WO2020012777A1 - Substrate processing device and substrate processing method - Google Patents

Substrate processing device and substrate processing method Download PDF

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Publication number
WO2020012777A1
WO2020012777A1 PCT/JP2019/019368 JP2019019368W WO2020012777A1 WO 2020012777 A1 WO2020012777 A1 WO 2020012777A1 JP 2019019368 W JP2019019368 W JP 2019019368W WO 2020012777 A1 WO2020012777 A1 WO 2020012777A1
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Prior art keywords
coating film
substrate
metal
photosensitive
film
Prior art date
Application number
PCT/JP2019/019368
Other languages
French (fr)
Japanese (ja)
Inventor
将彦 春本
正也 浅井
幸司 金山
田中　裕二
知佐世 中山
洋 有澤
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2020012777A1 publication Critical patent/WO2020012777A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.
  • a coating film is formed by discharging a coating liquid on the upper surface of a substrate.
  • the coating film is present on the peripheral edge of the substrate, when the transport mechanism for transporting the substrate grips the peripheral edge of the substrate, a part of the coating film is peeled off to become particles. Then, the coating film on the peripheral portion of the substrate is dissolved by discharging the organic solvent to the peripheral portion of the substrate. Thereby, the coating film on the peripheral portion of the substrate is removed.
  • Patent Literature 1 discloses a coating method for removing a metal-containing hard mask film, which is different from a metal-containing coating film.
  • a masking film made of a negative photoresist solution is formed on the periphery of the substrate.
  • a hard mask film is formed on the surface of the substrate.
  • the hard mask film at the peripheral portion of the substrate is removed by a hard mask film removing solution made of an organic solvent.
  • the masking film is removed by a masking film removing solution that dissolves the negative photoresist.
  • JP 2014-45171 A JP 2014-45171 A
  • An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of forming a metal-containing coating film having a uniform thickness on a substrate while preventing the occurrence of metal contamination.
  • a photosensitive coating solution is supplied to a substrate having a surface to be processed on which a film to be processed is formed, so that the surface of the substrate is processed so as to cover the film to be processed.
  • a photosensitive coating solution supply unit that forms a photosensitive coating film
  • an edge exposure unit that exposes the outer periphery of the photosensitive coating film that overlaps the periphery of the processing surface of the substrate, and contains a metal on the photosensitive coating film.
  • Metal-containing coating liquid supply section for forming a metal-containing coating film on a photosensitive coating film by supplying the coating liquid to be applied as a metal-containing coating liquid, and the outer periphery of the metal-containing coating film overlapping the peripheral portion of the processing surface of the substrate
  • a first removing liquid supply unit for supplying a first removing liquid to the metal-containing coating film so that the portion is removed, and the photosensitive coating film is exposed after the outer peripheral portion of the metal-containing coating film is removed. Supplying a second removal liquid to the photosensitive coating film so that the outer periphery is removed That and a second removing solution supply unit.
  • the photosensitive coating liquid is supplied to the substrate by the photosensitive coating liquid supply unit, so that the photosensitive coating film is formed on the surface to be processed of the substrate.
  • the outer periphery of the photosensitive coating film is exposed by the edge exposure unit.
  • the metal-containing coating film is formed on the photosensitive coating film by supplying the metal-containing coating solution onto the photosensitive coating film by the metal-containing coating solution supply unit.
  • the first removing liquid to the metal-containing coating film by the first removing liquid supply unit
  • the outer peripheral portion of the metal-containing coating film is removed.
  • the exposed outer peripheral portion of the photosensitive coating film is removed by supplying the second removing liquid to the photosensitive coating film by the second removing liquid supply unit.
  • the photosensitive coating film is formed on the entire surface of the substrate to be processed so as to cover not only the peripheral portion of the substrate but also the film to be processed. Therefore, the metal-containing coating film is formed with a uniform thickness on the photosensitive coating film without rising near the periphery of the substrate. Further, when the outer peripheral portion of the metal-containing coating film is removed, even if the metal component of the metal-containing coating film remains on the outer peripheral portion of the photosensitive coating film, the metal component is removed along with the outer peripheral portion of the photosensitive coating film. Is done. Therefore, even when the transport mechanism holds the peripheral portion of the substrate, the metal component does not adhere to the transport mechanism. As a result, it is possible to form a metal-containing coating film having a uniform thickness on the substrate while preventing the occurrence of metal contamination.
  • the first removing liquid is a liquid that dissolves the metal-containing coating film and does not dissolve the photosensitive coating film
  • the second removing liquid is a liquid that dissolves the photosensitive coating film and does not dissolve the metal-containing coating film. It may be.
  • the outer peripheral portions of the metal-containing coating film and the photosensitive coating film can be sequentially and selectively removed easily.
  • the first removing liquid may include an organic solvent
  • the second removing liquid may include a developer for performing positive tone development.
  • the metal-containing coating film can be dissolved by the first removing liquid without dissolving the photosensitive coating film.
  • the photosensitive coating film can be dissolved by the second removing liquid without dissolving the metal-containing coating film.
  • a substrate processing apparatus is a substrate processing apparatus using an exposure apparatus that exposes a substrate, wherein a first photosensitive substrate is provided on a substrate having a surface to be processed on which a film to be processed is formed.
  • a first photosensitive coating liquid supply unit that forms a first photosensitive coating film on a processing surface of a substrate so as to cover a processing target film by supplying a coating liquid, and a first photosensitive coating liquid.
  • Forming a second photosensitive coating film on the first photosensitive coating film by supplying a second photosensitive coating solution having a different photosensitive wavelength distribution on the first photosensitive coating film;
  • the metal-containing coating film is formed on the second photosensitive coating film by supplying the coating solution to be applied as the metal-containing coating solution.
  • a metal-containing coating liquid supply unit and a first removing liquid supply for supplying a first removing liquid to the metal-containing coating film such that an outer peripheral portion of the metal-containing coating film overlapping a peripheral portion of the processing surface of the substrate is removed.
  • the first photosensitive coating liquid is supplied to the substrate by the first photosensitive coating liquid supply unit, so that the first photosensitive coating film is formed on the processed surface of the substrate.
  • the second photosensitive coating liquid is supplied onto the first photosensitive coating film by the second photosensitive coating liquid supply unit, so that the second photosensitive coating film is formed on the first photosensitive coating film. Is done.
  • the outer peripheral part of the second photosensitive coating film is exposed by the first edge exposure part.
  • the metal-containing coating film is formed on the second photosensitive coating film by supplying the metal-containing coating solution onto the second photosensitive coating film by the metal-containing coating liquid supply unit.
  • the outer peripheral portion of the metal-containing coating film is removed by supplying the first removing liquid to the metal-containing coating film by the first removing liquid supply unit.
  • the second photosensitive coating film is exposed to the second photosensitive coating film by supplying the second removing liquid to the second photosensitive coating film by the second removing liquid supply unit.
  • the outer peripheral portion is removed.
  • the outer periphery of the first photosensitive coating film is exposed by the second edge exposure unit.
  • the first photosensitive coating film is formed on the entire surface of the substrate to be processed so as to cover not only the peripheral portion of the substrate but also the film to be processed, and the second photosensitive coating film is formed of the first photosensitive coating film. It is formed on a photosensitive coating film. Therefore, the metal-containing coating film is formed with a uniform thickness on the second photosensitive coating film without rising near the periphery of the substrate. Further, even when the metal component of the metal-containing coating film remains on the outer peripheral portion of the second photosensitive coating film when the outer peripheral portion of the metal-containing coating film is removed, the metal component is not removed from the second photosensitive coating film. The entire periphery of the film is removed.
  • the metal-containing coating film when the metal-containing coating film is developed, even if the metal component of the metal-containing coating film remains on the outer peripheral portion of the first photosensitive coating film, the metal component remains on the outer periphery of the first photosensitive coating film. All copies are removed. Therefore, even when the transport mechanism holds the peripheral portion of the substrate, the metal component does not adhere to the transport mechanism. As a result, it is possible to form a metal-containing coating film having a uniform thickness on the substrate while preventing the occurrence of metal contamination.
  • the first removing solution is a solution that dissolves the metal-containing coating film and does not dissolve the first and second photosensitive coating films
  • the second removing solution dissolves the second photosensitive coating film.
  • the third removing liquid is a liquid that does not dissolve the first photosensitive coating film and does not dissolve the metal-containing coating film
  • the developing solution is a liquid that does not dissolve the metal-containing coating film. Further, the liquid may not dissolve the first and second photosensitive coating films. In this case, it is possible to selectively and easily develop the metal-containing coating film while sequentially removing the outer peripheral portions of the metal-containing coating film, the second photosensitive coating film, and the first photosensitive coating film.
  • the first removal solution contains an organic solvent
  • the second removal solution contains a developer for performing positive tone development
  • the third removal solution contains a developer for performing positive tone development
  • the developer is negative. It may contain a developer for performing tone development.
  • the metal-containing coating film can be dissolved by the first removing liquid without dissolving the first and second photosensitive coating films.
  • the second photosensitive coating film can be dissolved by the second removing liquid without dissolving the metal-containing coating film.
  • the first photosensitive coating film can be dissolved by the third removing liquid without dissolving the metal-containing coating film.
  • the metal-containing coating film can be dissolved by the developer without dissolving the first and second photosensitive coating films.
  • the first photosensitive coating film includes any one of an i-line resist film, a krypton fluoride resist film and an argon fluoride resist film
  • the second photosensitive coating film is an i-line resist film.
  • Other resist films of the film, the krypton fluoride resist film, and the argon fluoride resist film may be included.
  • the first photosensitive coating film and the second photosensitive coating film having different photosensitive wavelength distributions can be easily formed.
  • a photosensitive coating solution is supplied to a substrate having a surface to be processed on which a film to be processed is formed by supplying the photosensitive coating solution with a photosensitive coating solution.
  • the metal-containing coating film is formed with a uniform thickness on the photosensitive coating film without being raised near the periphery of the substrate. Further, when the outer peripheral portion of the metal-containing coating film is removed, even if the metal component of the metal-containing coating film remains on the outer peripheral portion of the photosensitive coating film, the metal component is removed along with the outer peripheral portion of the photosensitive coating film. Is done. Therefore, even when the transport mechanism holds the peripheral portion of the substrate, the metal component does not adhere to the transport mechanism. As a result, it is possible to form a metal-containing coating film having a uniform thickness on the substrate while preventing the occurrence of metal contamination.
  • the step of supplying the first removing liquid includes supplying a liquid that dissolves the metal-containing coating film and does not dissolve the photosensitive coating film, and the step of supplying the second removing liquid includes photosensitive coating. This may include providing a liquid that dissolves the film and does not dissolve the metal-containing coating film. In this case, the outer peripheral portions of the metal-containing coating film and the photosensitive coating film can be sequentially and selectively removed easily.
  • the step of supplying the first removing liquid may include supplying an organic solvent, and the step of supplying the second removing liquid may include supplying a developer to perform positive tone development. Good.
  • the metal-containing coating film can be dissolved by the first removing liquid without dissolving the photosensitive coating film.
  • the photosensitive coating film can be dissolved by the second removing liquid without dissolving the metal-containing coating film.
  • a substrate processing method is a substrate processing method using an exposure apparatus that exposes a substrate, wherein a first photosensitive substrate is provided with a target surface on which a target film is formed. Forming a first photosensitive coating film on the surface to be processed of the substrate so as to cover the film to be processed by supplying the first photosensitive coating solution by the photosensitive coating solution supply unit; A second photosensitive coating liquid having a different photosensitive wavelength distribution from that of the first photosensitive coating liquid is supplied onto the first photosensitive coating film by the liquid supply unit, so that a second photosensitive coating liquid is formed on the first photosensitive coating film.
  • Forming a photosensitive coating film on the substrate exposing an outer peripheral portion of the second photosensitive coating film on the peripheral portion of the processing surface of the substrate by a first edge exposure section,
  • the metal-containing coating liquid is supplied to the coating film by the metal-containing coating liquid supply unit.
  • Forming a metal-containing coating film on the second photosensitive coating film by supplying it as a coating solution; and removing the metal so as to remove the outer peripheral portion of the metal-containing coating film overlapping the peripheral portion of the processing surface of the substrate.
  • the metal-containing coating film is formed with a uniform thickness on the second photosensitive coating film without being raised near the periphery of the substrate. Further, even when the metal component of the metal-containing coating film remains on the outer peripheral portion of the second photosensitive coating film when the outer peripheral portion of the metal-containing coating film is removed, the metal component is not removed from the second photosensitive coating film. The entire periphery of the film is removed. Further, when the metal-containing coating film is developed, even if the metal component of the metal-containing coating film remains on the outer peripheral portion of the first photosensitive coating film, the metal component remains on the outer periphery of the first photosensitive coating film. All copies are removed. Therefore, even when the transport mechanism holds the peripheral portion of the substrate, the metal component does not adhere to the transport mechanism. As a result, it is possible to form a metal-containing coating film having a uniform thickness on the substrate while preventing the occurrence of metal contamination.
  • the step of supplying the first removing liquid includes supplying a liquid that dissolves the metal-containing coating film and does not dissolve the first and second photosensitive coating films, and supplies the second removing liquid.
  • the step includes supplying a liquid that dissolves the second photosensitive coating film and does not dissolve the metal-containing coating film, and the step of supplying a developing solution includes dissolving the metal-containing coating film and using the first and second photosensitive films.
  • Supplying a liquid that does not dissolve the conductive coating film, and supplying the third removal liquid may include supplying a liquid that dissolves the first photosensitive coating film and does not dissolve the metal-containing coating film. Good. In this case, it is possible to selectively and easily develop the metal-containing coating film while sequentially removing the outer peripheral portions of the metal-containing coating film, the second photosensitive coating film, and the first photosensitive coating film.
  • the step of supplying the first removal liquid includes supplying an organic solvent, and the step of supplying the second removal liquid includes performing positive tone development by supplying a developer.
  • the step of supplying a developer includes performing a negative tone development by supplying a developer, and the step of supplying a third removal liquid includes performing a positive tone development by supplying a developer. May be.
  • the metal-containing coating film can be dissolved by the first removing liquid without dissolving the first and second photosensitive coating films.
  • the second photosensitive coating film can be dissolved by the second removing liquid without dissolving the metal-containing coating film.
  • the metal-containing coating film can be dissolved by the developer without dissolving the first and second photosensitive coating films.
  • the first photosensitive coating film can be dissolved by the third removing liquid without dissolving the metal-containing coating film.
  • the step of forming the first photosensitive coating film includes forming any one of an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film, and forming the second photosensitive film.
  • the step of forming the conductive coating film may include forming another resist film among an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film. In this case, the first photosensitive coating film and the second photosensitive coating film having different photosensitive wavelength distributions can be easily formed.
  • the present invention it is possible to form a metal-containing coating film having a uniform film thickness on a substrate while preventing the occurrence of metal contamination.
  • FIG. 1 is a schematic plan view of the substrate processing apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a schematic side view of a substrate processing apparatus mainly showing the coating processing section of FIG.
  • FIG. 3 is a schematic side view of the substrate processing apparatus mainly showing the heat treatment section of FIG.
  • FIG. 4 is a side view mainly showing the transport unit of FIG.
  • FIG. 5 is a partially enlarged longitudinal sectional view of a substrate on which processing is performed.
  • FIG. 6 is a partially enlarged longitudinal sectional view of a substrate on which processing is performed.
  • FIG. 7 is a partially enlarged longitudinal sectional view of a substrate on which processing is performed.
  • FIG. 8 is a schematic plan view of the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 8 is a schematic plan view of the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 9 is a schematic side view of the substrate processing apparatus mainly showing the coating processing section, the developing processing section, and the cleaning / drying processing section in FIG.
  • FIG. 10 is a schematic side view of the substrate processing apparatus mainly showing the heat treatment section and the cleaning / drying processing section in FIG.
  • FIG. 11 is a side view mainly showing the transport unit of FIG.
  • FIG. 12 is a partially enlarged longitudinal sectional view of a substrate on which processing according to the second embodiment is performed.
  • FIG. 13 is a partially enlarged longitudinal sectional view of a substrate on which processing according to the second embodiment is performed.
  • FIG. 14 is a partially enlarged longitudinal sectional view of a substrate on which processing according to the second embodiment is performed.
  • substrate refers to a semiconductor substrate, a flat panel display (FPD) substrate such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk.
  • FPD flat panel display
  • organic EL Electro Luminescence
  • FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 includes an indexer block 11 and a coating block 12.
  • the indexer block 11 includes a plurality of carrier placement units 111 and a transport unit 112.
  • a carrier 113 that stores a plurality of substrates W in multiple stages is placed on each carrier placement section 111.
  • the transport unit 112 includes a control unit 114 and a transport device 115.
  • the control unit 114 controls various components of the substrate processing apparatus 100.
  • the transfer device 115 transfers the substrate W while holding the substrate W.
  • the coating block 12 includes a coating processing unit 121, a transporting unit 122, and a heat treatment unit 123.
  • the coating processing section 121 and the heat treatment section 123 are provided to face each other with the transport section 122 interposed therebetween.
  • FIG. 2 is a schematic side view of the substrate processing apparatus 100 mainly showing the coating processing unit 121 of FIG.
  • the coating processing unit 121 is provided with a plurality of coating processing units (spin coaters) 20.
  • Each coating processing unit 20 includes a plurality of spin chucks 21, a plurality of cups 22, a plurality of coating nozzles 23, a moving mechanism 24, a plurality of edge rinse nozzles 25, and a plurality of Vebber nozzles 26 (see FIG. 6B described later).
  • the plurality of cups 22 respectively correspond to the plurality of spin chucks 21 and are provided so as to cover the periphery of the corresponding spin chuck 21.
  • the spin chuck 21 rotates while sucking and holding the substrate W in a horizontal posture.
  • one of the application nozzles 23 is moved above the substrate W by the moving mechanism 24, and the application liquid is discharged from the application nozzle 23.
  • the coating liquid is applied on the processing surface of the substrate W, and a film of the coating liquid (hereinafter, referred to as a coating film) is formed on the processing surface of the substrate W.
  • the surface to be processed refers to a surface of the substrate W on which various patterns such as a circuit pattern are formed.
  • Each of the plurality of application nozzles 23 can discharge a type of application liquid unique to the application nozzle 23.
  • a plurality of application nozzles 23 are called application nozzles 23a, 23b, 23c ... respectively.
  • a rinse liquid is discharged from any of the edge rinse nozzles 25 to the peripheral portion of the substrate W.
  • the peripheral portion of the substrate W refers to a region of a constant width along the outer peripheral portion of the substrate W on the processing surface of the substrate W. Thereby, the coating liquid adhering to the peripheral portion of the substrate W is removed.
  • Each of the plurality of edge rinse nozzles 25 can discharge a type of removal liquid unique to the edge rinse nozzle 25. In the following description, when distinguishing the plurality of edge rinse nozzles 25, the plurality of edge rinse nozzles 25 will be referred to as edge rinse nozzles 25a, 25b, 25c, respectively.
  • the rinsing liquid is discharged from the Beberls nozzle 26 to the bevel portion of the substrate W.
  • the bevel portion refers to a portion inclined from the outer peripheral portion of the processing surface of the substrate W toward the outermost peripheral portion of the substrate W and a portion inclined from the outer peripheral portion of the back surface of the substrate W toward the outermost peripheral portion of the substrate W.
  • the back surface refers to a surface of the substrate W opposite to the surface to be processed. Thereby, the coating liquid adhering to the bevel portion of the substrate W is removed.
  • FIG. 3 is a schematic side view of the substrate processing apparatus 100 mainly showing the heat treatment section 123 of FIG.
  • the heat treatment section 123 includes an upper heat treatment section 101 and a lower heat treatment section 102.
  • Each of the upper heat treatment unit 101 and the lower heat treatment unit 102 includes a plurality of heating units PHP, a plurality of cooling units CP, and an edge exposure unit 40.
  • the heating unit PHP the substrate W is subjected to a heat treatment.
  • the cooling unit CP the substrate W is cooled.
  • the edge exposure unit 40 includes a spin chuck 41 and a light source 42.
  • the light source 42 includes, for example, a high-pressure mercury lamp, and emits light (i-line) having a peak wavelength of 365 nm as exposure light.
  • the spin chuck 41 rotates while sucking and holding the substrate W in a horizontal posture.
  • the light source 42 irradiates an i-line to a region having a constant width on the peripheral portion of the substrate W.
  • an exposure process edge exposure process
  • FIG. 4 is a side view mainly showing the transport unit 122 of FIG.
  • the transfer section 122 has an upper transfer chamber 125 and a lower transfer chamber 126.
  • a transfer device (transfer robot) 127 is provided in the upper transfer chamber 125
  • a transfer device 128 is provided in the lower transfer chamber 126.
  • Each of the transfer devices 127 and 128 transfers the substrate W while holding the substrate W.
  • Substrate placement sections P1 and P2 are provided between the transfer section 112 and the upper transfer chamber 125, and substrate placement sections P3 and P4 are provided between the transfer section 112 and the lower transfer chamber 126.
  • FIGS. 5 to 7 are partially enlarged longitudinal sectional views of the substrate W to be processed.
  • FIG. 5A shows an unprocessed substrate W made of, for example, silicon.
  • the substrate W in FIG. 5A is transported from the indexer block 11 in FIG. 1 to the heat treatment section 123 of the coating block 12, and the cooling unit CP performs a cooling process on the substrate W.
  • the substrate W is transported to any one of the coating units 20 of the coating unit 121 in FIG. 1 and is held and rotated by the spin chuck 21.
  • the coating liquid is discharged from the coating nozzle 23a to a substantially central portion of the processing surface of the substrate W.
  • the lower layer film F1 is formed as a coating film on the surface to be processed of the substrate W.
  • the rinse liquid is discharged to the peripheral portion of the substrate W by the edge rinse nozzle 25a. Thereby, the edge rinse process is performed, and the coating liquid adhering to the peripheral portion of the substrate W is removed.
  • the rinsing liquid in FIG. 5C may be, for example, an organic solvent, pure water or an aqueous solution.
  • the substrate W is transported to the heat treatment unit 123, and a predetermined heat treatment (including a cooling process) is performed on the substrate W by the heating unit PHP or the cooling unit CP in FIG.
  • the lower film F1 has a configuration in which inorganic coating films and organic coating films are alternately stacked. In this case, a heat treatment is performed on the substrate W in the heat treatment unit 123 each time one coating film is formed on the substrate W in the coating processing unit 121 and the edge rinsing process is performed.
  • the lower film F1 has a configuration in which coating films Fa, Fb, and Fc are stacked on the substrate W in this order.
  • the coating film Fa is, for example, a silicon nitride film, a silicon oxide film, or a polysilicon film, and is a film to be etched by an external etching device (not shown) after the substrate processing in this embodiment is completed.
  • the coating film Fb is, for example, an SOC (Spin On Carbon) film.
  • the coating film Fc is, for example, an SOG (Spin On Glass) film or a SiARC (Si-rich Anti Reflective Coating) film.
  • the coating films Fb and Fc are used as masks for etching the coating film Fa.
  • the lower layer film F1 includes the coating films Fa to Fc, but the present invention is not limited to this.
  • the coating film Fc is used to amplify the etching rate of the coating film Fa. Therefore, when it is possible to etch the coating film Fa at a sufficiently high etching rate, the lower layer film F1 may include the coating films Fa and Fb and not include the coating film Fc. Alternatively, the lower layer film F1 may include the coating film Fa and not include the coating films Fb and Fc.
  • the substrate W is transported to any one of the coating units 20 of the coating unit 121, and is held and rotated by the spin chuck 21.
  • a photosensitive photoresist liquid is discharged as a coating liquid to a substantially central portion of the processing surface of the substrate W by the coating nozzle 23b.
  • a photosensitive resist film F2 is formed as a coating film on the surface to be processed of the substrate W so as to cover the lower layer film F1.
  • the photosensitive resist film F2 is, for example, an i-line resist film that is exposed to i-line.
  • the rinsing liquid in FIG. 6B may be the same rinsing liquid as in FIG. 5C.
