WO2020082256A1 - Ultrasonic transducer and manufacturing method therefor - Google Patents

Ultrasonic transducer and manufacturing method therefor Download PDF

Info

Publication number
WO2020082256A1
WO2020082256A1 PCT/CN2018/111580 CN2018111580W WO2020082256A1 WO 2020082256 A1 WO2020082256 A1 WO 2020082256A1 CN 2018111580 W CN2018111580 W CN 2018111580W WO 2020082256 A1 WO2020082256 A1 WO 2020082256A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
ultrasonic transducer
upper electrode
substrate
groove
Prior art date
Application number
PCT/CN2018/111580
Other languages
French (fr)
Chinese (zh)
Inventor
王红超
沈健
李运宁
Original Assignee
深圳市汇顶科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市汇顶科技股份有限公司 filed Critical 深圳市汇顶科技股份有限公司
Priority to CN201880002105.7A priority Critical patent/CN109561876A/en
Priority to PCT/CN2018/111580 priority patent/WO2020082256A1/en
Publication of WO2020082256A1 publication Critical patent/WO2020082256A1/en

Links

Images

Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
    • A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
    • G10K11/02—Mechanical acoustic impedances; Impedance matching, e.g. by horns; Acoustic resonators
    • G—PHYSICS
    • G10—MUSICAL INSTRUMENTS; ACOUSTICS
    • G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K9/00—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers
    • G10K9/12—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated
    • G10K9/122—Devices in which sound is produced by vibrating a diaphragm or analogous element, e.g. fog horns, vehicle hooters or buzzers electrically operated using piezoelectric driving means

