WO2020136713A1 - Method for manufacturing light-emitting device - Google Patents

Method for manufacturing light-emitting device Download PDF

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Publication number
WO2020136713A1
WO2020136713A1 PCT/JP2018/047548 JP2018047548W WO2020136713A1 WO 2020136713 A1 WO2020136713 A1 WO 2020136713A1 JP 2018047548 W JP2018047548 W JP 2018047548W WO 2020136713 A1 WO2020136713 A1 WO 2020136713A1
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WIPO (PCT)
Prior art keywords
particles
substrate
voltage
electrode
layer
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PCT/JP2018/047548
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French (fr)
Japanese (ja)
Inventor
惇 佐久間
康 浅岡
青森　繁
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シャープ株式会社
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Priority to PCT/JP2018/047548 priority Critical patent/WO2020136713A1/en
Publication of WO2020136713A1 publication Critical patent/WO2020136713A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots

Definitions

  • the present invention relates to a method for manufacturing a light emitting device, in which a functional layer of the light emitting device is formed by electrodeposition.
  • Patent Document 1 discloses a method of forming an organic light emitting layer by an electrodeposition method in the production of an organic light emitting element.
  • a method for producing a light emitting device of the present invention is a method for producing a light emitting device in which functional particles are electrodeposited on a substrate electrode formed on a substrate, the substrate and the substrate A substrate gripping step of sandwiching an electrodeposition liquid containing first particles and second particles different from the first particles as the functional particles between the counter electrodes arranged in parallel; A first film forming step of applying a first voltage between the first substrate electrode of the substrate electrodes and the counter electrode to form the first particles on the first substrate electrode; Subsequent to the first film forming step, a second voltage is applied between the second substrate electrode of the substrate electrodes and the counter electrode to form the second particles on the second substrate electrode. A second film forming step, wherein the absolute value of the first voltage is smaller than the absolute value of the second voltage.
  • the tact time in manufacturing a light emitting device can be shortened.
  • FIG. 6A to 6D are process cross-sectional views for explaining the method for manufacturing the light-emitting device according to the first embodiment of the present invention. It is a schematic diagram of a substrate concerning Embodiment 1 of the present invention.
  • 1 is a schematic diagram of a light emitting device manufacturing apparatus according to a first embodiment of the present invention.
  • FIG. 3 is a schematic view of the manufacturing apparatus of the light emitting device according to Embodiment 1 of the present invention in a state where the substrate is pressed against the electrodeposition tank.
  • 3 is a flowchart illustrating a method of manufacturing the light emitting device according to the first embodiment of the invention.
  • FIG. 3 is a schematic view of functional particles contained in the electrodeposition liquid according to the first embodiment of the present invention.
  • FIG. 7 is a graph showing a relationship between applied voltage and elapsed time in an electrodeposition process using the light emitting device manufacturing apparatus according to the first embodiment and the modification of the present invention.
  • FIG. 3 is a cross-sectional view of the light-emitting device manufacturing apparatus and the substrate for explaining the problems in the light-emitting device manufacturing method according to the first embodiment of the present invention. It is the schematic of the board
  • FIG. 6 is a flowchart illustrating a method for manufacturing a light emitting device according to a second embodiment of the invention.
  • FIG. 6 is a process cross-sectional view for explaining an electrodeposition process according to Embodiment 2 of the present invention.
  • FIG. 7 is a process cross-sectional view for explaining an electrodeposition process using the display device manufacturing apparatus according to the second embodiment of the present invention in comparison with an electrodeposition process using the display device manufacturing apparatus according to the comparative embodiment.
  • 6 is a flowchart for explaining a method for manufacturing a light emitting device according to Embodiment 3 of the present invention.
  • FIG. 6 is a process cross-sectional view for explaining an electrodeposition process according to Embodiment 3 of the present invention.
  • FIG. 2 is a schematic perspective view of the substrate C according to this embodiment.
  • the substrate C includes a single flat electrode U and an electrodeposition bath connection electrode D as substrate electrodes.
  • the flat electrode U is formed on the substrate C so as to be exposed on one of the surfaces of the substrate C.
  • the plane electrode U is formed in a rectangular shape on the substrate C.
  • the electrodeposition bath connecting electrode D is formed on any two sides of the substrate C orthogonal to each other on the surface of the substrate C on which the planar electrode U is formed. Since the flat electrode U and the electrodeposition bath connecting electrode D are electrically connected to each other, a voltage can be applied to the flat electrode U by applying a voltage to the electrodeposition bath connecting electrode D. As long as the electrodeposition bath connection electrode D is formed on the surface of the substrate C on which the planar electrode U is formed, the electrodeposition bath connection electrode D is not limited to be formed along two orthogonal sides of the substrate C, but also the substrate C. The shape is not particularly limited, such as being provided only along any one of the sides.
  • the flat electrode U and the electrodeposition bath connection electrode D are flush with the surface of the substrate C on which the flat electrode U and the electrodeposition bath connection electrode D are formed, and are exposed at the surfaces.
  • FIG. 3 is a schematic diagram of the light emitting device manufacturing apparatus 2 according to the present embodiment.
  • FIG. 3A is a perspective view of the light emitting device manufacturing apparatus 2.
  • FIG. 3B is a top view of the light emitting device manufacturing apparatus 2.
  • 3C is a cross-sectional view taken along the line AA in FIG. It should be noted that FIG. 3A illustrates a state where the substrate C is installed in the light emitting device manufacturing apparatus 2. However, for simplicity of illustration, the illustration of the substrate C is omitted in FIGS. 3B and 3C.
  • the top view of the light-emitting device manufacturing apparatus 2 in each drawing is a top view at a position corresponding to (b) of FIG. 3 unless otherwise specified.
  • the cross-sectional view of the light-emitting device manufacturing apparatus 2 in each drawing is a cross-sectional view at a position corresponding to (c) of FIG. 3 unless otherwise specified.
  • the light emitting device manufacturing apparatus 2 includes an electrodeposition tank 4, a bottom electrode 8, a pressing unit 10, and an electrodeposition power source 12.
  • the electrodeposition tank 4 includes an outer side surface 14 that defines the outer shape of the electrodeposition tank 4, and an inner side surface 16 and a bottom surface 18 that define the inside 4A of the electrodeposition tank 4.
  • An edge portion 20 is defined between the outer side surface 14 and the inner side surface 16.
  • a plurality of substrate connecting electrodes 22 are formed on the upper surface of the edge portion 20. That is, a plurality of substrate connecting electrodes 22 are formed on the outer periphery of the electrodeposition tank 4.
  • the bottom electrode 8 is formed on the bottom surface 18 of the electrodeposition tank 4.
  • the bottom surface electrode 8 is flush with the bottom surface 18 and is exposed from the bottom surface 18. Further, when the substrate C is installed in the light emitting device manufacturing apparatus 2, the bottom surface electrode 8 serves as a counter electrode facing the flat electrode U formed on the substrate C.
  • the pressurizing unit 10 has a mechanism for moving at least one of the substrate C and the electrodeposition tank 4 to control the relative distance between the substrate C and the electrodeposition tank 4.
  • the substrate C is placed in the manufacturing apparatus 2 for a light emitting device by disposing the substrate C in the pressure unit 10.
  • the substrate C is disposed so that the planar electrode U of the substrate C faces the bottom electrode 8 of the electrodeposition tank 4 in parallel.
  • the pressing unit 10 may be, for example, a vacuum chuck that holds the substrate C.
  • the pressurizing unit 10 may control the relative distance between the substrate C and the electrodeposition tank 4 by moving the substrate C with respect to the electrodeposition tank 4.
  • the pressurizing unit 10 can bring the substrate C and the electrodeposition tank 4 close to each other until the substrate C and the electrodeposition tank 4 come close to each other.
  • 4A and 4B are schematic diagrams corresponding to FIGS. 3A and 3C in a state where the substrate C and the electrodeposition tank 4 are pressed against each other. Shown respectively. 4B, the cross section of the substrate C is also illustrated.
  • the bottom electrode 8 faces the flat electrode U of the substrate C via the inside 4A, as shown in FIG. 4(b). That is, when the substrate C and the electrodeposition tank 4 are pressed against each other, the inside 4A is sandwiched between the substrate C and the bottom electrode 8 that is parallel to the substrate C.
  • the electrode 22 for connecting the substrate of the electrodeposition bath 4 and the electrode D for connecting the electrodeposition bath of the substrate C come into contact with each other and become electrically conductive with each other.
  • the electrodeposition bath 4 serves to assist the electrical continuity between the substrate connection electrode 22 and the electrodeposition bath connection electrode D.
  • a spring 38 that pushes up the substrate connection electrode 22 may be provided below each substrate connection electrode 22.
  • the interior 4A defined by the side surface 16 and the bottom surface 18 has a distance d1 from the upper surface of the edge portion 20 to the upper surface of the bottom electrode 8.
  • This distance d1 corresponds to the depth of the interior 4A, and as shown in FIG. 4B, when the substrate C and the electrodeposition bath 4 are pressed against each other, the bottom electrode 8 and the flat electrode U are separated from each other. Substantially equal to the distance between.
  • the electrodeposition power source 12 is a power source that applies at least a binary voltage to the bottom surface electrode 8 and the substrate connecting electrode 22. Further, the electrodeposition power source 12 may apply a voltage to the planar electrode U of the substrate C via the substrate connecting electrode 22 and the electrodeposition bath connecting electrode D. Therefore, the electrodeposition power source 12 may apply at least a binary voltage between the flat electrode U and the bottom electrode 8.
  • the substrate connection electrode 22 is also not particularly limited.
  • the electrode 22 for substrate connection is the electrodeposition bath connection electrode when the substrate C and the electrodeposition bath 4 are pressed against each other. It may be formed along one side of the upper surface of the edge portion 20 that overlaps with D.
  • FIG. 5 is a flowchart for explaining an example of a manufacturing method using the light emitting device manufacturing apparatus 2 according to the present embodiment.
  • FIG. 1 is a process cross-sectional view of a light emitting device manufacturing apparatus 2 and a substrate C in the manufacturing method shown in FIG.
  • step S2 is performed, for example, by placing the substrate C on the pressing unit 10 so that the planar electrode U of the substrate C faces the bottom electrode 8.
  • the inside 4A is filled with the electrodeposition liquid L1 before the substrate C installed in the pressurizing unit 10 is brought close to the electrodeposition tank 4 in step S2.
  • the electrodeposition liquid L1 contains a plurality of functional particles.
  • the functional particles contained in the electrodeposition liquid L1 are dispersed in the electrodeposition liquid L1 which is a solvent.
  • the electrodeposition liquid L1 include water, alkyl alcohol, toluene, propylene glycol monomethyl ether acetate (PGMEA), alkane, and the like.
  • the functional particles contained in the electrodeposition liquid L1 may be, for example, the material of the functional layer of the light emitting element.
  • the functional layer of the light emitting element include an electron transport layer, a light emitting layer, or a hole transport layer formed between electrodes of the light emitting element.
  • the functional particles when the functional particles are the material of the light emitting layer, the functional particles may be self-luminous particles.
  • the functional particles in the present embodiment may include inorganic nanoparticles, and particularly may include semiconductor nanoparticles, that is, quantum dots.
  • the functional particles in the present embodiment are the nanoparticle material of the light emitting layer
  • the functional particles may have a single core structure made of CdSe, ZnSe, InP or the like.
  • the functional particles in the present embodiment may have a core/shell structure composed of CdSe/ZnS, InP/ZnS, CdSe/CdS, ZnSe/ZnS, or the like.
  • the functional particles in the present embodiment may have a multi-shell structure composed of CdSe/ZnSe/ZnS or the like.
  • the functional particles in the present embodiment are the nanoparticle material of the electron transport layer, even if the functional particles include ZnO, ZrO, MgZnO, AlZnO, TiO 2 , Ta 2 O 3 , SrTiO 3 or the like. Good.
  • the functional particles in the present embodiment are the nanoparticle material of the hole transport layer, the functional particles may include NiO, CuI, Cu 2 O, CoO, Cr 2 O 3 or MoO 3. Good.
  • the electrodeposition liquid L1 includes, as functional particles, first particles M1 and second particles M2 which are particles different from each other as functional particles, as shown in (a) of FIG.
  • first particles M1 and the second particles M2 are materials for the light emitting layer
  • the first particles M1 and the second particles M2 may be self-luminous particles that emit different lights.
  • the functional particles contained in the electrodeposition liquid L1 may include a ligand that forms a coordinate bond with each of the functional particles.
  • the first particles M1 may have a structure in which the first ligand R1 is coordinated around, and the second particles M2 are It may have a structure in which a second ligand R2 different from the one ligand R1 is coordinated.
  • the ligand in the present embodiment include mercaptoalkanoic acid, alkanethiol, alkylamine, alkane, alkene, trioctylphosphine (TOP), trioctylphosphine oxide (TOPO), and the like.
  • step S4 the pressurizing unit 10 is controlled to press the substrate C against the electrodeposition tank 4 (step S4).
  • step S4 As shown in FIG. 1B, the surface of the substrate C on which the planar electrode U is formed and the upper surface of the edge portion 20 are in contact with each other.
  • the substrate gripping step of sandwiching the electrodeposition liquid L1 filled in the interior 4A between the substrate C and the bottom electrode 8 parallel to the substrate C is performed.
  • the inside 4A is filled with the electrodeposition liquid L1
  • the inside 4A is filled such that the liquid surface of the electrodeposition liquid L1 in the inside 4A is slightly higher than the upper surface of the edge portion 20 due to the surface tension. ..
  • the substrate C may be thinly formed only in the portion contacting the edge portion 20 in step S4.
  • the surface of the flat electrode U enters into the interior 4A more than the upper surface of the edge portion 20, so that the surface of the flat electrode U is more surely contacted. Be immersed in.
  • the electrodeposition tank connection electrode D formed on the substrate C and the upper surface of the edge portion 20.
  • the substrate connecting electrode 22 exposed from the abutment is brought into contact with and electrically connected.
  • step S4 the electrodeposition process is performed.
  • the first particles M1 and the second particles M2 have polarities by having a specific functional group. Therefore, in the electrodeposition step, the first particles M1 and the second particles M2 migrate in the electrodeposition liquid L1 by Coulomb interaction due to the electric field generated between the bottom electrode 8 and the flat electrode U. Further, the first particles M1 and the second particles M2 have the same polarity. In the present embodiment, in the electrodeposition step, the voltage applied to each electrode is controlled so that the first particles M1 and the second particles M2 migrate toward the flat electrode U.
  • each of the first particles M1 and the second particles M2 has a threshold voltage between the bottom electrode 8 and the plane electrode U, which is necessary for being adsorbed to the plane electrode U and forming a film on the plane electrode U.
  • Each is different.
  • the threshold voltage for each functional particle differs depending on the particle size of the functional particle, the type of ligand to be coordinated, or the number of coordinations to one functional particle.
  • the absolute value of the first threshold voltage V1 that is the threshold voltage for the first particles M1 is lower than the absolute value of the second threshold voltage V2 that is the threshold voltage for the second particles M2. That is, the first particles M1 are adsorbed to the flat electrode U to form a film under an electric field between the bottom electrode 8 and the flat electrode U, which are smaller than the second particles M2.
  • the first voltage whose absolute value is equal to or more than the absolute value of the first threshold voltage V1 and less than the absolute value of the second threshold voltage V2 is applied to the bottom electrode 8
  • the first film forming step of applying the voltage between the substrate and the flat electrode U is performed (step S6).
  • step S6 as shown in (c) of FIG. 1, among the functional particles contained in the electrodeposition liquid L1, only the first particles M1 migrate to the flat electrode U and are adsorbed on the flat electrode U.
  • step S6 By sufficiently applying the voltage in step S6, the first layer F1 including the first particles M1 shown in FIG. 1C is formed on the planar electrode U.
  • step S6 is performed until almost all of the first particles M1 in the electrodeposition tank 4 are adsorbed on the flat electrode U for forming the first layer F1.
  • step S6 a second film forming step of applying a second voltage whose absolute value is greater than or equal to the absolute value of the second threshold voltage V2 between the bottom electrode 8 and the flat electrode U (step) is performed. S8).
  • the second particles M2 also migrate to the flat electrode U and are adsorbed on the flat electrode U.
  • the second layer F2 including the second particles M2 shown in (d) of FIG. 1 is formed on the first layer F1.
  • the second layer F2 may contain a small amount of the first particles M1 as long as the density of the first particles M1 in the second layer F2 is lower than the standard of the defect as a final light emitting device. Therefore, in the present embodiment, a slight amount of the first particles M1 may be included in the electrodeposition tank 4 in step S8.
  • the present embodiment exemplifies a case where the functional material contained in the electrodeposition liquid L1 has a negative polarity. That is, a voltage of negative polarity is applied to the bottom electrode 8 and a voltage of positive polarity is applied to the plane electrode U. When the polarities of the functional material contained in the electrodeposition liquid L1 are reversed, the polarities of the voltages applied to the electrodes may be reversed.
  • step S10 the voltage application between the bottom electrode 8 and the flat electrode U is released (step S10), and the electrodeposition process is completed.
  • the substrate C is pulled up from the electrodeposition bath 4 (step S12).
  • Step S12 is executed by controlling the pressurizing unit 10 and separating the substrate C from the electrodeposition tank 4.
  • the substrate C is removed from the pressing unit 10 (step S14) to obtain the substrate C in which the first layer F1 and the second layer F2 are laminated on the flat electrode U from the lower layer.
  • the light emitting device may be manufactured by forming a counter substrate or the like on the upper layer of the second layer F2.
  • the tact time can be reduced even when a plurality of layers respectively containing different functional materials are formed.
  • the first substrate electrode which is an electrode that applies the first voltage to the bottom electrode 8
  • the second substrate electrode which is the electrode that applies the second voltage to the bottom electrode 8.
  • a plurality of layers respectively containing different functional materials can be formed on the same plane electrode U by being laminated.
  • the mixing of the first particles M1 and the second particles M2 of the electrodeposition liquid L1 is preferably performed in step S6, that is, immediately before the first film forming step.
  • step S6 that is, immediately before the first film forming step.
  • adsorption and desorption of ligands may occur between the first particles M1 and the second particles M2. This is because ligand movement occurs equilibrium between the first particles M1 and the second particles M2. Therefore, when a long time has passed since the first particles M1 and the second particles M2 were mixed, as shown in FIG. 6B, both the first particles M1 and the second particles M2 Both the first ligand R1 and the second ligand R2 may change to a coordinated state.
  • the above-mentioned equilibration of the ligand is less likely to occur. For this reason, the ligand composition of the first particles M1 and the second particles M2 in the electrodeposition liquid L1 is more clearly different, so that the characteristics of the first particles M1 and the second particles M2 can be more clearly different. .. Therefore, the absolute values of the first threshold voltage V1 and the second threshold voltage V2 can be made to differ more clearly, and as a result, the yield of film formation of each functional particle is improved.
  • the mixing of the first particles M1 and the second particles M2 may be performed, for example, together with the filling of the electrodeposition liquid L1 into the electrodeposition tank 4.
  • Electrodeposition in this specification includes an electrochemical film forming method for forming a thin film of a material in a solution by causing a potential difference between two electrodes in the solution.
  • Electrodeposition in the present specification includes, for example, methods such as electrodeposition method, electrodeposition coating method, electrophoretic deposition method, dielectrophoretic deposition method, micelle electrolysis method, electroplating method and electroforming method. Good. Even when any one of these methods is selected as the electrodeposition step described above, it is possible to manufacture a light emitting device that achieves the effects described above.
  • the voltage application in step S6 is, for example, as shown in the graph of FIG. 7A, between the bottom electrode 8 and the plane electrode U, always higher than or equal to the first threshold voltage and lower than the second threshold voltage V2. It may be realized by continuing to apply the first voltage.
  • step S6 is not limited to this, and the first voltage is applied between the bottom electrode 8 and the plane electrode U as shown in FIG. 7B.
  • the reverse voltage VR (eighth voltage) may be alternately applied. That is, step S6 is realized by alternately performing the forward voltage applying step of applying the first voltage and the reverse voltage applying step of applying the reverse voltage VR between the bottom electrode 8 and the flat electrode U. You may.
  • the reverse voltage VR has a polarity opposite to that of the first threshold voltage V1.
  • the absolute value of the reverse voltage VR is smaller than the first threshold voltage V1 as shown in FIG. 7B.
  • the period of the reverse voltage applying step of applying the reverse voltage VR is shorter than the period of the forward voltage applying step of applying the first voltage. May be.
  • step S6 as shown in the graph of FIG. 7A, when the first voltage is continuously applied between the bottom electrode 8 and the plane electrode U, the first particles M1 are always on the plane electrode side. It will continue to migrate. Further, although the second particles M2 are not adsorbed on the flat electrode U, they migrate in the direction of the flat electrode U, so that the density of the second particles M2 also increases on the flat electrode U side in the electrodeposition tank 4. ing.
  • the second particles M2 caught in the first particles M1 may be adsorbed by the flat electrode U so as to be held by the first particles M1. Therefore, in the above-mentioned case, as shown in the process sectional view of the manufacturing apparatus 2 for a light emitting device at the time of completion of step S6 shown in FIG. There is.
  • step S6 as shown in the graph of FIG. 7B, the forward voltage applying step and the reverse voltage applying step are alternately performed, so that the first particles M1 and the second particles M1
  • the particles M2 migrate toward the bottom electrode 8. Therefore, the first particles M1 and the second particles M2 repeat the migration to the bottom electrode 8 side and the migration to the flat electrode U side. Since the first voltage is applied in the forward voltage applying step, the first particles M1 gradually approach the flat electrode U while repeating the migration to the bottom electrode 8 side and the migration to the flat electrode U side. Finally, it is adsorbed on the flat electrode U.
  • the second electrode M2 Since the first particles and the second particles repeat the migration to the bottom electrode 8 side and the migration to the flat electrode U side, the second electrode M2 is held by the first particle M1 so that the flat electrode is held. The possibility of being adsorbed by U is reduced. Therefore, it is possible to reduce the occurrence of a film formation defect in which the second particles M2 are contained in the first layer F1. Since the absolute value of the reverse voltage VR is smaller than the absolute value of the first voltage V1, it is possible to reduce the adsorption of the first particles M1 to the bottom surface electrode 8.
  • the method of alternately performing the forward voltage applying step and the reverse voltage applying step is not limited to the method of alternately applying the first voltage and the reverse voltage VR as shown in the graph of FIG. 7B. Absent.
  • the voltage may be applied so that the voltage between the bottom electrode 8 and the plane electrode U draws a sine wave with the elapsed time as the horizontal axis.
  • the maximum value of the sine wave may be the first voltage and the minimum value may be the reverse voltage VR.
  • the above-mentioned effects can be obtained similarly.
  • the voltage between the bottom surface electrode 8 and the plane electrode U may draw a pseudo sine wave or a triangular wave with the elapsed time as the horizontal axis.
  • FIG. 9 is a schematic perspective view of the substrate C according to this embodiment.
  • the substrate C shown in FIG. 9 differs from the substrate C shown in FIG. 1 only in that it includes a plurality of pixel electrodes E instead of the planar electrodes U and a plurality of electrodeposition bath connection electrodes D.
  • the pixel electrode E is patterned on the substrate C so as to be exposed on either surface of the substrate C.
  • the pixel electrodes E are formed in a matrix on the substrate C.
  • a plurality of electrodeposition bath connection electrodes D are formed on the surface of the substrate C on which the pixel electrodes E are formed, along any two sides of the substrate C orthogonal to each other.
  • a voltage can be applied to each pixel electrode E by applying a voltage to each electrodeposition bath connecting electrode D.
  • a plurality of transistors (not shown) connected to each pixel electrode E may be formed on the substrate C, and each transistor is driven by applying a voltage to each electrodeposition tank connection electrode D.
  • a voltage may be applied to each pixel electrode E.
  • the pixel electrode E and the electrodeposition bath connection electrode D are flush with the surface of the substrate C on which the pixel electrode E and the electrodeposition bath connection electrode D are formed, and are exposed on the surface.
  • electrodeposition on the substrate C is performed using the light emitting device manufacturing apparatus 2.
  • the light emitting device manufacturing apparatus 2 in the present embodiment may have the same configuration as the light emitting device manufacturing apparatus 2 in the previous embodiment.
  • 10A and 10 are schematic diagrams corresponding to FIGS. 3A and 3C in a state where the substrate C and the electrodeposition tank 4 are pressed against each other in the present embodiment. (B) of each.
  • the electrodeposition power source 12 can individually apply a voltage to each of the pixel electrodes E on the substrate C via the substrate connection electrode 22 and the electrodeposition bath connection electrode D. Therefore, the electrodeposition power source 12 applies at least a binary voltage between each pixel electrode E and the bottom electrode 8.
  • FIG. 11 is a flowchart for explaining an example of a manufacturing method using the light emitting device manufacturing apparatus 2 according to the present embodiment.
  • FIG. 12 is a process cross-sectional view of the light emitting device manufacturing apparatus 2 and the substrate C in the manufacturing method shown in FIG. 12 is an enlarged side view of the vicinity of the electrodeposition tank 4 in the electrodeposition process of this embodiment.
  • the substrate C includes, as pixel electrodes E, a plurality of first pixel electrodes E1, second pixel electrodes E2, and third pixel electrodes E3, as shown in the drawings of FIG. There is.
  • a method of forming layers made of functional particles different from each other on each of the first pixel electrode E1, the second pixel electrode E2, and the third pixel electrode E3 will be described.
  • step S2 the substrate C is installed in the light emitting device manufacturing apparatus 2 (step S2).
