WO2020087801A1 - Micro-component transfer device and manufacturing method therefor - Google Patents

Micro-component transfer device and manufacturing method therefor Download PDF

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Publication number
WO2020087801A1
WO2020087801A1 PCT/CN2019/075410 CN2019075410W WO2020087801A1 WO 2020087801 A1 WO2020087801 A1 WO 2020087801A1 CN 2019075410 W CN2019075410 W CN 2019075410W WO 2020087801 A1 WO2020087801 A1 WO 2020087801A1
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WIPO (PCT)
Prior art keywords
silicon
electrode
metal wiring
transfer device
substrate
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PCT/CN2019/075410
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French (fr)
Chinese (zh)
Inventor
陈博
邢汝博
郭恩卿
李晓伟
韦冬
Original Assignee
昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Application filed by 昆山工研院新型平板显示技术中心有限公司, 昆山国显光电有限公司 filed Critical 昆山工研院新型平板显示技术中心有限公司
Priority to KR1020217016394A priority Critical patent/KR102518916B1/en
Publication of WO2020087801A1 publication Critical patent/WO2020087801A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the present application relates to the technical field of micro-elements, in particular to a micro-element transfer device and a manufacturing method thereof.
  • micro-LEDs In the devices used by people in daily life, the miniaturization of components has become one of the development trends.
  • the application of micro-LEDs in display devices that is, the integration of multiple micro-sized light-emitting diodes (LED, Liquid) on the display panel Emitting Diode) has become one of the current development directions of display technology.
  • micro-LEDs have extremely high luminous efficiency and longevity, so more and more companies have begun to develop micro-LED display panels, and micro-LEDs are expected to become the next-generation display technology.
  • the present application provides a micro-element transfer device and a manufacturing method thereof to solve the problem that the micro-element batch transfer cannot be realized in the prior art.
  • the transfer device includes: a substrate, metal wiring, and a plurality of silicon electrodes.
  • the substrate includes a flat surface; the metal wiring, formed on the flat surface of the substrate, includes a plurality of electrode driving units. Silicon electrodes are formed on the side of the metal wiring facing away from the substrate, and each silicon electrode is provided corresponding to an electrode driving unit, and is driven by the electrode driving unit to pick up or release micro-elements.
  • the metal wiring includes a single-layer metal layer including at least one of Cr, Cu, Au, Ni, W, Mo, Ti, and TiN, and has a thickness of 0.1 to 1 ⁇ m.
  • the metal wiring includes an adhesive metal layer and a bonding metal layer that are sequentially stacked on the substrate, and a silicon electrode is formed on the side of the bonding metal layer facing away from the substrate.
  • the material of the metal adhesion layer includes metal Ti or TiN, and the thickness is 0.1-1 ⁇ m.
  • the material of the bonding metal layer includes Au, and the thickness is 0.1-2 ⁇ m.
  • the electrode driving unit includes an electrode bonding area and a driving wire area; a silicon electrode is formed on a side of the electrode bonding area facing away from the substrate.
  • a plurality of electrode driving unit arrays are arranged, and a plurality of silicon electrode arrays are arranged.
  • the metal wiring further includes a driving connecting piece connected to a plurality of electrode driving units; the driving connecting piece is used to connect with an external circuit, so that the external circuit controls the electrode driving unit through the driving connecting piece.
  • the surface of the silicon electrode is covered with a dielectric layer.
  • the silicon electrode is a low-resistance silicon electrode.
  • an insulating layer is formed on the substrate, and the metal wiring is formed on the insulating layer.
  • the thickness of the substrate is 250-1000 ⁇ m, and the thickness of the insulating layer is 0.1-3 ⁇ m.
  • Manufacturing methods include:
  • the substrate including a flat surface
  • the metal wiring including a plurality of electrode driving units
  • a plurality of silicon electrodes are formed on the metal wiring, and each of the silicon electrodes is provided corresponding to an electrode driving unit.
  • forming a plurality of silicon electrodes on the metal wiring includes:
  • the silicon electrode layer is patterned to form the plurality of silicon electrodes.
  • forming a plurality of silicon electrodes on the metal wiring includes:
  • the silicon wafer includes a substrate layer and a top silicon layer;
  • a silicon wafer forming a plurality of the silicon electrodes is bonded to a substrate forming a metal wiring, and the silicon electrode is formed on the metal wiring.
  • the manufacturing method further includes: laying a dielectric layer on the surface of the silicon electrode, and forming a driving connection piece connected to an external circuit on the transfer device by exposing at least part of the metal wiring.
  • the micro-element transfer device of the present application includes a substrate, metal wiring, and a plurality of silicon electrodes.
  • the metal wiring is formed on the surface of the substrate and includes a plurality of electrode driving units.
  • Silicon electrodes are formed on the side of the metal wiring facing away from the substrate, and each silicon electrode is provided corresponding to an electrode driving unit, and is driven by the electrode driving unit to pick up or release micro-elements.
  • the transfer device of the present application adopts electrostatic adsorption of micro-elements to realize mass transfer of micro-elements and improve transfer efficiency.
  • FIG. 1 is a schematic structural view of an embodiment of a micro-element transfer device of the present application.
  • FIG. 2 is a schematic structural diagram of another embodiment of a micro-element transfer device of the present application.
  • FIG. 3 is a schematic structural diagram of an electrode driving unit in the embodiment of the micro-element transfer device shown in FIG. 2;
  • FIG. 4 is another schematic structural view of the electrode driving unit in the embodiment of the micro-element transfer device shown in FIG. 2;
  • FIG. 5 is a schematic flowchart of an embodiment of a method for manufacturing a micro-element transfer device of the present application
  • FIG. 6 is a schematic flow chart of an embodiment of forming a plurality of silicon electrodes on metal wiring in the manufacturing method shown in FIG. 5;
  • FIG. 7 is a schematic process diagram of an embodiment of the manufacturing method shown in FIG. 6;
  • FIG. 8 is a schematic flowchart of another embodiment of forming a plurality of silicon electrodes on metal wiring in the manufacturing method shown in FIG. 5;
  • FIG. 9 is a schematic process diagram of an embodiment of the manufacturing method shown in FIG. 8.
  • micro-components include micro-LEDs, Micro-OLEDs, or other micro-sized electronic components.
  • the transfer device of the present application is used to realize the transfer of micro-elements. Taking the micro light-emitting diode display panel as an example, the transfer device of the present application can realize the selective transfer of batches of micro-light-emitting diodes. Other micro-elements that have the same micro-features as the micro-light-emitting diodes can use the transfer device of the present application to achieve mass selective transfer. Miniature light-emitting diodes are the microelements described in this application, which are used to realize the self-luminescence of pixels in the display panel. A microelement is used as a pixel.
  • the number of pixels is generally tens of thousands, so they There are also tens of thousands of micro-elements installed on the display panel.
  • the micro-elements are first displayed on the growth substrate, and then transferred from the growth substrate to the driving substrate to form a display panel.
  • the transfer device proposed in this application uses electrostatic adsorption of micro-elements, which are applied to the electrodes
  • the voltage control electrode selectively picks up or releases the micro-elements, realizes mass transfer of the micro-elements, and improves the production efficiency of the display panel.
  • FIG. 1 is a schematic structural diagram of an embodiment of a micro-device transfer device of the present application.
  • the micro-element transfer device 100 of this embodiment includes a substrate 11, a metal wiring 12, and a plurality of silicon electrodes 13.
  • the substrate 11 is used to carry the metal wiring 12 and the silicon electrode 13 for electrostatic transfer.
