WO2019159561A1 - Élément d'imagerie à semi-conducteur, dispositif électronique et procédé de fabrication d'élément d'imagerie à semi-conducteur - Google Patents

Élément d'imagerie à semi-conducteur, dispositif électronique et procédé de fabrication d'élément d'imagerie à semi-conducteur Download PDF

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WO2019159561A1
WO2019159561A1 PCT/JP2019/000044 JP2019000044W WO2019159561A1 WO 2019159561 A1 WO2019159561 A1 WO 2019159561A1 JP 2019000044 W JP2019000044 W JP 2019000044W WO 2019159561 A1 WO2019159561 A1 WO 2019159561A1
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layer
strong interference
solid
state imaging
photoelectric conversion
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PCT/JP2019/000044
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English (en)
Japanese (ja)
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戸田 淳
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ソニーセミコンダクタソリューションズ株式会社
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/28Interference filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith

Definitions

  • the present technology relates to a solid-state image sensor, an electronic device, and a method for manufacturing the solid-state image sensor.
  • the present invention relates to a solid-state imaging device in which a photoelectric conversion element is arranged on the back surface with respect to the surface on which wiring is performed, an electronic device, and a method for manufacturing the solid-state imaging device.
  • solid-state imaging devices are used for imaging image data in imaging devices and the like.
  • a solid-state imaging device has been proposed in which a surface on which wiring is performed is a front surface and a photoelectric conversion element is disposed on the back surface with respect to the front surface (see, for example, Patent Document 1).
  • Such a structure of the solid-state imaging device is called a backside illumination type.
  • the structure in which the photoelectric conversion element is arranged on the surface is called a surface irradiation type.
  • the sensitivity can be made higher than that of the front-illuminated type.
  • the light transmitted through the photoelectric conversion element may be reflected by the wiring to generate reflected light.
  • the ripple means a phenomenon that the spectrum vibrates in the spectral spectrum which is a distribution of light intensity (spectrum) for each wavelength. If this ripple is large, it is desirable to suppress the ripple because the authentication accuracy decreases when performing biometric authentication using the spectrum.
  • the present technology has been created in view of such a situation, and an object thereof is to suppress reflected light reflected by a wiring in a back-illuminated solid-state imaging device.
  • the present technology has been made to solve the above-described problems.
  • the first aspect of the present technology is a photoelectric conversion layer that photoelectrically converts incident light to generate an electrical signal, and a signal that transmits the electrical signal.
  • a wiring layer to which a line is wired, a first reflected light that is formed between the photoelectric conversion layer and the wiring layer, and the incident light is reflected by a first surface that is closer to the photoelectric conversion layer among both surfaces;
  • the magnitude relationship between the refractive index of the strong interference layer and the refractive index of the first medium in contact with the first surface is expressed by the refractive index of the strong interference layer and the second surface.
  • the magnitude relationship with the refractive index of the second medium in contact may be the same.
  • the thickness of the strong interference layer is such that the optical path difference between the first reflected light and the second reflected light is shifted by a half wavelength of the incident light and the reflected light reflected on the lower surface is reflected. It may be a value that satisfies the bright line condition that the phase is inverted. This brings about the effect
  • the strong interference layer may include one of silicon nitride and tantalum oxide. This brings about the effect
  • the strong interference layer may contain titanium oxide. This brings about the effect
  • the strong interference layer may include polysilicon. This brings about the effect
  • the strong interference layer may include amorphous silicon. This brings about the effect
  • a plurality of strong interference layers may be disposed between the photoelectric conversion layer and the wiring layer. This brings about the effect that the reflectance is higher than that in the case of a single strong interference layer.
  • the optical filter may further include an optical filter that transmits light having a predetermined wavelength and enters the photoelectric conversion layer as the incident light. This brings about the effect
  • an on-chip lens that collects light and guides it to the photoelectric conversion layer can be further provided. As a result, the ripple is reduced.
  • the second aspect of the present technology includes a photoelectric conversion layer that photoelectrically converts incident light to generate an electrical signal, a wiring layer in which a signal line that transmits the electrical signal is wired, the photoelectric conversion layer, and the above
  • the first reflected light formed between the wiring layers and reflected by the first surface of the both surfaces closer to the photoelectric conversion layer and the second surface of the both surfaces closer to the wiring layer.
  • the electronic apparatus includes: a strong interference layer that interferes with and strengthens the second reflected light reflected by the incident light; and a signal processing unit that performs predetermined signal processing on the electrical signal. Accordingly, there is an effect that predetermined signal processing is performed on the electrical signal from the wiring layer below the strong interference layer whose reflectance is increased by the interference between the first reflected light and the second reflected light.
  • a cover glass may be further provided, and the incident light may be incident on the photoelectric conversion layer through the cover glass and a predetermined gas. This brings about the effect that the reflectance of the strong interference layer is increased in a solid-state imaging device without an on-chip lens.
  • the present technology it is possible to achieve an excellent effect that it is possible to suppress the reflected light reflected by the wiring in the back-illuminated solid-state imaging device.
  • the effects described here are not necessarily limited, and may be any of the effects described in the present disclosure.
  • FIG. 1 is an example of a cross-sectional view of a solid-state imaging device after formation of a strong interference layer and before formation of a through plug electrode in the first embodiment of the present technology.
  • FIG. 3 is an example of a cross-sectional view of a solid-state imaging device after wiring plug formation and before wiring in the first embodiment of the present technology. It is an example of a sectional view of the solid-state image sensor after wiring in a 1st embodiment of this art. 3 is a flowchart illustrating an example of a method for manufacturing a solid-state imaging element according to the first embodiment of the present technology. It is an example of sectional drawing of a reflective layer in a 2nd embodiment of this art.
  • FIG. 1 is a block diagram illustrating a configuration example of the electronic device 100 according to the first embodiment of the present technology.
  • the electronic device 100 is a device that captures image data, and includes a camera module 110, a signal processing unit 120, and a display unit 130.
