WO2019181339A1 - Processing liquid supply device, substrate processing device, and processing liquid supply method - Google Patents

Processing liquid supply device, substrate processing device, and processing liquid supply method Download PDF

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Publication number
WO2019181339A1
WO2019181339A1 PCT/JP2019/006267 JP2019006267W WO2019181339A1 WO 2019181339 A1 WO2019181339 A1 WO 2019181339A1 JP 2019006267 W JP2019006267 W JP 2019006267W WO 2019181339 A1 WO2019181339 A1 WO 2019181339A1
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WO
WIPO (PCT)
Prior art keywords
processing liquid
processing
supply
supply pipe
drainage
Prior art date
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PCT/JP2019/006267
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French (fr)
Japanese (ja)
Inventor
憲太郎 徳利
田中　洋一
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
栗田工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス, 栗田工業株式会社 filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to CN201980015466.XA priority Critical patent/CN111788660A/en
Priority to KR1020207023419A priority patent/KR102404042B1/en
Publication of WO2019181339A1 publication Critical patent/WO2019181339A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
    • B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a processing liquid supply apparatus and a processing liquid supply method for supplying a processing liquid to a processing unit that processes a substrate to be processed.
  • substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, plasma display substrates, FED (Field-Emission-Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photo Substrates such as a mask substrate, a ceramic substrate, and a solar cell substrate are included.
  • a substrate processing apparatus that processes a substrate such as a semiconductor wafer with a processing liquid is used.
  • a single-wafer type substrate processing apparatus that processes substrates one by one includes, for example, a spin chuck that holds and rotates a substrate horizontally, and a processing liquid nozzle that discharges processing liquid toward the substrate held by the spin chuck
  • the main body unit is provided with a processing unit having In order to supply the processing liquid to the processing liquid nozzle, the substrate processing apparatus is provided with a processing liquid supply apparatus separately from the main body.
  • a processing liquid supply pipe extending from the processing liquid supply apparatus is connected to the processing liquid nozzle, and the processing liquid stored in the processing liquid tank of the processing liquid supply apparatus is supplied through the processing liquid supply pipe (for example, Patent Document 1).
  • the substrate is processed with a processing solution in which a predetermined gas is dissolved by a melting module.
  • a processing solution in which a predetermined gas is dissolved by a melting module.
  • a substrate is treated with a rinse liquid containing pure water as a main component
  • carbonated water obtained by dissolving carbon dioxide gas at a predetermined concentration in the pure water may be used (for example, Patent Document 2). Rinsing the substrate with carbonated water prevents the substrate from being charged.
  • JP 2006-351709 A Japanese Unexamined Patent Publication No. 2016-157895
  • an object of the present invention is to provide a technique capable of reducing the amount of particles in the treatment liquid that has passed through the dissolution module.
  • a first aspect is a processing liquid supply device for supplying a processing liquid, a melting module for dissolving a gas in a raw solution of the processing liquid, and one end thereof on the secondary side of the melting module
  • a primary side supply pipe connected, a filter connected to the other end of the primary side supply pipe and filtering the treatment liquid, and a treatment liquid which is connected to the secondary side of the filter and passed through the filter.
  • a secondary supply pipe that forms a flow path that passes therethrough; a drainage pipe that is connected to the primary supply pipe and that sends the processing liquid to a drainage section; and a primary supply pipe that is provided in the primary supply pipe.
  • a switching unit that switches between a state in which the module and the filter communicate with each other and a state in which the dissolution module and the drainage unit communicate with each other, and a primary side of the switching unit that passes through the primary supply pipe
  • the place to do Comprising a particle measurement unit that measures the amount of particles in the liquid, depending on the amount of particles measured by the particle measurement unit, and a control unit for controlling the switching operation by the switching unit.
  • a 2nd aspect is a processing liquid supply apparatus of a 1st aspect, Comprising: The said particle
  • a 3rd aspect is a processing liquid supply apparatus of the 1st aspect or the 2nd aspect, Comprising: The said switching part is interposed in the said primary side supply piping, and the supply valve which opens and closes the flow path in the said primary side supply piping And a drain valve that is interposed in the drain pipe and opens and closes a flow path in the drain pipe, and the control unit controls opening and closing operations of the supply valve and the drain valve.
  • a fourth aspect is the processing liquid supply apparatus according to the third aspect, wherein the control unit is configured to measure the amount of particles measured by the particle measurement unit in a state where the supply valve is closed and the drainage valve is opened. In response, the output device outputs a notification to the outside.
  • a fifth aspect is the processing liquid supply apparatus according to the third aspect or the fourth aspect, wherein the primary side supply pipe branches into a plurality of branch pipes on the secondary side of the switching unit, and the plurality of branch pipes One filter is connected to each.
  • a 6th aspect is a substrate processing apparatus which processes a board
  • the seventh aspect is a processing liquid supply method for supplying a processing liquid, wherein (a) a step of dissolving a gas in a stock solution of the processing liquid by a dissolution module; and (b) the processing liquid in which the gas is dissolved Supplying from the melting module to the primary supply pipe, (c) filtering the treatment liquid that has passed through the primary supply pipe with a filter connected to the primary supply pipe, and (d) the primary side A step of measuring the amount of particles in the processing liquid passing through the supply pipe; and (e) the processing of the filter in the step (c) according to the amount of particles measured in the step (d). And a step of stopping the supply of the liquid and sending the processing liquid that has passed through the dissolution module to a drainage section through a drainage pipe branched from the primary side supply pipe.
  • the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module is reduced. Thereby, the amount of particles in the treatment liquid that has passed through the dissolution module can be reduced. Further, by stopping the supply of the processing liquid to the filter and allowing the primary side supply pipe to communicate with the drainage pipe, the processing liquid containing particles in the primary side supply pipe can be discharged without passing through the filter. Thereby, since it can reduce that the process liquid containing a particle passes a filter, the lifetime of a filter can be extended. Moreover, it can reduce that the process liquid containing particle
  • the amount of particles in the treatment liquid toward the drainage pipe can be measured in the primary side supply pipe. For this reason, it can be confirmed whether the amount of particles is reduced during the drainage process.
  • control unit automatically controls the opening and closing of the supply valve and the drain valve based on the measured amount of particles to perform the drain process, thereby reducing the burden on the operator.
  • the processing liquid supply apparatus of the fourth aspect by notifying the outside according to the amount of particles measured during the draining process, the operator can appropriately recognize the maintenance / replacement timing of the parts.
  • the processing liquid supply apparatus of the fifth aspect it is possible to reduce the passage of high concentration particles through each filter by draining the primary side of the plurality of filters. For this reason, it is possible to extend the life of each filter and reduce the diffusion of particles to the secondary side of each filter.
  • the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module is reduced. Thereby, the amount of particles in the treatment liquid that has passed through the dissolution module can be reduced. Further, by stopping the supply of the processing liquid to the filter and allowing the primary side supply pipe to communicate with the drainage pipe, the processing liquid containing particles in the primary side supply pipe can be discharged without passing through the filter. Thereby, the lifetime of the filter can be extended. Moreover, it can reduce that the process liquid containing a particle is supplied to a process part with a particle.
  • the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module is reduced. Thereby, the amount of particles in the treatment liquid that has passed through the dissolution module can be reduced. Further, by stopping the supply of the processing liquid to the filter and allowing the primary side supply pipe to communicate with the drainage pipe, the processing liquid containing particles in the primary side supply pipe can be discharged without passing through the filter. Thereby, since it can reduce that the process liquid containing a particle passes a filter, the lifetime of a filter can be extended. Moreover, it can reduce that the process liquid containing particle
  • FIG. 2 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1.
  • FIG. 4 is a flowchart for explaining an operation of the treatment liquid supply unit 3 during a drainage process.
  • 7 is a time chart for explaining the control content during drainage processing by the control unit 52;
  • FIG. 1 is a diagram schematically illustrating a substrate processing apparatus 1 according to an embodiment.
  • the substrate processing apparatus 1 processes a semiconductor wafer W (hereinafter simply referred to as “wafer W”) as an example of a substrate.
  • the substrate processing apparatus 1 includes a plurality of processing units 2 (processing units) and a processing liquid supply unit 3 (processing liquid supply device) that supplies a processing liquid to each processing unit 2.
  • the processing liquid is supplied from one processing liquid supply unit 3 to the four processing units 2, but a dedicated processing liquid supply unit may be provided for each processing unit.
  • the processing unit 2 is a single wafer type apparatus that processes the wafers W one by one with the processing liquid.
  • the processing unit 2 includes a spin chuck 4 that horizontally holds and rotates the wafer W, and a nozzle 5 that supplies a processing liquid as a processing liquid to the wafer W.
  • the spin chuck 4 includes a spin base 8 that can hold the wafer W substantially horizontally and can rotate about the vertical axis, and a rotation drive mechanism 9 that rotates the spin base 8 about the vertical axis.
  • the nozzle 5 may be a fixed nozzle in which the liquid deposition position of the processing liquid on the wafer W is fixed, or the liquid deposition position is moved in a range from the rotation center of the wafer W to the periphery of the wafer W. It may be a movable nozzle (scan nozzle). A processing liquid is supplied to the nozzle 5 from the processing liquid supply unit 3.
  • the treatment liquid supply unit 3 includes a dissolution module 30, filters 31a to 31d, a primary side supply pipe 32, a supply valve 33, secondary side supply pipes 34a to 34d, a pump 35, an air supply valve 36, a drainage pipe 41, a drainage liquid.
  • a valve 42, a particle measuring unit 51, a control unit 52, and discharge valves 53a to 53d are provided.
  • the dissolution module 30 is an apparatus that generates carbonated water obtained by mixing carbon dioxide (CO 2 ) and pure water (DIW) that is a stock solution of the treatment liquid.
  • the melting module 30 is supplied with pure water from a pure water source and carbon dioxide gas from a carbon dioxide gas source (such as a cylinder).
  • the supply of pure water is performed by a pump 35 provided in a pipe connecting the pure water source and the dissolution module 30.
  • the supply of carbon dioxide gas is controlled by an air supply valve 36 interposed in a pipe connecting the melting module 30 and the carbon dioxide gas source.
  • the dissolution module 30 includes, for example, a hollow fiber membrane, and the carbon dioxide gas is dissolved in the pure water by supplying the carbon dioxide gas to the pure water through the hollow fiber membrane.
  • the processing unit 2 reduces the electrification of the wafer W by processing (rinsing) the wafer W with a processing liquid (carbonated water) in which carbon dioxide gas is dissolved in pure water.
  • Filters 31a to 31d filter the processing liquid supplied to each processing unit 2.
  • the filters 31a to 31d have, for example, innumerable pore holes, and filter the processing liquid supplied to the processing unit 2 to remove particles from the processing liquid.
  • the primary supply pipe 32 forms a flow path for the processing liquid.