  • the material selected may be a transparent or non-transparent material, such as silicon or Pyrex glass.
  • the substrate 11 has a flat structure, and the surface on which the metal wiring is provided is a flat surface 111.
  • the metal wiring 12 includes a plurality of electrode driving units, and is formed on the flat surface 111 of the substrate 11. That is, the metal wiring 12 is formed on the flat surface 111 of the substrate 11 to form a plurality of electrode driving units. Since the metal wiring 12 is formed on the flat surface 111, it is also formed as a flat layer. In the embodiment, the metal wiring 12 formed on the plane can be more refined.
  • the metal wiring 12 constitutes an electric transmission circuit, which can realize individual driving of each electrode.
  • the silicon electrodes 13 are formed on the side of the metal wiring 12 facing away from the substrate 11, and each silicon electrode 13 is provided corresponding to an electrode driving unit, and is driven by the electrode driving unit to pick up or release micro-elements.
  • the silicon electrode 13 formed on the metal wiring 12 can simultaneously serve as a bump structure corresponding to the micro-element and an electrostatic electrode that realizes electrostatic attraction.
  • the silicon electrode 13 is made of silicon material, and can be directly formed on the flat metal wiring 12 by wafer bonding.
  • the bump structure or the electrostatic electrode If other materials are used to make the bump structure or the electrostatic electrode, it is necessary to provide an uneven structure, and the uneven structure A metal wiring is formed on it to form an electrostatic electrode, and a bump structure needs to be provided on the electrostatic electrode to correspondingly absorb the micro-element.
  • the silicon electrode 13 is directly formed on the flat metal wiring 12, and a high electrostatic electrode can be provided, thereby generating a certain strength of adsorption force to the micro-element, and a certain height of the electrostatic electrode electrostatically adsorbs the adjacent micro-element Less affected.
  • the silicon electrode used in this embodiment not only has a simple structure and a simple process, but also is more efficient and stable in the adsorption of micro-elements.
  • the transfer device of this embodiment constitutes an electrode driving unit by metal wiring to control each silicon electrode, and when a voltage is applied to the metal wiring, that is, to the electrode driving unit, the silicon electrode forms an electrostatic attraction to pick up the micro-elements.
  • Each electrode driving unit of the transfer device of this embodiment can be controlled independently, that is, each silicon electrode can be driven independently, and then selective pick-up or release of micro-elements can be achieved.
  • FIG. 2 is a schematic structural diagram of another embodiment of the micro-element transfer device of the present application.
  • the transfer device 200 includes a substrate 21, metal wiring 22, a plurality of silicon electrodes 23, an insulating layer 24, and a dielectric layer 25.
  • the description of the embodiment shown in FIG. 1 can be applied to the embodiment shown in FIG. 2 and will not be repeated here.
  • the substrate 21 has a thickness of 250-1000 ⁇ m, and a flat insulating layer 24 is further formed on the surface, and the metal wiring 22 is formed on the surface of the insulating layer 24.
  • the insulating layer 24 may be made of silicon oxide or nitride Materials such as silicon or aluminum oxide are deposited to facilitate the deposition of the metal wiring 22 and to prevent the substrate 21 of silicon material from affecting the metal wiring 22.
  • the thickness of the insulating layer 24 may be 0.1 to 3 ⁇ m.
  • the metal wiring 22 can be formed by using a single layer of metal, specifically using microelectronic metal materials, such as Cr, Cu, Au, Ni, W, Mo, Ti, TiN, and the thickness can be 0.1-1 ⁇ m.
  • the metal wiring 22 may also be formed by multi-layer metal manufacturing.
  • the metal wiring 22 includes an adhesive metal layer and a bonding metal layer that are sequentially stacked on the substrate, wherein the adhesive metal layer uses metals Ti, TiN, etc. that are easily adhered to the insulating layer 24, and the thickness may be 0.1 ⁇ 1 ⁇ m, and the bonding metal layer is made of Au, which is easy to bond with the silicon electrode.
  • the thickness can be 0.1 ⁇ 2 ⁇ m.
  • the silicon electrode 23 is also formed on the side of the bonding metal layer facing away from the substrate 21.
  • the silicon electrode 23 is formed on the side of the bonding metal layer facing away from the substrate.
  • the silicon electrode 23 may be a single electrode or a double electrode.
  • the metal wiring 22 adopts different designs, that is, the electrode driving unit 221 formed accordingly adopts different structures.
  • FIG. 3 is a schematic structural diagram of an electrode driving unit in the embodiment of the micro-element transfer device shown in FIG. 2
  • FIG. 4 is an electrode driving unit in the embodiment of the micro-element transfer device shown in FIG. Another structural diagram.
  • the structure of the electrode driving unit in FIGS. 3 and 4 corresponds to a single electrode and a double electrode, respectively.
  • the electrode driving unit 221 in FIG. 3 includes a driving wire region 2211 and an electrode bonding region 2212; and the electrode driving unit 221 in FIG. 4 includes Two electrode driving lines 2211 and two electrode bonding regions 2212.
  • the driving wire region 2211 is used to connect to the driving circuit, and the electrode bonding region 2212 is used to connect to the silicon electrode 23. Therefore, in this embodiment, the adhesive metal layer mainly constitutes the driving wire region 2211, and the bonding metal layer The electrode bonding region 2212 is constituted.
  • the silicon electrode 23 is formed on the side of the electrode bonding region 2212 facing away from the substrate 21.
  • this application also adopts the design of array arrangement for the transfer of micro elements arranged in an array, that is, multiple electrode driving units 221 in the metal wiring 22
  • the array is arranged, and the silicon electrodes 23 formed on the metal wiring 22 are also arranged in an array.
  • the formed metal wiring 22 further includes a driving connection piece 222, which is connected between the plurality of electrode driving units 221 and the external circuit, so that the external circuit passes through the driving connection piece 222Control electrode drive unit 221.
  • a dielectric layer 25 is further laid on the surface of the silicon electrode 23, which can effectively prevent charges from escaping.
  • the materials of the insulating layer 24 and the dielectric layer 25 may be the same, which simplifies the manufacturing process. Their materials can use insulating media such as silicon dioxide, silicon nitride and aluminum oxide, and the thickness is set to 0.1 ⁇ 2 ⁇ m.
  • the silicon electrode 23 can select low-resistance silicon as the electrode, which has better conductivity.
  • the metal wiring of the mobile device is further improved. All metal wiring is provided on the surface of the flat insulating layer, which can not only control each silicon electrode individually, but also facilitate the production of the process.
  • the micro-element transfer device of this application mainly uses a micro-motor system (Micro-Electro-Mechanical System, MEMS) process.
  • MEMS Micro-Electro-Mechanical System
  • the internal structure is generally in the order of micrometers or even nanometers. It is an independent intelligent system.
  • FIG. 5 is a schematic flowchart of an embodiment of a manufacturing method of a micro-element transfer device of the present application.
  • a single crystal silicon wafer may be selected as the substrate, and its thickness is 250-1000 ⁇ m.
  • An insulating layer can be formed on a flat surface of the substrate.
  • An insulating material such as silicon dioxide or silicon nitride can be deposited.
  • the thickness of the insulating layer can be selected from 0.1 to 3 ⁇ m.
  • Metal wiring is formed on the surface of the insulating layer, and the metal wiring includes a plurality of electrode driving units.
  • the metal wiring can be manufactured by a sputtering process.
  • the metal wiring can be a single-layer metal or a multi-layer metal.