  • the substrate W is transported to the heat treatment unit 123, and the heating unit PHP or the cooling unit CP performs a predetermined heat treatment on the substrate W.
  • the substrate W is held and rotated by the spin chuck 41 in the edge exposure unit 40 in FIG. In this state, as shown in FIG. 6C, the exposure light is emitted from the light source 42 to a region of a constant width on the peripheral portion of the substrate W.
  • an edge exposure process is performed on a region having a constant width of the photosensitive resist film F2 at a peripheral portion on the substrate W.
  • the cooling processing is performed on the substrate W by the cooling unit CP.
  • the photosensitive resist film F2 is an i-line resist film, but the present invention is not limited to this.
  • the photosensitive resist film F2 may be another photosensitive resist film.
  • the photosensitive resist film F2 may be a KrF (krypton fluoride) resist film that is exposed to light having a peak wavelength of 248 nm.
  • the light source 42 includes a KrF excimer laser.
  • the photosensitive resist film F2 may be an ArF (argon fluoride) resist film that is exposed to light having a peak wavelength of 193 nm.
  • the light source 42 includes an ArF excimer laser.
  • the substrate W is transported to any one of the coating processing units 20 of the coating processing unit 121, and is held and rotated by the spin chuck 21.
  • a metal-containing resist containing a metal component such as a metal component or a metal oxide for efficiently absorbing EUV (Extreme Ultra Violet) as a composition.
  • the liquid is discharged as a coating liquid from the coating nozzle 23c to a substantially central portion of the processing surface of the substrate W.
  • the wavelength of EUV is 13 nm or more and 14 nm or less.
  • the metal component includes, for example, Sn (tin), HfO 2 (hafnium oxide) or ZrO 2 (zirconium dioxide).
  • the metal-containing resist film F4 is formed as a coating film on the surface to be processed of the substrate W so as to cover the photosensitive resist film F2.
  • the edge rinse nozzle 25b discharges the rinse liquid to the periphery of the substrate W.
  • a liquid that dissolves the metal-containing resist film F4 but does not dissolve the photosensitive resist film F2 is used as the rinsing liquid in FIG. 7B.
  • an organic solvent having low solubility such as MIBC (methyl isobutyl carbinol) or MIBK (methyl isobutyl ketone) is used as the rinsing liquid.
  • MIBC methyl isobutyl carbinol
  • MIBK methyl isobutyl ketone
  • the rinse liquid is discharged to the peripheral edge of the substrate W by the edge rinse nozzle 25c.
  • a liquid that dissolves the photosensitive resist film F2 but does not dissolve the metal-containing resist film F4 is used as the rinsing liquid in FIG. 7C.
  • a developer such as an alkaline aqueous solution containing TMAH (tetramethylammonium hydroxide: tetramethylammonium hydroxide) or KOH (potassium hydroxide: potassium hydroxide) is used as the rinsing liquid.
  • TMAH tetramethylammonium hydroxide: tetramethylammonium hydroxide
  • KOH potassium hydroxide
  • the substrate W is transported to the heat treatment unit 123, and the heating unit PHP or the cooling unit CP performs a predetermined heat treatment on the substrate W. Thereafter, the substrate W is transported from the coating block 12 to the indexer block 11, and the substrate processing ends.
  • the carrier 113 containing the unprocessed substrate W is placed on the carrier placement section 111 (FIG. 1) of the indexer block 11.
  • the transfer device 115 transfers the unprocessed substrate W from the carrier 113 to the substrate platforms P1 and P3 (FIG. 4).
  • the transport device 115 transports the processed substrate W placed on the substrate platforms P2 and P4 (FIG. 4) to the carrier 113.
  • the transfer device 127 transfers the substrate W mounted on the substrate mounting part P1 to one of the cooling unit CP of the upper heat treatment unit 101 (FIG. 3) and the upper part of the coating processing unit 121 (FIG. 2). It is transported to the coating processing unit 20 in order.
  • the cooling unit CP the substrate W is cooled to a temperature suitable for forming the lower film F1.
  • the lower layer film F1 is formed on the substrate W as shown in FIG. 5B, and the edge rinse processing is performed on the substrate W as shown in FIG. 5C.
  • the transport device 127 transports the substrate W on which the lower layer film F1 is formed by the coating processing unit 20 to the heating unit PHP and the cooling unit CP of the upper heat treatment unit 101 in order.
  • the substrate W is heated to 150 ° C. to 400 ° C. in the heating unit PHP, it is cooled in the cooling unit CP.
  • the transfer device 127 moves the coating unit 20 and the heating unit PHP and the cooling unit CP. The transfer of the substrate W is repeated.
  • the transport device 127 transports the substrate W to any one of the upper coating processing units 20 of the coating processing unit 121, the heating unit PHP of the upper thermal processing unit 101, the cooling unit CP, the edge exposure unit 40, and the cooling unit CP. .
  • the coating processing unit 20 a photosensitive resist film F2 is formed on the substrate W as shown in FIG. 6A, and the substrate W is subjected to Vebberrus processing as shown in FIG. 6B.
  • the heating unit PHP after the substrate W is heated to 90 ° C. to 130 ° C., it is cooled in the cooling unit CP.
  • the edge exposure section 40 the edge exposure processing is performed on the substrate W as shown in FIG. 6C, and the substrate W is cooled in the cooling unit CP.
  • the transport device 127 transports the substrate W to one of the upper coating processing units 20 of the coating processing unit 121, the heating unit PHP and the cooling unit CP of the upper thermal processing unit 101 in this order.
  • the substrate W is formed as shown in FIGS. 7B and 7C.
  • a two-stage edge rinse process is performed.
  • the heating unit PHP the substrate W is heated to 90 ° C. to 200 ° C., and then cooled in the cooling unit CP.
  • the transport device 127 transports the cooled substrate W to the substrate platform P2.
  • the transfer device 128 transfers the substrate W mounted on the substrate mounting portion P3 to the cooling unit CP of the lower heat treatment unit 102 (FIG. 3) and any one of the lower coating processing units 20 of the coating processing unit 121 (FIG. 2). Convey in order. Next, the transfer device 128 transfers the substrate W to the heating unit PHP and the cooling unit CP of the lower heat treatment unit 102 in order. When the lower film F1 includes a plurality of coating films, the transfer device 128 repeats the transfer of the substrate W between the coating processing unit 20 and the heating unit PHP and the cooling unit CP.
  • the transport device 128 transports the substrate W to any one of the lower coating processing units 20 of the coating processing unit 121, the edge exposure unit 40 of the lower thermal processing unit 102, the heating unit PHP, and the cooling unit CP. Thereafter, the transport device 128 transports the substrate W to any one of the lower coating processing units 20 of the coating processing unit 121, the heating unit PHP of the lower thermal processing unit 102, the cooling unit CP, and the substrate mounting unit P2.
  • the processing content of the substrate W in the lower coating processing unit 20 and the lower thermal processing unit 102 is the same as the processing content of the substrate W in the upper coating processing unit 20 and the upper thermal processing unit 101, respectively.
  • the photosensitive resist film F2 is formed on the entire processing surface of the substrate W so as to cover not only the peripheral portion of the substrate W but also the lower layer film F1. You. Therefore, the metal-containing resist film F4 is formed with a uniform thickness on the photosensitive resist film F2 without being raised near the periphery of the substrate W. Further, even when the metal component of the metal-containing resist film F4 remains on the outer peripheral portion of the photosensitive resist film F2 when the outer peripheral portion of the metal-containing resist film F4 is removed, the metal component of the photosensitive resist film F2 does The entire outer peripheral portion is removed.
  • the metal component does not adhere to the transfer devices 115, 127, and 128.
  • This makes it possible to form the metal-containing resist film F4 having a uniform thickness on the substrate W while preventing the occurrence of metal contamination.
  • the region of the metal-containing resist film F4 near the periphery of the substrate W can be effectively used, and a decrease in yield can be prevented.
  • FIG. 8 is a schematic plan view of the substrate processing apparatus according to the second embodiment of the present invention.
  • the substrate processing apparatus 100 further includes a developing block 13, a cleaning / drying processing block 14A, and a loading / unloading block 14B in addition to the indexer block 11 and the coating block 12.
  • the interface block 14 is constituted by the cleaning / drying processing block 14A and the loading / unloading block 14B.
  • An exposure device 15 that performs an exposure process on the substrate W by EUV is disposed adjacent to the loading / unloading block 14B.
  • the development block 13 includes a development processing section 131, a transport section 132, and a heat treatment section 133.
  • the development processing unit 131 and the heat treatment unit 133 are provided to face each other with the transport unit 132 interposed therebetween.
  • the cleaning / drying processing block 14A includes cleaning / drying processing units 161 and 162 and a transport unit 163.
  • the cleaning / drying processing units 161 and 162 are provided to face each other with the transport unit 163 interposed therebetween.
  • the transport unit 163 is provided with transport devices 141 and 142.
  • a transfer device 143 is provided in the carry-in / carry-out block 14B. The transfer device 143 loads and unloads the substrate W from the exposure device 15.
  • FIG. 9 is a schematic side view of the substrate processing apparatus 100 mainly showing the coating processing section 121, the development processing section 131, and the cleaning / drying processing section 161 of FIG.
  • a plurality of development processing units (spin developers) 30 are provided in the development processing unit 131.
  • Each development processing unit 30 includes a plurality of spin chucks 31 and a plurality of cups 32, similarly to the coating processing unit 20.
  • Each developing unit 30 includes a plurality of developing nozzles 33 for discharging the developing solution, a moving mechanism 34 for moving each developing nozzle 33 in one direction, and an edge rinse nozzle 35.
  • the spin chuck 31 rotates while sucking and holding the substrate W in a horizontal posture. In this state, the developing solution is supplied to each substrate W while each developing nozzle 33 is moved in one direction by the moving mechanism 34. Thus, the development processing of the substrate W is performed. Further, a rinse liquid is discharged from the edge rinse nozzle 35 to a peripheral portion of the substrate W after the development processing.
  • the cleaning / drying processing unit 161 is provided with a plurality of cleaning / drying processing units SD1.
  • the cleaning and drying processing of the substrate W before the exposure processing is performed.
  • FIG. 10 is a schematic side view of the substrate processing apparatus 100 mainly showing the heat treatment units 123 and 133 and the cleaning / drying processing unit 162 of FIG.
  • two edge exposure units 40 are provided in each of upper heat treatment unit 101 and lower heat treatment unit 102 of heat treatment unit 123.
  • one edge exposure unit 40 is called an edge exposure unit 40a
  • the other edge exposure unit 40 is called an edge exposure unit 40b.
  • the edge exposure unit 40a and the edge exposure unit 40b have the same configuration except that the light source 42 is different.
  • the light source 42 of the edge exposure unit 40a includes a high-pressure mercury lamp, for example, and emits light (i-line) having a peak wavelength of 365 nm as exposure light.
  • the light source 42 of the edge exposure unit 40b includes, for example, a KrF excimer laser and emits light having a peak wavelength of 248 nm as exposure light.
  • the heat treatment section 133 has an upper heat treatment section 103 and a lower heat treatment section 104.
  • the upper heat treatment unit 103 and the lower heat treatment unit 104 are provided with a plurality of heating units PHP and cooling units CP.
  • the heating unit PHP provided adjacent to the cleaning / drying processing block 14A is configured to be able to carry in the substrate W from the cleaning / drying processing block 14A.
  • the cleaning / drying processing unit 162 is provided with a plurality of cleaning / drying processing units SD2. In the cleaning / drying processing unit SD2, the cleaning and drying processing of the substrate W before the exposure processing is performed.
  • FIG. 11 is a side view mainly showing the transport units 122, 132, and 163 of FIG.
  • the transport section 132 has an upper transport chamber 135 and a lower transport chamber 136.
  • a transfer device 137 is provided in the upper transfer chamber 135, and a transfer device 138 is provided in the lower transfer chamber 136.
  • Each of the transfer devices 137 and 138 transfers the substrate W while holding the substrate W.
  • Substrate placement sections P5 and P6 are provided between the upper transfer chamber 125 and the upper transfer chamber 135, and substrate placement sections P7 and P8 are provided between the lower transfer chamber 126 and the lower transfer chamber 136.
  • a placement and buffer unit PB1 is provided between the upper transfer chamber 135 and the transfer unit 163, and a placement and buffer unit PB2 is provided between the lower transfer chamber 136 and the transfer unit 163.
  • a substrate mounting section P9 and a plurality of mounting and cooling sections PCP are provided adjacent to the loading / unloading block 14B.
  • FIGS. 12 to 14 are partially enlarged longitudinal sectional views of a substrate W on which processing according to the second embodiment is performed.
  • the same processing as the processing in FIGS. 5A to 6B in the first embodiment is performed on the substrate W.
  • a photosensitive first photoresist liquid is used as a coating liquid in the processing of FIG.
  • a photosensitive resist film F2 is formed on the surface to be processed of the substrate W.
  • the photosensitive resist film F2 is a KrF resist film that is exposed to light having a peak wavelength of, for example, 248 nm.
  • the substrate W is transported to any one of the coating processing units 20 of the coating processing unit 121, and is held and rotated by the spin chuck 21.
  • a photosensitive second photoresist liquid is discharged as a coating liquid to a substantially central portion of the processing surface of the substrate W by the coating nozzle 23d.
  • the photosensitive resist film F3 is formed as a coating film on the processing surface of the substrate W so as to cover the photosensitive resist film F2.
  • the photosensitive resist film F3 is an i-ray resist film that is exposed to light having a peak wavelength of, for example, 365 nm.
  • the photosensitive resist film F2 is a KrF resist film and the photosensitive resist film F3 is an i-line resist film, but the present invention is not limited to this.
  • the photosensitive resist films F2 and F3 may be other resist films as long as they have different photosensitive wavelength distributions. Therefore, the photosensitive resist film F2 is, for example, any one of an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film, and the photosensitive resist film F3 is another resist film. Is also good.
  • the rinsing liquid is discharged to the bevel portion of the substrate W by the Beberls nozzle 26. As a result, the Beberls process is performed, and the second photoresist liquid adhering to the bevel portion of the substrate W is removed.
  • the rinsing liquid in FIG. 12B may be the same rinsing liquid as in FIG. 6B.
  • a predetermined heat treatment is performed on the substrate W by the heating unit PHP or the cooling unit CP.
  • the substrate W is transported to the heat treatment unit 123 in FIG. 8, and a predetermined heat treatment is performed on the substrate W by the heating unit PHP or the cooling unit CP.
  • the substrate W is held and rotated by the spin chuck 41 in the edge exposure section 40a in FIG. In this state, as shown in FIG. 12C, exposure light is emitted from the light source 42 to a region of a constant width on the peripheral portion of the substrate W.
  • an edge exposure process is performed on a region of a fixed width of the photosensitive resist film F3 at a peripheral portion on the substrate W.
  • the cooling processing is performed on the substrate W by the cooling unit CP.
  • the substrate W is transported to any one of the coating units 20 of the coating unit 121, and is held and rotated by the spin chuck 21.
  • a metal-containing resist liquid is discharged as a coating liquid by a coating nozzle 23c to a substantially central portion of a processing surface of the substrate W.
  • the metal-containing resist film F4 is formed as a coating film on the surface to be processed of the substrate W so as to cover the photosensitive resist film F3.
  • the rinse liquid is discharged to the peripheral edge of the substrate W by the edge rinse nozzle 25b.
  • a liquid that dissolves the metal-containing resist film F4 and does not dissolve the photosensitive resist films F2 and F3 is used.
  • an organic solvent having low solubility such as MIBC or MIBK is used as the rinsing liquid.
  • the rinsing liquid is discharged to the peripheral portion of the substrate W by the edge rinsing nozzle 25c.
  • a liquid that dissolves the photosensitive resist film F3 but does not dissolve the metal-containing resist film F4 is used as the rinsing solution.
  • a developing solution such as an alkaline aqueous solution containing TMAH or KOH is used as the rinsing solution.
  • the substrate W is transported to the heat treatment unit 123, and the heating unit PHP or the cooling unit CP performs a predetermined heat treatment on the substrate W. Thereafter, the substrate W is transported to the edge exposure unit 40b in FIG. 10 and is held and rotated by the spin chuck 41. In this state, as shown in FIG. 14A, the light source 42 irradiates exposure light to a region having a constant width on the periphery of the substrate W. Thus, an edge exposure process is performed on a region having a constant width of the photosensitive resist film F2 at a peripheral portion on the substrate W. After the edge exposure processing, the cooling processing is performed on the substrate W by the cooling unit CP.
  • the substrate W is transported to the exposure device 15 in FIG. 8, and the substrate W is exposed. Thereby, the metal-containing resist film F4 is exposed in a predetermined pattern.
  • the substrate W is transported to the heat treatment unit 133, and the heating unit PHP or the cooling unit CP performs predetermined heat treatment including post-exposure bake (PEB) on the substrate W.
  • PEB post-exposure bake
  • the substrate W is transported to the developing unit 131 shown in FIG. 9 and is held and rotated by the spin chuck 31.
  • the developing solution is discharged from the developing nozzle 33 onto the surface to be processed of the substrate W, as shown in FIG.
  • a solution that dissolves the metal-containing resist film F4 but does not dissolve the photosensitive resist films F2 and F3 is used as the developing solution.
  • a developer such as an organic solvent containing nBA (n-butyl acetate) or 2-heptanone is used as the developer. Thereby, a negative tone development process is performed, and the metal-containing resist film F4 is formed in a predetermined pattern.
  • a rinse liquid is discharged from the edge rinse nozzle 35 onto the peripheral portion of the substrate W rotated by the spin chuck 31 as shown in FIG.
  • a liquid that dissolves the photosensitive resist film F2 and does not dissolve the metal-containing resist film F4 is used as the rinse liquid in FIG.
  • a developing solution such as an alkaline aqueous solution containing TMAH or KOH is used as the rinsing solution.
  • each unit of the indexer block 11 is the same as the operation of each unit of the indexer block 11 in the first embodiment. Further, after the processing of FIGS. 5A to 6B is performed on the substrate W, the operation of each part of the coating block 12 until a predetermined heat treatment is performed is the same as that of the coating block in the first embodiment. The operation is the same as that of each of the 12 units.
  • the transport device 127 transports the substrate W to any one of the upper coating processing units 20 of the coating processing unit 121, the heating unit PHP of the upper thermal processing unit 101, and the cooling unit CP.
  • the coating processing unit 20 a photosensitive resist film F3 is formed on the substrate W as shown in FIG. 12A, and the substrate W is subjected to Vebberrus processing as shown in FIG. 12B.
  • the heating unit PHP after the substrate W is heated to 90 ° C. to 130 ° C., it is cooled in the cooling unit CP.
  • the transfer device 127 transfers the substrate W to the edge exposure unit 40a of the upper heat treatment unit 101 and the cooling unit CP in order.
  • the edge exposure processing is performed on the substrate W in the edge exposure unit 40a as shown in FIG. 12C, and the substrate W is cooled in the cooling unit CP.
  • the transport device 127 transports the substrate W to one of the upper coating processing units 20 of the coating processing unit 121, the heating unit PHP and the cooling unit CP of the upper thermal processing unit 101 in this order.
  • the substrate W is formed as shown in FIGS. 13B and 13C.
  • a two-stage edge rinse process is performed.
  • the heating unit PHP the substrate W is heated to 90 ° C. to 200 ° C., and then cooled in the cooling unit CP.
  • the transfer device 127 transfers the substrate W to the edge exposure unit 40b of the upper heat treatment unit 101 and the cooling unit CP in order.
  • the edge exposure unit 40b performs an edge exposure process on the substrate W as shown in FIG. 14A, and cools the substrate W in the cooling unit CP.
  • the transport device 127 transports the cooled substrate W to the substrate platform P5 (FIG. 11).
  • the transport device 127 transports the substrate W after the development processing placed on the substrate platform P6 (FIG. 11) to the substrate platform P2 (FIG. 11).
  • the transfer device 128 (FIG. 11) transfers the substrate W to one of the lower coating processing units in the coating processing unit 121. 20, and sequentially transported to the heating unit PHP and the cooling unit CP of the lower heat treatment unit 102 (FIG. 10).
  • the transport device 128 sequentially transports the substrate W to any one of the lower coating processing units 20 of the coating processing unit 121, the heating unit PHP and the cooling unit CP of the lower heat treatment unit 102.
  • the transport device 128 transports the substrate W to the edge exposure unit 40 a of the lower heat treatment unit 102, the cooling unit CP, any one of the lower coating treatment units 20 of the coating treatment unit 121, the heating unit PHP of the lower heat treatment unit 102, and the cooling unit. It is transported to the unit CP in order. Thereafter, the transfer device 128 transfers the substrate W to the edge exposure unit 40b of the lower heat treatment unit 102, the cooling unit CP, and the substrate mounting unit P7 (FIG. 11) in this order. The transport device 128 transports the substrate W after the development processing placed on the substrate platform P8 (FIG. 11) to the substrate platform P4 (FIG. 11).
  • the transport device 137 (FIG. 11) transports the substrate W placed on the substrate platform P5 to the loading / buffer unit PB1 (FIG. 11).
  • the substrate W after the exposure processing by the exposure device 15 and the heat treatment is placed in the heating unit PHP of the upper heat treatment section 103 (FIG. 10) adjacent to the cleaning / drying processing block 14A.
  • the transport device 137 sequentially transports the substrate W placed on the heating unit PHP to the cooling unit CP and one of the upper development processing units 30 (FIG. 9).
  • the cooling unit CP the substrate W is cooled to a temperature suitable for the development processing.
  • the development processing unit 30 is performed on the substrate W as shown in FIG. 14B, and the edge rinsing processing is performed on the substrate W as shown in FIG. 14C.
  • the transport device 137 transports the substrate W after the development and the edge rinsing process to the substrate platform P6.
  • the transport device 138 transports the substrate W mounted on the substrate mounting portion P7 to the mounting and buffering portion PB2 (FIG. 11).
  • the transport device 138 removes the substrate W after the exposure processing and the heat treatment (PEB processing) placed on the heating unit PHP of the lower heat treatment unit 104 (FIG. 10) adjacent to the cleaning / drying processing block 14A.
  • PEB processing exposure processing and the heat treatment
  • the processing contents of the substrate W in the lower development processing unit 30 and the lower heat treatment unit 104 are the same as the processing contents of the substrate W in the upper development processing unit 30 and the upper heat treatment unit 103, respectively.
  • the transport device 141 removes the substrate W placed on the mounting / buffer units PB1 and PB2 (FIG. 11) from the cleaning / drying processing unit SD1 of the cleaning / drying processing unit 161 (FIG. 9). ). Subsequently, the transfer device 141 transfers the substrate W from the cleaning / drying processing unit SD1 to the mounting / cooling unit PCP (FIG. 11). In this case, after the cleaning and drying processing of the substrate W is performed in the cleaning / drying processing unit SD1, the substrate W is cooled to a temperature suitable for the exposure processing in the exposure device 15 (FIG. 8) in the mounting and cooling unit PCP. Is done.
  • the transfer device 142 (FIG. 8) transfers the substrate W after the exposure processing placed on the substrate placement part P9 to the cleaning / drying processing unit SD2 (FIG. 10) of the cleaning / drying processing part 162. Further, the transfer device 142 transfers the substrate W after the cleaning and drying processing from the cleaning and drying processing unit SD2 to the heating unit PHP of the upper heat treatment unit 103 or the heating unit PHP of the lower heat treatment unit 104. In this heating unit PHP, the substrate W is subjected to PEB processing by being heated to 100 ° C. to 200 ° C.
  • the carrying device 143 (FIG. 8) carries the substrate W before the exposure processing placed on the placing / cooling unit PCP to the exposure device 15.
  • the transport device 143 takes out the substrate W after the exposure processing from the exposure device 15 and transports the substrate W to the substrate platform P9.
  • the photosensitive resist film F2 is formed on the entire surface of the substrate W to be processed so as to cover not only the peripheral portion of the substrate W but also the lower layer film F1,
  • the photosensitive resist film F3 is formed on the photosensitive resist film F2. Therefore, the metal-containing resist film F4 is formed with a uniform thickness on the photosensitive resist film F3 without rising near the periphery of the substrate W.
