WO2019179228A1 - Led灯丝结构及基于其的led照明灯 - Google Patents

Led灯丝结构及基于其的led照明灯 Download PDF

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Publication number
WO2019179228A1
WO2019179228A1 PCT/CN2019/072024 CN2019072024W WO2019179228A1 WO 2019179228 A1 WO2019179228 A1 WO 2019179228A1 CN 2019072024 W CN2019072024 W CN 2019072024W WO 2019179228 A1 WO2019179228 A1 WO 2019179228A1
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WO
WIPO (PCT)
Prior art keywords
led chip
led
material layer
filament structure
color temperature
Prior art date
Application number
PCT/CN2019/072024
Other languages
English (en)
French (fr)
Inventor
时军朋
林振端
徐宸科
张平
Original Assignee
厦门市三安光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 厦门市三安光电科技有限公司 filed Critical 厦门市三安光电科技有限公司
Publication of WO2019179228A1 publication Critical patent/WO2019179228A1/zh
Priority to US16/948,441 priority Critical patent/US11538965B2/en

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00—Combination of light sources
    • F21Y2113/10—Combination of light sources of different colours
    • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Definitions

  • the present invention belongs to the technical field of lighting devices, and in particular, to an LED filament structure and an LED lighting lamp.
  • the conventional LED bulb uses a flat PCB (Printed Circuit Board) circuit board to seal the LED package, and a heat sink is disposed under the PCB for heat dissipation.
  • PCB Printed Circuit Board
  • LED bulbs cannot achieve 360-degree full-circumference illumination.
  • LED bulbs and traditional incandescent lamps have different appearances and are not aesthetically pleasing; production processes and incandescent lamps are very different, and incandescent lamps manufacturers also There is no condition for production.
  • the filament lamp In order to get closer to the conventional tungsten filament lamp, to achieve full-circumference, and to facilitate production, the filament lamp has become the main stream in recent years.
  • the lighting effects of filament lamps and incandescent lamps are also significantly different: 1) the filament of the filament lamp is much thicker than the tungsten filament; 2) the filament of the filament lamp is yellow or close to yellow, which is different from the color of the incandescent filament;
  • the LED filament lamp structure is closer to the incandescent lamp, thereby achieving an effective change in the color temperature and brightness of the filament lamp. necessary.
  • an object of the present invention is to provide a Lm) filament structure and an LED illumination lamp therefor, which are used to solve the problem that the color temperature and brightness of the LED filament lamp structure in the prior art cannot be solved. Achieve convenient and effective changes and other issues.
  • the present invention provides an LED filament structure, the LED lamp
  • the wire structure includes:
  • an LED chip assembly is disposed on the substrate, the LED chip assembly includes at least one first LED chip and at least one second LED chip, and a spacing between adjacent LED chips;
  • a fluorescent material layer is disposed on the substrate, and the fluorescent material layer covers each of the LED chips;
  • a filter material layer covers a surface of any one of the first LED chip and the second LED chip, and when the LED filament structure is just lit, the filter The material layer is opaque, such that light emitted by the LED chip not covering the filter material layer excites the fluorescent material layer to emit light of a first color temperature; and the preset time after the LED filament structure is lit, the The layer of the filter material gradually becomes transparent, such that the light emitted by the first LED chip and the second LED chip can excite the layer of the fluorescent material to emit light of a second color temperature, wherein the second color temperature and the color The first color temperature is different.
  • the first LED chip has an emission wavelength between 440 nm and 460 nm
  • the second LED chip has an emission wavelength between 470 nm and 550 nm.
  • the first LED chip has an emission wavelength between 440 nm and 460 nm
  • the second LED chip has an emission wavelength between 470 nm and 550 nm.
  • a material layer covers a surface of the second LED chip, and when the LED filament structure is just lit, the first LED chip excites the fluorescent material layer to emit light, and the LED filament structure is illuminated after the preset time The first LED chip and the second LED chip respectively excite the fluorescent material layer to emit light, and the second color temperature is lower than the first color temperature.
  • the first LED chip has an emission wavelength between 380 nm and 430 nm
  • the second LED chip has an emission wavelength between 440 nm and 460 nm.
  • the first LED chip has an emission wavelength between 380 nm and 430 nm
  • the second LED chip has an emission wavelength between 440 nm and 460 nm.
  • a material layer covers a surface of the second LED chip, and when the LED filament structure is just lit, the first LED chip excites the fluorescent material layer to emit light, and the LED filament structure is illuminated after the preset time
  • the first LED chip and the second LED chip respectively excite the fluorescent material layer to emit light, and the second color temperature is higher than the first color temperature.
  • the transmittance of the filter material layer increases with the current applied to the LED filament structure. Large and high; the preset time becomes shorter as the current applied to the LED filament structure increases.
  • the first LED chip and the second LED chip are both disposed on the same side of the substrate, and the first LED chip and the second LED chip are Alternately spaced
  • the fluorescent material layer comprises a glue layer and a phosphor
  • the material of the glue layer comprises at least one of a silica gel and an epoxy resin
  • the phosphor comprises at least red powder and green color. powder.
  • the filter material layer includes any one of a layer of a photo-changeable material and a layer of a thermally variable material.
  • the light at the first color temperature is displayed as a warm color
  • the light at the second color temperature is displayed as a cool color; or the light at the first color temperature is displayed as a cool color.
  • the light at the second color temperature is displayed as a warm color.
  • the present invention also provides an LED filament structure, the LED filament structure comprising:
  • the LED chip assembly is disposed on the substrate, the LED chip assembly includes at least one first LED chip and at least one second LED chip, and the adjacent LED chips have a spacing therebetween;
  • a fluorescent material layer is disposed on the substrate, and the fluorescent material layer covers each of the LED chips;
  • a filter material layer the filter material layer covering the first LED chip and the second LED chip
  • the absorption peak of the filter material layer is equal to the emission wavelength of one of the first LED chip and the second LED chip to absorb the corresponding LED chip.
  • the emitted light is such that light emitted by the LED chip having an absorption peak different from the filter material layer excites the fluorescent material layer to emit light of a first color temperature; and the preset time after the LED filament structure is lit, the The absorption peak of the filter material layer is gradually disappeared or red-shifted, so that the light emitted by the first LED chip and the second LED chip can excite the fluorescent material layer to emit light of a second color temperature, wherein the The two color temperature is different from the first color temperature.
  • the first LED chip has an emission wavelength between 440 nm and 460 nm
  • the second LED chip has an emission wavelength between 470 nm and 550 nm
  • the LED filament When the structure is just lit, the absorption peak of the filter material layer is between 440 nm and 460 nm, the second LED chip excites the fluorescent material layer to emit light, and the LED filament structure is illuminated after the preset time.
  • the first LED chip and the second LED chip respectively excite the fluorescent material layer to emit light, and the second color temperature is higher than the first color temperature.
  • the first LED chip has an emission wavelength between 440 nm and 460 nm
  • the second LED chip has an emission wavelength between 470 nm and 550 nm
  • the LED filament When the structure is just lit, the absorption peak of the filter material layer is between 470 nm and 550 nm, the first LED chip excites the fluorescent material layer to emit light, and the LED filament structure is illuminated after the preset time.
  • the first LED chip and the second LED chip respectively excite the fluorescent material layer to emit light, and the second color temperature is lower than the first color temperature.
  • the first LED chip has an emission wavelength between 380 nm and 430 nm
  • the second LED chip has an emission wavelength between 440 nm and 460 nm
  • the LED filament When the structure is just lit, the absorption peak of the filter material layer is between 380 nm and 430 nm, the second LED chip excites the fluorescent material layer to emit light, and the LED filament structure is illuminated after the preset time.
  • the first LED chip and the second LED chip respectively excite the fluorescent material layer to emit light, and the second color temperature is lower than the first color temperature.
  • the first LED chip has an emission wavelength between 380 nm and 430 nm
  • the second LED chip has an emission wavelength between 440 nm and 460 nm.
  • the absorption peak of the material layer is between 440 nm and 460 nm.
  • the transmittance of the filter material layer increases with the current applied to the LED filament structure. Large and high; the preset time becomes shorter as the current applied to the LED filament structure increases.
  • the first LED chip and the second LED chip are both disposed on the same side of the substrate, and the first LED chip and the second LED chip are Alternately spaced
  • the fluorescent material layer comprises a glue layer and a phosphor
  • the material of the glue layer comprises at least one of a silica gel and an epoxy resin
  • the phosphor comprises at least red powder and green color. powder.
  • the filter material layer includes any one of a layer of a photo-changeable material and a layer of a thermally variable material.
  • the light at the first color temperature is displayed as a warm color
  • the light at the second color temperature is displayed as a cool color; or the light at the first color temperature is displayed as a cool color.
  • the light at the second color temperature is displayed as a warm color.
  • the present invention also provides an LED illumination lamp comprising the LED filament structure according to any of the above aspects.
  • the LED filament structure of the present invention and the LED illumination lamp therewith have the following beneficial effects
  • the LED filament structure of the present invention interacts with the first LED chip, the second LED chip and the filter material layer which can finally emit light of different color temperatures by exciting different phosphors, through environmental changes such as light, The change of heat and the like, and the change of the color temperature and brightness of the filament lamp is realized, so that the LED filament structure of the invention and the LED illumination lamp based thereon are closer to the incandescent lamp, the structure is simple, easy to implement, and the production process and the incandescent lamp are close to , conducive to production.
  • FIG. 1 shows a schematic view of a LH) filament structure covering a surface of a first LED chip of a filter material layer of the present invention.
  • FIG. 2 shows a schematic view of a LH) filament structure covering a surface of a second LED chip of the filter material layer of the present invention.
  • FIG. 3 shows a schematic view of an LED filament structure covering the surface of two LED chips of the filter material layer of the present invention.
  • FIG. 4 shows a spectrum of red light excitation.
  • FIG. 5 shows a spectrum of excitation excited by green light.
  • 100 a substrate; 101: a first LED chip; 102: a second LED chip; 103: a fluorescent material layer;
  • FIG. 1 to FIG. 5 Please refer to FIG. 1 to FIG. 5. It should be noted that the illustrations provided in the embodiments merely illustrate the basic concept of the present invention in a schematic manner, and only the components related to the present invention are shown in the drawings, rather than the number and shape of components in actual implementation. Dimensional drawing, the form, number and proportion of each component in actual implementation can be a random change, and the component layout form may be more complicated.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the present invention provides an LED filament structure, and the LED filament structure includes:
  • the LED chip assembly is disposed on the substrate 100, the LED chip assembly includes at least one first L ED chip 101 and at least one second LED chip 102, and the adjacent LED chips have a spacing therebetween; a fluorescent material layer 103 is disposed on the substrate 100, and the fluorescent material layer 103 covers each of the LEs D chip;
  • the filter material layer 104 covers a surface of at least one of the first LED chip 101 and the second LED chip 102.
  • the filter material layer 104 Having an absorption state, such that one of the first LED chip 101 and the second LED chip 102 excites the fluorescent material layer 103 to emit light of a first color temperature, and the LED filament structure is illuminated after a preset time
  • the filter material layer 104 has another absorption state, such that the first LED chip 101 and the second LED chip 102 both excite the fluorescent material layer 103 to emit light of a second color temperature, wherein the first The two color temperature is different from the first color temperature.
  • the first LED chip 101 and the second LED chip 102 are disposed on the same side of the substrate 100, and the first LED chip 101 and the second LED chip 102 are The line types are alternately arranged at equal intervals.
  • the present invention provides an LED filament structure comprising a substrate 100.
  • the substrate 100 may be a strip-shaped transparent ceramic substrate, and the substrate preferably has good heat transfer properties.
  • an LED chip assembly is disposed on the substrate 100, wherein the number of the first LED chip 101 and the second LED chip 102 in the LED chip assembly is set according to actual application requirements, wherein Different LED chips (such as the first LED chip and the second LED chip) have different emission wavelengths, and can excite the fluorescent material layer 103 to emit light of different color temperature tones, and the adjacent LED chips are in a non-contact manner.
  • the first LED chips 101 are not in contact with each other, and the second LED chips 102 are not in contact with each other, and the first LED chip 101 and the second LED chip 102 are not in contact with each other.
  • the first LED chip 101 and the second LED chip 102 are disposed on the same surface of the substrate 100, that is, the light emitting direction is the same, and the two are arranged at alternate equidistant intervals, and are linear single rows. Arranged to ensure uniformity of illumination and color temperature and brightness, and to obtain good visual effects. In addition, the distance between adjacent LED chips can be maximized, so that each LED chip can be compared. The large heat dissipation space improves the heat dissipation effect of the light-emitting area as a whole. Further, the LED chips are preferably electrically connected by gold wires. Of course, the manner of realizing the electrical connection may also be other methods well known to those skilled in the art. , not limited to this.
