WO2020063485A1 - 发光件的制造工艺与发光件 - Google Patents

发光件的制造工艺与发光件 Download PDF

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Publication number
WO2020063485A1
WO2020063485A1 PCT/CN2019/107068 CN2019107068W WO2020063485A1 WO 2020063485 A1 WO2020063485 A1 WO 2020063485A1 CN 2019107068 W CN2019107068 W CN 2019107068W WO 2020063485 A1 WO2020063485 A1 WO 2020063485A1
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layer
quantum dot
light
transparent adhesive
adhesive layer
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PCT/CN2019/107068
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English (en)
French (fr)
Inventor
康永印
杜向鹏
王海琳
周健海
兰允健
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纳晶科技股份有限公司
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Priority to US17/280,869 priority Critical patent/US12040426B2/en
Priority to JP2020570557A priority patent/JP7218950B2/ja
Publication of WO2020063485A1 publication Critical patent/WO2020063485A1/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/644Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body

Definitions

  • the present disclosure relates to the field of optoelectronics, and in particular, to a manufacturing process of a light-emitting element and a light-emitting element.
  • the combination of LED and light conversion material realizes white light for backlight or backlight module of display.
  • the more mature implementation process is to disperse the phosphor in organic silicone and add it to the LED chip to cure it in situ.
  • the water and oxygen stability of quantum dots is not as good as that of phosphors.
  • a new process is needed to realize the original quantum dot LED. Bit package.
  • the main purpose of the present disclosure is to provide a manufacturing process and a light emitting element of a light emitting element, so as to solve the problem that the light emitting element has uneven light emission due to the encapsulation process of the quantum dot material in the prior art.
  • a manufacturing process of a light-emitting element includes: step S1, manufacturing a quantum dot film; and step S2, providing an LED unit.
  • the LED unit includes at least one LED chip Step S3, a first transparent adhesive layer is disposed on the bare surface of each of the LED chips; Step S4, the quantum dot film is disposed on a surface of the first transparent adhesive layer away from the LED chip.
  • step S1 includes: step S11, providing a substrate layer; step S12, providing a first water and oxygen barrier layer on a surface of the substrate layer; and step S13, placing the first water and oxygen barrier layer away from the substrate
  • a light conversion layer is provided on the surface of the material layer, and the light conversion layer includes a quantum dot material; step S14, a second water and oxygen barrier layer is provided on a surface of the light conversion layer far from the substrate layer; preferably, in the step After step S13 and / or between step S11 and step S13, step S1 further includes: providing a thermally conductive layer on at least one surface of the light conversion layer.
  • the base material layer is a peelable base material layer.
  • the step S1 further includes: peeling the substrate layer.
  • the manufacturing process further includes: curing the first transparent adhesive layer, thereby realizing the quantum dot film and the first transparent adhesive layer.
  • the surface of the first transparent adhesive layer near the quantum dot film is preferably planar.
  • step S3 includes: setting a first transparent glue on the bare surface of each of the LED chips; curing the first transparent glue to form a first transparent glue layer; preferably, the quantum dots are bonded by an adhesive.
  • the film is disposed on the surface of the first transparent adhesive layer.
  • the manufacturing process further includes: S5.
  • a second transparent adhesive layer is provided on the exposed surface of the quantum dot film.
  • the step S1 includes: cutting the quantum dot film into a plurality of quantum dot sub-films; the step S4 includes: setting each of the quantum dot sub-films on a surface of the first transparent adhesive layer away from the LED chip, The projection of the quantum dot sub-film on the first plane correspondingly covers the projection of the LED chip on the first plane.
  • the first plane is a plane perpendicular to the thickness direction of the first transparent adhesive layer.
  • the size and shape of the projection of the quantum dot sub-film on the first plane is the same as the projection of the LED chip correspondingly covered on the first plane.
  • the LED unit further includes a substrate, and the LED chip is disposed on a surface of the substrate.
  • the structure including the LED unit, the quantum dot film, and the first transparent adhesive layer formed through the step S4 is divided.
  • a light-emitting element including: an LED unit including at least one LED chip; a first transparent adhesive layer provided on a surface of each of the LED chips; a quantum dot film, provided On the surface of the first transparent adhesive layer far from the LED chip.
  • the quantum dot film includes a plurality of quantum dot sub-films, and the projections of the quantum dot sub-films on the first plane one-to-one correspondingly cover the projections of the LED chips on the first plane, and the first plane is the same as the first plane.
  • the projections of the quantum dot sub-films on the first plane and the corresponding projections of the LED chips on the first plane have the same size and shape.
  • the quantum dot film includes: a light conversion layer including the quantum dot material; a thermally conductive layer disposed on at least one surface of the light conversion layer; and two water-oxygen barrier layers, each of which is a first water-oxygen layer.
  • the barrier layer and the second water-oxygen barrier layer, and the two water-oxygen barrier layers are respectively disposed on two opposite surfaces of the light conversion layer.
  • the material of the thermally conductive layer includes a thermally conductive material and a binder.
  • the thermally conductive material includes at least one of a thermally conductive metal, glass powder, ceramic powder, graphite, and carbon powder. It is further preferred that the thermally conductive material includes nano copper and / Or nano-silver wire.
  • the thermally conductive material includes nano-silver wires, and the length of the nano-silver wires is between 10 and 500 ⁇ m, and the diameter is between 30 and 20 ⁇ m.
  • the water-oxygen barrier layer includes a water-blocking layer and an oxygen-blocking layer which are sequentially stacked, and a material of the water-blocking layer includes epoxy resin, polyvinylidene chloride, polyvinylidene fluoride, and nano-sized ZnO particles.
  • the material of the oxygen blocking layer includes at least one of polyvinyl alcohol, an ethylene-vinyl alcohol copolymer, and an ethylene-vinyl acetate copolymer, wherein the oxygen blocking layer is disposed at a position close to the light conversion layer. side.
  • the light-emitting element further includes: a second transparent adhesive layer disposed on a surface of the quantum dot film remote from the first transparent adhesive layer.
  • a photovoltaic device including any one of the above-mentioned light emitting elements.
  • a quantum dot film is prepared first, instead of being cured by injecting quantum dot glue, the quantum dot material distribution in the light-emitting component structure obtained by this process is more uniform, and the light-emitting component emits more uniform light.
  • FIG. 1 shows a schematic diagram of a light-emitting element according to the present disclosure
  • FIG. 2 shows a schematic diagram of another light-emitting element of the present disclosure
  • FIG. 3 is a schematic structural diagram of a quantum dot film according to the present disclosure.
  • FIG. 4 is a schematic structural diagram of an embodiment of the present disclosure.
  • the present disclosure proposes a manufacturing process and a light emitting element.
  • a manufacturing process of a light-emitting element includes: step S1, manufacturing a quantum dot film 40; and step S2, providing an LED unit.
  • the LED unit includes at least An LED chip 20; step S3, a first transparent adhesive layer 30 is provided on the exposed surface of each of the LED chips 20, each of the LED chips 20 includes at least one LED chip 20; and step S4, the quantum dot film 40 is disposed on the above The surface of the first transparent adhesive layer 30 far from the LED chip 20.
  • a quantum dot film is first prepared, so that the quantum dot material distribution of the light-emitting element obtained is relatively uniform, and then the distribution uniformity of the quantum dot material can be maintained in subsequent processes, so that the light-emitting element emits light. Even.
  • the quantum dot film is formed first, and the quantum dot film can also protect the quantum dots in the subsequent manufacturing process engineering of the light-emitting part.
  • the process of manufacturing the quantum dot film 40 in the above step S1 includes: step S11, providing a substrate layer; step S12, setting a first water and oxygen barrier layer on the surface of the above substrate layer; step S13 A light conversion layer is provided on a surface of the first water-oxygen barrier layer away from the substrate layer, and the light conversion layer includes a quantum dot material; step S14, a light conversion layer is provided on a surface of the light conversion layer far from the substrate layer The second water and oxygen barrier layer.
  • step S1 further includes: providing a thermally conductive layer on at least one surface of the light conversion layer.
  • the thermally conductive layer may be one or two, and the two thermally conductive layers may be respectively disposed on the two surfaces of the light conversion layer.
  • the arrangement on the surface here is not necessarily in contact with the light conversion layer.
  • one water-oxygen barrier layer 43 may be disposed between the substrate layer and the thermally conductive layer 42, or may be disposed between the thermally conductive layer 42 and the light conversion layer. Between layers 41, another water-oxygen barrier layer 43 (second water-oxygen barrier layer) may be disposed between the thermally conductive layer 42 and the light conversion layer 41, or may be disposed on a side of the thermally conductive layer 42 away from the light conversion layer 41.
  • Figures 1 and 3 show part of the structure.
  • the heat-conducting layer 42 can lead out the heat emitted by the LED unit more quickly. At the same time, in combination with the water-oxygen barrier layer, the performance stability of the manufactured light-emitting component can be better ensured and the life can be longer. It should be noted that the order of the adjacent heat-conducting layer and the water-oxygen barrier layer can be changed.
  • the substrate layer is a peelable substrate layer.
  • the peelable substrate layer is selected from a UV film, a red film, or a release film, the UV film is peelable under UV light irradiation conditions, and the red film is peelable under heating conditions.
  • the peelable substrate layer may be disposed on both sides of the light conversion layer, and the peelable substrate layer may be used to protect the appearance of the quantum dot film.
  • the manufacturing process of a solution including two peelable substrate layers includes: dispersing quantum dots in glue to obtain quantum dot glue, and setting quantum dot glue on the peelable substrate layer to form quantum dots.
  • a glue layer, another substrate layer is provided on the quantum dot glue layer, and then cured.
  • the step S1 further includes: peeling the substrate layer.
  • the purpose of peeling the peelable substrate layer is to reduce the thickness of the quantum dot film.
