CN113745440B - Manufacturing method of quantum dot device - Google Patents
Manufacturing method of quantum dot device Download PDFInfo
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- CN113745440B CN113745440B CN202110941251.XA CN202110941251A CN113745440B CN 113745440 B CN113745440 B CN 113745440B CN 202110941251 A CN202110941251 A CN 202110941251A CN 113745440 B CN113745440 B CN 113745440B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
Abstract
The embodiment of the application discloses a manufacturing method of a quantum dot device, which utilizes a first electric field to drive a quantum dot material to move, overcomes mutual repulsion force between the quantum dot material and the quantum dot material to approach, and generates collision, so that a surface ligand of the quantum dot material falls off. After the surface ligand of the quantum dot material is detached, the second electric field further drives the quantum dot particles to move and gather on the electrode with the opposite electric property. Under the action of an electric field force vertical to the surface of the electrode, the quantum dot particles are tightly stacked in the film forming process, and gaps among the quantum dot particles are further reduced, so that the quantum dot film with extremely high density is obtained. The ligand in the quantum dot film is lost, so that more inorganic components are contained in the quantum dot film, the quantum dot interval is reduced, and the density of the quantum dot film is increased. The carrier transfer rate between the quantum dots can be improved. The quantum dot film provided by the embodiment of the application is applied to the quantum dot light-emitting diode, so that the light-emitting efficiency and the stability of the quantum dot light-emitting diode are improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a manufacturing method of a quantum dot device.
Background
Among many next-generation Light Emitting display devices, Quantum Dot Light Emitting Diodes (QLEDs) have unique advantages, such as wide color gamut, high purity, high brightness, low voltage, and extremely thin appearance, and thus have great development prospects. Due to the disadvantage that the quantum dots in the QLED are easily affected by heat and moisture, the same evaporation method as that of the Organic Light-Emitting Diode (OLED) cannot be realized, and only the inkjet printing process can be developed. At present, the QLED technology is still in a starting stage, and has the restriction factors of low reliability, low efficiency, difficult solution process research and development and the like. In the research of the prior art, the inventors of the present application found that a method of preparing a light emitting layer using electrophoretically deposited Quantum Dots (QDs) lacks an effective design for materials and processes, so that the carrier mobility of the obtained QD film is low, thereby making the light emitting efficiency thereof low.
Disclosure of Invention
The embodiment of the application provides a manufacturing method of a quantum dot device, which can improve the luminous efficiency and stability of a quantum dot film.
The embodiment of the application provides a manufacturing method of a quantum dot device, which comprises the following steps:
providing a quantum dot solution and an array substrate, wherein the quantum dot solution comprises a quantum dot material and a solvent, and the array substrate comprises a pixel electrode;
immersing the pixel electrode in the quantum dot solution;
applying a first electric field to the quantum dot solution;
the first electric field drives the quantum dot material to move and collide, so that at least part of ligands of the quantum dot material fall off to obtain quantum dot particles;
applying a second electric field to the quantum dot solution;
and the second electric field drives the quantum dot particles to be deposited on the pixel electrode, and a quantum dot film is formed on the pixel electrode to obtain the quantum dot device.
Optionally, in some embodiments of the present application, an electric field electrode is further immersed in the quantum dot solution, and the applying a first electric field to the quantum dot solution includes:
energizing the electric field electrode and the pixel electrode;
and a voltage difference is formed between the electric field electrode and the pixel electrode so as to apply a first electric field to the quantum dot solution.
Optionally, in some embodiments of the present application, an electric field electrode is further immersed in the quantum dot solution, and the applying a second electric field to the quantum dot solution includes:
energizing the electric field electrode and the pixel electrode;
and a voltage difference is formed between the electric field electrode and the pixel electrode so as to apply a second electric field to the quantum dot solution.
Optionally, in some embodiments of the present application, the energizing the electric field electrode and the pixel electrode includes:
and electrifying alternating current to the electric field electrode and the pixel electrode, or electrifying direct current to the electric field electrode and the pixel electrode.
Optionally, in some embodiments of the present application, the frequency of the alternating current is 10Hz or higher.
Optionally, in some embodiments of the present application, an electric field strength of the first electric field is 10V/μm or more, and an electric field strength of the second electric field is 10V/μm or more.
Optionally, in some embodiments of the present application, the thickness of the quantum dot thin film is between 5nm and 50 nm.
Optionally, in some embodiments herein, the ligand comprises a combination of one or more of an amine, an acid, a thiol, and an organophosphorus.