Definitions

  • the present application relates to the field of ultrasound imaging technology, and in particular, to an ultrasound transducer and a method of manufacturing the same.
  • CMUT micromachined ultrasonic transducer
  • Ultrasonic transducing devices usually include a flexible substrate, a lower electrode, an etched sacrificial layer, an organic polymer support layer, an organic polymer vibrating film, and an upper electrode, which are then arranged by array control of the upper electrode Independent control of ultrasonic transducer array elements.
  • this method requires connecting the upper electrode and the integrated circuit on the wafer through external leads.
  • the number of upper electrodes is large, the number of leads will increase accordingly; thereby increasing the number of external leads and the difficulty of wiring.
  • the number of external leads is large, it will also cause inconvenience to the transmission and reception control of the ultrasonic transducer array element.
  • the invention provides an ultrasonic transducer and a manufacturing method thereof, which realizes the arraying of lower electrodes, thereby making the lead wire method simpler, and facilitating independent control of the transmission and reception of the ultrasonic transducer array element.
  • the present invention provides an ultrasonic transducer, including: a substrate, a lower electrode, a support block, a diaphragm layer, and an upper electrode stacked in this order; wherein, a side of the substrate close to the diaphragm layer A groove is provided, and the lower electrode is filled in the groove; the support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity and the The position of the lower electrode corresponds.
  • the upper electrode is a conductive layer deposited on the diaphragm layer, and the thickness of the conductive layer is 0.6 ⁇ m; the material of the conductive layer includes any one of aluminum, copper, and silver.
  • the material of the diaphragm layer includes: nitride or oxide; the thickness of the diaphragm layer is: 0.5 ⁇ m.
  • the number of the grooves is 2 or more, and each groove is filled with a lower electrode.
  • the number of the cavities is 2 or more, and each cavity corresponds to the position of at least one lower electrode.
  • the material of the lower electrode includes any one of aluminum, copper, and silver.
  • the substrate is a silicon wafer
  • a control circuit is provided on the silicon wafer, the control circuit is electrically connected to the lower electrode, and the upper electrode is grounded.
  • an embodiment of the present invention provides a method for manufacturing an ultrasonic transducer, for manufacturing the ultrasonic transducer according to any one of the first aspect; the method includes:
  • the first substrate is removed to obtain the ultrasonic transducer.
  • the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
  • depositing a diaphragm layer on the upper electrode includes:
  • a silicon nitride layer with a predetermined thickness is deposited on the upper electrode, and the silicon nitride layer constitutes the diaphragm layer; deposition methods include: chemical vapor deposition, evaporation, and sputtering.
  • forming a groove on the first surface of the second substrate includes:
  • Multiple grooves are formed on the first surface of the second substrate through photolithography and etching processes.
  • filling the lower electrode in the groove includes:
  • a metal layer is filled in the groove, the metal layer constitutes the lower electrode and the bonding area, and the material of the metal layer includes any one of aluminum, copper, and silver.
  • bonding the bonding area on the first surface of the second substrate to the support block includes:
  • an embodiment of the present invention provides a method for manufacturing an ultrasonic transducer, for manufacturing the ultrasonic transducer according to any one of the first aspect;
  • a sacrificial layer is removed by a wet process to generate a cavity
  • a dielectric layer is deposited on the upper electrode to form a closed cavity.
  • forming a groove on the first surface of the integrated circuit wafer includes:
  • a groove is formed on the first surface of the integrated circuit wafer through photolithography and etching processes.
  • depositing a diaphragm layer on the support layer and the sacrificial layer includes:
  • a silicon nitride layer with a predetermined thickness is deposited on the support layer and the sacrificial layer, and the silicon nitride layer constitutes the diaphragm layer; deposition methods include: chemical vapor deposition, evaporation, and sputtering.
  • the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
  • making a release hole that penetrates the upper electrode, the diaphragm layer, and reaches the sacrificial layer includes:
  • the present invention provides an ultrasonic transducer manufacturing apparatus, including:
  • a processor is used to execute the program stored in the memory, and when the program is executed, the processor is used to execute the method according to any one of the second aspect or the third aspect.
  • the present invention provides a computer-readable storage medium, including: instructions that, when run on a computer, cause the computer to perform the method described in any one of the second aspect or the third aspect.
  • the ultrasonic transducer and its manufacturing method provided by the present invention are formed by sequentially stacking a substrate, a lower electrode, a support block, a diaphragm layer, and an upper electrode; wherein, the substrate is provided on the side close to the diaphragm layer A groove in which the lower electrode is filled; the support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity and the lower The positions of the electrodes correspond. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
  • Embodiment 1 is a schematic structural diagram of an application scenario provided by Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural diagram of an ultrasound transducer provided in Embodiment 1 of the present invention.
  • Embodiment 3 is a schematic flowchart of a method for manufacturing an ultrasonic transducer provided by Embodiment 2 of the present invention
  • FIG. 4 is a schematic structural view of sequentially manufacturing an upper electrode and a diaphragm layer on a first substrate
  • FIG. 5 is a schematic structural view of making a support layer on the diaphragm layer
  • FIG. 6 is a schematic structural view after a groove is formed on the first surface of the second substrate
  • FIG. 7 is a schematic diagram of the structure after filling the groove with a metal layer
  • FIG. 8 is a schematic structural view of the bonding area of the first surface of the second substrate after bonding with the support block;
  • FIG. 10 is a schematic flowchart of a method for manufacturing an ultrasonic transducer provided in Embodiment 3 of the present invention.
  • FIG. 11 is a schematic structural view of a groove formed on the first surface of the integrated circuit wafer
  • FIG. 12 is a schematic diagram of the structure after filling the groove with a metal layer
  • FIG. 13 is a schematic diagram of the structure after filling the sacrificial layer in the groove of the support layer;
  • FIG. 14 is a schematic diagram of the structure after depositing the diaphragm layer on the support layer and the sacrificial layer;
  • 15 is a schematic diagram of the structure after the release hole is made.
  • FIG. 16 is a schematic structural diagram of another completed ultrasonic transducer
  • FIG. 17 is a schematic structural diagram of an ultrasonic transducer manufacturing apparatus provided in Embodiment 4 of the present invention.
  • CMUT Micromachined ultrasonic transducer
  • CMUT is a micro-electromechanical device that utilizes the mutual conversion of acoustic energy and electrical energy. It has the advantages of high integration and good sensitivity. It is an ideal device for making ultrasonic transducers.
  • CMUT can convert ultrasonic waves into electrical signals and electrical signals into ultrasonic waves.
  • a DC voltage is applied between the upper electrode and the lower electrode, the strong electrostatic field pulls the diaphragm layer toward the substrate, and then an AC voltage is applied between the upper electrode and the lower electrode. At this time, the diaphragm layer will vibrate. Generate ultrasound.
  • an appropriate DC bias voltage is applied between the upper electrode and the lower electrode, the diaphragm layer vibrates under the action of ultrasonic waves, and the capacitance between the two electrode plates changes. By detecting this change, ultrasonic waves are received.
  • FIG. 1 is a schematic structural diagram of an application scenario provided by Embodiment 1 of the present invention.
  • an ultrasonic transducer can be applied in the field of fingerprint recognition.
  • the second surface of the substrate 106 of the ultrasonic transducer 100 is disposed on the backing plate 201, the matching layer 202 is disposed on the upper electrode 101 of the ultrasonic transducer 100, and the screen layer 203 is disposed on the matching layer 202.
  • the ultrasonic transducer 100 emits ultrasonic waves, and the ultrasonic waves sequentially pass through the matching layer 202 and the screen layer 203 and reach the finger skin 204.
  • the matching layer 202 may be designed as a single-layer or multi-layer structure to enhance the transmittance of ultrasonic waves. Specifically, when the ultrasonic wave emitted by the ultrasonic transducer 100 reaches the ridge region 2041, since the acoustic impedance of the skin is small, the ultrasonic wave easily passes through the skin, so the strength of the formed echo signal is weak.
  • the ultrasonic wave emitted by the ultrasonic transducer 100 reaches the valley region 2042, since there is a gap between the skin and the screen layer 203, the acoustic impedance is large, and the strength of the echo signal formed by it is strong. Based on the above principle, the strength of the echo signal of the sound wave on the skin surface can be used to form the echo image, so that the characteristic information of the skin surface can be completely reflected. Finally, by comparing the skin surface feature information with pre-stored skin feature information, the purpose of biometric identification is achieved.
  • FIG. 2 is a schematic structural diagram of an ultrasound transducer according to Embodiment 1 of the present invention.
  • the ultrasound transducer in this embodiment may include: a substrate 106, a lower electrode 105, and a support block stacked in this order 103.
  • the space between 106 is divided into a closed cavity 104, and the cavity 104 corresponds to the position of the lower electrode 105.
  • the upper electrode 101 is a conductive layer deposited on the diaphragm layer 102, and the thickness of the conductive layer is 0.6 microns; the material of the conductive layer includes any one of aluminum, copper, and silver.
  • the specific thickness of the conductive layer is not limited, and those skilled in the art may adjust the settings according to actual needs. Specifically, any one of chemical vapor deposition, evaporation, and sputtering may be used to deposit a conductive layer on the upper electrode 101.
  • the strong electrostatic field pulls the diaphragm layer 102 toward the substrate, and then an AC voltage is applied between the upper electrode 101 and the lower electrode 105. At this time, the diaphragm layer 102 vibrates to generate ultrasonic waves. Conversely, after an appropriate DC bias voltage is applied between the upper electrode 101 and the lower electrode 105, the diaphragm layer 102 vibrates under the action of ultrasonic waves. At this time, the capacitance between the upper electrode 101 and the lower electrode 105 changes. This change enables the reception of ultrasonic waves.
  • the substrate 106 may be a silicon-based substrate, and an integrated control circuit is provided on the silicon-based substrate, the integrated control circuit is electrically connected to the lower electrode 105, and the upper electrode 101 is grounded.
  • the lower electrode 105 may serve as an anode
  • the upper electrode 101 may serve as a cathode.
  • the upper electrode 101 is a full-surface electrode, the upper electrode 101 is grounded, and the lower electrode 105 is independently controlled by a control circuit, thereby forming a plurality of ultrasonic transducer array element structures. In this way, the lead structure can be simplified, which facilitates the integration and wiring of the ultrasonic transducer.
  • the material of the diaphragm layer 102 includes: nitride or oxide; the thickness of the diaphragm layer is: 0.5 ⁇ m.
  • the diaphragm layer can be made of Si3N4 material.
  • the thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves. Therefore, it can be set according to the actual application. This embodiment is not specifically limited.
  • the number of grooves is 2 or more, and each groove is filled with the lower electrode 105.
  • the material of the lower electrode includes any one of aluminum, copper, and silver.
  • the number of the cavity 104 is 2 or more, and each cavity corresponds to the position of at least one lower electrode 105.
  • the position of the cavity 104 corresponds to the position of the lower electrode 105.
  • there are multiple cavities 104 there are also multiple corresponding lower electrodes 105.
  • three grooves are provided on the substrate 106, and no metal material is filled in the grooves to form the lower electrode 105.
  • the supporting block 103 is interposed between the diaphragm layer 102 and the substrate 106, and is used to divide the space between the diaphragm layer 102 and the substrate 106 into a plurality of closed cavities 104.
  • the cavity 104 is to provide a gap for the vibration of the diaphragm layer 102.
  • the substrate, the lower electrode, the support block, the diaphragm layer, and the upper electrode are stacked in this order; wherein, the side of the substrate close to the diaphragm layer is provided with a groove, and the lower electrode is filled in the groove;
  • the support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity corresponds to the position of the lower electrode. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
  • FIG. 3 is a schematic flowchart of a method for manufacturing an ultrasonic transducer according to Embodiment 2 of the present invention. As shown in FIG. 3, the method in this embodiment may include:
  • the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
  • a silicon nitride layer with a predetermined thickness may be deposited on the upper electrode, and the silicon nitride layer constitutes the diaphragm layer.
  • the material of the diaphragm layer may also be oxide; the thickness of the diaphragm layer is: 0.5 ⁇ m.
  • Si3N4 material can be used to make the diaphragm layer, and the thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves, and therefore, it can be set according to the actual application.
  • This embodiment is not specifically limited.
  • FIG. 4 is a schematic structural view of sequentially manufacturing an upper electrode and a diaphragm layer on a first substrate; as shown in FIG. 4, first, an upper electrode 502 and a diaphragm layer 503 are deposited on a first substrate 501, and then on the diaphragm layer The support layer 504 is deposited on 503. Specifically, any one of chemical vapor deposition, evaporation, and sputtering may be used to deposit the conductive layer on the first substrate.
  • the support layer may be deposited on the diaphragm layer by any one of chemical vapor deposition, evaporation, and sputtering.
  • the material of the support layer may be a material that easily generates a bonding structure, such as Ge. Further, photolithography and etching processes may be used to form the shape of the support block on the support layer.
  • FIG. 5 is a schematic structural diagram of a support layer made on the diaphragm layer. As shown in FIG. 5, the support block 5041 is located on the diaphragm layer 503. The shape of the support block 5041 may be a matrix, a polygon, or the like.
  • FIG. 6 is a schematic structural view after a groove is formed on the first surface of the second substrate. As shown in FIG. 6, three grooves 506 can be formed on the first surface of the second substrate 505.
  • a metal layer is filled in the groove, and the metal layer constitutes the lower electrode and the bonding area.
  • FIG. 7 is a schematic diagram of the structure after filling the groove with a metal layer.
  • a metal layer can be filled in the groove 506 by electroplating or sputtering.
  • the material of the metal layer includes any one of aluminum, copper, and silver.
  • FIG. 8 is a schematic structural view of the bonding area of the first surface of the second substrate after bonding with the support block.
  • the metal layer of the bonding area 5072 of the second substrate and the support block 504 are formed together Crystalline bonding.
  • Al-Ge eutectic bonding can be formed.
  • FIG. 9 is a schematic structural diagram of an ultrasonic transducer that is completed.
  • an upper electrode on the first substrate; depositing a diaphragm layer on the upper electrode; depositing a support layer on the diaphragm layer, and graphically processing the support layer to obtain a corresponding support block;
  • a groove is formed on the first surface of the second substrate; a metal layer is filled in the groove, the metal layer constitutes the lower electrode and the bonding area; the bonding area of the first surface of the second substrate is bonded to the support block; removed On the first substrate, an ultrasonic transducer is obtained. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
  • FIG. 10 is a schematic flowchart of a method for manufacturing an ultrasonic transducer according to Embodiment 3 of the present invention. As shown in FIG. 10, the method in this embodiment may include:
  • FIG. 11 is a schematic structural view of a groove formed on the first surface of the integrated circuit wafer. As shown in FIG. 11, a groove can be formed on the first surface of the integrated circuit wafer 601 through photolithography and etching processes .
  • a metal layer 602 can be filled in the groove through an electroplating or sputtering process.
  • the metal layer 602 constitutes a lower electrode.
  • the material of the metal layer 602 includes any one of aluminum, copper, and silver. 12 is a schematic diagram of the structure after filling the groove with a metal layer.
  • S404 Open a groove on the support layer, and fill the sacrificial layer in the groove.
  • FIG. 13 is a schematic diagram of the structure after filling the sacrificial layer in the groove of the support layer. As shown in FIG. 13, a groove can be opened in the support layer 603 through photolithography and etching processes, and then the sacrificial layer 604 can be filled in the groove
  • the material of the sacrificial layer 604 may be silicon oxide or polysilicon material.
  • FIG. 14 is a schematic diagram of the structure after depositing the diaphragm layer on the support layer and the sacrificial layer.
  • a silicon nitride layer with a predetermined thickness can be deposited on the support layer 603 and the sacrificial layer 604. ⁇ ⁇ 605.
  • the material of the diaphragm layer 605 may also be oxide; the thickness of the diaphragm layer is: 0.5 ⁇ m.
  • Si3N4 material can be used to make the diaphragm layer, and the thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves, and therefore, it can be set according to the actual application. This embodiment is not specifically limited.
  • the upper electrode can be deposited on the diaphragm layer by any of chemical vapor deposition, evaporation, and sputtering.
  • the upper electrode is a full-face electrode.
  • the material of the upper electrode includes: aluminum, copper, silver Of any kind.
  • FIG. 15 is a schematic view of the structure after the release hole is made.
  • the release hole 607 penetrates the upper electrode 606 and the diaphragm layer 605 and reaches the sacrificial layer 604.
  • a release hole 607 that penetrates through the upper electrode 606, the diaphragm layer 605, and reaches the sacrificial layer 604 can be made by photolithography and etching processes.
  • a wet process is used to remove the sacrificial layer on the basis of FIG. 15 to generate a cavity.
  • FIG. 16 is a schematic structural diagram of another completed ultrasonic transducer. As shown in FIG. 16, a dielectric layer 608 is deposited on the upper electrode 606, and the dielectric layer 608 is used to seal the cavity 609.
  • a groove is formed on the first surface of the integrated circuit wafer; a metal layer is filled in the groove, and the metal layer constitutes the lower electrode; a support layer is deposited on the first surface of the wafer and the metal layer; Open a groove on the support layer and fill the sacrificial layer in the groove; deposit a diaphragm layer on the support layer and the sacrificial layer; deposit an upper electrode on the diaphragm layer; make a penetrating upper electrode and a diaphragm layer and reach the sacrificial layer Through the release hole, the sacrificial layer is removed by a wet process to create a cavity; a dielectric layer is deposited on the upper electrode to form a closed cavity, and finally an ultrasonic transducer is obtained. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
  • FIG. 17 is a schematic structural diagram of an ultrasonic transducer manufacturing apparatus provided in Embodiment 4 of the present invention. As shown in FIG. 17, the ultrasonic transducer manufacturing apparatus 70 in this embodiment includes:
  • the memory 72 is used to store executable instructions, and the memory may also be a flash (flash memory).
  • the processor 71 is configured to execute executable instructions stored in the memory, so as to implement various steps in the method involved in the foregoing embodiments. For details, please refer to the related description in the foregoing method embodiment.
  • the memory 72 may be independent or integrated with the processor 71.
  • the ultrasonic transducer manufacturing apparatus 70 may further include:
  • the bus 73 is used to connect the memory 72 and the processor 71.
  • embodiments of the present application also provide a computer-readable storage medium in which computer-executable instructions are stored.
  • the user equipment executes the above various possibilities Methods.
  • the computer-readable medium includes a computer storage medium and a communication medium, where the communication medium includes any medium that facilitates transfer of a computer program from one place to another.
  • the storage medium may be any available medium that can be accessed by a general-purpose or special-purpose computer.
  • An exemplary storage medium is coupled to the processor so that the processor can read information from the storage medium and can write information to the storage medium.
  • the storage medium may also be an integral part of the processor.
  • the processor and the storage medium may be located in an application specific integrated circuit (ASIC).
  • ASIC application specific integrated circuit
  • the application specific integrated circuit may be located in the user equipment.
  • the processor and the storage medium may also exist as discrete components in the communication device.
  • ROM read-only memory
  • RAM random access memory
  • magnetic disk magnetic disk
  • optical disk etc.

Abstract

Disclosed are an ultrasonic transducer (100) and a manufacturing method therefor. The ultrasonic transducer (100) comprises: a substrate (106), lower electrodes (105), supporting blocks (103), a vibrating diaphragm layer (102) and an upper electrode (101) arranged sequentially in a stacked manner, wherein grooves are formed in the surface, close to the vibrating diaphragm layer (102), of the substrate (106); the grooves are filled with the lower electrodes (105); the space between the vibrating diaphragm layer (102) and the substrate (106) is separated into closed cavities (104) by the supporting blocks (103); and the cavities (104) correspond to the positions of the lower electrodes (105). According to the ultrasonic transducer (100), arraying of the lower electrodes (105) is realized, the wire leading mode is simpler, and the transmission and reception of array elements of the ultrasonic transducer (100) are conveniently and independently controlled.

