WO2020077649A1 - 一种cmp晶圆清洗设备 - Google Patents

一种cmp晶圆清洗设备 Download PDF

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Publication number
WO2020077649A1
WO2020077649A1 PCT/CN2018/111386 CN2018111386W WO2020077649A1 WO 2020077649 A1 WO2020077649 A1 WO 2020077649A1 CN 2018111386 W CN2018111386 W CN 2018111386W WO 2020077649 A1 WO2020077649 A1 WO 2020077649A1
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Prior art keywords
wafer
cleaning
unit
cmp
wafers
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PCT/CN2018/111386
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English (en)
French (fr)
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顾海洋
张志军
古枫
王东辉
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杭州众硅电子科技有限公司
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Publication of WO2020077649A1 publication Critical patent/WO2020077649A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes

Definitions

  • the invention belongs to the technical field of wafer grinding or polishing technology, and relates to a CMP wafer cleaning device applied to the field of wafer cleaning after CMP.
  • CMP Chemical Mechanical Planarization
  • polishing technology is the product of the development of integrated circuits towards miniaturization, multi-layering, thinning and planarization.
  • processed removals and polishing liquid will remain on the wafer surface.
  • the CMP equipment needs to be used with cleaning equipment.
  • the configuration of mainstream cleaning equipment includes a wafer vertical mode and a wafer horizontal mode, and the configuration of the cleaning unit of each equipment is different.
  • the vertical cleaning unit can save equipment space, and the process consistency of megasonic cleaning and brushing is better.
  • the drying effect is not as good as the horizontal mode, and the horizontal cleaning unit is not conducive to pollutants in time.
  • Remove the wafer surface Therefore, according to the characteristics of the cleaning unit and the spin-drying unit, it is necessary to comprehensively consider the placement method of the wafer and how to implement the conversion of the wafer placement method.
  • the CMP wafer cleaning equipment fails, how to ensure the safe storage of the wafers that have completed the polishing process so that the cleanliness of the wafer surface is not affected is also a problem that needs to be considered and resolved.
  • the purpose of the present invention is to provide corresponding transmission methods for different configurations of various cleaning units, and how to ensure safe storage of polished wafers when the CMP wafer cleaning equipment fails during the existing wafer cleaning process Proposed a solution that can effectively solve the problem of safe storage of wafers between program conversions.
  • the technical solution proposed by the present invention is a CMP wafer cleaning equipment, including a cleaning input unit, a megasonic cleaning unit, a first brushing unit, a second brushing unit, a spin-drying unit, a transfer robot and a flip
  • the manipulator is located above the cleaning equipment.
  • the transfer manipulator includes a horizontal movement axis, a vertical movement axis, and a wafer gripping device, which can transfer wafers between the units, and the flipping robot grips the wafers in the gripping device. And flip.
  • it also includes a buffer unit, which is located in front of the cleaning input unit and can temporarily store wafers.
  • the above equipment also includes a polishing wafer channel, which is located between the cleaning input unit and the megasonic cleaning unit, so that the wafer before the CMP step passes through the cleaning equipment when it enters the polishing area.
  • the wafer trays in the polished wafer channel and the cleaning input unit can be moved out simultaneously or separately to facilitate wafer loading operations.
  • a water spray device is provided in the buffer unit to prevent the wafer from drying without cleaning.
  • 2-10 wafers can be temporarily stored in the buffer unit.
  • the wafer is in a vertical direction during cleaning and brushing, and the wafer is in a horizontal direction during spin-drying.
  • the wafers are in the vertical direction during the cleaning, brushing, and spin-drying processes.
  • the transition of the wafer from the horizontal to the vertical state is reversed by the transfer robot, or it can be realized by an independent flip robot.
  • the transfer robot includes a wafer grabbing device 1 and a wafer grabbing device 2 in the direction of cleaning the input unit to the spin-drying unit.
  • the wafer grasping device one (603) near the spin-drying unit side can bring its own wafer turning function to save a turning manipulator.
