WO2020040915A1

WO2020040915A1 - High density plasma enhanced chemical vapor deposition chamber

Info

Publication number: WO2020040915A1
Application number: PCT/US2019/042684
Authority: WO
Inventors: Tae Kyung Won; Young Dong Lee; Chien-Teh Kao; Sanjay D. Yadav; Soo Young Choi; Suhail Anwar
Original assignee: Applied Materials, Inc.
Priority date: 2018-08-22
Filing date: 2019-07-19
Publication date: 2020-02-27
Also published as: TW202025213A; TWI723473B; KR102479923B1; JP2021535275A; JP7121446B2; KR20210013771A; CN112534557A

Abstract

The present disclosure relates to methods and apparatus for showerhead for a deposition chamber. In one embodiment, a showerhead for a plasma deposition chamber is provided that includes a plurality of perforated tiles each coupled to one or more of a plurality of support members, and a plurality of inductive couplers within the showerhead, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, wherein the support members provide precursor gases to a volume formed between the inductive couplers and the perforated tiles.

Description

HIGH DENSITY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION CHAMBER

BACKGROUND

Field

[0001] Embodiments of the present disclosure generally relate to an apparatus for processing large area substrates. More particularly, embodiments of the present disclosure relate to a chemical vapor deposition system for device fabrication.

Description of the Related Art

[0001] In the manufacture of solar panels or flat panel displays, many processes are employed to deposit thin films on substrates, such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and/or organic light emitting diode (OLED) substrates, to form electronic devices thereon. The deposition is generally accomplished by introducing a precursor gas into a vacuum chamber having a substrate disposed on a temperature controlled substrate support. The precursor gas is typically directed through a gas distribution plate situated near the top of the vacuum chamber. The precursor gas in the vacuum chamber may be energized (e.g., excited) into a plasma by applying a radio frequency (RF) power to a conductive showerhead disposed in the chamber from one or more RF sources coupled to the chamber. The excited gas reacts to form a layer of material on a surface of the substrate that is positioned on the temperature controlled substrate support.

[0002] The size of the substrates for forming the electronic devices now routinely exceeds 1 square meter in surface area. Uniformity in film thickness across these substrates is difficult to achieve. Film thickness uniformity becomes even more difficult as the substrate sizes increase. Traditionally, plasma is formed in the conventional chambers for ionizing gas atoms and forming radicals of a deposition gas which are useful for deposition of a film layer on substrates of this size using a capacitively coupled electrode arrangement. Lately, interest in inductively coupled plasma arrangements, historically utilized in deposition on round substrates or wafers, is being explored for use in deposition processes for these large substrates. However, inductive coupling utilizes dielectric materials as structural supporting components, and these materials do not have the structural strength to withstand structural loads created by the presence of atmospheric pressure against one side of a large area structural portion of the chamber on the atmospheric side thereof, and to vacuum pressure conditions on the other side thereof, as used in the conventional chambers for these larger substrates. Therefore, inductively coupled plasma systems have been undergoing development for large area substrate plasma processes. However, process uniformity, for example deposition thickness uniformity across the large substrate, is less than desirable.

[0003] There is a need, therefore, for an inductively coupled plasma source for use on large area substrates that is configured to improve film thickness uniformity across the deposition surface of a substrate.

SUMMARY

[0004] Embodiments of the disclosure include a method and apparatus for a showerhead, and a plasma deposition chamber having the showerhead, capable of forming one or more layers of a film on a large area substrate.

[0005] In one embodiment, a showerhead for a plasma deposition chamber is provided that includes a plurality of perforated tiles each coupled to one or more of a plurality of support members, and a plurality of inductive couplers within the showerhead, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of perforated tiles, wherein the support members provide precursor gases to a volume formed between the inductive couplers and the perforated tiles.

[0006] In another embodiment, plasma deposition chamber is provided that includes a showerhead having a plurality of perforated tiles, an inductive coupler corresponding to one or more of the plurality of perforated tiles, and a plurality of support members for supporting each of the perforated tiles, wherein one or more of the support members provides precursor gases to a volume formed between the inductive couplers and the perforated tiles.