  • the metal component of the metal-containing resist film F4 remains on the outer peripheral portion of the photosensitive resist film F3 when the outer peripheral portion of the metal-containing resist film F4 is removed, the metal component of the photosensitive resist film F3 is removed. The entire outer peripheral portion is removed. Furthermore, even when the metal component of the metal-containing resist film F4 remains on the outer peripheral portion of the photosensitive resist film F2 when the metal-containing resist film F4 is developed, the metal component remains in the outer peripheral portion of the photosensitive resist film F2. Removed.
  • an unprocessed substrate W is carried into the substrate processing apparatus 100, and the lower layer film F1 is formed on the surface to be processed of the substrate W by the substrate processing apparatus 100.
  • the present invention is not limited to this.
  • the substrate W having the lower layer film F1 formed on the surface to be processed by another apparatus may be carried into the substrate processing apparatus 100.
  • the lower layer film F1 is not formed by the substrate processing apparatus 100. Therefore, the coating processing unit 20 may not include the coating nozzle 23a for forming the lower layer film F1.
  • the substrate processing may be performed in another order.
  • the edge exposure process of FIG. 6C may be performed between the edge rinse process of FIG. 7B and the edge rinse process of FIG. 7C.
  • the edge exposure processing of FIG. 12C may be performed between the edge rinsing processing of FIG. 13A and the edge rinsing processing of FIG. 13B.
  • the coating unit 20 includes the plurality of coating nozzles 23, but the present invention is not limited to this.
  • the coating processing unit 20 may include a single coating nozzle 23, and the coating nozzle 23 may be configured to be able to discharge a plurality of types of coating liquids.
  • the coating processing unit 20 includes the plurality of edge rinse nozzles 25, but the present invention is not limited to this.
  • the coating processing unit 20 may include a single edge rinse nozzle 25, and the edge rinse nozzle 25 may be configured to be able to discharge a plurality of types of rinse liquids.
  • the developing liquid and the rinsing liquid in the developing block 13 are used as the developing liquid and the rinsing liquid in the developing block 13. Therefore, a mechanism for separating and collecting the developing solution and the rinsing solution may be provided in the developing block 13. In these cases, the disposal cost of the processing solution can be reduced.
  • the lower layer film F1 is an example of the film to be processed
  • the photosensitive resist film F2 is an example of the photosensitive coating film or the first photosensitive coating film
  • the photosensitive resist film F3 is the second photosensitive coating film
  • the metal-containing resist film F4 is an example of the metal-containing coating liquid.
  • the coating nozzle 23b is an example of a photosensitive coating liquid supply unit or a first photosensitive coating liquid supply unit
  • the coating nozzle 23c is an example of a metal-containing coating liquid supply unit
  • the coating nozzle 23d is a second photosensitive coating liquid supply unit. It is an example of a liquid supply unit.
  • the edge exposure section 40 is an example of an edge exposure section
  • the edge exposure sections 40a and 40b are examples of first and second edge exposure sections, respectively
  • the edge rinse nozzles 25b, 25c and 35 are first to third, respectively.
  • 5 is an example of a removing liquid supply unit.
  • the substrate processing apparatus 100 is an example of a substrate processing apparatus
  • the exposure apparatus 15 is an example of an exposure apparatus
  • the developing nozzle 33 is an example of a developer supply unit.

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Abstract

A photosensitive resist film (F2) exposed on the outer periphery is formed on a processing surface of a substrate so as to cover an underlayer film (F1), and a metal-containing resist film (F4) is formed on the photosensitive resist film (F2). After the outer periphery of the metal-containing resist film (F4) has been removed, the outer periphery of the photosensitive resist film (F2) is removed. Or, a first photosensitive resist film exposed on the outer periphery is formed on a processing surface of a substrate so as to cover an underlayer film (F1), a second photosensitive resist film exposed on the outer periphery is formed on the first photosensitive resist film, and a metal-containing resist film is formed on the second photosensitive resist film. After the outer periphery of the metal-containing resist film has been removed, the outer periphery of the second photosensitive resist film is removed. After developing the metal-containing resist film, the outer periphery of the first photosensitive resist film is removed.

Description

基板処理装置および基板処理方法Substrate processing apparatus and substrate processing method
　本発明は、基板に処理を行う基板処理装置および基板処理方法に関する。 The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.
　半導体デバイス等の製造におけるリソグラフィ工程では、基板の上面に塗布液が吐出されることにより塗布膜が形成される。ここで、基板の周縁部に塗布膜が存在すると、基板を搬送する搬送機構が基板の周縁部を把持した際に、塗布膜の一部が剥離してパーティクルとなる。そこで、基板の周縁部に有機溶剤が吐出されることにより基板の周縁部の塗布膜が溶解される。これにより、基板の周縁部の塗布膜が除去される。 リ ソ グ ラ フ ィ In a lithography step in the manufacture of a semiconductor device or the like, a coating film is formed by discharging a coating liquid on the upper surface of a substrate. Here, if the coating film is present on the peripheral edge of the substrate, when the transport mechanism for transporting the substrate grips the peripheral edge of the substrate, a part of the coating film is peeled off to become particles. Then, the coating film on the peripheral portion of the substrate is dissolved by discharging the organic solvent to the peripheral portion of the substrate. Thereby, the coating film on the peripheral portion of the substrate is removed.
　近年、より微細なパターンを形成するために、金属を含有する金属含有塗布膜を塗布膜として基板上に形成することが研究されている。この構成においては、基板の周縁部に有機溶剤が吐出された場合でも、金属含有塗布膜の金属成分が除去されず、基板の周縁部上に残存することが確認されている。そのため、基板の周縁部に残存した金属成分により基板処理装置および他の露光装置等が汚染することとなる。 In recent years, formation of a metal-containing coating film containing metal as a coating film on a substrate has been studied in order to form a finer pattern. In this configuration, it has been confirmed that even when the organic solvent is discharged to the peripheral portion of the substrate, the metal component of the metal-containing coating film is not removed and remains on the peripheral portion of the substrate. For this reason, the substrate processing apparatus and other exposure apparatuses are contaminated by the metal component remaining on the peripheral edge of the substrate.
　特許文献１には、金属含有塗布膜とは異なるが、金属を含有するハードマスク膜を除去する塗布処理方法が記載されている。この方法においては、基板の周縁部にネガ用フォトレジスト液からなるマスキング膜が形成される。次に、基板の表面にハードマスク膜が形成される。続いて、有機溶剤からなるハードマスク膜除去液により基板の周縁部のハードマスク膜が除去される。その後、ネガ用フォトレジストを溶解するマスキング膜除去液によりマスキング膜が除去される。
特開２０１４－４５１７１号公報 Patent Literature 1 discloses a coating method for removing a metal-containing hard mask film, which is different from a metal-containing coating film. In this method, a masking film made of a negative photoresist solution is formed on the periphery of the substrate. Next, a hard mask film is formed on the surface of the substrate. Subsequently, the hard mask film at the peripheral portion of the substrate is removed by a hard mask film removing solution made of an organic solvent. Thereafter, the masking film is removed by a masking film removing solution that dissolves the negative photoresist.
JP 2014-45171 A
　特許文献１に記載の塗布処理方法を用いることにより、基板の周縁部の金属成分をより確実に除去することが可能である。しかしながら、この塗布処理方法においては、金属含有塗布膜が基板の周縁部近傍で盛り上がった形状に形成される。そのため、基板の周縁部近傍の金属含有塗布膜の領域を有効に利用することができず、歩留まりが低下する。 金属 By using the coating treatment method described in Patent Document 1, it is possible to more reliably remove the metal component at the peripheral portion of the substrate. However, in this coating treatment method, the metal-containing coating film is formed in a raised shape near the periphery of the substrate. Therefore, the area of the metal-containing coating film near the periphery of the substrate cannot be effectively used, and the yield decreases.
　本発明の目的は、金属汚染の発生を防止しつつ基板上に均一な膜厚を有する金属含有塗布膜を形成することが可能な基板処理装置および基板処理方法を提供することである。 An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of forming a metal-containing coating film having a uniform thickness on a substrate while preventing the occurrence of metal contamination.
　（１）本発明の一局面に従う基板処理装置は、被処理膜が形成された被処理面を有する基板に感光性塗布液を供給することにより被処理膜を覆うように基板の被処理面に感光性塗布膜を形成する感光性塗布液供給部と、基板の被処理面の周縁部上に重なる感光性塗布膜の外周部を露光するエッジ露光部と、感光性塗布膜上に金属を含有する塗布液を金属含有塗布液として供給することにより感光性塗布膜上に金属含有塗布膜を形成する金属含有塗布液供給部と、基板の被処理面の周縁部に重なる金属含有塗布膜の外周部が除去されるように金属含有塗布膜に第１の除去液を供給する第１の除去液供給部と、金属含有塗布膜の外周部が除去された後に、感光性塗布膜の露光された外周部が除去されるように感光性塗布膜に第２の除去液を供給する第２の除去液供給部とを備える。 (1) In a substrate processing apparatus according to one aspect of the present invention, a photosensitive coating solution is supplied to a substrate having a surface to be processed on which a film to be processed is formed, so that the surface of the substrate is processed so as to cover the film to be processed. Contains a photosensitive coating solution supply unit that forms a photosensitive coating film, an edge exposure unit that exposes the outer periphery of the photosensitive coating film that overlaps the periphery of the processing surface of the substrate, and contains a metal on the photosensitive coating film. Metal-containing coating liquid supply section for forming a metal-containing coating film on a photosensitive coating film by supplying the coating liquid to be applied as a metal-containing coating liquid, and the outer periphery of the metal-containing coating film overlapping the peripheral portion of the processing surface of the substrate A first removing liquid supply unit for supplying a first removing liquid to the metal-containing coating film so that the portion is removed, and the photosensitive coating film is exposed after the outer peripheral portion of the metal-containing coating film is removed. Supplying a second removal liquid to the photosensitive coating film so that the outer periphery is removed That and a second removing solution supply unit.
　この基板処理装置においては、感光性塗布液供給部により基板に感光性塗布液が供給されることにより基板の被処理面に感光性塗布膜が形成される。エッジ露光部により感光性塗布膜の外周部が露光される。金属含有塗布液供給部により感光性塗布膜上に金属含有塗布液が供給されることにより感光性塗布膜上に金属含有塗布膜が形成される。第１の除去液供給部により金属含有塗布膜に第１の除去液が供給されることにより金属含有塗布膜の外周部が除去される。金属含有塗布膜の外周部が除去された後に、第２の除去液供給部により感光性塗布膜に第２の除去液が供給されることにより感光性塗布膜の露光された外周部が除去される。 In this substrate processing apparatus, the photosensitive coating liquid is supplied to the substrate by the photosensitive coating liquid supply unit, so that the photosensitive coating film is formed on the surface to be processed of the substrate. The outer periphery of the photosensitive coating film is exposed by the edge exposure unit. The metal-containing coating film is formed on the photosensitive coating film by supplying the metal-containing coating solution onto the photosensitive coating film by the metal-containing coating solution supply unit. By supplying the first removing liquid to the metal-containing coating film by the first removing liquid supply unit, the outer peripheral portion of the metal-containing coating film is removed. After the outer peripheral portion of the metal-containing coating film is removed, the exposed outer peripheral portion of the photosensitive coating film is removed by supplying the second removing liquid to the photosensitive coating film by the second removing liquid supply unit. You.
　この構成によれば、感光性塗布膜は、基板の周縁部のみでなく被処理膜を覆うように基板の被処理面の全面に形成される。したがって、金属含有塗布膜は、基板の周縁部近傍で盛り上がることなく感光性塗布膜上に均一な厚みで形成される。また、金属含有塗布膜の外周部が除去された際に、感光性塗布膜の外周部に金属含有塗布膜の金属成分が残存した場合でも、当該金属成分が感光性塗布膜の外周部ごと除去される。そのため、搬送機構が基板の周縁部を保持した場合でも、搬送機構に金属成分が付着しない。その結果、金属汚染の発生を防止しつつ基板上に均一な膜厚を有する金属含有塗布膜を形成することができる。 According to this configuration, the photosensitive coating film is formed on the entire surface of the substrate to be processed so as to cover not only the peripheral portion of the substrate but also the film to be processed. Therefore, the metal-containing coating film is formed with a uniform thickness on the photosensitive coating film without rising near the periphery of the substrate. Further, when the outer peripheral portion of the metal-containing coating film is removed, even if the metal component of the metal-containing coating film remains on the outer peripheral portion of the photosensitive coating film, the metal component is removed along with the outer peripheral portion of the photosensitive coating film. Is done. Therefore, even when the transport mechanism holds the peripheral portion of the substrate, the metal component does not adhere to the transport mechanism. As a result, it is possible to form a metal-containing coating film having a uniform thickness on the substrate while preventing the occurrence of metal contamination.
　（２）第１の除去液は、金属含有塗布膜を溶かしかつ感光性塗布膜を溶かさない液であり、第２の除去液は、感光性塗布膜を溶かしかつ金属含有塗布膜を溶かさない液であってもよい。この場合、選択的にかつ容易に金属含有塗布膜および感光性塗布膜の外周部を順次除去することができる。 (2) The first removing liquid is a liquid that dissolves the metal-containing coating film and does not dissolve the photosensitive coating film, and the second removing liquid is a liquid that dissolves the photosensitive coating film and does not dissolve the metal-containing coating film. It may be. In this case, the outer peripheral portions of the metal-containing coating film and the photosensitive coating film can be sequentially and selectively removed easily.
　（３）第１の除去液は有機溶媒を含み、第２の除去液はポジティブトーン現像を行う現像液を含んでもよい。この場合、第１の除去液により感光性塗布膜を溶かすことなく金属含有塗布膜を溶かすことができる。第２の除去液により金属含有塗布膜を溶かすことなく感光性塗布膜を溶かすことができる。 (3) The first removing liquid may include an organic solvent, and the second removing liquid may include a developer for performing positive tone development. In this case, the metal-containing coating film can be dissolved by the first removing liquid without dissolving the photosensitive coating film. The photosensitive coating film can be dissolved by the second removing liquid without dissolving the metal-containing coating film.
　（４）本発明の他の局面に従う基板処理装置は、基板を露光する露光装置を用いた基板処理装置であって、被処理膜が形成された被処理面を有する基板に第１の感光性塗布液を供給することにより被処理膜を覆うように基板の被処理面に第１の感光性塗布膜を形成する第１の感光性塗布液供給部と、第１の感光性塗布液とは感光波長分布が異なる第２の感光性塗布液を第１の感光性塗布膜上に供給することにより第１の感光性塗布膜上に第２の感光性塗布膜を形成する第２の感光性塗布液供給部と、基板の被処理面の周縁部上に重なる第２の感光性塗布膜の外周部を露光する第１のエッジ露光部と、第２の感光性塗布膜上に金属を含有する塗布液を金属含有塗布液として供給することにより第２の感光性塗布膜上に金属含有塗布膜を形成する金属含有塗布液供給部と、基板の被処理面の周縁部に重なる金属含有塗布膜の外周部が除去されるように金属含有塗布膜に第１の除去液を供給する第１の除去液供給部と、金属含有塗布膜の外周部が除去された後に、第２の感光性塗布膜の露光された外周部が除去されるように第２の感光性塗布膜に第２の除去液を供給する第２の除去液供給部と、基板の被処理面の周縁部に重なる第１の感光性塗布膜の外周部を露光する第２のエッジ露光部と、露光装置により所定のパターンに露光された金属含有塗布膜が現像されるように金属含有塗布膜に現像液を供給する現像液供給部と、金属含有塗布膜が現像された後に、第１の感光性塗布膜の露光された外周部が除去されるように第１の感光性塗布膜に第３の除去液を供給する第３の除去液供給部とを備える。 (4) A substrate processing apparatus according to another aspect of the present invention is a substrate processing apparatus using an exposure apparatus that exposes a substrate, wherein a first photosensitive substrate is provided on a substrate having a surface to be processed on which a film to be processed is formed. A first photosensitive coating liquid supply unit that forms a first photosensitive coating film on a processing surface of a substrate so as to cover a processing target film by supplying a coating liquid, and a first photosensitive coating liquid. Forming a second photosensitive coating film on the first photosensitive coating film by supplying a second photosensitive coating solution having a different photosensitive wavelength distribution on the first photosensitive coating film; A coating liquid supply unit, a first edge exposure unit that exposes an outer peripheral portion of a second photosensitive coating film overlapping on a peripheral edge of a processing surface of the substrate, and a metal on the second photosensitive coating film The metal-containing coating film is formed on the second photosensitive coating film by supplying the coating solution to be applied as the metal-containing coating solution. A metal-containing coating liquid supply unit and a first removing liquid supply for supplying a first removing liquid to the metal-containing coating film such that an outer peripheral portion of the metal-containing coating film overlapping a peripheral portion of the processing surface of the substrate is removed. And supplying the second removing liquid to the second photosensitive coating film so that the exposed outer peripheral portion of the second photosensitive coating film is removed after the outer portion of the second photosensitive coating film is removed. A second removing liquid supply unit, a second edge exposure unit that exposes an outer peripheral portion of the first photosensitive coating film overlapping a peripheral edge of the processing surface of the substrate, and a second pattern exposure unit that is exposed to a predetermined pattern by an exposure device. A developer supply unit for supplying a developer to the metal-containing coating film so that the metal-containing coating film is developed, and an exposed outer peripheral portion of the first photosensitive coating film after the metal-containing coating film is developed. Supply of the third removal liquid to the first photosensitive coating film so that the third removal liquid is removed. Provided with a door.
　この基板処理装置においては、第１の感光性塗布液供給部により基板に第１の感光性塗布液が供給されることにより基板の被処理面に第１の感光性塗布膜が形成される。第２の感光性塗布液供給部により第１の感光性塗布膜上に第２の感光性塗布液が供給されることにより第１の感光性塗布膜上に第２の感光性塗布膜が形成される。第２の感光性塗布膜の外周部が第１のエッジ露光部により露光される。金属含有塗布液供給部により第２の感光性塗布膜上に金属含有塗布液が供給されることにより第２の感光性塗布膜上に金属含有塗布膜が形成される。 In this substrate processing apparatus, the first photosensitive coating liquid is supplied to the substrate by the first photosensitive coating liquid supply unit, so that the first photosensitive coating film is formed on the processed surface of the substrate. The second photosensitive coating liquid is supplied onto the first photosensitive coating film by the second photosensitive coating liquid supply unit, so that the second photosensitive coating film is formed on the first photosensitive coating film. Is done. The outer peripheral part of the second photosensitive coating film is exposed by the first edge exposure part. The metal-containing coating film is formed on the second photosensitive coating film by supplying the metal-containing coating solution onto the second photosensitive coating film by the metal-containing coating liquid supply unit.
　第１の除去液供給部により金属含有塗布膜に第１の除去液が供給されることにより金属含有塗布膜の外周部が除去される。金属含有塗布膜の外周部が除去された後に、第２の除去液供給部により第２の感光性塗布膜に第２の除去液が供給されることにより第２の感光性塗布膜の露光された外周部が除去される。第２のエッジ露光部により第１の感光性塗布膜の外周部が露光される。現像液供給部により金属含有塗布膜に現像液が供給されることにより露光装置により所定のパターンに露光された金属含有塗布膜が現像される。金属含有塗布膜が現像された後に、第３の除去液供給部により第１の感光性塗布膜に第３の除去液が供給されることにより第１の感光性塗布膜の露光された外周部が除去される。 (4) The outer peripheral portion of the metal-containing coating film is removed by supplying the first removing liquid to the metal-containing coating film by the first removing liquid supply unit. After the outer peripheral portion of the metal-containing coating film is removed, the second photosensitive coating film is exposed to the second photosensitive coating film by supplying the second removing liquid to the second photosensitive coating film by the second removing liquid supply unit. The outer peripheral portion is removed. The outer periphery of the first photosensitive coating film is exposed by the second edge exposure unit. By supplying a developing solution to the metal-containing coating film by the developing solution supply unit, the metal-containing coating film exposed to a predetermined pattern by the exposure device is developed. After the metal-containing coating film is developed, the third removing liquid is supplied to the first photosensitive coating film by the third removing liquid supply unit, so that the exposed outer peripheral portion of the first photosensitive coating film is exposed. Is removed.
　この構成によれば、第１の感光性塗布膜は基板の周縁部のみでなく被処理膜を覆うように基板の被処理面の全面に形成され、第２の感光性塗布膜は第１の感光性塗布膜上に形成される。したがって、金属含有塗布膜は、基板の周縁部近傍で盛り上がることなく第２の感光性塗布膜上に均一な厚みで形成される。また、金属含有塗布膜の外周部が除去された際に、第２の感光性塗布膜の外周部に金属含有塗布膜の金属成分が残存した場合でも、当該金属成分が第２の感光性塗布膜の外周部ごと除去される。さらに、金属含有塗布膜が現像された際に、第１の感光性塗布膜の外周部に金属含有塗布膜の金属成分が残存した場合でも、当該金属成分が第１の感光性塗布膜の外周部ごと除去される。そのため、搬送機構が基板の周縁部を保持した場合でも、搬送機構に金属成分が付着しない。その結果、金属汚染の発生を防止しつつ基板上に均一な膜厚を有する金属含有塗布膜を形成することができる。 According to this configuration, the first photosensitive coating film is formed on the entire surface of the substrate to be processed so as to cover not only the peripheral portion of the substrate but also the film to be processed, and the second photosensitive coating film is formed of the first photosensitive coating film. It is formed on a photosensitive coating film. Therefore, the metal-containing coating film is formed with a uniform thickness on the second photosensitive coating film without rising near the periphery of the substrate. Further, even when the metal component of the metal-containing coating film remains on the outer peripheral portion of the second photosensitive coating film when the outer peripheral portion of the metal-containing coating film is removed, the metal component is not removed from the second photosensitive coating film. The entire periphery of the film is removed. Further, when the metal-containing coating film is developed, even if the metal component of the metal-containing coating film remains on the outer peripheral portion of the first photosensitive coating film, the metal component remains on the outer periphery of the first photosensitive coating film. All copies are removed. Therefore, even when the transport mechanism holds the peripheral portion of the substrate, the metal component does not adhere to the transport mechanism. As a result, it is possible to form a metal-containing coating film having a uniform thickness on the substrate while preventing the occurrence of metal contamination.
　（５）第１の除去液は、金属含有塗布膜を溶かしかつ第１および第２の感光性塗布膜を溶かさない液であり、第２の除去液は、第２の感光性塗布膜を溶かしかつ金属含有塗布膜を溶かさない液であり、第３の除去液は、第１の感光性塗布膜を溶かしかつ金属含有塗布膜を溶かさない液であり、現像液は、金属含有塗布膜を溶かしかつ第１および第２の感光性塗布膜を溶かさない液であってもよい。この場合、選択的にかつ容易に金属含有塗布膜、第２の感光性塗布膜および第１の感光性塗布膜の外周部を順次除去しつつ金属含有塗布膜を現像することができる。 (5) The first removing solution is a solution that dissolves the metal-containing coating film and does not dissolve the first and second photosensitive coating films, and the second removing solution dissolves the second photosensitive coating film. The third removing liquid is a liquid that does not dissolve the first photosensitive coating film and does not dissolve the metal-containing coating film, and the developing solution is a liquid that does not dissolve the metal-containing coating film. Further, the liquid may not dissolve the first and second photosensitive coating films. In this case, it is possible to selectively and easily develop the metal-containing coating film while sequentially removing the outer peripheral portions of the metal-containing coating film, the second photosensitive coating film, and the first photosensitive coating film.
　（６）第１の除去液は有機溶媒を含み、第２の除去液はポジティブトーン現像を行う現像液を含み、第３の除去液はポジティブトーン現像を行う現像液を含み、現像液はネガティブトーン現像を行う現像液を含んでもよい。 (6) The first removal solution contains an organic solvent, the second removal solution contains a developer for performing positive tone development, the third removal solution contains a developer for performing positive tone development, and the developer is negative. It may contain a developer for performing tone development.
