CN114582693A - Plasma processing apparatus, end effector, edge ring and method thereof - Google Patents
Plasma processing apparatus, end effector, edge ring and method thereof Download PDFInfo
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- CN114582693A CN114582693A CN202011380087.1A CN202011380087A CN114582693A CN 114582693 A CN114582693 A CN 114582693A CN 202011380087 A CN202011380087 A CN 202011380087A CN 114582693 A CN114582693 A CN 114582693A
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- 239000012636 effector Substances 0.000 title claims abstract description 202
- 238000012545 processing Methods 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 169
- 235000012431 wafers Nutrition 0.000 claims description 192
- 230000008569 process Effects 0.000 claims description 21
- 230000007246 mechanism Effects 0.000 claims description 17
- 238000012544 monitoring process Methods 0.000 claims description 6
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- 238000003672 processing method Methods 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 13
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
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- 239000012495 reaction gas Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a plasma processing device, an end effector, an edge ring and a method thereof. A base used for bearing the wafer is arranged in a reaction cavity of the plasma processing device; an edge ring arranged around the outer side of the base and provided with a containing part for matching with the end effector; the end effector comprises a wafer bearing part for carrying a wafer and an edge ring bearing part for carrying the edge ring; the end effector passes through an opening in the wall of the reaction cavity to enter and exit the reaction cavity. The end effector of the plasma processing device can simultaneously carry the wafer and the edge ring to enter and exit the reaction cavity, and can also independently carry the wafer to enter and exit the reaction cavity for sheet conveying, or independently carry the edge ring to enter and exit the reaction cavity for edge ring replacement. The invention realizes the replacement of the edge ring under the condition of not opening the reaction cavity, obviously improves the working efficiency of the equipment, saves a large amount of labor and time and effectively reduces the use cost of the equipment.
Description
Technical Field
The invention belongs to the technical field of plasma etching, and particularly relates to a plasma processing device, an end effector, an edge ring and a method thereof.
Background
A plasma processing apparatus generally introduces a reaction gas into a reaction chamber to generate plasma, and performs processes such as plasma deposition and etching on a wafer placed in the reaction chamber.
Since the edge ring surrounding the susceptor in the reaction chamber is gradually eroded as the etching time increases due to the long-term exposure to the plasma etching environment, the edge ring needs to be replaced periodically. The existing maintenance method needs to open a reaction chamber of the plasma processing device and manually replace the edge ring, a large amount of manpower and time are consumed in the process, the working efficiency of equipment is reduced, and the use cost of the equipment is increased.
Disclosure of Invention
The invention provides a plasma processing device, an end effector, an edge ring and a method thereof, wherein the edge ring can be carried by the end effector to enter and exit a reaction cavity, and the edge ring can be replaced without opening the reaction cavity of the plasma processing device.
In order to achieve the above object, one aspect of the present invention provides a plasma processing apparatus comprising:
the reaction chamber, the cavity wall of the said reaction chamber has openings;
the base is positioned in the reaction cavity and used for bearing the wafer;
an edge ring disposed around the susceptor within the reaction chamber; the edge ring is provided with an accommodating part;
the end effector passes through the opening on the wall of the reaction cavity and enters and exits the reaction cavity; the end effector comprises a wafer bearing part and an edge ring bearing part; the wafer bearing part comprises a wafer bearing surface, and wafers are carried to enter and exit the reaction cavity through the wafer bearing surface; the edge ring bearing part comprises an edge ring bearing surface, and the edge ring is carried in and out of the reaction cavity by matching the edge ring bearing surface with the accommodating part of the edge ring.
Optionally, the edge ring carrier is located on both sides of the wafer carrier.
Optionally, when the end effector enters or exits the reaction chamber in the horizontal direction, the wafer bearing surface is not lower than the edge ring bearing surface.
Optionally, the end effector carries the wafer and the edge ring into and out of the reaction chamber simultaneously.
Optionally, the end effector carries the wafer or the edge ring into and out of the reaction chamber.
Optionally, the edge ring carrying portion penetrates into the receiving portion of the edge ring, the edge ring carrying face carrying the edge ring.
Optionally, the edge ring bearing part and the edge ring are respectively provided with a positioning mechanism, comprising:
the edge ring bearing surface is provided with a positioning pin, and the inner wall of the accommodating part is provided with a positioning groove corresponding to the positioning pin;
or, the inner wall of the containing part is provided with a positioning pin, and a positioning groove is formed in the position, corresponding to the positioning pin, of the edge ring bearing surface;
or the edge ring and the inside magnet that is equipped with of edge ring supporting part, just at least the edge ring or the magnet in the edge ring supporting part is the electro-magnet, and the magnetism through electric current on-off control electro-magnet has or not, realizes getting of edge ring is put.
Optionally, the end effector enters and exits the reaction chamber at different heights by being raised or lowered.
Optionally, the edge ring is a focus ring.
Another aspect of the present invention provides an end effector, which is suitable for use in any one of the above plasma processing apparatuses; the end effector comprises an effector body, the effector body is matched with an external mechanical arm, the end effector is driven by the mechanical arm, the end effector is characterized in that,
the end effector further comprises a wafer bearing part and an edge ring bearing part;
the wafer bearing part comprises a wafer bearing surface, and wafers are carried by the wafer bearing surface to enter and exit the reaction cavity of the processing device;
the edge ring bearing part comprises an edge ring bearing surface, and the edge ring is carried to enter and exit the treatment device reaction cavity through the matching of the edge ring bearing surface and the containing part of the edge ring.
Optionally, the wafer bearing portion is disposed at an end of the actuator body away from the robot arm, and the edge ring bearing portions are disposed on two sides of the wafer bearing portion respectively.
Optionally, a first positioning mechanism is disposed on the edge ring carrying portion, and the first positioning mechanism is matched with a corresponding positioning mechanism on the edge ring to position the edge ring when the edge ring is taken and placed.
Optionally, the first positioning mechanism includes: and the positioning pin or the positioning groove is arranged on the edge ring bearing surface, or the magnet is arranged in the edge ring bearing part.