  • One end of the primary supply pipe 32 is connected to the melting module 30. Further, the other end side of the primary side supply pipe 32 branches into a plurality of branch pipes 320a to 320d at a branch part D1 in the middle.
  • the branch pipes 320a to 320d are connected to the filters 31a to 31d, respectively.
  • the supply valve 33 is interposed in the primary side supply pipe 32. More specifically, the supply valve 33 is provided between the melting module 30 and the branch portion D1. The supply valve 33 controls the on / off of the processing liquid supply from the dissolution module 30 to the filters 31a to 31d by opening and closing a flow path formed by the primary side supply pipe 32.
  • One end of the secondary supply pipe 34 a is connected to the filter 31 a, and the other end is connected to one nozzle 5 among the plurality of processing units 2.
  • the other secondary supply pipes 34b to 34d also have one end connected to one of the filters 31b to 31d and the other end connected to one nozzle 5 of the plurality of processing units 2.
  • the secondary supply pipes 34a to 34d supply the processing liquid filtered by the filters 31a to 31d connected to the nozzles 5 of the processing unit 2, respectively.
  • Discharge valves 53a to 53d are interposed in the secondary supply pipes 34a to 34d, respectively.
  • the discharge valves 53a to 53d control on / off of the discharge of the processing liquid from each of the nozzles 5 by opening and closing the flow path of the processing liquid formed by the secondary side supply pipes 34a to 34d.
  • the discharge valves 53a to 53d may be configured so that the opening degree of the flow path of the secondary supply pipes 34a to 34d can be adjusted. By adjusting the opening degree, it is possible to control the discharge amount of the processing liquid from each nozzle 5 per unit time.
  • the drainage pipe 41 branches from the primary branching portion D2 of the supply valve 33 of the primary side supply pipe 32 and is connected to the drainage tank 90.
  • the drainage tank 90 is provided for storing the processing liquid discharged from the processing liquid supply unit 3.
  • the processing liquid stored in the drainage tank 90 is drained out of the substrate processing apparatus 1 through the discharge pipe 92.
  • the drainage valve 42 is interposed in the drainage pipe 41.
  • the drainage valve 42 opens and closes a flow path formed by the drainage pipe 41 to control on / off of the processing liquid discharge from the primary side supply pipe 32 toward the drainage tank 90.
  • the supply valve 33 and the drainage valve 42 are provided in the primary side supply pipe 32, and the state where the melting module 30 and the filters 31a to 31d communicate with each other and the dissolution module 30 and the drainage tank 90 (drainage part) communicate with each other. It is an example of the switching part switched between the states to perform.
  • the particle measuring unit 51 measures the amount of particles in the processing liquid that passes through the primary supply pipe 32.
  • the particle measuring unit 51 is, for example, a measuring instrument (particle counter) that counts particles (dust, fine particles, impurities, etc.) present in the processing liquid.
  • the particle measuring unit 51 measures the amount of particles by measuring, for example, the intensity of light scattering from the particles and taking out the light intensity proportional to the size of the particles as an electrical signal.
  • the particle measuring unit 51 measures the amount of particles in the processing liquid passing through the piping part 322 between the melting module 30 and the branching part D2 in the primary side supply piping 32.
  • the particle measuring unit 51 includes a sampling pipe 510 that bypasses the pipe portion 322.
  • the sampling pipe 510 has a smaller diameter than the primary side supply pipe 32.
  • the particle measuring unit 51 measures the amount of particles in the processing liquid that passes through the pipe portion 322 by measuring the amount of particles that pass through the sampling pipe 510.
  • FIG. 2 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.
  • the control unit 52 includes a microcomputer, and controls a control target provided in the substrate processing apparatus 1 according to a predetermined control program.
  • the control unit 52 controls the pump 35, the air supply valve 36, the supply valve 33, the drain valve 42, and the discharge valves 53a to 53d.
  • a particle measuring unit 51 is connected to the control unit 52. It is not essential to control the pump 35 and the air supply valve 36 by the control unit 52.
  • the pump 35 may be constantly driven when the processing liquid supply unit 3 is started, so that pure water is constantly pumped from the pure water source.
  • a storage unit 94 is connected to the control unit 52.
  • a recipe 940 is stored in the storage unit 94.
  • the recipe 940 describes processing conditions to be performed on the wafer W in the processing unit 2 in a predetermined data format. Specifically, a processing procedure or processing content (processing time, temperature, pressure, or supply amount) is described.
  • the control unit 52 can access the storage unit 94 and read the recipe 940 as appropriate.
  • the control unit 52 determines whether to supply or stop the processing liquid to the filters 31a to 31d based on the amount of particles in the processing liquid passing through the primary side supply pipe 32 measured by the particle measuring unit 51. Specifically, the control unit 52 controls the opening and closing of the supply valve 33 and the drainage valve 42 when the amount of particles exceeds a predetermined drainage reference value, whereby the inside of the melting module 30 and the primary side supply pipe 32 is controlled. The draining process is performed to discharge the processing liquid. When performing the drainage process, the control unit 52 closes the supply valve 33 and opens the drainage valve 42. In this state, the processing liquid sent to the dissolution module 30 by the pump 35 flows into the drainage pipe 41 through the dissolution module 30 and the primary side supply pipe 32 and is drained. Thereby, the particles accumulated in the melting module 30, the primary supply pipe 32, and the like are appropriately washed away by the processing liquid.
  • the pure water not containing carbon dioxide passes through the dissolution module 30 and the primary supply pipe 32 by closing the air supply valve 36.
  • the inside of the melting module 30 and the primary supply pipe 32 is purified mainly by pure water.
  • the carbon dioxide-containing treatment liquid may be passed through the primary supply pipe 32 by supplying carbon dioxide gas to the dissolution module 30 during the drainage treatment.
  • FIG. 3 is a flowchart for explaining the operation of the processing liquid supply unit 3 during the drainage process.
  • FIG. 4 is a time chart for explaining the control contents during the drainage process by the control unit 52.
  • the operation of the drainage process in the processing liquid supply unit 3 includes step S1 in which the control unit 52 determines whether or not the drainage process is necessary based on a predetermined determination criterion.
  • step S1 as described above, the particle amount is used as a criterion.
  • the particle measuring unit 51 measures the amount of particles (particle amount measuring step).
  • the control unit 52 determines whether or not the particle amount exceeds a predetermined drainage reference value. If not exceeded (No in step S1), step S1 is executed again. In this case, the determination in step S1 may be performed for each cycle in which the particle measuring unit 51 measures the amount of particles.
  • the control unit 52 executes the next step S2.
  • step S2 the controller 52 changes the supply valve 33 from the open state to the closed state. As shown in FIG. 4, when the supply valve 33 is closed, the state in which the processing liquid is supplied to the filters 31a to 31d is changed to the stopped state.
  • the control unit 52 opens the drain valve 42 from the closed state to the open state slightly later or almost at the same time (see step S3 and FIG. 4 in FIG. 3).
  • the melting module 30, the primary side supply pipe 32 (specifically, the pipe portion 322) and the drainage pipe 41 are brought into communication with the drainage tank 90.
  • the pump 35 is in an operating state.
  • the air supply valve 36 is closed.
  • the stock solution (pure water) of the processing liquid not containing carbon dioxide flows from the dissolution module 30 to the drainage pipe 41 through the primary supply pipe 32 and is discharged toward the drainage tank 90 (drainage) Process).
  • the treatment liquid containing carbon dioxide may be drained.
  • the drain valve 42 is closed for a predetermined time T1 while the supply valve 33 is closed, and again for a predetermined time.
  • the opening cycle control is performed a plurality of times (here, four times).
  • flash drainage process such a drainage process is referred to as “flash drainage process”.
  • the flush liquid discharge process since the flow of the process liquid can be moderated, the particles adhering to the inside of the melting module 30 and the primary side supply pipe 32 are likely to fall, so that the particle removal efficiency is improved. I can expect.
  • the drive of the pump 35 may be controlled on and off as indicated by a broken line in FIG. That is, the pump 35 may be stopped at the timing when the drain valve 42 is closed, and the pump 35 may be driven at the timing when the drain valve 42 is opened. Thereby, the pressure rise inside the melting module 30 or the primary supply pipe 32 can be suppressed when the drain valve 42 is closed. Therefore, the burden on the melting module 30 and the pump 35 can be reduced.
  • the drain valve 42 may be always opened to control the driving of the pump 35 on and off. Even in this case, it is possible to execute the flush liquid discharge process. Moreover, it is not essential to perform the flush liquid discharge process. That is, in the drainage process, the pump 35 may be constantly driven and the drain valve 42 may be always opened.
  • the flush draining process may be performed when the control unit 52 determines that the specific condition is satisfied.
  • the “specific condition” is, for example, when the amount of particles measured by the particle measuring unit 51 is an abnormal value exceeding a predetermined threshold value.
  • step S3 after the drain valve 42 is opened, the control unit 52 determines whether or not the amount of particles measured by the particle measuring unit 51 is equal to or less than a predetermined allowable value (step S4).
  • step S4 determines whether or not the amount of particles measured by the particle measuring unit 51 is equal to or less than a predetermined allowable value.
  • Step S4 When the amount of particles exceeds a predetermined allowable value (No in step S4), the process returns to step S3 and the treatment liquid is continuously discharged.
  • the control unit 52 closes the drain valve 42 (see Step S5 in FIG. 3 and FIG. 4). ). When the drain valve 42 is closed, the discharge of the processing liquid is stopped.
  • the controller 52 monitors the amount of particles and performs the drainage process, so that the drainage process can be prevented from being performed more than necessary.
  • the control unit 52 may output a notification to the outside by an output device (display device, printing device, lamp, or the like) according to the amount of particles measured by the particle measuring unit 51.
  • an output device display device, printing device, lamp, or the like
  • the control unit 52 if the particle amount does not fall below the allowable value even if the duration time of the draining process (or the amount of discharged processing liquid) exceeds the reference value, the control unit 52 notifies the outside by the output device. It is good to output.
  • the operator can recognize the abnormality of the treatment liquid supply unit 3, and can appropriately recognize the maintenance / replacement time of parts such as the melting module 30.
  • the controller 52 opens the supply valve 33 from the closed state to the open state with a slight delay or almost at the same time (see step S6 in FIG. 3 and FIG. 4). ). Also, carbon dioxide gas is supplied to the melting module 30 by opening the air supply valve 36. As a result, the treatment liquid containing carbon dioxide again flows through the primary supply pipe 32 and is supplied to each of the filters 31a to 31d (see FIG. 4). In other words, the processing liquid supply unit 3 can supply the processing liquid to the processing unit 2.
  • the supply valve 33 is closed (step S2), and the drain valve 42 is opened (step S3).
  • the processing liquid can be discharged on the primary side (that is, on the supply side of the processing liquid) from the filters 31a to 31d.