  • a smartphone having an imaging function, a camera mounted on a drone, or the like is assumed.
  • the camera module 110 captures image data in synchronization with a vertical scanning signal or the like.
  • the camera module 110 supplies image data to the signal processing unit 120 via a signal line 119.
  • the signal processing unit 120 performs predetermined signal processing on the image data.
  • the signal processing unit 120 supplies the processing result to the display unit 130 via the signal line 129.
  • the display unit 130 displays the processing result.
  • FIG. 2 is an example of a cross-sectional view of the camera module 110 according to the first embodiment of the present technology.
  • the camera module 110 includes a cover glass 111, a solid-state image sensor 200, and a support substrate 113.
  • a predetermined direction parallel to the light receiving surface of the cover glass 111 or the solid-state imaging device 200 is defined as an X direction
  • a direction perpendicular to the light receiving surface is defined as a Z direction
  • a direction perpendicular to the X direction and the Z direction is taken as a Y direction.
  • the cross-sectional view of the same figure is a view seen from the Y direction.
  • the cover glass 111 protects the light receiving surface of the solid-state imaging device 200.
  • a predetermined gas such as air or dry nitrogen gas is filled between the cover glass 111 and the solid-state imaging device 200.
  • the solid-state imaging element 200 is connected to the support substrate 113 via the wire 112.
  • FIG. 3 is a block diagram illustrating a configuration example of the solid-state imaging device 200 according to the first embodiment of the present technology.
  • the solid-state imaging device 200 includes a vertical driving unit 210, a pixel array unit 220, a timing control unit 230, a column signal processing unit 240, and a horizontal driving unit 250.
  • a plurality of pixels 221 are arranged in a two-dimensional grid.
  • a set of pixels 221 arranged in the horizontal direction is referred to as “row”, and a set of pixels 221 arranged in the direction perpendicular to the row is referred to as “column”.
  • Each pixel 221 photoelectrically converts incident light to generate a pixel signal, which is supplied to the column signal processing unit 240.
  • the timing control unit 230 controls the operation timings of the vertical drive unit 210, the column signal processing unit 240, and the horizontal drive unit 250 in synchronization with the vertical synchronization signal VSYNC.
  • the vertical driving unit 210 sequentially drives the rows and outputs pixel signals.
  • the column signal processing unit 240 performs AD (Analog-to-Digital) conversion processing, CDS (Correlated Double-Sampling) processing, and the like on the pixel signal from the pixel array unit 220 for each column.
  • the column signal processing unit 240 outputs the processed pixel signal to the signal processing unit 120 according to the control of the vertical driving unit 210.
  • the horizontal driving unit 250 sequentially selects a column and outputs a pixel signal of the column.
  • FIG. 4 is an example of a cross-sectional view of the solid-state imaging device 200 according to the first embodiment of the present technology.
  • the photoelectric conversion layer 310, the reflective layer 320, and the wiring layer 330 are arranged for each pixel 221 in order from the top with the direction from the solid-state imaging device 200 to the cover glass 111 as the upward direction.
  • an element isolation region 351 is provided between adjacent pixels 221 in the photoelectric conversion layer 310.
  • the photoelectric conversion layer 310 generates electric signals by photoelectrically converting incident light.
  • the reflective layer 320 is a layer that reflects incident light with a predetermined reflectance.
  • a silicon dioxide layer 321, a silicon nitride layer 322, a silicon dioxide layer 323, a silicon nitride layer 324, and a silicon dioxide layer 325 are disposed in this order from the top.
  • the silicon nitride layers 322 and 324 are layers made of silicon nitride such as Si 3 N 4 .
  • the silicon dioxide layer 323 is a layer made of silicon dioxide (SiO 2 ).
  • a gate electrode 352 is disposed in the reflective layer 320 immediately below the silicon dioxide layer 321.
  • a through plug electrode 353 is disposed directly below the gate electrode 352 so as to penetrate a part of the reflective layer 320.
  • signal lines such as the signal line 331 are wired. These signal lines transmit electrical signals generated by the photoelectric conversion layer 310.
  • Such a configuration of the solid-state imaging device 200 is called a backside illumination type.
  • the generation mechanism of the spectrum vibration (ripple) generated in long wavelength light (mainly from red light to infrared region) will be described.
  • the reflectance of the reflective layer 320 is low, the reflected light reflected by the upper surface of the reflective layer 320 and the reflected light reflected by the signal line in the wiring layer 330 may interfere with each other to generate ripples.
  • a thick solid line indicates incident light incident on the upper surface of the reflective layer 320 and its reflected light.
  • a dotted line indicates incident light that has entered the wiring layer 330 and reflected light that has been reflected by the signal line.
  • the wavelength interval ⁇ between the m-th order (m is an integer) and the (m + 1) -th order when the lights strengthen each other is expressed by the following expression.
  • ⁇ / (4n) ⁇ (4 ⁇ n + ⁇ / d ′) Equation 1
  • represents the wavelength of incident light, and the unit is, for example, nanometer (nm).
  • n is the refractive index of a medium (such as silicon dioxide) between the two reflecting surfaces.
  • ⁇ n is a difference in refractive index with respect to the wavelength of the medium sandwiching the reflecting surface, and indicates refractive index wavelength dispersion.
  • d ′ represents the distance between the two reflecting surfaces, and the unit is, for example, nanometers (nm).
  • Equation 1 there is a wavelength where reflected light strengthens due to interference and a wavelength where the reflected light weakens, resulting in ripples with strong and weak vibrations in the spectral characteristics.
  • the silicon nitride layer 324 that satisfies a predetermined condition for increasing the reflectance is disposed. This condition will be described later. Thereby, the reflectance of the reflective layer 320 can be made higher than the case where the silicon nitride layer 324 is not disposed. By improving the reflectance of the reflective layer 320, color mixing, PRNU noise, and ripple can be suppressed.
  • the reflectance can be increased by inserting a metal thin film such as aluminum, this configuration is not preferable. This is because the metal thin film has high conductivity and a dark current may flow, and the light absorption rate is high and the sensitivity may decrease.
