WO2020049955A1 - 薬液、基板の処理方法 - Google Patents
薬液、基板の処理方法 Download PDFInfo
- Publication number
- WO2020049955A1 WO2020049955A1 PCT/JP2019/031627 JP2019031627W WO2020049955A1 WO 2020049955 A1 WO2020049955 A1 WO 2020049955A1 JP 2019031627 W JP2019031627 W JP 2019031627W WO 2020049955 A1 WO2020049955 A1 WO 2020049955A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chemical solution
- mass
- substrate
- transition metal
- solution
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims abstract description 246
- 239000000758 substrate Substances 0.000 title claims abstract description 142
- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 138
- 150000003624 transition metals Chemical class 0.000 claims abstract description 138
- 150000001450 anions Chemical class 0.000 claims abstract description 93
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 57
- 150000003839 salts Chemical class 0.000 claims abstract description 13
- 239000000243 solution Substances 0.000 claims description 241
- 238000000034 method Methods 0.000 claims description 109
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 55
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 54
- 239000003814 drug Substances 0.000 claims description 48
- 229940079593 drug Drugs 0.000 claims description 48
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 40
- 150000001768 cations Chemical class 0.000 claims description 37
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 30
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 27
- 239000007864 aqueous solution Substances 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 23
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 16
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 229910052707 ruthenium Inorganic materials 0.000 claims description 14
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical group [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 5
- 239000012498 ultrapure water Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TWLXDPFBEPBAQB-UHFFFAOYSA-N orthoperiodic acid Chemical compound OI(O)(O)(O)(O)=O TWLXDPFBEPBAQB-UHFFFAOYSA-N 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- -1 hypochlorous acid compound Chemical class 0.000 abstract description 33
- TVWHTOUAJSGEKT-UHFFFAOYSA-N chlorine trioxide Chemical compound [O]Cl(=O)=O TVWHTOUAJSGEKT-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000000460 chlorine Substances 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 150000001875 compounds Chemical class 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 239000000908 ammonium hydroxide Substances 0.000 description 14
- 125000000217 alkyl group Chemical group 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 13
- 239000003002 pH adjusting agent Substances 0.000 description 13
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 10
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 150000001412 amines Chemical class 0.000 description 7
- 125000001183 hydrocarbyl group Chemical group 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 6
- 229940005991 chloric acid Drugs 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 125000001424 substituent group Chemical group 0.000 description 6
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 5
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 5
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 5
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- USJRLGNYCQWLPF-UHFFFAOYSA-N chlorophosphane Chemical group ClP USJRLGNYCQWLPF-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 150000007530 organic bases Chemical class 0.000 description 4
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 150000007529 inorganic bases Chemical class 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000005496 phosphonium group Chemical group 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 3
- WAGFXJQAIZNSEQ-UHFFFAOYSA-M tetraphenylphosphonium chloride Chemical compound [Cl-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 WAGFXJQAIZNSEQ-UHFFFAOYSA-M 0.000 description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 2
- XAMZZEBAJZJERT-UHFFFAOYSA-M 2-oxopropyl(triphenyl)phosphanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC(=O)C)C1=CC=CC=C1 XAMZZEBAJZJERT-UHFFFAOYSA-M 0.000 description 2
- ZKQDCIXGCQPQNV-UHFFFAOYSA-N Calcium hypochlorite Chemical compound [Ca+2].Cl[O-].Cl[O-] ZKQDCIXGCQPQNV-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- USFRYJRPHFMVBZ-UHFFFAOYSA-M benzyl(triphenyl)phosphanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)CC1=CC=CC=C1 USFRYJRPHFMVBZ-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- UXYBXUYUKHUNOM-UHFFFAOYSA-M ethyl(trimethyl)azanium;chloride Chemical compound [Cl-].CC[N+](C)(C)C UXYBXUYUKHUNOM-UHFFFAOYSA-M 0.000 description 2
- YOMFVLRTMZWACQ-UHFFFAOYSA-N ethyltrimethylammonium Chemical compound CC[N+](C)(C)C YOMFVLRTMZWACQ-UHFFFAOYSA-N 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 150000002443 hydroxylamines Chemical class 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004255 ion exchange chromatography Methods 0.000 description 2
- 238000010907 mechanical stirring Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 2
- DJFBJKSMACBYBD-UHFFFAOYSA-N phosphane;hydrate Chemical group O.P DJFBJKSMACBYBD-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 2
- WVULZDFWPQCPPJ-UHFFFAOYSA-N potassium;hydrochloride Chemical compound Cl.[K] WVULZDFWPQCPPJ-UHFFFAOYSA-N 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000004023 quaternary phosphonium compounds Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 2
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 2
- IBWGNZVCJVLSHB-UHFFFAOYSA-M tetrabutylphosphanium;chloride Chemical compound [Cl-].CCCC[P+](CCCC)(CCCC)CCCC IBWGNZVCJVLSHB-UHFFFAOYSA-M 0.000 description 2
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 2
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- FBEVECUEMUUFKM-UHFFFAOYSA-M tetrapropylazanium;chloride Chemical compound [Cl-].CCC[N+](CCC)(CCC)CCC FBEVECUEMUUFKM-UHFFFAOYSA-M 0.000 description 2
- HILRAMQWKMIWCB-UHFFFAOYSA-N tributyl(cyanomethyl)phosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CC#N HILRAMQWKMIWCB-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- FKMJROWWQOJRJX-UHFFFAOYSA-M triphenyl(prop-2-enyl)phosphanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC=C)C1=CC=CC=C1 FKMJROWWQOJRJX-UHFFFAOYSA-M 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ASUDFOJKTJLAIK-UHFFFAOYSA-N 2-methoxyethanamine Chemical compound COCCN ASUDFOJKTJLAIK-UHFFFAOYSA-N 0.000 description 1
- FAXDZWQIWUSWJH-UHFFFAOYSA-N 3-methoxypropan-1-amine Chemical compound COCCCN FAXDZWQIWUSWJH-UHFFFAOYSA-N 0.000 description 1
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229940107816 ammonium iodide Drugs 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- IAOZJIPTCAWIRG-QWRGUYRKSA-N aspartame Chemical compound OC(=O)C[C@H](N)C(=O)N[C@H](C(=O)OC)CC1=CC=CC=C1 IAOZJIPTCAWIRG-QWRGUYRKSA-N 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- FIVJMCNNMIGYRO-UHFFFAOYSA-N bis(2-hydroxyethyl)-dimethylazanium Chemical compound OCC[N+](C)(C)CCO FIVJMCNNMIGYRO-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229940005989 chlorate ion Drugs 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- DVERFJXHCKPMNM-UHFFFAOYSA-N fluorophosphane Chemical group PF DVERFJXHCKPMNM-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000004674 methylcarbonyl group Chemical group CC(=O)* 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- WHHFZOIADLFZRX-NRFANRHFSA-N n-[5-[[7-[(2s)-2-hydroxy-3-piperidin-1-ylpropoxy]-6-methoxyquinazolin-4-yl]amino]pyrimidin-2-yl]benzamide Chemical compound N1=CN=C2C=C(OC[C@@H](O)CN3CCCCC3)C(OC)=CC2=C1NC(C=N1)=CN=C1NC(=O)C1=CC=CC=C1 WHHFZOIADLFZRX-NRFANRHFSA-N 0.000 description 1
- 125000004923 naphthylmethyl group Chemical group C1(=CC=CC2=CC=CC=C12)C* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229940100684 pentylamine Drugs 0.000 description 1
- PMOIAJVKYNVHQE-UHFFFAOYSA-N phosphanium;bromide Chemical group [PH4+].[Br-] PMOIAJVKYNVHQE-UHFFFAOYSA-N 0.000 description 1
- LSMAIBOZUPTNBR-UHFFFAOYSA-N phosphanium;iodide Chemical group [PH4+].[I-] LSMAIBOZUPTNBR-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- OTNVGWMVOULBFZ-UHFFFAOYSA-N sodium;hydrochloride Chemical compound [Na].Cl OTNVGWMVOULBFZ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- MRKAVJXPGLUQKP-UHFFFAOYSA-N tetrakis(2-hydroxyethyl)azanium Chemical compound OCC[N+](CCO)(CCO)CCO MRKAVJXPGLUQKP-UHFFFAOYSA-N 0.000 description 1
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JCHWNYYARSRCKZ-UHFFFAOYSA-M tributyl(cyanomethyl)phosphanium;chloride Chemical compound [Cl-].CCCC[P+](CCCC)(CCCC)CC#N JCHWNYYARSRCKZ-UHFFFAOYSA-M 0.000 description 1
- FVJLCPJDDAGIJE-UHFFFAOYSA-N tris(2-hydroxyethyl)-methylazanium Chemical compound OCC[N+](C)(CCO)CCO FVJLCPJDDAGIJE-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Definitions
- the present invention relates to a chemical solution and a method for treating a substrate.
- Patent Literature 1 discloses an alkaline etching solution used for wet etching, in which a specific concentration of sodium hypochlorite is dissolved in an aqueous sodium hydroxide solution.
- an object of the present invention is to provide a chemical solution having excellent dissolving ability for a transition metal-containing material and realizing excellent smoothness of a portion to be processed, and a method for processing a substrate using the same.
- the present inventors have conducted intensive studies to achieve the above object, and as a result, have found that a chemical solution containing hypochlorous acid and a predetermined amount of anion can solve the above object, and have completed the present invention. That is, the inventors have found that the above problem can be solved by the following configuration.
- a chemical solution used for removing transition metal-containing substances on a substrate contains one or more hypochlorous acids selected from the group consisting of hypochlorous acid and salts thereof, and one or more specific anions selected from the group consisting of ClO 3 ⁇ and Cl ⁇ .
- the chemical solution contains one specific anion, the content of one specific anion is 5% by mass to 1% by mass with respect to the total mass of the chemical solution;
- the chemical solution contains two specific anions, the content of each of the two specific anions is 1% by mass or less based on the total mass of the chemical solution, and at least one of the two specific anions is contained. Is 5 mass ppb or more with respect to the total mass of the chemical solution.
- the chemical solution contains both ClO 3 ⁇ and Cl ⁇ ,
- the drug solution according to [1], wherein the content of ClO 3 ⁇ and the content of Cl ⁇ are 5 mass ppb to 1 mass% with respect to the total mass of the drug solution, respectively.
- the transition metal-containing material is selected from the group consisting of Ru, Rh, Ti, Ta, Co, Cr, Hf, Os, Pt, Ni, Mn, Cu, Zr, Mo, La, W, and Ir.
- [15] The method for treating a substrate according to [13] or [14], wherein the step A is a step A1 described later, a step A2 described later, a step A3 described later, a step A4 described later, or a step A5 described later. .
- [16] The method for treating a substrate according to [15], wherein the step A is the step A1, and the method further includes a step B described below before or after the step A1.
- step A1 and step B are alternately repeated.
- the rinsing liquid is hydrofluoric acid, hydrochloric acid, aqueous hydrogen peroxide, a mixed liquid of hydrofluoric acid and aqueous hydrogen peroxide, a mixed liquid of sulfuric acid and aqueous hydrogen peroxide, or a mixture of aqueous ammonia and aqueous hydrogen peroxide.
- the present invention will be described in detail.
- the description of the constituent elements described below may be made based on typical embodiments of the present invention, but the present invention is not limited to such embodiments.
- the notation of not indicating substituted or unsubstituted includes those having no substituent and those having a substituent within a range not to impair the effects of the present invention. Is what you do.
- the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). This is synonymous with each compound.
- Exposure in the present specification means not only exposure with far ultraviolet rays represented by a mercury lamp and an excimer laser, X-rays, and EUV (Extreme ultraviolette) light, but also electron beams and Exposure includes drawing with a particle beam such as an ion beam.
- a numerical range represented by using “to” means a range including numerical values described before and after “to” as a lower limit and an upper limit.
- a dry etching residue is a by-product generated by performing dry etching (for example, plasma etching), and includes, for example, an organic residue, a Si-containing residue, and a metal derived from a photoresist. Containing residues (for example, transition metal-containing residues).
- the chemical is used to remove transition metal-containing substances on the substrate.
- the chemical solution contains hypochlorous acids and a specific anion.
- the hypochlorous acid is at least one selected from the group consisting of hypochlorous acid and salts thereof.
- the specific anion is at least one selected from the group consisting of ClO 3 ⁇ and Cl ⁇ .
- the content of the one specific anion is 5% by mass to 1% by mass based on the total mass of the chemical solution.
- the chemical solution contains two specific anions
- the content of each of the two specific anions is 1% by mass or less based on the total mass of the chemical solution, and at least one of the two specific anions is used.
- One content is 5 mass ppb or more with respect to the total mass of the drug solution.
- the chemical solution contains hypochlorous acid, thereby achieving excellent solubility in transition metals.
- the content of the specific anion in the chemical solution is equal to or more than a predetermined amount, metal components (metal ions and the like) generated when removing the transition metal-containing substance on the substrate with the chemical solution interact with the specific anion. It is unlikely to remain on the substrate, and the smoothness of the portion to be processed is improved.
- hypochlorous acid is a general term for compounds selected from the group consisting of hypochlorous acid and salts thereof.
- the salts of hypochlorous acid are not particularly limited, and salts of hypochlorous acid and alkali metal elements (such as sodium and potassium), hypochlorous acid and alkaline earth metal elements (such as magnesium and calcium), and And salts of hypochlorous acid and other metal elements.
- hypochlorous acid hypochlorous acid
- sodium hypochlorite NaClO
- potassium hypochlorite NaClO
- calcium hypochlorite Ca (ClO) 2
- Sodium hypochlorite is more preferred because of its excellent solubility in chemicals.
- the content of hypochlorous acid (when a plurality of hypochlorous acids are contained, the total content thereof) is 0.1% by mass or more based on the total mass of the drug solution. Is preferably 0.5% by mass or more, more preferably 1.0% by mass or more, particularly preferably 5.0% by mass or more, and most preferably 15.0% by mass or more. From the viewpoint that the smoothness of the portion to be processed is more excellent, the content of hypochlorous acid is preferably 40.0% by mass or less, more preferably 30.0% by mass or less, based on the total mass of the chemical solution. 0 mass% or less is more preferable.
- the content of hypochlorous acid is preferably 0.1 to 15.0% by mass with respect to the total mass of the chemical solution, from the viewpoint that the solubility of the chemical solution and the smoothness of the portion to be treated are more excellent in balance.
- the content is more preferably from 0.5 to 5.0% by mass.
- the content of hypochlorous acid in the chemical solution can be determined by ion chromatography. As a specific device, for example, Dionex @ ICS-2100 manufactured by Thermo Fisher Co., Ltd. may be mentioned. When the composition of the raw material is known, the content of the hypochlorous acid may be calculated and obtained. When the content of hypochlorous acid in the chemical solution is below the measurement limit, analysis may be performed using a concentrated solution obtained by concentrating the chemical solution.