  • step S2 is executed as in the previous embodiment.
  • the inside 4A is filled with the electrodeposition liquid L2 different from the electrodeposition liquid L1.
  • the electrodeposition liquid L2 may contain the same solvent as the solvent of the electrodeposition liquid L1.
  • the electrodeposition liquid L2 contains, as functional particles, third particles M3 in addition to the first particles M1 and the second particles M2 described in the previous embodiment. Similar to the first particles M1 and the second particles M2, the third particles M3 may be the material of the functional layer of the light emitting element, or may be semiconductor nanoparticles, that is, quantum dots.
  • the third particles M3 have the same polarity as the first particles M1 and the second particles M2.
  • the bottom electrode 8 and the pixel electrode E which are necessary for the first particles M1 and the second particles M2 to be adsorbed on any of the pixel electrodes E and to be deposited on the pixel electrodes E
  • the first threshold voltage V1 and the second threshold voltage V2 are respectively provided as the threshold voltages between the two.
  • the absolute value of the third threshold voltage V3, which is the threshold voltage required for the third particles M3 to be adsorbed on any of the pixel electrodes E and to be formed on the pixel electrodes E is the second threshold voltage. Greater than the absolute value of V2.
  • step S4 the pressurizing unit 10 is controlled to press the substrate C against the electrodeposition tank 4, and the substrate holding step is performed (step S4).
  • the pixel electrode E on the substrate C is immersed in the electrodeposition liquid L2.
  • an electrodeposition step is performed.
  • the first voltage whose absolute value is equal to or more than the absolute value of the first threshold voltage V1 and less than the absolute value of the second threshold voltage V2 is applied to the bottom electrode 8
  • a first pixel electrode E1 is applied between the first film forming step (step S16).
  • step S16 as shown in (a) of FIG. 12, among the functional particles contained in the electrodeposition liquid L2, only the first particles M1 migrate to the first pixel electrode E1, and the first particles M1 are deposited on the first pixel electrode E1. Adsorbed.
  • step S16 By sufficiently applying the voltage in step S16, the first layer F1 including the first particles M1 shown in FIG. 12B is formed on the first pixel electrode E1. Note that step S16 is performed until almost all of the first particles M1 in the electrodeposition tank 4 are adsorbed on the first pixel electrode E1 for forming the first layer F1.
  • FIGS. 13A and 13B are process cross-sectional views for explaining the electrodeposition process using the light emitting device manufacturing apparatus 2 according to the present embodiment.
  • 13C and 13D are process cross-sectional views for explaining an electrodeposition process using the light emitting device manufacturing apparatus according to the comparative embodiment.
  • the light emitting device manufacturing apparatus is related to the present embodiment, except that, instead of the electrodeposition tank 4, it is provided with an electrodeposition tank 4C having a distance d2 larger than the distance d1 as a depth.
  • the light emitting device manufacturing apparatus 2 has the same configuration.
  • the voltage applied to the first pixel electrode E1B of the first pixel electrodes E1 is lower than the desired voltage with respect to the first pixel electrode E1A.
  • the electric field generated between the bottom electrode 8 and the first pixel electrode E1B is weaker than the electric field generated between the bottom electrode 8 and the first pixel electrode E1A.
  • the first layer F1 formed on each of the first pixel electrode E1A and the first pixel electrode E1B is referred to as a first layer F1A and a first layer F1B, respectively.
  • the film formation rate of the first layer F1B becomes slower than the film formation rate of the first layer F1A.
  • the first particles M1 existing in the vicinity of a specific pixel electrode E decrease due to the film formation of the first layer F1, and the film formation rate of the first particles M1 on the pixel electrode E rapidly decreases. ..
  • the film forming rate of the first layer F1A is relatively high, the first particles M1 near the first pixel electrode E1A are consumed relatively quickly.
  • the electrodeposition tank 4 having the depth of the relatively short distance d1 as in the present embodiment the total amount of the first particles M1 in the electrodeposition tank 4 is relatively small. Therefore, in the film forming step, the first particles M1 in the vicinity of the first pixel electrode E1A rapidly decrease, and therefore, after the first layer F1A is continuously formed for a while, the film forming rate of the first layer F1A is Falls rapidly.
  • the film formation rate of the first layer F1B is relatively slow, the first particles M1 still remain in the vicinity of the first pixel electrode E1B even when the film formation rate of the first layer F1A rapidly decreases. ing. For this reason, as time further elapses, the film formation of the first layer F1B continues even after the film formation of the first layer F1A is substantially stopped. The film formation of the first layer F1B continues until the amount of the first particles M1 near the first pixel electrode E1B decreases.
  • the total amount of the first particles M1 near each pixel electrode is substantially the same. That is, when the film formation takes a sufficient time, the amounts of the first particles M1 contained in the first layer F1A and the first layer F1B become substantially the same. Therefore, as shown in FIG. 13B, when the film thicknesses of the first layer F1A and the first layer F1B are set to the film thickness dF1 and the film thickness dF2, respectively, the film thickness dF1 and the film thickness dF2 are substantially the same. The film thickness is the same.
  • the light emitting device manufacturing apparatus 2 forms a film on each pixel electrode E even when a voltage drop occurs in a specific pixel electrode E when a voltage is applied to each pixel electrode E.
  • the difference in film thickness between the formed layers can be reduced.
  • the total amount of the first particles M1 in the electrodeposition tank 4C becomes relatively large. Therefore, even after the first layer F1A has been formed for a while, a relatively large number of first particles M1 near the first pixel electrode E1A remain. Therefore, the film formation rate of the first layer F1A does not decrease for a relatively long time, and the film formation of the first layer F1A is continuously performed. Therefore, in the comparative embodiment, film formation is continued not only on the first pixel electrode E1B but also on the first pixel electrode E1A while the voltage is being applied.
  • the film thickness of the first layer F1A is larger than that of the first layer F1B due to the rapid film formation of the first layer F1A having a higher film formation rate than that of the first layer F1B.
  • the film thickness dFA is larger than the film thickness dFB.
  • the film thickness of the first layer F1B is the target film thickness of the first layer F1B. It becomes thinner than the thickness.
  • the distance d1 corresponding to the depth of the electrodeposition tank 4 is appropriately designed, and when the first particles M1 are all consumed, the target film thickness of the first layer F1 is set. It may be designed to have a film thickness. As a result, after the completion of the first film forming step, almost all of the first particles M1 in the electrodeposition liquid L2 are consumed, so that the above-mentioned film thickness difference can be reduced.
  • step S16 a second voltage whose absolute value is greater than or equal to the absolute value of the second threshold voltage V2 and less than the absolute value of the third threshold voltage V3 is applied to the bottom electrode 8 and the second pixel electrode E2.
  • the second film forming process is applied during this period (step S18).
  • step S18 as shown in FIG. 12C, of the second particles M2 and the third particles M3, only the second particles M2 migrate to the second pixel electrode E2, and then on the second pixel electrode E2. Adsorbed.
  • the second layer F2 including the second particles M2 shown in FIG. 12D is formed on the second pixel electrode E2.
  • the second layer F2 may contain a small amount of the first particles M1 as long as the density of the first particles M1 in the second layer F2 is lower than the standard of the defect as a final light emitting device. Therefore, in the present embodiment, a slight amount of the first particles M1 may be included in the electrodeposition tank 4 in step S18.
  • a third film forming step of applying a third voltage whose absolute value is equal to or more than the absolute value of the third threshold voltage V3 between the bottom electrode 8 and the third pixel electrode E3 is performed.
  • Step S20 a third film forming step of applying a third voltage whose absolute value is equal to or more than the absolute value of the third threshold voltage V3 between the bottom electrode 8 and the third pixel electrode E3 is performed.
  • the third particles M3 migrate to the third pixel electrode E3 and are adsorbed on the third pixel electrode E3.
  • the third layer F3 including the third particles M3 shown in FIG. 12F is formed on the third pixel electrode E3.
  • step S16 and step S18 the first particles M1 and the second particles M2 in the electrodeposition tank 4 are almost completely consumed. Therefore, in step S20, the first particles M1 or the second particles M2 are contained in the third layer F3. Can be reduced.
  • a small amount of the first particles M1 or the second particles M1 in the third layer F3 or Two particles M2 may be included. Therefore, in the present embodiment, a slight amount of the first particles M1 or the second particles M2 may be included in the electrodeposition tank 4 in step S20.
  • step S22 the voltage application between the bottom electrode 8 and the pixel electrode E is released (step S22), and the electrodeposition process is completed.
  • step S12 and step S14 described above are performed in the same manner as in the previous embodiment.
  • a substrate C including the first layer F1, the second layer F2, and the third layer F3 on the first pixel electrode E1, the second pixel electrode E2, and the third pixel electrode E3 is obtained.
  • a light emitting device may be manufactured by forming a counter substrate or the like on the first layer F1, the second layer F2, and the third layer F3.
  • the first substrate electrode which is the electrode that applies the first voltage to the bottom electrode 8
  • a certain second substrate electrode is the second pixel electrode E2. That is, the first substrate electrode and the second substrate electrode are different from each other.
  • the first layer F1 containing the first particles M1 is formed on the first pixel electrode E1
  • the second layer F2 containing the second particles M2 is formed on the second pixel electrode E2, respectively. it can.
  • the third substrate electrode that is an electrode that applies the third voltage between the bottom electrode 8 and the bottom electrode 8 is the third pixel electrode E3 that is different from the first pixel electrode E1 and the second pixel electrode E2. .. Therefore, in the present embodiment, the third layer F3 containing the third particles M3 can be separately formed on the third pixel electrode E3 independently of the first layer F1 and the second layer F2.
  • the first particles M1, the second particles M2, and the third particles M3 may be quantum dots that emit blue light, green light, and red light, respectively.
  • a light emitting device including a light emitting element that emits blue light, green light, and red light in each of the plurality of sub-pixels.
  • this configuration is preferable in the following points because the quantum dots emitting blue light, the quantum dots emitting green light, and the quantum dots emitting red light are electrodeposited on the pixel electrode E in this order.
  • the wavelength of light emitted by a quantum dot becomes longer as the diameter of the quantum dot becomes smaller. Furthermore, the smaller the quantum dot diameter, the more likely the quantum dot is to aggregate. Therefore, the quantum dots that emit blue light tend to aggregate more easily than the quantum dots that emit green light and red light, respectively. Furthermore, under the electric field of the same strength, particles that are more likely to aggregate are more likely to be adsorbed on the electrode by electrodeposition.
  • the quantum dots that emit blue light tend to have a lower threshold voltage as compared with the quantum dots that emit green light and red light, respectively, because adsorption to the electrode by electrodeposition occurs.
  • a quantum dot that emits green light tends to have a lower threshold voltage required for adsorption to an electrode due to electrodeposition, as compared with a quantum dot that emits red light.
  • the present embodiment it is preferable to electrodeposit the quantum dots emitting blue light before the quantum dots emitting green light and red light respectively. With this configuration, it is possible to more efficiently reduce mixing of the quantum dots emitting blue light into a layer including other quantum dots in a step subsequent to the step of electrodepositing the quantum dots emitting blue light.
  • the quantum dots that emit green light be electrodeposited before the quantum dots that emit red light.
  • the shorter the wavelength of light emitted by a quantum dot the greater the voltage required to cause the quantum dot to emit light. Therefore, as compared with the admissible amount of quantum dots having a shorter emission wavelength in a pixel having a longer emission wavelength, the admissible amount of quantum dots having a longer emission wavelength is smaller in a pixel having a shorter emission wavelength.
  • the main quantum dots that are unintentionally electrodeposited in a certain electrodeposition process are not consumed in the electrodeposition process before the electrodeposition process and are not consumed in the electrodeposition tank 4. It is the quantum dot that remained in.
  • the main quantum dots that are unintentionally mixed in a certain electrodeposition process are the quantum dots to be electrodeposited.
  • the quantum dots emit light of a wavelength shorter than the wavelength of the emitted light. Therefore, in the present embodiment, the quantum dots that emit blue light, green light, and red light, respectively, are electrodeposited in this order, and the mixing amount of the quantum dots that are unintentionally electrodeposited is an allowable amount. Can be reduced more efficiently.
  • FIG. 14 is a flowchart for explaining an example of a manufacturing method using the light emitting device manufacturing apparatus 2 according to the present embodiment.
  • FIG. 15 is a process cross-sectional view of the light emitting device manufacturing apparatus 2 and the substrate C in the manufacturing method shown in FIG. In each figure of FIG. 15, an enlarged side view of the vicinity of the electrodeposition tank 4 in the electrodeposition step of the present embodiment is shown. An example of performing film formation by electrodeposition on the pixel electrode E of the substrate C using the light emitting device manufacturing apparatus 2 according to this embodiment will be described with reference to FIGS. 14 and 15.
  • the light emitting device manufacturing apparatus 2 and the substrate C in the present embodiment have the same configurations as the light emitting device manufacturing apparatus 2 and the substrate C in the previous embodiment, respectively.
  • the substrate C is installed in the light emitting device manufacturing apparatus 2 (step S2).
  • Step S2 is executed as in the previous embodiment.
  • the electrodeposition liquid L1 and the electrodeposition liquid L2 different from the electrodeposition liquid L1 are provided in the interior 4A. It is filled with L3.
  • the electrodeposition liquid L3 may contain the same solvent as the solvent of the electrodeposition liquid L1 and the electrodeposition liquid L2.
  • the electrodeposition liquid L3 contains, as functional particles, fourth particles M4 and fifth particles M5 in addition to the first particles M1, the second particles M2, and the third particles M3 described in the above embodiment.
  • the fourth particles M4 and the fifth particles M5 may be the material of the functional layer of the light emitting device, like the first particles M1, the second particles M2, and the third particles M3. It may be a dot.
  • the fourth particles M4 and the fifth particles M5 have the same polarity as the first particles M1, the second particles M2, and the third particles M3.
  • the first particles M1, the second particles M2, and the third particles M3 are the first threshold voltage V1 and the second threshold voltage, respectively, as the threshold voltages between the bottom electrode 8 and the pixel electrode E. V2 and a third threshold voltage V3.
  • the absolute value of the fourth threshold voltage V4 which is the threshold voltage required for the fourth particles M4 to be adsorbed on any of the pixel electrodes E and to be formed on the pixel electrodes E, is the first threshold voltage. It is smaller than the absolute value of V1.
  • the absolute value of the fifth threshold voltage V5 which is the threshold voltage required for the fifth particles M5 to be adsorbed on any of the pixel electrodes E and to be formed on the pixel electrodes E, is the third threshold. It is larger than the absolute value of the voltage V3.
  • step S4 the pressurizing unit 10 is controlled to press the substrate C against the electrodeposition tank 4, and the substrate holding step is performed (step S4).
  • the pixel electrode E on the substrate C is immersed in the electrodeposition liquid L3.
  • an electrodeposition step is performed.
  • a fourth voltage whose absolute value is equal to or more than the absolute value of the fourth threshold voltage V4 and less than the absolute value of the first threshold voltage V1 is applied to the bottom electrode 8
  • a fourth film forming step of applying the voltage between all the pixel electrodes E step S24.
  • step S24 as shown in FIG. 15A, among the functional particles contained in the electrodeposition liquid L3, only the fourth particles M4 migrate to each of the pixel electrodes E and are adsorbed on the pixel electrodes E.
  • step S24 By sufficiently applying the voltage in step S24, the fourth layer F4 including the fourth particles M4 shown in FIG. 15B is formed on all the pixel electrodes E. Note that step S24 is performed until almost all of the fourth particles M4 in the electrodeposition tank 4 are adsorbed on the pixel electrode E for forming the fourth layer F4.
  • step S16, step S18, and step S20 are executed by the same method as in the previous embodiment.
  • FIG. 15C shows a state in which the first voltage is applied between the first pixel electrode E1 and the bottom electrode 8 in step S16.
  • the fourth layer F4 at the position overlapping the first pixel electrode E1 adsorbs the first particles M1.
  • the first layer F1, the second layer F2, and the third layer F3 are formed. Is obtained.
  • the first layer F1 is formed on the fourth layer F4 at a position overlapping with the first pixel electrode E1.
  • the second layer F2 is formed on the fourth layer F4 at a position overlapping with the second pixel electrode E2.
  • the third layer F3 is formed on the fourth layer F4 at a position overlapping with the third pixel electrode E3.
  • step S24 almost all of the first particles M1 in the electrodeposition tank 4 are consumed, so in step S16, step S18, and step S20, respectively, in the first layer F1, the second layer F2, and the second layer F2.
  • Mixing of the fourth particles M4 in the three-layer F3 can be reduced.
  • a minute amount of the fourth particles M4 may be included in the second layer F2 or the third layer F3. Therefore, in the present embodiment, a small amount of the fourth particles M4 may be included in the electrodeposition tank 4 in each of step S16, step S18, and step S20.
  • step S20 a fifth film forming step of applying a fifth voltage whose absolute value is equal to or more than the absolute value of the fifth threshold voltage V5 between the bottom electrode 8 and all the pixel electrodes E is performed.
  • Step S26 a fifth film forming step of applying a fifth voltage whose absolute value is equal to or more than the absolute value of the fifth threshold voltage V5 between the bottom electrode 8 and all the pixel electrodes E is performed.
  • the fifth particles M5 migrate to and are adsorbed on each of the first layer F1, the second layer F2, and the third layer F3.
  • the fifth layer M5 shown in (f) of FIG. 15 is formed on each of the first layer F1, the second layer F2, and the third layer F3.
  • the layer F5 is deposited.
  • step S26 Before step S26, almost all the functional particles other than the fifth particles M5 in the electrodeposition tank 4 are consumed, so that the functional particles other than the fifth particles M5 are mixed in the fifth layer F5 in step S26. Can be reduced.
  • the functional particles excluding the fifth particles M5 in the fifth layer F5 is lower than the standard of the defect as a final light emitting device, the functional particles excluding the fifth particles M5 are included in the fifth layer F5. , May be contained in a very small amount. Therefore, in the present embodiment, a small amount of functional particles other than the fifth particles M5 may be included in the electrodeposition tank 4 in step S26.
  • step S22 the voltage application between the bottom electrode 8 and the pixel electrode E is released (step S22), and the electrodeposition process is completed.
  • step S12 and step S14 described above are performed in the same manner as in the previous embodiment.
  • the substrate C is obtained by stacking the fourth layer F4, the first layer F1, the second layer F2, the third layer F3, and the fifth layer F5 on the pixel electrode E in this order. ..
  • FIG. 16 is a sectional side view of the light emitting device LD according to the present embodiment.
  • the light emitting device LD shown in FIG. 16A is obtained by forming the counter substrate CC on the fifth layer F5 of the substrate C described above.
  • the counter substrate CC has a single common electrode CE as a substrate electrode.
  • the common electrode CE is formed on the counter substrate CC so as to be exposed on one surface of the counter substrate CC.
  • the counter substrate CC and the common electrode CE face each other via the fourth layer F4 to the fifth layer F5 of the substrate C.
  • the common electrode CE overlaps all the pixel electrodes E on the substrate C and is in contact with all the fifth layers F5.
  • the configuration of the light emitting device LD shown in each drawing of FIG. 16 is an example in this embodiment.
  • the common electrode CE may be directly provided on the upper layer of the layer electrodeposited on the substrate C (for example, the upper layer of the fifth layer).
  • the common electrode CE and the sealing glass held with a space between the common electrode CE and the common electrode CE are electrodeposited on the substrate C. It may be provided on the upper layer of the layer.
  • the first layer F1, the second layer F2, and the third layer F3 may be a blue light emitting layer, a green light emitting layer, and a red light emitting layer, respectively.
  • each of the fourth layer F4 and the fifth layer F5 may be a hole transport layer or an electron transport layer.
  • the blue light emitting element is arranged at a position overlapping with the first layer F1
  • the green light emitting element is arranged at a position overlapping with the second layer F2
  • the third layer is formed.
  • the light emitting device may include a red light emitting element at a position overlapping with F3.
  • the light emitting device LD may function as a display device by providing the blue light emitting element in the blue sub pixel, the green light emitting element in the green sub pixel, and the red light emitting element in the red sub pixel.
  • Either one of the substrate C and the counter substrate CC may be a transparent substrate provided with a transparent electrode.
  • the light emitting device LD may take out the light from each light emitting element from the transparent substrate side.
  • the light emission of each light emitting element may be realized by driving each pixel electrode E.
  • the electrodeposition tank connection electrode D may function as a terminal for inputting a signal for driving each pixel electrode E.
  • each of the first layer F1, the second layer F2, and the third layer F3 has a first particle M1, a second particle M2, And it is preferable that it consists of only the third particles M3.
  • the first particles M1 are formed in the second layer F2 and the first particles M1 are formed in the third layer F3.
  • the second particles M2 may be contained in a small amount.
  • the first particles M1 in the second layer F2 tend to be formed on the pixel electrode E side in the second layer F2, as shown in (b) of FIG. This is because immediately before the second film forming step, the remaining first particles M1 have already migrated to the pixel electrode E side in the electrodeposition tank 4, so that in the subsequent second film forming step, This is because one particle M1 tends to be preferentially adsorbed. For the same reason, the first particles M1 and the second particles M2 in the third layer F3 tend to be formed on the pixel electrode E side in the third layer F3, as shown in (b) of FIG. ..
  • the light emission of the light emitting device is near the interface of the light emitting layer on the hole transporting layer side. Tend to occur in. This is because when the light emitting layer is composed of quantum dots, the mobility of holes in the light emitting layer is lower than the mobility of electrons in the light emitting layer.
  • the pixel electrode E of the substrate C is the cathode of the light emitting element described above, and the common electrode CE of the counter substrate CC is the anode of the light emitting element described above.
  • the fourth layer F4 function as an electron transport layer and the fifth layer F5 function as a hole transport layer.
  • the first particles M1 in the second layer F2 and the first particles M1 and the second particles M2 in the third layer F3 are on the fourth layer F4 of each layer, that is, on the electron transport layer side. It is easily formed. Therefore, even when each light emitting element of the light emitting device LD is driven, the first particles M1 in the second layer F2 and the first particles M1 and the second particles M2 in the third layer F3 emit light. Hard to do. Therefore, so-called color mixing, in which different light is emitted from the light emitting element that emits light of a specific color, is reduced, and display quality is improved.
  • FIG. 17 is a process cross-sectional view of the light-emitting device manufacturing apparatus 2 and the substrate C for explaining an example of the manufacturing method using the light-emitting device manufacturing apparatus 2 according to the present embodiment. 17 is an enlarged side view of the vicinity of the electrodeposition tank 4 in the electrodeposition process of this embodiment.
  • the light emitting device manufacturing apparatus 2 and the substrate C in the present embodiment have the same configurations as the light emitting device manufacturing apparatus 2 and the substrate C in the previous embodiment, respectively.
  • the method for manufacturing the light emitting device according to the present embodiment can be realized by the same method as the method for manufacturing the light emitting device according to the previous embodiment, except for steps S24 and S26 in each step of the flowchart shown in FIG. ..
  • An example of performing film formation by electrodeposition on the pixel electrodes E of the substrate C using the light emitting device manufacturing apparatus 2 according to this embodiment will be described with reference to FIGS. 14 and 17.
  • step S2 the substrate C is installed in the light emitting device manufacturing apparatus 2 (step S2).
  • step S2 is executed as in the previous embodiment.
  • the electrodeposition solution L1, the electrodeposition solution L2, and the electrodeposition solution L2 are placed in the interior 4A.
  • An electrodeposition liquid L4 different from L3 is filled.
  • the electrodeposition liquid L4 may contain the same solvent as the solvent of the electrodeposition liquid L1, the electrodeposition liquid L2, and the electrodeposition liquid L3.
  • the electrodeposition liquid L4 contains, as functional particles, the first particles M1, the second particles M2, and the third particles M3 described in the previous embodiment.
  • the electrodeposition liquid L4 includes fourth particles M4A, fourth particles M4B, and fourth particles M4C instead of the fourth particles M4, and instead of the fifth particles M5, as compared with the electrodeposition liquid L3. , Fifth particles M5A, fifth particles M5B, and fifth particles M5C.
  • the fourth particles M4A, the fourth particles M4B, the fourth particles M4C, the fifth particles M5A, the fifth particles M5B, and the fifth particles M5C may have the same configuration as the functional particles up to the previous embodiment, In particular, they have the same polarity.
  • the absolute values of the threshold voltages of the fourth particles M4A, the fourth particles M4B, and the fourth particles M4C are smaller than the absolute values of the threshold voltages of the first particles M1 and are different from each other.
  • the absolute values of the threshold voltages of the fifth particles M5A, the fifth particles M5B, and the fifth particles M5C are larger than the absolute values of the threshold voltages of the third particles M3, and are different from each other.
  • the absolute value of the threshold voltage of the fourth particles M4B is larger than the absolute value of the threshold voltage of the fourth particles M4A and smaller than the absolute value of the threshold voltage of the fourth particles M4C.
  • the absolute value of the threshold voltage of the fifth particles M5B is larger than the absolute value of the threshold voltage of the fifth particles M5A and smaller than the absolute value of the threshold voltage of the fifth particles M5C.
  • step S4 the pressurizing unit 10 is controlled to press the substrate C against the electrodeposition tank 4, and the substrate holding step is performed (step S4).
  • the pixel electrode E on the substrate C is immersed in the electrodeposition liquid L3.
  • an electrodeposition step is performed.
  • step S24 first, a voltage whose absolute value is larger than the absolute value of the threshold voltage of the fourth particles M4A and smaller than the absolute value of the threshold voltage of the fourth particles M4B is set as the bottom electrode 8.
  • the voltage is applied to the first pixel electrode E1.