[0007] In another embodiment, a plasma deposition chamber is provided that includes a showerhead having a plurality of perforated tiles each coupled to one or more of a plurality of support members, a plurality of dielectric plates, one of the plurality of dielectric plates corresponding to one of the plurality of perforated tiles, and a plurality of inductive couplers, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of dielectric plates, wherein the support members provide precursor gases to a volume formed between the inductive couplers and the perforated tiles. [0008] In another embodiment, a method for depositing films on a substrate is disclosed that includes flowing a precursor gas to a plurality of gas volumes of a showerhead, each of the gas volumes comprising a perforated tile and an inductive coupler in electrical communication with the respective gas volume, and varying the flow of the precursor gas into each of the gas volumes.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

[0010] Figure 1 is a cross sectional side view showing an illustrative processing chamber, according to one embodiment of the present disclosure.

[0011] Figure 2A is an enlarged view of a portion of the lid assembly of Figure 1.

[0012] Figure 2B is a top plan view of one embodiment of a coil.

[0013] Figure 3A is a bottom plan view of one embodiment of the face plate of the showerhead.

[0014] Figure 3B is a partial bottom plan view of another embodiment of the face plate of the showerhead.

[0015] Figure 4 is a schematic bottom plan view showing another embodiment of flow control of the showerhead.

[0016] Figure 5 is a cross sectional plan view of a support frame for the showerhead.

[0017] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.

DETAILED DESCRIPTION

[0018] Embodiments of the present disclosure include a processing system that is operable to deposit a plurality of layers on a large area substrate. A large area substrate as used herein is a large area substrate, such as a substrate having a surface area of typically about 1 square meter or greater. However, the substrate is not limited to any particular size or shape. In one aspect, the term “substrate” refers to any polygonal, squared, rectangular, curved or otherwise non-circular workpiece, such as a glass or polymer substrate used in the fabrication of flat panel displays, for example.

[0019] Herein, a showerhead is configured to flow gas therethrough and into a processing volume of a chamber in a number of independently controlled zones, in order to improve the uniformity of the processing of the surface of a substrate exposed to the gas in the processing zone. Additionally, each zone is configured with a plenum, one or more perforated plates between the plenum and the processing volume of the chamber, and a coil or portion of a coil dedicated to a zone or to an individual perforated plate. The plenum is formed between a dielectric window, a perforated plate, and a surrounding structure. Each plenum is configured to allow processing gas(es) to be flowed thereinto and distributed to result in a relatively uniform flow rate, or in some case tailored flow rate, of the gases through the perforated plate and into the processing volume. The plenum preferably has a thickness less than twice the thickness of a dark space of the a plasma formed of the process gas(es) at the pressures thereof within the plenum. An inductive coupler, preferably in the shape of a coil, is positioned behind the dielectric window, and it inductively couples energy through the dielectric window, plenum and perforated plate to strike and support a plasma in the processing volume. Additionally, in the region between adjacent perforated plates, an additional process gas flow is provided. The flow of the process gas(es) in each zone and through the region between the perforated plates is controlled to result in uniform or tailored gas flows to achieve desired process results on the substrate.

[0020] Embodiments of the disclosure include a high density plasma chemical vapor deposition (HDP CVD) processing chamber that is operable form one or more layers or films on a substrate. The processing chamber as disclosed herein is adapted to deliver energized species of a precursor gas that are generated in a plasma. The plasma may be generated by inductively coupling energy into a gas under vacuum. Embodiments disclosed herein may be adapted for use in chambers that are available from AKT America, Inc., a subsidiary of Applied Materials, Inc., Santa Clara, California. It is to be understood that the embodiments discussed herein may be practiced in chambers available from other manufacturers as well.

[0021] Figure 1 is a cross sectional side view showing an illustrative processing chamber 100, according to one embodiment of the present disclosure. An exemplary substrate 102 is shown within a chamber body 104. The processing chamber 100 also includes a lid assembly 106, and a pedestal or substrate support assembly 108. The lid assembly 106 is disposed at an upper end of the chamber body 104, and the substrate support assembly 108 is at least partially disposed within the chamber body 104. The substrate support assembly 108 is coupled to a shaft 110. The shaft 110 is coupled to a drive 112 that moves the substrate support assembly 108 vertically (in the Z direction) within the chamber body 104. The substrate support assembly 108 of the processing chamber 100 shown in Figure 1 is in a processing position. However, the substrate support assembly 108 may be lowered in the Z direction to a position adjacent to a transfer port 114. When lowered, lift pins 116, that are movably disposed in the substrate support assembly 108, contact a bottom 118 of the chamber body 104. When the lift pins 116 contact the bottom 118, the lift pins 116 can no longer move downwardly with the substrate support assembly 108, and maintain the substrate 102 in a fixed position relative as the substrate receiving surface 120 of the substrate support assembly 108 moves downwardly therefrom. Thereafter, an end effector or robot blade (not shown) is inserted through the transfer port 114, and between the substrate 102 and the substrate receiving surface 120, to transfer the substrate 102 out of the chamber body 104.

