WO2019223355A1 - Pecvd reaction furnace having additional heat source therein and control method therefor - Google Patents

Pecvd reaction furnace having additional heat source therein and control method therefor Download PDF

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WO2019223355A1
WO2019223355A1 PCT/CN2019/072724 CN2019072724W WO2019223355A1 WO 2019223355 A1 WO2019223355 A1 WO 2019223355A1 CN 2019072724 W CN2019072724 W CN 2019072724W WO 2019223355 A1 WO2019223355 A1 WO 2019223355A1
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furnace
temperature
heating device
reaction
heating
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PCT/CN2019/072724
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French (fr)
Chinese (zh)
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王晨光
余仲
张勇
王凯
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深圳市捷佳伟创新能源装备股份有限公司
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Publication of WO2019223355A1 publication Critical patent/WO2019223355A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to solar cell manufacturing equipment, and in particular, to a PECVD reactor with a new heat source added to the reactor and a control method thereof.
  • Solar energy is an inexhaustible renewable energy source for human beings. Its unique full cleanliness, absolute safety, and relative extensiveness have an important influence in long-term energy strategies.
  • photovoltaic applications after the source silicon wafer is processed by special equipment, it becomes a solar cell that can directly convert solar energy into electricity. Among them, it is very important to add an anti-reflection coating on the surface of the silicon wafer in the solar cell manufacturing process.
  • the PECVD reactor is the main equipment for coating antireflection films. Its working principle is to make antireflection films using plasma enhanced chemical vapor deposition. The stable temperature control of the equipment has a decisive influence on the quality of the antireflection film and the equipment capacity.
  • the basic process of making an antireflection film by PECVD equipment is: put the silicon wafer to be reacted and the carrier (graphite boat) into the reaction chamber, wait for the ambient temperature to reach the set value, perform the antireflection film, and make the antireflection film.
  • the silicon wafer and carrier are sent out of the reaction chamber, and then another set of unreacted silicon wafers and carriers are placed in the reaction chamber for a new round of production.
  • Existing PECVD equipment processes the silicon wafer carrier (graphite boat) and silicon wafer in the reaction chamber by a furnace wire heating method after preheating to a temperature set value.
  • the invention aims to solve the problems of slow heating and long time in the prior art, and proposes a method for promptly returning the equipment by adding a heat source in a PECVD reaction furnace.
  • the technical solution proposed by the present invention is to add a heat source in the PECVD reaction furnace, which can be regarded as a PECVD reaction furnace with a new heat source in the furnace.
  • End covers and furnace doors at both ends, a furnace outer heating device surrounding the furnace outer wall, a furnace heating device placed in the furnace cavity, and a temperature control device for controlling the furnace heating device and the furnace heating device.
  • the heating device in the furnace may be an infrared heating tube.
  • the infrared heating tube is elongated and extends into the furnace cavity from the end cover.
  • a sealing member is provided between the infrared heating tube and the end cover, and a support device is provided between the infrared heating tube and the inner wall of the furnace body. .
  • infrared heating tube is parallel to the axis of the furnace body, and the infrared heating tube is installed at one or more of the bottom, top, and sides in the cavity of the furnace body.
  • a detection device for detecting whether the furnace door is opened is provided at the furnace door, and the detection device is connected to the temperature control device.
  • the furnace heating device may also be an electric furnace wire, and the electric furnace wire is wound on the inner wall of the furnace body cavity.
  • the present invention also provides a method for controlling the temperature rise of the above-mentioned PECVD reaction furnace, which has the following steps: Step 1: heating the reaction furnace, the temperature control device controls the heating device inside the furnace and the heating device outside the furnace to heat together, and quickly heats the reaction furnace The internal temperature is stable to the set temperature. Step 2. Open the furnace door. The temperature control device controls the heating device in the furnace to stop heating and send the boat containing the silicon wafer to be processed into the reaction furnace. Step 3. Close the furnace door and temperature control. The device controls the heating device in the furnace and the heating device outside the furnace to heat up the temperature in the reaction furnace to a predetermined temperature quickly.
  • Step four real-time monitoring of the temperature in the reaction furnace, and control the heating device inside and outside the boat containing the silicon wafer to be processed.
  • the body performs heat compensation to stabilize it at the set temperature.
  • Step 5 After the equipment is evacuated and leak-checked, various process gases are passed into the reaction furnace, and the heating device in the furnace is used to offset the temperature drop caused by the process gas.
  • the boat body holding the silicon wafers to be processed is processed at a constant temperature; Step 6.
  • Step 6 At the end of the process, open the furnace door, and the temperature control device controls the furnace. Means heating was stopped, the wafer boat with the process has moved out of the reactor body, and then the new process to be loaded into the wafer boat within the reactor body, and the step III.
