WO2019150445A1 - Film-form adhesive, method for producing same, and semiconductor device and method for producing same - Google Patents

Film-form adhesive, method for producing same, and semiconductor device and method for producing same Download PDF

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Publication number
WO2019150445A1
WO2019150445A1 PCT/JP2018/003022 JP2018003022W WO2019150445A1 WO 2019150445 A1 WO2019150445 A1 WO 2019150445A1 JP 2018003022 W JP2018003022 W JP 2018003022W WO 2019150445 A1 WO2019150445 A1 WO 2019150445A1
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WO
WIPO (PCT)
Prior art keywords
film
adhesive
semiconductor element
wire
mass
Prior art date
Application number
PCT/JP2018/003022
Other languages
French (fr)
Japanese (ja)
Inventor
大輔 舛野
祐樹 中村
慎太郎 橋本
健太 菊地
智陽 山崎
Original Assignee
日立化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to CN201880087615.9A priority Critical patent/CN111656499A/en
Priority to SG11202007034UA priority patent/SG11202007034UA/en
Priority to PCT/JP2018/003022 priority patent/WO2019150445A1/en
Priority to KR1020207022892A priority patent/KR102491831B1/en
Priority to JP2019568438A priority patent/JP7028264B2/en
Priority to TW108101899A priority patent/TW201936828A/en
Publication of WO2019150445A1 publication Critical patent/WO2019150445A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a film adhesive and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof.
  • silver paste is mainly used for joining a semiconductor chip and a support member for mounting the semiconductor chip.
  • the support members used are also required to be miniaturized and densified.
  • problems such as occurrence of defects during wire bonding due to protrusion of the paste or inclination of the semiconductor chip, difficulty in controlling the film thickness, and generation of voids may occur.
  • a film adhesive for joining a semiconductor chip and a support member has been used (see, for example, Patent Document 1).
  • an adhesive sheet comprising a dicing tape and a film adhesive laminated on the dicing tape
  • the film adhesive is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is separated into pieces by dicing.
  • a semiconductor chip with an adhesive can be obtained.
  • the obtained semiconductor chip with a film adhesive can be attached to a support member via a film adhesive and bonded by thermocompression bonding.
  • the film-like adhesive is used as FOW (Film Over Wire) which is a wire-embedded film-like adhesive or FOD (Film Over Die) which is a semiconductor chip-embedded film-like adhesive
  • FOW Flexible Over Wire
  • FOD Fin Off Die
  • high fluidity is required at the time of thermocompression bonding. Therefore, the frequency and amount of bleed tend to increase further. In some cases, the bleed may occur even on the upper surface of the semiconductor chip, which may lead to electrical failure or wire bonding failure.
  • the present invention has been made in view of such circumstances, and has as its main object to provide a film adhesive capable of suppressing bleeding while having good embedding properties during thermocompression bonding. To do.
  • One aspect of the present invention is a semiconductor device in which a first semiconductor element is wire-bonded to a substrate via a first wire, and a second semiconductor element is pressure-bonded on the first semiconductor element.
  • a film-like adhesive used for pressure-bonding the second semiconductor element and embedding at least a part of the first wire, the first adhesive film being laminated on the first adhesive film A second adhesive film, the solvent content of the film adhesive is 1.5% by mass or less based on the total amount of the film adhesive, and the shear viscosity at 80 ° C. of the film adhesive is 5000 Pa ⁇ s.
  • the following film-like adhesive is provided. According to such a film adhesive, it is possible to suppress bleed while having good embedding property at the time of thermocompression bonding.
  • the thickness of the film adhesive may be 3 to 150 ⁇ m.
  • the storage elastic modulus at 80 ° C. of the film adhesive may be 10 MPa or less.
  • the present invention is a method for producing the above-described film-like adhesive, wherein a varnish of a first adhesive composition containing a solvent is applied onto a substrate, and the applied first adhesive A step of producing a first adhesive film having a solvent content of 1.5% by mass or less based on the total amount of the first adhesive film, and a solvent;
  • the varnish of the second adhesive composition to be applied is applied onto the substrate, the varnish of the applied second adhesive composition is heated and dried at 50 to 150 ° C., and the solvent content is the total amount of the second adhesive film
  • the manufacturing method of a film adhesive provided with the process of producing the 2nd adhesive film which is 1.5 mass% or less on the basis of, and the process of bonding a 1st adhesive film and a 2nd adhesive film I will provide a.
  • the present invention provides a first semiconductor element connected to a substrate via a first wire by wire bonding, and the second semiconductor element is formed on the first semiconductor element in the above-described film form.
  • a semiconductor device in which at least a part of a first wire is embedded in a film adhesive by being pressure-bonded via an adhesive. Even if the semiconductor device is a wire-embedded semiconductor device in which at least a part of the first wire is embedded in a film adhesive, the first wire and the first semiconductor chip are attached to the adhesive film.
  • An embedded chip semiconductor device may be used.
  • the present invention provides a wire bonding step of electrically connecting a first semiconductor element to a substrate via a first wire, and the film adhesive described above on one side of the second semiconductor element.
  • a die bonding process in which at least a part of the first wire is embedded in the film adhesive by press-bonding the second semiconductor element to which the film adhesive is applied and the second semiconductor element to which the film adhesive is applied through the film adhesive.
  • a method of manufacturing a semiconductor device comprising the steps.