  • particles generated in the melting module 30, the primary supply pipe 32, or other dust generation sources are discharged outside without passing through the filters 31a to 31d.
  • the processing liquid containing many particles can be discharged on the primary side of the filters 31a to 31d, the risk that the processing liquid containing the particles diffuses to the secondary side of the filters 31a to 31d can be reduced.
  • the draining process is performed based on the amount of particles measured by the particle measuring unit 51, it is possible to appropriately suppress the processing liquid containing high concentration particles from passing through the filters 31a to 31d. Further, it is possible to prevent the processing liquid containing a large amount of particles from being used for processing the wafer W. Moreover, it can suppress that drainage processing is performed excessively.
  • a maintenance reference value that serves as a guideline for maintaining and exchanging parts such as the melting module 30 may be set in advance. Specifically, when the amount of particles exceeds a predetermined maintenance reference value, the control unit 52 may output a notification to the outside by an output device (display device, printing device, lamp, or the like). By notifying the outside, the worker can appropriately recognize the maintenance / replacement timing of parts such as the melting module 30.
  • the supply valve 33 and the drain valve 42 may be configured to be electrically openable / closable under the control of the control unit 52 as in the above embodiment, but at least one of them may be configured to be manually openable / closable. .
  • the operator's burden can be reduced by automatically controlling opening and closing.
  • a three-way valve may be provided at the branch portion D2 connected to the drainage pipe 41 in the primary side supply pipe 32.
  • the treatment liquid supplied by the treatment liquid supply unit 3 is not limited to the one in which carbon gas is dissolved, but may be one in which other types of gases such as nitrogen gas are dissolved. Further, a liquid obtained by mixing another liquid such as carbonated water or nitrogen gas with another liquid such as a chemical liquid may be used as the treatment liquid.
  • the substrate processing apparatus 1 of the above embodiment is a single-wafer type apparatus that processes the wafers W one by one with the processing liquid in the processing unit 2.
  • the present invention is also applicable to a substrate processing apparatus including a batch type processing unit that processes a plurality of wafers W simultaneously with a processing liquid.
  • the wafer W is taken up as a substrate to be processed.
  • the substrate is not limited to the wafer W.
  • a glass substrate for a liquid crystal display device a plasma display substrate, an FED substrate, an optical disk substrate, a magnetic substrate
  • Other types of substrates such as a disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, and a solar cell substrate may be processed.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Provided is a technique to reduce the quantity of particles in a processing liquid that has passed through a dissolution module. A processing liquid supply unit 3 is a device that supplies a processing liquid that has been filtered by filters 31a–31d to a plurality of processing units 2. A supply valve 33 is disposed within primary-side supply piping 32 connected to the filters 31a–31d. Moreover, drain piping 41 is connected to the primary side of the supply valve 33 in the primary-side supply piping 32. A drain valve 42 is disposed within the drain piping 41. A control unit 52, by closing the supply valve 33 and opening the drain valve 42 in accordance with the quantity of particles in the processing liquid, drains the processing liquid via the dissolution module 30, the primary-side supply piping 32, and the drain piping 41.

Description

処理液供給装置、基板処理装置および処理液供給方法Processing liquid supply apparatus, substrate processing apparatus, and processing liquid supply method
　この発明は、処理対象の基板を処理する処理部に処理液を供給する処理液供給装置および処理液供給方法に関する。処理対象になる基板には、例えば、半導体ウエハ、液晶表示装置用ガラス基板、プラズマディスプレイ用基板、ＦＥＤ(Field Emission Display)用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、太陽電池用基板などの基板が含まれる。 The present invention relates to a processing liquid supply apparatus and a processing liquid supply method for supplying a processing liquid to a processing unit that processes a substrate to be processed. Examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, plasma display substrates, FED (Field-Emission-Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photo Substrates such as a mask substrate, a ceramic substrate, and a solar cell substrate are included.
　半導体装置や液晶表示装置の製造工程では、半導体ウエハなどの基板を処理液によって処理する基板処理装置が用いられる。基板を１枚ずつ処理する枚葉型の基板処理装置は、例えば、基板を水平に保持して回転させるスピンチャックと、このスピンチャックに保持された基板に向けて処理液を吐出する処理液ノズルと有する処理部を、本体部に備えている。処理液ノズルに処理液を供給するために、基板処理装置には、本体部とは別に処理液供給装置が備えられる。処理液ノズルには、処理液供給装置から延びる処理液供給配管が接続されており、この処理液供給配管を介して処理液供給装置の処理液タンクに貯留された処理液が供給される（例えば、特許文献１）。 In a manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus that processes a substrate such as a semiconductor wafer with a processing liquid is used. A single-wafer type substrate processing apparatus that processes substrates one by one includes, for example, a spin chuck that holds and rotates a substrate horizontally, and a processing liquid nozzle that discharges processing liquid toward the substrate held by the spin chuck The main body unit is provided with a processing unit having In order to supply the processing liquid to the processing liquid nozzle, the substrate processing apparatus is provided with a processing liquid supply apparatus separately from the main body. A processing liquid supply pipe extending from the processing liquid supply apparatus is connected to the processing liquid nozzle, and the processing liquid stored in the processing liquid tank of the processing liquid supply apparatus is supplied through the processing liquid supply pipe (for example, Patent Document 1).
　また、溶解モジュールにより所定のガスを溶解させた処理液で基板を処理することも行われている。例えば、純水を主成分とするリンス液で基板を処理する際、その純水に炭酸ガスを所定濃度で溶解させた炭酸水が用いられる場合がある（例えば、特許文献２）。炭酸水で基板をリンス処理することにより、基板の帯電が防止される。 Also, the substrate is processed with a processing solution in which a predetermined gas is dissolved by a melting module. For example, when a substrate is treated with a rinse liquid containing pure water as a main component, carbonated water obtained by dissolving carbon dioxide gas at a predetermined concentration in the pure water may be used (for example, Patent Document 2). Rinsing the substrate with carbonated water prevents the substrate from being charged.
特開２００６－３５１７０９号公報JP 2006-351709 A 特開２０１６－１５７８９５号公報Japanese Unexamined Patent Publication No. 2016-157895
　しかしながら、上記溶解モジュールの長時間使用による経年劣化などの理由により、溶解モジュールを通過した処理液中にパーティクル（異物）が発生することが懸念されている。半導体構造の微細化に伴い、処理液中のパーティクル量の除去が強く求められていることから、溶解モジュールを通過した処理液中のパーティクル量を低減させる技術が求められている。 However, there is a concern that particles (foreign matter) are generated in the processing liquid that has passed through the melting module due to reasons such as deterioration over time due to long-time use of the melting module. As the semiconductor structure is miniaturized, the removal of the amount of particles in the processing liquid is strongly demanded. Therefore, there is a demand for a technique for reducing the amount of particles in the processing liquid that has passed through the dissolution module.
　そこで、本発明は、溶解モジュールを通過した処理液中のパーティクル量を低減させ得る技術を提供することを目的とする。 Therefore, an object of the present invention is to provide a technique capable of reducing the amount of particles in the treatment liquid that has passed through the dissolution module.
　上記課題を解決するため、第１態様は、処理液を供給する処理液供給装置であって、処理液の原液に気体を溶解させる溶解モジュールと、その一方端が前記溶解モジュールの二次側に接続されている一次側供給配管と、前記一次側供給配管の他方端に接続され、前記処理液を濾過するフィルタと、前記フィルタの二次側に接続され、前記フィルタを通過した前記処理液が通過する流路を形成する二次側供給配管と、前記一次側供給配管に接続されており、前記処理液を排液部に送る排液配管と、前記一次側供給配管に設けられ、前記溶解モジュールと前記フィルタとが連通する状態と、前記溶解モジュールと前記排液部とが連通する状態との間で切り替える切替部と、前記切替部の一次側に設けられ、前記一次側供給配管を通過する前記処理液中のパーティクル量を測定するパーティクル測定部と、前記パーティクル測定部によって測定された前記パーティクル量に応じて、前記切替部による切替動作を制御する制御部とを備える。 In order to solve the above-mentioned problem, a first aspect is a processing liquid supply device for supplying a processing liquid, a melting module for dissolving a gas in a raw solution of the processing liquid, and one end thereof on the secondary side of the melting module A primary side supply pipe connected, a filter connected to the other end of the primary side supply pipe and filtering the treatment liquid, and a treatment liquid which is connected to the secondary side of the filter and passed through the filter. A secondary supply pipe that forms a flow path that passes therethrough; a drainage pipe that is connected to the primary supply pipe and that sends the processing liquid to a drainage section; and a primary supply pipe that is provided in the primary supply pipe. A switching unit that switches between a state in which the module and the filter communicate with each other and a state in which the dissolution module and the drainage unit communicate with each other, and a primary side of the switching unit that passes through the primary supply pipe The place to do Comprising a particle measurement unit that measures the amount of particles in the liquid, depending on the amount of particles measured by the particle measurement unit, and a control unit for controlling the switching operation by the switching unit.
　第２態様は、第１態様の処理液供給装置であって、前記パーティクル測定部は、前記一次側供給配管における前記排液配管が接続された部分よりも一次側を通過する前記処理液中の前記パーティクル量を測定する。 A 2nd aspect is a processing liquid supply apparatus of a 1st aspect, Comprising: The said particle | grain measurement part in the said processing liquid which passes a primary side rather than the part to which the said drainage piping in the said primary side supply piping was connected. The amount of particles is measured.
　第３態様は、第１態様または第２態様の処理液供給装置であって、前記切替部は、前記一次側供給配管に介装され、前記一次側供給配管内の流路を開閉する供給バルブと、前記排液配管に介装され、前記排液配管内の流路を開閉する排液バルブと、を備え、前記制御部は、前記供給バルブおよび前記排液バルブの開閉動作を制御する。 A 3rd aspect is a processing liquid supply apparatus of the 1st aspect or the 2nd aspect, Comprising: The said switching part is interposed in the said primary side supply piping, and the supply valve which opens and closes the flow path in the said primary side supply piping And a drain valve that is interposed in the drain pipe and opens and closes a flow path in the drain pipe, and the control unit controls opening and closing operations of the supply valve and the drain valve.
　第４態様は、第３態様の処理液供給装置であって、前記制御部は、前記供給バルブを閉鎖しかつ前記排液バルブを開放した状態で、前記パーティクル測定部により測定される前記パーティクル量に応じて、出力装置により外部に通知を出力する。 A fourth aspect is the processing liquid supply apparatus according to the third aspect, wherein the control unit is configured to measure the amount of particles measured by the particle measurement unit in a state where the supply valve is closed and the drainage valve is opened. In response, the output device outputs a notification to the outside.
　第５態様は、第３態様または第４態様の処理液供給装置であって、前記一次側供給配管は前記切替部の二次側において複数の分岐配管に分岐しており、その複数の分岐配管各々に１つの前記フィルタがそれぞれ接続されている。 A fifth aspect is the processing liquid supply apparatus according to the third aspect or the fourth aspect, wherein the primary side supply pipe branches into a plurality of branch pipes on the secondary side of the switching unit, and the plurality of branch pipes One filter is connected to each.
