WO2019234918A1 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
WO2019234918A1
WO2019234918A1 PCT/JP2018/022036 JP2018022036W WO2019234918A1 WO 2019234918 A1 WO2019234918 A1 WO 2019234918A1 JP 2018022036 W JP2018022036 W JP 2018022036W WO 2019234918 A1 WO2019234918 A1 WO 2019234918A1
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WO
WIPO (PCT)
Prior art keywords
infrared light
film forming
substrate
mist
film formation
Prior art date
Application number
PCT/JP2018/022036
Other languages
English (en)
French (fr)
Inventor
容征 織田
Original Assignee
東芝三菱電機産業システム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝三菱電機産業システム株式会社 filed Critical 東芝三菱電機産業システム株式会社
Priority to PCT/JP2018/022036 priority Critical patent/WO2019234918A1/ja
Priority to KR1020207034536A priority patent/KR102487935B1/ko
Priority to DE112018007709.8T priority patent/DE112018007709T5/de
Priority to JP2020523957A priority patent/JP7139085B2/ja
Priority to US17/047,699 priority patent/US20210187543A1/en
Priority to CN201880093587.1A priority patent/CN112135924B/zh
Priority to TW107128819A priority patent/TWI680806B/zh
Publication of WO2019234918A1 publication Critical patent/WO2019234918A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
    • B05B12/18—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area using fluids, e.g. gas streams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B16/00—Spray booths
    • B05B16/20—Arrangements for spraying in combination with other operations, e.g. drying; Arrangements enabling a combination of spraying operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B16/00—Spray booths
    • B05B16/90—Spray booths comprising conveying means for moving objects or other work to be sprayed in and out of the booth, e.g. through the booth
    • B05B16/95—Spray booths comprising conveying means for moving objects or other work to be sprayed in and out of the booth, e.g. through the booth the objects or other work to be sprayed lying on, or being held above the conveying means, i.e. not hanging from the conveying means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/0012—Apparatus for achieving spraying before discharge from the apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B05B7/1606—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air
    • B05B7/1613—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air comprising means for heating the atomising fluid before mixing with the material to be sprayed
    • B05B7/164—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the spraying of the material involving the use of an atomising fluid, e.g. air comprising means for heating the atomising fluid before mixing with the material to be sprayed the material to be sprayed and the atomising fluid being heated by independent sources of heat, without transfer of heat between atomising fluid and material to be sprayed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/30—Processes for applying liquids or other fluent materials performed by gravity only, i.e. flow coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0218—Pretreatment, e.g. heating the substrate
    • B05D3/0227—Pretreatment, e.g. heating the substrate with IR heaters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • B05D3/0263—After-treatment with IR heaters
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/146—By vapour deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1484—Simultaneous treatments, e.g. soldering lead-in-hole components simultaneously with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/15—Position of the PCB during processing
    • H05K2203/1581—Treating the backside of the PCB, e.g. for heating during soldering or providing a liquid coating on the backside
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards

Definitions

  • the present invention relates to a film forming apparatus that is used for manufacturing an electronic device such as a solar battery and forms a thin film on a substrate.
  • CVD Chemical Vapor Deposition
  • chemical vapor deposition often requires film formation under vacuum, and it is necessary to use a large vacuum vessel in addition to a vacuum pump or the like.
  • the chemical vapor deposition method has a problem that it is difficult to adopt a large-area substrate as a film formation substrate from the viewpoint of cost and the like. Therefore, a mist method capable of forming a film under atmospheric pressure has attracted attention.
  • the material solution is ejected from the raw material solution ejection port and the reaction material ejection port provided on the bottom surface of the mist ejection head unit including the mist ejection nozzle and the like with respect to the substrate disposed in the atmosphere.
  • the raw material solution and the reaction material are injected.
  • a film is formed on the substrate by the jetting.
  • the reaction material means a material that contributes to the reaction with the raw material solution.
  • FIG. 3 is an explanatory view showing a schematic configuration of a conventional film forming apparatus.
  • a substrate stacking stage 30 as a substrate mounting portion has a plurality of substrates 10 mounted on the upper surface.
  • the substrate loading stage 30 has an adsorption mechanism 31 by vacuum adsorption, and the adsorption mechanism 31 can adsorb the entire back surface of each of the plurality of substrates 10 placed on the upper surface of the substrate loading stage 30. Further, the substrate loading stage 30 is provided with a heating mechanism 32 below the suction mechanism 31, and the heating mechanism 32 can execute a heating process on the plurality of substrates 10 placed on the upper surface of the substrate loading stage 30. it can.
  • the thin film forming nozzle 1 executes a mist injection process for injecting the raw material mist MT downward from an injection port provided on the injection surface 1S.
  • the raw material mist MT is a mist obtained by making a raw material solution into a mist.
  • the thin film forming nozzle 1 can inject the raw material mist MT into the atmosphere.
  • the thin film forming nozzle 1, the substrate loading stage 30, and the plurality of substrates 10 placed on the upper surface of the substrate loading stage 30 are all stored in the film forming chamber 60.