  • the present invention has the following beneficial technical effects:
  • the buffer unit introduced by the present invention can make the entire cleaning equipment more fault-tolerant. During the wafer cleaning process, when the CMP wafer cleaning equipment fails, it can achieve safe storage for the polished wafers and can also be effective. Solve the problem of safe storage of wafers between program conversions.
  • the CMP wafer cleaning equipment may further include a polishing wafer channel, which is located between the cleaning input unit and the megasonic cleaning unit, so that the wafers before the CMP step enter the polishing area Cleaning equipment.
  • each cleaning unit may be in a vertical mode, or the spin-drying unit may be changed to a horizontal mode.
  • the transmission manipulator improves transmission efficiency by adopting a design that integrates two sets of gripping devices on a set of horizontal motion shafts, and avoids the potential collision hazards that may exist in the design of multiple sets of horizontal shafts.
  • FIG. 1 is a structural diagram of a wafer cleaning device of the present invention
  • Figure 2 is a perspective view of the wafer cleaning equipment
  • FIG. 3 is a three-dimensional effect diagram of the first embodiment
  • Fig. 5 is a perspective view of the third embodiment.
  • the wafer cleaning device for post-CMP cleaning includes a buffer unit 8, a cleaning input unit 1, a polishing wafer channel 10, a megasonic cleaning unit 2, a brushing unit 3, and a brushing unit 4. Drying unit 5, transmission manipulator 6 and turning manipulator 7.
  • the buffer unit 8, the cleaning input unit 1, the polishing wafer channel 10, the megasonic cleaning unit 2, the scrubbing unit 3, the scrubbing unit 4 and the spin-drying unit 5 in the CMP wafer cleaning apparatus are arranged in a row in sequence.
  • a group of transfer robots 6 is provided above the cleaning unit.
  • the transfer manipulator 6 includes a horizontal movement axis 601, a vertical movement axis 602, a wafer gripping device one 603 and a wafer gripping device two 604.
  • a polishing wafer channel 10 is provided in the cleaning unit.
  • the polished wafer needs to be cleaned immediately.
  • the wafer 9 to be cleaned is first put into the cleaning input unit 1.
  • the cleaning input unit 9 is designed with a water spray device.
  • the wafer picking device 2 604 of the transfer robot 6 picks up the wafer 9 in the cleaning input unit 1 along the vertical motion axis 602, and the wafer picking device 1 603 and The wafer picking device two 604 is transferred to the megasonic cleaning unit 2 along the horizontal movement axis 601, and the wafer picking device one 603 picks the wafer 9 in the megasonic cleaning unit 2 along the vertical movement axis 602.
  • the device two 604 places the wafer 9 into the megasonic cleaning unit 2 along the vertical movement axis 602.
  • the wafer picking device one 603 and the wafer picking device two 604 are transferred to the top of the brush cleaning unit 3 along the horizontal movement axis 601, and the wafer picking device two 604 is along the vertical movement axis 602 picks up the wafer 9 in the scrubbing unit 3, and the wafer picking device 603 places the wafer 9 into the scrubbing unit 3 along the vertical movement axis 602.
  • the wafer picking device one 603 and the wafer picking device two 604 are transferred along the horizontal movement axis 601 to the brush cleaning unit 4, and the wafer picking device one 603 is along the vertical movement axis 602 picks up the wafer 9 in the scrubbing unit 4, and the wafer picking device two 604 places the wafer 9 into the scrubbing unit 4 along the vertical movement axis 602.
  • the turning manipulator 7 grabs the wafer 9 in the grasping device 603 and turns it into the spin-drying unit 5. After the wafer 9 is processed in the spin-drying unit 5, the entire cleaning process is completed, and the wafer 9 is taken away by other equipment robots. In this way, the wafer 9 is cleaned.
  • the buffer unit can be designed to accommodate 2 to 10 wafers 9 according to the capacity of the polishing equipment.
  • the CMP wafer cleaning equipment of the present invention generally also integrates a CMP polishing equipment and an equipment front end unit module (EFEM). Between the CMP wafer cleaning device and the CMP polishing device, a robot hand for transferring wafers is provided.