  • the temperature in the reaction furnace is monitored in real time, the temperature difference between the temperature in the furnace and the predetermined temperature is calculated, and the voltage applied to the heating device in the furnace is controlled according to the magnitude of the temperature difference.
  • the present invention is provided with two sets of heat sources inside and outside the reaction furnace, which makes the temperature in the reaction furnace rise quickly, shortens the waiting time for temperature rise, speeds up the process of the process, and increases the production capacity;
  • the temperature compensation is improved, and the thermal field of the entire process environment is improved.
  • FIG. 1 is a side view of a preferred embodiment of the present invention
  • FIG. 2 is a top view of a preferred embodiment of the present invention.
  • FIG. 3 is an end view of a preferred embodiment of the present invention.
  • Figure 4 is a view of an infrared heating tube.
  • the idea of the invention is to add a heating source in the reaction furnace, reduce the waiting time for reaching the reaction temperature in the reaction furnace, and at the same time perform heat compensation and precise temperature control on the middle part of the reaction furnace.
  • the invention discloses a PECVD reaction furnace with a newly added heat source in the furnace, which includes a tubular furnace body 1, end covers 2 and furnace doors 3 respectively located at two ends of the furnace body, and an external heating device surrounding the outer wall of the furnace. Furnace heating device placed in the cavity of the furnace body, and a temperature control device for controlling the heating device outside the furnace and the heating device inside the furnace.
  • the end cover 2 is fixedly connected to the furnace body 1, the furnace door 3 and the furnace body 1 are movably connected, and the silicon wafer to be reacted is Loaded in the boat body (referred to as the boat body in Figure 5), and sent into the furnace cavity from the open furnace door. Close the furnace door to form a closed cavity in the furnace cavity, and then evacuate the cavity, inject the process gas, Raise the temperature to the specified temperature before proceeding with the reaction.
  • the temperature control device performs temperature control on the heating device inside and outside the furnace.
  • the heating device in the furnace is an infrared heating tube 4.
  • the infrared heating tube 4 is in a long shape and extends into the furnace cavity from the end cover 2.
  • a sealing member (indicated by icon 6) is provided between the infrared heating tube and the end cover. Because the infrared heating tube is relatively long, a support device is provided between the infrared heating tube and the inner wall of the furnace body 1 (indicated by icon 7).
  • the infrared heating tube 4 has at least one and is parallel to the axis of the furnace body 1. In order to avoid the boat 5 loaded with silicon wafers, the infrared heating tube is installed at one or more of the bottom, top, and sides in the furnace cavity.
  • a detection device for detecting whether the furnace door is opened is provided at the furnace door 3, and the detection device transmits a signal of whether the furnace door is opened to the temperature control device.
  • the temperature control device controls the heating device in the furnace to stop heating.
  • the heating device in the furnace is an electric furnace wire, and the electric furnace wire is wound on the inner side wall of the furnace body cavity.
  • the heating device in the furnace is a quartz tube.
  • the present invention also discloses a control method of the PECVD reaction furnace. Referring to FIG. 1 and FIG. 2, the method has the following steps:
  • Step 1 The reaction furnace is heated.
  • the temperature control device controls the heating device inside the furnace and the outside heating device to heat up at the same time, and quickly raises the temperature inside the reaction furnace to a predetermined temperature. This method increases the temperature faster than using the outside heating device alone. To a predetermined temperature, and the temperature is more uniform everywhere.
  • Step 2 When the furnace door is opened, the temperature control device controls the heating device in the furnace to stop heating, and the boat body containing the silicon wafer to be processed is sent into the reaction furnace; a detection device for detecting whether the furnace door is open is provided at the furnace door 3 The detection device transmits a signal of whether the furnace door is opened to the temperature control device. When the furnace door is opened, the temperature control device controls the heating device in the furnace to stop heating. This reduces heat leakage.
  • Step 3 The furnace door is closed, and the temperature control device controls the heating device in the furnace and the heating device to heat the furnace cavity and the boat body together to quickly raise the temperature in the reaction furnace to a predetermined temperature; the heating time can be saved and the equipment single process can be shortened. Cycle, thereby increasing equipment productivity.
  • Step 4 After the temperature in the furnace rises to a predetermined temperature, stop the heating device outside the furnace, evacuate the reaction furnace, monitor the temperature in the reaction furnace in real time, and control the heating device in the furnace to perform heat compensation for the boat body containing the silicon wafer to be processed.