  • the film forming chamber 60 includes an upper container 68, a lower container 69, and a door 67.
  • the film forming chamber 60 closes the opening between the upper container 68 and the lower container 69 by closing the door 67 so that the thin film forming nozzle 1, the substrate stacking stage 30, and the plurality of substrates 10. Can be shut off from the outside.
  • the substrate 10 placed on the upper surface of the substrate stacking stage 30 is formed by closing the door 67 of the film forming chamber 60 and executing the mist injection process by the thin film forming nozzle 1 during the heating process of the heating mechanism 32.
  • a thin film can be formed thereon.
  • the conventional film forming apparatus forms a thin film on the substrate 10 by simultaneously performing the mist spraying process by the thin film forming nozzle 1 and the heating process by the heating mechanism 32.
  • the heating mechanism 32 is provided inside the substrate stacking stage 30 on which the substrate 10 that is a base material that is a film formation target is placed, and the substrate stacking stage 30 is flattened.
  • the substrate stacking stage 30 is flattened.
  • the upper surface of the substrate loading stage 30 and the back surface of the substrate 10 are brought into contact with each other to transfer heat between the substrate loading stage 30 and the substrate 10 to heat the substrate 10. Will be executed.
  • the planar heating means when the substrate 10 is not flat and has a curved lower surface or a structure with irregularities on the lower surface, in the planar heating means, the contact between the upper surface of the substrate stacking stage 30 and the back surface of the substrate 10 is local. Become. For this reason, there are problems such as non-uniform heating of the substrate 10 when the heating mechanism 32 performs the heat treatment, or warpage of the substrate 10 and deformation.
  • An object of the present invention is to solve the above-described problems and to provide a film forming apparatus capable of forming a thin film on a substrate at a low cost without reducing the film forming quality and the film forming speed. To do.
  • the film forming apparatus is provided with a substrate mounting portion for mounting a substrate and an infrared light lamp provided apart from the substrate mounting portion, and irradiating infrared light from the infrared light lamp
  • a thin film is formed on the surface of the substrate by simultaneously executing the heat treatment according to, and the mist injection processing by the mist injection unit.
  • the film forming apparatus of the present invention according to claim 1 is provided with a heating mechanism that is provided apart from the substrate mounting portion and performs a heat treatment for heating the substrate by irradiating infrared light from an infrared lamp. Yes.
  • the substrate can be directly heated by the heating mechanism without having a contact relationship with the substrate, uniform heating is performed without deforming the substrate regardless of the shape of the substrate. be able to.
  • the film forming apparatus can form a thin film on the substrate at a low cost without reducing the film forming quality and the film forming speed.
  • FIG. 1 is an explanatory diagram showing a schematic configuration of a film forming apparatus according to Embodiment 1 of the present invention.
  • FIG. 1 shows an XYZ orthogonal coordinate system.
  • the film forming apparatus 11 includes a film forming chamber 6A, a thin film forming nozzle 1, an infrared light irradiator 2, and a conveyor 53 as main components.
  • the conveyor 53 which is a substrate placement unit places a plurality of substrates 10 on the upper surface of the belt 52.
  • the conveyor 53 includes a pair of conveyance rollers 51 provided at both left and right ( ⁇ X direction, + X direction) ends, and an endless conveyance belt 52 spanned between the pair of rollers 51.
  • the conveyor 53 can move the upper side (+ Z direction side) belt 52 along the conveyance direction (X direction) by rotationally driving the pair of rollers 51.
  • the pair of rollers 51 of the conveyor 53 is provided outside the film forming chamber 6A, and the belt 52 is provided in the film forming chamber 6A at the center, and part of the left and right ( ⁇ X direction, + X direction) side surfaces of the film forming chamber 6A. It is possible to move between the inside and the outside of the film forming chamber 6 ⁇ / b> A through a pair of openings 63.
  • the thin film forming nozzle 1, a part of the conveyor 53, the plurality of substrates 10 placed on the upper surface of the belt 52 of the conveyor 53, and the infrared light irradiator 2 are accommodated in the film forming chamber 6A.
  • the film formation chamber 6 ⁇ / b> A includes an upper container 61, a lower container 62, and a pair of openings 63.
  • a pair of openings 63 are located between the upper container 61 and the lower container 62 in the height direction, which is the Z direction. Therefore, the conveyor 53 provided between the openings 63 and 63 in the film forming chamber 6 ⁇ / b> A is disposed at a position higher than the lower container 62 and lower than the upper container 61.
  • the infrared light irradiator 2 as a heating mechanism is fixed by a fixing means (not shown) at a position away from the conveyor 53 in the lower container 62.
  • the infrared light irradiator 2 is disposed at a position overlapping the upper surface of the belt 52 in the film forming chamber 6A in plan view.
  • the infrared light irradiator 2 includes a lamp mounting table 21 and a plurality of infrared light lamps 22, and a plurality of infrared light lamps 22 are attached to the upper part of the lamp mounting table 21. Therefore, the infrared light irradiator 2 can irradiate infrared light upward (+ Z direction) from the plurality of infrared light lamps 22.