　この場合、第１の除去液により第１および第２の感光性塗布膜を溶かすことなく金属含有塗布膜を溶かすことができる。第２の除去液により金属含有塗布膜を溶かすことなく第２の感光性塗布膜を溶かすことができる。第３の除去液により金属含有塗布膜を溶かすことなく第１の感光性塗布膜を溶かすことができる。現像液により第１および第２の感光性塗布膜を溶かすことなく金属含有塗布膜を溶かすことができる。 In this case, the metal-containing coating film can be dissolved by the first removing liquid without dissolving the first and second photosensitive coating films. The second photosensitive coating film can be dissolved by the second removing liquid without dissolving the metal-containing coating film. The first photosensitive coating film can be dissolved by the third removing liquid without dissolving the metal-containing coating film. The metal-containing coating film can be dissolved by the developer without dissolving the first and second photosensitive coating films.
　（７）第１の感光性塗布膜は、ｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうちいずれかのレジスト膜を含み、第２の感光性塗布膜は、ｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうち他のレジスト膜を含んでもよい。この場合、互いに感光波長分布が異なる第１の感光性塗布膜と第２の感光性塗布膜とを容易に形成することができる。 (7) The first photosensitive coating film includes any one of an i-line resist film, a krypton fluoride resist film and an argon fluoride resist film, and the second photosensitive coating film is an i-line resist film. Other resist films of the film, the krypton fluoride resist film, and the argon fluoride resist film may be included. In this case, the first photosensitive coating film and the second photosensitive coating film having different photosensitive wavelength distributions can be easily formed.
　（８）本発明のさらに他の局面に従う基板処理方法は、被処理膜が形成された被処理面を有する基板に感光性塗布液供給部により感光性塗布液を供給することにより被処理膜を覆うように基板の被処理面に感光性塗布膜を形成するステップと、基板の被処理面の周縁部上に重なる感光性塗布膜の外周部をエッジ露光部により露光するステップと、感光性塗布膜上に金属を含有する塗布液を金属含有塗布液供給部により金属含有塗布液として供給することにより感光性塗布膜上に金属含有塗布膜を形成するステップと、基板の被処理面の周縁部に重なる金属含有塗布膜の外周部が除去されるように金属含有塗布膜に第１の除去液供給部により第１の除去液を供給するステップと、金属含有塗布膜の外周部が除去された後に、感光性塗布膜の露光された外周部が除去されるように感光性塗布膜に第２の除去液供給部により第２の除去液を供給するステップとを含む。 (8) In a substrate processing method according to still another aspect of the present invention, a photosensitive coating solution is supplied to a substrate having a surface to be processed on which a film to be processed is formed by supplying the photosensitive coating solution with a photosensitive coating solution. Forming a photosensitive coating film on the processing surface of the substrate so as to cover; exposing an outer peripheral portion of the photosensitive coating film overlapping the peripheral portion of the processing surface of the substrate by an edge exposure unit; Forming a metal-containing coating film on the photosensitive coating film by supplying a coating solution containing a metal on the film as a metal-containing coating solution by a metal-containing coating solution supply unit; and a peripheral portion of a surface to be processed of the substrate. Supplying a first removing liquid to the metal-containing coating film by the first removing liquid supply unit such that an outer peripheral portion of the metal-containing coating film overlapping the metal film is removed, and the outer peripheral portion of the metal-containing coating film is removed. Later, exposure of the photosensitive coating film The second removing solution supply portion to the photosensitive coating film as been an outer peripheral portion is removed and supplying a second removal solution.
　この基板処理方法によれば、金属含有塗布膜は、基板の周縁部近傍で盛り上がることなく感光性塗布膜上に均一な厚みで形成される。また、金属含有塗布膜の外周部が除去された際に、感光性塗布膜の外周部に金属含有塗布膜の金属成分が残存した場合でも、当該金属成分が感光性塗布膜の外周部ごと除去される。そのため、搬送機構が基板の周縁部を保持した場合でも、搬送機構に金属成分が付着しない。その結果、金属汚染の発生を防止しつつ基板上に均一な膜厚を有する金属含有塗布膜を形成することができる。 According to this substrate processing method, the metal-containing coating film is formed with a uniform thickness on the photosensitive coating film without being raised near the periphery of the substrate. Further, when the outer peripheral portion of the metal-containing coating film is removed, even if the metal component of the metal-containing coating film remains on the outer peripheral portion of the photosensitive coating film, the metal component is removed along with the outer peripheral portion of the photosensitive coating film. Is done. Therefore, even when the transport mechanism holds the peripheral portion of the substrate, the metal component does not adhere to the transport mechanism. As a result, it is possible to form a metal-containing coating film having a uniform thickness on the substrate while preventing the occurrence of metal contamination.
　（９）第１の除去液を供給するステップは、金属含有塗布膜を溶かしかつ感光性塗布膜を溶かさない液を供給することを含み、第２の除去液を供給するステップは、感光性塗布膜を溶かしかつ金属含有塗布膜を溶かさない液を供給することを含んでもよい。この場合、選択的にかつ容易に金属含有塗布膜および感光性塗布膜の外周部を順次除去することができる。 (9) The step of supplying the first removing liquid includes supplying a liquid that dissolves the metal-containing coating film and does not dissolve the photosensitive coating film, and the step of supplying the second removing liquid includes photosensitive coating. This may include providing a liquid that dissolves the film and does not dissolve the metal-containing coating film. In this case, the outer peripheral portions of the metal-containing coating film and the photosensitive coating film can be sequentially and selectively removed easily.
　（１０）第１の除去液を供給するステップは、有機溶媒を供給することを含み、第２の除去液を供給するステップは、現像液を供給することによりポジティブトーン現像を行うことを含んでもよい。この場合、第１の除去液により感光性塗布膜を溶かすことなく金属含有塗布膜を溶かすことができる。第２の除去液により金属含有塗布膜を溶かすことなく感光性塗布膜を溶かすことができる。 (10) The step of supplying the first removing liquid may include supplying an organic solvent, and the step of supplying the second removing liquid may include supplying a developer to perform positive tone development. Good. In this case, the metal-containing coating film can be dissolved by the first removing liquid without dissolving the photosensitive coating film. The photosensitive coating film can be dissolved by the second removing liquid without dissolving the metal-containing coating film.
　（１１）本発明のさらに他の局面に従う基板処理方法は、基板を露光する露光装置を用いた基板処理方法であって、被処理膜が形成された被処理面を有する基板に第１の感光性塗布液供給部により第１の感光性塗布液を供給することにより被処理膜を覆うように基板の被処理面に第１の感光性塗布膜を形成するステップと、第２の感光性塗布液供給部により第１の感光性塗布液とは感光波長分布が異なる第２の感光性塗布液を第１の感光性塗布膜上に供給することにより第１の感光性塗布膜上に第２の感光性塗布膜を形成するステップと、基板の被処理面の周縁部上に重なる第２の感光性塗布膜の外周部を第１のエッジ露光部により露光するステップと、第２の感光性塗布膜上に金属を含有する塗布液を金属含有塗布液供給部により金属含有塗布液として供給することにより第２の感光性塗布膜上に金属含有塗布膜を形成するステップと、基板の被処理面の周縁部に重なる金属含有塗布膜の外周部が除去されるように金属含有塗布膜に第１の除去液供給部により第１の除去液を供給するステップと、金属含有塗布膜の外周部が除去された後に、第２の感光性塗布膜の露光された外周部が除去されるように第２の感光性塗布膜に第２の除去液供給部により第２の除去液を供給するステップと、基板の被処理面の周縁部に重なる第１の感光性塗布膜の外周部を第２のエッジ露光部により露光するステップと、露光装置により所定のパターンに露光された金属含有塗布膜が現像されるように金属含有塗布膜に現像液供給部により現像液を供給するステップと、金属含有塗布膜が現像された後に、第１の感光性塗布膜の露光された外周部が除去されるように第１の感光性塗布膜に第３の除去液供給部により第３の除去液を供給するステップとを含む。 (11) A substrate processing method according to still another aspect of the present invention is a substrate processing method using an exposure apparatus that exposes a substrate, wherein a first photosensitive substrate is provided with a target surface on which a target film is formed. Forming a first photosensitive coating film on the surface to be processed of the substrate so as to cover the film to be processed by supplying the first photosensitive coating solution by the photosensitive coating solution supply unit; A second photosensitive coating liquid having a different photosensitive wavelength distribution from that of the first photosensitive coating liquid is supplied onto the first photosensitive coating film by the liquid supply unit, so that a second photosensitive coating liquid is formed on the first photosensitive coating film. Forming a photosensitive coating film on the substrate, exposing an outer peripheral portion of the second photosensitive coating film on the peripheral portion of the processing surface of the substrate by a first edge exposure section, The metal-containing coating liquid is supplied to the coating film by the metal-containing coating liquid supply unit. Forming a metal-containing coating film on the second photosensitive coating film by supplying it as a coating solution; and removing the metal so as to remove the outer peripheral portion of the metal-containing coating film overlapping the peripheral portion of the processing surface of the substrate. Supplying the first removing liquid to the containing coating film by the first removing liquid supply unit, and removing the exposed outer peripheral portion of the second photosensitive coating film after the outer peripheral portion of the metal containing coating film is removed. Supplying a second removal liquid to the second photosensitive coating film so as to be removed by the second removal liquid supply unit; and removing the first photosensitive coating film overlapping the peripheral edge of the processing surface of the substrate. Exposing the outer peripheral portion by a second edge exposing unit, and supplying a developing solution to the metal-containing coating film by a developing solution supply unit such that the metal-containing coating film exposed to a predetermined pattern by the exposure device is developed. Step, the metal-containing coating film is developed Later, and supplying the first photosensitive third third remover by removing solution supply portion of the first photosensitive coating film as exposed outer peripheral portion is removed of the coating film.
　この基板処理方法によれば、金属含有塗布膜は、基板の周縁部近傍で盛り上がることなく第２の感光性塗布膜上に均一な厚みで形成される。また、金属含有塗布膜の外周部が除去された際に、第２の感光性塗布膜の外周部に金属含有塗布膜の金属成分が残存した場合でも、当該金属成分が第２の感光性塗布膜の外周部ごと除去される。さらに、金属含有塗布膜が現像された際に、第１の感光性塗布膜の外周部に金属含有塗布膜の金属成分が残存した場合でも、当該金属成分が第１の感光性塗布膜の外周部ごと除去される。そのため、搬送機構が基板の周縁部を保持した場合でも、搬送機構に金属成分が付着しない。その結果、金属汚染の発生を防止しつつ基板上に均一な膜厚を有する金属含有塗布膜を形成することができる。 According to this substrate processing method, the metal-containing coating film is formed with a uniform thickness on the second photosensitive coating film without being raised near the periphery of the substrate. Further, even when the metal component of the metal-containing coating film remains on the outer peripheral portion of the second photosensitive coating film when the outer peripheral portion of the metal-containing coating film is removed, the metal component is not removed from the second photosensitive coating film. The entire periphery of the film is removed. Further, when the metal-containing coating film is developed, even if the metal component of the metal-containing coating film remains on the outer peripheral portion of the first photosensitive coating film, the metal component remains on the outer periphery of the first photosensitive coating film. All copies are removed. Therefore, even when the transport mechanism holds the peripheral portion of the substrate, the metal component does not adhere to the transport mechanism. As a result, it is possible to form a metal-containing coating film having a uniform thickness on the substrate while preventing the occurrence of metal contamination.
　（１２）第１の除去液を供給するステップは、金属含有塗布膜を溶かしかつ第１および第２の感光性塗布膜を溶かさない液を供給することを含み、第２の除去液を供給するステップは、第２の感光性塗布膜を溶かしかつ金属含有塗布膜を溶かさない液を供給することを含み、現像液を供給するステップは、金属含有塗布膜を溶かしかつ第１および第２の感光性塗布膜を溶かさない液を供給することを含み、第３の除去液を供給するステップは、第１の感光性塗布膜を溶かしかつ金属含有塗布膜を溶かさない液を供給することを含んでもよい。この場合、選択的にかつ容易に金属含有塗布膜、第２の感光性塗布膜および第１の感光性塗布膜の外周部を順次除去しつつ金属含有塗布膜を現像することができる。 (12) The step of supplying the first removing liquid includes supplying a liquid that dissolves the metal-containing coating film and does not dissolve the first and second photosensitive coating films, and supplies the second removing liquid. The step includes supplying a liquid that dissolves the second photosensitive coating film and does not dissolve the metal-containing coating film, and the step of supplying a developing solution includes dissolving the metal-containing coating film and using the first and second photosensitive films. Supplying a liquid that does not dissolve the conductive coating film, and supplying the third removal liquid may include supplying a liquid that dissolves the first photosensitive coating film and does not dissolve the metal-containing coating film. Good. In this case, it is possible to selectively and easily develop the metal-containing coating film while sequentially removing the outer peripheral portions of the metal-containing coating film, the second photosensitive coating film, and the first photosensitive coating film.
　（１３）第１の除去液を供給するステップは、有機溶媒を供給することを含み、第２の除去液を供給するステップは、現像液を供給することによりポジティブトーン現像を行うことを含み、現像液を供給するステップは、現像液を供給することによりネガティブトーン現像を行うことを含み、第３の除去液を供給するステップは、現像液を供給することによりポジティブトーン現像を行うことを含んでもよい。 (13) The step of supplying the first removal liquid includes supplying an organic solvent, and the step of supplying the second removal liquid includes performing positive tone development by supplying a developer. The step of supplying a developer includes performing a negative tone development by supplying a developer, and the step of supplying a third removal liquid includes performing a positive tone development by supplying a developer. May be.
　この場合、第１の除去液により第１および第２の感光性塗布膜を溶かすことなく金属含有塗布膜を溶かすことができる。第２の除去液により金属含有塗布膜を溶かすことなく第２の感光性塗布膜を溶かすことができる。現像液により第１および第２の感光性塗布膜を溶かすことなく金属含有塗布膜を溶かすことができる。第３の除去液により金属含有塗布膜を溶かすことなく第１の感光性塗布膜を溶かすことができる。 In this case, the metal-containing coating film can be dissolved by the first removing liquid without dissolving the first and second photosensitive coating films. The second photosensitive coating film can be dissolved by the second removing liquid without dissolving the metal-containing coating film. The metal-containing coating film can be dissolved by the developer without dissolving the first and second photosensitive coating films. The first photosensitive coating film can be dissolved by the third removing liquid without dissolving the metal-containing coating film.
　（１４）第１の感光性塗布膜を形成するステップは、ｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうちいずれかのレジスト膜を形成することを含み、第２の感光性塗布膜を形成するステップは、ｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうち他のレジスト膜を形成することを含んでもよい。この場合、互いに感光波長分布が異なる第１の感光性塗布膜と第２の感光性塗布膜とを容易に形成することができる。 (14) The step of forming the first photosensitive coating film includes forming any one of an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film, and forming the second photosensitive film. The step of forming the conductive coating film may include forming another resist film among an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film. In this case, the first photosensitive coating film and the second photosensitive coating film having different photosensitive wavelength distributions can be easily formed.
　本発明によれば、金属汚染の発生を防止しつつ基板上に均一な膜厚を有する金属含有塗布膜を形成することができる。 According to the present invention, it is possible to form a metal-containing coating film having a uniform film thickness on a substrate while preventing the occurrence of metal contamination.
図１は本発明の第１の実施の形態に係る基板処理装置の模式的平面図である。FIG. 1 is a schematic plan view of the substrate processing apparatus according to the first embodiment of the present invention. 図２は主として図１の塗布処理部を示す基板処理装置の模式的側面図である。FIG. 2 is a schematic side view of a substrate processing apparatus mainly showing the coating processing section of FIG. 図３は主として図１の熱処理部を示す基板処理装置の模式的側面図である。FIG. 3 is a schematic side view of the substrate processing apparatus mainly showing the heat treatment section of FIG. 図４は主として図１の搬送部を示す側面図である。FIG. 4 is a side view mainly showing the transport unit of FIG. 図５は処理が行われる基板の部分拡大縦断面図である。FIG. 5 is a partially enlarged longitudinal sectional view of a substrate on which processing is performed. 図６は処理が行われる基板の部分拡大縦断面図である。FIG. 6 is a partially enlarged longitudinal sectional view of a substrate on which processing is performed. 図７は処理が行われる基板の部分拡大縦断面図である。FIG. 7 is a partially enlarged longitudinal sectional view of a substrate on which processing is performed. 図８は本発明の第２の実施の形態に係る基板処理装置の模式的平面図である。FIG. 8 is a schematic plan view of the substrate processing apparatus according to the second embodiment of the present invention. 図９は主として図８の塗布処理部、現像処理部および洗浄乾燥処理部を示す基板処理装置の模式的側面図である。FIG. 9 is a schematic side view of the substrate processing apparatus mainly showing the coating processing section, the developing processing section, and the cleaning / drying processing section in FIG. 図１０は主として図８の熱処理部および洗浄乾燥処理部を示す基板処理装置の模式的側面図である。FIG. 10 is a schematic side view of the substrate processing apparatus mainly showing the heat treatment section and the cleaning / drying processing section in FIG. 図１１は主として図８の搬送部を示す側面図である。FIG. 11 is a side view mainly showing the transport unit of FIG. 図１２は第２の実施の形態における処理が行われる基板の部分拡大縦断面図である。FIG. 12 is a partially enlarged longitudinal sectional view of a substrate on which processing according to the second embodiment is performed. 図１３は第２の実施の形態における処理が行われる基板の部分拡大縦断面図である。FIG. 13 is a partially enlarged longitudinal sectional view of a substrate on which processing according to the second embodiment is performed. 図１４は第２の実施の形態における処理が行われる基板の部分拡大縦断面図である。FIG. 14 is a partially enlarged longitudinal sectional view of a substrate on which processing according to the second embodiment is performed.
　以下、本発明の一実施の形態に係る基板処理装置および基板処理方法について図面を用いて説明する。なお、以下の説明において、基板とは、半導体基板、液晶表示装置もしくは有機ＥＬ（Electro Luminescence）表示装置等のＦＰＤ（Flat Panel Display）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板または太陽電池用基板等をいう。 Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the term “substrate” refers to a semiconductor substrate, a flat panel display (FPD) substrate such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk. Refers to a substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, or the like.
　［１］第１の実施の形態
　（１）基板処理装置
　図１は、本発明の第１の実施の形態に係る基板処理装置の模式的平面図である。図１に示すように、基板処理装置１００は、インデクサブロック１１および塗布ブロック１２を備える。 [1] First Embodiment (1) Substrate Processing Apparatus FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 includes an indexer block 11 and a coating block 12.
　インデクサブロック１１は、複数のキャリア載置部１１１および搬送部１１２を含む。各キャリア載置部１１１には、複数の基板Ｗを多段に収納するキャリア１１３が載置される。搬送部１１２には、制御部１１４および搬送装置１１５が設けられる。制御部１１４は、基板処理装置１００の種々の構成要素を制御する。搬送装置１１５は、基板Ｗを保持しつつその基板Ｗを搬送する。 The indexer block 11 includes a plurality of carrier placement units 111 and a transport unit 112. A carrier 113 that stores a plurality of substrates W in multiple stages is placed on each carrier placement section 111. The transport unit 112 includes a control unit 114 and a transport device 115. The control unit 114 controls various components of the substrate processing apparatus 100. The transfer device 115 transfers the substrate W while holding the substrate W.
　塗布ブロック１２は、塗布処理部１２１、搬送部１２２および熱処理部１２３を含む。塗布処理部１２１および熱処理部１２３は、搬送部１２２を挟んで対向するように設けられる。 The coating block 12 includes a coating processing unit 121, a transporting unit 122, and a heat treatment unit 123. The coating processing section 121 and the heat treatment section 123 are provided to face each other with the transport section 122 interposed therebetween.
　図２は、主として図１の塗布処理部１２１を示す基板処理装置１００の模式的側面図である。図２に示すように、塗布処理部１２１には、複数の塗布処理ユニット（スピンコータ）２０が設けられる。各塗布処理ユニット２０は、複数のスピンチャック２１、複数のカップ２２、複数の塗布ノズル２３、移動機構２４、複数のエッジリンスノズル２５および複数のベベルリンスノズル２６（後述する図６（ｂ）参照）を備える。複数のカップ２２は、複数のスピンチャック２１にそれぞれ対応し、対応するスピンチャック２１の周囲を覆うように設けられる。 FIG. 2 is a schematic side view of the substrate processing apparatus 100 mainly showing the coating processing unit 121 of FIG. As shown in FIG. 2, the coating processing unit 121 is provided with a plurality of coating processing units (spin coaters) 20. Each coating processing unit 20 includes a plurality of spin chucks 21, a plurality of cups 22, a plurality of coating nozzles 23, a moving mechanism 24, a plurality of edge rinse nozzles 25, and a plurality of Vebber nozzles 26 (see FIG. 6B described later). ). The plurality of cups 22 respectively correspond to the plurality of spin chucks 21 and are provided so as to cover the periphery of the corresponding spin chuck 21.
　塗布処理ユニット２０においては、スピンチャック２１が、基板Ｗを水平姿勢で吸着保持して回転する。この状態で、いずれかの塗布ノズル２３が移動機構２４により基板Ｗの上方に移動され、その塗布ノズル２３から塗布液が吐出される。これにより、基板Ｗの被処理面上に塗布液が塗布され、基板Ｗの被処理面上に塗布液の膜（以下、塗布膜と呼ぶ。）が形成される。ここで、被処理面とは回路パターン等の各種パターンが形成される基板Ｗの面をいう。 In the coating processing unit 20, the spin chuck 21 rotates while sucking and holding the substrate W in a horizontal posture. In this state, one of the application nozzles 23 is moved above the substrate W by the moving mechanism 24, and the application liquid is discharged from the application nozzle 23. As a result, the coating liquid is applied on the processing surface of the substrate W, and a film of the coating liquid (hereinafter, referred to as a coating film) is formed on the processing surface of the substrate W. Here, the surface to be processed refers to a surface of the substrate W on which various patterns such as a circuit pattern are formed.
　複数の塗布ノズル２３の各々は、当該塗布ノズル２３に固有の種類の塗布液を吐出することが可能である。以下の説明において、複数の塗布ノズル２３を区別する場合は、複数の塗布ノズル２３をそれぞれ塗布ノズル２３ａ，２３ｂ，２３ｃ…と呼ぶ。 各 々 Each of the plurality of application nozzles 23 can discharge a type of application liquid unique to the application nozzle 23. In the following description, when distinguishing a plurality of application nozzles 23, a plurality of application nozzles 23 are called application nozzles 23a, 23b, 23c ... respectively.
　また、いずれかのエッジリンスノズル２５から基板Ｗの周縁部にリンス液が吐出される。基板Ｗの周縁部とは、基板Ｗの被処理面において基板Ｗの外周部に沿った一定幅の領域をいう。これにより、基板Ｗの周縁部に付着する塗布液が除去される。複数のエッジリンスノズル２５の各々は、当該エッジリンスノズル２５に固有の種類の除去液を吐出することが可能である。以下の説明において、複数のエッジリンスノズル２５を区別する場合は、複数のエッジリンスノズル２５をそれぞれエッジリンスノズル２５ａ，２５ｂ，２５ｃ…と呼ぶ。 (4) A rinse liquid is discharged from any of the edge rinse nozzles 25 to the peripheral portion of the substrate W. The peripheral portion of the substrate W refers to a region of a constant width along the outer peripheral portion of the substrate W on the processing surface of the substrate W. Thereby, the coating liquid adhering to the peripheral portion of the substrate W is removed. Each of the plurality of edge rinse nozzles 25 can discharge a type of removal liquid unique to the edge rinse nozzle 25. In the following description, when distinguishing the plurality of edge rinse nozzles 25, the plurality of edge rinse nozzles 25 will be referred to as edge rinse nozzles 25a, 25b, 25c, respectively.