[0022] The lid assembly 106 may include a backing plate 122 that rests on the chamber body 104. The lid assembly 106 also includes a gas distribution assembly or showerhead 124. The showerhead 124 delivers process gases from a gas source to a processing region 126 between the showerhead 124 and the substrate 102. The showerhead 124 is also coupled to a cleaning gas source that provides cleaning gases, such as fluorine containing gases, to the processing region 126.

[0023] The showerhead 124 also functions as a plasma source 128. To function as the plasma source 128, the showerhead 124 includes one or more inductively coupled plasma generating components, or coils 130. Each of the one or more coils 130 may be a single coil 130, two coils 130, or more than two coils 130, are simply described as coils 130 hereafter. Each of the one or more coils 130 are coupled across a power source and ground 133. The showerhead 124 also includes a face plate 132 that comprises a plurality of discrete perforated tiles 134. The power source includes a match circuit or a tuning capability for adjusting electrical characteristics of the coils 130.

[0024] Each of the perforated tiles 134 are supported by a plurality of support members 136. Each of the one or more coils 130 or portions of the one or more coils 130 are positioned on or over a respective dielectric plate 138. An example of a coil 130 that is disposed over the dielectric plates 138 within the lid assembly 106 are more clearly shown in Figure 2A. A plurality of gas volumes 140 are defined by surfaces of the dielectric plates 138, the perforated tiles 134 and the support members 136. Each of the one or more coils 130 is configured to create an electromagnetic field that energizes the process gases into a plasma in the processing region 126 below the gas volumes 140 as gas is flowing into the gas volumes 140 and into the chamber volume therebelow through the adjacent perforated tile, process gases from the gas source are provided to each of the gas volumes 140 via conduits in the support members 136. The volume or flow rate of gas(es) entering and leaving the showerhead are controlled in different zones of the showerhead 124. Zone control of processing gases is provided by a plurality of flow controllers, such as mass flow controllers 142, 143 and 144 illustrated in Figure 1. For example, the flow rate of gases to peripheral or outer zones of the showerhead 124 is controlled by the flow controllers 142, 143, while the flow rate of gases to a central zone of the showerhead 124 is controlled by the flow controller 144. When chamber cleaning is required, cleaning gases from a cleaning gas source is flowed to each of the gas volumes 140 and thence into the processing volume 140 within which the cleaning gases are energized into ions, radicals, or both. The energized cleaning gases flow through the perforated tiles 134 and into the processing region 126 in order to clean chamber components.

[0025] Figure 2A is an enlarged view of a portion of the lid assembly 106 of Figure 1. As explained above, precursor gases from the gas source to the gas volumes 140 through first conduits 200 formed through the backing plate 122. Each of the first conduits 200 is coupled to second conduits 205 formed in the support members 136. The second conduits 205 provide the precursor gases to the gas volumes 140 at an opening 210. Some of the second conduits 205 provide gases to two adjacent gas volumes 140 (one of the second conduits 205 is shown in phantom in Figure 2A). Gas flows into representative gas volumes 140 are more clearly shown in Figure 4. The second conduits 205 may include a flow restrictor 215 to control flow to the gas volumes 140. The size of the flow restrictors 215 may be varied in order to control gas flow therethrough. For example, each of the flow restrictors 215 include an orifice of a particular size (e.g., diameter) that is utilized to control flow. Further, each of the flow restrictors 215 may be changed, as needed, to provide a larger orifice size, or a smaller orifice size, as needed, to control flow therethrough. [0026] As shown in Figure 2A, the perforated tiles 134 include a plurality of openings 220 extending therethrough. Each of the plurality of openings 220 allow gases to flow from the gas volumes 140 into the processing region 126, at desired flow rates due to the diameter of the openings 220 extending between the gas volume 140 and processing region 126. The openings 220, and/or rows and columns of the openings 220, may be sized differently and/or spaced differently in order to equalize gas flow through each of the openings 220 in one or more of the perforated tiles 134. Alternatively, the gas flow from each of the openings 220 may be non-uniform, depending on desired gas flow characteristics.