- the chemical solution contains a specific anion.
- the specific anion is one kind of anion selected from the group consisting of ClO 3 ⁇ (chlorate ion) and Cl ⁇ (chloride ion).
- the specific anion contained in the chemical solution may be one kind or two kinds. In other words, the chemical solution, ClO 3 - and Cl - may contain only one kind selected from, ClO 3 - and Cl - they may also contain a.
- the content of one specific anion is 5% by mass to 1% by mass based on the total mass of the chemical solution.
- predetermined content the content of 5 mass ppb to 1 mass% with respect to the total mass of the drug solution
- predetermined content anion the specific anion present at a predetermined content in the drug solution
- the content of the predetermined content anion is preferably 0.1% by mass or less, and more preferably 0.01% by mass or less based on the total mass of the drug solution. More preferred.
- the content of the predetermined content anion (that is, the predetermined content) is preferably 1 mass ppm or more, more preferably 0.001 mass% or more, based on the total mass of the chemical solution. It is more preferably, more than 0.1% by mass.
- the content of the predetermined amount of anion (that is, the predetermined content) is 1 mass ppm to 0 mass% with respect to the total mass of the chemical solution. 0.1% by mass, more preferably 0.001% by mass to 0.01% by mass.
- the content of each of the two specific anions is 1% by mass or less based on the total mass of the chemical solution (dissolution of the chemical solution). From the viewpoint of better performance, the content is preferably 0.1% by mass or less, more preferably 0.01% by mass or less.
- the content of at least one of the two specific anions is preferably at least 5 mass ppb with respect to the total mass of the chemical solution (preferably at least 1 mass ppm from the viewpoint of more excellent smoothness of the portion to be treated). , More preferably 0.001% by mass or more, and still more preferably more than 0.1% by mass.
- the drug solution contains at least one kind of anion having a predetermined content, and the content of any specific anion does not exceed 1% by mass with respect to the total mass of the drug solution.
- the chemical solution contains two types of specific anions (ClO 3 ⁇ and Cl ⁇ ) from the viewpoint that the smoothness of the portion to be processed is more excellent, and the contents of ClO 3 ⁇ and Cl ⁇ are respectively reduced to the total mass of the chemical solution.
- the content is preferably 5% by mass to 1% by mass.
- the content of at least one of the predetermined content anions is preferably 1 mass ppm to 0.1 mass%, more preferably 0.001 to 0.01 mass%. Is more preferred.
- the contents of the two predetermined content anions may each be within the above range.
- the total content of the specific anions in the chemical solution is more than 5 mass ppb and 2 mass% or less based on the total mass of the chemical solution, and 2 mass ppm to 0.2 mass %, More preferably 0.002 to 0.02% by mass.
- the ratio of the content of hypochlorite (mass ratio), from the viewpoint of dissolving ability of the chemical is more excellent, 5 ⁇ 10 -1 or more preferably, 5 ⁇ 10 0 or more Is more preferable, and 5 ⁇ 10 1 or more is further preferable.
- 1 ⁇ 10 7 or less is preferable, less than 2 ⁇ 10 6 is more preferable, and 1 ⁇ 10 4 or less is more preferable, from the viewpoint that the smoothness of the processed part is more excellent.
- it is preferably 5 ⁇ 10 0 to 1 ⁇ 10 7, more preferably 5 ⁇ 10 1 to 1 ⁇ 10 4 .
- the method of causing the chemical solution to contain the specific anion there is no limitation on the method of causing the chemical solution to contain the specific anion.
- a raw material mainly containing a compound containing the specific anion is added to the solution of hypochlorous acid just before the preparation of the chemical solution or the treatment of the substrate.
- a predetermined amount of the specific anion may be contained in the chemical solution, or a predetermined amount of the specific anion may be contained in the chemical solution by using a raw material containing a trace amount of the specific anion as an impurity or the like for preparing the chemical solution.
- the compound containing a specific anion is not particularly limited, and examples thereof include a compound that dissociates in a solution (preferably an aqueous solution) of hypochlorous acid to generate a specific anion and a cation. More specific compounds include chloric acid (HClO 3 ), hydrochloric acid (HCl), and salts thereof (eg, salts with alkali metals and salts with alkaline earth metals). Sodium (NaClO 3 ), potassium chlorate (KClO 3 ), hydrochloric acid, sodium hydrochloride (NaCl) or potassium hydrochloride (KCl) is preferable, and chloric acid or hydrochloric acid is more preferable.
- chloric acid or hydrochloric acid is more preferable.
- ClO 3 - and Cl - both used in the preparation of drug solution containing, ClO 3 - compounds containing and Cl - as a combination of compounds containing not particularly limited, for example, chloric acid and salts thereof And a combination of one or more selected from hydrochloric acid and a salt thereof, and a combination of chloric acid, sodium chlorate or potassium chlorate, and hydrochloric acid, sodium chloride or potassium hydrochloride.
- a combination of chloric acid and hydrochloric acid is more preferred.
- the specific anion content and the specific cation content described later in the chemical solution can be determined by ion chromatography.
- a specific device for example, Dionex @ ICS-2100 manufactured by Thermo Fisher Co., Ltd. may be mentioned.
- the content of the specific anion may be calculated and obtained.
- the chemical solution may contain other optional components other than those described above. Hereinafter, the optional components will be described.
- the chemical solution may contain one or more specific cations selected from the group consisting of quaternary ammonium cations and quaternary phosphonium cations.
- the chemical solution preferably contains a specific cation, from the viewpoint that the smoothness of the portion to be processed is more excellent.
- the specific cation contained in the chemical solution may be one kind or two or more kinds.
- the chemical solution may contain only one selected from a quaternary ammonium cation and a quaternary phosphonium cation, or may contain both a quaternary ammonium cation and a quaternary phosphonium cation. Good.
- the chemical solution may contain two or more quaternary ammonium cations, or may contain two or more quaternary phosphonium cations.
- the method for causing the chemical solution to contain the specific cation there is no limitation on the method for causing the chemical solution to contain the specific cation.
- a quaternary ammonium compound and a compound selected from quaternary ammonium compounds described below are added to the chemical solution when preparing the chemical solution or immediately before processing the substrate. I just need.
- the quaternary ammonium cation is not particularly limited as long as it is a cation in which a nitrogen atom is substituted with four hydrocarbon groups, but a cation represented by the following formula (1) is preferable.
- R 4A to R 4D each independently represent an alkyl group, a hydroxyalkyl group, a benzyl group, or an aryl group.
- alkyl group an alkyl group having 1 to 6 carbon atoms is preferable, and a methyl group, an ethyl group, a propyl group, or a butyl group is more preferable.
- hydroxyalkyl group a hydroxyalkyl group having 1 to 6 carbon atoms is preferable, and a hydroxymethyl group, a hydroxyethyl group, a hydroxypropyl group, or a hydroxybutyl group is more preferable.
- aryl group a phenyl group or a naphthyl group is preferable, and a phenyl group is more preferable.
- an alkyl group having 1 to 6 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms or a benzyl group is preferable, and a methyl group, an ethyl group, a propyl group, and a butyl group are preferable.
- a group or a hydroxyethyl group is more preferred, and a methyl group or an ethyl group is even more preferred.
- Examples of the cation represented by the formula (1) include a tetramethylammonium cation, a tetraethylammonium cation, an ethyltrimethylammonium cation, a tetrabutylammonium cation, a trimethyl (2-hydroxyethyl) ammonium cation, and a dimethyldi (2-hydroxyethyl) ammonium cation , A methyltri (2-hydroxyethyl) ammonium cation, a tetra (2-hydroxyethyl) ammonium cation, or a trimethylbenzylammonium cation is preferable, and a tetramethylammonium cation, a tetraethylammonium cation, an ethyltrimethylammonium cation, or a tetrabutylammonium cation Is more preferred. Further, as the cation represented by the formula (1)
- the quaternary ammonium compound to be added to the chemical solution to make the chemical solution contain a quaternary ammonium cation contains the above-described quaternary ammonium cation and dissociates in a hypochlorous acid solution (preferably an aqueous solution).
- a hypochlorous acid solution preferably an aqueous solution.
- the quaternary ammonium compound include quaternary ammonium hydroxide, quaternary ammonium fluoride, quaternary ammonium chloride, quaternary ammonium bromide, quaternary ammonium iodide, and quaternary ammonium.
- Acetates and carbonates of quaternary ammonium can be mentioned, and quaternary ammonium hydroxide or quaternary ammonium chloride is preferred, and quaternary ammonium hydroxide is more preferred.
- a compound containing a cation represented by the formula (1) and a hydroxide ion is preferable, and tetramethylammonium hydroxide (TMAH) and tetraethylammonium hydroxide (TEAH) , Ethyltrimethylammonium hydroxide (ETMAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), trimethyl (2-hydroxyethyl) ammonium hydroxide (choline), dimethyldi (2- (Hydroxyethyl) ammonium hydroxide, methyltri (2-hydroxyethyl) ammonium hydroxide, tetra (2-hydroxyethyl) ammonium hydroxide or trimethylbenzylammonium hydroxide is more preferable, and TMAH, TEAH, ETMAH is preferable.
- TPAH or, more preferably TBAH.
- quaternary ammonium compound other than the quaternary ammonium hydroxide a compound in which the hydroxide ion (OH ⁇ ) of the preferred quaternary ammonium hydroxide described above is replaced with a corresponding anion is preferable.
- quaternary ammonium chloride a compound obtained by replacing the hydroxide ion (OH ⁇ ) of the preferred quaternary ammonium hydroxide with a chloride ion (Cl ⁇ ) is preferable, and tetramethylammonium chloride, tetraethylammonium Chloride, ethyltrimethylammonium chloride, tetrapropylammonium chloride or tetrabutylammonium chloride is more preferred.
- the quaternary phosphonium cation is not particularly limited as long as it is a cation in which a phosphorus atom is substituted with four hydrocarbon groups, but a cation represented by the following formula (2) is preferable.
- R 1 , R 2 , R 3 , and R 4 each independently represent a hydrocarbon group having 1 to 18 carbon atoms which may have a substituent.
- the hydrocarbon group examples include an aliphatic hydrocarbon group, an aromatic hydrocarbon group, and a hydrocarbon group that is a combination of an aliphatic hydrocarbon group and an aromatic hydrocarbon group.
- the aliphatic hydrocarbon group having 2 or more carbon atoms may have an unsaturated bond.
- an alkyl group having 1 to 10 carbon atoms more preferably, an alkyl group having 1 to 4 carbon atoms
- a phenyl group, a naphthyl group, a benzyl group, or a naphthylmethyl group is preferable.
- substituent of the hydrocarbon group examples include an alkyl (preferably alkyl having 1 to 6 carbon atoms) carbonyl group, a formyl group, an alkoxy group (preferably an alkoxy group having 1 to 6 carbon atoms), a halogen atom and a cyano group.
- a silyl group preferably a methylcarbonyl group, a formyl group, a methoxy group, an ethoxy group, a chlorine atom, or a cyano group.
- at least one of R 1 , R 2 , R 3 , and R 4 is preferably an alkyl group having 4 to 10 carbon atoms or a phenyl group, more preferably a phenyl group. preferable.
- Examples of the quaternary phosphonium cation include acetonyltriphenylphosphonium cation, allyltriphenylphosphonium cation, benzyltriphenylphosphonium cation, trans-2-butene-1,4-bis (triphenylphosphonium cation), (4- (Chlorobenzyl) triphenylphosphonium cation, (2-chlorobenzyl) triphenylphosphonium cation, (chloromethyl) triphenylphosphonium cation, (cyanomethyl) triphenylphosphonium cation, (2,4-dichlorobenzyl) triphenylphosphonium cation, (Formylmethyl) triphenylphosphonium cation, (methoxymethyl) triphenylphosphonium cation, (1-naphthylmethyl) triphenylphosphonium Cation, tetrabutylphosphonium cation, tetra
- an acetonyltriphenylphosphonium cation, an allyltriphenylphosphonium cation, a benzyltriphenylphosphonium cation, a tetrabutylphosphonium cation, a tetraphenylphosphonium cation, or a tributyl (cyanomethyl) phosphonium cation is preferable.
- a triphenylphosphonium cation, a benzyltriphenylphosphonium cation, a tetrabutylphosphonium cation, or a tetraphenylphosphonium cation is more preferred.
- the quaternary phosphonium compound to be added to the chemical solution to contain the quaternary phosphonium cation in the chemical solution contains the quaternary phosphonium cation described above and dissociates in a hypochlorous acid solution (preferably an aqueous solution).
- a hypochlorous acid solution preferably an aqueous solution.
- the compound generates a quaternary phosphonium cation.
- Examples of the quaternary phosphonium compound include quaternary phosphonium hydroxide, quaternary phosphonium fluoride, quaternary phosphonium chloride, quaternary phosphonium bromide, quaternary phosphonium iodide, and quaternary phosphonium.
- quaternary phosphonium hydroxide or quaternary phosphonium chloride is preferred, and quaternary phosphonium chloride is more preferred.
- quaternary phosphonium chloride a compound containing a cation represented by the formula (2) and a chloride ion (Cl ⁇ ) is preferable, and acetonyltriphenylphosphonium chloride, allyltriphenylphosphonium chloride, benzyltriphenyl Phosphonium chloride, tetrabutylphosphonium chloride, tetraphenylphosphonium chloride, or tributyl (cyanomethyl) phosphonium chloride is more preferable, and acetonyltriphenylphosphonium chloride, allyltriphenylphosphonium chloride, benzyltriphenylphosphonium chloride, tetrabutylphosphonium chloride,
- the specific cation may be any of a quaternary ammonium cation and a quaternary phosphonium cation, but the chemical solution preferably contains at least a quaternary ammonium cation as the specific cation.
- the content of the specific cation in the chemical solution (total content when a plurality of specific cations are contained. The same applies hereinafter) is 1 ppm by mass with respect to the total mass of the chemical solution because the smoothness of the portion to be treated is more excellent.
- the content is preferably at least 0.001% by mass, more preferably at least 0.005% by mass.
- the upper limit is not particularly limited, but is preferably 1% by mass or less, more preferably 0.5% by mass or less based on the total mass of the drug solution, from the viewpoint that the solubility of the drug solution is more excellent.
- the ratio (mass ratio) of the content of hypochlorous acid to the content of the specific cation in the drug solution is preferably 1 ⁇ 10 ⁇ 2 or more, more preferably 1 ⁇ 10 ⁇ 1 or more, from the viewpoint that the solubility of the drug solution is more excellent. Is more preferred. Further, the ratio (mass ratio) of the content of the hypochlorous acid to the content of the specific cation is preferably 1 ⁇ 10 5 or less, more preferably 1 ⁇ 10 4 or less, from the viewpoint of being superior to the smoothness of the portion to be treated. It is preferably 2 ⁇ 10 2 or less.