  • the fluorescent material layer 103 includes a glue layer and a phosphor
  • the material of the glue layer includes at least one of a silica gel and an epoxy resin
  • the phosphor includes at least a red powder and a green powder.
  • the fluorescent material layer 103 is encapsulated on the substrate 100 and the first LED chip 101, Preferably, the fluorescent material layer 103 is disposed around the substrate 100, that is, the fluorescent material layer 103 is disposed on a peripheral side of the substrate 100, and the fluorescent material is further disposed around the second LED chip 102.
  • the layer 103 completely covers all the faces of the LED chips except the one in contact with the substrate, and the adjacent LED chips are separated by the fluorescent material layer 103, and the two of the substrates 100 are The end portion protrudes beyond the fluorescent material layer 103.
  • the fluorescent material layer 103 is prepared by using a glue layer and a phosphor, wherein the glue layer uniformly fixes the phosphor around each of the LED chips, the phosphor and the phosphor
  • the phosphor is a composite powder, such as at least red powder ((Sr x Ca i — x ) AlSiN 3
  • the phosphor may also be an RGB three-color composite powder, or may be different in color temperature according to actual needs.
  • Other phosphor compositions having a change in color tone are not specifically limited herein.
  • the filter material layer 104 includes any one of a layer of a photo-changeable material and a layer of a thermally variable material.
  • the light at the first color temperature is displayed as a warm color, and the light at the second color temperature is displayed as a cool color; or the light at the first color temperature is displayed as a cool color, and the light at the second color temperature is light Displayed in warm tones.
  • the filter material layer 104 is disposed on a surface of the LED chip required to cover other surfaces of the LE D chip except the surface in contact with the substrate, and the filter material layer 104 Located between the LED chip and the fluorescent material layer 103.
  • the filter material layer 104 comprises a two-state or multi-state and variable reversible filter material, which may be a thermally or photo-induced material, that is, the filter material layer 104 is exposed to light of a certain wavelength or The filter material layer 104 undergoes a state (absorption state) change when heated, has different functions of light absorption and light blocking, and the like, and can pass through the filter material layer 104 and the first LED chip having different excitation waves.
  • the second LED chip cooperates to cause the LED filament structure to exhibit light of different color temperatures when it is just lit and after the preset time is illuminated, wherein, in the preset time period during which the LED filament structure is illuminated, the The filter material layer 104 undergoes different forms of change, thereby having the effect of having different effects on the first LED chip or the second LED chip.
  • the present invention utilizes changes in such an environment, such as light emitted by an LED chip or a change in heat generated by illumination of an LED filament structure, resulting in a change in the morphology (absorption state) of the layer of filter material, thereby achieving a filament lamp
  • the color temperature and brightness change effect for example, the warm color can be changed to a cool color, and the cool color can be changed to a warm color, but it is not limited thereto, and the color temperature hue change can be set according to actual needs, in particular, based on the LED filament structure.
  • the LED lighting can be used as a retro mood light for European pubs.
  • the filter material layer 104 covers any one of the first LED chip 101 and the second LED chip 102.
  • the surface of the filter material layer 104 is opaque when the LED filament structure is just lit.
  • the filter material layer 104 is black to block the light emitted by the LED chip covered by the LED chip.
  • the light emitted by the LED chip of the filter material layer 104 excites the fluorescent material layer 103; the filter material layer 104 gradually becomes transparent within the preset time after the LED filament structure is turned on, so that The light emitted by the first LED chip 101 and the second L ED chip 102 can excite the fluorescent material layer 103
  • the filter material layer 104 is disposed on a surface of a chip, It is disposed on the surface of the first LED chip, and may also be the surface of the second LED chip.
  • the filter material layer 104 is preferably a layer of thermally variable material.
  • the filter The light material layer is black, that is, it exhibits an absorption state, and the black filter material layer blocks the light of the kind of chip covered by the filter material layer, so that the light emitted by the chip is blocked, and the fluorescent material cannot be excited.
  • Layer light emission that is, the light of the first color temperature is a result of the action of the LED chip not covering the filter material layer 104; when the LED filament structure is lit, the filter material layer gradually becomes transparent and gradually changes In another absorption state, the transparent state of the filter material layer is stable after the preset time, and the transparent filter material layer no longer blocks light. At this time, the light emitted by the two LED chips Can excite the fluorescent material layer, that is, the results of the first LED chip and the second light LED chip acting both the second color temperature.
  • the filter material layer may also be a photochromic material layer, such as black when the LED filament structure is not lit or just lit, and the first color temperature light is an LED chip that does not cover the filter material layer.
  • the photochromic material layer gradually becomes transparent, so that the light of the second color temperature has both the first LED chip and the second LED chip. The result of the action.
  • the first LED chip 101 has an emission wavelength between 440 nm and 460 nm
  • the The LED chip 102 has an emission wavelength between 470 nm and 550 nm
  • the filter material layer 104 covers the surface of the first LED chip 101.
  • the second LED chip The first fluorescent chip layer 101 and the second LED chip 102 respectively excite the fluorescent material layer to emit light after the LED filament structure is illuminated for the predetermined time.
  • the second color temperature is higher than the first color temperature.
  • the first LED chip 101 is set to have an emission wavelength between 440 nm and 460 nm, and as shown in FIG. 5, it can excite the green phosphor (green powder) and emit green.
  • the light emitting wavelength of the second LED chip 101 is set to be between 470 nm and 550 nm.
  • the red phosphor (red powder) can be excited to emit red light, wherein the filter material layer 104 is disposed.
  • the filter material layer 104 may include a thermochromic microcapsule containing a heat-sensitive black ODB, a developer bisphenol AF (BFPA), and a solvent, as shown in FIG.
  • the second LED chip 102 excites the red phosphor to emit red light, that is, the light of the first color temperature is light of a low color temperature, and is displayed as a warm color, and the LED filament structure is lit.
  • the first LED chip 101 can also excite the phosphor to emit light, and the green powder emits green light, so that the green powder excitation ratio rises and the whole filament color temperature becomes higher in the light emitted by the LED filament structure.
  • the LED filament structure when the LED filament structure is just lit, only light emitted by one LED chip may cause the entire LED filament structure to emit light.
  • the filter material layer 104 is transparent and stable after the preset time, the two The emitted light of the chip can cause the entire LED filament structure to emit light, thus achieving a gradual increase in the brightness of the entire LED filament structure.
  • the first LED chip 101 has an emission wavelength between 440 nm and 460 nm
  • the second LED chip 102 has an emission wavelength between 470 nm and 550 nm
  • the filter material layer 104 covers On the surface of the second LED chip 102, when the LED filament structure is just lit, the first LED chip 101 excites the fluorescent material layer 103 to emit light, and the LED filament structure illuminates the preset time. Thereafter, the first LED chip 101 and the second LED chip 102 both excite the fluorescent material layer 103 to emit light, and the second color temperature is lower than the first color temperature.
  • the wavelength of the first LED chip 101 is set to be between 440 nm and 460 nm, as shown in FIG. 5, which can excite the green powder to emit green light, and set the second LED.
  • the wavelength of the chip 101 is between 470 nm and 550 nm, as shown in FIG. 4, which can excite the red powder to emit red light, wherein the filter
  • the material layer 104 is disposed on the second LED chip 102.
  • the filter material layer 104 can be a thermochromic material of Chongyu Technology, and the microcapsules are coated with an invisible dye, a color forming agent and a temperature controlling agent, as shown in the figure.
  • the first LED chip 101 excites the green phosphor to emit green light, that is, the light of the first color temperature is light of high color temperature, and is displayed as cool color, the LED filament
  • the second LED chip 102 can also excite the phosphor to emit light, and the red powder is excited to emit red light, so that the red powder excitation ratio increases in the light emitted by the LED filament, and the entire filament color temperature becomes low.
  • the LED filament structure when the LED filament structure is just lit, only light emitted by one LED chip may cause the entire LED filament structure to emit light.
  • the filter material layer 104 is transparent and stable after the preset time, the two The emitted light of the chip can cause the entire LED filament structure to emit light, thus achieving a gradual increase in the brightness of the entire LED filament structure.
  • the first LED chip 101 has an emission wavelength between 380 nm and 430 nm
  • the second LED chip 102 has an emission wavelength between 440 nm and 460 nm
  • the filter material layer 104 covers On the surface of the first LED chip 101, when the LED filament structure is just lit, the second LED chip 102 activates the fluorescent material layer 103 to emit light, and the LED filament structure illuminates the preset time. Thereafter, the first LED chip 101 and the second LED chip 102 both excite the fluorescent material layer 103 to emit light, and the second color temperature is lower than the first color temperature.
  • the wavelength of the first LED chip 101 is set to be between 380 nm and 430 nm.
  • the red powder may be excited to emit red light
  • the second LED chip is disposed.
  • the wavelength of 102 is between 440 nm and 460 nm. As shown in FIG. 5, it can excite the green powder to emit green light.
  • the filter material layer 104 is disposed on the first LED chip 101, as shown in FIG.
  • the second LED chip 102 excites the green phosphor to emit green light, that is, the light of the first color temperature is light of high color temperature, which is displayed as cool color, and the LED filament structure point
  • the first LED chip 101 can also excite the phosphor to emit light, and the red powder is excited to emit red light, so that the red powder excitation ratio rises and the whole filament color temperature becomes lower in the light emitted by the LED filament.
  • the LED filament structure when the LED filament structure is just lit, only light emitted by one LED chip may cause the entire LED filament structure to emit light.
  • the filter material layer 104 is transparent and stable after the preset time, the two The emitted light of the chip can cause the entire LED filament structure to emit light, thus achieving a gradual increase in the brightness of the entire LED filament structure.
  • the first LED chip 101 has an emission wavelength between 380 nm and 430 nm
  • the second LED chip 102 has an emission wavelength between 440 nm and 460 nm.
  • the filter material layer 104 covers On the surface of the second LED chip 102, when the LED filament structure is just lit, the first LED chip 101 excites the fluorescent material layer 103 to emit light, and the LED filament structure illuminates the preset time. Thereafter, the first LED chip 101 and the second LED chip 102 both excite the fluorescent material layer 103 to emit light, and the second color temperature is higher than the first color temperature.
  • the wavelength of the first LED chip 101 is set to be between 380 nm and 430 nm.
  • the red powder may be excited to emit red light
  • the second LED chip is disposed.
  • the wavelength of 102 is between 440 nm and 460 nm. As shown in FIG. 5, it can excite the green powder to emit green light.
  • the filter material layer 104 is disposed on the second LED chip 102, as shown in FIG.
  • the first LED chip 101 excites the red phosphor to emit red light, that is, the light of the first color temperature is light of a low color temperature, which is displayed as a warm color, and the LED filament structure point
  • the second LED chip 102 can also emit phosphor light to excite the green powder to emit green light, so that the green powder excitation ratio of the light emitted by the LED filament increases, and the entire filament color temperature becomes high.
  • the LED filament structure when the LED filament structure is just lit, only light emitted by one LED chip may cause the entire LED filament structure to emit light.
  • the filter material layer 104 is transparent and stable after the preset time, the two The emitted light of the chip can cause the entire LED filament structure to emit light, thus achieving a gradual increase in the brightness of the entire LED filament structure.
  • the transmittance of the filter material layer 104 becomes higher as the current applied to the LED filament structure increases.
  • the preset time becomes shorter as the current applied to the LED filament structure increases.
  • the present invention also provides an LED illumination lamp, comprising the LED filament structure according to any one of the above aspects, the number of the LED filament structure and the installation with the LED illumination lamp.
  • the manner is set according to the manner and actual needs well known to those skilled in the art.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1
  • the present invention provides an LED filament structure, and the LED filament structure includes:
  • the LED chip assembly is disposed on the substrate 100, the LED chip assembly includes at least one first L ED chip 101 and at least one second LED chip 102, and a spacing between adjacent LED chips;
  • a fluorescent material layer 103 is disposed on the substrate 100, and the fluorescent material layer 103 covers each of the LE D chips;
  • the filter material layer 104 covers a surface of at least one of the first LED chip 101 and the second LED chip 102.