Optionally, in some embodiments herein, the solvent is an organic solvent having a boiling point below 200 ℃.
Optionally, in some embodiments of the present application, the concentration of the quantum dot solution is between 1mg/mL to 300 mg/mL.
According to the manufacturing method of the quantum dot device, the quantum dot material is driven to move by the first electric field, the mutual repulsion force between the quantum dot material and the quantum dot material is overcome to enable the quantum dot material to approach the quantum dot material, and collision occurs, so that the surface ligand of the quantum dot material falls off. After the surface ligand of the quantum dot material is detached, the second electric field further drives the quantum dot particles to move and gather on the pixel electrode with the opposite electric property. Under the action of an electric field force vertical to the surface of the electrode, the quantum dot particles are tightly stacked in the film forming process, and gaps among the quantum dot particles are further reduced, so that the quantum dot film with extremely high density is obtained. The ligand in the quantum dot film is lost, so that more inorganic components are contained, the quantum dot interval is reduced, the density of the quantum dot film is increased, and even the quantum dot film in a crystal state is obtained. The carrier transfer rate between the quantum dots can be improved. The quantum dot film provided by the embodiment of the application is applied to the QLED, so that the luminous efficiency and stability of the QLED are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing a quantum dot device according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a method for manufacturing a quantum dot device according to an embodiment of the present disclosure;
FIG. 3 shows the fluorescence lifetime test results of quantum dot devices provided in the embodiments of the present application;
fig. 4 is a density test result of a quantum dot device provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
The embodiment of the application provides a manufacturing method of a quantum dot device. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic flow chart of a method for manufacturing a quantum dot device according to an embodiment of the present disclosure. Fig. 2 is a schematic diagram of a manufacturing method of a quantum dot device provided in an embodiment of the present application. Wherein the solvent is not shown in fig. 2, the array substrate only shows the pixel electrode 103 as a schematic. The first electric field and the second electric field are illustrated by a dc electric field, which is indicated by dashed arrows in fig. 2. The manufacturing method of the quantum dot device provided by the embodiment of the application specifically comprises the following steps:
The quantum dot material 102 includes a luminescent core and an inorganic protective shell. The luminescent core material of the quantum dot material 102 is ZnCdSe2、InP、Cd2SSe、CdSe、Cd2SeTe and InAs. In particular, the luminescent core may be a green-emitting material, such as ZnCdSe2、InP、Cd2SSe, and the like. The luminescent core may also be a red-emitting material, such as CdSe, Cd2SeTe, InAs, and the like. The inorganic protective shell material of the quantum dot material 102 is CdS, ZnSe or ZnCdS2ZnS and ZnO. The quantum dot material 102 may also include a hydrogel loaded quantum dot structure, CdSe-SiO2Quantum dots, and perovskite quantum dots.
The ligand 102a of the quantum dot material 102 includes one or more of amine, acid, thiol, and organic phosphorus. Specifically, the thiol may be n-octyl thiol, the organophosphorus may be trioctylphosphine, and the acid may be carboxyl polyethylene glycol (PEG-COOH).
Optionally, the solvent is an organic solvent having a boiling point below 200 ℃. Specifically, the solvent comprises one or more of methanol, ethanol, ethylene glycol, propylene glycol, ethyl acetate, petroleum ether, propylene glycol methyl ether acetate, octane, N-hexane, N-N' -dimethylformamide and dimethyl sulfoxide.
And step 12, immersing the pixel electrode 103 in the quantum dot solution 101.
The pixel electrode 103 may be formed using a transparent metal oxide or a stack of a metal and a transparent metal oxide. The electrodes may also be made of graphene materials, metal materials, transition metal chalcogenides, and the like.
Specifically, the transition metal sulfide includes molybdenum sulfide (MoS)2) Molybdenum selenide (MoSe)2) Tungsten sulfide (WS)2) Or tungsten selenide (WSe)2)。
The transparent metal oxide layer is made of any one of indium gallium zinc oxide, indium zinc tin oxide, indium gallium zinc tin oxide, indium zinc oxide, indium aluminum zinc oxide, indium gallium tin oxide or antimony tin oxide. The materials have good conductivity and transparency, and are small in thickness, so that the whole thickness of the display panel cannot be influenced. Meanwhile, the electronic radiation, ultraviolet light and infrared light which are harmful to human bodies can be reduced.
