様に構成しても良いし、いずれか一つから供給する様に構成しても良い。また、次の工程で使われるノズル以外のノズルから供給する様に構成しても良い。また、Ｎ２ガス供給を停止又は流量減少させた状態で、所定時間維持し、処理室２０１内に存在する未反応のＳｉＨ４ガスや、副生成物を除去する。
After supplying N 2 gas for a predetermined time, the supply of N 2 gas is stopped or the flow rate is reduced. The N 2 gas may be supplied from all the nozzles existing in the processing chamber 201, or may be supplied from any one of the nozzles. Further, it may be configured to be supplied from a nozzle other than the nozzle used in the next step. Further, the N 2 gas supply is maintained for a predetermined time in a state where the N 2 gas supply is stopped or the flow rate is reduced, and the unreacted SiH 4 gas and by-products existing in the processing chamber 201 are removed.
［第１処理ガスとは異なる処理ガス（第１の２処理ガス）供給工程Ｓ３０３ｃ］
第１処理ガスとは異なる処理ガス供給工程Ｓ３０３ａでは、処理室２０１内のウエハ２００に、第１処理ガスとは異なる処理ガスとしてのHCDSガスが供給される。 [Treatment gas different from the first treatment gas (first second treatment gas) supply step S303c]
In the processing gas supply step S303a different from the first processing gas, HCDS gas as a processing gas different from the first processing gas is supplied to thewafer 200 in the processing chamber 201.
第１処理ガスとは異なる処理ガス供給工程Ｓ３０３ａでは、処理室２０１内のウエハ２００に、第１処理ガスとは異なる処理ガスとしてのHCDSガスが供給される。 [Treatment gas different from the first treatment gas (first second treatment gas) supply step S303c]
In the processing gas supply step S303a different from the first processing gas, HCDS gas as a processing gas different from the first processing gas is supplied to the
（HCDSガス供給）
バルブ３１４－２を開き、ガス供給管３１０内に第１処理ガスとは異なる処理ガスであるHCDSガスを流す。HCDSガスは、ＭＦＣ３１２－２により流量調整され、ノズル４１０のガス供給孔４１０ａから処理室２０１内に供給され、排気管２３１から排気される。このとき、同時にバルブ５１４を開き、ガス供給管５１０内にＮ２ガス等の不活性ガスを流す。ガス供給管５１０内を流れたＮ２ガスは、ＭＦＣ５１２により流量調整され、HCDSガスと一緒に処理室２０１内に供給され、排気管２３１から排気される。このとき、ノズル４２０やノズル４３０内へのHCDSガスの侵入を防止するために、バルブ５２４，５３４を開き、ガス供給管５２０，５３０内にＮ２ガスを流す。Ｎ２ガスは、ガス供給管３２０，３３０、ノズル４２０，４３０を介して処理室２０１内に供給され、排気管２３１から排気される。このとき、ウエハ２００に対してHCDSガスとＮ２ガスが同時に供給されることとなる。 (HCDS gas supply)
The valve 314-2 is opened to allow HCDS gas, which is a processing gas different from the first processing gas, to flow into thegas supply pipe 310. The flow rate of the HCDS gas is adjusted by the MFC 312-2, is supplied into the processing chamber 201 from the gas supply hole 410a of the nozzle 410, and is exhausted from the exhaust pipe 231. At this time, the valve 514 is opened at the same time, and an inert gas such as N 2 gas is allowed to flow in the gas supply pipe 510. The flow rate of the N 2 gas flowing through the gas supply pipe 510 is adjusted by the MFC 512, is supplied into the processing chamber 201 together with the HCDS gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent infiltration of HCDS gas into nozzle 420 and the nozzle 430, opening the valve 524 and 534 to flow the N 2 gas into the gas supply pipe 520. The N 2 gas is supplied into the processing chamber 201 via the gas supply pipes 320 and 330 and the nozzles 420 and 430, and is exhausted from the exhaust pipe 231. At this time, it HCDS gas and N 2 gas is to be supplied simultaneously to the wafer 200.
バルブ３１４－２を開き、ガス供給管３１０内に第１処理ガスとは異なる処理ガスであるHCDSガスを流す。HCDSガスは、ＭＦＣ３１２－２により流量調整され、ノズル４１０のガス供給孔４１０ａから処理室２０１内に供給され、排気管２３１から排気される。このとき、同時にバルブ５１４を開き、ガス供給管５１０内にＮ２ガス等の不活性ガスを流す。ガス供給管５１０内を流れたＮ２ガスは、ＭＦＣ５１２により流量調整され、HCDSガスと一緒に処理室２０１内に供給され、排気管２３１から排気される。このとき、ノズル４２０やノズル４３０内へのHCDSガスの侵入を防止するために、バルブ５２４，５３４を開き、ガス供給管５２０，５３０内にＮ２ガスを流す。Ｎ２ガスは、ガス供給管３２０，３３０、ノズル４２０，４３０を介して処理室２０１内に供給され、排気管２３１から排気される。このとき、ウエハ２００に対してHCDSガスとＮ２ガスが同時に供給されることとなる。 (HCDS gas supply)
The valve 314-2 is opened to allow HCDS gas, which is a processing gas different from the first processing gas, to flow into the
このときＡＰＣバルブ２４３を調整して、処理室２０１内の圧力を、例えば１～３９９０Ｐａ、好ましくは５～２６６０Ｐａ、より好ましくは１０～１５００Ｐａの範囲内の圧力とする。ＭＦＣ３１２で制御するHCDSガスの供給流量は、例えば０．１～５ｓｌｍ、好ましくは０．３～３ｓｌｍ、より好ましくは０．５～２ｓｌｍの範囲内の流量とする。具体的には、１．０ｓｌｍとする。ＭＦＣ５１２，５２２，５３２で制御するＮ２ガスの供給流量は、それぞれ例えば０．０１～２０ｓｌｍ、好ましくは０．１～１０ｓｌｍ、より好ましくは０．１～１ｓｌｍの範囲内の流量とする。所定時間経過後、バルブ３１４－２を閉じる。
At this time, the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is set to, for example, 1 to 3990 Pa, preferably 5 to 2660 Pa, and more preferably 10 to 1500 Pa. The supply flow rate of the HCDS gas controlled by the MFC 312 is, for example, a flow rate within the range of 0.1 to 5 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm. Specifically, it is set to 1.0 slm. The supply flow rate of the N 2 gas controlled by the MFC 512, 522, 532 is, for example, 0.01 to 20 slm, preferably 0.1 to 10 slm, and more preferably 0.1 to 1 slm. After a lapse of a predetermined time, the valve 314-2 is closed.
HCDSガスを供給することで、ウエハ２００上に第１の膜としてのシリコン（Ｓｉ）膜が形成される。
By supplying HCDS gas, a silicon (Si) film as a first film is formed on the wafer 200.
［パージ工程Ｓ３０３ｄ］
続いて、パージ工程Ｓ３０３ｄが行われる。なお、パージ工程Ｓ３０３ｄは、上述のパージ工程Ｓ３０３ｂと略同様の工程であるので、説明を省略する。パージ工程Ｓ３０３ｄを行うことにより、処理室２０１内に存在する未反応のHCDSガスや、副生成物（ＨＣｌ）を除去する。 [Purge step S303d]
Subsequently, the purging step S303d is performed. Since the purging step S303d is substantially the same as the purging step S303b described above, the description thereof will be omitted. By performing the purging step S303d, unreacted HCDS gas and by-products (HCl) existing in theprocessing chamber 201 are removed.