  • FIG. 17A only the fourth particles M4A migrate to each of the first pixel electrodes E1 and are adsorbed on the first pixel electrodes E1.
  • the fourth layer F4A containing the fourth particles M4A shown in FIG. 17B is formed on the first pixel electrode E1.
  • the voltage application is performed until almost all of the fourth particles M4A in the electrodeposition tank 4 are adsorbed on the pixel electrode E for forming the fourth layer F4A.
  • the absolute values of the threshold voltages of the fourth particles M4A, the fourth particles M4B, and the fourth particles M4C are different from each other. Therefore, as described above, the fourth layer F4A can be formed by adsorbing only the fourth particles M4A only on the first pixel electrode E1.
  • the fourth layer F4B containing the fourth particles M4B can be formed on the second pixel electrode E2 as shown in (c) of FIG. Further, by applying the same method to the fourth particles M4C, as shown in FIG. 17C, the fourth layer F4C including the fourth particles M4C is separately formed on the third pixel electrode E3. can do. As a result, the fourth layer F4 including the fourth layer F4A, the fourth layer F4B, and the fourth layer F4C shown in (c) of FIG. 17 is provided on different pixel electrodes E, respectively.
  • Step S16, Step S18, and Step S20 are carried out in the same manner as in the previous embodiment to form the first layer F1, the second layer F2, and the third layer F3 shown in FIG. 17D. ..
  • the first layer F1 is placed on the fourth layer F4A
  • the second layer F2 is placed on the fourth layer F4B
  • the third layer F3 is placed on the fourth layer F4B.
  • a film is formed on the four-layer F4C.
  • step S26 first, a voltage whose absolute value is larger than the absolute value of the threshold voltage of the fifth particles M5A and smaller than the absolute value of the threshold voltage of the fifth particles M5B is set to the bottom surface.
  • the voltage is applied between the electrode 8 and the first pixel electrode E1.
  • the fifth layer F5A including the fifth particles M5A shown in (f) of FIG. 17 is formed on the first layer F1.
  • the voltage application is performed until almost all of the fifth particles M5A in the electrodeposition tank 4 are adsorbed on the pixel electrode E for forming the fifth layer F5A.
  • the absolute values of the threshold voltages of the fifth particles M5A, the fifth particles M5B, and the fifth particles M5C are different from each other. Therefore, as described above, the fifth layer F5A can be formed by adsorbing only the fifth particles M5A only on the first layer F1.
  • the fifth layer F5B including the fifth particles M5B can be formed in the second layer F2 as shown in (f) of FIG. Further, by applying the same method to the fifth particles M5C, as shown in (f) of FIG. 17, the fifth layer F5C including the fifth particles M5C is separately formed on the third layer F3. be able to.
  • the fifth layer F5A, the fifth layer F5B, and the fifth layer F5C shown in (f) of FIG. 17 are provided on the first layer F1, the second layer F2, and the third layer F3, respectively.
  • the fifth layer F5 is obtained.
  • step S22, step S12, and step S14 are performed in the same manner as in the previous embodiment.
  • the substrates C individually formed at the positions overlapping the pixel electrodes E are also formed for the fourth layer F4 and the fifth layer F5. can get.
  • FIG. 18 is a sectional side view of the light emitting device LD according to this embodiment.
  • the light emitting device LD shown in FIG. 18 is obtained by forming the counter substrate CC on the fifth layer F5 of the substrate C described above.
  • the counter substrate CC has the same configuration as the counter substrate CC in the previous embodiment.
  • the light emitting device LD in the present embodiment is individually formed for each pixel electrode E in the fourth layer F4 and the fifth layer F5 as compared with the light emitting device LD in the previous embodiment. Therefore, the functional particles contained in the fourth layer F4 with which the first layer F1, the second layer F2, and the third layer F3 are in contact are different from each other. Similarly, the functional particles contained in the fifth layer F5 with which the first layer F1, the second layer F2, and the third layer F3 are in contact are different from each other.
  • the fourth layer F4 and the fifth layer F5 suitable for the first layer F1, the second layer F2, and the third layer F3 can be individually formed.
  • the first layer F1, the second layer F2, and the third layer F3 of the light emitting device LD according to the present embodiment are light emitting layers that emit light of different colors, respectively, a hole transport layer suitable for the respective light emitting layers and The electron transport layer may be different for each color emitted.
  • the fourth layer F4 is an electron transport layer and the fifth layer F5 is a hole transport layer
  • an appropriate electron transport layer and hole transport layer are separately formed for each color to be emitted. be able to. Therefore, according to the manufacturing method of the present embodiment, it is possible to provide the light emitting device LD including the light emitting element with further improved light emitting efficiency.
  • the sixth voltage may be applied between the bottom electrode 8 and the second pixel electrode E2 and the third pixel electrode E3 that do not adsorb the first particles M1. Good.
  • the absolute value of the sixth voltage is smaller than the absolute value of the first voltage.
  • the first particles M1 migrate toward the first pixel electrode E1 also by the electric field generated between the second pixel electrode E2 and the third pixel electrode E3 and the first pixel electrode E1. Therefore, the film formation rate of the first layer F1 on the first pixel electrode E1 is improved. Since the absolute value of the sixth voltage is smaller than the absolute value of the first voltage, adsorption of the first particles M1 by the second pixel electrode E2 or the third pixel electrode E3 is reduced.
  • the sixth voltage may have a polarity opposite to that of the first voltage.
  • the seventh voltage is applied between the bottom electrode 8 and the first pixel electrode E1 and the third pixel electrode E3 that do not adsorb the second particles M2. Good.
  • the absolute value of the seventh voltage is smaller than the absolute value of the second voltage.
  • the second particles M2 migrate toward the second pixel electrode E2 also by the electric field generated between the first pixel electrode E1 and the third pixel electrode E3 and the second pixel electrode E2. Therefore, the film formation rate of the second layer F2 on the second pixel electrode E2 is improved. Since the absolute value of the seventh voltage is smaller than the absolute value of the second voltage, the adsorption of the second particles M2 by the first pixel electrode E1 or the third pixel electrode E3 is reduced.
  • the seventh voltage may have a polarity opposite to that of the second voltage.

Abstract

This method for manufacturing a light-emitting device performs electrodeposition of functional particles (M1• M2) on a substrate electrode (U) formed on a substrate (C) and is provided with a first film forming step and a second film forming step next to the first film forming step. In the first film forming step, a first voltage is applied between a first substrate electrode in the substrate electrode and a facing electrode (8) to form a film of a first particle (M1) on the first substrate electrode. In the second film forming step, a second voltage is applied between a second substrate electrode in the substrate electrode and the facing electrode to form a film of a second particle (M2) on the second substrate electrode. The absolute value of the first voltage is smaller than the absolute value of the second voltage.

Description

発光デバイスの製造方法Method for manufacturing light emitting device
　本発明は、発光デバイスの機能層を電着により形成する、発光デバイスの製造方法に関する。 The present invention relates to a method for manufacturing a light emitting device, in which a functional layer of the light emitting device is formed by electrodeposition.
　特許文献１には、有機発光素子の製造において、有機発光層を電着法によって形成する方法が開示されている。 Patent Document 1 discloses a method of forming an organic light emitting layer by an electrodeposition method in the production of an organic light emitting element.
日本国公開特許公報「特開２００２－３１３５６５」Japanese Patent Laid-Open Publication "JP 2002-313565"
　特許文献１に記載の技術においては、互いに異なる材料を含む、複数の層を形成する場合には、当該層を形成するごとに電着液の変更を行う必要がある。このために、タクトタイムの増加が問題となる。 In the technique described in Patent Document 1, when forming a plurality of layers containing different materials, it is necessary to change the electrodeposition liquid each time the layers are formed. Therefore, an increase in takt time becomes a problem.
　上記課題を解決するために、本発明の発光デバイスの製造方法は、基板に形成された基板電極に対する、機能粒子の電着を行う発光デバイスの製造方法であって、前記基板と、該基板に平行に配置された対向電極との間において、第１粒子と、当該第１粒子と異なる第２粒子とを、前記機能粒子として含む電着液を挟持する基板把持工程と、前記基板把持工程の後、前記基板電極の内の第１基板電極と、前記対向電極との間に、第１電圧を印加し、前記第１粒子を前記第１基板電極に成膜する第１成膜工程と、前記第１成膜工程に次いで、前記基板電極の内の第２基板電極と、前記対向電極との間に、第２電圧を印加し、前記第２粒子を前記第２基板電極に成膜する第２成膜工程とを備え、前記第１電圧の絶対値が、前記第２電圧の絶対値よりも小さい。 In order to solve the above problems, a method for producing a light emitting device of the present invention is a method for producing a light emitting device in which functional particles are electrodeposited on a substrate electrode formed on a substrate, the substrate and the substrate A substrate gripping step of sandwiching an electrodeposition liquid containing first particles and second particles different from the first particles as the functional particles between the counter electrodes arranged in parallel; A first film forming step of applying a first voltage between the first substrate electrode of the substrate electrodes and the counter electrode to form the first particles on the first substrate electrode; Subsequent to the first film forming step, a second voltage is applied between the second substrate electrode of the substrate electrodes and the counter electrode to form the second particles on the second substrate electrode. A second film forming step, wherein the absolute value of the first voltage is smaller than the absolute value of the second voltage.
　上記構成により、発光デバイスの製造におけるタクトタイムを短縮できる。 With the above configuration, the tact time in manufacturing a light emitting device can be shortened.
本発明の実施形態１に係る発光デバイスの製造方法を説明するための工程断面図である。6A to 6D are process cross-sectional views for explaining the method for manufacturing the light-emitting device according to the first embodiment of the present invention. 本発明の実施形態１に係る基板の概略図である。It is a schematic diagram of a substrate concerning Embodiment 1 of the present invention. 本発明の実施形態１に係る発光デバイスの製造装置の概略図である。1 is a schematic diagram of a light emitting device manufacturing apparatus according to a first embodiment of the present invention. 本発明の実施形態１に係る発光デバイスの製造装置において、基板を電着槽に押し付けた状態における、当該製造装置の概略図である。FIG. 3 is a schematic view of the manufacturing apparatus of the light emitting device according to Embodiment 1 of the present invention in a state where the substrate is pressed against the electrodeposition tank. 本発明の実施形態１に係る発光デバイスの製造方法を説明するためのフローチャートである。3 is a flowchart illustrating a method of manufacturing the light emitting device according to the first embodiment of the invention. 本発明の実施形態１に係る電着液に含まれる機能粒子の概略図である。FIG. 3 is a schematic view of functional particles contained in the electrodeposition liquid according to the first embodiment of the present invention. 本発明の実施形態１および変形例に係る発光デバイスの製造装置を用いた電着工程における、印加電圧と経過時間との関係を示すグラフである。7 is a graph showing a relationship between applied voltage and elapsed time in an electrodeposition process using the light emitting device manufacturing apparatus according to the first embodiment and the modification of the present invention. 本発明の実施形態１に係る発光デバイスの製造方法における課題を説明するための、発光デバイスの製造装置および基板の断面図である。FIG. 3 is a cross-sectional view of the light-emitting device manufacturing apparatus and the substrate for explaining the problems in the light-emitting device manufacturing method according to the first embodiment of the present invention. 本発明の実施形態２および実施形態３に係る基板の概略図である。It is the schematic of the board|substrate which concerns on Embodiment 2 and Embodiment 3 of this invention. 本発明の実施形態２に係る発光デバイスの製造装置において、基板を電着槽に押し付けた状態における、当該製造装置の概略図である。In the manufacturing apparatus of the light emitting device which concerns on Embodiment 2 of this invention, it is the schematic of the said manufacturing apparatus in the state which pressed the board|substrate to the electrodeposition tank. 本発明の実施形態２に係る発光デバイスの製造方法を説明するためのフローチャートである。6 is a flowchart illustrating a method for manufacturing a light emitting device according to a second embodiment of the invention. 本発明の実施形態２に係る電着工程を説明するための工程断面図である。FIG. 6 is a process cross-sectional view for explaining an electrodeposition process according to Embodiment 2 of the present invention. 本発明の実施形態２に係る表示デバイスの製造装置を用いた電着工程を、比較形態に係る表示デバイスの製造装置を用いた電着工程と比較して説明するための工程断面図である。FIG. 7 is a process cross-sectional view for explaining an electrodeposition process using the display device manufacturing apparatus according to the second embodiment of the present invention in comparison with an electrodeposition process using the display device manufacturing apparatus according to the comparative embodiment. 本発明の実施形態３に係る発光デバイスの製造方法を説明するためのフローチャートである。6 is a flowchart for explaining a method for manufacturing a light emitting device according to Embodiment 3 of the present invention. 本発明の実施形態３に係る電着工程を説明するための工程断面図である。FIG. 6 is a process cross-sectional view for explaining an electrodeposition process according to Embodiment 3 of the present invention. 本発明の実施形態３に係る発光デバイスの一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the light emitting device which concerns on Embodiment 3 of this invention. 本発明の実施形態４に係る電着工程を説明するための工程断面図である。It is a process sectional view for explaining the electrodeposition process concerning Embodiment 4 of the present invention. 本発明の実施形態４に係る発光デバイスの一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the light emitting device which concerns on Embodiment 4 of this invention.
　〔実施形態１〕
　本実施形態においては、図２に示す基板Ｃに対して電着を実施するための製造装置および製造方法について説明を行う。図２は、本実施形態に係る基板Ｃの概略斜視図である。図２に示すように、基板Ｃは、基板電極として、単一の平面電極Ｕと、電着槽接続用電極Ｄとを備える。 [Embodiment 1]
In the present embodiment, a manufacturing apparatus and a manufacturing method for performing electrodeposition on the substrate C shown in FIG. 2 will be described. FIG. 2 is a schematic perspective view of the substrate C according to this embodiment. As shown in FIG. 2, the substrate C includes a single flat electrode U and an electrodeposition bath connection electrode D as substrate electrodes.
　平面電極Ｕは、基板Ｃの何れか一方の面上において露出するように、基板Ｃに形成されている。例えば、平面電極Ｕは、基板Ｃ上において、矩形状に形成されている。 The flat electrode U is formed on the substrate C so as to be exposed on one of the surfaces of the substrate C. For example, the plane electrode U is formed in a rectangular shape on the substrate C.
　電着槽接続用電極Ｄは、基板Ｃの平面電極Ｕが形成された面上において、基板Ｃの互いに直交する何れか２辺に沿って形成される。平面電極Ｕと電着槽接続用電極Ｄとは電気的に導通しているため、電着槽接続用電極Ｄに電圧を印加することにより、平面電極Ｕに電圧を印加することができる。なお、電着槽接続用電極Ｄは、基板Ｃの平面電極Ｕが形成された面上に形成されている限り、基板Ｃの直交する２辺に沿って形成される構成のみならず、基板Ｃの何れか１辺に沿ってのみ設けられる等、形状は特に限られない。 The electrodeposition bath connecting electrode D is formed on any two sides of the substrate C orthogonal to each other on the surface of the substrate C on which the planar electrode U is formed. Since the flat electrode U and the electrodeposition bath connecting electrode D are electrically connected to each other, a voltage can be applied to the flat electrode U by applying a voltage to the electrodeposition bath connecting electrode D. As long as the electrodeposition bath connection electrode D is formed on the surface of the substrate C on which the planar electrode U is formed, the electrodeposition bath connection electrode D is not limited to be formed along two orthogonal sides of the substrate C, but also the substrate C. The shape is not particularly limited, such as being provided only along any one of the sides.
　平面電極Ｕおよび電着槽接続用電極Ｄは、基板Ｃの平面電極Ｕおよび電着槽接続用電極Ｄが形成された面と面一であり、当該面において露出している。 The flat electrode U and the electrodeposition bath connection electrode D are flush with the surface of the substrate C on which the flat electrode U and the electrodeposition bath connection electrode D are formed, and are exposed at the surfaces.
　図３は、本実施形態に係る発光デバイスの製造装置２の概略図である。図３の（ａ）は、発光デバイスの製造装置２の斜視図である。図３の（ｂ）は、発光デバイスの製造装置２の上面図である。図３の（ｃ）は、図３の（ｂ）における、Ａ－Ａ線矢視断面図である。なお、図３の（ａ）においては、基板Ｃが発光デバイスの製造装置２に設置された様子を図示する。しかしながら、図示の簡単のために、図３の（ｂ）および図３の（ｃ）においては、基板Ｃの図示を省略している。 FIG. 3 is a schematic diagram of the light emitting device manufacturing apparatus 2 according to the present embodiment. FIG. 3A is a perspective view of the light emitting device manufacturing apparatus 2. FIG. 3B is a top view of the light emitting device manufacturing apparatus 2. 3C is a cross-sectional view taken along the line AA in FIG. It should be noted that FIG. 3A illustrates a state where the substrate C is installed in the light emitting device manufacturing apparatus 2. However, for simplicity of illustration, the illustration of the substrate C is omitted in FIGS. 3B and 3C.
　また、本明細書において、各図の発光デバイスの製造装置２の上面図は、特に断りの無い限り、図３の（ｂ）に対応する位置における上面図を示すものとする。さらに、本明細書において、各図の発光デバイスの製造装置２の断面図は、特に断りの無い限り、図３の（ｃ）に対応する位置における断面図を示すものとする。 In addition, in the present specification, the top view of the light-emitting device manufacturing apparatus 2 in each drawing is a top view at a position corresponding to (b) of FIG. 3 unless otherwise specified. Further, in the present specification, the cross-sectional view of the light-emitting device manufacturing apparatus 2 in each drawing is a cross-sectional view at a position corresponding to (c) of FIG. 3 unless otherwise specified.
　図３に示すように、本実施形態に係る発光デバイスの製造装置２は、電着槽４と、底面電極８と、加圧部１０と、電着電源１２とを備える。 As shown in FIG. 3, the light emitting device manufacturing apparatus 2 according to the present embodiment includes an electrodeposition tank 4, a bottom electrode 8, a pressing unit 10, and an electrodeposition power source 12.
　電着槽４は、電着槽４の外形を規定する外側面１４と、電着槽４の内部４Ａを規定する内側面１６および底面１８を含む。外側面１４と内側面１６との間には、縁部２０が規定される。縁部２０の上面には、複数の基板接続用電極２２が形成されている。すなわち、電着槽４の外周には、複数の基板接続用電極２２が形成されている。 The electrodeposition tank 4 includes an outer side surface 14 that defines the outer shape of the electrodeposition tank 4, and an inner side surface 16 and a bottom surface 18 that define the inside 4A of the electrodeposition tank 4. An edge portion 20 is defined between the outer side surface 14 and the inner side surface 16. A plurality of substrate connecting electrodes 22 are formed on the upper surface of the edge portion 20. That is, a plurality of substrate connecting electrodes 22 are formed on the outer periphery of the electrodeposition tank 4.
　底面電極８は、電着槽４の底面１８に形成されている。底面電極８は、底面１８と面一であり、かつ、底面１８から露出している。さらに、発光デバイスの製造装置２に基板Ｃが設置された際に、底面電極８は、基板Ｃに形成された平面電極Ｕと向かい合う対向電極となる。 The bottom electrode 8 is formed on the bottom surface 18 of the electrodeposition tank 4. The bottom surface electrode 8 is flush with the bottom surface 18 and is exposed from the bottom surface 18. Further, when the substrate C is installed in the light emitting device manufacturing apparatus 2, the bottom surface electrode 8 serves as a counter electrode facing the flat electrode U formed on the substrate C.
　加圧部１０は、基板Ｃと電着槽４との少なくとも一方を移動させて、基板Ｃと電着槽４との相対距離を制御する機構を有する。本実施形態においては、基板Ｃを加圧部１０に配置することにより、発光デバイスの製造装置２への基板Ｃの設置が実施されるとする。基板Ｃを加圧部１０に配置する際、基板Ｃの平面電極Ｕが、電着槽４の底面電極８と、平行に向かい合うように、基板Ｃを配置する。 The pressurizing unit 10 has a mechanism for moving at least one of the substrate C and the electrodeposition tank 4 to control the relative distance between the substrate C and the electrodeposition tank 4. In the present embodiment, it is assumed that the substrate C is placed in the manufacturing apparatus 2 for a light emitting device by disposing the substrate C in the pressure unit 10. When disposing the substrate C on the pressurizing unit 10, the substrate C is disposed so that the planar electrode U of the substrate C faces the bottom electrode 8 of the electrodeposition tank 4 in parallel.
　加圧部１０としては、例えば、基板Ｃを把持する真空チャックであってもよい。この場合、加圧部１０は、基板Ｃを電着槽４に対して移動させることにより、基板Ｃと電着槽４との相対距離を制御してもよい。 The pressing unit 10 may be, for example, a vacuum chuck that holds the substrate C. In this case, the pressurizing unit 10 may control the relative distance between the substrate C and the electrodeposition tank 4 by moving the substrate C with respect to the electrodeposition tank 4.
　加圧部１０は、基板Ｃと電着槽４と接近させて、互いに接触させる位置まで、基板Ｃと電着槽４とを互いに近接させることができる。基板Ｃと電着槽４とが互いに押し付けられた状態における、図３の（ａ）および図３の（ｃ）に対応する概略図を、図４の（ａ）および図４の（ｂ）にそれぞれ示す。なお、図４の（ｂ）については、基板Ｃの断面についても図示をしている。 The pressurizing unit 10 can bring the substrate C and the electrodeposition tank 4 close to each other until the substrate C and the electrodeposition tank 4 come close to each other. 4A and 4B are schematic diagrams corresponding to FIGS. 3A and 3C in a state where the substrate C and the electrodeposition tank 4 are pressed against each other. Shown respectively. 4B, the cross section of the substrate C is also illustrated.
　基板Ｃと電着槽４とが互いに押し付けられた際、図４の（ｂ）に示すように、底面電極８は、内部４Ａを介して、基板Ｃの平面電極Ｕと対向する。すなわち、基板Ｃと電着槽４とが互いに押し付けられた状態においては、基板Ｃと、基板Ｃと平行である底面電極８との間において、内部４Ａを挟持する。 When the substrate C and the electrodeposition tank 4 are pressed against each other, the bottom electrode 8 faces the flat electrode U of the substrate C via the inside 4A, as shown in FIG. 4(b). That is, when the substrate C and the electrodeposition tank 4 are pressed against each other, the inside 4A is sandwiched between the substrate C and the bottom electrode 8 that is parallel to the substrate C.
　また、基板Ｃと電着槽４とが互いに押し付けられた際、図４の（ｂ）に示すように、電着槽４の基板接続用電極２２と、基板Ｃの電着槽接続用電極Ｄとが接触し、互いに電気的に導通する。なお、図３の（ｃ）および図４の（ｂ）に示すように、電着槽４は、基板接続用電極２２と、電着槽接続用電極Ｄとの電気的導通を補助するために、基板接続用電極２２を押し上げるバネ３８を、各基板接続用電極２２の下部に備えていてもよい。 Further, when the substrate C and the electrodeposition bath 4 are pressed against each other, as shown in FIG. 4B, the electrode 22 for connecting the substrate of the electrodeposition bath 4 and the electrode D for connecting the electrodeposition bath of the substrate C And come into contact with each other and become electrically conductive with each other. As shown in (c) of FIG. 3 and (b) of FIG. 4, the electrodeposition bath 4 serves to assist the electrical continuity between the substrate connection electrode 22 and the electrodeposition bath connection electrode D. A spring 38 that pushes up the substrate connection electrode 22 may be provided below each substrate connection electrode 22.
　ここで、図３の（ｃ）に示すように、側面１６と底面１８とにより規定された、内部４Ａは、縁部２０の上面から底面電極８の上面までの距離ｄ１を有する。この距離ｄ１は、内部４Ａの深さに相当し、図４の（ｂ）に示すように、基板Ｃと電着槽４とが互いに押し付けられた際の、底面電極８と平面電極Ｕとの間の距離と、実質的に一致する。 Here, as shown in (c) of FIG. 3, the interior 4A defined by the side surface 16 and the bottom surface 18 has a distance d1 from the upper surface of the edge portion 20 to the upper surface of the bottom electrode 8. This distance d1 corresponds to the depth of the interior 4A, and as shown in FIG. 4B, when the substrate C and the electrodeposition bath 4 are pressed against each other, the bottom electrode 8 and the flat electrode U are separated from each other. Substantially equal to the distance between.
　電着電源１２は、底面電極８と基板接続用電極２２とに対して、少なくとも２値の電圧を印加する電源である。さらに、電着電源１２は、基板接続用電極２２および電着槽接続電極Ｄを介して、基板Ｃの平面電極Ｕに対しても電圧を印加してもよい。したがって、電着電源１２は、平面電極Ｕと底面電極８との間に、少なくとも２値の電圧を印加してもよい。 The electrodeposition power source 12 is a power source that applies at least a binary voltage to the bottom surface electrode 8 and the substrate connecting electrode 22. Further, the electrodeposition power source 12 may apply a voltage to the planar electrode U of the substrate C via the substrate connecting electrode 22 and the electrodeposition bath connecting electrode D. Therefore, the electrodeposition power source 12 may apply at least a binary voltage between the flat electrode U and the bottom electrode 8.
