CN105897211B - Film bulk acoustic resonator with multiple resonant modes, preparation method thereof and filter - Google Patents
Film bulk acoustic resonator with multiple resonant modes, preparation method thereof and filter Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 80
- 238000000151 deposition Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 11
- 238000009616 inductively coupled plasma Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 48
- 238000000034 method Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
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- 238000011161 development Methods 0.000 description 2
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- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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Abstract
The invention discloses a film bulk acoustic resonator with multiple resonant modes, which sequentially comprises a silicon substrate and a piezoelectric stack structure, wherein a cavity between the piezoelectric stack structure and the silicon substrate forms a resonant cavity of the film bulk acoustic resonator; the piezoelectric stack structure sequentially comprises a bottom electrode, more than two layers of piezoelectric films and a top electrode from bottom to top. The film bulk acoustic resonator provided by the invention has a plurality of resonance points, and can be designed into a multi-passband filter in a cascading, bridging and other modes, so that the number of FBAR filters on a wireless terminal is greatly reduced.
Description
Technical Field
The invention relates to a bulk acoustic wave resonator, in particular to a film bulk acoustic wave resonator with multiple resonant modes, a preparation method thereof and a filter.
Background
Miniaturization, integration and high performance are requirements of the wireless terminal on frequency devices. The solutions of conventional rf/microwave band frequency devices are dielectric filters and surface acoustic wave filters. The former has better performance, but the latter has the defects of low working frequency, large insertion loss and low power capacity although the volume is too large. The Film Bulk Acoustic Resonator (FBAR) technology is the only radio frequency filter technology expected to be integrated at present, combines the advantages of superior performance of a dielectric filter and small volume of a Surface Acoustic Wave (SAW) filter, and overcomes the defects of the two. It has the advantages of high working frequency, large power capacity, low loss, small volume, good temperature stability and being integrated with Radio Frequency Integrated Circuit (RFIC) or Microwave Monolithic Integrated Circuit (MMIC).
The film bulk acoustic resonator adopts a sandwich structure of metal electrode-piezoelectric film-metal electrode, and the working principle is as follows: when an alternating voltage is applied to the two electrodes, an alternating electric field is formed in the piezoelectric film, the piezoelectric film is mechanically deformed due to the inverse piezoelectric effect, and the piezoelectric film expands or contracts along with the change of the applied electric field, so that oscillation is generated, and an electric signal is converted into an acoustic signal. At this time, bulk acoustic waves propagating along the thickness direction of the film are excited in the film and reflected back and forth between the two electrodes, and resonance is generated when the propagation distance of the bulk acoustic waves in the piezoelectric film is just an odd multiple of half wavelength. The acoustic wave loss at the resonance frequency is minimal, so that acoustic signals at the frequency can pass through the piezoelectric film layer, other acoustic signals which do not meet the resonance condition are attenuated, and the acoustic signals which are far away from the resonance frequency are attenuated more quickly. A single film bulk acoustic resonator generates resonance only at a certain frequency point and cannot be called as a filter. A bandpass filter meeting certain requirements can be formed by cascading, bridging, or coupling a plurality of film bulk acoustic resonators together in some manner, with the cascading most commonly used.
The current wireless mobile products are developed towards the fusion and integration of multiple functions, multiple frequency bands, multiple systems and multiple protocols besides the higher and higher requirements on volume power saving. Typically, each filter has a particular passband frequency response characteristic. Sometimes a system may need to process signals in two or more different frequency ranges simultaneously. The current method needs to connect a plurality of filters in parallel to realize a plurality of frequency passband filtering functions. Theoretically, multiple filters connected in parallel can achieve a multi-passband composite characteristic with the added characteristics of the individual filters. Under the condition of using the FBAR filter, because the indexes of the FBAR filter are related to the impedance characteristic of an external circuit, the complexity of the external impedance of the filter is increased by the parallel connection of a plurality of filters, so that the comprehensive characteristic is poor, and the debugging of the whole machine is difficult. In addition, multiple FBAR band pass filters are required to implement multiple frequency pass band filtering functions, which is inevitably not favorable for the development of the radio frequency front end towards miniaturization and integration.