- the chemical solution may contain a pH adjuster.
- the pH adjuster include an inorganic acid, an organic acid, an organic base, and an inorganic base.
- the type of the pH adjuster to be used may be appropriately selected and the content of the pH adjuster may be adjusted so that the pH of the chemical solution falls within a preferable range described below.
- One type of pH adjuster may be used alone, or two or more types may be used.
- the inorganic acid and the organic acid include sulfuric acid, acetic acid, nitric acid, phosphoric acid, and hydrofluoric acid.
- sulfuric acid, nitric acid, or hydrofluoric acid is preferable, and sulfuric acid is more preferable.
- sulfuric acid, acetic acid, nitric acid, phosphoric acid, and hydrofluoric acid are intended to be aqueous solutions in which H 2 SO 4 , CH 3 COOH, HNO 3 , H 3 PO 4 , and HF are dissolved in water, respectively.
- the organic base and the inorganic base include aqueous ammonia, a water-soluble amine, an alkali metal hydroxide, and an alkaline earth metal hydroxide.
- the chemical solution may contain the above-mentioned quaternary ammonium hydroxide as an organic base.
- the quaternary ammonium hydroxide when the chemical solution contains a quaternary ammonium hydroxide, the quaternary ammonium hydroxide has both a function as a supply source of the specific cation and a function as a pH adjuster.
- a water-soluble amine intends an amine that can be dissolved in 50 g or more of 1 L of water. Ammonia water is not included as a water-soluble amine.
- the water-soluble amine include diglycolamine (DGA), methylamine, ethylamine, propylamine, butylamine, pentylamine, ethanolamine, propanolamine, butanolamine, methoxyethylamine, methoxypropylamine, dimethylamine, diethylamine, and diamine. Examples include propylamine, trimethylamine, and triethylamine. Unsubstituted hydroxylamine and hydroxylamine derivatives may be used as the water-soluble amine.
- alkali metal hydroxide and the alkaline earth metal hydroxide examples include lithium hydroxide, sodium hydroxide, potassium hydroxide, and calcium hydroxide.
- an organic base or an inorganic base is used as the pH adjuster, a quaternary ammonium hydroxide is used because it hardly affects the electrical characteristics of the semiconductor device and has low reactivity with hypochlorous acids.
- a water-soluble amine is preferred.
- the chemical solution may contain a solvent.
- the solvent include water and an organic solvent, and water is preferable.
- Water may contain unavoidable trace mixing components. Above all, purified water such as distilled water, ion-exchanged water, or ultrapure water is preferable, and ultrapure water used for semiconductor production is more preferable.
- the concentration of water in the drug solution is not particularly limited, but is preferably 60% by mass or more, more preferably 70% by mass or more, and even more preferably 97% by mass or more.
- the upper limit is not particularly limited, but is preferably 99.9% by mass or less, more preferably 99% by mass or less.
- the chemical solution may contain components (other components) other than the above-described components.
- Other components are not particularly limited, and include known components.
- Each surfactant is mentioned.
- Each of the additives disclosed in paragraphs 0017 to 0038 of JP-A-2014-107434, paragraphs 0033 to 0047 of JP-A-2014-103179, paragraphs 0017 to 0049 of JP-A-2014-93407, and the like Anticorrosives and the like).
- the pH of the chemical is not particularly limited, and is, for example, 13.0 or less. Above all, 10.0 or less is preferable, more than 7.0 and less than 9.0 is more preferable, and 7.5 to 8.5 is more preferable from the viewpoint that the dissolving ability of the chemical solution and the smoothness of the portion to be treated are more excellently balanced. . That is, when the drug solution contains a pH adjuster, the content of the pH adjuster is preferably such that the pH of the drug solution falls within the above range.
- the pH of the chemical is a value measured by a pH meter (F-71S (product number), manufactured by Horiba, Ltd.) at room temperature (25 ° C.).
- the method for preparing the chemical solution is not particularly limited, and examples include a method of sufficiently mixing predetermined raw materials using a stirrer such as a mixing mixer.
- the preparation method include a method of adjusting the pH to a set pH in advance and then mixing, or a method of adjusting the pH to the set pH after mixing.
- the concentrated solution can be used after being diluted and adjusted to a set pH.
- a set amount of water for dilution can be added to the concentrate, or a predetermined amount of concentrate can be added to the water for dilution.
- the chemical is used to remove transition metal-containing substances on the substrate.
- “on the substrate” includes, for example, any of the front and back surfaces, the side surfaces, and the inside of the groove of the substrate.
- the transition metal-containing material on the substrate includes not only a case where the transition metal-containing material is directly on the surface of the substrate but also a case where the transition metal-containing material is present on the substrate via another layer.
- the transition metal contained in the transition metal-containing material is, for example, Ru (ruthenium), Rh (rhodium), Ti (titanium), Ta (tantalum), Co (cobalt), Cr (chromium), Hf (hafnium), Os (Osmium), Pt (platinum), Ni (nickel), Mn (manganese), Cu (copper), Zr (zirconium), Mo (molybdenum), La (lanthanum), W (tungsten), and Ir (iridium) Metal M selected from the following. That is, as the transition metal-containing material, a metal M-containing material is preferable. Among them, the transition metal-containing material is more preferably a Ru-containing material.
- the chemical is more preferably used for removing Ru-containing substances.
- the content of Ru atoms in the Ru-containing material is preferably 10% by mass or more, more preferably 30% by mass or more, still more preferably 50% by mass or more, and preferably 90% by mass or more based on the total mass of the Ru-containing material. Particularly preferred.
- the upper limit is not particularly limited, and may be 100% by mass.
- the transition metal-containing material only needs to be a substance containing a transition metal (transition metal atom), for example, a simple substance of a transition metal, an alloy containing a transition metal, an oxide of a transition metal, a nitride of a transition metal, And transition metal oxynitrides.
- the transition metal-containing material is preferably a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an oxynitride of Ru.
- the oxide, the nitride, and the oxynitride may be a composite oxide, a composite nitride, and a composite oxynitride containing a transition metal.
- the content of the transition metal atom in the transition metal-containing material is preferably 10% by mass or more, more preferably 30% by mass or more, even more preferably 50% by mass or more based on the total mass of the transition metal-containing material.
- the upper limit is 100% by mass because the transition metal-containing substance may be the transition metal itself.
- the object to be processed is a substrate having a transition metal-containing material. That is, the workpiece includes at least the substrate and the transition metal-containing material on the substrate.
- the type of the substrate is not particularly limited, but a semiconductor substrate is preferable.
- the substrate includes a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk.
- Various substrates such as a substrate may be used.
- Materials constituting the semiconductor substrate include silicon, silicon germanium, and Group III-V compounds such as GaAs, and any combination thereof.
- DRAM Dynamic Random Access Memory
- FRAM Finkoresistive Random Access Memory
- MRAM Magnetic Random Access Memory
- PRAM Phase ⁇ change ⁇ Random ⁇ Access ⁇ Memory
- the type of the transition metal-containing substance on the substrate is as described above.
- the form of the transition metal-containing material on the substrate is not particularly limited.
- the form arranged in a film (transition metal-containing film), the form arranged in a wiring (transition metal-containing wiring), and the form of particles Any of the arranged forms may be used.
- Ru is preferable as the transition metal, and the object to be processed contains a substrate and a Ru-containing film, a Ru-containing wiring, or a particulate Ru-containing material disposed on the substrate. Is preferred.
- the transition metal-containing material in the form of particles, for example, as described later, after performing dry etching on the substrate on which the transition metal-containing film is arranged, the transition metal in After performing CMP (chemical mechanical polishing) on the substrate to which the inclusions are attached and the transition metal-containing film, particulate transition metal-containing substances are attached as residues.
- the thickness of the transition metal-containing film is not particularly limited and may be appropriately selected depending on the application. For example, the thickness is preferably 50 nm or less, more preferably 20 nm or less, and still more preferably 10 nm or less.
- the transition metal-containing film may be disposed only on one main surface of the substrate, or may be disposed on both main surfaces. Further, the transition metal-containing film may be disposed on the entire main surface of the substrate, or may be disposed on a part of the main surface of the substrate.
- the object to be treated may contain various layers and / or structures as desired in addition to the transition metal-containing material.
- a metal wiring, a gate electrode, a source electrode, a drain electrode, an insulating layer, a ferromagnetic layer, and / or a nonmagnetic layer may be provided over a substrate.
- the substrate may contain interconnect features such as exposed integrated circuit structures, such as metal interconnects and dielectric materials.
- Metals and alloys used for the interconnect mechanism include, for example, aluminum, copper-aluminum alloy, copper, titanium, tantalum, cobalt, silicon, titanium nitride, tantalum nitride, and tungsten.
- the substrate may contain a layer of silicon oxide, silicon nitride, silicon carbide, and / or carbon-doped silicon oxide.
- the size, thickness, shape, layer structure, and the like of the substrate are not particularly limited and can be appropriately selected as desired.
- the object to be processed used in the processing method of the present invention has a transition metal-containing substance on a substrate as described above.
- the method for manufacturing the object to be processed is not particularly limited.
- a transition metal-containing film can be formed on a substrate by a sputtering method, a chemical vapor deposition (CVD) method, a molecular beam epitaxy (MBE) method, or the like.
- CVD chemical vapor deposition
- MBE molecular beam epitaxy
- the above method may be performed through a predetermined mask to form a transition metal-containing wiring on the substrate.
- a substrate on which a transition metal-containing film or a transition metal-containing wiring is disposed and which has been subjected to a predetermined process may be used as an object to be processed in the processing method.
- a substrate having a transition metal-containing film or a transition metal-containing wiring may be subjected to dry etching to manufacture a substrate having a dry etching residue containing a transition metal.
- the substrate on which the transition metal-containing film or the transition metal-containing wiring is arranged may be subjected to CMP to manufacture a substrate having a transition metal-containing material.
- the substrate processing method includes a step A of removing the transition metal-containing material on the substrate by using the above-described chemical solution. As described above, it is preferable to apply this treatment method when the transition metal-containing material contains a Ru-containing material.
- the chemical used in this treatment method is as described above. Further, the substrate containing the transition metal-containing material, which is the object to be treated in the present treatment method, is as described above.
- a method in which a chemical solution is brought into contact with a substrate on which a transition metal-containing substance as an object to be treated is arranged is exemplified.
- the method of contacting is not particularly limited, for example, a method of immersing an object in a chemical solution placed in a tank, a method of spraying a chemical solution on an object to be processed, a method of flowing a chemical solution on an object to be processed, and the like. And any combination of the above. Above all, a method of immersing the object to be treated in a chemical solution is preferable.
- a mechanical stirring method may be used to further enhance the cleaning ability of the chemical solution.
- the mechanical stirring method include a method of circulating a chemical solution on an object to be processed, a method of flowing or spraying a chemical solution on an object to be processed, and a method of stirring a chemical solution by ultrasonic waves or megasonics. No.
- the processing time of the step A can be appropriately adjusted.
- the treatment time contact time between the chemical solution and the object to be treated
- the temperature of the chemical solution during the treatment is not particularly limited, but is preferably from 20 to 75 ° C, more preferably from 20 to 60 ° C, even more preferably from 40 to 65 ° C.
- Especially preferred is 50 to 65 ° C.
- a process of adding a solvent (preferably water) to the chemical solution while measuring the concentration of hypochlorous acid and / or the specific anion in the chemical solution is performed. Good. By performing this processing, the component concentration in the chemical solution can be stably maintained in a predetermined range.
- Step A2 of removing the transition metal-containing film Step A3 of removing the transition metal-containing substance adhering to the back surface of the substrate on which the transition metal-containing film is disposed using a chemical solution
- Step A4 of removing a metal-containing substance or step A5 of removing a transition metal-containing substance on a substrate after a chemical mechanical polishing treatment using a chemical solution is exemplified.
- the step A is more preferably the step A2 or the step A3.
- the present processing method used for each of the above processes will be described.
- the step A includes a step A1 of performing a recess etching process on a transition metal-containing wiring disposed on a substrate using a chemical solution.
- FIG. 1 is a schematic diagram of an upper cross section showing an example of a substrate (hereinafter, also referred to as a “wiring substrate”) containing a transition metal-containing wiring which is an object to be processed in the recess etching process in step A1.
- the wiring substrate 10a shown in FIG. 1 includes a substrate (not shown), an insulating film 12 containing a groove disposed on the substrate, a barrier metal layer 14 disposed along the inner wall of the groove, and a filling inside the groove. And a transition metal-containing wiring 16.
- the board and the transition metal-containing wiring in the wiring board are as described above.
- a Ru-containing wiring (a wiring containing Ru) is preferable.
- the Ru-containing wiring preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an oxynitride of Ru.
- the material constituting the barrier metal layer in the wiring board is not particularly limited, and includes, for example, TiN and TaN. In FIG. 1, the embodiment in which the wiring board contains a barrier metal layer is described, but a wiring board that does not contain a barrier metal layer may be used.
- the method for manufacturing the wiring board is not particularly limited. For example, a step of forming an insulating film on the substrate, a step of forming a groove in the insulating film, a step of forming a barrier metal layer on the insulating film, And a step of performing a flattening process on the transition metal-containing film.
- a recess is formed by performing a recess etching process on the transition metal-containing wiring in the wiring board using the above-described chemical solution, thereby removing a part of the upper transition metal-containing wiring. it can. More specifically, when the step A1 is performed, as shown in the wiring board 10b of FIG. 2, a part of the barrier metal layer 14 and the transition metal-containing wiring 16 is removed, and the concave portion 18 is formed.
- step A1 there is a method of bringing a chemical solution into contact with a wiring board.
- the method of contacting the chemical with the wiring board is as described above.
- the preferred ranges of the contact time between the chemical and the wiring board and the temperature of the chemical are as described above.
- Step B Before the step A1 or after the step A1, if necessary, a step B of treating the substrate obtained in the step A1 using a predetermined solution (hereinafter also referred to as a “specific solution”) is performed. May be.
- a predetermined solution hereinafter also referred to as a “specific solution”.
- the specific solution is preferably a solution having poor solubility in the transition metal-containing wiring and having excellent solubility in the material constituting the barrier metal layer.
- a mixed solution of hydrofluoric acid and hydrogen peroxide solution FPM
- a mixed solution of sulfuric acid and hydrogen peroxide solution SPM
- a mixed solution of ammonia water and hydrogen peroxide solution APM
- composition ratios are as follows: 49 mass% hydrofluoric acid for hydrofluoric acid, 98 mass% sulfuric acid for sulfuric acid, 28 mass% ammonia water for ammonia water, 37 mass% hydrochloric acid for hydrochloric acid, and 31 mass% for hydrogen peroxide water. % Hydrogen peroxide solution is intended.