  • the overall thickness of light-emitting parts also needs to be reduced, and the reduction of the quantum dot film thickness also needs to consider the stability of the quantum dot film, so it is very difficult to reduce the quantum dot film thickness. Things.
  • traditional PET is used as the substrate layer, and even though the thickness of PET can be reduced, when the ultra-thin PET is used as the substrate, the stiffness is insufficient, which may easily lead to poor uniformity of the thickness of the manufactured quantum dot film, which affects uniform light emission.
  • the application of the peelable substrate layer simultaneously improves the stability of the quantum dot film and can realize the advantages of an ultra-thin quantum dot film.
  • the quantum dot material in the light conversion layer includes a CdSe core, a Cd x Zn (1-x) Se shell layer, and a ZnSe z S (1-z) cladding layer on the outside of the CdSe core .
  • the core-shell quantum dot has a progressive energy level structure layer by layer, the lattice mismatch between each layer is small, the alloy shell layer composition is uniform, the size and morphology of the monodispersity are good, the fluorescence half-peak width is narrow, and the fluorescence quantum yield is High, high stability, simple synthesis process, few influencing factors, good repeatability.
  • the preparation of the core-shell quantum dots includes the following steps: S1, providing CdSe core quantum dots; S2, adding the CdSe core quantum dots to a first zinc precursor solution, and then adding the first cadmium precursor and the first selenium precursor.
  • the Cd x Zn (1-x) Se shell layer is coated with a ZnSe shell layer to purify and obtain a core-shell quantum dot intermediate product; or, a second selenium precursor and a first A mixed solution of a sulfur precursor (or a second selenium precursor and a first sulfur precursor are added without mixing), so that the above-mentioned Cd x Zn (1-x) Se shell is coated with ZnSe z S (1-z ) Shell layer, 0 ⁇ z ⁇ 1, purification to obtain a core-shell quantum dot intermediate product; or, adding a second selenium precursor and a first sulfur precursor to the solution after the reaction in step S2 above, thereby adding Cd x Zn the core-shell S4, the purified;
  • a mixed solution of a first cadmium precursor and a first selenium precursor is added to the solution dropwise, and a second cadmium precursor and a second sulfur
  • the mixed solution of the precursor is added to the solution dropwise.
  • the dropwise addition method can improve the size and morphology of the quantum dots, monodispersion and fluorescence quantum yield.
  • ZnSe z S (1-z) z when the shell 1, ZnSe z S (1- z) between the shell and the Cd y Zn (1-y) S shell further comprises ZnSe p S (1-p) shell, where 0 ⁇ p ⁇ 1.
  • the prepared light conversion layer contains 0.5-6 parts by mass of red quantum dots, 0.8-9 parts by mass of green quantum dots, 0.1-8 parts by mass of diffusion particles, and 77-98.6 parts by mass of polymer resin.
  • the wavelength range of red quantum dots is between 615-640nm, and the half-width is less than 40nm
  • the wavelength range of green quantum dots is between 515-540nm, and the half-width is less than 40nm
  • Particles and / or polymer particles having a particle size of 1-5 ⁇ m, and the diffusion particles are selected from one or more of titanium oxide, zirconia, silica, alumina, organic silica particles, PS, PC, and PMMA particles.
  • the material of the thermally conductive layer includes a thermally conductive material and an adhesive, so that the thermally conductive layer can be directly bonded to the light conversion layer.
  • the thermally conductive material includes at least one of thermally conductive metal, glass powder, ceramic powder, graphite, and carbon powder.
  • the thermally conductive material includes nano-copper and / or nano-silver wire. These two materials allow better heat conduction and light transmission.
  • the weight percentage of the material of the thermally conductive layer in the thermally conductive layer is between 0.01 and 20%, preferably between 0.1 and 2%.
  • the thermally conductive material includes the nano-silver wire, and the nano-silver wire has a length of 10 to 500 ⁇ m and a diameter of 30 to 20 ⁇ m. This can further ensure that a better heat conduction effect is obtained without affecting the luminous efficiency.
  • the visible light transmittance of the binder in the thermally conductive layer is more than 80%, and it has good thermal stability and light resistance.
  • the binder is selected from the group consisting of silicone, acrylate, polyurethane and epoxy.
  • the refractive index of the binder is between 1.4 and 1.65, which can further ensure that the thermally conductive layer does not affect the optical performance of the light-emitting component, and can improve the light output.
  • the above-mentioned water and oxygen barrier layer may be formed of an organic material, and may also be formed of an inorganic material and an organic material together.
  • the water-oxygen barrier layer of the organic material may be a multilayer combination of an oxygen-blocking layer and a water-blocking layer, or may be a water-oxygen barrier layer.
  • the inorganic material may be selected from at least one of a silicon oxide compound, an aluminum oxide compound, and a silicon nitrogen compound. These inorganic materials may be deposited on the light conversion layer using magnetron sputtering, atomic layer deposition, or chemical vapor deposition techniques. At least one surface is deposited.
  • the water-oxygen barrier layer when the water-oxygen barrier layer is formed of only an organic material, the water-oxygen barrier layer includes a water-blocking layer and an oxygen-blocking layer that are sequentially stacked, and the material of the water-blocking layer includes epoxy resin, polyisocyanate At least one of vinyl chloride, polyvinylidene fluoride, and nano-sized ZnO particles, and the material of the oxygen blocking layer includes at least one of polyvinyl alcohol, ethylene-vinyl alcohol copolymer, and ethylene-vinyl acetate copolymer.
  • a water-oxygen barrier layer has a simple manufacturing process, low cost, and high production efficiency, and does not need to purchase expensive magnetron sputtering or chemical deposition equipment.
  • the light conversion layer includes a quantum dot material, which may further include a phosphor.
  • the light conversion layer may include a red quantum dot material and a green quantum dot material, may also include a red quantum dot material and a green fluorescent material, and may further include a red fluorescent material and a green quantum dot material. Including red quantum dots or green quantum dots.
  • the foregoing light conversion layer may be one layer or multiple layers, for example, two layers, one layer is a red light conversion layer, and the other layer is a green light conversion layer. At least one of the light conversion layers includes Quantum dots.
  • the glue of the light conversion layer may be selected from quantum dot-compatible acrylic and acrylate polymers, or other suitable materials.
  • the thickness of the light conversion layer may range from 5 to 50 ⁇ m, preferably from 10 to 30 ⁇ m, and the total thickness of the quantum dot film is between 50 to 300 ⁇ m, preferably between 100 to 200 ⁇ m.
  • the process of disposing the first transparent adhesive layer 30 on the bare surface of each of the LED chips 20 includes: disposing a first transparent glue on the surface of each of the LED chips 20; curing the first transparent glue; The cured first transparent glue is planarized to form the first transparent glue layer 30.
  • the first transparent adhesive layer 30 is in a cured state, in order to more firmly bond the quantum dot film 40 to the surface of the first transparent adhesive layer 30, in an embodiment of the present disclosure, the above-mentioned quantum is bonded by an adhesive.
  • the dot film 40 is disposed on the surface of the first transparent adhesive layer 30.
  • the first transparent adhesive layer contains a thermally conductive material, thereby improving the thermal conductivity of the light-emitting component.
  • the quantum dot film 40 of the present disclosure may be a whole layer, as shown in FIG. 1, covering one LED chip 20. In other embodiments, it may also be a plurality of spaced quantum dot sub-films 400. As shown in FIG. 2, each quantum dot sub-film 400 corresponds to cover one LED chip 20.
  • the above “covering” means that the projection of the quantum dot film or the quantum dot sub-film on the first plane can cover the projection of the LED chip on the first plane.
  • the above step S1 includes: placing the above quantum dots The film 40 is divided into a plurality of quantum dot sub-films 400; the above step S4 includes: disposing each of the quantum dot sub-films 400 on a surface of the first transparent adhesive layer 30 away from the LED chip 20, so that the quantum dot sub-film 400
  • the projections on the first plane correspond to the projections of the LED chip 20 on the first plane, and the first plane is a plane perpendicular to the thickness direction of the first transparent adhesive layer 30.
  • the quantum dot sub-film can be transferred to the first transparent glue layer by adsorption, and corresponds to each LED.
  • the size and shape of the projection of each of the quantum dot sub-films 400 on the first plane and the corresponding projection of the LED chip 20 on the first plane are the same, as shown in FIG. 2 That is, the size and shape of the projection of the quantum dot sub-film and the projection of the corresponding LED chip are the same, so that the quantum dot sub-film can better cover the corresponding LED chip.
  • the first transparent adhesive layer in step S3 is in an uncured state.
  • step S4 after the quantum dot film is placed on the surface of the first transparent adhesive layer away from each LED chip, The first transparent adhesive layer is cured to achieve the bonding between the quantum dot film and the first transparent adhesive layer. It is preferable that the surface of the first transparent adhesive layer near the quantum dot film is a plane, so as to better achieve uniform light.
  • the manufacturing process further includes: A second transparent adhesive layer 50 is disposed on the exposed surface of the quantum dot film 40.
  • the structure shown in FIG. 2 is formed.
  • a surface of the second transparent adhesive layer 50 far from the quantum dot film 40 is a flat surface or a convex surface.
  • the surface of the second transparent adhesive layer 50 far from the quantum dot film 40 is not limited to being a flat surface or a convex surface. Depending on the specific situation, those skilled in the art can also set it as another uneven surface to improve the light output.
  • a lens is disposed above the quantum dot film 40 to improve the light output.
  • the thickness of the first transparent adhesive layer or the second transparent adhesive layer is between 5 and 100 ⁇ m, or the first transparent adhesive layer and the The total thickness of the second transparent adhesive layer is between 5 and 100 ⁇ m.
  • the materials of the first transparent adhesive layer and the second transparent adhesive layer in the present disclosure may be independently selected from at least one of modified silicone, acrylic, polyvinyl alcohol, and epoxy resin, and the two may be The same or different.