　さらに、ベベルリンスノズル２６から基板Ｗのベベル部にリンス液が吐出される。ベベル部とは、基板Ｗの被処理面の外周部から基板Ｗの最外周部に向かって傾斜する部分および基板Ｗの裏面の外周部から基板Ｗの最外周部に向かって傾斜する部分をいう。裏面とは、基板Ｗの被処理面と反対側の面をいう。これにより、基板Ｗのベベル部に付着する塗布液が除去される。 (4) Further, the rinsing liquid is discharged from the Beberls nozzle 26 to the bevel portion of the substrate W. The bevel portion refers to a portion inclined from the outer peripheral portion of the processing surface of the substrate W toward the outermost peripheral portion of the substrate W and a portion inclined from the outer peripheral portion of the back surface of the substrate W toward the outermost peripheral portion of the substrate W. . The back surface refers to a surface of the substrate W opposite to the surface to be processed. Thereby, the coating liquid adhering to the bevel portion of the substrate W is removed.
　図３は、主として図１の熱処理部１２３を示す基板処理装置１００の模式的側面図である。図３に示すように、熱処理部１２３は、上段熱処理部１０１および下段熱処理部１０２を有する。上段熱処理部１０１および下段熱処理部１０２の各々には、複数の加熱ユニットＰＨＰ、複数の冷却ユニットＣＰおよびエッジ露光部４０が設けられる。加熱ユニットＰＨＰにおいては、基板Ｗの加熱処理が行われる。冷却ユニットＣＰにおいては、基板Ｗの冷却処理が行われる。 FIG. 3 is a schematic side view of the substrate processing apparatus 100 mainly showing the heat treatment section 123 of FIG. As shown in FIG. 3, the heat treatment section 123 includes an upper heat treatment section 101 and a lower heat treatment section 102. Each of the upper heat treatment unit 101 and the lower heat treatment unit 102 includes a plurality of heating units PHP, a plurality of cooling units CP, and an edge exposure unit 40. In the heating unit PHP, the substrate W is subjected to a heat treatment. In the cooling unit CP, the substrate W is cooled.
　エッジ露光部４０は、スピンチャック４１および光源４２を備える。光源４２は、例えば高圧水銀灯を含み、３６５ｎｍのピーク波長を有する光（ｉ線）を露光光として出射する。エッジ露光部４０においては、スピンチャック４１が基板Ｗを水平姿勢で吸着保持して回転する。この状態で、光源４２から基板Ｗの周縁部の一定幅の領域にｉ線が照射される。これにより、基板Ｗ上の周縁部における一定幅の領域に露光処理（エッジ露光処理）が行われる。 The edge exposure unit 40 includes a spin chuck 41 and a light source 42. The light source 42 includes, for example, a high-pressure mercury lamp, and emits light (i-line) having a peak wavelength of 365 nm as exposure light. In the edge exposure unit 40, the spin chuck 41 rotates while sucking and holding the substrate W in a horizontal posture. In this state, the light source 42 irradiates an i-line to a region having a constant width on the peripheral portion of the substrate W. As a result, an exposure process (edge exposure process) is performed on a region of a constant width in the peripheral portion on the substrate W.
　図４は、主として図１の搬送部１２２を示す側面図である。図４に示すように、搬送部１２２は、上段搬送室１２５および下段搬送室１２６を有する。上段搬送室１２５には搬送装置（搬送ロボット）１２７が設けられ、下段搬送室１２６には搬送装置１２８が設けられる。搬送装置１２７，１２８の各々は、基板Ｗを保持しつつその基板Ｗを搬送する。搬送部１１２と上段搬送室１２５との間に、基板載置部Ｐ１，Ｐ２が設けられ、搬送部１１２と下段搬送室１２６との間に、基板載置部Ｐ３，Ｐ４が設けられる。 FIG. 4 is a side view mainly showing the transport unit 122 of FIG. As shown in FIG. 4, the transfer section 122 has an upper transfer chamber 125 and a lower transfer chamber 126. A transfer device (transfer robot) 127 is provided in the upper transfer chamber 125, and a transfer device 128 is provided in the lower transfer chamber 126. Each of the transfer devices 127 and 128 transfers the substrate W while holding the substrate W. Substrate placement sections P1 and P2 are provided between the transfer section 112 and the upper transfer chamber 125, and substrate placement sections P3 and P4 are provided between the transfer section 112 and the lower transfer chamber 126.
　（２）基板処理
　図５～図７は、処理が行われる基板Ｗの部分拡大縦断面図である。図５（ａ）は、例えばシリコンにより形成された未処理の基板Ｗを示す。図５（ａ）の基板Ｗは、図１のインデクサブロック１１から塗布ブロック１２の熱処理部１２３に搬送され、冷却ユニットＣＰにより基板Ｗに冷却処理が行われる。 (2) Substrate Processing FIGS. 5 to 7 are partially enlarged longitudinal sectional views of the substrate W to be processed. FIG. 5A shows an unprocessed substrate W made of, for example, silicon. The substrate W in FIG. 5A is transported from the indexer block 11 in FIG. 1 to the heat treatment section 123 of the coating block 12, and the cooling unit CP performs a cooling process on the substrate W.
　冷却処理の後、基板Ｗは、図１の塗布処理部１２１のいずれかの塗布処理ユニット２０に搬送され、スピンチャック２１により保持および回転される。この状態で、図５（ｂ）に示すように、塗布ノズル２３ａにより塗布液が基板Ｗの被処理面の略中央部に吐出される。これにより、基板Ｗの被処理面に下層膜Ｆ１が塗布膜として形成される。 After the cooling process, the substrate W is transported to any one of the coating units 20 of the coating unit 121 in FIG. 1 and is held and rotated by the spin chuck 21. In this state, as shown in FIG. 5B, the coating liquid is discharged from the coating nozzle 23a to a substantially central portion of the processing surface of the substrate W. Thereby, the lower layer film F1 is formed as a coating film on the surface to be processed of the substrate W.
　また、図５（ｃ）に示すように、エッジリンスノズル２５ａにより基板Ｗの周縁部にリンス液が吐出される。これにより、エッジリンス処理が行われ、基板Ｗの周縁部に付着する塗布液が除去される。図５（ｃ）のリンス液としては、例えば有機溶媒であってもよいし、純水または水溶液であってもよい。エッジリンス処理の後、基板Ｗは、熱処理部１２３に搬送され、図１の加熱ユニットＰＨＰまたは冷却ユニットＣＰにより基板Ｗに所定の熱処理（冷却処理を含む。）が行われる。 {Circle around (5)} As shown in FIG. 5C, the rinse liquid is discharged to the peripheral portion of the substrate W by the edge rinse nozzle 25a. Thereby, the edge rinse process is performed, and the coating liquid adhering to the peripheral portion of the substrate W is removed. The rinsing liquid in FIG. 5C may be, for example, an organic solvent, pure water or an aqueous solution. After the edge rinsing process, the substrate W is transported to the heat treatment unit 123, and a predetermined heat treatment (including a cooling process) is performed on the substrate W by the heating unit PHP or the cooling unit CP in FIG.
　本実施の形態においては、下層膜Ｆ１は、無機性の塗布膜と有機性の塗布膜とが交互に積層された構成を有する。この場合、塗布処理部１２１において基板Ｗに一の塗布膜が形成され、エッジリンス処理が行われるごとに、熱処理部１２３において基板Ｗに熱処理が行われる。図５（ｄ）の例では、下層膜Ｆ１は、塗布膜Ｆａ，Ｆｂ，Ｆｃがこの順で基板Ｗ上に積層された構成を有する。 In the present embodiment, the lower film F1 has a configuration in which inorganic coating films and organic coating films are alternately stacked. In this case, a heat treatment is performed on the substrate W in the heat treatment unit 123 each time one coating film is formed on the substrate W in the coating processing unit 121 and the edge rinsing process is performed. In the example of FIG. 5D, the lower film F1 has a configuration in which coating films Fa, Fb, and Fc are stacked on the substrate W in this order.
　塗布膜Ｆａは、例えばシリコン窒化膜、シリコン酸化膜またはポリシリコン膜であり、本実施の形態における基板処理の終了後、図示しない外部のエッチング装置によりエッチングされる対象となる膜である。塗布膜Ｆｂは、例えばＳＯＣ（Spin On Carbon）膜である。塗布膜Ｆｃは、例えばＳＯＧ（Spin On Glass）膜またはＳｉＡＲＣ（Si-rich Anti Reflective Coating）膜である。塗布膜Ｆｂ，Ｆｃは、塗布膜Ｆａのエッチングのためのマスクとして用いられる。 The coating film Fa is, for example, a silicon nitride film, a silicon oxide film, or a polysilicon film, and is a film to be etched by an external etching device (not shown) after the substrate processing in this embodiment is completed. The coating film Fb is, for example, an SOC (Spin On Carbon) film. The coating film Fc is, for example, an SOG (Spin On Glass) film or a SiARC (Si-rich Anti Reflective Coating) film. The coating films Fb and Fc are used as masks for etching the coating film Fa.
　本実施の形態においては、下層膜Ｆ１は塗布膜Ｆａ～Ｆｃを含むが、本発明はこれに限定されない。塗布膜Ｆｃは塗布膜Ｆａのエッチングレートを増幅させるために用いられる。そのため、十分に大きいエッチングレートで塗布膜Ｆａをエッチングすることが可能な場合には、下層膜Ｆ１は塗布膜Ｆａ，Ｆｂを含み、塗布膜Ｆｃを含まなくてもよい。あるいは、下層膜Ｆ１は、塗布膜Ｆａを含み、塗布膜Ｆｂ，Ｆｃを含まなくてもよい。 In the present embodiment, the lower layer film F1 includes the coating films Fa to Fc, but the present invention is not limited to this. The coating film Fc is used to amplify the etching rate of the coating film Fa. Therefore, when it is possible to etch the coating film Fa at a sufficiently high etching rate, the lower layer film F1 may include the coating films Fa and Fb and not include the coating film Fc. Alternatively, the lower layer film F1 may include the coating film Fa and not include the coating films Fb and Fc.
　その後、基板Ｗは、塗布処理部１２１のいずれかの塗布処理ユニット２０に搬送され、スピンチャック２１により保持および回転される。この状態で、図６（ａ）に示すように、塗布ノズル２３ｂにより感光性のフォトレジスト液が塗布液として基板Ｗの被処理面の略中央部に吐出される。これにより、下層膜Ｆ１を覆うように基板Ｗの被処理面に感光性レジスト膜Ｆ２が塗布膜として形成される。感光性レジスト膜Ｆ２は、例えばｉ線により感光するｉ線レジスト膜である。 Then, the substrate W is transported to any one of the coating units 20 of the coating unit 121, and is held and rotated by the spin chuck 21. In this state, as shown in FIG. 6A, a photosensitive photoresist liquid is discharged as a coating liquid to a substantially central portion of the processing surface of the substrate W by the coating nozzle 23b. Thereby, a photosensitive resist film F2 is formed as a coating film on the surface to be processed of the substrate W so as to cover the lower layer film F1. The photosensitive resist film F2 is, for example, an i-line resist film that is exposed to i-line.
　また、図６（ｂ）に示すように、ベベルリンスノズル２６により基板Ｗのベベル部にリンス液が吐出される。これにより、ベベルリンス処理が行われ、基板Ｗのベベル部に付着するフォトレジスト液が除去される。図６（ｂ）のリンス液は、図５（ｃ）と同じリンス液であってもよい。 (6) Further, as shown in FIG. 6B, the rinsing liquid is discharged to the bevel portion of the substrate W by the Beberless nozzle 26. As a result, the Beberls process is performed, and the photoresist liquid adhering to the bevel portion of the substrate W is removed. The rinsing liquid in FIG. 6B may be the same rinsing liquid as in FIG. 5C.
　ベベルリンス処理の後、基板Ｗは、熱処理部１２３に搬送され、加熱ユニットＰＨＰまたは冷却ユニットＣＰにより基板Ｗに所定の熱処理が行われる。熱処理後、基板Ｗは、図３のエッジ露光部４０において、スピンチャック４１により保持および回転される。この状態で、図６（ｃ）に示すように、光源４２から基板Ｗの周縁部の一定幅の領域に露光光が照射される。これにより、基板Ｗ上の周縁部における感光性レジスト膜Ｆ２の一定幅の領域にエッジ露光処理が行われる。エッジ露光処理の後、冷却ユニットＣＰにより基板Ｗに冷却処理が行われる。 After the Beberls process, the substrate W is transported to the heat treatment unit 123, and the heating unit PHP or the cooling unit CP performs a predetermined heat treatment on the substrate W. After the heat treatment, the substrate W is held and rotated by the spin chuck 41 in the edge exposure unit 40 in FIG. In this state, as shown in FIG. 6C, the exposure light is emitted from the light source 42 to a region of a constant width on the peripheral portion of the substrate W. Thus, an edge exposure process is performed on a region having a constant width of the photosensitive resist film F2 at a peripheral portion on the substrate W. After the edge exposure processing, the cooling processing is performed on the substrate W by the cooling unit CP.
　なお、本実施の形態においては、感光性レジスト膜Ｆ２はｉ線レジスト膜であるが、本発明はこれに限定されない。感光性レジスト膜Ｆ２は、他の感光性レジスト膜であってもよい。例えば、感光性レジスト膜Ｆ２は、２４８ｎｍのピーク波長を有する光により感光するＫｒＦ（フッ化クリプトン）レジスト膜であってもよい。この場合、光源４２は、ＫｒＦエキシマレーザを含む。あるいは、感光性レジスト膜Ｆ２は、１９３ｎｍのピーク波長を有する光により感光するＡｒＦ（フッ化アルゴン）レジスト膜であってもよい。この場合、光源４２は、ＡｒＦエキシマレーザを含む。 In the present embodiment, the photosensitive resist film F2 is an i-line resist film, but the present invention is not limited to this. The photosensitive resist film F2 may be another photosensitive resist film. For example, the photosensitive resist film F2 may be a KrF (krypton fluoride) resist film that is exposed to light having a peak wavelength of 248 nm. In this case, the light source 42 includes a KrF excimer laser. Alternatively, the photosensitive resist film F2 may be an ArF (argon fluoride) resist film that is exposed to light having a peak wavelength of 193 nm. In this case, the light source 42 includes an ArF excimer laser.
　その後、基板Ｗは、塗布処理部１２１のいずれかの塗布処理ユニット２０に搬送され、スピンチャック２１により保持および回転される。この状態で、図７（ａ）に示すように、ＥＵＶ（Extreme Ultra Violet；超紫外線）を効率よく吸収するための金属成分または金属酸化物等の金属成分が組成物として含有された金属含有レジスト液が塗布液として塗布ノズル２３ｃにより基板Ｗの被処理面の略中央部に吐出される。ＥＵＶの波長は、１３ｎｍ以上１４ｎｍ以下である。金属成分は、例えばＳｎ（スズ）、ＨｆＯ２（酸化ハフニウム）またはＺｒＯ２（二酸化ジルコニウム）を含む。これにより、感光性レジスト膜Ｆ２を覆うように基板Ｗの被処理面に金属含有レジスト膜Ｆ４が塗布膜として形成される。 Thereafter, the substrate W is transported to any one of the coating processing units 20 of the coating processing unit 121, and is held and rotated by the spin chuck 21. In this state, as shown in FIG. 7A, a metal-containing resist containing a metal component such as a metal component or a metal oxide for efficiently absorbing EUV (Extreme Ultra Violet) as a composition. The liquid is discharged as a coating liquid from the coating nozzle 23c to a substantially central portion of the processing surface of the substrate W. The wavelength of EUV is 13 nm or more and 14 nm or less. The metal component includes, for example, Sn (tin), HfO 2 (hafnium oxide) or ZrO 2 (zirconium dioxide). Thus, the metal-containing resist film F4 is formed as a coating film on the surface to be processed of the substrate W so as to cover the photosensitive resist film F2.
　また、図７（ｂ）に示すように、エッジリンスノズル２５ｂにより基板Ｗの周縁部にリンス液が吐出される。図７（ｂ）のリンス液としては、金属含有レジスト膜Ｆ４を溶かしかつ感光性レジスト膜Ｆ２を溶かさない液が用いられる。具体的には、リンス液として、例えばＭＩＢＣ（methyl isobutyl carbinol：メチルイソブチルカルビノール）またはＭＩＢＫ（methyl isobutyl ketone：メチルイソブチルケトン）等の溶解性が低い有機溶媒が用いられる。これにより、エッジリンス処理が行われ、基板Ｗの周縁部に付着する金属含有レジスト液が除去される。 {Circle around (2)} As shown in FIG. 7 (b), the edge rinse nozzle 25b discharges the rinse liquid to the periphery of the substrate W. As the rinsing liquid in FIG. 7B, a liquid that dissolves the metal-containing resist film F4 but does not dissolve the photosensitive resist film F2 is used. Specifically, an organic solvent having low solubility such as MIBC (methyl isobutyl carbinol) or MIBK (methyl isobutyl ketone) is used as the rinsing liquid. As a result, the edge rinse process is performed, and the metal-containing resist liquid adhering to the peripheral portion of the substrate W is removed.
　さらに、図７（ｃ）に示すように、エッジリンスノズル２５ｃにより基板Ｗの周縁部にリンス液が吐出される。図７（ｃ）のリンス液としては、感光性レジスト膜Ｆ２を溶かしかつ金属含有レジスト膜Ｆ４を溶かさない液が用いられる。具体的には、リンス液として、例えばＴＭＡＨ（tetra methyl ammonium hydroxide：水酸化テトラメチルアンモニウム）またはＫＯＨ（potassium hydroxide：水酸化カリウム）を含むアルカリ性水溶液等の現像液が用いられる。これにより、エッジリンス処理が行われ、基板Ｗの周縁部に残存する感光性レジスト膜Ｆ２がポジティブトーン現像により除去される。 (7) Further, as shown in FIG. 7 (c), the rinse liquid is discharged to the peripheral edge of the substrate W by the edge rinse nozzle 25c. As the rinsing liquid in FIG. 7C, a liquid that dissolves the photosensitive resist film F2 but does not dissolve the metal-containing resist film F4 is used. Specifically, a developer such as an alkaline aqueous solution containing TMAH (tetramethylammonium hydroxide: tetramethylammonium hydroxide) or KOH (potassium hydroxide: potassium hydroxide) is used as the rinsing liquid. As a result, an edge rinse process is performed, and the photosensitive resist film F2 remaining on the peripheral portion of the substrate W is removed by positive tone development.
　上記の２段階のエッジリンス処理の後、基板Ｗは、熱処理部１２３に搬送され、加熱ユニットＰＨＰまたは冷却ユニットＣＰにより基板Ｗに所定の熱処理が行われる。その後、基板Ｗは、塗布ブロック１２からインデクサブロック１１に搬送され、基板処理が終了する。 (4) After the two-stage edge rinsing process, the substrate W is transported to the heat treatment unit 123, and the heating unit PHP or the cooling unit CP performs a predetermined heat treatment on the substrate W. Thereafter, the substrate W is transported from the coating block 12 to the indexer block 11, and the substrate processing ends.
　（３）基板処理装置の動作
　図１～図７を参照しながら基板処理装置１００の動作を説明する。なお、以下の説明では、図２の塗布処理部１２１に積層された複数の塗布処理ユニット２０のうち、上部に配置された半数の塗布処理ユニット２０を上段の塗布処理ユニット２０と呼ぶ。一方、下部に配置された残り半数の塗布処理ユニット２０を下段の塗布処理ユニット２０と呼ぶ。 (3) Operation of Substrate Processing Apparatus The operation of the substrate processing apparatus 100 will be described with reference to FIGS. In the following description, of the plurality of coating processing units 20 stacked in the coating processing unit 121 in FIG. 2, half of the coating processing units 20 arranged at the upper part are referred to as upper coating processing units 20. On the other hand, the remaining half of the coating processing units 20 arranged at the lower part are referred to as lower coating processing units 20.
　インデクサブロック１１のキャリア載置部１１１（図１）に、未処理の基板Ｗが収容されたキャリア１１３が載置される。搬送装置１１５は、キャリア１１３から基板載置部Ｐ１，Ｐ３（図４）に未処理の基板Ｗを搬送する。また、搬送装置１１５は、基板載置部Ｐ２，Ｐ４（図４）に載置された処理済の基板Ｗをキャリア１１３に搬送する。 (4) The carrier 113 containing the unprocessed substrate W is placed on the carrier placement section 111 (FIG. 1) of the indexer block 11. The transfer device 115 transfers the unprocessed substrate W from the carrier 113 to the substrate platforms P1 and P3 (FIG. 4). In addition, the transport device 115 transports the processed substrate W placed on the substrate platforms P2 and P4 (FIG. 4) to the carrier 113.
　塗布ブロック１２において、搬送装置１２７は、基板載置部Ｐ１に載置された基板Ｗを上段熱処理部１０１（図３）の冷却ユニットＣＰおよび塗布処理部１２１（図２）の上段のいずれかの塗布処理ユニット２０に順に搬送する。この場合、冷却ユニットＣＰにおいて、下層膜Ｆ１の形成に適した温度に基板Ｗが冷却される。また、塗布処理ユニット２０において、図５（ｂ）に示すように基板Ｗ上に下層膜Ｆ１が形成され、図５（ｃ）に示すように基板Ｗにエッジリンス処理が行われる。 In the coating block 12, the transfer device 127 transfers the substrate W mounted on the substrate mounting part P1 to one of the cooling unit CP of the upper heat treatment unit 101 (FIG. 3) and the upper part of the coating processing unit 121 (FIG. 2). It is transported to the coating processing unit 20 in order. In this case, in the cooling unit CP, the substrate W is cooled to a temperature suitable for forming the lower film F1. In addition, in the coating processing unit 20, the lower layer film F1 is formed on the substrate W as shown in FIG. 5B, and the edge rinse processing is performed on the substrate W as shown in FIG. 5C.
　次に、搬送装置１２７は、塗布処理ユニット２０により下層膜Ｆ１が形成された基板Ｗを上段熱処理部１０１の加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。この場合、加熱ユニットＰＨＰにおいて、基板Ｗが１５０℃～４００℃に加熱された後、冷却ユニットＣＰにおいて冷却される。図５（ｄ）に示すように下層膜Ｆ１が複数の塗布膜Ｆａ～Ｆｃを含む場合には、搬送装置１２７は、塗布処理ユニット２０と、加熱ユニットＰＨＰおよび冷却ユニットＣＰとの間で上記の基板Ｗの搬送を繰り返す。 Next, the transport device 127 transports the substrate W on which the lower layer film F1 is formed by the coating processing unit 20 to the heating unit PHP and the cooling unit CP of the upper heat treatment unit 101 in order. In this case, after the substrate W is heated to 150 ° C. to 400 ° C. in the heating unit PHP, it is cooled in the cooling unit CP. When the lower layer film F1 includes a plurality of coating films Fa to Fc as shown in FIG. 5D, the transfer device 127 moves the coating unit 20 and the heating unit PHP and the cooling unit CP. The transfer of the substrate W is repeated.
　その後、搬送装置１２７は、基板Ｗを塗布処理部１２１の上段のいずれかの塗布処理ユニット２０、上段熱処理部１０１の加熱ユニットＰＨＰ、冷却ユニットＣＰ、エッジ露光部４０および冷却ユニットＣＰに順に搬送する。この場合、塗布処理ユニット２０において、図６（ａ）に示すように基板Ｗ上に感光性レジスト膜Ｆ２が形成され、図６（ｂ）に示すように基板Ｗにベベルリンス処理が行われる。また、加熱ユニットＰＨＰにおいて、基板Ｗが９０℃～１３０℃に加熱された後、冷却ユニットＣＰにおいて冷却される。次に、エッジ露光部４０において、図６（ｃ）に示すように基板Ｗにエッジ露光処理が行われ、冷却ユニットＣＰにおいて基板Ｗが冷却される。 Thereafter, the transport device 127 transports the substrate W to any one of the upper coating processing units 20 of the coating processing unit 121, the heating unit PHP of the upper thermal processing unit 101, the cooling unit CP, the edge exposure unit 40, and the cooling unit CP. . In this case, in the coating processing unit 20, a photosensitive resist film F2 is formed on the substrate W as shown in FIG. 6A, and the substrate W is subjected to Vebberrus processing as shown in FIG. 6B. Further, in the heating unit PHP, after the substrate W is heated to 90 ° C. to 130 ° C., it is cooled in the cooling unit CP. Next, in the edge exposure section 40, the edge exposure processing is performed on the substrate W as shown in FIG. 6C, and the substrate W is cooled in the cooling unit CP.