  • the heat treatment for the plurality of substrates 10 placed on the upper surface of the belt 52 can be executed by the above-described infrared light irradiation by the infrared light irradiator 2.
  • the thin film forming nozzle 1 which is a mist injection unit is fixedly arranged in the upper container 61 by fixing means (not shown). At this time, the thin film forming nozzle 1 is disposed in a positional relationship in which the ejection surface 1S and the upper surface of the belt 52 face each other.
  • the thin film forming nozzle 1 executes a mist injection process for injecting the raw material mist MT downward ( ⁇ Z direction) from the injection port provided on the injection surface 1S.
  • the raw material mist MT is a mist obtained by making a raw material solution into a mist.
  • the thin film forming nozzle 1 can inject the raw material mist MT into the atmosphere.
  • a plurality of substrates placed on the thin film forming nozzle 1 and the belt 52 are formed by closing the opening 63 between the upper container 61 and the lower container 62 by the air curtain 7 when performing the film forming process. 10 and the infrared light irradiator 2 can be shut off from the outside.
  • the film forming apparatus 11 closes the pair of openings 63 of the film forming chamber 6A by the air curtain 7 and moves the belt 52 of the conveyor 53 along the transport direction (X direction).
  • a film forming environment can be set.
  • the film-forming apparatus 11 performs simultaneously the heat processing by the infrared light irradiation of the infrared light irradiation device 2 and the mist injection processing by the thin film forming nozzle 1 in the film-forming environment, thereby forming the film-forming chamber.
  • a thin film is formed on the substrate 10 placed on the upper surface of the belt 52 in 6A.
  • the film forming apparatus 11 is provided apart from the conveyor 53 that is the substrate placement unit, and directly heats the plurality of substrates 10 by irradiating infrared light from the infrared light lamp 22.
  • An infrared light irradiator 2 that performs heat treatment is provided as a heating mechanism.
  • the film forming apparatus 11 of Embodiment 1 can directly heat the substrate 10 by the infrared light irradiator 2 without having a contact relationship with the substrate 10, it is uniform regardless of the shape of the substrate 10. Heating can be performed without deforming the substrate 10.
  • the film forming apparatus 11 of the first embodiment can form a thin film on the substrate 10 at low cost without reducing the film forming quality and the film forming speed.
  • the film forming apparatus 11 of the first embodiment provides the infrared light irradiator 2 as a heating mechanism in the film forming chamber 6A, so that infrared light is applied to the substrate 10 without passing through the film forming chamber 6A.
  • the irradiation efficiency of infrared light can be increased by the amount that can be irradiated.
  • the infrared light irradiation from the infrared light irradiator 2 located below the conveyor 53 is performed upward (+ Z direction)
  • the infrared light is transmitted from the conveyor 53.
  • the plurality of substrates 10 are irradiated via the belt 52 (upper side and lower side).
  • the belt 52 is constituted by a combination of a pair of linear conveyor chains, and the first correspondence is made to have a structure in which an infrared light passage opening is present, and the infrared light is absorbed.
  • a second correspondence is conceivable in which an infrared light transmitting material having excellent infrared light transmission is used as a constituent material of the belt 52.
  • the degree of absorption of infrared light by the belt 52 can be minimized.
  • the infrared light transmitting material for example, germanium, silicon, zinc sulfide, zinc selenide and the like can be considered. However, it is necessary to satisfy the strength for use as the belt 52.
  • the wavelength of the infrared light emitted from the infrared light irradiator 2 is set to avoid the absorption wavelength region of the raw material mist MT.
  • the wavelength of the infrared light emitted from the infrared light irradiator 2 in the range of 700 to 900 nm. It is because the absorption wavelength range of the raw material mist MT using the assumed solvent can be avoided by the above specific setting.
  • the wavelength of the infrared light irradiated from the infrared light irradiator 2 is set in the range of 700 to 900 nm as in the above specific setting, when the solvent of the film forming raw material solution is water or toluene, the raw material mist MT It has been confirmed as a known fact that it is outside the absorption wavelength range.
  • the film forming apparatus 11 employs the first modified example, whereby the raw material mist MT absorbs infrared light irradiated from the infrared light irradiator 2 and the raw material mist MT is heated and evaporated. There is an effect that the occurrence of the mist evaporation phenomenon can be avoided.
  • the above-described raw material mist evaporation phenomenon can be reduced with respect to the raw material mist MT of all assumed raw materials. There exists an effect which can avoid generating.
  • FIG. 2 is an explanatory diagram showing a schematic configuration of a film forming apparatus according to Embodiment 2 of the present invention.
  • FIG. 2 shows an XYZ orthogonal coordinate system.
  • the film forming apparatus 12 of the second embodiment includes a film forming chamber 6B, a thin film forming nozzle 1, an infrared light irradiator 2, and a conveyor 53 as main components.