Another technical solution of the present invention is to provide an edge ring, which is disposed around a susceptor in a reaction chamber of any one of the plasma processing apparatuses; the edge ring is provided with an accommodating part; and the end effector of the treatment device penetrates the edge ring bearing part into the accommodating part of the edge ring, and the edge ring is carried to enter and exit the reaction cavity of the treatment device through the matching of the edge ring bearing surface and the accommodating part of the edge ring.
Optionally, the receiving portion is an annular groove, or a discontinuous groove or through hole.
Optionally, the receiving portion opens on an outer wall of the edge ring;
or the accommodating part is arranged on a second boss, and the second boss is positioned on the top surface of the edge ring;
or the accommodating part is positioned between a covering ring and the first boss, and the covering ring is arranged around the edge ring below the first boss; the first boss is located on the outer wall of the edge ring.
Optionally, a second positioning mechanism is arranged on the edge ring, and the second positioning mechanism is matched with a corresponding positioning mechanism on the edge ring bearing part to position when the edge ring is taken and placed.
Optionally, the positioning mechanism comprises: and the positioning pin or the positioning groove is arranged on the inner wall of the accommodating part, or the magnet is arranged in the edge ring.
Another technical solution of the present invention is to provide a wafer processing method, which is applied to any one of the plasma processing apparatuses described above, and includes the steps of:
conveying the wafer into a reaction cavity of the processing device through the end effector, and carrying out plasma processing on the wafer in the reaction cavity; determining whether to replace the edge ring by monitoring the influence of the edge ring in the reaction chamber on the wafer processing result or monitoring the change degree of the geometric dimension of the edge ring after being corroded;
the end effector enters the reaction cavity, and the edge ring bearing part bears the edge ring and/or the wafer bearing part bears the wafer;
and the end effector exits the reaction cavity, the edge ring and the wafer are moved out of the reaction cavity simultaneously, or the edge ring or the wafer are moved out of the reaction cavity independently.
Another aspect of the present invention is to provide an edge ring replacement method, which is applied to any one of the plasma processing apparatuses described above,
a process for removing an edge ring from a reaction chamber of a processing apparatus, comprising:
the external mechanical arm drives the end effector to enable the edge ring bearing surface to be located at a second height, the end effector penetrates through an opening in the wall of the reaction chamber along the horizontal direction to enter the reaction chamber, and the edge ring bearing part penetrates through the accommodating part of the edge ring; raising the end effector to a first height such that the edge ring bearing surface bears the edge ring to lift the edge ring; the end effector carries the edge ring to pass through the opening on the reaction cavity wall along the horizontal direction and exit the reaction cavity;
a process for placing an edge ring into a reaction chamber of a slave processing apparatus, comprising:
the end effector carries the edge ring while the edge ring carrying surface is at a first height, and the end effector passes through an opening in the reaction chamber wall in a horizontal direction into the reaction chamber; lowering the end effector to a second height to place the edge ring around the periphery of the base; the end effector retreats along the horizontal direction, the edge ring bearing part retreats from the edge ring accommodating part, and the end effector retreats from the reaction cavity.
Optionally, further comprising the process of simultaneously removing the edge ring and the wafer from the reaction chamber of the processing apparatus:
the edge ring bearing surface is positioned at a second height, the end effector penetrates through an opening in the wall of the reaction cavity along the horizontal direction and enters the reaction cavity, the edge ring bearing part penetrates through the accommodating part of the edge ring, the wafer bearing part is positioned below the wafer jacked by the ejector pin, and the ejector pin is lowered and the wafer falls on the wafer bearing surface; and the end effector is lifted, the edge ring bearing surface is lifted to a first height, the edge ring bearing surface bears the edge ring and lifts the edge ring, and the end effector carries the edge ring and the wafer to exit the reaction chamber along the horizontal direction.
Alternatively,
further comprising the process of simultaneously placing an edge ring and a wafer into a reaction chamber of the processing apparatus:
the end effector carries an edge ring and a wafer, the edge ring carrying surface is located at a first height, and the end effector penetrates through an opening in the wall of the reaction chamber in the horizontal direction and enters the reaction chamber; lowering the end effector with the edge ring bearing surface lowered to a second height to place the edge ring in a position around the periphery of the base; the thimble rises to jack the wafer from the wafer bearing surface; the end effector retreats along the horizontal direction, the edge ring bearing part retreats from the edge ring accommodating part, and the end effector retreats from the reaction cavity; and descending the ejector pin to place the wafer on the base.
Another technical solution of the present invention is to provide a method for picking and placing a wafer, which is suitable for any one of the above plasma processing apparatuses,
a process for removing a wafer from a reaction chamber of the processing apparatus, comprising:
the edge ring bearing surface is positioned at a second height, the end effector penetrates through an opening in the wall of the reaction cavity along the horizontal direction and enters the reaction cavity, the edge ring bearing part of the end effector penetrates through the accommodating part of the edge ring, the wafer bearing surface is positioned below a wafer jacked up by a thimble, and the thimble is lowered to enable the wafer to fall on the wafer bearing surface; the end effector retreats along the horizontal direction, the edge ring bearing part retreats from the edge ring accommodating part, and the end effector carries the wafer to retreat from the reaction cavity;
a process for placing a wafer into a reaction chamber of the processing apparatus, comprising:
the end effector carries a wafer, meanwhile, the edge ring carrying surface is located at a second height, the end effector penetrates through an opening in the wall of the reaction cavity along the horizontal direction and enters the reaction cavity, the edge ring carrying surface penetrates through a containing part of the edge ring, and the ejector pin is lifted to jack up the wafer from the wafer carrying surface; the end effector retreats along the horizontal direction, the edge ring bearing part retreats from the edge ring accommodating part, and the end effector retreats from the reaction cavity; and descending the ejector pin to place the wafer on the base.