  • the material of the first transparent adhesive layer and the material of the second transparent adhesive layer in the present disclosure may be other materials, such as a polymer with high water and oxygen barrier properties or a polymer with high temperature resistance.
  • transparent means that the adhesive layer can transmit light. According to different performance requirements, the transparent adhesive layer may contain non-transparent substances such as scattering particles.
  • a material for preparing the first transparent adhesive layer and / or the second transparent adhesive layer includes a highly thermally conductive material.
  • the LED unit of the present disclosure may include a substrate, such as a PCB substrate, or may not include a PCB substrate. Those skilled in the art may choose to set the substrate in the LED unit or not to set the substrate according to the actual situation. When the substrate is set, the LED chip is set on the substrate. on the surface.
  • the quantum dot film is not segmented, but the structure including the LED unit, the quantum dot film, and the first transparent adhesive layer formed through the above step S4 is segmented.
  • the process is very simple, eliminating the need to cut a large number of sub-dot films into small quantum dot films, and then attaching the corresponding LED chips, cutting them and LED units simultaneously, improving production effectiveness.
  • the LED unit includes an LED wafer, and the size and shape of the fabricated quantum dot film is the same or similar to the size and shape of the LED wafer.
  • the size of the sliced light-emitting parts can be cut into various sizes according to specific needs.
  • the light-emitting element structure includes an LED unit, a first transparent adhesive layer 30 and a quantum dot film 40.
  • the LED unit includes at least one An LED chip, the LED unit includes at least one LED chip 20; a first transparent adhesive layer 30 is disposed on a surface of each of the LED chips; a quantum dot film 40 is disposed on a surface of the first transparent adhesive layer 30 remote from the LED chip .
  • the light-emitting element shown in FIG. 1 further includes a substrate 10 on which at least one LED chip is disposed.
  • the quantum dot film is fixed above the LED chip through a first transparent adhesive layer, and the first transparent adhesive layer has a certain adhesive force, and the quantum dot film can pass through the first transparent layer after being formed.
  • the adhesive layer is arranged above the LED chip, which avoids the problem of uneven distribution of quantum dots caused by directly injecting quantum dot materials into the LED chip for curing in the prior art.
  • the quantum dot material distribution in the quantum dot film is relatively small. Uniform, so that the light emitting element emits light more uniformly.
  • both front surfaces of the quantum dot film are planar and are evenly disposed on the first transparent adhesive layer.
  • the quantum dot film of the present disclosure may be a whole layer and cover one LED chip or multiple LED chips simultaneously, or may be multiple quantum dot sub-films, each quantum dot sub-film correspondingly covers one LED chip. .
  • the quantum dot film 40 includes a plurality of quantum dot sub-films 400. As shown in FIG. 2, the quantum dot sub-film 400 is on a first plane. The projections corresponding to cover the projections of the LED chip on the first plane, the first plane is a plane perpendicular to the thickness direction of the first transparent adhesive layer.
  • the quantum dot film 40 includes a light conversion layer 41, a thermally conductive layer 42, and two water-oxygen barrier layers 43.
  • the light conversion layer 41 includes quantum dots. Material; a thermally conductive layer 42 is provided on at least one surface of the light conversion layer 41; two water and oxygen barrier layers 43 are a first water and oxygen barrier layer and a second water and oxygen barrier layer, and the two water and oxygen barrier layers are provided separately On the two opposite surfaces of the light conversion layer described above.
  • the heat-conducting layer can lead out the heat emitted by the LED chip faster, and better ensure the performance stability of the fabricated light-emitting structure and have a longer life.
  • the water-oxygen barrier layer can prevent water vapor and oxygen from invading into the light conversion layer, ensuring the stable performance and long life of the light conversion layer.
  • the material of the above-mentioned heat-conducting layer includes a heat-conducting material and an adhesive, so that the heat-conducting layer can be directly adhered to the light conversion layer, and the thickness of the formed light-emitting component is ensured to be small, which meets the requirements of a lightweight structure.
  • thermally conductive material may be any material that can conduct heat in the prior art, and those skilled in the art may select a suitable thermally conductive material to form the thermally conductive layer of the present disclosure according to the actual situation.
  • the thermal conductive material includes at least one of thermal conductive metal, glass powder, ceramic powder, graphite, and carbon powder.
  • the thermally conductive material includes nano-copper and / or nano-silver wire. These two materials can conduct heat better.
  • the thermally conductive material includes the nano-silver wire, and the nano-silver wire has a length of 10 to 500 ⁇ m and a diameter of 30 to 20 ⁇ m. This can further ensure that a good thermal conductivity is achieved without affecting the luminous efficiency.
  • the above-mentioned water and oxygen barrier layer may be formed of an organic material, and may also be formed of an inorganic material and an organic material together.
  • the inorganic material may be selected from at least one of a silicon oxide compound, an aluminum oxide compound, and a silicon nitrogen compound. These inorganic materials may be deposited on at least one surface of the light conversion layer using magnetron sputtering, atomic layer deposition, or chemical vapor deposition techniques.
  • the water-oxygen barrier layer when the water-oxygen barrier layer is formed of only an organic material, the water-oxygen barrier layer includes a water-blocking layer and an oxygen-blocking layer that are sequentially stacked, and the material of the water-blocking layer includes epoxy At least one of polyvinylidene chloride, polyvinylidene fluoride, and nano-sized ZnO particles, and the material of the oxygen blocking layer includes at least one of polyvinyl alcohol, ethylene-vinyl alcohol copolymer, and ethylene-vinyl acetate copolymer.
  • the oxygen blocking layer is disposed on a side close to the light conversion layer.
  • Such a water-oxygen barrier layer has low manufacturing cost and high production efficiency, and does not need to buy expensive magnetron sputtering or chemical deposition equipment.
  • the light conversion layer of the present disclosure includes a quantum dot material, which may further include a phosphor.
  • the light conversion layer may include a red quantum dot material and a green quantum dot material, and may also include a red quantum dot material and
  • the green fluorescent material may also include a red fluorescent material and a green quantum dot material, and of course, it may also include only red quantum dots or green quantum dots.
  • the above-mentioned light conversion layer may be one layer or multiple layers, such as two layers. As shown in FIG. 4, one layer is a red light conversion layer, and the other layer is a green light conversion layer. At least one light conversion layer includes quantum dots.
  • the light-emitting element further includes a second transparent adhesive layer 50, and the second transparent adhesive layer 50 is disposed on the quantum dot film 40.
  • the surface away from the first transparent adhesive layer 30, and preferably the surface of the second transparent adhesive layer 50 away from the quantum dot film 40 is a flat surface or a convex surface.
  • the substrate for LEDs in the present disclosure may be a simple flat structure or a structure with a mounting groove as shown in FIG. 1 and FIG. 2. Those skilled in the art may set a suitable structure according to the actual situation.
  • the substrate is used to place the LED chip.
  • the substrate of the LED unit may be a component of the light-emitting component or a substrate temporarily used in the manufacturing process that does not constitute the component of the light-emitting component.
  • the circuits between the LED chips can be controlled in series or independently.
  • the LED chip is a blue light LED chip.
  • the LED chip in the present disclosure is not limited to the blue light LED chip, but may also be an LED chip that emits other light.
  • the quantum dot film in the light-emitting component of the present disclosure may be one or more, and may be one or more. It is set according to the actual situation.
  • the light conversion layer includes only one color corresponding light conversion
  • multiple quantum dot films can be provided, and the light conversion layer in each quantum dot film includes quantum dot materials corresponding to different colors to emit white light.
  • the LED chip is a blue light LED chip, it may include two quantum dot films, one is a green light quantum dot film, and the other is a red light quantum dot film. Divide.
  • a photovoltaic device including any one of the above-mentioned light emitting elements.
  • the photoelectric device may be a lighting device, a display device, a detection device, or the like.
  • the red quantum dot material and green quantum dot material in the examples were prepared by the following method.
  • the first exciton absorption peak was the synthesis of 570nm spherical CdSe quantum dots (3.7nm): CdO (0.0256g, 0.2mmol), HSt (0.1420g, 0.5mmol) and ODE (4mL) were placed in a 25mL three-necked flask, After agitating (argon) for 10 minutes, the temperature was raised to 280 ° C to obtain a clear solution, and the temperature was lowered to 250 ° C; 1 mL of a selenium powder suspension having a concentration of 0.1 mmol / mL was quickly injected into a three-necked flask to control the reaction temperature.
  • the manufacturing process of light-emitting parts includes:
  • the first step is to make a quantum dot film:
  • first water-oxygen barrier layer glue Apply a first water-oxygen barrier layer glue, a first heat-conductive layer glue, a light conversion layer glue, a second heat-conductive layer glue, a second water-oxygen barrier layer glue, and a second release film in order on the first release film, Then cured.
  • the light conversion layer includes a red quantum dot, a mixed layer of green quantum dots and an acrylate resin.
  • the red quantum dots are CdS / ZnSe core-shell quantum dots with a light emission wavelength of 630 nm
  • the green quantum dots are CdS / ZnSe core-shell light-emitting wavelengths
  • the thickness of the light conversion layer is 20 ⁇ m.
  • each first thermally conductive layer is 20 ⁇ m.
  • the thermally conductive layer includes nano-silver wire and acrylic monomer.
  • the length of the nano-silver wire is 200 ⁇ m and the diameter is 10 ⁇ m.
  • the weight percentage of the nano-silver wire is 10%.
  • Water and oxygen barrier layers are respectively provided on the surfaces of the thermally conductive layers away from the quantum dots.
  • the thickness of each water and oxygen barrier layer is 20 ⁇ m.
  • the water and oxygen barrier layer includes a water barrier layer and an oxygen barrier layer which are sequentially stacked. The layers are arranged in contact, the water blocking layer is a polyvinylidene chloride coating, and the material of the oxygen blocking layer includes a polyvinyl alcohol coating.
  • the two release films of the quantum dot film are peeled off and cut into a plurality of quantum dot sub-films by a cutting machine.