  • the metal layer can be sputtered and adhered on the surface of the insulating layer as the wiring metal.
  • the material can be Ti and TiN with a thickness of 0.1 ⁇ 2 microns; then the bonding process is formed by the sputtering process.
  • the material can be Au with a thickness of 0.1 to 2 microns.
  • photolithography is etched to pattern metal wiring to form an electrode driving unit and a driving connection piece.
  • FIG. 6 is a schematic flowchart of an embodiment of forming a plurality of silicon electrodes on metal wiring in the manufacturing method shown in FIG. 5, and FIG. 7 is an embodiment of the manufacturing method shown in FIG. 6 Schematic diagram of the process.
  • S141 Deposit and form a silicon electrode layer on the metal wiring.
  • CVD Chemical Vapor Deposition
  • ion implantation is deposited on the metal wiring and the substrate to form a silicon electrode layer, specifically using low resistance silicon.
  • S143 Patterning the silicon electrode layer to form multiple silicon electrodes.
  • the silicon electrode layer 20 may be etched using photolithography, corresponding to the electrode driving unit finally forming a patterned bumped silicon electrode.
  • This method mainly adopts deposition and etching processes to complete the silicon electrode structure, and the process is simple.
  • FIG. 8 is a schematic flowchart of another embodiment of forming a plurality of silicon electrodes on metal wiring in the manufacturing method shown in FIG. 5.
  • 9 is a schematic process diagram of an embodiment of the manufacturing method shown in FIG. 8.
  • S142 Provide a silicon wafer, which includes a substrate layer and a top silicon layer.
  • the silicon wafer 30 may select a silicon-on-insulation (SOI) material, which specifically includes a top silicon layer and a substrate layer, and a buried oxygen layer therebetween.
  • SOI silicon-on-insulation
  • the silicon wafer of this structure reduces parasitic capacitance and has lower power consumption.
  • the thickness of the top silicon layer is selected between 1-100 microns, and the resistivity is less than 1 ohm per centimeter.
  • the top silicon is etched to form a plurality of silicon electrodes, the etching depth is 1-100 microns, and the etching depth is finally used as the height of the obtained silicon electrode.
  • Wafer bonding the silicon wafer 30 to the substrate For example, if the bonding metal of the metal wiring on the substrate uses gold, this step can be completed by a bonding method such as gold silicon eutectic bonding. Then, the substrate layer and the buried oxygen layer of the silicon wafer 30 are removed by an etching process to finally form bump silicon electrodes on the substrate.
  • a bonding method such as gold silicon eutectic bonding.
  • the silicon electrode is mainly manufactured through wafer bonding and etching processes, and the process is simple.
  • step S15 is further performed in this embodiment.
  • S15 Lay a dielectric layer on the surface of the silicon electrode, and form a driving connection piece on the transfer device.
  • a dielectric layer is laid on the surface of the silicon electrode.
  • dense aluminum oxide can be grown by atomic layer deposition, and the thickness can be 0.1-2 microns.
  • Aluminum oxide is a high-hardness compound and has no conductivity. It is an insulating medium with both protective effects.
  • a portion of the dielectric layer can be etched using photolithography to expose part of the metal wiring as a driving connection piece that can be connected to an external circuit.
  • This embodiment discloses a method for manufacturing a micro-element transfer device.
  • the method is simple in operation and simple in process. It is easy to manufacture in large quantities in actual production and has high practicality and usability.

Abstract

A micro-component transfer device and a manufacturing method therefor. The transfer device (100) comprises a base plate (11), metal wiring (12), and multiple silicon electrodes (13). The metal wiring is formed on a flat surface of the base plate and comprises multiple electrode driving units. The silicon electrodes are formed on the side of the metal wiring facing away from the base plate, and each of the silicon electrodes corresponds to one electrode driving unit, and is driven by the electrode driving unit to pick up or release a micro-component. The transfer device can transfer a large number of micro-components by means of electrostatic adsorption, thereby greatly improving the transfer efficiency.

Description

微型元件转移装置及其制造方法Micro-element transfer device and manufacturing method thereof
【技术领域】【Technical Field】
本申请涉及微型元件相关技术领域，特别是涉及一种微型元件转移装置及其制造方法。The present application relates to the technical field of micro-elements, in particular to a micro-element transfer device and a manufacturing method thereof.
【背景技术】【Background technique】
人们日常生活所使用的设备中，元件微小化成为发展趋势之一，例如在显示设备中应用微型发光二极管（Micro-LED），即在显示面板上集成多个微小尺寸的发光二极管（LED，Liquid Emitting Diode），成为当前显示技术的发展方向之一。具体由于微型发光二极管具有极高的发光效率和寿命，因此越来越多的企业开始研发微型发光二极管显示面板，微型发光二极管有希望成为下一代显示技术。In the devices used by people in daily life, the miniaturization of components has become one of the development trends. For example, the application of micro-LEDs in display devices, that is, the integration of multiple micro-sized light-emitting diodes (LED, Liquid) on the display panel Emitting Diode) has become one of the current development directions of display technology. Specifically, micro-LEDs have extremely high luminous efficiency and longevity, so more and more companies have begun to develop micro-LED display panels, and micro-LEDs are expected to become the next-generation display technology.
对于当前的微型发光二极管显示面板的制造，由于制备工艺的限制，其无法实现微型发光二极管的高效批量转移。For the manufacture of current miniature light-emitting diode display panels, due to the limitation of the manufacturing process, it cannot achieve efficient mass transfer of miniature light-emitting diodes.
【发明内容】[Invention content]
本申请提供一种微型元件的转移装置及其制造方法，以解决现有技术中无法实现微型元件批量转移的问题。The present application provides a micro-element transfer device and a manufacturing method thereof to solve the problem that the micro-element batch transfer cannot be realized in the prior art.
为解决上述技术问题，本申请提出一种微型元件的转移装置。转移装置包括：基板、金属布线和多个硅电极。基板包括平坦表面；金属布线，形成于基板的平坦表面，包括多个电极驱动单元。硅电极，形成于金属布线背对基板的一侧，每一硅电极对应一电极驱动单元设置，被电极驱动单元驱动以拾取或释放微型元件。In order to solve the above technical problems, the present application proposes a micro-element transfer device. The transfer device includes: a substrate, metal wiring, and a plurality of silicon electrodes. The substrate includes a flat surface; the metal wiring, formed on the flat surface of the substrate, includes a plurality of electrode driving units. Silicon electrodes are formed on the side of the metal wiring facing away from the substrate, and each silicon electrode is provided corresponding to an electrode driving unit, and is driven by the electrode driving unit to pick up or release micro-elements.
所述金属布线包括单层金属层，所述单层金属层包括Cr、Cu、Au、Ni、W、Mo、Ti、TiN中的至少一种，其厚度为0.1~1μm。The metal wiring includes a single-layer metal layer including at least one of Cr, Cu, Au, Ni, W, Mo, Ti, and TiN, and has a thickness of 0.1 to 1 μm.
其中，金属布线包括依次层叠于基板上的粘附金属层和键合金属层，硅电极形成于键合金属层背对基板的一侧上。Wherein, the metal wiring includes an adhesive metal layer and a bonding metal layer that are sequentially stacked on the substrate, and a silicon electrode is formed on the side of the bonding metal layer facing away from the substrate.
所述粘附金属层的材料包括金属Ti或TiN，厚度为0.1~1μm。The material of the metal adhesion layer includes metal Ti or TiN, and the thickness is 0.1-1 μm.