- SPM, APM, or HPM is preferable from the viewpoint of the solubility of the barrier metal layer.
- APM, HPM, or FPM is preferable, and APM is more preferable.
- APM or HPM is preferred from the viewpoint that the performance is excellent in a well-balanced manner.
- a method of contacting the specific solution with the substrate obtained in the step A1 is preferable.
- the method for bringing the specific solution into contact with the substrate obtained in step A1 is not particularly limited, and includes, for example, the same method as that for bringing a chemical solution into contact with the substrate.
- the contact time between the specific solution and the substrate obtained in step A1 is, for example, preferably from 0.25 to 10 minutes, more preferably from 0.5 to 5 minutes.
- the step A1 and the step B may be alternately and repeatedly performed.
- step A1 and step B are each performed 1 to 10 times.
- the first step and the last step may be either the step A1 or the step B.
- the step A includes a step A2 of removing the transition metal-containing film at the outer edge of the substrate on which the transition metal-containing film is disposed using a chemical solution.
- FIG. 3 is a schematic view (top view) illustrating an example of a substrate on which a transition metal-containing film that is an object to be processed in step A2 is arranged.
- the object 20 to be processed in the step A2 shown in FIG. 3 is a laminate including the substrate 22 and the transition metal-containing film 24 disposed on one main surface of the substrate 22 (entire region surrounded by a solid line). is there.
- the transition metal-containing film 24 located at the outer edge portion 26 (the area outside the broken line) of the processing target object 20 is removed.
- the substrate and the transition metal-containing film in the object are as described above.
- a Ru-containing film (a film containing Ru) is preferable.
- the Ru-containing film preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an oxynitride of Ru.
- step A2 is not particularly limited, and includes, for example, a method of supplying a chemical solution from a nozzle such that the chemical solution contacts only the transition metal-containing film on the outer edge of the substrate.
- a substrate processing apparatus and a substrate described in JP-A-2010-267690, JP-A-2008-80288, JP-A-2006-100368, and JP-A-2002-299305 are described.
- a treatment method can be preferably applied.
- the method for contacting the chemical with the object is as described above.
- the preferred ranges of the contact time between the chemical and the object and the temperature of the chemical are as described above.
- the step A includes a step A3 of removing a transition metal-containing substance adhering to the back surface of the substrate on which the transition metal-containing film is disposed by using a chemical solution.
- the object to be processed in step A3 includes the object to be processed used in step A2.
- the transition metal-containing film is formed by sputtering, CVD, or the like. At that time, the transition metal-containing substance may adhere to the surface (on the back surface) of the substrate opposite to the transition metal-containing film side.
- Step A3 is performed to remove such transition metal-containing substances in the object.
- the specific method of the step A3 is not particularly limited, and for example, a method of spraying a chemical solution so that the chemical solution contacts only the back surface of the substrate.
- the method for contacting the chemical with the object is as described above.
- the preferred ranges of the contact time between the chemical and the object and the temperature of the chemical are as described above.
- the step A includes a step A4 of removing a transition metal-containing substance on the substrate after the dry etching using a chemical solution.
- FIG. 4 is a schematic diagram illustrating an example of the object to be processed in step A4.
- the workpiece 30 shown in FIG. 4 is provided with a transition metal-containing film 34, an etching stop layer 36, an interlayer insulating film 38, and a metal hard mask 40 on a substrate 32 in this order.
- a hole 42 exposing the transition metal-containing film 34 is formed. That is, the object shown in FIG. 4 includes the substrate 32, the transition metal-containing film 34, the etching stop layer 36, the interlayer insulating film 38, and the metal hard mask 40 in this order.
- the laminate has a hole 42 penetrating from the surface to the surface of the transition metal-containing film 34.
- the inner wall 44 of the hole 42 is composed of a sectional wall 44a composed of the etching stop layer 36, the interlayer insulating film 38 and the metal hard mask 40, and a bottom wall 44b composed of the exposed transition metal-containing film 34. Is attached.
- the dry etching residue contains a transition metal-containing material.
- a Ru-containing film (a film containing Ru) is preferable.
- the Ru-containing film preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an oxynitride of Ru.
- a Ru-containing material is preferable.
- the Ru-containing material preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an oxynitride of Ru.
- Known materials are selected for the interlayer insulating film and the metal hard mask. In FIG. 4, an embodiment using a metal hard mask is described, but a resist mask formed using a known photoresist material may be used.
- a method of contacting a chemical solution with the object to be treated is exemplified.
- the method of contacting the chemical with the wiring board is as described above.
- the preferred ranges of the contact time between the chemical and the wiring board and the temperature of the chemical are as described above.
- the step A includes a step A5 of removing a transition metal-containing substance on a substrate after a chemical mechanical polishing (CMP) using a chemical solution.
- CMP chemical mechanical polishing
- the substrate to be processed in step A5 includes a substrate containing a transition metal-containing material after CMP.
- a Ru-containing material is preferable.
- the Ru-containing material preferably contains a simple substance of Ru, an alloy of Ru, an oxide of Ru, a nitride of Ru, or an oxynitride of Ru.
- This processing step may include, after the above-described step A, a step C of performing a rinsing treatment on the substrate obtained in step A using a rinsing liquid, if necessary.
- a chemical solution is brought into contact with a substrate, a chlorine compound derived from hypochlorous acid in the chemical solution may adhere to the surface of the substrate as residual chlorine (Cl remaining).
- residual chlorine (Cl residue) may adversely affect subsequent processes and / or end products.
- residual chlorine (Cl remaining) can be removed from the surface of the substrate.
- the rinsing liquid examples include hydrofluoric acid (preferably 0.001 to 1% by mass hydrofluoric acid), hydrochloric acid (preferably 0.001 to 1% by mass hydrochloric acid), and hydrogen peroxide solution (preferably 0.5 to 31% by mass).
- Hydrogen peroxide more preferably 3 to 15% by mass of hydrogen peroxide
- a mixture of hydrofluoric acid and hydrogen peroxide (FPM) a mixture of sulfuric acid and hydrogen peroxide (SPM), ammonia
- a liquid mixture of water and hydrogen peroxide (APM) a mixture of hydrochloric acid and hydrogen peroxide (HPM), carbon dioxide water (preferably 10 to 60 ppm by mass carbon dioxide water), ozone water (preferably 10 ⁇ 60 mass ppm ozone water), hydrogen water (preferably 10-20 mass ppm hydrogen water), citric acid aqueous solution (preferably 0.01-10 mass% citric acid aqueous solution), acetic acid (preferably acetic acid stock solution or 0.1% by mass).
- acetic acid Solution 01-10% by mass acetic acid Solution
- sulfuric acid preferably 1 to 10% by weight sulfuric acid aqueous solution
- aqueous ammonia preferably 0.01 to 10% by weight aqueous ammonia
- isopropyl alcohol IPA
- aqueous solution of hypochlorous acid preferably 1 to 10% by weight
- Hypochlorous acid aqueous solution and aqua regia (preferably in a ratio of "2.6: 1.4" to "3.4: 0.6" as a volume ratio of "37% by mass hydrochloric acid: 60% by mass nitric acid”).
- nitric acid preferably 0.001-1% by mass nitric acid
- perchloric acid preferably 0.001-1% by mass perchloric acid
- oxalic acid aqueous solution preferably 0.1-1% by mass perchloric acid.
- Aqueous solution of periodic acid preferably an aqueous solution of periodic acid, preferably 0.5 to 10% by weight of periodic acid. Examples of periodic acid include orthoperiodic acid and metaperiodic acid). preferable.
- Preferred conditions for FPM, SPM, APM, and HPM are, for example, the same as the preferred conditions for FPM, SPM, APM, and HPM used as the specific solution described above.
- hydrofluoric acid, nitric acid, perchloric acid, and hydrochloric acid mean aqueous solutions in which HF, HNO 3 , HClO 4 , and HCl are dissolved in water, respectively.
- Ozone water, carbon dioxide water, and hydrogen water intend an aqueous solution in which O 3 , CO 2 , and H 2 are dissolved in water, respectively.
- rinsing liquid carbon dioxide water, ozone water, hydrogen water, hydrofluoric acid, citric acid solution, hydrochloric acid, sulfuric acid, ammonia water, hydrogen peroxide Water, SPM, APM, HPM, IPA, hypochlorous acid aqueous solution, aqua regia, or FPM is preferable, and hydrofluoric acid, hydrochloric acid, hydrogen peroxide, SPM, APM, HPM, or FPM is more preferable.
- step C there is a method of contacting the rinse liquid with the substrate obtained in the step A, which is an object to be processed.
- the method of contacting is carried out by a method of immersing the substrate in a rinsing liquid put in a tank, a method of spraying a rinsing liquid on a substrate, a method of flowing a rinsing liquid on a substrate, or a method of any combination thereof.
- the treatment time (the contact time between the rinsing liquid and the object to be treated) is not particularly limited, and is, for example, 5 seconds to 5 minutes.
- the temperature of the rinsing liquid during the treatment is not particularly limited, but is generally preferably from 16 to 60 ° C, more preferably from 18 to 40 ° C. When SPM is used as the rinsing liquid, the temperature is preferably 90 to 250 ° C.
- the present processing method may include a step D of performing a drying treatment after the step C, if necessary.
- the method of the drying treatment is not particularly limited. Spin drying, flow of a drying gas on the substrate, heating of the substrate by a heating means such as a hot plate or an infrared lamp, IPA (isopropyl alcohol) vapor drying, Marangoni drying, Rotagoni drying, and And combinations thereof. Drying times vary depending on the particular method used, but are typically on the order of 30 seconds to several minutes.
- the present processing method may be implemented in combination before or after other steps performed on the substrate.
- the present method may be incorporated in other steps while the present method is being carried out, or the present method may be incorporated in other steps.
- Other processes include, for example, a process of forming each structure such as a metal wiring, a gate structure, a source structure, a drain structure, an insulating layer, a ferromagnetic layer and / or a nonmagnetic layer (layer formation, etching, chemical mechanical polishing, denaturation, Etc.), a resist formation step, an exposure step and a removal step, a heat treatment step, a cleaning step, an inspection step and the like.
- BEOL Back end of the line
- FOL Front end of the line
- a source of a specific anion and a pH adjuster were further added to prepare a chemical solution having the composition shown in Table 1 below.
- Table 1 the hypochlorous acid used in the preparation of the chemical solution, the compound used as the source of the specific anion and / or the specific cation, and the pH adjuster are shown.
- the raw materials used for preparing the chemical solution were all semiconductor-grade high-purity raw materials.
- HClO 3 chloric acid NaClO 3 : sodium chlorate KClO 3 : potassium chlorate HCl: hydrochloric acid NaCl: sodium chloride KCl: potassium chloride N (CH 3 ) 4 Cl: tetramethylammonium chloride N (C 2 H 5 ) 4 Cl: tetraethylammonium chloride N (C 2 H 5) ( CH 3) 3 Cl: ethyl trimethylammonium chloride N (C 3 H 7) 4 Cl: tetrapropylammonium chloride P (C 6 H 5) 4 Cl: tetraphenylphosphonium chloride
- PH adjuster Sulfuric acid (95% by mass sulfuric acid) Nitric acid (60% by mass nitric acid) Hydrofluoric acid (49 mass% hydrofluoric acid)
- TMAH Tetramethylammonium hydroxide
- TEAH Tetraethylammonium hydroxide
- ETMAH Ethyltrimethylammonium hydroxide
- TBAH Tetrabutylammonium hydroxide
- the addition amount of the specific cation supply source is an amount at which the content of the specific cation with respect to the total mass of the drug solution becomes a value described in the “content” column of the “specific cation” column, The addition amount was an amount at which the chemical solution had the pH shown in the column of “pH of chemical solution”.
- the pH adjuster also serves as the supply source of the specific cation
- the content of the specific cation contained in the drug solution after the addition of the pH adjuster is shown in the “content” column of the “specific cation” column.
- Other than the components described in the table (remainder) is water.
- A The surface of the ruthenium layer is smooth and has no roughness.
- B The surface of the ruthenium layer is smooth and has almost no roughness.
- C The surface of the ruthenium layer is smooth and has some roughness (more roughness than B).
- D The surface of the ruthenium layer is rough but at an acceptable level.
- E The surface of the ruthenium layer is rough.
- Table 1 shows the results.
- E + n (n is an integer)” and “En (n is an integer)” mean “ ⁇ 10 + n ” and “ ⁇ 10 ⁇ n ”, respectively.
- the column of “hypochlorous acid / specific anion” indicates the content of hypochlorous acid relative to the content of the specific anion in the chemical solution (or the total content of the chemical solution if it contains both ClO 3 ⁇ and Cl ⁇ ).
- the column of “hypochlorous acid / specific cation” means the mass ratio of the content of hypochlorous acid to the content of specific cation in the chemical solution.
- the chemical solution of the present invention has excellent dissolving ability for transition metal-containing substances and can realize excellent smoothness of a portion to be treated.
- the content (total content) of hypochlorous acids is preferably 5.0% by mass or more, more preferably 15.0% by mass or more based on the total mass of the drug solution. It was confirmed to be preferable (comparison of Examples 2 to 5, comparison of Examples 14 to 17, and comparison of Examples 31 to 34). It was confirmed that the content of hypochlorous acid is preferably 15.0% by mass or less with respect to the total mass of the chemical solution from the viewpoint that the smoothness of the portion to be treated is more excellent (see Examples 4 to 5). Comparison, Comparison of Examples 16-17, Comparison of Examples 33-34).
- the content of one specific anion is preferably 0.1% by mass or less based on the total mass of the drug solution ( Comparison of Examples 1 and 2 and Comparison of Examples 13 and 14), when the chemical solution contains two specific anions, the content of each of the two specific anions is 0 with respect to the total mass of the chemical solution. It was confirmed that 0.1% by mass or less was preferable (comparison between Examples 30 and 31).
- the content of one type of specific anion is more preferably 0.01% by mass or less based on the total mass of the chemical solution (comparison of Examples 2 and 6, Comparison between Examples 14 and 18), when the chemical solution contains two types of specific anions, the content of each of the two specific anions is more preferably 0.01% by mass or less based on the total mass of the chemical solution. (Comparison of Examples 31 and 35).
- the content of one type of specific anion is preferably 1 mass ppm or more (comparison of Examples 10 and 12, Comparison between Examples 27 and 29), when the chemical solution contains two types of specific anions, it was confirmed that the content of each of the two types of specific anions is preferably 1 mass ppm or more (Examples 38 and 40). comparison).