　第６態様は、基板を処理する基板処理装置であって、第１態様から第５態様のいずれか１つの処理液供給装置と、前記処理液供給装置の前記フィルタで濾過された前記処理液で基板を処理する処理部とを備える。 A 6th aspect is a substrate processing apparatus which processes a board | substrate, Comprising: It is the said process liquid filtered with the said process liquid supply apparatus in any one of the 1st aspect-the 5th aspect, and the said process liquid supply apparatus. And a processing unit for processing the substrate.
　第７態様は、処理液を供給する処理液供給方法であって、（ａ）溶解モジュールによって処理液の原液に気体を溶解させる工程と、（ｂ）前記気体が溶解された前記処理液を前記溶解モジュールから一次側供給配管に供給する工程と、（ｃ）前記一次側供給配管を通過した前記処理液を前記一次側供給配管に接続されたフィルタで濾過する工程と、（ｄ）前記一次側供給配管を通過する前記処理液中のパーティクル量を測定する工程と、（ｅ）前記工程（ｄ）にて測定された前記パーティクル量に応じて、前記工程（ｃ）における前記フィルタへの前記処理液の供給を停止するとともに、前記溶解モジュールを通過した前記処理液を前記一次側供給配管から分岐する排液配管を通じて排液部に送る工程とを含む。 The seventh aspect is a processing liquid supply method for supplying a processing liquid, wherein (a) a step of dissolving a gas in a stock solution of the processing liquid by a dissolution module; and (b) the processing liquid in which the gas is dissolved Supplying from the melting module to the primary supply pipe, (c) filtering the treatment liquid that has passed through the primary supply pipe with a filter connected to the primary supply pipe, and (d) the primary side A step of measuring the amount of particles in the processing liquid passing through the supply pipe; and (e) the processing of the filter in the step (c) according to the amount of particles measured in the step (d). And a step of stopping the supply of the liquid and sending the processing liquid that has passed through the dissolution module to a drainage section through a drainage pipe branched from the primary side supply pipe.
　第１態様の処理液供給装置によると、溶解モジュールを通過した処理液中のパーティクル量が低減されるまで処理液を排出できる。これにより、溶解モジュールを通過した処理液中のパーティクル量を低減できる。また、フィルタへの処理液の供給を停止し、一次側供給配管を排水配管に連通させることにより、一次側供給配管内のパーティクルを含む処理液を、フィルタを通さずに排出できる。これにより、パーティクルを含む処理液がフィルタを通過することを低減できるため、フィルタの長寿命化を図ることができる。また、パーティクルを含む処理液が、フィルタの二次側に拡散することを低減し得る。 According to the processing liquid supply apparatus of the first aspect, the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module is reduced. Thereby, the amount of particles in the treatment liquid that has passed through the dissolution module can be reduced. Further, by stopping the supply of the processing liquid to the filter and allowing the primary side supply pipe to communicate with the drainage pipe, the processing liquid containing particles in the primary side supply pipe can be discharged without passing through the filter. Thereby, since it can reduce that the process liquid containing a particle passes a filter, the lifetime of a filter can be extended. Moreover, it can reduce that the process liquid containing particle | grains diffuses to the secondary side of a filter.
　第２態様の処理液供給装置によると、一次側供給配管において、排液配管に向かう処理液中のパーティクル量を測定できる。このため、排液処理中にパーティクル量が低減されているか否かを確認できる。 According to the treatment liquid supply apparatus of the second aspect, the amount of particles in the treatment liquid toward the drainage pipe can be measured in the primary side supply pipe. For this reason, it can be confirmed whether the amount of particles is reduced during the drainage process.
　第３態様の処理液供給装置によると、制御部が、測定されたパーティクル量に基づき、供給バルブおよび排液バルブを自動的に開閉制御して排液処理を行うため、作業者負担を軽減できる。 According to the processing liquid supply apparatus of the third aspect, the control unit automatically controls the opening and closing of the supply valve and the drain valve based on the measured amount of particles to perform the drain process, thereby reducing the burden on the operator. .
　第４態様の処理液供給装置によると、排液処理中に測定されたパーティクル量に応じて外部に通知を行うことにより、パーツの保守・交換時期等を作業者が適切に認知し得る。 According to the processing liquid supply apparatus of the fourth aspect, by notifying the outside according to the amount of particles measured during the draining process, the operator can appropriately recognize the maintenance / replacement timing of the parts.
　第５態様の処理液供給装置によると、複数のフィルタの一次側で排液を行うことにより、高濃度のパーティクルがフィルタ各々を通過することを低減できる。このため、各フィルタの長寿命化を図ることができるとともに、パーティクルが各フィルタの二次側に拡散することを低減し得る。 According to the processing liquid supply apparatus of the fifth aspect, it is possible to reduce the passage of high concentration particles through each filter by draining the primary side of the plurality of filters. For this reason, it is possible to extend the life of each filter and reduce the diffusion of particles to the secondary side of each filter.
　第６態様の基板処理装置によると、溶解モジュールを通過した処理液中のパーティクル量が低減されるまで処理液を排出できる。これにより、溶解モジュールを通過した処理液中のパーティクル量を低減できる。また、フィルタへの処理液の供給を停止し、一次側供給配管を排水配管に連通させることにより、一次側供給配管内のパーティクルを含む処理液を、フィルタを通さずに排出できる。これにより、フィルタの長寿命化を図ることができる。また、パーティクルとともに、パーティクルを含む処理液が、処理部に供給されることを低減し得る。 According to the substrate processing apparatus of the sixth aspect, the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module is reduced. Thereby, the amount of particles in the treatment liquid that has passed through the dissolution module can be reduced. Further, by stopping the supply of the processing liquid to the filter and allowing the primary side supply pipe to communicate with the drainage pipe, the processing liquid containing particles in the primary side supply pipe can be discharged without passing through the filter. Thereby, the lifetime of the filter can be extended. Moreover, it can reduce that the process liquid containing a particle is supplied to a process part with a particle.
　第７態様の処理液供給方法によると、溶解モジュールを通過した処理液中のパーティクル量が低減されるまで処理液を排出できる。これにより、溶解モジュールを通過した処理液中のパーティクル量を低減できる。また、フィルタへの処理液の供給を停止し、一次側供給配管を排水配管に連通させることにより、一次側供給配管内のパーティクルを含む処理液を、フィルタを通さずに排出できる。これにより、パーティクルを含む処理液がフィルタを通過することを低減できるため、フィルタの長寿命化を図ることができる。また、パーティクルを含む処理液が、フィルタの二次側に拡散することを低減し得る。 According to the processing liquid supply method of the seventh aspect, the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module is reduced. Thereby, the amount of particles in the treatment liquid that has passed through the dissolution module can be reduced. Further, by stopping the supply of the processing liquid to the filter and allowing the primary side supply pipe to communicate with the drainage pipe, the processing liquid containing particles in the primary side supply pipe can be discharged without passing through the filter. Thereby, since it can reduce that the process liquid containing a particle passes a filter, the lifetime of a filter can be extended. Moreover, it can reduce that the process liquid containing particle | grains diffuses to the secondary side of a filter.
実施形態の基板処理装置１を模式的に示す図である。It is a figure showing typically substrate processing device 1 of an embodiment. 基板処理装置１の主要部の電気的構成を説明するためのブロック図である。2 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1. FIG. 処理液供給ユニット３の排液処理時の動作を説明するためのフローチャートである。4 is a flowchart for explaining an operation of the treatment liquid supply unit 3 during a drainage process. 制御部５２による排液処理時の制御内容を説明するためのタイムチャートである。7 is a time chart for explaining the control content during drainage processing by the control unit 52;
　以下、添付の図面を参照しながら、本発明の実施形態について説明する。なお、この実施形態に記載されている構成要素はあくまでも例示であり、本発明の範囲をそれらのみに限定する趣旨のものではない。図面においては、理解容易のため、必要に応じて各部の寸法や数が誇張または簡略化して図示されている場合がある。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the component described in this embodiment is an illustration to the last, and is not a thing of the meaning which limits the scope of the present invention only to them. In the drawings, the size and number of each part may be exaggerated or simplified as needed for easy understanding.
　＜１．　実施形態＞
　図１は、実施形態の基板処理装置１を模式的に示す図である。基板処理装置１は、基板の一例としての半導体ウエハＷ（以下、単に「ウエハＷ」という。）を処理する。基板処理装置１は、複数の処理ユニット２（処理部）と、各処理ユニット２に処理液を供給する処理液供給ユニット３（処理液供給装置）を備えている。ここでは、４つの処理ユニット２に対して１つの処理液供給ユニット３から処理液が供給されているが、各処理ユニットに対して専用の処理液供給ユニットが設けられていてもよい。 <1. Embodiment>
FIG. 1 is a diagram schematically illustrating a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 processes a semiconductor wafer W (hereinafter simply referred to as “wafer W”) as an example of a substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 (processing units) and a processing liquid supply unit 3 (processing liquid supply device) that supplies a processing liquid to each processing unit 2. Here, the processing liquid is supplied from one processing liquid supply unit 3 to the four processing units 2, but a dedicated processing liquid supply unit may be provided for each processing unit.
　処理ユニット２は、ウエハＷを１枚ずつ処理液で処理する枚葉型の装置である。処理ユニット２は、ウエハＷを水平に保持して回転させるスピンチャック４と、処理液としての処理液をウエハＷに供給するノズル５とを備えている。 The processing unit 2 is a single wafer type apparatus that processes the wafers W one by one with the processing liquid. The processing unit 2 includes a spin chuck 4 that horizontally holds and rotates the wafer W, and a nozzle 5 that supplies a processing liquid as a processing liquid to the wafer W.
　スピンチャック４は、ウエハＷをほぼ水平に保持して鉛直軸線まわりに回転可能なスピンベース８と、このスピンベース８を鉛直軸線まわりに回転させる回転駆動機構９とを含む。ノズル５は、ウエハＷ上での処理液の着液位置が固定された固定ノズルとされていてもよいし、着液位置がウエハＷの回転中心からウエハＷの周縁に至る範囲で移動される可動ノズル（スキャンノズル）とされていてもよい。ノズル５には、処理液供給ユニット３から処理液が供給される。 The spin chuck 4 includes a spin base 8 that can hold the wafer W substantially horizontally and can rotate about the vertical axis, and a rotation drive mechanism 9 that rotates the spin base 8 about the vertical axis. The nozzle 5 may be a fixed nozzle in which the liquid deposition position of the processing liquid on the wafer W is fixed, or the liquid deposition position is moved in a range from the rotation center of the wafer W to the periphery of the wafer W. It may be a movable nozzle (scan nozzle). A processing liquid is supplied to the nozzle 5 from the processing liquid supply unit 3.
