WO2020062730A1 - 有机发光显示设备及其制备方法、制备支撑柱的掩膜板 - Google Patents

有机发光显示设备及其制备方法、制备支撑柱的掩膜板 Download PDF

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WO2020062730A1
WO2020062730A1 PCT/CN2019/072146 CN2019072146W WO2020062730A1 WO 2020062730 A1 WO2020062730 A1 WO 2020062730A1 CN 2019072146 W CN2019072146 W CN 2019072146W WO 2020062730 A1 WO2020062730 A1 WO 2020062730A1
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Prior art keywords
pixel
area
organic light
pixel region
length
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PCT/CN2019/072146
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English (en)
French (fr)
Inventor
段梦丛
杨少蕾
彭兆基
敖伟
张金方
王晴晴
王徐亮
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昆山国显光电有限公司
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Publication of WO2020062730A1 publication Critical patent/WO2020062730A1/zh
Priority to US16/874,678 priority Critical patent/US11239295B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes

Definitions

  • the present application relates to the technical field of organic light-emitting display devices, and in particular, to an organic light-emitting display device, a preparation method, and a mask plate used for preparing a support post during the preparation process.
  • OLED Organic Light Emitting Diode
  • OLEDs include passive-matrix OLEDs, active-matrix OLEDs, transparent OLEDs, top-emitting OLEDs, foldable OLEDs, and white-light OLEDs.
  • AMOLED active matrix OLED
  • the backplane segment process is used to form a TFT backplane, which provides lighting signals and stable power input for light emitting devices.
  • the front panel process uses a high-precision metal mask (FMM) to deposit organic light-emitting materials and cathodes on the backplane, combines with the driving circuit to form light-emitting devices, and then encapsulates them in an oxygen-free environment to protect them. .
  • FMM high-precision metal mask
  • the alignment accuracy of the vapor deposition and the air-tightness of the package are the challenges of the front plate process.
  • the module segment process cuts the packaged panel into the actual product size, and then carries out various processes such as polarizer attachment, control circuit and chip bonding, and performs aging tests and product packaging, and finally displays the product in the customer's hands.
  • the purpose of this application is mainly to take some measures to reduce the damage of the supporting pillars, and formulate an organic light-emitting display device capable of reducing the damage of the supporting pillars and having a good packaging effect, a method for preparing the organic light-emitting display device, and a mask for preparing the supporting pillars. board.
  • this application provides an organic light-emitting display device, including: a substrate having a pixel-defining layer on the substrate, the pixel-defining layer defining a plurality of pixel areas, and the plurality of pixel areas including at least a plurality of A pixel region, a plurality of second pixel regions, and a plurality of third pixel regions; a plurality of support pillars located on the pixel defining layer, and the support pillars are located at the intersections of the first pixel region, the second pixel region, and the third pixel region And one square millimeter of the substrate has 25 to 350 of the supporting pillars; an organic light emitting diode located on the substrate, the organic light emitting diode includes an anode, an organic light emitting layer, and a cathode.
  • the support pillar has a lower bottom facing the substrate, an upper top disposed opposite to the lower bottom, and a side surface connecting the upper top and the lower bottom; the area of the lower bottom is not larger than the first The area at the intersection of the pixel area, the second pixel area, and the third pixel area, and the area of the top and bottom is not greater than the area of the bottom.
  • the inclination angle between the side of the support pillar and the bottom is between 20 ° and 80 °.
  • the area at the intersection of the three pixel areas in the first pixel area, the second pixel area, and the third pixel area is larger than the area between any two adjacent pixel areas.
  • the widths of the first pixel area, the second pixel area, and the third pixel area are the same; the length of the third pixel area is greater than the length of the first pixel area, and the length of the third pixel area is greater than the second pixel area Or the length of the third pixel region is greater than the length of the first pixel region and not greater than twice the length of the first pixel region, and the length of the third pixel region is greater than the length of the second pixel region and not greater than The length of the second pixel region is twice.
  • first pixel region, the second pixel region, and the third pixel region are aligned in a width direction and are alternately arranged along one direction of the substrate, and a boundary between the first pixel region and the second pixel region of a column Is flush with the third pixel region of an adjacent column.
  • the support pillar is located at an intersection at a corner of the third pixel region.
  • a plurality of support pillars are evenly distributed at the intersections of the first pixel area, the second pixel area, and the third pixel area.
  • the substrate is a TFT substrate
  • the TFT substrate includes a substrate and a plurality of thin film transistors provided on the substrate.
  • the supporting pillar has a quadrangular pyramid shape.
  • the upper surface of the support pillar does not contact the edge of the opening of the metal mask plate forming the organic light emitting layer.
  • the present application further provides a method for preparing an organic light emitting display device, including the following steps: preparing a pixel defining layer on a substrate, the pixel defining layer defining a plurality of pixel regions, and the plurality of pixel regions including a plurality of first regions; A pixel region, a plurality of second pixel regions, and a plurality of third pixel regions; support pillars are formed at the intersections of the first pixel region, the second pixel region, and the third pixel region; and 25 to 25 mm are formed on the substrate of 1 square millimeter. 350 support pillars; an organic light emitting diode is prepared on the substrate, and the organic light emitting diode includes an anode, an organic light emitting layer, and a cathode.
  • the support pillars are prepared on several intersections evenly distributed on the substrate.
  • the preparation method of the support pillar is: using a photosensitive resin glue to make a photosensitive resin glue layer on the substrate, fixing a mask plate above the photosensitive resin glue layer, and exposing the photosensitive resin glue layer. , Development, and etching processes, the support pillars are prepared at positions corresponding to the exposure holes on the mask plate.
  • the widths of the first pixel region, the second pixel region, and the third pixel region are the same.
  • the length of the third pixel region is greater than the length of the first pixel region, and the length of the third pixel region is greater than the length of the second pixel region.
  • a pixel region, a second pixel region, and a third pixel region are aligned in a width direction and are alternately arranged along one direction of the substrate, and the boundary between the first pixel region and the second pixel region of one column is adjacent to the adjacent column.
  • the third pixel regions are flush with each other, and the support pillars are formed at the intersections at the corners of the third pixel regions.
  • the support pillar has a lower bottom facing the substrate, an upper top disposed opposite to the lower bottom, and a side surface connecting the upper top and the lower bottom; the area of the lower bottom is not larger than the first The area at the intersection of the pixel area, the second pixel area, and the third pixel area, the area of the upper top is not greater than the area of the lower bottom, and the inclination angle between the side of the support pillar and the lower bottom is between 20 ° ⁇ Between 80 °.
  • the area of the bottom is smaller than the area at the intersection of the first pixel area, the second pixel area, and the third pixel area.
  • the present application further provides a mask plate for preparing a support post, which includes a masking plate, the masking plate is defined with a plurality of pixel definition areas, and the plurality of pixel definition areas include at least a first pixel definition area. Area, a second pixel definition area, and a third pixel definition area; a plurality of through holes penetrating through the mask plate are located at the intersections of the first pixel definition area, the second pixel definition area, and the third pixel definition area, and A 1 mm square mask has 25 to 350 said through holes.
  • the widths of the first pixel definition area, the second pixel definition area, and the third pixel definition area are the same.
  • the length of the third pixel definition area is greater than the length of the first pixel definition area, and the length of the third pixel definition area is greater than the second pixel definition area.
