WO2020165164A1 - Composant optoélectronique - Google Patents

Composant optoélectronique Download PDF

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Publication number
WO2020165164A1
WO2020165164A1 PCT/EP2020/053460 EP2020053460W WO2020165164A1 WO 2020165164 A1 WO2020165164 A1 WO 2020165164A1 EP 2020053460 W EP2020053460 W EP 2020053460W WO 2020165164 A1 WO2020165164 A1 WO 2020165164A1
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WO
WIPO (PCT)
Prior art keywords
conversion elements
semiconductor chip
optoelectronic
housing
optoelectronic component
Prior art date
Application number
PCT/EP2020/053460
Other languages
German (de)
English (en)
Inventor
Siegfried Herrmann
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to DE112020000786.3T priority Critical patent/DE112020000786A5/de
Publication of WO2020165164A1 publication Critical patent/WO2020165164A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Definitions

  • An optoelectronic component is specified.
  • One problem to be solved is to specify an optoelectronic component with a precisely adjustable color locus.
  • the latter comprises an optoelectronic component
  • a semiconductor chip is a chip that can be handled separately and is electrical
  • a semiconductor chip is preferably created by singulation from a composite wafer.
  • side faces have such
  • the semiconductor chip preferably comprises exactly one originally contiguous region of the semiconductor layer sequence grown in the wafer assembly.
  • the semiconductor layer sequence of the semiconductor chip is preferably formed in a contiguous manner. A lateral expansion of the semiconductor chip, measured parallel to the main extension plane of the
  • the optoelectronic component further comprises a housing, for example a reflective housing.
  • the housing can comprise an electrically insulating housing body, for example made of plastic or epoxy or silicone, in which
  • reflective particles such as titanium dioxide particles
  • the housing further comprises a lead frame, in particular a two-pole one
  • the lead frame can be embedded in the case body.
  • the poles of the lead frame can be electrically isolated from one another by the housing body.
  • the optoelectronic semiconductor chip comprises a semiconductor layer sequence.
  • the semiconductor layer sequence is preferably contiguous, in particular simple
  • the semiconductor layer sequence is based, for example, on a III-V
  • the semiconductor material is, for example, a nitride compound semiconductor material such as Al n In ] __ nm Ga m N, or a phosphide compound semiconductor material such as Al n In ] __ n _ m Ga m P, or an arsenide Compound semiconductor material, such as Al n In ] __ nm Ga m As or Al n In ] __ nm Ga m AsP, or an antimonide compound semiconductor material, such as Al n In ] __ nm Ga m Sb, or an antimonide-arsenide compound semiconductor material, where 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and m + n ⁇ 1 in each case.
  • a nitride compound semiconductor material such as Al n In ] __ nm Ga m N
  • a phosphide compound semiconductor material such as Al n In ] __ n _ m Ga m P
  • the semiconductor layer sequence can have dopants and additional components.
  • the essential components of the crystal lattice of the semiconductor layer sequence i.e. Al, As, Ga, In, N or P, indicated, even if these can be partially replaced and / or supplemented by small amounts of other substances.
  • the semiconductor layer sequence is preferably based on AlInGaN.
  • the active layer of the semiconductor layer sequence contains in particular at least one pn junction and / or at least one quantum well structure in the form of a single one
  • Quantum Pot SQW for short, or in the form of a
  • the active layer can be electromagnetic in normal operation
  • the active layer of the semiconductor layer sequence can be formed contiguously.
  • Expansion of the active layer is for example
  • the conversion elements are preferably formed from semiconductor material, for example from one of the aforementioned III-V compound semiconductor materials or from a II-VI compound semiconductor material.
  • the conversion elements each have an active area.
  • the conversion elements can each comprise two semiconductor sections, between which the active area is arranged. The semiconductor sections on
  • the active area of the Conversion elements are each shaped three-dimensionally.
  • An interface between the active region and an adjoining semiconductor section is, for example, not continuously flat, but rather, for example, curved or has edges.
  • the interface has, for example, the shape of the lateral surface of a cone or a truncated cone or a pyramid or a truncated pyramid.
  • the conversion elements are preferably not connected to one another, but rather are arranged separately and at a distance from one another.
  • the conversion elements or a subset of the conversion elements are in one level
  • Conversion elements can for example be arranged regularly or irregularly along this plane.