Disclosure of Invention
In order to overcome the above-mentioned drawbacks and deficiencies of the prior art, an object of the present invention is to provide a multiple-resonance mode film bulk acoustic resonator, which has multiple resonance points, and can design a multiple passband filter by cascading, bridging, etc. to greatly reduce the number of FBAR filters on a wireless terminal.
The second object of the present invention is to provide a method for manufacturing the film bulk acoustic resonator with multiple resonant modes.
It is a further object of the present invention to provide a filter.
The purpose of the invention is realized by the following technical scheme:
the film bulk acoustic resonator comprises a silicon substrate and a piezoelectric stack structure in sequence, wherein a cavity between the piezoelectric stack structure and the silicon substrate forms a resonant cavity of the film bulk acoustic resonator; the piezoelectric stack structure sequentially comprises a bottom electrode, more than two layers of piezoelectric films and a top electrode from bottom to top; the areas of the piezoelectric films are different.
The cavity is a convex or concave cavity.
When the cavity is an upward convex cavity, the piezoelectric stack structure further comprises a supporting layer positioned below the bottom electrode, and the cavity between the supporting layer and the silicon substrate forms a resonant cavity of the film bulk acoustic resonator.
The piezoelectric film is an AlN piezoelectric film with the preferred C-axis orientation.
A method for preparing the film bulk acoustic resonator with multiple resonant modes comprises the following steps:
(1) preparing a groove on the top surface of the silicon substrate by using an etching technology;
(2) filling the groove with a sacrificial layer material;
(3) depositing a layer of metal bottom electrode on the sacrificial layer material, and patterning;
(4) depositing a layer of piezoelectric film by adopting radio frequency magnetron sputtering, and carrying out photoetching and ICP (inductively coupled plasma) etching on the piezoelectric film to obtain a plurality of layers of piezoelectric films, wherein the areas of the piezoelectric films are different;
(5) depositing a layer of metal top electrode on the exposed part of each layer of the piezoelectric film, and imaging; the bottom electrode, the multilayer piezoelectric film and the top electrode form a piezoelectric stack structure;
(6) and etching a sacrificial layer release through hole on the piezoelectric stack structure, and releasing the sacrificial layer through the sacrificial layer release through hole to obtain the film bulk acoustic resonator with multiple resonant modes.
A method for preparing the film bulk acoustic resonator with multiple resonant modes comprises the following steps:
(1) depositing a sacrificial layer on a silicon substrate, and etching to form a sacrificial layer bulge;
(2) preparing a supporting layer on the sacrificial layer;
(3) depositing a layer of metal bottom electrode on the supporting layer, and patterning;
(4) depositing a piezoelectric film by adopting radio frequency magnetron sputtering, and etching a plurality of piezoelectric films by photoetching and ICP (inductively coupled plasma);
(5) depositing a layer of metal top electrode on the exposed part of each layer of the piezoelectric film, and imaging; the supporting layer, the bottom electrode, the multilayer piezoelectric film and the top electrode form a piezoelectric stack structure;
(6) and etching a sacrificial layer release through hole on the piezoelectric stack structure, and releasing the sacrificial layer through the sacrificial layer release through hole to obtain the film bulk acoustic resonator with multiple resonant modes.
And the filter comprises the film bulk acoustic resonator with multiple resonant modes.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) according to the film bulk acoustic resonator, a single film bulk acoustic resonator can have a plurality of resonance points, so that the number of the film bulk acoustic resonators required for preparing a multi-passband filter is greatly reduced, and the development of radio frequency front end miniaturization is facilitated.
(2) The preparation method of the film bulk acoustic resonator is compatible with the conventional CMOS production process, reduces the actual manufacturing difficulty and is beneficial to the integration of the radio frequency front end.
(3) When the film bulk acoustic resonator provided by the invention is used for designing a filter, the complexity of external impedance can be reduced, and the debugging of the whole machine is convenient.