  • the quantum dot sub-films are as large as the LED chip and are ready for use.
  • the second step is to provide the LED unit:
  • a precision glue dispenser is used to install three spaced-apart LED chips on the base of the set circuit.
  • the LED chips are blue LED chips.
  • a glue of a first transparent glue layer is provided on the exposed surface of each of the LED chips, and the glue is an organic silica gel.
  • the quantum dot sub-films are arranged one by one on the surface of the glue of the first transparent adhesive layer that is far from each of the LED chips, and cured, so as to achieve the bonding of the first transparent adhesive layer and the quantum dot sub-film.
  • a second transparent adhesive layer is disposed on the exposed surface of the quantum dot sub-film.
  • the thickness of the second transparent adhesive layer is 50 ⁇ m, and the material of the second transparent adhesive layer is modified silicone.
  • FIG. 4 The schematic diagram of the obtained light-emitting part is shown in FIG. 4.
  • the manufacturing process of light-emitting parts includes:
  • the first step is to make a quantum dot film:
  • first water-oxygen barrier layer glue Apply a first water-oxygen barrier layer glue, a first heat-conductive layer glue, a light conversion layer glue, a second heat-conductive layer glue, a second water-oxygen barrier layer glue, and a second release film in order on the first release film, Then cured.
  • the light conversion layer includes a red quantum dot, a mixed layer of green quantum dots and an acrylate resin.
  • the red quantum dots are CdS / ZnSe core-shell quantum dots with a light emission wavelength of 630 nm
  • the green quantum dots are CdS / ZnSe core-shell light-emitting wavelengths
  • the thickness of the light conversion layer is 20 ⁇ m.
  • each first thermally conductive layer is 20 ⁇ m.
  • the thermally conductive layer includes nano-silver wire and acrylic.
  • the length of the nano-silver wire is 200 ⁇ m and the diameter is 10 ⁇ m.
  • the weight percentage of the nano-silver wire is 10%.
  • Water and oxygen barrier layers are respectively provided on the surfaces of the thermally conductive layers away from the quantum dots.
  • the thickness of each water and oxygen barrier layer is 20 ⁇ m.
  • the water and oxygen barrier layer includes a water barrier layer and an oxygen barrier layer which are sequentially stacked. The layers are arranged in contact with each other.
  • the water blocking layer is made of polyvinylidene chloride.
  • the material of the oxygen blocking layer includes a polyvinyl alcohol coating.
  • the two release films of the quantum dot film are peeled off, and the size of the quantum dot film is as large as that of the LED wafer to be processed, and is reserved.
  • the second step is to provide the LED unit:
  • the glue of the first transparent glue layer is coated on the bare surface of the LED wafer, and the glue is an organic silica gel.
  • the quantum dot film is correspondingly disposed on the surface of the glue of the first transparent adhesive layer that is far from the LED wafer, and is cured to achieve the bonding of the first transparent adhesive layer and the quantum dot film to obtain a quantum dot film LED emitter.
  • a wafer laser cutting machine is used to cut the quantum dot film LED light emitting body to obtain a small light emitting part.
  • the small light-emitting element is placed on the circuit substrate.
  • a second transparent adhesive layer is disposed on the exposed surface of the small light-emitting component.
  • the thickness of the second transparent adhesive layer is 50 ⁇ m, and the material of the second transparent adhesive layer is modified silicone.
  • FIG. 4 The schematic diagram of the obtained light-emitting part is shown in FIG. 4.
  • Example 1 The difference from Example 1 is that CdSe / CdZnSe / ZnSe / CdZnS / ZnS core-shell quantum dots with emission peak-to-peak wavelengths of 630 nm and 530 nm prepared by the above method are used.
  • a quantum dot glue is formed.
  • the quantum dot glue includes a mixture of red quantum dots, green quantum dots, and an acrylate resin (the formula of the quantum dot glue is the same as that in Example 1).
  • the quantum dot glue is directly injected into the LED chip for curing. After the second injection into the LED chip, curing is performed. The quantum dot glue to be injected next time is actually set on the quantum dot material layer after the last curing.