  • the length of the pixel definition area; the first pixel definition area, the second pixel definition area, and the third pixel definition area are aligned in the width direction and alternately arranged along one direction of the substrate, and the first pixel definition area and the The boundary of the second pixel definition area is flush with the third pixel definition area of an adjacent column, and the through hole is located at the intersection of a corner of the third pixel definition area.
  • a plurality of through holes are evenly distributed at the intersections of the first pixel definition area, the second pixel definition area, and the third pixel definition area.
  • the support pillar is provided at the intersection of the first pixel region, the second pixel region, and the third pixel region, so that the support pillar has a relatively large diameter and supporting force, and can Effectively support subsequent mask plates; at the same time, the upper surface of the support pillars will not contact the edge of the opening of the high-precision metal mask plate forming the organic light-emitting layer, so that the support pillars can be prevented from being masked by subsequent mask plates Scratching, effectively avoiding black spots caused by scratches on the support post.
  • FIG. 1 is a schematic structural diagram of a part of a mask plate according to a preferred embodiment of the present application.
  • a support post (Spacer post, or SPC post for short) needs to be provided on the TFT backplane to support various mask plates used in the front plate segment process; the support post is located in the G pixel area and the B pixel area of the OLED Junction.
  • the support post is located in the G pixel area and the B pixel area of the OLED Junction.
  • the organic light-emitting display device of the present application includes a substrate having a pixel-defining layer, a support post on the pixel-defining layer, and an organic light-emitting diode (OLED) on the substrate.
  • OLED organic light-emitting diode
  • the substrate is preferably a TFT substrate, which includes a substrate, and a plurality of thin film transistors (TFT arrays) provided on the substrate.
  • TFT substrate which includes a substrate, and a plurality of thin film transistors (TFT arrays) provided on the substrate.
  • TFT arrays thin film transistors
  • the pixel defining layer defines a plurality of pixel areas, and the pixel area includes at least a plurality of first pixel areas, a plurality of second pixel areas, and a plurality of third pixel areas.
  • the first pixel area is an R (red) pixel.
  • the second pixel area is a G (green) pixel area
  • the third pixel area is a B (blue) pixel area.
  • the arrangement of a plurality of the pixel regions is not limited, and any one of the prior art may be adopted.
  • the widths of the first pixel region, the second pixel region, and the third pixel region are substantially the same.
  • the length of the third pixel region is greater than the length of the first pixel region, and the length of the third pixel region is greater than the second pixel region.
  • the first pixel region, the second pixel region, and the third pixel region are relatively aligned along the width direction thereof, and are alternately arranged along one direction of the substrate, and the arrangement of the adjacent two columns of pixel regions is out of phase; Specifically, a boundary between the first pixel region and the second pixel region of a column is flush with a third pixel region of an adjacent column, and a person skilled in the art can understand this as “the first pixel region of a column” The boundary between the second pixel region and the third pixel region of the adjacent column is approximately flush with the mid-point line in the longitudinal direction. "Therefore, the intersection of the first pixel region, the second pixel region, and the third pixel region is located at any arbitrary position. Between two adjacent columns of pixel areas.
  • the length of the third pixel region is greater than the length of the first pixel region and not greater than twice the length of the first pixel region, and the length of the third pixel region is greater than the length of the second pixel region and not greater than the first pixel region.
  • the length of the two-pixel area is twice.
  • the length of the third pixel region is substantially twice the length of the first pixel region, and the length of the third pixel region is substantially twice the length of the second pixel region.
  • the area at the intersection at the edge of the third pixel area is smaller than the area at the intersection at the corner of the third pixel area; the support pillars are preferably disposed at the intersection at the corner of the third pixel area, The supporting force is large, and the probability of abrasion with the mask in the subsequent process is less.
  • the support pillar is used to support the mask plate used in the preparation process of each film layer in the process of preparing the organic light emitting diode, and can also play a role of supporting the packaging structure in the embodiment having the packaging structure.
  • the support pillar is located at the intersection of the first pixel region, the second pixel region, and the third pixel region.
  • the intersection of the first pixel region, the second pixel region, and the third pixel region refers to a blank position between the three pixel regions, that is, the first pixel region, the first pixel region, and the third pixel region.
  • the shape and size of the two pixel areas and the third pixel area adjacent to each other are determined by the surrounding three pixel areas.
  • the area at the intersection of the three pixel areas is larger than the area between any two adjacent pixel areas, so the support column has a relatively large diameter and supporting force, and can effectively support subsequent mask plates;
  • the upper top surface of the support pillar will not contact the edge of the opening of the high-precision metal mask plate forming the organic light-emitting layer, so that the upper top surface of the support pillar can be prevented from being scratched by the subsequent mask plate. Effectively avoid the black spot phenomenon caused by the scratch of the support column.
  • the density of the support posts is designed as follows: there are 25 to 350 support posts on the substrate of 1 square millimeter.
  • the density of the support pillars is too large, which increases the probability of black spots causing wear due to the wear of the support pillars; while the density of the support pillars is too small, the support strength of the subsequent organic light emitting diode process FMM mask plate is insufficient or the support points are uneven, resulting The deflection of the FMM mask will affect the accuracy of the OLED device process section.
  • a plurality of supporting pillars are evenly distributed at the intersections of the three pixel regions, and the supporting effect is good, so that the precision of the devices in each region is consistent.
  • the support pillar has a lower bottom facing the substrate, an upper top disposed opposite to the lower bottom to support a mask plate used in an organic light emitting diode process, and a top connecting the upper top and the lower bottom.
  • the area of the lower bottom is not greater than the area at the intersection of the first pixel area, the second pixel area, and the third pixel area, and the area of the top is not greater than the area of the bottom, so that the support column It is only formed at the intersection, which will not affect the accuracy of other film layers in the subsequent organic light emitting diode process, and will also reduce the wear of the support pillar in the subsequent process.
  • the area of the lower base is smaller than the area of the intersection, and even in the manufacturing process of the support post, the support post is located in the first pixel area even if the position of the support post is misaligned due to unavoidable process deviation.
  • the intersections of the second pixel region and the third pixel region do not cross the surrounding pixel regions, thereby preventing the support pillar from being worn in subsequent processes.
  • the inclination angle (taper angle) of the side of the support column and the bottom is between 20 ° and 80 °, which can achieve better support performance and ensure the accuracy of subsequent processes.
  • the height of the support pillar is designed to be higher than the structure film layer of the organic light emitting diode, and the area of the top and bottom is determined by the area of the bottom and the angle of inclination and the height of the support pillar.
  • the supporting column has a quadrangular pyramid shape
  • the bottom of the supporting column is a square with a side length between 5 ⁇ m and 15 ⁇ m
  • the angle (taper angle) between the side and the bottom is between 20 ° and Between 80 °
  • the height is designed to be higher than the structure film layer of the organic light emitting diode.
  • the length of the top side is determined by the length of the bottom side, the taper angle, and its height.
  • the length of the top side is between 0 ⁇ m. ⁇ 10 ⁇ m.
  • the bottom is 10 ⁇ m ⁇ 10 ⁇ m
  • the taper angle is 33 °
  • the top is 5 ⁇ m ⁇ 5 ⁇ m.
  • the organic light emitting diode includes an anode, an organic light emitting layer, and a cathode.
  • a part of the anode is covered by the pixel defining layer, and another part is covered by a first pixel region, a second pixel region, and a third pixel on the pixel defining layer.
  • the area is exposed upward; the organic light-emitting layer is located on the exposed portion of the anode and is configured as an emission layer capable of emitting light of different colors such as red, green, and blue light; and the cathode is located on the organic light-emitting layer.
