WO2019203796A1

WO2019203796A1 - Method for generating features of a material; method for manufacturing a polarizer apparatus, polarizer apparatus, and display system having a polarizer apparatus

Info

Publication number: WO2019203796A1
Application number: PCT/US2018/027814
Authority: WO
Inventors: Robert Jan Visser; Kevin Cunningham
Original assignee: Applied Materials, Inc.
Priority date: 2018-04-16
Filing date: 2018-04-16
Publication date: 2019-10-24

Abstract

A method for manufacturing a patterned structure is described. The method includes forming a patterned resist structure having features; processing the patterned resist structure to form a first region of the patterned resist structure with a first surface energy and a second region of the patterned resist structure with a second surface energy different than the first surface energy; and depositing a feature material over the patterned resist structure having the first region and the second region to form the patterned structure of the feature material.

Description

METHOD FOR GENERATING FEATURES OF A MATERIAL; METHOD FOR MANUFACTURING A POLARIZER APPARATUS, POLARIZER APPARATUS, AND DISPLAY SYSTEM HAVING A POLARIZER APPARATUS

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to imprint lithography, particularly of imprint lithography for generating features of feature materials, e.g. conductive materials. Embodiments of the present disclosure further relate to a method for manufacturing a polarizer apparatus, a polarizer apparatus, and a display system having a polarizer apparatus. For example, a feature of conductive material can be a wire. Embodiments of the present disclosure particularly relate to a method tor manufacturing a patterned structure, a method of manufacturing a polarizer apparatus, a polarizer apparatus having a double pattern wire array and apparatuses and systems resulting therefrom.

BACKGROUND

[0902] Patterning of thin films is desired fix a plurality of applications, for example the manufacture of microelectronic devices, optoelectronic devices, or optical devices. Optical lithography techniques may be used for patterning thin films in a device. However, optical lithography techniques may be expensive and/or may reach limits particularly on substrates having larger sizes.

[0903] Particularly for rol!-to-roH processing, there is a limitation in the manufacture of small feature sizes using conventional techniques without the use of expensive photolithography. Printing techniques such as screen print, gravure, flexographic, Inkjet, etc., are for example limited to feature sizes, e.g. > 10 pm, which may not be sufficiently small.

[0004] In addition, shect-to-sheet processes can benefit from imprint lithography processes. Imprint lithography may provide for a comparably inexpensive process for patterning a thin film in order to provide a patterned structure in a device. [0005] As an example for optoelectronic devices, flat panel displays can be provided Flat panel displays Such as liquid crystal displays (LCDs), plasma displays (PDFs), and organic light emitting diode displays (OLED displays) have replaced cathode ray tubes (CRTs). The liqu id crystals of an LCD do not emit light and utilize a backlight unit to supply light through the liquid crystals. Optical polarizers are used for image generation. Optical polarizers may be absorptive. For example, more than 50% of die unpolarized light produced by die backlight of the LCD is absorbed by the first polarizer alone. Such arrangements essentially consume light, converting the energy into heat within die first polarizer and are therefore inefficient,

[0006] Wire grid polarizers, which are based cm transmission and reflection, have a higher utilization rate of the light generated by a backlight unit. Features of a wire grid polarizer can be provided as a wire. For example, electromagnetic waves having an electric field oriented orthogonal to die wires are transmitted through the polarizer. Light, having an electric field that is parallel to the wires, is reflected or, more precisely, radiated off of the wires. For covering the visible spectrum range, as for example utilized for displays, c.g. for an LCD, the feature sizes of the wire grid polarizer (WGP) are beneficially in a certain range.

[0007] Conductive features, i.e. features manufactured from a conductive material, may be utilized for electronic devices, microelectronic devices, optoelectronic devices, and optical devices.

[0008] An improvement for manufacturing features is beneficial.

SUMMARY

[0009] According to an embodiment a method for manufacturing a patterned structure is provided. The method includes forming a patterned resist structure having features; processing die patterned resist structure to form a first region of the patterned resist structure with a first surface energy and a second region of the patterned resist structure with a second surface energy different than the first surface energy; and depositing a feature material over the patterned resist structure having die first region and die second region to form the patterned structure of the feature material. [0010] According to another embodiment, a method of manufacturing a polarizer apparatus is provided. The method includes a method for manufacturing a patterned structure according to any of the embodiments of the present disclosure, wherein the features of the pattern resist structure are lines.

[0011] According to another embodiment, a polarizer apparatus manufactured with the method of manufacturing a polarizer apparatus structure according to any of the embodiments of the present disclosure is provided. The apparatus includes a wire array of optically reflective and electrically conductive lines with a top surface and two or more side surfaces, wherein the optically reflective and electrically conductive lines are electrically connected with each other.