  • the filter material layer 104 Having an absorption state, such that one of the first LED chip 101 and the second LED chip 102 excites the fluorescent material layer 103 to emit light of a first color temperature, and the LED filament structure is illuminated after a preset time
  • the filter material layer 104 has another absorption state, such that the first LED chip 101 and the second LED chip 102 both excite the fluorescent material layer 103 to emit light of a second color temperature, wherein the first The two color temperature is different from the first color temperature.
  • the first LED chip 101 and the second LED chip 102 are disposed on the same side of the substrate 100, and the first LED chip 101 and the second LED chip 102 are The line types are alternately arranged at equal intervals.
  • the present invention provides an LED filament structure including a substrate 100.
  • the substrate 100 may be a strip-shaped transparent ceramic substrate, and the substrate preferably has good heat transfer properties.
  • an LED chip assembly is disposed on the substrate 100, wherein the number of the first LED chip 101 and the second LED chip 102 in the LED chip assembly is set according to actual application requirements, wherein Different LED chips (such as the first LED chip and the second LED chip) have different emission wavelengths, and can excite the fluorescent material layer 103 to emit light of different color temperature tones, and the adjacent LED chips are in a non-contact manner.
  • the first LED chips 101 are not in contact with each other, and the second LED chips 102 are not in contact with each other, and the first LED chip 101 and the second LED chip 102 are not in contact with each other.
  • the first LED chip 101 and the second LED chip 102 are disposed on the substrate 100.
  • the same side, that is, the light-emitting direction is the same, and the two are arranged alternately at equal intervals, and are arranged in a single line, thereby ensuring uniformity of illumination, color temperature and brightness, and obtaining good visual effects.
  • the maximum degree can be obtained.
  • the electrical connection of course, the manner in which the electrical connection is made can also be other means well known to those skilled in the art, and is not limited thereto.
  • the fluorescent material layer 103 includes a glue layer and a phosphor
  • the material of the glue layer includes at least one of a silica gel and an epoxy resin
  • the phosphor includes at least a red powder and a green powder.
  • the fluorescent material layer 103 is encapsulated around the substrate 100 and the first LED chip 101 and the second LED chip 102.
  • the fluorescent material layer 103 surrounds the substrate.
  • 100 is disposed, that is, the fluorescent material layer 103 is disposed on the peripheral side of the substrate 100, and the fluorescent material layer 103 completely covers all the surfaces of the LED chips except the one in contact with the substrate.
  • the adjacent LED chips are separated by the fluorescent material layer 103. Further, both end portions of the substrate 100 protrude outside the fluorescent material layer 103.
  • the fluorescent material layer 103 is prepared by using a glue layer and a phosphor, wherein the glue layer uniformly fixes the phosphor around each of the LED chips, the phosphor and the phosphor
  • the first LED chip and the second LED chip are matched to ultimately emit light of different color temperatures.
  • the phosphor is a composite powder, such as at least including red powder ((Sr x Ca iJAlSiN s
  • the phosphor may also be an RGB three-color composite powder, or may be different in color temperature according to actual needs.
  • Other phosphor compositions having a change in color tone are not specifically limited herein.
  • the filter material layer 104 includes any one of a layer of a photo-varying material and a layer of a thermally-induced material.
  • the light at the first color temperature is displayed as a warm color
  • the light at the second color temperature is displayed as a cool color
  • the light at the first color temperature is displayed as a cool color
  • the light at the second color temperature is light Displayed in warm tones.
  • the filter material layer 104 is disposed on a surface of the LED chip required to cover the LE
  • the D-chip has a surface other than the surface in contact with the substrate, and the filter material layer 104 is located between the LED chip and the fluorescent material layer 103.
  • the filter material layer 104 comprises a two-state or multi-state and variable reversible filter material, which may be a thermally or photo-induced material, that is, the filter material layer 104 is exposed to light of a certain wavelength or The filter material layer 104 undergoes a state (absorption state) change when heated, has different functions of light absorption and light blocking, and the like, and can pass through the filter material layer 104 and the first LED chip having different excitation waves.
  • the second LED chip cooperates to cause the LED filament structure to exhibit light of different color temperatures when it is just lit and after the preset time is illuminated, wherein, in the preset time period during which the LED filament structure is illuminated, the The filter material layer 104 undergoes different forms of change, thereby having the effect of having different effects on the first LED chip or the second LED chip.
  • the present invention utilizes changes in such an environment, such as light emitted by an LED chip or a change in heat generated by illumination of an LED filament structure, resulting in a change in the morphology (absorption state) of the filter material layer, thereby achieving a filament lamp
  • the color temperature and brightness change effect for example, the warm color can be changed to a cool color, and the cool color can be changed to a warm color, but it is not limited thereto, and the color temperature hue change can be set according to actual needs, in particular, based on the LED filament structure.
  • the LED lighting can be used as a retro mood light for European pubs.
  • the filter material layer 104 covers the surfaces of the first LED chip 101 and the second LED chip 102, and the LED When the filament structure is just lit, the absorption peak of the filter material layer 104 is equal to the emission wavelength of one of the first LED chip 101 and the second LED chip 102 to absorb the corresponding LED chip.
  • the light of the LED chip is unable to excite the fluorescent material layer to emit light, and only the light emitted by another LED chip having an emission wavelength different from the absorption peak of the light-proof material layer can excite the fluorescent material layer to emit light, and the LED filament structure
  • the absorption peak of the filter material layer 104 gradually disappears or red shifts during the preset time after the lighting, so that the light emitted by the first LED chip 101 and the second LED chip 102 can be excited.
  • the present example provides an example of another solution for implementing a color temperature change of a filament structure based on the filter material layer 104, in which the filter material layer 104 is disposed at the first On the surface of the LED chip and the second LED chip, wherein the filter material layer is preferably a thermally variable material, and the filter material layer 104 exhibits an absorption when the LED filament structure is not lit or just lit. State, that is, the filter material layer 104 has an absorption peak whose absorption peak is equal to any one of the two chip emission wavelengths.
  • the light emitted by the chip can be absorbed, so that the light of the first color temperature is the result of light excitation of the fluorescent material layer emitted by the LED chip having a different absorption peak from the filter material layer, and the LED filament structure is lit.
  • the filter material layer 104 is heated to gradually change to another absorption state, and its absorption peak gradually disappears, or the filter material layer is heated, and its absorption peak is gradually red-shifted, which may result in the filter material.
  • the layer 104 no longer absorbs the light emitted by the first LED chip 101, nor does it absorb the light emitted by the second LED chip 102, so that the light of the second color temperature is the result of the interaction of the light emitted by the two chips.
  • the filter material layer 104 may also be a layer of photo-changeable material, such as having an absorption peak when the LED filament structure is not lit or just lighting, and the light of the first color temperature is different from the absorption peak.
  • the layer of the photo-variable material gradually becomes transparent, so that the light of the second color temperature is The result of the action of both the first LED chip and the second LED chip.
  • the first LED chip 101 has an emission wavelength between 440 nm and 460 nm
  • the second LED chip 102 has an emission wavelength between 470 nm and 550 nm
  • the LED filament structure is just lit.
  • the absorption peak of the filter material layer 104 is between 440 nm and 460 nm
  • the second LED chip 102 excites the fluorescent material layer 103 to emit light.
  • the first LED chip 101 and the second LED chip 102 both excite the fluorescent material layer 103 to emit light, and the second color temperature is higher than the first color temperature.
  • the first LED chip 101 is disposed with an emission wavelength between 440 nm and 460 nm, as shown in FIG. 5, which can excite the green powder to emit green light, and set the first The wavelength of the two LED chips 101 is between 470 nm and 550 nm. As shown in FIG. 4, it can excite the red powder to emit red light, wherein the filter material layer 104 covers the surface of the two chips, as shown in FIG. It is shown that the absorption peak of the filter material layer 104 is between 440 nm and 460 nm. At this time, when the LED filament structure is just lit, the light emitted by the first LED chip 101 is absorbed, and the second LED chip 102 is absorbed.
  • the red phosphor Exciting the red phosphor to emit red light, that is, the light of the first color temperature is light of a low color temperature, and is displayed as a warm color.
  • the first LED chip 101 can also excite the phosphor.
  • the green powder When the light is emitted, the green powder is excited to emit green light, so that the light emission rate of the LED filament rises, and the color temperature of the entire filament becomes high.
  • the LED filament structure when the LED filament structure is just lit, only one kind of LED chip emits light, which may cause the whole The LED filament structure emits light.
  • the filter material layer 104 is transparent and stable after the preset time, the light emitted by the two chips can cause the entire LED filament structure to emit light, thereby realizing the gradual brightness of the entire LED filament structure. rise.
  • the first LED chip 101 has an emission wavelength between 440 nm and 460 nm
  • the second LED chip 102 has an emission wavelength between 470 nm and 550 nm
  • the LED filament structure is just lit.
  • the absorption peak of the filter material layer 104 is between 470 nm and 550 nm
  • the first LED chip 101 excites the fluorescent material layer 103 to emit light
  • the LED filament structure is illuminated for the preset time
  • the first LED chip 101 and the second LED chip 102 both excite the fluorescent material layer 103 to emit light
  • the second color temperature is lower than the first color temperature.
  • the first LED chip 101 is set to have an emission wavelength between 440 nm and 460 nm, and as shown in FIG. 5, the green powder may be excited to emit green light, and the first The wavelength of the two LED chips 101 is between 470 nm and 550 nm. As shown in FIG. 4, it can excite the red powder to emit red light, wherein the filter material layer 104 covers the surface of the two chips, and the filter The material layer 104 can adopt the thermochromic material of Chongyu Technology, and the microcapsules are coated with the invisible dye, the color former and the temperature control agent. As shown in FIG. 3, the absorption peak of the filter material layer 104 is between 470 nm and 550 nm.
  • the LED filament structure when the LED filament structure is just lit, the light emitted by the second LED chip 102 is absorbed, and the first LED chip 101 excites the green phosphor to emit green light, that is, the light of the first color temperature is high.
  • the color temperature light is displayed as a cool color.
  • the second LED chip 102 can also excite the phosphor to emit light, and the red powder is excited to emit red light, thereby causing the LED filament to emit light. , red powder Fat ratio increased, the color temperature is low throughout the filament.
  • the LED filament structure when the LED filament structure is just lit, only light emitted by one LED chip may cause the entire LED filament structure to emit light.
  • the filter material layer 104 is transparent and stable after the preset time, the two The emitted light of the chip can cause the entire LED filament structure to emit light, thus achieving a gradual increase in the brightness of the entire LED filament structure.
  • the first LED chip 101 has an emission wavelength between 380 nm and 430 nm
  • the second LED chip 102 has an emission wavelength between 440 nm and 460 nm
  • the LED filament structure is just lit.
  • the absorption peak of the filter material layer 104 is between 380 nm and 430 nm
  • the second LED chip 102 excites the fluorescent material layer 103 to emit light.
  • the first An LED chip 101 and the second LED chip 102 both excite the fluorescent material layer 103 to emit light, and the second color temperature is lower than the first color temperature.
  • the first LED chip 101 is set to have an emission wavelength between 380 nm and 430 nm, as shown in FIG. 4, which can excite the red powder to emit red light, and set the second The wavelength of the LED chip 101 is between 440 nm and 460 nm. As shown in FIG. 5, it can excite the green powder to emit green light, wherein the filter material layer 104 covers the surface of the two chips, as shown in FIG. The absorption peak of the filter material layer 104 is between 380 nm and 430 nm. At this time, when the LED filament structure is just lit, the light emitted by the first LED chip 101 is absorbed, and the second LED chip 102 is removed.
  • the green phosphor to emit green light that is, the light of the first color temperature is a light of high color temperature, which is displayed as a cool color.
  • the first LED chip 101 can also excite the phosphor.
  • the red powder is excited to emit red light, so that the red powder excitation ratio increases in the light emitted from the LED filament, and the entire filament color temperature becomes low.
  • the LED filament structure when the LED filament structure is just lit, only light emitted by one LED chip may cause the entire LED filament structure to emit light.
  • the filter material layer 104 is transparent and stable after the preset time, the two The emitted light of the chip can cause the entire LED filament structure to emit light, thus achieving a gradual increase in the brightness of the entire LED filament structure.
  • the first LED chip 101 has an emission wavelength between 380 nm and 430 nm
  • the second LED chip 102 has an emission wavelength between 440 nm and 460 nm
  • the filter material layer 104 The absorption peak is between 440 nm and 460 nm.
  • the first LED chip 101 is set to have an emission wavelength between 380 nm and 430 nm, as shown in FIG. 4, which can excite the red powder to emit red light, and set the second The wavelength of the LED chip 101 is between 440 nm and 460 nm. As shown in FIG. 5, it can excite the green powder to emit green light, wherein the filter material layer 104 covers the surface of the two chips, as shown in FIG. The absorption peak of the filter material layer 104 is between 440 nm and 460 nm.