続いて、パージ工程Ｓ３０３ｄが行われる。なお、パージ工程Ｓ３０３ｄは、上述のパージ工程Ｓ３０３ｂと略同様の工程であるので、説明を省略する。パージ工程Ｓ３０３ｄを行うことにより、処理室２０１内に存在する未反応のHCDSガスや、副生成物（ＨＣｌ）を除去する。 [Purge step S303d]
Subsequently, the purging step S303d is performed. Since the purging step S303d is substantially the same as the purging step S303b described above, the description thereof will be omitted. By performing the purging step S303d, unreacted HCDS gas and by-products (HCl) existing in the
［判定工程Ｓ３０３ｅ］
続いて、判定工程Ｓ３０３ｅが行われても良い。判定工程Ｓ３０３ｅでは、第１処理ガス供給工程Ｓ３０３ａと第１処理ガスとは異なる処理ガス供給工程Ｓ３０３ｃとが、所定回数行われたか、を判定する。所定回数行われていれば、ＹＥＳ（Ｙ）判定とし、第１の成膜工程Ｓ３０３を終了し、次の工程を行わせる。所定回数行われていなければ、Ｎｏ（Ｎ）判定として、第１の成膜工程Ｓ３０３を再度行わせる様に構成される。 [Determining step S303e]
Subsequently, the determination step S303e may be performed. In the determination step S303e, it is determined whether the first treatment gas supply step S303a and the treatment gas supply step S303c different from the first treatment gas have been performed a predetermined number of times. If it has been performed a predetermined number of times, a YES (Y) determination is made, the first film forming step S303 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the No (N) determination is made so that the first film forming step S303 is performed again.
続いて、判定工程Ｓ３０３ｅが行われても良い。判定工程Ｓ３０３ｅでは、第１処理ガス供給工程Ｓ３０３ａと第１処理ガスとは異なる処理ガス供給工程Ｓ３０３ｃとが、所定回数行われたか、を判定する。所定回数行われていれば、ＹＥＳ（Ｙ）判定とし、第１の成膜工程Ｓ３０３を終了し、次の工程を行わせる。所定回数行われていなければ、Ｎｏ（Ｎ）判定として、第１の成膜工程Ｓ３０３を再度行わせる様に構成される。 [Determining step S303e]
Subsequently, the determination step S303e may be performed. In the determination step S303e, it is determined whether the first treatment gas supply step S303a and the treatment gas supply step S303c different from the first treatment gas have been performed a predetermined number of times. If it has been performed a predetermined number of times, a YES (Y) determination is made, the first film forming step S303 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the No (N) determination is made so that the first film forming step S303 is performed again.
第１の成膜工程Ｓ３０３では、ウエハ２００上にＳｉ膜が形成される。
In the first film forming step S303, a Si film is formed on the wafer 200.
続いて、第２の成膜工程Ｓ３０５が行われる。なお、第１の成膜工程Ｓ３０３と第２の成膜工程Ｓ３０５との間で、パージ工程Ｓ３０４が行われても良い。
Subsequently, the second film forming step S305 is performed. The purging step S304 may be performed between the first film forming step S303 and the second film forming step S305.
［パージ工程Ｓ３０４］
なお、パージ工程Ｓ３０４は、上述のパージ工程Ｓ３０３ｂ,Ｓ３０３ｄと略同様の工程であるので、説明を省略する。ここでパージ工程を行うことにより、処理室２０１内の第１処理ガスや第１処理ガスとは異なる処理ガスが、第２の成膜工程Ｓ３０５で供給される金属含有ガスと反応することを抑制することが可能となる。例えば、HCDSガスとＷＦ６ガスとが反応し、タングステンシリサイド（ＷＳｉ）が生成されることを抑制する。 [Purge step S304]
Since the purging step S304 is substantially the same as the purging steps S303b and S303d described above, the description thereof will be omitted. By performing the purging step here, it is possible to prevent the first treatment gas in thetreatment chamber 201 and the treatment gas different from the first treatment gas from reacting with the metal-containing gas supplied in the second film forming step S305. It becomes possible to do. For example, it suppresses the reaction of HCDS gas and WF6 gas to form tungsten silicide (WSi).
なお、パージ工程Ｓ３０４は、上述のパージ工程Ｓ３０３ｂ,Ｓ３０３ｄと略同様の工程であるので、説明を省略する。ここでパージ工程を行うことにより、処理室２０１内の第１処理ガスや第１処理ガスとは異なる処理ガスが、第２の成膜工程Ｓ３０５で供給される金属含有ガスと反応することを抑制することが可能となる。例えば、HCDSガスとＷＦ６ガスとが反応し、タングステンシリサイド（ＷＳｉ）が生成されることを抑制する。 [Purge step S304]
Since the purging step S304 is substantially the same as the purging steps S303b and S303d described above, the description thereof will be omitted. By performing the purging step here, it is possible to prevent the first treatment gas in the
［第２の成膜工程Ｓ３０５］
第２の成膜工程Ｓ３０５は、図７の実線で示す様に、少なくとも第２処理ガス供給工程Ｓ３０５ａを有する。図７の破線で示す様に、パージ工程Ｓ３０５ｂや判定工程Ｓ３０５ｃを含む様に構成しても良い。以下にそれぞれの工程について説明する。 [Second film formation step S305]
The second film forming step S305 includes at least the second processing gas supply step S305a as shown by the solid line in FIG. As shown by the broken line in FIG. 7, the purging step S305b and the determination step S305c may be included. Each process will be described below.
第２の成膜工程Ｓ３０５は、図７の実線で示す様に、少なくとも第２処理ガス供給工程Ｓ３０５ａを有する。図７の破線で示す様に、パージ工程Ｓ３０５ｂや判定工程Ｓ３０５ｃを含む様に構成しても良い。以下にそれぞれの工程について説明する。 [Second film formation step S305]
The second film forming step S305 includes at least the second processing gas supply step S305a as shown by the solid line in FIG. As shown by the broken line in FIG. 7, the purging step S305b and the determination step S305c may be included. Each process will be described below.
［第２処理ガス供給工程Ｓ３０５ａ］
第２処理ガス供給工程Ｓ３０５ａでは、ウエハ２００に第２処理ガスとしてのＷＦ６ガスが供給される。 [Second processing gas supply process S305a]
In the second processing gas supply step S305a, thewafer 200 is supplied with WF 6 gas as the second processing gas.
第２処理ガス供給工程Ｓ３０５ａでは、ウエハ２００に第２処理ガスとしてのＷＦ６ガスが供給される。 [Second processing gas supply process S305a]
In the second processing gas supply step S305a, the
（ＷＦ６ガス供給）
バルブ３２４を開き、ガス供給管３２０内に第２処理ガスであるＷＦ６ガスを流す。ＷＦ６スは、ＭＦＣ３２１により流量調整され、ノズル４２０のガス供給孔４２０ａから処理室２０１内に供給され、排気管２３１から排気される。このとき、同時にバルブ５２４を開き、ガス供給管５２０内にＮ２ガス等の不活性ガスを流す。ガス供給管５２０内を流れたＮ２ガスは、ＭＦＣ５２２により流量調整され、ＷＦ６ガスと一緒に処理室２０１内に供給され、排気管２３１から排気される。このとき、ノズル４１０やノズル４３０内へのＷＦ６ガスの侵入を防止するために、バルブ５１４，５３４を開き、ガス供給管５１０，５３０内にＮ２ガスを流す。Ｎ２ガスは、ガス供給管３１０，３３０、ノズル４１０，４３０を介して処理室２０１内に供給され、排気管２３１から排気される。このとき、ウエハ２００に対してＷＦ６ガスとＮ２ガスが同時に供給されることとなる。 (WF 6 gas supply)
Thevalve 324 is opened and the WF 6 gas, which is the second processing gas, flows into the gas supply pipe 320. The flow rate of the WF 6 is adjusted by the MFC 321 and is supplied into the processing chamber 201 from the gas supply hole 420a of the nozzle 420 and exhausted from the exhaust pipe 231. At this time, the valve 524 is opened at the same time to allow an inert gas such as N 2 gas to flow into the gas supply pipe 520. The flow rate of the N 2 gas flowing through the gas supply pipe 520 is adjusted by the MFC 522, is supplied into the processing chamber 201 together with the WF 6 gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the WF 6 gas from entering the nozzle 410 and the nozzle 430, the valves 514 and 534 are opened to allow the N 2 gas to flow into the gas supply pipes 510 and 530. The N 2 gas is supplied into the processing chamber 201 via the gas supply pipes 310 and 330 and the nozzles 410 and 430, and is exhausted from the exhaust pipe 231. At this time, the WF 6 gas and the N 2 gas are simultaneously supplied to the wafer 200.