  • the organic light emitting display device further includes a sealing structure, and the sealing structure is disposed opposite to the TFT back plate.
  • the sealing structure is disposed opposite to the TFT back plate.
  • the TFT backplane the pixel-defining layer, the organic light-emitting diode, other structures of the sealing structure and their functions, and the positional relationship and preparation method of each structure, reference may be made to the prior art, which is not repeated here. .
  • the present application also provides a method for preparing an organic light emitting display device, including the following steps: preparing a pixel defining layer on a substrate, the pixel defining layer defining a plurality of pixel regions, and the plurality of pixel regions including at least a plurality of first pixel regions and a plurality of first pixel regions; Two pixel areas and several third pixel areas are used for demonstration.
  • the first pixel area is an R pixel area
  • the second pixel area is a G pixel area
  • the third pixel area is a B pixel area.
  • a support pillar is formed at the intersection of the pixel region and the third pixel region; an organic light emitting diode is prepared on the substrate, and the organic light emitting diode includes an anode, an organic light emitting layer, and a cathode.
  • the intersection of the first pixel region, the second pixel region, and the third pixel region refers to a blank position between the three pixel regions, that is, the first pixel region, the first pixel region, and the third pixel region.
  • the shape and size of the two pixel areas and the third pixel area adjacent to each other are determined by the surrounding three pixel areas. Therefore, the supporting pillars are formed at the intersections of the first pixel region, the second pixel region, and the third pixel region at the blank positions between the three pixel regions, and the supporting pillars have a relatively large diameter and supporting force.
  • the upper top surface of the support pillar will not contact the edge of the opening of the mask plate forming the organic light emitting layer, so that the upper pillar of the support pillar can be avoided
  • the surface is scratched by the subsequent mask plate, which effectively avoids the black spot phenomenon caused by the scratch of the support column.
  • the arrangement of a plurality of the pixel regions is not limited, and any one of the prior art may be adopted.
  • the widths of the first pixel area, the second pixel area, and the third pixel area are substantially the same.
  • the length of the third pixel area is greater than the length of the first pixel area, and the length of the third pixel area is greater than that of the second pixel area.
  • the first pixel area, the second pixel area, and the third pixel area are aligned along the width direction thereof, and are alternately arranged along one direction of the substrate, and the arrangement of the adjacent two column pixel areas is misaligned; specifically The boundary between the first pixel region and the second pixel region of a column is flush with the third pixel region of an adjacent column.
  • the boundary of the two pixel areas is approximately flush with the mid-point line of the third pixel area of the adjacent column in the longitudinal direction. "Therefore, the intersection of the first pixel area, the second pixel area, and the third pixel area is located adjacent to each other. Between two columns of pixel areas.
  • the length of the third pixel region is greater than the length of the first pixel region and not greater than twice the length of the first pixel region, and the length of the third pixel region is greater than the length of the second pixel region and not greater than the first pixel region.
  • the length of the two-pixel area is twice.
  • the length of the third pixel region is substantially twice the length of the first pixel region, and the length of the third pixel region is substantially twice the length of the second pixel region.
  • the area at the intersection at the edge of the third pixel area is smaller than the area at the intersection at the corner of the third pixel area; preferably, the support pillar is formed at the intersection at the corner of the third pixel area, The supporting force is large, and the probability of abrasion with the mask in the subsequent process is less.
  • the substrate is a TFT backplane
  • the preparation method of the TFT backplane is: preparing a plurality of thin film transistor arrays (TFT arrays) on a substrate such as glass or plastic to form a TFT backplane.
  • TFT arrays thin film transistor arrays
  • the corresponding relationship between the thin film transistor array and the pixel area is the prior art, and is not repeated here.
  • the pixel-defining layer is prepared on the TFT backplane using an existing process, and details are not described herein again.
  • the preparation method of the support pillar is specifically: using a photosensitive resin glue to make a photosensitive resin glue layer on the substrate, fixing a mask plate above the photosensitive resin glue layer, and exposing and developing the photosensitive resin glue layer. And an etching process, obtaining the support pillars at positions corresponding to the exposure holes on the mask plate.
  • the above method is used to prepare 25 to 350 support pillars on the substrate of 1 square millimeter.
  • the density of the support pillars is too large, which increases the probability of black spots causing wear due to the wear of the support pillars; while the density of the support pillars is too small, the support strength of the subsequent organic light emitting diode process FMM mask plate is insufficient or the support points are uneven, resulting The deflection of the FMM mask will affect the accuracy of the OLED device process section.
  • the support pillars are prepared at several intersections evenly distributed on the substrate, so that the plurality of support pillars formed are evenly distributed at the intersections of the three pixel regions, and the support effect is good, so that each Device accuracy is consistent across regions.
  • the shape and structure of the supporting pillars are controlled through exposure process parameters such as exposure intensity, exposure amount, and direction of incidence of light, so that the supporting pillars formed have a lower bottom facing the substrate and opposite to the lower bottom It is provided to support the upper top of the mask plate used in the organic light emitting diode process, and the side connecting the upper top and the lower bottom; the area of the lower bottom is not larger than the first pixel area, the second pixel area, and the third area.
  • the area at the intersection of the pixel area, the area of the top and bottom is not larger than the area of the bottom, so that the support pillars are formed only at the intersection as a whole, without affecting the accuracy of other film layers in subsequent organic light emitting diode processes, It also reduces the wear of the support post in subsequent processes.
  • the area of the lower base is smaller than the area of the intersection, and even in the manufacturing process of the support pillar, the support pillar is located in the first pixel area, even when the position of the support pillar is misaligned due to unavoidable process deviation.
  • the intersection of the second pixel region and the third pixel region does not cross the pixel region, thereby preventing the support pillar from being worn in the subsequent processes.
  • the inclination angle (taper angle) of the side and the bottom of the support column is between 20 ° and 80 °, which can achieve better support performance and ensure subsequent process accuracy.
  • the above-mentioned method is used to prepare the support column in a quadrangular pyramid shape
  • the lower base is a square with a side length between 5 ⁇ m and 15 ⁇ m, and the angle (taper angle) between the side and the lower bottom
  • the height is designed to be higher than the structure film layer of the organic light emitting diode
  • the length of the upper side is determined by the side length of the lower bottom, the taper angle, and its height.
  • the upper bottom The side length is between 0 ⁇ m and 10 ⁇ m.
  • the bottom is 10 ⁇ m ⁇ 10 ⁇ m
  • the taper angle is 33 °
  • the top is 5 ⁇ m ⁇ 5 ⁇ m.
  • the anode of the organic light emitting diode is formed on the TFT back plate before the pixel defining layer.
  • the preparation method of the organic light emitting diode includes: preparing an anode array corresponding to the TFT array on the TFT backplane, a part of the anode is covered by the pixel defining layer prepared subsequently, and another part is covered by the The first pixel area, the second pixel area, and the third pixel area on the pixel defining layer are exposed upward; and an emission layer capable of emitting different colors of light such as red light, green light, and blue light is prepared on the exposed portion of the anode, An organic light emitting layer is formed; the cathode is prepared on the organic light emitting layer to form an organic light emitting diode array.
  • the present application further provides a mask plate for preparing a support post.
  • the mask plate 100 has a mask plate and a plurality of through holes 3 penetrating the mask plate.
  • the shielding plate is used for shielding light
  • the through hole 3 is used for light to pass through.