Description

超声换能器及其制造方法Ultrasonic transducer and its manufacturing method 技术领域Technical field
本申请涉及超声成像技术领域，尤其涉及一种超声换能器及其制造方法。The present application relates to the field of ultrasound imaging technology, and in particular, to an ultrasound transducer and a method of manufacturing the same.
背景技术Background technique
随着生物识别技术的发展，越来越多的终端上配备了生物识别芯片。而微机械超声换能器(capacitive micromachined urtrosonic transducer，CMUT)是较为常见的生物识别传感器，其通过主动发射高频声波穿过屏幕到达生物体的表面，然后收集超声波在按压区域的回波形成到皮肤特征图像，最后将皮肤特征图像和存储的图像进行对比，完成指纹识别、活体检测等功能。With the development of biometrics technology, more and more terminals are equipped with biometrics chips. The micromachined ultrasonic transducer (CMUT) is a more common biometric sensor. It actively emits high-frequency sound waves through the screen to reach the surface of the organism, and then collects the echo of the ultrasonic wave in the pressing area Skin feature image, and finally compare the skin feature image with the stored image to complete the functions of fingerprint recognition and living body detection.
目前的超声换能器件，通常包括依次设置的柔性基底、下电极、刻蚀牺牲层、有机聚合物支撑层、有机聚合物振动薄膜，以及上电极，然后通过对上电极的阵列化控制来实现对超声换能器阵元的独立控制。Current ultrasonic transducing devices usually include a flexible substrate, a lower electrode, an etched sacrificial layer, an organic polymer support layer, an organic polymer vibrating film, and an upper electrode, which are then arranged by array control of the upper electrode Independent control of ultrasonic transducer array elements.
但是，这种方式需要将上电极与晶圆上的集成电路通过外置的引线连接，当上电极数量较多时，引线的数量也会相应增多；从而增加了外置引线的数量以及布线难度。当外置引线数量较多时，还会对超声换能器阵元的发射和接收控制造成不便。However, this method requires connecting the upper electrode and the integrated circuit on the wafer through external leads. When the number of upper electrodes is large, the number of leads will increase accordingly; thereby increasing the number of external leads and the difficulty of wiring. When the number of external leads is large, it will also cause inconvenience to the transmission and reception control of the ultrasonic transducer array element.
发明内容Summary of the invention
本发明提供一种超声换能器及其制造方法，实现了下电极的阵列化，从而使得引线方式更加简单，便于对超声换能器阵元的发射和接收进行独立控制。The invention provides an ultrasonic transducer and a manufacturing method thereof, which realizes the arraying of lower electrodes, thereby making the lead wire method simpler, and facilitating independent control of the transmission and reception of the ultrasonic transducer array element.
第一方面，本发明提供一种超声换能器，包括：依次层叠设置的衬底、下电极、支撑块、振膜层、上电极；其中，所述衬底的靠近振膜层的一面上设置有凹槽，所述下电极填充于所述凹槽内；所述支撑块将所述振膜层 和所述衬底之间的空间分隔成密闭的空腔，且所述空腔与所述下电极的位置相对应。In a first aspect, the present invention provides an ultrasonic transducer, including: a substrate, a lower electrode, a support block, a diaphragm layer, and an upper electrode stacked in this order; wherein, a side of the substrate close to the diaphragm layer A groove is provided, and the lower electrode is filled in the groove; the support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity and the The position of the lower electrode corresponds.
可选地，所述上电极为沉积在所述振膜层上的导电层，所述导电层的厚度为0.6微米；所述导电层的材料包括：铝、铜、银中的任一种。Optionally, the upper electrode is a conductive layer deposited on the diaphragm layer, and the thickness of the conductive layer is 0.6 μm; the material of the conductive layer includes any one of aluminum, copper, and silver.
可选地，所述振膜层的材料包括：氮化物，或者氧化物；所述振膜层的厚度为：0.5微米。Optionally, the material of the diaphragm layer includes: nitride or oxide; the thickness of the diaphragm layer is: 0.5 μm.
可选地，所述凹槽的数量为2个及以上，每个凹槽中填充有下电极。Optionally, the number of the grooves is 2 or more, and each groove is filled with a lower electrode.
可选地，所述空腔的数量为2个及以上，每个空腔与至少一个所述下电极的位置对应。Optionally, the number of the cavities is 2 or more, and each cavity corresponds to the position of at least one lower electrode.
可选地，所述下电极的材料包括：铝、铜、银中的任一种。Optionally, the material of the lower electrode includes any one of aluminum, copper, and silver.
可选地，所述衬底为硅晶圆，所述硅晶圆上设置有控制电路，所述控制电路与所述下电极电连接，所述上电极接地。Optionally, the substrate is a silicon wafer, a control circuit is provided on the silicon wafer, the control circuit is electrically connected to the lower electrode, and the upper electrode is grounded.
第二方面，本发明实施例提供一种超声换能器的制造方法，用于制作第一方面中任一项所述的超声换能器；所述方法包括：In a second aspect, an embodiment of the present invention provides a method for manufacturing an ultrasonic transducer, for manufacturing the ultrasonic transducer according to any one of the first aspect; the method includes:
在第一衬底上沉积上电极；Depositing an electrode on the first substrate;
在所述上电极上沉积振膜层；Depositing a diaphragm layer on the upper electrode;
在所述振膜层上沉积支撑层，并对所述支撑层进行图形化处理，得到对应的支撑块；Depositing a support layer on the diaphragm layer, and graphically processing the support layer to obtain a corresponding support block;
在第二衬底的第一表面上开设凹槽；Forming a groove on the first surface of the second substrate;
在所述凹槽内填充金属层，所述金属层构成下电极和键合区；Filling a metal layer in the groove, the metal layer forming a lower electrode and a bonding area;
将所述第二衬底的第一表面的键合区与所述支撑块键合；Bonding the bonding area of the first surface of the second substrate to the support block;
去除第一衬底，得到所述超声换能器。The first substrate is removed to obtain the ultrasonic transducer.
可选地，所述上电极为整面电极，所述上电极的材料包括：铝、铜、银中的任一种。Optionally, the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
可选地，在所述上电极上沉积振膜层，包括：Optionally, depositing a diaphragm layer on the upper electrode includes:
在上电极上沉积预设厚度的氮化硅层，所述氮化硅层构成所述振膜层；沉积方式包括：化学气相沉积、蒸镀、溅射。A silicon nitride layer with a predetermined thickness is deposited on the upper electrode, and the silicon nitride layer constitutes the diaphragm layer; deposition methods include: chemical vapor deposition, evaporation, and sputtering.
可选地，在第二衬底的第一表面上开设凹槽，包括：Optionally, forming a groove on the first surface of the second substrate includes:
通过光刻和刻蚀工艺在第二衬底的第一表面上开设多个凹槽。Multiple grooves are formed on the first surface of the second substrate through photolithography and etching processes.
可选地，在所述凹槽内填充下电极，包括：Optionally, filling the lower electrode in the groove includes:
通电镀或者溅镀工艺，在所述凹槽内填充金属层，所述金属层构成下 电极和键合区，所述金属层的材料包括：铝、铜、银中的任一种。Through the electroplating or sputtering process, a metal layer is filled in the groove, the metal layer constitutes the lower electrode and the bonding area, and the material of the metal layer includes any one of aluminum, copper, and silver.
可选地，将所述第二衬底的第一表面的键合区与所述支撑块键合，包括：Optionally, bonding the bonding area on the first surface of the second substrate to the support block includes:
将所述第二衬底的键合区的金属层与所述支撑块形成共晶键合。Forming a eutectic bond between the metal layer in the bonding region of the second substrate and the support block.
第三方面，本发明实施例提供一种超声换能器的制造方法，用于制作第一方面中任一项所述的超声换能器；所述方法包括：In a third aspect, an embodiment of the present invention provides a method for manufacturing an ultrasonic transducer, for manufacturing the ultrasonic transducer according to any one of the first aspect;
在集成电路的晶圆的第一表面上开设凹槽；Open a groove on the first surface of the integrated circuit wafer;
在所述凹槽内填充金属层，所述金属层构成下电极；Filling a metal layer in the groove, the metal layer constituting a lower electrode;
在所述晶圆的第一表面和金属层上沉积支撑层；Depositing a support layer on the first surface of the wafer and the metal layer;
在所述支撑层上开设凹槽，并在所述凹槽内填充牺牲层；Forming a groove on the support layer, and filling the sacrificial layer in the groove;
在支撑层和牺牲层上沉积振膜层；Deposit the diaphragm layer on the support layer and the sacrificial layer;
在所述振膜层上沉积上电极；Depositing an upper electrode on the diaphragm layer;
制作贯穿上电极、振膜层，并到达牺牲层的释放孔；Make a release hole that penetrates the upper electrode and diaphragm layer and reaches the sacrificial layer;
通过所述释放孔，采用湿法工艺去除牺牲层，以生成空腔；Through the release hole, a sacrificial layer is removed by a wet process to generate a cavity;
在所述上电极上沉积介质层，以形成密闭的空腔。A dielectric layer is deposited on the upper electrode to form a closed cavity.
可选地，在集成电路的晶圆的第一表面上开设凹槽，包括：Optionally, forming a groove on the first surface of the integrated circuit wafer includes:
通过光刻和刻蚀工艺集成电路的晶圆的第一表面上开设凹槽。A groove is formed on the first surface of the integrated circuit wafer through photolithography and etching processes.
可选地，在支撑层和牺牲层上沉积振膜层，包括：Optionally, depositing a diaphragm layer on the support layer and the sacrificial layer includes:
在支撑层和牺牲层上沉积预设厚度的氮化硅层，所述氮化硅层构成所述振膜层；沉积方式包括：化学气相沉积、蒸镀、溅射。A silicon nitride layer with a predetermined thickness is deposited on the support layer and the sacrificial layer, and the silicon nitride layer constitutes the diaphragm layer; deposition methods include: chemical vapor deposition, evaporation, and sputtering.
可选地，所述上电极为整面电极，所述上电极的材料包括：铝、铜、银中的任一种。Optionally, the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
可选地，制作贯穿上电极、振膜层，并到达牺牲层的释放孔，包括：Optionally, making a release hole that penetrates the upper electrode, the diaphragm layer, and reaches the sacrificial layer includes:
通过光刻和刻蚀工艺制作贯穿上电极、振膜层，并到达牺牲层的释放孔。Through the photolithography and etching processes, a release hole that penetrates the upper electrode and the diaphragm layer and reaches the sacrificial layer is made.
第四方面，本发明提供一种超声换能器的制造设备，包括：According to a fourth aspect, the present invention provides an ultrasonic transducer manufacturing apparatus, including:
存储器，用于存储程序；Memory for storing programs;
处理器，用于执行所述存储器存储的所述程序，当所述程序被执行时，所述处理器用于执行第二方面或者第三方面中任一所述的方法。A processor is used to execute the program stored in the memory, and when the program is executed, the processor is used to execute the method according to any one of the second aspect or the third aspect.
第五方面，本发明提供一种计算机可读存储介质，包括：指令，当其在计算机上运行时，使得计算机执行第二方面或者第三方面中任一所述的 方法。In a fifth aspect, the present invention provides a computer-readable storage medium, including: instructions that, when run on a computer, cause the computer to perform the method described in any one of the second aspect or the third aspect.
本发明提供的超声换能器及其制造方法，通过依次层叠设置的衬底、下电极、支撑块、振膜层、上电极；其中，所述衬底的靠近振膜层的一面上设置有凹槽，所述下电极填充于所述凹槽内；所述支撑块将所述振膜层和所述衬底之间的空间分隔成密闭的空腔，且所述空腔与所述下电极的位置相对应。从而实现了下电极的阵列化，使得引线方式更加简单，便于对超声换能器阵元的发射和接收进行独立控制。The ultrasonic transducer and its manufacturing method provided by the present invention are formed by sequentially stacking a substrate, a lower electrode, a support block, a diaphragm layer, and an upper electrode; wherein, the substrate is provided on the side close to the diaphragm layer A groove in which the lower electrode is filled; the support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity and the lower The positions of the electrodes correspond. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