  • a film adhesive capable of suppressing bleed while having good embedding property at the time of thermocompression bonding. Moreover, according to this invention, the manufacturing method of such a film adhesive, the semiconductor device using such a film adhesive, and its manufacturing method are provided.
  • FIG. 1 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. It is a schematic cross section which shows a series of processes of
  • (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto.
  • FIG. 1 is a schematic cross-sectional view showing a film adhesive according to an embodiment.
  • the film adhesive 10 includes a first adhesive film 2 and a second adhesive film 4 laminated on the first adhesive film 2.
  • the first adhesive film 2 and the second adhesive film 4 are both thermosetting, and can undergo a semi-cured (B stage) state and a fully cured product (C stage) state after the curing process.
  • the adhesive composition and the second adhesive composition can be formed into a film shape.
  • the film adhesive 10 can be produced by laminating the obtained first adhesive film 2 and second adhesive film 4.
  • the first adhesive film 2 and the second adhesive film 4 constituting the film adhesive 10 include a thermosetting resin (hereinafter sometimes simply referred to as “component (a)”) and a high molecular weight component (hereinafter referred to as “component (a)”). It is preferable to contain only “(b) component”) and an inorganic filler (hereinafter sometimes simply referred to as “(c) component”).
  • the first adhesive film 2 and the second adhesive film 4 include a coupling agent (hereinafter sometimes simply referred to as “(d) component”) and a curing accelerator (hereinafter simply referred to as “(e) component”). In some cases).
  • the solvent used when forming the 1st adhesive film 2 and the 2nd adhesive film 4 may remain
  • the solvent content of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less based on the total amount of the film adhesive.
  • the first adhesive film 2 and the second adhesive film 4 may be the same film or different films, but are preferably the same film.
  • the component (a) is an epoxy resin (hereinafter sometimes simply referred to as “(a1) component”) and a phenol resin that can be a curing agent for the epoxy resin (hereinafter simply referred to as “component (a2)”). In some cases).
  • the component (a1) can be used without particular limitation as long as it has an epoxy group in the molecule.
  • the component (a1) for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type Epoxy resin, dicyclopentadiene skeleton-containing epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy Resin, naphthalene type epoxy resin, polyfunctional phenols, polycyclic aromatic diglycidyl ether compounds such as anthracene, etc.You may use these individually by 1 type or in combination of 2 or more types.
  • the component (a1) may be a cresol novolac type
  • the epoxy equivalent of the component (a1) may be 90 to 300 g / eq, 110 to 290 g / eq, or 130 to 280 g / eq.
  • the epoxy equivalent of the component (a1) is in such a range, the fluidity tends to be ensured while maintaining the bulk strength of the film adhesive.
  • the content of the component (a1) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part.
  • the content of the component (a1) is 5 parts by mass or more, the embedding property of the film adhesive tends to be better. It exists in the tendency which can suppress generation
  • the component (a2) can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule.
  • examples of the component (a2) include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol, and dihydroxynaphthalene.
  • Phenols such as novolak-type phenolic resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolak, phenol and the like obtained by condensation or cocondensation with a compound having an aldehyde group such as formaldehyde under an acidic catalyst And / or phenol aralkyl resins and naphthol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl. You may use these individually by 1 type or in combination of 2 or more types.
  • the component (a2) may be a phenol aralkyl resin, a naphthol aralkyl resin, or a novolac type phenol resin from the viewpoint of hygroscopicity and heat resistance.
  • the hydroxyl equivalent of the component (a2) may be 80 to 250 g / eq, 90 to 200 g / eq, or 100 to 180 g / eq.
  • the adhesive strength tends to be maintained higher while maintaining the fluidity of the film adhesive.
  • the softening point of the component (a2) may be 50 to 140 ° C, 55 to 120 ° C, or 60 to 100 ° C.
  • the content of the component (a2) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part.
  • the content of the component (a2) is 5 parts by mass or more, better curability tends to be obtained.
  • the content of the component (a2) is 50 parts by mass or less, the embedding property of the film adhesive tends to be better.
  • the ratio of the epoxy equivalent of component (a1) to the hydroxyl equivalent of component (a2) is 0.30 / 0.70 from the viewpoint of curability. ⁇ 0.70 / 0.30, 0.35 / 0.65 ⁇ 0.65 / 0.35, 0.40 / 0.60 ⁇ 0.60 / 0.40, or 0.45 / 0.55 ⁇ It may be 0.55 / 0.45.
  • the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained.
  • the equivalent ratio is 0.70 / 0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
  • the component (b) preferably has a glass transition temperature (Tg) of 50 ° C. or lower.
  • component (b) examples include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins, and modified products thereof.
  • the component may contain an acrylic resin from a fluid viewpoint.
  • the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester.
  • the acrylic resin is preferably a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group as a structural unit.
  • the acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile.
  • the glass transition temperature (Tg) of the acrylic resin may be ⁇ 50 to 50 ° C. or ⁇ 30 to 30 ° C. If the Tg of the acrylic resin is ⁇ 50 ° C. or higher, the flexibility of the adhesive composition tends to be prevented from becoming too high. Thereby, it becomes easy to cut
  • the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).
  • the weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3 million or 500,000 to 2 million.
  • Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
  • acrylic resins examples include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-3DB (all Nagase ChemteX Corporation) Company-made).