  • FIG. 5 is an example of a cross-sectional view of the reflective layer 320 according to the first embodiment of the present technology.
  • the refractive indexes of the silicon dioxide layer 321, the silicon nitride layer 322, the silicon dioxide layer 323, and the silicon nitride layer 324 in the reflective layer 320 are n 2 , n 1 , n 2, and n 3 , respectively, and the thicknesses thereof are Let d 0 , d 1 , d 2 and d 3 .
  • the refractive index of the silicon dioxide layer 325 is the same as that of the silicon dioxide layer 321.
  • a thick arrow indicates incident light on the upper surface of the silicon nitride layer 324 and reflected light for the light. Dotted arrows indicate light incident on the lower surface of the silicon nitride layer 322 and reflected light for the light.
  • At least one of the layers in the reflective layer 320 (for example, the silicon nitride layer 324) satisfies an HR (High Reflection) condition.
  • the HR condition means that both the predetermined condition regarding the refractive index and the bright line condition are satisfied.
  • the former condition regarding the refractive index is that the relationship between the refractive index of a layer and the refractive index of the medium in contact with the upper surface of the layer is as follows: the refractive index of the layer and the refractive index of the medium in contact with the lower surface of the layer It is the same as the magnitude relationship between and.
  • the refractive index n 3 of the silicon nitride layer 324, the refractive index n 2 of the medium in contact with the upper surface, to the refractive index satisfies both the refractive index n 2 of the following two formulas of the medium in contact with the lower surface
  • n 2 ′ the refractive index of the lower medium
  • the bright line condition is that the optical path difference between the reflected light reflected from the upper surface of the layer and the reflected light reflected from the lower surface of the layer is shifted by the half wavelength of the incident light, and the phase of the reflected light reflected from the lower surface is inverted. It is to be. In this case, the reflected lights strengthen each other.
  • the thickness d 3 of the silicon nitride layer 324 substantially matches the value represented by the following formula.
  • substantially match means that the difference between the actual thickness and the value indicated by the formula is within an allowable range.
  • the phase of the reflected light reflected from the upper surface of the silicon nitride layer 324 is the same as that of the reflected light reflected from the lower surface of the layer. That is, the reflected lights interfere and reinforce each other.
  • the degree of interference becomes the largest.
  • At least one of the silicon dioxide layer 321, the silicon nitride layer 322, the silicon dioxide layer 323, and the silicon nitride layer 324 in the reflective layer 320 satisfies the HR condition.
  • the silicon nitride layer 324 satisfies the HR condition, and the remaining layers are not satisfied.
  • a layer satisfying the HR condition such as the silicon nitride layer 3234
  • the reflected light reflected on the upper surface and the lower surface interfere with each other and strengthen each other. Therefore, such a layer is hereinafter referred to as a “strong interference layer”. Called.
  • the silicon nitride layer 324 is disposed as a strong interference layer
  • a layer other than silicon nitride can be disposed instead as long as it is a dielectric that satisfies the HR condition.
  • a tantalum oxide layer may be disposed as a strong interference layer.
  • the thicknesses of the silicon dioxide layer 321, the silicon nitride layer 322, the silicon dioxide layer 323, and the silicon nitride layer 324 are set to 10, 60, 20, and 83 nanometers (nm), respectively. Of these thicknesses, only 83 nanometers (nm) satisfy the bright line condition and the rest do not.
  • the strong interference layer covers the entire surface of the pixel. However, even if the strong interference layer is partially missing, the effect of improving the reflectance occurs. When the strong interference layer covers a part of the pixel, it is desirable to cover at least the vicinity of the center of the pixel.
  • FIG. 6 is an example of a cross-sectional view of the reflective layer 320 having two strong interference layers according to the first embodiment of the present technology.
  • the layer satisfying the HR condition (strengthening) (that is, the strong interference layer) is not limited to one layer.
  • the silicon dioxide layer 323 thereon is also a strong interference layer that satisfies the HR condition.
  • the refractive index n 2 of the silicon dioxide layer 323 satisfies both of the following two expressions. n 2 ⁇ n 3 n 2 ⁇ n 1
  • the silicon dioxide layer 321 and the silicon nitride layer 322 satisfy a dark line condition that does not cause an optical path difference between the reflected light reflected from the upper surface of the layer and the reflected light reflected from the lower surface of the layer.
  • the thicknesses of the silicon dioxide layer 321, the silicon nitride layer 322, the silicon dioxide layer 323, and the silicon nitride layer 324 are set to 10, 156, 107, and 83 nanometers (nm), respectively. Of these thicknesses, only 107 and 83 nanometers (nm) satisfy the bright line condition and the rest satisfy the dark line condition.
  • FIG. 7 is an example of a cross-sectional view of the reflective layer 320 having four strong interference layers according to the first embodiment of the present technology.
  • the layer satisfying the HR condition (strengthening) (that is, the strong interference layer) is not limited to one layer or two layers.
  • the silicon dioxide layer 321 and the silicon nitride layer 322 are also strong interference layers that satisfy the HR condition.
  • the silicon dioxide layer 321 and the silicon nitride layer 322 also satisfy the bright line condition. That is, all four layers satisfy the HR condition.
  • the refractive index of the silicon nitride layer 324 is 1.88.
  • the thicknesses of the silicon dioxide layer 321, the silicon nitride layer 322, the silicon dioxide layer 323, and the silicon nitride layer 324 are 107, 83, 107, and 83 nanometers (nm) so as to satisfy the various conditions.
  • the thickness of the layer is set to 79 nanometers (nm), for example.
  • FIG. 8 is a graph illustrating an example of the transmittance for each wavelength according to the first embodiment of the present technology.
  • the vertical axis indicates the transmittance
  • the horizontal axis indicates the wavelength.
  • the transmittance in the figure is estimated by, for example, the Fresnel coefficient method.
  • the dotted line indicates the transmittance characteristics of the comparative example in which the strong interference layer is not provided, and the one-dot chain line indicates the characteristics of the reflective layer 320 having one strong interference layer.