所述键合金属层的材料包括Au，厚度为0.1~2μm。The material of the bonding metal layer includes Au, and the thickness is 0.1-2 μm.
其中，电极驱动单元包括电极键合区和驱动导线区；硅电极形成于电极键合区背对基板的一侧上。The electrode driving unit includes an electrode bonding area and a driving wire area; a silicon electrode is formed on a side of the electrode bonding area facing away from the substrate.
其中，多个电极驱动单元阵列排布，多个硅电极阵列排布。Among them, a plurality of electrode driving unit arrays are arranged, and a plurality of silicon electrode arrays are arranged.
其中，金属布线进一步包括驱动连接片，连接于多个电极驱动单元；驱动连接片用于与外部电路之间连接，以使得外部电路通过驱动连接片控制电极驱动单元。Wherein, the metal wiring further includes a driving connecting piece connected to a plurality of electrode driving units; the driving connecting piece is used to connect with an external circuit, so that the external circuit controls the electrode driving unit through the driving connecting piece.
其中，硅电极的表面铺设有电介质层。Among them, the surface of the silicon electrode is covered with a dielectric layer.
其中，硅电极为低阻硅电极。Among them, the silicon electrode is a low-resistance silicon electrode.
其中，所述基板上形成有绝缘层，所述金属布线形成与所述绝缘层上。Wherein, an insulating layer is formed on the substrate, and the metal wiring is formed on the insulating layer.
其中，所述基板的厚度为250~1000μm，所述绝缘层的厚度为0.1~3μm。Wherein, the thickness of the substrate is 250-1000 μm, and the thickness of the insulating layer is 0.1-3 μm.
为解决上述技术问题，本申请提出一种微型元件转移装置的制造方法。制造方法包括：In order to solve the above technical problems, the present application proposes a method for manufacturing a micro-element transfer device. Manufacturing methods include:
提供一基板，所述基板包括平坦表面；Providing a substrate, the substrate including a flat surface;
在所述基板的平坦表面形成金属布线，所述金属布线包括多个电极驱动单元；Forming a metal wiring on the flat surface of the substrate, the metal wiring including a plurality of electrode driving units;
在所述金属布线上形成多个硅电极，每一所述硅电极对应一电极驱动单元设置。A plurality of silicon electrodes are formed on the metal wiring, and each of the silicon electrodes is provided corresponding to an electrode driving unit.
其中，所述在所述金属布线上形成多个硅电极，包括：Wherein, forming a plurality of silicon electrodes on the metal wiring includes:
在所述金属布线上沉积形成硅电极层；Depositing and forming a silicon electrode layer on the metal wiring;
对所述硅电极层进行图案化处理，以形成所述多个硅电极。The silicon electrode layer is patterned to form the plurality of silicon electrodes.
其中，所述在所述金属布线上形成多个硅电极，包括：Wherein, forming a plurality of silicon electrodes on the metal wiring includes:
提供一硅片，所述硅片包括衬底层和顶层硅；Providing a silicon wafer, the silicon wafer includes a substrate layer and a top silicon layer;
对所述顶层硅进行图案化处理，以形成所述多个硅电极；Patterning the top silicon layer to form the plurality of silicon electrodes;
将形成多个所述硅电极的硅片与形成金属布线的基板键合，使所述硅电极形成于所述金属布线上。A silicon wafer forming a plurality of the silicon electrodes is bonded to a substrate forming a metal wiring, and the silicon electrode is formed on the metal wiring.
所述制造方法，进一步包括：在所述硅电极表面铺设电介质层，并在所述转移装置上通过露出至少部分金属布线形成与外部电路连接的驱动连接片。本申请微型元件转移装置包括基板、金属布线和多个硅电极。金属布线，形成于基板的表面，包括多个电极驱动单元。硅电极，形成于金属布线背对基板的一侧，每一硅电极对应一电极驱动单元设置，被电极驱动单元驱动以拾取或释放微型元件。本申请的转移装置采用静电吸附微型元件实现了微型元件的大批量转移，提高了转移效率。The manufacturing method further includes: laying a dielectric layer on the surface of the silicon electrode, and forming a driving connection piece connected to an external circuit on the transfer device by exposing at least part of the metal wiring. The micro-element transfer device of the present application includes a substrate, metal wiring, and a plurality of silicon electrodes. The metal wiring is formed on the surface of the substrate and includes a plurality of electrode driving units. Silicon electrodes are formed on the side of the metal wiring facing away from the substrate, and each silicon electrode is provided corresponding to an electrode driving unit, and is driven by the electrode driving unit to pick up or release micro-elements. The transfer device of the present application adopts electrostatic adsorption of micro-elements to realize mass transfer of micro-elements and improve transfer efficiency.
【附图说明】【Explanation】
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly explain the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without paying any creative work, other drawings can be obtained based on these drawings.
图1是本申请微型元件转移装置一实施例的结构示意图；1 is a schematic structural view of an embodiment of a micro-element transfer device of the present application;
图2是本申请微型元件转移装置另一实施例的结构示意图；2 is a schematic structural diagram of another embodiment of a micro-element transfer device of the present application;
图3是图2所示微型元件转移装置实施例中电极驱动单元的一种结构示意图；3 is a schematic structural diagram of an electrode driving unit in the embodiment of the micro-element transfer device shown in FIG. 2;
图4是图2所示微型元件转移装置实施例中电极驱动单元的另一种结构示意图；4 is another schematic structural view of the electrode driving unit in the embodiment of the micro-element transfer device shown in FIG. 2;
图5是本申请微型元件转移装置制造方法一实施例的流程示意图；5 is a schematic flowchart of an embodiment of a method for manufacturing a micro-element transfer device of the present application;
图6是图5所示的制造方法中在金属布线上形成多个硅电极一实施例的流程示意图；6 is a schematic flow chart of an embodiment of forming a plurality of silicon electrodes on metal wiring in the manufacturing method shown in FIG. 5;
图7是图6所示的制造方法一实施例的工艺过程示意图；7 is a schematic process diagram of an embodiment of the manufacturing method shown in FIG. 6;
图8是图5所示的制造方法中在金属布线上形成多个硅电极另一实施例的流程示意图；8 is a schematic flowchart of another embodiment of forming a plurality of silicon electrodes on metal wiring in the manufacturing method shown in FIG. 5;
图9是图8所示的制造方法一实施例的工艺过程示意图。9 is a schematic process diagram of an embodiment of the manufacturing method shown in FIG. 8.
【具体实施方式】【detailed description】
为使本领域的技术人员更好地理解本申请的技术方案，下面结合附图和具体实施方式对发明所提供的一种微型元件的转移装置及其制造方法做进一步详细描述。所述微型元件包括微型发光二极管（Micro-LED）、Micro-OLED或其他微小尺寸的电子元件。In order to enable those skilled in the art to better understand the technical solution of the present application, a micro-element transfer device and a manufacturing method thereof provided by the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The micro-components include micro-LEDs, Micro-OLEDs, or other micro-sized electronic components.