  • EFEM equipment front end unit module
  • the wafer After the wafer is processed in the CMP polishing equipment, it is transferred by the robot to the cleaning input unit 1 of the present invention. With the participation of the transfer robot 6 and the flip robot 7, the wafer 9 passes through the megasonic cleaning unit 2 and the brush cleaning unit 3 in sequence The brushing unit 4 and the spin-drying unit 5 complete the entire cleaning process, and the robot in the EFEM finally removes the wafer 9 in the spin-drying unit 5.
  • the integrated CMP polishing device can simultaneously polish more than two wafers with different amounts. In order to prevent the CMP wafer cleaning device of the present invention from malfunctioning, the polished wafers cannot be safely stored.
  • a buffer unit 8 is designed in the cleaning equipment. According to the different processing capacity of the integrated CMP polishing equipment, the buffer unit 8 can temporarily store 2 to 10 wafers, and a water spray device is designed in the buffer unit 8 to prevent the wafers from drying without cleaning.
  • the cleaning input unit 1 and the polishing wafer channel 10 may be designed to be movable.
  • the wafer carrier 11 in the cleaning input unit 1 is moved out of the tank to perform the wafer loading operation. After the wafer carrier 11 loads the wafer, it returns to the cleaning input unit 1 .
  • the wafer to be polished is placed on the wafer carrier 12 in the polishing wafer channel 10 from the EFEM unit, and the wafer carrier 12 can be moved out a corresponding distance to facilitate the removal of the wafer by the robot of the CMP polishing device.
  • the movement of the cleaning wafer carrier 11 and the channel wafer carrier 12 may be simultaneous or may be designed to move independently of each other. This design can shorten the stroke of the manipulator in the CMP polishing equipment and reduce the area of the equipment.