  • the thin film forming nozzle 1, a part of the conveyor 53, and the plurality of substrates 10 placed on the upper surface of the belt 52 of the conveyor 53 are accommodated in the film forming chamber 6B.
  • the film forming chamber 6B includes an upper container 61, a lower container 62B, and a pair of openings 63, and the pair of openings 63 are provided in part of the left and right side surfaces of the film forming chamber 6B.
  • a pair of opening part 63 is located between the upper container 61 and the lower container 62B in the height direction which is a Z direction.
  • the film forming chamber 6B is made of an infrared light transmitting material having excellent permeability without absorbing the infrared light irradiated from the infrared light irradiator 2. Specifically, the film forming chamber 6B employs quartz glass as a constituent material.
  • the infrared light irradiator 2 as a heating mechanism is fixed by a fixing means (not shown) at a position away from the conveyor 53 below ( ⁇ Z direction) outside the lower container 62B.
  • the infrared light irradiator 2 is disposed at a position overlapping the upper surface of the belt 52 in the film forming chamber 6B in plan view.
  • the infrared light irradiator 2 irradiates infrared light upward from the plurality of infrared light lamps 22 to the plurality of substrates 10 placed on the upper surface of the belt 52 via the lower container 62B and the belt 52. Heat treatment can be performed.
  • the film forming chamber 6 ⁇ / b> B closes the opening 63 between the upper container 61 and the lower container 62 ⁇ / b> B by the air curtain 7, so that a plurality of films placed on the thin film forming nozzle 1 and the belt 52 are placed.
  • the substrate 10 can be shut off from the outside.
  • the film forming apparatus 12 of the second embodiment closes the pair of openings 63 of the film forming chamber 6B by the air curtain 7 and moves the belt 52 of the conveyor 53 in the transport direction (X direction).
  • a film forming environment can be set.
  • the film-forming apparatus 12 performs simultaneously the heat processing by the infrared light irradiation of the infrared light irradiation device 2 and the mist injection processing by the thin film forming nozzle 1 in the film-forming environment, thereby forming the film-forming chamber.
  • a thin film is formed on the substrate 10 placed on the upper surface of the belt 52 in 6B.
  • the film forming apparatus 12 is provided apart from the belt 52 which is the substrate placement unit, and heats the plurality of substrates 10 by irradiating infrared light from the infrared light lamp 22.
  • An infrared light irradiator 2 that performs processing is provided as a heating mechanism.
  • the film forming apparatus 12 of the second embodiment can heat the substrate 10 by the infrared light irradiator 2 without having a contact relationship with the substrate 10 as in the first embodiment. Irrespective of the shape, uniform heating can be performed without deforming the substrate 10.
  • the film forming apparatus 12 of the second embodiment can form a thin film on the substrate 10 at a low cost without lowering the film forming quality and the film forming speed as in the first embodiment.
  • the film forming apparatus 12 of the second embodiment simplifies maintenance of the infrared light irradiator 2 such as replacement of the infrared light lamp 22 by providing the infrared light irradiator 2 outside the film forming chamber 6B. Can be achieved.
  • the film forming chamber 6B of the film forming apparatus 12 uses quartz glass, which is an infrared light transmitting material excellent in the transmittance of infrared light irradiated from the infrared light lamp 22, as a constituent material. Therefore, the infrared light absorption degree by the bottom surface of the lower container 62 when the substrate 10 is heated through the bottom surface of the lower container 62 in the film formation chamber 6B is effectively reduced.
  • the constituent material of at least the bottom surface of the lower container 62B in the film forming chamber 6B is made of quartz glass which is an infrared light transmitting material, the above effect can be exhibited.
  • the following materials can be considered as infrared light transmitting materials.
  • Borosilicate glass, sapphire, calcium fluoride, barium fluoride, magnesium fluoride, lithium fluoride, and the like are considered to be infrared light transmitting materials other than quartz glass because they have high transmittance for near infrared light. That is, the constituent material of the film formation chamber 6B may include at least one of quartz glass, borosilicate glass, sapphire, calcium fluoride, barium fluoride, magnesium fluoride, and lithium fluoride.
  • the film forming apparatus 12 of the second embodiment at least one of the first and second correspondences regarding the infrared light absorption by the belt 52 may be adopted as in the first embodiment.
  • the wavelength of infrared light emitted from the infrared light irradiator 2 is related to the first modification (described in the first embodiment). (Including specific settings).