  • the method was used to test the reliability of the light-emitting components of the examples and comparative examples by using the method of lighting the LED chip in a 50 ° C oven and monitoring the change in optical properties to characterize the stability of the light-emitting components.
  • X1, X2, and X3 represent the X coordinates of the three quantum dot LED light emitting elements
  • Y1, Y2, and Y3 represent the Y coordinates of the three quantum dot LED light emitting elements.
  • the light-emitting part refers to three LED chips with quantum dot films made in the same batch.
  • a quantum dot film is prepared first, because the quantum dot material distribution in the quantum dot film can be more uniform, so the quantum dot material distribution of the light-emitting part obtained by this process is more uniform, and the Luminous uniformity.
  • the thinning of the light-emitting element is achieved by introducing a peelable substrate layer.

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Abstract

一种发光件的制造工艺与发光件。该发光件的制造工艺包括:步骤S1,制作量子点膜(40);步骤S2,提供LED单元,LED单元包括至少一个LED芯片(20);步骤S3,在各LED芯片(20)的裸露表面上设置第一透明胶层(30);步骤S4,将量子点膜(40)设置在第一透明胶层(30)的远离LED芯片(20)的表面上。该发光件的制造工艺,先制作好量子点膜(40),而不是采用注入量子点胶水固化,该工艺得到的发光件中的量子点材料分布较均匀,进而发光件的发光较均匀。

Description

发光件的制造工艺与发光件
本公开以2018年9月27日递交的、申请号为201811138381.4且名称为“发光件的制造工艺与发光件”的专利文件为优先权文件,其全部内容通过引用结合在本公开中。
技术领域
本公开涉及光电领域,具体而言,涉及一种发光件的制造工艺与发光件。
背景技术
LED和光转换物质的配合实现白光用于照明或者显示器的背光模组。目前,比较成熟的实现工艺是将荧光粉分散到有机硅胶加到LED芯片上固化实现原位封装,而量子点的水氧稳定性不如荧光粉,需要一种新的工艺实现量子点LED的原位封装。
参考荧光粉的方案,很容易想到将量子点分散到胶水中,再注入到LED芯片上固化封装,但是实际生产工艺中,由于设备限制,针对多个LED芯片需多次注入量子点胶水。一方面,多次量子点胶水的过程中会导致量子点失效,另一方面多层叠加的工艺容易导致固化后的厚度不均,从而使得量子点材料分布不均,进而导致同一批量子点LED芯片封装体之间色点也不均匀。
在背景技术部分中公开的以上信息只是用来加强对本文所描述技术的背景技术的理解,因此,背景技术中可能包含某些信息,这些信息对于本领域技术人员来说并未形成在本国已知的现有技术。
发明内容
本公开的主要目的在于提供一种发光件的制造工艺与发光件,以解决现有技术中的量子点材料的封装工艺导致发光件发光不均匀的问题。
为了实现上述目的,根据本公开的一个方面,提供了一种发光件的制造工艺,该制造工艺包括:步骤S1,制作量子点膜;步骤S2,提供LED单元,上述LED单元包至少一个LED芯片;步骤S3,在各上述LED芯片的裸露表面上设置第一透明胶层;步骤S4,将上述量子点膜设置在上述第一透明胶层的远离上述LED芯片的表面上。
进一步地,上述步骤S1包括:步骤S11,提供基材层;步骤S12,在上述基材层的表面上设置第一水氧阻隔层;步骤S13,在上述第一水氧阻隔层的远离上述基材层的表面上设置光转换层,上述光转换层包括量子点材料;步骤S14,在上述光转换层的远离上述基材层的表面上设置第二水氧阻隔层;优选地,在上述步骤S13之后和/或在上述步骤S11与上述步骤S13之间,上述步骤S1还包括:在上述光转换层的至少一个表面上设置导热层。
进一步地,上述基材层为可剥离的基材层。
进一步地,在上述步骤S14后,上述步骤S1还包括:对上述基材层进行剥离。
进一步地,上述第一透明胶层为未固化状态,在上述步骤S4之后,上述制造工艺还包括:对上述第一透明胶层进行固化,从而实现上述量子点膜和上述第一透明胶层的粘结,优选上述第一透明胶层靠近上述量子点膜的表面为平面。
进一步地,上述步骤S3包括:在各上述LED芯片的裸露表面上设置第一透明胶水;对上述第一透明胶水进行固化,形成第一透明胶层,优选地,通过粘结剂将上述量子点膜设置在上述第一透明胶层的表面上。
进一步地,在上述步骤S4之后,上述制造工艺还包括:S5,在上述量子点膜的裸露表面上设置第二透明胶层。
进一步地,上述步骤S1包括:将上述量子点膜切分为多个量子点子膜;上述步骤S4包括:将各上述量子点子膜设置在上述第一透明胶层的远离上述LED芯片的表面上,使得上述量子点子膜在第一平面上的投影一一对应覆盖上述LED芯片在上述第一平面上的投影,上述第一平面为与上述第一透明胶层的厚度方向垂直的平面,优选各上述量子点子膜在上述第一平面上的投影与对应覆盖的上述LED芯片在上述第一平面上的投影的大小和形状均相同。
进一步地,上述LED单元还包括基底,上述LED芯片设置在上述基底的表面上。
进一步地,对经过上述步骤S4形成的包括LED单元、量子点膜以及第一透明胶层的结构进行切分。
根据本公开的另一方面,提供了一种发光件,上述发光件包括:LED单元,包括至少一个LED芯片;第一透明胶层,设置在各上述LED芯片的表面上;量子点膜,设置在上述第一透明胶层的远离上述LED芯片的表面上。
进一步地,上述量子点膜包括多个量子点子膜,上述量子点子膜在第一平面上的投影一一对应覆盖上述LED芯片在上述第一平面上的投影,上述第一平面为与上述第一透明胶层的厚度方向垂直的平面,优选各上述量子点子膜在上述第一平面上的投影与对应覆盖的上述LED芯片在上述第一平面上的投影的大小和形状均相同。
进一步地,上述量子点膜包括:光转换层,上述光转换层包括量子点材料;导热层,设置在上述光转换层的至少一个表面上;两个水氧阻隔层,分别为第一水氧阻隔层和第二水氧阻隔层,两个水氧阻隔层分别设置在上述光转换层的两个相对的表面上。
进一步地,上述导热层的材料包括导热材料和粘结剂,优选上述导热材料包括导热金属、玻璃粉、陶瓷粉、石墨和碳粉中的至少一种,进一步优选上述导热材料包括纳米铜和/或纳米银丝。
进一步地,上述导热材料包括纳米银丝,上述纳米银丝的长度在10~500μm之间,直径在30nm~20μm之间。
进一步地,上述水氧阻隔层包括依次叠置设置的阻水层和阻氧层,上述阻水层的材料包括环氧树脂、聚偏二氯乙烯、聚偏氟乙烯与纳米级的ZnO颗粒中的至少一种,上述阻氧层的材料包括聚乙烯醇、乙烯-乙烯醇共聚物与乙烯-醋酸乙烯共聚物中的至少一种,其中,上述阻氧层设置于靠近上述光转换层的一侧。
进一步地,上述发光件还包括:第二透明胶层,设置在上述量子点膜的远离上述第一透明胶层的表面。
根据本公开的另一方面,提供了一种光电装置,该光电装置包括上述任一种发光件。
应用本公开的技术方案,先制作好量子点膜,而不是采用注入量子点胶水固化,该工艺得到的发光件结构中的量子点材料分布较均匀,进而发光件发光较均匀。
附图说明
构成本公开的一部分的说明书附图用来提供对本公开的进一步理解,本公开的示意性实施例及其说明用于解释本公开,并不构成对本公开的不当限定。在附图中:
图1示出了根据本公开的一种发光件示意图;
图2示出了本公开的另一种发光件示意图;
图3示出了本公开的一种量子点膜的结构示意图;以及
图4示出了本公开实施例的结构示意图。
其中,上述附图包括以下附图标记:
10、基底;20、LED芯片;30、第一透明胶层;40、量子点膜;400、量子点子膜;50、第二透明胶层;41、光转换层;42、导热层;43、水氧阻隔层。
具体实施方式
应该指出,以下详细说明都是例示性的,旨在对本公开提供进一步的说明。除非另有指明,本文使用的所有技术和科学术语具有与本公开所属技术领域的普通技术人员通常理解的相同含义。
需要注意的是,这里所使用的术语仅是为了描述具体实施方式,而非意图限制根据本公开的示例性实施方式。如在这里所使用的,除非上下文另外明确指出,否则单数形式也意图包括复数形式,此外,还应当理解的是,当在本说明书中使用术语“包含”和/或“包括”时,其指明存在特征、步骤、操作、器件、组件和/或它们的组合。
应该理解的是,当元件(诸如层、膜、区域、或衬底)描述为在另一元件“上”时,该元件可直接在该另一元件上,或者也可存在中间元件。而且,在说明书以及权利要求书中,当描述有元件“连接”至另一元件时,该元件可“直接连接”至该另一元件,或者通过第三 元件“连接”至该另一元件。
正如背景技术所介绍的,现有技术中的量子点材料的封装工艺难以使得量子点材料分布均匀,为了解决如上的问题,本公开提出了一种发光件的制造工艺与发光件。
本公开的一种典型的实施方式中,提供了一种发光件的制造工艺,该发光件的制造工艺包括:步骤S1,制作量子点膜40;步骤S2,提供LED单元,上述LED单元包括至少一个LED芯片20;步骤S3,在各上述LED芯片20的裸露表面上设置第一透明胶层30,各上述LED芯片20包括至少一个LED芯片20;步骤S4,将上述量子点膜40设置在上述第一透明胶层30的远离上述LED芯片20的表面上。
上述的发光件的制造工艺,先制作好量子点膜,这样得到的发光件的量子点材料分布较均匀,进而在后续的工艺中能继续保持量子点材料的分布均匀性,从而发光件发光较均匀。且先形成量子点膜,在发光件后续的制造工艺工程中该量子点膜也可以起到保护其中的量子点。