  • a 10 nanometer (nm) silicon layer and a 60 nanometer (nm) silicon nitride layer are disposed between the photoelectric conversion layer and the wiring layer.
  • the two-dot chain line indicates the characteristics of the reflective layer 320 with two strong interference layers
  • the solid line indicates the characteristics of the reflective layer 320 with four strong interference layers.
  • the transmittance is lower than in the case where the strong interference layer is not provided. Also, the greater the number of strong interference layers, the lower the transmittance.
  • FIG. 9 is a graph illustrating an example of the reflectance for each wavelength according to the first embodiment of the present technology.
  • the vertical axis indicates the reflectance
  • the horizontal axis indicates the wavelength.
  • the reflectivity in the figure is estimated by, for example, the Fresnel coefficient method.
  • the dotted line indicates the reflectance characteristics of the comparative example in which the strong interference layer is not provided, and the one-dot chain line indicates the characteristics of the reflective layer 320 having one strong interference layer.
  • the two-dot chain line indicates the characteristics of the reflective layer 320 with two strong interference layers, and the solid line indicates the characteristics of the reflective layer 320 with four strong interference layers.
  • the reflectance is higher than when no strong interference layer is provided. Also, the greater the number of strong interference layers, the higher the reflectivity.
  • a reflectance of 0.6 is obtained when the wavelength of incident light is 620 nanometers (nm).
  • FIG. 10 is an example of a cross-sectional view of the solid-state imaging device 200 before the formation of the gate electrode according to the first embodiment of the present technology.
  • the manufacturing system selectively forms the gate electrode 352 using the lithography technique while leaving the resist film.
  • the manufacturing system forms a silicon nitride layer 322 with a predetermined thickness on the entire substrate.
  • the film formation method here may be a chemical vapor deposition method (CVD: Chemical Vapor Deposition) or a sputter vapor deposition method.
  • FIG. 11 is an example of a cross-sectional view of the solid-state imaging device 200 after the formation of the gate electrode 352 and before the formation of the strong interference layer (silicon nitride layer 324) in the first embodiment of the present technology.
  • the manufacturing system forms a silicon dioxide layer 323, a silicon nitride layer 324, and a silicon dioxide layer 325 with a predetermined thickness.
  • the film forming method here may be a chemical vapor deposition method or a sputter vapor deposition method. After these films are formed, the manufacturing system flattens the substrate using a technique such as CMP (Chemical Mechanical Polishing).
  • FIG. 12 is an example of a cross-sectional view of the solid-state imaging device 200 after the formation of the strong interference layer and before the formation of the through plug electrode 353 in the first embodiment of the present technology.
  • the manufacturing system leaves a resist film using a lithography technique, selectively dry-processes to make a hole in the gate electrode 352, and further deposits a through plug electrode 353.
  • the material of the through plug electrode 353 may be a tungsten (W) material or another metal material.
  • the manufacturing system removes the resist film and planarizes by CMP or the like.
  • FIG. 13 is an example of a cross-sectional view of the solid-state imaging device 200 before the wiring after the through plug electrode 353 is formed in the first embodiment of the present technology. Then, the manufacturing system wires the signal line 331 and the like by a normal CMOS: (Complementary Metal Oxide Semiconductor) process.
  • the material of these signal lines is, for example, aluminum (Al) or copper (Cu).
  • FIG. 14 is an example of a cross-sectional view of the solid-state imaging device 200 after wiring according to the first embodiment of the present technology.
  • FIG. 15 is a flowchart illustrating an example of a method for manufacturing the solid-state imaging device 200 according to the first embodiment of the present technology. This manufacturing method is started, for example, when a silicon substrate is placed in a manufacturing system.
  • the manufacturing system separates the pixels by the element isolation region 351, and forms a silicon dioxide layer 321 with a specified thickness on the silicon substrate (step S901). Then, the manufacturing system forms the gate electrode 352 (step S902), and forms the silicon dioxide layer 323, the silicon nitride layer 324 (strong interference layer), and the silicon dioxide layer 325 (step S903).
  • the manufacturing system forms the through plug electrode 353 (step S904) and wires the signal line 331 and the like (step S905). After step S905, the manufacturing system ends the manufacturing of the solid-state imaging device 200.
  • the strong interference layer (silicon nitride layer 324) in which the reflected light interferes and strengthens each other is disposed in the reflective layer 320, the strong interference layer is provided.
  • the reflectance of the reflective layer 320 can be improved as compared with the case where there is not. Therefore, the reflected light reflected by the wiring below the reflective layer 320 can be suppressed.
  • color mixing, PRNU noise, and ripple can be suppressed by suppressing the reflected light.
  • the silicon nitride layer 324 is disposed as a strong interference layer.
  • the silicon nitride layer 324 may have insufficient reflectance.
  • the solid-state imaging device 200 of the second embodiment is different from the first embodiment in that the reflectance is improved by disposing a titanium oxide layer as a strong interference layer.
  • FIG. 16 is an example of a cross-sectional view of the reflective layer 320 according to the second embodiment of the present technology.
  • the reflective layer 320 of the second embodiment is different from the first embodiment in that a titanium oxide layer 326 is disposed instead of the silicon nitride layer 324.
  • the titanium oxide layer 326 is a layer made of titanium oxide such as titanium dioxide (TiO 2 ).
  • the titanium oxide layer 326 is a strong interference layer that satisfies the HR condition. For example, if the refractive index of the titanium oxide layer 326 is 2.73, the thickness is set to 57 nanometers (nm).
  • the silicon dioxide layer 323 thereon may be a strong interference layer that satisfies the HR condition.
  • all of the silicon dioxide layer 321, the silicon nitride layer 322, the silicon dioxide layer 323, and the titanium oxide layer 326 may be strong interference layers that satisfy the HR condition.
  • FIG. 17 is a graph illustrating an example of the transmittance for each wavelength according to the second embodiment of the present technology.
  • the vertical axis indicates the transmittance
  • the horizontal axis indicates the wavelength.