　処理液供給ユニット３は、溶解モジュール３０、フィルタ３１ａ～３１ｄ、一次側供給配管３２、供給バルブ３３、二次側供給配管３４ａ～３４ｄ、ポンプ３５、給気バルブ３６、排液配管４１、排液バルブ４２、パーティクル測定部５１、制御部５２、吐出バルブ５３ａ～５３ｄを備えている。 The treatment liquid supply unit 3 includes a dissolution module 30, filters 31a to 31d, a primary side supply pipe 32, a supply valve 33, secondary side supply pipes 34a to 34d, a pump 35, an air supply valve 36, a drainage pipe 41, a drainage liquid. A valve 42, a particle measuring unit 51, a control unit 52, and discharge valves 53a to 53d are provided.
　溶解モジュール３０は、炭酸ガス（ＣＯ２）と処理液の原液である純水（ＤＩＷ）とを混合した炭酸水を生成する装置である。溶解モジュール３０には、純水源から純水が供給されるとともに、炭酸ガス源（ボンベ等）から炭酸ガスが供給される。純水の供給は、純水源と溶解モジュール３０とをつなぐ配管に設けられたポンプ３５によって行われる。また、炭酸ガスの供給は、溶解モジュール３０と炭酸ガス源とをつなぐ配管に介装された給気バルブ３６によって制御される。溶解モジュール３０は、例えば中空糸膜を備えており、その中空糸膜を介して純水に炭酸ガスを給気することによって、炭酸ガスを純水中に溶解させる。処理ユニット２では、純水に炭酸ガスが溶解された処理液（炭酸水）でウエハＷを処理（リンス処理）することによって、ウエハＷの帯電を低減する。 The dissolution module 30 is an apparatus that generates carbonated water obtained by mixing carbon dioxide (CO 2 ) and pure water (DIW) that is a stock solution of the treatment liquid. The melting module 30 is supplied with pure water from a pure water source and carbon dioxide gas from a carbon dioxide gas source (such as a cylinder). The supply of pure water is performed by a pump 35 provided in a pipe connecting the pure water source and the dissolution module 30. The supply of carbon dioxide gas is controlled by an air supply valve 36 interposed in a pipe connecting the melting module 30 and the carbon dioxide gas source. The dissolution module 30 includes, for example, a hollow fiber membrane, and the carbon dioxide gas is dissolved in the pure water by supplying the carbon dioxide gas to the pure water through the hollow fiber membrane. The processing unit 2 reduces the electrification of the wafer W by processing (rinsing) the wafer W with a processing liquid (carbonated water) in which carbon dioxide gas is dissolved in pure water.
　フィルタ３１ａ～３１ｄは、処理ユニット２各々に供給される処理液を濾過する。フィルタ３１ａ～３１ｄは、例えば、無数のポア孔を備えており、処理ユニット２に供給される処理液を濾過して、処理液からパーティクルを除去する。 Filters 31a to 31d filter the processing liquid supplied to each processing unit 2. The filters 31a to 31d have, for example, innumerable pore holes, and filter the processing liquid supplied to the processing unit 2 to remove particles from the processing liquid.
　一次側供給配管３２は、処理液の流路を形成している。一次側供給配管３２の一端は溶解モジュール３０に接続されている。また、一次側供給配管３２の他端側は、途中の分岐部Ｄ１にて複数の分岐配管３２０ａ～３２０ｄに分岐している。分岐配管３２０ａ～３２０ｄは、フィルタ３１ａ～３１ｄ各々に接続されている。 The primary supply pipe 32 forms a flow path for the processing liquid. One end of the primary supply pipe 32 is connected to the melting module 30. Further, the other end side of the primary side supply pipe 32 branches into a plurality of branch pipes 320a to 320d at a branch part D1 in the middle. The branch pipes 320a to 320d are connected to the filters 31a to 31d, respectively.
　供給バルブ３３は、一次側供給配管３２に介装されている。より詳細には、供給バルブ３３は、溶解モジュール３０と分岐部Ｄ１との間に設けられている。供給バルブ３３は、一次側供給配管３２が形成する流路を開閉することによって、溶解モジュール３０からフィルタ３１ａ～３１ｄへの処理液供給のオンオフを制御する。 The supply valve 33 is interposed in the primary side supply pipe 32. More specifically, the supply valve 33 is provided between the melting module 30 and the branch portion D1. The supply valve 33 controls the on / off of the processing liquid supply from the dissolution module 30 to the filters 31a to 31d by opening and closing a flow path formed by the primary side supply pipe 32.
　二次側供給配管３４ａは、一端がフィルタ３１ａに接続されており、他端が複数の処理ユニット２のうち１つのノズル５に接続されている。他の二次側供給配管３４ｂ～３４ｄについても、一端がフィルタ３１ｂ～３１ｄの１つに接続されており、他端が複数の処理ユニット２のうち１つのノズル５に接続されている。二次側供給配管３４ａ～３４ｄは、各々に接続されたフィルタ３１ａ～３１ｄで濾過された処理液を、処理ユニット２のノズル５に供給する。 One end of the secondary supply pipe 34 a is connected to the filter 31 a, and the other end is connected to one nozzle 5 among the plurality of processing units 2. The other secondary supply pipes 34b to 34d also have one end connected to one of the filters 31b to 31d and the other end connected to one nozzle 5 of the plurality of processing units 2. The secondary supply pipes 34a to 34d supply the processing liquid filtered by the filters 31a to 31d connected to the nozzles 5 of the processing unit 2, respectively.
　二次側供給配管３４ａ～３４ｄ各々には、吐出バルブ５３ａ～５３ｄがそれぞれ介装されている。吐出バルブ５３ａ～５３ｄは、二次側供給配管３４ａ～３４ｄが形成する処理液の流路を開閉することによって、ノズル５各々からの処理液の吐出のオンオフを制御する。なお、吐出バルブ５３ａ～５３ｄは、二次側供給配管３４ａ～３４ｄの流路の開度を調整可能に構成してもよい。この開度調整によって、ノズル５各々からの処理液の単位時間当たりの吐出量が制御可能とされ得る。 Discharge valves 53a to 53d are interposed in the secondary supply pipes 34a to 34d, respectively. The discharge valves 53a to 53d control on / off of the discharge of the processing liquid from each of the nozzles 5 by opening and closing the flow path of the processing liquid formed by the secondary side supply pipes 34a to 34d. The discharge valves 53a to 53d may be configured so that the opening degree of the flow path of the secondary supply pipes 34a to 34d can be adjusted. By adjusting the opening degree, it is possible to control the discharge amount of the processing liquid from each nozzle 5 per unit time.
　排液配管４１は、一次側供給配管３２の供給バルブ３３の一次側の分岐部Ｄ２から分岐して、排液タンク９０に接続されている。排液タンク９０は、処理液供給ユニット３から排出された処理液を溜めておくために設けられている。排液タンク９０に溜められた処理液は、排出配管９２を通じて基板処理装置１の機外に排液される。 The drainage pipe 41 branches from the primary branching portion D2 of the supply valve 33 of the primary side supply pipe 32 and is connected to the drainage tank 90. The drainage tank 90 is provided for storing the processing liquid discharged from the processing liquid supply unit 3. The processing liquid stored in the drainage tank 90 is drained out of the substrate processing apparatus 1 through the discharge pipe 92.
　排液バルブ４２は、排液配管４１に介装されている。排液バルブ４２は、排液配管４１が形成する流路を開閉することにより、一次側供給配管３２内から排液タンク９０へ向けた処理液排出のオンオフを制御する。 The drainage valve 42 is interposed in the drainage pipe 41. The drainage valve 42 opens and closes a flow path formed by the drainage pipe 41 to control on / off of the processing liquid discharge from the primary side supply pipe 32 toward the drainage tank 90.
　供給バルブ３３および排液バルブ４２は、一次側供給配管３２に設けられ、溶解モジュール３０とフィルタ３１ａ～３１ｄとが連通する状態と、溶解モジュール３０と排液タンク９０（排液部）とが連通する状態との間で切り替える切替部の一例である。 The supply valve 33 and the drainage valve 42 are provided in the primary side supply pipe 32, and the state where the melting module 30 and the filters 31a to 31d communicate with each other and the dissolution module 30 and the drainage tank 90 (drainage part) communicate with each other. It is an example of the switching part switched between the states to perform.
　パーティクル測定部５１は、一次側供給配管３２を通過する処理液中のパーティクル量を測定する。パーティクル測定部５１は、例えば、処理液中に存在するパーティクル（埃や微粒子、不純物など）を計数する計測器（パーティクルカウンタ）である。パーティクル測定部５１は、例えば、パーティクルからの光の散乱の強さを測り、そのパーティクルの大きさに比例した光強度を電気信号として取り出すことでパーティクル量を測定する。 The particle measuring unit 51 measures the amount of particles in the processing liquid that passes through the primary supply pipe 32. The particle measuring unit 51 is, for example, a measuring instrument (particle counter) that counts particles (dust, fine particles, impurities, etc.) present in the processing liquid. The particle measuring unit 51 measures the amount of particles by measuring, for example, the intensity of light scattering from the particles and taking out the light intensity proportional to the size of the particles as an electrical signal.
　パーティクル測定部５１は、一次側供給配管３２における溶解モジュール３０から分岐部Ｄ２までの間の配管部分３２２を通過する処理液中のパーティクル量を測定する。ここでは、パーティクル測定部５１は、この配管部分３２２をバイパスするサンプリング配管５１０を有する。サンプリング配管５１０は、一次側供給配管３２よりも小径とされる。パーティクル測定部５１は、サンプリング配管５１０を通過するパーティクル量を測定することにより、配管部分３２２を通過する処理液中のパーティクル量を測定する。 The particle measuring unit 51 measures the amount of particles in the processing liquid passing through the piping part 322 between the melting module 30 and the branching part D2 in the primary side supply piping 32. Here, the particle measuring unit 51 includes a sampling pipe 510 that bypasses the pipe portion 322. The sampling pipe 510 has a smaller diameter than the primary side supply pipe 32. The particle measuring unit 51 measures the amount of particles in the processing liquid that passes through the pipe portion 322 by measuring the amount of particles that pass through the sampling pipe 510.