附图说明BRIEF DESCRIPTION
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。In order to more clearly explain the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings used in the embodiments or the description of the prior art. Obviously, the drawings in the following description These are some embodiments of the present invention. For those of ordinary skill in the art, without paying any creative labor, other drawings can also be obtained based on these drawings.
图1为本发明实施例一提供的应用场景的结构示意图；1 is a schematic structural diagram of an application scenario provided by Embodiment 1 of the present invention;
图2为本发明实施例一提供的超声换能器的结构示意图；2 is a schematic structural diagram of an ultrasound transducer provided in Embodiment 1 of the present invention;
图3为本发明实施例二提供的超声换能器的制作方法的流程示意图；3 is a schematic flowchart of a method for manufacturing an ultrasonic transducer provided by Embodiment 2 of the present invention;
图4为在第一衬底上依次制作上电极和振膜层的结构示意图；4 is a schematic structural view of sequentially manufacturing an upper electrode and a diaphragm layer on a first substrate;
图5为在振膜层上制作支撑层的结构示意图；FIG. 5 is a schematic structural view of making a support layer on the diaphragm layer;
图6为在第二衬底的第一表面上开设凹槽后的结构示意图；6 is a schematic structural view after a groove is formed on the first surface of the second substrate;
图7为在凹槽内填充金属层后的结构示意图；7 is a schematic diagram of the structure after filling the groove with a metal layer;
图8为第二衬底的第一表面的键合区与支撑块键合后的结构示意图；8 is a schematic structural view of the bonding area of the first surface of the second substrate after bonding with the support block;
图9为制作完成的一超声换能器的结构示意图；9 is a schematic structural diagram of an ultrasonic transducer completed;
图10为本发明实施例三提供的超声换能器的制作方法的流程示意图；10 is a schematic flowchart of a method for manufacturing an ultrasonic transducer provided in Embodiment 3 of the present invention;
图11为在集成电路的晶圆的第一表面上开设凹槽的结构示意图；11 is a schematic structural view of a groove formed on the first surface of the integrated circuit wafer;
图12为在凹槽内填充金属层后的结构示意图；12 is a schematic diagram of the structure after filling the groove with a metal layer;
图13为在支撑层的凹槽内填充牺牲层后的结构示意图；13 is a schematic diagram of the structure after filling the sacrificial layer in the groove of the support layer;
图14为在支撑层和牺牲层上沉积振膜层后的结构示意图；14 is a schematic diagram of the structure after depositing the diaphragm layer on the support layer and the sacrificial layer;
图15为制作释放孔后的结构示意图；15 is a schematic diagram of the structure after the release hole is made;
图16为制作完成的另一超声换能器的结构示意图；FIG. 16 is a schematic structural diagram of another completed ultrasonic transducer;
图17为本发明实施例四提供的超声换能器的制造设备的结构示意图。FIG. 17 is a schematic structural diagram of an ultrasonic transducer manufacturing apparatus provided in Embodiment 4 of the present invention.
通过上述附图，已示出本公开明确的实施例，后文中将有更详细的描述。这些附图和文字描述并不是为了通过任何方式限制本公开构思的范围，而是通过参考特定实施例为本领域技术人员说明本公开的概念。Through the above drawings, a clear embodiment of the present disclosure has been shown, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of the present disclosure in any way, but to explain the concept of the present disclosure to those skilled in the art by referring to specific embodiments.
具体实施方式detailed description
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of the embodiments of the present invention, but not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the protection scope of the present invention.
本发明的说明书和权利要求书及上述附图中的术语“第一”、“第二”、“第三”、“第四”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本发明的实施例例如能够以除了在这里图示或描述的那些以外的顺序实施。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、***、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "first", "second", "third", "fourth", etc. (if any) in the description and claims of the present invention and the above drawings are used to distinguish similar objects without using To describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, processes, methods, systems, products or devices that contain a series of steps or units need not be limited to those clearly listed Those steps or units, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or equipment.
下面以具体地实施例对本发明的技术方案进行详细说明。下面这几个具体的实施例可以相互结合，对于相同或相似的概念或过程可能在某些实施例不再赘述。The technical solutions of the present invention are described in detail below with specific examples. The following specific embodiments may be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments.
以下，对本申请中的部分用语进行解释说明，以便于本领域技术人员理解。In the following, some terms in this application will be explained to facilitate understanding by those skilled in the art.
1)微机械超声换能器(capacitive micromachined urtrosonic transducer，CMUT)，是利用声能和电能相互转化的微机电器件，具有集成度高、灵敏度好等优点，是制作超声换能器的理想器件。CMUT既可以将超声波转换成电信号，也可将电信号转换成超声波。当在上电极和下电极之间施加直流电压时，强静电场将振膜层拉向衬底，然后再在上电极和下电极之间施加交流电压，此时振膜层就会发生振动而产生超声波。相反，在上电极和 下电极之间施加适当的直流偏置电压后，振膜层在超声波作用下发生振动，两电极板之间的电容发生变化，通过检测这种变化实现超声波的接收。1) Micromachined ultrasonic transducer (CMUT) is a micro-electromechanical device that utilizes the mutual conversion of acoustic energy and electrical energy. It has the advantages of high integration and good sensitivity. It is an ideal device for making ultrasonic transducers. CMUT can convert ultrasonic waves into electrical signals and electrical signals into ultrasonic waves. When a DC voltage is applied between the upper electrode and the lower electrode, the strong electrostatic field pulls the diaphragm layer toward the substrate, and then an AC voltage is applied between the upper electrode and the lower electrode. At this time, the diaphragm layer will vibrate. Generate ultrasound. Conversely, after an appropriate DC bias voltage is applied between the upper electrode and the lower electrode, the diaphragm layer vibrates under the action of ultrasonic waves, and the capacitance between the two electrode plates changes. By detecting this change, ultrasonic waves are received.
图1为本发明实施例一提供的应用场景的结构示意图，如图1所示，超声换能器可以应用在指纹识别领域。超声换能器100的衬底106的第二表面设置在背衬板201上，超声换能器100的上电极101上设置有匹配层202；匹配层202上设置有屏幕层203。当手指皮肤204与屏幕层203接触时，超声换能器100发射超声波，超声波依次穿过匹配层202、屏幕层203后到达手指皮肤204。由于手指皮肤204的表面凹凸不平，将凸出的部分作为脊区域2041、将凹陷的部分作为谷区域2042。匹配层202可以设计为单层或者多层结构，用于增强超声波的透过率。具体地，当超声换能器100发射的超声波到达脊区域2041时，由于皮肤的声阻抗较小，因此超声波很容易穿过皮肤，因此形成的回波信号强度较弱。当超声换能器100发射的超声波到达谷区域2042时，由于皮肤与屏幕层203之间存在空隙，因此声阻抗较大，其形成的回波信号强度较强。基于上述原理，可以利用声波在皮肤表面的回波信号的强弱，形成的回波图像，从而可以完整的反映皮肤表面的特征信息。最后，通过将皮肤表面的特征信息与预先存储的皮肤特征信息对比，达到生物识别的目的。FIG. 1 is a schematic structural diagram of an application scenario provided by Embodiment 1 of the present invention. As shown in FIG. 1, an ultrasonic transducer can be applied in the field of fingerprint recognition. The second surface of the substrate 106 of the ultrasonic transducer 100 is disposed on the backing plate 201, the matching layer 202 is disposed on the upper electrode 101 of the ultrasonic transducer 100, and the screen layer 203 is disposed on the matching layer 202. When the finger skin 204 is in contact with the screen layer 203, the ultrasonic transducer 100 emits ultrasonic waves, and the ultrasonic waves sequentially pass through the matching layer 202 and the screen layer 203 and reach the finger skin 204. Since the surface of the finger skin 204 is uneven, the convex part is regarded as the ridge region 2041, and the concave part is regarded as the valley region 2042. The matching layer 202 may be designed as a single-layer or multi-layer structure to enhance the transmittance of ultrasonic waves. Specifically, when the ultrasonic wave emitted by the ultrasonic transducer 100 reaches the ridge region 2041, since the acoustic impedance of the skin is small, the ultrasonic wave easily passes through the skin, so the strength of the formed echo signal is weak. When the ultrasonic wave emitted by the ultrasonic transducer 100 reaches the valley region 2042, since there is a gap between the skin and the screen layer 203, the acoustic impedance is large, and the strength of the echo signal formed by it is strong. Based on the above principle, the strength of the echo signal of the sound wave on the skin surface can be used to form the echo image, so that the characteristic information of the skin surface can be completely reflected. Finally, by comparing the skin surface feature information with pre-stored skin feature information, the purpose of biometric identification is achieved.
下面以具体地实施例对本发明的技术方案以及本申请的技术方案如何解决上述技术问题进行详细说明。下面这几个具体的实施例可以相互结合，对于相同或相似的概念或过程可能在某些实施例中不再赘述。下面将结合附图，对本发明的实施例进行描述。The following describes in detail the technical solutions of the present invention and how the technical solutions of the present application solve the above technical problems with specific embodiments. The following specific embodiments may be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present invention will be described below with reference to the drawings.
图2为本发明实施例一提供的超声换能器的结构示意图，如图2所示，本实施例中的超声换能器可以包括：依次层叠设置的衬底106、下电极105、支撑块103、振膜层102、上电极101；其中，衬底106的靠近振膜层102的一面上设置有凹槽，下电极105填充于凹槽内；支撑块103将振膜层102和衬底106之间的空间分隔成密闭的空腔104，且空腔104与下电极105的位置相对应。FIG. 2 is a schematic structural diagram of an ultrasound transducer according to Embodiment 1 of the present invention. As shown in FIG. 2, the ultrasound transducer in this embodiment may include: a substrate 106, a lower electrode 105, and a support block stacked in this order 103. Diaphragm layer 102 and upper electrode 101; wherein, a surface of the substrate 106 near the diaphragm layer 102 is provided with a groove, and the lower electrode 105 is filled in the groove; the support block 103 separates the diaphragm layer 102 and the substrate The space between 106 is divided into a closed cavity 104, and the cavity 104 corresponds to the position of the lower electrode 105.
在一种可选的实施方式中，上电极101为沉积在振膜层102上的导电层，导电层的厚度为0.6微米；导电层的材料包括：铝、铜、银中的任一种。In an alternative embodiment, the upper electrode 101 is a conductive layer deposited on the diaphragm layer 102, and the thickness of the conductive layer is 0.6 microns; the material of the conductive layer includes any one of aluminum, copper, and silver.
本实施例中，不限定导电层的具体厚度，本领域技术人员可以根据实 际需要进行调整设置。具体地，可以采用化学气相沉积、蒸镀、溅射中的任一种方式在上电极101上沉积导电层。In this embodiment, the specific thickness of the conductive layer is not limited, and those skilled in the art may adjust the settings according to actual needs. Specifically, any one of chemical vapor deposition, evaporation, and sputtering may be used to deposit a conductive layer on the upper electrode 101.