[0012] According to another embodiment a display system is provided. The system includes a first polarizer apparatus according to embodiments of the present disclosure; a color filter disposed adjacent the first polarizer apparatus; a thin film transistor and liquid crystal layer disposed adjacent to the color filter; a second polarizer apparatus according to embodiments of the present disclosure, wherein the second polarizer apparatus is disposed adjacent to the thin film transistor and liquid crystal layer; and a backlight assembly comprising: a light source and a back reflector, wherein the backlight assembly is disposed adjacent to the second polarizer apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] So that the manner in which the above recited features can be understood in detail, a more particular description, briefly summarized above, may be hoi by reference to embodiments. The accompanying drawings relate to embodiments and are described in the following:

FIGS. 1 A to IE illustrate a process of imprint lithography of a thin film on the substrate according to embodiments of the present disclosure manufacturing a patterned structure;

FIGS. 2A to 2D illustrate a process of imprint lithography of a thin film mi the substrate according to embodiments of die present disclosure manufacturing a patterned structure; FIGS.3A to 3E illustrate a process of imprint lithography of a thin film on the substrate according to embodiments of the present disclosure manufacturing a patterned structure;

FIG. 4 is a schematic drawing of an apparatus for providing a pattern in a metal paste layer as used in embodiments described herein;

FIG. 5A shows an example of the principle of a wire grid polarizer;

FIG. 5B shows a wire grid polarizer according to embodiments described herein, wherein parameters for optical performance of the wire grid polarizers are illustrated;

FIG. 6 shows an example of an LCD system to illustrate embodiments of display systems according to embodiments described herein; and

FIG. 7 shows a flowchart illustrating methods fear manufacturing a polarizer apparatus according to embodiments described herein;

DETAILED DESCRIPTION OF EMBODIMENTS

[0014] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in the figures. Within die following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation and is not meant as a limitation. Further, features illustrated or described as part of one embodiment can be used on or in conjunction wife other embodiments to yield yet a further embodiment It is intended that the description includes such modifications and variations.

[0015] FIGS. 1A to E illustrate embodiments for manufacturing a patterned structure. According to embodiments described herein, the method includes imprinting a resist layer to form a patterned resist structure having features, processing the patterned resist structure to form first regions of the patterned resist structure with a first surface energy and second regions of die patterned resist structure with a second surface energy different than the first surface energy, and depositing a feature material, c.g. a conductive material, over tire pattemed resist structure having the first regions and file second regions to form the patterned structure of the feature material.

[0016] According to stone embodiments, the patterned structure can form exemplarily a polarizer apparatus according to embodiments described herein and as discussed in more detail below. The polarizer can typically be a wire grid polarizer, wherein a plurality of conductive lines form a wire array, i.e. the patterned structure forms a wire array.

[0017] In FIG; 1A, a resist layer 110 is provided over a substrate 100, The resist layer 110 can be patterned as shown in FIG. IB, wherein features 111 of a patterned resist structure 112 are formed. According to embodiments described herein, the features have a top surface and two or more side surfaces. The patterned resist structure 1 12 can be developed, cured, and/or hardened. The pattern features 114 of fee developed resist form e.g. a pattern of the patterned structure.

[0018] As shown in FIG. 1C, the patterned resist structure is processed. A coating 162 can be provided on top surfaces of the patterned resist structure. Accordingly, the substrate 100 and, for example, side surfaces of the patterned resist structure can provide a first region of the patterned resist structure. The first region can include one or more materials having a first surface energy. The coatings 162 can provide a second region of the patterned resist structure. The material of die coatings 162 can have a second surface energy different from the first surface energy.

[0019] According to embodiments described herein, which can be combined wife other embodiments described herein, the materia] of the coatings and/or the second surface energy can be selected to repel material provided in a further processing (see for example FIG. ID). For example, the material of the coatings and or the second surface energy can he selected to repel the liquid containing metal precursor, a conductive ink, a conductive paste, or another non-solid material, particularly a non-solid conductive material. Yet, liquid containing precursors, inks or pastes may also be non-conductive to form a pattern of the feature material. In the following reference is made to conductive features, which may beneficially be utilized for the manufacture of microelectronic devices, optoelectronic devices, or optical devices, such as for example wire grid polarizers. Embodiments for forming a patterned structure as described herein may alternatively also be used for non-conductive materials. particularly liquid containing materials, wherein a surface energy in a portion of a patterned resist structure is utilized to“repel” the feature material.

[0020] As exemplarily shown in FIG. 1 D, a non-solid conductive material is provided over the patterned resist structure having the coatings 162. For example, a liquid containing metal precursor can be coated on top of the patterned resist structure having the material with the second surface energy, i.e. die coatings 162. The material having the second surface energy repels the liquid containing metal precursor. Conductive features 172 are formed over the substrate 100. This process results in liquid in the“wells'’ as die liquid is repelled from die top of the structures.