[0027] In addition to the perforated tiles 134, the face plate 132 includes a plurality of perforated strips 225 extending along sides of the perforated tiles 134. Each of the plurality of perforated strips 225 include a plurality of openings 230 that allow gas to flow from the second conduits 205 into a secondary plenum 235 and then into the processing region 126, to be energized into a plasma.

[0028] The support members 136 are coupled to the backing plate 122 by fasteners 240, such as bolts or screws. Each of the support members 136 support the perforated tiles 134 with an interface portion 245. Each of the interface portions 245 may be a ledge or shelf that supports a portion of the perimeter or an edge of the perforated tiles 134. In some embodiments, the interface portions 245 include a removable strip 250. The removable strips 250 are fastened to the support members 136 by a fastener (not shown), such as a bolt or screw. A portion of the interface portions 245 are L-shaped while another portion of the interface portions 245 are T-shaped. Each of the interface portions 245 also supports a perimeter or an edge of the perforated strips 225. One or more seals 265 are utilized to seal the gas volumes 140. For example, the seals 265 are elastomeric materials, such as an O-ring seal or a po!ytetrafluoroethyiene (PTFE) joint sealant material. The one or more seals 265 may be provided between the support members 136, and the perforated tiles 134 and the perforated strips 225. The removable strips 250 are utilized to support one or both of the perforated strips 225 and the perforated tiles 134 onto the support members 136. The removable strips 250 may be removed, as necessary, to replace one or both of a perforated strip 225 and a perforated tile 134.

[0029] In addition, each of the support members 136 support the dielectric plates 138 utilizing a shelf 270 extending therefrom (shown in Figure 2A). In embodiments of the showerhead 124/plasma source 128, the dielectric plates 138 are smaller in lateral surface area (X-Y plane) as compared to a surface area of the entire showerhead 124/plasma source 128. In order to support the dielectric plates 138, the shelves 270 are utilized. The reduced lateral surface area of the multiple dielectric plates 138 allows the use of dielectric materials as a physical barrier between the vacuum environment and plasma in the gas volume 140 and processing region 126 and the atmospheric environment in which the adjacent coil 130 is typically positioned, without imposing large stresses therein based on a large area supporting the atmospheric pressure load.

[0030] Seals 265 are used to seal the volumes 275 (at atmospheric or near atmospheric pressures) from the gas volumes 140 (which are at sub atmospheric pressures in the millitorr or less range during processing. Interface members 280 are shown extending from the support members 136, and fasteners 285 are utilized to fix, i.e. , push, the dielectric plates 138 against the seals 265 and the shelves 270. Seals 265 may also be utilized to seal a space between an outer perimeter of the perforated tiles 134 and the support members 136.

[0031] Materials for the showerhead 124/plasma source 128 are chosen based on one or more of electrical characteristics, strength and chemical stability. The coils 130 are made of an electrically conductive material. The backing plate 122 and the support members 136 are made of a material that is able to support the weight of the supported components and atmospheric pressure load, which may include a metal or other similar material. The backing plate 122 and the support members 136 can be made of a non- magnetic material (e.g., non-paramagnetic or non-ferromagnetic material), such as an aluminum material. The removable strips 250 are also formed of a non-magnetic material such as a metallic material, such as aluminum, or a ceramic material (e.g., alumina (AI2O3) or sapphire (AI2O3)). The perforated strips 225 and the perforated tiles 134 are made of a ceramic material, such as quartz, alumina or other similar material. The dielectric plates 138 are made of a quartz, alumina or sapphire materials.

[0032] In some embodiments, the support members 136 include one or more coolant channels 255 therein. The one or more coolant channels 255 are fluidly coupled to a fluid source 260 that is configured to provide a coolant medium to the coolant channels 255.