- the chemical solution contains both ClO 3 ⁇ and Cl ⁇ , and the content of ClO 3 ⁇ and the content of Cl ⁇ are respectively based on the total mass of the chemical solution. Thus, it was confirmed that the content was preferably 5% by mass to 1% by mass (comparison between Example 39 and Examples 9 and 26).
- the chemical solution preferably contains a specific cation from the viewpoint that the smoothness of the portion to be treated is more excellent (Comparison of Examples 18 to 20 with Examples 21 to 25 and 47 to 52, Example 53-55 and Examples 56-65). It was confirmed that the content (total content) of the specific cations is preferably 0.005% by mass or more based on the total mass of the chemical solution from the viewpoint of further improving the smoothness of the portion to be treated (Example 47). And 49). From the point that the smoothness of the portion to be treated is more excellent, the ratio (mass ratio) of the content (total content) of the hypochlorous acid to the content (total content) of the specific cation is 2.0 ⁇ 10 2. The following was confirmed to be preferable (comparison between Examples 47 and 49).
- hypochlorous acid preferably contains sodium hypochlorite from the viewpoint that the dissolution ability of the drug solution is more excellent (comparison between Examples 35 and 53 to 55).
- the pH of the drug solution is more than 7.0 and less than 9.0 from the viewpoint that the solubility of the drug solution is more excellent (comparison between Examples 35 and 41 to 46).
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
本発明者らは特許文献1に開示された方法を用いて遷移金属含有物の除去性について検討したところ、遷移金属含有物に対する溶解能と、被処理部の平滑性との両立が必ずしも十分でなく、更なる改良が必要であった。
すなわち、以下の構成により上記課題を解決することができることを見出した。
次亜塩素酸及びその塩からなる群から選択される1種以上の次亜塩素酸類と、ClO3 -、及び、Cl-からなる群から選択される1種以上の特定アニオンと、を含有し、
薬液が1種の特定アニオンを含有する場合、1種の特定アニオンの含有量が、薬液の全質量に対して、5質量ppb~1質量%であり、
薬液が2種の特定アニオンを含有する場合、2種の特定アニオンの含有量が、それぞれ、薬液の全質量に対して、1質量%以下であり、2種の特定アニオンのうちの少なくとも1種の含有量が、薬液の全質量に対して、5質量ppb以上である、薬液。
〔2〕 薬液が、ClO3 -、及び、Cl-の両者を含有し、
ClO3 -の含有量、及び、Cl-の含有量が、それぞれ、薬液の全質量に対して、5質量ppb~1質量%である、〔1〕に記載の薬液。
〔3〕 次亜塩素酸類の含有量が、薬液の全質量に対して、30質量%以下である、〔1〕又は〔2〕に記載の薬液。
〔4〕 次亜塩素酸類の含有量が、薬液の全質量に対して、0.5~20.0質量%である、〔1〕~〔3〕のいずれかに記載の薬液。
〔5〕 特定アニオンの含有量に対する次亜塩素酸類の含有量の比が、5×10-1~1×107である、〔1〕~〔4〕のいずれかに記載の薬液。
〔6〕 薬液が1種の特定アニオンを含有する場合、1種の特定アニオンの含有量が、薬液の全質量に対して、1質量ppm~0.1質量%であり、薬液が2種の特定アニオンを含有する場合、2種の特定アニオンの含有量が、それぞれ、薬液の全質量に対して、1質量ppm~0.1質量%である、〔1〕及び〔3〕~〔5〕のいずれかに記載の薬液。
〔7〕 次亜塩素酸類が、次亜塩素酸ナトリウムを含有する、〔1〕~〔6〕のいずれかに記載の薬液。
〔8〕 薬液が、4級アンモニウムカチオン、及び、4級ホスホニウムカチオンからなる群から選択される1種以上の特定カチオンを更に含有する、〔1〕~〔7〕のいずれかに記載の薬液。
〔9〕 遷移金属含有物が、Ru、Rh、Ti、Ta、Co、Cr、Hf、Os、Pt、Ni、Mn、Cu、Zr、Mo、La、W、及び、Irからなる群から選択される少なくとも1種を含有する、〔1〕~〔8〕のいずれかに記載の薬液。
〔10〕 遷移金属含有物が、Ru含有物を含有する、〔1〕~〔9〕のいずれかに記載の薬液。
〔11〕 pHが10.0以下である、〔1〕~〔10〕のいずれかに記載の薬液。
〔12〕 pHが7.0超9.0未満である、〔1〕~〔11〕のいずれかに記載の薬液。
〔13〕 〔1〕~〔12〕のいずれかに記載の薬液を用いて、基板上の遷移金属含有物を除去する工程Aを含有する、基板の処理方法。
〔14〕 遷移金属含有物が、Ru含有物を含有する、〔13〕に記載の基板の処理方法。
〔15〕 工程Aが、後述する工程A1、後述する工程A2、後述する工程A3、後述する工程A4、又は、後述する工程A5である、〔13〕又は〔14〕に記載の基板の処理方法。
〔16〕 工程Aが、工程A1であり、工程A1の前又は工程A1の後に、更に、後述工程Bを含有する、〔15〕に記載の基板の処理方法。
〔17〕 工程A1と工程Bとを交互に繰り返し行う、〔16〕に記載の基板の処理方法。
〔18〕 工程Aの後、更に、後述する工程Cを含有する、〔13〕~〔17〕のいずれかに記載の基板の処理方法。
〔19〕 リンス液が、フッ酸、塩酸、過酸化水素水、フッ酸と過酸化水素水との混合液、硫酸と過酸化水素水との混合液、アンモニア水と過酸化水素水との混合液、塩酸と過酸化水素水との混合液、二酸化炭素水、オゾン水、水素水、クエン酸水溶液、硫酸、アンモニア水、イソプロピルアルコール、次亜塩素酸水溶液、王水、超純水、硝酸、過塩素酸、シュウ酸水溶液、及び、オルト過ヨウ素酸水溶液からなる群から選択される溶液である、〔18〕に記載の処理方法。
〔20〕 薬液の温度が20~75℃である、〔13〕~〔19〕のいずれかに記載の処理方法。
以下に記載する構成要件の説明は、本発明の代表的な実施態様に基づいてなされることがあるが、本発明はそのような実施態様に制限されるものではない。
本明細書における基(原子群)の表記において、置換及び無置換を記していない表記は、本発明の効果を損ねない範囲で、置換基を有さないものと共に置換基を有するものをも包含するものである。例えば、「アルキル基」とは、置換基を有さないアルキル基(無置換アルキル基)のみならず、置換基を有するアルキル基(置換アルキル基)をも包含するものである。このことは、各化合物についても同義である。
本明細書中における「露光」とは、特に断らない限り、水銀灯、エキシマレーザーに代表される遠紫外線、X線、及び、EUV(Extreme ultraviolet)光等による露光のみならず、電子線、及び、イオンビーム等の粒子線による描画も露光に含める。
なお、本明細書において、「~」を用いて表される数値範囲は、「~」の前後に記載される数値を下限値及び上限値として含有する範囲を意味する。
薬液は、基板上の遷移金属含有物を除去するために用いられる。
薬液は、次亜塩素酸類と、特定アニオンとを含有する。
上記次亜塩素酸類は、次亜塩素酸及びその塩からなる群から選択される1種以上である。
上記特定アニオンは、ClO3 -、及び、Cl-からなる群から選択される1種以上である。
薬液が1種の特定アニオンを含有する場合、上記1種の特定アニオンの含有量は、薬液の全質量に対して、5質量ppb~1質量%である。
薬液が2種の特定アニオンを含有する場合、上記2種の特定アニオンの含有量は、それぞれ、薬液の全質量に対して、1質量%以下であり、上記2種の特定アニオンのうちの少なくとも1種の含有量が、薬液の全質量に対して、5質量ppb以上である。
まず、薬液が次亜塩素酸類を含有することで遷移金属に対する優れた溶解性を実現する。また、薬液における特定アニオンの含有量が所定量以上であるため、薬液で基板上の遷移金属含有物を除去する際に生じる金属系成分(金属イオン等)等が、特定アニオンと相互作用して基板上に残留しにくく、被処理部の平滑性が改善される。
薬液は、次亜塩素酸類を含有する。
本明細書において、次亜塩素酸類とは、次亜塩素酸及びその塩からなる群から選択される化合物の総称である。
次亜塩素酸の塩としては、特に制限されず、次亜塩素酸とアルカリ金属元素(ナトリウム及びカリウム等)との塩、次亜塩素酸とアルカリ土類金属元素(マグネシウム及びカルシウム等)、並びに、次亜塩素酸とその他の金属元素との塩が挙げられる。
次亜塩素酸類としては、次亜塩素酸(HClO)、次亜塩素酸ナトリウム(NaClO)、次亜塩素酸カリウム(NaClO)、又は、次亜塩素酸カルシウム(Ca(ClO)2)が好ましく、薬液の溶解能が優れる点から、次亜塩素酸ナトリウムがより好ましい。
被処理部の平滑性がより優れる点から、次亜塩素酸類の含有量は、薬液の全質量に対して、40.0質量%以下が好ましく、30.0質量%以下がより好ましく、15.0質量%以下が更に好ましい。
薬液の溶解能と被処理部の平滑性とがよりバランス良く優れる点からは、次亜塩素酸類の含有量は、薬液の全質量に対して、0.1~15.0質量%が好ましく、0.5~5.0質量%がより好ましい。
薬液は、特定アニオンを含有する。
特定アニオンとは、ClO3 -(塩素酸イオン)、及び、Cl-(塩化物イオン)からなる群から選択される1種のアニオンである。
薬液が含有する特定アニオンは1種でもよいし、2種でもよい。言い換えると、薬液は、ClO3 -及びCl-から選択される1種のみを含有してもよいし、ClO3 -及びCl-の両者を含有してもよい。
以下、薬液の全質量に対する5質量ppb~1質量%の含有量を「所定含有量」ともいい、薬液中に所定含有量で存在する特定アニオンを「所定含有量アニオン」ともいう。
薬液の溶解能がより優れる点から、所定含有量アニオンの含有量(つまり、所定含有量)は、薬液の全質量に対して、0.1質量%以下が好ましく、0.01質量%以下がより好ましい。
被処理部の平滑性がより優れる点から、所定含有量アニオンの含有量(つまり、所定含有量)は、薬液の全質量に対して、1質量ppm以上が好ましく、0.001質量%以上がより好ましく、0.1質量%超が更に好ましい。
薬液の溶解能と被処理部の平滑性とがよりバランス良く優れる点からは、所定含有量アニオンの含有量(つまり、所定含有量)は、薬液の全質量に対して、1質量ppm~0.1質量%が好ましく、0.001質量%~0.01質量%がより好ましい。
また、上記2種の特定アニオンの内の少なくとも1種の含有量が、薬液の全質量に対して、5質量ppb以上(被処理部の平滑性がより優れる点から、好ましくは1質量ppm以上、より好ましくは0.001質量%以上、更に好ましくは0.1質量%超)である。
言い換えると、薬液は、所定含有量アニオンを少なくとも1種含有し、かつ、いずれの特定アニオンの含有量も薬液の全質量に対して1質量%超になることはない。
薬液が2種の所定含有量アニオンを含有する場合、そのうちの少なくとも1種の所定含有量アニオンの含有量は、1質量ppm~0.1質量%が好ましく、0.001~0.01質量%がより好ましい。2種の所定含有量アニオンの含有量が、それぞれ、上記範囲内であってもよい。
薬液が2種の特定アニオンを含有する場合、薬液中の特定アニオンの合計含有量は、薬液の全質量に対して、5質量ppb超2質量%以下であり、2質量ppm~0.2質量%が好ましく、0.002~0.02質量%がより好ましい。
薬液の溶解能と被処理部の平滑性とがよりバランス良く優れる点からは、5×100~1×107が好ましく、5×101~1×104がより好ましい。
特定アニオンを含有する化合物としては、特に制限されず、例えば、次亜塩素酸類の溶液(好ましくは水溶液)中で解離して特定アニオンとカチオンとを生じる化合物が挙げられる。
より具体的な化合物としては、塩素酸(HClO3)、塩酸(HCl)、及び、それらの塩(例えばアルカリ金属との塩、アルカリ土類金属との塩)が挙げられ、塩素酸、塩素酸ナトリウム(NaClO3)、塩素酸カリウム(KClO3)、塩酸、塩酸ナトリウム(NaCl)、又は、塩酸カリウム(KCl)が好ましく、塩素酸、又は、塩酸がより好ましい。
ClO3 -及びCl-の両者を含有する薬液の調製に使用される、ClO3 -を含有する化合物及びCl-を含有する化合物の組合せとしては、特に制限されず、例えば、塩素酸及びその塩から選択される1種以上と、塩酸及びその塩から選択される1種以上との組合せが挙げられ、塩素酸、塩素酸ナトリウム又は塩素酸カリウムと、塩酸、塩酸ナトリウム又は塩酸カリウムとの組合せが好ましく、塩素酸と塩酸との組合せがより好ましい。
薬液は、上述した以外にもその他の任意成分を含有してもよい。以下、任意成分について説明する。
薬液は、第4級アンモニウムカチオン、及び、第4級ホスホニウムカチオンからなる群から選択される1種以上の特定カチオンを含有してもよい。被処理部の平滑性がより優れる点から、薬液は特定カチオンを含有することが好ましい。
薬液が含有する特定カチオンは1種でもよいし、2種以上でもよい。言い換えると、薬液は、第4級アンモニウムカチオン及び第4級ホスホニウムカチオンから選択される1種のみを含有してもよいし、第4級アンモニウムカチオン及び第4級ホスホニウムカチオンの両者を含有してもよい。また、薬液は、2種以上の第4級アンモニウムカチオンを含有してもよいし、2種以上の第4級ホスホニウムカチオンを含有してもよい。
第4級アンモニウムカチオンは、窒素原子に4つの炭化水素基が置換してなるカチオンであれば特に制限されないが、下記式(1)で表されるカチオンが好ましい。
ヒドロキシアルキル基としては、炭素数1~6のヒドロキシアルキル基が好ましく、ヒドロキシメチル基、ヒドロキシエチル基、ヒドロキシプロピル基、又は、ヒドロキシブチル基がより好ましい。
アリール基としては、フェニル基、又は、ナフチル基が好ましく、フェニル基がより好ましい。
式(1)中のR4A~R4Dとしては、炭素数1~6のアルキル基、炭素数1~6のヒドロキシアルキル基、又は、ベンジル基が好ましく、メチル基、エチル基、プロピル基、ブチル基、又は、ヒドロキシエチル基がより好ましく、メチル基、又は、エチル基が更に好ましい。
また、式(1)で表されるカチオンとしては、特表2015-518068号公報に記載の第4級アンモニウム水酸化物が含有する第4級アンモニウムカチオンも好ましい。
第4級アンモニウム化合物としては、例えば、第4級アンモニウム水酸化物、第4級アンモニウムフッ化物、第4級アンモニウム塩化物、第4級アンモニウム臭化物、第4級アンモニウムヨウ化物、第4級アンモニウムの酢酸塩、及び、第4級アンモニウムの炭酸塩が挙げられ、第4級アンモニウム水酸化物、又は、第4級アンモニウム塩化物が好ましく、第4級アンモニウム水酸化物がより好ましい。