　ここで、基板Ｃと電着槽４とが互いに押し付けられた際、基板接続用電極２２および電着槽接続電極Ｄを介した、平面電極Ｕに対する電圧印加が可能である限り、基板接続用電極２２の形状についても、特に限定されない。例えば、電着槽接続電極Ｄが基板Ｃの１辺に沿って形成さえている場合、基板接続用電極２２は、基板Ｃと電着槽４とが互いに押し付けられた際、電着槽接続電極Ｄと重畳する、縁部２０の上面の内の１辺に沿って形成されていてもよい。 Here, when the substrate C and the electrodeposition bath 4 are pressed against each other, as long as a voltage can be applied to the planar electrode U via the substrate connection electrode 22 and the electrodeposition bath connection electrode D, the substrate connection electrode The shape of 22 is also not particularly limited. For example, when the electrodeposition bath connection electrode D is even formed along one side of the substrate C, the electrode 22 for substrate connection is the electrodeposition bath connection electrode when the substrate C and the electrodeposition bath 4 are pressed against each other. It may be formed along one side of the upper surface of the edge portion 20 that overlaps with D.
　本実施形態に係る発光デバイスの製造装置２を用いて、基板Ｃの平面電極Ｕ上に電着による成膜を実行する一例について、図５および図１を参照して説明する。図５は、本実施形態に係る発光デバイスの製造装置２を用いた製造方法の一例を説明するためのフローチャートである。図１は、図５に示す製造方法における、発光デバイスの製造装置２および基板Ｃの工程断面図である。 An example of performing film formation by electrodeposition on the planar electrode U of the substrate C using the light emitting device manufacturing apparatus 2 according to this embodiment will be described with reference to FIGS. 5 and 1. FIG. 5 is a flowchart for explaining an example of a manufacturing method using the light emitting device manufacturing apparatus 2 according to the present embodiment. FIG. 1 is a process cross-sectional view of a light emitting device manufacturing apparatus 2 and a substrate C in the manufacturing method shown in FIG.
　本実施形態に係る発光デバイスの製造方法においては、はじめに、図１の（ａ）に示すように、発光デバイスの製造装置２に基板Ｃを設置する（ステップＳ２）。ステップＳ２は、例えば、基板Ｃの平面電極Ｕが底面電極８と向かい合うように、基板Ｃを加圧部１０に設置することにより実行される。本実施形態においては、ステップＳ２において加圧部１０に設置された基板Ｃを、電着槽４に近接させる前に、内部４Ａに電着液Ｌ１が充填されている。 In the method for manufacturing a light emitting device according to this embodiment, first, as shown in FIG. 1A, the substrate C is installed in the light emitting device manufacturing apparatus 2 (step S2). Step S2 is performed, for example, by placing the substrate C on the pressing unit 10 so that the planar electrode U of the substrate C faces the bottom electrode 8. In the present embodiment, the inside 4A is filled with the electrodeposition liquid L1 before the substrate C installed in the pressurizing unit 10 is brought close to the electrodeposition tank 4 in step S2.
　本実施形態において、電着液Ｌ１は、複数の機能粒子を含む。電着液Ｌ１が含む機能粒子は、溶媒である電着液Ｌ１中に分散されている。電着液Ｌ１としては、例えば、水、アルキルアルコール、トルエン、プロピレングリコールモノメチルエーテルアセテート（ＰＧＭＥＡ）、またはアルカン等が挙げられる。 In the present embodiment, the electrodeposition liquid L1 contains a plurality of functional particles. The functional particles contained in the electrodeposition liquid L1 are dispersed in the electrodeposition liquid L1 which is a solvent. Examples of the electrodeposition liquid L1 include water, alkyl alcohol, toluene, propylene glycol monomethyl ether acetate (PGMEA), alkane, and the like.
　電着液Ｌ１が含む機能粒子は、例えば、発光素子の機能層の材料であってもよい。発光素子の機能層としては、例えば、発光素子の電極間に形成される、電子輸送層、発光層、または正孔輸送層が挙げられる。特に、機能粒子が、発光層の材料である場合は、当該機能粒子は、自発光粒子であってもよい。本実施形態における機能粒子は、無機ナノ粒子を含んでいてもよく、特に、半導体ナノ粒子、すなわち、量子ドットを含んでいてもよい。 The functional particles contained in the electrodeposition liquid L1 may be, for example, the material of the functional layer of the light emitting element. Examples of the functional layer of the light emitting element include an electron transport layer, a light emitting layer, or a hole transport layer formed between electrodes of the light emitting element. In particular, when the functional particles are the material of the light emitting layer, the functional particles may be self-luminous particles. The functional particles in the present embodiment may include inorganic nanoparticles, and particularly may include semiconductor nanoparticles, that is, quantum dots.
　本実施形態における機能粒子が、発光層のナノ粒子材料である場合は、当該機能粒子が、ＣｄＳｅ、ＺｎＳｅ、またはＩｎＰ等からなる、単一コア構造を備えていてもよい。また、本実施形態における機能粒子は、ＣｄＳｅ／ＺｎＳ、ＩｎＰ／ＺｎＳ、ＣｄＳｅ／ＣｄＳ、またはＺｎＳｅ／ＺｎＳ等からなる、コア／シェル構造を備えていてもよい。また、本実施形態における機能粒子は、ＣｄＳｅ／ＺｎＳｅ／ＺｎＳ等からなる、マルチシェル構造を備えていてもよい。 When the functional particles in the present embodiment are the nanoparticle material of the light emitting layer, the functional particles may have a single core structure made of CdSe, ZnSe, InP or the like. Further, the functional particles in the present embodiment may have a core/shell structure composed of CdSe/ZnS, InP/ZnS, CdSe/CdS, ZnSe/ZnS, or the like. Further, the functional particles in the present embodiment may have a multi-shell structure composed of CdSe/ZnSe/ZnS or the like.
　本実施形態における機能粒子が、電子輸送層のナノ粒子材料である場合は、当該機能粒子が、ＺｎＯ、ＺｒＯ、ＭｇＺｎＯ、ＡｌＺｎＯ、ＴｉＯ２、Ｔａ２Ｏ３、またはＳｒＴｉＯ３等を含んでいてもよい。本実施形態における機能粒子が、正孔輸送層のナノ粒子材料である場合は、当該機能粒子が、ＮｉＯ、ＣｕＩ、Ｃｕ２Ｏ、ＣｏＯ、Ｃｒ２Ｏ３、またはＭｏＯ３等を含んでいてもよい。 When the functional particles in the present embodiment are the nanoparticle material of the electron transport layer, even if the functional particles include ZnO, ZrO, MgZnO, AlZnO, TiO 2 , Ta 2 O 3 , SrTiO 3 or the like. Good. When the functional particles in the present embodiment are the nanoparticle material of the hole transport layer, the functional particles may include NiO, CuI, Cu 2 O, CoO, Cr 2 O 3 or MoO 3. Good.
　さらに、本実施形態において、電着液Ｌ１は、図１の（ａ）に示すように、機能粒子として、互いに異なる粒子である、第１粒子Ｍ１と第２粒子Ｍ２とを含む。特に、第１粒子Ｍ１と第２粒子Ｍ２とが、発光層の材料である場合は、第１粒子Ｍ１と第２粒子Ｍ２とは、互いに異なる光を発する自発光粒子であってもよい。 Further, in the present embodiment, the electrodeposition liquid L1 includes, as functional particles, first particles M1 and second particles M2 which are particles different from each other as functional particles, as shown in (a) of FIG. In particular, when the first particles M1 and the second particles M2 are materials for the light emitting layer, the first particles M1 and the second particles M2 may be self-luminous particles that emit different lights.
　本実施形態において、電着液Ｌ１が含む機能粒子は、当該機能粒子のそれぞれに配位結合する配位子を備えていてもよい。例えば、図６の（ａ）に示すように、第１粒子Ｍ１は、周囲に第１配位子Ｒ１が配位した構造を有していてもよく、第２粒子Ｍ２は、周囲に、第１配位子Ｒ１とは異なる第２配位子Ｒ２が配位した構造を有していてもよい。本実施形態における配位子としては、例えば、メルカプトアルカン酸、アルカンチオール、アルキルアミン、アルカン、アルケン、トリオクチルホスフィン（ＴＯＰ）、または酸化トリオクチルホスフィン（ＴＯＰＯ）等が挙げられる。 In the present embodiment, the functional particles contained in the electrodeposition liquid L1 may include a ligand that forms a coordinate bond with each of the functional particles. For example, as shown in (a) of FIG. 6, the first particles M1 may have a structure in which the first ligand R1 is coordinated around, and the second particles M2 are It may have a structure in which a second ligand R2 different from the one ligand R1 is coordinated. Examples of the ligand in the present embodiment include mercaptoalkanoic acid, alkanethiol, alkylamine, alkane, alkene, trioctylphosphine (TOP), trioctylphosphine oxide (TOPO), and the like.
　次いで、加圧部１０を制御して、基板Ｃを電着槽４に押し付ける（ステップＳ４）。ステップＳ４の実行により、図１の（ｂ）に示すように、基板Ｃの平面電極Ｕが形成された面と、縁部２０の上面とが当接する。これにより、内部４Ａに充填された電着液Ｌ１を、基板Ｃと、基板Ｃと平行である底面電極８との間において挟持する、基板把持工程を実施する。 Next, the pressurizing unit 10 is controlled to press the substrate C against the electrodeposition tank 4 (step S4). By executing step S4, as shown in FIG. 1B, the surface of the substrate C on which the planar electrode U is formed and the upper surface of the edge portion 20 are in contact with each other. As a result, the substrate gripping step of sandwiching the electrodeposition liquid L1 filled in the interior 4A between the substrate C and the bottom electrode 8 parallel to the substrate C is performed.
　この際、基板Ｃから露出した平面電極Ｕの表面は、内部４Ａの電着液Ｌ１に浸漬される。このため、電着液Ｌ１は、内部４Ａが満たされ、内部４Ａの電着液Ｌ１の液面が、表面張力により、縁部２０の上面よりも若干高くなるように、内部４Ａに充填される。これにより、基板Ｃの平面電極Ｕが形成された面が面一であったとしても、当該面が縁部２０の上面と当接した際、平面電極Ｕの表面が電着液Ｌ１に浸漬される。 At this time, the surface of the flat electrode U exposed from the substrate C is immersed in the electrodeposition liquid L1 in the interior 4A. Therefore, the inside 4A is filled with the electrodeposition liquid L1, and the inside 4A is filled such that the liquid surface of the electrodeposition liquid L1 in the inside 4A is slightly higher than the upper surface of the edge portion 20 due to the surface tension. .. Thereby, even if the surface of the substrate C on which the planar electrode U is formed is flush, when the surface comes into contact with the upper surface of the edge portion 20, the surface of the planar electrode U is immersed in the electrodeposition liquid L1. It
　また、ステップＳ４において、確実に平面電極Ｕの表面を電着液Ｌ１に浸漬するために、ステップＳ４において縁部２０と当接する部分のみ、基板Ｃを薄く形成してもよい。当該構成であれば、基板Ｃと縁部２０と当接した際、平面電極Ｕの表面が縁部２０の上面よりも内部４Ａに入り込むため、より確実に平面電極Ｕの表面が電着液Ｌ１に浸漬される。 In addition, in order to surely immerse the surface of the flat electrode U in the electrodeposition liquid L1 in step S4, the substrate C may be thinly formed only in the portion contacting the edge portion 20 in step S4. With this configuration, when the substrate C and the edge portion 20 are brought into contact with each other, the surface of the flat electrode U enters into the interior 4A more than the upper surface of the edge portion 20, so that the surface of the flat electrode U is more surely contacted. Be immersed in.
　なお、ステップＳ４により、基板Ｃが縁部２０の上面に押し付けられるため、図１の（ｂ）に示すように、基板Ｃに形成された電着槽接続用電極Ｄと、縁部２０の上面から露出する基板接続用電極２２とが当接し、電気的に導通する。 Since the substrate C is pressed against the upper surface of the edge portion 20 in step S4, as shown in FIG. 1B, the electrodeposition tank connection electrode D formed on the substrate C and the upper surface of the edge portion 20. The substrate connecting electrode 22 exposed from the abutment is brought into contact with and electrically connected.
　ステップＳ４に次いで、電着工程を実施する。 After step S4, the electrodeposition process is performed.
　本実施形態において、第１粒子Ｍ１と第２粒子Ｍ２とは、特定の官能基を備えることにより、極性を有している。このため、電着工程においては、底面電極８と平面電極Ｕとの間に生じる電界によって、第１粒子Ｍ１と第２粒子Ｍ２とが、クーロン相互作用により、電着液Ｌ１中を泳動する。さらに、第１粒子Ｍ１と第２粒子Ｍ２とは、同じ極性を有している。本実施形態においては、電着工程において、第１粒子Ｍ１と第２粒子Ｍ２とが、平面電極Ｕに向かって泳動するように、各電極に印加される電圧が制御される。 In the present embodiment, the first particles M1 and the second particles M2 have polarities by having a specific functional group. Therefore, in the electrodeposition step, the first particles M1 and the second particles M2 migrate in the electrodeposition liquid L1 by Coulomb interaction due to the electric field generated between the bottom electrode 8 and the flat electrode U. Further, the first particles M1 and the second particles M2 have the same polarity. In the present embodiment, in the electrodeposition step, the voltage applied to each electrode is controlled so that the first particles M1 and the second particles M2 migrate toward the flat electrode U.
　また、第１粒子Ｍ１と第２粒子Ｍ２とのそれぞれは、平面電極Ｕに吸着され、平面電極Ｕに成膜されるために必要な、底面電極８と平面電極Ｕとの間の閾値電圧がそれぞれ異なっている。各機能粒子に対する閾値電圧は、当該機能粒子の粒径、配位する配位子の種類、または、当該機能粒子１つに配位する配位の個数によって異なる。 Further, each of the first particles M1 and the second particles M2 has a threshold voltage between the bottom electrode 8 and the plane electrode U, which is necessary for being adsorbed to the plane electrode U and forming a film on the plane electrode U. Each is different. The threshold voltage for each functional particle differs depending on the particle size of the functional particle, the type of ligand to be coordinated, or the number of coordinations to one functional particle.
　本実施形態においては、第１粒子Ｍ１に対する閾値電圧である、第１閾値電圧Ｖ１の絶対値が、第２粒子Ｍ２に対する閾値電圧である、第２閾値電圧Ｖ２の絶対値よりも低い。すなわち、第１粒子Ｍ１は、第２粒子Ｍ２と比較して、より小さな底面電極８と平面電極Ｕとの間の電界下において、平面電極Ｕに吸着され、成膜される。 In the present embodiment, the absolute value of the first threshold voltage V1 that is the threshold voltage for the first particles M1 is lower than the absolute value of the second threshold voltage V2 that is the threshold voltage for the second particles M2. That is, the first particles M1 are adsorbed to the flat electrode U to form a film under an electric field between the bottom electrode 8 and the flat electrode U, which are smaller than the second particles M2.
　本実施形態は、電着工程において、はじめに、絶対値が、第１閾値電圧Ｖ１の絶対値以上であり、かつ、第２閾値電圧Ｖ２の絶対値未満である、第１電圧を、底面電極８と平面電極Ｕとの間に印加する、第１成膜工程を実施する（ステップＳ６）。ステップＳ６においては、図１の（ｃ）に示すように、電着液Ｌ１に含まれる機能粒子のうち、第１粒子Ｍ１のみが平面電極Ｕに泳動し、平面電極Ｕ上に吸着される。 In the present embodiment, in the electrodeposition step, first, the first voltage whose absolute value is equal to or more than the absolute value of the first threshold voltage V1 and less than the absolute value of the second threshold voltage V2 is applied to the bottom electrode 8 The first film forming step of applying the voltage between the substrate and the flat electrode U is performed (step S6). In step S6, as shown in (c) of FIG. 1, among the functional particles contained in the electrodeposition liquid L1, only the first particles M1 migrate to the flat electrode U and are adsorbed on the flat electrode U.
　ステップＳ６における電圧印加を十分におこなうことにより、平面電極Ｕ上に、図１の（ｃ）に示す、第１粒子Ｍ１を含む第１層Ｆ１が成膜される。なお、ステップＳ６は、電着槽４中の第１粒子Ｍ１のほぼ全てが、第１層Ｆ１の成膜のために、平面電極Ｕ上に吸着されるまで実施される。 By sufficiently applying the voltage in step S6, the first layer F1 including the first particles M1 shown in FIG. 1C is formed on the planar electrode U. In addition, step S6 is performed until almost all of the first particles M1 in the electrodeposition tank 4 are adsorbed on the flat electrode U for forming the first layer F1.
　ステップＳ６に次いで、絶対値が、第２閾値電圧Ｖ２の絶対値以上である、第２電圧を、底面電極８と平面電極Ｕとの間に印加する、第２成膜工程を実施する（ステップＳ８）。ステップＳ８においては、第２粒子Ｍ２についても平面電極Ｕに泳動し、平面電極Ｕ上に吸着される。ステップＳ８における電圧印加を十分におこなうことにより、第１層Ｆ１上に、図１の（ｄ）に示す、第２粒子Ｍ２を含む第２層Ｆ２が成膜される。 Subsequent to step S6, a second film forming step of applying a second voltage whose absolute value is greater than or equal to the absolute value of the second threshold voltage V2 between the bottom electrode 8 and the flat electrode U (step) is performed. S8). In step S8, the second particles M2 also migrate to the flat electrode U and are adsorbed on the flat electrode U. By sufficiently applying the voltage in step S8, the second layer F2 including the second particles M2 shown in (d) of FIG. 1 is formed on the first layer F1.
　ステップＳ６において、電着槽４中の第１粒子Ｍ１はほぼ全て消費されているため、ステップＳ８において、第２層Ｆ２中に第１粒子Ｍ１が混在することを低減できる。なお、第２層Ｆ２中の第１粒子Ｍ１の密度が、最終的な発光デバイスとしての不良の基準を下回る限りは、第２層Ｆ２に微量の第１粒子Ｍ１が含まれていてもよい。したがって、本実施形態においては、ステップＳ８において、微量の第１粒子Ｍ１が電着槽４中に含まれていてもよい。 Since almost all the first particles M1 in the electrodeposition tank 4 are consumed in step S6, it is possible to reduce the mixing of the first particles M1 in the second layer F2 in step S8. The second layer F2 may contain a small amount of the first particles M1 as long as the density of the first particles M1 in the second layer F2 is lower than the standard of the defect as a final light emitting device. Therefore, in the present embodiment, a slight amount of the first particles M1 may be included in the electrodeposition tank 4 in step S8.
　なお、本実施形態においては、電着液Ｌ１に含まれる機能材料が有する極性が、負極性である場合を例示している。すなわち、底面電極８には負の極性の電圧を印加し、平面電極Ｕには正の極性の電圧を印加している。なお、電着液Ｌ１に含まれる機能材料が有する極性が逆転した場合、各電極に印加する電圧の極性についても逆転させればよい。 The present embodiment exemplifies a case where the functional material contained in the electrodeposition liquid L1 has a negative polarity. That is, a voltage of negative polarity is applied to the bottom electrode 8 and a voltage of positive polarity is applied to the plane electrode U. When the polarities of the functional material contained in the electrodeposition liquid L1 are reversed, the polarities of the voltages applied to the electrodes may be reversed.
　次いで、底面電極８と平面電極Ｕとの間の電圧印加を解除し（ステップＳ１０）、電着工程を完了する。次いで、図１の（ｅ）に示すように、電着槽４から基板Ｃを引き上げる（ステップＳ１２）。ステップＳ１２は、加圧部１０を制御して、基板Ｃを電着槽４から引き離すことにより実行される。次いで、加圧部１０から基板Ｃを取り外す（ステップＳ１４）ことにより、下層から、第１層Ｆ１および第２層Ｆ２を、平面電極Ｕ上に積層して備えた基板Ｃを得る。この後、第２層Ｆ２の上層に、対向基板等を形成することにより、発光デバイスを製造してもよい。 Next, the voltage application between the bottom electrode 8 and the flat electrode U is released (step S10), and the electrodeposition process is completed. Next, as shown in FIG. 1E, the substrate C is pulled up from the electrodeposition bath 4 (step S12). Step S12 is executed by controlling the pressurizing unit 10 and separating the substrate C from the electrodeposition tank 4. Next, the substrate C is removed from the pressing unit 10 (step S14) to obtain the substrate C in which the first layer F1 and the second layer F2 are laminated on the flat electrode U from the lower layer. After that, the light emitting device may be manufactured by forming a counter substrate or the like on the upper layer of the second layer F2.
　本実施形態においては、互いに異なる機能粒子の電着を、電着液の交換または電着槽の交換なく実施することが可能である。このため、互いに異なる機能材料をそれぞれ含む複数の層を形成する場合であっても、タクトタイムを低減することができる。 In the present embodiment, it is possible to perform electrodeposition of different functional particles without changing the electrodeposition liquid or the electrodeposition tank. For this reason, the tact time can be reduced even when a plurality of layers respectively containing different functional materials are formed.
　また、本実施形態においては、底面電極８との間に第１電圧を印加する電極である第１基板電極と、底面電極８との間に第２電圧を印加する電極である第２基板電極とが、同一の平面電極Ｕである場合を説明した。本実施形態によれば、互いに異なる機能材料をそれぞれ含む複数の層を、同一の平面電極Ｕ上に積層して形成することができる。 In the present embodiment, the first substrate electrode, which is an electrode that applies the first voltage to the bottom electrode 8, and the second substrate electrode, which is the electrode that applies the second voltage to the bottom electrode 8. The case where and are the same plane electrode U has been described. According to this embodiment, a plurality of layers respectively containing different functional materials can be formed on the same plane electrode U by being laminated.
　なお、電着液Ｌ１の第１粒子Ｍ１と第２粒子Ｍ２との混合は、ステップＳ６、すなわち、第１成膜工程の直前において実行されることが好ましい。第１粒子Ｍ１と第２粒子Ｍ２とが混合されてから長時間が経過した場合、第１粒子Ｍ１と第２粒子Ｍ２との間において、配位子の吸脱着が発生する場合がある。これは、第１粒子Ｍ１と第２粒子Ｍ２との間において、平衡論的に配位子の移動が発生するためである。このため、第１粒子Ｍ１と第２粒子Ｍ２とが混合されてから長時間が経過した場合、図６の（ｂ）に示すように、第１粒子Ｍ１においても、第２粒子Ｍ２においても、第１配位子Ｒ１と第２配位子Ｒ２との両方が配位した状態に変化する場合がある。 The mixing of the first particles M1 and the second particles M2 of the electrodeposition liquid L1 is preferably performed in step S6, that is, immediately before the first film forming step. When a long time has passed since the first particles M1 and the second particles M2 were mixed, adsorption and desorption of ligands may occur between the first particles M1 and the second particles M2. This is because ligand movement occurs equilibrium between the first particles M1 and the second particles M2. Therefore, when a long time has passed since the first particles M1 and the second particles M2 were mixed, as shown in FIG. 6B, both the first particles M1 and the second particles M2 Both the first ligand R1 and the second ligand R2 may change to a coordinated state.
　電着液Ｌ１の第１粒子Ｍ１と第２粒子Ｍ２との混合が第１成膜工程の直前において実行されることにより、上述した配位子の平衡化が生じにくくなる。このため、電着液Ｌ１における、第１粒子Ｍ１と第２粒子Ｍ２とのリガンド組成がより明確に異なるため、第１粒子Ｍ１と第２粒子Ｍ２との特性をより明確に異ならせることができる。したがって、第１閾値電圧Ｖ１と第２閾値電圧Ｖ２とのそれぞれの絶対値についても、より明確に異ならせることができ、結果として、各機能粒子の成膜の歩留まりが向上する。具体的には、第１粒子Ｍ１と第２粒子Ｍ２との混合は、例えば、電着槽４への電着液Ｌ１の充填に併せて実行されてもよい。 By mixing the first particles M1 and the second particles M2 of the electrodeposition liquid L1 immediately before the first film forming step, the above-mentioned equilibration of the ligand is less likely to occur. For this reason, the ligand composition of the first particles M1 and the second particles M2 in the electrodeposition liquid L1 is more clearly different, so that the characteristics of the first particles M1 and the second particles M2 can be more clearly different. .. Therefore, the absolute values of the first threshold voltage V1 and the second threshold voltage V2 can be made to differ more clearly, and as a result, the yield of film formation of each functional particle is improved. Specifically, the mixing of the first particles M1 and the second particles M2 may be performed, for example, together with the filling of the electrodeposition liquid L1 into the electrodeposition tank 4.
　なお、本明細書における「電着」とは、溶液中において二電極間に電位差を生じさせることにより、当該溶液中の材料からなる薄膜を成膜する電気化学的成膜方法を含んでいる。本明細書における「電着」は、例えば、電着法、電着塗装法、電気泳動堆積法、誘電泳動堆積法、ミセル電解法、電気めっき法、電鋳、などの手法を含んでいてもよい。これらの何れかの手法を、上述の電着工程として選択した場合であっても、上述した効果を奏する発光デバイスを製造できる。 The term "electrodeposition" in this specification includes an electrochemical film forming method for forming a thin film of a material in a solution by causing a potential difference between two electrodes in the solution. "Electrodeposition" in the present specification includes, for example, methods such as electrodeposition method, electrodeposition coating method, electrophoretic deposition method, dielectrophoretic deposition method, micelle electrolysis method, electroplating method and electroforming method. Good. Even when any one of these methods is selected as the electrodeposition step described above, it is possible to manufacture a light emitting device that achieves the effects described above.
　〔変形例〕
　本実施形態における変形例について、図７を参照して詳細に説明する。図７の（ａ）から図７の（ｃ）は、ステップＳ６における、底面電極８と平面電極Ｕとの間に印加される電圧を縦軸、当該電圧の印加開始からの経過時間を横軸にとって図示したグラフである。 [Modification]
A modified example of this embodiment will be described in detail with reference to FIG. 7. 7A to 7C, the vertical axis represents the voltage applied between the bottom electrode 8 and the flat electrode U in step S6, and the horizontal axis represents the elapsed time from the start of the application of the voltage. Is a graph illustrated in FIG.