Drawings
Fig. 1 is a sectional view of a multiple resonance mode thin film bulk acoustic resonator of embodiment 1 of the present invention.
Fig. 2 is a graph showing the amplitude-frequency characteristics of the electrical impedance of the multiple resonant modes thin film bulk acoustic resonator according to embodiment 1 of the present invention.
Fig. 3 is a cross-sectional view of a multi-resonant mode thin film bulk acoustic resonator according to embodiment 2 of the present invention after a sacrificial layer is etched by photolithography.
Fig. 4 is a sectional view of a multiple resonance mode thin film bulk acoustic resonator of embodiment 2 of the present invention.
Fig. 5 is a graph showing the amplitude-frequency characteristic of the electrical impedance of the multi-resonant mode film bulk acoustic resonator of embodiment 2 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Example 1
The film bulk acoustic resonator with multiple resonant modes of the embodiment is prepared by the following preparation method:
1. etching a groove with the depth of 30 μm on the surface of the silicon substrate 1, and depositing Si by PECVD3N4The substrate protective layer 2 has a thickness of 200nm to protect the silicon substrate. As shown in fig. 1.
2. In Si3N4A layer of PSG (phosphosilicate glass) is deposited as a sacrificial layer on top of the PECVD.
3. The sacrificial layer is surface polished by a CMP process.
4. And depositing a layer of Mo bottom electrode 4 on the polished surface by direct current magnetron sputtering, wherein the thickness of the Mo bottom electrode is 200nm, and patterning by photoetching.
5. And depositing a C-axis preferred orientation AlN piezoelectric film by adopting radio frequency magnetron sputtering. And a multi-stack structure is etched by photoetching and ICP. The embodiment is a 3-layer AlN piezoelectric film, and the area size of the AlN piezoelectric film is gradually reduced from bottom to top; the thickness of each layer is 1 μm, 0.5 μm and 0.3 μm from bottom to top respectively.
6. Patterning a layer of Mo top electrode 6 with the thickness of 100nm through photoetching and electron beam evaporation; the bottom electrode 4, the multilayer piezoelectric film 5 and the top electrode 6 form a piezoelectric stack structure.
7. Etching sacrificial layer release via on the piezoelectric stack structure using XeF2The (xenon fluoride) gas releases the through holes through the sacrificial layer, obtaining the cavity 3. Finally, the film bulk acoustic resonator with multiple resonant modes is obtained, as shown in fig. 1.
Fig. 2 is a graph of amplitude-frequency characteristics of electrical impedance of the film bulk acoustic resonator prepared in this embodiment. As can be seen, the resonator generates resonance around 1.9GHz, 2.2GHz and 2.8 GHz.
The filter of this embodiment includes the film bulk acoustic resonator of this embodiment. Two series film bulk acoustic resonators and one parallel film bulk acoustic resonator are cascaded to form a ladder-shaped topological structure. The thickness of the top electrode of the parallel film bulk acoustic resonator is 10nm thicker than that of the series film bulk acoustic resonator. Thereby forming a three-passband filter.
Example 2
1. A layer of PSG (phosphosilicate glass) is deposited as a sacrificial layer 7 on the surface of the silicon substrate 1 by PECVD, and the sacrificial layer is patterned by photolithography. As shown in fig. 3.
2. Deposition of a layer of Si by PECVD3N4And the support layer 8 is 300nm thick.
3. And patterning a layer of Mo bottom electrode 4 with the thickness of 150nm by photoetching and magnetron sputtering.
4. And depositing a C-axis preferred orientation AlN piezoelectric film by adopting radio frequency magnetron sputtering. And a multi-stack structure is etched by photoetching and ICP. The embodiment is a 3-layer AlN piezoelectric film, and the area size of the AlN piezoelectric film is gradually reduced from bottom to top; the thickness of each layer is 2 μm, 0.8 μm and 0.5 μm from bottom to top.
5. A layer of Mo top electrode 6 with a thickness of 150nm was patterned by photolithography, electron beam evaporation. The supporting layer 8, the bottom electrode 4, the multilayer piezoelectric film 5 and the top electrode 6 form a piezoelectric stack structure.