  • Step 5 Introduce various process gases into the reaction furnace, use the heating device in the furnace to offset the temperature drop caused by the process gas, and perform constant temperature control on the boat body containing the silicon wafer to be processed; the constant temperature control is performed when the temperature in the furnace is low
  • the heating device in the furnace is started at a predetermined temperature, and the heating device in the furnace is stopped when the temperature in the furnace is higher than the predetermined temperature.
  • Step 6 At the end of the process, open the furnace door, the temperature control device controls the heating device in the furnace to stop heating, remove the boat containing the processed silicon wafer from the reaction furnace, and then send the boat containing the silicon wafer to be processed into the reaction furnace Inside, then go to step three.
  • the temperature in the reaction furnace is monitored in real time, the temperature difference between the temperature in the furnace and the predetermined temperature is calculated, and the voltage applied to the heating device in the furnace is controlled according to the size of the temperature difference; when the temperature difference is large, the furnace The voltage on the internal heating device is relatively large. When the temperature difference is small, the voltage on the heating device is relatively small. When the temperature difference is negative (that is, the temperature in the furnace exceeds a predetermined temperature), the The voltage is zero and the heating device in the furnace stops heating. In this way, accurate constant temperature control of the temperature in the furnace is achieved.

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Abstract

A PECVD reaction furnace having an additional heat source therein and a control method therefor, the reaction furnace comprising: a tubular furnace body (1), an end cover (2) and a furnace door (3) which are arranged at the two ends of the furnace body (1) respectively, an out-of-furnace heating device which surrounds the outer wall of the furnace body (1), an in-furnace heating device located inside of a cavity of the furnace body (1), and a temperature control device for controlling the out-of-furnace heating device and the in-furnace heating device. Two sets of heat sources are provided inside and outside of the reaction furnace, so that the temperature in the reaction furnace is rapidly increased, the waiting time for temperature increase is shortened, the processing progress is accelerated, and the productivity is improved. Meanwhile, temperature compensation is carried out on the center of the reaction furnace, so that the processing environment is improved.

Description

一种炉内新增热源的PECVD反应炉及其控制方法PECVD reaction furnace with newly added heat source in furnace and control method thereof 技术领域Technical field
本发明涉及太阳能电池片制造设备，尤其涉及一种在反应炉内增加新热源的PECVD反应炉及其控制方法。The invention relates to solar cell manufacturing equipment, and in particular, to a PECVD reactor with a new heat source added to the reactor and a control method thereof.
背景技术Background technique
太阳能作为人类取之不尽用之不竭的可再生能源，其特有的充分清洁性，绝对安全性，相对的广泛性，在长期的能源战略中具有重要的影响地位。在光伏应用中，源硅片通过特殊设备进行工艺制作后就变成了可将太阳能直接转换成电能的太阳能电池片，其中在硅片表面加镀减反射膜是太阳能电池制造过程中非常重要的一环，PECVD反应炉是镀减反射膜的主要设备，其工作原理是利用等离子增强化学气相沉积法进行减反射膜制作。而设备稳定的温度控制对制作减反射膜的质量及设备产能起到决定性影响。Solar energy is an inexhaustible renewable energy source for human beings. Its unique full cleanliness, absolute safety, and relative extensiveness have an important influence in long-term energy strategies. In photovoltaic applications, after the source silicon wafer is processed by special equipment, it becomes a solar cell that can directly convert solar energy into electricity. Among them, it is very important to add an anti-reflection coating on the surface of the silicon wafer in the solar cell manufacturing process. For one thing, the PECVD reactor is the main equipment for coating antireflection films. Its working principle is to make antireflection films using plasma enhanced chemical vapor deposition. The stable temperature control of the equipment has a decisive influence on the quality of the antireflection film and the equipment capacity.
PECVD设备制作减反射膜的基本流程是：将待反应的硅片及载具(石墨舟)放入反应腔，待环境温度达到设定值，进行减反射膜制作，将制作好减反射膜的硅片及载具送出反应腔，之后再将另一组未反应的硅片及载具放入反应腔进行新一轮的制作。现有PECVD设备是通过炉丝加热方式，将反应腔内的硅片载具(石墨舟)及硅片进行预热达到温度设定值后进行工艺的。在完成一次工艺后，进行新一轮工艺时，由于要打开反应腔(导致热量外溢)及放入新的冷源(待工艺石墨舟及硅片)所以要想让反应腔内温度重新达到设定值，就需要等待较长时间13～15min，整个工艺时间一般都控制在32min以内，因此整个回温时间严重制约设备的生产效率。The basic process of making an antireflection film by PECVD equipment is: put the silicon wafer to be reacted and the carrier (graphite boat) into the reaction chamber, wait for the ambient temperature to reach the set value, perform the antireflection film, and make the antireflection film. The silicon wafer and carrier are sent out of the reaction chamber, and then another set of unreacted silicon wafers and carriers are placed in the reaction chamber for a new round of production. Existing PECVD equipment processes the silicon wafer carrier (graphite boat) and silicon wafer in the reaction chamber by a furnace wire heating method after preheating to a temperature set value. After completing a process, when a new round of process is performed, because the reaction chamber must be opened (causing heat overflow) and a new cold source (graphite boat and silicon wafer to be processed) is placed, the temperature in the reaction chamber must be set to the set temperature again. Setting the value, you need to wait for a long time of 13-15 minutes, and the entire process time is generally controlled within 32 minutes, so the entire temperature recovery time severely restricts the production efficiency of the equipment.