また、第4級アンモニウム水酸化物としては、特表2015-518068号公報に記載の第4級アンモニウム水酸化物を使用してもよい。
第4級アンモニウム塩化物としては、上述した好ましい第4級アンモニウム水酸化物の水酸化物イオン(OH-)を塩化物イオン(Cl-)に代えた化合物が好ましく、テトラメチルアンモニウムクロリド、テトラエチルアンモニウムクロリド、エチルトリメチルアンモニウムクロリド、テトラプロピルアンモニウムクロリド、又は、テトラブチルアンモニウムクロリドがより好ましい。
第4級ホスホニウムカチオンは、リン原子に4つの炭化水素基が置換してなるカチオンであれば特に制限されないが、下記式(2)で表されるカチオンが好ましい。
R1R2R3R4P+ 式(2)
式(2)中、R1、R2、R3、及び、R4は、それぞれ独立に、置換基を有してもよい炭素数1~18の炭化水素基を表す。
炭化水素基としては、炭素数1~10のアルキル基(より好ましくは炭素数1~4のアルキル基)、フェニル基、ナフチル基、ベンジル基、又は、ナフチルメチル基が好ましい。
炭化水素基が有する置換基としては、例えば、アルキル(好ましくは炭素数1~6のアルキル)カルボニル基、ホルミル基、アルコキシ基(好ましくは炭素数1~6のアルコキシ基)、ハロゲン原子、シアノ基、及び、シリル基が挙げられ、メチルカルボニル基、ホルミル基、メトキシ基、エトキシ基、塩素原子、又は、シアノ基が好ましい。
また、式(2)中、R1、R2、R3、及び、R4の少なくとも1つが、炭素数4~10のアルキル基又はフェニル基であることが好ましく、フェニル基であることがより好ましい。
中でも、アセトニルトリフェニルホスホニウムカチオン、アリルトリフェニルホスホニウムカチオン、ベンジルトリフェニルホスホニウムカチオン、テトラブチルホスホニウムカチオン、テトラフェニルホスホニウムカチオン、又は、トリブチル(シアノメチル)ホスホニウムカチオンが好ましく、アセトニルトリフェニルホスホニウムカチオン、アリルトリフェニルホスホニウムカチオン、ベンジルトリフェニルホスホニウムカチオン、テトラブチルホスホニウムカチオン、又は、テトラフェニルホスホニウムカチオンがより好ましい。
第4級ホスホニウム化合物としては、例えば、第4級ホスホニウム水酸化物、第4級ホスホニウムフッ化物、第4級ホスホニウム塩化物、第4級ホスホニウム臭化物、第4級ホスホニウムヨウ化物、第4級ホスホニウムの酢酸塩、及び、第4級ホスホニウムの炭酸塩が挙げられ、第4級ホスホニウム水酸化物、又は、第4級ホスホニウム塩化物が好ましく、第4級ホスホニウム塩化物がより好ましい。
第4級ホスホニウム塩化物としては、式(2)で表されるカチオンと塩化物イオン(Cl-)とを含有する化合物が好ましく、アセトニルトリフェニルホスホニウムクロリド、アリルトリフェニルホスホニウムクロリド、ベンジルトリフェニルホスホニウムクロリド、テトラブチルホスホニウムクロリド、テトラフェニルホスホニウムクロリド、又は、トリブチル(シアノメチル)ホスホニウムクロリドがより好ましく、アセトニルトリフェニルホスホニウムクロリド、アリルトリフェニルホスホニウムクロリド、ベンジルトリフェニルホスホニウムクロリド、テトラブチルホスホニウムクロリド、又は、テトラフェニルホスホニウムクロリドが更に好ましい。
薬液は、pH調整剤を含有してもよい。
pH調整剤としては、例えば、無機酸、有機酸、有機塩基、及び、無機塩基が挙げられる。
pH調整剤は、薬液のpHが後述する好ましい範囲になるよう、適宜、使用するpH調整剤の種類を選択し、含有量を調整すればよい。
pH調整剤は、1種単独で使用してもよいし、2種以上を使用してもよい。
なお、硫酸、酢酸、硝酸、リン酸、及び、フッ酸は、それぞれ、H2SO4、CH3COOH、HNO3、H3PO4、及び、HFが、水に溶解した水溶液を意図する。
また、薬液は、有機塩基として、上述した第4級アンモニウム水酸化物を含有していてもよい。言い換えれば、薬液が第4級アンモニウム水酸化物を含有する場合、第4級アンモニウム水酸化物は、特定カチオンの供給源としての機能と、pH調整剤としての機能とを併せ持つ。
水溶性アミンとしては、例えば、ジグリコールアミン(DGA)、メチルアミン、エチルアミン、プロピルアミン、ブチルアミン、ペンチルアミン、エタノールアミン、プロパノールアミン、ブタノールアミン、メトキシエチルアミン、メトキシプロピルアミン、ジメチルアミン、ジエチルアミン、ジプロピルアミン、トリメチルアミン、及び、トリエチルアミンが挙げられる。また、水溶性アミンとして、無置換ヒドロキシルアミン及びヒドロキシルアミン誘導体を使用してもよい。
アルカリ金属水酸化物及びアルカリ土類金属水酸化物としては、例えば、水酸化リチウム、水酸化ナトリウム、水酸化カリウム、及び、水酸化カルシウムが挙げられる。
pH調整剤として有機塩基又は無機塩基を使用する場合は、半導体デバイスの電気特性に影響を及ぼしにくい点、及び、次亜塩素酸類との反応性が低い点から、第4級アンモニウム水酸化物、又は、水溶性アミンが好ましい。
薬液は、溶剤を含有してもよい。
溶剤としては、水、及び、有機溶剤が挙げられ、水が好ましい。
水は、不可避的な微量混合成分を含有してもよい。中でも、蒸留水、イオン交換水、又は、超純水といった浄化処理を施された水が好ましく、半導体製造に使用される超純水がより好ましい。
薬液中の水の濃度は、特に制限されないが、60質量%以上が好ましく、70質量%以上がより好ましく、97質量%以上が更に好ましい。また、上限値は、特に制限されないが、99.9質量%以下が好ましく、99質量%以下がより好ましい。
他の成分としては、特に制限はなく、公知の成分が挙げられる。例えば、特開2014-93407号公報の段落0026等に記載、特開2013-55087号公報の段落0024~0027等に記載、及び、特開2013-12614号公報の段落0024~0027等に記載の各界面活性剤が挙げられる。
また、特開2014-107434号公報の段落0017~0038、特開2014-103179号公報の段落0033~0047、及び、特開2014-93407号公報の段落0017~0049等に開示の各添加剤(防食剤等)が挙げられる。
つまり、薬液がpH調整剤を含有する場合、pH調整剤の含有量は、薬液のpHが上記範囲になる量が好ましい。
また、調製方法としては、設定pHに予め調整しておいてから混合する方法、又は、混合後に設定pHに調整する方法も挙げられる。更に、濃縮液を製造して、使用時に希釈して所定の濃度へと調整する方法を用いることもできる。また、濃縮液を希釈後、設定pHに調整して用いることもできる。また、濃縮液に対して設定量の希釈用の水を添加することもでき、また希釈用の水に所定量の濃縮液を添加することもできる。
薬液は、基板上の遷移金属含有物を除去するために用いられる。
なお、本明細書における「基板上」とは、例えば、基板の表裏、側面、及び、溝内等のいずれも含有する。また、基板上の遷移金属含有物とは、基板の表面上に直接遷移金属含有物がある場合のみならず、基板上に他の層を介して遷移金属含有物がある場合も含有する。
つまり、遷移金属含有物としては、金属M含有物が好ましい。
中でも、遷移金属含有物としては、Ru含有物がより好ましい。つまり、薬液は、Ru含有物の除去に用いられることがより好ましい。
Ru含有物中のRu原子の含有量は、Ru含有物の全質量に対して、10質量%以上が好ましく、30質量%以上がより好ましく、50質量%以上が更に好ましく、90質量%以上が特に好ましい。上限は特に制限されず、100質量%が挙げられる。
なお、上記酸化物、窒化物、及び、酸窒化物は、遷移金属を含有する、複合酸化物、複合窒化物、及び、複合酸窒化物でもよい。
遷移金属含有物中の遷移金属原子の含有量は、遷移金属含有物全質量に対して、10質量%以上が好ましく、30質量%以上がより好ましく、50質量%以上が更に好ましい。
上限は、遷移金属含有物が遷移金属そのものであってもよいことから、100質量%である。
基板の種類は特に制限されないが、半導体基板が好ましい。
上記基板には、半導体ウエハ、フォトマスク用ガラス基板、液晶表示用ガラス基板、プラズマ表示用ガラス基板、FED(Field Emission Display)用基板、光ディスク用基板、磁気ディスク用基板、及び、光磁気ディスク用基板等の各種基板が挙げられる。
半導体基板を構成する材料としては、ケイ素、ケイ素ゲルマニウム、及び、GaAs等の第III-V族化合物、並びに、それらの任意の組合せが挙げられる。
基板上の遷移金属含有物の形態は特に制限されず、例えば、膜状に配置された形態(遷移金属含有膜)、配線状に配置された形態(遷移金属含有配線)、及び、粒子状に配置された形態のいずれであってもよい。上述したように、遷移金属としてはRuが好ましく、被処理物としては、基板と、基板上に配置されたRu含有膜、Ru含有配線、又は粒子状のRu含有物とを含有する被処理物が好ましい。
なお、遷移金属含有物が粒子状に配置された形態としては、例えば、後述するように、遷移金属含有膜が配置された基板に対してドライエッチングを施した後に、残渣として粒子状の遷移金属含有物が付着している基板、及び、遷移金属含有膜に対してCMP(chemical mechanical polishing、化学的機械的研磨処理)を施した後に、残渣として粒子状の遷移金属含有物が付着している基板が挙げられる。
遷移金属含有膜の厚みは特に制限されず、用途に応じて適宜選択すればよく、例えば、50nm以下が好ましく、20nm以下がより好ましく、10nm以下が更に好ましい。
遷移金属含有膜は、基板の片側の主面上にのみに配置されていてもよいし、両側の主面上に配置されていてもよい。また、遷移金属含有膜は、基板の主面全面に配置されていてもよいし、基板の主面の一部に配置されていてもよい。
基板は、曝露された集積回路構造、例えば金属配線及び誘電材料等の相互接続機構を含有していてもよい。相互接続機構に使用する金属及び合金としては、例えば、アルミニウム、銅アルミニウム合金、銅、チタン、タンタル、コバルト、ケイ素、窒化チタン、窒化タンタル、及び、タングステンが挙げられる。基板は、酸化ケイ素、窒化ケイ素、炭化ケイ素、及び/又は、炭素ドープ酸化ケイ素の層を含有していてもよい。
被処理物の製造方法は、特に制限されない。例えば、スパッタリング法、化学気相成長(CVD:Chemical Vapor Deposition)法、分子線エピタキシー(MBE:Molecular Beam Epitaxy)法等で、基板上に遷移金属含有膜を形成できる。なお、スパッタリング法及びCVD法等により遷移金属含有膜を形成した場合、遷移金属含有膜が配置された基板の裏面(遷移金属含有膜側とは反対側の表面)にも、遷移金属含有物が付着する場合がある。
また、所定のマスクを介して上記方法を実施して、基板上に遷移金属含有配線を形成してもよい。
また、遷移金属含有膜又は遷移金属含有配線が配置された基板であって、所定の処理が施された基板を、処理方法の被処理物として用いてもよい。
例えば、遷移金属含有膜又は遷移金属含有配線が配置された基板をドライエッチングに供して、遷移金属を含有するドライエッチング残渣を有する基板を製造してもよい。また、遷移金属含有膜又は遷移金属含有配線が配置された基板をCMPに供して、遷移金属含有物を有する基板を製造してもよい。
基板の処理方法(以後、「本処理方法」ともいう)は、上述した薬液を用いて、基板上の遷移金属含有物を除去する工程Aを含有する。
上述したように、遷移金属含有物がRu含有物を含有する場合に、本処理方法を適用することが好ましい。
本処理方法で用いられる薬液は、上述した通りである。
また、本処理方法の被処理物である、遷移金属含有物を含有する基板に関しても、上述した通りである。
接触させる方法は特に制限されず、例えば、タンクに入れた薬液中に被処理物を浸漬する方法、被処理物上に薬液を噴霧する方法、被処理物上に薬液を流す方法、及び、それらの任意の組み合わせが挙げられる。中でも、被処理物を薬液に浸漬する方法が好ましい。
機械式撹拌方法としては、例えば、被処理物上で薬液を循環させる方法、被処理物上で薬液を流過又は噴霧させる方法、及び、超音波又はメガソニックにて薬液を撹拌する方法等が挙げられる。
処理の際の薬液の温度は特に制限されないが、20~75℃が好ましく、20~60℃がより好ましく、40~65℃が更に好ましく。50~65℃が特に好ましい。
中でも、工程Aは、工程A2又は工程A3であることがより好ましい。
以下、上記各処理に用いられる本処理方法について説明する。
工程Aとしては、薬液を用いて基板上に配置された遷移金属含有配線をリセスエッチング処理する工程A1が挙げられる。
図1に、工程A1のリセスエッチング処理の被処理物である遷移金属含有配線を含有する基板(以後、「配線基板」ともいう)の一例を示す断面上部の模式図を示す。
図1に示す配線基板10aは、図示しない基板と、基板上に配置された溝を含有する絶縁膜12と、溝の内壁に沿って配置されたバリアメタル層14と、溝内部に充填された遷移金属含有配線16とを含有する。
遷移金属含有配線としては、Ru含有配線(Ruを含有する配線)が好ましい。Ru含有配線は、Ruの単体、Ruの合金、Ruの酸化物、Ruの窒化物、又は、Ruの酸窒化物を含有することが好ましい。
配線基板中のバリアメタル層を構成する材料は特に制限されず、例えば、TiN及びTaNが挙げられる。
なお、図1においては、配線基板がバリアメタル層を含有する態様について述べたが、バリアメタル層を含有しない配線基板であってもよい。
より具体的には、工程A1を実施すると、図2の配線基板10bに示すように、バリアメタル層14及び遷移金属含有配線16の一部が除去されて、凹部18が形成される。
薬液と配線基板との接触方法は、上述した通りである。
薬液と配線基板との接触時間及び薬液の温度の好適範囲は、上述した通りである。
なお、工程A1の前、又は、工程A1の後に、必要に応じて、所定の溶液(以後、「特定溶液」ともいう)を用いて、工程A1で得られた基板を処理する工程Bを実施してもよい。
特に、上述したように、基板上にバリアメタル層が配置されている場合、遷移金属含有配線を構成する成分とバリアメタル層を構成する成分とでは、その種類によって薬液に対する溶解性が異なる場合がある。そのような場合、バリアメタル層に対してより溶解性が優れる溶液を用いて、遷移金属含有配線とバリアメタル層との溶解の程度を調整することが好ましい。
このような点から、特定溶液は、遷移金属含有配線に対する溶解性が乏しく、バリアメタル層を構成する物質に対して溶解性が優れる溶液が好ましい。
FPMの組成は、例えば、「フッ酸:過酸化水素水:水=1:1:1」~「フッ酸:過酸化水素水:水=1:1:200」の範囲内(体積比)が好ましい。
SPMの組成は、例えば、「硫酸:過酸化水素水:水=3:1:0」~「硫酸:過酸化水素水:水=1:1:10」の範囲内(体積比)が好ましい。
APMの組成は、例えば、「アンモニア水:過酸化水素水:水=1:1:1」~「アンモニア水:過酸化水素水:水=1:1:30」の範囲内(体積比)が好ましい。
HPMの組成は、例えば、「塩酸:過酸化水素水:水=1:1:1」~「塩酸:過酸化水素水:水=1:1:30」の範囲内(体積比)が好ましい。
なお、これらの好ましい組成比の記載は、フッ酸は49質量%フッ酸、硫酸は98質量%硫酸、アンモニア水は28質量%アンモニア水、塩酸は37質量%塩酸、過酸化水素水は31質量%過酸化水素水である場合における組成比を意図する。
ラフネスの低減の点からは、APM、HPM、又は、FPMが好ましく、APMがより好ましい。
性能が、バランス良く優れる点からは、APM又はHPMが好ましい。
特定溶液と工程A1で得られた基板とを接触させる方法は特に制限されず、例えば、薬液を基板に接触させるのと同様の方法が挙げられる。
特定溶液と工程A1で得られた基板との接触時間は、例えば、0.25~10分間が好ましく、0.5~5分間がより好ましい。
交互に繰り返し行う場合は、工程A1及び工程Bはそれぞれ1~10回実施されることが好ましい。また、工程A1と工程Bとを交互に繰り返し行う場合、最初に行う工程及び最後に行う工程は、工程A1及び工程Bのいずれであってもよい。
工程Aとしては、薬液を用いて遷移金属含有膜が配置された基板の外縁部の遷移金属含有膜を除去する工程A2が挙げられる。