The metal layer is made of any one of silver, aluminum, nickel, chromium, molybdenum, copper, tungsten or titanium. The metal has good conductivity and lower cost, and the production cost can be reduced while the conductivity of the anode is ensured.
In one embodiment, the pixel electrode 103 is deposited as a stack of ITO/Ag/ITO.
It is understood that the pixel electrode 103 may be an anode or a cathode of the light emitting device, and the anode or the cathode may be specifically determined according to the requirement of the quantum dot device.
Optionally, the array substrate includes a pixel electrode 103. The immersion of the pixel electrode 103 in the quantum dot solution 101 may be performed by facing a side of the array substrate on which the pixel electrode 103 is disposed toward the quantum dot solution 101 by a clamping tool, and then immersing the pixel electrode 103 in the quantum dot solution 101. The array substrate provided with the pixel electrode 103 may be entirely immersed in the quantum dot solution 101. It is understood that the solvent of the quantum dot solution 101 is a colorless, transparent, low-boiling point organic or inorganic solvent, and does not affect other film layers on the array substrate and the pixel electrode 103. In addition, the solvent is convenient to remove after the quantum dot thin film 105 is manufactured because the boiling point of the solvent is low.
The array substrate may include a substrate, a light-shielding layer, a first capacitor plate, a buffer layer, a semiconductor layer, a second capacitor substrate, a gate insulating layer, a gate layer, an interlayer insulating layer, a drain trace, a source trace, an auxiliary cathode, a passivation layer, a planarization layer, and a pixel electrode 103, which are sequentially stacked. The semiconductor layer comprises a drain region, an active region and a source region.
The above description is given by taking a thin film transistor as a top gate structure as an example. It is to be understood that the present application does not limit the structure of the thin film transistor included in the array substrate, and the thin film transistor may be a top gate thin film transistor, a bottom gate thin film transistor, a double gate thin film transistor, or a single gate thin film transistor. The specific film layers of the array substrate and the assembly thereof are well known to those skilled in the art and will not be described herein.
And step 13, applying a first electric field to the quantum dot solution 101.
Optionally, the quantum dot solution 101 is further immersed in an electric field electrode 104. Applying a first electric field to the quantum dot solution 101, comprising the steps of: the electric field electrode 104 and the pixel electrode 103 are energized to form a voltage difference between the electric field electrode 104 and the pixel electrode 103, so as to apply a first electric field to the quantum dot solution 101.
It should be noted that the electric field electrode 104 may be an additional electrode, an auxiliary electrode, or another pixel electrode. Wherein the external electrodes are only used for generating an electric field. As shown in fig. 2, an additional electrode is provided on one side of the pixel electrode 103. The quantum dot thin film 105 is deposited by forming a vertical electric field with the pixel electrode 103 through the additional electrode. The method of adding the electrode makes the electric field direction easier to control, and can reduce the processing difficulty.
Wherein, the auxiliary electrode may be disposed on the array substrate. For example, the auxiliary electrode may be a signal trace or an auxiliary cathode in the array substrate. The signal traces may be data signal traces for inputting data signals to the pixel circuits. The signal trace may also be any other trace in the pixel circuit. The auxiliary cathode can be used for connecting the surface cathode so as to reduce the voltage drop phenomenon of the surface cathode. The existing signal wiring or auxiliary cathode on the array substrate is directly used as another electrode to form an electric field with the pixel electrode 103, no additional electrode is needed, and the electric field with sufficient strength can be generated under low voltage because the distance between the electrode on the array substrate and the pixel electrode 103 is short.
The other pixel electrode is the same as the pixel electrode 103 and is disposed on the other array substrate. That is, the two pixel electrodes 103 disposed on the array substrate are immersed in the quantum dot solution 101, so that the quantum dot thin films 105 can be simultaneously deposited on the two pixel electrodes 103, thereby increasing the production efficiency.
When the quantum dot material 102 in the quantum dot solution 101 is positively charged, the pixel electrode 103 should be connected to the negative electrode, whereas when the pixel electrode 103 is connected to the positive electrode, the quantum dot material 102 is negatively charged, as shown in fig. 2.