为提升PECVD反应炉产能，完成不同工艺的温度要求，业内亟需开发一种能缩短PECVD反应炉工艺周期的新方法。In order to increase the capacity of the PECVD reactor and complete the temperature requirements of different processes, the industry urgently needs to develop a new method that can shorten the process cycle of the PECVD reactor.
发明内容Summary of the Invention
本发明是要解决现有技术加热缓慢，时间长的问题，提出一种PECVD反应炉内新增热源促使设备快速回温的方法。The invention aims to solve the problems of slow heating and long time in the prior art, and proposes a method for promptly returning the equipment by adding a heat source in a PECVD reaction furnace.
为解决上述技术问题，本发明提出的技术方案是在PECVD反应炉内新增热源，其体现可视为一种炉内新增热源的PECVD反应炉：包括管状的炉体、分别设于炉体两端的端盖和炉门、围绕在炉体外壁上的炉外加热装置、置于炉体腔内的炉内加热装置、以及控制炉外加热装置和炉内加热装置的温控装置。In order to solve the above technical problems, the technical solution proposed by the present invention is to add a heat source in the PECVD reaction furnace, which can be regarded as a PECVD reaction furnace with a new heat source in the furnace. End covers and furnace doors at both ends, a furnace outer heating device surrounding the furnace outer wall, a furnace heating device placed in the furnace cavity, and a temperature control device for controlling the furnace heating device and the furnace heating device.
所述炉内加热装置可以为红外加热管。The heating device in the furnace may be an infrared heating tube.
所述红外加热管为长条状，由所述端盖处伸入炉体腔内，红外加热管与端盖之间设有密封构件，红外加热管与所述炉体内壁之间设有支撑装置。The infrared heating tube is elongated and extends into the furnace cavity from the end cover. A sealing member is provided between the infrared heating tube and the end cover, and a support device is provided between the infrared heating tube and the inner wall of the furnace body. .
所述红外加热管至少有一条、并且与所述炉体的轴线平行，所述红外加热管安装在炉体腔内的底部、顶部、侧部中的一处或多处。There is at least one infrared heating tube and is parallel to the axis of the furnace body, and the infrared heating tube is installed at one or more of the bottom, top, and sides in the cavity of the furnace body.
所述炉门处设有检测炉门是否开启的检测装置，该检测装置连接所述温控装置。A detection device for detecting whether the furnace door is opened is provided at the furnace door, and the detection device is connected to the temperature control device.
所述炉内加热装置也可以为电炉丝，电炉丝缠绕在所述炉体腔内侧壁上。The furnace heating device may also be an electric furnace wire, and the electric furnace wire is wound on the inner wall of the furnace body cavity.
本发明还提出一种上述PECVD反应炉升温的控制方法，其具有以下步骤：步骤一、对反应炉进行加热，温控装置同时控制炉内加热装置和炉外加热装置一起加热，快速将反应炉内温度稳定到设定温度；步骤二、打开炉门，温控装置控制炉内加热装置停止加热，将装有待工艺硅片的舟体送入反应炉内；步骤三、关闭炉门，温控装置控制炉内加热装置和炉外加热装置一起加热，快速将反应炉内温度升到预定温度；步骤四、实时监控反应炉内温度，控制炉内、外加热装置对装有待工艺硅片的舟体进行热量补偿，使其稳定在设定温度；步骤五、对设备进行抽真空及检漏后，向反应炉内通入各种工艺气体，使用炉内加热装置加热抵消工艺气体引起的降温，保持有待工艺硅片的舟体在恒温状态下进行工艺；步骤六、工艺过程结束，打开炉门，温控装置控制炉内加热装置停止加热，将装有已工艺硅片的舟体移出反应炉，然后将新的装有待工艺硅片的舟体送入反应炉内，然后执行步骤三。The present invention also provides a method for controlling the temperature rise of the above-mentioned PECVD reaction furnace, which has the following steps: Step 1: heating the reaction furnace, the temperature control device controls the heating device inside the furnace and the heating device outside the furnace to heat together, and quickly heats the reaction furnace The internal temperature is stable to the set temperature. Step 2. Open the furnace door. The temperature control device controls the heating device in the furnace to stop heating and send the boat containing the silicon wafer to be processed into the reaction furnace. Step 3. Close the furnace door and temperature control. The device controls the heating device in the furnace and the heating device outside the furnace to heat up the temperature in the reaction furnace to a predetermined temperature quickly. Step four, real-time monitoring of the temperature in the reaction furnace, and control the heating device inside and outside the boat containing the silicon wafer to be processed. The body performs heat compensation to stabilize it at the set temperature. Step 5: After the equipment is evacuated and leak-checked, various process gases are passed into the reaction furnace, and the heating device in the furnace is used to offset the temperature drop caused by the process gas. The boat body holding the silicon wafers to be processed is processed at a constant temperature; Step 6. At the end of the process, open the furnace door, and the temperature control device controls the furnace. Means heating was stopped, the wafer boat with the process has moved out of the reactor body, and then the new process to be loaded into the wafer boat within the reactor body, and the step III.