[0021] According to different embodiments, which can be combined with other embodiments described herein, methods for coating a blanket layer including slot dye, meniscus coating, doctor blade, ink jet According to optional modifications, a remaining residual layer of the conductive material can be removed (not shown). An additional process can be employed to further reduce residuals of the conductive material. Far example, the conductive material, such as a liquid containing metal precursor, can be removed with a squeegee.

[0022] The liquid containing metal precursor can be cured. For example, die liquid containing metal precursors can be cured with heat or light. As exemplarily shown in FIG. IE titis may reduce the volume of die material. Metallic features 173 our provided at the bottom of the well of the patterned resist structure.

[<*123] According to yet further alternative embodiments, the resulting structure can. be etched. The structure can receive a light etch to remove residual material on top of the patterned resist structure. This etch might be a wet etch or a dry etch.

[0024] As illustrated with respect to FIG. ΓΕ, during curing, the volume of the conductive material may shrink. Accordingly, according to some embodiments, which can be combined with other embodiments described herein, processing as described with respect to FIGS. ID ami IE, and optionally including the residual removal and'or etching, may be repeated. For example, the portions of the process can be repeated more titan once to completely fill the features of the patterned resist structure. Additionally or alternatively, the metallic features 173 may further be thickened using the plating technique. For example, electroless deposition or electrochemical plating can be used to increase fee thickness of the metallic features 173.

[0025] According to yet further embodiments, which can be combined with other embodiments described herein, an Ink Jet technique can be utilized to deposit the non-solid conductive material, for example the liquid containing metal precursor, selectively across die substrate. This results in conductors in some areas and not others. (THE EMBODIMENTS HEREIN WOULD STILL HAVE A SECOND SURFACE ENERGY) For example, selectively providing the liquid containing metal precursor, for example a conductive ink, in different areas of the substrate may result in different thicknesses of the conductive features 172, and thus the metal region, for example the conductive features 173. For example, metal regions of different heights can be provided to have different optical properties.

[0026] As described herein, fix example with respect to FIG. 4, the resist layer 110 can be patterned with imprint lithography. The resist layer can be developed or cured thereafter. However, according to further embodiments, which ran be combined with other embodiments described herein, a patterned resist structure may also be formed by maskless lithography or other lithography processes, for example lithography processes utilizing a mask. For lithography processes other than imprint lithography, fee resist may be developed wife a mask or with another element forming a pattern and the patterned resist structure can be manufactured by removing undeveloped portions of the resist layer 110.

[0027] As shown in FIG. ID, conductive features 172 of a conductive material, such as a metal, can be provided over the patterned resist structure. According to some embodiments, which can be combined wife other embodiments described herein, the conductive material can be aluminum (Al), silver (Ag), gold (Au), chromium (Cr), copper (Cu), Nickel (Ni), alloys thereof, or similar conductive materials.

[0028] According to embodiments described in die present disclosure, imprint lithography may be in particular beneficial for R2R processes. R2R processes allow for a high productivity when depositing films, and manufacturing patterned films. For example, films, such as thin films, i.e. material layers having a thickness of a few nanometers to several tens of microns, can be deposited and patterned in a R2R process. The thin film can be provided on plastic substrates like PET, PEN, COP, PI, TAG (Triacetyl cellulose) and other similar substrates.

[0029] According to further embodiments of the present disclosure, depositing and patterning of thin films may also be applied for metal or thin glass substrates like Coming’s Willow Glass. For example, thin films can be manufactured in a shect-to-shect process. This may apply to glass substrates or plastic substrates adhered to a glass carrier. Further embodiments may be directed to metal substrates, organic substrates, glass composite substrates, e.g. used in printed circuit board (PCB) manufacturing, ABF (Ajinomoto build-up films), e.g. used in integrated circuit (IC) packaging, and other rigid substrates.

[0030] FIGS. 2A to 2D illustrate embodiments for manufacturing a patterned structure. According to embodiments described herein, the method includes imprinting a resist layer to form a patterned resist structure having features, processing the patterned resist structure to form first regions of the patterned resist structure with a first surface energy and second regions of the patterned resist structure with a second surface energy different than the first surface energy, and depositing a conductive material over the patterned resist structure having the first regions and die second regions forming the patterned structure of die conductive material.

[0031] In FIG. 2A, a resist layer 110 is provided over a substrate 100. The resist layer 110 can be patterned as shown in FIG. 2B, wherein features 111 of a patterned resist structure 112 are formed. According to embodiments described herein, the features have a top surface and two or more side surfaces. The patterned resist structure 112 can be developed, cured, and/or hardened. The pattern features 114 of the developed resist form, e.g., a pattern of the patterned structure.