図3に、工程A2の被処理物である遷移金属含有膜が配置された基板の一例を示す模式図(上面図)を示す。
図3に示す、工程A2の被処理物20は、基板22と、基板22の片側の主面上(実線で囲まれた全域)に配置された遷移金属含有膜24とを含有する積層体である。後述するように、工程A2では、被処理物20の外縁部26(破線の外側の領域)に位置する遷移金属含有膜24が除去される。
なお、遷移金属含有膜としては、Ru含有膜(Ruを含有する膜)が好ましい。Ru含有膜は、Ruの単体、Ruの合金、Ruの酸化物、Ruの窒化物、又は、Ruの酸窒化物を含有することが好ましい。
工程A2の処理の際には、特開2010-267690号公報、特開2008-80288号公報、特開2006-100368号公報、及び、特開2002-299305号公報に記載の基板処理装置及び基板処理方法を好ましく適用できる。
薬液と被処理物との接触時間及び薬液の温度の好適範囲は、上述した通りである。
工程Aとしては、薬液を用いて遷移金属含有膜が配置された基板の裏面に付着する遷移金属含有物を除去する工程A3が挙げられる。
工程A3の被処理物としては、工程A2で用いられた被処理物が挙げられる。工程A2で用いられる、基板と、基板の片側の主面上に遷移金属含有膜が配置された被処理物を形成する際には、スパッタリング及びCVD等で遷移金属含有膜を形成される。その際、基板の遷移金属含有膜側とは反対側の表面上(裏面上)には、遷移金属含有物が付着する場合がある。このような被処理物中の遷移金属含有物を除去するために、工程A3が実施される。
薬液と被処理物との接触時間及び薬液の温度の好適範囲は、上述した通りである。
工程Aとしては、薬液を用いてドライエッチング後の基板上の遷移金属含有物を除去する工程A4が挙げられる。
図4に、工程A4の被処理物の一例を示す模式図を示す。
図4に示す被処理物30は、基板32上に、遷移金属含有膜34、エッチング停止層36、層間絶縁膜38、メタルハードマスク40をこの順に備え、ドライエッチング工程等を経たことで所定位置に遷移金属含有膜34が露出するホール42が形成されている。つまり、図4に示す被処理物は、基板32と、遷移金属含有膜34と、エッチング停止層36と、層間絶縁膜38と、メタルハードマスク40とをこの順で備え、メタルハードマスク40の開口部の位置において、その表面から遷移金属含有膜34の表面まで貫通するホール42を備える積層物である。ホール42の内壁44は、エッチング停止層36、層間絶縁膜38及びメタルハードマスク40からなる断面壁44aと、露出された遷移金属含有膜34からなる底壁44bとで構成され、ドライエッチング残渣46が付着している。
ドライエッチング残渣は、遷移金属含有物を含有する。
遷移金属含有物としては、Ru含有物が好ましい。Ru含有物は、Ruの単体、Ruの合金、Ruの酸化物、Ruの窒化物、又は、Ruの酸窒化物を含有することが好ましい。
層間絶縁膜及びメタルハードマスクとしては、公知の材料が選択される。
なお、図4においては、メタルハードマスクを用いる態様について述べたが、公知のフォトレジスト材料を用いて形成されるレジストマスクを用いてもよい。
薬液と配線基板との接触方法は、上述した通りである。
薬液と配線基板との接触時間及び薬液の温度の好適範囲は、上述した通りである。
工程Aとしては、薬液を用いて化学的機械的研磨処理(CMP:chemical mechanical polishing)後の基板上の遷移金属含有物を除去する工程A5が挙げられる。
絶縁膜の平坦化、接続孔の平坦化、及び、ダマシン配線等の製造工程にCMP技術が導入されている。CMP後の基板は、多量に研磨粒子に用いられる粒子及び金属不純物等により汚染される場合がある。そのため、次の加工段階に入る前にこれらの汚染物を除去し、洗浄する必要がある。そこで、工程A5を実施することにより、CMPの被処理物が遷移金属含有配線又は遷移金属含有膜を含有する場合に発生して基板上に付着する遷移金属含有物を除去できる。
遷移金属含有物としては、Ru含有物が好ましい。Ru含有物は、Ruの単体、Ruの合金、Ruの酸化物、Ruの窒化物、又は、Ruの酸窒化物を含有することが好ましい。
工程A5の具体的な方法としては、薬液と、上記被処理物とを接触させる方法が挙げられる。
薬液と配線基板との接触方法は、上述した通りである。
薬液と配線基板との接触時間及び薬液の温度の好適範囲は、上述した通りである。
本処理工程は、上記工程Aの後に、必要に応じて、リンス液を用いて、工程Aで得られた基板に対してリンス処理を行う工程Cを含有していてもよい。
薬液を基板と接触させることで、薬液の次亜塩素酸類に由来する塩素化合物が基板の表面上に残存塩素(Cl残り)として付着する場合がある。このような残存塩素(Cl残り)が以降のプロセス及び/又は最終製品に悪影響を与える恐れがある。リンス工程を行うことで、基板の表面から残存塩素(Cl残り)を除去できる。
FPM、SPM、APM、及び、HPMとして好ましい条件は、例えば、上述の特定溶液として使用される、FPM、SPM、APM、及び、HPMとしての好ましい条件と同様である。
なお、フッ酸、硝酸、過塩素酸、及び、塩酸は、それぞれ、HF、HNO3、HClO4、及び、HClが、水に溶解した水溶液を意図する。
オゾン水、二酸化炭素水、及び、水素水は、それぞれ、O3、CO2、及び、H2を水に溶解させた水溶液を意図する。
リンス工程の目的を損なわない範囲で、これらのリンス液を混合して使用してもよい。
接触させる方法としては、タンクに入れたリンス液中に基板を浸漬する方法、基板上にリンス液を噴霧する方法、基板上にリンス液を流す方法、又はそれらの任意の組み合わせた方法で実施される。
処理の際のリンス液の温度は特に制限されないが、一般に、16~60℃が好ましく、18~40℃がより好ましい。リンス液として、SPMを用いる場合、その温度は90~250℃が好ましい。
乾燥時間は、用いる特定の方法に応じて変わるが、通例は30秒~数分程度である。
その他の工程としては、例えば、金属配線、ゲート構造、ソース構造、ドレイン構造、絶縁層、強磁性層及び/又は非磁性層等の各構造の形成工程(層形成、エッチング、化学機械研磨、変成等)、レジストの形成工程、露光工程及び除去工程、熱処理工程、洗浄工程、並びに、検査工程等が挙げられる。
本処理方法において、バックエンドプロセス(BEOL:Back end of the line)中で行っても、フロントエンドプロセス(FEOL:Front end of the line)中で行ってもよいが、本発明の効果をより発揮できる観点から、フロントエンドプロセス中で行うことが好ましい。
次亜塩素酸類を所定の濃度で含有する水溶液(混合液)を調製した後、更に、特定アニオンの供給源、及び、pH調整剤を添加して、下記表1に示す配合の薬液を調製した。
以下に、薬液の調製に用いた次亜塩素酸類、特定アニオン及び/又は特定カチオンの供給源として使用された化合物、並びに、pH調整剤を示す。薬液の調製に用いた原料はいずれも、半導体グレードの高純度原料であった。
NaClO:次亜塩素酸ナトリウム
KClO:次亜塩素酸カリウム
Ca(ClO)2:次亜塩素酸カルシウム
HClO:次亜塩素酸
HClO3:塩素酸
NaClO3:塩素酸ナトリウム
KClO3:塩素酸カリウム
HCl:塩酸
NaCl:塩化ナトリウム
KCl:塩化カリウム
N(CH3)4Cl:テトラメチルアンモニウムクロリド
N(C2H5)4Cl:テトラエチルアンモニウムクロリド
N(C2H5)(CH3)3Cl:エチルトリメチルアンモニウムクロリド
N(C3H7)4Cl:テトラプロピルアンモニウムクロリド
P(C6H5)4Cl:テトラフェニルホスホニウムクロリド
硫酸(95質量%硫酸)
硝酸(60質量%硝酸)
フッ酸(49質量%フッ酸)
TMAH:テトラメチルアンモニウム水酸化物
TEAH:テトラエチルアンモニウム水酸化物
ETMAH:エチルトリメチルアンモニウム水酸化物
TBAH:テトラブチルアンモニウム水酸化物
また、特定カチオンの供給源の添加量は、薬液の全質量に対する特定カチオンの含有量が、「特定カチオン」欄の「含有量」欄に記載された値になる量であり、pH調整剤の添加量は、薬液が「薬液のpH」欄に示したpHになる量であった。なお、pH調整剤が特定カチオンの供給源を兼ねる場合、「特定カチオン」欄の「含有量」欄に、そのpH調整剤を添加した後の薬液が含有する特定カチオンの含有量を示す。
表中に記載される成分以外(残部)は水である。
市販のシリコンウエハ(直径:12インチ)の一方の表面上に、CVD(Chemical Vapor Deposition)法によりルテニウム層を形成した基板をそれぞれ準備した。ルテニウム層の厚さは15nmとした。
得られた基板を、薬液を満たした容器に入れ、薬液を撹拌してルテニウム層の除去処理を実施した。薬液の温度は60℃とした。
<溶解能>
ルテニウム層が消失するまでに要した時間(除去所要時間)を測定し、下記基準に当てはめて薬液の溶解能を評価した。
なお、除去所要時間が短いほど、薬液の溶解能が優れる。
B:30秒<除去所要時間≦45秒
C:45秒<除去所要時間≦60秒
D:60秒<除去所要時間≦120秒
E:120秒<除去所要時間
溶解能の評価で確認された除去所要時間の半分の時間だけ除去処理を実施した時点で除去処理を中断し、ルテニウム層の表面を走査型電子顕微鏡で観察して、被処理部の平滑性を下記基準で評価した。
なお、溶解能の評価がEであった薬液を用いた場合は、120秒間除去処理を行った時点での、ルテニウム層の表面を走査型電子顕微鏡で観察して平滑性を評価した。
B:ルテニウム層の表面が滑らかで、ほぼラフネスがない。
C:ルテニウム層の表面が滑らかで、若干ラフネスがある(Bよりラフネスが多い)。
D:ルテニウム層の表面に粗さがあるが、許容レベル。
E:ルテニウム層の表面が粗い。
表1中、「E+n(nは整数)」及び「E-n(nは整数)」の記載は、それぞれ、「×10+n」及び「×10-n」を意味する。
「次亜塩素酸類/特定アニオン」の欄は、薬液中、特定アニオンの含有量(薬液がClO3 -及びCl-の両者を含有する場合はその合計含有量)に対する次亜塩素酸類の含有量の質量比を意味する。
「次亜塩素酸類/特定カチオン」の欄は、薬液中、特定カチオンの含有量に対する次亜塩素酸類の含有量の質量比を意味する。
被処理部の平滑性がより優れる点からは、次亜塩素酸類の含有量は、薬液の全質量に対して、15.0質量%以下が好ましいことが確認された(実施例4~5の比較、実施例16~17の比較、実施例33~34の比較)。
中でも、薬液が1種の特定アニオンを含有する場合、1種の特定アニオンの含有量は、薬液の全質量に対して、0.01質量%以下がより好ましく(実施例2及び6の比較、実施例14及び18の比較)、薬液が2種の特定アニオンを含有する場合、2種の特定アニオンの含有量は、それぞれ、薬液の全質量に対して、0.01質量%以下がより好ましいことが確認された(実施例31及び35の比較)。
被処理部の平滑性がより優れる観点からは、薬液が、ClO3 -及びCl-の両者を含有し、ClO3 -の含有量及びCl-の含有量が、それぞれ、薬液の全質量に対して、5質量ppb~1質量%であることが好ましいことが確認された(実施例39と、実施例9及び26との比較等)。
被処理部の平滑性がより優れる点からは、特定アニオンの含有量(合計含有量)に対する、次亜塩素酸類の含有量(合計含有量)の比(質量比)は、2×106未満が好ましいことが確認された(実施例10及び12の比較、実施例27及び29の比較)。
被処理部の平滑性が更に優れる点からは、特定カチオンの含有量(合計含有量)は、薬液の全質量に対して、0.005質量%以上が好ましいことが確認された(実施例47及び49の比較)。
被処理部の平滑性が更に優れる点からは、特定カチオンの含有量(合計含有量)に対する次亜塩素酸類の含有量(合計含有量)の比(質量比)は、2.0×102以下が好ましいことが確認された(実施例47及び49の比較)。
10b 配線のリセスエッチング処理後の配線基板
12 層間絶縁膜
14 バリアメタル層
16 遷移金属含有配線
18 凹部
20,30 被処理物
22 基板
24 遷移金属含有膜
26 外縁部
32 基板
34 遷移金属含有膜
36 エッチング停止層
38 層間絶縁膜
40 メタルハードマスク
42 ホール
44 内壁
44a 断面壁
44b 底壁
46 ドライエッチング残渣
Claims (20)
- 基板上の遷移金属含有物を除去するために用いられる薬液であって、
次亜塩素酸及びその塩からなる群から選択される1種以上の次亜塩素酸類と、
ClO3 -、及び、Cl-からなる群から選択される1種以上の特定アニオンと、を含有し、
前記薬液が1種の特定アニオンを含有する場合、前記1種の特定アニオンの含有量が、前記薬液の全質量に対して、5質量ppb~1質量%であり、
前記薬液が2種の特定アニオンを含有する場合、前記2種の特定アニオンの含有量が、それぞれ、前記薬液の全質量に対して、1質量%以下であり、前記2種の特定アニオンのうちの少なくとも1種の含有量が、前記薬液の全質量に対して、5質量ppb以上である、薬液。 - 前記薬液が、ClO3 -、及び、Cl-の両者を含有し、
ClO3 -の含有量、及び、Cl-の含有量が、それぞれ、前記薬液の全質量に対して、5質量ppb~1質量%である、請求項1に記載の薬液。 - 前記次亜塩素酸類の含有量が、前記薬液の全質量に対して、30質量%以下である、請求項1又は2に記載の薬液。
- 前記次亜塩素酸類の含有量が、前記薬液の全質量に対して、0.5~20.0質量%である、請求項1~3のいずれか1項に記載の薬液。
- 前記特定アニオンの含有量に対する前記次亜塩素酸類の含有量の比が、5×10-1~1×107である、請求項1~4のいずれか1項に記載の薬液。
- 前記薬液が1種の特定アニオンを含有する場合、前記1種の特定アニオンの含有量が、前記薬液の全質量に対して、1質量ppm~0.1質量%であり、
前記薬液が2種の特定アニオンを含有する場合、前記2種の特定アニオンの含有量が、それぞれ、前記薬液の全質量に対して、1質量ppm~0.1質量%である、
請求項1及び3~5のいずれか1項に記載の薬液。 - 前記次亜塩素酸類が、次亜塩素酸ナトリウムを含有する、請求項1~6のいずれか1項に記載の薬液。
- 前記薬液が、第4級アンモニウムカチオン、及び、第4級ホスホニウムカチオンからなる群から選択される1種以上の特定カチオンを更に含有する、請求項1~7のいずれか1項に記載の薬液。
- 前記遷移金属含有物が、Ru、Rh、Ti、Ta、Co、Cr、Hf、Os、Pt、Ni、Mn、Cu、Zr、Mo、La、W、及び、Irからなる群から選択される少なくとも1種を含有する、請求項1~8のいずれか1項に記載の薬液。
- 前記遷移金属含有物が、Ru含有物を含有する、請求項1~9のいずれか1項に記載の薬液。
- pHが10.0以下である、請求項1~10のいずれか1項に記載の薬液。
- pHが7.0超9.0未満である、請求項1~11のいずれか1項に記載の薬液。
- 請求項1~12のいずれか1項に記載の薬液を用いて、基板上の遷移金属含有物を除去する工程Aを含有する、基板の処理方法。
- 前記遷移金属含有物が、Ru含有物を含有する、請求項13に記載の基板の処理方法。
- 前記工程Aが、前記薬液を用いて基板上に配置された遷移金属含有配線をリセスエッチング処理する工程A1、前記薬液を用いて遷移金属含有膜が配置された基板の外縁部の前記遷移金属含有膜を除去する工程A2、前記薬液を用いて遷移金属含有膜が配置された基板の裏面に付着する遷移金属含有物を除去する工程A3、前記薬液を用いてドライエッチング後の基板上の遷移金属含有物を除去する工程A4、又は、前記薬液を用いて化学的機械的研磨処理後の基板上の遷移金属含有物を除去する工程A5である、請求項13又は14に記載の基板の処理方法。
- 前記工程Aが、前記工程A1であり、
前記工程A1の前又は前記工程A1の後に、更に、フッ酸と過酸化水素水との混合液、硫酸と過酸化水素水との混合液、アンモニア水と過酸化水素水との混合液、及び、塩酸と過酸化水素水との混合液からなる群から選択される溶液を用いて、前記工程A1で得られた前記基板を処理する工程Bを含有する、請求項15に記載の基板の処理方法。 - 前記工程A1と前記工程Bとを交互に繰り返し行う、請求項15に記載の基板の処理方法。