本公开在一些实施例中,上述步骤S1制作上述量子点膜40的过程包括:步骤S11,提供基材层;步骤S12,在上述基材层的表面上设置第一水氧阻隔层;步骤S13,在上述第一水氧阻隔层的远离上述基材层的表面上设置光转换层,上述光转换层包括量子点材料;步骤S14,在上述光转换层的远离上述基材层的表面上设置第二水氧阻隔层。
在一些实施例中,在上述步骤S13之后和/或在上述步骤S11与上述步骤S13之间,上述步骤S1还包括:在上述光转换层的至少一个表面上设置导热层。具体地,该导热层可以为一个,也可以为两个,两个导热层可以分别设置在光转换层的两个表面上,当然,这里的设置在表面上并不一定是与光转换层接触设置的。
在一些实施例中,当包括两个导热层时,一个水氧阻隔层43(第一水氧阻隔层)可以设置在基材层和导热层42之间,也可以设置在导热层42和光转换层41之间,另一个水氧阻隔层43(第二水氧阻隔层)可以设置在导热层42和光转换层41之间,也可以设置在导热层42的远离光转换层41的一侧,如图1和图3示出了部分结构。
导热层42可以将LED单元发出的热量更快地导出,同时,结合水氧阻隔层,可以更好地保证制作的发光件的性能稳定性以及具有较长的寿命。需要说明的是,相邻的导热层和水氧阻隔层的顺序可以调换。
在一些实施例中,上述基材层为可剥离的基材层。在一些实施例中,可剥离的基材层选自UV膜、红膜或者离型膜,UV膜在UV光照射条件下可剥离,红膜在加热条件下可剥离。在一些实施例中,可剥离的基材层可以设置在光转换层的两侧,可剥离的基材层可用于保护量子点膜的外观。
在一些实施例中,包括两个可剥离的基材层的方案的制作过程包括:将量子点分散在胶水中得到量子点胶水,将量子点胶水设置在可剥离的基材层上形成量子点胶水层,在量子点胶水层上设置另一基材层,然后固化。
在一些实施例中,在上述步骤S14后,上述步骤S1还包括:对上述基材层进行剥离。剥离可剥离的基材层的目的是降低量子点膜的厚度。在电子产品越来越薄的发展趋势下,发光件的整体厚度也需要降低,而量子点膜厚度的降低同时需要考虑到量子点膜的稳定性,因此降低量子点膜厚是一件非常困难的事情。例如采用传统的PET做基材层,即使PET的厚度可以降低,但是用超薄的PET作基材时,挺度不够,容易导致制作的量子点膜厚度均一性差,影响均匀发光。而可剥离基材层的应用,同时结合提高了量子点膜的稳定性,和可以实现超薄量子点膜的优点。
在一些实施例中,光转换层中的量子点材料包括CdSe核以及由内到外依次包覆于CdSe核外的Cd xZn (1-x)Se壳层、ZnSe zS (1-z)壳层、Cd yZn (1-y)S壳层、ZnS壳层,其中0<x<1,0<y<1,0<z≤1。该核壳量子点的能级结构层层递进,各层之间的晶格不匹配度小,其合金壳层成分均一,尺寸形貌单分散性好,荧光半峰宽窄,荧光量子产率高,稳定性高,整个合成过程简单,影响因素少,重复性好。该核壳量子点的制备包括以下步骤:S1,提供CdSe核量子点;S2,将上述CdSe核量子点加入第一锌前体溶液中,然后加入第一镉前体与第一硒前体的混合溶液,从而在上述CdSe核量子点外包覆Cd xZn (1-x)Se壳层,0<x<1;S3,向上述步骤S2反应后的溶液中再加入第二硒前体,从而在上述Cd xZn (1-x)Se壳层外包覆ZnSe壳层,提纯得到核壳量子点中间产物;或者,向上述步骤S2反应后的溶液中再加入第二硒前体与第一硫前体的混合溶液(或不混合同时加入第二硒前体、第一硫前体),从而在上述Cd xZn (1-x)Se壳层外包覆ZnSe zS (1-z)壳层,0<z<1,提纯得到核壳量子点中间产物;或者,向上述步骤S2反应后的溶液中依次加入第二硒前体、第一硫前体,从而在上述Cd xZn (1-x)Se壳层外依次包覆ZnSe壳层、ZnSe pS (1-p)壳层,0<p<1,提纯得到核壳量子点中间产物;S4,将提纯的上述核壳量子点中间产物加入第二锌前体溶液中,然后加入第二镉前体与第二硫前体的混合溶液中,从而在上述核壳量子点中间产物外包覆Cd yZn (1-y)S壳层,0<y<1;S5,向上述步骤S4反应后的溶液中再加入第三硫前体,从而在上述Cd yZn (1-y)S壳层外包覆ZnS壳层。利用该结构的量子点可以提高量子点膜的稳定性。
在另一些实施例中,在该核壳量子点的制备方法中,第一镉前体与第一硒前体的混合溶液以滴加的方式加入溶液中,第二镉前体与第二硫前体的混合溶液以滴加的方式加入溶液中。滴加的方式可以提高量子点的尺寸形貌单分散和荧光量子产率。
在一些实施例中,当ZnSe zS (1-z)壳层中的z=1时,ZnSe zS (1-z)壳层与Cd yZn (1-y)S壳层之间还包括ZnSe pS (1-p)壳层,其中0<p<1。
在一些实施例中,制备得到的光转换层含有0.5~6质量份的红色量子点、0.8~9质量份的绿色量子点、0.1-8质量份扩散粒子和77-98.6质量份的高分子树脂;红色量子点的波长范围615-640nm之间,半峰宽小于40nm;绿色量子点的波长范围515-540nm之间,半峰宽小于40nm;扩散粒子可以为粒径在200nm-400nm的无机物粒子和/或粒径在1-5μm的聚合物粒子,扩散粒子选自氧化钛、氧化锆、氧化硅、氧化铝、有机硅胶粒子、PS、PC和PMMA粒子中的一种或多种。
在一些实施例中,上述的导热层的材料包括导热材料和粘结剂,这样可以使得导热层直接粘结在光转换层上。一般地,导热材料的导热率越高越好但又需要结合透光性。上述导热材料包括导热金属、玻璃粉、陶瓷粉、石墨和碳粉中的至少一种。在另一种实施例中,上述导热材料包括纳米铜和/或纳米银丝。这两种材料可以更好地导热和透光。
为了更好地导热且不影响量子点膜的光学性能,在一些实施例中,导热层的材料中,导热材料的重量百分比在0.01~20%之间,优选在0.1~2%之间。
本公开的再一种实施例中,上述导热材料包括上述纳米银丝,上述纳米银丝的长度在10~500μm之间,直径在30nm~20μm之间。这样可以进一步保证在不影响发光效率的前提下获得较好的导热效果。
在一些优选的实施例中,导热层中的粘结剂可见光透过率在80%以上,且具有较好的热稳定性和耐光性能。在一种具体的实施例中,上述粘结剂选自有机硅、丙烯酸酯、聚氨酯和环氧树脂。在一些优选的实施例中,上述粘结剂的折射率在1.4~1.65之间,这样可以进一步保证导热层不影响发光件的光学性能,且可以提高出光率。
在一些实施例中,上述的水氧阻隔层可以由有机材料形成,还可以由无机材料和有机材料共同形成。在一些实施例中,有机材料的水氧阻隔层可以是阻氧层和阻水层的多层结合,也可以是一层水氧阻隔层。在一些实施例中,无机材料可以选自硅氧化合物、铝氧化合物与硅氮化合物中的至少一种,这些无机材料可以采用磁控溅射、原子层沉积或化学气相沉积技术在光转换层的至少一个表面沉积。
在一些实施例中,上述水氧阻隔层仅仅由有机材料形成时,上述水氧阻隔层包括依次叠置设置的阻水层和阻氧层,上述阻水层的材料包括环氧树脂、聚偏二氯乙烯、聚偏氟乙烯与纳米级的ZnO颗粒中的至少一种,上述阻氧层的材料包括聚乙烯醇、乙烯-乙烯醇共聚物与乙烯-醋酸乙烯共聚物中的至少一种。这样的水氧阻隔层制造工艺简单,成本低,生产效率高,且不用购买昂贵的磁控溅射或者化学沉积设备。
在一些实施例中,光转换层包括量子点材料,其还可以包括荧光粉。在一些实施例中,上述光转换层可以包括红色量子点材料与绿色量子点材料,也可以包括红色量子点材料与绿色荧光材料,还可以包括红色荧光材料与绿色量子点材料,当然还可以仅仅包括红色量子点或绿色量子点。
在一些实施例中,上述的光转换层可以为一层,也可以为多层,例如两层,一层为红色光转换层,另一层为绿色光转换层,其中至少一个光转换层包括量子点。光转换层的胶水可以选择与量子点兼容的丙烯酸及丙烯酸酯类聚合物,或者其他合适的材料。
在一些实施例中,光转换层的厚度范围可以为5~50μm,优选10~30μm,量子点膜的总厚度在50~300μm之间,优选在100~200μm之间。
在一些实施例中,在各上述LED芯片20的裸露表面上设置上述第一透明胶层30的过程包括:在各上述LED芯片20的表面上设置第一透明胶水;固化上述第一透明胶水;对固化后 的上述第一透明胶水进行平坦化,形成上述第一透明胶层30。当第一透明胶层30处于固化状态时,为了更牢固地将量子点膜40粘结在第一透明胶层30的表面上,本公开的一种实施例中,通过粘结剂将上述量子点膜40设置在上述第一透明胶层30的表面上。
在一些实施例中,上述第一透明胶层中含有导热材料,从而提高发光件的导热能力。
在一些实施例中,本公开的量子点膜40可以为一整层,如图1所示,覆盖一个LED芯片20,在另一些实施例中,也可以为多个间隔的量子点子膜400,如图2所示,每个量子点子膜400对应覆盖一个LED芯片20。
上述的“覆盖”是指量子点膜或者量子点子膜在第一平面上的投影能覆盖上述LED芯片在第一平面上的投影。
相比于单一量子点膜40设置于多个LED芯片上的实施例,为了提高量子点膜40的利用率,减少光损,在一些优选的实施例中,上述步骤S1包括:将上述量子点膜40切分为多个量子点子膜400;上述步骤S4包括:将各上述量子点子膜400设置在上述第一透明胶层30的远离上述LED芯片20的表面上,使得上述量子点子膜400在第一平面上的投影一一对应覆盖上述LED芯片20在上述第一平面上的投影,上述第一平面为与上述第一透明胶层30的厚度方向垂直的平面。
在一些实施例中,量子点子膜可以通过吸附的方式被转移到第一透明胶层上并对应各个LED。
在一种具体的实施例中,各上述量子点子膜400在上述第一平面上的投影与对应覆盖的上述LED芯片20在上述第一平面上的投影的大小和形状均相同,如图2所示,即量子点子膜的投影和对应LED芯片的投影的大小和形状相同,这样能够更好地保证量子点子膜对对应的LED芯片的覆盖。
本公开的另一种实施例中,步骤S3中的第一透明胶层为未固化状态,在步骤S4中:将量子点膜放置在第一透明胶层的远离各LED芯片的表面上后,对第一透明胶层进行固化,从而实现量子点膜和第一透明胶层的粘结,优选第一透明胶层靠近量子点膜的表面为平面,从而更好地实现出光均匀。
为了更好地保护量子点膜,本公开的一种实施例中,将上述量子点膜设置在上述第一透明胶层的远离各上述LED芯片的表面上后,上述制造工艺还包括:在上述量子点膜40的裸露表面上设置第二透明胶层50,在一个实施例中,形成图2所示的结构。
在一些实施例中,上述第二透明胶层50的远离上述量子点膜40的表面为平面或凸面。当然,第二透明胶层50的远离量子点膜40的表面并不仅限于是平面或凸面,根据具体情况,本领域技术人员还可以将其设置为其他的凹凸不平的表面以提高出光率。