  • the light emitted by the second LED chip 102 is absorbed, and the first LED chip 101 Exciting the red phosphor to emit red light, that is, the light of the first color temperature is light of a low color temperature, and is displayed as a warm color, and the LED filament structure is illuminated after the preset time,
  • the second LED chip 102 can also excite the phosphor to emit light, and excite the green powder to emit green light, so that the green powder excitation ratio increases in the light emitted from the LED filament, and the entire filament color temperature becomes high.
  • the LED filament structure when the LED filament structure is just lit, only light emitted by one LED chip may cause the entire LED filament structure to emit light.
  • the filter material layer 104 is transparent and stable after the preset time, the two The emitted light of the chip can cause the entire LED filament structure to emit light, thus achieving a gradual increase in the brightness of the entire LED filament structure.
  • the transmittance of the filter material layer 104 becomes higher as the current applied to the LED filament structure increases.
  • the preset time becomes shorter as the current applied to the LED filament structure increases.
  • the present invention further provides an LED illumination lamp, comprising the LED filament structure according to any one of the above aspects, the number of the LED filament structure and the installation with the LED illumination lamp
  • the manner is set according to the manner and actual needs well known to those skilled in the art.
  • the present invention provides an LED filament structure, the LED filament structure comprising: a substrate; an LE D chip assembly disposed on the substrate, the LED chip assembly including at least one first LED chip And at least one second LED chip having a spacing between adjacent LED chips; a fluorescent material layer disposed on the substrate, wherein the fluorescent material layer covers each of the LED chips; and a filter material layer, Covering a surface of at least one of the first LED chip and the second LED chip, when the LED filament structure is just lit, the filter material layer has an absorption state, so that the first LED chip And one of the second L ED chips excites the fluorescent material layer to emit light of a first color temperature, and after the LED filament structure is illuminated for a preset time, the filter material layer has another absorption state, such that The first LED chip and the second LED chip respectively excite the fluorescent material layer to emit light of a second color temperature, wherein the second color temperature and The first color temperature is different.
  • the LED filament structure of the present invention achieves the filament lamp through the interaction of the first LED chip, the second LED chip and the filter material layer of different wavelengths through environmental changes such as light and heat.
  • the color temperature and the change of brightness make the LED filament structure of the invention and the LED illumination lamp based thereon closer to the incandescent lamp, the structure is simple, easy to implement, and the production process and the incandescent lamp are close to each other, which is advantageous for production. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

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Abstract

一种LED灯丝结构，包括：基板（100）；LED芯片组件，包括至少一个第一LED芯片（101）及至少一个第二LED芯片（102）；荧光材料层（103），包覆各LED芯片；滤光材料层（104），覆盖于第一LED芯片（101）及第二LED芯片（102）中任意一者的表面，LED灯丝结构刚点亮时，滤光材料层（104）不透光，使得荧光材料层（103）发出第一色温的光；LED灯丝结构点亮后的预设时间内，滤光材料层（104）逐渐变为透明，使得第一LED芯片（101）及第二LED芯片（102）发出的光均可激发荧光材料层（103）发出第二色温的光，第二色温与第一色温不同。

Description

LED灯丝结构及基于其的 LED照明灯 技术领域
[0001] 本发明属于照明装置技术领域， 特别是涉及一种 LED灯丝结构及 LED照明灯。
背景技术
[0002] 随着社会的发展和人们生活水平的日益提高， 人们使用的照明产品也越来越多 。 传统的 LED球泡灯采用一个平面的 PCB （Printed Circuit Board） 电路板， 在其 上固封 LED封装体， PCB下面设置有热沉进行散热。 但是， 这样的 LED球泡灯无 法实现 360度全周发光， 另外， 这样的 LED球泡灯和传统的白炽灯外观差异较大 ， 不够美观； 生产工艺和白炽灯差异很大， 白炽灯厂商也没有条件进行生产。
[0003] 为了更接近传统的钨丝灯， 实现全周光， 并且利于生产， 近年来灯丝灯成了主 流。 但是， 灯丝灯和白炽灯的照明效果还有很明显的不同： 1） 灯丝灯的灯丝比 钨丝粗很多； 2） 灯丝灯的灯丝为黄色或者接近黄色， 与白炽灯丝的颜色不同；
3） 灯丝灯点亮后色温基本不变， 而白炽灯点亮达到稳定的亮度有一个延时 （需 要升温） ； 4） 低功率的白炽灯偏向低色温， 而高功率的白炽灯偏向高色温等。 这种差异改善成为本领域的研发重点之一。
[0004] 因此， 如何提供一种 LED灯丝结构及基于其的 LED照明灯， 以解决上述技术问 题使得 LED灯丝灯结构更接近白炽灯， 从而达到灯丝灯色温、 亮度等发生有效变 化的效果实属必要。
发明概述
技术问题
问题的解决方案
技术解决方案
[0005] 鉴于以上所述现有技术的缺点， 本发明的目的在于提供一种 Lm）灯丝结构及基 于其的 LED照明灯， 用于解决现有技术中 LED灯丝灯结构的色温、 亮度等无法达 到便捷有效的变化效果等问题。
[0006] 为实现上述目的及其他相关目的， 本发明提供一种 LED灯丝结构， 所述 LED灯 丝结构包括：
[0007] 基板；
[0008] LED芯片组件， 设置于所述基板上， 所述 LED芯片组件包括至少一个第一 LED 芯片及至少一个第二 LED芯片， 且相邻的 LED芯片之间具有间距；
[0009] 荧光材料层， 设置于所述基板上， 且所述荧光材料层包覆各所述 LED芯片； 以 及
[0010] 滤光材料层， 所述滤光材料层覆盖于所述第一 LED芯片及所述第二 LED芯片中 任意一者的表面， 所述 LED灯丝结构刚点亮时， 所述滤光材料层不透光， 使得未 覆盖所述滤光材料层的 LED芯片发出的光激发所述荧光材料层发出第一色温的光 ; 所述 LED灯丝结构点亮后的预设时间内， 所述滤光材料层逐渐变为透明， 使得 所述第一 LED芯片及所述第二 LED芯片发出的光均可激发所述荧光材料层发出第 二色温的光， 其中， 所述第二色温与所述第一色温不同。
[0011] 作为本发明的一种优选方案， 所述第一 LED芯片的发光波长介于 440nm~460nm 之间， 所述第二 LED芯片的发光波长介于 470nm~550nm之间， 所述滤光材料层 覆盖于所述第一 LED芯片的表面， 所述 LED灯丝结构刚点亮时， 所述第二 LED芯 片激发所述荧光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温高于所 述第一色温。
[0012] 作为本发明的一种优选方案， 所述第一 LED芯片的发光波长介于 440nm~460nm 之间， 所述第二 LED芯片的发光波长介于 470nm~550nm之间， 所述滤光材料层 覆盖于所述第二 LED芯片的表面， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯 片激发所述荧光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温低于所 述第一色温。
[0013] 作为本发明的一种优选方案， 所述第一 LED芯片的发光波长介于 380nm~430nm 之间， 所述第二 LED芯片的发光波长介于 440nm~460nm之间， 所述滤光材料层 覆盖于所述第一 LED芯片的表面， 所述 LED灯丝结构刚点亮时， 所述第二 LED芯 片激发所述荧光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温低于所 述第一色温。
[0014] 作为本发明的一种优选方案， 所述第一 LED芯片的发光波长介于 380nm~430nm 之间， 所述第二 LED芯片的发光波长介于 440nm~460nm之间， 所述滤光材料层 覆盖于所述第二 LED芯片的表面， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯 片激发所述荧光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温高于所 述第一色温。
[0015] 作为本发明的一种优选方案， 所述 LED灯丝结构达到所述第二色温的发光状态 时， 所述滤光材料层的透射率随施加到所述 LED灯丝结构上的电流的增大而变高 ; 所述预设时间随施加到所述 LED灯丝结构上的电流的增大而变短。
[0016] 作为本发明的一种优选方案， 所述第一 LED芯片及所述第二 LED芯片均设置于 所述基板的同一侧， 且所述第一 LED芯片与所述第二 LED芯片呈交替等间距排布
[0017] 作为本发明的一种优选方案， 所述荧光材料层包括胶层及荧光粉， 所述胶层的 材料包括硅胶及环氧树脂中至少一种， 所述荧光粉至少包括红粉和绿粉。
[0018] 作为本发明的一种优选方案， 所述滤光材料层包括光致变化材料层及热致变化 材料层中的任意一种。
[0019] 作为本发明的一种优选方案， 所述第一色温下光显示为暖色调， 所述第二色温 下光显示为冷色调； 或者， 所述第一色温下光显示为冷色调， 所述第二色温下 光显示为暖色调。
[0020] 本发明还提供一种 LED灯丝结构， 所述 LED灯丝结构包括：
[0021] 基板；