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Abstract

本発明は、成膜品質や成膜速度を落とすことなく、低コストで基板上に薄膜を成膜することができる成膜装置を提供することを目的とする。そして、本発明において、赤外光照射器（２）は下部容器（６２）内のコンベア（５３）から離れた位置に配置される。赤外光照射器（２）は、複数の赤外光ランプ（２２）から上方に向けて赤外光を照射してベルト５２の上面に載置した複数の基板１０に対する加熱処理を実行する。成膜室（６Ａ）内において、赤外光照射器２の赤外光照射による加熱処理と、薄膜形成ノズル（１）によるミスト噴射処理とを同時に実行することにより、ベルト（５２）の上面に載置された基板（１０）上に薄膜を成膜する。

Description

成膜装置
　この発明は、太陽電池などの電子デバイスの製造に用いられ、基板上に薄膜を成膜する成膜装置に関するものである。
　基板上に膜を成膜する方法として、化学気相成長（ＣＶＤ(Chemical Vapor Deposition)）法がある。しかしながら、化学気相成長法では真空下での成膜が必要な場合が多くなり、真空ポンプなどに加えて、大型の真空容器を用いる必要がある。さらに、化学気相成長法では、コスト等の観点から、成膜される基板として大面積のものを採用することが困難である、という問題があった。そこで、大気圧下における成膜処理が可能なミスト法が、注目されている。
　ミスト法を利用した成膜装置に関する従来技術として、例えば特許文献１に係る技術が存在している。
　特許文献１に係る技術では、ミスト噴射用ノズル等を含むミスト噴射ヘッド部の底面に設けられる原料溶液噴出口及び反応材料噴出口から、大気中に配置されている基板に対してミスト化された原料溶液及び反応材料が噴射されている。当該噴射により、基板上には膜が成膜される。なお、反応材料は原料溶液との反応に寄与する材料を意味する。
　図３は従来の成膜装置の概略構成を示す説明図である。同図に示すように、基板載置部である基板積載ステージ３０は上面に複数の基板１０を載置している。
　基板積載ステージ３０は真空吸着による吸着機構３１を有し、この吸着機構３１により、載置した複数の基板１０それぞれの裏面全体を、基板積載ステージ３０の上面上に吸着することができる。さらに、基板積載ステージ３０は吸着機構３１の下方に加熱機構３２が設けられており、この加熱機構３２により、基板積載ステージ３０の上面に載置した複数の基板１０に対する加熱処理を実行することができる。
　薄膜形成ノズル１（ミスト噴射部）は噴射面１Ｓに設けられた噴射口から下方に原料ミストＭＴを噴射するミスト噴射処理を実行する。なお、原料ミストＭＴは原料溶液をミスト化して得られるミストであり、薄膜形成ノズル１によって原料ミストＭＴを大気中に噴射することができる。
　薄膜形成ノズル１、基板積載ステージ３０、基板積載ステージ３０の上面に載置された複数の基板１０は全て成膜室６０に収納される。成膜室６０は上部容器６８、下部容器６９及び扉６７により構成される。成膜室６０は、成膜処理を行う際、扉６７を閉状態にして上部容器６８，下部容器６９間の開口部を塞ぐことにより、薄膜形成ノズル１、基板積載ステージ３０及び複数の基板１０を外部から遮断することができる。
　したがって、成膜室６０の扉６７を閉状態にし、加熱機構３２の加熱処理中に、薄膜形成ノズル１によりミスト噴射処理を実行することにより、基板積載ステージ３０の上面に載置された基板１０上に薄膜を成膜することができる。
　このように、従来の成膜装置は、薄膜形成ノズル１によるミスト噴射処理と加熱機構３２による加熱処理とを同時に実行することにより薄膜を基板１０上に成膜している。
国際公開第２０１７／０６８６２５号
　上述したように、従来の成膜装置は、成膜対象物となる基材である基板１０を上面上に載置する基板積載ステージ３０の内部に加熱機構３２を設け、基板積載ステージ３０を平面型加熱手段として用いるのが一般的であった。
　基板積載ステージ３０のような平面型加熱手段を用いる場合、基板積載ステージ３０の上面と基板１０の裏面とを接触させ、基板積載ステージ３０，基板１０間を伝熱させて基板１０の加熱処理を実行することになる。
　しかし、基板１０が平板形状ではなく、その下面が湾曲したものや、下面に凹凸がある構造を呈する場合、平面型加熱手段では、基板積載ステージ３０の上面と基板１０の裏面との接触が局所的になる。このため、加熱機構３２による加熱処理の実行時に基板１０の加熱が不均一になったり、基板１０に反りが発生して変形したりする等の問題点があった。
　本発明では、上記のような問題点を解決し、成膜品質や成膜速度を落とすことなく、低コストで基板上に薄膜を成膜することができる成膜装置を提供することを目的とする。