在一些实施例中,在上述量子点膜40的上方设置透镜,从而提高出光率。
为了满足形成的发光件满足轻薄化的需求,本公开的一些实施例中,上述第一透明胶层或上述第二透明胶层的厚度在5~100μm之间,或者上述第一透明胶层和上述第二透明胶层的总厚度在5~100μm之间。
在一些实施例中,本公开中的第一透明胶层和第二透明胶层的材料可以独立地选自改性有机硅、丙烯酸、聚乙烯醇和环氧树脂中的至少一种,二者可以相同也可以不同。当然,本公开中的第一透明胶层的材料和第二透明胶层的材料可以是其他的材料,例如水氧阻隔性高的高分子或者耐高温的高分子等。上述“透明”指的是胶层能够透光。根据不同的性能需求,透明胶层中可以包含散射粒子等非透光性物质。
在一些实施例中,制备第一透明胶层和/或第二透明胶层的原料中包括高导热材料。
本公开的LED单元可以包括基底,例如PCB基板,也可以不包括PCB基板,本领域技术人员可以根据实际情况选择在LED单元中设置基底或者不设置基底,当设置基底时,LED芯片设置在基底的表面上。
本公开的又一种实施例中,不对量子点膜进行切分,而是对经过上述步骤S4形成的包括LED单元、量子点膜以及第一透明胶层的结构进行切分。对形成小型发光件来说,该工艺非常简单,省去了将大量子点膜切成小量子点膜,然后对应LED芯片进行贴附的步骤,将其和LED单元同时切分,提高了生产效率。
在一些实施例中,LED单元包括LED晶圆,制作的量子点膜的大小和形状和LED晶圆的大小和形状相同或近似。切分出来的发光件的大小可以根据具体需求切成各种大小。
本公开的另一种典型的实施方式中,提供了一种发光件,如图1所示,上述发光件结构包括LED单元、第一透明胶层30和量子点膜40,LED单元包括至少一个LED芯片,上述LED单元包括至少一个LED芯片20;第一透明胶层30设置在各上述LED芯片的表面上;量子点膜40设置在上述第一透明胶层30的远离上述LED芯片的表面上。
图1示出的发光件中还包括基底10,至少一个LED芯片设置在上述基底10表面上。
在一些实施例中,上述发光件中,通过第一透明胶层将量子点膜固定在LED芯片上方,第一透明胶层具有一定粘结力,量子点膜可以在形成之后再通过第一透明胶层设置在LED芯片的上方,避免了现有技术中直接将量子点材料分多次注入到LED芯片上固化导致的量子点分布不均的问题,该量子点膜中的量子点材料分布较均匀,进而使得发光件的发光较均匀。
在一些实施例中,量子点膜的两个正表面均为平面,平整地设置在第一透明胶层上。
在一些实施例中,本公开量子点膜可以为一整层,且同时覆盖一个LED芯片或多个LED芯片,也可以为多个间隔的量子点子膜,每个量子点子膜对应覆盖一个LED芯片。
为了提高量子点膜的利用率,减少光损,在本公开一些实施例中,上述量子点膜40包括多个量子点子膜400,如图2所示,上述量子点子膜400在第一平面上的投影一一对应覆盖上 述LED芯片在上述第一平面上的投影,上述第一平面为与上述第一透明胶层的厚度方向垂直的平面。
本公开的另一种实施例中,如图1和图3所示,上述量子点膜40包括光转换层41、导热层42和两个水氧阻隔层43,上述光转换层41包括量子点材料;导热层42设置在上述光转换层41的至少一个表面上;两个水氧阻隔层43,分别为第一水氧阻隔层和第二水氧阻隔层,两个水氧阻隔层分别设置在上述光转换层的两个相对的表面上。导热层可以将LED芯片发出的热量更快地导出,更好地保证制作得到的发光结构的性能稳定性以及具有较长的寿命。水氧阻隔层可以阻挡水汽和氧气入侵至光转换层,保证了光转换层的性能的稳定且具有较长的寿命。
上述的导热层的材料包括导热材料和粘结剂,这样可以使得导热层直接粘结在光转换层上,并且保证了形成的发光件的厚度较小,满足了轻量化结构的需求。
上述的导热材料可以为现有技术中任何一种可以导热的材料,本领域技术人员可以根据实际情况选择合适的导热材料形成本公开的导热层。
为了使得导热层具有更好的导热效果,本公开的一种实施例中,上述导热材料包括导热金属、玻璃粉、陶瓷粉、石墨和碳粉中的至少一种。
本公开在一些实施例中,上述导热材料包括纳米铜和/或纳米银丝。这两种材料可以更好地导热。
在本公开一些实施例中,上述导热材料包括上述纳米银丝,上述纳米银丝的长度在10~500μm之间,直径在30nm~20μm之间。这样可以进一步保证在不影响发光效率的前提下达到较好的导热效果。
在一些实施例中,上述的水氧阻隔层可以由有机材料形成,还可以由无机材料和有机材料共同形成。无机材料可以选自硅氧化合物、铝氧化合物与硅氮化合物中的至少一种,这些无机材料可以采用磁控溅射、原子层沉积或化学气相沉积技术在光转换层的至少一个表面沉积。
本公开在另一些实施例中,上述水氧阻隔层仅仅由有机材料形成时,上述水氧阻隔层包括依次叠置设置的阻水层和阻氧层,上述阻水层的材料包括环氧树脂、聚偏二氯乙烯、聚偏氟乙烯与纳米级的ZnO颗粒中的至少一种,上述阻氧层的材料包括聚乙烯醇、乙烯-乙烯醇共聚物与乙烯-醋酸乙烯共聚物中的至少一种,阻氧层设置于靠近光转换层的一侧。这样的水氧阻隔层制造成本低,生产效率高,且不用买昂贵的磁控溅射或者化学沉积设备。
在一些实施例中,本公开光转换层包括量子点材料,其还可以包括荧光粉,具体地,上述光转换层可以包括红色量子点材料与绿色量子点材料,也可以包括红色量子点材料与绿色荧光材料,还可以包括红色荧光材料与绿色量子点材料,当然还可以仅仅包括红色量子点或绿色量子点。
在一些实施例中,上述的光转换层可以为一层,也可以为多层,例如两层,如图4所示,一层为红色光转换层,另一层为绿色光转换层,其中的至少一个光转换层包括量子点。
为了更好地保护量子点膜,本公开的一种实施例中,如图2所示,上述发光件还包括第二透明胶层50,第二透明胶层50设置在上述量子点膜40的远离上述第一透明胶层30的表面,优选上述第二透明胶层50的远离上述量子点膜40的表面为平面或凸面。
需要说明的是,本公开中的LED用的基底可以为简单的平板结构,也可以为图1和图2示出的具有安装凹槽的结构,本领域技术人员可以根据实际情况设置合适结构的基底用来放置LED芯片。LED单元的基底可以为发光件的组成部分或者制造工艺中的临时使用的不构成发光件组成部分的基底。LED芯片之间的电路可以串联或者独立控制。
本公开在一些具体实施例中,LED芯片为蓝光LED芯片。当然,本公开中的LED芯片并不限于蓝光LED芯片,还可以是发出其它光的LED芯片。
需要说明的是,本公开发光件中的量子点膜可以是一个也可以是多个,可以是一种或多种,根据实际情况进行设置,当光转换层只包括一种颜色对应的光转化材料时,可以设置多个量子点膜,每个量子点膜中的光转换层包括不同颜色对应的量子点材料,以发出白光。例如,当LED芯片为蓝光LED芯片时,可以包括两个量子点膜,一个为绿光量子点膜,另一个为红光量子点膜,在切分为量子点子膜时,对两个量子点膜均进行切分。
根据本公开的另一方面,提供了一种光电装置,该光电装置包括上述任一种发光件。该光电装置可以是照明装置、显示装置、检测装置等。
为了使得本领域技术人员能够更加清楚地了解本公开的技术方案,以下将结合具体的实施例来说明。
实施例中的红色量子点材料和绿色量子点材料的制备采用下面的方法。
红色量子点材料的制备:
第一激子吸收峰为570nm球形CdSe量子点(3.7nm)的合成:将CdO(0.0256g,0.2mmol)、HSt(0.1420g,0.5mmol)和ODE(4mL)放入25mL三颈瓶中,搅拌通气(氩气)10分钟后,升温至280℃,得到澄清溶液,降温至250℃;将1mL浓度为0.1mmol/mL的硒粉悬浊液快速注入到三颈瓶中,将反应温度控制在250℃;反应7分钟后,每隔2~3分钟,快速注入0.05mL、0.1mmol/mL的硒粉悬浊液,直到量子点的尺寸达到目标尺寸,立即停止加热;在反应过程中,取一定量的反应溶液注入到含有1~2mL甲苯的石英比色皿中,进行紫外可见吸收光谱和荧光光谱的测量。
CdSe/CdZnSe/ZnSe/CdZnS/ZnS核壳量子点的合成(630nm):
取4mmol醋酸锌,0.15mmol醋酸镉、4.4g油酸,10mL ODE于100mL三颈烧瓶中,200℃下,通入惰性气体排气30分钟,注入提纯好的第一激子吸收峰吸光度为50的CdSe量子点溶液,升高温度至310℃;注入1mL、0.5mmol/mL Se-TOP溶液,反应10分钟,随后注 入0.1mL、2mmol/mL Se-TBP溶液,反应10分钟停止反应,得到CdSe/CdZnSe/ZnSe核壳量子点;将至室温,提纯并溶于1mL ODE中。
称取碱式碳酸锌(0.66g,1.2mmol),2.8g油酸,5g ODE于100mL三颈烧瓶中,用惰性气体排气10分钟;升高温度至280℃,得到澄清溶液;注入提纯好的CdSe/CdZnSe/ZnSe核壳量子点,升高温度至300℃,以5mL/h的速度滴加2mL 0.5mmol/mL的S-TBP与0.05mL、0.2mmol/mL的油酸镉的混合溶液,滴加完后,继续以同样的速度滴加2mL、0.5mmol/mL的S-TBP溶液,滴加结束后,停止反应。
绿色量子点材料的制备:
第一激子吸收峰为480nm球形CdSe量子点(3.7nm)的合成:将CdO(0.0128g,0.1mmol)、HSt(0.1420g,0.5mmol)和ODE(4mL)放入25mL三颈瓶中,搅拌通气(氩气)10分钟后,升温至280℃,得到澄清溶液,降温至250℃;将1mL浓度为0.05mmol/mL的硒粉悬浊液快速注入到三颈瓶中,将反应温度控制在220℃;反应5分钟后,立即停止加热;在反应过程中,取一定量的反应溶液注入到含有1~2mL甲苯的石英比色皿中,进行紫外可见吸收光谱和荧光光谱的测量。
CdSe/CdZnSe/ZnSe/CdZnS/ZnS核壳量子点的合成(530nm):
取4mmol醋酸锌,0.05mmol醋酸镉、4.4g油酸,10mL ODE于100mL三颈烧瓶中,200℃下,通入惰性气体排气30分钟,注入提纯好的第一激子吸收峰吸光度为50的CdSe量子点溶液,升高温度至300℃;注入1mL、0.5mmol/mL Se-TOP溶液,反应10分钟,随后注入0.2mL、2mmol/mL Se-TBP溶液,反应10分钟停止反应,得到CdSe/CdZnSe/ZnSe核壳量子点;将至室温,提纯并溶于1mL ODE中。
称取碱式碳酸锌(0.66g,1.2mmol),2.8g油酸,5g ODE于100mL三颈烧瓶中,用惰性气体排气10分钟;升高温度至280℃,得到澄清溶液;注入提纯好的CdSe/CdZnSe/ZnSe核壳量子点,升高温度至300℃,以5mL/h的速度滴加2mL、0.5mmol/mL的S-TBP与0.05mL、0.2mmol/mL的油酸镉的混合溶液,滴加完后,继续以同样的速度滴加2mL、0.5mmol/mL的S-TBP溶液,滴加结束后,停止反应。