  • the content of the component (b) is 5 to 70 parts by mass, 10 to 50 parts by mass, or 15 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part.
  • the content of the component (b) is 5 parts by mass or more, it is possible to further improve the control of fluidity during molding and the handleability at high temperatures.
  • the content of component (b) is 70 parts by mass or less, the embedding property can be further improved.
  • component (c) for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, Examples thereof include boron nitride and silica. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (c) may be silica from the viewpoint of compatibility with the resin.
  • the average particle diameter of the component (c) may be 0.005 to 1 ⁇ m or 0.05 to 0.5 ⁇ m from the viewpoint of improving adhesiveness.
  • an average particle diameter means the value calculated
  • the content of the component (c) is 5 to 50 parts by mass, 15 to 45 parts by mass, or 25 to 40 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part.
  • the content of the component (c) is 5 parts by mass or more, the fluidity of the film adhesive tends to be further improved.
  • the content of the component (c) is 50 parts by mass or less, the dicing property of the film adhesive tends to be better.
  • the component (d) may be a silane coupling agent.
  • the silane coupling agent include ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. It is done. You may use these individually by 1 type or in combination of 2 or more types.
  • the content of the component (d) may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total mass of the components (a), (b), and (c).
  • a component is not specifically limited, What is generally used can be used.
  • the component (e) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity, the component (e) may be imidazoles and derivatives thereof.
  • imidazoles examples include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. You may use these individually by 1 type or in combination of 2 or more types.
  • the content of the component (e) may be 0.01 to 1 part by mass with respect to 100 parts by mass of the total mass of the component (a), the component (b), and the component (c).
  • the solvent used when forming the below-mentioned 1st adhesive film 2 and the 2nd adhesive film 4 may remain
  • the solvent is not particularly limited as long as each component can be uniformly dissolved, kneaded or dispersed, and conventionally known solvents can be used.
  • examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
  • the solvent content of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less based on the total amount of the film adhesive.
  • the solvent content may be 1.2 mass% or less, 0.9 mass% or less, or 0.6 mass% or less. When the solvent content is 1.5% by mass or less, bleeding tends to be suppressed.
  • the lower limit of the solvent content is not particularly limited, but may be, for example, 0.01% by mass or more.
  • the thing provided with the 1st adhesive film 2 and the 2nd adhesive film 4 like the film adhesive 10 makes heating-drying conditions high compared with the thing of the same thickness comprised by a single layer. It becomes easy to reduce a solvent content rate.
  • the solvent content rate of the film adhesive 10 can be adjusted by changing the conditions of the heat drying of the varnish of an adhesive composition, for example.
  • the first adhesive film 2 and the second adhesive film 4 may further contain other components.
  • other components include an ion trap agent and a rheology control agent.
  • the content of the other components may be 0.01 to 20 parts by mass with respect to 100 parts by mass as the total mass of the components (a), (b), and (c).
  • the shear viscosity at 80 ° C. of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 5000 Pa ⁇ s or less.
  • the shear viscosity at 80 ° C. may be 3500 Pa ⁇ s or less, 2500 Pa ⁇ s or less, or 1500 Pa ⁇ s or less.
  • the lower limit of the shear viscosity at 80 ° C. is not particularly limited, but may be, for example, 10 Pa ⁇ s or more.
  • the shear viscosity in 80 degreeC can be measured by the method as described in an Example, for example.
  • the shear viscosity at 80 ° C. of the film adhesive 10 tends to depend on, for example, the contents of the above-described component (b) and component (c), and can be adjusted by changing these.
  • the storage elastic modulus at 80 ° C. of the film adhesive 10 may be 10 MPa or less.
  • the storage elastic modulus at 80 ° C. may be 5 MPa or less, 1 MPa or less, or 0.5 MPa or less.
  • the storage elastic modulus at 80 ° C. is 10 MPa or less, the embedding property tends to be excellent.
  • the lower limit value of the storage elastic modulus at 80 ° C. is not particularly limited, but may be, for example, 0.02 MPa or more.
  • the storage elastic modulus at 80 ° C. of the film adhesive 10 can be adjusted, for example, by changing the functional group equivalent of the component (a).
  • the thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be the same or different from each other, but are preferably the same.
  • the thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 2 to 140 ⁇ m, respectively.
  • the thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 5 to 110 ⁇ m, 10 to 90 ⁇ m, or 20 to 60 ⁇ m, respectively. When these thicknesses are each 2 ⁇ m or more, the embedding property tends to be better. When these thicknesses are each 140 ⁇ m or less, the solvent content tends to be further reduced.
  • the thickness of the film adhesive 10 (the total thickness of the first adhesive film 2 and the second adhesive film 4) is unevenness such as the first wire and the first semiconductor element, and the wiring circuit of the substrate. May be 3 to 150 ⁇ m in order to allow sufficient filling.
  • the thickness of the film adhesive 10 may be 20 to 140 m or 40 to 130 ⁇ m. When the thickness of the film adhesive 10 is 3 ⁇ m or more, the embedding property tends to be excellent. When the thickness of the film adhesive 10 is 150 ⁇ m or less, bleeding tends to be further suppressed.
  • the film adhesive 10 may be further laminated with an adhesive film on the first adhesive film 2 and the second adhesive film 4. That is, the film adhesive 10 may include an adhesive film having three or more layers. The adhesive film other than the first adhesive film 2 and the second adhesive film 4 may be the same as the first adhesive film 2 and the second adhesive film 4.