所述步骤四中实时监测反应炉内温度，计算炉内温度与预定温度的温度差值，根据温度差值的大小相应的控制施加在炉内加热装置上的电压。In the fourth step, the temperature in the reaction furnace is monitored in real time, the temperature difference between the temperature in the furnace and the predetermined temperature is calculated, and the voltage applied to the heating device in the furnace is controlled according to the magnitude of the temperature difference.
与现有技术相比，本发明在反应炉的内外设有两套热源，使反应炉内升温迅速，缩短了升温等待时间，加快了工艺进程，提高了产能；同时能够直接对反应炉中心进行了温度补偿，改善了整个工艺环境热场。Compared with the prior art, the present invention is provided with two sets of heat sources inside and outside the reaction furnace, which makes the temperature in the reaction furnace rise quickly, shortens the waiting time for temperature rise, speeds up the process of the process, and increases the production capacity; The temperature compensation is improved, and the thermal field of the entire process environment is improved.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
下面结合附图和实施例对本发明作出详细的说明，其中：The present invention is described in detail below with reference to the drawings and embodiments, in which:
图1为本发明较佳实施例的侧视图；1 is a side view of a preferred embodiment of the present invention;
图2为本发明较佳实施例的俯视图；2 is a top view of a preferred embodiment of the present invention;
图3为本发明较佳实施例的端部视图；3 is an end view of a preferred embodiment of the present invention;
图4为红外加热管视图。Figure 4 is a view of an infrared heating tube.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明作进一步详细说明。应当理解，此处所描述的具体实施例仅仅用于解释本发明，并不用于限定本发明。In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.
本发明构思是在反应炉内新增加热源，减少反应炉内达到反应温度的等待时间，同时对反应炉中间部位进行热量补偿和精准温控。The idea of the invention is to add a heating source in the reaction furnace, reduce the waiting time for reaching the reaction temperature in the reaction furnace, and at the same time perform heat compensation and precise temperature control on the middle part of the reaction furnace.
本发明揭示了一种炉内新增热源的PECVD反应炉，其包括管状的炉体1、分别设于炉体两端的端盖2和炉门3、围绕在炉体外壁上的炉外加热装置、置于炉体腔内的炉内加热装置、以及控制炉外加热装置和炉内加热装置的温控装置。The invention discloses a PECVD reaction furnace with a newly added heat source in the furnace, which includes a tubular furnace body 1, end covers 2 and furnace doors 3 respectively located at two ends of the furnace body, and an external heating device surrounding the outer wall of the furnace. Furnace heating device placed in the cavity of the furnace body, and a temperature control device for controlling the heating device outside the furnace and the heating device inside the furnace.
结合图1至图3分别示出的PECVD反应炉的侧视图、俯视图、端部视图，端盖2与炉体1是固定连接，炉门3与炉体1是活动连接，待反应的硅片装载在舟体中(图标5所指为舟体)，由敞开的炉门处送入炉体腔内，关上炉门炉体腔内形成密闭的腔体，然后对腔体抽真空、灌注工艺气体、将温度升到指定温度然后再进行反应。温控装置对炉内、炉外加热装置实施温度控制。With reference to the side view, top view, and end view of the PECVD reaction furnace shown in FIGS. 1 to 3, the end cover 2 is fixedly connected to the furnace body 1, the furnace door 3 and the furnace body 1 are movably connected, and the silicon wafer to be reacted is Loaded in the boat body (referred to as the boat body in Figure 5), and sent into the furnace cavity from the open furnace door. Close the furnace door to form a closed cavity in the furnace cavity, and then evacuate the cavity, inject the process gas, Raise the temperature to the specified temperature before proceeding with the reaction. The temperature control device performs temperature control on the heating device inside and outside the furnace.