[0022] LED芯片组件， 设置于所述基板上， 所述 LED芯片组件包括至少一个第一 LED 芯片及至少一个第二 LED芯片， 且相邻的 LED芯片之间具有间距；
[0023] 荧光材料层， 设置于所述基板上， 且所述荧光材料层包覆各所述 LED芯片； 以 及
[0024] 滤光材料层， 所述滤光材料层覆盖于所述第一 LED芯片及所述第二 LED芯片的 表面， 所述 LED灯丝结构刚点亮时， 所述滤光材料层的吸收峰与所述第一 LED芯 片及所述第二 LED芯片中一者的发光波长相等， 以吸收对应所述 LED芯片发出的 光， 使得吸收峰与所述滤光材料层不同的 LED芯片发出的光激发所述荧光材料层 发出第一色温的光； 所述 LED灯丝结构点亮后的预设时间内， 所述滤光材料层的 吸收峰逐渐消失或者红移， 使得所述第一 LED芯片及所述第二 LED芯片发出的光 均可激发所述荧光材料层发出第二色温的光， 其中， 所述第二色温与所述第一 色温不同。
[0025] 作为本发明的一种优选方案， 所述第一 LED芯片的发光波长介于 440nm~460nm 之间， 所述第二 LED芯片的发光波长介于 470nm~550nm之间， 所述 LED灯丝结 构刚点亮时， 所述滤光材料层的吸收峰介于 440nm~460nm之间， 所述第二 LED 芯片激发所述荧光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第 一 LED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温高于 所述第一色温。
[0026] 作为本发明的一种优选方案， 所述第一 LED芯片的发光波长介于 440nm~460nm 之间， 所述第二 LED芯片的发光波长介于 470nm~550nm之间， 所述 LED灯丝结 构刚点亮时， 所述滤光材料层的吸收峰介于 470nm~550nm之间， 所述第一 LED 芯片激发所述荧光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第 一 LED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温低于 所述第一色温。
[0027] 作为本发明的一种优选方案， 所述第一 LED芯片的发光波长介于 380nm~430nm 之间， 所述第二 LED芯片的发光波长介于 440nm~460nm之间， 所述 LED灯丝结 构刚点亮时， 所述滤光材料层的吸收峰介于 380nm~430nm之间， 所述第二 LED 芯片激发所述荧光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第 一 LED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温低于 所述第一色温。
[0028] 作为本发明的一种优选方案， 所述第一 LED芯片的发光波长介于 380nm~430nm 之间， 所述第二 LED芯片的发光波长介于 440nm~460nm之间， 所述滤光材料层 的吸收峰介于 440nm~460nm之间， 所述 LED灯丝结构刚点亮时， 所述第一 LED 芯片激发所述荧光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第 一 LED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温高于 所述第一色温。
[0029] 作为本发明的一种优选方案， 所述 LED灯丝结构达到所述第二色温的发光状态 时， 所述滤光材料层的透射率随施加到所述 LED灯丝结构上的电流的增大而变高 ; 所述预设时间随施加到所述 LED灯丝结构上的电流的增大而变短。
[0030] 作为本发明的一种优选方案， 所述第一 LED芯片及所述第二 LED芯片均设置于 所述基板的同一侧， 且所述第一 LED芯片与所述第二 LED芯片呈交替等间距排布
[0031] 作为本发明的一种优选方案， 所述荧光材料层包括胶层及荧光粉， 所述胶层的 材料包括硅胶及环氧树脂中至少一种， 所述荧光粉至少包括红粉和绿粉。
[0032] 作为本发明的一种优选方案， 所述滤光材料层包括光致变化材料层及热致变化 材料层中的任意一种。
[0033] 作为本发明的一种优选方案， 所述第一色温下光显示为暖色调， 所述第二色温 下光显示为冷色调； 或者， 所述第一色温下光显示为冷色调， 所述第二色温下 光显示为暖色调。
[0034] 本发明还提供一种 LED照明灯， 所述 LED照明灯包括如上述任意一项方案所述 的 LED灯丝结构。
发明的有益效果
有益效果
[0035] 如上所述， 本发明的 LED灯丝结构及基于其的 LED照明灯， 具有以下有益效果
[0036] 本发明的 LED灯丝结构， 通过可以激发不同荧光粉而最终发射不同色温的光的 第一 LED芯片、 第二 LED芯片和滤光材料层的共同作用， 通过环境的改变， 如光 、 热等的改变， 而实现灯丝灯的色温以及亮度等的改变， 从而使得本发明的 LED 灯丝结构及基于其的 LED照明灯更接近白炽灯， 结构简单、 易于实现， 且生产工 艺和白炽灯接近， 利于生产。
对附图的简要说明 附图说明
[0037] 图 1显示为本发明滤光材料层覆盖在第一 LED芯片表面的 LH）灯丝结构的示意 图。
[0038] 图 2显示为本发明滤光材料层覆盖在第二 LED芯片表面的 LH）灯丝结构的示意 图。
[0039] 图 3显示为本发明滤光材料层覆盖在两种 LED芯片表面的 LED灯丝结构的示意 图。
[0040] 图 4显示为红光激发的光谱图。
[0041] 图 5显示为绿光激发的光谱图。
[0042] 元件标号说明
[0043] 100： 基板； 101 : 第一 LED芯片； 102: 第二 LED芯片； 103: 荧光材料层； 10
4： 滤光材料层。
发明实施例
本发明的实施方式
[0044] 以下通过特定的具体实例说明本发明的实施方式， 本领域技术人员可由本说明 书所揭露的内容轻易地了解本发明的其他优点与功效。 本发明还可以通过另外 不同的具体实施方式加以实施或应用， 本说明书中的各项细节也可以基于不同 观点与应用， 在没有背离本发明的精神下进行各种修饰或改变。
[0045] 请参阅图 1至图 5。 需要说明的是， 本实施例中所提供的图示仅以示意方式说明 本发明的基本构想， 虽图示中仅显示与本发明中有关的组件而非按照实际实施 时的组件数目、 形状及尺寸绘制， 其实际实施时各组件的形态、 数量及比例可 为一种随意的改变， 且其组件布局形态也可能更为复杂。
[0046] 实施例一：
[0047] 如图 1~2及4~5所示， 本发明提供一种 LED灯丝结构， 所述 LED灯丝结构包括：
[0048] 基板 100;
[0049] LED芯片组件， 设置于所述基板 100上， 所述 LED芯片组件包括至少一个第一 L ED芯片 101及至少一个第二 LED芯片 102， 且相邻的 LED芯片之间具有间距； [0050] 荧光材料层 103， 设置于所述基板 100上， 且所述荧光材料层 103包覆各所述 LE D芯片；
[0051] 滤光材料层 104， 覆盖于所述第一 LED芯片 101及所述第二 LED芯片 102中至少 一者的表面， 所述 LED灯丝结构刚点亮时， 所述滤光材料层 104具有一吸收态， 使得所述第一 LED芯片 101及所述第二 LED芯片 102中的一者激发所述荧光材料层 103发出第一色温的光， 所述 LED灯丝结构点亮预设时间后， 所述滤光材料层 104 具有另一吸收态， 使得所述第一 LED芯片 101及所述第二 LED芯片 102均激发所述 荧光材料层 103发出第二色温的光， 其中， 所述第二色温与所述第一色温不同。
[0052] 作为示例， 所述第一 LED芯片 101及所述第二 LED芯片 102均设置于所述基板 10 0的同一侧， 且所述第一 LED芯片 101与所述第二 LED芯片 102呈线型交替等间距 排布。
[0053] 具体的， 本发明提供一种 LED灯丝结构， 其包括一基板 100， 优选地， 所述基 板 100可以为条状的透明陶瓷基板， 所述基板优选具有良好的热传递性。 另外， 在所述基板 100上安装设置有 LED芯片组件， 其中， 所述 LED芯片组件中的所述 第一 LED芯片 101以及所述第二 LED芯片 102的数量依据实际应用需求而设定， 其 中， 不同的 LED芯片 （如第一 LED芯片和第二 LED芯片） 具有不同的发光波长， 可以激发荧光材料层 103而发出不同色温色调的光， 且相邻的 LED芯片之间以不 接触的方式分散设置， 即第一 LED芯片 101之间不接触， 第二 LED芯片 102之间不 接触， 第一 LED芯片 101与第二 LED芯片 102之间也不接触。
[0054] 优选地， 所述第一 LED芯片 101与所述第二 LED芯片 102设置在所述基板 100的 同一面， 即发光方向一致， 且二者呈交替等间距排布， 呈线型单行排布， 从而 保证发光以及色温和亮度等变化的均匀性， 得到良好的视觉效果， 另外， 可以 最大程度的增大相邻的 LED芯片之间的距离， 从而可以使每个 LED芯片均具有较 大的散热空间， 从整体上提高发光区的散热效果， 进一步， 各 LED芯片之间优选 是通过金线实现电连接， 当然， 实现电连接的方式也可以是本领域普通技术人 员熟知的其他方式， 不以此为限。
[0055] 作为示例， 所述荧光材料层 103包括胶层及荧光粉， 所述胶层的材料包括硅胶 及环氧树脂中的至少一种， 所述荧光粉至少包括红粉和绿粉。
[0056] 具体的， 所述荧光材料层 103封装在所述基板 100以及所述第一 LED芯片 101、 所述第二 LED芯片 102的周围， 优选地， 所述荧光材料层 103环绕所述基板 100设 置， 即在所述基板 100的周侧均设置有所述荧光材料层 103 , 进而所述荧光材料 层 103将各 LED芯片的除了与所述基板接触的一面外的其他各面全部包覆， 相邻 各 LED芯片之间被所述荧光材料层 103隔开， 另外， 所述基板 100的两个端部伸出 于所述荧光材料层 103之外。
[0057] 具体的， 所述荧光材料层 103由胶层以及荧光粉制备而成， 所述胶层将所述荧 光粉均匀的固定在各所述 LED芯片的周围， 所述荧光粉与所述第一 LED芯片以及 所述第二 LED芯片进行匹配， 以最终发射出不同色温的光。 优选地， 所述荧光粉 是一种复合粉， 如至少包括红粉 （（Sr xCa i_x）AlSiN 3
） 和黄粉或者绿粉 （YAG、 LuAG、 GaYAG等） ， 从而可以接受不同的波长的 芯片的激发， 最终发出红光 （暖色） 以及绿色 （冷色） ， 实现高低色温、 冷暖 色调的变化。 进一步， 可以通过调配所述荧光粉中各种粉的比例， 以实现不同 色温等的变化， 当然， 所述荧光粉也可以是 RGB三色复合粉， 也可以是依据实 际需求实现不同的色温、 色调变化的其他的荧光粉构成， 在此不做具体限制。
[0058] 作为示例， 所述滤光材料层 104包括光致变化材料层及热致变化材料层中的任 意一种。
[0059] 作为示例， 所述第一色温下光显示为暖色调， 所述第二色温下光显示为冷色调 ; 或者所述第一色温下光显示为冷色调， 所述第二色温下光显示为暖色调。
[0060] 具体的， 所述滤光材料层 104设置于需要的所述 LED芯片的表面， 包覆所述 LE D芯片除了与基板接触的面之外的其他表面， 所述滤光材料层 104位于 LED芯片 与所述荧光材料层 103之间。 其中， 所述滤光材料层 104包括双态或者多态且变 化可逆的滤光材料， 可以是热致或者光致变化的材料， 即所述滤光材料层 104在 受到一定波长的光或者所述滤光材料层 104在受热时均会发生状态 （吸收态） 变 化， 具有不同的吸光以及挡光等的作用， 从而可以通过所述滤光材料层 104以及 具有不同激发波的第一 LED芯片、 第二 LED芯片配合作用， 使得 LED灯丝结构在 刚点亮时以及点亮预设时间后呈现出不同色温的光， 其中， 在经历 LED灯丝结构 点亮的所述预设时间内， 所述滤光材料层 104发生不同形态的变化， 从而起到对 第一 LED芯片或者第二 LED芯片具有不同的作用的效果。 [0061] 本发明利用这种环境的变化， 如 LED芯片发出的光或者 LED灯丝结构点亮产生 的热的变化， 导致所述滤光材料层的形态 （吸收态） 发生变化， 从而达到灯丝 灯的色温、 亮度发生变化的效果， 如可以实现暖色变为冷色， 也可以实现冷色 变为暖色， 但不局限于此， 色温色调变化可以依据实际需求设定， 特别地， 基 于该 LED灯丝结构得到的 LED照明灯可以作为适合欧洲酒馆的复古情怀灯等。
[0062] 如图 1及图 2所示， 作为本发明的一种实施方案示例， 所述滤光材料层 104覆盖 于所述第一 LED芯片 101及所述第二 LED芯片 102中任意一者的表面， 所述 LED灯 丝结构刚点亮时， 所述滤光材料层 104不透光， 如所述滤光材料层 104显示黑色 ， 以遮挡其覆盖的 LED芯片发出的光， 使得未覆盖所述滤光材料层 104的 LED芯 片发出的光激发所述荧光材料层 103 ; 所述 LED灯丝结构点亮后的所述预设时间 内， 所述滤光材料层 104逐渐变为透明， 使得所述第一 LED芯片 101及所述第二 L ED芯片 102发出的光均可激发所述荧光材料层 103
[0063] 具体的， 提供一种基于所述滤光材料层 104实现灯丝结构色温变化的一种方案 的示例， 在该方案中， 所述滤光材料层 104设置在一种芯片的表面， 可以是设置 在第一 LED芯片表面， 也可以是第二 LED芯片的表面， 所述滤光材料层 104优选 是热致变化材料层， 在 LED灯丝结构不点亮或者刚刚点亮时， 所述滤光材料层呈 黑色， 即呈现一种吸收态， 黑色的滤光材料层会遮挡被所述滤光材料层覆盖的 这一种类芯片发光， 从而该种芯片发出的光被遮挡， 无法激发荧光材料层发光 ， 也就是说， 第一色温的光是不覆盖滤光材料层 104的 LED芯片作用的结果； 当 所述 LED灯丝结构点亮后， 所述滤光材料层逐渐变为透明， 逐渐变为另一吸收态 ， 在所述预设时间后所述滤光材料层的透明状态稳定， 透明的滤光材料层不再 挡光， 此时， 两种 LED芯片发出的光均可激发所述荧光材料层， 也就是说， 第二 色温的光是第一 LED芯片及第二 LED芯片两者作用的结果。 当然， 所述滤光材料 层也可以是光致变色材料层， 如在 LED灯丝结构不点亮或者刚刚点亮时显示黑色 ， 第一色温的光是不覆盖滤光材料层的 LED芯片作用的结果， 经过预设波长的光 （其覆盖的 LED芯片发出的光） 照射后， 光致变色材料层逐渐变为透明， 使得第 二色温的光是有第一 LED芯片及第二 LED芯片两者作用的结果。