　この発明に係る成膜装置は、基板を載置する基板載置部と、前記基板載置部と離れて設けられ、赤外光ランプを有し、前記赤外光ランプから赤外光を照射して前記基板を加熱する加熱処理を実行する加熱機構と、原料溶液をミスト化して得られる原料ミストを前記基板の表面に噴射するミスト噴射処理を実行するミスト噴射部とを備え、前記加熱機構による前記加熱処理と前記ミスト噴射部による前記ミスト噴射処理とを同時に実行することにより、前記基板の表面に薄膜を成膜することを特徴とする。
　請求項１記載の本願発明の成膜装置は、基板載置部から離れて設けられ、赤外光ランプから赤外光を照射することにより基板を加熱する加熱処理を実行する加熱機構を備えている。
　したがって、請求項１記載の本願発明は、基板と接触関係をもたせることなく、加熱機構によって基板を直接加熱することができるため、基板の形状に関わらず均一な加熱を基板を変形させることなく行うことができる。
　その結果、請求項１記載の本願発明の成膜装置は、成膜品質や成膜速度を落とすことなく、低コストで基板上に薄膜を成膜することができる。
　この発明の目的、特徴、局面、および利点は、以下の詳細な説明と添付図面とによって、より明白となる。
この発明の実施の形態１である成膜装置の概略構成を示す説明図である。 この発明の実施の形態２である成膜装置の概略構成を示す説明図である。 従来の成膜装置の概略構成を示す説明図である。
　＜実施の形態１＞
　図１はこの発明の実施の形態１である成膜装置の概略構成を示す説明図である。図１にＸＹＺ直交座標系を記す。
　図１に示すように、実施の形態１の成膜装置１１は、成膜室６Ａ、薄膜形成ノズル１、赤外光照射器２及びコンベア５３を主要構成要素として含んでいる。
　基板載置部であるコンベア５３はベルト５２の上面に複数の基板１０を載置している。コンベア５３は左右（－Ｘ方向，＋Ｘ方向）両端に設けられた搬送用の一対のローラ５１と、一対のローラ５１に架け渡された無端状の搬送用のベルト５２とを備えている。
　コンベア５３は、一対のローラ５１の回転駆動によって、上方側（＋Ｚ方向側）のベルト５２を搬送方向（Ｘ方向）に沿って移動させることができる。
　コンベア５３の一対のローラ５１は成膜室６Ａ外に設けられ、ベルト５２は中央部が成膜室６Ａ内に設けられ、成膜室６Ａの左右（－Ｘ方向，＋Ｘ方向）側面の一部に設けられる一対の開口部６３を介して成膜室６Ａの内部と外部との間を移動することができる。
　薄膜形成ノズル１、コンベア５３の一部、コンベア５３のベルト５２の上面に載置された複数の基板１０及び赤外光照射器２は成膜室６Ａ内に収納される。
　成膜室６Ａは上部容器６１、下部容器６２及び一対の開口部６３により構成される。Ｚ方向である高さ方向において上部容器６１と下部容器６２との間に一対の開口部６３が位置する。したがって、成膜室６Ａ内の開口部６３，６３間に設けられるコンベア５３は下部容器６２より高く、上部容器６１より低い位置に配置される。
　加熱機構である赤外光照射器２は下部容器６２内のコンベア５３から離れた位置に、図示しない固定手段より固定される。
　なお、赤外光照射器２は、成膜室６Ａ内のベルト５２の上面と平面視して重複する位置に配置される。
　赤外光照射器２はランプ載置台２１及び複数の赤外光ランプ２２から構成され、ランプ載置台２１の上部に複数の赤外光ランプ２２が取り付けられる。したがって、赤外光照射器２は複数の赤外光ランプ２２から上方（＋Ｚ方向）に向けて赤外光を照射することができる。赤外光照射器２による上述した赤外光照射によってベルト５２の上面に載置した複数の基板１０に対する加熱処理を実行することができる。
　ミスト噴射部である薄膜形成ノズル１は上部容器６１内に図示しない固定手段により固定配置される。この際、薄膜形成ノズル１は、噴射面１Ｓとベルト５２の上面とが対向する位置関係で配置される。
　薄膜形成ノズル１は噴射面１Ｓに設けられた噴射口から下方（－Ｚ方向）に原料ミストＭＴを噴射するミスト噴射処理を実行する。なお、原料ミストＭＴは原料溶液をミスト化して得られるミストであり、薄膜形成ノズル１によって原料ミストＭＴを大気中に噴射することができる。
　成膜室６Ａは、成膜処理を行う際、エアカーテン７により上部容器６１，下部容器６２間の開口部６３を塞ぐことにより、薄膜形成ノズル１、ベルト５２上に載置された複数の基板１０及び赤外光照射器２を外部から遮断することができる。
　したがって、実施の形態１の成膜装置１１は、エアカーテン７によって成膜室６Ａの一対の開口部６３を閉状態にし、コンベア５３のベルト５２を搬送方向（Ｘ方向）に沿って移動させて成膜環境を設定することができる。
　そして、成膜装置１１は、上記成膜環境下で、赤外光照射器２の赤外光照射による加熱処理と、薄膜形成ノズル１によるミスト噴射処理とを同時に実行することにより、成膜室６Ａ内においてベルト５２の上面に載置された基板１０上に薄膜を成膜している。
　このように、実施の形態１の成膜装置１１は、基板載置部であるコンベア５３から離れて設けられ、赤外光ランプ２２から赤外光を照射して複数の基板１０を直接加熱する加熱処理を実行する赤外光照射器２を加熱機構として備えている。