[0032] According to embodiments of the present disclosure, a substrate is coated with imprint resist As shown in FIG. 2B, the resist is imprinted and cured resulting in a pattern on die surface of the substrate. According to some embodiments, a residual layer 311 can be maintained.

[0033 j An additional or alternative process to generate first regions having a first surface energy and second regions having a second surface energy different from the first surface energy ran be explained with respect to FIG. 2C. The top of the resist is treated by an anisotropic process. The process changes the surface energy. For example, a plasma process can be utilized to process the substrate. The plasma can be directed at the surface with the appropriate electric fields so that the ions inpact the substrate at substantially right angles. This results in the treatment of the surfaces mainly parallel with the surface of the substrate. Yet, there is no or essentially no treatment of vertical walls, i.e. walk that are perpendicular to the surface of the substrate. The plasma treatment may result in a hydrophobic surface. Accordingly, the top surfaces of the features 11 Ϊ can be treated by the anisotropic process, for example a plasma process. Further, the residual layer 311 can be treated by the anisotropic process, for example a plasma process.

[0034] As shown in FIG. 1C, the patterned resist structure is processed. The side walls can form regions with a first surface energy. The treated regions 262, i.e. regions forming the second region having the second surface energy, can be provided. The treated regions 262 can be provided at the top surfaces of the features 111 and on the residual layer 311. Accordingly, side surfaces of the patterned resist structure can provide a first region of the patterned resist structure. The second region can include the top surfaces and the residual layer having a first surface energy.

[0035] According to embodiments described herein, which can be combined with other embodiments described herein, the second surface energy can be selected to repel material provided in a further processing (see for example FIG. 2D). For example, the material after the anisotropic process and/or the second surface energy can be selected to repel the liquid containing metal precursor, a conductive ink, a conductive paste, or another non-solid material, particularly a non-solid conductive material.

[0036] As exemplarily shown in FIG. 2D, a non-solid conductive material is provided over the patterned resist structure having the treated regions 262. For example, a liquid containing metal precursor can be coated on top of the patterned resist structure having regions with the second surface energy, i.e. die treated regions 262. The material having the second surface energy repels the liquid containing metal precursor. Conductive features 273 are formed over the substrate 100. This process results in liquid at die side walls as it is repelled from the top of the structures and the treated residual layer. [0037] According to different embodiments, which can be combined with other embodiments described herein, methods for coating a blanket layer including slot dye, meniscus coating, doctor blade and ink jet. The properties of the ink can be selected so that the ink accumulates on the side walls of the features 114. For instance, if the treated surface is hydrophobic, e.g. highly hydrophobic, and the ink is aqueous, the ink will avoid the treated areas and accumulate on the side walls.

[0038] The structure is then heated or exposed to light to cure the liquid containing metal precursor, e.g. die ink. The liquid containing metal precursor can be cured. For example, the liquid containing metal precursors can be cured with heat or light.

[0039] According to optional modifications, a remaining residual layer of die conductive material can be removed (not shown). The structure may be processed with a light etch to remove cured ink that accumulates in unwanted areas. This etch might be wet or dry etch.

[0040] During curing, the volume of the ink material may shrink. It may be beneficial to repeal the deposition of the liquid containing metal precursor more than one to attain an optimal volume of material. The layers could be further thickened using plating, either electroless deposition or electrochemical plating.

[0041] As described herein, for example with respect to FIG. 4, the resist layer 110 can be patterned with imprint lithography. The resist layer can be developed or cured thereafter. However, according to further embodiments, which can be combined with other embodiments described herein, a patterned resist structure may also be formed by maskless lithography or other lithography processes, for example lithography processes utilizing a mask. For lithography processes other than imprint lithography, the resist may be developed with a mask or with another dement forming a pattern and the patterned resist structure can be manufactured by removing undeveloped portions of the resist layer 110.

[0042] As exemplarily shown in FIG. 2D, two conductive features 273 are formed at each patterned feature 114. Embodiments described herein, allow for a double pattern fabrication. Particularly, the patterned structure can be a polarizer apparatus. The features of the parent structures can he wires or conductive lines. The conductive lines forming a wire array can be doubled as compared to patterned resist structure 112, for example lines of a l ine array of the patterned resist structure. In light of the above, the pattern of the line array of the patterned resist structure can be mote easily manufactured. Accordingly, embodiments for manufacturing the patterned structure can be used to manufacture a polarizer apparatus as described with respect to FIGS. 5A, SB and 6.

[0043] FIGS. 3A to 3E illustrate yet further embodiments for manufacturing a patterned structure. As compared to FIGS. 2A to 2D, wherein mainly differences with respect to FIGS. 2 A to 2D are described, the residual layer 311 is removed before the surface treatment as shown in FIG. 3C. Details, features, aspects, and embodiments described with respect to FIGS. 2A to 2D can likewise be applied for the embodiments described with respect to FIGS. 3A to 3E.