  • the wafer pick-up device 603 can be designed to have a wafer turning function. This can save a flip manipulator, but the transmission time will increase. This example can be used if the cleaning capacity allows.
  • all cleaning units are designed in a vertical manner, so that the wafer 9 is prevented from turning over when entering the spin-drying unit 5.
  • the wafer transmission unit has a simple mechanical structure and high transmission efficiency. This embodiment can be used when the process requirements of vertical spin-drying can meet the processing requirements.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明公开了一种CMP晶圆清洗设备，包括依次排列的清洗输入单元、兆声清洗单元、第一刷洗单元、第二刷洗单元、甩干单元，传输机械手和翻转机械手位于清洗设备的上方，传输机械手包括水平运动轴、垂直运动轴和晶圆抓取装置，可将晶圆在所述单元之间传输，翻转机械手将所述抓取装置中的晶圆抓取并翻转。除此之外，还包括缓冲单元，所述缓冲单元位于清洗输入单元的前方，可以临时存放晶圆。还包括抛光晶圆通道，其位于清洗输入单元和兆声清洗单元之间，方便CMP步骤前的晶圆进入抛光区域时穿过清洗设备。本发明引进了缓冲单元，当CMP晶圆清洗设备发生故障时，对于抛光好的晶圆就可以实现安全存储，也可以有效解决位于程序转换之间的晶圆的安全存储问题。

Description

一种CMP晶圆清洗设备 技术领域
本发明属于晶圆磨削或抛光工艺技术领域，涉及应用于CMP后的晶圆清洗领域的一种CMP晶圆清洗设备。
背景技术
随着半导体产业的迅速发展，集成电路特征尺寸不断趋于微细化，半导体晶片不断地朝小体积、高电路密集度、快速、低耗电方向发展，集成电路现已进入ULSI亚微米级的技术阶段。伴随着硅晶片直径的逐渐增大，元件内刻线宽度逐步缩小，金属层数的增多，因此半导体薄膜表面的高平坦化对器件的高性能、低成本、高成品率有着重要的影响，这导致对硅晶片表面的平整度要求将日趋严格。
目前，作为唯一能获得全局平面化效果的平整化技术化学机械抛光技术，CMP(Chemical Mechanical Planarization，化学机械平坦化)已经发展成集在线量测、在线终点检测、清洗等技术于一体的化学机械抛光技术，是集成电路向微细化、多层化、薄型化、平坦化工艺发展的产物。同时也是晶圆由200mm向300mm乃至更大直径过渡、提高生产率、降低制造成本、衬底全局平坦化所必需的工艺技术。在晶圆进行CMP加工后，会在晶圆表面残留加工的移除物和抛光液，为了及时去除晶圆表面的污染物，CMP设备需要搭配清洗设备使用。
目前，主流的清洗设备的配置有晶圆垂直方式和晶圆水平方式，每种设备的清洗单元配置又不相同。垂直方式的清洗单元可以节省设备空间，兆声清洗和刷洗的工艺一致性更好，但是甩干过程中由于受重力影响，干燥效果不如水平方式，而水平方式的清洗单元又不利于污染物及时移出晶圆表面。因此需要根据清洗单元和甩干单元的特性，综合考虑晶圆的放置方式，以及还要考虑晶圆放置方式的转换如何具体实现。另外，CMP晶圆清洗设备一旦发生故障时，已经完成抛光程序的晶圆如何确保安全存储，不致晶圆表面的清洁度受到影响也是一个需要考虑和解决的问题。
发明内容
本发明目的在于针对各种清洗单元的不同配置方案，提供相应的传输方式，并对现有晶圆清洗过程中当CMP晶圆清洗设备发生故障时，对于已经完成抛光的晶圆如何确保安全存储的问题提出一种解决方案，可以有效解决位于程序转换之间的晶圆的安全存储问题。