　図２は、基板処理装置１の主要部の電気的構成を説明するためのブロック図である。制御部５２は、マイクロコンピュータを備えており、所定の制御プログラムに従って、基板処理装置１に備えられた制御対象を制御する。特に、制御部５２は、ポンプ３５、給気バルブ３６、供給バルブ３３、排液バルブ４２および吐出バルブ５３ａ～５３ｄを制御する。制御部５２には、パーティクル測定部５１が接続されている。なお、ポンプ３５および給気バルブ３６を制御部５２によって制御することは必須ではない。例えば、ポンプ３５は、処理液供給ユニット３の起動時には常時駆動することによって、純水源から純水を常時汲み出すようにしてもよい。 FIG. 2 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1. The control unit 52 includes a microcomputer, and controls a control target provided in the substrate processing apparatus 1 according to a predetermined control program. In particular, the control unit 52 controls the pump 35, the air supply valve 36, the supply valve 33, the drain valve 42, and the discharge valves 53a to 53d. A particle measuring unit 51 is connected to the control unit 52. It is not essential to control the pump 35 and the air supply valve 36 by the control unit 52. For example, the pump 35 may be constantly driven when the processing liquid supply unit 3 is started, so that pure water is constantly pumped from the pure water source.
　また、制御部５２には、記憶部９４が接続されている。記憶部９４には、レシピ９４０が保存されている。レシピ９４０には、処理ユニット２においてウエハＷに対して施されるべき処理の条件が所定のデータ形式で記述されている。具体的には、処理手順または処理内容（処理時間、温度、圧力または供給量）などが記述されている。制御部５２は、記憶部９４にアクセスしてレシピ９４０を適宜読み出し可能となっている。 Further, a storage unit 94 is connected to the control unit 52. A recipe 940 is stored in the storage unit 94. The recipe 940 describes processing conditions to be performed on the wafer W in the processing unit 2 in a predetermined data format. Specifically, a processing procedure or processing content (processing time, temperature, pressure, or supply amount) is described. The control unit 52 can access the storage unit 94 and read the recipe 940 as appropriate.
　制御部５２は、パーティクル測定部５１によって測定された、一次側供給配管３２を通過する処理液中のパーティクル量に基づき、フィルタ３１ａ～３１ｄに対する処理液の供給または停止する判断をする。詳細には、制御部５２は、パーティクル量が所定の排液基準値を超えた場合に、供給バルブ３３および排液バルブ４２の開閉を制御することにより、溶解モジュール３０および一次側供給配管３２内の処理液を排出する排液処理を行う。制御部５２は、排液処理を行う場合、供給バルブ３３を閉鎖し、排液バルブ４２を開放する。この状態で、ポンプ３５により溶解モジュール３０に送られた処理液が、溶解モジュール３０および一次側供給配管３２を通って、排液配管４１に流れ込み、そして排液される。これにより、溶解モジュール３０や一次側供給配管３２などに蓄積されていたパーティクルが、処理液によって適宜洗い流される。 The control unit 52 determines whether to supply or stop the processing liquid to the filters 31a to 31d based on the amount of particles in the processing liquid passing through the primary side supply pipe 32 measured by the particle measuring unit 51. Specifically, the control unit 52 controls the opening and closing of the supply valve 33 and the drainage valve 42 when the amount of particles exceeds a predetermined drainage reference value, whereby the inside of the melting module 30 and the primary side supply pipe 32 is controlled. The draining process is performed to discharge the processing liquid. When performing the drainage process, the control unit 52 closes the supply valve 33 and opens the drainage valve 42. In this state, the processing liquid sent to the dissolution module 30 by the pump 35 flows into the drainage pipe 41 through the dissolution module 30 and the primary side supply pipe 32 and is drained. Thereby, the particles accumulated in the melting module 30, the primary supply pipe 32, and the like are appropriately washed away by the processing liquid.
　排液処理時においては、給気バルブ３６を閉鎖することにより、二酸化炭素を含まない純水のみが溶解モジュール３０および一次側供給配管３２を通過する。この場合、主に純水によって、溶解モジュール３０および一次側供給配管３２の内部が浄化される。ただし、排液処理時に溶解モジュール３０に炭酸ガスを供給することによって、二酸化炭素を含む処理液が一次側供給配管３２を通過させてもよい。 At the time of the drainage treatment, only the pure water not containing carbon dioxide passes through the dissolution module 30 and the primary supply pipe 32 by closing the air supply valve 36. In this case, the inside of the melting module 30 and the primary supply pipe 32 is purified mainly by pure water. However, the carbon dioxide-containing treatment liquid may be passed through the primary supply pipe 32 by supplying carbon dioxide gas to the dissolution module 30 during the drainage treatment.
　＜処理液供給ユニット３の動作説明＞
　制御部５２は、処理ユニット２各々に処理液を供給する場合、ポンプ３５を駆動するとともに、給気バルブ３６を開放する。これにより、溶解モジュール３０において、処理液（炭酸水）が生成される。そして、制御部５２は、供給バルブ３３を開放状態とし、排液バルブ４２を閉鎖状態として、溶解モジュール３０にて生成された処理液を、一次側供給配管３２を通じてフィルタ３１ａ～３１ｄに供給する（供給工程）。すると、フィルタ３１ａ～３１ｄ各々を処理液が通過することにより、処理液が濾過される（濾過工程）。この濾過によりパーティクルが除去された処理液が、処理ユニット２各々に送られると、各処理ユニット２のノズル５からウエハＷに供給されて、ウエハＷが処理される。 <Description of Operation of Treatment Liquid Supply Unit 3>
When supplying the processing liquid to each processing unit 2, the control unit 52 drives the pump 35 and opens the air supply valve 36. Thereby, in the dissolution module 30, a treatment liquid (carbonated water) is generated. Then, the control unit 52 opens the supply valve 33 and closes the drain valve 42 to supply the processing liquid generated in the dissolution module 30 to the filters 31a to 31d through the primary side supply pipe 32 ( Supply process). Then, the processing liquid passes through each of the filters 31a to 31d, so that the processing liquid is filtered (filtering step). When the processing liquid from which particles have been removed by this filtration is sent to each processing unit 2, the wafer W is processed by being supplied to the wafer W from the nozzle 5 of each processing unit 2.
　図３は、処理液供給ユニット３の排液処理時の動作を説明するためのフローチャートである。図４は、制御部５２による排液処理時の制御内容を説明するためのタイムチャートである。 FIG. 3 is a flowchart for explaining the operation of the processing liquid supply unit 3 during the drainage process. FIG. 4 is a time chart for explaining the control contents during the drainage process by the control unit 52.
　図３に示すように、処理液供給ユニット３における排液処理の動作には、制御部５２が、所定の判断基準に基づいて、排液処理の要否を判断するステップＳ１を含む。このステップＳ１では、上述したように、パーティクル量を判断基準とする。 As shown in FIG. 3, the operation of the drainage process in the processing liquid supply unit 3 includes step S1 in which the control unit 52 determines whether or not the drainage process is necessary based on a predetermined determination criterion. In step S1, as described above, the particle amount is used as a criterion.
　具体的には、パーティクル測定部５１がパーティクル量を測定する（パーティクル量測定工程）。そして、制御部５２は、その測定結果であるパーティクル量の情報を受け取ると、そのパーティクル量が所定の排液基準値を超えるか否かを判断する。超えていない場合（ステップＳ１にてＮｏ）、ステップＳ１が再度実行される。なお、この場合、ステップＳ１の判断は、パーティクル測定部５１がパーティクル量を測定するサイクル毎に、行われるとよい。パーティクル量が排液基準値を超えていた場合（ステップＳ１においてＹｅｓ）、制御部５２は、次のステップＳ２を実行する。 Specifically, the particle measuring unit 51 measures the amount of particles (particle amount measuring step). When the control unit 52 receives the particle amount information as the measurement result, the control unit 52 determines whether or not the particle amount exceeds a predetermined drainage reference value. If not exceeded (No in step S1), step S1 is executed again. In this case, the determination in step S1 may be performed for each cycle in which the particle measuring unit 51 measures the amount of particles. When the amount of particles exceeds the drainage reference value (Yes in step S1), the control unit 52 executes the next step S2.
　ステップＳ２では、制御部５２が、供給バルブ３３を開放状態から閉鎖状態とする。図４に示すように、供給バルブ３３が閉鎖されると、処理液がフィルタ３１ａ～３１ｄに供給される状態から、停止される状態となる。 In step S2, the controller 52 changes the supply valve 33 from the open state to the closed state. As shown in FIG. 4, when the supply valve 33 is closed, the state in which the processing liquid is supplied to the filters 31a to 31d is changed to the stopped state.
　制御部５２は、供給バルブ３３を閉鎖すると、それに若干遅れて、あるいは、それとほぼ同時のタイミングで、排液バルブ４２を閉鎖状態から開放状態とする（図３のステップＳ３、図４参照）。これにより、溶解モジュール３０、一次側供給配管３２（詳細には、配管部分３２２）および排液配管４１が、排液タンク９０に連通する状態となる。このとき、図４に示すように、ポンプ３５は稼働状態である。また、給気バルブ３６が閉鎖される。このため、二酸化炭素を含まない処理液の原液（純水）が、溶解モジュール３０から一次側供給配管３２を通って排液配管４１へ流れ込み、排液タンク９０に向けて排出される（排液工程）。なお、上述したように、排液工程においては、給気バルブ３６を閉鎖することは必須ではない。すなわち、二酸化炭素を含む処理液を排液するようにしてもよい。 When the supply valve 33 is closed, the control unit 52 opens the drain valve 42 from the closed state to the open state slightly later or almost at the same time (see step S3 and FIG. 4 in FIG. 3). As a result, the melting module 30, the primary side supply pipe 32 (specifically, the pipe portion 322) and the drainage pipe 41 are brought into communication with the drainage tank 90. At this time, as shown in FIG. 4, the pump 35 is in an operating state. Further, the air supply valve 36 is closed. For this reason, the stock solution (pure water) of the processing liquid not containing carbon dioxide flows from the dissolution module 30 to the drainage pipe 41 through the primary supply pipe 32 and is discharged toward the drainage tank 90 (drainage) Process). As described above, it is not essential to close the air supply valve 36 in the draining process. That is, the treatment liquid containing carbon dioxide may be drained.
　図４に示すように、本実施形態の排液工程では、排液バルブ４２を開放した後、供給バルブ３３は閉鎖したまま、排液バルブ４２を所定時間Ｔ１分だけ閉鎖として再び所定時間分だけ開放するサイクル制御を複数回（ここでは４回）行っている。このように、排液バルブ４２を定期的に閉鎖することにより、溶解モジュール３０および一次側供給配管３２内の処理液の流れを間欠的に停止させることができる。以下、このような排液処理を「フラッシュ排液処理」と呼ぶ。フラッシュ排液処理によると、処理液の流れに緩急を付けることができるため、溶解モジュール３０および一次側供給配管３２の内部に付着していたパーティクルが落ち易くなるため、パーティクルの除去効率の向上が期待できる。 As shown in FIG. 4, in the draining process of the present embodiment, after the drain valve 42 is opened, the drain valve 42 is closed for a predetermined time T1 while the supply valve 33 is closed, and again for a predetermined time. The opening cycle control is performed a plurality of times (here, four times). In this way, by periodically closing the drain valve 42, the flow of the processing liquid in the melting module 30 and the primary supply pipe 32 can be intermittently stopped. Hereinafter, such a drainage process is referred to as “flash drainage process”. According to the flush liquid discharge process, since the flow of the process liquid can be moderated, the particles adhering to the inside of the melting module 30 and the primary side supply pipe 32 are likely to fall, so that the particle removal efficiency is improved. I can expect.