  • the masking board has a plurality of pixel definition areas 1.
  • the plurality of pixel definition areas 1 include at least a first pixel definition area, a second pixel definition area, and a third pixel definition area.
  • the pixel area, the second pixel area, and the third pixel area correspond one-to-one; the through holes 3 are located at the intersection 2 of the first pixel definition area, the second pixel definition area, and the third pixel definition area.
  • FIG. 1 can also be regarded as a top view of the above substrate.
  • the pixel definition area 1 is the pixel area
  • the intersection 2 is the first pixel area, the second pixel area, and the third pixel area.
  • 3 through-holes are where the support posts are set.
  • the “intersection 2 of the first pixel definition area, the second pixel definition area, and the third pixel definition area” refers to a blank position between the three pixel definition areas 1, that is, the first pixel definition area, the first pixel definition area, and the third pixel definition area.
  • the shape and size of the two pixel definition areas and the third pixel definition area adjacent to each other are determined by the surrounding three pixel definition areas. Therefore, the support pillar formed by the mask 100 is located at the boundary of the first pixel region, the second pixel region, and the third pixel region. The area at the intersection of the three pixel regions is larger than that of any two adjacent pixel regions.
  • the supporting pillar has a relatively large diameter and supporting force, which can effectively support subsequent mask plates; at the same time, the upper surface of the supporting pillar will not be in contact with the mask forming the organic light emitting layer The edge of the opening of the plate is in contact, so that the support pillar can be prevented from being scratched by the subsequent mask plate, and the black spot phenomenon caused by the scratch of the support pillar can be effectively avoided.
  • the first pixel definition area corresponds to the R pixel area
  • the second pixel definition area corresponds to the G pixel area
  • the third pixel definition area corresponds to the B pixel area.
  • the arrangement manner of the plurality of pixel definition areas on the mask plate 100 is not limited, and any one of the prior art may be adopted.
  • the widths of the first pixel definition area, the second pixel definition area, and the third pixel definition area are substantially the same.
  • the length of the third pixel definition area is greater than the length of the first pixel area, and the length of the third pixel definition area is greater than
  • the length of the second pixel definition area, the first pixel definition area, the second pixel definition area, and the third pixel definition area are aligned along their width direction, alternately arranged along one direction of the substrate, and two adjacent columns of pixels
  • the arrangement phase of the definition area is misaligned; specifically, the boundary between the first pixel definition area and the second pixel definition area of one column is flush with the third pixel definition area of an adjacent column.
  • the boundary between the first pixel definition area and the second pixel definition area of one column is substantially flush with the mid-point line of the third pixel definition area of the adjacent column in the length direction", so the first pixel definition area
  • the intersection of the second pixel definition area and the third pixel definition area is located between any two adjacent columns of pixel definition areas.
  • the length of the third pixel definition area is greater than the length of the first pixel definition area and not more than twice the length of the first pixel definition area, and the length of the third pixel definition area is greater than that of the second pixel definition area.
  • the length is not more than twice the length of the second pixel definition area.
  • the length of the third pixel definition area is substantially twice the length of the first pixel definition area, and the length of the third pixel definition area is substantially the length of the second pixel definition area. double.
  • the area of the intersection at the edge of the third pixel definition area is smaller than the area of the intersection at the corner of the third pixel definition area; the through hole 3 is preferably provided at the intersection at the corner of the third pixel definition area ,
  • the supporting strength is large, and there is less chance of abrasion with the mask in the subsequent process.
  • the area of the through hole 3 is not larger than the area 2 of the intersection 2 of the first pixel definition area, the second pixel definition area, and the third pixel definition area, so that the support pillar is formed only at the intersection and does not affect subsequent The accuracy of other film layers in the process will also reduce the wear of the support post in subsequent processes.
  • the area of the through hole 3 is smaller than the area of the intersection, and even in the manufacturing process of the support pillar, the support pillar is positioned at the first pixel even when the position of the support pillar is misaligned due to unavoidable process deviation.
  • the intersection of the pixel region, the second pixel region, and the third pixel region does not cross the pixel region, so that the support pillar can be prevented from being worn in the subsequent process.
  • the density of the through holes 3 is designed as follows: there are approximately 25 to 350 through holes 3 on the mask plate 100 with an area of 1 mm 2. If the density of the through holes 3 is too large, the number of supporting pillars will increase, which increases the probability of black spots caused by the wear of the supporting pillars. If the density of the through holes 3 is too small, the number of supporting pillars will be too small. The support strength of the FMM mask plate 100 in the process section is insufficient or the support points are uneven, which causes the FMM mask plate 100 to deflect, which will affect the accuracy of the organic light emitting diode process section.
  • a plurality of through-holes 3 are evenly distributed on the intersection 2, and the supporting pillars formed have a good supporting effect, and can ensure the process accuracy of each area.
  • the support pillar is located at the intersection of the first pixel region, the second pixel region, and the third pixel region, so that the support pillar has a relatively large diameter and support. Force, which can effectively support subsequent mask plates; at the same time, the upper surface of the support pillars will not contact the edge of the opening of the high-precision metal mask plate forming the organic light-emitting layer, so that the support pillars can be prevented from being subsequently The mask is scratched, which effectively avoids the black spots caused by scratches on the support column.