バルブ３２４を開き、ガス供給管３２０内に第２処理ガスであるＷＦ６ガスを流す。ＷＦ６スは、ＭＦＣ３２１により流量調整され、ノズル４２０のガス供給孔４２０ａから処理室２０１内に供給され、排気管２３１から排気される。このとき、同時にバルブ５２４を開き、ガス供給管５２０内にＮ２ガス等の不活性ガスを流す。ガス供給管５２０内を流れたＮ２ガスは、ＭＦＣ５２２により流量調整され、ＷＦ６ガスと一緒に処理室２０１内に供給され、排気管２３１から排気される。このとき、ノズル４１０やノズル４３０内へのＷＦ６ガスの侵入を防止するために、バルブ５１４，５３４を開き、ガス供給管５１０，５３０内にＮ２ガスを流す。Ｎ２ガスは、ガス供給管３１０，３３０、ノズル４１０，４３０を介して処理室２０１内に供給され、排気管２３１から排気される。このとき、ウエハ２００に対してＷＦ６ガスとＮ２ガスが同時に供給されることとなる。 (WF 6 gas supply)
The
このときＡＰＣバルブ２４３を調整して、処理室２０１内の圧力を、例えば１～３９９０Ｐａ、好ましくは５～２６６０Ｐａ、より好ましくは１０～１５００Ｐａの範囲内の圧力とする。ＭＦＣ３１２で制御するＷＦ６ガスの供給流量は、例えば０．１～５ｓｌｍ、好ましくは０．３～３ｓｌｍ、より好ましくは０．５～２ｓｌｍの範囲内の流量とする。具体的には、１．０ｓｌｍとする。ＭＦＣ５１２，５２２，５３２で制御するＮ２ガスの供給流量は、それぞれ例えば０．０１～２０ｓｌｍ、好ましくは０．１～１０ｓｌｍ、より好ましくは０．１～１ｓｌｍの範囲内の流量とする。
At this time, the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is set to, for example, 1 to 3990 Pa, preferably 5 to 2660 Pa, and more preferably 10 to 1500 Pa. The supply flow rate of the WF 6 gas controlled by the MFC 312 is, for example, a flow rate within the range of 0.1 to 5 slm, preferably 0.3 to 3 slm, and more preferably 0.5 to 2 slm. Specifically, it is set to 1.0 slm. The supply flow rate of the N 2 gas controlled by the MFC 512, 522, 532 is, for example, 0.01 to 20 slm, preferably 0.1 to 10 slm, and more preferably 0.1 to 1 slm.
ＷＦ６ガスは、ウエハ２００上に形成された第１の膜としてのシリコン（Ｓｉ）膜と接することで次式の反応が生じる。６Ｓｉ＋４ＷＦ６→６ＳｉＦ４＋４Ｗの反応が生じる。この反応により、ウエハ２００上に形成された第１の膜としてのＳｉ膜が、第２の膜としてのタングステン（Ｗ）膜にコンバージョン（変化）する。ウエハ２００上に形成されていたＳｉは、ＳｉＦ４として脱離（昇華）する。なお、この反応の過程でウエハ２００上にあったＳｉのサイトにＷが入れ替わり、Ｗ膜が形成される。これにより、ウエハ２００上にＷ膜が形成される。Ｗ原子（Ｗ結晶）が密に並んだ膜が形成される。よって、例えば、バリアメタル上に、直接、後述の第３の成膜工程を行って形成したＷ膜よりも低抵抗なＷ膜が形成される。
The reaction of the following formula occurs when the WF 6 gas comes into contact with the silicon (Si) film as the first film formed on the wafer 200. 6Si + 4WF 6 → 6SiF 4 + 4W reaction occurs. By this reaction, the Si film as the first film formed on the wafer 200 is converted (changed) into the tungsten (W) film as the second film. The Si formed on the wafer 200 is desorbed (sublimated) as SiF 4 . In the process of this reaction, W is replaced with the Si site on the wafer 200, and a W film is formed. As a result, a W film is formed on the wafer 200. A film in which W atoms (W crystals) are densely arranged is formed. Therefore, for example, a W film having a lower resistance than the W film formed by directly performing the third film forming step described later is formed on the barrier metal.
なお、好ましくは、事前にフラッシュタンク３２２に、ＷＦ６ガスを溜めておき、ＷＦ６ガスをフラッシュ供給する様に構成する。ＷＦ６ガスをフラッシュ供給することにより、ＷＦ６ガスを供給しつつ、反応で生じる副生成物の除去効率を向上させることができる。
It is preferable that the flash tank 322 is filled with WF 6 gas in advance and the WF 6 gas is supplied in a flash. By supplying the WF 6 gas with a flash, it is possible to improve the efficiency of removing by-products generated in the reaction while supplying the WF 6 gas.
ここで、ウエハ２００上にＳｉ膜が、５ｎｍ形成されている場合は、３ｎｍ程度のＷ膜が形成されるまで、ＷＦ６ガスの供給を継続して、ウエハ２００上のＳｉ膜からＷ膜へのコンバージョンを行う。なお、Ｗ膜中の不純物（Ｓｉやフッ素（Ｆ））の除去のため、第２処理ガス供給工程Ｓ３０５ａを間欠的に行わせても良い。言い換えると、図７に示す様に、第２処理ガス供給工程Ｓ３０５ａとパージ工程Ｓ３０５ｂとを繰り返し行う様に構成しても良い。
Here, when a Si film of 5 nm is formed on the wafer 200, the supply of WF 6 gas is continued until a W film of about 3 nm is formed, and the Si film on the wafer 200 is transferred to the W film. Convert. The second processing gas supply step S305a may be performed intermittently in order to remove impurities (Si and fluorine (F)) in the W film. In other words, as shown in FIG. 7, the second processing gas supply step S305a and the purging step S305b may be repeated.
［パージ工程Ｓ３０５ｂ］
パージ工程Ｓ３０５ｂは、上述の他のパージ工程と略同様の手順であるため、説明を省略する。パージ工程Ｓ３０５ｂを行うことにより、ウエハ２００上や処理室２０１内に存在する副生物を除去する。これにより、第２の膜としてのＷ膜中の不純物濃度を低下させることが可能となる。即ち、Ｗ膜の抵抗率を低下させることが可能となる。 [Purge step S305b]
Since the purging step S305b is a procedure substantially the same as the other purging steps described above, the description thereof will be omitted. By performing the purging step S305b, by-products existing on thewafer 200 and in the processing chamber 201 are removed. This makes it possible to reduce the impurity concentration in the W film as the second film. That is, it is possible to reduce the resistivity of the W film.
パージ工程Ｓ３０５ｂは、上述の他のパージ工程と略同様の手順であるため、説明を省略する。パージ工程Ｓ３０５ｂを行うことにより、ウエハ２００上や処理室２０１内に存在する副生物を除去する。これにより、第２の膜としてのＷ膜中の不純物濃度を低下させることが可能となる。即ち、Ｗ膜の抵抗率を低下させることが可能となる。 [Purge step S305b]
Since the purging step S305b is a procedure substantially the same as the other purging steps described above, the description thereof will be omitted. By performing the purging step S305b, by-products existing on the
［判定工程Ｓ３０５ｃ］
判定工程Ｓ３０５ｃでは、第２処理ガス供給工程Ｓ３０５ａが所定時間（所定回数）行われたか否かを判定する。所定回数行われていれば、ＹＥＳ（Ｙ）判定とし、第２の成膜工程Ｓ３０５を終了し、次の工程を行わせる。所定回数行われていなければ、Ｎｏ（Ｎ）判定として、第２の成膜工程Ｓ３０３を再度行わせる様に構成される。 [Judgment step S305c]
In the determination step S305c, it is determined whether or not the second processing gas supply step S305a has been performed for a predetermined time (predetermined number of times). If it has been performed a predetermined number of times, a YES (Y) determination is made, the second film forming step S305 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the second film forming step S303 is performed again as a No (N) determination.