为此目的，本发明提出的技术方案为一种CMP晶圆清洗设备，包括依次排列的清洗输入单元、兆声清洗单元、第一刷洗单元、第二刷洗单元、甩干单元，传输机械手和翻转机械手位于清洗设备的上方，传输机械手包括水平运动轴、垂直运动轴和晶圆抓取装置，可将晶圆在所述单元之间传输，翻转机械手将所述抓取装置中的晶圆抓取并翻转。除此之外，还包括缓冲单元，所述缓冲单元位于清洗输入单元的前方，可以临时存放晶圆。
上述设备还包括抛光晶圆通道，其位于清洗输入单元和兆声清洗单元之间，方便CMP步骤前的晶圆进入抛光区域时穿过清洗设备。
抛光晶圆通道和清洗输入单元中的晶圆托架均可以同时或单独移出，方便进行装载晶圆操作。
在缓冲单元中设置喷水装置，防止晶圆未经清洗而干燥。
作为优选，在缓冲单元中可以临时存放2-10片晶圆。
作为优选，清洗和刷洗过程中晶圆处于垂直方向，在甩干过程中晶圆处于水平方向。
当垂直甩干的工艺要求可以满足加工要求时，清洗、刷洗、甩干过程中晶圆均处于垂直方向。
晶圆从水平到垂直状态的转变通过传输机械手翻转，也可以通过独立的翻转机械手实现。
传输机械手在清洗输入单元至甩干单元的方向上依次包括晶圆抓取装置一和晶圆抓取装置二。
在清洗容量允许的条件下，靠近甩干单元侧的晶圆抓取装置一(603)可以自带晶圆翻转功能，以省掉一个翻转机械手。
与现有技术相比，本发明具有以下有益技术效果：
1，本发明引进的缓冲单元可以让整个清洗设备容错能力更强，晶圆清洗过程中，当CMP晶圆清洗设备发生故障时，对于已经完成抛光的晶圆就可以实现安全存储，也可以有效解决位于程序转换之间的晶圆的安全存储问题。
2，本发明为更有效地利用设备的空间，CMP晶圆清洗设备还可以包括抛光晶圆通道，位于清洗输入单元和兆声清洗单元之间，方便CMP步骤前的晶圆进入抛光区域时穿过清洗设备。
3，根据晶圆清洗工艺要求的不同，各清洗单元可以全部为垂直方式，也可以将甩干单元变成水平方式。
4，传输机械手通过采用将两套抓取装置集成在一套水平运动轴上的设计，提高了传输效率，避免了多套水平轴的设计可能存在的相互碰撞的隐患。
附图说明
图1为本发明晶圆清洗设备的结构图；
图2为晶圆清洗设备的立体效果图；
图3为第一个实施例的立体效果图；
图4为第二个实施例的立体效果图；
图5为第三个实施例的立体效果图。
具体实施方式
下面结合附图对本发明作进一步详细的说明。
如图1和2所示，本发明提供的用于CMP后清洗的晶圆清洗设备包括缓冲单元8、清洗输入单元1、抛光晶圆通道10、兆声清洗单元2、刷洗单元3、刷洗单元4、甩干单元5、传输机械手6和翻转机械手7。
CMP晶圆清洗设备中的缓冲单元8、清洗输入单元1、抛光晶圆通道10、兆声清洗单元2、刷洗单元3、刷洗单元4和甩干单元5依次排成一排。在清洗单元的上方设置一组传输机械手6。所述传输机械手6包括水平运动轴601、垂直运动轴602、晶圆抓取装置一603和晶圆抓取装置二604。
为方便CMP之前的晶圆进入抛光区域时容易穿过清洗单元，在清洗单元中设置有抛光晶圆通道10。抛光后的晶圆需要立即进行清洗，待清洗晶圆9首先被放至清洗输入单元1，为防止晶圆9在等待的过程中变干燥，清洗输入单元9中设计有喷水装置。
待下一个清洗单元兆声清洗单元2完成加工后，传输机械手6的晶圆抓取装置二604沿垂直运动轴602抓取清洗输入单元1中的晶圆9，晶圆抓取装置一603和晶圆抓取装置二604沿水平运动轴601传输到兆声清洗单元2上方，晶圆抓取装置一603沿垂直运动轴602抓取兆声清洗单元2中的晶圆9，晶圆抓取装置二604沿垂直运动轴602放置晶圆9至兆声清洗单元2中。
待下一个清洗单元刷洗单元3完成加工后，晶圆抓取装置一603和晶圆抓取装置二604沿水平运动轴601传输到刷洗单元3上方，晶圆抓取装置二604沿垂直运动轴 602抓取刷洗单元3中的晶圆9，晶圆抓取装置一603沿垂直运动轴602放置晶圆9至刷洗单元3中。
待下一个清洗单元刷洗单元4完成加工后，晶圆抓取装置一603和晶圆抓取装置二604沿水平运动轴601传输到刷洗单元4上方，晶圆抓取装置一603沿垂直运动轴602抓取刷洗单元4中的晶圆9，晶圆抓取装置二604沿垂直运动轴602放置晶圆9至刷洗单元4中。
待下一个清洗单元甩干单元5完成加工后，翻转机械手7将抓取装置603中的晶圆9抓取并翻转放置甩干单元5中。晶圆9在甩干单元5中加工完毕后完成整个清洗流程，晶圆9被其他设备机械手取走。如此循环，进行晶圆9的清洗加工。
当清洗单元中的某一个或多个单元出现故障时，清洗输入单元1中的晶圆9将由抓取装置604放至缓冲单元8中。根据抛光设备的容量，缓冲单元可以设计成可容纳2至10片晶圆9的位置。