[0064] 作为示例， 所述第一 LED芯片 101的发光波长介于 440nm~460nm之间， 所述第 二 LED芯片 102的发光波长介于 470nm~550nm之间， 所述滤光材料层 104覆盖于 所述第一 LED芯片 101的表面， 所述 LED灯丝结构刚点亮时， 所述第二 LED芯片 1 02激发所述荧光材料层 103发光， 所述 LED灯丝结构点亮所述预设时间后， 所述 第一 LED芯片 101及所述第二 LED芯片 102均激发所述荧光材料层发光， 所述第二 色温高于所述第一色温。
[0065] 具体的， 在该示例中， 设置所述第一 LED芯片 101的发光波长介于 440nm~460n m之间， 如图 5所示， 其可以激发绿色荧光粉 （绿粉） 而发出绿光， 设置所述第 二 LED芯片 101的发光波长介于 470nm~550nm之间， 如图 4所示， 其可以激发红 色荧光粉 （红粉） 发出红光， 其中， 所述滤光材料层 104设置在所述第一 LED芯 片 101表面， 所述滤光材料层 104可以包括包含有热敏黑 ODB、 显色剂双酚 AF （ BFPA） 和溶剂的感温变色微胶囊， 如图 1所示， 此时， 所述 LED灯丝结构刚点亮 时， 第二 LED芯片 102激发红色荧光粉发出红光， 即第一色温的光为低色温的光 ， 显示为暖色， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED芯片 101 也可以激发荧光粉发光， 激发绿粉发出绿光， 从而使得 LED灯丝结构发出的光中 ， 绿粉激发比率上升， 整个灯丝色温变高。
[0066] 另外， 所述 LED灯丝结构刚点亮时， 只有一种 LED芯片发出的光可以导致整个 LED灯丝结构发光， 当经历所述预设时间所述滤光材料层 104透明稳定后， 两种 芯片的发出的光均可导致整个 LED灯丝结构发光， 因此， 实现了整个 LED灯丝结 构亮度的逐渐上升。
[0067] 作为示例， 所述第一 LED芯片 101的发光波长介于 440nm~460nm之间， 所述第 二 LED芯片 102的发光波长介于 470nm~550nm之间， 所述滤光材料层 104覆盖于 所述第二 LED芯片 102的表面， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯片 1 01激发所述荧光材料层 103发光， 所述 LED灯丝结构点亮所述预设时间后， 所述 第一 LED芯片 101及所述第二 LED芯片 102均激发所述荧光材料层 103发光， 所述 第二色温低于所述第一色温。
[0068] 具体的， 在该示例中， 设置所述第一 LED芯片 101的波长介于 440nm~460nm之 间， 如图 5所示， 其可以激发绿粉发出绿光， 设置所述第二 LED芯片 101的波长介 于 470nm~550nm之间， 如图 4所示， 其可以激发红粉发出红光， 其中， 所述滤光 材料层 104设置在所述第二 LED芯片 102上， 所述滤光材料层 104可以采用崇裕科 技的感温变色材料， 其微胶囊包覆着隐形染料、 色形成剂及控温剂， 如图 2所示 ， 此时， 所述 LED灯丝结构刚点亮时， 第一 LED芯片 101激发绿色荧光粉发出绿 光， 即第一色温的光为高色温的光， 显示为冷色， 所述 LED灯丝结构点亮所述预 设时间后， 所述第二 LED芯片 102也可以激发荧光粉发光， 激发红粉发出红光， 从而使得 LED灯丝发出的光中， 红粉激发比率上升， 整个灯丝色温变低。
[0069] 另外， 所述 LED灯丝结构刚点亮时， 只有一种 LED芯片发出的光可以导致整个 LED灯丝结构发光， 当经历所述预设时间所述滤光材料层 104透明稳定后， 两种 芯片的发出的光均可导致整个 LED灯丝结构发光， 因此， 实现了整个 LED灯丝结 构亮度的逐渐上升。
[0070] 作为示例， 所述第一 LED芯片 101的发光波长介于 380nm~430nm之间， 所述第 二 LED芯片 102的发光波长介于 440nm~460nm之间， 所述滤光材料层 104覆盖于 所述第一 LED芯片 101的表面， 所述 LED灯丝结构刚点亮时， 所述第二 LED芯片 1 02激发所述荧光材料层 103发光， 所述 LED灯丝结构点亮所述预设时间后， 所述 第一 LED芯片 101及所述第二 LED芯片 102均激发所述荧光材料层 103发光， 所述 第二色温低于所述第一色温。
[0071] 具体的， 在该示例中， 设置所述第一 LED芯片 101的波长介于 380nm~430nm之 间， 如图 4所示， 其可以激发红粉发出红光， 设置所述第二 LED芯片 102的波长介 于 440nm~460nm之间， 如图 5所示， 其可以激发绿粉发出绿光， 其中， 所述滤光 材料层 104设置在所述第一 LED芯片 101上， 如图 1所示， 此时， 所述 LED灯丝结 构刚点亮时， 第二 LED芯片 102激发绿色荧光粉发出绿光， 即第一色温的光为高 色温的光， 显示为冷色， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED 芯片 101也可以激发荧光粉发光， 激发红粉发出红光， 从而使得 LED灯丝发出的 光中， 红粉激发比率上升， 整个灯丝色温变低。
[0072] 另外， 所述 LED灯丝结构刚点亮时， 只有一种 LED芯片发出的光可以导致整个 LED灯丝结构发光， 当经历所述预设时间所述滤光材料层 104透明稳定后， 两种 芯片的发出的光均可导致整个 LED灯丝结构发光， 因此， 实现了整个 LED灯丝结 构亮度的逐渐上升。 [0073] 作为示例， 所述第一 LED芯片 101的发光波长介于 380nm~430nm之间， 所述第 二 LED芯片 102的发光波长介于 440nm~460nm之间， 所述滤光材料层 104覆盖于 所述第二 LED芯片 102的表面， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯片 1 01激发所述荧光材料层 103发光， 所述 LED灯丝结构点亮所述预设时间后， 所述 第一 LED芯片 101及所述第二 LED芯片 102均激发所述荧光材料层 103发光， 所述 第二色温高于所述第一色温。
[0074] 具体的， 在该示例中， 设置所述第一 LED芯片 101的波长介于 380nm~430nm之 间， 如图 4所示， 其可以激发红粉发出红光， 设置所述第二 LED芯片 102的波长介 于 440nm~460nm之间， 如图 5所示， 其可以激发绿粉发出绿光， 其中， 所述滤光 材料层 104设置在所述第二 LED芯片 102上， 如图 2所示， 此时， 所述 LED灯丝结 构刚点亮时， 第一 LED芯片 101激发红色荧光粉发出红光， 即第一色温的光为低 色温的光， 显示为暖色， 所述 LED灯丝结构点亮所述预设时间后， 所述第二 LED 芯片 102也可以激发荧光粉发光， 激发绿粉发出绿光， 从而使得 LED灯丝发出的 光中， 绿粉激发比率上升， 整个灯丝色温变高。
[0075] 另外， 所述 LED灯丝结构刚点亮时， 只有一种 LED芯片发出的光可以导致整个 LED灯丝结构发光， 当经历所述预设时间所述滤光材料层 104透明稳定后， 两种 芯片的发出的光均可导致整个 LED灯丝结构发光， 因此， 实现了整个 LED灯丝结 构亮度的逐渐上升。
[0076] 作为示例， 所述 LED灯丝结构达到所述第二色温的发光状态时， 所述滤光材料 层 104的透射率随施加到所述 LED灯丝结构上的电流的增大而变高， 且所述预设 时间随施加到所述 LED灯丝结构上的电流的增大而变短。
[0077] 具体的， 当施加到整个所述 LED灯丝结构的电流增大时， 此时， 流经第一 LED 芯片 101及第二 LED芯片 102的电流均增大， 从而， 当功率较低时， 发光或者发热 都比较少， 滤光材料层变化不完全； 当功率较大时， 滤光材料层完全转变为对 应的另一吸收态， 相应的透射率变高， 即所述滤光材料层的吸收态变化比较彻 底明显， 使得 LED灯丝结构的色温、 亮度等变化更加明显， 同时， 也使得滤光材 料层发生吸收状态变化达到另一吸收态的稳定态时所需的所述预设时间减少， 其中， 施加电流的大小可以依据实际需求而设定。 [0078] 另外， 本发明还提供一种 LED照明灯， 所述 LED照明灯包括如上述任意一种方 案所述的 LED灯丝结构， 所述 LED灯丝结构的数量以及与所述 LED照明灯安装的 方式依据本领域普通技术人员熟知的方式及实际需求而设定。
[0079] 实施例二：
[0080] 如图 3~5所示， 本发明提供一种 LED灯丝结构， 所述 LED灯丝结构包括：
[0081] 基板 100;
[0082] LED芯片组件， 设置于所述基板 100上， 所述 LED芯片组件包括至少一个第一 L ED芯片 101及至少一个第二 LED芯片 102， 且相邻的 LED芯片之间具有间距；
[0083] 荧光材料层 103， 设置于所述基板 100上， 且所述荧光材料层 103包覆各所述 LE D芯片；
[0084] 滤光材料层 104， 覆盖于所述第一 LED芯片 101及所述第二 LED芯片 102中至少 一者的表面， 所述 LED灯丝结构刚点亮时， 所述滤光材料层 104具有一吸收态， 使得所述第一 LED芯片 101及所述第二 LED芯片 102中的一者激发所述荧光材料层 103发出第一色温的光， 所述 LED灯丝结构点亮预设时间后， 所述滤光材料层 104 具有另一吸收态， 使得所述第一 LED芯片 101及所述第二 LED芯片 102均激发所述 荧光材料层 103发出第二色温的光， 其中， 所述第二色温与所述第一色温不同。
[0085] 作为示例， 所述第一 LED芯片 101及所述第二 LED芯片 102均设置于所述基板 10 0的同一侧， 且所述第一 LED芯片 101与所述第二 LED芯片 102呈线型交替等间距 排布。
[0086] 具体的， 本发明提供一种 LED灯丝结构， 其包括一基板 100， 优选地， 所述基 板 100可以为条状的透明陶瓷基板， 所述基板优选具有良好的热传递性。 另外， 在所述基板 100上安装设置有 LED芯片组件， 其中， 所述 LED芯片组件中的所述 第一 LED芯片 101以及所述第二 LED芯片 102的数量依据实际应用需求而设定， 其 中， 不同的 LED芯片 （如第一 LED芯片和第二 LED芯片） 具有不同的发光波长， 可以激发荧光材料层 103而发出不同色温色调的光， 且相邻的 LED芯片之间以不 接触的方式分散设置， 即第一 LED芯片 101之间不接触， 第二 LED芯片 102之间不 接触， 第一 LED芯片 101与第二 LED芯片 102之间也不接触。
[0087] 优选地， 所述第一 LED芯片 101与所述第二 LED芯片 102设置在所述基板 100的 同一面， 即发光方向一致， 且二者呈交替等间距排布， 呈线型单行排布， 从而 保证发光以及色温和亮度等变化的均匀性， 得到良好的视觉效果， 另外， 可以 最大程度的增大相邻的 LED芯片之间的距离， 从而可以使每个 LED芯片均具有较 大的散热空间， 从整体上提高发光区的散热效果， 进一步， 各 LED芯片之间优选 是通过金线实现电连接， 当然， 实现电连接的方式也可以是本领域普通技术人 员熟知的其他方式， 不以此为限。
[0088] 作为示例， 所述荧光材料层 103包括胶层及荧光粉， 所述胶层的材料包括硅胶 及环氧树脂中的至少一种， 所述荧光粉至少包括红粉和绿粉。
[0089] 具体的， 所述荧光材料层 103封装在所述基板 100以及所述第一 LED芯片 101、 所述第二 LED芯片 102的周围， 优选地， 所述荧光材料层 103环绕所述基板 100设 置， 即在所述基板 100的周侧均设置有所述荧光材料层 103 , 进而所述荧光材料 层 103将各 LED芯片的除了与所述基板接触的一面外的其他各面全部包覆， 相邻 各 LED芯片之间被所述荧光材料层 103隔开， 另外， 所述基板 100的两个端部伸出 于所述荧光材料层 103之外。
[0090] 具体的， 所述荧光材料层 103由胶层以及荧光粉制备而成， 所述胶层将所述荧 光粉均匀的固定在各所述 LED芯片的周围， 所述荧光粉与所述第一 LED芯片以及 所述第二 LED芯片进行匹配， 以最终发射出不同色温的光。 优选地， 所述荧光粉 是一种复合粉， 如至少包括红粉 （（Sr xCa iJAlSiN s
） 和黄粉或者绿粉 （YAG、 LuAG、 GaYAG等） ， 从而可以接受不同的波长的 芯片的激发， 最终发出红光 （暖色） 以及绿色 （冷色） ， 实现高低色温、 冷暖 色调的变化。 进一步， 可以通过调配所述荧光粉中各种粉的比例， 以实现不同 色温等的变化， 当然， 所述荧光粉也可以是 RGB三色复合粉， 也可以是依据实 际需求实现不同的色温、 色调变化的其他的荧光粉构成， 在此不做具体限制。
[0091] 作为示例， 所述滤光材料层 104包括光致变化材料层及热致变化材料层中的任 意一种。
[0092] 作为示例， 所述第一色温下光显示为暖色调， 所述第二色温下光显示为冷色调 ; 或者所述第一色温下光显示为冷色调， 所述第二色温下光显示为暖色调。
[0093] 具体的， 所述滤光材料层 104设置于需要的所述 LED芯片的表面， 包覆所述 LE D芯片除了与基板接触的面之外的其他表面， 所述滤光材料层 104位于LED芯片 与所述荧光材料层 103之间。 其中， 所述滤光材料层 104包括双态或者多态且变 化可逆的滤光材料， 可以是热致或者光致变化的材料， 即所述滤光材料层 104在 受到一定波长的光或者所述滤光材料层 104在受热时均会发生状态 （吸收态） 变 化， 具有不同的吸光以及挡光等的作用， 从而可以通过所述滤光材料层 104以及 具有不同激发波的第一LED芯片、 第二LED芯片配合作用， 使得LED灯丝结构在 刚点亮时以及点亮预设时间后呈现出不同色温的光， 其中， 在经历LED灯丝结构 点亮的所述预设时间内， 所述滤光材料层 104发生不同形态的变化， 从而起到对 第一LED芯片或者第二LED芯片具有不同的作用的效果。
[0094] 本发明利用这种环境的变化， 如LED芯片发出的光或者LED灯丝结构点亮产生 的热的变化， 导致所述滤光材料层的形态 （吸收态） 发生变化， 从而达到灯丝 灯的色温、 亮度发生变化的效果， 如可以实现暖色变为冷色， 也可以实现冷色 变为暖色， 但不局限于此， 色温色调变化可以依据实际需求设定， 特别地， 基 于该LED灯丝结构得到的LED照明灯可以作为适合欧洲酒馆的复古情怀灯等。