参看图4示出的较佳实施例，所述炉内加热装置为红外加热管4。所述红外加热管4为长条状，由所述端盖2处伸入炉体腔内，红外加热管与端盖之间设有密封构件(图标6所指)。由于红外加热管较长，故此在红外加热管与所述炉体1内壁之间设有支撑装置(图标7所指)。Referring to the preferred embodiment shown in FIG. 4, the heating device in the furnace is an infrared heating tube 4. The infrared heating tube 4 is in a long shape and extends into the furnace cavity from the end cover 2. A sealing member (indicated by icon 6) is provided between the infrared heating tube and the end cover. Because the infrared heating tube is relatively long, a support device is provided between the infrared heating tube and the inner wall of the furnace body 1 (indicated by icon 7).
参看图3，所述红外加热管4至少有一条、并且与所述炉体1的轴线平行。为避让装载硅片的舟体5，所述红外加热管安装在炉体腔内的底部、顶部、侧部中的一处或多处。Referring to FIG. 3, the infrared heating tube 4 has at least one and is parallel to the axis of the furnace body 1. In order to avoid the boat 5 loaded with silicon wafers, the infrared heating tube is installed at one or more of the bottom, top, and sides in the furnace cavity.
在较佳实施例中，所述炉门3处设有检测炉门是否开启的检测装置，该检测装置将炉门是否开启的信号传输给所述温控装置。当炉门开启时，温控装置控制炉内加热装置停止加热。In a preferred embodiment, a detection device for detecting whether the furnace door is opened is provided at the furnace door 3, and the detection device transmits a signal of whether the furnace door is opened to the temperature control device. When the furnace door is opened, the temperature control device controls the heating device in the furnace to stop heating.
在另一实施例中，所述炉内加热装置为电炉丝，电炉丝缠绕在所述炉体 腔内侧壁上。In another embodiment, the heating device in the furnace is an electric furnace wire, and the electric furnace wire is wound on the inner side wall of the furnace body cavity.
在其它实施例中，所述炉内加热装置为石英管。In other embodiments, the heating device in the furnace is a quartz tube.
本发明还揭示了所述PECVD反应炉的控制方法，参看图1和图2，其具有以下步骤：The present invention also discloses a control method of the PECVD reaction furnace. Referring to FIG. 1 and FIG. 2, the method has the following steps:
步骤一、对反应炉进行加热，温控装置同时控制炉内加热装置和炉外加热装置一起加热，快速将反应炉内温度升到预定温度；此方法比单纯使用炉外加热装置更快的升到预定温度，并且各处温度更均匀。Step 1: The reaction furnace is heated. The temperature control device controls the heating device inside the furnace and the outside heating device to heat up at the same time, and quickly raises the temperature inside the reaction furnace to a predetermined temperature. This method increases the temperature faster than using the outside heating device alone. To a predetermined temperature, and the temperature is more uniform everywhere.
步骤二、打开炉门的同时温控装置控制炉内加热装置停止加热，将装有待工艺硅片的舟体送入反应炉内；所述炉门3处设有检测炉门是否开启的检测装置，该检测装置将炉门是否开启的信号传输给所述温控装置。当炉门开启时，温控装置控制炉内加热装置停止加热。藉此减少热量外泄。Step 2: When the furnace door is opened, the temperature control device controls the heating device in the furnace to stop heating, and the boat body containing the silicon wafer to be processed is sent into the reaction furnace; a detection device for detecting whether the furnace door is open is provided at the furnace door 3 The detection device transmits a signal of whether the furnace door is opened to the temperature control device. When the furnace door is opened, the temperature control device controls the heating device in the furnace to stop heating. This reduces heat leakage.
步骤三、关闭炉门，温控装置控制炉内加热装置和炉外加热装置一起对炉腔内和舟体加热，快速将反应炉内温度升到预定温度；可节约升温时间，缩短设备单个工艺周期，从而提高设备产能。Step 3: The furnace door is closed, and the temperature control device controls the heating device in the furnace and the heating device to heat the furnace cavity and the boat body together to quickly raise the temperature in the reaction furnace to a predetermined temperature; the heating time can be saved and the equipment single process can be shortened. Cycle, thereby increasing equipment productivity.
步骤四、炉内温度升到预定温度后停止炉外加热装置，对反应炉抽真空，实时监测反应炉内温度，控制炉内加热装置对装有待工艺硅片的舟体进行热量补偿。Step 4: After the temperature in the furnace rises to a predetermined temperature, stop the heating device outside the furnace, evacuate the reaction furnace, monitor the temperature in the reaction furnace in real time, and control the heating device in the furnace to perform heat compensation for the boat body containing the silicon wafer to be processed.