  • a method for producing a film-like adhesive is that a varnish of a first adhesive composition containing a solvent is applied onto a substrate, and the varnish of the applied first adhesive composition is dried by heating at 50 to 150 ° C. And a step of producing a first adhesive film having a solvent content of 1.5% by mass or less based on the total amount of the first adhesive film, and a varnish of the second adhesive composition containing the solvent as a base material A second varnish of the applied second adhesive composition is dried by heating at 50 to 150 ° C., and the solvent content is 1.5% by mass or less based on the total amount of the second adhesive film.
  • the process of producing this adhesive film and the process of bonding a 1st adhesive film and a 2nd adhesive film are provided.
  • the varnish of the first adhesive composition and the varnish of the second adhesive composition are, for example, the components (a) to (e) and, if necessary, the components (d) and (e) in a solvent. It can be prepared by mixing and kneading.
  • Mixing and kneading can be performed by using a normal stirrer, a raking machine, a three-roller, a ball mill, or other disperser and appropriately combining them.
  • the solvent for preparing the varnish of the first adhesive composition and the varnish of the second adhesive composition is not particularly limited as long as it can uniformly dissolve, knead or disperse the above components, and is conventionally known. Things can be used.
  • solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
  • a base film For example, a polyester film, a polypropylene film (OPP film etc.), a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, a methylpentene film etc. are mentioned.
  • a method for applying the varnish of the first adhesive composition and the varnish of the second adhesive composition to the base film known methods can be used, for example, a knife coating method, a roll coating method, a spraying method. Examples thereof include a coating method, a gravure coating method, a bar coating method, and a curtain coating method.
  • the drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized.
  • the drying can be performed by heating at 50 to 150 ° C. for 1 to 30 minutes.
  • the heat drying may be performed by raising the temperature stepwise at a temperature within the range of 50 to 150 ° C. By setting the heating temperature to 50 ° C.
  • the solvent content of the first adhesive film 2 and the second adhesive film 4 (film adhesive 10) is 1.5% by mass or less based on the total amount of the film adhesive. It tends to be easier.
  • the heating temperature is set to 150 ° C. or lower, the curing of the adhesive composition tends to be suppressed.
  • the film adhesive 10 bonds the first adhesive film 2 and the second adhesive film 4 under a predetermined condition (for example, room temperature (20 ° C.) or heated state) using a roll laminator, a vacuum laminator, or the like. Can be produced.
  • a predetermined condition for example, room temperature (20 ° C.) or heated state
  • the film adhesive 10 firstly applies the varnish of the first adhesive composition to the base film, removes the solvent by heating and drying to produce the first adhesive film 2, and then the first adhesive It can also be produced by applying a varnish of the second adhesive composition on the adhesive film 2 and removing the solvent by drying by heating to form a second adhesive film.
  • FIG. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment.
  • the adhesive sheet 100 includes a base film 20 and a film adhesive 10 made of the first adhesive film 2 and the second adhesive film 4 provided on the base film 20.
  • the base film 20 may be a dicing tape.
  • Such an adhesive sheet can be used as a dicing die bonding integrated adhesive sheet. In this case, since the lamination process to the semiconductor wafer is performed once, the work efficiency can be improved.
  • the dicing tape examples include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film.
  • the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary.
  • the dicing tape is preferably one having adhesiveness.
  • Such a dicing tape may be one obtained by imparting adhesiveness to the above-mentioned plastic film, or may be one obtained by providing an adhesive layer on one side of the above-mentioned plastic film.
  • the adhesive sheet 100 first prepares the first adhesive film 2 by preparing a varnish of the first adhesive composition, applying it to the base film, and removing the solvent by heating and drying. Then, separately, the second adhesive film 4 can be produced from the varnish of the second adhesive composition and can be produced by laminating the second adhesive film 4 on the first adhesive film 2.
  • FIG. 3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment.
  • the adhesive sheet 110 further includes a protective film 30 laminated on the surface of the film adhesive 10 opposite to the base film 20 (surface on the second adhesive film 4 side).
  • the protective film 30 may be the same as the base film 20 described above.
  • the thickness of the protective film may be, for example, 60 to 200 ⁇ m or 70 to 170 ⁇ m.
  • FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment.
  • the first semiconductor element Wa in the first stage is wire-bonded to the substrate 14 via the first wire 88, and the second semiconductor element Waa is formed on the first semiconductor element Wa.
  • the semiconductor device is a semiconductor device in which at least a part of the first wire 88 is embedded in the film adhesive 10 by being pressure-bonded via the film adhesive 10.
  • the semiconductor device is a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded even if the semiconductor device is a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded. May be.
  • the substrate 14 and the second semiconductor element Waa are further electrically connected via the second wire 98, and the second semiconductor element Waa is sealed with the sealing material 42. ing.
  • the thickness of the first semiconductor element Wa may be 10 to 170 ⁇ m, and the thickness of the second semiconductor element Waa may be 20 to 400 ⁇ m.
  • the first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200.
  • the substrate 14 is composed of an organic substrate 90 having two circuit patterns 84 and 94 formed on the surface thereof.
  • the first semiconductor element Wa is pressure-bonded onto the circuit pattern 94 via an adhesive 41.