　したがって、実施の形態１の成膜装置１１は、基板１０と接触関係をもたせることなく、赤外光照射器２によって基板１０を直接加熱することができるため、基板１０の形状に関わらず均一な加熱を、基板１０を変形させることなく行うことができる。
　その結果、実施の形態１の成膜装置１１は、成膜品質や成膜速度を落とすことなく、低コストで基板１０上に薄膜を成膜することができる。
　さらに、実施の形態１の成膜装置１１は、加熱機構である赤外光照射器２を成膜室６Ａ内に設けることにより、成膜室６Ａを介することなく、赤外光を基板１０に照射することができる分、赤外光の照射効率を高めることができる。
　なお、コンベア５３の下方（－Ｚ方向）に位置する赤外光照射器２からの赤外光の照射は、上方（＋Ｚ方向）に向けて行われているため、赤外光はコンベア５３のベルト５２（上方側及び下方側）を介して複数の基板１０に照射されることになる。
　この点を考慮して、ベルト５２を一対の線状のコンベアチェーンの組合せにより構成し、赤外光通過用の開口部分が存在する構造にする第１の対応と、赤外光を吸収することなく、赤外光の透過性に優れた赤外光透過材料をベルト５２の構成材料とする第２の対応が考えられる。
　したがって、ベルト５２に関し、上記第１及び第２の対応のうち少なくとも一つの対応を採用することにより、ベルト５２による赤外光の吸収度合を必要最小限に抑えることができる。
　第２の対応の具体例を以下に述べる。赤外光透過材料として、例えば、ゲルマニウム、シリコン、硫化亜鉛、セレン化亜鉛などが考えられる。ただし、ベルト５２として使用するための強度を満足する必要がある。
　また、赤外光照射器２から照射される赤外光の波長は、原料ミストＭＴの吸収波長域を避けて設定する第１の変形例を採用することが望ましい。第１の変形例を実現する具体的設定として、赤外光照射器２から照射される赤外光の波長を７００～９００ｎｍの範囲に設定することが考えられる。上記具体的設定により、想定される溶媒を用いた原料ミストＭＴの吸収波長域を避けることができるからである。
　上記具体的設定の通り、赤外光照射器２から照射される赤外光の波長を７００～９００ｎｍの範囲に設定すれば、成膜原料溶液の溶媒が水あるいはトルエンの場合、原料ミストＭＴの吸収波長域以外になることは既知の事実として確認されている。
　成膜装置１１は上記第１の変形例を採用することにより、原料ミストＭＴが赤外光照射器２から照射される赤外光を吸収し、原料ミストＭＴが加熱されて蒸発するという、原料ミスト蒸発現象の発生を回避することができるという効果を奏する。
　特に、第１の変形例として赤外光の波長を７００～９００ｎｍに設定するという上記具体的設定を採用することにより、想定される全ての原料の原料ミストＭＴに対して上記原料ミスト蒸発現象の発生を回避することができる効果を奏する。
　＜実施の形態２＞
　図２はこの発明の実施の形態２である成膜装置の概略構成を示す説明図である。図２にＸＹＺ直交座標系を記す。
　図２に示すように、実施の形態２の成膜装置１２は、成膜室６Ｂ、薄膜形成ノズル１、赤外光照射器２及びコンベア５３を主要構成要素として含んでいる。
　以下、実施の形態１の成膜装置１１と共通する構成部は、同一符号を付して説明を適宜省略し、実施の形態２の成膜装置１２の特徴箇所を中心に説明する。
　薄膜形成ノズル１、コンベア５３の一部、及びコンベア５３のベルト５２の上面に載置された複数の基板１０は成膜室６Ｂに収納される。成膜室６Ｂは上部容器６１、下部容器６２Ｂ及び一対の開口部６３により構成され、一対の開口部６３は成膜室６Ｂの左右側面の一部に設けられる。なお、Ｚ方向である高さ方向において上部容器６１と下部容器６２Ｂとの間に一対の開口部６３が位置する。
　成膜室６Ｂは赤外光照射器２から照射される赤外光を吸収することなく、透過性に優れた赤外光透過材料を構成材料としている。具体的には、成膜室６Ｂは構成材料として石英ガラスを採用している。
　加熱機構である赤外光照射器２は下部容器６２Ｂ外の下方（－Ｚ方向）に、コンベア５３から離れた位置に、図示しない固定手段より固定される。
　なお、赤外光照射器２は、成膜室６Ｂ内のベルト５２の上面と平面視して重複する位置に配置される。
　赤外光照射器２は複数の赤外光ランプ２２から赤外光を上方にむけて照射することによって、下部容器６２Ｂ及びベルト５２を介してベルト５２の上面に載置した複数の基板１０に対する加熱処理を実行することができる。
　成膜室６Ｂは、成膜処理を行う際、エアカーテン７により上部容器６１，下部容器６２Ｂ間の開口部６３を塞ぐことにより、薄膜形成ノズル１、及びベルト５２上に載置された複数の基板１０を外部から遮断することができる。
　したがって、実施の形態２の成膜装置１２は、エアカーテン７によって成膜室６Ｂの一対の開口部６３を閉状態にし、コンベア５３のベルト５２を搬送方向（Ｘ方向）に移動させることにより、成膜環境を設定することができる。