[0095] 如图 3所示， 作为本发明的另外一种实施方案示例， 所述滤光材料层 104覆盖于 所述第一LED芯片 101及所述第二LED芯片 102的表面， 所述LED灯丝结构刚点亮 时， 所述滤光材料层 104的吸收峰与所述第一LED芯片 101及所述第二LED芯片 10 2中一者的发光波长相等， 以吸收对应所述LED芯片发出的光， 使得该LED芯片 无法激发荧光材料层发光， 只有发光波长与所述虑光材料层的吸收峰不相同的 另外一种LED芯片发出的光可以激发荧光材料层发光， 所述LED灯丝结构点亮后 的所述预设时间内， 所述滤光材料层 104的吸收峰逐渐消失或者红移， 使得所述 第一LED芯片 101及所述第二LED芯片 102发出的光均可激发所述荧光材料层 103
[0096] 具体的， 本示例提供一种基于所述滤光材料层 104实现灯丝结构色温变化的另 外一种方案的示例， 在该方案中， 所述滤光材料层 104设置在所述第一LED芯片 及第二LED芯片的表面上， 其中， 所述滤光材料层优选为热致变化材料， 所述滤 光材料层 104在LED灯丝结构不点亮或者刚点亮时， 呈现一种吸收态， 即所述滤 光材料层 104具有一吸收峰， 其吸收峰与两种芯片发光波长中的任意一者相等， 从而可以将该种芯片发出的光吸收， 使得第一色温的光是另外一种与滤光材料 层具有不同的吸收峰的 LED芯片发出的光激发荧光材料层的结果， 当 LED灯丝结 构点亮后， 所述滤光材料层 104受热， 逐渐变为另一吸收态， 其吸收峰逐渐消失 ， 或者， 所述滤光材料层受热， 其吸收峰逐渐红移， 这都会导致所述滤光材料 层 104不再吸收所述第一 LED芯片 101发出的光， 也不会吸收所述第二 LED芯片 10 2发出的光， 从而使得第二色温的光是两种芯片发出的光共同作用的结果， 在所 述预设时间后， 所述滤光材料层的这一吸收态达到稳定。 当然， 所述滤光材料 层 104也可以是光致变化材料层， 如在 LED灯丝结构不点亮或者刚刚点亮时具有 一吸收峰， 第一色温的光是发光波长与所述吸收峰不同的 LED芯片作用的结果， 经过预设波长的光 （发光波长与所述吸收峰相同的 LED芯片发出的光） 照射后， 光致变化材料层逐渐变为透明， 使得第二色温的光是有第一 LED芯片及第二 LED 芯片两者作用的结果。
[0097] 作为示例， 所述第一 LED芯片 101的发光波长介于 440nm~460nm之间， 所述第 二 LED芯片 102的发光波长介于 470nm~550nm之间， 所述 LED灯丝结构刚点亮时 ， 所述滤光材料层 104的吸收峰介于 440nm~460nm之间， 所述第二 LED芯片 102 激发所述荧光材料层 103发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第 一 LED芯片 101及所述第二 LED芯片 102均激发所述荧光材料层 103发光， 所述第 二色温高于所述第一色温。
[0098] 具体的， 在该示例中， 设置所述第一 LED芯片 101的发光波长介于 440nm~460n m之间， 如图 5所示， 其可以激发绿粉发出绿光， 设置所述第二 LED芯片 101的波 长介于 470nm~550nm之间， 如图 4所示， 其可以激发红粉发出红光， 其中， 所述 滤光材料层 104均覆盖在两种芯片的表面， 如图 3所示， 滤光材料层 104的吸收峰 介于 440nm~460nm之间， 此时， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯 片 101发出的光被吸收掉， 第二 LED芯片 102激发红色荧光粉发出红光， 即第一色 温的光为低色温的光， 显示为暖色， 所述 LED灯丝结构点亮所述预设时间后， 所 述第一 LED芯片 101也可以激发荧光粉发光， 激发绿粉发出绿光， 从而使得 LED 灯丝发出的光中， 绿粉激发比率上升， 整个灯丝色温变高。
[0099] 另外， 所述 LED灯丝结构刚点亮时， 只有一种 LED芯片发出的光可以导致整个 LED灯丝结构发光， 当经历所述预设时间所述滤光材料层 104透明稳定后， 两种 芯片的发出的光均可导致整个 LED灯丝结构发光， 因此， 实现了整个 LED灯丝结 构亮度的逐渐上升。
[0100] 作为示例， 所述第一 LED芯片 101的发光波长介于 440nm~460nm之间， 所述第 二 LED芯片 102的发光波长介于 470nm~550nm之间， 所述 LED灯丝结构刚点亮时 ， 所述滤光材料层 104的吸收峰介于 470nm~550nm之间， 所述第一 LED芯片 101 激发所述荧光材料层 103发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第 一 LED芯片 101及所述第二 LED芯片 102均激发所述荧光材料层 103发光， 所述第 二色温低于所述第一色温。
[0101] 具体的， 在该示例中， 设置所述第一 LED芯片 101的发光波长介于 440nm~460n m之间， 如图 5所示， 其可以激发绿粉发出绿光， 设置所述第二 LED芯片 101的波 长介于 470nm~550nm之间， 如图 4所示， 其可以激发红粉发出红光， 其中， 所述 滤光材料层 104均覆盖在两种芯片的表面， 所述滤光材料层 104可以采用崇裕科 技的感温变色材料， 其微胶囊包覆着隐形染料、 色形成剂及控温剂， 如图 3所示 ， 滤光材料层 104的吸收峰介于 470nm~550nm之间， 此时， 所述 LED灯丝结构刚 点亮时， 所述第二 LED芯片 102发出的光被吸收掉， 第一 LED芯片 101激发绿色荧 光粉发出绿光， 即第一色温的光为高色温的光， 显示为冷色， 所述 LED灯丝结构 点亮所述预设时间后， 所述第二 LED芯片 102也可以激发荧光粉发光， 激发红粉 发出红光， 从而使得 LED灯丝发出的光中， 红粉激发比率上升， 整个灯丝色温变 低。
[0102] 另外， 所述 LED灯丝结构刚点亮时， 只有一种 LED芯片发出的光可以导致整个 LED灯丝结构发光， 当经历所述预设时间所述滤光材料层 104透明稳定后， 两种 芯片的发出的光均可导致整个 LED灯丝结构发光， 因此， 实现了整个 LED灯丝结 构亮度的逐渐上升。
[0103] 作为示例， 所述第一 LED芯片 101的发光波长介于 380nm~430nm之间， 所述第 二 LED芯片 102的发光波长介于 440nm~460nm之间， 所述 LED灯丝结构刚点亮时 ， 所述滤光材料层 104的吸收峰介于 380nm~430nm之间， 所述第二 LED芯片 102 激发所述荧光材料层 103发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第 一 LED芯片 101及所述第二 LED芯片 102均激发所述荧光材料层 103发光， 所述第 二色温低于所述第一色温。
[0104] 具体的， 在该示例中， 设置所述第一 LED芯片 101的发光波长介于 380nm~430n m之间， 如图 4所示， 其可以激发红粉发出红光， 设置所述第二 LED芯片 101的波 长介于 440nm~460nm之间， 如图 5所示， 其可以激发绿粉发出绿光， 其中， 所述 滤光材料层 104均覆盖在两种芯片的表面， 如图 3所示， 滤光材料层 104的吸收峰 介于 380nm~430nm之间， 此时， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯 片 101发出的光被吸收掉， 第二 LED芯片 102激发绿色荧光粉发出绿光， 即第一色 温的光为高色温的光， 显示为冷色， 所述 LED灯丝结构点亮所述预设时间后， 所 述第一 LED芯片 101也可以激发荧光粉发光， 激发红粉发出红光， 从而使得 LED 灯丝发出的光中， 红粉激发比率上升， 整个灯丝色温变低。
[0105] 另外， 所述 LED灯丝结构刚点亮时， 只有一种 LED芯片发出的光可以导致整个 LED灯丝结构发光， 当经历所述预设时间所述滤光材料层 104透明稳定后， 两种 芯片的发出的光均可导致整个 LED灯丝结构发光， 因此， 实现了整个 LED灯丝结 构亮度的逐渐上升。
[0106] 作为示例， 所述第一 LED芯片 101的发光波长介于 380nm~430nm之间， 所述第 二 LED芯片 102的发光波长介于 440nm~460nm之间， 所述滤光材料层 104的吸收 峰介于 440nm~460nm之间， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯片 101 激发所述荧光材料层 103发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第 一 LED芯片 101及所述第二 LED芯片 102均激发所述荧光材料层 103发光， 所述第 二色温高于所述第一色温。
[0107] 具体的， 在该示例中， 设置所述第一 LED芯片 101的发光波长介于 380nm~430n m之间， 如图 4所示， 其可以激发红粉发出红光， 设置所述第二 LED芯片 101的波 长介于 440nm~460nm之间， 如图 5所示， 其可以激发绿粉发出绿光， 其中， 所述 滤光材料层 104均覆盖在两种芯片的表面， 如图 3所示， 滤光材料层 104的吸收峰 介于 440nm~460nm之间， 此时， 所述 LED灯丝结构刚点亮时， 所述第二 LED芯 片 102发出的光被吸收掉， 第一 LED芯片 101激发红色荧光粉发出红光， 即第一色 温的光为低色温的光， 显示为暖色， 所述 LED灯丝结构点亮所述预设时间后， 所 述第二 LED芯片 102也可以激发荧光粉发光， 激发绿粉发出绿光， 从而使得 LED 灯丝发出的光中， 绿粉激发比率上升， 整个灯丝色温变高。
[0108] 另外， 所述 LED灯丝结构刚点亮时， 只有一种 LED芯片发出的光可以导致整个 LED灯丝结构发光， 当经历所述预设时间所述滤光材料层 104透明稳定后， 两种 芯片的发出的光均可导致整个 LED灯丝结构发光， 因此， 实现了整个 LED灯丝结 构亮度的逐渐上升。
[0109] 作为示例， 所述 LED灯丝结构达到所述第二色温的发光状态时， 所述滤光材料 层 104的透射率随施加到所述 LED灯丝结构上的电流的增大而变高， 且所述预设 时间随施加到所述 LED灯丝结构上的电流的增大而变短。
[0110] 具体的， 当施加到整个所述 LED灯丝结构的电流增大时， 此时， 流经第一 LED 芯片 101及第二 LED芯片 102的电流均增大， 从而， 当功率较低时， 发光或者发热 都比较少， 滤光材料层变化不完全； 当功率较大时， 滤光材料层完全转变为对 应的另一吸收态， 相应的透射率变高， 即所述滤光材料层的吸收态变化比较彻 底明显， 使得 LED灯丝结构的色温、 亮度等变化更加明显， 同时， 也使得滤光材 料层发生吸收状态变化达到另一吸收态的稳定态时所需的所述预设时间减少， 其中， 施加电流的大小可以依据实际需求而设定。
[0111] 另外， 本发明还提供一种 LED照明灯， 所述 LED照明灯包括如上述任意一种方 案所述的 LED灯丝结构， 所述 LED灯丝结构的数量以及与所述 LED照明灯安装的 方式依据本领域普通技术人员熟知的方式及实际需求而设定。
[0112] 综上所述， 本发明提供一种 LED灯丝结构， 所述 LED灯丝结构包括： 基板； LE D芯片组件， 设置于所述基板上， 所述 LED芯片组件包括至少一个第一 LED芯片 及至少一个第二 LED芯片， 且相邻的 LED芯片之间具有间距； 荧光材料层， 设置 于所述基板上， 且所述荧光材料层包覆各所述 LED芯片； 以及滤光材料层， 覆盖 于所述第一 LED芯片及所述第二 LED芯片中至少一者的表面， 所述 LED灯丝结构 刚点亮时， 所述滤光材料层具有一吸收态， 使得所述第一 LED芯片及所述第二 L ED芯片中的一者激发所述荧光材料层发出第一色温的光， 所述 LED灯丝结构点 亮预设时间后， 所述滤光材料层具有另一吸收态， 使得所述第一 LED芯片及所述 第二 LED芯片均激发所述荧光材料层发出第二色温的光， 其中， 所述第二色温与 所述第一色温不同。 通过上述方案， 本发明的 LED灯丝结构， 通过不同波长的第 一 LED芯片、 第二 LED芯片以及滤光材料层的共同作用， 通过环境的改变， 如光 、 热等的改变， 达到灯丝灯的色温以及亮度的改变， 从而使得本发明的 LED灯丝 结构及基于其的 LED照明灯更接近白炽灯， 结构简单、 易于实现， 且生产工艺和 白炽灯接近， 利于生产。 所以， 本发明有效克服了现有技术中的种种缺点而具 高度产业利用价值。
[0113] 上述实施例仅例示性说明本发明的原理及其功效， 而非用于限制本发明。 任何 熟悉此技术的人士皆可在不违背本发明的精神及范畴下， 对上述实施例进行修 饰或改变。 因此， 举凡所属技术领域中具有通常知识者在未脱离本发明所揭示 的精神与技术思想下所完成的一切等效修饰或改变， 仍应由本发明的权利要求 所涵盖。

Claims

权利要求书
[权利要求 1] 一种 LED灯丝结构， 其特征在于， 所述 LED灯丝结构包括：
基板；
LED芯片组件， 设置于所述基板上， 所述 LED芯片组件包括至少一个 第一 LED芯片及至少一个第二 LED芯片， 且相邻的 LED芯片之间具有 间距；
荧光材料层， 设置于所述基板上， 且所述荧光材料层包覆各所述 LED 芯片； 以及
滤光材料层， 所述滤光材料层覆盖于所述第一 LED芯片及所述第二 L ED芯片中任意一者的表面， 所述 LED灯丝结构刚点亮时， 所述滤光 材料层不透光， 使得未覆盖所述滤光材料层的 LED芯片发出的光激发 所述荧光材料层发出第一色温的光； 所述 LED灯丝结构点亮后的预设 时间内， 所述滤光材料层逐渐变为透明， 使得所述第一 LED芯片及所 述第二 LED芯片发出的光均可激发所述荧光材料层发出第二色温的光 ， 其中， 所述第二色温与所述第一色温不同。
[权利要求 2] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片的发光波长介于 440nm~460nm之间， 所述第二 LED芯片的发光波长 介于 470nm~550nm之间， 所述滤光材料层覆盖于所述第一 LED芯片的 表面， 所述 LED灯丝结构刚点亮时， 所述第二 LED芯片激发所述荧光 材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED 芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温 高于所述第一色温。