　ステップＳ６における電圧の印加は、例えば、図７の（ａ）のグラフに示すように、底面電極８と平面電極Ｕとの間に、常時第１閾値電圧以上、かつ第２閾値電圧Ｖ２未満の第１電圧を印加し続けることにより実現してもよい。 The voltage application in step S6 is, for example, as shown in the graph of FIG. 7A, between the bottom electrode 8 and the plane electrode U, always higher than or equal to the first threshold voltage and lower than the second threshold voltage V2. It may be realized by continuing to apply the first voltage.
　しかしながら、本実施形態の変形例においては、これに限られず、ステップＳ６における電圧の印加は、図７の（ｂ）に示すように、底面電極８と平面電極Ｕとの間に、第１電圧と、逆電圧ＶＲ（第８電圧）とを交互に印加することにより実現してもよい。すなわち、ステップＳ６は、底面電極８と平面電極Ｕとの間に、第１電圧を印加する順電圧印加工程と、逆電圧ＶＲを印加する逆電圧印加工程とを、交互に実行することにより実現してもよい。 However, in the modified example of the present embodiment, the voltage application in step S6 is not limited to this, and the first voltage is applied between the bottom electrode 8 and the plane electrode U as shown in FIG. 7B. And the reverse voltage VR (eighth voltage) may be alternately applied. That is, step S6 is realized by alternately performing the forward voltage applying step of applying the first voltage and the reverse voltage applying step of applying the reverse voltage VR between the bottom electrode 8 and the flat electrode U. You may.
　逆電圧ＶＲは、第１閾値電圧Ｖ１とは極性が逆の電圧である。逆電圧ＶＲの絶対値は、図７の（ｂ）に示すように、第１閾値電圧Ｖ１よりも小さい。なお、ステップＳ６においては、図７の（ｂ）にも示すように、第１電圧を印加する順電圧印加工程の期間よりも、逆電圧ＶＲを印加する逆電圧印加工程の期間の方が短くてもよい。 The reverse voltage VR has a polarity opposite to that of the first threshold voltage V1. The absolute value of the reverse voltage VR is smaller than the first threshold voltage V1 as shown in FIG. 7B. In addition, in step S6, as shown in FIG. 7B, the period of the reverse voltage applying step of applying the reverse voltage VR is shorter than the period of the forward voltage applying step of applying the first voltage. May be.
　ステップＳ６において、図７の（ａ）のグラフに示すように、底面電極８と平面電極Ｕとの間に、常時第１電圧を印加し続けた場合、第１粒子Ｍ１は常時平面電極側に泳動し続けることとなる。さらに、第２粒子Ｍ２は、平面電極Ｕに吸着はされないものの、平面電極Ｕの方向に泳動はするため、電着槽４中の平面電極Ｕ側においては、第２粒子Ｍ２の密度も上昇している。 In step S6, as shown in the graph of FIG. 7A, when the first voltage is continuously applied between the bottom electrode 8 and the plane electrode U, the first particles M1 are always on the plane electrode side. It will continue to migrate. Further, although the second particles M2 are not adsorbed on the flat electrode U, they migrate in the direction of the flat electrode U, so that the density of the second particles M2 also increases on the flat electrode U side in the electrodeposition tank 4. ing.
　このため、第１粒子Ｍ１に捲き込まれた第２粒子Ｍ２が、第１粒子Ｍ１に抑えつけられるように平面電極Ｕに吸着される場合がある。したがって、上述した場合には、図８に示す、ステップＳ６完了時点における発光デバイスの製造装置２の工程断面図に示すように、第１層Ｆ１中に、第２粒子Ｍ２が微量に析出する場合がある。 Therefore, the second particles M2 caught in the first particles M1 may be adsorbed by the flat electrode U so as to be held by the first particles M1. Therefore, in the above-mentioned case, as shown in the process sectional view of the manufacturing apparatus 2 for a light emitting device at the time of completion of step S6 shown in FIG. There is.
　ステップＳ６において、図７の（ｂ）のグラフに示すように、順電圧印加工程と逆電圧印加工程とを、交互に実行することにより、逆電圧印加工程においては、第１粒子Ｍ１と第２粒子Ｍ２とが、底面電極８に向かって泳動する。このため、第１粒子Ｍ１と第２粒子Ｍ２とが、底面電極８側への泳動と、平面電極Ｕ側への泳動とを繰り返す。順電圧印加工程においては第１電圧を印加しているため、第１粒子Ｍ１は、底面電極８側への泳動と、平面電極Ｕ側への泳動とを繰り返す間に、次第に平面電極Ｕに接近し、最終的には平面電極Ｕに吸着する。 In step S6, as shown in the graph of FIG. 7B, the forward voltage applying step and the reverse voltage applying step are alternately performed, so that the first particles M1 and the second particles M1 The particles M2 migrate toward the bottom electrode 8. Therefore, the first particles M1 and the second particles M2 repeat the migration to the bottom electrode 8 side and the migration to the flat electrode U side. Since the first voltage is applied in the forward voltage applying step, the first particles M1 gradually approach the flat electrode U while repeating the migration to the bottom electrode 8 side and the migration to the flat electrode U side. Finally, it is adsorbed on the flat electrode U.
　第１粒子と第２粒子とが、底面電極８側への泳動と、平面電極Ｕ側への泳動とを繰り返すために、第２粒子Ｍ２が、第１粒子Ｍ１に抑えつけられるように平面電極Ｕに吸着される可能性が低減される。ゆえに、第１層Ｆ１中に第２粒子Ｍ２が含まれるような成膜不良の発生を低減できる。なお、逆電圧ＶＲの絶対値は、第１電圧Ｖ１の絶対値よりも小さいため、第１粒子Ｍ１が底面電極８に吸着されることを低減できる。 Since the first particles and the second particles repeat the migration to the bottom electrode 8 side and the migration to the flat electrode U side, the second electrode M2 is held by the first particle M1 so that the flat electrode is held. The possibility of being adsorbed by U is reduced. Therefore, it is possible to reduce the occurrence of a film formation defect in which the second particles M2 are contained in the first layer F1. Since the absolute value of the reverse voltage VR is smaller than the absolute value of the first voltage V1, it is possible to reduce the adsorption of the first particles M1 to the bottom surface electrode 8.
　なお、順電圧印加工程と逆電圧印加工程とを、交互に実行する手法は、図７の（ｂ）のグラフに示すように、第１電圧と逆電圧ＶＲとを交互に印加する手法に限らない。例えば、図７の（ｃ）に示すように、底面電極８と平面電極Ｕとの間の電圧が、経過時間を横軸として、正弦波を描くように、電圧印加を実施してもよい。この場合、当該正弦波の最大値が第１電圧であってもよく、最小値が逆電圧ＶＲであってもよい。この場合においても、上述した効果が同様に得られる。なお、他の例として、底面電極８と平面電極Ｕとの間の電圧は、経過時間を横軸として、疑似正弦波または三角波を描いていてもよい。 Note that the method of alternately performing the forward voltage applying step and the reverse voltage applying step is not limited to the method of alternately applying the first voltage and the reverse voltage VR as shown in the graph of FIG. 7B. Absent. For example, as shown in FIG. 7C, the voltage may be applied so that the voltage between the bottom electrode 8 and the plane electrode U draws a sine wave with the elapsed time as the horizontal axis. In this case, the maximum value of the sine wave may be the first voltage and the minimum value may be the reverse voltage VR. Also in this case, the above-mentioned effects can be obtained similarly. As another example, the voltage between the bottom surface electrode 8 and the plane electrode U may draw a pseudo sine wave or a triangular wave with the elapsed time as the horizontal axis.
　〔実施形態２〕
　本実施形態以降においては、図９に示す基板Ｃに対して電着を実施するための製造装置および製造方法について説明を行う。図９は、本実施形態に係る基板Ｃの概略斜視図である。図９に示す基板Ｃは、図１に示す基板Ｃと比較して、平面電極Ｕに代えて複数の画素電極Ｅを備え、電着槽接続用電極Ｄを複数備える点においてのみ構成が異なる。 [Embodiment 2]
In and after the present embodiment, a manufacturing apparatus and a manufacturing method for performing electrodeposition on the substrate C shown in FIG. 9 will be described. FIG. 9 is a schematic perspective view of the substrate C according to this embodiment. The substrate C shown in FIG. 9 differs from the substrate C shown in FIG. 1 only in that it includes a plurality of pixel electrodes E instead of the planar electrodes U and a plurality of electrodeposition bath connection electrodes D.
　画素電極Ｅは、基板Ｃの何れか一方の面上において露出するように、基板Ｃにパターン形成されている。例えば、画素電極Ｅは、基板Ｃ上において、マトリクス状に形成されている。 The pixel electrode E is patterned on the substrate C so as to be exposed on either surface of the substrate C. For example, the pixel electrodes E are formed in a matrix on the substrate C.
　電着槽接続用電極Ｄは、基板Ｃの画素電極Ｅが形成された面上において、基板Ｃの互いに直交する何れか２辺に沿って複数形成される。個々の電着槽接続用電極Ｄに電圧を印加することにより、個々の画素電極Ｅに電圧を印加することができる。このため、基板Ｃには、各画素電極Ｅと接続する、図示しないトランジスタが複数形成されていてもよく、個々の電着槽接続用電極Ｄに電圧を印加することにより、各トランジスタを駆動し、個々の画素電極Ｅに電圧を印加してもよい。 A plurality of electrodeposition bath connection electrodes D are formed on the surface of the substrate C on which the pixel electrodes E are formed, along any two sides of the substrate C orthogonal to each other. A voltage can be applied to each pixel electrode E by applying a voltage to each electrodeposition bath connecting electrode D. For this reason, a plurality of transistors (not shown) connected to each pixel electrode E may be formed on the substrate C, and each transistor is driven by applying a voltage to each electrodeposition tank connection electrode D. A voltage may be applied to each pixel electrode E.
　画素電極Ｅおよび電着槽接続用電極Ｄは、基板Ｃの画素電極Ｅおよび電着槽接続用電極Ｄが形成された面と面一であり、当該面において露出している。 The pixel electrode E and the electrodeposition bath connection electrode D are flush with the surface of the substrate C on which the pixel electrode E and the electrodeposition bath connection electrode D are formed, and are exposed on the surface.
　本実施形態においても、基板Ｃに対する電着を、発光デバイスの製造装置２を用いて実行する。本実施形態における発光デバイスの製造装置２は、前実施形態における発光デバイスの製造装置２と同一の構成を備えていてもよい。本実施形態における、基板Ｃと電着槽４とが互いに押し付けられた状態における、図３の（ａ）および図３の（ｃ）に対応する概略図を、図１０の（ａ）および図１０の（ｂ）にそれぞれ示す。 Also in the present embodiment, electrodeposition on the substrate C is performed using the light emitting device manufacturing apparatus 2. The light emitting device manufacturing apparatus 2 in the present embodiment may have the same configuration as the light emitting device manufacturing apparatus 2 in the previous embodiment. 10A and 10 are schematic diagrams corresponding to FIGS. 3A and 3C in a state where the substrate C and the electrodeposition tank 4 are pressed against each other in the present embodiment. (B) of each.
　本実施形態においては、基板Ｃと電着槽４とが互いに押し付けられた際、電着槽４の複数の基板接続用電極２２と、基板Ｃの複数の電着槽接続用電極Ｄとのそれぞれが接触し、互いに電気的に導通する。電着電源１２は、基板接続用電極２２および電着槽接続電極Ｄを介して、基板Ｃの画素電極Ｅのそれぞれに対し、個別に電圧を印加することができる。したがって、電着電源１２は、個々の画素電極Ｅと底面電極８との間に、少なくとも２値の電圧を印加する。 In the present embodiment, when the substrate C and the electrodeposition bath 4 are pressed against each other, the plurality of substrate connection electrodes 22 of the electrodeposition bath 4 and the plurality of electrodeposition bath connection electrodes D of the substrate C are respectively Come into contact with each other and become electrically conductive with each other. The electrodeposition power source 12 can individually apply a voltage to each of the pixel electrodes E on the substrate C via the substrate connection electrode 22 and the electrodeposition bath connection electrode D. Therefore, the electrodeposition power source 12 applies at least a binary voltage between each pixel electrode E and the bottom electrode 8.
　本実施形態に係る発光デバイスの製造装置２を用いて、基板Ｃの画素電極Ｅ上に電着による成膜を実行する一例について、図１１および図１２を参照して説明する。図１１は、本実施形態に係る発光デバイスの製造装置２を用いた製造方法の一例を説明するためのフローチャートである。図１２は、図１１に示す製造方法における、発光デバイスの製造装置２および基板Ｃの工程断面図である。図１２の各図においては、本実施形態の電着工程における、電着槽４近傍の拡大側面図を示す。 An example of performing film formation by electrodeposition on the pixel electrode E of the substrate C using the light emitting device manufacturing apparatus 2 according to this embodiment will be described with reference to FIGS. 11 and 12. FIG. 11 is a flowchart for explaining an example of a manufacturing method using the light emitting device manufacturing apparatus 2 according to the present embodiment. FIG. 12 is a process cross-sectional view of the light emitting device manufacturing apparatus 2 and the substrate C in the manufacturing method shown in FIG. 12 is an enlarged side view of the vicinity of the electrodeposition tank 4 in the electrodeposition process of this embodiment.
　本実施形態において、基板Ｃは、図１２の各図に示すように、画素電極Ｅとして、第１画素電極Ｅ１と、第２画素電極Ｅ２と、第３画素電極Ｅ３とを、それぞれ複数備えている。本実施形態においては、第１画素電極Ｅ１と、第２画素電極Ｅ２と、第３画素電極Ｅ３とのそれぞれに、互いに異なる機能粒子からなる層を成膜する方法を説明する。 In the present embodiment, the substrate C includes, as pixel electrodes E, a plurality of first pixel electrodes E1, second pixel electrodes E2, and third pixel electrodes E3, as shown in the drawings of FIG. There is. In the present embodiment, a method of forming layers made of functional particles different from each other on each of the first pixel electrode E1, the second pixel electrode E2, and the third pixel electrode E3 will be described.
　本実施形態に係る発光デバイスの製造方法においては、はじめに、発光デバイスの製造装置２に基板Ｃを設置する（ステップＳ２）。ステップＳ２は、前実施形態と同様に実行される。ただし、本実施形態においては、ステップＳ２において加圧部１０に設置された基板Ｃを、電着槽４に近接させる前に、内部４Ａに電着液Ｌ１と異なる電着液Ｌ２が充填されている。 In the method for manufacturing a light emitting device according to the present embodiment, first, the substrate C is installed in the light emitting device manufacturing apparatus 2 (step S2). Step S2 is executed as in the previous embodiment. However, in the present embodiment, before the substrate C installed in the pressurizing unit 10 is brought close to the electrodeposition tank 4 in step S2, the inside 4A is filled with the electrodeposition liquid L2 different from the electrodeposition liquid L1. There is.
　電着液Ｌ２は、電着液Ｌ１の溶媒と同一の溶媒を含んでいてもよい。電着液Ｌ２は、機能粒子として、前実施形態において説明した、第１粒子Ｍ１および第２粒子Ｍ２に加えて、第３粒子Ｍ３を含む。第３粒子Ｍ３は、第１粒子Ｍ１および第２粒子Ｍ２と同様に、発光素子の機能層の材料であってもよく、半導体ナノ粒子、すなわち、量子ドットであってもよい。 The electrodeposition liquid L2 may contain the same solvent as the solvent of the electrodeposition liquid L1. The electrodeposition liquid L2 contains, as functional particles, third particles M3 in addition to the first particles M1 and the second particles M2 described in the previous embodiment. Similar to the first particles M1 and the second particles M2, the third particles M3 may be the material of the functional layer of the light emitting element, or may be semiconductor nanoparticles, that is, quantum dots.
　本実施形態においても、第３粒子Ｍ３は、第１粒子Ｍ１と第２粒子Ｍ２と同じ極性を有している。本実施形態においても、第１粒子Ｍ１と第２粒子Ｍ２とが、画素電極Ｅの何れかに吸着され、当該画素電極Ｅに成膜されるために必要な、底面電極８と画素電極Ｅとの間の閾値電圧として、それぞれ、第１閾値電圧Ｖ１と第２閾値電圧Ｖ２とを有する。また、第３粒子Ｍ３が、画素電極Ｅの何れかに吸着され、当該画素電極Ｅに成膜されるために必要な閾値電圧である、第３閾値電圧Ｖ３の絶対値は、第２閾値電圧Ｖ２の絶対値よりも大きい。 Also in this embodiment, the third particles M3 have the same polarity as the first particles M1 and the second particles M2. Also in the present embodiment, the bottom electrode 8 and the pixel electrode E, which are necessary for the first particles M1 and the second particles M2 to be adsorbed on any of the pixel electrodes E and to be deposited on the pixel electrodes E, The first threshold voltage V1 and the second threshold voltage V2 are respectively provided as the threshold voltages between the two. In addition, the absolute value of the third threshold voltage V3, which is the threshold voltage required for the third particles M3 to be adsorbed on any of the pixel electrodes E and to be formed on the pixel electrodes E, is the second threshold voltage. Greater than the absolute value of V2.
　次いで、前実施形態と同様に、加圧部１０を制御して、基板Ｃを電着槽４に押し付け、基板把持工程を実施する（ステップＳ４）。これにより、基板Ｃの画素電極Ｅは電着液Ｌ２に浸漬される。ステップＳ４に次いで、電着工程を実施する。 Next, similarly to the previous embodiment, the pressurizing unit 10 is controlled to press the substrate C against the electrodeposition tank 4, and the substrate holding step is performed (step S4). As a result, the pixel electrode E on the substrate C is immersed in the electrodeposition liquid L2. Following step S4, an electrodeposition step is performed.
　本実施形態は、電着工程において、はじめに、絶対値が、第１閾値電圧Ｖ１の絶対値以上であり、かつ、第２閾値電圧Ｖ２の絶対値未満である、第１電圧を、底面電極８と第１画素電極Ｅ１との間に印加する、第１成膜工程を実施する（ステップＳ１６）。ステップＳ１６においては、図１２の（ａ）に示すように、電着液Ｌ２に含まれる機能粒子のうち、第１粒子Ｍ１のみが第１画素電極Ｅ１に泳動し、第１画素電極Ｅ１上に吸着される。 In the present embodiment, in the electrodeposition step, first, the first voltage whose absolute value is equal to or more than the absolute value of the first threshold voltage V1 and less than the absolute value of the second threshold voltage V2 is applied to the bottom electrode 8 And a first pixel electrode E1 is applied between the first film forming step (step S16). In step S16, as shown in (a) of FIG. 12, among the functional particles contained in the electrodeposition liquid L2, only the first particles M1 migrate to the first pixel electrode E1, and the first particles M1 are deposited on the first pixel electrode E1. Adsorbed.
　ステップＳ１６における電圧印加を十分におこなうことにより、第１画素電極Ｅ１上に、図１２の（ｂ）に示す、第１粒子Ｍ１を含む第１層Ｆ１が成膜される。なお、ステップＳ１６は、電着槽４中の第１粒子Ｍ１のほぼ全てが、第１層Ｆ１の成膜のために、第１画素電極Ｅ１上に吸着されるまで実施される。 By sufficiently applying the voltage in step S16, the first layer F1 including the first particles M1 shown in FIG. 12B is formed on the first pixel electrode E1. Note that step S16 is performed until almost all of the first particles M1 in the electrodeposition tank 4 are adsorbed on the first pixel electrode E1 for forming the first layer F1.
　ここで、電着工程においては、成膜を行いたい全ての画素電極Ｅに対し、均一に電圧を印加することが困難である場合がある。特に、特定の画素電極Ｅにおいて電圧の降下が発生する場合がある。上記について、本実施形態と比較形態とを対比しつつ説明する。 Here, in the electrodeposition step, it may be difficult to apply a uniform voltage to all the pixel electrodes E on which film formation is desired. In particular, a voltage drop may occur in the specific pixel electrode E. The above will be described while comparing the present embodiment with the comparative embodiment.
　図１３の（ａ）および図１３の（ｂ）は、本実施形態に係る発光デバイスの製造装置２を用いた電着工程について説明するための工程断面図である。図１３の（ｃ）および図１３の（ｄ）は、比較形態に係る発光デバイスの製造装置を用いた電着工程について説明するための工程断面図である。 FIGS. 13A and 13B are process cross-sectional views for explaining the electrodeposition process using the light emitting device manufacturing apparatus 2 according to the present embodiment. 13C and 13D are process cross-sectional views for explaining an electrodeposition process using the light emitting device manufacturing apparatus according to the comparative embodiment.
　なお、比較形態に係る発光デバイスの製造装置は、電着槽４の代わりに、距離ｄ１よりも大きい距離ｄ２を深さとして有する、電着槽４Ｃを備える点を除いて、本実施形態に係る発光デバイスの製造装置２と同一の構成を備える。 The light emitting device manufacturing apparatus according to the comparative embodiment is related to the present embodiment, except that, instead of the electrodeposition tank 4, it is provided with an electrodeposition tank 4C having a distance d2 larger than the distance d1 as a depth. The light emitting device manufacturing apparatus 2 has the same configuration.
　ここでは、本実施形態および比較形態において、第１画素電極Ｅ１のうち、第１画素電極Ｅ１Ａに対し、第１画素電極Ｅ１Ｂに印加された電圧が、望ましい電圧よりも降下したとする。この場合、底面電極８と第１画素電極Ｅ１Ａとの間に生じる電界よりも、底面電極８と第１画素電極Ｅ１Ｂとの間に生じる電界が弱くなる。第１画素電極Ｅ１Ａと第１画素電極Ｅ１Ｂとのそれぞれに成膜される第１層Ｆ１を、それぞれ、第１層Ｆ１Ａと第１層Ｆ１Ｂとする。この場合、第１層Ｆ１Ａの成膜速度よりも、第１層Ｆ１Ｂの成膜速度が遅くなる。 Here, in the present embodiment and the comparative form, it is assumed that the voltage applied to the first pixel electrode E1B of the first pixel electrodes E1 is lower than the desired voltage with respect to the first pixel electrode E1A. In this case, the electric field generated between the bottom electrode 8 and the first pixel electrode E1B is weaker than the electric field generated between the bottom electrode 8 and the first pixel electrode E1A. The first layer F1 formed on each of the first pixel electrode E1A and the first pixel electrode E1B is referred to as a first layer F1A and a first layer F1B, respectively. In this case, the film formation rate of the first layer F1B becomes slower than the film formation rate of the first layer F1A.
　しかしながら、ある特定の画素電極Ｅの近傍に存在する第１粒子Ｍ１が、第１層Ｆ１の成膜によって減少することにより、当該画素電極Ｅに対する第１粒子Ｍ１の成膜速度は急激に低下する。ここで、上記成膜工程において、第１層Ｆ１Ａの成膜速度が比較的速いことにより、第１画素電極Ｅ１Ａの近傍の第１粒子Ｍ１は比較的素早く消費される。また、本実施形態のように、比較的短い距離ｄ１を深さとして有する電着槽４においては、電着槽４中の第１粒子Ｍ１の総量が比較的少ない。したがって、上記成膜工程においては、第１画素電極Ｅ１Ａの近傍の第１粒子Ｍ１が急速に少なくなるため、しばらく第１層Ｆ１Ａの成膜が続いた後、第１層Ｆ１Ａの成膜速度は急速に低下する。 However, the first particles M1 existing in the vicinity of a specific pixel electrode E decrease due to the film formation of the first layer F1, and the film formation rate of the first particles M1 on the pixel electrode E rapidly decreases. .. Here, in the film forming step, since the film forming rate of the first layer F1A is relatively high, the first particles M1 near the first pixel electrode E1A are consumed relatively quickly. Further, in the electrodeposition tank 4 having the depth of the relatively short distance d1 as in the present embodiment, the total amount of the first particles M1 in the electrodeposition tank 4 is relatively small. Therefore, in the film forming step, the first particles M1 in the vicinity of the first pixel electrode E1A rapidly decrease, and therefore, after the first layer F1A is continuously formed for a while, the film forming rate of the first layer F1A is Falls rapidly.
　また、第１層Ｆ１Ｂの成膜速度は比較的遅いため、第１層Ｆ１Ａの成膜速度が急速に低下した時点においても、まだ第１画素電極Ｅ１Ｂの近傍には第１粒子Ｍ１が残存している。このために、さらに時間が経過することにより、第１層Ｆ１Ｂの成膜は、第１層Ｆ１Ａの成膜が実質的に停止した後も継続する。第１層Ｆ１Ｂの成膜は、第１画素電極Ｅ１Ｂの近傍の第１粒子Ｍ１が少なくなるまで続く。 Further, since the film formation rate of the first layer F1B is relatively slow, the first particles M1 still remain in the vicinity of the first pixel electrode E1B even when the film formation rate of the first layer F1A rapidly decreases. ing. For this reason, as time further elapses, the film formation of the first layer F1B continues even after the film formation of the first layer F1A is substantially stopped. The film formation of the first layer F1B continues until the amount of the first particles M1 near the first pixel electrode E1B decreases.