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Abstract

本申请提供一种有机发光显示装置，包括：基板，具有像素限定层，像素限定层界定了若干像素区；位于像素限定层上的若干支撑柱；且1平方毫米基板上具有25～350个所述支撑柱；位于所述基板上的有机发光二极管，使支撑柱具有较大的直径和支撑力，能对后续的掩膜板进行有效支撑。

Description

有机发光显示设备及其制备方法、制备支撑柱的掩膜板
本申请要求了申请日为2018年09月28日，申请号为201811142834.0，申请名称为“有机发光显示设备及其制备方法、制备支撑柱的掩膜板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及有机发光显示装置的技术领域，尤其涉及一种有机发光显示装置、制备方法及制备过程中用于制备支撑柱的掩膜板。
背景技术
有机发光二极管(OLED，Organic Light Emitting Diode)是一种有机薄膜电致发光器件，其具有制备工艺简单、成本低、发光效率高、易形成柔性结构等优点；已成为一种重要的显示技术。
OLED包括被动矩阵OLED、主动矩阵OLED、透明OLED、顶部发光OLED、可折叠OLED、白光OLED等。其中，主动矩阵OLED(AMOLED)的制作工艺主要分为背板段，前板段以及模组段三道工艺。
背板段工艺用以形成TFT背板，其为发光器件提供点亮信号以及稳定的电源输入。前板段工艺通过高精度金属掩膜板(FMM)将有机发光材料以及阴极等材料蒸镀在背板上，与驱动电路结合形成发光器件，再在无氧环境中进行封装以起到保护作用。蒸镀的对位精度与封装的气密性都是前板段工艺的挑战所在。模组段工艺将封装完毕的面板切割成实际产品大小，之后再进行偏光片贴附、控制线路与芯片贴合等各项工艺，并进行老化测试以及产品包装，最终呈现为客户手中的产品。
申请内容
本申请的目的主要是针对减少支撑柱损伤而采取的一些措施，制定了能够减小支撑柱损伤、封装效果好的有机发光显示装置、有机发光显示装置制备方法及用于制备支撑柱的掩膜板。
为实现上述申请目的，本申请提供了一种有机发光显示装置，包括：基板，所述基板上具有像素限定层，所述像素限定层界定了若干像素区，所述若干像素区至少包括若干第一像素区、若干第二像素区、若干第三像素区；位于所述像素限定层上的若干支撑柱，所述支 撑柱位于第一像素区、第二像素区、第三像素区的交叉处；且1平方毫米所述基板上具有25～350个所述支撑柱；位于所述基板上的有机发光二极管，所述有机发光二极管包括阳极、有机发光层和阴极。
进一步地，所述支撑柱具有朝向所述基板的下底、与所述下底相对设置的上顶、连接所述上顶与所述下底的侧面；所述下底的面积不大于第一像素区、第二像素区、第三像素区的交叉处的面积，所述上顶的面积不大于所述下底的面积。
进一步地，所述支撑柱的侧面与下底的倾斜角介于20°～80°之间。
进一步地，所述第一像素区、第二像素区、第三像素区中的三个像素区的交叉处的面积大于任意两个相邻的像素区之间的面积。
进一步地，第一像素区、第二像素区、第三像素区的宽度一致；所述第三像素区的长度大于第一像素区的长度，所述第三像素区的长度大于第二像素区的长度；或者所述第三像素区的长度大于第一像素区的长度且不大于第一像素区的长度的两倍，所述第三像素区的长度大于第二像素区的长度且不大于第二像素区的长度的两倍。
进一步地，所述第一像素区、第二像素区、第三像素区呈宽度方向对齐式且沿所述基板的一个方向交替排布，且一列的第一像素区和第二像素区的交界处与相邻一列的所述第三像素区相平齐。
进一步地，所述支撑柱位于第三像素区的角部处的交叉处。
进一步地，若干支撑柱均匀地分布于所述第一像素区、第二像素区、第三像素区的交叉处上。
进一步地，所述基板为TFT基板，所述TFT基板包括衬底、设于所述衬底上的若干薄膜晶体管。
进一步地，所述支撑柱呈四棱锥形。
进一步地，所述支撑柱的上表面不会与形成所述有机发光层的金属掩膜板的开孔边缘接触。
为实现上述申请目的，本申请还提供一种有机发光显示装置的制备方法，包括如下步骤：在基板上制备像素限定层，所述像素限定层界定了若干像素区，若干像素区包括若干第 一像素区、若干第二像素区、若干第三像素区；于第一像素区、第二像素区、第三像素区的交叉处形成支撑柱；且在1平方毫米的所述基板上形成25～350个所述支撑柱；于所述基板上制备有机发光二极管，所述有机发光二极管包括阳极、有机发光层和阴极。
进一步地，在所述基板上均匀分布的若干交叉处上制备所述支撑柱。
进一步地，所述支撑柱的制备方法为：采用光敏树脂胶在所述基板上制作光敏树脂胶层，将掩膜板固定于所述光敏树脂胶层上方，对所述光敏树脂胶层进行曝光、显影和刻蚀处理，在与所述掩膜板上的曝光孔对应的位置处制得所述支撑柱。
进一步地，第一像素区、第二像素区、第三像素区的宽度一致，第三像素区的长度大于第一像素区的长度，第三像素区的长度大于第二像素区的长度；第一像素区、第二像素区、第三像素区呈宽度方向对齐式且沿所述基板的一个方向交替排布，且一列的第一像素区和第二像素区的交界处与相邻一列的所述第三像素区相平齐，于第三像素区的角部处的交叉处形成所述支撑柱。
进一步地，所述支撑柱具有朝向所述基板的下底、与所述下底相对设置的上顶、连接所述上顶与所述下底的侧面；所述下底的面积不大于第一像素区、第二像素区、第三像素区的交叉处的面积，所述上顶的面积不大于所述下底的面积，所述支撑柱的侧面与下底的倾斜角介于20°～80°之间。
进一步地，所述下底的面积小于第一像素区、第二像素区、第三像素区的交叉处的面积。
为实现上述申请目的，本申请还提供一种用于制备支撑柱的掩膜板，其包括：遮蔽板，所述遮蔽板上界定有若干像素定义区，若干像素定义区至少包括第一像素定义区、第二像素定义区、第三像素定义区；贯穿所述掩膜板的通孔，若干通孔位于第一像素定义区、第二像素定义区、第三像素定义区的交叉处，且1平方毫米的掩膜板上具有25～350个所述通孔。
进一步地，第一像素定义区、第二像素定义区、第三像素定义区的宽度一致，第三像素定义区的长度大于第一像素定义区的长度，第三像素定义区的长度大于第二像素定义区的长度；第一像素定义区、第二像素定义区、第三像素定义区呈宽度方向对齐式且沿所述基板的一个方向交替排布，且一列的第一像素定义区和所述第二像素定义区的交界处与相邻一列 的第三像素定义区相平齐，所述通孔位于第三像素定义区的角部处的交叉处。
进一步地，若干通孔均匀地分布于所述第一像素定义区、第二像素定义区、第三像素定义区的交叉处。
本申请的有机发光显示装置，通过将所述支撑柱设置于第一像素区、第二像素区、第三像素区的交叉处，使得所述支撑柱具有相对较大的直径和支撑力，能对后续的掩膜板进行有效地支撑；同时，所述支撑柱的上表面不会与形成有机发光层的高精度金属掩膜板的开孔边缘接触，从而可以避免支撑柱被后续掩膜板刮伤，有效避免由支撑柱刮伤而引起的黑点现象。
附图说明
图1是本申请一较佳实施方式中部分掩膜板的结构示意图。
具体实施方式
以下将结合附图所示的具体实施方式对本申请进行详细描述。但这些实施方式并不限制本申请，本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本申请的保护范围内。