  • the second semiconductor element Waa is interposed via the film adhesive 10 so that the circuit pattern 94, the first semiconductor element Wa, and the circuit pattern 84 to which the first semiconductor element Wa is not bonded are covered. Crimped to the substrate 14.
  • a film adhesive 10 is embedded in the uneven steps due to the circuit patterns 84 and 94 on the substrate 14.
  • the second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed with a resin sealing material 42.
  • a die-bonding step embedded in the adhesive is
  • the semiconductor device 200 is a semiconductor device in which a first wire 88 and a first semiconductor element Wa are embedded, and is manufactured by the following procedure.
  • the first semiconductor element Wa having the adhesive 41 is crimped onto the circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 and the first pattern are connected to each other via the first wire 88.
  • the first semiconductor element Wa is electrically bonded and connected (first wire bonding step).
  • the adhesive sheet 100 is laminated on one side of a semiconductor wafer (for example, thickness: 50 ⁇ m, size: 8 inches), and the base film 20 is peeled off, whereby the film adhesive 10 (for example, on one side of the semiconductor wafer). , Thickness: 135 ⁇ m). Then, after the dicing tape is bonded to the film adhesive 10, the dicing tape is diced to a predetermined size (for example, 7.5 mm square), whereby the second film adhesive 10 is applied as shown in FIG. The semiconductor element Waa is obtained (laminating step).
  • the temperature condition of the laminating process may be 50-100 ° C or 60-80 ° C.
  • the temperature in the laminating step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained.
  • the temperature of the laminating process is 100 ° C. or lower, the film-like adhesive 10 can be prevented from flowing excessively during the laminating process, so that it is possible to prevent a change in thickness and the like.
  • Examples of the dicing method include blade dicing using a rotary blade, and a method of cutting a film adhesive or both a wafer and a film adhesive with a laser.
  • the second semiconductor element Waa to which the film adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is bonded via the first wire 88.
  • the first wire 88 and the first semiconductor element Wa are covered with the second semiconductor element Waa to which the film-like adhesive 10 is attached by the film-like adhesive 10.
  • the second semiconductor element Waa is fixed to the substrate 14 by pressing the second semiconductor element Waa to the substrate 14 (die bonding step).
  • the film adhesive 10 is preferably pressure-bonded for 0.5 to 3.0 seconds under conditions of 80 to 180 ° C. and 0.01 to 0.50 MPa.
  • the film adhesive 10 is pressed and heated for 5 minutes or more under the conditions of 60 to 175 ° C. and 0.3 to 0.7 MPa.
  • the circuit pattern 84, the second wire 98 and the second semiconductor element Waa are sealed with a sealing material 42.
  • the semiconductor device 200 can be manufactured through such steps.
  • the semiconductor device may be a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded.
  • HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 ° C.)
  • SG-70L (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 900,000, Tg: ⁇ 13 ° C.)
  • Example 1 The adhesive composition varnish of Synthesis Example 1 was filtered through a 100 mesh filter and vacuum degassed.
  • the applied varnish was heat-dried in two stages of 90 ° C. for 5 minutes, followed by 140 ° C. for 5 minutes.
  • an adhesive sheet comprising an adhesive film having a thickness of 60 ⁇ m in a B-stage state was obtained on the PET film.
  • two adhesive sheets are prepared, arranged so that the adhesive films are in contact with each other, laminated on a hot plate at 70 ° C., and a film adhesive having a thickness of two layers of 120 ⁇ m is formed.
  • An adhesive sheet provided was prepared.
  • Example 2 Except for changing the varnish of the adhesive composition of Synthesis Example 1 to the varnish of the adhesive composition of Synthesis Example 2, in the same manner as in Example 1, a film-like adhesive having a thickness of 120 ⁇ m consisting of two layers of adhesive films is used. An adhesive sheet comprising the agent was prepared.
  • Example 3 Except for changing the varnish of the adhesive composition of Synthesis Example 1 to the varnish of the adhesive composition of Synthesis Example 3, a film-like adhesive having a thickness of 120 ⁇ m consisting of two layers of adhesive films is the same as Example 1. An adhesive sheet comprising the agent was prepared.
  • Comparative Example 2 Except for changing the two-step heat drying at 90 ° C. for 10 minutes and 150 ° C. for 10 minutes to the two-step heat drying at 120 ° C. for 20 minutes and 160 ° C. for 20 minutes, the same as in Comparative Example 1, On the PET film, an adhesive sheet provided with a film adhesive having a single layer thickness of 120 ⁇ m in a B-stage state was produced.
  • Comparative Example 4 The thickness of the single layer in the B stage state on the PET film in the same manner as in Comparative Example 2 except that the varnish of the adhesive composition of Synthesis Example 1 was changed to the varnish of the adhesive composition of Synthesis Example 3. An adhesive sheet provided with a 120 ⁇ m film adhesive was prepared.
  • the film adhesive of the said adhesive sheet was affixed at 70 degreeC on the semiconductor wafer (8 inches) of thickness 50 micrometers. Next, they were diced to 7.5 mm square to obtain semiconductor elements.
  • a film adhesive HR-9004T-10 manufactured by Hitachi Chemical Co., Ltd., thickness 20 ⁇ m was attached to a semiconductor wafer (8 inches) having a thickness of 50 ⁇ m at 70 ° C. Next, they were diced into 3.0 mm squares to obtain chips.