  • the primary radiation and the secondary radiation comprise different ones
  • Wavelength ranges The conversion elements absorb the primary radiation. At a
  • Intensity maximum of the emitted secondary radiation at a wavelength which is at least 50 nm or at least 100 nm or at least 150 nm or at least 200 nm longer than the wavelength at which the primary radiation has its maximum intensity.
  • the wavelength at which the primary radiation has its maximum intensity is at least 50 nm or at least 100 nm or at least 150 nm or at least 200 nm longer than the wavelength at which the primary radiation has its maximum intensity.
  • the conversion elements can each be designed as a nanorod or as a microrod, in English nanorod or microbar.
  • Conversion elements are, for example, elongated
  • Nanorods have a diameter of for example
  • Microrods have for
  • the nanorods or micro-rods can each have the shape of a square or hexagonal obelisk or a pyramid or a cone or a cylinder
  • the conversion elements are, for example, in all lateral directions parallel to the main plane of extent of the semiconductor layer sequence or in all spatial directions completely different from the
  • the semiconductor layer sequence has grown on a growth substrate.
  • the growth substrate is part of the semiconductor chip. For example, they are then
  • the semiconductor chip Arranged semiconductor layer sequence. Then the semiconductor chip is a so-called one, for example
  • the semiconductor chip is devoid of one
  • the semiconductor chip is in particular a thin-film chip.
  • the semiconductor chip can then comprise, for example, a carrier on which the
  • the carrier stabilizes the semiconductor layer sequence in particular.
  • the carrier can be electrically conductive.
  • the carrier can be a silicon carrier or plastic carrier or
  • the carrier can also have a number of ceramic carriers.
  • the carrier can also have a number of ceramic carriers.
  • the optoelectronic semiconductor chip mounted in a recess of the housing. Laterally, that is, in the lateral direction, the semiconductor chip is made up of reflective inner surfaces
  • Enclosed housing preferably completely surrounded. Of the Semiconductor chip is, for example, mounted and electrically connected on a mounting surface of the housing which forms a bottom surface of the recess.
  • the inner surfaces preferably run transversely or perpendicular to the mounting surface.
  • the recess has the shape of a
  • Manufacturing tolerance is flat and defines the lateral surface of the truncated cone.
  • Inner surfaces be concave.
  • the recess then has the shape of a paraboloid of revolution, for example.
  • curved inner surfaces can be spherically or aspherically curved.
  • the semiconductor chip is preferably completely in the
  • the recess is deeper than the height or thickness of the semiconductor chip, for example.
  • the housing then preferably protrudes beyond the semiconductor chip in directions perpendicular to the main extension plane of the semiconductor chip.
  • the reflective inner surfaces of the recess face the semiconductor chip.
  • the semiconductor chip For example, the
  • Semiconductor chip is emitted, is thrown back from the inner surfaces of the recess.
  • the recess For example, the
  • Semiconductor chip emitted radiation at least 60% or at least 70% or at least 80% or at least 90%.
  • the inner surfaces can be provided with a coating, for example.
  • the coating includes a Metal, such as aluminum, silver, chromium or nickel or a metallic alloy with at least one of these materials.
  • the reflective inner surfaces are set up to reflect and deflect radiation which is emitted in the lateral direction by the semiconductor chip, in particular by side surfaces of the semiconductor chip.
  • Inner surfaces are in particular designed so that a large part of the reflected radiation passes through the recess of the
  • this includes
  • optoelectronic component an optoelectronic
  • optoelectronic semiconductor chip comprises a
  • Semiconductor layer sequence with an active layer that generates primary radiation during normal operation and several conversion elements.
  • the conversion elements are set up to convert the primary radiation into a
  • the conversion elements are each designed as a nanorod or microrod.
  • Conversion elements are embedded in the semiconductor layer sequence.
  • the semiconductor chip is mounted in a recess of the housing and is laterally reflective
  • the present invention is in particular based on the idea of a semiconductor chip in which conversion elements are in the semiconductor layer sequence of the semiconductor chip
  • the radiation emitted by the semiconductor chip can be radiated in a directional manner.
  • Conversion elements the intensity and / or the color location of the optoelectronic component can be set precisely.
  • the arrangement of the conversion elements can, for example, cause unwanted reabsorption of already
  • the conversion elements comprise first
  • the first conversion elements are set up to convert the primary radiation into a first secondary radiation
  • the second conversion elements are set up to convert the primary radiation into a second
  • the first conversion elements are part of the
  • Manufacturing tolerance all have the same structure.