　その後、搬送装置１２７は、基板Ｗを塗布処理部１２１の上段のいずれかの塗布処理ユニット２０、上段熱処理部１０１の加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。この場合、塗布処理ユニット２０において、図７（ａ）に示すように基板Ｗ上に金属含有レジスト膜Ｆ４が形成された後、図７（ｂ）および図７（ｃ）に示すように基板Ｗに２段階のエッジリンス処理が行われる。また、加熱ユニットＰＨＰにおいて、基板Ｗが９０℃～２００℃に加熱された後、冷却ユニットＣＰにおいて冷却される。最後に、搬送装置１２７は、冷却後の基板Ｗを基板載置部Ｐ２に搬送する。 Then, the transport device 127 transports the substrate W to one of the upper coating processing units 20 of the coating processing unit 121, the heating unit PHP and the cooling unit CP of the upper thermal processing unit 101 in this order. In this case, in the coating processing unit 20, after the metal-containing resist film F4 is formed on the substrate W as shown in FIG. 7A, the substrate W is formed as shown in FIGS. 7B and 7C. , A two-stage edge rinse process is performed. Further, in the heating unit PHP, the substrate W is heated to 90 ° C. to 200 ° C., and then cooled in the cooling unit CP. Finally, the transport device 127 transports the cooled substrate W to the substrate platform P2.
　搬送装置１２８は、基板載置部Ｐ３に載置された基板Ｗを下段熱処理部１０２（図３）の冷却ユニットＣＰおよび塗布処理部１２１（図２）の下段のいずれかの塗布処理ユニット２０に順に搬送する。次に、搬送装置１２８は、基板Ｗを下段熱処理部１０２の加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。下層膜Ｆ１が複数の塗布膜を含む場合には、搬送装置１２８は、塗布処理ユニット２０と、加熱ユニットＰＨＰおよび冷却ユニットＣＰとの間で上記の基板Ｗの搬送を繰り返す。 The transfer device 128 transfers the substrate W mounted on the substrate mounting portion P3 to the cooling unit CP of the lower heat treatment unit 102 (FIG. 3) and any one of the lower coating processing units 20 of the coating processing unit 121 (FIG. 2). Convey in order. Next, the transfer device 128 transfers the substrate W to the heating unit PHP and the cooling unit CP of the lower heat treatment unit 102 in order. When the lower film F1 includes a plurality of coating films, the transfer device 128 repeats the transfer of the substrate W between the coating processing unit 20 and the heating unit PHP and the cooling unit CP.
　続いて、搬送装置１２８は、基板Ｗを塗布処理部１２１の下段のいずれかの塗布処理ユニット２０、下段熱処理部１０２のエッジ露光部４０、加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。その後、搬送装置１２８は、基板Ｗを塗布処理部１２１の下段のいずれかの塗布処理ユニット２０、下段熱処理部１０２の加熱ユニットＰＨＰ、冷却ユニットＣＰおよび基板載置部Ｐ２に順に搬送する。下段の塗布処理ユニット２０および下段熱処理部１０２における基板Ｗの処理内容は、上段の塗布処理ユニット２０および上段熱処理部１０１における基板Ｗの処理内容とそれぞれ同様である。 Subsequently, the transport device 128 transports the substrate W to any one of the lower coating processing units 20 of the coating processing unit 121, the edge exposure unit 40 of the lower thermal processing unit 102, the heating unit PHP, and the cooling unit CP. Thereafter, the transport device 128 transports the substrate W to any one of the lower coating processing units 20 of the coating processing unit 121, the heating unit PHP of the lower thermal processing unit 102, the cooling unit CP, and the substrate mounting unit P2. The processing content of the substrate W in the lower coating processing unit 20 and the lower thermal processing unit 102 is the same as the processing content of the substrate W in the upper coating processing unit 20 and the upper thermal processing unit 101, respectively.
　（４）効果
　本実施の形態に係る基板処理装置１００においては、感光性レジスト膜Ｆ２は、基板Ｗの周縁部のみでなく下層膜Ｆ１を覆うように基板Ｗの被処理面の全面に形成される。したがって、金属含有レジスト膜Ｆ４は、基板Ｗの周縁部近傍で盛り上がることなく感光性レジスト膜Ｆ２上に均一な厚みで形成される。また、金属含有レジスト膜Ｆ４の外周部が除去された際に、感光性レジスト膜Ｆ２の外周部に金属含有レジスト膜Ｆ４の金属成分が残存した場合でも、当該金属成分が感光性レジスト膜Ｆ２の外周部ごと除去される。 (4) Effect In the substrate processing apparatus 100 according to the present embodiment, the photosensitive resist film F2 is formed on the entire processing surface of the substrate W so as to cover not only the peripheral portion of the substrate W but also the lower layer film F1. You. Therefore, the metal-containing resist film F4 is formed with a uniform thickness on the photosensitive resist film F2 without being raised near the periphery of the substrate W. Further, even when the metal component of the metal-containing resist film F4 remains on the outer peripheral portion of the photosensitive resist film F2 when the outer peripheral portion of the metal-containing resist film F4 is removed, the metal component of the photosensitive resist film F2 does The entire outer peripheral portion is removed.
　そのため、搬送装置１１５，１２７，１２８が基板Ｗの周縁部を保持した場合でも、搬送装置１１５，１２７，１２８に金属成分が付着しない。これにより、金属汚染の発生を防止しつつ基板Ｗ上に均一な膜厚を有する金属含有レジスト膜Ｆ４を形成することができる。その結果、基板Ｗの周縁部近傍の金属含有レジスト膜Ｆ４の領域を有効に利用することができ、歩留まりが低下することを防止することができる。 Therefore, even when the transfer devices 115, 127, and 128 hold the peripheral portion of the substrate W, the metal component does not adhere to the transfer devices 115, 127, and 128. This makes it possible to form the metal-containing resist film F4 having a uniform thickness on the substrate W while preventing the occurrence of metal contamination. As a result, the region of the metal-containing resist film F4 near the periphery of the substrate W can be effectively used, and a decrease in yield can be prevented.
　［２］第２の実施の形態
　（１）基板処理装置
　第２の実施の形態に係る基板処理装置について、第１の実施の形態に係る基板処理装置１００と異なる点を説明する。図８は、本発明の第２の実施の形態に係る基板処理装置の模式的平面図である。図８に示すように、基板処理装置１００は、インデクサブロック１１および塗布ブロック１２に加えて、現像ブロック１３、洗浄乾燥処理ブロック１４Ａおよび搬入搬出ブロック１４Ｂをさらに備える。洗浄乾燥処理ブロック１４Ａおよび搬入搬出ブロック１４Ｂにより、インターフェイスブロック１４が構成される。ＥＵＶにより基板Ｗに露光処理を行う露光装置１５が搬入搬出ブロック１４Ｂに隣接するように配置される。 [2] Second Embodiment (1) Substrate Processing Apparatus A substrate processing apparatus according to a second embodiment will be described with respect to differences from the substrate processing apparatus 100 according to the first embodiment. FIG. 8 is a schematic plan view of the substrate processing apparatus according to the second embodiment of the present invention. As shown in FIG. 8, the substrate processing apparatus 100 further includes a developing block 13, a cleaning / drying processing block 14A, and a loading / unloading block 14B in addition to the indexer block 11 and the coating block 12. The interface block 14 is constituted by the cleaning / drying processing block 14A and the loading / unloading block 14B. An exposure device 15 that performs an exposure process on the substrate W by EUV is disposed adjacent to the loading / unloading block 14B.
　現像ブロック１３は、現像処理部１３１、搬送部１３２および熱処理部１３３を含む。現像処理部１３１および熱処理部１３３は、搬送部１３２を挟んで対向するように設けられる。洗浄乾燥処理ブロック１４Ａは、洗浄乾燥処理部１６１，１６２および搬送部１６３を含む。洗浄乾燥処理部１６１，１６２は、搬送部１６３を挟んで対向するように設けられる。搬送部１６３には、搬送装置１４１，１４２が設けられる。搬入搬出ブロック１４Ｂには、搬送装置１４３が設けられる。搬送装置１４３は、露光装置１５に対する基板Ｗの搬入および搬出を行う。 The development block 13 includes a development processing section 131, a transport section 132, and a heat treatment section 133. The development processing unit 131 and the heat treatment unit 133 are provided to face each other with the transport unit 132 interposed therebetween. The cleaning / drying processing block 14A includes cleaning / drying processing units 161 and 162 and a transport unit 163. The cleaning / drying processing units 161 and 162 are provided to face each other with the transport unit 163 interposed therebetween. The transport unit 163 is provided with transport devices 141 and 142. A transfer device 143 is provided in the carry-in / carry-out block 14B. The transfer device 143 loads and unloads the substrate W from the exposure device 15.
　図９は、主として図８の塗布処理部１２１、現像処理部１３１および洗浄乾燥処理部１６１を示す基板処理装置１００の模式的側面図である。図９に示すように、現像処理部１３１には、複数の現像処理ユニット（スピンデベロッパ）３０が設けられる。各現像処理ユニット３０は、塗布処理ユニット２０と同様に、複数のスピンチャック３１および複数のカップ３２を備える。また、各現像処理ユニット３０は、現像液を吐出する複数の現像ノズル３３、各現像ノズル３３を一方向に移動させる移動機構３４およびエッジリンスノズル３５を備える。 FIG. 9 is a schematic side view of the substrate processing apparatus 100 mainly showing the coating processing section 121, the development processing section 131, and the cleaning / drying processing section 161 of FIG. As shown in FIG. 9, a plurality of development processing units (spin developers) 30 are provided in the development processing unit 131. Each development processing unit 30 includes a plurality of spin chucks 31 and a plurality of cups 32, similarly to the coating processing unit 20. Each developing unit 30 includes a plurality of developing nozzles 33 for discharging the developing solution, a moving mechanism 34 for moving each developing nozzle 33 in one direction, and an edge rinse nozzle 35.
　現像処理ユニット３０においては、スピンチャック３１が、基板Ｗを水平姿勢で吸着保持して回転する。この状態で、移動機構３４により各現像ノズル３３が一方向に移動しつつ各基板Ｗに現像液を供給する。これにより、基板Ｗの現像処理が行われる。また、エッジリンスノズル３５から現像処理後の基板Ｗの周縁部にリンス液が吐出される。 In the developing unit 30, the spin chuck 31 rotates while sucking and holding the substrate W in a horizontal posture. In this state, the developing solution is supplied to each substrate W while each developing nozzle 33 is moved in one direction by the moving mechanism 34. Thus, the development processing of the substrate W is performed. Further, a rinse liquid is discharged from the edge rinse nozzle 35 to a peripheral portion of the substrate W after the development processing.
　洗浄乾燥処理部１６１には、複数の洗浄乾燥処理ユニットＳＤ１が設けられる。洗浄乾燥処理ユニットＳＤ１においては、露光処理前の基板Ｗの洗浄および乾燥処理が行われる。 (4) The cleaning / drying processing unit 161 is provided with a plurality of cleaning / drying processing units SD1. In the cleaning / drying processing unit SD1, the cleaning and drying processing of the substrate W before the exposure processing is performed.
　図１０は、主として図８の熱処理部１２３，１３３および洗浄乾燥処理部１６２を示す基板処理装置１００の模式的側面図である。図１０に示すように、本実施の形態においては、熱処理部１２３の上段熱処理部１０１および下段熱処理部１０２の各々には、２つのエッジ露光部４０が設けられる。以下の説明では、一方のエッジ露光部４０をエッジ露光部４０ａと呼び、他方のエッジ露光部４０をエッジ露光部４０ｂと呼ぶ。 FIG. 10 is a schematic side view of the substrate processing apparatus 100 mainly showing the heat treatment units 123 and 133 and the cleaning / drying processing unit 162 of FIG. As shown in FIG. 10, in the present embodiment, two edge exposure units 40 are provided in each of upper heat treatment unit 101 and lower heat treatment unit 102 of heat treatment unit 123. In the following description, one edge exposure unit 40 is called an edge exposure unit 40a, and the other edge exposure unit 40 is called an edge exposure unit 40b.
　エッジ露光部４０ａとエッジ露光部４０ｂとは、光源４２が異なる点を除き、同一の構成を有する。本実施の形態においては、エッジ露光部４０ａの光源４２は、例えば高圧水銀灯を含み、３６５ｎｍのピーク波長を有する光（ｉ線）を露光光として出射する。エッジ露光部４０ｂの光源４２は、例えばＫｒＦエキシマレーザを含み、２４８ｎｍのピーク波長を有する光を露光光として出射する。 The edge exposure unit 40a and the edge exposure unit 40b have the same configuration except that the light source 42 is different. In the present embodiment, the light source 42 of the edge exposure unit 40a includes a high-pressure mercury lamp, for example, and emits light (i-line) having a peak wavelength of 365 nm as exposure light. The light source 42 of the edge exposure unit 40b includes, for example, a KrF excimer laser and emits light having a peak wavelength of 248 nm as exposure light.
　熱処理部１３３は、上段熱処理部１０３および下段熱処理部１０４を有する。上段熱処理部１０３および下段熱処理部１０４には、複数の加熱ユニットＰＨＰおよび冷却ユニットＣＰが設けられる。上段熱処理部１０３および下段熱処理部１０４において、洗浄乾燥処理ブロック１４Ａに隣り合うように設けられる加熱ユニットＰＨＰは、洗浄乾燥処理ブロック１４Ａからの基板Ｗの搬入が可能に構成される。 The heat treatment section 133 has an upper heat treatment section 103 and a lower heat treatment section 104. The upper heat treatment unit 103 and the lower heat treatment unit 104 are provided with a plurality of heating units PHP and cooling units CP. In the upper heat treatment unit 103 and the lower heat treatment unit 104, the heating unit PHP provided adjacent to the cleaning / drying processing block 14A is configured to be able to carry in the substrate W from the cleaning / drying processing block 14A.
　洗浄乾燥処理部１６２には、複数の洗浄乾燥処理ユニットＳＤ２が設けられる。洗浄乾燥処理ユニットＳＤ２においては、露光処理前の基板Ｗの洗浄および乾燥処理が行われる。 (4) The cleaning / drying processing unit 162 is provided with a plurality of cleaning / drying processing units SD2. In the cleaning / drying processing unit SD2, the cleaning and drying processing of the substrate W before the exposure processing is performed.
　図１１は、主として図８の搬送部１２２，１３２，１６３を示す側面図である。図１１に示すように、搬送部１３２は、上段搬送室１３５および下段搬送室１３６を有する。また、上段搬送室１３５には搬送装置１３７が設けられ、下段搬送室１３６には搬送装置１３８が設けられる。搬送装置１３７，１３８の各々は、基板Ｗを保持しつつその基板Ｗを搬送する。 FIG. 11 is a side view mainly showing the transport units 122, 132, and 163 of FIG. As shown in FIG. 11, the transport section 132 has an upper transport chamber 135 and a lower transport chamber 136. A transfer device 137 is provided in the upper transfer chamber 135, and a transfer device 138 is provided in the lower transfer chamber 136. Each of the transfer devices 137 and 138 transfers the substrate W while holding the substrate W.
　上段搬送室１２５と上段搬送室１３５との間に、基板載置部Ｐ５，Ｐ６が設けられ、下段搬送室１２６と下段搬送室１３６との間に、基板載置部Ｐ７，Ｐ８が設けられる。上段搬送室１３５と搬送部１６３との間に、載置兼バッファ部ＰＢ１が設けられ、下段搬送室１３６と搬送部１６３との間には載置兼バッファ部ＰＢ２が設けられる。搬送部１６３において搬入搬出ブロック１４Ｂと隣接するように、基板載置部Ｐ９および複数の載置兼冷却部ＰＣＰが設けられる。 (4) Substrate placement sections P5 and P6 are provided between the upper transfer chamber 125 and the upper transfer chamber 135, and substrate placement sections P7 and P8 are provided between the lower transfer chamber 126 and the lower transfer chamber 136. A placement and buffer unit PB1 is provided between the upper transfer chamber 135 and the transfer unit 163, and a placement and buffer unit PB2 is provided between the lower transfer chamber 136 and the transfer unit 163. In the transport section 163, a substrate mounting section P9 and a plurality of mounting and cooling sections PCP are provided adjacent to the loading / unloading block 14B.
　（２）基板処理
　図１２～図１４は、第２の実施の形態における処理が行われる基板Ｗの部分拡大縦断面図である。本実施の形態においては、基板Ｗに第１の実施の形態における図５（ａ）～図６（ｂ）の処理と同様の処理が行われる。なお、本実施の形態においては、図６（ａ）の処理で、感光性の第１のフォトレジスト液が塗布液として用いられる。これにより、基板Ｗの被処理面に感光性レジスト膜Ｆ２が形成される。感光性レジスト膜Ｆ２は、例えば２４８ｎｍのピーク波長を有する光により感光するＫｒＦレジスト膜である。 (2) Substrate Processing FIGS. 12 to 14 are partially enlarged longitudinal sectional views of a substrate W on which processing according to the second embodiment is performed. In the present embodiment, the same processing as the processing in FIGS. 5A to 6B in the first embodiment is performed on the substrate W. In the present embodiment, a photosensitive first photoresist liquid is used as a coating liquid in the processing of FIG. Thereby, a photosensitive resist film F2 is formed on the surface to be processed of the substrate W. The photosensitive resist film F2 is a KrF resist film that is exposed to light having a peak wavelength of, for example, 248 nm.
　また、図６（ｂ）の処理の後、基板Ｗは、塗布処理部１２１のいずれかの塗布処理ユニット２０に搬送され、スピンチャック２１により保持および回転される。この状態で、図１２（ａ）に示すように、塗布ノズル２３ｄにより感光性の第２のフォトレジスト液が塗布液として基板Ｗの被処理面の略中央部に吐出される。これにより、感光性レジスト膜Ｆ２を覆うように基板Ｗの被処理面に感光性レジスト膜Ｆ３が塗布膜として形成される。感光性レジスト膜Ｆ３は、例えば３６５ｎｍのピーク波長を有する光により感光するｉ線レジスト膜である。 6) After the processing in FIG. 6B, the substrate W is transported to any one of the coating processing units 20 of the coating processing unit 121, and is held and rotated by the spin chuck 21. In this state, as shown in FIG. 12A, a photosensitive second photoresist liquid is discharged as a coating liquid to a substantially central portion of the processing surface of the substrate W by the coating nozzle 23d. As a result, the photosensitive resist film F3 is formed as a coating film on the processing surface of the substrate W so as to cover the photosensitive resist film F2. The photosensitive resist film F3 is an i-ray resist film that is exposed to light having a peak wavelength of, for example, 365 nm.
　本実施の形態においては、感光性レジスト膜Ｆ２はＫｒＦレジスト膜であり、感光性レジスト膜Ｆ３はｉ線レジスト膜であるが、本発明はこれに限定されない。感光性レジスト膜Ｆ２，Ｆ３は、他のレジスト膜であってもよく、互いに異なる感光波長分布を有すればよい。したがって、感光性レジスト膜Ｆ２は、例えばｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうちいずれかのレジスト膜であり、感光性レジスト膜Ｆ３は、他のレジスト膜であってもよい。 In the present embodiment, the photosensitive resist film F2 is a KrF resist film and the photosensitive resist film F3 is an i-line resist film, but the present invention is not limited to this. The photosensitive resist films F2 and F3 may be other resist films as long as they have different photosensitive wavelength distributions. Therefore, the photosensitive resist film F2 is, for example, any one of an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film, and the photosensitive resist film F3 is another resist film. Is also good.
　また、図１２（ｂ）に示すように、ベベルリンスノズル２６により基板Ｗのベベル部にリンス液が吐出される。これにより、ベベルリンス処理が行われ、基板Ｗのベベル部に付着する第２のフォトレジスト液が除去される。図１２（ｂ）のリンス液は、図６（ｂ）と同じリンス液であってもよい。ベベルリンス処理の後、加熱ユニットＰＨＰまたは冷却ユニットＣＰにより基板Ｗに所定の熱処理が行われる。 {Circle around (2)} As shown in FIG. 12B, the rinsing liquid is discharged to the bevel portion of the substrate W by the Beberls nozzle 26. As a result, the Beberls process is performed, and the second photoresist liquid adhering to the bevel portion of the substrate W is removed. The rinsing liquid in FIG. 12B may be the same rinsing liquid as in FIG. 6B. After the Beberls process, a predetermined heat treatment is performed on the substrate W by the heating unit PHP or the cooling unit CP.
　ベベルリンス処理の後、基板Ｗは、図８の熱処理部１２３に搬送され、加熱ユニットＰＨＰまたは冷却ユニットＣＰにより基板Ｗに所定の熱処理が行われる。熱処理後、基板Ｗは、図１０のエッジ露光部４０ａにおいて、スピンチャック４１により保持および回転される。この状態で、図１２（ｃ）に示すように、光源４２から基板Ｗの周縁部の一定幅の領域に露光光が照射される。これにより、基板Ｗ上の周縁部における感光性レジスト膜Ｆ３の一定幅の領域にエッジ露光処理が行われる。エッジ露光処理の後、冷却ユニットＣＰにより基板Ｗに冷却処理が行われる。 After the Beberls process, the substrate W is transported to the heat treatment unit 123 in FIG. 8, and a predetermined heat treatment is performed on the substrate W by the heating unit PHP or the cooling unit CP. After the heat treatment, the substrate W is held and rotated by the spin chuck 41 in the edge exposure section 40a in FIG. In this state, as shown in FIG. 12C, exposure light is emitted from the light source 42 to a region of a constant width on the peripheral portion of the substrate W. Thus, an edge exposure process is performed on a region of a fixed width of the photosensitive resist film F3 at a peripheral portion on the substrate W. After the edge exposure processing, the cooling processing is performed on the substrate W by the cooling unit CP.
　その後、基板Ｗは、塗布処理部１２１のいずれかの塗布処理ユニット２０に搬送され、スピンチャック２１により保持および回転される。この状態で、図１３（ａ）に示すように、金属含有レジスト液が塗布液として塗布ノズル２３ｃにより基板Ｗの被処理面の略中央部に吐出される。これにより、感光性レジスト膜Ｆ３を覆うように基板Ｗの被処理面に金属含有レジスト膜Ｆ４が塗布膜として形成される。 Then, the substrate W is transported to any one of the coating units 20 of the coating unit 121, and is held and rotated by the spin chuck 21. In this state, as shown in FIG. 13A, a metal-containing resist liquid is discharged as a coating liquid by a coating nozzle 23c to a substantially central portion of a processing surface of the substrate W. Thereby, the metal-containing resist film F4 is formed as a coating film on the surface to be processed of the substrate W so as to cover the photosensitive resist film F3.
　また、図１３（ｂ）に示すように、エッジリンスノズル２５ｂにより基板Ｗの周縁部にリンス液が吐出される。図１３（ｂ）のリンス液としては、金属含有レジスト膜Ｆ４を溶かしかつ感光性レジスト膜Ｆ２，Ｆ３を溶かさない液が用いられる。具体的には、リンス液として、例えばＭＩＢＣまたはＭＩＢＫ等の溶解性が低い有機溶媒が用いられる。これにより、エッジリンス処理が行われ、基板Ｗの周縁部に付着する金属含有レジスト液が除去される。 {Circle around (2)} As shown in FIG. 13 (b), the rinse liquid is discharged to the peripheral edge of the substrate W by the edge rinse nozzle 25b. As the rinsing liquid in FIG. 13B, a liquid that dissolves the metal-containing resist film F4 and does not dissolve the photosensitive resist films F2 and F3 is used. Specifically, an organic solvent having low solubility such as MIBC or MIBK is used as the rinsing liquid. As a result, the edge rinse process is performed, and the metal-containing resist liquid adhering to the peripheral portion of the substrate W is removed.