Compared with the prior art, the invention has the beneficial effects that:
an end effector in the plasma processing device can simultaneously carry the wafer and the edge ring to enter and exit the reaction cavity, and can also independently carry the wafer to enter and exit the reaction cavity for sheet conveying, or independently carry the edge ring to enter and exit the reaction cavity for edge ring replacement; the edge ring in the plasma processing device is provided with the accommodating part, and the edge ring is replaced under the condition that the reaction cavity is not opened through matching with the end effector, so that the working efficiency of equipment is obviously improved, a large amount of manpower and time are saved, and the use cost of the equipment is effectively reduced.
Drawings
FIG. 1 is a longitudinal sectional view of an inductively coupled plasma processing apparatus;
FIG. 2 is an enlarged view of a portion of the focus ring in the plasma processing apparatus;
FIG. 3 is an enlarged view of a portion of a grooved focus ring of the first embodiment of the present invention in a plasma processing apparatus;
FIG. 4 is a top view of a grooved focus ring in accordance with an exemplary embodiment of a first embodiment in cooperation with an end effector;
FIG. 5 is an enlarged view of a portion of a focus ring with a through hole formed therein in a plasma processing apparatus according to one embodiment;
FIG. 6 is a partially enlarged view of a focus ring having a first boss according to the second embodiment in a plasma processing apparatus;
FIG. 7 is a partial enlarged view of a focus ring having a second boss according to the third embodiment in a plasma processing apparatus;
FIG. 8 is a schematic structural view of an end effector according to the fourth embodiment;
FIG. 9 is a plan view of the end effector in the plasma processing apparatus according to the fourth embodiment;
FIG. 10 is a longitudinal cross-sectional view of FIG. 9;
FIG. 11 is an enlarged view of a portion of FIG. 10;
FIG. 12 is a schematic structural view of an end effector according to the fifth embodiment;
FIG. 13 is a plan view of the end effector in a plasma processing apparatus according to the fifth embodiment;
FIG. 14 is a longitudinal cross-sectional view of FIG. 13;
FIG. 15 is a schematic structural view of an end effector according to the sixth embodiment;
FIG. 16 is a plan view of the end effector in a plasma processing apparatus according to the sixth embodiment;
FIG. 17 is a longitudinal cross-sectional view of FIG. 16;
fig. 18 is a schematic view of a structure of an end effector provided with a positioning mechanism and a focus ring.
Detailed Description
Referring to fig. 1, the plasma processing apparatus of the present invention is provided with a vacuum reaction chamber 100; an opening is formed in a wall 150 of the reaction chamber, and the end effector 400 is driven by an external robot (not shown) to pass through the opening to enter and exit the reaction chamber 100; a base 200 is disposed at the bottom of the reaction chamber 100 for supporting and fixing a wafer to be processed; at least one edge ring is arranged around the base and used for adjusting the temperature, airflow or plasma distribution of the edge area of the wafer, and the edge ring has the function of improving the wafer processing performance of the plasma processing device. The edge ring includes at least one of a focus ring, a cover ring, and a spacer ring. The following description will be made by taking a focus ring as an example.
The plasma processing apparatus provided by the present invention may be an inductively coupled plasma processing apparatus (ICP apparatus) or a capacitively coupled plasma processing apparatus (CCP apparatus), and the ICP apparatus is a specific example and the apparatus of the present invention will be described in detail. Specifically, as shown in fig. 1, an opening is formed on the chamber wall 150 of the vacuum reaction chamber 100, and the end effector 400 passes through the opening to enter and exit the reaction chamber; a base 200 is disposed at the bottom of the vacuum reaction chamber 100 for supporting and fixing a wafer to be processed; a focusing ring 300 is arranged around the base 200; an insulation window 500 is arranged at the upper end of the reaction cavity wall 150, and an inductive coupling coil 550 is arranged above the insulation window 500; a gas injection port 600 is formed at the upper end of the reaction chamber wall 150 or the center of the insulating window 500 for injecting a reaction gas into the vacuum reaction chamber 100. Applying radio-frequency voltage of a radio-frequency power source to the inductive coupling coil 550, and coupling the inductive coupling coil 550 in the reaction cavity to generate an alternating electric field so as to excite the reaction gas to generate plasma; the inner side of the reaction chamber wall 150 is provided with an inner liner 650 for protecting the reaction chamber wall 150 from the plasma. Active particles in the plasma generate physical and chemical reactions on the surface of the wafer to be processed, the appearance of the surface of the wafer is changed, and the etching process is completed.
Fig. 2 is a partial enlarged view of a focus ring in a plasma processing apparatus. As shown in fig. 2, a lower ground ring 700 and a shield ring 750 are disposed below the focus ring 300; wherein the lower ground ring 700 is used for forming a radio frequency ground loop in the reaction chamber; the shielding ring 750 is used for shielding the radio frequency signal applied to the base 200 in the base; a cover ring 800 is disposed around the outside of the focus ring 300.
In order to realize automatic replacement of the focus ring without opening the reaction chamber and improve the working efficiency of the device, in the plasma processing apparatus provided by the invention, the end effector 400 comprises a wafer bearing part and a focus ring bearing part; the end effector 400 moves the wafer into and out of the reaction chamber 100 in a horizontal direction by carrying the wafer by the wafer carrier, lifts the focus ring in a vertical direction by the focus ring carrier, and unloads the focus ring after moving the wafer into or out of the reaction chamber 100 in a horizontal direction. The focusing ring bearing parts are arranged on two sides of the wafer bearing part; the wafer bearing part further comprises a wafer bearing surface for bearing a wafer; the focus ring carrying part further comprises a focus ring carrying surface for carrying the focus ring 300; the wafer bearing surface is not lower than the focusing ring bearing surface. The focus ring 300 is provided with a receiving portion for cooperating with the focus ring carrying portion, and specifically, the focus ring carrying portion penetrates into the receiving portion, and carries the focus ring 300 through a focus ring carrying surface. The receiving portion may have a circular groove structure, a discontinuous groove structure, or a through hole structure, but is not limited thereto.
The following describes the arrangement of the accommodating portion of the focus ring in the plasma processing apparatus of the present invention in detail by taking the focus ring as an example.