　第１粒子Ｍ１が電着液Ｌ２において略均等に分散しているとすると、各画素電極近傍における第１粒子Ｍ１の総量は略同一である。すなわち、成膜に十分に時間をかけた場合、第１層Ｆ１Ａと第１層Ｆ１Ｂとに含まれる第１粒子Ｍ１の量は、実質的に同一となる。したがって、図１３の（ｂ）に示すように、第１層Ｆ１Ａと第１層Ｆ１Ｂとの膜厚をそれぞれ、膜厚ｄＦ１と膜厚ｄＦ２とおくと、膜厚ｄＦ１と膜厚ｄＦ２とは略同一の膜厚となる。 Assuming that the first particles M1 are substantially evenly dispersed in the electrodeposition liquid L2, the total amount of the first particles M1 near each pixel electrode is substantially the same. That is, when the film formation takes a sufficient time, the amounts of the first particles M1 contained in the first layer F1A and the first layer F1B become substantially the same. Therefore, as shown in FIG. 13B, when the film thicknesses of the first layer F1A and the first layer F1B are set to the film thickness dF1 and the film thickness dF2, respectively, the film thickness dF1 and the film thickness dF2 are substantially the same. The film thickness is the same.
　ゆえに、本実施形態に係る発光デバイスの製造装置２は、各画素電極Ｅに対する電圧印加を行った際、特定の画素電極Ｅにおいて電圧降下等が発生した場合においても、各画素電極Ｅに成膜された層の膜厚差を低減できる。 Therefore, the light emitting device manufacturing apparatus 2 according to the present embodiment forms a film on each pixel electrode E even when a voltage drop occurs in a specific pixel electrode E when a voltage is applied to each pixel electrode E. The difference in film thickness between the formed layers can be reduced.
　一方、比較形態のように、比較的長い距離ｄ２を深さとして有する電着槽４Ｃにおいては、電着槽４Ｃ中の第１粒子Ｍ１の総量が比較的多くなる。このために、しばらく第１層Ｆ１Ａの成膜が続いた後であっても、第１画素電極Ｅ１Ａの近傍の比較的多くの第１粒子Ｍ１が残存している。このため、第１層Ｆ１Ａの成膜速度は比較的長時間低下せず、継続して第１層Ｆ１Ａの成膜が実施される。したがって、比較形態においては、電圧を印加している間、第１画素電極Ｅ１Ｂのみならず、第１画素電極Ｅ１Ａにおいても成膜が継続することとなる。 On the other hand, in the electrodeposition tank 4C having a relatively long distance d2 as the depth as in the comparative embodiment, the total amount of the first particles M1 in the electrodeposition tank 4C becomes relatively large. Therefore, even after the first layer F1A has been formed for a while, a relatively large number of first particles M1 near the first pixel electrode E1A remain. Therefore, the film formation rate of the first layer F1A does not decrease for a relatively long time, and the film formation of the first layer F1A is continuously performed. Therefore, in the comparative embodiment, film formation is continued not only on the first pixel electrode E1B but also on the first pixel electrode E1A while the voltage is being applied.
　ゆえに、第１層Ｆ１Ｂと比較して、成膜速度が速い第１層Ｆ１Ａが急速に成膜されることにより、第１層Ｆ１Ａの膜厚が第１層Ｆ１Ｂの膜厚と比較して厚くなる。すなわち、図１３の（ｄ）に示すように、第１層Ｆ１Ａと第１層Ｆ１Ｂとの膜厚をそれぞれ、膜厚ｄＦＡと膜厚ｄＦＢとおくと、膜厚ｄＦＡは膜厚ｄＦＢよりも厚くなる。 Therefore, the film thickness of the first layer F1A is larger than that of the first layer F1B due to the rapid film formation of the first layer F1A having a higher film formation rate than that of the first layer F1B. Become. That is, as shown in (d) of FIG. 13, when the film thicknesses of the first layer F1A and the first layer F1B are respectively set to the film thickness dFA and the film thickness dFB, the film thickness dFA is larger than the film thickness dFB. Become.
　このため、第１層Ｆ１Ａの膜厚が目標とする第１層Ｆ１の膜厚に到達した時点において電圧印加を解除した場合、第１層Ｆ１Ｂの膜厚が目標とする第１層Ｆ１の膜厚よりも薄くなる。加えて、第１層Ｆ１Ｂとして成膜されなかった、第１画素電極Ｅ１Ｂ近傍の第１粒子Ｍ１が比較的多く残存することとなる。このため、後工程において、第２画素電極Ｅ２または第３画素電極Ｅ３に、残存していた第１粒子Ｍ１が成膜される場合がある。 Therefore, when the voltage application is released when the film thickness of the first layer F1A reaches the target film thickness of the first layer F1, the film thickness of the first layer F1B is the target film thickness of the first layer F1B. It becomes thinner than the thickness. In addition, a relatively large amount of the first particles M1 in the vicinity of the first pixel electrode E1B, which were not formed as the first layer F1B, remain. Therefore, the remaining first particles M1 may be formed on the second pixel electrode E2 or the third pixel electrode E3 in a later step.
　本実施形態の成膜工程においては、電着槽４の深さに相当する距離ｄ１を適切に設計し、第１粒子Ｍ１が全て消費された場合に、第１層Ｆ１の膜厚が目標の膜厚となるように設計すればよい。これにより、第１成膜工程の完了後、電着液Ｌ２中の第１粒子Ｍ１がほぼ全て消費されるため、上述した膜厚差を低減することが可能である。 In the film forming process of the present embodiment, the distance d1 corresponding to the depth of the electrodeposition tank 4 is appropriately designed, and when the first particles M1 are all consumed, the target film thickness of the first layer F1 is set. It may be designed to have a film thickness. As a result, after the completion of the first film forming step, almost all of the first particles M1 in the electrodeposition liquid L2 are consumed, so that the above-mentioned film thickness difference can be reduced.
　ステップＳ１６に次いで、絶対値が、第２閾値電圧Ｖ２の絶対値以上であり、かつ、第３閾値電圧Ｖ３の絶対値未満である、第２電圧を、底面電極８と第２画素電極Ｅ２との間に印加する、第２成膜工程を実施する（ステップＳ１８）。ステップＳ１８においては、図１２の（ｃ）に示すように、第２粒子Ｍ２と第３粒子Ｍ３のうち、第２粒子Ｍ２のみが第２画素電極Ｅ２に泳動し、第２画素電極Ｅ２上に吸着される。ステップＳ１８における電圧印加を十分におこなうことにより、第２画素電極Ｅ２上に、図１２の（ｄ）に示す、第２粒子Ｍ２を含む第２層Ｆ２が成膜される。 Subsequent to step S16, a second voltage whose absolute value is greater than or equal to the absolute value of the second threshold voltage V2 and less than the absolute value of the third threshold voltage V3 is applied to the bottom electrode 8 and the second pixel electrode E2. The second film forming process is applied during this period (step S18). In step S18, as shown in FIG. 12C, of the second particles M2 and the third particles M3, only the second particles M2 migrate to the second pixel electrode E2, and then on the second pixel electrode E2. Adsorbed. By sufficiently applying the voltage in step S18, the second layer F2 including the second particles M2 shown in FIG. 12D is formed on the second pixel electrode E2.
　ステップＳ１６において、電着槽４中の第１粒子Ｍ１はほぼ全て消費されているため、ステップＳ１８において、第２層Ｆ２中に第１粒子Ｍ１が混在することを低減できる。なお、第２層Ｆ２中の第１粒子Ｍ１の密度が、最終的な発光デバイスとしての不良の基準を下回る限りは、第２層Ｆ２に微量の第１粒子Ｍ１が含まれていてもよい。したがって、本実施形態においては、ステップＳ１８において、微量の第１粒子Ｍ１が電着槽４中に含まれていてもよい。 Since almost all the first particles M1 in the electrodeposition tank 4 are consumed in step S16, it is possible to reduce the mixing of the first particles M1 in the second layer F2 in step S18. The second layer F2 may contain a small amount of the first particles M1 as long as the density of the first particles M1 in the second layer F2 is lower than the standard of the defect as a final light emitting device. Therefore, in the present embodiment, a slight amount of the first particles M1 may be included in the electrodeposition tank 4 in step S18.
　ステップＳ１８に次いで、絶対値が、第３閾値電圧Ｖ３の絶対値以上である、第３電圧を、底面電極８と第３画素電極Ｅ３との間に印加する、第３成膜工程を実施する（ステップＳ２０）。ステップＳ２０においては、図１２の（ｅ）に示すように、第３粒子Ｍ３が第３画素電極Ｅ３に泳動し、第３画素電極Ｅ３上に吸着される。ステップＳ２０における電圧印加を十分におこなうことにより、第３画素電極Ｅ３上に、図１２の（ｆ）に示す、第３粒子Ｍ３を含む第３層Ｆ３が成膜される。 Subsequent to step S18, a third film forming step of applying a third voltage whose absolute value is equal to or more than the absolute value of the third threshold voltage V3 between the bottom electrode 8 and the third pixel electrode E3 is performed. (Step S20). In step S20, as shown in (e) of FIG. 12, the third particles M3 migrate to the third pixel electrode E3 and are adsorbed on the third pixel electrode E3. By sufficiently applying the voltage in step S20, the third layer F3 including the third particles M3 shown in FIG. 12F is formed on the third pixel electrode E3.
　ステップＳ１６およびステップＳ１８において、電着槽４中の第１粒子Ｍ１および第２粒子Ｍ２はほぼ全て消費されているため、ステップＳ２０において、第３層Ｆ３中に第１粒子Ｍ１または第２粒子Ｍ２が混在することを低減できる。なお、第３層Ｆ３中の第１粒子Ｍ１および第２粒子Ｍ２のそれぞれ密度が、最終的な発光デバイスとしての不良の基準を下回る限りは、第３層Ｆ３に微量の第１粒子Ｍ１または第２粒子Ｍ２が含まれていてもよい。したがって、本実施形態においては、ステップＳ２０において、微量の第１粒子Ｍ１または第２粒子Ｍ２が電着槽４中に含まれていてもよい。 In step S16 and step S18, the first particles M1 and the second particles M2 in the electrodeposition tank 4 are almost completely consumed. Therefore, in step S20, the first particles M1 or the second particles M2 are contained in the third layer F3. Can be reduced. In addition, as long as the respective densities of the first particles M1 and the second particles M2 in the third layer F3 are lower than the standard of defectiveness as a final light emitting device, a small amount of the first particles M1 or the second particles M1 in the third layer F3 or Two particles M2 may be included. Therefore, in the present embodiment, a slight amount of the first particles M1 or the second particles M2 may be included in the electrodeposition tank 4 in step S20.
　次いで、底面電極８と画素電極Ｅとの間の電圧印加を解除し（ステップＳ２２）、電着工程を完了する。次いで、上述したステップＳ１２およびステップＳ１４を、前実施形態と同様に実施する。これにより、第１画素電極Ｅ１と第２画素電極Ｅ２と第３画素電極Ｅ３との上層に、第１層Ｆ１と第２層Ｆ２と第３層Ｆ３とをそれぞれ備えた基板Ｃを得る。この後、第１層Ｆ１と第２層Ｆ２と第３層Ｆ３との上層に、対向基板等を形成することにより、発光デバイスを製造してもよい。 Next, the voltage application between the bottom electrode 8 and the pixel electrode E is released (step S22), and the electrodeposition process is completed. Then, step S12 and step S14 described above are performed in the same manner as in the previous embodiment. As a result, a substrate C including the first layer F1, the second layer F2, and the third layer F3 on the first pixel electrode E1, the second pixel electrode E2, and the third pixel electrode E3 is obtained. After that, a light emitting device may be manufactured by forming a counter substrate or the like on the first layer F1, the second layer F2, and the third layer F3.
　本実施形態においては、底面電極８との間に第１電圧を印加する電極である第１基板電極が第１画素電極Ｅ１であり、底面電極８との間に第２電圧を印加する電極である第２基板電極が第２画素電極Ｅ２である。すなわち、第１基板電極と第２基板電極とが互いに異なる。本実施形態によれば、互いに異なる機能材料をそれぞれ含む複数の層を、第１画素電極Ｅ１上と第２電極Ｅ２上にそれぞれ個別に形成することができる。特に、本実施形態においては、第１画素電極Ｅ１上に第１粒子Ｍ１を含む第１層Ｆ１を、第２画素電極Ｅ２上に第２粒子Ｍ２を含む第２層Ｆ２を、それぞれ個別に形成できる。 In the present embodiment, the first substrate electrode, which is the electrode that applies the first voltage to the bottom electrode 8, is the first pixel electrode E1, and the electrode that applies the second voltage to the bottom electrode 8. A certain second substrate electrode is the second pixel electrode E2. That is, the first substrate electrode and the second substrate electrode are different from each other. According to this embodiment, it is possible to individually form a plurality of layers each containing a different functional material on the first pixel electrode E1 and the second electrode E2. Particularly, in the present embodiment, the first layer F1 containing the first particles M1 is formed on the first pixel electrode E1, and the second layer F2 containing the second particles M2 is formed on the second pixel electrode E2, respectively. it can.
　さらに、本実施形態においては、底面電極８との間に第３電圧を印加する電極である第３基板電極が、第１画素電極Ｅ１および第２画素電極Ｅ２と異なる第３画素電極Ｅ３である。したがって、本実施形態においては、第３画素電極Ｅ３上に第３粒子Ｍ３を含む第３層Ｆ３を、第１層Ｆ１および第２層Ｆ２とは独立して個別に形成できる。 Furthermore, in the present embodiment, the third substrate electrode that is an electrode that applies the third voltage between the bottom electrode 8 and the bottom electrode 8 is the third pixel electrode E3 that is different from the first pixel electrode E1 and the second pixel electrode E2. .. Therefore, in the present embodiment, the third layer F3 containing the third particles M3 can be separately formed on the third pixel electrode E3 independently of the first layer F1 and the second layer F2.
　本実施形態において、例えば、第１粒子Ｍ１と第２粒子Ｍ２と第３粒子Ｍ３とが、それぞれ、青色光と緑色光と赤色光とを発する量子ドットであってもよい。当該構成により、複数のサブ画素のそれぞれに、青色光と緑色光と赤色光とをそれぞれ発する発光素子を備えた発光デバイスを製造できる。また、当該構成は、青色光を発する量子ドットと、緑色光を発する量子ドットと、赤色光を発する量子ドットとを、この順に画素電極Ｅに電着するため、下記の点において好ましい。 In the present embodiment, for example, the first particles M1, the second particles M2, and the third particles M3 may be quantum dots that emit blue light, green light, and red light, respectively. With this structure, it is possible to manufacture a light emitting device including a light emitting element that emits blue light, green light, and red light in each of the plurality of sub-pixels. In addition, this configuration is preferable in the following points because the quantum dots emitting blue light, the quantum dots emitting green light, and the quantum dots emitting red light are electrodeposited on the pixel electrode E in this order.
　一般に、量子ドットが発する光の波長は、当該量子ドットの径が小さいほど長波長となる。さらに、量子ドットの径が小さいほど、当該量子ドットは凝集しやすくなる傾向にある。このため、青色光を発する量子ドットは、緑色光および赤色光をそれぞれ発する量子ドットと比較して、より凝集しやすい傾向にある。さらに、同じ強度の電界下においては、凝集しやすい粒子ほど、電着による電極への吸着が生じやすい。 Generally speaking, the wavelength of light emitted by a quantum dot becomes longer as the diameter of the quantum dot becomes smaller. Furthermore, the smaller the quantum dot diameter, the more likely the quantum dot is to aggregate. Therefore, the quantum dots that emit blue light tend to aggregate more easily than the quantum dots that emit green light and red light, respectively. Furthermore, under the electric field of the same strength, particles that are more likely to aggregate are more likely to be adsorbed on the electrode by electrodeposition.
　したがって、青色光を発する量子ドットは、緑色光および赤色光をそれぞれ発する量子ドットと比較して、電着による電極への吸着が生じるために必要な閾値電圧が低い傾向にある。同様に、緑色光を発する量子ドットは、赤色光を発する量子ドットと比較して、電着による電極への吸着が生じるために必要な閾値電圧が低い傾向にある。 Therefore, the quantum dots that emit blue light tend to have a lower threshold voltage as compared with the quantum dots that emit green light and red light, respectively, because adsorption to the electrode by electrodeposition occurs. Similarly, a quantum dot that emits green light tends to have a lower threshold voltage required for adsorption to an electrode due to electrodeposition, as compared with a quantum dot that emits red light.
　ゆえに、本実施形態においては、青色光を発する量子ドットを、緑色光および赤色光をそれぞれ発する量子ドットよりも先に電着することが好ましい。当該構成により、青色光を発する量子ドットを電着する工程よりも後の工程において、青色光を発する量子ドットが他の量子ドットを含む層に混入することを、より効率的に低減できる。 Therefore, in the present embodiment, it is preferable to electrodeposit the quantum dots emitting blue light before the quantum dots emitting green light and red light respectively. With this configuration, it is possible to more efficiently reduce mixing of the quantum dots emitting blue light into a layer including other quantum dots in a step subsequent to the step of electrodepositing the quantum dots emitting blue light.
　同様に、本実施形態においては、緑色光を発する量子ドットを、赤色光を発する量子ドットよりも先に電着することが好ましい。当該構成により、緑色光を発する量子ドットを電着する工程よりも後の工程において、緑色光を発する量子ドットが赤色を発する量子ドットを含む層に混入することを、より効率的に低減できる。 Similarly, in the present embodiment, it is preferable that the quantum dots that emit green light be electrodeposited before the quantum dots that emit red light. With this configuration, it is possible to more efficiently reduce the mixing of the quantum dots emitting green light into the layer including the quantum dots emitting red light in a step subsequent to the step of electrodepositing the quantum dots emitting green light.
　また、一般に、量子ドットが発する光の波長が短いほど、当該量子ドットを発光させるために必要な電圧は大きい。そのため、発光波長の長い画素における、より発光波長が短い量子ドットの混入許容量と比べて、発光波長の短い画素における、より発光波長が長い量子ドットの混入許容量は少ない。加えて、本実施形態においては、ある電着工程において、意図せず電着されてしまう主な量子ドットは、当該電着工程の前の電着工程において、消費されずに電着槽４内に残存した量子ドットである。 Also, generally, the shorter the wavelength of light emitted by a quantum dot, the greater the voltage required to cause the quantum dot to emit light. Therefore, as compared with the admissible amount of quantum dots having a shorter emission wavelength in a pixel having a longer emission wavelength, the admissible amount of quantum dots having a longer emission wavelength is smaller in a pixel having a shorter emission wavelength. In addition, in the present embodiment, the main quantum dots that are unintentionally electrodeposited in a certain electrodeposition process are not consumed in the electrodeposition process before the electrodeposition process and are not consumed in the electrodeposition tank 4. It is the quantum dot that remained in.
　つまり、青色光、緑色光、および赤色光をそれぞれ発する量子ドットを、この順において電着する場合、ある電着工程において意図せず混入してしまう主な量子ドットは、電着したい量子ドットが発する光の波長よりも短い波長の光を発する量子ドットとなる。したがって、本実施形態においては、青色光、緑色光、および赤色光をそれぞれ発する量子ドットを、この順において電着することにより、意図せず電着されてしまう量子ドットの混入量が、許容量を上回ることを、より効率よく低減できる。 That is, when quantum dots emitting blue light, green light, and red light, respectively, are electrodeposited in this order, the main quantum dots that are unintentionally mixed in a certain electrodeposition process are the quantum dots to be electrodeposited. The quantum dots emit light of a wavelength shorter than the wavelength of the emitted light. Therefore, in the present embodiment, the quantum dots that emit blue light, green light, and red light, respectively, are electrodeposited in this order, and the mixing amount of the quantum dots that are unintentionally electrodeposited is an allowable amount. Can be reduced more efficiently.
　〔実施形態３〕
　図１４は、本実施形態に係る発光デバイスの製造装置２を用いた製造方法の一例を説明するためのフローチャートである。図１５は、図１４に示す製造方法における、発光デバイスの製造装置２および基板Ｃの工程断面図である。図１５の各図においては、本実施形態の電着工程における、電着槽４近傍の拡大側面図を示す。本実施形態に係る発光デバイスの製造装置２を用いて、基板Ｃの画素電極Ｅ上に電着による成膜を実行する一例について、図１４および図１５を参照して説明する。 [Embodiment 3]
FIG. 14 is a flowchart for explaining an example of a manufacturing method using the light emitting device manufacturing apparatus 2 according to the present embodiment. FIG. 15 is a process cross-sectional view of the light emitting device manufacturing apparatus 2 and the substrate C in the manufacturing method shown in FIG. In each figure of FIG. 15, an enlarged side view of the vicinity of the electrodeposition tank 4 in the electrodeposition step of the present embodiment is shown. An example of performing film formation by electrodeposition on the pixel electrode E of the substrate C using the light emitting device manufacturing apparatus 2 according to this embodiment will be described with reference to FIGS. 14 and 15.
　本実施形態における、発光デバイスの製造装置２および基板Ｃは、前実施形態における発光デバイスの製造装置２および基板Ｃと、それぞれ同一の構成を備えている。 The light emitting device manufacturing apparatus 2 and the substrate C in the present embodiment have the same configurations as the light emitting device manufacturing apparatus 2 and the substrate C in the previous embodiment, respectively.
　本実施形態に係る発光デバイスの製造方法においては、はじめに、発光デバイスの製造装置２に基板Ｃを設置する（ステップＳ２）。ステップＳ２は、前実施形態と同様に実行される。ただし、本実施形態においては、ステップＳ２において加圧部１０に設置された基板Ｃを、電着槽４に近接させる前に、内部４Ａに電着液Ｌ１および電着液Ｌ２と異なる電着液Ｌ３が充填されている。 In the method for manufacturing a light emitting device according to the present embodiment, first, the substrate C is installed in the light emitting device manufacturing apparatus 2 (step S2). Step S2 is executed as in the previous embodiment. However, in the present embodiment, before the substrate C installed in the pressurizing unit 10 in step S2 is brought close to the electrodeposition tank 4, the electrodeposition liquid L1 and the electrodeposition liquid L2 different from the electrodeposition liquid L1 are provided in the interior 4A. It is filled with L3.
　電着液Ｌ３は、電着液Ｌ１および電着液Ｌ２の溶媒と同一の溶媒を含んでいてもよい。電着液Ｌ３は、機能粒子として、前実施形態において説明した、第１粒子Ｍ１、第２粒子Ｍ２、および第３粒子Ｍ３に加えて、第４粒子Ｍ４および第５粒子Ｍ５を含む。第４粒子Ｍ４および第５粒子Ｍ５は、第１粒子Ｍ１、第２粒子Ｍ２、および第３粒子Ｍ３と同様に、発光素子の機能層の材料であってもよく、半導体ナノ粒子、すなわち、量子ドットであってもよい。 The electrodeposition liquid L3 may contain the same solvent as the solvent of the electrodeposition liquid L1 and the electrodeposition liquid L2. The electrodeposition liquid L3 contains, as functional particles, fourth particles M4 and fifth particles M5 in addition to the first particles M1, the second particles M2, and the third particles M3 described in the above embodiment. The fourth particles M4 and the fifth particles M5 may be the material of the functional layer of the light emitting device, like the first particles M1, the second particles M2, and the third particles M3. It may be a dot.
　本実施形態においても、第４粒子Ｍ４および第５粒子Ｍ５は、第１粒子Ｍ１、第２粒子Ｍ２、および第３粒子Ｍ３と同じ極性を有している。本実施形態においても、第１粒子Ｍ１、第２粒子Ｍ２、および第３粒子Ｍ３が、底面電極８と画素電極Ｅとの間の閾値電圧として、それぞれ、第１閾値電圧Ｖ１、第２閾値電圧Ｖ２、および第３閾値電圧Ｖ３を有する。また、第４粒子Ｍ４が、画素電極Ｅの何れかに吸着され、当該画素電極Ｅに成膜されるために必要な閾値電圧である、第４閾値電圧Ｖ４の絶対値は、第１閾値電圧Ｖ１の絶対値よりも小さい。加えて、第５粒子Ｍ５が、画素電極Ｅの何れかに吸着され、当該画素電極Ｅに成膜されるために必要な閾値電圧である、第５閾値電圧Ｖ５の絶対値は、第３閾値電圧Ｖ３の絶対値よりも大きい。 Also in this embodiment, the fourth particles M4 and the fifth particles M5 have the same polarity as the first particles M1, the second particles M2, and the third particles M3. Also in the present embodiment, the first particles M1, the second particles M2, and the third particles M3 are the first threshold voltage V1 and the second threshold voltage, respectively, as the threshold voltages between the bottom electrode 8 and the pixel electrode E. V2 and a third threshold voltage V3. Further, the absolute value of the fourth threshold voltage V4, which is the threshold voltage required for the fourth particles M4 to be adsorbed on any of the pixel electrodes E and to be formed on the pixel electrodes E, is the first threshold voltage. It is smaller than the absolute value of V1. In addition, the absolute value of the fifth threshold voltage V5, which is the threshold voltage required for the fifth particles M5 to be adsorbed on any of the pixel electrodes E and to be formed on the pixel electrodes E, is the third threshold. It is larger than the absolute value of the voltage V3.
　次いで、前実施形態と同様に、加圧部１０を制御して、基板Ｃを電着槽４に押し付け、基板把持工程を実施する（ステップＳ４）。これにより、基板Ｃの画素電極Ｅは電着液Ｌ３に浸漬される。ステップＳ４に次いで、電着工程を実施する。 Next, similarly to the previous embodiment, the pressurizing unit 10 is controlled to press the substrate C against the electrodeposition tank 4, and the substrate holding step is performed (step S4). As a result, the pixel electrode E on the substrate C is immersed in the electrodeposition liquid L3. Following step S4, an electrodeposition step is performed.