Optionally, the step of energizing the electric field electrode 104 and the pixel electrode 103 includes energizing the electric field electrode 104 and the pixel electrode 103 with alternating current, or energizing the electric field electrode 104 and the pixel electrode 103 with direct current. In this embodiment, the first electric field is an alternating-current electric field, so that the quantum dot material 102 reciprocates back and forth and collides under the action of the alternating-current electric field, thereby dropping more ligands 102a, enabling the ligands 102a to drop more completely, and facilitating the increase of the density of the quantum dot film 105 during deposition. Of course, the first electric field may also be a dc electric field, that is, a dc current is applied to the auxiliary electrode and the pixel electrode 103, so that a voltage difference is formed between the auxiliary electrode and the pixel electrode 103, so as to apply the first electric field to the quantum dot solution 101. In order to make the quantum dots collide more sufficiently, if the first electric field is a dc electric field, the electric field strength needs to be increased.
The first electric field drives the quantum dot material 102 to move, and overcomes the mutual repulsion force to approach and collide with each other, so that the surface ligand 102a falls off. Referring to fig. 3, fig. 3 is a fluorescence lifetime test result of a quantum dot device according to an embodiment of the present disclosure. The abscissa in fig. 3 is the electric field strength E in volts/micrometer (V/μm). The ordinate in FIG. 3 is the fluorescence lifetime τ in nanoseconds (ns). As can be seen from fig. 3, the fluorescence lifetime τ of the deposited quantum dot thin film 105 varies at different electric field strengths E. The fluorescence lifetime τ of the quantum dot thin film 105 first changes slightly as the electric field strength E increases. When the electric field strength exceeds 10V/. mu.m, the fluorescence lifetime τ rapidly decreases. This indicates that the surface defect states of the quantum dot thin film 105 become more, which also indicates that the ligands 102a on the surface of the quantum dot material 102 are more exfoliated.
Therefore, the electric field strength of the first electric field is 10V/mum or more. Specifically, the electric field strength of the first electric field may be 10V/μm, 20V/μm, 30V/μm, 40V/μm, or 50V/μm. Of course, the above values are merely exemplary, and the electric field strength of the first electric field may be more than 10V/μm, which is not limited in the present application.
And step 15, applying a second electric field to the quantum dot solution 101.
Optionally, the quantum dot solution 101 is also immersed in an electric field electrode 104. Applying a second electric field to the quantum dot solution 101, comprising the steps of: the electric field electrode 104 and the pixel electrode 103 are energized to form a voltage difference between the electric field electrode 104 and the pixel electrode 103, so as to apply a second electric field to the quantum dot solution 101. For the description of the electric field electrode 104, reference is made to the above embodiments, which are not repeated herein.
Optionally, the step of energizing the electric field electrode 104 and the pixel electrode 103 includes energizing the electric field electrode 104 and the pixel electrode 103 with alternating current, or energizing the electric field electrode 104 and the pixel electrode 103 with direct current. In the embodiment of the present application, the quantum dot particles 102b are moved and collected on the pixel electrode 103 by using the dc electric field, so that the quantum dot thin film 105 with high-density collection can be obtained. When alternating current is applied to the electric field electrode 104 and the pixel electrode 103, it can be used to deposit the quantum dot thin film 105 on both electrodes forming the electric field. For example, when the electric field electrode 104 is another pixel electrode 103, the quantum dot thin film 105 can be deposited on the two devices simultaneously by applying alternating current to the electric field electrode 104 and the pixel electrode 103, so that the production process is accelerated.
The above embodiment describes a method of applying a first electric field and a second electric field to the quantum dot solution 101 by using at least the pixel electrode 103 as one of the electrodes. The pixel electrode 103 is used as an electrode for forming an electric field, so that the quantum dot particles 102b can be more accurately deposited on the pixel electrode 103, waste of the quantum dot particles 102b is avoided, and material cost can be saved. Of course, in some embodiments, the applied electric field may also be applied to the quantum dot solution 101. For example, the quantum dot solution 101 is placed in a container, and an electrode is arranged outside the container to form a horizontal electric field or a vertical electric field, and the direction of the formed electric field is adjusted according to the position of the pixel electrode 103 in the quantum dot solution 101. The present application does not limit the manner in which the first and second electric fields are generated.
Optionally, the frequency of the alternating current is above 10 hertz (Hz). It was found experimentally that the response time of the quantum dot material 102 and the quantum dot particles 102b under the electric field is less than 100 milliseconds (ms). Therefore, when the first electric field and the second electric field are alternating current electric fields, setting the frequency of alternating current applied to the electrodes to 10Hz or higher enables the quantum dot material 102 to respond in the electric fields. Specifically, the frequency of the alternating current may be 10Hz, 12Hz, 15Hz, 20Hz, 22Hz, or 25 Hz.