[0044] According to embodiments of the present disclosure, which can be combined with other embodiments described herein, the residual layer 311 of die patterned resist structure can be removed, for example etched. The structure may be processed with a light etch to remove the residual resist material, i.e. the residual layer 311. This etch might be wet or dry etch.

[0045] Due to removal of the residual layer 311, die surface of the substrate 100 can be treated with die anisotropic process. The substrate surface can, tints, be provided with a substantially similar surface energy as die treated region 262 at the top surface of the patterned feature 114. A treated region 262 can be provided at die substrate surface. Removal of the residual layer 31 1 before treatment of the structure can avoid the removal process after the precision of the conductive material.

[0046] As described above, also embodiments illustrated with respect to FIGS. 3A. to 3 E can provide MI array of conductive lines as die parent conductive structure, particularly a double patterning structure wherein two conductive features are provided per patterned resist feature, for example imprinted resist feature. Accordingly, a polarizer apparatus can be manufactured more easily according to embodiments described herein.

[0047] Embodiments described herein may further include a selective material removal, wherein die patterned features 114, e.g. lines, of the patterned resist structure are removed from the layer structure. The selective material removal results in a structure, wherein remaining resist material is removed and the conductive features 273 (or conductive feature 173 in FIG. IE), for example conductive lines, remain on the substrate 100. The selective material removal can be provided as ashing or cleaning, such as plasma ashing. This may either be a high-temperature ashing (or stripping) process or a descum process, wherein the descum process is provided at lower temperatures.

[0048] According to some embodiments of the present disclosure, as exemp!arily described with respect to FIG. 4, a stamp for imprint lithography to generate a patterned resist structure (see e.g. 112 in FIG. B) can be a portion of an imprint roller or the stamp can be attached to a roller, wherein imprinting can be conducted in a roll-to-roll (R2R) process. For imprint lithography in an R2R process, a roller may rotate around the rotation axis and the substrate is moved over the surface of the rotor, for example a cylindrical surface. For example, the substrate transport velocity v can correspond to die angular velocity w of the roller;

[0049] According to some embodiments of die present disclosure, the imprint lithography process may also be a self-aligned imprint lithography (SAIL) process. For a SAIL process, i.e. a multi-level imprint lithography process, a recess in the stamp can have two or more features depths of different portions of the feature. This can be very efficient for generating a pattern in a thin film. Accordingly, a SAIL process includes a multi-level stamp. Manufacturing of lines such as connection lines with an imprint lithography process, e.g. a SAIL process, allows fra^* lines having a small width and small distances between the lines.

[0050] According to embodiments of die present disclosure and as exemplarily illustrated with respect to FIGS. 1 A and 1 B, a resist layer 1 10 is provided cm die substrate. The resist can be imprinted with a stamp 511, which forms the structure. The resist is cured, for example by light, such as UV light, heat The curing may be folly or partially be provided before the imprint stamp is separated or released from the substrate. For example, the curing may not be complete, but provide enough structural stability so that the imprinting stamp can release the paste without damaging the imprinted structures.

[0051 ] Further details of an imprint lithography process, for example SAIL process, which can additionally or alternatively be provided are shown exemplarily in FIG. 4. According to embodiments described herein, which can be combined with other embodiments described herein, the method of imprint lithography and the stamp for imprint lithography can be included and/or utilized in a roll-to-roll process (R2R process). An imprint station can include a roller 510, which can rotate «pond the axis 514 of the roller 510. FIG. 5 illustrates the rotation by arrow 512. Upon rotation of the roller 510, a pattern of a stamp 511 attached to the roller or being a portion of the roller is imprinted in a resist layer 110.

[0052] As shown in FIG. 4, the roller 510 has a stamp 511 provided thereon or being a portion of the roller. When the substrate 100 is moved through the gap between the roller 510 and, for example, another roller 502, a pattern of the stamp 511 is embossed in the resist layer 110. This results in the patterned layer 104. The arrow 503 indicates a rotation of the other roller 502 around the axis 504 of the other roller 502. The arrow 101 in FIG. 4 indicates the movement of foe substrate 100 through foe gap between foe roller 510 and foe roller 502. The rollers rotate as indicated by the arrows 512 and 503.