6. Etching a sacrificial layer to release the via hole, using XeF2The (xenon fluoride) gas releases the through holes through the sacrificial layer, obtaining the cavity 3. Finally, the film bulk acoustic resonator with multiple resonant modes is obtained, as shown in fig. 4.
As shown in fig. 5, the amplitude-frequency characteristic diagram of the electrical impedance of the film bulk acoustic resonator prepared in this embodiment is shown. As can be seen, the resonator generates resonance around 1.12GHz, 1.25GHz and 1.55 GHz.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (7)
1. The film bulk acoustic resonator with multiple resonant modes is characterized by sequentially comprising a silicon substrate and a piezoelectric stack structure, wherein a cavity between the piezoelectric stack structure and the silicon substrate forms a resonant cavity of the film bulk acoustic resonator; the piezoelectric stack structure sequentially comprises a bottom electrode, more than two layers of piezoelectric films and a top electrode from bottom to top; the areas of the piezoelectric films are different, and the upper part of each piezoelectric film is completely or partially covered by the top electrode.
2. The multiple-resonant mode thin film bulk acoustic resonator according to claim 1, wherein the cavity is a convex or concave cavity.
3. The multiple-resonant mode thin-film bulk acoustic resonator of claim 1, wherein when the cavity is a convex cavity, the piezoelectric stack further comprises a support layer located below the bottom electrode, the cavity between the support layer and the silicon substrate forming a resonant cavity of the thin-film bulk acoustic resonator.
4. The multi-resonant mode thin-film bulk acoustic resonator of claim 1, wherein the piezoelectric film is a C-axis preferentially oriented AlN piezoelectric film.
5. A method of manufacturing the multi-resonant mode thin film bulk acoustic resonator of claim 1, comprising the steps of:
(1) preparing a groove on the top surface of the silicon substrate by using an etching technology;
(2) filling the groove with a sacrificial layer material;
(3) depositing a layer of metal bottom electrode on the sacrificial layer material, and patterning;
(4) depositing a layer of piezoelectric film by adopting radio frequency magnetron sputtering, and carrying out photoetching and ICP (inductively coupled plasma) etching on the piezoelectric film to obtain a plurality of layers of piezoelectric films, wherein the areas of the piezoelectric films are different;
(5) depositing a layer of metal top electrode on the exposed part of each layer of the piezoelectric film, and imaging; the bottom electrode, the multilayer piezoelectric film and the top electrode form a piezoelectric stack structure;
(6) and etching a sacrificial layer release through hole on the piezoelectric stack structure, and releasing the sacrificial layer through the sacrificial layer release through hole to obtain the film bulk acoustic resonator with multiple resonant modes.
6. A method of manufacturing the multi-resonant mode thin film bulk acoustic resonator of claim 1, comprising the steps of:
(1) depositing a sacrificial layer on a silicon substrate, and etching to form a sacrificial layer bulge;
(2) preparing a supporting layer on the sacrificial layer;
(3) depositing a layer of metal bottom electrode on the supporting layer, and patterning;
(4) depositing a piezoelectric film by adopting radio frequency magnetron sputtering, and etching a plurality of piezoelectric films by photoetching and ICP (inductively coupled plasma);
(5) depositing a layer of metal top electrode on the exposed part of each layer of the piezoelectric film, and imaging; the supporting layer, the bottom electrode, the multilayer piezoelectric film and the top electrode form a piezoelectric stack structure;
(6) and etching a sacrificial layer release through hole on the piezoelectric stack structure, and releasing the sacrificial layer through the sacrificial layer release through hole to obtain the film bulk acoustic resonator with multiple resonant modes.
7. A filter comprising the multi-resonant mode thin film bulk acoustic resonator of any one of claims 1 to 4.
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| JP2013223025A (en) * | 2012-04-13 | 2013-10-28 | Taiyo Yuden Co Ltd | Filter device, method of manufacturing filter device, and duplexer |
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