判定工程Ｓ３０５ｃでは、第２処理ガス供給工程Ｓ３０５ａが所定時間（所定回数）行われたか否かを判定する。所定回数行われていれば、ＹＥＳ（Ｙ）判定とし、第２の成膜工程Ｓ３０５を終了し、次の工程を行わせる。所定回数行われていなければ、Ｎｏ（Ｎ）判定として、第２の成膜工程Ｓ３０３を再度行わせる様に構成される。 [Judgment step S305c]
In the determination step S305c, it is determined whether or not the second processing gas supply step S305a has been performed for a predetermined time (predetermined number of times). If it has been performed a predetermined number of times, a YES (Y) determination is made, the second film forming step S305 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the second film forming step S303 is performed again as a No (N) determination.
この様にして、第２の成膜工程Ｓ３０５が行われる。第２の成膜工程Ｓ３０５の後は、第３の成膜工程Ｓ４００が行われるが、第２の成膜工程Ｓ３０５と、第３の成膜工程Ｓ４００の間で、パージ工程Ｓ３０６と判定工程Ｓ３０７とを行わせても良い。
In this way, the second film forming step S305 is performed. After the second film forming step S305, the third film forming step S400 is performed. Between the second film forming step S305 and the third film forming step S400, the purge step S306 and the determination step S307 And may be done.
［パージ工程Ｓ３０６］
パージ工程Ｓ３０６は、上述の他のパージ工程と略同様の手順であるため、説明を省略する。パージ工程Ｓ３０６を行うことにより、第２の膜としてのＷ膜中の不純物濃度を低下させることが可能となる。即ち、Ｗ膜の抵抗率を低下させることが可能となる。 [Purge step S306]
Since the purging step S306 is a procedure substantially the same as the other purging steps described above, the description thereof will be omitted. By performing the purging step S306, it is possible to reduce the impurity concentration in the W film as the second film. That is, it is possible to reduce the resistivity of the W film.
パージ工程Ｓ３０６は、上述の他のパージ工程と略同様の手順であるため、説明を省略する。パージ工程Ｓ３０６を行うことにより、第２の膜としてのＷ膜中の不純物濃度を低下させることが可能となる。即ち、Ｗ膜の抵抗率を低下させることが可能となる。 [Purge step S306]
Since the purging step S306 is a procedure substantially the same as the other purging steps described above, the description thereof will be omitted. By performing the purging step S306, it is possible to reduce the impurity concentration in the W film as the second film. That is, it is possible to reduce the resistivity of the W film.
［判定工程Ｓ３０７］
判定工程Ｓ３０７は、第１の成膜工程Ｓ３０３と第２の成膜工程Ｓ３０５とを繰り返す場合に、この２つの工程が、所定回数行われたか否かを判定する。所定回数行われていれば、ＹＥＳ（Ｙ）判定とし、初期膜成膜工程Ｓ３００を終了し、次の工程を行わせる。所定回数行われていなければ、Ｎｏ（Ｎ）判定として、初期膜成膜工程Ｓ３００を再度行わせる様に構成される。 [Determining step S307]
The determination step S307 determines whether or not these two steps have been performed a predetermined number of times when the first film formation step S303 and the second film formation step S305 are repeated. If it has been performed a predetermined number of times, a YES (Y) determination is made, the initial film forming step S300 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the initial film forming step S300 is re-performed as a No (N) determination.
判定工程Ｓ３０７は、第１の成膜工程Ｓ３０３と第２の成膜工程Ｓ３０５とを繰り返す場合に、この２つの工程が、所定回数行われたか否かを判定する。所定回数行われていれば、ＹＥＳ（Ｙ）判定とし、初期膜成膜工程Ｓ３００を終了し、次の工程を行わせる。所定回数行われていなければ、Ｎｏ（Ｎ）判定として、初期膜成膜工程Ｓ３００を再度行わせる様に構成される。 [Determining step S307]
The determination step S307 determines whether or not these two steps have been performed a predetermined number of times when the first film formation step S303 and the second film formation step S305 are repeated. If it has been performed a predetermined number of times, a YES (Y) determination is made, the initial film forming step S300 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the initial film forming step S300 is re-performed as a No (N) determination.
［メイン膜形成工程（第３の成膜工程）Ｓ４００］
初期膜成膜工程Ｓ３００の後、メイン膜形成工程（第３の成膜工程）Ｓ４００が行われる。メイン膜形成工程Ｓ４００は、図４の実線に示す様に、少なくとも第２処理ガス供給工程Ｓ４０３と、第３処理ガス供給工程Ｓ４０５とが行われる。ウエハ２００上に形成するメイン膜の膜特性を向上のため、図４の破線で示すパージ工程Ｓ４０４，Ｓ４０６、判定工程Ｓ４０７を行わせても良い。以下にそれぞれの工程について説明する。 [Main film forming step (third film forming step) S400]
After the initial film forming step S300, the main film forming step (third film forming step) S400 is performed. In the main film forming step S400, at least the second treated gas supply step S403 and the third treated gas supply step S405 are performed as shown by the solid line in FIG. In order to improve the film characteristics of the main film formed on thewafer 200, the purging steps S404 and S406 and the determination step S407 shown by the broken lines in FIG. 4 may be performed. Each process will be described below.
初期膜成膜工程Ｓ３００の後、メイン膜形成工程（第３の成膜工程）Ｓ４００が行われる。メイン膜形成工程Ｓ４００は、図４の実線に示す様に、少なくとも第２処理ガス供給工程Ｓ４０３と、第３処理ガス供給工程Ｓ４０５とが行われる。ウエハ２００上に形成するメイン膜の膜特性を向上のため、図４の破線で示すパージ工程Ｓ４０４，Ｓ４０６、判定工程Ｓ４０７を行わせても良い。以下にそれぞれの工程について説明する。 [Main film forming step (third film forming step) S400]
After the initial film forming step S300, the main film forming step (third film forming step) S400 is performed. In the main film forming step S400, at least the second treated gas supply step S403 and the third treated gas supply step S405 are performed as shown by the solid line in FIG. In order to improve the film characteristics of the main film formed on the
［第２処理ガス供給工程Ｓ４０３］
第２処理ガス供給工程Ｓ４０３では、第２の膜としてのＷ膜を有する初期膜が形成されたウエハ２００に対して、上述の第２処理ガス供給工程Ｓ３０５ａと略同様の手順が行われるので、説明は省略する。第２処理ガス供給工程Ｓ４０３が行われることにより、第２の膜としてのＷ膜を有する初期膜上にＷとＦを含む（ＷＦｘ）膜が形成される。ここでｘは４よりも小さい自然数である。なお、初期のＷ膜の結晶（Ｗ原子）は密に並んでおり、第２処理ガス供給工程Ｓ４０３では、この初期のＷ膜の結晶（Ｗ原子）の並びに沿って、ＷＦｘが吸着する。 [Second processing gas supply process S403]
In the second treatment gas supply step S403, substantially the same procedure as in the second treatment gas supply step S305a described above is performed on thewafer 200 on which the initial film having the W film as the second film is formed. The description is omitted. By performing the second processing gas supply step S403, a (WFx) film containing W and F is formed on the initial film having the W film as the second film. Where x is a natural number less than 4. The initial W film crystals (W atoms) are densely arranged, and in the second processing gas supply step S403, WFx is adsorbed along the arrangement of the initial W film crystals (W atoms).
第２処理ガス供給工程Ｓ４０３では、第２の膜としてのＷ膜を有する初期膜が形成されたウエハ２００に対して、上述の第２処理ガス供給工程Ｓ３０５ａと略同様の手順が行われるので、説明は省略する。第２処理ガス供給工程Ｓ４０３が行われることにより、第２の膜としてのＷ膜を有する初期膜上にＷとＦを含む（ＷＦｘ）膜が形成される。ここでｘは４よりも小さい自然数である。なお、初期のＷ膜の結晶（Ｗ原子）は密に並んでおり、第２処理ガス供給工程Ｓ４０３では、この初期のＷ膜の結晶（Ｗ原子）の並びに沿って、ＷＦｘが吸着する。 [Second processing gas supply process S403]
In the second treatment gas supply step S403, substantially the same procedure as in the second treatment gas supply step S305a described above is performed on the
［パージ工程Ｓ４０４］
次に、パージ工程Ｓ４０４が行われる。パージ工程Ｓ４０４は、上述の各パージ工程と略同様の手順であるため、説明を省略する。 [Purge step S404]
Next, the purging step S404 is performed. Since the purging step S404 is a procedure substantially the same as each of the above-mentioned purging steps, the description thereof will be omitted.