[0053] According to embodiments of the present disclosure, an R2R apparatus can be provided with imprint lithography, wherein imprint photography is conducted with a resist layer. FIG. 4 shows a deposition unit 544 for applying the resist onto or over the substrate 100. According to some embodiments of foe present disclosure, which can be combined with other embodiments of the present disclosure, the imprinted resist can be cured with curing unit 532. The curing unit 532 can be selected from foe group consisting of a light «mission unit and a heating unit configured for curing foe layer while imprinting the stamp in foe layer, wherein emission 533 is generated. For example, the light emission unit can emit UV light, particularly in the wavelength range from 410 nm to 190 nm. As another example, foe emission unit can emit IR light, particularly in the wavelength range from 9-11 micrometers (CO2 laser). As a further example, foe emission unit can emit broadband light from foe IR to the UV with emission particularly in the wavelength range from 3 micrometers to 250nm. This emission may be filtered to select only a portion of foe blackbody emission using optical filters.

[0054] According to yet further embodiments, which can be combined with other embodiments described herein, optionally also an optical measurement unit for evaluating the result of the substrate processing can be provided.

[0OS5J FIG. 4 shows a curing unit 532. The curing unit 532 is configured to partially or fully cure foe resist while the «amp is imprinted into the resist layer 110. According to embodiments of foe present disclosure, the degree of curing can be adjusted by the intensity of flu; curing unit, fin: example the light intensity car the heat emission intensity. Additionally or alternatively, die degree of curing can be adjusted by die rotational speed of the roller 510 and the substrate 100.

[0056] In the event of partial curing by the curing unit 532, a second curing unit 534 can be provided downstream of the curing unit 532, wherein second emission 535 is generated. The second curing unit 534 can fully cure the partially cured patterned layer.

[0057] As described above, a patterned structure can be manufactured according to embodiments described here. The patterned structure may, for example, be a wire array. Particularly, a double patterning method may be beneficial to manufacture a wire array of a wire grid polarizer. FIG. 5A shows a wire grid polarizer 10. The wire grid polarizer 10 includes a substrate 30. The wire grid polarizer 10 further includes conductive lines 20 forming a wire array. As shown in FIG. 1A, unpolarized tight 12, which is incident on the wire grid polarizer 10 is polarized. S-piane light 13 is reflected by the wire grid polarizer, whereas p-p!ane light 14 is transmitted through the wire grid polarizer.

[0058] FIG. SB illustrates embodiments of a wire grid polarizer 10. The conductive lines 20 form a wire array of the conductive lines. The conductive lines arc provided on a substrate 30, for example a glass substrate. According to some embodiments, which can be combined with other embodiments described herein, the substrate can be a transparent substrate. For example, the transparent substrate can be a glass substrate or a plastic substrate, such as a plastic substrates like PET, PEN, GOP, PI, TAG (Triacetyl cellulose) and other similar substrates.

[0059] According to some embodiments, the wire array can be defined by the pitch 22 of the wire array, the width 24 of the conductive lines, and/or the height 26 of tite conductive lines. The pitch (or period) is beneficially at least three times smaller than the smallest wavelengths to be polarized. According to some embodiments, which can be combined with other embodiments described herein, the pitch of the wire array can be 200 nm or «nailer. Further parameters considered for manufacturing a wire grid polarizer ran be the duty cycle or fill- factor, i.e. the width 24 of die conductive lines divided by the pitch 22 of the wire grid array, and/or die aspect ratio, i.e. the height 26 of the conductive 1 ines divided by die width 24 of the conductive lines.

[0060] Methods of manufacturing of wire grid polarizers according to embodiments described herein may utilize imprint lithography, maskless lithography, or lithography with a mask. Imprint lithography may be beneficial in order to reduce manufacturing costs, wherein features for manufacturing a wire array can be provided in a sheet-to-sheet process or a roll- to-ro!l process, such that wire grid arrays can be manufactured on large substrates, for example a large plastic substrate.

[0061] The method for the manufacture of a patterned structure utilizing regions having a first surface energy and regions having a second surface energy can be used to generate conductive patterns. For example, the conductive patterns can be a wire array of a wire grid polarizer. The resulting patterned resist structure may have a width of die lines of 40 nm to 100 nm, a space between the lines of 100 nm to 250 run, and a height of the lines of 150 nm or above, for example 150 nm to 300 nm. Accordingly, a resist pitch of the line array of the patterned resist structure can he 150 nm or above, for example 220 nm or above. As explained below, according to some embodiments described herein, the resist pitch of the line array of the patterned resist structure can be larger as compared to a wire pitch of the wire array of the conductive lines (double patterning method). For example, the wire pitch of the conductive lines can be 70% or less of die resist pitch of the line array of die patterned resist structure. In light thereof, lithography processes can be simplified and/or wire arrays with a pattern that is more difficult to manufacture can be generated by methods described herein. According to some embodiments, which can be combined with other embodiments described herein, the pitch or die average pitch, respectively, of the conductive tines is about 50% of die pitch of the line, since for each line two conductive tines are provided. According to some embodiments, die conductive lines form a wire array having a wire pitch of 30% to 70% of the resist pitch, i.e. die pitch of the lines of the patterned resist structure. It is understood that the wire pitch of the wire array can also be referred to as an average pitch, since the fabrication method may result in or allow for essentially two different distances between neighboring conductive line, even for a uniform distance between the lines of the patterned resist structure.