  • a chip with HR-9004T-10 separated into pieces is pressure-bonded to an evaluation substrate having a maximum surface roughness of 6 ⁇ m under conditions of 130 ° C., 0.20 MPa for 2 seconds, heated at 120 ° C./2 hours, and semi-cured I let you.
  • a 7.5 mm semiconductor element with a film adhesive was pressure-bonded to the sample thus obtained under the conditions of 120 ° C., 0.20 MPa, and 2 seconds.
  • alignment was performed so that the tip with HR-9004T-10 that was previously crimped was centered.
  • the obtained sample was put into a pressure oven, heated from 35 ° C. to 175 ° C. at a heating rate of 3 ° C./min, and heated at 175 ° C. for 30 minutes.
  • the samples thus obtained were observed for the presence or absence of voids using an ultrasonic imaging apparatus SAT (manufactured by Hitachi Construction Machinery, product number FS200II, probe: 25 MHz). If voids were observed, the void area per unit area was calculated, and these analysis results were evaluated as embeddability.
  • the evaluation criteria are as follows. The results are shown in Table 2. A: No void was observed. B: Although voids were observed, the ratio was less than 5 area%. C: A void was observed, and the ratio was 5 area% or more.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Disclosed is a film-form adhesive which is used in a semiconductor device in which a first semiconductor element is connected by wire-bonding on a substrate via a first wire, and a second semiconductor element is attached by pressure to the first semiconductor element. The film-form adhesive is used to pressure-attach the second semiconductor element and embed at least part of at least the first wire. The film-form adhesive comprises a first adhesive film and a second adhesive film laminated onto the first adhesive film. The solvent-content of the film-form adhesive does not exceed 1.5% by mass with respect to the total quantity of film-form adhesive, and the shear viscosity of the film-form adhesive at 80°C does not exceed 5000 Pa·s.

Description

フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法Film adhesive and method for manufacturing the same, and semiconductor device and method for manufacturing the same
　本発明は、フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法に関する。 The present invention relates to a film adhesive and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof.
　従来、半導体チップと半導体チップ搭載用の支持部材との接合には、主に銀ペーストが使用されている。しかし、近年の半導体チップの小型化及び集積化に伴い、使用される支持部材にも小型化及び細密化が要求されるようになってきている。その一方で、銀ペーストを用いる場合では、ペーストのはみ出し又は半導体チップの傾きに起因するワイヤボンディング時における不具合の発生、膜厚制御の困難性、ボイド発生等の問題が生じる場合がある。 Conventionally, silver paste is mainly used for joining a semiconductor chip and a support member for mounting the semiconductor chip. However, with the recent miniaturization and integration of semiconductor chips, the support members used are also required to be miniaturized and densified. On the other hand, when a silver paste is used, problems such as occurrence of defects during wire bonding due to protrusion of the paste or inclination of the semiconductor chip, difficulty in controlling the film thickness, and generation of voids may occur.
　そのため、近年、半導体チップと支持部材とを接合するためのフィルム状接着剤が使用されている（例えば、特許文献１参照）。ダイシングテープとダイシングテープ上に積層されたフィルム状接着剤とを備える接着シートを用いる場合、半導体ウェハの裏面にフィルム状接着剤を貼り付け、ダイシングによって半導体ウェハを個片化することによって、フィルム状接着剤付き半導体チップを得ることができる。得られたフィルム状接着剤付き半導体チップは、フィルム状接着剤を介して支持部材に貼り付け、熱圧着により接合することができる。 Therefore, in recent years, a film adhesive for joining a semiconductor chip and a support member has been used (see, for example, Patent Document 1). When using an adhesive sheet comprising a dicing tape and a film adhesive laminated on the dicing tape, the film adhesive is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is separated into pieces by dicing. A semiconductor chip with an adhesive can be obtained. The obtained semiconductor chip with a film adhesive can be attached to a support member via a film adhesive and bonded by thermocompression bonding.
特開２００７－０５３２４０号公報JP 2007-053240 A
　しかしながら、半導体チップのサイズが小さくなるにつれて、熱圧着時に単位面積当たりにかかる力が大きくなり、フィルム状接着剤が半導体チップからはみ出す、ブリードという現象が発生する場合がある。 However, as the size of the semiconductor chip decreases, the force per unit area during thermocompression increases, and a phenomenon called bleeding may occur in which the film adhesive protrudes from the semiconductor chip.
　また、フィルム状接着剤をワイヤ埋め込み型フィルム状接着剤であるＦＯＷ（Ｆｉｌｍ　Ｏｖｅｒ　Ｗｉｒｅ）又は半導体チップ埋め込み型フィルム状接着剤であるＦＯＤ（Ｆｉｌｍ　Ｏｖｅｒ　Ｄｉｅ）として用いる場合は、埋め込み性を向上させる観点から、熱圧着時に高い流動性が求められる。そのため、ブリードの発生頻度及び量がさらに増大する傾向にある。場合によっては、ブリードが半導体チップ上面にまで生じることがあり、これによって、電気不良又はワイヤボンディング不良につながるおそれがある。 In addition, when the film-like adhesive is used as FOW (Film Over Wire) which is a wire-embedded film-like adhesive or FOD (Film Over Die) which is a semiconductor chip-embedded film-like adhesive, a viewpoint of improving embedding property Therefore, high fluidity is required at the time of thermocompression bonding. Therefore, the frequency and amount of bleed tend to increase further. In some cases, the bleed may occur even on the upper surface of the semiconductor chip, which may lead to electrical failure or wire bonding failure.