本申请的转移装置用于实现微型元件的转移，以微型发光二极管显示面板为例，本申请转移装置能够实现批量微型发光二极管的选择性转移。其他与微型发光二极管有相同微小特征的微型元件均可采用本申请的转移装置实现批量化选择性转移。微型发光二极管即本申请所述的微型元件在显示面板中用于实现像素的自发光，一个微型元件用作一个像素点，在当前显示面板中，像素点个数一般成千上万，因而对应在显示面板上所设置的微型元件也有成千上万个。一般来说，微型元件首先在生长基底上延展出，然后由生长基底转移到驱动基板上以构成显示面板，对于该转移过程，本申请所提出的转移装置采用静电吸附微型元件，通过给电极施加电压控制电极选择性的拾取或释放微型元件，实现微型元件的大量转移，提高了显示面板的生产效率。The transfer device of the present application is used to realize the transfer of micro-elements. Taking the micro light-emitting diode display panel as an example, the transfer device of the present application can realize the selective transfer of batches of micro-light-emitting diodes. Other micro-elements that have the same micro-features as the micro-light-emitting diodes can use the transfer device of the present application to achieve mass selective transfer. Miniature light-emitting diodes are the microelements described in this application, which are used to realize the self-luminescence of pixels in the display panel. A microelement is used as a pixel. In the current display panel, the number of pixels is generally tens of thousands, so they There are also tens of thousands of micro-elements installed on the display panel. Generally speaking, the micro-elements are first displayed on the growth substrate, and then transferred from the growth substrate to the driving substrate to form a display panel. For this transfer process, the transfer device proposed in this application uses electrostatic adsorption of micro-elements, which are applied to the electrodes The voltage control electrode selectively picks up or releases the micro-elements, realizes mass transfer of the micro-elements, and improves the production efficiency of the display panel.
具体来说，本申请的转移装置请参阅图1，图1是本申请微型元件转移装置一实施例的结构示意图。本实施例微型元件转移装置100包括基板11，金属布线12和多个硅电极13。Specifically, please refer to FIG. 1 for the transfer device of the present application. FIG. 1 is a schematic structural diagram of an embodiment of a micro-device transfer device of the present application. The micro-element transfer device 100 of this embodiment includes a substrate 11, a metal wiring 12, and a plurality of silicon electrodes 13.
基板11用作承载实现静电转移的金属布线12和硅电极13，其所选的材料可以是透明或非透明的材料，例如硅或派热克斯（Pyrex）玻璃。基板11为平坦结构，其设置金属布线的表面为平坦表面111，金属布线12包括多个电极驱动单元，形成于基板11的平坦表面111。即通过在基板11的平坦表面111进行金属布线12，以形成多个电极驱动单元，由于金属布线12形成在平坦表面111，其自身也形成为平坦层，因而相较于形成在凹凸表面，本实施例中形成在平面的金属布线12可以更为精细化。金属布线12构成了电传输电路，可实现对每个电极的单独驱动。The substrate 11 is used to carry the metal wiring 12 and the silicon electrode 13 for electrostatic transfer. The material selected may be a transparent or non-transparent material, such as silicon or Pyrex glass. The substrate 11 has a flat structure, and the surface on which the metal wiring is provided is a flat surface 111. The metal wiring 12 includes a plurality of electrode driving units, and is formed on the flat surface 111 of the substrate 11. That is, the metal wiring 12 is formed on the flat surface 111 of the substrate 11 to form a plurality of electrode driving units. Since the metal wiring 12 is formed on the flat surface 111, it is also formed as a flat layer. In the embodiment, the metal wiring 12 formed on the plane can be more refined. The metal wiring 12 constitutes an electric transmission circuit, which can realize individual driving of each electrode.
硅电极13形成于金属布线12背对基板11的一侧，每一个硅电极13对应一个电极驱动单元设置，被电极驱动单元驱动以拾取或释放微型元件。本实施例中，形成在金属布线12上的硅电极13可同时作为对应微型元件的凸点结构和实现静电吸取的静电电极。其中，硅电极13使用硅材料制作，可通过晶圆键合的方式直接形成在平坦的金属布线12上，若采用其他材料制作凸点结构或静电电极，则需要设置凹凸结构，并在凹凸结构上形成金属布线来构成静电电极，且还需在静电电极上设置凸点结构以对应吸取微型元件。The silicon electrodes 13 are formed on the side of the metal wiring 12 facing away from the substrate 11, and each silicon electrode 13 is provided corresponding to an electrode driving unit, and is driven by the electrode driving unit to pick up or release micro-elements. In this embodiment, the silicon electrode 13 formed on the metal wiring 12 can simultaneously serve as a bump structure corresponding to the micro-element and an electrostatic electrode that realizes electrostatic attraction. Among them, the silicon electrode 13 is made of silicon material, and can be directly formed on the flat metal wiring 12 by wafer bonding. If other materials are used to make the bump structure or the electrostatic electrode, it is necessary to provide an uneven structure, and the uneven structure A metal wiring is formed on it to form an electrostatic electrode, and a bump structure needs to be provided on the electrostatic electrode to correspondingly absorb the micro-element.
并且，硅电极13直接形成在平坦的金属布线12上，可设置构成较高的静电电极，从而对微型元件产生一定强度的吸附力，并且一定高度的静电电极对其相邻微型元件的静电吸附影响较小。而在凹凸结构上形成金属布线来构成静电电极的方式中，凹凸结构不能过高，否则不利于金属布线。因而本实施例中采用硅电极，不仅结构简单，工艺简单，而且在对微型元件的吸附上更为高效稳固。此外，本实施例的转移装置通过金属布线构成电极驱动单元，以控制每个硅电极，当向金属布线，即向电极驱动单元施加电压时，硅电极形成静电吸附力拾起微型元件。本实施例转移装置的每个电极驱动单元可单独控制，即每个硅电极可独立驱动，继而可实现选择性拾取或释放微型元件。In addition, the silicon electrode 13 is directly formed on the flat metal wiring 12, and a high electrostatic electrode can be provided, thereby generating a certain strength of adsorption force to the micro-element, and a certain height of the electrostatic electrode electrostatically adsorbs the adjacent micro-element Less affected. In the method of forming metal wiring on the uneven structure to form the electrostatic electrode, the uneven structure cannot be too high, otherwise it is not conducive to metal wiring. Therefore, the silicon electrode used in this embodiment not only has a simple structure and a simple process, but also is more efficient and stable in the adsorption of micro-elements. In addition, the transfer device of this embodiment constitutes an electrode driving unit by metal wiring to control each silicon electrode, and when a voltage is applied to the metal wiring, that is, to the electrode driving unit, the silicon electrode forms an electrostatic attraction to pick up the micro-elements. Each electrode driving unit of the transfer device of this embodiment can be controlled independently, that is, each silicon electrode can be driven independently, and then selective pick-up or release of micro-elements can be achieved.
基于图1所示转移装置实施例，本申请进一步提出另一实施例，可参阅图2，图2是本申请微型元件转移装置另一实施例的结构示意图。转移装置200包括基板21、金属布线22、多个硅电极23、绝缘层24、电介质层25。对图1所示实施例的描述内容均可应用于图2所示实施例，在此不再赘述。Based on the embodiment of the transfer device shown in FIG. 1, the present application further proposes another embodiment. Refer to FIG. 2, which is a schematic structural diagram of another embodiment of the micro-element transfer device of the present application. The transfer device 200 includes a substrate 21, metal wiring 22, a plurality of silicon electrodes 23, an insulating layer 24, and a dielectric layer 25. The description of the embodiment shown in FIG. 1 can be applied to the embodiment shown in FIG. 2 and will not be repeated here.