次に、パージ工程Ｓ４０４が行われる。パージ工程Ｓ４０４は、上述の各パージ工程と略同様の手順であるため、説明を省略する。 [Purge step S404]
Next, the purging step S404 is performed. Since the purging step S404 is a procedure substantially the same as each of the above-mentioned purging steps, the description thereof will be omitted.
［第３処理ガス供給工程Ｓ４０５］
第３処理ガス供給工程Ｓ４０５では、ＷＦｘが吸着したウエハ２００に対して、第３処理ガス（反応ガス）としての、Ｈ２ガスが供給される。 [Third processing gas supply process S405]
In the third process gas supply step S405, thewafer 200 WFx is adsorbed, as a third process gas (reaction gas), H 2 gas is supplied.
第３処理ガス供給工程Ｓ４０５では、ＷＦｘが吸着したウエハ２００に対して、第３処理ガス（反応ガス）としての、Ｈ２ガスが供給される。 [Third processing gas supply process S405]
In the third process gas supply step S405, the
（Ｈ２ガス供給）
バルブ３３４を開き、ガス供給管３３０内に反応ガスであるＨ２ガスを流す。Ｈ２ガスは、ＭＦＣ３３２により流量調整され、ノズル４３０のガス供給孔４３０ａから処理室２０１内に供給され、排気管２３１から排気される。このとき、ウエハ２００に対してＨ２ガスが供給されることとなる。このとき同時にバルブ５３４を開き、ガス供給管５３０内にＮ２ガス等の不活性ガスを流す。ガス供給管５３０内を流れたＮ２ガスは、ＭＦＣ５３２により流量調整され、Ｈ２ガスと一緒に処理室２０１内に供給され、排気管２３１から排気される。なお、このとき、ノズル４１０，４２０内へのＨ２ガスの侵入を防止するために、バルブ５１４，５２４を開き、ガス供給管５１０，５２０内にＮ２ガスを流す。Ｎ２ガスは、ガス供給管３１０，３２０、ノズル４１０，４２０を介して処理室２０１内に供給され、排気管２３１から排気される。 (H 2 gas supply)
Opening thevalve 334, flow of H 2 gas is a reaction gas into the gas supply pipe 330. The flow rate of the H 2 gas is adjusted by the MFC 332, is supplied into the processing chamber 201 from the gas supply hole 430 a of the nozzle 430, and is exhausted from the exhaust pipe 231. At this time, H 2 gas is supplied to the wafer 200. At the same time opening the valve 534, flow the inert gas such as N 2 gas into the gas supply pipe 530. The flow rate of the N 2 gas flowing through the gas supply pipe 530 is adjusted by the MFC 532, is supplied into the processing chamber 201 together with the H 2 gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the H 2 gas from entering the nozzles 410 and 420, the valves 514 and 524 are opened to allow the N 2 gas to flow into the gas supply pipes 510 and 520. The N 2 gas is supplied into the processing chamber 201 via the gas supply pipes 310 and 320 and the nozzles 410 and 420, and is exhausted from the exhaust pipe 231.
バルブ３３４を開き、ガス供給管３３０内に反応ガスであるＨ２ガスを流す。Ｈ２ガスは、ＭＦＣ３３２により流量調整され、ノズル４３０のガス供給孔４３０ａから処理室２０１内に供給され、排気管２３１から排気される。このとき、ウエハ２００に対してＨ２ガスが供給されることとなる。このとき同時にバルブ５３４を開き、ガス供給管５３０内にＮ２ガス等の不活性ガスを流す。ガス供給管５３０内を流れたＮ２ガスは、ＭＦＣ５３２により流量調整され、Ｈ２ガスと一緒に処理室２０１内に供給され、排気管２３１から排気される。なお、このとき、ノズル４１０，４２０内へのＨ２ガスの侵入を防止するために、バルブ５１４，５２４を開き、ガス供給管５１０，５２０内にＮ２ガスを流す。Ｎ２ガスは、ガス供給管３１０，３２０、ノズル４１０，４２０を介して処理室２０１内に供給され、排気管２３１から排気される。 (H 2 gas supply)
Opening the
このときＡＰＣバルブ２４３を調整して、処理室２０１内の圧力を、例えば１～３９９０Ｐａの範囲内の圧力とする。ＭＦＣ３３２で制御するＨ２ガスの供給流量は、例えば０．１～５０ｓｌｍの範囲内の流量とする。ＭＦＣ５１２，５２２，５３２で制御するＮ２ガスの供給流量は、それぞれ例えば０．１～２０ｓｌｍの範囲内の流量とする。Ｈ２ガスをウエハ２００に対して供給する時間は、例えば０．１～２０秒の範囲内の時間とする。このときヒータ２０７の温度は、ウエハ２００の温度が、例えば２００～６００℃の範囲内の温度となるような温度に設定する。処理室２０１内に流しているガスはＨ２ガスとＮ２ガスのみであり、Ｈ２ガスの供給により、ウエハ２００（表面の下地膜）上に、第３の膜として、例えば１原子層未満から数原子層程度の厚さの金属層としてのＷ層が形成される。
At this time, the APC valve 243 is adjusted so that the pressure in the processing chamber 201 is set to, for example, a pressure in the range of 1 to 3990 Pa. The supply flow rate of the H 2 gas controlled by the MFC 332 is, for example, a flow rate in the range of 0.1 to 50 slm. The supply flow rate of the N 2 gas controlled by the MFC 512, 522, 532 is, for example, a flow rate within the range of 0.1 to 20 slm. Time for supplying the H 2 gas to the wafer 200 is, for example, time within a range of 0.1 to 20 seconds. At this time, the temperature of the heater 207 is set to a temperature such that the temperature of the wafer 200 is in the range of, for example, 200 to 600 ° C. The only gases flowing in the processing chamber 201 are H 2 gas and N 2 gas, and by supplying the H 2 gas, a third film, for example, less than one atomic layer, is placed on the wafer 200 (surface base film). A W layer is formed as a metal layer having a thickness of about several atomic layers.
なお、ここでは、第２処理ガス供給工程Ｓ４０３と第３処理ガス供給工程Ｓ４０５とを別々に行う例を説明したが、これに限らず、第２処理ガス供給工程Ｓ４０３と第３処理ガス供給工程Ｓ４０５とを同時に行う様に構成しても良い。第２処理ガス供給工程Ｓ４０３と第３処理ガス供給工程Ｓ４０５とを別々に行うことにより、メイン膜中のＦ濃度の低減や、カバレッジ向上、等の効果が得られる。一方で、第２処理ガス供給工程Ｓ４０３と第３処理ガス供給工程Ｓ４０５とを同時に行うことで、これらの効果は期待できないが、成膜レートを向上させることができ、スループットを向上させることができる。
Although the example in which the second treated gas supply step S403 and the third treated gas supply step S405 are performed separately has been described here, the present invention is not limited to this, and the second treated gas supply step S403 and the third treated gas supply step are not limited to this. It may be configured so that S405 and S405 are performed at the same time. By separately performing the second treated gas supply step S403 and the third treated gas supply step S405, effects such as reduction of F concentration in the main film and improvement of coverage can be obtained. On the other hand, by simultaneously performing the second treatment gas supply step S403 and the third treatment gas supply step S405, these effects cannot be expected, but the film formation rate can be improved and the throughput can be improved. ..
［パージ工程Ｓ４０６］
次に、パージ工程Ｓ４０６が行われる。パージ工程Ｓ４０６では、処理室２０１内に残留する未反応もしくはＷ層形成に寄与した後のＨ２ガスを処理室２０１内から排除する。なお、パージ工程Ｓ４０６は、上述の各パージ工程と略同様の手順であるため、説明を省略する。 [Purge step S406]
Next, the purging step S406 is performed. In the purging step S406, the unreacted H 2 gas remaining in thetreatment chamber 201 or after contributing to the formation of the W layer is removed from the treatment chamber 201. Since the purging step S406 is a procedure substantially the same as each of the above-mentioned purging steps, the description thereof will be omitted.