[0062 j According to some embodiments, which can be combined with other embodiments described herein, the conductive material can be aluminum having beneficial optical properties in the visible light spectrum for a sub- wavelength metallic grating. For example, die transmission and reflection efficiency for an aluminum wire grid polarizer may show a better uniformity ova- the visible wavelength range as compared to other materials, such as gold. [0063] According to yet further embodiments, the conductive material may further be covered with dielectric material, for example to form a passivation layer. According to yet further embodiments, which can be combined with other embodiments described herein, an etch step layer (not shown) may be provided before die deposition of the conductive material. The etch step layer can be a thin layer, for example to protect the resist and the substrate during subsequent processes of material removal.

[0064] The conductive material may have a thickness of 30 run or above, for example 40 nm to 100 nm. By varying the thickness of die conductive material, the duty cycle of the wire grid polarizer can be varied, which, in turn, varies the polarization efficiency of die wire grid polarizer. Additionally or alternatively, more than one layer of conductive material may be provided according to some embodiments.

[0065] As mentioned above, polarizers may be absorptive. Approximately 50% of the light produced by the backlight of an LCD is absorbed by the first polarizer (e.g., the polarizer between the backlight and the LGTFT layers), hi contrast, the polarizers of embodiments of the present disclosure are reflective. Photons with a polarization opposite to that of the reflective polarizer (that would normally be absorbed in an absorptive polarizer) are reflected back into a diffuser plate (hat may be between a backlight and a lower polarizer. Due to reflection, light recycling can repeat until most of or virtually all the light passes through the polarizer with the correc t polarization.

[0066] The reflective polarizers of embodiments of the present disclosure also provide shielding of the electromagnetic noise that these various circuits can generate. By using a conductive wire grid (e.g., including an array of parallel fine conductive wires) that is electrically grounded, for example with a grounding frame, the reflective polarizers provide a layer of electrical shielding between the circuits within the LCD that control LC orientation and other outside circuits, which can include, for example, touch sensors, pressure sensors, temperature sensors, light sensors, and other sensors, as well as the circuits that control the backlighting and other devices (e.g., haptic devices) proximate to the LC control circuitry. In some embodiments, the reflective and conductive polarizer can be surrounded by a conductive peripheral border connected to each wire wherein the peripheral border is grounded. [0067] Turning now to FIG. 6, a simplified example LCD system 600 according to embodiments of the present disclosure is depicted. The system 600 includes two glass substrates (e.g., upper glass substrate 602 and lower glass substrate 604) between two polarizers (e.g., upper polarizer 606 and lower polarizer 608). Between the glass substrates 602, 604, liquid crystals 610 are disposed below a color fiber that includes pixels 612 and thin film transistors (TFTs) 614 within a black matrix 616. A spacer 618 is used to support and separate the color filter and the upper glass substrate 602 from the lower glass substrate 604. A seal. 620 surrounds the liquid crystals 610. Light is provided by a backlight which can include LEDs or CCFL lamp tubes 622 that illuminate a back reflector 624 which passes the light through a light guide plate 626, a prism sheet 628, and the diffuser 630. In some embodiments, the LCD system 600 can include an alignment film 632 above the liquid crystals 610. A layer of row electrodes 634 below the liquid crystals 610 and a layer of column electrodes 636 above the liquid crystals 610 are also included. In some embodiments, the LCD system 600 can include an overcoat film 638 above die column electrodes 636.

[0068] As explained above, for embodiments described herein having a wire grid polarizer, light that would have been absorbed by a non-ief!cctive polarizer, is recycled by reflecting back any light that does not pass the lower polarizer 608. In addition, light that does not pass die upper polarizer 606 is reflected back by die upper polarizer 606 and recycled.

[0069] FIG. 7 shows a flowchart for illustrating a method for manufacturing a patterned structure. The method shows on box 702 forming a patterned resist structure having features. For example the patterned resist structure can be formed with an imprint process such as a SAIL process.

[0070] In box 704 the patterned resist structure is processed. Processing the pattern resist structure can, according to embodiments described herein, provide a first region of the patterned resist structure with a first surface energy and a second region of the patterned resist structure with a second surface energy different to that of the first surface energy. For example, the processing can be provided by coating a material over the patterned resist structure and/or by treating the patterned resist structure with an anisotropic process.