  • the transmittance in the figure is estimated by, for example, the Fresnel coefficient method.
  • the dotted line indicates the transmittance characteristics of the comparative example in which the strong interference layer is not provided
  • the one-dot chain line indicates the characteristics of the reflective layer 320 having one strong interference layer.
  • the two-dot chain line indicates the characteristics of the reflective layer 320 with two strong interference layers
  • the solid line indicates the characteristics of the reflective layer 320 with four strong interference layers.
  • FIG. 18 is a graph illustrating an example of the reflectance for each wavelength according to the second embodiment of the present technology.
  • the vertical axis indicates the reflectance
  • the horizontal axis indicates the wavelength.
  • the reflectivity in the figure is estimated by, for example, the Fresnel coefficient method.
  • the dotted line indicates the reflectance characteristics of the comparative example in which the strong interference layer is not provided
  • the one-dot chain line indicates the characteristics of the reflective layer 320 having one strong interference layer.
  • the two-dot chain line indicates the characteristics of the reflective layer 320 with two strong interference layers
  • the solid line indicates the characteristics of the reflective layer 320 with four strong interference layers.
  • the provision of the titanium oxide layer 326 increases the reflectance as compared with the case of providing the silicon nitride layer 324.
  • all of the four layers are strong interference layers, for example, a reflectance of 0.8 is obtained when the wavelength of incident light is 620 nanometers (nm).
  • the reflective layer 320 is compared with the case where the silicon nitride layer 324 is disposed. The reflectance can be improved.
  • the silicon nitride layer 324 is disposed as a strong interference layer.
  • the silicon nitride layer 324 may have insufficient reflectance.
  • the solid-state imaging device 200 of the third embodiment is different from the first embodiment in that the reflectance is improved by arranging a polysilicon layer as a strong interference layer.
  • FIG. 19 is an example of a cross-sectional view of the reflective layer 320 according to the second embodiment of the present technology.
  • the reflective layer 320 of the second embodiment is different from the first embodiment in that a polysilicon layer 327 is disposed instead of the silicon nitride layer 324.
  • the polysilicon layer 327 is a layer made of polysilicon.
  • the polysilicon layer 327 is a strong interference layer that satisfies the HR condition. For example, when the refractive index of the polysilicon layer 327 is 3.9, the thickness is set to 42 nanometers (nm).
  • the silicon dioxide layer 323 thereon may be a strong interference layer that satisfies the HR condition.
  • all of the silicon dioxide layer 321, the silicon nitride layer 322, the silicon dioxide layer 323, and the polysilicon layer 327 may be strong interference layers that satisfy the HR condition.
  • FIG. 20 is a graph illustrating an example of the transmittance for each wavelength in the third embodiment of the present technology.
  • the vertical axis indicates the transmittance
  • the horizontal axis indicates the wavelength.
  • the transmittance in the figure is estimated by, for example, the Fresnel coefficient method.
  • the dotted line indicates the transmittance characteristics of the comparative example in which the strong interference layer is not provided
  • the one-dot chain line indicates the characteristics of the reflective layer 320 having one strong interference layer.
  • the two-dot chain line indicates the characteristics of the reflective layer 320 with two strong interference layers
  • the solid line indicates the characteristics of the reflective layer 320 with four strong interference layers.
  • FIG. 21 is a graph illustrating an example of the reflectance for each wavelength according to the third embodiment of the present technology.
  • the vertical axis indicates the reflectance
  • the horizontal axis indicates the wavelength.
  • the reflectivity in the figure is estimated by, for example, the Fresnel coefficient method.
  • the dotted line indicates the reflectance characteristics of the comparative example in which the strong interference layer is not provided
  • the one-dot chain line indicates the characteristics of the reflective layer 320 having one strong interference layer.
  • the two-dot chain line indicates the characteristics of the reflective layer 320 with two strong interference layers
  • the solid line indicates the characteristics of the reflective layer 320 with four strong interference layers.
  • the provision of the polysilicon layer 327 increases the reflectance as compared with the case where the silicon nitride layer 324 is provided.
  • the silicon nitride layer 324 is provided.
  • all four layers are strong interference layers, for example, a reflectance of less than 0.9 is obtained when the wavelength of incident light is 620 nanometers (nm).
  • the reflective layer 320 is compared with the case where the silicon nitride layer 324 is disposed. The reflectance can be improved.
  • the silicon nitride layer 324 is disposed as a strong interference layer.
  • the silicon nitride layer 324 may have insufficient reflectance.
  • the solid-state imaging device 200 according to the fourth embodiment is different from the first embodiment in that the reflectance is improved by disposing an amorphous silicon layer as a strong interference layer.
  • FIG. 22 is an example of a cross-sectional view of the reflective layer 320 according to the fourth embodiment of the present technology.
  • the reflective layer 320 of the second embodiment is different from that of the first embodiment in that an amorphous silicon layer 328 is disposed instead of the silicon nitride layer 324.
  • the amorphous silicon layer 328 is a layer made of amorphous silicon.
  • the amorphous silicon layer 328 is a strong interference layer that satisfies the HR condition. For example, when the refractive index of the amorphous silicon layer 328 is 4.23, the thickness is set to 37 nanometers (nm).
  • the silicon dioxide layer 323 thereon may be a strong interference layer that satisfies the HR condition.
  • all of the silicon dioxide layer 321, the silicon nitride layer 322, the silicon dioxide layer 323, and the amorphous silicon layer 328 may be strong interference layers that satisfy the HR condition.
  • FIG. 23 is a graph illustrating an example of the transmittance for each wavelength according to the fourth embodiment of the present technology.
  • the vertical axis indicates the transmittance
  • the horizontal axis indicates the wavelength.
  • the transmittance in the figure is estimated by, for example, the Fresnel coefficient method.
  • the dotted line indicates the transmittance characteristics of the comparative example in which the strong interference layer is not provided
  • the one-dot chain line indicates the characteristics of the reflective layer 320 having one strong interference layer.