需要说明的是，本实施例中，基板21厚度为250~1000μm，其表面还形成有平坦的绝缘层24，而金属布线22则形成于绝缘层24表面，绝缘层24可由氧化硅、氮化硅或三氧化铝等材料沉积而成，以便于金属布线22的沉积，且避免硅材料的基板21影响金属布线22。绝缘层24的厚度可以为0.1~3μm。It should be noted that in this embodiment, the substrate 21 has a thickness of 250-1000 μm, and a flat insulating layer 24 is further formed on the surface, and the metal wiring 22 is formed on the surface of the insulating layer 24. The insulating layer 24 may be made of silicon oxide or nitride Materials such as silicon or aluminum oxide are deposited to facilitate the deposition of the metal wiring 22 and to prevent the substrate 21 of silicon material from affecting the metal wiring 22. The thickness of the insulating layer 24 may be 0.1 to 3 μm.
金属布线22可采用单层金属制造形成，具体采用微电子金属材料，如采用Cr、Cu、Au、Ni、W、Mo、Ti、TiN中的至少一种，其厚度可以为0.1~1μm。金属布线22也可采用多层金属制造形成。例如本实施例中金属布线22包括依次层叠于基板上的粘附金属层和键合金属层，其中，粘附金属层采用容易粘附于绝缘层24上的金属Ti、TiN等，厚度可以为0.1~1μm，而键合金属层则采用容易与硅电极实现键合的材料Au等，厚度可以为0.1~2μm。硅电极23也形成于键合金属层背对基板21的一侧上。The metal wiring 22 can be formed by using a single layer of metal, specifically using microelectronic metal materials, such as Cr, Cu, Au, Ni, W, Mo, Ti, TiN, and the thickness can be 0.1-1 μm. The metal wiring 22 may also be formed by multi-layer metal manufacturing. For example, in this embodiment, the metal wiring 22 includes an adhesive metal layer and a bonding metal layer that are sequentially stacked on the substrate, wherein the adhesive metal layer uses metals Ti, TiN, etc. that are easily adhered to the insulating layer 24, and the thickness may be 0.1 ~ 1μm, and the bonding metal layer is made of Au, which is easy to bond with the silicon electrode. The thickness can be 0.1 ~ 2μm. The silicon electrode 23 is also formed on the side of the bonding metal layer facing away from the substrate 21.
硅电极23形成于键合金属层背对基板的一侧。硅电极23可以是单电极也可以是双电极，对于不同类型的电极，金属布线22采用不同的设计，即所形成的电极驱动单元221相应采用不同结构。The silicon electrode 23 is formed on the side of the bonding metal layer facing away from the substrate. The silicon electrode 23 may be a single electrode or a double electrode. For different types of electrodes, the metal wiring 22 adopts different designs, that is, the electrode driving unit 221 formed accordingly adopts different structures.
具体请参阅图3和图4，图3是图2所示微型元件转移装置实施例中电极驱动单元的一种结构示意图，图4是图2所示微型元件转移装置实施例中电极驱动单元的另一种结构示意图。For details, please refer to FIGS. 3 and 4. FIG. 3 is a schematic structural diagram of an electrode driving unit in the embodiment of the micro-element transfer device shown in FIG. 2, and FIG. 4 is an electrode driving unit in the embodiment of the micro-element transfer device shown in FIG. Another structural diagram.
图3和图4的电极驱动单元结构分别对应单电极和双电极，图3中电极驱动单元221包括一个驱动导线区2211和一个电极键合区2212；而图4中的电极驱动单元221则包括两个电极驱动线2211和两个电极键合区2212。The structure of the electrode driving unit in FIGS. 3 and 4 corresponds to a single electrode and a double electrode, respectively. The electrode driving unit 221 in FIG. 3 includes a driving wire region 2211 and an electrode bonding region 2212; and the electrode driving unit 221 in FIG. 4 includes Two electrode driving lines 2211 and two electrode bonding regions 2212.
其中驱动导线区2211用于连接到驱动线路，而电极键合区2212则用于连接到硅电极23，因而本实施例中，粘附金属层主要构成驱动导线区2211，键合金属层则主要构成电极键合区2212。硅电极23即形成于电极键合区2212背对基板21的一侧上。The driving wire region 2211 is used to connect to the driving circuit, and the electrode bonding region 2212 is used to connect to the silicon electrode 23. Therefore, in this embodiment, the adhesive metal layer mainly constitutes the driving wire region 2211, and the bonding metal layer The electrode bonding region 2212 is constituted. The silicon electrode 23 is formed on the side of the electrode bonding region 2212 facing away from the substrate 21.
对于类似微型发光二极管显示面板中阵列排布的微型发光二极管，本申请对于阵列排布的微型元件的转移，也相应采用阵列排布的设计，即金属布线22中的多个电极驱动单元221采用阵列排布，形成于金属布线22上的硅电极23也采用阵列排布。For micro LEDs arranged in an array similar to a micro LED display panel, this application also adopts the design of array arrangement for the transfer of micro elements arranged in an array, that is, multiple electrode driving units 221 in the metal wiring 22 The array is arranged, and the silicon electrodes 23 formed on the metal wiring 22 are also arranged in an array.
为了实现对电极驱动单元221的电驱动，所形成的金属布线22中还包括驱动连接片222，驱动连接片222连接与多个电极驱动单元221与外部电路之间，使得外部电路通过驱动连接片222控制电极驱动单元221。In order to electrically drive the electrode driving unit 221, the formed metal wiring 22 further includes a driving connection piece 222, which is connected between the plurality of electrode driving units 221 and the external circuit, so that the external circuit passes through the driving connection piece 222Control electrode drive unit 221.
本实施例在硅电极23的表面还铺设有电介质层25，可有效防止电荷逸出。绝缘层24和电介质层25的材料可以是一样的，简化制作工艺。它们的材料可采用二氧化硅、氮化硅和三氧化二铝等绝缘介质，厚度设置为0.1~2μm。此外，硅电极23可以选择低阻硅作为电极，导电性能更佳。In this embodiment, a dielectric layer 25 is further laid on the surface of the silicon electrode 23, which can effectively prevent charges from escaping. The materials of the insulating layer 24 and the dielectric layer 25 may be the same, which simplifies the manufacturing process. Their materials can use insulating media such as silicon dioxide, silicon nitride and aluminum oxide, and the thickness is set to 0.1 ~ 2μm. In addition, the silicon electrode 23 can select low-resistance silicon as the electrode, which has better conductivity.
本实施例中对移动装置的金属布线做了进一步的改进，将所有的金属布线都设置在平坦的绝缘层表面，既能单独控制每一个硅电极，也方便了工艺的制作。In this embodiment, the metal wiring of the mobile device is further improved. All metal wiring is provided on the surface of the flat insulating layer, which can not only control each silicon electrode individually, but also facilitate the production of the process.
由于微型元件的体积很小，转移装置的硅电极也要设计得很小，本申请的微型元件转移装置主要是利用微电机***（Micro-Electro-Mechanical System，MEMS）工艺制作所得。MEMS是指尺寸在几毫米乃至更小的高科技装置，内部结构一般在微米甚至纳米量级，是一个独立的智能***。Due to the small size of the micro-element, the silicon electrode of the transfer device should also be designed to be very small. The micro-element transfer device of this application mainly uses a micro-motor system (Micro-Electro-Mechanical System, MEMS) process. MEMS refers to high-tech devices with a size of a few millimeters or even smaller. The internal structure is generally in the order of micrometers or even nanometers. It is an independent intelligent system.
具体制造过程请参阅图5，图5是本申请微型元件转移装置制造方法一实施例的流程示意图。Please refer to FIG. 5 for the specific manufacturing process. FIG. 5 is a schematic flowchart of an embodiment of a manufacturing method of a micro-element transfer device of the present application.