在本申请的各个图示中，为了便于图示，结构或部分的某些尺寸会相对于其它结构或部分夸大，因此，仅用于图示本申请的主题的基本结构。
通常，需要在TFT背板上设置支撑柱(Spacer柱，或简称SPC柱)，用以支撑前板段工艺中使用的各种掩膜板；该支撑柱位于OLED的G像素区与B像素区的交界处。然而，从5.99寸柔性显示屏从首次流片开始，可靠性出现了黑点不良的问题，解析确认后认为：支撑柱异常引起的黑点不良占比为80％，第一层SiNx破裂，水和氧气进入后导致封装失效。
有鉴于此，有必要提供一种改进的有机发光显示装置、制备方法及制备过程中用于制备支撑柱的掩膜板，以解决上述技术问题。
本申请的有机发光显示装置，包括具有像素限定层的基板、位于所述像素限定层上的支撑柱及位于所述基板上的有机发光二极管(OLED)。
所述基板优选为TFT基板，其包括衬底、设于所述衬底上的若干薄膜晶体管(TFT阵列)。其中，薄膜晶体管与有机发光显示装置的像素区的对应关系为现有技术，于此不再赘述。
所述像素限定层界定了若干像素区，所述像素区至少包括若干第一像素区、若干第二 像素区、若干第三像素区；用于示范的，第一像素区为R(红色)像素区，第二像素区为G(绿色)像素区，第三像素区为B(蓝色)像素区。
若干所述像素区的排列方式不限，可以采用现有技术中任意一种。例如，本申请中，第一像素区、第二像素区、第三像素区的宽度基本一致，第三像素区的长度大于第一像素区的长度，第三像素区的长度大于第二像素区的长度，第一像素区、第二像素区、第三像素区沿其宽度方向相对齐，且沿所述基板的一个方向交替排布，且相邻的两列像素区的排布相错位；具体地，一列的所述第一像素区和第二像素区的交界处与相邻一列的第三像素区相平齐，本领域技术人员对此可以理解为“一列的所述第一像素区和第二像素区的交界处与相邻一列的第三像素区在长度方向的中分线大致相平齐”，因此第一像素区、第二像素区、第三像素区的交叉处位于任意相邻两列像素区之间。
优选地，所述第三像素区的长度大于第一像素区的长度且不大于第一像素区的长度的两倍，所述第三像素区的长度大于第二像素区的长度且不大于第二像素区的长度的两倍。
于一具体实施方式中，所述第三像素区的长度大体上是第一像素区的长度的两倍，所述第三像素区的长度大体上是第二像素区的长度的两倍。
位于第三像素区的边部处的交叉处的面积小于位于第三像素区的角部处的交叉处的面积；所述支撑柱优选设置于位于第三像素区的角部处的交叉处，支撑力度大，且与后续工艺中掩膜板的磨损几率较少。
所述支撑柱用以在制备有机发光二极管过程中支撑各膜层制备工艺中用到的掩膜板，还可以在具有封装结构的实施例中起到支撑所述封装结构的作用。本申请中，所述支撑柱位于第一像素区、第二像素区、第三像素区的交叉处。本领域技术人员可以理解的是：“第一像素区、第二像素区、第三像素区的交叉处”指的是三种像素区之间的空白位置处，即与第一像素区、第二像素区、第三像素区均相邻的空白位置处，其形状和大小由周围的三种像素区决定。
三种像素区的交叉处的面积大于任意两个相邻的像素区之间的面积，因此所述支撑柱具有相对较大的直径和支撑力，能对后续的掩膜板进行有效地支撑；同时，所述支撑柱的上顶面不会与形成有机发光层的高精度金属掩膜板的开孔边缘接触，从而可以避免支撑柱的上 顶面被后续用到的掩膜板刮伤，有效避免由所述支撑柱刮伤而引起的黑点现象。
所述支撑柱的密度被设计为：1平方毫米的所述基板上有25～350个支撑柱。支撑柱的密度过大，增大了支撑柱磨损引起黑点不良的几率；而支撑柱的密度过小，对后续有机发光二极管工艺段FMM掩膜板的支撑力度不够或支撑点不均匀，导致FMM掩膜板偏斜，会影响有机发光二极管器件工艺段的精度。
优选地，若干支撑柱均匀地分布于所述三种像素区的交叉处上，支撑效果好，使得各个区域的器件精度一致。
进一步地，所述支撑柱具有朝向所述基板的下底、与所述下底相对设置以支撑有机发光二极管工艺中所用的掩膜板的上顶、连接所述上顶与所述下底的侧面；所述下底的面积不大于第一像素区、第二像素区、第三像素区的交叉处的面积，所述上顶的面积不大于所述下底的面积，使得所述支撑柱仅形成于交叉处，不会影响后续有机发光二极管工艺中其他膜层的精度，也会减少支撑柱在后续工艺中的磨损。
优选地，所述下底的面积小于交叉处的面积，即使在所述支撑柱的制造工艺中，由于不可避免的工艺偏差而引起支撑柱位置错位时，也能保证支撑柱位于第一像素区、第二像素区、第三像素区的交叉处而不会与周围的像素区交叉，从而可避免支撑柱在后续工艺中被磨损。同时，也可以避免在后续有机发光二极管制备工艺中，因为掩膜板的安装误差所带来的磨损。
所述支撑柱的侧面与下底的倾斜角(taper角)介于20°～80°之间，可实现较好的支撑性能，保证后续工艺精度。本领域技术人员可以理解的是，所述支撑柱的高度被设计为高于有机发光二极管的结构膜层，其上顶的面积由下底面积、倾斜角和支撑柱的高度决定。
本申请一较佳实施例中，所述支撑柱呈四棱锥形，其下底为边长介于5μm～15μm之间的正方形，侧面与下底的夹角(taper角)介于20°～80°之间，高度被设计为高于有机发光二极管的结构膜层，其上顶的边长由下底的边长、taper角及其高度决定，例如，所述上底边长介于0μm～10μm之间。一具体参考实施例中，其下底为10μm*10μm，taper角为33°，上顶为5μm*5μm。
所述有机发光二极管包括阳极、有机发光层和阴极，所述阳极的一部分被所述像素限 定层覆盖，另一部分由所述像素限定层上的第一像素区、第二像素区、第三像素区向上暴露；所述有机发光层位于所述阳极的暴露部分上并被构造成能够发射红光、绿光、蓝光等不同颜色光的发射层；所述阴极位于所述有机发光层上。
进一步地，所述有机发光显示装置还包括密封结构，所述密封结构与所述TFT背板相对设置。所述TFT背板、所述像素限定层、所述有机发光二极管、所述密封结构的其他结构及其作用、以及各个结构的位置关系和制备方法可参考采用现有技术，于此不再赘述。
本申请还提供一种有机发光显示装置的制备方法，包括如下步骤：在基板上制备像素限定层，所述像素限定层界定了若干像素区，若干像素区至少包括若干第一像素区、若干第二像素区、若干第三像素区，用于示范的，第一像素区为R像素区，第二像素区为G像素区，第三像素区为B像素区；于第一像素区、第二像素区、第三像素区的交叉处形成支撑柱；于所述基板上制备有机发光二极管，所述有机发光二极管包括阳极、有机发光层和阴极。
本领域技术人员可以理解的是：“第一像素区、第二像素区、第三像素区的交叉处”指的是三种像素区之间的空白位置处，即与第一像素区、第二像素区、第三像素区均相邻的空白位置处，其形状和大小由周围的三种像素区决定。因此，于第一像素区、第二像素区、第三像素区的交叉处形成所述支撑柱位于三种像素区之间的空白位置处，所述支撑柱具有相对较大的直径和支撑力，能对后续的掩膜板进行有效地支撑；同时，所述支撑柱的上顶面不会与形成有机发光层的掩膜板的开孔边缘接触，从而可以避免所述支撑柱的上顶面被后续掩膜板刮伤，有效避免由所述支撑柱刮伤而引起的黑点现象。