  • the first and second secondary radiation and the primary radiation are different from one another in pairs.
  • the distance can be at least 200 nm.
  • primary radiation it can be
  • Conversion elements have a scattering cross section of at most 10 micrometers, for example of at most 2 gm x 5 gm.
  • the conversion elements have such a scattering cross-section for radiation that is partially or completely in a lateral direction, i.e. parallel to the
  • the optoelectronic semiconductor chip on an emission side.
  • the emission side extends in
  • the emission side is preferably facing away from the housing, in particular the mounting surface of the housing.
  • Emission side a first section and a second
  • the first section and the second section are therefore partial areas of the emission side.
  • the first section and the second section are each designed to be simply connected and do not overlap with one another. According to at least one embodiment, the first
  • first section only overlaps with first conversion elements and the second section only overlaps with second conversion elements.
  • first section and the second section are each at least ten or at least 100
  • the first conversion elements are spatially, in particular laterally, arranged separately from the second conversion elements.
  • the spatially separated first conversion elements are spatially, in particular laterally, arranged separately from the second conversion elements.
  • Primary radiation, the first secondary radiation and / or the second secondary radiation can be achieved.
  • first sections and / or several second sections Emission side several first sections and / or several second sections.
  • the first sections and the second sections are each designed to be simply connected and do not overlap with one another.
  • the first sections do not overlap with one another
  • second sections do not overlap one another and the first and second sections do not overlap one another.
  • the sections are therefore disjoint in pairs.
  • conversion elements there are at least ten or at least 100 first conversion elements in every first section and at least ten or at least 100 second conversion elements in every second section
  • the first and second sections can be in
  • the first and second sections form a striped pattern or a checkerboard pattern.
  • the first and second sections can each be designed to be rectangular when viewed from above.
  • the first and second sections can each have a hexagonal shape when viewed in plan.
  • the first and second sections can form a hexagonal pattern.
  • Conversion area to which conversion elements are assigned.
  • the conversion area forms part of the
  • Extension of the conversion area at least 50% or at least 75% of a lateral extension of the
  • another such optoelectronic semiconductor chip is mounted in the recess of the housing.
  • the other optoelectronic semiconductor chip is mounted in the recess of the housing.
  • Semiconductor chip can have all the features that were disclosed for the optoelectronic semiconductor chip described above.
  • the first and second conversion elements can have the features described above for the first and second conversion elements
  • this includes
  • Controlled pixel electromagnetic radiation In this case it is the optoelectronic component for example a pixelated radiation source.
  • the component comprises at least four or at least ten or at least 100 pixels.
  • this includes
  • Each individual optoelectronic semiconductor chip can have the features that were previously disclosed for the optoelectronic semiconductor chip.
  • Each pixel is preferably an optoelectronic one
  • the pixels are arranged in the lateral plane at a distance of at most 0.5 ⁇ m from one another.
  • a plurality of the optoelectronic semiconductor chips do not include any
  • Optoelectronic semiconductor chips arranged without a conversion element adjacent to the optoelectronic semiconductor chips with a conversion element can only leave the housing in a region of the optoelectronic semiconductor chips that have a conversion element
  • the housing includes one or more windows for this purpose, so that in a plan view of the housing only semiconductor chips are located in the area of a window that
  • the optoelectronic semiconductor chip is a pixelated semiconductor chip in which each pixel has one
  • the pixels can each be operated individually and independently of one another.
  • the pixels can be via suitable control electronics, in particular a
  • Microchip to be controllable The color locus of a pixilated optoelectronic component can thus advantageously be specified particularly precisely.
  • the recess of the housing only partially.
  • the mounting surface of the housing has a lateral extension of, for example, 102% or 105% of the lateral extension of the
  • the reflective inner surfaces have an angle of incidence of a maximum of 5 °, the lateral extent of the mounting side corresponding to the lateral extent of the semiconductor layer sequence within the manufacturing tolerance.
  • the angle of incidence is the angle that the reflective inner surfaces assume with a direction transverse to the mounting side of the housing.
  • the recess is filled with a potting compound that reshapes the semiconductor chip.
  • the potting comprises silicone, in particular clear silicone, or is formed from it.
  • the encapsulation can comprise a matrix material, for example silicone, in which
  • Converter particles or scattering particles are embedded.