　本発明は、このような実情に鑑みてなされたものであり、熱圧着時に良好な埋め込み性を有しつつ、ブリードを抑制することが可能なフィルム状接着剤を提供することを主な目的とする。 The present invention has been made in view of such circumstances, and has as its main object to provide a film adhesive capable of suppressing bleeding while having good embedding properties during thermocompression bonding. To do.
　本発明者らが鋭意検討したところ、接着フィルムを積層したフィルム状接着剤を用い、さらにフィルム状接着剤の溶剤含有率及びずり粘度を調整することによって、上記課題が解決されることを見出し、本発明を完成するに至った。 As a result of intensive studies by the present inventors, it was found that the above problems can be solved by adjusting the solvent content and shear viscosity of the film adhesive using a film adhesive laminated with an adhesive film, The present invention has been completed.
　本発明の一側面は、基板上に第１のワイヤを介して第１の半導体素子がワイヤボンディング接続されると共に、第１の半導体素子上に、第２の半導体素子が圧着されてなる半導体装置において、第２の半導体素子を圧着すると共に第１のワイヤの少なくとも一部を埋め込むために用いられるフィルム状接着剤であって、第１の接着フィルムと、第１の接着フィルム上に積層された第２の接着フィルムと、を備え、フィルム状接着剤の溶剤含有率がフィルム状接着剤全量を基準として１．５質量％以下であり、フィルム状接着剤の８０℃におけるずり粘度が５０００Ｐａ・ｓ以下である、フィルム状接着剤を提供する。このようなフィルム状接着剤によれば、熱圧着時に良好な埋め込み性を有しつつ、ブリードを抑制することが可能となる。 One aspect of the present invention is a semiconductor device in which a first semiconductor element is wire-bonded to a substrate via a first wire, and a second semiconductor element is pressure-bonded on the first semiconductor element. A film-like adhesive used for pressure-bonding the second semiconductor element and embedding at least a part of the first wire, the first adhesive film being laminated on the first adhesive film A second adhesive film, the solvent content of the film adhesive is 1.5% by mass or less based on the total amount of the film adhesive, and the shear viscosity at 80 ° C. of the film adhesive is 5000 Pa · s. The following film-like adhesive is provided. According to such a film adhesive, it is possible to suppress bleed while having good embedding property at the time of thermocompression bonding.
　フィルム状接着剤の厚さは、３～１５０μｍであってよい。フィルム状接着剤の８０℃における貯蔵弾性率は、１０ＭＰａ以下であってよい。 The thickness of the film adhesive may be 3 to 150 μm. The storage elastic modulus at 80 ° C. of the film adhesive may be 10 MPa or less.
　別の側面において、本発明は、上述のフィルム状接着剤の製造方法であって、溶剤を含有する第１の接着剤組成物のワニスを基材上に塗布し、塗布された第１の接着剤組成物のワニスを５０～１５０℃で加熱乾燥し、溶剤含有率が第１の接着フィルム全量を基準として１．５質量％以下である第１の接着フィルムを作製する工程と、溶剤を含有する第２の接着剤組成物のワニスを基材上に塗布し、塗布された第２の接着剤組成物のワニスを５０～１５０℃で加熱乾燥し、溶剤含有率が第２の接着フィルム全量を基準として１．５質量％以下である第２の接着フィルムを作製する工程と、第１の接着フィルムと第２の接着フィルムとを貼り合わせる工程と、を備える、フィルム状接着剤の製造方法を提供する。 In another aspect, the present invention is a method for producing the above-described film-like adhesive, wherein a varnish of a first adhesive composition containing a solvent is applied onto a substrate, and the applied first adhesive A step of producing a first adhesive film having a solvent content of 1.5% by mass or less based on the total amount of the first adhesive film, and a solvent; The varnish of the second adhesive composition to be applied is applied onto the substrate, the varnish of the applied second adhesive composition is heated and dried at 50 to 150 ° C., and the solvent content is the total amount of the second adhesive film The manufacturing method of a film adhesive provided with the process of producing the 2nd adhesive film which is 1.5 mass% or less on the basis of, and the process of bonding a 1st adhesive film and a 2nd adhesive film I will provide a.
　別の側面において、本発明は、基板上に第１のワイヤを介して第１の半導体素子がワイヤボンディング接続されると共に、第１の半導体素子上に、第２の半導体素子が上述のフィルム状接着剤を介して圧着されることで、第１のワイヤの少なくとも一部がフィルム状接着剤に埋め込まれてなる、半導体装置を提供する。なお、半導体装置は、第１のワイヤの少なくとも一部がフィルム状接着剤に埋め込まれてなるワイヤ埋込型の半導体装置であっても、第１のワイヤ及び第１の半導体チップが接着フィルムに埋め込まれてなるチップ埋込型の半導体装置であってもよい。 In another aspect, the present invention provides a first semiconductor element connected to a substrate via a first wire by wire bonding, and the second semiconductor element is formed on the first semiconductor element in the above-described film form. Provided is a semiconductor device in which at least a part of a first wire is embedded in a film adhesive by being pressure-bonded via an adhesive. Even if the semiconductor device is a wire-embedded semiconductor device in which at least a part of the first wire is embedded in a film adhesive, the first wire and the first semiconductor chip are attached to the adhesive film. An embedded chip semiconductor device may be used.