And step 16, driving the quantum dot particles 102b to deposit on the pixel electrode 103 by the second electric field, and forming a quantum dot film 105 on the pixel electrode 103 to obtain the quantum dot device.
The second electric field provides a force for the quantum dot particles 102b to deposit on the pixel electrode 103, and can promote the quantum dot particles 102b to deposit on the pixel electrode 103 in the quantum dot solution 101.
Specifically, referring to fig. 4, fig. 4 is a density test result of the quantum dot device provided in the embodiment of the present application. The abscissa in FIG. 4 is the electric field intensity E in units of V/μm. The ordinate in FIG. 4 is the density ρ in grams per square centimeter (g/cm)3). As shown in fig. 4, the density ρ of the deposited quantum dot thin film 105 varies at different electric field strengths E. As the electric field strength E increases, the density ρ of the deposited quantum dot film 105 also increases. The film has a greater packing density at high electric field strengths, which provides a favorable guarantee of improved photoelectric properties of the quantum dot film 105. And quantum dot films 105 with different performances can be obtained by changing the deposition voltage, so that the QLED performance can be regulated and controlled.
The electric field strength of the second electric field is 10V/mum or more to obtain a denser quantum dot thin film 105. Specifically, the electric field strength of the second electric field may be 10V/μm, 20V/μm, 30V/μm, 40V/μm, or 50V/μm. Of course, the above values are merely exemplary, and the electric field strength of the second electric field may be more than 10V/μm, which is not limited in the present application.
Optionally, the thickness of the quantum dot thin film 105 is between 5nm and 50 nm. Specifically, the thickness of the quantum dot thin film 105 may be between 5nm, 10nm, 20nm, 30nm, 40nm, or 50 nm. In order to secure the light emitting effect of the quantum dot thin film 105, the thickness of the quantum dot thin film 105 is set to 5nm to 50 nm. If the particle size is less than 5nm, sufficient light emission intensity cannot be generated, and the display effect of the quantum dot device after being applied to a panel cannot be ensured. If it is larger than 50nm, the thickness of the panel will be affected.
Optionally, the concentration of the quantum dot solution 101 is between 1 milligram per milliliter (mg/mL) and 300 mg/mL. Further, the concentration of the quantum dot solution 101 is between 1mg/mL and 50 mg/mL. Specifically, the concentration of the quantum dot solution 101 may be 1mg/mL, 5mg/mL, 10mg/mL, 15mg/mL, 20mg/mL, 25mg/mL, 30mg/mL, 35mg/mL, 40mg/mL, 45mg/mL, 50mg/mL, 100mg/mL, 150mg/mL, 200mg/mL, 250mg/mL, or 300 mg/mL.
Since the thickness of the quantum dot thin film 105 will significantly affect the light emitting effect, the concentration of the quantum dot solution 101 needs to be adjusted to ensure a better light emitting effect. It is obvious that the higher the concentration of the quantum dot solution 101 is, the higher the quantum dot material 102 content in the quantum dot solution 101 is, and the quantum dot thin film 105 with a higher thickness can be formed. In addition, the thickness of the quantum dot thin film 105 is also related to the electric field intensity of the second electric field. The higher the electric field strength of the second electric field, the greater the density of the deposited quantum dot thin film 105. Therefore, when the quantum dot thin film 105 having the same thickness is formed, the quantum dot solution 101 having a higher concentration is required as the electric field intensity is higher.
In the method for manufacturing the quantum dot device, the quantum dot material 102 is driven to move by the first electric field, and the mutual repulsion between the quantum dot material and the quantum dot material is overcome to approach the quantum dot material, and collision occurs, so that the surface ligand 102a falls off. After the surface ligands 102a of the quantum dot material 102 fall off, the second electric field further drives the quantum dot particles 102b to move and gather on the electrode with the opposite electric property. Due to the action of the electric field force vertical to the surface of the electrode, the quantum dot particles 102b are tightly packed in the film forming process, and the gaps between the quantum dot particles 102b are further reduced, so that the quantum dot film 105 with extremely high density is obtained. The absence of the ligand 102a in the quantum dot thin film 105 makes the inorganic component thereof more and the quantum dot pitch smaller, and the density of the quantum dot thin film 105 becomes larger, and even a quantum dot thin film 105 in a crystal state is obtained. The carrier transfer rate between the quantum dots can be improved. When the quantum dot film 105 provided by the embodiment of the application is applied to the QLED, the luminous efficiency and stability of the QLED are improved.