[权利要求 3] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片的发光波长介于 440nm~460nm之间， 所述第二 LED芯片的发光波长 介于 470nm~550nm之间， 所述滤光材料层覆盖于所述第二 LED芯片的 表面， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯片激发所述荧光 材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED 芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温 低于所述第一色温。
[权利要求 4] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片的发光波长介于 380nm~430nm之间， 所述第二 LED芯片的发光波长 介于 440nm~460nm之间， 所述滤光材料层覆盖于所述第一 LED芯片的 表面， 所述 LED灯丝结构刚点亮时， 所述第二 LED芯片激发所述荧光 材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED 芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温 低于所述第一色温。
[权利要求 5] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片的发光波长介于 380nm~430nm之间， 所述第二 LED芯片的发光波长 介于 440nm~460nm之间， 所述滤光材料层覆盖于所述第二 LED芯片的 表面， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯片激发所述荧光 材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED 芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温 高于所述第一色温。
[权利要求 6] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述 LED灯丝结 构达到所述第二色温的发光状态时， 所述滤光材料层的透射率随施加 到所述 LED灯丝结构上的电流的增大而变高； 所述预设时间随施加到 所述 LED灯丝结构上的电流的增大而变短。
[权利要求 7] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片及所述第二 LED芯片均设置于所述基板的同一侧， 且所述第一 LED 芯片与所述第二 LED芯片呈交替等间距排布。
[权利要求 8] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述荧光材料层 包括胶层及荧光粉， 所述胶层的材料包括硅胶及环氧树脂中至少一种 ， 所述荧光粉至少包括红粉和绿粉。
[权利要求 9] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述滤光材料层 包括光致变化材料层及热致变化材料层中的任意一种。
[权利要求 10] 根据权利要求 1所述的 LED灯丝结构， 其特征在于， 所述第一色温下 光显示为暖色调， 所述第二色温下光显示为冷色调； 或者， 所述第一 色温下光显示为冷色调， 所述第二色温下光显示为暖色调。
11.一种 LH）灯丝结构， 其特征在于， 所述 LED灯丝结构包括： 基板；
LED芯片组件， 设置于所述基板上， 所述 LED芯片组件包括至少一个 第一 LED芯片及至少一个第二 LED芯片， 且相邻的 LED芯片之间具有 间距；
荧光材料层， 设置于所述基板上， 且所述荧光材料层包覆各所述 LED 芯片； 以及
滤光材料层， 所述滤光材料层覆盖于所述第一 LED芯片及所述第二 L ED芯片的表面， 所述 LED灯丝结构刚点亮时， 所述滤光材料层的吸 收峰与所述第一 LED芯片及所述第二 LED芯片中一者的发光波长相等 ， 以吸收对应所述 LED芯片发出的光， 使得吸收峰与所述滤光材料层 不同的 LED芯片发出的光激发所述荧光材料层发出第一色温的光； 所 述 LED灯丝结构点亮后的预设时间内， 所述滤光材料层的吸收峰逐渐 消失或者红移， 使得所述第一 LED芯片及所述第二 LED芯片发出的光 均可激发所述荧光材料层发出第二色温的光， 其中， 所述第二色温与 所述第一色温不同。
[权利要求 12] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片的发光波长介于 440nm~460nm之间， 所述第二 LED芯片的发光波长 介于 470nm~550nm之间， 所述 LED灯丝结构刚点亮时， 所述滤光材料 层的吸收峰介于 440nm~460nm之间， 所述第二 LED芯片激发所述変光 材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED 芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温 高于所述第一色温。
[权利要求 13] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片的发光波长介于 440nm~460nm之间， 所述第二 LED芯片的发光波长 介于 470nm~550nm之间， 所述 LED灯丝结构刚点亮时， 所述滤光材料 层的吸收峰介于 470nm~550nm之间， 所述第一 LED芯片激发所述荧光 材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED 芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温 低于所述第一色温。
[权利要求 14] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片的发光波长介于 380nm~430nm之间， 所述第二 LED芯片的发光波长 介于 440nm~460nm之间， 所述 LED灯丝结构刚点亮时， 所述滤光材料 层的吸收峰介于 380nm~430nm之间， 所述第二 LED芯片激发所述荧光 材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 LED 芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二色温 低于所述第一色温。
[权利要求 15] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片的发光波长介于 380nm~430nm之间， 所述第二 LED芯片的发光波长 介于 440nm~460nm之间， 所述滤光材料层的吸收峰介于 440nm~460n m之间， 所述 LED灯丝结构刚点亮时， 所述第一 LED芯片激发所述荧 光材料层发光， 所述 LED灯丝结构点亮所述预设时间后， 所述第一 L ED芯片及所述第二 LED芯片均激发所述荧光材料层发光， 所述第二 色温高于所述第一色温。
[权利要求 16] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述 LED灯丝结 构达到所述第二色温的发光状态时， 所述滤光材料层的透射率随施加 到所述 LED灯丝结构上的电流的增大而变高； 所述预设时间随施加到 所述 LED灯丝结构上的电流的增大而变短。
[权利要求 17] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述第一 LED芯 片及所述第二 LED芯片均设置于所述基板的同一侧， 且所述第一 LED 芯片与所述第二 LED芯片呈交替等间距排布。
[权利要求 18] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述荧光材料层 包括胶层及荧光粉， 所述胶层的材料包括硅胶及环氧树脂中至少一种 ， 所述荧光粉至少包括红粉和绿粉。
[权利要求 19] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述滤光材料层 包括光致变化材料层及热致变化材料层中的任意一种。
[权利要求 20] 根据权利要求 11所述的 LED灯丝结构， 其特征在于， 所述第一色温下 光显示为暖色调， 所述第二色温下光显示为冷色调； 或者， 所述第一 色温下光显示为冷色调， 所述第二色温下光显示为暖色调。
[权利要求 21] 一种 LED照明灯， 其特征在于， 所述 LED照明灯包括如权利要求 1~20 中任意一项所述的 LED灯丝结构。
PCT/CN2019/072024 2018-03-21 2019-01-16 Led灯丝结构及基于其的led照明灯 WO2019179228A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN108561764B (zh) * 2018-03-21 2019-11-22 厦门市三安光电科技有限公司 Led灯丝结构及基于其的led照明灯
EP3942607A1 (en) * 2019-03-18 2022-01-26 Intematix Corporation Led-filament

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101482235A (zh) * 2009-01-22 2009-07-15 深圳市聚飞光电有限公司 色温可调整的高显色led灯及其制造方法
US20120056209A1 (en) * 2010-09-06 2012-03-08 Kabushiki Kaisha Toshiba Light emitting device
JP2012119270A (ja) * 2010-12-03 2012-06-21 Sharp Corp 光の色温度変更方法及び照明装置
CN105423149A (zh) * 2015-12-25 2016-03-23 广州市添鑫光电有限公司 一种高效led智能光源
US20160169460A1 (en) * 2014-12-16 2016-06-16 Citizen Electronics Co., Ltd. Light emitting device
CN108561764A (zh) * 2018-03-21 2018-09-21 厦门市三安光电科技有限公司 Led灯丝结构及基于其的led照明灯

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101026210A (zh) * 2006-02-24 2007-08-29 方础光电科技股份有限公司 半导体芯片封装结构及其封装方法
CN102112803A (zh) * 2008-08-07 2011-06-29 皇家飞利浦电子股份有限公司 具有动态光效果的照明设备
CN102486262A (zh) * 2010-12-01 2012-06-06 鸿富锦精密工业（深圳）有限公司 可调整色温的led光源
DE102011084406B3 (de) * 2011-10-13 2013-04-11 Osram Gmbh Konversionselement und Anordnung mit mindestens einer Leuchtdiode und einem Konversionselement
DE102012205461A1 (de) * 2012-04-03 2013-10-10 Osram Gmbh Led-chip mit temperaturabhängiger wellenlänge
KR20140033724A (ko) * 2012-09-10 2014-03-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그의 제조 방법
US9347648B2 (en) * 2013-08-28 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting apparatus with transmission control
TWI513938B (zh) * 2014-10-01 2015-12-21 錼創科技股份有限公司 光學模組
CN104344329A (zh) * 2014-10-27 2015-02-11 立达信绿色照明股份有限公司 热致变色led灯
CN205938606U (zh) * 2016-07-14 2017-02-08 绍兴亮剑光电科技有限公司 Led光源
US11177422B2 (en) * 2018-08-16 2021-11-16 Savant Technologies Llc LED filament with colored off state masking

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101482235A (zh) * 2009-01-22 2009-07-15 深圳市聚飞光电有限公司 色温可调整的高显色led灯及其制造方法
US20120056209A1 (en) * 2010-09-06 2012-03-08 Kabushiki Kaisha Toshiba Light emitting device
JP2012119270A (ja) * 2010-12-03 2012-06-21 Sharp Corp 光の色温度変更方法及び照明装置
US20160169460A1 (en) * 2014-12-16 2016-06-16 Citizen Electronics Co., Ltd. Light emitting device
CN105423149A (zh) * 2015-12-25 2016-03-23 广州市添鑫光电有限公司 一种高效led智能光源
CN108561764A (zh) * 2018-03-21 2018-09-21 厦门市三安光电科技有限公司 Led灯丝结构及基于其的led照明灯

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