　なお、制御部５２が、フラッシュ排液処理において、排液バルブ４２を開閉制御する際に、図４中破線で示されるように、ポンプ３５の駆動をオンオフ制御してもよい。すなわち、排液バルブ４２を閉鎖するタイミングに合わせてポンプ３５を停止させ、排液バルブ４２を開放するタイミングに合わせてポンプ３５を駆動させてもよい。これにより、排液バルブ４２の閉鎖時に溶解モジュール３０または一次側供給配管３２の内部の圧力上昇を抑制できる。したがって、溶解モジュール３０やポンプ３５にかかる負担を軽減し得る。 In addition, when the control part 52 controls opening / closing of the drainage valve 42 in the flush drainage processing, the drive of the pump 35 may be controlled on and off as indicated by a broken line in FIG. That is, the pump 35 may be stopped at the timing when the drain valve 42 is closed, and the pump 35 may be driven at the timing when the drain valve 42 is opened. Thereby, the pressure rise inside the melting module 30 or the primary supply pipe 32 can be suppressed when the drain valve 42 is closed. Therefore, the burden on the melting module 30 and the pump 35 can be reduced.
　また、排液工程の間、排液バルブ４２を常時開放して、ポンプ３５の駆動をオンオフ制御してもよい。この場合においても、フラッシュ排液処理を実行することが可能である。また、フラッシュ排液処理を実行することは必須ではない。つまり、排液工程において、ポンプ３５を常時駆動するとともに、排液バルブ４２を常時開放してもよい。 Further, during the draining process, the drain valve 42 may be always opened to control the driving of the pump 35 on and off. Even in this case, it is possible to execute the flush liquid discharge process. Moreover, it is not essential to perform the flush liquid discharge process. That is, in the drainage process, the pump 35 may be constantly driven and the drain valve 42 may be always opened.
　また、排液工程において、制御部５２が特定の条件を満たすと判断したときに、フラッシュ排液処理が行われるようにしてもよい。「特定の条件」とは、例えば、パーティクル測定部５１によって測定されたパーティクル量が所定のしきい値を超える異常値であるときである。 Further, in the draining process, the flush draining process may be performed when the control unit 52 determines that the specific condition is satisfied. The “specific condition” is, for example, when the amount of particles measured by the particle measuring unit 51 is an abnormal value exceeding a predetermined threshold value.
　ステップＳ３において、排液バルブ４２が開放された後、制御部５２は、パーティクル測定部５１によって測定されるパーティクル量が所定の許容値以下になったかどうかを判断する（ステップＳ４）。処理液の排出により溶解モジュール３０および一次側供給配管３２内部のパーティクルが除去された場合は、パーティクル量が減少すると期待される。このため、ステップＳ５において、パーティクル量を監視することにより、排液を継続するか否かが判断される。 In step S3, after the drain valve 42 is opened, the control unit 52 determines whether or not the amount of particles measured by the particle measuring unit 51 is equal to or less than a predetermined allowable value (step S4). When the particles in the dissolution module 30 and the primary supply pipe 32 are removed by the discharge of the processing liquid, the amount of particles is expected to decrease. Therefore, in step S5, it is determined whether or not to continue draining by monitoring the amount of particles.
　パーティクル量が所定の許容値を超えている場合（ステップＳ４においてＮｏ）、ステップＳ３に戻って、処理液の排出が継続して行われる。一方、処理液の排出によりパーティクル量が所定の許容値以下となった場合（ステップＳ４においてＹｅｓ）、制御部５２は、排液バルブ４２を閉鎖状態とする（図３のステップＳ５、図４参照）。排液バルブ４２が閉鎖されることにより、処理液の排出が停止される。このように、制御部５２がパーティクル量を監視して排液処理を行うことにより、排液処理が必要以上に行われることを抑制できる。 When the amount of particles exceeds a predetermined allowable value (No in step S4), the process returns to step S3 and the treatment liquid is continuously discharged. On the other hand, when the particle amount becomes equal to or smaller than the predetermined allowable value due to the discharge of the processing liquid (Yes in Step S4), the control unit 52 closes the drain valve 42 (see Step S5 in FIG. 3 and FIG. 4). ). When the drain valve 42 is closed, the discharge of the processing liquid is stopped. As described above, the controller 52 monitors the amount of particles and performs the drainage process, so that the drainage process can be prevented from being performed more than necessary.
　なお、ステップＳ４において、パーティクル測定部５１が測定するパーティクル量に応じて、制御部５２が出力装置（表示装置、印刷装置またはランプなど）によって外部に通知を出力してもよい。例えば、排液処理の継続時間（または、処理液の排出量）に関して、予め基準値を定めることが考えられる。すなわち、ステップＳ４において、排液処理の継続時間（または、処理液の排出量）が基準値を超えても、パーティクル量が許容値を下回らない場合、制御部５２が出力装置によって外部に通知を出力するとよい。この通知により、作業者は、処理液供給ユニット３の異常を認知できるため、溶解モジュール３０などのパーツの保守・交換時期を適切に認知し得る。 In step S4, the control unit 52 may output a notification to the outside by an output device (display device, printing device, lamp, or the like) according to the amount of particles measured by the particle measuring unit 51. For example, it is conceivable to set a reference value in advance with respect to the duration time of the drainage process (or the discharge amount of the process liquid). In other words, in step S4, if the particle amount does not fall below the allowable value even if the duration time of the draining process (or the amount of discharged processing liquid) exceeds the reference value, the control unit 52 notifies the outside by the output device. It is good to output. By this notification, the operator can recognize the abnormality of the treatment liquid supply unit 3, and can appropriately recognize the maintenance / replacement time of parts such as the melting module 30.
　制御部５２は、排液バルブ４２を閉鎖状態とすると、それに若干遅れて、あるいは、それとほぼ同時のタイミングで、供給バルブ３３を閉鎖状態から開放状態とする（図３のステップＳ６、図４参照）。また、給気バルブ３６が開放されることにより、溶解モジュール３０に対して炭酸ガスが供給される。これにより、二酸化炭素を含む処理液が再び一次側供給配管３２内を流れて、フィルタ３１ａ～３１ｄ各々に供給される状態となる（図４参照）。すなわち、処理液供給ユニット３が処理ユニット２に対して処理液供給可能な状態となる。 When the drain valve 42 is in the closed state, the controller 52 opens the supply valve 33 from the closed state to the open state with a slight delay or almost at the same time (see step S6 in FIG. 3 and FIG. 4). ). Also, carbon dioxide gas is supplied to the melting module 30 by opening the air supply valve 36. As a result, the treatment liquid containing carbon dioxide again flows through the primary supply pipe 32 and is supplied to each of the filters 31a to 31d (see FIG. 4). In other words, the processing liquid supply unit 3 can supply the processing liquid to the processing unit 2.
　以上のように、本実施形態の基板処理装置１によると、処理液供給ユニット３において、供給バルブ３３が閉鎖され（ステップＳ２）、排液バルブ４２が開放される（ステップＳ３）。これにより、溶解モジュール３０を通過した処理液中のパーティクル量を低減することができる。また、フィルタ３１ａ～３１ｄよりも一次側（すなわち、処理液の供給源側）において、処理液を排出できる。したがって、溶解モジュール３０、一次側供給配管３２またはそれ以外の発塵源で発生したパーティクルが、フィルタ３１ａ～３１ｄを通ることなく、外部に排出される。この場合、フィルタ３１ａ～３１ｄの一次側で発生したパーティクルを多く含む処理液が、フィルタ３１ａ～３１ｄを通過することを低減できる。これにより、フィルタ３１ａ～３１ｄの長寿命化を図ることができる。 As described above, according to the substrate processing apparatus 1 of the present embodiment, in the processing liquid supply unit 3, the supply valve 33 is closed (step S2), and the drain valve 42 is opened (step S3). Thereby, the amount of particles in the processing liquid that has passed through the dissolution module 30 can be reduced. Further, the processing liquid can be discharged on the primary side (that is, on the supply side of the processing liquid) from the filters 31a to 31d. Accordingly, particles generated in the melting module 30, the primary supply pipe 32, or other dust generation sources are discharged outside without passing through the filters 31a to 31d. In this case, it is possible to reduce the treatment liquid containing many particles generated on the primary side of the filters 31a to 31d from passing through the filters 31a to 31d. Thereby, the lifetime of the filters 31a to 31d can be extended.
　また、フィルタ３１ａ～３１ｄの一次側で多くのパーティクルを含む処理液を排出できるため、そのパーティクルを含む処理液が、フィルタ３１ａ～３１ｄの二次側へ拡散するリスクを低減し得る。 Further, since the processing liquid containing many particles can be discharged on the primary side of the filters 31a to 31d, the risk that the processing liquid containing the particles diffuses to the secondary side of the filters 31a to 31d can be reduced.
　また、パーティクル測定部５１によって測定されるパーティクル量に基づき排液処理を行う場合には、高濃度のパーティクルを含む処理液がフィルタ３１ａ～３１ｄを通過することを適切に抑制できる。また、パーティクルを多く含む処理液がウエハＷの処理に使用されることを抑制できる。また、排液処理が余計に行われることを抑制できる。 Further, when the draining process is performed based on the amount of particles measured by the particle measuring unit 51, it is possible to appropriately suppress the processing liquid containing high concentration particles from passing through the filters 31a to 31d. Further, it is possible to prevent the processing liquid containing a large amount of particles from being used for processing the wafer W. Moreover, it can suppress that drainage processing is performed excessively.
　＜２．　変形例＞
　以上、実施形態について説明してきたが、本発明は上記のようなものに限定されるものではなく、様々な変形が可能である。 <2. Modification>
Although the embodiment has been described above, the present invention is not limited to the above, and various modifications are possible.
　例えば、パーティクル測定部５１が測定するパーティクル量について、予め、溶解モジュール３０などのパーツを保守・交換する目安となるメンテナンス基準値が設定されてもよい。具体的には、パーティクル量が所定のメンテナンス基準値を超えている場合、制御部５２が、出力装置（表示装置、印刷装置またはランプなど）によって外部に通知を出力するようにしてもよい。外部に通知がなされることにより、作業者は、溶解モジュール３０などのパーツの保守・交換時期を適切に認知し得る。 For example, for the amount of particles measured by the particle measuring unit 51, a maintenance reference value that serves as a guideline for maintaining and exchanging parts such as the melting module 30 may be set in advance. Specifically, when the amount of particles exceeds a predetermined maintenance reference value, the control unit 52 may output a notification to the outside by an output device (display device, printing device, lamp, or the like). By notifying the outside, the worker can appropriately recognize the maintenance / replacement timing of parts such as the melting module 30.