[0033] Figure 2B is a top plan view of one embodiment of a coil 130 positioned on the dielectric plates 138 found in the lid assembly 106. In one embodiment, the coil 130 configuration shown in Figure 2B may be used such that the illustrated coil configuration is formed over each of the dielectric plates 138 individually such that each planar coils is connected in series with adjacently positioned coils 130 in a desired pattern across the showerhead 124. The coil 130 includes a conductor pattern 290 that is a rectangular spiral shape. Electrical connections include an electrical input terminal 295A and an electrical output terminal 295B. Each of the one or more coils 130 of the showerhead 124 are connected in series and/or in parallel.

[0034] Figure 3A is a bottom plan view of one embodiment of the face plate 132 of the showerhead 124. As described above, the showerhead 124 is configured to include one or more zones, each with an independently controlled gas flow thereto. For example, the face plate 132 includes a central zone 300A, an intermediate zone 300B and one or more outer zones 300C and 300D. Gas flow to the zones is controlled by the flow controllers 142, 143 and 144 (shown in Figure 1 ).

[0035] Figure 3B is a partial bottom plan view of another embodiment of the face plate 132 of the showerhead 124. In this embodiment, the perforated tiles 134 are supported by the perforated strips 225. A fastener 305 is utilized to secure the perforated strips 225 and the removable strips 250 to the support members 136, which are not shown in this view as they are behind the perforated strips 225 and the removable strips 250.

[0036] Figure 4 is a schematic bottom plan view showing another embodiment of the showerhead 124 illustrating a gas flow injection pattern into the gas volumes 140 formed within the showerhead 124. A length 400 and a width 405 of a substrate is shown on the sides of the showerhead 124. Precursor flow to the gas volumes 140 may be provided uni-directionally as indicated by arrows 410 or bi-directionally as indicated by arrows 415. Precursor flow control may be provided by the flow controllers 142, 143 and 144 (shown in Figure 1 ). In addition, gas flow zones, such as edge zones 420, corner zones 425, and a central zone 430 may be provided by the flow controllers 142, 143 and 144 (shown in Figure 1 ). Flow rates of precursors to each of the gas volumes 140 and/or the zones may be adjusted by varying the sizes of one or a combination of the openings 220, the openings 230 and the flow restrictor 215 (all shown in Figure 2A).

[0037] Flow rates to each of the gas volumes 140 may be the same or different. Flow rates to the gas volumes 140 may be controlled by the mass flow controllers 142, 143 and 144 shown in Figure 1. Flow rates to the gas volumes 140 may additionally be controlled by the sizing of the flow restrictors 215 as described above. Flow rates to the processing region 126 may be controlled by the size of the openings 220 in the perforated tiles 134 as well as the size of the openings 230 in the perforated strips 225. Bi-directional flow or uni-directional flow into the gas volumes 140 is utilized, as needed, to provide sufficient gas flow to the processing region 126.

[0038] Methods to control gas flow include 1 ) multi-zone(center/edge/corner/any other zone) control using different flow rates from the mass flow controllers 142, 143 and 144; 2) flow control by different orifice size (sizes of the flow restrictors 215); 3) flow direction control into the gas volumes 140 (uni-directional or bi-directional; and 4) flow control by the size of the openings 220 in the perforated tiles 134, the number of the openings 220 in the perforated tiles 134 and/or the locations of the openings 220 in the perforated tiles 134.

[0039] Figure 5 is a bottom cross sectional view of a support frame 500 as viewed from the section line shown in Figure 1. The support frame 500 consists of the plurality of support members 136. The support frame 500 in the view of Figure 5 is cut along a section of the second conduits 205 that reveals various diameters (orifice sizes) of the flow restrictors 215. In one embodiment, the various orifices of each of the flow restrictors 215 may be changed or configured based on desired gas flow characteristics.

[0040] Each of the flow restrictors 215, in this embodiment, includes a first diameter portion 505, a second diameter portion 510, and a third diameter portion 515. Each of the diameters of the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 are different or the same. Each of the diameters may be chosen based on the desired flow characteristics for the showerhead 124. In one embodiment, the first diameter portion 505 here has the smallest diameter, the third diameter portion 515 here has the largest diameter, and the second diameter portion 510 has a diameter between that of the first diameter portion 505 and the third diameter portion 515. In the embodiment shown, a plurality of flow restrictors 215 having the first diameter portion 505 are shown in a central portion of the support frame 500 while a plurality of flow restrictors 215 having the third diameter portion 515 are shown in an outer portion of the support frame 500.