Example one
FIG. 3 is a partial enlarged view of a grooved focus ring in a plasma processing apparatus according to the first embodiment. As shown in fig. 3, the focus ring 310 is disposed around the base 200, and a lower ground ring 700 and a shield ring 750 are disposed below the focus ring 310; wherein the lower ground ring 700 is used to form a radio frequency ground loop in the reaction chamber; the shielding ring 750 is used for shielding the radio frequency signal applied to the base 200 in the base; a cover ring 800 is disposed around the outside of the focus ring 300.
As shown in fig. 3, in the present embodiment, an annular groove is formed on an outer wall of the focus ring 310 as a receiving portion 311; the end effector includes an edge ring bearing, in this embodiment, a focus ring bearing a, which moves horizontally and penetrates into the annular groove, the focus ring bearings a are located at both sides of the focus ring 310, as shown in fig. 4, and the end effector 400 is raised by the driving of the external robot 850, so that the focus ring 310 is lifted (as shown by the arrow in fig. 3), and the focus ring 310 moves along with the end effector 400. Fig. 4 is a top view of a grooved focus ring in cooperation with an end effector according to one embodiment.
Or, a section of groove is respectively arranged on the outer walls of the two sides of the focusing ring 310 to serve as the accommodating part 311, and the section of groove is arranged along the circumferential direction of the wall surface of the focusing ring; the focusing ring bearing parts a move horizontally and penetrate into the corresponding groove sections, and the focusing ring bearing parts are positioned on two sides of the focusing ring 310 to realize the matching of the focusing ring and the end effector. A focusing ring 310 with recessed sections on both sides as receptacles 311 is shown in a top view of an end effector assembly, as also shown in fig. 4.
In this embodiment, the focusing ring 310 may further have through holes as accommodating portions 311 formed on the two side chamber walls, the through holes are horizontally disposed and correspond to the horizontal moving direction of the end effector, and the focusing ring bearing portion a moves horizontally and penetrates into the corresponding through holes, as shown in fig. 5; the focusing ring bearing parts a are positioned at two sides of the focusing ring 310, so that the focusing ring is matched with the end effector. FIG. 5 is a partial enlarged view of a focus ring with a through hole formed therein in a plasma processing apparatus according to an embodiment.
Example two
Fig. 6 is a partially enlarged view of the focus ring provided with the first boss in the plasma processing apparatus according to the second embodiment. As shown in fig. 6, in this embodiment, an annular first boss 322 is disposed on an outer wall of the focus ring 320, the first boss 322 extends out of the outer wall of the focus ring and is located above the cover ring 800, and an annular gap is formed between the first boss 322 and the cover ring 800 as an accommodating portion 321; the focusing ring bearing part a moves horizontally and penetrates into the annular gap; the focus ring carrying portions a are located on both sides of the focus ring 320, and the end effector 400 is lifted by the external robot 850, so that the focus ring 320 is lifted (in the direction indicated by the arrow in fig. 6), and the focus ring 320 moves along with the end effector 400, thereby achieving the engagement between the focus ring and the end effector.
Or, two sections of first bosses 322 are respectively disposed on the outer walls of the two sides of the focus ring 320, two sections of gaps are formed between the first bosses and the cover ring 800 to serve as accommodating portions 321, and the bearing portion a of the focus ring moves horizontally and penetrates into the corresponding gap to realize the matching of the focus ring and the end effector, as shown in fig. 6.
With reference to the first and second embodiments, in the first embodiment of the present invention, the groove serving as the accommodating portion may be further formed on the outer wall of the first boss.
EXAMPLE III
FIG. 7 is a partially enlarged view of a focus ring provided with a second boss in a plasma processing apparatus according to a third embodiment. As shown in fig. 7, in this embodiment, two second bosses 332 are disposed on the top surface of the ring body of the focus ring 330, the two second bosses 332 are distributed on two sides of the focus ring 330 (fig. 7 is an enlarged view of one side structure), each second boss 332 is provided with a through hole, and the through hole is disposed along the horizontal direction and corresponds to the horizontal moving direction of the end effector; the focusing ring bearing part a moves horizontally and penetrates into the corresponding through hole, and the end effector 400 is lifted under the driving of an external robot arm, so that the focusing ring 330 is lifted (in the direction shown by the arrow in the figure), and the focusing ring 330 moves along with the end effector 400, so that the focusing ring is matched with the end effector.
The following description will describe the structure of the focus ring carrying part of the end effector of the plasma processing apparatus as an embodiment.
Example four
Fig. 8 is a schematic structural view of the end effector according to the fourth embodiment. As shown in fig. 8, in the embodiment, the end effector 410 includes an effector body 411, and one end of the effector body 411 is connected to an external robot arm, so that the robot arm drives the end effector.
The end effector 410 further includes a wafer carrier 412; the wafer supporting portion 412 is disposed at an end of the actuator body 411 away from the robot arm, and an upper surface thereof is used as a wafer supporting surface α 1 for supporting a wafer, as shown in fig. 8.
The end effector 410 further includes a focus ring holder 413, and the focus ring holder 413 is disposed on two sides of the wafer holder 412. The focus ring carrying part 413 further includes an insert 4130 and a connecting member 4131; the insert 4130 is used to penetrate into the accommodating portion of the focus ring 300, and the upper surface of the insert 4130 in this embodiment is the focus ring bearing surface β 1 for bearing the focus ring; the connecting member 4131 is used to connect the insert 4130 and the wafer carrier 412.
In the focusing ring supporting part 413 of this embodiment, the front part of the connecting member 4131 and the insert member 4130 form a groove-like structure, and the notches of the focusing ring supporting parts 413 at both sides are oppositely arranged; the upper groove wall and the side wall of the groove structure belong to the connecting piece 4131, and the rear part of the connecting piece 4131 is an extension section of the upper groove wall, the extension section is connected with a crank arm type design at one end of the wafer bearing part 412, so that the focusing ring bearing part 413 extends out of the wafer bearing part 412 and is distributed on two sides of the wafer bearing part 412; the lower groove wall of the groove structure serves as the insert 4130, the focus ring carrying surface β 1 is lower than the wafer carrying surface α 1, and the end effector 410 is suitable for taking and placing a wafer and/or a focus ring in an inductively coupled plasma processing apparatus (ICP apparatus) or a wafer and/or a focus ring in a capacitively coupled plasma processing apparatus (CCP apparatus).