　また、供給バルブ３３および排液バルブ４２は、上記実施形態のように、制御部５２の制御下で電動開閉可能に構成されてもよいが、少なくとも一方を手動で開閉可能に構成されてもよい。ただし、自動で開閉制御することにより、作業者負担を軽減できる。 Further, the supply valve 33 and the drain valve 42 may be configured to be electrically openable / closable under the control of the control unit 52 as in the above embodiment, but at least one of them may be configured to be manually openable / closable. . However, the operator's burden can be reduced by automatically controlling opening and closing.
　また、切替部として供給バルブ３３および排液バルブ４２を一次側供給配管３２に介装する代わりに、これらの機能を兼ね備える三方バルブを利用することも考えられる。この場合、一次側供給配管３２における排液配管４１につながる分岐部Ｄ２に三方バルブを設けるとよい。 Further, instead of interposing the supply valve 33 and the drain valve 42 in the primary side supply pipe 32 as a switching unit, it is conceivable to use a three-way valve having these functions. In this case, a three-way valve may be provided at the branch portion D2 connected to the drainage pipe 41 in the primary side supply pipe 32.
　処理液供給ユニット３が供給する処理液は、炭素ガスを溶解させたものに限られず、たとえば窒素ガスなどの他の種類のガスを溶解させたものとしてもよい。また、炭酸水または窒素ガスなどの他の種類のガスを溶解させた液体に、薬液などの他の液体を混合させたものを処理液としてもよい。 The treatment liquid supplied by the treatment liquid supply unit 3 is not limited to the one in which carbon gas is dissolved, but may be one in which other types of gases such as nitrogen gas are dissolved. Further, a liquid obtained by mixing another liquid such as carbonated water or nitrogen gas with another liquid such as a chemical liquid may be used as the treatment liquid.
　上記実施形態の基板処理装置１は、処理ユニット２にてウエハＷを１枚ずつ処理液で処理する枚葉式の装置である。しかしながら、本発明は、複数のウエハＷを同時に複数枚のウエハＷを処理液で処理するバッチ式の処理ユニットを備えた基板処理装置にも適用可能である。 The substrate processing apparatus 1 of the above embodiment is a single-wafer type apparatus that processes the wafers W one by one with the processing liquid in the processing unit 2. However, the present invention is also applicable to a substrate processing apparatus including a batch type processing unit that processes a plurality of wafers W simultaneously with a processing liquid.
　また、前述の実施形態では、処理対象となる基板としてウエハＷを取り上げたが、ウエハＷに限らず、例えば、液晶表示装置用ガラス基板、プラズマディスプレイ用基板、ＦＥＤ用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、太陽電池用基板などの他の種類の基板が処理対象とされてもよい。 In the above-described embodiment, the wafer W is taken up as a substrate to be processed. However, the substrate is not limited to the wafer W. For example, a glass substrate for a liquid crystal display device, a plasma display substrate, an FED substrate, an optical disk substrate, a magnetic substrate Other types of substrates such as a disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, and a solar cell substrate may be processed.
　この発明は詳細に説明されたが、上記の説明は、すべての局面において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。上記各実施形態および各変形例で説明した各構成は、相互に矛盾しない限り適宜組み合わせたり、省略したりすることができる。 Although the present invention has been described in detail, the above description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that countless variations that are not illustrated can be envisaged without departing from the scope of the present invention. The configurations described in the above embodiments and modifications can be appropriately combined or omitted as long as they do not contradict each other.
　１　基板処理装置
　２　処理ユニット（処理部）
　３　処理液供給ユニット（処理液供給装置）
　３０　溶解モジュール
　３１ａ～３１ｄ　フィルタ
　３２　一次側供給配管
　３２０ａ～３２０ｄ　分岐配管
　３３　供給バルブ
　３４ａ～３４ｄ　二次側供給配管
　３５　ポンプ
　４１　排液配管
　４２　排液バルブ
　５１　パーティクル測定部
　５２　制御部
　９０　排液タンク（排液部）
　９２　排出配管
　Ｄ１，Ｄ２　分岐部（接続部分）
　Ｗ　ウエハ DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Processing unit (processing part)
3 Processing liquid supply unit (Processing liquid supply device)
30 Melting module 31a to 31d Filter 32 Primary side supply pipe 320a to 320d Branch pipe 33 Supply valve 34a to 34d Secondary side supply pipe 35 Pump 41 Drainage pipe 42 Drainage valve 51 Particle measuring section 52 Control section 90 Drainage tank ( Drainage part)
92 Discharge piping D1, D2 Branch (connection part)
W wafer

Claims (7)

  1. 　処理液を供給する処理液供給装置であって、
    　処理液の原液に気体を溶解させる溶解モジュールと、
    　その一方端が前記溶解モジュールの二次側に接続されている一次側供給配管と、
    　前記一次側供給配管の他方端に接続され、前記処理液を濾過するフィルタと、
    　前記フィルタの二次側に接続され、前記フィルタを通過した前記処理液が通過する流路を形成する二次側供給配管と、
    　前記一次側供給配管に接続されており、前記処理液を排液部に送る排液配管と、
    　前記一次側供給配管に設けられ、前記溶解モジュールと前記フィルタとが連通する状態と、前記溶解モジュールと前記排液部とが連通する状態との間で切り替える切替部と、
    　前記切替部の一次側に設けられ、前記一次側供給配管を通過する前記処理液中のパーティクル量を測定するパーティクル測定部と、
    　前記パーティクル測定部によって測定された前記パーティクル量に応じて、前記切替部による切替動作を制御する制御部と、
    を備える、処理液供給装置。     A processing liquid supply device for supplying a processing liquid,
    A dissolution module that dissolves gas in the stock solution of the processing solution;
    A primary-side supply pipe whose one end is connected to the secondary side of the melting module;
    A filter connected to the other end of the primary supply pipe and filtering the treatment liquid;
    A secondary side supply pipe connected to the secondary side of the filter and forming a flow path through which the processing liquid that has passed through the filter passes;
    A drainage pipe connected to the primary side supply pipe and sending the treatment liquid to a drainage section;
    A switching unit that is provided in the primary supply pipe and switches between a state in which the dissolution module and the filter communicate with each other and a state in which the dissolution module and the drainage unit communicate with each other;
    A particle measuring unit which is provided on the primary side of the switching unit and measures the amount of particles in the processing liquid passing through the primary side supply pipe;
    In accordance with the amount of particles measured by the particle measuring unit, a control unit that controls a switching operation by the switching unit;
    A processing liquid supply apparatus comprising:
  2. 　請求項１の処理液供給装置であって、
    　前記パーティクル測定部は、前記一次側供給配管における前記排液配管が接続された部分よりも一次側を通過する前記処理液中の前記パーティクル量を測定する、処理液供給装置。     The processing liquid supply apparatus according to claim 1,
    The particle measurement unit is a treatment liquid supply apparatus that measures the amount of particles in the treatment liquid that passes through a primary side of a portion of the primary supply pipe that is connected to the drainage pipe.
  3. 　請求項１または請求項２の処理液供給装置であって、
    　前記切替部は、
    　前記一次側供給配管に介装され、前記一次側供給配管内の流路を開閉する供給バルブと、
    　前記排液配管に介装され、前記排液配管内の流路を開閉する排液バルブと、
    を備え、
    　前記制御部は、前記供給バルブおよび前記排液バルブの開閉動作を制御する、処理液供給装置。     The processing liquid supply apparatus according to claim 1 or 2,
    The switching unit is
    A supply valve that is interposed in the primary side supply pipe and opens and closes a flow path in the primary side supply pipe;
    A drainage valve interposed in the drainage pipe and opening and closing a flow path in the drainage pipe;
    With
    The control unit is a processing liquid supply device that controls opening and closing operations of the supply valve and the drain valve.
  4. 　請求項３の処理液供給装置であって、
    　前記制御部は、前記供給バルブを閉鎖しかつ前記排液バルブを開放した状態で、前記パーティクル測定部により測定される前記パーティクル量に応じて、出力装置により外部に通知を出力する、処理液供給装置。     The processing liquid supply apparatus according to claim 3, wherein
    The control unit supplies a processing liquid supply to the outside by an output device according to the amount of particles measured by the particle measuring unit in a state where the supply valve is closed and the drain valve is opened. apparatus.
  5. 　請求項３または請求項４の処理液供給装置であって、
    　前記一次側供給配管は前記切替部の二次側において複数の分岐配管に分岐しており、その複数の分岐配管各々に１つの前記フィルタがそれぞれ接続されている、処理液供給装置。     The processing liquid supply apparatus according to claim 3 or claim 4,
    The processing liquid supply apparatus, wherein the primary side supply pipe is branched into a plurality of branch pipes on the secondary side of the switching unit, and one filter is connected to each of the plurality of branch pipes.
  6. 　基板を処理する基板処理装置であって、
    　請求項１から請求項５のいずれか１項の処理液供給装置と、
    　前記処理液供給装置の前記フィルタで濾過された前記処理液で基板を処理する処理部と、
    を備える、基板処理装置。     A substrate processing apparatus for processing a substrate,
    The processing liquid supply apparatus according to any one of claims 1 to 5,
    A processing unit for processing the substrate with the processing liquid filtered by the filter of the processing liquid supply apparatus;
    A substrate processing apparatus comprising:
  7. 　処理液を供給する処理液供給方法であって、
    （ａ）溶解モジュールによって処理液の原液に気体を溶解させる工程と、
    （ｂ）前記気体が溶解された前記処理液を前記溶解モジュールから一次側供給配管に供給する工程と、
    （ｃ）前記一次側供給配管を通過した前記処理液を前記一次側供給配管に接続されたフィルタで濾過する工程と、
    （ｄ）前記一次側供給配管を通過する前記処理液中のパーティクル量を測定する工程と、
    （ｅ）前記工程（ｄ）にて測定された前記パーティクル量に応じて、前記工程（ｃ）における前記フィルタへの前記処理液の供給を停止するとともに、前記溶解モジュールを通過した前記処理液を前記一次側供給配管から分岐する排液配管を通じて排液部に送る工程と、
    を含む、処理液供給方法。     A process liquid supply method for supplying a process liquid,
    (A) a step of dissolving the gas in the stock solution of the processing solution by the dissolution module;
    (B) supplying the treatment liquid in which the gas is dissolved from the dissolution module to a primary supply pipe;
    (C) filtering the treatment liquid that has passed through the primary side supply pipe with a filter connected to the primary side supply pipe;
    (D) measuring the amount of particles in the processing liquid passing through the primary supply pipe;
    (E) The supply of the processing liquid to the filter in the step (c) is stopped according to the amount of particles measured in the step (d), and the processing liquid that has passed through the dissolution module is removed. Sending to the drainage part through the drainage pipe branched from the primary side supply pipe;
    A process liquid supply method comprising:
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