[0041] Additionally, a plurality of flow restrictors 215 having the second diameter portion 510 are shown in an intermediate zone between the central portion and the outer portion. In other embodiments, the locations of the flow restrictors 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be reversed in the portions of the support frame 500 as shown in Figure 5. Alternatively, the flow restrictors 215 having the first diameter portion 505, the second diameter portion 510, and the third diameter portion 515 may be located in various portions of the support frame 500 depending on the desired characteristics and control through the gas volumes 140. Uniform gas flow across the showerhead 124may be desirable in some embodiments. However, in other embodiments, the gas flow to each of the gas volumes 140 of the showerhead 124 may not be uniform. The non- uniform gas flow may be due to some physical structure(s) and/or geometry of the processing chamber 100. For example, it may be desirable to have more gas flow in portions of the showerhead 124 that are adjacent to the transfer port 114 (shown in Figure 1 ) as compared to gas flow in other portions of the showerhead 124.

[0042] Embodiments of the disclosure include a method and apparatus for a showerhead and a plasma deposition chamber having the showerhead capable of forming one or more layers of a film on a large area substrate. Plasma uniformity as well as gas (or precursor) flow is controlled by combination of the configurations of the individual perforated tiles 134, the coil 130 dedicated specific ones of the perforated tiles 134 and/or the flow controllers 142, 143 and 144 as well as varying sizes and/or positions of the flow restrictors 215.

[0043] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

Claims:

1. A plasma deposition chamber, comprising:

a showerhead having a plurality of perforated tiles each coupled to one or more of a plurality of support members;

a plurality of dielectric plates, one of the plurality of dielectric plates corresponding to one of the plurality of perforated tiles; and

a plurality of inductive couplers, wherein one inductive coupler of the plurality of inductive couplers corresponds to one of the plurality of dielectric plates, wherein the support members provide precursor gases to a volume formed between the inductive couplers and the perforated tiles.

2. The chamber of claim 1 , wherein each of the plurality of support members includes a conduit formed therein for flowing the precursor gases.

3. The chamber of claim 1 , wherein each of the plurality of support members includes coolant channel formed therein for flowing a coolant.

4. The chamber of claim 1 , further comprising a dielectric plate associated with each of the inductive couplers, the dielectric plate bounding one side of the volume.

5. The chamber of claim 1 , wherein each of the plurality of perforated tiles and the plurality of support members includes an interface portion.

6. The chamber of claim 5, wherein each interface portion includes a removable strip.

7. The chamber of claim 1 , wherein a portion of the plurality of perforated tiles are separated by a perforated strip.

8. The chamber of claim 7, wherein each perforated strip is coupled to a support member of the plurality of support members by an interface portion.

9. The chamber of claim 8, wherein each interface portion includes a removable strip.

10. A showerhead for a plasma deposition chamber, the showerhead comprising: a support member comprising a plurality of first supporting surfaces and a plurality of second supporting surfaces, wherein the plurality of first supporting surfaces are disposed a first distance from the plurality of second supporting surfaces in a first direction;

a plurality of gas delivery assemblies comprising a plurality of perforated tiles and a plurality of dielectric plates, wherein each of the plurality of gas delivery assemblies comprise:

a perforated tile disposed on a first supporting surface of the plurality of first supporting surfaces; and

a dielectric plate disposed on a second supporting surface of the plurality of second supporting surfaces,

wherein a gas volume is defined between a surface of the dielectric plate and a surface of the perforated tile;

a plurality of gas delivery ports, wherein each gas delivery port is configured to deliver a gas to a gas volume of the plurality of gas delivery assemblies; and

a coil disposed over one or more of the plurality of gas delivery assemblies within the showerhead.

11. The showerhead of claim 10, wherein the support member includes a conduit formed therein for flowing the precursor gases.

12. The showerhead of claim 10, wherein the support member includes a coolant channel formed therein for flowing a coolant.

13. The showerhead of claim 10, the dielectric plate bounds one side of the gas volume.

14. The showerhead of claim 10, wherein each of the plurality of perforated tiles and the support member include an interface portion.

15. The showerhead of claim 14, wherein each interface portion includes a removable strip, and wherein a portion of the plurality of perforated tiles are separated by a perforated strip.