In the ICP apparatus or the CCP apparatus, the end effector 410 in the present embodiment is used to replace the focus ring 310 having a recess as a receiving portion in the first embodiment or the focus ring 320 having a gap between the first boss and the cover ring as a receiving portion in the second embodiment; fig. 9 is a top view of the end effector of the fourth embodiment in a plasma processing apparatus, wherein when the wafer 900 is picked and placed, the wafer 900 is placed on the upper surface of the end effector 410; fig. 10 is a cross-sectional view taken along a-a of fig. 9, i.e., a longitudinal cross-sectional view, in which wafer 900 is transferred between end effector 410 and base 200 by raising or lowering of thimble 950 (described in detail below); fig. 11 is a partially enlarged view of fig. 10.
EXAMPLE five
The invention does not limit the concrete structure of the connecting piece, and can be adjusted according to the requirement in practical application.
Fig. 12 is a schematic structural view of an end effector according to the fifth embodiment. As shown in fig. 12, the end effector 420 of the present embodiment includes an effector body 421, a wafer supporting portion 422, and a focus ring supporting portion 423; the wafer carrier 422 has a wafer carrying surface α 2 on its upper surface for carrying a wafer.
The focus ring carrier 423 comprises an insert 4230 and a coupling 4231; the insert 4230 is adapted to penetrate into the receiving portion of the focus ring 300, and the insert 4230 has an upper surface thereof as the focus ring bearing surface β 2 for bearing the focus ring, as shown in fig. 12.
The link 4231 is L-shaped, an upper plate thereof is connected to the wafer supporting portion 422, a side plate thereof faces downward and is connected to the insert 4230, the focusing ring supporting surface β 2 is lower than the wafer supporting surface α 1, and the end effector 420 is suitable for taking and placing a wafer and/or a focusing ring in an inductively coupled plasma processing apparatus (ICP apparatus) or a wafer and/or a focusing ring in a capacitively coupled plasma processing apparatus (CCP apparatus).
In the ICP apparatus or the CCP apparatus, the end effector 420 in the present embodiment is used to replace the focus ring 310 having a recess as a receiving portion in the first embodiment or the focus ring 320 having a gap between the first boss and the cover ring as a receiving portion in the second embodiment; FIG. 13 is a plan view of the end effector in a plasma processing apparatus according to the fifth embodiment; fig. 14 is a longitudinal sectional view of fig. 13.
EXAMPLE six
Fig. 15 is a schematic structural diagram of an end effector according to a sixth embodiment, and the end effector adjusts a wafer carrying portion and a focus ring carrying portion according to a fourth embodiment. As shown in fig. 15, in the embodiment, one end of the actuator body 431 of the end effector 430 is connected to an external robot arm, and the end effector is driven by the robot arm; the other end of the actuator body 431 is connected to the wafer carrying portion 432.
The wafer carrier 432 is L-shaped and includes a first portion 4320 and a second portion 4321. The first portion 4320, the upper surface of which is a wafer carrying surface α 3, is used for carrying a wafer, as shown in FIG. 15. The first portion 4320 and the actuator body 431 are connected by a second portion 4321.
A focus ring supporting part 433 connected to the actuator body 431 and having a crank arm shape at the rear thereof, for extending the focus ring supporting part 433 out of the actuator body and distributing the focus ring supporting part at both sides of the wafer supporting part 432; the front part of the focusing ring is designed into a long strip shape and is used for penetrating into the focusing ring accommodating part; the upper surface of the front part of the focus ring support 433 is a focus ring support surface β 3 for supporting a focus ring.
In this embodiment, the second portion 4321 may be disposed vertically upward or obliquely upward, the first portion 4320 is connected to an upper end of the second portion 4321, the actuator body 431 is connected to a lower end of the second portion 4321, the first portion 4320 is higher than the actuator body 431, and the wafer carrying surface α 3 is higher than the focus ring carrying surface β 3, and the end effector 430 is suitable for taking and placing a wafer and/or a focus ring in an inductively coupled plasma processing apparatus (ICP apparatus) or a capacitively coupled plasma processing apparatus (CCP apparatus).
In this embodiment, the front portion of the focus ring supporting portion 433 is designed to be a long strip, so that the matching capability of the end effector and the focus ring is improved, and the application range is wide. In the ICP apparatus or the CCP apparatus, the end effector 410 in the present embodiment may be used to replace any one of the focus rings described in the first, second, and third embodiments; FIG. 16 is a plan view of the end effector in a plasma processing apparatus according to the sixth embodiment; fig. 17 is a longitudinal sectional view of fig. 16.
The above is a detailed description of the structures of the focus ring and the end effector in the plasma processing apparatus provided by the present invention. In the present invention, the focusing ring 300 and the end effector 400 are further provided with a positioning mechanism correspondingly for facilitating the positioning of the end effector, specifically, as shown in fig. 18, a positioning pin 1000 is provided on the bearing surface of the focusing ring, and a positioning groove (not shown) is provided on the inner wall of the accommodating portion corresponding to the positioning pin; or, the inner wall of the containing part is provided with a positioning pin 1000, and a positioning groove is arranged on the bearing surface of the focusing ring corresponding to the positioning pin; or a magnet is arranged inside the focusing ring, an electromagnet is arranged at a corresponding position inside the focusing ring bearing part, the electromagnet has magnetism when being electrified and is attracted with the magnet, the focusing ring bearing part takes up the focusing ring, the magnetism disappears when the electromagnet is powered off and is separated from the magnet, and the focusing ring bearing part puts down the focusing ring; similarly, the electromagnet is arranged in the focusing ring, and the magnet is arranged at the corresponding position in the bearing part of the focusing ring, so that the effect can be realized. FIG. 18 is a schematic view of an end effector with a positioning mechanism and a focus ring.