S11：提供一基板。S11: Provide a substrate.
本实施例中可选取一单晶硅片作为基板，其厚度250~1000μm。In this embodiment, a single crystal silicon wafer may be selected as the substrate, and its thickness is 250-1000 μm.
S12：在基板的平坦表面形成绝缘层。S12: An insulating layer is formed on the flat surface of the substrate.
在基板一平坦表面制作绝缘层，可以选择沉积二氧化硅或氮化硅等绝缘材料，绝缘层厚度可选择在0.1~3μm。An insulating layer can be formed on a flat surface of the substrate. An insulating material such as silicon dioxide or silicon nitride can be deposited. The thickness of the insulating layer can be selected from 0.1 to 3 μm.
S13：在绝缘层表面形成金属布线，金属布线包括多个电极驱动单元。S13: Metal wiring is formed on the surface of the insulating layer, and the metal wiring includes a plurality of electrode driving units.
本实施例中，可采用溅射工艺完成金属布线的制作，对应于上述实施例，金属布线可以是单层金属，也可以是多层金属。以两层金属为例，可先在绝缘层表面溅射粘附金属层，以作为布线金属，材料可以选择为Ti和TiN，厚度为0.1~2微米；然后溅射工艺形成键合金属层，材料可以为Au，厚度为0.1~2微米。最后光刻腐蚀以图案化金属布线，形成电极驱动单元和驱动连接片。In this embodiment, the metal wiring can be manufactured by a sputtering process. Corresponding to the above embodiment, the metal wiring can be a single-layer metal or a multi-layer metal. Taking two-layer metal as an example, the metal layer can be sputtered and adhered on the surface of the insulating layer as the wiring metal. The material can be Ti and TiN with a thickness of 0.1 ~ 2 microns; then the bonding process is formed by the sputtering process. The material can be Au with a thickness of 0.1 to 2 microns. Finally, photolithography is etched to pattern metal wiring to form an electrode driving unit and a driving connection piece.
S14：在金属布线上形成多个硅电极，每一个硅电极对应一电极驱动单元设置。S14: forming a plurality of silicon electrodes on the metal wiring, each silicon electrode corresponding to an electrode driving unit.
本步骤S14形成硅电极可以有多种工艺完成。首先请参阅图6和图7，图6是图5所示的制造方法中在金属布线上形成多个硅电极一实施例的流程示意图，图7是图6所示的制造方法一实施例的工艺过程示意图。In this step S14, forming a silicon electrode can be accomplished by various processes. First, please refer to FIGS. 6 and 7. FIG. 6 is a schematic flowchart of an embodiment of forming a plurality of silicon electrodes on metal wiring in the manufacturing method shown in FIG. 5, and FIG. 7 is an embodiment of the manufacturing method shown in FIG. 6 Schematic diagram of the process.
S141：在金属布线上沉积形成硅电极层。S141: Deposit and form a silicon electrode layer on the metal wiring.
可以采用化学气相沉淀（Chemical Vapor Deposition，CVD）或离子注入在金属布线及基板上沉积形成硅电极层，具体采用低阻硅。Can use chemical vapor deposition (Chemical Vapor Deposition (CVD) or ion implantation is deposited on the metal wiring and the substrate to form a silicon electrode layer, specifically using low resistance silicon.
S143：对硅电极层进行图案化处理，以形成多个硅电极。S143: Patterning the silicon electrode layer to form multiple silicon electrodes.
可以使用光刻刻蚀硅电极层20，对应于电极驱动单元最终形成图案化的凸点硅电极。The silicon electrode layer 20 may be etched using photolithography, corresponding to the electrode driving unit finally forming a patterned bumped silicon electrode.
本方式主要采用沉积和刻蚀工艺完成硅电极结构，工艺简单。This method mainly adopts deposition and etching processes to complete the silicon electrode structure, and the process is simple.
其次，请参阅图8和图9，图8是图5所示的制造方法中在金属布线上形成多个硅电极另一实施例的流程示意图。图9是图8所示的制造方法一实施例的工艺过程示意图。Next, please refer to FIGS. 8 and 9. FIG. 8 is a schematic flowchart of another embodiment of forming a plurality of silicon electrodes on metal wiring in the manufacturing method shown in FIG. 5. 9 is a schematic process diagram of an embodiment of the manufacturing method shown in FIG. 8.
S142：提供一硅片，硅片包括衬底层和顶层硅。S142: Provide a silicon wafer, which includes a substrate layer and a top silicon layer.
硅片30可以选择绝缘层上硅（SOI）材料，其具体包括顶层硅和衬底层，以及二者之间的埋氧层。该结构的硅片减少了寄生电容，具有更低的功耗。顶层硅的厚度选择1~100微米间，且电阻率小于1欧姆每厘米。The silicon wafer 30 may select a silicon-on-insulation (SOI) material, which specifically includes a top silicon layer and a substrate layer, and a buried oxygen layer therebetween. The silicon wafer of this structure reduces parasitic capacitance and has lower power consumption. The thickness of the top silicon layer is selected between 1-100 microns, and the resistivity is less than 1 ohm per centimeter.
S144：对顶层硅进行图案化处理，以形成多个硅电极。S144: Patterning the top silicon layer to form multiple silicon electrodes.
刻蚀顶层硅形成多个硅电极，刻蚀深度为1~100微米，该刻蚀深度则最终作为所得到硅电极的高度。The top silicon is etched to form a plurality of silicon electrodes, the etching depth is 1-100 microns, and the etching depth is finally used as the height of the obtained silicon electrode.
S146：将形成多个硅电极的硅片与形成金属布线的基板键合，使硅电极形成于金属布线上。S146: Bonding the silicon wafer forming the plurality of silicon electrodes to the substrate forming the metal wiring, and forming the silicon electrode on the metal wiring.
将硅片30与基板进行晶圆键合，例如基板上的金属布线的键合金属采用金，则可通过金硅共晶键合等键合方式完成本步骤。然后通过刻蚀工艺去除硅片30的衬底层和埋氧层，以最终在基板上形成凸点硅电极。Wafer bonding the silicon wafer 30 to the substrate. For example, if the bonding metal of the metal wiring on the substrate uses gold, this step can be completed by a bonding method such as gold silicon eutectic bonding. Then, the substrate layer and the buried oxygen layer of the silicon wafer 30 are removed by an etching process to finally form bump silicon electrodes on the substrate.
本实施例中主要通过晶圆键合和刻蚀工艺完成硅电极的制作，工艺简单。In this embodiment, the silicon electrode is mainly manufactured through wafer bonding and etching processes, and the process is simple.
在完成步骤S14后，进一步的，本实施例中还进行步骤S15。After step S14 is completed, further, step S15 is further performed in this embodiment.
S15：在硅电极表面铺设电介质层，并在转移装置上形成驱动连接片。S15: Lay a dielectric layer on the surface of the silicon electrode, and form a driving connection piece on the transfer device.
在硅电极的表面铺设电介质层，本实施例中，可以通过原子层沉积生长致密的三氧化二铝，厚度可以为0.1~2微米。三氧化二铝是一种高硬度的化合物，且不具有导电性，是一种兼具保护作用的绝缘介质。最后，可以利用光刻刻蚀部分电介质层，以露出部分金属布线作为能够与外部电路连接的驱动连接片。A dielectric layer is laid on the surface of the silicon electrode. In this embodiment, dense aluminum oxide can be grown by atomic layer deposition, and the thickness can be 0.1-2 microns. Aluminum oxide is a high-hardness compound and has no conductivity. It is an insulating medium with both protective effects. Finally, a portion of the dielectric layer can be etched using photolithography to expose part of the metal wiring as a driving connection piece that can be connected to an external circuit.