　本実施形態は、電着工程において、はじめに、絶対値が、第４閾値電圧Ｖ４の絶対値以上であり、かつ、第１閾値電圧Ｖ１の絶対値未満である、第４電圧を、底面電極８と全ての画素電極Ｅとの間に印加する、第４成膜工程を実施する（ステップＳ２４）。ステップＳ２４においては、図１５の（ａ）に示すように、電着液Ｌ３に含まれる機能粒子のうち、第４粒子Ｍ４のみが画素電極Ｅのそれぞれに泳動し、画素電極Ｅ上に吸着される。 In the present embodiment, in the electrodeposition process, first, a fourth voltage whose absolute value is equal to or more than the absolute value of the fourth threshold voltage V4 and less than the absolute value of the first threshold voltage V1 is applied to the bottom electrode 8 And a fourth film forming step of applying the voltage between all the pixel electrodes E (step S24). In step S24, as shown in FIG. 15A, among the functional particles contained in the electrodeposition liquid L3, only the fourth particles M4 migrate to each of the pixel electrodes E and are adsorbed on the pixel electrodes E. It
　ステップＳ２４における電圧印加を十分におこなうことにより、全ての画素電極Ｅ上に、図１５の（ｂ）に示す、第４粒子Ｍ４を含む第４層Ｆ４が成膜される。なお、ステップＳ２４は、電着槽４中の第４粒子Ｍ４のほぼ全てが、第４層Ｆ４の成膜のために、画素電極Ｅ上に吸着されるまで実施される。 By sufficiently applying the voltage in step S24, the fourth layer F4 including the fourth particles M4 shown in FIG. 15B is formed on all the pixel electrodes E. Note that step S24 is performed until almost all of the fourth particles M4 in the electrodeposition tank 4 are adsorbed on the pixel electrode E for forming the fourth layer F4.
　次いで、前実施形態と同一の手法により、ステップＳ１６と、ステップＳ１８と、ステップＳ２０とを実行する。図１５の（ｃ）は、ステップＳ１６において、第１画素電極Ｅ１と底面電極８との間に、第１電圧を印加している様子を示す。ここで、本実施形態においては、ステップＳ１６において、第１画素電極Ｅ１と重畳する位置における第４層Ｆ４が、第１粒子Ｍ１を吸着する。 Then, step S16, step S18, and step S20 are executed by the same method as in the previous embodiment. FIG. 15C shows a state in which the first voltage is applied between the first pixel electrode E1 and the bottom electrode 8 in step S16. Here, in the present embodiment, in step S16, the fourth layer F4 at the position overlapping the first pixel electrode E1 adsorbs the first particles M1.
　本実施形態における、ステップＳ１６と、ステップＳ１８と、ステップＳ２０とを実行することにより、図１５の（ｄ）に示すように、第１層Ｆ１と、第２層Ｆ２と、第３層Ｆ３とが得られる。ここで、第１層Ｆ１は、第１画素電極Ｅ１と重畳する位置における第４層Ｆ４上に形成される。また、第２層Ｆ２は、第２画素電極Ｅ２と重畳する位置における第４層Ｆ４上に形成される。さらに、第３層Ｆ３は、第３画素電極Ｅ３と重畳する位置における第４層Ｆ４上に形成される。 By executing step S16, step S18, and step S20 in the present embodiment, as shown in FIG. 15D, the first layer F1, the second layer F2, and the third layer F3 are formed. Is obtained. Here, the first layer F1 is formed on the fourth layer F4 at a position overlapping with the first pixel electrode E1. In addition, the second layer F2 is formed on the fourth layer F4 at a position overlapping with the second pixel electrode E2. Further, the third layer F3 is formed on the fourth layer F4 at a position overlapping with the third pixel electrode E3.
　ステップＳ２４において、電着槽４中の第１粒子Ｍ１はほぼ全て消費されているため、ステップＳ１６、ステップＳ１８、およびステップＳ２０のそれぞれにおいて、第１層Ｆ１中、第２層Ｆ２中、および第３層Ｆ３中に第４粒子Ｍ４が混在することを低減できる。なお、第１層Ｆ１中、第２層Ｆ２中、または第３層Ｆ３中の第４粒子Ｍ４の密度が、最終的な発光デバイスとしての不良の基準を下回る限りは、第１層Ｆ１中、第２層Ｆ２中、または第３層Ｆ３中に微量の第４粒子Ｍ４が含まれていてもよい。したがって、本実施形態においては、ステップＳ１６と、ステップＳ１８と、ステップＳ２０とのそれぞれにおいて、微量の第４粒子Ｍ４が電着槽４中に含まれていてもよい。 In step S24, almost all of the first particles M1 in the electrodeposition tank 4 are consumed, so in step S16, step S18, and step S20, respectively, in the first layer F1, the second layer F2, and the second layer F2. Mixing of the fourth particles M4 in the three-layer F3 can be reduced. In addition, as long as the density of the fourth particles M4 in the first layer F1, the second layer F2, or the third layer F3 is lower than the standard of the defect as a final light emitting device, A minute amount of the fourth particles M4 may be included in the second layer F2 or the third layer F3. Therefore, in the present embodiment, a small amount of the fourth particles M4 may be included in the electrodeposition tank 4 in each of step S16, step S18, and step S20.
　ステップＳ２０に次いで、絶対値が、第５閾値電圧Ｖ５の絶対値以上である、第５電圧を、底面電極８と全ての画素電極Ｅとの間に印加する、第５成膜工程を実施する（ステップＳ２６）。ステップＳ２６においては、図１５の（ｅ）に示すように、第５粒子Ｍ５が第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３のそれぞれに泳動し、吸着される。ステップＳ２６における電圧印加を十分におこなうことにより、第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３のそれぞれの上層に、図１５の（ｆ）に示す、第５粒子Ｍ５を含む第５層Ｆ５が成膜される。 Subsequent to step S20, a fifth film forming step of applying a fifth voltage whose absolute value is equal to or more than the absolute value of the fifth threshold voltage V5 between the bottom electrode 8 and all the pixel electrodes E is performed. (Step S26). In step S26, as shown in (e) of FIG. 15, the fifth particles M5 migrate to and are adsorbed on each of the first layer F1, the second layer F2, and the third layer F3. By sufficiently performing the voltage application in step S26, the fifth layer M5 shown in (f) of FIG. 15 is formed on each of the first layer F1, the second layer F2, and the third layer F3. The layer F5 is deposited.
　ステップＳ２６以前において、電着槽４中の第５粒子Ｍ５を除く機能粒子はほぼ全て消費されているため、ステップＳ２６において、第５層Ｆ５中に第５粒子Ｍ５を除く機能粒子が混在することを低減できる。なお、第５層Ｆ５中の第５粒子Ｍ５を除く機能粒子の密度が、最終的な発光デバイスとしての不良の基準を下回る限りは、第５層Ｆ５に、第５粒子Ｍ５を除く機能粒子が、微量に含まれていてもよい。したがって、本実施形態においては、ステップＳ２６において、第５粒子Ｍ５を除く機能粒子が、微量に電着槽４中に含まれていてもよい。 Before step S26, almost all the functional particles other than the fifth particles M5 in the electrodeposition tank 4 are consumed, so that the functional particles other than the fifth particles M5 are mixed in the fifth layer F5 in step S26. Can be reduced. In addition, as long as the density of the functional particles excluding the fifth particles M5 in the fifth layer F5 is lower than the standard of the defect as a final light emitting device, the functional particles excluding the fifth particles M5 are included in the fifth layer F5. , May be contained in a very small amount. Therefore, in the present embodiment, a small amount of functional particles other than the fifth particles M5 may be included in the electrodeposition tank 4 in step S26.
　次いで、底面電極８と画素電極Ｅとの間の電圧印加を解除し（ステップＳ２２）、電着工程を完了する。次いで、上述したステップＳ１２およびステップＳ１４を、前実施形態と同様に実施する。これにより、画素電極Ｅ上に、第４層Ｆ４と、第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３と、第５層Ｆ５とを、この順に積層して備えた基板Ｃを得る。 Next, the voltage application between the bottom electrode 8 and the pixel electrode E is released (step S22), and the electrodeposition process is completed. Then, step S12 and step S14 described above are performed in the same manner as in the previous embodiment. As a result, the substrate C is obtained by stacking the fourth layer F4, the first layer F1, the second layer F2, the third layer F3, and the fifth layer F5 on the pixel electrode E in this order. ..
　本実施形態におけるにおいて得られた基板Ｃを備える発光デバイスの例を、図１６を参照して説明する。図１６の各図は、本実施形態における発光デバイスＬＤの断側面図である。図１６の（ａ）に示す発光デバイスＬＤは、上述の基板Ｃの第５層Ｆ５の上層に、対向基板ＣＣを形成することにより得られる。 An example of a light emitting device including the substrate C obtained in the present embodiment will be described with reference to FIG. Each drawing of FIG. 16 is a sectional side view of the light emitting device LD according to the present embodiment. The light emitting device LD shown in FIG. 16A is obtained by forming the counter substrate CC on the fifth layer F5 of the substrate C described above.
　対向基板ＣＣは、基板電極として、単一の共通電極ＣＥを備えている。共通電極ＣＥは、対向基板ＣＣの何れか一方の面上において露出するように、対向基板ＣＣに形成されている。 The counter substrate CC has a single common electrode CE as a substrate electrode. The common electrode CE is formed on the counter substrate CC so as to be exposed on one surface of the counter substrate CC.
　発光デバイスＬＤにおいて、対向基板ＣＣと、共通電極ＣＥとは、基板Ｃの第４層Ｆ４から第５層Ｆ５までを介して互いに対向する。ここで、共通電極ＣＥは、基板Ｃの全ての画素電極Ｅと重畳し、全ての第５層Ｆ５と接触している。なお、図１６の各図に示す発光デバイスＬＤの構成は、本実施形態における一例である。代わりに、例えば、発光デバイスＬＤにおいて、共通電極ＣＥは、基板Ｃ上に電着された層の上層（例えば、第５層の上層）に、直接設けられていてもよい。この他、例えば、発光デバイスＬＤにおいて、対向基板ＣＣの代わりに、共通電極ＣＥ、および、当該共通電極ＣＥとの間に空隙を保って保持される封止用ガラスが、基板Ｃ上に電着された層の上層に設けられていてもよい。 In the light emitting device LD, the counter substrate CC and the common electrode CE face each other via the fourth layer F4 to the fifth layer F5 of the substrate C. Here, the common electrode CE overlaps all the pixel electrodes E on the substrate C and is in contact with all the fifth layers F5. The configuration of the light emitting device LD shown in each drawing of FIG. 16 is an example in this embodiment. Alternatively, for example, in the light emitting device LD, the common electrode CE may be directly provided on the upper layer of the layer electrodeposited on the substrate C (for example, the upper layer of the fifth layer). In addition to this, for example, in the light emitting device LD, instead of the counter substrate CC, the common electrode CE and the sealing glass held with a space between the common electrode CE and the common electrode CE are electrodeposited on the substrate C. It may be provided on the upper layer of the layer.
　発光デバイスＬＤにおいて、第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３は、それぞれ、青色発光層、緑色発光層、および赤色発光層であってもよい。また、第４層Ｆ４および第５層Ｆ５のそれぞれは、正孔輸送層または電子輸送層であってもよい。 In the light emitting device LD, the first layer F1, the second layer F2, and the third layer F3 may be a blue light emitting layer, a green light emitting layer, and a red light emitting layer, respectively. Further, each of the fourth layer F4 and the fifth layer F5 may be a hole transport layer or an electron transport layer.
　この場合、発光デバイスＬＤは、基板Ｃと対向基板ＣＣとの間において、第１層Ｆ１と重畳する位置に青色発光素子を、第２層Ｆ２と重畳する位置に緑色発光素子を、第３層Ｆ３と重畳する位置に赤色発光素子をそれぞれ備える発光デバイスであってもよい。また、青色発光素子を青色サブ画素に、緑色発光素子を緑色サブ画素に、赤色発光素子を赤色サブ画素にそれぞれ備えることにより、発光デバイスＬＤは表示デバイスとして機能してもよい。 In this case, in the light emitting device LD, between the substrate C and the counter substrate CC, the blue light emitting element is arranged at a position overlapping with the first layer F1, the green light emitting element is arranged at a position overlapping with the second layer F2, and the third layer is formed. The light emitting device may include a red light emitting element at a position overlapping with F3. The light emitting device LD may function as a display device by providing the blue light emitting element in the blue sub pixel, the green light emitting element in the green sub pixel, and the red light emitting element in the red sub pixel.
　基板Ｃと対向基板ＣＣとの何れか一方が、透明電極を備えた透明基板であってもよい。この場合、発光デバイスＬＤは、それぞれの発光素子からの光を、透明基板側から取り出してもよい。 Either one of the substrate C and the counter substrate CC may be a transparent substrate provided with a transparent electrode. In this case, the light emitting device LD may take out the light from each light emitting element from the transparent substrate side.
　各々の発光素子の発光は、画素電極Ｅのそれぞれを駆動することにより実現してもよい。この場合、電着槽接続用電極Ｄは、画素電極Ｅのそれぞれを駆動するための信号を入力する端子として機能してもよい。 The light emission of each light emitting element may be realized by driving each pixel electrode E. In this case, the electrodeposition tank connection electrode D may function as a terminal for inputting a signal for driving each pixel electrode E.
　ここで、本実施形態における発光デバイスＬＤの他の例を、図１６の（ｂ）を参照して説明する。 Here, another example of the light emitting device LD according to the present embodiment will be described with reference to FIG.
　理想的には、発光デバイスＬＤは、図１６の（ａ）に示すように、第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３のそれぞれが、第１粒子Ｍ１、第２粒子Ｍ２、および第３粒子Ｍ３のみからなることが好ましい。 Ideally, in the light emitting device LD, as shown in (a) of FIG. 16, each of the first layer F1, the second layer F2, and the third layer F3 has a first particle M1, a second particle M2, And it is preferable that it consists of only the third particles M3.
　しかしながら、本実施形態における製造方法においては、上述した理由から、図１６の（ｂ）に示すように、第２層Ｆ２には第１粒子Ｍ１が、第３層Ｆ３には第１粒子Ｍ１および第２粒子Ｍ２が微量に含まれる場合がある。 However, in the manufacturing method of the present embodiment, for the reasons described above, as shown in FIG. 16B, the first particles M1 are formed in the second layer F2 and the first particles M1 are formed in the third layer F3. The second particles M2 may be contained in a small amount.
　ここで、第２層Ｆ２中の第１粒子Ｍ１は、図１６の（ｂ）に示すように、第２層Ｆ２中の画素電極Ｅ側に形成される傾向がある。これは、第２成膜工程の直前において、残留した第１粒子Ｍ１は、既に電着槽４における画素電極Ｅ側に泳動しているため、次工程である第２成膜工程において、当該第１粒子Ｍ１が優先的に吸着される傾向にあるためである。同様の理由から、第３層Ｆ３中の第１粒子Ｍ１および第２粒子Ｍ２は、図１６の（ｂ）に示すように、第３層Ｆ３中の画素電極Ｅ側に形成される傾向がある。 Here, the first particles M1 in the second layer F2 tend to be formed on the pixel electrode E side in the second layer F2, as shown in (b) of FIG. This is because immediately before the second film forming step, the remaining first particles M1 have already migrated to the pixel electrode E side in the electrodeposition tank 4, so that in the subsequent second film forming step, This is because one particle M1 tends to be preferentially adsorbed. For the same reason, the first particles M1 and the second particles M2 in the third layer F3 tend to be formed on the pixel electrode E side in the third layer F3, as shown in (b) of FIG. ..
　ところで、正孔輸送層と電子輸送層との間に、量子ドットを数層積層して備えた発光素子においては、一般に、当該発光素子の発光は、発光層の正孔輸送層側の界面近くにおいて発生する傾向にある。これは、発光層が量子ドットからなる場合、発光層中の電子の移動度と比較して、発光層中の正孔の移動度が低いことによる。 By the way, in a light emitting device including a plurality of quantum dots stacked between a hole transporting layer and an electron transporting layer, in general, the light emission of the light emitting device is near the interface of the light emitting layer on the hole transporting layer side. Tend to occur in. This is because when the light emitting layer is composed of quantum dots, the mobility of holes in the light emitting layer is lower than the mobility of electrons in the light emitting layer.
　上記事情から、本実施形態においては、基板Ｃの画素電極Ｅが、上述した発光素子のカソードであり、対向基板ＣＣの共通電極ＣＥが、上述した発光素子のアノードであることが好ましい。この場合、第４層Ｆ４が電子輸送層として機能し、第５層Ｆ５が正孔輸送層として機能することが好ましい。 From the above circumstances, in the present embodiment, it is preferable that the pixel electrode E of the substrate C is the cathode of the light emitting element described above, and the common electrode CE of the counter substrate CC is the anode of the light emitting element described above. In this case, it is preferable that the fourth layer F4 function as an electron transport layer and the fifth layer F5 function as a hole transport layer.
　上記構成であれば、第２層Ｆ２中の第１粒子Ｍ１、および第３層Ｆ３中の第１粒子Ｍ１および第２粒子Ｍ２は、それぞれの層の第４層Ｆ４、すなわち電子輸送層側に形成されやすくなる。このため、発光デバイスＬＤのそれぞれの発光素子を駆動した場合であっても、第２層Ｆ２中の第１粒子Ｍ１、および第３層Ｆ３中の第１粒子Ｍ１および第２粒子Ｍ２は、発光しにくくなる。したがって、特定の色の光を発する発光素子から、異なる光が生じる、いわゆる混色が低減され、表示品位が改善する。 With the above configuration, the first particles M1 in the second layer F2 and the first particles M1 and the second particles M2 in the third layer F3 are on the fourth layer F4 of each layer, that is, on the electron transport layer side. It is easily formed. Therefore, even when each light emitting element of the light emitting device LD is driven, the first particles M1 in the second layer F2 and the first particles M1 and the second particles M2 in the third layer F3 emit light. Hard to do. Therefore, so-called color mixing, in which different light is emitted from the light emitting element that emits light of a specific color, is reduced, and display quality is improved.
　〔実施形態４〕
　図１７は、本実施形態に係る発光デバイスの製造装置２を用いた製造方法の一例を説明するための、発光デバイスの製造装置２および基板Ｃの工程断面図である。図１７の各図においては、本実施形態の電着工程における、電着槽４近傍の拡大側面図を示す。 [Embodiment 4]
FIG. 17 is a process cross-sectional view of the light-emitting device manufacturing apparatus 2 and the substrate C for explaining an example of the manufacturing method using the light-emitting device manufacturing apparatus 2 according to the present embodiment. 17 is an enlarged side view of the vicinity of the electrodeposition tank 4 in the electrodeposition process of this embodiment.
　本実施形態における、発光デバイスの製造装置２および基板Ｃは、前実施形態における発光デバイスの製造装置２および基板Ｃと、それぞれ同一の構成を備えている。また、本実施形態における発光デバイスの製造方法は、図１４に示すフローチャートの各工程のうち、ステップＳ２４とステップＳ２６とを除いて、前実施形態における発光デバイスの製造方法と同様の手法により実現できる。本実施形態に係る発光デバイスの製造装置２を用いて、基板Ｃの画素電極Ｅ上に電着による成膜を実行する一例について、図１４および図１７を参照して説明する。 The light emitting device manufacturing apparatus 2 and the substrate C in the present embodiment have the same configurations as the light emitting device manufacturing apparatus 2 and the substrate C in the previous embodiment, respectively. Further, the method for manufacturing the light emitting device according to the present embodiment can be realized by the same method as the method for manufacturing the light emitting device according to the previous embodiment, except for steps S24 and S26 in each step of the flowchart shown in FIG. .. An example of performing film formation by electrodeposition on the pixel electrodes E of the substrate C using the light emitting device manufacturing apparatus 2 according to this embodiment will be described with reference to FIGS. 14 and 17.
　本実施形態に係る発光デバイスの製造方法においては、はじめに、発光デバイスの製造装置２に基板Ｃを設置する（ステップＳ２）。ステップＳ２は、前実施形態と同様に実行される。ただし、本実施形態においては、ステップＳ２において加圧部１０に設置された基板Ｃを、電着槽４に近接させる前に、内部４Ａに電着液Ｌ１、電着液Ｌ２、および電着液Ｌ３と異なる電着液Ｌ４が充填されている。 In the method for manufacturing a light emitting device according to the present embodiment, first, the substrate C is installed in the light emitting device manufacturing apparatus 2 (step S2). Step S2 is executed as in the previous embodiment. However, in the present embodiment, before the substrate C installed in the pressurizing unit 10 in step S2 is brought close to the electrodeposition tank 4, the electrodeposition solution L1, the electrodeposition solution L2, and the electrodeposition solution L2 are placed in the interior 4A. An electrodeposition liquid L4 different from L3 is filled.
　電着液Ｌ４は、電着液Ｌ１、電着液Ｌ２、および電着液Ｌ３の溶媒と同一の溶媒を含んでいてもよい。電着液Ｌ４は、機能粒子として、前実施形態において説明した、第１粒子Ｍ１、第２粒子Ｍ２、および第３粒子Ｍ３を含む。さらに、電着液Ｌ４は、電着液Ｌ３と比較して、第４粒子Ｍ４に代えて、第４粒子Ｍ４Ａ、第４粒子Ｍ４Ｂ、および第４粒子Ｍ４Ｃを含み、第５粒子Ｍ５に代えて、第５粒子Ｍ５Ａ、第５粒子Ｍ５Ｂ、および第５粒子Ｍ５Ｃを含む。 The electrodeposition liquid L4 may contain the same solvent as the solvent of the electrodeposition liquid L1, the electrodeposition liquid L2, and the electrodeposition liquid L3. The electrodeposition liquid L4 contains, as functional particles, the first particles M1, the second particles M2, and the third particles M3 described in the previous embodiment. Furthermore, the electrodeposition liquid L4 includes fourth particles M4A, fourth particles M4B, and fourth particles M4C instead of the fourth particles M4, and instead of the fifth particles M5, as compared with the electrodeposition liquid L3. , Fifth particles M5A, fifth particles M5B, and fifth particles M5C.
　第４粒子Ｍ４Ａ、第４粒子Ｍ４Ｂ、第４粒子Ｍ４Ｃ、第５粒子Ｍ５Ａ、第５粒子Ｍ５Ｂ、および第５粒子Ｍ５Ｃは、前実施形態までの機能粒子と同一の構成を備えていてもよく、特に、同一の極性を有している。ここで、第４粒子Ｍ４Ａ、第４粒子Ｍ４Ｂ、および第４粒子Ｍ４Ｃの閾値電圧の絶対値は、第１粒子Ｍ１の閾値電圧の絶対値よりも小さく、かつ、互いに異なる。また、第５粒子Ｍ５Ａ、第５粒子Ｍ５Ｂ、および第５粒子Ｍ５Ｃの閾値電圧の絶対値は、第３粒子Ｍ３の閾値電圧の絶対値よりも大きく、かつ、互いに異なる。 The fourth particles M4A, the fourth particles M4B, the fourth particles M4C, the fifth particles M5A, the fifth particles M5B, and the fifth particles M5C may have the same configuration as the functional particles up to the previous embodiment, In particular, they have the same polarity. Here, the absolute values of the threshold voltages of the fourth particles M4A, the fourth particles M4B, and the fourth particles M4C are smaller than the absolute values of the threshold voltages of the first particles M1 and are different from each other. The absolute values of the threshold voltages of the fifth particles M5A, the fifth particles M5B, and the fifth particles M5C are larger than the absolute values of the threshold voltages of the third particles M3, and are different from each other.
　特に、本実施形態においては、第４粒子Ｍ４Ｂの閾値電圧の絶対値は、第４粒子Ｍ４Ａの閾値電圧の絶対値よりも大きく、第４粒子Ｍ４Ｃの閾値電圧の絶対値よりも小さい。また、本実施形態においては、第５粒子Ｍ５Ｂの閾値電圧の絶対値は、第５粒子Ｍ５Ａの閾値電圧の絶対値よりも大きく、第５粒子Ｍ５Ｃの閾値電圧の絶対値よりも小さい。 In particular, in the present embodiment, the absolute value of the threshold voltage of the fourth particles M4B is larger than the absolute value of the threshold voltage of the fourth particles M4A and smaller than the absolute value of the threshold voltage of the fourth particles M4C. Further, in the present embodiment, the absolute value of the threshold voltage of the fifth particles M5B is larger than the absolute value of the threshold voltage of the fifth particles M5A and smaller than the absolute value of the threshold voltage of the fifth particles M5C.
　次いで、前実施形態と同様に、加圧部１０を制御して、基板Ｃを電着槽４に押し付け、基板把持工程を実施する（ステップＳ４）。これにより、基板Ｃの画素電極Ｅは電着液Ｌ３に浸漬される。ステップＳ４に次いで、電着工程を実施する。 Next, similarly to the previous embodiment, the pressurizing unit 10 is controlled to press the substrate C against the electrodeposition tank 4, and the substrate holding step is performed (step S4). As a result, the pixel electrode E on the substrate C is immersed in the electrodeposition liquid L3. Following step S4, an electrodeposition step is performed.
　本実施形態においては、ステップＳ２４において、はじめに、絶対値が、第４粒子Ｍ４Ａの閾値電圧の絶対値よりも大きく、第４粒子Ｍ４Ｂの閾値電圧の絶対値よりも小さい電圧を、底面電極８と第１画素電極Ｅ１との間に印加する。これにより、図１７の（ａ）に示すように、第４粒子Ｍ４Ａのみが第１画素電極Ｅ１のそれぞれに泳動し、第１画素電極Ｅ１上に吸着される。 In the present embodiment, in step S24, first, a voltage whose absolute value is larger than the absolute value of the threshold voltage of the fourth particles M4A and smaller than the absolute value of the threshold voltage of the fourth particles M4B is set as the bottom electrode 8. The voltage is applied to the first pixel electrode E1. Thereby, as shown in FIG. 17A, only the fourth particles M4A migrate to each of the first pixel electrodes E1 and are adsorbed on the first pixel electrodes E1.