The above detailed description is made on the method for manufacturing the quantum dot device provided by the embodiment of the present application, and a specific example is applied in the present application to explain the principle and the implementation manner of the present application, and the description of the above embodiment is only used to help understanding the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A manufacturing method of a quantum dot device is characterized by comprising the following steps:
providing a quantum dot solution and an array substrate, wherein the quantum dot solution comprises a quantum dot material and a solvent, and the array substrate comprises a pixel electrode;
immersing the pixel electrode in the quantum dot solution;
applying a first electric field to the quantum dot solution;
the first electric field drives the quantum dot material to move and collide, so that at least part of ligands of the quantum dot material fall off to obtain quantum dot particles;
applying a second electric field to the quantum dot solution;
and the second electric field drives the quantum dot particles to be deposited to the pixel electrode, and a quantum dot film is formed on the pixel electrode, so that the quantum dot device is obtained.
2. The method of claim 1, wherein the quantum dot solution is further immersed in an electric field electrode, and the applying the first electric field to the quantum dot solution comprises:
energizing the electric field electrode and the pixel electrode;
and a voltage difference is formed between the electric field electrode and the pixel electrode so as to apply a first electric field to the quantum dot solution.
3. The method of claim 1, wherein the quantum dot solution is further immersed in an electric field electrode, and the applying the second electric field to the quantum dot solution comprises:
energizing the electric field electrode and the pixel electrode;
and a voltage difference is formed between the electric field electrode and the pixel electrode so as to apply a second electric field to the quantum dot solution.
4. The method of claim 2 or 3, wherein said energizing the electric field electrode and the pixel electrode comprises:
and electrifying alternating current to the electric field electrode and the pixel electrode, or electrifying direct current to the electric field electrode and the pixel electrode.
5. The method of claim 4, wherein the frequency of the alternating current is 10Hz or higher.
6. The method of claim 1, wherein the first electric field has an electric field strength of 10V/μm or more, and the second electric field has an electric field strength of 10V/μm or more.
7. The method of claim 1, wherein the quantum dot thin film has a thickness of 5nm to 50 nm.
8. The method of claim 1, wherein the ligand comprises a combination of one or more of an amine, an acid, a thiol, and an organophosphorus.
9. The method of claim 1, wherein the solvent is an organic solvent having a boiling point of less than 200 ℃.
10. The method of claim 1, wherein the concentration of the quantum dot solution is between 1mg/mL and 300 mg/mL.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102431964A (en) * | 2011-12-15 | 2012-05-02 | 北京石油化工学院 | Method for controllable generation of quantum dots or quantum wires |
| CN106531891A (en) * | 2016-11-11 | 2017-03-22 | 苏州大学 | Method for depositing organic inorganic hybrid perovskite quantum dot film by using electric field force and construction method for lighting device thereof |
| WO2020170370A1 (en) * | 2019-02-20 | 2020-08-27 | シャープ株式会社 | Method for manufacturing light-emitting device |
| CN112736214A (en) * | 2021-01-19 | 2021-04-30 | Tcl华星光电技术有限公司 | Preparation method of light emitting layer and display panel |
| CN113025308A (en) * | 2019-12-25 | 2021-06-25 | Tcl集团股份有限公司 | Quantum dot film, quantum dot light-emitting diode and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11024820B2 (en) * | 2019-08-08 | 2021-06-01 | Sharp Kabushiki Kaisha | Photo-patterned emissive layer containing passivated quantum dots, arrangement of light-emitting devices including same, and method of making same |
-
2021
- 2021-08-17 CN CN202110941251.XA patent/CN113745440B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102431964A (en) * | 2011-12-15 | 2012-05-02 | 北京石油化工学院 | Method for controllable generation of quantum dots or quantum wires |
| CN106531891A (en) * | 2016-11-11 | 2017-03-22 | 苏州大学 | Method for depositing organic inorganic hybrid perovskite quantum dot film by using electric field force and construction method for lighting device thereof |
| WO2020170370A1 (en) * | 2019-02-20 | 2020-08-27 | シャープ株式会社 | Method for manufacturing light-emitting device |
| CN113025308A (en) * | 2019-12-25 | 2021-06-25 | Tcl集团股份有限公司 | Quantum dot film, quantum dot light-emitting diode and preparation method thereof |
| CN112736214A (en) * | 2021-01-19 | 2021-04-30 | Tcl华星光电技术有限公司 | Preparation method of light emitting layer and display panel |
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