In the process of processing the wafer by the plasma processing device provided by the invention, the method for taking and placing the wafer 900 by the end effector 400 is as follows:
the process of placing the wafer 900 into the reaction chamber 100 includes: the height of the end effector 400 is adjusted by an outer wall robot arm, so that when the end effector 400 enters the reaction chamber 100, the wafer bearing part is positioned above the pedestal 200, and the focus ring bearing part can horizontally penetrate into the accommodating part of the focus ring; placing the wafer 900 on the wafer carrying surface, the end effector 400 carrying the wafer 900 horizontally through the opening in the chamber wall 150 into the reaction chamber 100; the focus ring carrier penetrates into the accommodating portion of the focus ring, and the thimble 950 is lifted to lift the wafer 900 from the wafer carrying surface; the end effector 400 retreats in the horizontal direction, so that the focus ring carrying part exits from the focus ring accommodating part, and the end effector 400 exits from the reaction chamber 100; the thimble 950 is lowered to place the wafer 900 on the susceptor 200, and the end effector 400 places the wafer 900 into the processing apparatus.
The process of removing the wafer 900 from the reaction chamber 100 includes: in the reaction chamber 100, the lift pin 950 is lifted up, so as to lift up the wafer 900 on the susceptor 200; the height of the end effector 400 is adjusted by an outer wall robot arm, so that when the end effector 400 enters the reaction chamber 100, the wafer bearing part is positioned between the pedestal 200 and the jacked wafer 900, and the focus ring bearing part can horizontally penetrate into the accommodating part of the focus ring; the end effector 400 horizontally penetrates through an opening in the wall 150 of the reaction chamber and enters the reaction chamber 100, a focus ring carrying portion of the end effector 400 penetrates through a containing portion of the focus ring, the wafer carrying surface is located below the wafer 900 lifted by the ejector pin, and the ejector pin 950 and the wafer 900 are lowered to fall on the wafer carrying surface; the end effector 400 retreats in the horizontal direction, the focus ring carrier exits the focus ring holder, the end effector 400 carries the wafer 900 and exits the reaction chamber 100, and the end effector 400 takes the wafer 900 out of the processing apparatus.
Conveying the wafer 900 into the reaction chamber 100 of the processing apparatus by the end effector 400, and performing plasma processing on the wafer 900 in the reaction chamber 100; monitoring the influence of the focusing ring 300 in the reaction chamber on the processing result of the wafer 900, or monitoring the change degree of the geometric dimension of the focusing ring 300 after being eroded, and judging whether to replace the focusing ring 300; if the wafer 900 has a good processing result or the change of the geometric dimension of the focus ring 300 is slight, the focus ring 300 does not need to be replaced temporarily; if the wafer 900 process results are not satisfactory or the geometry of the focus ring 300 changes significantly, the focus ring 300 needs to be replaced in a timely manner.
According to the plasma processing device provided by the invention, the end effector 400 is matched with the focusing ring 300, so that the focusing ring 300 can be replaced without opening a reaction cavity; the method for replacing the focusing ring 300 by the end effector 400 is as follows:
the process of removing the focus ring 300 from the reaction chamber 100 includes: the external mechanical arm adjusts the height of the end effector 400, so that when the end effector 400 enters the reaction chamber 100, the bearing part of the focusing ring can horizontally penetrate into the accommodating part of the focusing ring; the end effector 400 horizontally passes through the opening on the wall 150 of the reaction chamber and enters the reaction chamber 100, and the focusing ring bearing part passes through the accommodating part of the focusing ring; the end effector 400 is raised to cause the focusing ring carrying surface to carry the focusing ring and lift the focusing ring, and the focusing ring 300 is located above the upper surface of the base 200; the end effector 400 carries the focus ring 300 horizontally through an opening in the reaction chamber wall 150 and out of the reaction chamber 100, and the end effector 400 removes the focus ring 300 from the processing apparatus.
The process of placing the focus ring 300 into the reaction chamber 100 includes: the outer wall robot adjusts the height of the end effector 400 so that the focusing ring 300 can be located above the upper surface of the susceptor 200 when the end effector 400 enters the reaction chamber 100; the focusing ring carrier penetrates into the focusing ring accommodating part, and the end effector 400 carries the focusing ring to pass through the opening on the reaction chamber wall 150 and enter the reaction chamber 100 along the horizontal direction; lowering the end effector 100 to place the focus ring 300 in a position around the periphery of the base; the end effector 400 retreats in the horizontal direction, the focus ring carrying portion exits from the focus ring accommodating portion, the end effector 400 exits from the reaction chamber 100, and the end effector 400 puts the focus ring 300 into the processing apparatus.
According to the plasma processing device provided by the invention, the end effector 400 matched with the focusing ring 300 is arranged, so that a wafer or the focusing ring can be independently taken and placed, and the focusing ring 300 and the wafer 900 can be simultaneously taken out or placed into the processing device without opening a reaction cavity; the end effector 400 is configured to remove the focus ring 300 and the wafer 900 from the reaction chamber 100 simultaneously as follows:
in the reaction chamber 100, the lift pin 950 is lifted up, so as to lift up the wafer 900 on the susceptor 200; the outer wall robot arm adjusts the height of the end effector 400, so that when the end effector 400 enters the reaction chamber 100, the wafer bearing part is located between the pedestal 200 and the jacked wafer 900, and the focus ring bearing part can horizontally penetrate into the accommodating part of the focus ring; the end effector 400 horizontally passes through an opening in the reaction chamber wall 150 and enters the reaction chamber 100, the focus ring carrying portion penetrates through a containing portion of the focus ring, the wafer carrying portion is located below the wafer 900 lifted by the ejector pin 950, and the ejector pin 950 and the wafer 900 are lowered to fall on the wafer carrying surface; the end effector 400 is raised to make the focusing ring carrying surface carry the focusing ring 300 and lift the focusing ring 300, and the focusing ring 300 is located above the upper surface of the base 200; the end effector 400 carries the focus ring 300 and the wafer 900 out of the reaction chamber 100 in a horizontal direction, and the end effector 400 simultaneously takes the focus ring 300 and the wafer 900 out of the processing apparatus.