次に、パージ工程Ｓ４０６が行われる。パージ工程Ｓ４０６では、処理室２０１内に残留する未反応もしくはＷ層形成に寄与した後のＨ２ガスを処理室２０１内から排除する。なお、パージ工程Ｓ４０６は、上述の各パージ工程と略同様の手順であるため、説明を省略する。 [Purge step S406]
Next, the purging step S406 is performed. In the purging step S406, the unreacted H 2 gas remaining in the
［判定工程Ｓ４０７］
次に判定工程Ｓ４０７が行われる。判定工程Ｓ４０７では、第２処理ガス供給工程Ｓ４０３と第３処理ガス供給工程Ｓ４０５とが、所定回数行われたか否かが判定される。所定回数行われていれば、ＹＥＳ（Ｙ）判定とし、メイン膜成膜工程Ｓ４００を終了し、次の工程を行わせる。所定回数行われていなければ、Ｎｏ（Ｎ）判定として、メイン膜成膜工程Ｓ４００を再度行わせる様に構成される。 [Determining step S407]
Next, the determination step S407 is performed. In the determination step S407, it is determined whether or not the second treated gas supply step S403 and the third treated gas supply step S405 have been performed a predetermined number of times. If it has been performed a predetermined number of times, a YES (Y) determination is made, the main film film forming step S400 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the No (N) determination is made so that the main film forming step S400 is performed again.
次に判定工程Ｓ４０７が行われる。判定工程Ｓ４０７では、第２処理ガス供給工程Ｓ４０３と第３処理ガス供給工程Ｓ４０５とが、所定回数行われたか否かが判定される。所定回数行われていれば、ＹＥＳ（Ｙ）判定とし、メイン膜成膜工程Ｓ４００を終了し、次の工程を行わせる。所定回数行われていなければ、Ｎｏ（Ｎ）判定として、メイン膜成膜工程Ｓ４００を再度行わせる様に構成される。 [Determining step S407]
Next, the determination step S407 is performed. In the determination step S407, it is determined whether or not the second treated gas supply step S403 and the third treated gas supply step S405 have been performed a predetermined number of times. If it has been performed a predetermined number of times, a YES (Y) determination is made, the main film film forming step S400 is completed, and the next step is performed. If it has not been performed a predetermined number of times, the No (N) determination is made so that the main film forming step S400 is performed again.
メイン膜成膜工程Ｓ４００の後、雰囲気調整工程Ｓ３０８と基板搬出工程Ｓ３０９とが行われる。それぞれについて以下に説明する。
After the main film film forming step S400, the atmosphere adjusting step S308 and the substrate unloading step S309 are performed. Each will be described below.
（雰囲気調整工程Ｓ３０８）
ガス供給管５１０，５２０，５３０のそれぞれからＮ２ガスを処理室２０１内へ供給し、排気管２３１から排気する。Ｎ２ガスはパージガスとして作用し、これにより処理室２０１内が不活性ガスでパージされ、処理室２０１内に残留するガスや副生成物が処理室２０１内から除去される（アフターパージ）。その後、処理室２０１内の雰囲気が不活性ガスに置換され（不活性ガス置換）、処理室２０１内の圧力が常圧に復帰される（大気圧復帰）。 (Atmosphere adjustment step S308)
The N 2 gas is supplied into theprocess chamber 201 from the respective gas supply pipes 510, 520, and 530, is exhausted from the exhaust pipe 231. The N 2 gas acts as a purge gas, whereby the inside of the treatment chamber 201 is purged with the inert gas, and the gas and by-products remaining in the treatment chamber 201 are removed from the inside of the treatment chamber 201 (after-purge). After that, the atmosphere in the treatment chamber 201 is replaced with the inert gas (replacement of the inert gas), and the pressure in the treatment chamber 201 is restored to normal pressure (return to atmospheric pressure).
ガス供給管５１０，５２０，５３０のそれぞれからＮ２ガスを処理室２０１内へ供給し、排気管２３１から排気する。Ｎ２ガスはパージガスとして作用し、これにより処理室２０１内が不活性ガスでパージされ、処理室２０１内に残留するガスや副生成物が処理室２０１内から除去される（アフターパージ）。その後、処理室２０１内の雰囲気が不活性ガスに置換され（不活性ガス置換）、処理室２０１内の圧力が常圧に復帰される（大気圧復帰）。 (Atmosphere adjustment step S308)
The N 2 gas is supplied into the
（基板搬出工程Ｓ３０９）
その後、ボートエレベータ１１５によりシールキャップ２１９が下降されて、反応管２０３の下端が開口される。そして、処理済ウエハ２００がボート２１７に支持された状態で反応管２０３の下端から反応管２０３の外部に搬出（ボートアンロード）される。その後、処理済のウエハ２００は、ボート２１７より取り出される（ウエハディスチャージ）。 (Board unloading process S309)
After that, theseal cap 219 is lowered by the boat elevator 115 to open the lower end of the reaction tube 203. Then, the processed wafer 200 is carried out (boat unloading) from the lower end of the reaction tube 203 to the outside of the reaction tube 203 while being supported by the boat 217. After that, the processed wafer 200 is taken out from the boat 217 (wafer discharge).
その後、ボートエレベータ１１５によりシールキャップ２１９が下降されて、反応管２０３の下端が開口される。そして、処理済ウエハ２００がボート２１７に支持された状態で反応管２０３の下端から反応管２０３の外部に搬出（ボートアンロード）される。その後、処理済のウエハ２００は、ボート２１７より取り出される（ウエハディスチャージ）。 (Board unloading process S309)
After that, the
（３）実施形態による効果
本実施形態の例によれば、以下に示す１つまたは複数の効果を得ることができる。（ａ）ＴｉＮ膜上に密にＷ層を形成することができる。（ｂ）Ｗ膜の抵抗率を低下させることができる。例えば、図９の▲で示す様に、本技術によれば、従来技術◆に比べて、抵抗率を低減することが可能となる。（ｃ）被覆率（カバレッジ）を向上させつつ、抵抗率を向上させることが可能となる。 (3) Effect of the embodiment
According to the example of this embodiment, one or more of the following effects can be obtained. (A) The W layer can be densely formed on the TiN film. (B) The resistivity of the W film can be reduced. For example, as shown by ▲ in FIG. 9, according to this technique, it is possible to reduce the resistivity as compared with the conventional technique ◆. (C) It is possible to improve the resistivity while improving the coverage.
本実施形態の例によれば、以下に示す１つまたは複数の効果を得ることができる。（ａ）ＴｉＮ膜上に密にＷ層を形成することができる。（ｂ）Ｗ膜の抵抗率を低下させることができる。例えば、図９の▲で示す様に、本技術によれば、従来技術◆に比べて、抵抗率を低減することが可能となる。（ｃ）被覆率（カバレッジ）を向上させつつ、抵抗率を向上させることが可能となる。 (3) Effect of the embodiment
According to the example of this embodiment, one or more of the following effects can be obtained. (A) The W layer can be densely formed on the TiN film. (B) The resistivity of the W film can be reduced. For example, as shown by ▲ in FIG. 9, according to this technique, it is possible to reduce the resistivity as compared with the conventional technique ◆. (C) It is possible to improve the resistivity while improving the coverage.
以上、本開示の実施形態を具体的に説明した。しかしながら、本開示は、上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。
The embodiment of the present disclosure has been specifically described above. However, the present disclosure is not limited to the above-described embodiment, and various modifications can be made without departing from the gist thereof.
上述の第１の膜は、第１の元素を主成分とする膜を意味し、第２の膜は、第２の元素を主成分とする膜を意味し、第３の膜は第２の元素を主成分とする膜を意味する。なお、第１の元素として、Ｓｉを例に説明したが、１４族元素であれば、本開示の技術を適用できる可能性がある。例えば、ゲルマニウム（Ｇｅ）がある。また、第２の元素は、金属元素である。ここで、本開示における主成分とは、膜組成の原子比率が５０％以上となる膜を意味し、好ましくは９０％以上を構成する膜を意味する。膜組成の原子比率が増すことで、上述の反応効率が上がり、所望の膜を得ることが可能となる。
The above-mentioned first film means a film containing a first element as a main component, a second film means a film containing a second element as a main component, and a third film means a second film. It means a film whose main component is an element. Although Si has been described as an example as the first element, there is a possibility that the technique of the present disclosure can be applied to any Group 14 element. For example, there is germanium (Ge). The second element is a metal element. Here, the principal component in the present disclosure means a film having an atomic ratio of 50% or more in the film composition, and preferably a film constituting 90% or more. By increasing the atomic ratio of the film composition, the above-mentioned reaction efficiency is increased, and a desired film can be obtained.