若干所述像素区的排列方式不限，可以采用现有技术中任意一种。例如本申请中，第一像素区、第二像素区、第三像素区的宽度基本一致，第三像素区的长度大于第一像素区的长度，第三像素区的长度大于第二像素区的长度，第一像素区、第二像素区、第三像素区沿其宽度方向对齐，且沿所述基板的一个方向交替排布，且相邻的两列像素区的排布相错位；具体地，一列的所述第一像素区和第二像素区的交界处与相邻一列的第三像素区相平齐，本领域技术人员对此可以理解为“一列的所述第一像素区和第二像素区的交界处与相邻一列的第三像素区在长度方向的中分线大致相平齐”，因此第一像素区、第二像素区、第三像素区的交叉处位于任意相邻两列像素区之间。
优选地，所述第三像素区的长度大于第一像素区的长度且不大于第一像素区的长度的两倍，所述第三像素区的长度大于第二像素区的长度且不大于第二像素区的长度的两倍。
于一具体实施方式中，所述第三像素区的长度大体上是第一像素区的长度的两倍，所述第三像素区的长度大体上是第二像素区的长度的两倍。
位于第三像素区的边部处的交叉处的面积小于位于第三像素区的角部处的交叉处的面积；优选地于第三像素区的角部处的交叉处形成所述支撑柱，支撑力度大，且与后续工艺中掩膜板的磨损几率较少。
具体地，所述基板为TFT背板，所述TFT背板的制备方法为：在玻璃、塑料等基底上制备若干薄膜晶体管阵列(TFT阵列)构成TFT背板。其中，所述薄膜晶体管阵列与所述像素区的对应关系为现有技术，于此不再赘述。
在TFT背板上制备所述像素限定层采用现有工艺，于此不再赘述。
所述支撑柱的制备方法具体为：采用光敏树脂胶在所述基板上制作光敏树脂胶层，将掩膜板固定于所述光敏树脂胶层上方，对所述光敏树脂胶层进行曝光、显影和刻蚀处理，在与所述掩膜板上的曝光孔对应的位置处获得所述支撑柱。
具体地，采用上述方法在1平方毫米的所述基板上制备25～350个所述支撑柱。支撑柱的密度过大，增大了支撑柱磨损引起黑点不良的几率；而支撑柱的密度过小，对后续有机发光二极管工艺段FMM掩膜板的支撑力度不够或支撑点不均匀，导致FMM掩膜板偏斜，会影响有机发光二极管器件工艺段的精度。
优选地，在所述基板上均匀分布的若干交叉处上制备所述支撑柱，从而形成的若干所述支撑柱均匀地分布于所述三种像素区的交叉处上，支撑效果好，使得各个区域的器件精度一致。
进一步地，通过曝光强度、曝光量、光线的入射方向等曝光工艺参数，控制所述支撑柱的形状结构，使得形成的所述支撑柱具有朝向所述基板的下底、与所述下底相对设置以支撑有机发光二极管工艺中所用的掩膜板的上顶、连接所述上顶与所述下底的侧面；所述下底的面积不大于第一像素区、第二像素区、第三像素区的交叉处的面积，所述上顶的面积不大于所述下底的面积，使得所述支撑柱整体仅形成于交叉处，不会影响后续有机发光二极管工 艺中其他膜层的精度，也会减少支撑柱在后续工艺中的磨损。
优选地所述下底的面积小于交叉处的面积，即使在所述支撑柱的制造工艺中，由于不可避免的工艺偏差而引起支撑柱位置错位时，也能保证支撑柱位于第一像素区、第二像素区、第三像素区的交叉处而不会与像素区交叉，从而可避免支撑柱在后续工艺中被磨损。同时，也可以避免在后续有机发光二极管制备工艺中，因为掩膜板的安装误差所带来的磨损。
并且，所述支撑柱的侧面与下底的倾斜角(taper角)介于20°～80°之间，可实现较好的支撑性能，保证后续工艺精度。
本申请一较佳实施例中，采用上述方法制备呈四棱锥形的所述支撑柱，其下底为边长介于5μm～15μm之间的正方形，侧面与下底的夹角(taper角)介于20°～80°之间，高度被设计为高于有机发光二极管的结构膜层，其上顶的边长由下底的边长、taper角及其高度决定，例如，所述上底边长介于0μm～10μm之间。一具体参考实施例中，其下底为10μm*10μm，taper角为33°，上顶为5μm*5μm。
本申请中，所述有机发光二极管的阳极先于所述像素限定层形成于所述TFT背板上。具体地，所述有机发光二极管的制备方法包括：在所述TFT背板上制备与TFT阵列相对应的阳极阵列，所述阳极的一部分被后续制备的所述像素限定层覆盖，另一部分由所述像素限定层上的第一像素区、第二像素区、第三像素区向上暴露；于所述阳极的暴露部分上制备能够发射红光、绿光、蓝光等不同颜的光的发射层，构成有机发光层；于所述有机发光层上制备所述阴极，构成有机发光二极管阵列。
如图1所示，本申请还提供一种用于制备支撑柱的掩膜板，所述掩膜板100具有遮蔽板和贯穿所述掩膜板的若干通孔3。本领域技术人员可以理解的是，所述遮蔽板用于遮蔽光，所述通孔3供光穿过。
其中，所述遮蔽板上具有若干像素定义区1，若干所述像素定义区1至少包括第一像素定义区、第二像素定义区、第三像素定义区，且与有机发光显示装置的第一像素区、第二像素区、第三像素区一一对应；所述通孔3位于第一像素定义区、第二像素定义区、第三像素定义区的交叉处2。
本领域技术人员可以理解的是，该图1也可以看作是上述基板的俯视图，像素定义区 1即为像素区，交叉处2即为第一像素区、第二像素区、第三像素区的交叉处，通孔3处即为设置支撑柱的位置。
另外，“第一像素定义区、第二像素定义区、第三像素定义区的交叉处2”指的是三种像素定义区1之间的空白位置处，即与第一像素定义区、第二像素定义区、第三像素定义区均相邻的空白位置处，其形状和大小由周围的三种像素定义区决定。因此，通过该掩膜板100形成的支撑柱位于第一像素区、第二像素区、第三像素区的交界处，三种像素区的交叉处的面积大于任意两个相邻的像素区之间的面积，因此所述支撑柱具有相对较大的直径和支撑力，能对后续的掩膜板进行有效地支撑；同时，所述支撑柱的上表面不会与形成有机发光层的掩膜板的开孔边缘接触，从而可以避免支撑柱被后续掩膜板刮伤，有效避免由支撑柱刮伤而引起的黑点现象。
本申请中，第一像素定义区与R像素区相对应，第二像素定义区与G像素区相对应，第三像素定义区与B像素区相对应。掩膜板100上的若干所述像素定义区的排列方式不限，可以采用现有技术中任意一种。例如本申请中，第一像素定义区、第二像素定义区、第三像素定义区的宽度基本一致，第三像素定义区的长度大于第一像素区的长度，第三像素定义区的长度大于第二像素定义区的长度，第一像素定义区、第二像素定义区、第三像素定义区沿其宽度方向对齐式，沿所述基板的一个方向交替排布，且相邻的两列像素定义区的排布相错位；具体地，一列的所述第一像素定义区和第二像素定义区的交界处与相邻一列的第三像素定义区相平齐，本领域技术人员对此可以理解为“一列的所述第一像素定义区和第二像素定义区的交界处与相邻一列的第三像素定义区在长度方向的中分线大致相平齐”，因此第一像素定义区、第二像素定义区、第三像素定义区的交叉处位于任意相邻两列像素定义区之间。
优选地，所述第三像素定义区的长度大于第一像素定义区的长度且不大于第一像素定义区的长度的两倍，所述第三像素定义区的长度大于第二像素定义区的长度且不大于第二像素定义区的长度的两倍。
于一具体实施方式中，所述第三像素定义区的长度大体上是第一像素定义区的长度的两倍，所述第三像素定义区的长度大体上是第二像素定义区的长度的两倍。
第三像素定义区的边部处的交叉处的面积小于第三像素定义区的角部处的交叉处的 面积；所述通孔3优选设置于第三像素定义区的角部处的交叉处，支撑力度大，且与后续工艺中掩膜板的磨损几率较少。
所述通孔3的面积不大于第一像素定义区、第二像素定义区、第三像素定义区的交叉处2的面积，使得所述支撑柱仅形成于所述交叉处，不会影响后续工艺中其他膜层的精度，也会减少支撑柱在后续工艺中的磨损。