本实施例中公开了一种微型元件转移装置的制造方法，该方法操作简单，工艺简单，在实际生产中容易大批量制作，具有较高的实用性和使用性。This embodiment discloses a method for manufacturing a micro-element transfer device. The method is simple in operation and simple in process. It is easy to manufacture in large quantities in actual production and has high practicality and usability.
以上所述仅为本申请的实施方式，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。The above are only the embodiments of the present application, and therefore do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by the description and drawings of this application, or directly or indirectly used in other related technologies In the field, the same reason is included in the scope of patent protection of this application.

Claims (16)

  1. 一种转移装置，用于转移微型元件，所述转移装置包括：A transfer device for transferring micro-elements. The transfer device includes:
    基板，包括平坦表面；Substrates, including flat surfaces;
    金属布线，形成于所述基板的平坦表面，包括多个电极驱动单元；Metal wiring formed on the flat surface of the substrate, including a plurality of electrode driving units;
    多个硅电极，形成于所述金属布线背对所述基板的一侧上，每一所述硅电极对应一所述电极驱动单元设置，被所述电极驱动单元驱动以拾取或释放所述微型元件。A plurality of silicon electrodes are formed on the side of the metal wiring facing away from the substrate, each of the silicon electrodes is provided corresponding to one of the electrode driving units, and is driven by the electrode driving unit to pick up or release the micro element.
  2. 根据权利要求1所述的转移装置，其中，所述金属布线包括单层金属层，所述单层金属层包括Cr、Cu、Au、Ni、W、Mo、Ti、TiN中的至少一种，其厚度为0.1~1μm。The transfer device according to claim 1, wherein the metal wiring includes a single-layer metal layer including at least one of Cr, Cu, Au, Ni, W, Mo, Ti, TiN, Its thickness is 0.1 ~ 1μm.
  3. 根据权利要求1所述的转移装置，其中，所述金属布线包括依次层叠于所述基板上的粘附金属层和键合金属层，所述硅电极形成于所述键合金属层背对所述基板的一侧上。The transfer device according to claim 1, wherein the metal wiring includes an adhesive metal layer and a bonding metal layer sequentially stacked on the substrate, and the silicon electrode is formed on the bonding metal layer facing away On one side of the substrate.
  4. 根据权利要求3所述的转移装置，其中，所述粘附金属层的材料包括金属Ti或TiN，厚度为0.1~1μm。The transfer device according to claim 3, wherein the material of the metal adhesion layer comprises metal Ti or TiN, and the thickness is 0.1-1 μm.
  5. 根据权利要求3所述的转移装置，其中，所述键合金属层的材料包括Au，厚度为0.1~2μm。The transfer device according to claim 3, wherein the material of the bonding metal layer includes Au, and the thickness is 0.1 to 2 μm.
  6. 根据权利要求2所述的转移装置，其中，所述电极驱动单元包括电极键合区和驱动导线区；所述硅电极形成于所述电极键合区背对所述基板的一侧上。The transfer device according to claim 2, wherein the electrode driving unit includes an electrode bonding area and a driving wire area; the silicon electrode is formed on a side of the electrode bonding area facing away from the substrate.
  7. 根据权利要求1所述的转移装置，其中，所述多个电极驱动单元阵列排布，所述多个硅电极阵列排布。The transfer device according to claim 1, wherein the plurality of electrode driving unit arrays are arranged and the plurality of silicon electrode arrays are arranged.
  8. 根据权利要求1所述的转移装置，其中，所述金属布线进一步包括驱动连接片，连接于所述多个电极驱动单元；所述驱动连接片用于与外部电路之间连接，以使得所述外部电路通过所述驱动连接片控制所述电极驱动单元。The transfer device according to claim 1, wherein the metal wiring further includes a driving connection piece connected to the plurality of electrode driving units; the driving connection piece is used to connect with an external circuit so that the The external circuit controls the electrode driving unit through the driving connection piece.
  9. 根据权利要求1所述的转移装置，其中，所述硅电极的表面铺设有电介质层。The transfer device according to claim 1, wherein a dielectric layer is laid on the surface of the silicon electrode.
  10. 根据权利要求1所述的转移装置，其中，所述硅电极为低阻硅电极。The transfer device according to claim 1, wherein the silicon electrode is a low-resistance silicon electrode.
  11. 根据权利要求1所述的转移装置，其中，所述基板上形成有绝缘层，所述金属布线形成与所述绝缘层上。The transfer device according to claim 1, wherein an insulating layer is formed on the substrate, and the metal wiring is formed on the insulating layer.
  12. 根据权利要求1所述的转移装置，其中，所述基板的厚度为250~1000μm，所述绝缘层的厚度为0.1~3μm。The transfer device according to claim 1, wherein the thickness of the substrate is 250 to 1000 μm, and the thickness of the insulating layer is 0.1 to 3 μm.
  13. 一种转移装置的制造方法，所述转移装置用于转移微型元件，所述制造方法包括：A manufacturing method of a transfer device for transferring micro-elements, the manufacturing method includes:
    提供一基板，所述基板包括平坦表面；Providing a substrate, the substrate including a flat surface;
    在所述基板的平坦表面形成金属布线，所述金属布线包括多个电极驱动单元；Forming a metal wiring on the flat surface of the substrate, the metal wiring including a plurality of electrode driving units;
    在所述金属布线上形成多个硅电极，每一所述硅电极对应一电极驱动单元设置。A plurality of silicon electrodes are formed on the metal wiring, and each of the silicon electrodes is provided corresponding to an electrode driving unit.
  14. 根据权利要求13所述的制造方法，其中，所述在所述金属布线上形成多个硅电极，包括：The manufacturing method according to claim 13, wherein the forming a plurality of silicon electrodes on the metal wiring includes:
    在所述金属布线上沉积形成硅电极层；Depositing and forming a silicon electrode layer on the metal wiring;
    对所述硅电极层进行图案化处理，以形成所述多个硅电极。The silicon electrode layer is patterned to form the plurality of silicon electrodes.
  15. 根据权利要求13所述的制造方法，其中，所述在所述金属布线上形成多个硅电极，包括：The manufacturing method according to claim 13, wherein the forming a plurality of silicon electrodes on the metal wiring includes:
    提供一硅片，所述硅片包括衬底层和顶层硅；Providing a silicon wafer, the silicon wafer includes a substrate layer and a top silicon layer;
    对所述顶层硅进行图案化处理，以形成所述多个硅电极；Patterning the top silicon layer to form the plurality of silicon electrodes;
    将形成多个所述硅电极的硅片与形成金属布线的基板键合，使所述硅电极形成于所述金属布线上。A silicon wafer forming a plurality of the silicon electrodes is bonded to a substrate forming a metal wiring, and the silicon electrode is formed on the metal wiring.
  16. 根据权利要求13所述的制造方法，进一步包括：在所述硅电极表面铺设电介质层，并在所述转移装置上通过露出至少部分金属布线形成与外部电路连接的驱动连接片。The manufacturing method according to claim 13, further comprising: laying a dielectric layer on the surface of the silicon electrode, and forming a drive connection piece connected to an external circuit on the transfer device by exposing at least part of the metal wiring.
PCT/CN2019/075410 2018-10-31 2019-02-18 Micro-component transfer device and manufacturing method therefor WO2020087801A1 (en)

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