上述では、第２処理ガスとしてＷＦ６を用いて説明したが、これに限らず、四塩化チタン（ＴｉＣｌ４）、四塩化タンタル（ＴａＣｌ４）、六塩化タングステン（ＷＣｌ６）、五塩化タングステン（ＷＣｌ５）、四塩化モリブデン（ＭｏＣｌ４）、四塩化ケイ素（ＳｉＣｌ４）、六塩化二ケイ素（Ｓｉ２Ｃｌ６、ヘキサクロロジシラン（HCDSＳ））等のハロゲン含有ガスおよびそれらを用いて形成される膜種に適用することができる。
In the above description, WF 6 is used as the second treatment gas, but the present invention is not limited to this, but titanium tetrachloride (TiCl 4 ), tantalum tetrachloride (TaCl 4 ), tungsten hexachloride (WCl 6 ), tungsten pentachloride (Titanium tetrachloride) ( Halogen-containing gas such as WCl 5 ), molybdenum tetrachloride (MoCl 4 ), silicon tetrachloride (SiCl 4 ), disilicon hexachloride (Si 2 Cl 6 , hexachlorodisilane (HCDSS)) and films formed using them. Can be applied to seeds.
なお、第２処理ガスは、ハロゲン元素と金属元素を含むガスであれば、ウエハ２００に形成された第１の膜としてのＳｉ膜と反応し、第１の膜を第２の膜に改質させられる可能性がある。ここで、ハロゲン元素とは、フッ素（Ｆ）、塩素（Ｃｌ）、臭素（Ｂｒ）、ヨウ素（Ｉ）である。金属元素は、例えば、タングステン（Ｗ）、チタニウム（Ｔｉ）、モリブデン（Ｍｏ）、ルテニウム（Ｒｕ）、アルミニウム（Ａｌ）、ハフニウム（Ｈｆ）、ジルコニウム（Ｚｒ）、ランタン（Ｌａ）、等である。
If the second treatment gas is a gas containing a halogen element and a metal element, it reacts with the Si film as the first film formed on the wafer 200, and the first film is modified into the second film. There is a possibility of being forced to. Here, the halogen element is fluorine (F), chlorine (Cl), bromine (Br), and iodine (I). The metal elements include, for example, tungsten (W), titanium (Ti), molybdenum (Mo), ruthenium (Ru), aluminum (Al), hafnium (Hf), zirconium (Zr), lantern (La), and the like.
また、上述では、第１処理ガスや、第１処理ガスとは異なる処理ガスとして、Ｓｉ系の原料として、ＳｉＨ４を用いて説明したが、これに限らず、ＳｉとＨを含む例えば、ジシラン（Ｓｉ２Ｈ６）、トリスジメチルアミノシラン（ＳｉＨ［Ｎ（ＣＨ３）２］３）等であっても良い。
Further, in the above description, SiH 4 is used as a Si-based raw material as a first treatment gas or a treatment gas different from the first treatment gas, but the present invention is not limited to this, and for example, disilane containing Si and H. (Si 2 H 6 ), trisdimethylaminosilane (Si H [N (CH 3 ) 2 ] 3 ) and the like may be used.
また、第１処理ガスは、上述のシラン系ガスを用いて、第１処理ガスとは異なる処理ガスとして、ハロシラン系のガスを用いても良い。このように、２種類の処理ガスを用いることで、膜の平坦性を向上させることが可能となる。ここで、ハロシラン系ガスとは、ハロゲン基を有するシラン系ガスのことである。ハロゲン基には、塩素（Ｃｌ）、フッ素（Ｆ）、臭素（Ｂｒ）、ヨウ素（Ｉ）等のハロゲン元素が含まれる。ハロシラン系ガスとしては、例えば、ＳｉおよびＣｌを含む原料ガス、すなわち、クロロシラン系ガスを用いることができる。クロロシラン系ガスは、Ｓｉソースとして作用する。クロロシラン系ガスとしては、例えば、ヘキサクロロジシラン（Ｓｉ２Ｃｌ６、略称：ＨＣＤＳ）ガス、ジクロロシラン（ＳｉＨ２Ｃｌ２、略称：ＤＣＳ）ガス、等を用いることができる。
Further, the above-mentioned silane-based gas may be used as the first treatment gas, and a halosilane-based gas may be used as a treatment gas different from the first treatment gas. In this way, by using two types of processing gases, it is possible to improve the flatness of the film. Here, the halosilane-based gas is a silane-based gas having a halogen group. Halogen groups include halogen elements such as chlorine (Cl), fluorine (F), bromine (Br) and iodine (I). As the halosilane-based gas, for example, a raw material gas containing Si and Cl, that is, a chlorosilane-based gas can be used. The chlorosilane-based gas acts as a Si source. As the chlorosilane-based gas, for example, hexachlorodisilane (Si2Cl6, abbreviation: HCDS) gas, dichlorosilane (SiH2Cl2, abbreviation: DCS) gas, and the like can be used.
また、上述では、第１処理ガスや、第１処理ガスとは異なる処理ガスとして、Ｓｉ系の原料を用いたが、Ｓｉ系に限らず、ホウ素（Ｂ）やリン（Ｐ）を含む原料であっても良い。例えば、ジボラン（Ｂ２Ｈ６）ガス、ホスフィン（ＰＨ３）ガス、等のガスを適用することができる。
Further, in the above description, a Si-based raw material is used as the first treatment gas or a treatment gas different from the first treatment gas, but the raw material is not limited to Si and contains boron (B) and phosphorus (P). There may be. For example, a gas such as diborane (B 2 H 6 ) gas, phosphine (PH 3 ) gas, etc. can be applied.
また、上述では、第３処理ガスとして、Ｈ２ガスを用いて説明したが、これに限るものでは無く、ハロゲン系材料を還元できるガスであれば良い。
Further, in the above description, H 2 gas has been used as the third treatment gas, but the present invention is not limited to this, and any gas that can reduce the halogen-based material may be used.
また、上述では、一度に複数枚の基板を処理するバッチ式の基板処理装置を用いて成膜を行う構成について説明したが、本開示はこれに限定されず、一度に１枚または数枚の基板を処理する枚葉式の基板処理装置を用いて成膜を行う場合にも、好適に適用できる。
Further, in the above description, the configuration in which the film formation is performed using a batch type substrate processing apparatus that processes a plurality of substrates at one time is described, but the present disclosure is not limited to this, and one or several substrates are processed at a time. It can also be suitably applied to the case where film formation is performed using a single-wafer type substrate processing apparatus for processing a substrate.
また、上述では、半導体基板としてのウエハを用いる例を示したが、他の材料で構成される基板。例えば、セラミック基板やガラス基板等の材料を用いた基板処理を行う場合にも適用することができる。
Further, in the above, an example of using a wafer as a semiconductor substrate is shown, but a substrate composed of other materials. For example, it can be applied to the case of performing substrate processing using a material such as a ceramic substrate or a glass substrate.
以上、本開示の種々の典型的な実施形態及び実施例を説明してきたが、本開示はそれらの実施形態及び実施例に限定されず、適宜組み合わせて用いることもできる。
Although various typical embodiments and examples of the present disclosure have been described above, the present disclosure is not limited to those embodiments and examples, and can be used in combination as appropriate.