  • the converter particles are set up, for example, to convert radiation that is emitted by the semiconductor chip into
  • the radiation emitted by the optoelectronic component has a deviation in the far field of at most 0.5 MacAdams ellipses, the deviation being given by the difference between the color impression in the center of an observation area and the color impression at the edge of an observation area.
  • the observation area lies, for example, in a plane parallel to the main plane of extent of the
  • Semiconductor layer sequence and has, for example, a lateral extent that is a thousand times greater than the lateral extent of the semiconductor layer sequence.
  • the conversion elements have a height of at most 4 ⁇ m, measured along a direction transverse or perpendicular to the main extension plane of the
  • the optoelectronic semiconductor chip is a thin-film chip.
  • Such an optoelectronic component can be used, for example, in a high-current system, such as, for example, in a headlight, in particular in a so-called m-AFS system.
  • the optoelectronic component comprises at least one optical element, wherein the optical element is part of the housing
  • Beam direction is subordinate.
  • the direction of radiation is the direction in which radiation emitted in the
  • Housing is emitted.
  • a surface of the optical element which faces the housing has a lateral extent which corresponds to the lateral extent of the semiconductor layer sequence.
  • the distance between the conversion elements and the mounting surface of the housing is at most 5 gm or at most 2 gm.
  • the distance is preferably at most 1 ⁇ m.
  • the distance is measured in a direction transverse or perpendicular to the mounting surface.
  • a layer of the semiconductor layer sequence forms the
  • Conversion elements includes one side of the
  • the housing forms in the area of
  • Component especially in high current applications, can be increased.
  • FIGS. 1A to IC and 4 to 7 exemplary embodiments of the optoelectronic component in different views
  • FIGS. 2A and 2B show exemplary embodiments of the optoelectronic semiconductor chip in different views
  • FIGS. 8A to 8C show exemplary embodiments of the optoelectronic component in detail views.
  • the optoelectronic component 300 comprises an optoelectronic semiconductor chip 100.
  • the semiconductor chip 100 comprises a growth substrate 3,
  • a semiconductor layer sequence 1 with an active layer 10 has grown on the growth substrate 3.
  • the semiconductor layer sequence 1 is based, for example, on a nitride compound semiconductor material.
  • the active layer 10 generates primary radiation during operation, for example in the blue spectral range.
  • Conversion elements 21, 22 in the form of nanorods or microrods are shown in FIG.
  • Conversion elements 21, 22 are based, for example, on a nitride compound semiconductor material.
  • the radiation generated by the semiconductor chip 100 during operation, for example a mixture of primary radiation and secondary radiation, is largely emitted from the semiconductor chip via an emission side 101
  • Semiconductor chip 100 is mounted in a recess of housing 200 on a mounting surface of housing 200.
  • Housing 200 has a lead frame 201 and a
  • Housing body 202 In the present case, the lead frame 201 has two poles.
  • the housing body 202 is designed to be electrically insulating, reshapes the lead frame 201 and separates the poles of the lead frame 201 from one another.
  • the lead frame 201 comprises
  • Housing body 202 is made of plastic, for example.
  • the housing 200 further comprises reflective
  • Inner surfaces 205 which laterally delimit the recess and which laterally surround the semiconductor chip 100.
  • Reflective inner surfaces 205 are designed to reflect radiation that emerges in particular through the side surfaces of the semiconductor chip 100. The radiation is reflected out of the recess in a direction away from the mounting surface.
  • Semiconductor layer of the semiconductor layer sequence 1, in which the conversion elements 21, 22 are embedded, is structured.
  • the interface has a large number of elevations and depressions, for example.
  • the elevations lie, for example, in a vertical direction, perpendicular to the main plane of extent of the semiconductor conductor layer sequence 1, on a line with the longitudinal axes of the conversion elements 21, 22.
  • the emission side 101 has structures.
  • the emission side 101 has the same structures as the interface of the active one
  • the recesses are, for example, so-called "V-pit structures".
  • the V-pit structures can extend up to
  • the main plane of extent of the active layer 10 extend or can penetrate the main plane of extent of the active layer 10.
  • FIG 1B is an embodiment of the figure
  • FIG. 300 A further exemplary embodiment of the optoelectronic component 300 is shown in perspective in FIG.
  • two optoelectronic semiconductor chips 100 are mounted in a recess of a housing 200.