[0071] As indicated by box 706 a conductive material is deposited over die patterned resist structure having die first region and the second region to form the patterned structure of the conductive material. A non-solid conductive material is provided over the patterned resist structure having the different surface energies. For example, a liquid containing metal precursor can be coated on top of the patterned resist structure. The material having, e.g., the second surface energy repels die liquid containing metal precursor. Conductive features are formed over the substrate. This process results in liquid in“wells” or at side walls as the liquid is repelled from surface of, e.g., the second region.

[0072] As an optional further processing, as indicated by box 708, non-solid conductive material, such as a liquid containing metal precursor, can be cured or hardened to form conductive features In an optional further processing, residual conductive material may be removed before or after curing. E.g. material may be removed before curing with a squeegee. As another additional or alternative option residual conductive material may be removed with a light etch, e.g. after curing.

[0073] According to some embodiments of the present disclosure, the pattern features can be selected from die group consisting of: A line, a pole, a trench, a hole, a circle, a square, a rectangle, a triangle, other polygons, a pyramid, plateaus, and combinations or arrays thereof. Generally, the pattern features may include shapes, which are used in circuit fabrication. The features of a stamp of an imprint process can have corresponding geometries, wherein a protrusion corresponds to a recess and vice versa. The pattern features may comprise a mask for the fabrication of conducting lints in a circuit

[0074] According to some embodiments of die present disclosure, methods of patterning with imprint lithography can be utilized for the manufacture of wire grid polarizers, wherein, for example, tines are provided as the pattern feature. For example, tines can have a half pitch of 100 nm or below, for example 50 nm to 100 nm.

[0075] Embodiments of the present disclosure have several advantages including: Imprinting with imprint lithography, which allows, for example, for a double patterning method according to which two conductive features are formed per one patterned structure. Providing one or more regions with a first surface energy and one or more regions with a second surface energy may enable manufacturing of patterned structures of liquid containing materials, e.g. liquid containing conductive materials or inks. |0t)76} The present disclosure includes several advantages including providing a manufacturing method of a patterned structure, a polarizer apparatus, and/or a display system, wherein a pattern of features likes a line array of the patterned resist structure can be more easily manufactured.

[0077] While the foregoing is directed to some embodiments, other and further embodiments may be devised without departing from the basic scope, and die scope is determined by the claims that follow.

Claims

1. A method for manufacturing a patterned structure, the method comprising: forming a patterned resist structure having features; processing the patterned resist structure to form a first region of the patterned resist structure with a first surface energy and a second region of die patterned resist structure with a second surface energy different than the first surface energy; and depositing a feature material over the patterned resist structure having the first region and the second region to form the patterned structure of the feature material.

2. The method of claim 1 , wherein the features have a top surface and two or more side surfaces, and wherein the processing of the patterned resist structure comprises: coating die patterned resist structure at the top surfaces of the features with a material having the second surface energy.

3. The method of claim I , wherein Sic features have a top surface and two or more side surfaces, and wherein die processing of the patterned resist structure comprises: treating the top surfaces of the features with a process changing the surface energy.

4. The method of claim 3, wherein the process is an anisotropic process acting on the top surfaces of the features.

5. The method of any of claims 2 to 4, wherein top surfaces of the features are hydrophobic after processing the patterned resist structure.

6. The method of any of claims 2 to 4, wherein the depositing die feature material includes depositing a liquid containing metal precursor onto the patterned resist structure.

7. The method of claim 6, wherein the liquid containing metal precursor is deposited between features of the patterned resist structure.

8. The method of claim 6, wherein the liquid containing metal precursor is deposited on the two or more side surfaces of the features of the patterned resist structure.

9. The method of any of claims 6 to 8, further comprising: curing the liquid containing metal precursor.

10. The method of any of claims l to 9, wherein the patterned resist structure is formed by imprinting a resist layer.

I I. The method of claim 10, further comprising; removing residual resist layer remaining from the imprinting.

12. A method of manufacturing a polarizer apparatus, comprising: the method of any of claims 1 to 11, wherein the features of the pattern resist structure are lines.

13. A polarizer apparatus manufactured widi the method of claim 12, comprising: a wire array of optically reflective and electrically conductive lines with a top surface and two or mere side surfaces, wherein the optically reflective and electrically conductive lines are electrically connected with each other.

14. A display system comprising: a first polarizer apparatus according to claim 13; a color filter disposed adjacent the first polarizer apparatus; a thin film transistor and liquid crystal layer disposed adjacent to the color filter; a second polarizer apparatus according to claim 13, wherein the second polarizer apparatus is disposed adjacent to the thin film transistor and liquid crystal layer, and a backlight assembly comprising: a light source and a back reflector, wherein the backlight assembly is disposed adjacent to the second polarizer apparatus.

15. The system of claim 14 further comprising: one or more sensors disposed adjacent to the first polarizer apparatus.