步骤五、对反应炉内通入各种工艺气体，使用炉内加热装置加热抵消工艺气体引起的降温，对装有待工艺硅片的舟体进行恒温控制；所述恒温控制是当炉内温度低于预定温度时启动炉内加热装置，当炉内温度高于预定温度时停止炉内加热装置。Step 5: Introduce various process gases into the reaction furnace, use the heating device in the furnace to offset the temperature drop caused by the process gas, and perform constant temperature control on the boat body containing the silicon wafer to be processed; the constant temperature control is performed when the temperature in the furnace is low The heating device in the furnace is started at a predetermined temperature, and the heating device in the furnace is stopped when the temperature in the furnace is higher than the predetermined temperature.
步骤六、工艺过程结束，打开炉门，温控装置控制炉内加热装置停止加热，将装有已工艺硅片的舟体移出反应炉，然后将装有待工艺硅片的舟体送入反应炉内，然后执行步骤三。Step 6: At the end of the process, open the furnace door, the temperature control device controls the heating device in the furnace to stop heating, remove the boat containing the processed silicon wafer from the reaction furnace, and then send the boat containing the silicon wafer to be processed into the reaction furnace Inside, then go to step three.
所述步骤四中实时监测反应炉内温度，计算炉内温度与预定温度的温度差值，根据温度差值的大小相应的控制施加在炉内加热装置上的电压；温度差值大的时候炉内加热装置上的电压相应大些，温度差值小的时候炉内加热装置上的电压相应小些，当温度差值为负数时(即炉内温度超过预定温度)，炉内加热装置上的电压为零、炉内加热装置停止加热。藉此实现对炉内温度进行精准的恒温控制。In the fourth step, the temperature in the reaction furnace is monitored in real time, the temperature difference between the temperature in the furnace and the predetermined temperature is calculated, and the voltage applied to the heating device in the furnace is controlled according to the size of the temperature difference; when the temperature difference is large, the furnace The voltage on the internal heating device is relatively large. When the temperature difference is small, the voltage on the heating device is relatively small. When the temperature difference is negative (that is, the temperature in the furnace exceeds a predetermined temperature), the The voltage is zero and the heating device in the furnace stops heating. In this way, accurate constant temperature control of the temperature in the furnace is achieved.
以上实施例仅为举例说明，非起限制作用。任何未脱离本申请精神与范畴，而对其进行的等效修改或变更，均应包含于本申请的权利要求范围之中。The above embodiments are merely examples, and are not restrictive. Any equivalent modification or change made without departing from the spirit and scope of this application shall be included in the scope of claims of this application.

Claims (9)

  1. 一种炉内新增热源的PECVD反应炉，其特征在于：包括管状的炉体(1)、分别设于炉体两端的端盖(2)和炉门(3)、围绕在炉体外壁上的炉外加热装置、置于炉体腔内的炉内加热装置、以及控制炉外加热装置和炉内加热装置的温控装置。A PECVD reaction furnace with a newly added heat source in the furnace is characterized in that it includes a tubular furnace body (1), end covers (2) and furnace doors (3) respectively provided at both ends of the furnace body, and is surrounded on the outer wall of the furnace body. Heating device outside the furnace, heating device inside the furnace cavity, and temperature control device for controlling the heating device outside the furnace and the heating device inside the furnace.
  2. 如权利要求1所述的炉内新增热源的PECVD反应炉，其特征在于：所述炉内加热装置为红外加热管(4)。The PECVD reaction furnace with a new heat source in the furnace according to claim 1, characterized in that the heating device in the furnace is an infrared heating tube (4).
  3. 如权利要求2所述的炉内新增热源的PECVD反应炉，其特征在于：所述红外加热管(4)为长条状，由所述端盖(2)处伸入炉体腔内，红外加热管与端盖之间设有密封构件，红外加热管与所述炉体(1)内壁之间设有支撑装置。The PECVD reaction furnace with a newly added heat source in the furnace according to claim 2, characterized in that the infrared heating tube (4) is in a long shape and extends from the end cover (2) into the furnace body cavity. A sealing member is provided between the heating tube and the end cover, and a supporting device is provided between the infrared heating tube and the inner wall of the furnace body (1).
  4. 如权利要求3所述的炉内新增热源的PECVD反应炉，其特征在于：所述红外加热管(4)至少有一条、并且与所述炉体(1)的轴线平行，所述红外加热管安装在炉体腔内的底部、顶部、侧部中的一处或多处。The PECVD reactor with a new heat source in the furnace according to claim 3, characterized in that the infrared heating tube (4) has at least one and is parallel to the axis of the furnace body (1), and the infrared heating The tubes are installed in one or more of the bottom, top, and sides in the furnace cavity.