  • the reflective inner surfaces 205 of the housing 200 completely surround the semiconductor chips 100 in the lateral direction.
  • the semiconductor chips 100 have different
  • the optoelectronic semiconductor chip 100 shown on the right in the figure comprises only first conversion elements 21.
  • the other optoelectronic semiconductor chip 100 comprises only second conversion elements 22.
  • the first conversion elements 21 differ from the second conversion elements 22 with regard to the
  • the first conversion elements 21 convert the primary radiation into a first one
  • Secondary radiation and the second conversion elements 22 convert the primary radiation into a second
  • the first secondary radiation and the second secondary radiation are different from one another.
  • FIGS. 2A and 2B show an exemplary embodiment of the optoelectronic semiconductor chip 100 in a side view and a perspective view.
  • the semiconductor chip 100 acts it is, for example, a semiconductor chip 100 as shown in FIGS. 1A to IC.
  • the first conversion element 21 comprises a first semiconductor section 211 in the form of a core.
  • the first semiconductor section 211 is coated with an active region 210.
  • the active area 210 serves to absorb and / or emit electromagnetic radiation.
  • the active area 210 is of a second one
  • Semiconductor section 212 encased in the form of a layer.
  • the present figure shows the remains of a mask 25 which was used to grow the first conversion element 21.
  • the conversion elements can be core-shell rods, for example
  • Conversion elements are each between a first
  • the active areas 210 of the conversion elements can each be designed in the form of a multi-quantum well.
  • a further exemplary embodiment of the optoelectronic component 300 is shown in plan view in FIG.
  • Two optoelectronic semiconductor chips 100 are attached in a recess of the housing 200 that is round in plan view. Both semiconductor chips 100 each include first
  • Emission sides 101 of the semiconductor chips 100 include first sections 21a and second sections 22a.
  • Sections 21a and the second sections 22a are partial areas of the emission side 101.
  • the emission side 101 of the semiconductor chip 100 shown at the top in the figure comprises exactly one first section 21a and exactly one second section 22a.
  • the first section 21a and the second section 22a are each simply connected
  • All first conversion elements 21 are in the first section 21a
  • the lower semiconductor chip 100 in the present figure comprises two first sections 21a and two second sections 22a. Only first conversion elements 21 are assigned to the first sections 21a and only second conversion elements are assigned to the second sections 22a.
  • Sections 21a, 22a have a rectangular contour and are arranged in a striped pattern. Furthermore, the individual sections 21a, 22a are each designed to be simply connected and do not overlap with one another.
  • a further exemplary embodiment of the optoelectronic component 300 is shown in plan view in FIG. As shown in FIG. 4, two semiconductor chips 100 are in the present case mounted in the recess of the housing 200. By both
  • Semiconductor chips 100 is the emission side 101 in a first section 21a and a second section 22a
  • all first conversion elements 21 are the respective first section 21a and all second conversion elements 22 are the respective assigned to the second section 22a.
  • Another example is the first section 21a of a semiconductor chip 100 compared to the first section 21a
  • Semiconductor chips 100 arranged.
  • the second sections 22a of the semiconductor chips 100 face away from one another. This creates a spatial separation of the first and second
  • Reabsorption of already converted primary radiation can be further reduced.
  • FIG. 6 shows a further exemplary embodiment of the optoelectronic component 300 in a cross-sectional view.
  • FIG. 6 essentially shows the same features as FIG. 1A with the difference that the semiconductor chip 100 is encapsulated by a potting 230.
  • the encapsulation 230 comprises a matrix material such as silicone in the
  • Converter particles are embedded.
  • the converter particles are set up to convert radiation that is emitted by the semiconductor chip 100 into radiation of longer wavelength.
  • FIG. 7 shows a further optoelectronic component 300 in which the recess in the housing body 200 is additionally filled with an encapsulation 230.
  • the potting 230 can be
  • a converter layer 231 is on the potting 230
  • the converter layer 231 can for example comprise a matrix material in which converter particles
  • the converter layer 231 is formed, for example, by a converter plate.
  • FIG 8A is an embodiment of the
  • the optoelectronic component 300 comprises an optoelectronic semiconductor chip 100, which has a semiconductor layer sequence 1 with a first
  • semiconductor layer 11 a second semiconductor layer 12 and an active layer 10 comprises.
  • the first semiconductor layer 11 is, for example, an n-conductive layer and the second semiconductor layer 12 is, for example, a p-conductive layer.