本实施例中，当在上电极101和下电极105之间施加直流电压时，强静电场将振膜层102拉向衬底，然后再在上电极101和下电极105之间施加交流电压，此时振膜层102就会发生振动而产生超声波。相反，在上电极101和下电极105之间施加适当的直流偏置电压后，振膜层102在超声波作用下发生振动，此时上电极101和下电极105之间的电容发生变化，通过检测这种变化实现超声波的接收。In this embodiment, when a DC voltage is applied between the upper electrode 101 and the lower electrode 105, the strong electrostatic field pulls the diaphragm layer 102 toward the substrate, and then an AC voltage is applied between the upper electrode 101 and the lower electrode 105. At this time, the diaphragm layer 102 vibrates to generate ultrasonic waves. Conversely, after an appropriate DC bias voltage is applied between the upper electrode 101 and the lower electrode 105, the diaphragm layer 102 vibrates under the action of ultrasonic waves. At this time, the capacitance between the upper electrode 101 and the lower electrode 105 changes. This change enables the reception of ultrasonic waves.
在一种可选的实施方式中，衬底106可以为硅基衬底，硅基衬底上设置有集成的控制电路，集成的控制电路与下电极105电连接，上电极101接地。可选地，本实施例中，下电极105可以作为阳极，上电极101可以作为阴极。在实际使用时，由于上电极101是整面电极，因此将上电极101接地，通过控制电路来对下电极105进行独立控制，从而形成了多个超声换能器阵元结构。这种方式，可以简化引线结构，方便超声换能器的集成和布线。In an alternative embodiment, the substrate 106 may be a silicon-based substrate, and an integrated control circuit is provided on the silicon-based substrate, the integrated control circuit is electrically connected to the lower electrode 105, and the upper electrode 101 is grounded. Alternatively, in this embodiment, the lower electrode 105 may serve as an anode, and the upper electrode 101 may serve as a cathode. In actual use, since the upper electrode 101 is a full-surface electrode, the upper electrode 101 is grounded, and the lower electrode 105 is independently controlled by a control circuit, thereby forming a plurality of ultrasonic transducer array element structures. In this way, the lead structure can be simplified, which facilitates the integration and wiring of the ultrasonic transducer.
在一种可选的实施方式中，振膜层102的材料包括：氮化物，或者氧化物；振膜层的厚度为：0.5微米。In an alternative embodiment, the material of the diaphragm layer 102 includes: nitride or oxide; the thickness of the diaphragm layer is: 0.5 μm.
本实施例中，可以采用Si3N4材料制作振膜层，振膜层的厚度是决定发射和接受声波的共振频率的重要参数，因此，可以根据实际应用情况进行设置。本实施例中不予具体限定。In this embodiment, the diaphragm layer can be made of Si3N4 material. The thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves. Therefore, it can be set according to the actual application. This embodiment is not specifically limited.
在一种可选的实施方式中，凹槽的数量为2个及以上，每个凹槽中填充有下电极105。下电极的材料包括：铝、铜、银中的任一种。In an alternative embodiment, the number of grooves is 2 or more, and each groove is filled with the lower electrode 105. The material of the lower electrode includes any one of aluminum, copper, and silver.
在一种可选的实施方式中，空腔104的数量为2个及以上，每个空腔与至少一个下电极105的位置对应。In an alternative embodiment, the number of the cavity 104 is 2 or more, and each cavity corresponds to the position of at least one lower electrode 105.
本实施例中，空腔104的位置与下电极105的位置对应，当空腔104为多个时，相应的下电极105也为多个。参见图2，在衬底106上设置有三个凹槽，没给凹槽中填充金属材料，以形成下电极105。支撑块103介于振膜层102和衬底106之间，用于将振膜层102和衬底106之间空间分隔为多个密闭的空腔104。空腔104是为了给振膜层102的振动提供间隙。In this embodiment, the position of the cavity 104 corresponds to the position of the lower electrode 105. When there are multiple cavities 104, there are also multiple corresponding lower electrodes 105. Referring to FIG. 2, three grooves are provided on the substrate 106, and no metal material is filled in the grooves to form the lower electrode 105. The supporting block 103 is interposed between the diaphragm layer 102 and the substrate 106, and is used to divide the space between the diaphragm layer 102 and the substrate 106 into a plurality of closed cavities 104. The cavity 104 is to provide a gap for the vibration of the diaphragm layer 102.
本实施例，通过依次层叠设置的衬底、下电极、支撑块、振膜层、上电极；其中，衬底的靠近振膜层的一面上设置有凹槽，下电极填充于凹槽 内；支撑块将振膜层和衬底之间的空间分隔成密闭的空腔，且空腔与下电极的位置相对应。从而实现了下电极的阵列化，使得引线方式更加简单，便于对超声换能器阵元的发射和接收进行独立控制。In this embodiment, the substrate, the lower electrode, the support block, the diaphragm layer, and the upper electrode are stacked in this order; wherein, the side of the substrate close to the diaphragm layer is provided with a groove, and the lower electrode is filled in the groove; The support block divides the space between the diaphragm layer and the substrate into a closed cavity, and the cavity corresponds to the position of the lower electrode. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
图3为本发明实施例二提供的超声换能器的制作方法的流程示意图，如图3所示，本实施例中的方法，可以包括：FIG. 3 is a schematic flowchart of a method for manufacturing an ultrasonic transducer according to Embodiment 2 of the present invention. As shown in FIG. 3, the method in this embodiment may include:
S301、在第一衬底上沉积上电极。S301. Deposit an upper electrode on the first substrate.
本实施例中，上电极为整面电极，上电极的材料包括：铝、铜、银中的任一种。In this embodiment, the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
S302、在上电极上沉积振膜层。S302. Deposit a diaphragm layer on the upper electrode.
本实施例中，可以在上电极上沉积预设厚度的氮化硅层，氮化硅层构成振膜层。可选地，振膜层的材料还可以是氧化物；振膜层的厚度为：0.5微米。In this embodiment, a silicon nitride layer with a predetermined thickness may be deposited on the upper electrode, and the silicon nitride layer constitutes the diaphragm layer. Optionally, the material of the diaphragm layer may also be oxide; the thickness of the diaphragm layer is: 0.5 μm.
可选地，可以采用Si3N4材料制作振膜层，振膜层的厚度是决定发射和接受声波的共振频率的重要参数，因此，可以根据实际应用情况进行设置。本实施例中不予具体限定。Alternatively, Si3N4 material can be used to make the diaphragm layer, and the thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves, and therefore, it can be set according to the actual application. This embodiment is not specifically limited.
图4为在第一衬底上依次制作上电极和振膜层的结构示意图；如图4所示，首先在第一衬底501上沉积上电极502和振膜层503，然后在振膜层503上沉积支撑层504。具体地，可以采用化学气相沉积、蒸镀、溅射中的任一种方式在第一衬底上沉积导电层。FIG. 4 is a schematic structural view of sequentially manufacturing an upper electrode and a diaphragm layer on a first substrate; as shown in FIG. 4, first, an upper electrode 502 and a diaphragm layer 503 are deposited on a first substrate 501, and then on the diaphragm layer The support layer 504 is deposited on 503. Specifically, any one of chemical vapor deposition, evaporation, and sputtering may be used to deposit the conductive layer on the first substrate.
S303、在振膜层上沉积支撑层，并对支撑层进行图形化处理，得到对应的支撑块。S303. Deposit a support layer on the diaphragm layer, and perform graphic processing on the support layer to obtain a corresponding support block.
本实施例中，可以通过化学气相沉积、蒸镀、溅射中的任一种方式在振膜层上沉积支撑层，支撑层的材料可以是容易生成键合结构的材料，例如Ge。进一步地，可以采用光刻、刻蚀工艺在支撑层上形成支撑块的形状。In this embodiment, the support layer may be deposited on the diaphragm layer by any one of chemical vapor deposition, evaporation, and sputtering. The material of the support layer may be a material that easily generates a bonding structure, such as Ge. Further, photolithography and etching processes may be used to form the shape of the support block on the support layer.
图5为在振膜层上制作支撑层的结构示意图，如图5所示，支撑块5041位于振膜层503上，支撑块5041的形状可以是矩阵、多边形等等。FIG. 5 is a schematic structural diagram of a support layer made on the diaphragm layer. As shown in FIG. 5, the support block 5041 is located on the diaphragm layer 503. The shape of the support block 5041 may be a matrix, a polygon, or the like.
S304、在第二衬底的第一表面上开设凹槽。S304: Open a groove on the first surface of the second substrate.
本实施例中，可以通过光刻和刻蚀工艺在第二衬底的第一表面上开设多个凹槽。图6为在第二衬底的第一表面上开设凹槽后的结构示意图，如图6所示，可以在第二衬底505的第一表面上开设三个凹槽506。In this embodiment, multiple grooves may be formed on the first surface of the second substrate through photolithography and etching processes. FIG. 6 is a schematic structural view after a groove is formed on the first surface of the second substrate. As shown in FIG. 6, three grooves 506 can be formed on the first surface of the second substrate 505.
S305、在凹槽内填充金属层，金属层构成下电极和键合区。S305, a metal layer is filled in the groove, and the metal layer constitutes the lower electrode and the bonding area.
图7为在凹槽内填充金属层后的结构示意图，参见图6、图7，可以通电镀或者溅镀工艺，在凹槽506内填充金属层，金属层构成下电极5071和键合区5072，金属层的材料包括：铝、铜、银中的任一种。FIG. 7 is a schematic diagram of the structure after filling the groove with a metal layer. Referring to FIGS. 6 and 7, a metal layer can be filled in the groove 506 by electroplating or sputtering. The material of the metal layer includes any one of aluminum, copper, and silver.
S306、将第二衬底的第一表面的键合区与支撑块键合。S306: Bond the bonding area on the first surface of the second substrate to the support block.
图8为第二衬底的第一表面的键合区与支撑块键合后的结构示意图，如图8所示，将第二衬底的键合区5072的金属层与支撑块504形成共晶键合。例如，当金属层采用铝AL，支撑块采用Ge时，可以形成Al-Ge共晶键合。FIG. 8 is a schematic structural view of the bonding area of the first surface of the second substrate after bonding with the support block. As shown in FIG. 8, the metal layer of the bonding area 5072 of the second substrate and the support block 504 are formed together Crystalline bonding. For example, when aluminum AL is used for the metal layer and Ge is used for the support block, Al-Ge eutectic bonding can be formed.
S307、去除第一衬底，得到超声换能器。S307. Remove the first substrate to obtain an ultrasonic transducer.
本实施例中，可以刻蚀工艺去掉图8中的第一衬底501，从而得到超声换能器。图9为制作完成的一超声换能器的结构示意图。In this embodiment, the first substrate 501 in FIG. 8 can be removed by an etching process, thereby obtaining an ultrasonic transducer. FIG. 9 is a schematic structural diagram of an ultrasonic transducer that is completed.
本实施例，通过在第一衬底上沉积上电极；在上电极上沉积振膜层；在振膜层上沉积支撑层，并对支撑层进行图形化处理，得到对应的支撑块；在第二衬底的第一表面上开设凹槽；在凹槽内填充金属层，金属层构成下电极和键合区；将第二衬底的第一表面的键合区与支撑块键合；去除第一衬底，得到超声换能器。从而实现了下电极的阵列化，使得引线方式更加简单，便于对超声换能器阵元的发射和接收进行独立控制。In this embodiment, by depositing an upper electrode on the first substrate; depositing a diaphragm layer on the upper electrode; depositing a support layer on the diaphragm layer, and graphically processing the support layer to obtain a corresponding support block; A groove is formed on the first surface of the second substrate; a metal layer is filled in the groove, the metal layer constitutes the lower electrode and the bonding area; the bonding area of the first surface of the second substrate is bonded to the support block; removed On the first substrate, an ultrasonic transducer is obtained. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
图10为本发明实施例三提供的超声换能器的制作方法的流程示意图，如图10所示，本实施例中的方法，可以包括：FIG. 10 is a schematic flowchart of a method for manufacturing an ultrasonic transducer according to Embodiment 3 of the present invention. As shown in FIG. 10, the method in this embodiment may include:
S401、在集成电路的晶圆的第一表面上开设凹槽。S401: Create a groove on the first surface of the integrated circuit wafer.
图11为在集成电路的晶圆的第一表面上开设凹槽的结构示意图，如图11所示，可以通过光刻和刻蚀工艺在集成电路的晶圆601的第一表面上开凹槽。FIG. 11 is a schematic structural view of a groove formed on the first surface of the integrated circuit wafer. As shown in FIG. 11, a groove can be formed on the first surface of the integrated circuit wafer 601 through photolithography and etching processes .
S402、在凹槽内填充金属层，金属层构成下电极。S402. Fill the groove with a metal layer, and the metal layer constitutes the lower electrode.
本实施例中，可以通电镀或者溅镀工艺，在凹槽内填充金属层602，金属层602构成下电极，金属层602的材料包括：铝、铜、银中的任一种。图12为在凹槽内填充金属层后的结构示意图。In this embodiment, a metal layer 602 can be filled in the groove through an electroplating or sputtering process. The metal layer 602 constitutes a lower electrode. The material of the metal layer 602 includes any one of aluminum, copper, and silver. 12 is a schematic diagram of the structure after filling the groove with a metal layer.
S403、在晶圆的第一表面和金属层上沉积支撑层。S403. Deposit a support layer on the first surface of the wafer and the metal layer.
S404、在支撑层上开设凹槽，并在凹槽内填充牺牲层。S404: Open a groove on the support layer, and fill the sacrificial layer in the groove.
图13为在支撑层的凹槽内填充牺牲层后的结构示意图，如图13所示，可以通过光刻和刻蚀工艺在支撑层603上开设凹槽，然后在凹槽内填充牺 牲层604，牺牲层604的材料可以是氧化硅或者多晶硅材料。FIG. 13 is a schematic diagram of the structure after filling the sacrificial layer in the groove of the support layer. As shown in FIG. 13, a groove can be opened in the support layer 603 through photolithography and etching processes, and then the sacrificial layer 604 can be filled in the groove The material of the sacrificial layer 604 may be silicon oxide or polysilicon material.
S405、在支撑层和牺牲层上沉积振膜层。S405. Deposit a diaphragm layer on the support layer and the sacrificial layer.
图14为在支撑层和牺牲层上沉积振膜层后的结构示意图，如图14所示，可以在支撑层603和牺牲层604上沉积预设厚度的氮化硅层，氮化硅层构成振膜层605。可选地，振膜层605的材料还可以是氧化物；振膜层的厚度为：0.5微米。可选地，可以采用Si3N4材料制作振膜层，振膜层的厚度是决定发射和接受声波的共振频率的重要参数，因此，可以根据实际应用情况进行设置。本实施例中不予具体限定。FIG. 14 is a schematic diagram of the structure after depositing the diaphragm layer on the support layer and the sacrificial layer. As shown in FIG. 14, a silicon nitride layer with a predetermined thickness can be deposited on the support layer 603 and the sacrificial layer 604.振膜 层 605. Optionally, the material of the diaphragm layer 605 may also be oxide; the thickness of the diaphragm layer is: 0.5 μm. Alternatively, Si3N4 material can be used to make the diaphragm layer, and the thickness of the diaphragm layer is an important parameter that determines the resonance frequency of transmitting and receiving sound waves, and therefore, it can be set according to the actual application. This embodiment is not specifically limited.
S406、在振膜层上沉积上电极。S406. Deposit an upper electrode on the diaphragm layer.
本实施例中，可以通过化学气相沉积、蒸镀、溅射中的任一种方式在振膜层上沉积上电极，上电极为整面电极，上电极的材料包括：铝、铜、银中的任一种。In this embodiment, the upper electrode can be deposited on the diaphragm layer by any of chemical vapor deposition, evaporation, and sputtering. The upper electrode is a full-face electrode. The material of the upper electrode includes: aluminum, copper, silver Of any kind.
S407、制作贯穿上电极、振膜层，并到达牺牲层的释放孔。S407. Manufacture a release hole that penetrates the upper electrode and the diaphragm layer and reaches the sacrificial layer.
图15为制作释放孔后的结构示意图，如图15所示，释放孔607贯穿上电极606、振膜层605，并到达牺牲层604。可选地，可以通过光刻和刻蚀工艺制作贯穿上电极606、振膜层605，并到达牺牲层604的释放孔607。15 is a schematic view of the structure after the release hole is made. As shown in FIG. 15, the release hole 607 penetrates the upper electrode 606 and the diaphragm layer 605 and reaches the sacrificial layer 604. Optionally, a release hole 607 that penetrates through the upper electrode 606, the diaphragm layer 605, and reaches the sacrificial layer 604 can be made by photolithography and etching processes.
S408、通过释放孔，采用湿法工艺去除牺牲层，以生成空腔。S408. Using a wet process to remove the sacrificial layer through the release hole to generate a cavity.
参见图15，在图15的基础上采用湿法工艺去除牺牲层，以生成空腔。Referring to FIG. 15, a wet process is used to remove the sacrificial layer on the basis of FIG. 15 to generate a cavity.
S409、在上电极上沉积介质层，以形成密闭的空腔。S409. Deposit a dielectric layer on the upper electrode to form a closed cavity.
图16为制作完成的另一超声换能器的结构示意图，如图16所示，上电极606上沉积有介质层608，介质层608用于密封空腔609。FIG. 16 is a schematic structural diagram of another completed ultrasonic transducer. As shown in FIG. 16, a dielectric layer 608 is deposited on the upper electrode 606, and the dielectric layer 608 is used to seal the cavity 609.
本实施例，通过在集成电路的晶圆的第一表面上开设凹槽；在凹槽内填充金属层，金属层构成下电极；在晶圆的第一表面和金属层上沉积支撑层；在支撑层上开设凹槽，并在凹槽内填充牺牲层；在支撑层和牺牲层上沉积振膜层；在振膜层上沉积上电极；制作贯穿上电极、振膜层，并到达牺牲层的释放孔；通过释放孔，采用湿法工艺去除牺牲层，以生成空腔；在上电极上沉积介质层，以形成密闭的空腔，最终得到超声换能器。从而实现了下电极的阵列化，使得引线方式更加简单，便于对超声换能器阵元的发射和接收进行独立控制。In this embodiment, a groove is formed on the first surface of the integrated circuit wafer; a metal layer is filled in the groove, and the metal layer constitutes the lower electrode; a support layer is deposited on the first surface of the wafer and the metal layer; Open a groove on the support layer and fill the sacrificial layer in the groove; deposit a diaphragm layer on the support layer and the sacrificial layer; deposit an upper electrode on the diaphragm layer; make a penetrating upper electrode and a diaphragm layer and reach the sacrificial layer Through the release hole, the sacrificial layer is removed by a wet process to create a cavity; a dielectric layer is deposited on the upper electrode to form a closed cavity, and finally an ultrasonic transducer is obtained. Therefore, the array of the lower electrode is realized, the lead wire method is simpler, and it is convenient to independently control the transmission and reception of the ultrasonic transducer array element.
图17为本发明实施例四提供的超声换能器的制造设备的结构示意图，如图17所示，本实施例中的超声换能器的制造设备70包括：FIG. 17 is a schematic structural diagram of an ultrasonic transducer manufacturing apparatus provided in Embodiment 4 of the present invention. As shown in FIG. 17, the ultrasonic transducer manufacturing apparatus 70 in this embodiment includes:
处理器71以及存储器72；其中： Processor 71 and memory 72; where:
存储器72，用于存储可执行指令，该存储器还可以是flash(闪存)。The memory 72 is used to store executable instructions, and the memory may also be a flash (flash memory).
处理器71，用于执行存储器存储的可执行指令，以实现上述实施例涉及的方法中的各个步骤。具体可以参见前面方法实施例中的相关描述。The processor 71 is configured to execute executable instructions stored in the memory, so as to implement various steps in the method involved in the foregoing embodiments. For details, please refer to the related description in the foregoing method embodiment.
可选地，存储器72既可以是独立的，也可以跟处理器71集成在一起。Alternatively, the memory 72 may be independent or integrated with the processor 71.
当存储器72是独立于处理器71之外的器件时，超声换能器的制造设备70还可以包括：When the memory 72 is a device independent of the processor 71, the ultrasonic transducer manufacturing apparatus 70 may further include:
总线73，用于连接存储器72和处理器71。The bus 73 is used to connect the memory 72 and the processor 71.
此外，本申请实施例还提供一种计算机可读存储介质，计算机可读存储介质中存储有计算机执行指令，当用户设备的至少一个处理器执行该计算机执行指令时，用户设备执行上述各种可能的方法。In addition, the embodiments of the present application also provide a computer-readable storage medium in which computer-executable instructions are stored. When at least one processor of the user equipment executes the computer-executed instruction, the user equipment executes the above various possibilities Methods.
其中，计算机可读介质包括计算机存储介质和通信介质，其中通信介质包括便于从一个地方向另一个地方传送计算机程序的任何介质。存储介质可以是通用或专用计算机能够存取的任何可用介质。一种示例性的存储介质耦合至处理器，从而使处理器能够从该存储介质读取信息，且可向该存储介质写入信息。当然，存储介质也可以是处理器的组成部分。处理器和存储介质可以位于应用专用集成电路(ASIC)中。另外，该应用专用集成电路可以位于用户设备中。当然，处理器和存储介质也可以作为分立组件存在于通信设备中。Among them, the computer-readable medium includes a computer storage medium and a communication medium, where the communication medium includes any medium that facilitates transfer of a computer program from one place to another. The storage medium may be any available medium that can be accessed by a general-purpose or special-purpose computer. An exemplary storage medium is coupled to the processor so that the processor can read information from the storage medium and can write information to the storage medium. Of course, the storage medium may also be an integral part of the processor. The processor and the storage medium may be located in an application specific integrated circuit (ASIC). In addition, the application specific integrated circuit may be located in the user equipment. Of course, the processor and the storage medium may also exist as discrete components in the communication device.
本领域普通技术人员可以理解：实现上述各方法实施例的全部或部分步骤可以通过程序指令相关的硬件来完成。前述的程序可以存储于一计算机可读取存储介质中。该程序在执行时，执行包括上述各方法实施例的步骤；而前述的存储介质包括：只读存储器(ROM)、随机存取存储器(RAM)、磁碟或者光盘等各种可以存储程序代码的介质。Those of ordinary skill in the art may understand that all or part of the steps of the foregoing method embodiments may be completed by a program instructing relevant hardware. The aforementioned program may be stored in a computer-readable storage medium. When the program is executed, the steps including the above method embodiments are executed; and the foregoing storage medium includes: a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk, etc., which can store program codes medium.
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本发明旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由下面的权利要求书指出。Those skilled in the art will easily think of other embodiments of the present disclosure after considering the description and practicing the invention disclosed herein. The present invention is intended to cover any variations, uses, or adaptive changes of the present disclosure that follow the general principles of the present disclosure and include common general knowledge or common technical means in the technical field not disclosed in the present disclosure . The description and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are pointed out by the following claims.
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所 附的权利要求书来限制。It should be understood that the present disclosure is not limited to the precise structure that has been described above and shown in the drawings, and that various modifications and changes can be made without departing from the scope thereof. The scope of the present disclosure is limited only by the attached claims.