  • the two-dot chain line indicates the characteristics of the reflective layer 320 with two strong interference layers
  • the solid line indicates the characteristics of the reflective layer 320 with four strong interference layers.
  • FIG. 24 is a graph illustrating an example of the reflectance for each wavelength according to the fourth embodiment of the present technology.
  • the vertical axis indicates the reflectance
  • the horizontal axis indicates the wavelength.
  • the reflectivity in the figure is estimated by, for example, the Fresnel coefficient method.
  • the dotted line indicates the reflectance characteristics of the comparative example in which the strong interference layer is not provided
  • the one-dot chain line indicates the characteristics of the reflective layer 320 having one strong interference layer.
  • the two-dot chain line indicates the characteristics of the reflective layer 320 with two strong interference layers
  • the solid line indicates the characteristics of the reflective layer 320 with four strong interference layers.
  • the provision of the amorphous silicon layer 328 increases the reflectance as compared with the case where the silicon nitride layer 324 is provided.
  • the silicon nitride layer 324 is provided.
  • all the four layers are strong interference layers, for example, a reflectance of 0.9 is obtained when the wavelength of incident light is 620 nanometers (nm).
  • the refractive index of the strongest interference layer in the lowermost layer and the reflectance when the strong interference layer is one layer, two layers, and four layers are shown in the following table. Show.
  • the transmittance and the reflectance are values when the wavelength ⁇ of incident light is 620 nanometers (nm).
  • the reflection of the reflective layer 320 is more preferably made of titanium oxide as in the second embodiment than the strongest interference layer of the lowermost layer is made of silicon nitride such as Si 3 N 4. The rate increases overall.
  • the reflectance of the reflective layer 320 is generally higher when polysilicon is used as in the third embodiment than when the lowermost strong interference layer is made of titanium oxide.
  • the reflectance of the reflective layer 320 is generally higher when amorphous silicon is used as in the fourth embodiment than when the lowermost strong interference layer is polysilicon.
  • the reflective layer 320 is compared with the case where the silicon nitride layer 324 is disposed. The reflectance can be improved.
  • FIG. 25 is an example of a cross-sectional view of the pixel 221 according to the fifth embodiment of the present technology.
  • the pixel 221 of the fifth embodiment includes antireflection films 411 and 419, a transparent resin layer 412, silicon oxynitride layers 413 and 415, a silicon nitride layer 414, silicon dioxide layers 416 and 417, A light shielding film 418 is further provided.
  • the pixel 221 further includes a surface plasmon resonance filter 420.
  • the antireflection film 411, the transparent resin layer 412, the silicon oxynitride layer 413, the silicon nitride layer 414, the silicon oxynitride layer 415, the silicon dioxide layer 417, the antireflection film 419, and the photoelectric conversion layer 310 are sequentially arranged from the top. Are stacked.
  • a light shielding film 418 is disposed in the vicinity of the outer periphery of the silicon dioxide layer 417.
  • the configuration of the lower layer of the photoelectric conversion layer 310 is the same as that of the first embodiment.
  • the refractive indexes of the silicon oxynitride layer 413, the silicon nitride layer 414, and the silicon oxynitride layer 415 are different, and the reflectance of the layer in which these layers are stacked can be adjusted by changing the thickness of these layers. it can.
  • the silicon oxynitride layer 415 functions as a passivation layer that prevents oxidation of aluminum used in the surface plasmon resonance filter 420.
  • the surface plasmon resonance filter 420 is an optical filter that transmits light of a predetermined wavelength using a surface plasmon resonance phenomenon in which surface plasmon and light resonate.
  • plasmon means a state in which light hits a metal fine particle and the electric electrons inside the metal fine particle are shaken to change the electric field, and free electrons are biased.
  • Surface plasmon is a plasmon generated on the metal surface. Point to. Details of the structure of the surface plasmon resonance filter 420 will be described later.
  • the light shielding film 418 shields light from adjacent pixels and is provided to prevent color mixing.
  • the surface plasmon resonance filter 420 is disposed as an optical filter, an optical filter other than the surface plasmon resonance filter 420 such as a Fabry-Perot resonator may be disposed.
  • the surface plasmon resonance filter 420 is an example of an optical filter described in the claims.
  • FIG. 26 is an example of a plan view of the surface plasmon resonance filter 420 according to the first embodiment of the present technology.
  • the surface plasmon resonance filter 420 is a thin film made of aluminum (Al) or the like in which a plurality of holes 421 are formed at regular intervals. The interval between adjacent holes 421 is called a “period”. By changing the diameter D of the hole 421 and the period P, the transmission spectrum and its peak wavelength can be adjusted.
  • a thin film of gold (Au) or silver (Ag) can be used instead of aluminum.
  • a dielectric such as an oxide film may be disposed in the upper or lower layer of the surface plasmon resonance filter 420 or in the hole 421.
  • the pixel array unit 220 is divided into a plurality of pixel blocks, and a plurality of pixels 221 are arranged in a two-dimensional lattice pattern in each pixel block.
  • a surface plasmon resonance filter 420 having a different diameter and / or period is disposed for each pixel 221.
  • the surface plasmon resonance filter 420 can split the light into n wavelength components.
  • the surface plasmon resonance filter 420 that transmits light of a predetermined wavelength is disposed in each of the pixels 221, and therefore, the spectrum can be split into a plurality of wavelength components (colors). it can.
  • the OCL-less solid-state imaging device 200 in which no OCL (On-Chip micro-Lenses) is arranged is used.
  • the ripple cannot be sufficiently reduced. There is a fear.
  • the solid-state imaging device 200 according to the sixth embodiment is different from the first embodiment in that an on-chip lens is arranged for each pixel 221.
  • FIG. 27 is an example of a cross-sectional view of the pixel 221 according to the sixth embodiment of the present technology.
  • the pixel 221 of the sixth embodiment differs from the first embodiment in that it further includes an on-chip lens 431, an on-chip color filter 432, a silicon dioxide layer 417, a light shielding film 418, and an antireflection film 419.