实施例1
发光件的制作过程包括:
第一步,制作量子点膜:
在第一离型膜上按顺序涂覆第一水氧阻隔层胶水,第一导热层胶水,光转换层胶水,第二导热层胶水,第二水氧阻隔层胶水,第二离型膜,然后固化。
该光转换层包括红色量子点、绿色量子点与丙烯酸酯树脂的混合层,红色量子点为发光波长为630nm的CdS/ZnSe核壳量子点,绿色量子点为发光波长为530nm CdS/ZnSe核壳量子点,该光转换层的厚度为20μm。
各第一导热层的厚度为20μm,导热层包括纳米银丝和丙烯酸单体,纳米银丝的长度为200μm,直径为10μm,导热层的材料中,纳米银丝的重量百分比为10%。
在各导热层的远离量子点的表面上分别设置水氧阻隔层,各水氧阻隔层的厚度为20μm,水氧阻隔层包括依次叠置的阻水层和阻氧层,阻水层与导热层接触设置,阻水层为聚偏二氯乙烯涂层,上述阻氧层的材料包括聚乙烯醇涂层。
将量子点膜的两个离型膜剥离,并用切割机切分为多个量子点子膜,量子点子膜的大小和LED芯片一样大,备用。
第二步,提供LED单元:
采用精密点胶机点胶在设置好电路的基底上安装三个间隔设置的LED芯片,LED芯片为蓝光LED芯片。
第三步,在各上述LED芯片的裸露表面上设置第一透明胶层的胶水,胶水为有机硅胶。
第四步,将上述量子点子膜一一对应地设置在上述第一透明胶层的胶水的远离各上述LED芯片的表面上,固化,实现第一透明胶层和量子点子膜的粘结。
第五步,在上述量子点子膜的裸露表面上设置第二透明胶层,第二透明胶层的厚度为50μm,第二透明胶层的材料为改性有机硅。
得到的发光件示意图如图4。
实施例2
发光件的制作过程包括:
第一步,制作量子点膜:
在第一离型膜上按顺序涂覆第一水氧阻隔层胶水,第一导热层胶水,光转换层胶水,第二导热层胶水,第二水氧阻隔层胶水,第二离型膜,然后固化。
该光转换层包括红色量子点、绿色量子点与丙烯酸酯树脂的混合层,红色量子点为发光波长为630nm的CdS/ZnSe核壳量子点,绿色量子点为发光波长为530nm CdS/ZnSe核壳量子点,该光转换层的厚度为20μm。
各第一导热层的厚度为20μm,导热层包括纳米银丝和丙烯酸,纳米银丝的长度为200μm,直径为10μm,导热层的材料中,纳米银丝的重量百分比为10%。
在各导热层的远离量子点的表面上分别设置水氧阻隔层,各水氧阻隔层的厚度为20μm,水氧阻隔层包括依次叠置的阻水层和阻氧层,阻水层与导热层接触设置,阻水层为聚偏二氯乙烯成涂层,上述阻氧层的材料包括聚乙烯醇涂层。
将量子点膜的两个离型膜剥离,量子点膜的大小与待加工的LED晶圆一样大,备用。
第二步,提供LED单元:
准备好一片LED晶圆,材料及结构同实施例1的LED芯片。
第三步,在LED晶圆的裸露表面上涂布第一透明胶层的胶水,胶水为有机硅胶。
第四步,将上述量子点膜对应地设置在上述第一透明胶层的胶水的远离LED晶圆的表面上,固化,实现第一透明胶层和量子点膜的粘结,得到量子点膜LED发光体。
第五步,用晶圆激光切割机对量子点膜LED发光体进行切割得到小发光件。
第六步,将小发光件放置在设置好电路基底上。
第七步,在小发光件的裸露表面上设置第二透明胶层,第二透明胶层的厚度为50μm,第二透明胶层的材料为改性有机硅。
得到的发光件示意图如图4。
实施例3
与实施例1的区别在于用了上述方法制备的发射峰峰值波长为630nm和530nm的CdSe/CdZnSe/ZnSe/CdZnS/ZnS核壳量子点。
对比例1
形成量子点胶水,量子点胶水包括红色量子点、绿色量子点与丙烯酸酯树脂的混合物(量子点胶水配方同实施例1),分多次将量子点胶水直接注入到LED芯片上固化制造,每次注入到LED芯片上后,都进行固化,下次注入的量子点胶水实际上设置在上次固化后的量子点材料层上。
采用50℃烘箱中点亮LED芯片,监测光学性能变化的方法测试实施例和对比例发光件的可靠性,以表征发光件的稳定性;采用平行样品积分球方法测试实施例和对比例的发光件的色度坐标值,以表征发光件发光均匀性。X1、X2、X3代表的是3个量子点LED发光件的X坐标,Y1、Y2、Y3代表的是3个量子点LED发光件的Y坐标。发光件是指同一批次制作的3颗带量子点膜的LED芯片。
具体的测试结果见表1。
表1
Figure PCTCN2019107068-appb-000001
从表1可以看出实施例的三颗小发光件的XY色坐标的偏差较小,而对比例1的XY色坐标偏差较大;且实施例的50℃烘箱点亮500h后发光效率显著高于对比例,其中,实施例3用了稳定性更好的量子点,因而发光效率最高。
从以上的描述中,可以看出,本公开上述的实施例实现了如下技术效果:
1)、本公开的制造工艺,先制作好量子点膜,因为量子点膜中的量子点材料分布可以较均匀,因而该工艺得到的发光件的量子点材料分布较均匀,且提高了LED的发光均匀性。
2)、通过引入可剥离基材层,实现发光件的薄层化。
3)、引入高稳定性量子点,也有利于实现发光件的薄层化。
4)、将量子点膜和LED晶圆同时切割,可以提高生产效率。
以上仅为本公开的优选实施例而已,并不用于限制本公开,对于本领域的技术人员来说,本公开可以有各种更改和变化。凡在本公开的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本公开的保护范围之内。

Claims (18)

  1. 一种发光件的制造工艺,其特征在于,所述制造工艺包括:
    步骤S1,制作量子点膜;
    步骤S2,提供LED单元,所述LED单元包至少一个LED芯片;
    步骤S3,在各所述LED芯片的裸露表面上设置第一透明胶层;
    步骤S4,将所述量子点膜设置在所述第一透明胶层的远离所述LED芯片的表面上。
  2. 根据权利要求1所述的制造工艺,其特征在于,所述步骤S1包括:
    步骤S11,提供基材层;
    步骤S12,在所述基材层的表面上设置第一水氧阻隔层;
    步骤S13,在所述第一水氧阻隔层的远离所述基材层的表面上设置光转换层,所述光转换层包括量子点材料;
    步骤S14,在所述光转换层的远离所述基材层的表面上设置第二水氧阻隔层;
    优选地,在所述步骤S13之后和/或在所述步骤S11与所述步骤S13之间,所述步骤S1还包括:在所述光转换层的至少一个表面上设置导热层。
  3. 根据权利要求2所述的制造工艺,其特征在于,所述基材层为可剥离的基材层。
  4. 根据权利要求3所述的制造工艺,其特征在于,在所述步骤S14后,所述步骤S1还包括:对所述基材层进行剥离。
  5. 根据权利要求1所述的制造工艺,其特征在于,所述第一透明胶层为未固化状态,在所述步骤S4之后,所述制造工艺还包括:对所述第一透明胶层进行固化,从而实现所述量子点膜和所述第一透明胶层的粘结,优选所述第一透明胶层靠近所述量子点膜的表面为平面。
  6. 根据权利要求1所述的制造工艺,其特征在于,所述步骤S3包括:
    在各所述LED芯片的裸露表面上设置第一透明胶水;
    对所述第一透明胶水进行固化,形成第一透明胶层,
    优选地,通过粘结剂将所述量子点膜设置在所述第一透明胶层的表面上。
  7. 根据权利要求1所述的制造工艺,其特征在于,在所述步骤S4之后,所述制造工艺还包括:
    S5,在所述量子点膜的裸露表面上设置第二透明胶层。
  8. 根据权利要求1至7中任一项所述的制造工艺,其特征在于,所述步骤S1包括:将所述量子点膜切分为多个量子点子膜;所述步骤S4包括:将各所述量子点子膜设置在所述第一透明胶层的远离所述LED芯片的表面上,使得所述量子点子膜在第一平面上的投影一一对应覆盖所述LED芯片在所述第一平面上的投影,所述第一平面为与所述第一透明胶层的厚度方向垂直的平面,
    优选各所述量子点子膜在所述第一平面上的投影与对应覆盖的所述LED芯片在所述第一平面上的投影的大小和形状均相同。
  9. 根据权利要求1至7中任一项所述的制造工艺,其特征在于,所述LED单元还包括基底,所述LED芯片设置在所述基底的表面上。
  10. 根据权利要求1至7中任一项所述的制造工艺,其特征在于,对经过所述步骤S4形成的包括LED单元、量子点膜以及第一透明胶层的结构进行切分。
  11. 一种发光件,其特征在于,所述发光件包括:
    LED单元,包括至少一个LED芯片(20);
    第一透明胶层(30),设置在各所述LED芯片的表面上;
    量子点膜(40),设置在所述第一透明胶层(30)的远离所述LED芯片的表面上。
  12. 根据权利要求11所述的发光件,其特征在于,所述量子点膜(40)包括多个量子点子膜(400),所述量子点子膜(400)在第一平面上的投影一一对应覆盖所述LED芯片在所述第一平面上的投影,所述第一平面为与所述第一透明胶层的厚度方向垂直的平面,
    优选各所述量子点子膜在所述第一平面上的投影与对应覆盖的所述LED芯片在所述第一平面上的投影的大小和形状均相同。
  13. 根据权利要求11所述的发光件,其特征在于,所述量子点膜(40)包括:
    光转换层(41),所述光转换层(41)包括量子点材料;
    导热层(42),设置在所述光转换层(41)的至少一个表面上;
    两个水氧阻隔层(43),分别为第一水氧阻隔层和第二水氧阻隔层,两个水氧阻隔层分别设置在所述光转换层的两个相对的表面上。
  14. 根据权利要求13所述的发光件,其特征在于,所述导热层(42)的材料包括导热材料和粘结剂,优选所述导热材料包括导热金属、玻璃粉、陶瓷粉、石墨和碳粉中的至少一种,进一步优选所述导热材料包括纳米铜和/或纳米银丝。
  15. 根据权利要求14所述的发光件,其特征在于,所述导热材料包括纳米银丝,所述纳米银丝的长度在10~500μm之间,直径在30nm~20μm之间。
  16. 根据权利要求13所述的发光件,其特征在于,所述水氧阻隔层(43)包括依次叠置设置的阻水层和阻氧层,所述阻水层的材料包括环氧树脂、聚偏二氯乙烯、聚偏氟乙烯与纳米级的ZnO颗粒中的至少一种,所述阻氧层的材料包括聚乙烯醇、乙烯-乙烯醇共聚物与乙烯-醋酸乙烯共聚物中的至少一种,其中,所述阻氧层设置于靠近所述光转换层(41)的一侧。
  17. 根据权利要求11所述的发光件,其特征在于,所述发光件还包括:
    第二透明胶层(50),设置在所述量子点膜(40)的远离所述第一透明胶层(30)的表面。
  18. 一种光电装置,其特征在于,所述光电装置包括权利要求11至17中任一种发光件。
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