Claims (18)

  1. 一种超声换能器，其特征在于，包括：依次层叠设置的衬底(106)、下电极(105)、支撑块(103)、振膜层(102)、上电极(101)；其中，所述衬底(106)的靠近振膜层(102)的一面上设置有凹槽，所述下电极(105)填充于所述凹槽内；所述支撑块(103)将所述振膜层(102)和所述衬底(106)之间的空间分隔成密闭的空腔(104)，且所述空腔(104)与所述下电极(105)的位置相对应。An ultrasonic transducer is characterized by comprising: a substrate (106), a lower electrode (105), a supporting block (103), a diaphragm layer (102), and an upper electrode (101) which are stacked in this order; wherein, A groove is provided on a surface of the substrate (106) close to the diaphragm layer (102), and the lower electrode (105) is filled in the groove; the support block (103) separates the diaphragm The space between the layer (102) and the substrate (106) is divided into a closed cavity (104), and the cavity (104) corresponds to the position of the lower electrode (105).
  2. 根据权利要求1所述的超声换能器，其特征在于，所述上电极(101)为沉积在所述振膜层(102)上的导电层，所述导电层的材料包括：铝、铜、银中的任一种。The ultrasonic transducer according to claim 1, wherein the upper electrode (101) is a conductive layer deposited on the diaphragm layer (102), and the material of the conductive layer includes: aluminum, copper , Any of silver.
  3. 根据权利要求1所述的超声换能器，其特征在于，所述振膜层(102)的材料包括：氮化物，或者氧化物。The ultrasonic transducer according to claim 1, characterized in that the material of the diaphragm layer (102) comprises: nitride or oxide.
  4. 根据权利要求1所述的超声换能器，其特征在于，所述凹槽的数量为2个及以上，每个凹槽中填充有下电极(105)。The ultrasonic transducer according to claim 1, wherein the number of the grooves is 2 or more, and each groove is filled with a lower electrode (105).
  5. 根据权利要求4所述的超声换能器，其特征在于，所述空腔(104)的数量为2个及以上，每个空腔与至少一个所述下电极(105)的位置对应。The ultrasonic transducer according to claim 4, characterized in that the number of the cavities (104) is 2 or more, and each cavity corresponds to the position of at least one lower electrode (105).
  6. 根据权利要求1所述的超声换能器，其特征在于，所述下电极的材料包括：铝、铜、银中的任一种。The ultrasonic transducer according to claim 1, wherein the material of the lower electrode includes any one of aluminum, copper, and silver.
  7. 根据权利要求1-6中任一项所述的超声换能器，其特征在于，所述衬底(106)为硅晶圆，所述硅晶圆上设置有控制电路，所述控制电路与所述下电极(105)电连接，所述上电极(101)接地。The ultrasonic transducer according to any one of claims 1-6, wherein the substrate (106) is a silicon wafer, and a control circuit is provided on the silicon wafer, and the control circuit is The lower electrode (105) is electrically connected, and the upper electrode (101) is grounded.
  8. 一种超声换能器的制造方法，其特征在于，用于制作权利要求1-7中任一项所述的超声换能器；所述方法包括：A method for manufacturing an ultrasonic transducer, characterized in that it is used for manufacturing the ultrasonic transducer according to any one of claims 1-7; the method includes:
    在第一衬底上沉积上电极；Depositing an electrode on the first substrate;
    在所述上电极上沉积振膜层；Depositing a diaphragm layer on the upper electrode;
    在所述振膜层上沉积支撑层，并对所述支撑层进行图形化处理，得到对应的支撑块；Depositing a support layer on the diaphragm layer, and graphically processing the support layer to obtain a corresponding support block;
    在第二衬底的第一表面上开设凹槽；Forming a groove on the first surface of the second substrate;
    在所述凹槽内填充金属层，所述金属层构成下电极和键合区；Filling a metal layer in the groove, the metal layer forming a lower electrode and a bonding area;
    将所述第二衬底的第一表面的键合区与所述支撑块键合；Bonding the bonding area of the first surface of the second substrate to the support block;
    去除第一衬底，得到所述超声换能器。The first substrate is removed to obtain the ultrasonic transducer.
  9. 根据权利要求8所述的方法，其特征在于，所述上电极为整面电极，所述上电极的材料包括：铝、铜、银中的任一种。The method according to claim 8, wherein the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
  10. 根据权利要求8所述的方法，其特征在于，在所述上电极上沉积振膜层，包括：The method according to claim 8, wherein depositing a diaphragm layer on the upper electrode comprises:
    在上电极上沉积预设厚度的氮化硅层，所述氮化硅层构成所述振膜层；沉积方式包括：化学气相沉积、蒸镀、溅射。A silicon nitride layer with a predetermined thickness is deposited on the upper electrode, and the silicon nitride layer constitutes the diaphragm layer; deposition methods include: chemical vapor deposition, evaporation, and sputtering.
  11. 根据权利要求8所述的方法，其特征在于，在第二衬底的第一表面上开设凹槽，包括：The method according to claim 8, wherein forming a groove on the first surface of the second substrate comprises:
    通过光刻和刻蚀工艺在第二衬底的第一表面上开设多个凹槽。Multiple grooves are formed on the first surface of the second substrate through photolithography and etching processes.
  12. 根据权利要求8-11任一项所述的方法，其特征在于，在所述凹槽内填充金属层，所述金属层构成下电极和键合区，包括：The method according to any one of claims 8 to 11, wherein a metal layer is filled in the groove, and the metal layer constitutes a lower electrode and a bonding region, including:
    通电镀或者溅镀工艺，在所述凹槽内填充金属层，所述金属层构成下电极和键合区，所述金属层的材料包括：铝、铜、银中的任一种。Through the electroplating or sputtering process, a metal layer is filled in the groove, the metal layer constitutes the lower electrode and the bonding area, and the material of the metal layer includes any one of aluminum, copper, and silver.
  13. 根据权利要求12所述的方法，其特征在于，将所述第二衬底的第一表面的键合区与所述支撑块键合，包括：The method according to claim 12, wherein bonding the bonding area of the first surface of the second substrate to the support block includes:
    将所述第二衬底的键合区的金属层与所述支撑块形成共晶键合。Forming a eutectic bond between the metal layer in the bonding region of the second substrate and the support block.
  14. 一种超声换能器的制造方法，其特征在于，用于制作权利要求1-7中任一项所述的超声换能器；所述方法包括：A method for manufacturing an ultrasonic transducer, characterized in that it is used for manufacturing the ultrasonic transducer according to any one of claims 1-7; the method includes:
    在集成电路的晶圆的第一表面上开设凹槽；Open a groove on the first surface of the integrated circuit wafer;
    在所述凹槽内填充金属层，所述金属层构成下电极；Filling a metal layer in the groove, the metal layer constituting a lower electrode;
    在所述晶圆的第一表面和金属层上沉积支撑层；Depositing a support layer on the first surface of the wafer and the metal layer;
    在所述支撑层上开设凹槽，并在所述凹槽内填充牺牲层；Forming a groove on the support layer, and filling the sacrificial layer in the groove;
    在支撑层和牺牲层上沉积振膜层；Deposit the diaphragm layer on the support layer and the sacrificial layer;
    在所述振膜层上沉积上电极；Depositing an upper electrode on the diaphragm layer;
    制作贯穿上电极、振膜层，并到达牺牲层的释放孔；Make a release hole that penetrates the upper electrode and diaphragm layer and reaches the sacrificial layer;
    通过所述释放孔，采用湿法工艺去除牺牲层，以生成空腔；Through the release hole, a sacrificial layer is removed by a wet process to generate a cavity;
    在所述上电极上沉积介质层，以形成密闭的空腔。A dielectric layer is deposited on the upper electrode to form a closed cavity.
  15. 根据权利要求14所述的方法，其特征在于，在集成电路的晶圆的第一表面上开设凹槽，包括：The method according to claim 14, wherein forming a groove on the first surface of the integrated circuit wafer includes:
    通过光刻和刻蚀工艺集成电路的晶圆的第一表面上开设凹槽。A groove is formed on the first surface of the integrated circuit wafer through photolithography and etching processes.
  16. 根据权利要求14所述的方法，其特征在于，在支撑层和牺牲层上沉积振膜层，包括：The method according to claim 14, wherein depositing the diaphragm layer on the support layer and the sacrificial layer comprises:
    在支撑层和牺牲层上沉积预设厚度的氮化硅层，所述氮化硅层构成所述振膜层；沉积方式包括：化学气相沉积、蒸镀、溅射。A silicon nitride layer with a predetermined thickness is deposited on the support layer and the sacrificial layer, and the silicon nitride layer constitutes the diaphragm layer; deposition methods include: chemical vapor deposition, evaporation, and sputtering.
  17. 根据权利要求14所述的方法，其特征在于，所述上电极为整面电极，所述上电极的材料包括：铝、铜、银中的任一种。The method according to claim 14, wherein the upper electrode is a full-surface electrode, and the material of the upper electrode includes any one of aluminum, copper, and silver.
  18. 根据权利要求14-17任一项所述的方法，其特征在于，制作贯穿上电极、振膜层，并到达牺牲层的释放孔，包括：The method according to any one of claims 14-17, characterized in that making the release hole penetrating the upper electrode and the diaphragm layer and reaching the sacrificial layer includes:
    通过光刻和刻蚀工艺制作贯穿上电极、振膜层，并到达牺牲层的释放孔。Through the photolithography and etching processes, a release hole that penetrates the upper electrode and the diaphragm layer and reaches the sacrificial layer is made.
PCT/CN2018/111580 2018-10-24 2018-10-24 Ultrasonic transducer and manufacturing method therefor WO2020082256A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201880002105.7A CN109561876A (en) 2018-10-24 2018-10-24 Ultrasonic transducer and its manufacturing method
PCT/CN2018/111580 WO2020082256A1 (en) 2018-10-24 2018-10-24 Ultrasonic transducer and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/111580 WO2020082256A1 (en) 2018-10-24 2018-10-24 Ultrasonic transducer and manufacturing method therefor