  • the semiconductor layer sequence 1 further comprises first 21 and second conversion elements 22.
  • the optoelectronic component 300 comprises a housing 200.
  • reflective inner surfaces 205 of the housing 200 are not shown.
  • the housing comprises a housing body 202, which is formed, for example, from silicon or a ceramic. Outer surfaces of the housing body 202 can be designed to be reflective, at least in places.
  • the optoelectronic semiconductor chip 100 comprises a first electrode 410, which is electrically conductively connected to a first contact element 41.
  • the first contact element 41 is part of the housing 200 and is arranged on the side of the housing body 202 which is opposite the optoelectronic semiconductor chip 100.
  • the first semiconductor section 11 can be supplied with current by means of the first electrode 410 via vias 411.
  • a mirror layer 7 functions as a second electrode 420 which is electrically conductively connected to a second contact element 42 and via which the second semiconductor layer 12 can be energized.
  • the second contact element 42 is electrically connected to the second contact element 421 of the housing 200 by means of a contact wire 43 conductively connected.
  • the second contact element 421 is formed on the side of the housing body 202 facing the optoelectronic semiconductor chip 100.
  • an electrically insulating insulation layer 8 separates the first electrode 410 from the second electrode 420.
  • the optoelectronic semiconductor chip 100 of the present exemplary embodiment is, for example, a thin-film chip that is free of a growth substrate.
  • the optoelectronic component 300 of the exemplary embodiment can be in a headlight, such as a
  • Vehicle headlights find application.
  • FIG. 8B essentially shows the same features as FIG. 8A with the difference that the second contact element 421 of the housing 200 is arranged on the side of the housing that faces away from the optoelectronic semiconductor chip 100.
  • FIG. 8C A further exemplary embodiment of an optoelectronic component 300 is shown in FIG. 8C.
  • the second electrode 42 is on a side facing the housing 200
  • the optoelectronic semiconductor chip 100 comprises a sapphire substrate 232.
  • the optoelectronic semiconductor chip 100 is a sapphire flip chip.
  • the housing of the optoelectronic component 300 comprises a potting 230, which in the present case is set up for the purpose of radiation, which the optoelectronic semiconductor chip 100 through a side transversely to the main plane of extent of the
  • encapsulation includes, for example, a matrix material such as silicone in the reflective particles, for example
  • Titanium dioxide particles are embedded. Like in
  • the component is facing away from optoelectronic semiconductor chip 100.
  • the component can therefore be surface-mounted.
  • Optoelectronic component 300 is found, for example, in one
  • Headlights especially in a headlight for

Abstract

Dans au moins un mode de réalisation, le composant optoélectronique (300) comprend une puce semi-conductrice optoélectronique (100) et un boîtier réfléchissant (200). La puce semi-conductrice optoélectronique comprend une séquence de couches de semi-conducteur (1) comprenant une couche active (10), qui génère un rayonnement primaire durant le fonctionnement conforme, et plusieurs éléments de conversion (21, 22). Les éléments de conversion (21, 22) sont conçus pour convertir le rayonnement primaire en un rayonnement secondaire. Les éléments de conversion (21, 22) sont réalisés respectivement sous forme de nanotiges ou microtiges. Les éléments de conversion (21, 22) sont intégrés dans la séquence de couches de semi-conducteur (1). La puce semi-conductrice (100) est montée dans une cavité du boîtier (200) et entourée latéralement par la surface interne (205) réfléchissante du boîtier (200).
PCT/EP2020/053460 2019-02-12 2020-02-11 Composant optoélectronique WO2020165164A1 (fr)

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DE102016101442A1 (de) * 2016-01-27 2017-07-27 Osram Opto Semiconductors Gmbh Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement

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JP2009009978A (ja) * 2007-06-26 2009-01-15 Panasonic Electric Works Co Ltd 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
EP2242120A1 (fr) * 2009-04-16 2010-10-20 Samsung Electronics Co., Ltd. Dispositif électroluminescent blanc
WO2010146390A2 (fr) * 2009-06-19 2010-12-23 Seren Photonics Limited Diodes électroluminescentes
EP2571065A1 (fr) * 2010-12-08 2013-03-20 EL-Seed Corporation Dispositif à semi-conducteur à nitrure du groupe iii et procédé de fabrication associé
DE102013200509A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
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