  • an on-chip lens 431, an on-chip color filter 432, a silicon dioxide layer 417, an antireflection film 419, and a photoelectric conversion layer 310 are stacked in order from the top.
  • a light shielding film 418 is disposed in the vicinity of the outer periphery of the silicon dioxide layer 417.
  • the configuration of the lower layer of the photoelectric conversion layer 310 is the same as that of the first embodiment.
  • the on-chip lens 431 When the on-chip lens 431 is provided, light vertically incident near the center of the lens is directly incident on the silicon dioxide layer 417 or the like as it is, but light incident on a position shifted from the center is incident obliquely. Become. At this time, the light incident in the oblique direction changes the optical path length with respect to the vertically incident light, so that the ripple causes a wavelength shift. Therefore, since different lights are incident on one photoelectric conversion layer 310 at the same time, they appear to be integrated and the ripple is reduced. However, the oblique incident component causes a demerit that the peak wavelength causes a long wavelength shift and changes to broad spectroscopy.
  • the on-chip lens 431 is arranged for each pixel 221, the light that is vertically incident near the center of the lens and the light that is incident on a position deviated from the center. And are accumulated. Thereby, a ripple can be relieved.
  • FIG. 28 is a block diagram illustrating a configuration example of an imaging device as an electronic apparatus to which the present technology is applied.
  • An imaging apparatus 2001 shown in FIG. 28 includes an optical system 2002, a shutter apparatus 2003, a solid-state imaging element 2004, a control circuit 2005, a signal processing circuit 2006, a monitor 2007, and a memory 2008, and displays a still image and a moving image. Imaging is possible.
  • the optical system 2002 is configured to include one or more layers of lenses, and guides light (incident light) from a subject to the solid-state image sensor 2004 and forms an image on the light-receiving surface of the solid-state image sensor 2004.
  • the shutter device 2003 is disposed between the optical system 2002 and the solid-state image sensor 2004, and controls the light irradiation period and the light-shielding period to the solid-state image sensor 2004 according to the control of the control circuit 2005.
  • the solid-state imaging device 2004 is configured by a package including the above-described solid-state imaging device.
  • the solid-state image sensor 2004 accumulates signal charges for a certain period in accordance with light imaged on the light receiving surface via the optical system 2002 and the shutter device 2003.
  • the signal charge accumulated in the solid-state image sensor 2004 is transferred according to a drive signal (timing signal) supplied from the control circuit 2005.
  • the control circuit 2005 outputs a drive signal for controlling the transfer operation of the solid-state image sensor 2004 and the shutter operation of the shutter device 2003 to drive the solid-state image sensor 2004 and the shutter device 2003.
  • the signal processing circuit 2006 performs various types of signal processing on the signal charges output from the solid-state imaging device 2004.
  • An image (image data) obtained by performing signal processing by the signal processing circuit 2006 is supplied to the monitor 2007 and displayed or supplied to the memory 2008 and stored (recorded).
  • FIG. 29 is a diagram illustrating a usage example in which the solid-state imaging device 200 of FIG. 3 is used.
  • the camera module described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows.
  • Devices for taking images for viewing such as digital cameras and mobile devices with camera functions
  • Devices used for traffic such as in-vehicle sensors that capture the back, surroundings, and interiors of vehicles, surveillance cameras that monitor traveling vehicles and roads, and ranging sensors that measure distances between vehicles, etc.
  • Equipment used for home appliances such as TVs, refrigerators, air conditioners, etc. to take pictures and operate the equipment according to the gestures ⁇ Endoscopes, equipment that performs blood vessel photography by receiving infrared light, etc.
  • Equipment used for medical and health care ⁇ Security equipment such as security surveillance cameras and personal authentication cameras ⁇ Skin measuring instrument for photographing skin and scalp photography Such as a microscope to do beauty Equipment used for sports-Equipment used for sports such as action cameras and wearable cameras for sports applications-Used for agriculture such as cameras for monitoring the condition of fields and crops apparatus
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device that is mounted on any type of mobile body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, and a robot. May be.
  • FIG. 30 is a block diagram illustrating a schematic configuration example of a vehicle control system that is an example of a mobile control system to which the technology according to the present disclosure can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, a vehicle exterior information detection unit 12030, a vehicle interior information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, a sound image output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated as a functional configuration of the integrated control unit 12050.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 includes a driving force generator for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism that adjusts and a braking device that generates a braking force of the vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a headlamp, a back lamp, a brake lamp, a blinker, or a fog lamp.
  • the body control unit 12020 can be input with radio waves transmitted from a portable device that substitutes for a key or signals from various switches.
  • the body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, a lamp, and the like of the vehicle.
  • the vehicle outside information detection unit 12030 detects information outside the vehicle on which the vehicle control system 12000 is mounted.
  • the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030.
  • the vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image.
  • the vehicle outside information detection unit 12030 may perform an object detection process or a distance detection process such as a person, a car, an obstacle, a sign, or a character on a road surface based on the received image.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of received light.
  • the imaging unit 12031 can output an electrical signal as an image, or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared rays.
  • the vehicle interior information detection unit 12040 detects vehicle interior information.
  • a driver state detection unit 12041 that detects a driver's state is connected to the in-vehicle information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the vehicle interior information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated or it may be determined whether the driver is asleep.
  • the microcomputer 12051 calculates a control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside / outside the vehicle acquired by the vehicle outside information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit A control command can be output to 12010.
  • the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, tracking based on inter-vehicle distance, vehicle speed maintenance traveling, vehicle collision warning, or vehicle lane departure warning. It is possible to perform cooperative control for the purpose.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform cooperative control for the purpose of automatic driving that autonomously travels without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on information outside the vehicle acquired by the vehicle outside information detection unit 12030.
  • the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare, such as switching from a high beam to a low beam. It can be carried out.
  • the sound image output unit 12052 transmits an output signal of at least one of sound and image to an output device capable of visually or audibly notifying information to a vehicle occupant or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices.
  • the display unit 12062 may include at least one of an on-board display and a head-up display, for example.