　そして、成膜装置１２は、上記成膜環境下で、赤外光照射器２の赤外光照射による加熱処理と、薄膜形成ノズル１によるミスト噴射処理とを同時に実行することにより、成膜室６Ｂ内においてベルト５２の上面に載置された基板１０上に薄膜を成膜している。
　このように、実施の形態２の成膜装置１２は、基板載置部であるベルト５２から離れて設けられ、赤外光ランプ２２から赤外光を照射して複数の基板１０を加熱する加熱処理を実行する赤外光照射器２を加熱機構として備えている。
　したがって、実施の形態２の成膜装置１２は、実施の形態１と同様、基板１０と接触関係をもたせることなく、赤外光照射器２によって基板１０を加熱することができるため、基板１０の形状に関わらず均一な加熱を、基板１０を変形させることなく行うことができる。
　その結果、実施の形態２の成膜装置１２は、実施の形態１と同様、成膜品質や成膜速度を落とすことなく、低コストで基板１０上に薄膜を成膜することができる。
　さらに、実施の形態２の成膜装置１２は、赤外光照射器２を成膜室６Ｂ外に設けることにより、赤外光ランプ２２の取り換え等、赤外光照射器２のメンテナンスの簡略化を図ることができる。
　加えて、実施の形態２の成膜装置１２の成膜室６Ｂは、赤外光ランプ２２から照射される赤外光の透過性に優れた赤外光透過材料である石英ガラスを構成材料としているため、成膜室６Ｂの下部容器６２の底面を介して基板１０を加熱する際の下部容器６２の底面による赤外光の吸収度合を必要最小限に抑えることができる効果を奏する。
　なお、成膜室６Ｂのうち、少なくとも下部容器６２Ｂの底面の構成材料を赤外光透過材料である石英ガラスにすれば上記効果を発揮することができる。
　また、赤外光透過材料として、石英ガラス以外に例えば以下の材料が考えられる。ホウケイ酸ガラス、サファイア、フッ化カルシウム、フッ化バリウム、フッ化マグネシウム、フッ化リチウムなどが近赤外光に対する透過率が高いため、石英ガラス以外の赤外光透過材料として考えられる。すなわち、成膜室６Ｂの構成材料は、石英ガラス、ホウケイ酸ガラス、サファイア、フッ化カルシウム、フッ化バリウム、フッ化マグネシウム、及びフッ化リチウムのうち、少なくとも一つを含めば良い。
　なお、実施の形態２の成膜装置１２においても、実施の形態１と同様、ベルト５２による赤外光吸収に関する上記第１及び第２の対応のうち少なくとも一つの対応を採用しても良い。
　さらに、実施の形態２の成膜装置１２において、実施の形態１と同様、赤外光照射器２から照射する赤外光の波長に関し、上記第１の変形例（実施の形態１で述べた具体的設定を含む）を採用しても良い。
　なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略したりすることが可能である。
　この発明は詳細に説明されたが、上記した説明は、すべての局面において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。
　１　薄膜形成ノズル
　２　赤外光照射器
　１１，１２　成膜装置
　２１　ランプ載置台
　２２　赤外光ランプ
　６Ａ，６Ｂ　成膜室
　５１　ローラ
　５２　ベルト
　５３　コンベア
　６１　上部容器
　６２，６２Ｂ　下部容器
　６３　開口部

Claims (4)

  1. 　基板（１０）を載置する基板載置部（５３）と、
    　前記基板載置部と離れて設けられ、赤外光ランプ（２２）を有し、前記赤外光ランプから赤外光を照射して前記基板を加熱する加熱処理を実行する加熱機構（２）と、
    　原料溶液をミスト化して得られる原料ミスト（ＭＴ）を前記基板の表面に噴射するミスト噴射処理を実行するミスト噴射部（１）とを備え、
    　前記加熱機構による前記加熱処理と前記ミスト噴射部による前記ミスト噴射処理とを同時に実行することにより、前記基板の表面に薄膜を成膜することを特徴とする、
    成膜装置。
  2. 　請求項１記載の成膜装置であって、
    　前記基板、前記加熱機構及び前記ミスト噴射部を内部に収容する成膜室（６Ａ）をさらに備える、
    成膜装置。
  3. 　請求項１記載の成膜装置であって、
    　前記基板及び前記ミスト噴射部を内部に収容する成膜室（６Ｂ）をさらに備え、
    　前記加熱機構は前記成膜室外に配置され、前記成膜室を介して前記加熱処理を実行し、
    　前記成膜室は、前記加熱機構の前記赤外光ランプから照射される赤外光に対し、透過性に優れた赤外光透過材料を構成材料とする、
    成膜装置。
  4. 　請求項３記載の成膜装置であって、
    　前記赤外光透過材料は石英ガラス、ホウケイ酸ガラス、サファイア、フッ化カルシウム、フッ化バリウム、フッ化マグネシウム、及びフッ化リチウムのうち、少なくとも一つを含む、
    成膜装置。
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