  5. 如权利要求4所述的炉内新增热源的PECVD反应炉，其特征在于：所述炉门(3)处设有检测炉门是否开启的检测装置，该检测装置连接所述温控装置。The PECVD reaction furnace with a new heat source in the furnace according to claim 4, characterized in that: a detection device for detecting whether the furnace door is opened is provided at the furnace door (3), and the detection device is connected to the temperature control device.
  6. 如权利要求1所述的炉内新增热源的PECVD反应炉，其特征在于：所述炉内加热装置为电炉丝，电炉丝缠绕在所述炉体腔内侧壁上。The PECVD reaction furnace with a new heat source in the furnace according to claim 1, wherein the furnace heating device is an electric furnace wire, and the electric furnace wire is wound on the inner wall of the furnace body cavity.
  7. 如权利要求1所述的炉内新增热源的PECVD反应炉，其特征在于：所述炉内加热装置为石英管。The PECVD reaction furnace with a newly added heat source in the furnace according to claim 1, wherein the heating device in the furnace is a quartz tube.
  8. 一种如权利要求1至7任一项所述的炉内新增热源的PECVD反应炉的控制方法，其特征在于具有以下步骤：A method for controlling a PECVD reactor with a newly added heat source in the furnace according to any one of claims 1 to 7, comprising the following steps:
    步骤一、对常温的反应炉进行加热，温控装置控制炉内加热装置和炉外加热装置一起加热，快速将反应炉内温度升到预定温度；Step 1: heating the reaction furnace at normal temperature, the temperature control device controls the heating device inside the furnace and the heating device outside the furnace to heat together, and quickly raises the temperature in the reaction furnace to a predetermined temperature;
    步骤二、打开炉门，温控装置控制炉内加热装置停止加热，将装有待工艺硅片的舟体送入反应炉内；Step 2: Open the furnace door, the temperature control device controls the heating device in the furnace to stop heating, and sends the boat body containing the silicon wafer to be processed into the reaction furnace;
    步骤三、关闭炉门，温控装置控制炉内加热装置和炉外加热装置一起加热，快速将反应炉内温度升到预定温度；Step 3: Close the furnace door, the temperature control device controls the heating device inside the furnace and the heating device outside the furnace to heat together, and quickly raises the temperature in the reaction furnace to a predetermined temperature;
    步骤四、炉内温度升到预定温度后停止炉外加热装置，对反应炉抽真空，实时监测反应炉内温度，控制炉内加热装置对装有待工艺硅片的舟体进行热量补偿；Step 4: After the temperature in the furnace rises to a predetermined temperature, stop the heating device outside the furnace, evacuate the reaction furnace, monitor the temperature in the reaction furnace in real time, and control the heating device in the furnace to perform thermal compensation for the boat body containing the silicon wafer to be processed;
    步骤五、对反应炉内通入各种工艺气体，使用炉内加热装置加热抵消工艺气体引起的降温，对装有待工艺硅片的舟体进行恒温控制；Step 5: Introduce a variety of process gases into the reaction furnace, use the heating device in the furnace to offset the temperature drop caused by the process gas, and perform constant temperature control on the boat body containing the silicon wafer to be processed;
    步骤六、工艺过程结束，打开炉门，温控装置控制炉内加热装置停止加热，将装有已工艺硅片的舟体移出反应炉，然后将装有待工艺硅片的舟体送入反应炉内，然后执行步骤三。Step 6: At the end of the process, open the furnace door, the temperature control device controls the heating device in the furnace to stop heating, remove the boat containing the processed silicon wafer from the reaction furnace, and then send the boat containing the silicon wafer to be processed into the reaction furnace. Inside, then go to step three.
  9. 如权利要求8所述的炉内新增热源的PECVD反应炉的控制方法，其特征在于：所述步骤四中实时监测反应炉内温度，计算炉内温度与预定温度的温度差值，根据温度差值的大小相应的控制施加在炉内加热装置上的电压。The method for controlling a PECVD reaction furnace with a newly added heat source in the furnace according to claim 8, characterized in that in the step 4, the temperature in the reaction furnace is monitored in real time, the temperature difference between the furnace temperature and a predetermined temperature is calculated, and the temperature is calculated according to the temperature. The magnitude of the difference controls the voltage applied to the heating device in the furnace accordingly.
PCT/CN2019/072724 2018-05-23 2019-01-22 Pecvd reaction furnace having additional heat source therein and control method therefor WO2019223355A1 (en)

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