- 前記工程Aの後、更に、リンス液を用いて、前記工程Aで得られた前記基板に対してリンス処理を行う工程Cを含有する、請求項13~17のいずれか1項に記載の基板の処理方法。
- 前記リンス液が、フッ酸、塩酸、過酸化水素水、フッ酸と過酸化水素水との混合液、硫酸と過酸化水素水との混合液、アンモニア水と過酸化水素水との混合液、塩酸と過酸化水素水との混合液、二酸化炭素水、オゾン水、水素水、クエン酸水溶液、硫酸、アンモニア水、イソプロピルアルコール、次亜塩素酸水溶液、王水、超純水、硝酸、過塩素酸、シュウ酸水溶液、及び、オルト過ヨウ素酸水溶液からなる群から選択される溶液である、請求項18に記載の処理方法。
- 前記薬液の温度が20~75℃である、請求項13~19のいずれか1項に記載の処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020541089A JP7301055B2 (ja) | 2018-09-06 | 2019-08-09 | 薬液、基板の処理方法 |
KR1020217006600A KR102683037B1 (ko) | 2018-09-06 | 2019-08-09 | 약액, 기판의 처리 방법 |
US17/192,391 US11505743B2 (en) | 2018-09-06 | 2021-03-04 | Chemical solution and method for treating substrate |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018166714 | 2018-09-06 | ||
JP2018-166714 | 2018-09-06 | ||
JP2019136308 | 2019-07-24 | ||
JP2019-136308 | 2019-07-24 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/192,391 Continuation US11505743B2 (en) | 2018-09-06 | 2021-03-04 | Chemical solution and method for treating substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020049955A1 true WO2020049955A1 (ja) | 2020-03-12 |
Family
ID=69721786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2019/031627 WO2020049955A1 (ja) | 2018-09-06 | 2019-08-09 | 薬液、基板の処理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11505743B2 (ja) |
JP (2) | JP7301055B2 (ja) |
KR (1) | KR102683037B1 (ja) |
TW (1) | TW202010871A (ja) |
WO (1) | WO2020049955A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022114036A1 (ja) * | 2020-11-26 | 2022-06-02 | 株式会社トクヤマ | 半導体ウェハの処理液及びその製造方法 |
KR20230047416A (ko) | 2020-09-03 | 2023-04-07 | 후지필름 가부시키가이샤 | 조성물, 기판의 처리 방법 |
KR20230105686A (ko) * | 2020-12-18 | 2023-07-11 | 가부시끼가이샤 도꾸야마 | 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6798045B2 (ja) * | 2018-01-16 | 2020-12-09 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0246729A (ja) * | 1988-08-09 | 1990-02-16 | Mitsubishi Metal Corp | GaAsウェーハの鏡面研磨液および研磨方法 |
JPH08274057A (ja) * | 1995-03-30 | 1996-10-18 | Nec Corp | 半導体基板の洗浄装置及び洗浄方法並びに洗浄液の生成 方法 |
JP2003218084A (ja) * | 2002-01-24 | 2003-07-31 | Nec Electronics Corp | 除去液、半導体基板の洗浄方法および半導体装置の製造方法 |
JP2008547202A (ja) * | 2005-06-13 | 2008-12-25 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法 |
JP2009004807A (ja) * | 2008-09-12 | 2009-01-08 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置 |
CN102634801A (zh) * | 2012-04-27 | 2012-08-15 | 东莞市广华化工有限公司 | 一种低酸型酸性蚀刻再生剂及其酸性蚀刻母液 |
WO2016068183A1 (ja) * | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532389A (en) * | 1993-11-23 | 1996-07-02 | The Dow Chemical Company | Process for preparing alkylene oxides |
US5486627A (en) * | 1994-12-02 | 1996-01-23 | The Dow Chemical Company | Method for producing epoxides |
JP3585437B2 (ja) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
ITMI20011702A1 (it) * | 2001-08-03 | 2003-02-03 | Acraf | Soluzione disinfettante a base di ipoclorito di sodio e procedimento per prepararla |
KR100474537B1 (ko) * | 2002-07-16 | 2005-03-10 | 주식회사 하이닉스반도체 | 산화막용 cmp 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법 |
US9168318B2 (en) * | 2003-12-30 | 2015-10-27 | Oculus Innovative Sciences, Inc. | Oxidative reductive potential water solution and methods of using the same |
US7521406B2 (en) * | 2004-02-11 | 2009-04-21 | Mallinckrodt Baker, Inc | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
ITMI20080027A1 (it) * | 2008-01-09 | 2009-07-10 | Industrie De Nora Spa | Combinazione biocida per impiego in campo agricolo |
US8691289B2 (en) * | 2009-06-17 | 2014-04-08 | Apr Nanotechnologies S.A. | Methods of treating outer eye disorders using high ORP acid water and compositions thereof |
US8211800B2 (en) * | 2010-08-23 | 2012-07-03 | Kabushiki Kaisha Toshiba | Ru cap metal post cleaning method and cleaning chemical |
GB2488838A (en) * | 2011-03-11 | 2012-09-12 | Biomimetics Health Ind Ltd | A stable antimicrobial aqueous hypochlorous acid solution |
JP5742780B2 (ja) | 2012-05-17 | 2015-07-01 | 信越半導体株式会社 | アルカリエッチング液及びこれを用いたアルカリエッチング方法 |
JP2014044982A (ja) * | 2012-08-24 | 2014-03-13 | Fujimi Inc | 研磨用組成物 |
KR102113463B1 (ko) | 2016-01-22 | 2020-05-21 | 후지필름 가부시키가이샤 | 처리액 |
CN112153900B (zh) * | 2018-04-03 | 2022-09-13 | 本部三庆株式会社 | 由劣化次氯酸盐得到新型氯氧化物组合物的制造方法 |
US10881111B1 (en) * | 2019-11-26 | 2021-01-05 | NEOCL Co., Ltd. | Composition for providing room temperature long-term constant-concentration chlorine dioxide solution in aqueous medium and preparation method thereof |
-
2019
- 2019-08-09 WO PCT/JP2019/031627 patent/WO2020049955A1/ja active Application Filing
- 2019-08-09 JP JP2020541089A patent/JP7301055B2/ja active Active
- 2019-08-09 KR KR1020217006600A patent/KR102683037B1/ko active IP Right Grant
- 2019-08-27 TW TW108130517A patent/TW202010871A/zh unknown
-
2021
- 2021-03-04 US US17/192,391 patent/US11505743B2/en active Active
-
2023
- 2023-05-10 JP JP2023078048A patent/JP2023100924A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0246729A (ja) * | 1988-08-09 | 1990-02-16 | Mitsubishi Metal Corp | GaAsウェーハの鏡面研磨液および研磨方法 |
JPH08274057A (ja) * | 1995-03-30 | 1996-10-18 | Nec Corp | 半導体基板の洗浄装置及び洗浄方法並びに洗浄液の生成 方法 |
JP2003218084A (ja) * | 2002-01-24 | 2003-07-31 | Nec Electronics Corp | 除去液、半導体基板の洗浄方法および半導体装置の製造方法 |
JP2008547202A (ja) * | 2005-06-13 | 2008-12-25 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 金属ケイ化物の形成後の金属または金属合金の選択的な除去のための組成物および方法 |
JP2009004807A (ja) * | 2008-09-12 | 2009-01-08 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置 |
CN102634801A (zh) * | 2012-04-27 | 2012-08-15 | 东莞市广华化工有限公司 | 一种低酸型酸性蚀刻再生剂及其酸性蚀刻母液 |
WO2016068183A1 (ja) * | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230047416A (ko) | 2020-09-03 | 2023-04-07 | 후지필름 가부시키가이샤 | 조성물, 기판의 처리 방법 |
WO2022114036A1 (ja) * | 2020-11-26 | 2022-06-02 | 株式会社トクヤマ | 半導体ウェハの処理液及びその製造方法 |
KR20230105686A (ko) * | 2020-12-18 | 2023-07-11 | 가부시끼가이샤 도꾸야마 | 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 |
KR102658517B1 (ko) * | 2020-12-18 | 2024-04-17 | 가부시끼가이샤 도꾸야마 | 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 |
Also Published As
Publication number | Publication date |
---|---|
JP2023100924A (ja) | 2023-07-19 |
US11505743B2 (en) | 2022-11-22 |
KR20210039450A (ko) | 2021-04-09 |
TW202010871A (zh) | 2020-03-16 |
KR102683037B1 (ko) | 2024-07-09 |
JP7301055B2 (ja) | 2023-06-30 |
US20210189235A1 (en) | 2021-06-24 |
JPWO2020049955A1 (ja) | 2021-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7247277B2 (ja) | 薬液、基板の処理方法 | |
WO2020049955A1 (ja) | 薬液、基板の処理方法 | |
JP7513665B2 (ja) | 薬液、基板の処理方法 | |
JP2023107768A (ja) | 組成物、キット、基板の処理方法 | |
WO2022049973A1 (ja) | 組成物、基板の処理方法 | |
US20200357657A1 (en) | Method for treating substrate, method for manufacturing semiconductor device, and kit for treating substrate | |
WO2021153171A1 (ja) | 組成物、基板の処理方法 | |
TW202108753A (zh) | 清洗劑組成物 | |
WO2022050273A1 (ja) | 組成物、基板の処理方法 | |
WO2021187006A1 (ja) | 基板の処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 19858237 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2020541089 Country of ref document: JP Kind code of ref document: A Ref document number: 20217006600 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 19858237 Country of ref document: EP Kind code of ref document: A1 |