　さらに、図１３（ｃ）に示すように、エッジリンスノズル２５ｃにより基板Ｗの周縁部にリンス液が吐出される。図１３（ｃ）のリンス液としては、感光性レジスト膜Ｆ３を溶かしかつ金属含有レジスト膜Ｆ４を溶かさない液が用いられる。具体的には、リンス液として、例えばＴＭＡＨまたはＫＯＨを含むアルカリ性水溶液等の現像液が用いられる。これにより、エッジリンス処理が行われ、基板Ｗの周縁部に残存する感光性レジスト膜Ｆ３がポジティブトーン現像により除去される。 (13) Further, as shown in FIG. 13 (c), the rinsing liquid is discharged to the peripheral portion of the substrate W by the edge rinsing nozzle 25c. As the rinsing liquid in FIG. 13C, a liquid that dissolves the photosensitive resist film F3 but does not dissolve the metal-containing resist film F4 is used. Specifically, a developing solution such as an alkaline aqueous solution containing TMAH or KOH is used as the rinsing solution. Thus, an edge rinse process is performed, and the photosensitive resist film F3 remaining on the peripheral portion of the substrate W is removed by positive tone development.
　上記の２段階のエッジリンス処理の後、基板Ｗは、熱処理部１２３に搬送され、加熱ユニットＰＨＰまたは冷却ユニットＣＰにより基板Ｗに所定の熱処理が行われる。その後、基板Ｗは、図１０のエッジ露光部４０ｂに搬送され、スピンチャック４１により保持および回転される。この状態で、図１４（ａ）に示すように、光源４２から基板Ｗの周縁部の一定幅の領域に露光光が照射される。これにより、基板Ｗ上の周縁部における感光性レジスト膜Ｆ２の一定幅の領域にエッジ露光処理が行われる。エッジ露光処理の後、冷却ユニットＣＰにより基板Ｗに冷却処理が行われる。 (4) After the two-stage edge rinsing process, the substrate W is transported to the heat treatment unit 123, and the heating unit PHP or the cooling unit CP performs a predetermined heat treatment on the substrate W. Thereafter, the substrate W is transported to the edge exposure unit 40b in FIG. 10 and is held and rotated by the spin chuck 41. In this state, as shown in FIG. 14A, the light source 42 irradiates exposure light to a region having a constant width on the periphery of the substrate W. Thus, an edge exposure process is performed on a region having a constant width of the photosensitive resist film F2 at a peripheral portion on the substrate W. After the edge exposure processing, the cooling processing is performed on the substrate W by the cooling unit CP.
　その後、基板Ｗは図８の露光装置１５に搬送され、基板Ｗに露光処理が行われる。これにより、金属含有レジスト膜Ｆ４が所定のパターンに露光される。露光装置１５による露光処理の後、基板Ｗは熱処理部１３３に搬送され、加熱ユニットＰＨＰまたは冷却ユニットＣＰにより基板Ｗに露光後ベーク（ＰＥＢ）処理を含む所定の熱処理が行われる。 Then, the substrate W is transported to the exposure device 15 in FIG. 8, and the substrate W is exposed. Thereby, the metal-containing resist film F4 is exposed in a predetermined pattern. After the exposure processing by the exposure device 15, the substrate W is transported to the heat treatment unit 133, and the heating unit PHP or the cooling unit CP performs predetermined heat treatment including post-exposure bake (PEB) on the substrate W.
　ＰＥＢ処理の後、基板Ｗは図９の現像処理部１３１に搬送され、スピンチャック３１により保持および回転される。この状態で、図１４（ｂ）に示すように、現像ノズル３３から現像液が基板Ｗの被処理面に吐出される。現像液としては、金属含有レジスト膜Ｆ４を溶かしかつ感光性レジスト膜Ｆ２，Ｆ３を溶かさない液が用いられる。具体的には、現像液として、例えばｎＢＡ（酢酸ｎ－ブチル：n-butyl acetate）または２－ヘプタノン（2-Heptanone）を含む有機溶媒等の現像液が用いられる。これにより、ネガティブトーン現像処理が行われ、金属含有レジスト膜Ｆ４が所定のパターンに形成される。 After the PEB process, the substrate W is transported to the developing unit 131 shown in FIG. 9 and is held and rotated by the spin chuck 31. In this state, the developing solution is discharged from the developing nozzle 33 onto the surface to be processed of the substrate W, as shown in FIG. As the developing solution, a solution that dissolves the metal-containing resist film F4 but does not dissolve the photosensitive resist films F2 and F3 is used. Specifically, a developer such as an organic solvent containing nBA (n-butyl acetate) or 2-heptanone is used as the developer. Thereby, a negative tone development process is performed, and the metal-containing resist film F4 is formed in a predetermined pattern.
　現像処理の後、基板Ｗは、図１４（ｃ）に示すように、スピンチャック３１により回転される基板Ｗの周縁部にエッジリンスノズル３５によりリンス液が吐出される。図１４（ｃ）のリンス液としては、感光性レジスト膜Ｆ２を溶かしかつ金属含有レジスト膜Ｆ４を溶かさない液が用いられる。具体的には、リンス液として、例えばＴＭＡＨまたはＫＯＨを含むアルカリ性水溶液等の現像液が用いられる。これにより、エッジリンス処理が行われ、基板Ｗの周縁部に残存する感光性レジスト膜Ｆ２がポジティブトーン現像により除去される。その後、基板Ｗは、現像ブロック１３からインデクサブロック１１に搬送され、基板処理が終了する。 (4) After the development processing, a rinse liquid is discharged from the edge rinse nozzle 35 onto the peripheral portion of the substrate W rotated by the spin chuck 31 as shown in FIG. A liquid that dissolves the photosensitive resist film F2 and does not dissolve the metal-containing resist film F4 is used as the rinse liquid in FIG. Specifically, a developing solution such as an alkaline aqueous solution containing TMAH or KOH is used as the rinsing solution. As a result, an edge rinse process is performed, and the photosensitive resist film F2 remaining on the peripheral portion of the substrate W is removed by positive tone development. Thereafter, the substrate W is transported from the developing block 13 to the indexer block 11, and the substrate processing ends.
　（３）基板処理装置の動作
　図８～図１４を参照しながら基板処理装置１００の動作を説明する。なお、以下の説明では、図９の現像処理部１３１に積層された複数の現像処理ユニット３０のうち、上部に配置された半数の現像処理ユニット３０を上段の現像処理ユニット３０と呼ぶ。一方、下部に配置された残り半数の現像処理ユニット３０を下段の現像処理ユニット３０と呼ぶ。 (3) Operation of Substrate Processing Apparatus The operation of the substrate processing apparatus 100 will be described with reference to FIGS. In the following description, of the plurality of development processing units 30 stacked in the development processing unit 131 in FIG. 9, half of the development processing units 30 arranged on the upper side are referred to as upper development processing units 30. On the other hand, the remaining half of the development processing units 30 arranged at the lower part are referred to as lower development processing units 30.
　インデクサブロック１１の各部の動作は、第１の実施の形態におけるインデクサブロック１１の各部の動作とそれぞれ同様である。また、基板Ｗに図５（ａ）～図６（ｂ）の処理が行われた後、所定の熱処理が行われるまでの塗布ブロック１２の各部の動作は、第１の実施の形態における塗布ブロック１２の各部の動作とそれぞれ同様である。 The operation of each unit of the indexer block 11 is the same as the operation of each unit of the indexer block 11 in the first embodiment. Further, after the processing of FIGS. 5A to 6B is performed on the substrate W, the operation of each part of the coating block 12 until a predetermined heat treatment is performed is the same as that of the coating block in the first embodiment. The operation is the same as that of each of the 12 units.
　その後、塗布ブロック１２において、搬送装置１２７は、基板Ｗを塗布処理部１２１の上段のいずれかの塗布処理ユニット２０、上段熱処理部１０１の加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。この場合、塗布処理ユニット２０において、図１２（ａ）に示すように基板Ｗ上に感光性レジスト膜Ｆ３が形成され、図１２（ｂ）に示すように基板Ｗにベベルリンス処理が行われる。また、加熱ユニットＰＨＰにおいて、基板Ｗが９０℃～１３０℃に加熱された後、冷却ユニットＣＰにおいて冷却される。 After that, in the coating block 12, the transport device 127 transports the substrate W to any one of the upper coating processing units 20 of the coating processing unit 121, the heating unit PHP of the upper thermal processing unit 101, and the cooling unit CP. In this case, in the coating processing unit 20, a photosensitive resist film F3 is formed on the substrate W as shown in FIG. 12A, and the substrate W is subjected to Vebberrus processing as shown in FIG. 12B. Further, in the heating unit PHP, after the substrate W is heated to 90 ° C. to 130 ° C., it is cooled in the cooling unit CP.
　その後、搬送装置１２７は、基板Ｗを上段熱処理部１０１のエッジ露光部４０ａおよび冷却ユニットＣＰに順に搬送する。この場合、エッジ露光部４０ａにおいて、図１２（ｃ）に示すように基板Ｗにエッジ露光処理が行われ、冷却ユニットＣＰにおいて基板Ｗが冷却される。 Then, the transfer device 127 transfers the substrate W to the edge exposure unit 40a of the upper heat treatment unit 101 and the cooling unit CP in order. In this case, the edge exposure processing is performed on the substrate W in the edge exposure unit 40a as shown in FIG. 12C, and the substrate W is cooled in the cooling unit CP.
　その後、搬送装置１２７は、基板Ｗを塗布処理部１２１の上段のいずれかの塗布処理ユニット２０、上段熱処理部１０１の加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。この場合、塗布処理ユニット２０において、図１３（ａ）に示すように基板Ｗ上に金属含有レジスト膜Ｆ４が形成された後、図１３（ｂ）および図１３（ｃ）に示すように基板Ｗに２段階のエッジリンス処理が行われる。また、加熱ユニットＰＨＰにおいて、基板Ｗが９０℃～２００℃に加熱された後、冷却ユニットＣＰにおいて冷却される。 Then, the transport device 127 transports the substrate W to one of the upper coating processing units 20 of the coating processing unit 121, the heating unit PHP and the cooling unit CP of the upper thermal processing unit 101 in this order. In this case, in the coating processing unit 20, after the metal-containing resist film F4 is formed on the substrate W as shown in FIG. 13A, the substrate W is formed as shown in FIGS. 13B and 13C. , A two-stage edge rinse process is performed. Further, in the heating unit PHP, the substrate W is heated to 90 ° C. to 200 ° C., and then cooled in the cooling unit CP.
　その後、搬送装置１２７は、基板Ｗを上段熱処理部１０１のエッジ露光部４０ｂおよび冷却ユニットＣＰに順に搬送する。この場合、エッジ露光部４０ｂにおいて、図１４（ａ）に示すように基板Ｗにエッジ露光処理が行われ、冷却ユニットＣＰにおいて基板Ｗが冷却される。最後に、搬送装置１２７は、冷却後の基板Ｗを基板載置部Ｐ５（図１１）に搬送する。また、搬送装置１２７は、基板載置部Ｐ６（図１１）に載置された現像処理後の基板Ｗを基板載置部Ｐ２（図１１）に搬送する。 Then, the transfer device 127 transfers the substrate W to the edge exposure unit 40b of the upper heat treatment unit 101 and the cooling unit CP in order. In this case, the edge exposure unit 40b performs an edge exposure process on the substrate W as shown in FIG. 14A, and cools the substrate W in the cooling unit CP. Finally, the transport device 127 transports the cooled substrate W to the substrate platform P5 (FIG. 11). In addition, the transport device 127 transports the substrate W after the development processing placed on the substrate platform P6 (FIG. 11) to the substrate platform P2 (FIG. 11).
　同様に、基板Ｗに図５（ａ）～図６（ｂ）の処理が行われた後、搬送装置１２８（図１１）は、基板Ｗを塗布処理部１２１の下段のいずれかの塗布処理ユニット２０、下段熱処理部１０２（図１０）の加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。次に、搬送装置１２８は、基板Ｗを塗布処理部１２１の下段のいずれかの塗布処理ユニット２０、下段熱処理部１０２の加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。 Similarly, after the processing shown in FIGS. 5A to 6B is performed on the substrate W, the transfer device 128 (FIG. 11) transfers the substrate W to one of the lower coating processing units in the coating processing unit 121. 20, and sequentially transported to the heating unit PHP and the cooling unit CP of the lower heat treatment unit 102 (FIG. 10). Next, the transport device 128 sequentially transports the substrate W to any one of the lower coating processing units 20 of the coating processing unit 121, the heating unit PHP and the cooling unit CP of the lower heat treatment unit 102.
　続いて、搬送装置１２８は、基板Ｗを下段熱処理部１０２のエッジ露光部４０ａ、冷却ユニットＣＰ、塗布処理部１２１の下段のいずれかの塗布処理ユニット２０、下段熱処理部１０２の加熱ユニットＰＨＰおよび冷却ユニットＣＰに順に搬送する。その後、搬送装置１２８は、基板Ｗを下段熱処理部１０２のエッジ露光部４０ｂ、冷却ユニットＣＰおよび基板載置部Ｐ７（図１１）に順に搬送する。また、搬送装置１２８は、基板載置部Ｐ８（図１１）に載置された現像処理後の基板Ｗを基板載置部Ｐ４（図１１）に搬送する。 Subsequently, the transport device 128 transports the substrate W to the edge exposure unit 40 a of the lower heat treatment unit 102, the cooling unit CP, any one of the lower coating treatment units 20 of the coating treatment unit 121, the heating unit PHP of the lower heat treatment unit 102, and the cooling unit. It is transported to the unit CP in order. Thereafter, the transfer device 128 transfers the substrate W to the edge exposure unit 40b of the lower heat treatment unit 102, the cooling unit CP, and the substrate mounting unit P7 (FIG. 11) in this order. The transport device 128 transports the substrate W after the development processing placed on the substrate platform P8 (FIG. 11) to the substrate platform P4 (FIG. 11).
　現像ブロック１３において、搬送装置１３７（図１１）は、基板載置部Ｐ５に載置された基板Ｗを載置兼バッファ部ＰＢ１（図１１）に搬送する。 In the developing block 13, the transport device 137 (FIG. 11) transports the substrate W placed on the substrate platform P5 to the loading / buffer unit PB1 (FIG. 11).
　ここで、洗浄乾燥処理ブロック１４Ａに隣接する上段熱処理部１０３（図１０）の加熱ユニットＰＨＰには、露光装置１５による露光処理後でかつ熱処理（ＰＥＢ処理）後の基板Ｗが載置されている。搬送装置１３７は、加熱ユニットＰＨＰに載置された基板Ｗを冷却ユニットＣＰおよび上段のいずれかの現像処理ユニット３０（図９）に順に搬送する。この場合、冷却ユニットＣＰにおいて、基板Ｗが現像処理に適した温度に冷却される。また、現像処理ユニット３０において、図１４（ｂ）に示すように基板Ｗに現像処理が行われ、図１４（ｃ）に示すように基板Ｗにエッジリンス処理が行われる。最後に、搬送装置１３７は、現像およびエッジリンス処理後の基板Ｗを基板載置部Ｐ６に搬送する。 Here, the substrate W after the exposure processing by the exposure device 15 and the heat treatment (PEB processing) is placed in the heating unit PHP of the upper heat treatment section 103 (FIG. 10) adjacent to the cleaning / drying processing block 14A. . The transport device 137 sequentially transports the substrate W placed on the heating unit PHP to the cooling unit CP and one of the upper development processing units 30 (FIG. 9). In this case, in the cooling unit CP, the substrate W is cooled to a temperature suitable for the development processing. Further, in the development processing unit 30, the development processing is performed on the substrate W as shown in FIG. 14B, and the edge rinsing processing is performed on the substrate W as shown in FIG. 14C. Finally, the transport device 137 transports the substrate W after the development and the edge rinsing process to the substrate platform P6.
　同様に、搬送装置１３８（図１１）は、基板載置部Ｐ７に載置された基板Ｗを載置兼バッファ部ＰＢ２（図１１）に搬送する。また、搬送装置１３８は、洗浄乾燥処理ブロック１４Ａに隣接する下段熱処理部１０４（図１０）の加熱ユニットＰＨＰに載置された露光処理後でかつ熱処理（ＰＥＢ処理）後の基板Ｗを冷却ユニットＣＰ、下段のいずれかの現像処理ユニット３０（図９）および基板載置部Ｐ８に順に搬送する。下段の現像処理ユニット３０および下段熱処理部１０４における基板Ｗの処理内容は、上段の現像処理ユニット３０および上段熱処理部１０３における基板Ｗの処理内容とそれぞれ同様である。 Similarly, the transport device 138 (FIG. 11) transports the substrate W mounted on the substrate mounting portion P7 to the mounting and buffering portion PB2 (FIG. 11). In addition, the transport device 138 removes the substrate W after the exposure processing and the heat treatment (PEB processing) placed on the heating unit PHP of the lower heat treatment unit 104 (FIG. 10) adjacent to the cleaning / drying processing block 14A. , And are sequentially conveyed to one of the lower developing units 30 (FIG. 9) and the substrate mounting portion P8. The processing contents of the substrate W in the lower development processing unit 30 and the lower heat treatment unit 104 are the same as the processing contents of the substrate W in the upper development processing unit 30 and the upper heat treatment unit 103, respectively.
　洗浄乾燥処理ブロック１４Ａにおいて、搬送装置１４１（図８）は、載置兼バッファ部ＰＢ１，ＰＢ２（図１１）に載置された基板Ｗを洗浄乾燥処理部１６１の洗浄乾燥処理ユニットＳＤ１（図９）に搬送する。続いて、搬送装置１４１は、基板Ｗを洗浄乾燥処理ユニットＳＤ１から載置兼冷却部ＰＣＰ（図１１）に搬送する。この場合、洗浄乾燥処理ユニットＳＤ１において、基板Ｗの洗浄および乾燥処理が行われた後、載置兼冷却部ＰＣＰにおいて、露光装置１５（図８）における露光処理に適した温度に基板Ｗが冷却される。 In the cleaning / drying processing block 14A, the transport device 141 (FIG. 8) removes the substrate W placed on the mounting / buffer units PB1 and PB2 (FIG. 11) from the cleaning / drying processing unit SD1 of the cleaning / drying processing unit 161 (FIG. 9). ). Subsequently, the transfer device 141 transfers the substrate W from the cleaning / drying processing unit SD1 to the mounting / cooling unit PCP (FIG. 11). In this case, after the cleaning and drying processing of the substrate W is performed in the cleaning / drying processing unit SD1, the substrate W is cooled to a temperature suitable for the exposure processing in the exposure device 15 (FIG. 8) in the mounting and cooling unit PCP. Is done.
　搬送装置１４２（図８）は、基板載置部Ｐ９に載置された露光処理後の基板Ｗを洗浄乾燥処理部１６２の洗浄乾燥処理ユニットＳＤ２（図１０）に搬送する。また、搬送装置１４２は、洗浄および乾燥処理後の基板Ｗを洗浄乾燥処理ユニットＳＤ２から上段熱処理部１０３の加熱ユニットＰＨＰまたは下段熱処理部１０４の加熱ユニットＰＨＰに搬送する。この加熱ユニットＰＨＰにおいては、基板Ｗが１００℃～２００℃に加熱されることにより基板ＷにＰＥＢ処理が行われる。 The transfer device 142 (FIG. 8) transfers the substrate W after the exposure processing placed on the substrate placement part P9 to the cleaning / drying processing unit SD2 (FIG. 10) of the cleaning / drying processing part 162. Further, the transfer device 142 transfers the substrate W after the cleaning and drying processing from the cleaning and drying processing unit SD2 to the heating unit PHP of the upper heat treatment unit 103 or the heating unit PHP of the lower heat treatment unit 104. In this heating unit PHP, the substrate W is subjected to PEB processing by being heated to 100 ° C. to 200 ° C.
　搬入搬出ブロック１４Ｂにおいて、搬送装置１４３（図８）は、載置兼冷却部ＰＣＰに載置された露光処理前の基板Ｗを露光装置１５に搬送する。また、搬送装置１４３は、露光装置１５から露光処理後の基板Ｗを取り出し、その基板Ｗを基板載置部Ｐ９に搬送する。 (4) In the carry-in / carry-out block 14B, the carrying device 143 (FIG. 8) carries the substrate W before the exposure processing placed on the placing / cooling unit PCP to the exposure device 15. In addition, the transport device 143 takes out the substrate W after the exposure processing from the exposure device 15 and transports the substrate W to the substrate platform P9.
　（４）効果
　本実施の形態に係る基板処理装置１００においては、感光性レジスト膜Ｆ２は基板Ｗの周縁部のみでなく下層膜Ｆ１を覆うように基板Ｗの被処理面の全面に形成され、感光性レジスト膜Ｆ３は感光性レジスト膜Ｆ２上に形成される。したがって、金属含有レジスト膜Ｆ４は、基板Ｗの周縁部近傍で盛り上がることなく感光性レジスト膜Ｆ３上に均一な厚みで形成される。 (4) Effect In the substrate processing apparatus 100 according to the present embodiment, the photosensitive resist film F2 is formed on the entire surface of the substrate W to be processed so as to cover not only the peripheral portion of the substrate W but also the lower layer film F1, The photosensitive resist film F3 is formed on the photosensitive resist film F2. Therefore, the metal-containing resist film F4 is formed with a uniform thickness on the photosensitive resist film F3 without rising near the periphery of the substrate W.
　また、金属含有レジスト膜Ｆ４の外周部が除去された際に、感光性レジスト膜Ｆ３の外周部に金属含有レジスト膜Ｆ４の金属成分が残存した場合でも、当該金属成分が感光性レジスト膜Ｆ３の外周部ごと除去される。さらに、金属含有レジスト膜Ｆ４が現像された際に、感光性レジスト膜Ｆ２の外周部に金属含有レジスト膜Ｆ４の金属成分が残存した場合でも、当該金属成分が感光性レジスト膜Ｆ２の外周部ごと除去される。 Further, even when the metal component of the metal-containing resist film F4 remains on the outer peripheral portion of the photosensitive resist film F3 when the outer peripheral portion of the metal-containing resist film F4 is removed, the metal component of the photosensitive resist film F3 is removed. The entire outer peripheral portion is removed. Furthermore, even when the metal component of the metal-containing resist film F4 remains on the outer peripheral portion of the photosensitive resist film F2 when the metal-containing resist film F4 is developed, the metal component remains in the outer peripheral portion of the photosensitive resist film F2. Removed.
　そのため、搬送装置１１５，１２７，１２８，１３７，１３８，１４１～１４３が基板Ｗの周縁部を保持した場合でも、搬送装置１１５，１２７，１２８，１３７，１３８，１４１～１４３に金属成分が付着しない。これにより、金属汚染の発生を防止しつつ基板Ｗ上に均一な膜厚を有する金属含有レジスト膜Ｆ４を形成することができる。その結果、基板Ｗの周縁部近傍の金属含有レジスト膜Ｆ４の領域を有効に利用することができ、歩留まりが低下することを防止することができる。 Therefore, even when the transfer devices 115, 127, 128, 137, 138, 141 to 143 hold the peripheral edge of the substrate W, the metal component does not adhere to the transfer devices 115, 127, 128, 137, 138, 141 to 143. . This makes it possible to form the metal-containing resist film F4 having a uniform thickness on the substrate W while preventing the occurrence of metal contamination. As a result, the region of the metal-containing resist film F4 near the periphery of the substrate W can be effectively used, and a decrease in yield can be prevented.