In the plasma processing apparatus of the present invention, the end effector 400 is configured to simultaneously place the focus ring 300 and the wafer 900 into the reaction chamber 100 by the following method:
placing the wafer 900 on a wafer carrying surface, wherein the focusing ring carrying part penetrates into the accommodating part of the focusing ring; the external robot adjusts the height of the end effector 400 so that the focus ring 300 is located above the upper surface of the susceptor 200 when entering the reaction chamber 100; the end effector 400 carries the focus ring 300 and the wafer 900 horizontally through an opening in the reaction chamber wall 150 into the reaction chamber 100; the end effector 400 is lowered to place the focus ring 300 in a position around the periphery of the base 200; the thimble 950 is lifted to jack up the wafer 900 from the wafer bearing surface; the end effector 400 retreats in the horizontal direction, the focus ring carrying part exits from the focus ring accommodating part, and the end effector 400 exits from the reaction chamber 100; the thimble 950 is lowered to place the wafer 900 on the susceptor 200, and the end effector 400 simultaneously places the focus ring 300 and the wafer 900 into the processing apparatus.
The focusing ring structure described above is also applicable to other edge rings disposed around the base, and when an edge ring needs to be replaced periodically or aperiodically, the edge ring may be provided with the focusing ring accommodating portion as described above, and the end effector described above is used to realize automatic switching of the edge ring without opening the reaction chamber.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (23)
1. A plasma processing apparatus, characterized in that the processing apparatus comprises:
the reaction chamber, the cavity wall of the said reaction chamber has openings;
the base is positioned in the reaction cavity and used for bearing the wafer;
an edge ring disposed around the susceptor within the reaction chamber; the edge ring is provided with an accommodating part;
the end effector passes through the opening on the wall of the reaction cavity and enters and exits the reaction cavity; the end effector comprises a wafer bearing part and an edge ring bearing part; the wafer bearing part comprises a wafer bearing surface, and wafers are carried to enter and exit the reaction cavity through the wafer bearing surface; the edge ring bearing part comprises an edge ring bearing surface, and the edge ring is carried in and out of the reaction cavity by matching the edge ring bearing surface with the accommodating part of the edge ring.
2. The plasma processing apparatus of claim 1 wherein the edge ring carrier is positioned on both sides of the wafer carrier.
3. The plasma processing apparatus of claim 2 wherein the wafer carrying surface is not lower than the edge ring carrying surface when the end effector is moved into and out of the chamber in a horizontal direction.
4. The plasma processing apparatus of claim 1 wherein the end effector carries the wafer and the edge ring into and out of the reaction chamber simultaneously.
5. The plasma processing apparatus of claim 1 wherein the end effector carries the wafer or the edge ring into and out of the reaction chamber.
6. The plasma processing apparatus of claim 4 or 5, wherein the edge ring carrier penetrates into a receptacle of the edge ring, the edge ring carrier carrying the edge ring.
7. The plasma processing apparatus as claimed in claim 6, wherein the edge ring carrying portion and the edge ring are respectively provided with a positioning mechanism comprising:
the edge ring bearing surface is provided with a positioning pin, and the inner wall of the accommodating part is provided with a positioning groove corresponding to the positioning pin;
or the inner wall of the accommodating part is provided with a positioning pin, and a positioning groove is formed in the position, corresponding to the positioning pin, of the edge ring bearing surface;
or the edge ring and the inside magnet that is equipped with of edge ring supporting part, just at least the edge ring or the magnet in the edge ring supporting part is the electro-magnet, and the magnetism through electric current on-off control electro-magnet has or not, realizes getting of edge ring is put.
8. The plasma processing apparatus of claim 1 wherein the end effector accesses the reaction chamber by raising or lowering it at different heights.
9. The plasma processing apparatus of claim 1 wherein the edge ring is a focus ring.
10. An end effector for use in the plasma processing apparatus according to any one of claims 1 to 9, comprising an effector body that is engaged with an external robot arm by which the end effector is driven,
the end effector further comprises a wafer bearing part and an edge ring bearing part;
the wafer bearing part comprises a wafer bearing surface, and wafers are carried by the wafer bearing surface to enter and exit the reaction cavity of the processing device;
the edge ring bearing part comprises an edge ring bearing surface, and the edge ring is carried to enter and exit the treatment device reaction cavity through the matching of the edge ring bearing surface and the containing part of the edge ring.
11. The end effector as claimed in claim 10, wherein the wafer carrier is disposed at an end of the effector body away from the robot arm, and the edge ring carrier is disposed at two sides of the wafer carrier.
12. The end effector as claimed in claim 10, wherein the edge ring carrier has first locating means thereon for cooperating with corresponding locating means on the edge ring to locate when the edge ring is picked and placed.
13. The end effector as set forth in claim 12 wherein said first positioning mechanism comprises: and the positioning pin or the positioning groove is arranged on the edge ring bearing surface, or the magnet is arranged in the edge ring bearing part.
14. An edge ring disposed around a susceptor in a reaction chamber of a plasma processing apparatus according to any one of claims 1 to 9, wherein the edge ring is provided with a receiving portion; and the end effector of the treatment device penetrates the edge ring bearing part into the accommodating part of the edge ring, and the edge ring is carried to enter and exit the reaction cavity of the treatment device through the matching of the edge ring bearing surface and the accommodating part of the edge ring.
15. The edge ring of claim 14, wherein the receptacle is an annular groove, or a discontinuous groove or a through hole.
16. The edge ring of claim 14, wherein the receptacle opens onto an outer wall of the edge ring;
or the accommodating part is arranged on a second boss, and the second boss is positioned on the top surface of the edge ring; or the accommodating part is positioned between a covering ring and the first boss, and the covering ring is arranged around the edge ring below the first boss; the first boss is located on the outer wall of the edge ring.