优选地，所述通孔3的面积小于交叉处的面积，即使在所述支撑柱的制造工艺中，由于不可避免的工艺偏差而引起支撑柱位置错位时，也能保证支撑柱位于第一像素区、第二像素区、第三像素区的交叉处而不会与像素区交叉，从而可避免支撑柱在后续工艺中被磨损。
所述通孔3的密度被设计为：1平方毫米面积的掩膜板100上大约有25～350个通孔3。通孔3的密度过大，形成的支撑柱的数量会增加，增大了支撑柱磨损引起黑点不良的几率；通孔3的密度过小，则形成的支撑柱的数量过少，对后续工艺段FMM掩膜板100的支撑力度不够或支撑点不均匀，导致FMM掩膜板100偏斜，会影响有机发光二极管工艺段的精度。
优选地，若干通孔3均匀地分布于所述交叉处2上，形成的所述支撑柱的支撑效果好，能够保证各个区域工艺精度。
综上所述，本申请的有机发光显示装置，通过所述支撑柱位于第一像素区、第二像素区、第三像素区的交叉处，使得所述支撑柱具有相对较大的直径和支撑力，能对后续的掩膜板进行有效地支撑；同时，所述支撑柱的上表面不会与形成有机发光层的高精度金属掩膜板的开孔边缘接触，从而可以避免支撑柱被后续掩膜板刮伤，有效避免由支撑柱刮伤而引起的黑点现象。
应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施方式中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。
上文所列出的一系列的详细说明仅仅是针对本申请的可行性实施方式的具体说明，它们并非用以限制本申请的保护范围，凡未脱离本申请技艺精神所作的等效实施方式或变更均应包含在本申请的保护范围之内。

Claims (20)

  1. 一种有机发光显示装置，其中，包括：
    基板，所述基板上具有像素限定层，所述像素限定层界定了若干像素区，所述若干像素区至少包括若干第一像素区、若干第二像素区、若干第三像素区；
    位于所述像素限定层上的若干支撑柱，所述支撑柱位于第一像素区、第二像素区、第三像素区的交叉处；且1平方毫米所述基板上具有25～350个所述支撑柱；及
    位于所述基板上的有机发光二极管，所述有机发光二极管包括阳极、有机发光层和阴极。
  2. 根据权利要求1所述的有机发光显示装置，其中：所述支撑柱具有朝向所述基板的下底、与所述下底相对设置的上顶、连接所述上顶与所述下底的侧面；所述下底的面积不大于第一像素区、第二像素区、第三像素区的交叉处的面积，所述上顶的面积不大于所述下底的面积。
  3. 根据权利要求2所述的有机发光显示装置，其中：所述支撑柱的侧面与下底的倾斜角介于20°～80°之间。
  4. 根据权利要求2所述的有机发光显示装置，其中：所述第一像素区、第二像素区、第三像素区中的三个像素区的交叉处的面积大于任意两个相邻的像素区之间的面积。
  5. 根据权利要求1所述的有机发光显示装置，其中：第一像素区、第二像素区、第三像素区的宽度一致；所述第三像素区的长度大于第一像素区的长度，所述第三像素区的长度大于第二像素区的长度；或者所述第三像素区的长度大于第一像素区的长度且不大于第一像素区的长度的两倍，所述第三像素区的长度大于第二像素区的长度且不大于第二像素区的长度的两倍。
  6. 根据权利要求5所述的有机发光显示装置，其中：所述第一像素区、第二像素区、第三像素区呈宽度方向对齐式且沿所述基板的一个方向交替排布，且一列的第一像素区和第二像素区的交界处与相邻一列的所述第三像素区相平齐。
  7. 根据权利要求6所述的有机发光显示装置，其中：所述支撑柱位于所述第三像素 区的角部处的交叉处。
  8. 根据权利要求1所述的有机发光显示装置，其中：若干支撑柱均匀地分布于所述第一像素区、第二像素区、第三像素区的交叉处。
  9. 根据权利要求1所述的有机发光显示装置，其中：所述基板为TFT基板，所述TFT基板包括衬底、设于所述衬底上的若干薄膜晶体管。
  10. 根据权利要求1所述的有机发光显示装置，其中：所述支撑柱呈四棱锥形。
  11. 根据权利要求1所述的有机发光显示装置，其中：所述支撑柱的上表面不会与形成所述有机发光层的金属掩膜板的开孔边缘接触。
  12. 一种有机发光显示装置的制备方法，其中：包括如下步骤：
    在基板上制备像素限定层，所述像素限定层界定了若干像素区，若干像素区包括若干第一像素区、若干第二像素区、若干第三像素区；
    于第一像素区、第二像素区、第三像素区的交叉处形成支撑柱；且在1平方毫米的所述基板上形成25～350个所述支撑柱；
    于所述基板上制备有机发光二极管，所述有机发光二极管包括阳极、有机发光层和阴极。
  13. 根据权利要求12所述的有机发光显示装置的制备方法，其中：在所述基板上均匀分布的若干交叉处上制备所述支撑柱。
  14. 根据权利要求12所述的有机发光显示装置的制备方法，其中，所述支撑柱的制备方法为：采用光敏树脂胶在所述基板上制作光敏树脂胶层，将掩膜板固定于所述光敏树脂胶层上方，对所述光敏树脂胶层进行曝光、显影和刻蚀处理，在与所述掩膜板上的曝光孔对应的位置处制得所述支撑柱。
  15. 根据权利要求12所述的有机发光显示装置的制备方法，其中：第一像素区、第二像素区、第三像素区的宽度一致，第三像素区的长度大于第一像素区的长度，第三像素区的长度大于第二像素区的长度；第一像素区、第二像素区、第三像素区呈宽度方向对齐式且沿所述基板的一个方向交替排布，且一列的第一像素区和第二像素区的交界处与相邻一列的所述第三像素区相平齐，于第三像素区的角部处的交叉处形成所述支撑柱。
  16. 根据权利要求12所述的有机发光显示装置的制备方法，其中：所述支撑柱具有朝向所述基板的下底、与所述下底相对设置的上顶、连接所述上顶与所述下底的侧面；所述下底的面积不大于第一像素区、第二像素区、第三像素区的交叉处的面积，所述上顶的面积不大于所述下底的面积，所述支撑柱的侧面与下底的倾斜角介于20°～80°之间。
  17. 根据权利要求16所述的有机发光显示装置，其中：所述下底的面积小于第一像素区、第二像素区、第三像素区的交叉处的面积。
  18. 一种用于制备支撑柱的掩膜板，其中：包括：
    遮蔽板，所述遮蔽板上界定有若干像素定义区，若干像素定义区至少包括第一像素定义区、第二像素定义区、第三像素定义区；
    贯穿所述掩膜板的通孔，若干通孔位于第一像素定义区、第二像素定义区、第三像素定义区的交叉处，且1平方毫米的掩膜板上具有25～350个所述通孔。
  19. 根据权利要求18所述的用于制备支撑柱的掩膜板，其中：第一像素定义区、第二像素定义区、第三像素定义区的宽度一致，第三像素定义区的长度大于第一像素定义区的长度，第三像素定义区的长度大于第二像素定义区的长度；第一像素定义区、第二像素定义区、第三像素定义区呈宽度方向对齐式且沿所述基板的一个方向交替排布，且一列的第一像素定义区和所述第二像素定义区的交界处与相邻一列的第三像素定义区相平齐，所述通孔位于第三像素定义区的角部处的交叉处。
  20. 根据权利要求18所述的用于制备支撑柱的掩膜板，其中：若干通孔均匀地分布于所述第一像素定义区、第二像素定义区、第三像素定义区的交叉处。
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