　［３］他の実施の形態
　（１）上記実施の形態において、未処理の基板Ｗが基板処理装置１００に搬入され、基板処理装置１００により基板Ｗの被処理面に下層膜Ｆ１が形成されるが、本発明はこれに限定されない。他の装置により被処理面に下層膜Ｆ１が形成された基板Ｗが基板処理装置１００に搬入されてもよい。この場合、基板処理装置１００により下層膜Ｆ１が形成されない。そのため、塗布処理ユニット２０は、下層膜Ｆ１を形成するための塗布ノズル２３ａを含まなくてもよい。 [3] Other Embodiments (1) In the above embodiment, an unprocessed substrate W is carried into the substrate processing apparatus 100, and the lower layer film F1 is formed on the surface to be processed of the substrate W by the substrate processing apparatus 100. However, the present invention is not limited to this. The substrate W having the lower layer film F1 formed on the surface to be processed by another apparatus may be carried into the substrate processing apparatus 100. In this case, the lower layer film F1 is not formed by the substrate processing apparatus 100. Therefore, the coating processing unit 20 may not include the coating nozzle 23a for forming the lower layer film F1.
　（２）上記実施の形態において、基板処理が他の順序で行われてもよい。例えば、第１の実施の形態において、図６（ｃ）のエッジ露光処理が、図７（ｂ）のエッジリンス処理と図７（ｃ）のエッジリンス処理との間に行われてもよい。第２の実施の形態において、図１２（ｃ）のエッジ露光処理が、図１３（ａ）のエッジリンス処理と図１３（ｂ）のエッジリンス処理との間に行われてもよい。 (2) In the above embodiment, the substrate processing may be performed in another order. For example, in the first embodiment, the edge exposure process of FIG. 6C may be performed between the edge rinse process of FIG. 7B and the edge rinse process of FIG. 7C. In the second embodiment, the edge exposure processing of FIG. 12C may be performed between the edge rinsing processing of FIG. 13A and the edge rinsing processing of FIG. 13B.
　（３）上記実施の形態において、塗布処理ユニット２０は複数の塗布ノズル２３を含むが、本発明はこれに限定されない。塗布処理ユニット２０は単一の塗布ノズル２３を含み、当該塗布ノズル２３が複数の種類の塗布液を吐出可能に構成されてもよい。 (3) In the above embodiment, the coating unit 20 includes the plurality of coating nozzles 23, but the present invention is not limited to this. The coating processing unit 20 may include a single coating nozzle 23, and the coating nozzle 23 may be configured to be able to discharge a plurality of types of coating liquids.
　同様に、上記実施の形態において、塗布処理ユニット２０は複数のエッジリンスノズル２５を含むが、本発明はこれに限定されない。塗布処理ユニット２０は単一のエッジリンスノズル２５を含み、当該エッジリンスノズル２５が複数の種類のリンス液を吐出可能に構成されてもよい。 Similarly, in the above embodiment, the coating processing unit 20 includes the plurality of edge rinse nozzles 25, but the present invention is not limited to this. The coating processing unit 20 may include a single edge rinse nozzle 25, and the edge rinse nozzle 25 may be configured to be able to discharge a plurality of types of rinse liquids.
　（４）上記実施の形態においては、塗布ブロック１２で異なる種類の処理液（例えば有機溶媒および水溶液）がリンス液として用いられる。そのため、有機溶媒を含むリンス液と水溶液を含むリンス液とを分離して回収するための機構が塗布ブロック１２に設けられてもよい。 (4) In the above embodiment, different types of processing liquids (for example, an organic solvent and an aqueous solution) are used as the rinsing liquid in the coating block 12. Therefore, a mechanism for separating and collecting a rinse liquid containing an organic solvent and a rinse liquid containing an aqueous solution may be provided in the application block 12.
　同様に、第２の実施の形態においては、現像ブロック１３で異なる種類の処理液が現像液およびリンス液として用いられる。そのため、現像液とリンス液とを分離して回収するための機構が現像ブロック１３に設けられてもよい。これらの場合、処理液の廃棄コストを低減することができる。 Similarly, in the second embodiment, different types of processing liquids are used as the developing liquid and the rinsing liquid in the developing block 13. Therefore, a mechanism for separating and collecting the developing solution and the rinsing solution may be provided in the developing block 13. In these cases, the disposal cost of the processing solution can be reduced.
　［４］請求項の各構成要素と実施の形態の各要素との対応関係
　以下、請求項の各構成要素と実施の形態の各要素との対応の例について説明するが、本発明は下記の例に限定されない。請求項の各構成要素として、請求項に記載されている構成または機能を有する他の種々の要素を用いることもできる。 [4] Correspondence relationship between each component of the claim and each element of the embodiment Hereinafter, an example of correspondence between each component of the claim and each element of the embodiment will be described. It is not limited to the example. Various other elements having the configuration or function described in the claims can also be used as the components in the claims.
　上記の実施の形態では、下層膜Ｆ１が被処理膜の例であり、感光性レジスト膜Ｆ２が感光性塗布膜または第１の感光性塗布膜の例であり、感光性レジスト膜Ｆ３が第２の感光性塗布膜の例であり、金属含有レジスト膜Ｆ４が金属含有塗布液の例である。塗布ノズル２３ｂが感光性塗布液供給部または第１の感光性塗布液供給部の例であり、塗布ノズル２３ｃが金属含有塗布液供給部の例であり、塗布ノズル２３ｄが第２の感光性塗布液供給部の例である。 In the above embodiment, the lower layer film F1 is an example of the film to be processed, the photosensitive resist film F2 is an example of the photosensitive coating film or the first photosensitive coating film, and the photosensitive resist film F3 is the second photosensitive coating film. And the metal-containing resist film F4 is an example of the metal-containing coating liquid. The coating nozzle 23b is an example of a photosensitive coating liquid supply unit or a first photosensitive coating liquid supply unit, the coating nozzle 23c is an example of a metal-containing coating liquid supply unit, and the coating nozzle 23d is a second photosensitive coating liquid supply unit. It is an example of a liquid supply unit.
　エッジ露光部４０がエッジ露光部の例であり、エッジ露光部４０ａ，４０ｂがそれぞれ第１および第２のエッジ露光部の例であり、エッジリンスノズル２５ｂ，２５ｃ，３５がそれぞれ第１～第３の除去液供給部の例である。基板処理装置１００が基板処理装置の例であり、露光装置１５が露光装置の例であり、現像ノズル３３が現像液供給部の例である。 The edge exposure section 40 is an example of an edge exposure section, the edge exposure sections 40a and 40b are examples of first and second edge exposure sections, respectively, and the edge rinse nozzles 25b, 25c and 35 are first to third, respectively. 5 is an example of a removing liquid supply unit. The substrate processing apparatus 100 is an example of a substrate processing apparatus, the exposure apparatus 15 is an example of an exposure apparatus, and the developing nozzle 33 is an example of a developer supply unit.

Claims (14)

  1. 被処理膜が形成された被処理面を有する基板に感光性塗布液を供給することにより前記被処理膜を覆うように基板の被処理面に感光性塗布膜を形成する感光性塗布液供給部と、
    　基板の被処理面の周縁部上に重なる前記感光性塗布膜の外周部を露光するエッジ露光部と、
    　前記感光性塗布膜上に金属を含有する塗布液を金属含有塗布液として供給することにより前記感光性塗布膜上に金属含有塗布膜を形成する金属含有塗布液供給部と、
    　基板の被処理面の周縁部に重なる前記金属含有塗布膜の外周部が除去されるように前記金属含有塗布膜に第１の除去液を供給する第１の除去液供給部と、
    　前記金属含有塗布膜の外周部が除去された後に、前記感光性塗布膜の露光された外周部が除去されるように前記感光性塗布膜に第２の除去液を供給する第２の除去液供給部とを備える、基板処理装置。     A photosensitive coating solution supply unit for supplying a photosensitive coating solution to a substrate having a surface to be processed on which a film to be processed is formed, thereby forming a photosensitive coating film on the surface to be processed of the substrate so as to cover the film to be processed; When,
    An edge exposure unit that exposes an outer peripheral portion of the photosensitive coating film overlapping on a peripheral portion of a processing surface of the substrate,
    A metal-containing coating liquid supply unit for forming a metal-containing coating film on the photosensitive coating film by supplying a coating liquid containing a metal on the photosensitive coating film as a metal-containing coating liquid,
    A first removing liquid supply unit that supplies a first removing liquid to the metal-containing coating film so that an outer peripheral portion of the metal-containing coating film overlapping a peripheral portion of a processing surface of the substrate is removed;
    A second removing liquid for supplying a second removing liquid to the photosensitive coating film such that an exposed outer peripheral portion of the photosensitive coating film is removed after an outer peripheral portion of the metal-containing coating film is removed; A substrate processing apparatus comprising: a supply unit.
  2. 前記第１の除去液は、前記金属含有塗布膜を溶かしかつ前記感光性塗布膜を溶かさない液であり、
    　前記第２の除去液は、前記感光性塗布膜を溶かしかつ前記金属含有塗布膜を溶かさない液である、請求項１記載の基板処理装置。     The first removal liquid is a liquid that dissolves the metal-containing coating film and does not dissolve the photosensitive coating film,
    The substrate processing apparatus according to claim 1, wherein the second removing liquid is a liquid that dissolves the photosensitive coating film and does not dissolve the metal-containing coating film.
  3. 前記第１の除去液は有機溶媒を含み、
    　前記第２の除去液はポジティブトーン現像を行う現像液を含む、請求項２記載の基板処理装置。     The first removal solution contains an organic solvent;
    The substrate processing apparatus according to claim 2, wherein the second removal liquid includes a developer for performing positive tone development.
  4. 基板を露光する露光装置を用いた基板処理装置であって、
    　被処理膜が形成された被処理面を有する基板に第１の感光性塗布液を供給することにより前記被処理膜を覆うように基板の被処理面に第１の感光性塗布膜を形成する第１の感光性塗布液供給部と、
    　前記第１の感光性塗布液とは感光波長分布が異なる第２の感光性塗布液を前記第１の感光性塗布膜上に供給することにより前記第１の感光性塗布膜上に第２の感光性塗布膜を形成する第２の感光性塗布液供給部と、
    　基板の被処理面の周縁部上に重なる前記第２の感光性塗布膜の外周部を露光する第１のエッジ露光部と、
    　前記第２の感光性塗布膜上に金属を含有する塗布液を金属含有塗布液として供給することにより前記第２の感光性塗布膜上に金属含有塗布膜を形成する金属含有塗布液供給部と、
    　基板の被処理面の周縁部に重なる前記金属含有塗布膜の外周部が除去されるように前記金属含有塗布膜に第１の除去液を供給する第１の除去液供給部と、
    　前記金属含有塗布膜の外周部が除去された後に、前記第２の感光性塗布膜の露光された外周部が除去されるように前記第２の感光性塗布膜に第２の除去液を供給する第２の除去液供給部と、
    　基板の被処理面の周縁部に重なる前記第１の感光性塗布膜の外周部を露光する第２のエッジ露光部と、
    　前記露光装置により所定のパターンに露光された前記金属含有塗布膜が現像されるように前記金属含有塗布膜に現像液を供給する現像液供給部と、
    　前記金属含有塗布膜が現像された後に、前記第１の感光性塗布膜の露光された外周部が除去されるように前記第１の感光性塗布膜に第３の除去液を供給する第３の除去液供給部とを備える、基板処理装置。     A substrate processing apparatus using an exposure apparatus that exposes a substrate,
    A first photosensitive coating liquid is supplied to a substrate having a surface to be processed on which a film to be processed is formed to form a first photosensitive coating film on the surface to be processed of the substrate so as to cover the film to be processed. A first photosensitive coating liquid supply unit;
    A second photosensitive coating solution having a different photosensitive wavelength distribution from the first photosensitive coating solution is supplied onto the first photosensitive coating film to form a second photosensitive coating solution on the first photosensitive coating film. A second photosensitive coating liquid supply unit for forming a photosensitive coating film;
    A first edge exposure unit that exposes an outer peripheral portion of the second photosensitive coating film overlapping a peripheral edge of a processing surface of the substrate;
    A metal-containing coating solution supply unit for forming a metal-containing coating film on the second photosensitive coating film by supplying a coating solution containing a metal on the second photosensitive coating film as a metal-containing coating solution; ,
    A first removing liquid supply unit that supplies a first removing liquid to the metal-containing coating film so that an outer peripheral portion of the metal-containing coating film overlapping a peripheral portion of a processing surface of the substrate is removed;
    After the outer peripheral portion of the metal-containing coating film is removed, a second removing liquid is supplied to the second photosensitive coating film so that the exposed outer peripheral portion of the second photosensitive coating film is removed. A second removing liquid supply unit,
    A second edge exposure unit that exposes an outer peripheral portion of the first photosensitive coating film overlapping a peripheral edge of a processing surface of the substrate;
    A developer supply unit that supplies a developer to the metal-containing coating film so that the metal-containing coating film exposed to a predetermined pattern by the exposure device is developed,
    Supplying a third removing solution to the first photosensitive coating film so that the exposed outer peripheral portion of the first photosensitive coating film is removed after the metal-containing coating film is developed; And a removing liquid supply unit.
  5. 前記第１の除去液は、前記金属含有塗布膜を溶かしかつ前記第１および第２の感光性塗布膜を溶かさない液であり、
    　前記第２の除去液は、前記第２の感光性塗布膜を溶かしかつ前記金属含有塗布膜を溶かさない液であり、
    　前記第３の除去液は、前記第１の感光性塗布膜を溶かしかつ前記金属含有塗布膜を溶かさない液であり、
    　前記現像液は、前記金属含有塗布膜を溶かしかつ前記第１および第２の感光性塗布膜を溶かさない液である、請求項４記載の基板処理装置。     The first removal liquid is a liquid that dissolves the metal-containing coating film and does not dissolve the first and second photosensitive coating films,
    The second removal liquid is a liquid that dissolves the second photosensitive coating film and does not dissolve the metal-containing coating film,
    The third removal liquid is a liquid that dissolves the first photosensitive coating film and does not dissolve the metal-containing coating film,
    The substrate processing apparatus according to claim 4, wherein the developing solution is a solution that dissolves the metal-containing coating film and does not dissolve the first and second photosensitive coating films.
  6. 前記第１の除去液は有機溶媒を含み、
    　前記第２の除去液はポジティブトーン現像を行う現像液を含み、
    　前記第３の除去液はポジティブトーン現像を行う現像液を含み、
    　前記現像液はネガティブトーン現像を行う現像液を含む、請求項５記載の基板処理装置。     The first removal solution contains an organic solvent;
    The second removal liquid includes a developer for performing positive tone development,
    The third removal solution includes a developer for performing positive tone development,
    6. The substrate processing apparatus according to claim 5, wherein the developer includes a developer for performing negative tone development.
  7. 前記第１の感光性塗布膜は、ｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうちいずれかのレジスト膜を含み、
    　前記第２の感光性塗布膜は、ｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうち他のレジスト膜を含む、請求項４～６のいずれか一項に記載の基板処理装置。     The first photosensitive coating film includes any one of an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film,
    The substrate processing according to any one of claims 4 to 6, wherein the second photosensitive coating film includes another resist film among an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film. apparatus.
  8. 被処理膜が形成された被処理面を有する基板に感光性塗布液供給部により感光性塗布液を供給することにより前記被処理膜を覆うように基板の被処理面に感光性塗布膜を形成するステップと、
    　基板の被処理面の周縁部上に重なる前記感光性塗布膜の外周部をエッジ露光部により露光するステップと、
    　前記感光性塗布膜上に金属を含有する塗布液を金属含有塗布液供給部により金属含有塗布液として供給することにより前記感光性塗布膜上に金属含有塗布膜を形成するステップと、
    　基板の被処理面の周縁部に重なる前記金属含有塗布膜の外周部が除去されるように前記金属含有塗布膜に第１の除去液供給部により第１の除去液を供給するステップと、
    　前記金属含有塗布膜の外周部が除去された後に、前記感光性塗布膜の露光された外周部が除去されるように前記感光性塗布膜に第２の除去液供給部により第２の除去液を供給するステップとを含む、基板処理方法。     A photosensitive coating liquid is supplied to a substrate having a surface to be processed on which a film to be processed is formed by a photosensitive coating liquid supply unit to form a photosensitive coating film on the surface to be processed of the substrate so as to cover the film to be processed. Steps to
    Exposing the outer peripheral portion of the photosensitive coating film overlapping the peripheral portion of the processed surface of the substrate by an edge exposure unit,
    Forming a metal-containing coating film on the photosensitive coating film by supplying a coating solution containing a metal on the photosensitive coating film as a metal-containing coating solution by a metal-containing coating solution supply unit;
    Supplying a first removing liquid to the metal-containing coating film by a first removing liquid supply unit such that an outer peripheral portion of the metal-containing coating film overlapping a peripheral portion of a processing surface of the substrate is removed;
    After the outer peripheral portion of the metal-containing coating film is removed, a second removing liquid is supplied to the photosensitive coating film by a second removing liquid supply unit so that the exposed outer peripheral portion of the photosensitive coating film is removed. Supplying a substrate.
  9. 前記第１の除去液を供給するステップは、前記金属含有塗布膜を溶かしかつ前記感光性塗布膜を溶かさない液を供給することを含み、
    　前記第２の除去液を供給するステップは、前記感光性塗布膜を溶かしかつ前記金属含有塗布膜を溶かさない液を供給することを含む、請求項８記載の基板処理方法。     The step of supplying the first removal liquid includes supplying a liquid that dissolves the metal-containing coating film and does not dissolve the photosensitive coating film,
    9. The substrate processing method according to claim 8, wherein the step of supplying the second removing liquid includes supplying a liquid that dissolves the photosensitive coating film and does not dissolve the metal-containing coating film.
  10. 前記第１の除去液を供給するステップは、有機溶媒を供給することを含み、
    　前記第２の除去液を供給するステップは、現像液を供給することによりポジティブトーン現像を行うことを含む、請求項９記載の基板処理方法。     Supplying the first removing liquid includes supplying an organic solvent;
    10. The substrate processing method according to claim 9, wherein the step of supplying the second removing liquid includes performing a positive tone development by supplying a developing liquid.
  11. 基板を露光する露光装置を用いた基板処理方法であって、
    　被処理膜が形成された被処理面を有する基板に第１の感光性塗布液供給部により第１の感光性塗布液を供給することにより前記被処理膜を覆うように基板の被処理面に第１の感光性塗布膜を形成するステップと、
    　第２の感光性塗布液供給部により前記第１の感光性塗布液とは感光波長分布が異なる第２の感光性塗布液を前記第１の感光性塗布膜上に供給することにより前記第１の感光性塗布膜上に第２の感光性塗布膜を形成するステップと、
    　基板の被処理面の周縁部上に重なる前記第２の感光性塗布膜の外周部を第１のエッジ露光部により露光するステップと、
    　前記第２の感光性塗布膜上に金属を含有する塗布液を金属含有塗布液供給部により金属含有塗布液として供給することにより前記第２の感光性塗布膜上に金属含有塗布膜を形成するステップと、
    　基板の被処理面の周縁部に重なる前記金属含有塗布膜の外周部が除去されるように前記金属含有塗布膜に第１の除去液供給部により第１の除去液を供給するステップと、
    　前記金属含有塗布膜の外周部が除去された後に、前記第２の感光性塗布膜の露光された外周部が除去されるように前記第２の感光性塗布膜に第２の除去液供給部により第２の除去液を供給するステップと、
    　基板の被処理面の周縁部に重なる前記第１の感光性塗布膜の外周部を第２のエッジ露光部により露光するステップと、
    　前記露光装置により所定のパターンに露光された前記金属含有塗布膜が現像されるように前記金属含有塗布膜に現像液供給部により現像液を供給するステップと、
    　前記金属含有塗布膜が現像された後に、前記第１の感光性塗布膜の露光された外周部が除去されるように前記第１の感光性塗布膜に第３の除去液供給部により第３の除去液を供給するステップとを含む、基板処理方法。     A substrate processing method using an exposure apparatus that exposes a substrate,
    A first photosensitive coating solution supply unit supplies a first photosensitive coating solution to a substrate having a surface to be processed on which a film to be processed is formed. Forming a first photosensitive coating film;
    By supplying a second photosensitive coating liquid having a different photosensitive wavelength distribution from the first photosensitive coating liquid onto the first photosensitive coating film by a second photosensitive coating liquid supply unit, Forming a second photosensitive coating film on the photosensitive coating film of
    Exposing the outer peripheral portion of the second photosensitive coating film overlapping the peripheral portion of the processing surface of the substrate with a first edge exposure portion;
    A metal-containing coating film is formed on the second photosensitive coating film by supplying a metal-containing coating solution on the second photosensitive coating film as a metal-containing coating solution by a metal-containing coating solution supply unit. Steps and
    Supplying a first removing liquid to the metal-containing coating film by a first removing liquid supply unit such that an outer peripheral portion of the metal-containing coating film overlapping a peripheral portion of a processing surface of the substrate is removed;
    After the outer peripheral portion of the metal-containing coating film is removed, a second removing liquid supply unit is provided on the second photosensitive coating film so that the exposed outer peripheral portion of the second photosensitive coating film is removed. Supplying a second removal liquid by:
    Exposing an outer peripheral portion of the first photosensitive coating film overlapping a peripheral portion of a processing surface of the substrate with a second edge exposure portion;
    Supplying a developer by a developer supply unit to the metal-containing coating film such that the metal-containing coating film exposed to a predetermined pattern by the exposure device is developed;
    After the metal-containing coating film is developed, the first photosensitive coating film is removed by a third removing liquid supply unit so as to remove the exposed outer peripheral portion of the first photosensitive coating film. Supplying a removing liquid for the substrate.
  12. 前記第１の除去液を供給するステップは、前記金属含有塗布膜を溶かしかつ前記第１および第２の感光性塗布膜を溶かさない液を供給することを含み、
    　前記第２の除去液を供給するステップは、前記第２の感光性塗布膜を溶かしかつ前記金属含有塗布膜を溶かさない液を供給することを含み、
    　前記現像液を供給するステップは、前記金属含有塗布膜を溶かしかつ前記第１および第２の感光性塗布膜を溶かさない液を供給することを含み、
    　前記第３の除去液を供給するステップは、前記第１の感光性塗布膜を溶かしかつ前記金属含有塗布膜を溶かさない液を供給することを含む、請求項１１記載の基板処理方法。     Supplying the first removal liquid includes supplying a liquid that dissolves the metal-containing coating film and does not dissolve the first and second photosensitive coating films;
    The step of supplying the second removal liquid includes supplying a liquid that dissolves the second photosensitive coating film and does not dissolve the metal-containing coating film,
    The step of supplying the developer includes supplying a liquid that dissolves the metal-containing coating film and does not dissolve the first and second photosensitive coating films,
    12. The substrate processing method according to claim 11, wherein the step of supplying the third removal liquid includes supplying a liquid that dissolves the first photosensitive coating film and does not dissolve the metal-containing coating film.
  13. 前記第１の除去液を供給するステップは、有機溶媒を供給することを含み、
    　前記第２の除去液を供給するステップは、現像液を供給することによりポジティブトーン現像を行うことを含み、
    　前記現像液を供給するステップは、現像液を供給することによりネガティブトーン現像を行うことを含み、
    　前記第３の除去液を供給するステップは、現像液を供給することによりポジティブトーン現像を行うことを含む、請求項１２記載の基板処理方法。     Supplying the first removing liquid includes supplying an organic solvent;
    The step of supplying the second removal liquid includes performing positive tone development by supplying a developer,
    The step of supplying the developer includes performing negative tone development by supplying a developer,
    13. The substrate processing method according to claim 12, wherein the step of supplying the third removal liquid includes performing a positive tone development by supplying a developer.
  14. 前記第１の感光性塗布膜を形成するステップは、ｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうちいずれかのレジスト膜を形成することを含み、
    　前記第２の感光性塗布膜を形成するステップは、ｉ線レジスト膜、フッ化クリプトンレジスト膜およびフッ化アルゴンレジスト膜のうち他のレジスト膜を形成することを含む、請求項１１～１３のいずれか一項に記載の基板処理方法。     The step of forming the first photosensitive coating film includes forming any one of an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film,
    14. The method according to claim 11, wherein the step of forming the second photosensitive coating film includes forming another resist film among an i-line resist film, a krypton fluoride resist film, and an argon fluoride resist film. The substrate processing method according to claim 1.
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