Publications (1)

Publication Number Publication Date
WO2020082256A1 true WO2020082256A1 (en) 2020-04-30

Family

ID=65872650

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/111580 WO2020082256A1 (en) 2018-10-24 2018-10-24 Ultrasonic transducer and manufacturing method therefor

Country Status (2)

Country Link
CN (1) CN109561876A (en)
WO (1) WO2020082256A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113993048A (en) * 2021-10-18 2022-01-28 上海交通大学 Ultrasonic transducer and forming method and control method thereof

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110225439B (en) * 2019-06-06 2020-08-14 京东方科技集团股份有限公司 Array substrate and sound generating device
CN110232363B (en) * 2019-06-18 2021-12-07 京东方科技集团股份有限公司 Ultrasonic fingerprint identification sensor, preparation method thereof and display device
CN112216784A (en) * 2019-07-12 2021-01-12 茂丞科技(深圳)有限公司 Wafer-level ultrasonic sensing device and manufacturing method thereof
CN112115753B (en) * 2019-07-22 2023-12-19 中芯集成电路（宁波）有限公司 Fingerprint identification module, manufacturing method thereof and electronic equipment
WO2021097749A1 (en) * 2019-11-21 2021-05-27 深圳市汇顶科技股份有限公司 Ultrasonic transducer, information acquisition element, and electronic device
WO2021189208A1 (en) * 2020-03-23 2021-09-30 深圳市汇顶科技股份有限公司 Ultrasonic transducer, ultrasonic scanning system, and processing method
WO2021217439A1 (en) * 2020-04-28 2021-11-04 深圳市汇顶科技股份有限公司 Ultrasonic transducer, information acquisition element and electronic device
CN111530723B (en) * 2020-06-19 2020-12-11 深圳市汇顶科技股份有限公司 Ultrasonic transducer manufacturing method, ultrasonic transducer and information acquisition element
CN113926679B (en) * 2020-06-29 2022-09-27 京东方科技集团股份有限公司 Acoustic wave transduction unit, preparation method thereof and acoustic wave transducer
CN114698372B (en) * 2020-10-27 2023-05-23 京东方科技集团股份有限公司 Acoustic wave transduction unit, manufacturing method thereof and acoustic wave transducer
CN114682472B (en) * 2022-03-25 2023-09-08 深圳市汇顶科技股份有限公司 Ultrasonic transducer and method of manufacturing the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100123366A1 (en) * 2008-11-19 2010-05-20 Canon Kabushiki Kaisha Electromechanical transducer and method for manufacturing the same
CN104907241A (en) * 2015-06-17 2015-09-16 河南大学 Broadband ultrasonic transducer composite mechanism satisfying multifrequency requirement
CN105413997A (en) * 2015-12-09 2016-03-23 华南理工大学 Flexible capacitor type micromachining ultrasonic transducer (CMUT) and preparation method thereof
CN105722609A (en) * 2013-11-18 2016-06-29 皇家飞利浦有限公司 Ultrasound transducer assembly
CN107921477A (en) * 2015-08-11 2018-04-17 皇家飞利浦有限公司 The capacitive micromachined ultrasonic transducer of patient safety with raising
CN107957273A (en) * 2018-01-16 2018-04-24 北京先通康桥医药科技有限公司 With the sensor pressed with ultrasound functions

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4790315B2 (en) * 2005-05-31 2011-10-12 オリンパスメディカルシステムズ株式会社 Capacitive ultrasonic transducer
US7373843B2 (en) * 2005-06-02 2008-05-20 Fidelica Microsystems Flexible imaging pressure sensor
EP2400893B1 (en) * 2009-02-27 2017-01-04 Koninklijke Philips N.V. Pre-collapsed cmut with mechanical collapse retention
CN102520032B (en) * 2011-12-05 2014-08-06 西安交通大学 CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof
CN102620878B (en) * 2012-03-15 2014-03-12 西安交通大学 Capacitive micromachining ultrasonic sensor and preparation and application methods thereof
CN105307975B (en) * 2013-03-15 2017-04-26 蝴蝶网络有限公司 Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same
CN103873010B (en) * 2014-03-17 2017-03-22 电子科技大学 Piezoelectric film bulk acoustic resonator and preparation method thereof
EP3334538A1 (en) * 2015-08-11 2018-06-20 Koninklijke Philips N.V. Capacitive micromachined ultrasonic transducers with increased lifetime
CN105540528A (en) * 2015-12-14 2016-05-04 中国科学院半导体研究所 MEMS (Micro-Electromechanical System) capacitive ultrasonic sensor and manufacturing method thereof
CN105703733A (en) * 2016-01-18 2016-06-22 佛山市艾佛光通科技有限公司 Method for preparing solid assembled film bulk acoustic wave resonator
CN105897211B (en) * 2016-05-18 2020-01-14 华南理工大学 Film bulk acoustic resonator with multiple resonant modes, preparation method thereof and filter
CN107025321B (en) * 2016-12-12 2021-02-09 佛山市艾佛光通科技有限公司 Design and preparation method of cavity type film bulk acoustic resonator filter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100123366A1 (en) * 2008-11-19 2010-05-20 Canon Kabushiki Kaisha Electromechanical transducer and method for manufacturing the same
CN105722609A (en) * 2013-11-18 2016-06-29 皇家飞利浦有限公司 Ultrasound transducer assembly
CN104907241A (en) * 2015-06-17 2015-09-16 河南大学 Broadband ultrasonic transducer composite mechanism satisfying multifrequency requirement
CN107921477A (en) * 2015-08-11 2018-04-17 皇家飞利浦有限公司 The capacitive micromachined ultrasonic transducer of patient safety with raising
CN105413997A (en) * 2015-12-09 2016-03-23 华南理工大学 Flexible capacitor type micromachining ultrasonic transducer (CMUT) and preparation method thereof
CN107957273A (en) * 2018-01-16 2018-04-24 北京先通康桥医药科技有限公司 With the sensor pressed with ultrasound functions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113993048A (en) * 2021-10-18 2022-01-28 上海交通大学 Ultrasonic transducer and forming method and control method thereof
CN113993048B (en) * 2021-10-18 2023-07-21 上海交通大学 Ultrasonic transducer, forming method thereof and control method thereof

Also Published As

Publication number Publication date
CN109561876A (en) 2019-04-02

Similar Documents

Publication Publication Date Title
WO2020082256A1 (en) Ultrasonic transducer and manufacturing method therefor
CN109643378B (en) Ultrasonic transducer and electronic device
CN110545731B (en) Imaging device with piezoelectric sensor
US10864553B2 (en) Piezoelectric transducers and methods of making and using the same
US8526642B2 (en) Piezoelectric micro speaker including weight attached to vibrating membrane and method of manufacturing the same
JP4539450B2 (en) Capacitive vibration sensor and manufacturing method thereof
JP4730162B2 (en) Ultrasonic transmitting / receiving device, ultrasonic probe, and manufacturing method thereof
CN107199169B (en) Ultrasonic transducer, ultrasonic fingerprint sensor and manufacturing method thereof
CN106999984B (en) Two-terminal CMUT equipment
US8114697B2 (en) Piezoelectric microphone, speaker, microphone-speaker integrated device and manufacturing method thereof
US20110062535A1 (en) Mems transducers
US11310606B2 (en) MEMS microphone
CN108419189A (en) Piezoelectric sensor
JP6665667B2 (en) Ultrasonic device, ultrasonic module, and ultrasonic measurement device
CN209531368U (en) Supersonic changer element and electronic device
JP6606034B2 (en) Capacitive detection type ultrasonic transducer and ultrasonic imaging apparatus including the same
TWI704100B (en) Mems device and process
JP2018029748A (en) Ultrasonic device, ultrasonic module, and ultrasonic measurement apparatus
GB2459863A (en) MEMS ultrasonic transducer array
US10303915B2 (en) Ultrasonic biometric sensor
US11376628B2 (en) Capacitive device and piezoelectric device
GB2459866A (en) MEMS transducers
US20190384958A1 (en) Fingerprint identification device and manufacturing method thereof
WO2021217439A1 (en) Ultrasonic transducer, information acquisition element and electronic device
US11921958B2 (en) Haptic interface

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18937980

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18937980

Country of ref document: EP

Kind code of ref document: A1