  • FIG. 31 is a diagram illustrating an example of an installation position of the imaging unit 12031.
  • the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.
  • the imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as a front nose, a side mirror, a rear bumper, a back door, and an upper part of a windshield in the vehicle interior of the vehicle 12100.
  • the imaging unit 12101 provided in the front nose and the imaging unit 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided in the side mirror mainly acquire an image of the side of the vehicle 12100.
  • the imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image behind the vehicle 12100.
  • the imaging unit 12105 provided on the upper part of the windshield in the passenger compartment is mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 31 shows an example of the shooting range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided in the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided in the side mirrors, respectively
  • the imaging range 12114 The imaging range of the imaging part 12104 provided in the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, an overhead image when the vehicle 12100 is viewed from above is obtained.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.
  • the microcomputer 12051 based on the distance information obtained from the imaging units 12101 to 12104, the distance to each three-dimensional object in the imaging range 12111 to 12114 and the temporal change in this distance (relative speed with respect to the vehicle 12100).
  • a predetermined speed for example, 0 km / h or more
  • the microcomputer 12051 can set an inter-vehicle distance to be secured in advance before the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like.
  • automatic brake control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • cooperative control for the purpose of autonomous driving or the like autonomously traveling without depending on the operation of the driver can be performed.
  • the microcomputer 12051 converts the three-dimensional object data related to the three-dimensional object to other three-dimensional objects such as a two-wheeled vehicle, a normal vehicle, a large vehicle, a pedestrian, and a utility pole based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles.
  • the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see.
  • the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is connected via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration or avoidance steering via the drive system control unit 12010, driving assistance for collision avoidance can be performed.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the captured images of the imaging units 12101 to 12104. Such pedestrian recognition is, for example, whether or not the user is a pedestrian by performing a pattern matching process on a sequence of feature points indicating the outline of an object and a procedure for extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras. It is carried out by the procedure for determining.
  • the audio image output unit 12052 When the microcomputer 12051 determines that there is a pedestrian in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 has a rectangular contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to be superimposed and displayed.
  • voice image output part 12052 may control the display part 12062 so that the icon etc. which show a pedestrian may be displayed on a desired position.
  • the technology according to the present disclosure may be applied to the imaging unit 12031, for example.
  • the solid-state imaging device 200 illustrated in FIG. 3 can be applied to the imaging unit 12031.
  • this technique can also take the following structures.
  • a photoelectric conversion layer that photoelectrically converts incident light to generate an electrical signal;
  • the first reflected light formed between the photoelectric conversion layer and the wiring layer and reflected by the incident light on the first surface closer to the photoelectric conversion layer of both surfaces, and the one of the both surfaces closer to the wiring layer
  • a solid-state imaging device comprising: a strong interference layer that interferes with and strengthens the second reflected light reflected by the incident light on the second surface.
  • the magnitude relationship between the refractive index of the strong interference layer and the refractive index of the first medium in contact with the first surface is the refraction of the second medium in contact with the refractive index of the strong interference layer and the second surface.
  • the solid-state imaging device according to (1) which has the same magnitude relationship with the rate.
  • the thickness of the strong interference layer is such that the optical path difference between the first reflected light and the second reflected light is shifted by a half wavelength of the incident light, and the phase of the reflected light reflected from the lower surface is reversed.
  • the solid-state imaging device according to (1) or (2) which is a value that satisfies a condition.
  • the solid-state imaging device includes any one of (1) to (3), wherein the strong interference layer includes one of silicon nitride and tantalum oxide.
  • the solid-state imaging device includes titanium oxide.
  • the solid-state imaging device includes polysilicon.
  • the solid-state imaging device includes amorphous silicon.
  • the solid-state imaging device according to any one of (1) to (7), wherein a plurality of the strong interference layers are disposed between the photoelectric conversion layer and the wiring layer.
  • the solid-state imaging device according to any one of (1) to (8), further including an optical filter that transmits light having a predetermined wavelength and enters the photoelectric conversion layer as the incident light.
  • the solid-state imaging device according to any one of (1) to (9), further including an on-chip lens that collects light and guides the light to the photoelectric conversion layer.
  • a photoelectric conversion layer that photoelectrically converts incident light to generate an electrical signal
  • the first reflected light formed between the photoelectric conversion layer and the wiring layer and reflected by the incident light on the first surface closer to the photoelectric conversion layer of both surfaces, and the one of the both surfaces closer to the wiring layer
  • An electronic apparatus comprising: a signal processing unit that performs predetermined signal processing on the electrical signal. (12) further comprising a cover glass; The electronic device according to (11), wherein the incident light is incident on the photoelectric conversion layer through the cover glass and a predetermined gas.

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Abstract

L'invention concerne un élément d'imagerie à semi-conducteurs rétro-éclairé, dans lequel la lumière de réflexion réfléchie par le câblage est réduite au minimum. L'élément d'imagerie à semi-conducteurs comprend une couche de conversion photoélectrique, une couche de câblage et une couche d'interférence robuste. La couche de conversion photoélectrique réalise une conversion photoélectrique sur une lumière incidente et génère un signal électrique. Un fil de signal pour transmettre un signal électrique est acheminé dans la couche de câblage. Une couche d'interférence robuste est formée entre la couche de conversion photoélectrique et la couche de câblage. Une première lumière de réflexion produite par réflexion de la lumière incidente par une première surface, qui est la surface parmi les deux surfaces de la couche d'interférence robuste qui est plus proche de la couche de conversion photoélectrique, et une seconde lumière de réflexion produite par réflexion de la lumière incidente par une seconde surface, qui est la surface parmi les deux surfaces de la couche d'interférence robuste qui est plus proche de la couche de câblage, interfèrent l'une avec l'autre et se renforcent mutuellement.
PCT/JP2019/000044 2018-02-13 2019-01-07 Élément d'imagerie à semi-conducteur, dispositif électronique et procédé de fabrication d'élément d'imagerie à semi-conducteur WO2019159561A1 (fr)

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