　上述の電圧印加を十分におこなうことにより、第１画素電極Ｅ１上に、図１７の（ｂ）に示す、第４粒子Ｍ４Ａを含む第４層Ｆ４Ａが成膜される。なお、当該電圧印加は、電着槽４中の第４粒子Ｍ４Ａのほぼ全てが、第４層Ｆ４Ａの成膜のために、画素電極Ｅ上に吸着されるまで実施される。 By sufficiently performing the above voltage application, the fourth layer F4A containing the fourth particles M4A shown in FIG. 17B is formed on the first pixel electrode E1. The voltage application is performed until almost all of the fourth particles M4A in the electrodeposition tank 4 are adsorbed on the pixel electrode E for forming the fourth layer F4A.
　上述のように、第４粒子Ｍ４Ａ、第４粒子Ｍ４Ｂ、および第４粒子Ｍ４Ｃの閾値電圧の絶対値は、互いに異なる。このため、上述のように、第１画素電極Ｅ１のみに、第４粒子Ｍ４Ａのみを吸着させて、第４層Ｆ４Ａを成膜することができる。 As described above, the absolute values of the threshold voltages of the fourth particles M4A, the fourth particles M4B, and the fourth particles M4C are different from each other. Therefore, as described above, the fourth layer F4A can be formed by adsorbing only the fourth particles M4A only on the first pixel electrode E1.
　同様の手法を第４粒子Ｍ４Ｂに適用することにより、図１７の（ｃ）に示すように、第２画素電極Ｅ２に第４粒子Ｍ４Ｂを含む第４層Ｆ４Ｂを製膜できる。また、同様の手法を第４粒子Ｍ４Ｃに適用することにより、図１７の（ｃ）に示すように、第３画素電極Ｅ３に第４粒子Ｍ４Ｃを含む第４層Ｆ４Ｃを、それぞれ個別に成膜することができる。これにより、図１７の（ｃ）に示す、第４層Ｆ４Ａ、第４層Ｆ４Ｂ、および第４層Ｆ４Ｃを、それぞれ異なる画素電極Ｅ上に備えた、第４層Ｆ４が得られる。 By applying the same method to the fourth particles M4B, the fourth layer F4B containing the fourth particles M4B can be formed on the second pixel electrode E2 as shown in (c) of FIG. Further, by applying the same method to the fourth particles M4C, as shown in FIG. 17C, the fourth layer F4C including the fourth particles M4C is separately formed on the third pixel electrode E3. can do. As a result, the fourth layer F4 including the fourth layer F4A, the fourth layer F4B, and the fourth layer F4C shown in (c) of FIG. 17 is provided on different pixel electrodes E, respectively.
　次いで、ステップＳ１６、ステップＳ１８、およびステップＳ２０を前実施形態と同様に実施することにより、図１７の（ｄ）に示す第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３を成膜する。ここで、本実施形態においては、図１７の（ｄ）に示すように、第１層Ｆ１を第４層Ｆ４Ａ上に、第２層Ｆ２を第４層Ｆ４Ｂ上に、第３層Ｆ３を第４層Ｆ４Ｃ上に成膜する。 Then, Step S16, Step S18, and Step S20 are carried out in the same manner as in the previous embodiment to form the first layer F1, the second layer F2, and the third layer F3 shown in FIG. 17D. .. Here, in the present embodiment, as shown in FIG. 17D, the first layer F1 is placed on the fourth layer F4A, the second layer F2 is placed on the fourth layer F4B, and the third layer F3 is placed on the fourth layer F4B. A film is formed on the four-layer F4C.
　次いで、本実施形態においては、ステップＳ２６において、始めに、絶対値が、第５粒子Ｍ５Ａの閾値電圧の絶対値よりも大きく、第５粒子Ｍ５Ｂの閾値電圧の絶対値よりも小さい電圧を、底面電極８と第１画素電極Ｅ１との間に印加する。これにより、図１７の（ｅ）に示すように、第５粒子Ｍ５Ａのみが第１層Ｆ１のそれぞれに泳動し、第１層Ｆ１上に吸着される。 Next, in the present embodiment, in step S26, first, a voltage whose absolute value is larger than the absolute value of the threshold voltage of the fifth particles M5A and smaller than the absolute value of the threshold voltage of the fifth particles M5B is set to the bottom surface. The voltage is applied between the electrode 8 and the first pixel electrode E1. As a result, as shown in (e) of FIG. 17, only the fifth particles M5A migrate to each of the first layers F1 and are adsorbed on the first layers F1.
　上述の電圧印加を十分におこなうことにより、第１層Ｆ１上に、図１７の（ｆ）に示す、第５粒子Ｍ５Ａを含む第５層Ｆ５Ａが成膜される。なお、当該電圧印加は、電着槽４中の第５粒子Ｍ５Ａのほぼ全てが、第５層Ｆ５Ａの成膜のために、画素電極Ｅ上に吸着されるまで実施される。 By sufficiently performing the voltage application described above, the fifth layer F5A including the fifth particles M5A shown in (f) of FIG. 17 is formed on the first layer F1. The voltage application is performed until almost all of the fifth particles M5A in the electrodeposition tank 4 are adsorbed on the pixel electrode E for forming the fifth layer F5A.
　上述のように、第５粒子Ｍ５Ａ、第５粒子Ｍ５Ｂ、および第５粒子Ｍ５Ｃの閾値電圧の絶対値は、互いに異なる。このため、上述のように、第１層Ｆ１のみに、第５粒子Ｍ５Ａのみを吸着させて、第５層Ｆ５Ａを成膜することができる。 As described above, the absolute values of the threshold voltages of the fifth particles M5A, the fifth particles M5B, and the fifth particles M5C are different from each other. Therefore, as described above, the fifth layer F5A can be formed by adsorbing only the fifth particles M5A only on the first layer F1.
　同様の手法を第５粒子Ｍ５Ｂに適用することにより、図１７の（ｆ）に示すように、第２層Ｆ２に第５粒子Ｍ５Ｂを含む第５層Ｆ５Ｂを製膜できる。また、同様の手法を第５粒子Ｍ５Ｃに適用することにより、図１７の（ｆ）に示すように、第３層Ｆ３に第５粒子Ｍ５Ｃを含む第５層Ｆ５Ｃを、それぞれ個別に成膜することができる。これにより、図１７の（ｆ）に示す、第５層Ｆ５Ａ、第５層Ｆ５Ｂ、および第５層Ｆ５Ｃを、第１層Ｆ１上、第２層Ｆ２上、および第３層Ｆ３上にそれぞれ備えた、第５層Ｆ５が得られる。 By applying the same method to the fifth particles M5B, the fifth layer F5B including the fifth particles M5B can be formed in the second layer F2 as shown in (f) of FIG. Further, by applying the same method to the fifth particles M5C, as shown in (f) of FIG. 17, the fifth layer F5C including the fifth particles M5C is separately formed on the third layer F3. be able to. Thus, the fifth layer F5A, the fifth layer F5B, and the fifth layer F5C shown in (f) of FIG. 17 are provided on the first layer F1, the second layer F2, and the third layer F3, respectively. In addition, the fifth layer F5 is obtained.
　次いで、ステップＳ２２、ステップＳ１２、およびステップＳ１４を前実施形態と同様に実施する。これにより、本実施形態においては、前実施形態の基板Ｃと比較して、第４層Ｆ４と第５層Ｆ５とについても、各画素電極Ｅと重畳する位置に個別に形成された基板Ｃが得られる。 Next, step S22, step S12, and step S14 are performed in the same manner as in the previous embodiment. As a result, in the present embodiment, as compared with the substrate C of the previous embodiment, the substrates C individually formed at the positions overlapping the pixel electrodes E are also formed for the fourth layer F4 and the fifth layer F5. can get.
　本実施形態におけるにおいて得られた基板Ｃを備える発光デバイスの例を、図１８を参照して説明する。図１８は、本実施形態における発光デバイスＬＤの断側面図である。図１８に示す発光デバイスＬＤは、上述の基板Ｃの第５層Ｆ５の上層に、対向基板ＣＣを形成することにより得られる。対向基板ＣＣは、前実施形態における対向基板ＣＣと同一の構成を備えている。 An example of a light emitting device including the substrate C obtained in the present embodiment will be described with reference to FIG. FIG. 18 is a sectional side view of the light emitting device LD according to this embodiment. The light emitting device LD shown in FIG. 18 is obtained by forming the counter substrate CC on the fifth layer F5 of the substrate C described above. The counter substrate CC has the same configuration as the counter substrate CC in the previous embodiment.
　本実施形態における発光デバイスＬＤは、前実施形態における発光デバイスＬＤと比較して、第４層Ｆ４と第５層Ｆ５とにおいても、画素電極Ｅごとに、個別に形成されている。このため、第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３のそれぞれが接する第４層Ｆ４に含まれる機能粒子が互いに異なる。同様に、第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３のそれぞれが接する第５層Ｆ５に含まれる機能粒子が互いに異なる。 The light emitting device LD in the present embodiment is individually formed for each pixel electrode E in the fourth layer F4 and the fifth layer F5 as compared with the light emitting device LD in the previous embodiment. Therefore, the functional particles contained in the fourth layer F4 with which the first layer F1, the second layer F2, and the third layer F3 are in contact are different from each other. Similarly, the functional particles contained in the fifth layer F5 with which the first layer F1, the second layer F2, and the third layer F3 are in contact are different from each other.
　したがって、本実施形態においては、第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３のそれぞれに適した第４層Ｆ４および第５層Ｆ５を個別に形成することができる。特に、本実施形態における発光デバイスＬＤの第１層Ｆ１、第２層Ｆ２、および第３層Ｆ３が、それぞれ異なる色の光を発する発光層の場合、それぞれの発光層に適する正孔輸送層および電子輸送層が、発する色ごとに異なる場合がある。 Therefore, in the present embodiment, the fourth layer F4 and the fifth layer F5 suitable for the first layer F1, the second layer F2, and the third layer F3 can be individually formed. In particular, when the first layer F1, the second layer F2, and the third layer F3 of the light emitting device LD according to the present embodiment are light emitting layers that emit light of different colors, respectively, a hole transport layer suitable for the respective light emitting layers and The electron transport layer may be different for each color emitted.
　本実施形態において、例えば、第４層Ｆ４が電子輸送層であり、第５層Ｆ５が正孔輸送層である場合、発する色ごとに適切な電子輸送層および正孔輸送層を個別に形成することができる。したがって、本実施形態における製造方法によれば、より発光効率を改善した発光素子を備えた発光デバイスＬＤを提供できる。 In the present embodiment, for example, when the fourth layer F4 is an electron transport layer and the fifth layer F5 is a hole transport layer, an appropriate electron transport layer and hole transport layer are separately formed for each color to be emitted. be able to. Therefore, according to the manufacturing method of the present embodiment, it is possible to provide the light emitting device LD including the light emitting element with further improved light emitting efficiency.
　なお、上述した各実施形態における、ステップＳ１６においては、第１粒子Ｍ１を吸着しない第２画素電極Ｅ２および第３画素電極Ｅ３と、底面電極８との間に、第６電圧を印加してもよい。ここで、第６電圧の絶対値は、第１電圧の絶対値よりも小さい。 In addition, in step S16 in each of the above-described embodiments, the sixth voltage may be applied between the bottom electrode 8 and the second pixel electrode E2 and the third pixel electrode E3 that do not adsorb the first particles M1. Good. Here, the absolute value of the sixth voltage is smaller than the absolute value of the first voltage.
　当該構成によれば、第１粒子Ｍ１は、第２画素電極Ｅ２および第３画素電極Ｅ３と第１画素電極Ｅ１との間に生じる電界によっても、第１画素電極Ｅ１に向かって泳動する。このため、第１画素電極Ｅ１における第１層Ｆ１の成膜速度が向上する。なお、第６電圧の絶対値が、第１電圧の絶対値よりも小さいことから、第２画素電極Ｅ２または第３画素電極Ｅ３が、第１粒子Ｍ１を吸着することが低減される。 According to the configuration, the first particles M1 migrate toward the first pixel electrode E1 also by the electric field generated between the second pixel electrode E2 and the third pixel electrode E3 and the first pixel electrode E1. Therefore, the film formation rate of the first layer F1 on the first pixel electrode E1 is improved. Since the absolute value of the sixth voltage is smaller than the absolute value of the first voltage, adsorption of the first particles M1 by the second pixel electrode E2 or the third pixel electrode E3 is reduced.
　さらに、第６電圧は、第１電圧と逆の極性を有していてもよい。当該構成により、第２画素電極Ｅ２および第３画素電極Ｅ３が第１粒子Ｍ１を吸着することをより低減できる。なお、上述のように第６電圧の絶対値が、第１電圧の絶対値よりも小さいことから、上記構成においても、底面電極８が、第１粒子Ｍ１を吸着することが低減される。 Furthermore, the sixth voltage may have a polarity opposite to that of the first voltage. With this configuration, it is possible to further reduce the adsorption of the first particles M1 by the second pixel electrode E2 and the third pixel electrode E3. Since the absolute value of the sixth voltage is smaller than the absolute value of the first voltage as described above, adsorption of the first particles M1 by the bottom surface electrode 8 is also reduced in the above configuration.
　同様に、上述した各実施形態における、ステップＳ１８においては、第２粒子Ｍ２を吸着しない第１画素電極Ｅ１および第３画素電極Ｅ３と、底面電極８との間に、第７電圧を印加してもよい。ここで、第７電圧の絶対値は、第２電圧の絶対値よりも小さい。 Similarly, in step S18 in each of the above-described embodiments, the seventh voltage is applied between the bottom electrode 8 and the first pixel electrode E1 and the third pixel electrode E3 that do not adsorb the second particles M2. Good. Here, the absolute value of the seventh voltage is smaller than the absolute value of the second voltage.
　当該構成によれば、第２粒子Ｍ２は、第１画素電極Ｅ１および第３画素電極Ｅ３と第２画素電極Ｅ２との間に生じる電界によっても、第２画素電極Ｅ２に向かって泳動する。このため、第２画素電極Ｅ２における第２層Ｆ２の成膜速度が向上する。なお、第７電圧の絶対値が、第２電圧の絶対値よりも小さいことから、第１画素電極Ｅ１または第３画素電極Ｅ３が、第２粒子Ｍ２を吸着することが低減される。 According to the configuration, the second particles M2 migrate toward the second pixel electrode E2 also by the electric field generated between the first pixel electrode E1 and the third pixel electrode E3 and the second pixel electrode E2. Therefore, the film formation rate of the second layer F2 on the second pixel electrode E2 is improved. Since the absolute value of the seventh voltage is smaller than the absolute value of the second voltage, the adsorption of the second particles M2 by the first pixel electrode E1 or the third pixel electrode E3 is reduced.
　さらに、第７電圧は、第２電圧と逆の極性を有していてもよい。当該構成により、第１画素電極Ｅ１および第３画素電極Ｅ３が第２粒子Ｍ２を吸着することをより効率的に低減できる。なお、上述のように第７電圧の絶対値が、第２電圧の絶対値よりも小さいことから、上記構成においても、底面電極８が、第２粒子Ｍ２を吸着することが低減される。 Furthermore, the seventh voltage may have a polarity opposite to that of the second voltage. With this configuration, it is possible to more efficiently reduce the adsorption of the second particles M2 by the first pixel electrode E1 and the third pixel electrode E3. Since the absolute value of the seventh voltage is smaller than the absolute value of the second voltage as described above, adsorption of the second particles M2 by the bottom surface electrode 8 is also reduced in the above configuration.
　本発明は上述した各実施形態に限定されるものではなく、請求項に示した範囲で種々の変更が可能であり、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。さらに、各実施形態にそれぞれ開示された技術的手段を組み合わせることにより、新しい技術的特徴を形成することができる。 The present invention is not limited to the above-described embodiments, but various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments Is also included in the technical scope of the present invention. Furthermore, new technical features can be formed by combining the technical means disclosed in each of the embodiments.
２　　　　　　　　発光デバイスの製造装置
４　　　　　　　　電着槽
８　　　　　　　　底面電極
Ｃ　　　　　　　　基板
Ｅ　　　　　　　　画素電極
Ｕ　　　　　　　　平面電極
ＬＤ　　　　　　　発光デバイス
Ｌ１・Ｌ２・Ｌ３　電着液
Ｍ１　　　　　　　第１粒子
Ｍ２　　　　　　　第２粒子
Ｍ３　　　　　　　第３粒子
Ｍ４　　　　　　　第４粒子
Ｍ５　　　　　　　第５粒子 2 Light Emitting Device Manufacturing Equipment 4 Electrodeposition Tank 8 Bottom Electrode C Substrate E Pixel Electrode U Planar Electrode LD Light Emitting Device L1, L2, L3 Electrodeposition Solution M1 First Particle M2 Second Particle M3 Third Particle M4 Fourth Particle M5 5 particles

Claims (13)

  1. 　基板に形成された基板電極に対する、機能粒子の電着を行う発光デバイスの製造方法であって、
    　前記基板と、該基板に平行に配置された対向電極との間において、第１粒子と、当該第１粒子と異なる第２粒子とを、前記機能粒子として含む電着液を挟持する基板把持工程と、
    　前記基板把持工程の後、前記基板電極の内の第１基板電極と、前記対向電極との間に、第１電圧を印加し、前記第１粒子を前記第１基板電極に成膜する第１成膜工程と、
    　前記第１成膜工程に次いで、前記基板電極の内の第２基板電極と、前記対向電極との間に、第２電圧を印加し、前記第２粒子を前記第２基板電極に成膜する第２成膜工程とを備え、
    　前記第１電圧の絶対値が、前記第２電圧の絶対値よりも小さい発光デバイスの製造方法。     A method for manufacturing a light-emitting device, which comprises electrodepositing functional particles on a substrate electrode formed on a substrate,
    A substrate gripping step of sandwiching an electrodeposition liquid containing first particles and second particles different from the first particles as the functional particles between the substrate and a counter electrode arranged in parallel with the substrate. When,
    After the substrate holding step, a first voltage is applied between the first substrate electrode of the substrate electrodes and the counter electrode to form the first particles on the first substrate electrode. Film formation process,
    Subsequent to the first film forming step, a second voltage is applied between the second substrate electrode of the substrate electrodes and the counter electrode to form the second particles on the second substrate electrode. A second film forming step,
    The method for manufacturing a light emitting device, wherein the absolute value of the first voltage is smaller than the absolute value of the second voltage.
  2. 　前記第１基板電極と前記第２基板電極とが同一の電極であり、前記第２成膜工程において、前記第２粒子を、前記第１粒子の層の上層に形成する請求項１に記載の発光デバイスの製造方法。 The said 1st board|substrate electrode and the said 2nd board|substrate electrode are the same electrodes, The said 2nd particle|grain is formed in the upper layer of the layer of the said 1st particle|grain in the said 2nd film-forming process. Manufacturing method of light emitting device.
  3. 　前記第１基板電極と前記第２基板電極とが互いに異なる電極である請求項１に記載の発光デバイスの製造方法。 The method for manufacturing a light emitting device according to claim 1, wherein the first substrate electrode and the second substrate electrode are electrodes different from each other.
  4. 　前記電着液が、前記機能粒子として、前記第１粒子および前記第２粒子と互いに異なる第３粒子をさらに含み、
    　前記第２成膜工程に次いで、前記基板電極の内の第３基板電極と、前記対向電極との間に、第３電圧を印加し、前記第３粒子を前記第３基板電極に成膜する第３成膜工程をさらに備え、
    　前記第２電圧の絶対値が、前記第３電圧の絶対値よりも小さい請求項３に記載の発光デバイスの製造方法。     The electrodeposition liquid further contains, as the functional particles, third particles different from the first particles and the second particles,
    Subsequent to the second film forming step, a third voltage is applied between the third substrate electrode of the substrate electrodes and the counter electrode to form the third particles on the third substrate electrode. Further comprising a third film forming step,
    The method for manufacturing a light emitting device according to claim 3, wherein the absolute value of the second voltage is smaller than the absolute value of the third voltage.
  5. 　前記電着液が、前記機能粒子として、前記第１粒子、前記第２粒子、および前記第３粒子と互いに異なる第４粒子をさらに含み、
    　前記第１成膜工程に先立って、前記第１基板電極、前記第２基板電極、および前記第３基板電極と、前記対向電極との間に、第４電圧を印加し、前記第４粒子を前記第１基板電極、前記第２基板電極、および前記第３基板電極に成膜する第４成膜工程をさらに備え、
    　前記第４電圧の絶対値が、前記第１電圧の絶対値よりも小さい請求項４に記載の発光デバイスの製造方法。     The electrodeposition liquid further contains, as the functional particles, fourth particles different from the first particles, the second particles, and the third particles,
    Prior to the first film forming step, a fourth voltage is applied between the first substrate electrode, the second substrate electrode, the third substrate electrode, and the counter electrode to remove the fourth particles. Further comprising a fourth film forming step of forming a film on the first substrate electrode, the second substrate electrode, and the third substrate electrode,
    The method for manufacturing a light emitting device according to claim 4, wherein the absolute value of the fourth voltage is smaller than the absolute value of the first voltage.
  6. 　前記電着液が、前記機能粒子として、前記第１粒子、前記第２粒子、および前記第３粒子と互いに異なる第５粒子をさらに含み、
    　前記第３成膜工程に次いで、前記第１基板電極、前記第２基板電極、および前記第３基板電極と、前記対向電極との間に、第５電圧を印加し、前記第５粒子を前記第１基板電極、前記第２基板電極、および前記第３基板電極に成膜する第５成膜工程をさらに備え、
    　前記第３電圧の絶対値が、前記第５電圧の絶対値よりも小さい請求項４または５に記載の発光デバイスの製造方法。     The electrodeposition liquid further contains, as the functional particles, fifth particles different from the first particles, the second particles, and the third particles,
    Next to the third film forming step, a fifth voltage is applied between the first substrate electrode, the second substrate electrode, the third substrate electrode and the counter electrode to remove the fifth particles from each other. Further comprising a fifth film forming step of forming a film on the first substrate electrode, the second substrate electrode, and the third substrate electrode,
    The method for manufacturing a light emitting device according to claim 4, wherein the absolute value of the third voltage is smaller than the absolute value of the fifth voltage.
  7. 　前記第１粒子が青色光を発する量子ドットであり、前記第２粒子が緑色光を発する量子ドットであり、前記第３粒子が赤色光を発する量子ドットである請求項４から６の何れか１項に記載の発光デバイスの製造方法。 7. The first particle is a quantum dot emitting blue light, the second particle is a quantum dot emitting green light, and the third particle is a quantum dot emitting red light. Item 6. A method for manufacturing a light emitting device according to item.
  8. 　前記第１成膜工程において、前記第１基板電極と異なる前記基板電極と、前記対向電極との間に、第６電圧を印加し、
    　前記第６電圧の絶対値が、前記第１電圧の絶対値よりも小さい請求項３から７の何れか１項に記載の発光デバイスの製造方法。     In the first film forming step, a sixth voltage is applied between the substrate electrode different from the first substrate electrode and the counter electrode,
    The method for manufacturing a light emitting device according to claim 3, wherein an absolute value of the sixth voltage is smaller than an absolute value of the first voltage.
  9. 　前記第２成膜工程において、前記第２基板電極と異なる前記基板電極と、前記対向電極との間に、第７電圧を印加し、
    　前記第７電圧の絶対値が、前記第２電圧の絶対値よりも小さい請求項３から８の何れか１項に記載の発光デバイスの製造方法。     In the second film forming step, a seventh voltage is applied between the counter electrode and the substrate electrode different from the second substrate electrode,
    The method for manufacturing a light emitting device according to claim 3, wherein the absolute value of the seventh voltage is smaller than the absolute value of the second voltage.
  10. 　前記第１成膜工程において、前記第１基板電極と、前記対向電極との間に、前記第１電圧を印加する順電圧印加工程と、前記第１基板電極と、前記対向電極との間に、前記第１電圧とは極性が逆であり、かつ、前記第１電圧よりも絶対値が小さい第８電圧を印加する逆電圧印加工程とを、交互に実行する請求項１から９の何れか１項に記載の発光デバイスの製造方法。 In the first film forming step, a forward voltage applying step of applying the first voltage between the first substrate electrode and the counter electrode, and between the first substrate electrode and the counter electrode The reverse voltage applying step of applying an eighth voltage having a polarity opposite to that of the first voltage and having an absolute value smaller than that of the first voltage is alternately executed. Item 1. A method of manufacturing a light emitting device according to item 1.
  11. 　前記第１成膜工程の直前において、前記第１粒子と前記第２粒子とを、前記電着液において混合する請求項１から１０の何れか１項に記載の発光デバイスの製造方法。 The method for manufacturing a light emitting device according to claim 1, wherein the first particles and the second particles are mixed in the electrodeposition liquid immediately before the first film forming step.
  12. 　前記機能粒子が、発光素子の機能層の材料である請求項１から１１の何れか１項に記載の発光デバイスの製造方法。 The method for manufacturing a light emitting device according to claim 1, wherein the functional particles are a material for a functional layer of a light emitting element.
  13. 　前記基板電極が、前記発光素子のカソードである請求項１２に記載の発光デバイスの製造方法。 The method for manufacturing a light emitting device according to claim 12, wherein the substrate electrode is a cathode of the light emitting element.
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