１０ 基板処理装置
１２１ コントローラ
２００ ウエハ（基板）
２０１ 処理室
10Board processing device 121 Controller 200 Wafer (board)
201 processing room
１２１ コントローラ
２００ ウエハ（基板）
２０１ 処理室
10
201 processing room
Claims (15)
- 基板を処理室に収容する工程と、
前記基板に第１の元素を含む第１処理ガスを供給して、前記基板に第１の元素を含む第１の膜を形成する第１の成膜工程と、
前記第１の元素を含む膜に第２の元素を含む第２処理ガスを供給して、前記第１の膜から前記第１の元素を除去して前記第２の元素を含む第２の膜に改質する第２の成膜工程と、
を有する半導体装置の製造方法。 The process of accommodating the substrate in the processing chamber and
A first film forming step of supplying a first processing gas containing a first element to the substrate to form a first film containing the first element on the substrate.
A second processing gas containing the second element is supplied to the membrane containing the first element, the first element is removed from the first membrane, and the second membrane containing the second element is contained. The second film formation step to reform to
A method for manufacturing a semiconductor device having. - 前記第２の成膜工程では、前記第２処理ガスを連続して供給する請求項１に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein in the second film forming step, the second processing gas is continuously supplied.
- 前記第２の成膜工程では、前記第２処理ガスを間欠供給する請求項１に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein in the second film forming step, the second processing gas is intermittently supplied.
- 前記第２の成膜工程では、フラッシュタンクを介して前記第２処理ガスを供給する請求項１乃至３のいずれか一項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein in the second film forming step, the second processing gas is supplied via a flash tank.
- 前記第１の成膜工程では、前記第１処理ガスと、前記第１の元素を含み前記第１処理ガスとは異なる処理ガスを供給する工程を有する請求項１乃至４のいずれか一項に記載の半導体装置の製造方法。 According to any one of claims 1 to 4, the first film forming step includes a step of supplying the first treatment gas and a treatment gas containing the first element and different from the first treatment gas. The method for manufacturing a semiconductor device according to the description.
- 前記第１の成膜工程では、前記第１処理ガスと前記第１処理ガスとは異なる処理ガスとを、交互に供給する請求項５に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 5, wherein in the first film forming step, the first processing gas and a processing gas different from the first processing gas are alternately supplied.
- 前記第１処理ガスは、シリコンと水素を含みハロゲンを含まない原料であり、
前記第１処理ガスとは異なる処理ガスは、シリコンと水素とハロゲンを含む原料である請求項５または６に記載の半導体装置の製造方法。 The first treatment gas is a raw material containing silicon and hydrogen and not containing halogen.
The method for manufacturing a semiconductor device according to claim 5 or 6, wherein the processing gas different from the first processing gas is a raw material containing silicon, hydrogen, and halogen. - 前記第１処理ガスは、シラン系の原料であり、
前記第１処理ガスとは異なる処理ガスは、ハロシラン系の原料である請求項５または６に記載の半導体装置の製造方法。 The first treatment gas is a silane-based raw material and is
The method for manufacturing a semiconductor device according to claim 5 or 6, wherein the treatment gas different from the first treatment gas is a halosilane-based raw material. - 前記第２の膜に、前記第２処理ガスと第３処理ガスとを供給して、前記基板に第２の元素を含む第３の膜をさらに形成する第３の成膜工程と、を有する請求項１乃至８のいずれか一項に記載の半導体装置の製造方法。 It has a third film forming step of supplying the second treatment gas and the third treatment gas to the second film to further form a third film containing the second element on the substrate. The method for manufacturing a semiconductor device according to any one of claims 1 to 8.
- 前記第３の成膜工程では、前記第２処理ガスと前記第３処理ガスとを交互に供給する請求項９に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 9, wherein in the third film forming step, the second treated gas and the third treated gas are alternately supplied.
- 前記第１の元素は、１４族元素であり、前記第２の元素は、金属元素である請求項１乃至１０のいずれか一項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the first element is a group 14 element and the second element is a metal element.
- 前記第１の膜は、前記第１の元素を主成分とする膜であり、
前記第２の膜は、前記第２の元素を主成分とする膜である
請求項１乃至１１のいずれか一項に記載の半導体装置の製造方法。 The first film is a film containing the first element as a main component.
The method for manufacturing a semiconductor device according to any one of claims 1 to 11, wherein the second film is a film containing the second element as a main component. - 前記第３の膜は、前記第２の元素を主成分とする膜である
請求項９に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 9, wherein the third film is a film containing the second element as a main component. - 基板を処理する処理室と、
前記処理室内の前記基板に対して第１の元素を含む第１処理ガスを供給する第１処理ガス供給部と、
前記処理室内の前記基板に対して第２の元素を含む第２処理ガスを供給する第２処理ガス供給部と、
前記基板に対して前記第１処理ガスを供給して、前記基板に第１の元素を含む膜を形成する処理と、前記基板上の前記第１の元素を含む第１の膜に前記第２処理ガスを供給して、前記第１の膜から前記第１の元素を除去して前記第２の元素を含む第２の膜に改質する処理と、を行うように前記第１処理ガス供給部と前記第２処理ガス供給部とを制御するよう構成される制御部と、
を有する基板処理装置。 A processing room for processing the substrate and
A first processing gas supply unit that supplies a first processing gas containing the first element to the substrate in the processing chamber,
A second treatment gas supply unit that supplies a second treatment gas containing a second element to the substrate in the treatment chamber,
A process of supplying the first processing gas to the substrate to form a film containing the first element on the substrate, and the second film on the substrate containing the first element. The first processing gas is supplied so as to supply a treatment gas, remove the first element from the first film, and modify the second film containing the second element. A control unit configured to control the unit and the second processing gas supply unit,
Substrate processing equipment with. - 基板を処理室に収容させる手順と、
前記基板に第１の元素を含む第１処理ガスを供給して、前記基板に第１の元素を含む膜を成膜させる第１の成膜手順と、
前記第１の元素を含む第１の膜に第２の元素を含む第２処理ガスを供給して、前記第１の膜から前記第１の元素を除去して前記第２の元素を含む第２の膜に改質させる第２の成膜手順と、をコンピュータにより基板処理装置に実行させるプログラム。
The procedure for accommodating the substrate in the processing chamber and
The first film forming procedure of supplying the first processing gas containing the first element to the substrate to form a film containing the first element on the substrate.
A second processing gas containing the second element is supplied to the first film containing the first element, the first element is removed from the first film, and the second element containing the second element is contained. A program that causes a substrate processing apparatus to execute a second film forming procedure for modifying the film of 2 and a computer.
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| JP2021507220A JP7159446B2 (en) | 2019-03-20 | 2020-03-09 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, PROGRAM AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59189624A (en) * | 1983-04-12 | 1984-10-27 | Sumitomo Electric Ind Ltd | Electrode formation of silicon semiconductor device |
| JPH0461324A (en) * | 1990-06-29 | 1992-02-27 | Nec Corp | Method of selective vapor phase growth |
| JPH05308058A (en) * | 1992-03-17 | 1993-11-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0645275A (en) * | 1991-06-21 | 1994-02-18 | Citizen Watch Co Ltd | Manufacture of semiconductor device |
| JPH11340463A (en) * | 1988-02-18 | 1999-12-10 | Internatl Business Mach Corp <Ibm> | Method for converting semiconductor material, into high melting point metal and mos device fabricated using that method |
-
2020
- 2020-03-09 JP JP2021507220A patent/JP7159446B2/en active Active
- 2020-03-09 WO PCT/JP2020/010022 patent/WO2020189373A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59189624A (en) * | 1983-04-12 | 1984-10-27 | Sumitomo Electric Ind Ltd | Electrode formation of silicon semiconductor device |
| JPH11340463A (en) * | 1988-02-18 | 1999-12-10 | Internatl Business Mach Corp <Ibm> | Method for converting semiconductor material, into high melting point metal and mos device fabricated using that method |
| JPH0461324A (en) * | 1990-06-29 | 1992-02-27 | Nec Corp | Method of selective vapor phase growth |
| JPH0645275A (en) * | 1991-06-21 | 1994-02-18 | Citizen Watch Co Ltd | Manufacture of semiconductor device |
| JPH05308058A (en) * | 1992-03-17 | 1993-11-19 | Fujitsu Ltd | Manufacture of semiconductor device |
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| JPWO2020189373A1 (en) | 2021-12-02 |
| JP7159446B2 (en) | 2022-10-24 |
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