17. The edge ring of claim 14, wherein a second positioning mechanism is provided on the edge ring for positioning in association with a corresponding positioning mechanism on the edge ring carrier during handling of the edge ring.
18. The edge ring of claim 17, wherein the positioning mechanism comprises: and the positioning pin or the positioning groove is arranged on the inner wall of the accommodating part, or the magnet is arranged in the edge ring.
19. A wafer processing method applied to the plasma processing apparatus according to any one of claims 1 to 9, comprising the steps of:
conveying the wafer into a reaction cavity of the processing device through the end effector, and carrying out plasma processing on the wafer in the reaction cavity; determining whether to replace the edge ring by monitoring the influence of the edge ring in the reaction cavity on the wafer processing result or monitoring the change degree of the geometric dimension of the edge ring after being corroded;
the end effector enters the reaction cavity, and the edge ring bearing part bears the edge ring and/or the wafer bearing part bears the wafer;
and the end effector withdraws from the reaction cavity, and the edge ring and the wafer are simultaneously moved out of the reaction cavity, or the edge ring or the wafer are independently moved out of the reaction cavity.
20. An edge ring replacement method applied to the plasma processing apparatus according to any one of claims 1 to 9,
a process for removing an edge ring from a reaction chamber of a processing apparatus, comprising:
the external mechanical arm drives the end effector to enable the edge ring bearing surface to be located at a second height, the end effector penetrates through an opening in the wall of the reaction chamber along the horizontal direction to enter the reaction chamber, and the edge ring bearing part penetrates through the accommodating part of the edge ring; raising the end effector, raising the edge ring carrying surface to a first height, causing the edge ring carrying surface to carry the edge ring to lift the edge ring; the end effector carries the edge ring to pass through the opening on the reaction cavity wall along the horizontal direction and exit the reaction cavity;
a process for placing an edge ring into a reaction chamber of a slave processing apparatus, comprising:
the end effector carries the edge ring while the edge ring carrying surface is at a first height, and the end effector passes through an opening in the reaction chamber wall in a horizontal direction into the reaction chamber; lowering the end effector with the edge ring bearing surface lowered to a second height to place the edge ring in a position around the periphery of the base; the end effector retreats along the horizontal direction, the edge ring bearing part retreats from the edge ring accommodating part, and the end effector retreats from the reaction cavity.
21. The edge ring replacement method of claim 19, further comprising the process of simultaneously removing the edge ring and wafer from the reaction chamber of the processing apparatus:
the edge ring bearing surface is positioned at a second height, the end effector penetrates through an opening in the wall of the reaction cavity along the horizontal direction and enters the reaction cavity, the edge ring bearing part penetrates through the accommodating part of the edge ring, the wafer bearing part is positioned below the wafer jacked by the ejector pin, and the ejector pin is lowered and the wafer falls on the wafer bearing surface; the end effector is raised, the edge ring bearing surface is raised to a first height, the edge ring bearing surface bears the edge ring and lifts the edge ring, and the end effector carries the edge ring and the wafer to horizontally exit the reaction chamber.
22. The edge ring replacement method of claim 19, further comprising the process of simultaneously placing an edge ring and a wafer into a reaction chamber of the processing apparatus:
the end effector carries an edge ring and a wafer, the edge ring carrying surface is located at a first height, and the end effector penetrates through an opening in the wall of the reaction chamber in the horizontal direction and enters the reaction chamber; lowering the end effector with the edge ring bearing surface lowered to a second height to place the edge ring in a position around the periphery of the base; the thimble rises to jack the wafer from the wafer bearing surface; the end effector retreats along the horizontal direction, the edge ring bearing part retreats from the edge ring accommodating part, and the end effector retreats from the reaction cavity; and descending the ejector pin to place the wafer on the base.
23. A method for taking and placing a wafer, which is suitable for the plasma processing device as claimed in any one of claims 1 to 9,
a process for removing a wafer from a reaction chamber of the processing apparatus, comprising:
the edge ring bearing surface is positioned at a second height, the end effector penetrates through the opening in the wall of the reaction cavity along the horizontal direction and enters the reaction cavity, the edge ring bearing part of the end effector penetrates through the accommodating part of the edge ring, the wafer bearing surface is positioned below the wafer jacked by the ejector pin, and the ejector pin is lowered and the wafer falls on the wafer bearing surface; the end effector retreats along the horizontal direction, the edge ring bearing part retreats from the edge ring accommodating part, and the end effector carries the wafer to retreat from the reaction cavity;
a process for placing a wafer into a reaction chamber of the processing apparatus, comprising:
the end effector carries a wafer, meanwhile, the edge ring carrying surface is located at a second height, the end effector penetrates through an opening in the wall of the reaction cavity along the horizontal direction and enters the reaction cavity, the edge ring carrying surface penetrates through a containing part of the edge ring, and the ejector pin is lifted to jack up the wafer from the wafer carrying surface; the end effector retreats along the horizontal direction, the edge ring bearing part retreats from the edge ring accommodating part, and the end effector retreats from the reaction cavity; and descending the ejector pin to place the wafer on the base.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011380087.1A CN114582693A (en) | 2020-11-30 | 2020-11-30 | Plasma processing apparatus, end effector, edge ring and method thereof |
| TW110140251A TWI809544B (en) | 2020-11-30 | 2021-10-29 | Plasma processing device and its end effector, edge ring, wafer processing method, edge ring replacement method, and wafer pick-and-place method |
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| CN202011380087.1A CN114582693A (en) | 2020-11-30 | 2020-11-30 | Plasma processing apparatus, end effector, edge ring and method thereof |
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| CN114582693A true CN114582693A (en) | 2022-06-03 |
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Cited By (1)
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| CN117276162A (en) * | 2023-11-22 | 2023-12-22 | 深圳市恒运昌真空技术有限公司 | Plasma processing equipment |
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| TW202238657A (en) | 2022-10-01 |
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