另外，本发明的CMP晶圆清洗设备一般还集成CMP抛光设备和设备前端单元模块(EFEM)。所述CMP晶圆清洗设备和CMP抛光设备之间设置有负责传输晶圆的机械手。
晶圆在CMP抛光设备中加工完成后，被机械手传输至本发明的清洗输入单元1中，在传输机械手6和翻转机械手7的参与下，晶圆9依次经过兆声清洗单元2、刷洗单元3、刷洗单元4和甩干单元5，完成整个清洗流程，EFEM中的机械手最后在甩干单元5中取走晶圆9。
所述集成的CMP抛光设备可同时抛光2片以上数量不等的晶圆，为了防止本发明的CMP晶圆清洗设备发生故障后，抛光后的晶圆无法安全存储，在本发明的CMP晶圆清洗设备中设计有缓冲单元8。根据集成的CMP抛光设备的加工容量不同，所述缓冲单元8中可以临时存放2片至10片晶圆，在缓冲单元8中设计有喷水装置，防止晶圆未经清洗而干燥。
作为实施例，如图3所示，清洗输入单元1和抛光晶圆通道10可以设计成可以移动的方式。当CMP抛光设备中有晶圆需要清洗时，清洗输入单元1中的晶圆托架11移出槽体，进行装载晶圆操作，晶圆托架11装载晶圆后，回到清洗输入单元1中。同样的，需要进行抛光的晶圆，从EFEM单元放至抛光晶圆通道10中的晶圆托架12上，晶圆托架12可以移出相应距离，方便CMP抛光设备的机械手取走晶圆。清洗晶圆托架11和通道晶圆托架12的移动既可以是同时的，也可以设计成以相互独立方式移动。此种 设计，可以缩短CMP抛光设备中机械手的行程，减少设备的占地面积。
作为第二个实施例，如图4所示，晶圆抓取装置一603可以设计成带晶圆翻转功能的方式。这样可以省掉一个翻转机械手，但是传输时间会有增加。在清洗容量允许的条件下可以采用此例。
作为第三个实施例，如图5所示，所有清洗单元设计成垂直方式，这样就避免了晶圆9在进入甩干单元5时进行翻转。晶圆传输单元机械结构简单，传输效率高。当垂直甩干的工艺要求可以满足加工要求时，可以采用此实施例。
以上具体实施方式的描述并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种CMP晶圆清洗设备，包括依次排列的清洗输入单元(1)、兆声清洗单元(2)、第一刷洗单元(3)、第二刷洗单元(4)、甩干单元(5)，传输机械手(6)和翻转机械手(7)位于清洗设备的上方，传输机械手(6)包括水平运动轴(601)、垂直运动轴(602)和晶圆抓取装置，可将晶圆在所述单元之间传输，翻转机械手(7)将所述晶圆抓取装置中的晶圆抓取并翻转，其特征在于，还包括缓冲单元(8)，所述缓冲单元(8)位于清洗输入单元(1)的前方，可以临时存放晶圆。
  2. 根据权利要求1所述的CMP晶圆清洗设备，其特征在于包括抛光晶圆通道(10)，位于所述清洗输入单元(1)和所述兆声清洗单元(2)之间，以方便待化学机械抛光的晶圆进入抛光区域时穿过清洗设备。
  3. 根据权利要求2所述的CMP晶圆清洗设备，其特征在于抛光晶圆通道(10)和清洗输入单元(1)中的晶圆托架均可以同时或单独移出，方便进行装载晶圆操作。
  4. 根据权利要求1所述的CMP晶圆清洗设备，其特征在于在缓冲单元(8)中设置喷水装置，防止晶圆未经清洗而干燥。
  5. 根据权利要求1所述的CMP晶圆清洗设备，其特征在于在缓冲单元(8)中可以临时存放若干片晶圆。
  6. 根据权利要求1所述的CMP晶圆清洗设备，其特征在于清洗和刷洗过程中晶圆处于垂直方向，在甩干过程中晶圆处于水平方向。
  7. 根据权利要求1所述的CMP晶圆清洗设备，其特征在于清洗、刷洗、甩干过程中晶圆均处于垂直方向。
  8. 根据权利要求1所述的CMP晶圆清洗设备，其特征在于晶圆在水平和垂直状态之间的转换通过传输机械手或独立的翻转机械手实现。
  9. 根据权利要求1所述的CMP晶圆清洗设备，其特征在于所述传输机械手包括晶圆抓取装置一(603)和晶圆抓取装置二(604)。
  10. 根据权利要求9所述的CMP晶圆清洗设备，其特征在于靠近甩干单元侧的晶圆抓取装置一(603)自带晶圆翻转功能，以省掉翻转机械手。
PCT/CN2018/111386 2018-10-15 2018-10-23 一种cmp晶圆清洗设备 WO2020077649A1 (zh)

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CN113113339B (zh) * 2019-09-06 2024-04-05 杭州众硅电子科技有限公司 一种晶圆传输机械手
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