　別の側面において、本発明は、基板上に第１のワイヤを介して第１の半導体素子を電気的に接続するワイヤボンディング工程と、第２の半導体素子の片面に、上述のフィルム状接着剤を貼付するラミネート工程と、フィルム状接着剤が貼付された第２の半導体素子を、フィルム状接着剤を介して圧着することで、第１のワイヤの少なくとも一部をフィルム状接着剤に埋め込むダイボンド工程と、を備える半導体装置の製造方法を提供する。 In another aspect, the present invention provides a wire bonding step of electrically connecting a first semiconductor element to a substrate via a first wire, and the film adhesive described above on one side of the second semiconductor element. A die bonding process in which at least a part of the first wire is embedded in the film adhesive by press-bonding the second semiconductor element to which the film adhesive is applied and the second semiconductor element to which the film adhesive is applied through the film adhesive. And a method of manufacturing a semiconductor device comprising the steps.
　本発明によれば、熱圧着時に良好な埋め込み性を有しつつ、ブリードを抑制することが可能なフィルム状接着剤が提供される。また、本発明によれば、このようなフィルム状接着剤の製造方法、並びにこのようなフィルム状接着剤を用いた半導体装置及びその製造方法が提供される。 According to the present invention, there is provided a film adhesive capable of suppressing bleed while having good embedding property at the time of thermocompression bonding. Moreover, according to this invention, the manufacturing method of such a film adhesive, the semiconductor device using such a film adhesive, and its manufacturing method are provided.
一実施形態に係るフィルム状接着剤を示す模式断面図である。It is a schematic cross section which shows the film adhesive which concerns on one Embodiment. 一実施形態に係る接着シートを示す模式断面図である。It is a schematic cross section which shows the adhesive sheet which concerns on one Embodiment. 他の実施形態に係る接着シートを示す模式断面図である。It is a schematic cross section which shows the adhesive sheet which concerns on other embodiment. 一実施形態に係る半導体装置を示す模式断面図である。1 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. 一実施形態に係る半導体装置の製造方法の一連の工程を示す模式断面図である。It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. 一実施形態に係る半導体装置の製造方法の一連の工程を示す模式断面図である。It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. 一実施形態に係る半導体装置の製造方法の一連の工程を示す模式断面図である。It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. 一実施形態に係る半導体装置の製造方法の一連の工程を示す模式断面図である。It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment. 一実施形態に係る半導体装置の製造方法の一連の工程を示す模式断面図である。It is a schematic cross section which shows a series of processes of the manufacturing method of the semiconductor device which concerns on one Embodiment.
　以下、図面を適宜参照しながら、本発明の実施形態について説明する。ただし、本発明は以下の実施形態に限定されるものではない。 Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments.
　本明細書において、（メタ）アクリル酸はアクリル酸又はそれに対応するメタクリル酸を意味する。（メタ）アクリロイル基等の他の類似表現についても同様である。 In the present specification, (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other similar expressions such as a (meth) acryloyl group.
［フィルム状接着剤］
　図１は、一実施形態に係るフィルム状接着剤を示す模式断面図である。フィルム状接着剤１０は、第１の接着フィルム２と第１の接着フィルム２上に積層された第２の接着フィルム４とを備える。第１の接着フィルム２及び第２の接着フィルム４は、いずれも熱硬化性であり、半硬化（Ｂステージ）状態を経て、硬化処理後に完全硬化物（Ｃステージ）状態となり得る第１の接着剤組成物及び第２の接着剤組成物をフィルム状に成形して作製することができる。フィルム状接着剤１０は、得られた第１の接着フィルム２と第２の接着フィルム４とをラミネートすることによって作製することができる。 [Film adhesive]
FIG. 1 is a schematic cross-sectional view showing a film adhesive according to an embodiment. The film adhesive 10 includes a first adhesive film 2 and a second adhesive film 4 laminated on the first adhesive film 2. The first adhesive film 2 and the second adhesive film 4 are both thermosetting, and can undergo a semi-cured (B stage) state and a fully cured product (C stage) state after the curing process. The adhesive composition and the second adhesive composition can be formed into a film shape. The film adhesive 10 can be produced by laminating the obtained first adhesive film 2 and second adhesive film 4.
　フィルム状接着剤１０を構成する第１の接着フィルム２及び第２の接着フィルム４は、熱硬化性樹脂（以下、単に「（ａ）成分」という場合がある。）と、高分子量成分（以下、単に「（ｂ）成分」という場合がある。）と、無機フィラー（以下、単に「（ｃ）成分」という場合がある。）と、を含有することが好ましい。第１の接着フィルム２及び第２の接着フィルム４は、カップリング剤（以下、単に「（ｄ）成分」という場合がある。）と、硬化促進剤（以下、単に「（ｅ）成分」という場合がある。）と、をさらに含有していてもよい。第１の接着フィルム２及び第２の接着フィルム４は、第１の接着フィルム２及び第２の接着フィルム４を形成する際に用いられる溶剤が残存していてもよい。フィルム状接着剤１０（第１の接着フィルム２及び第２の接着フィルム４）の溶剤含有率は、フィルム状接着剤全量を基準として１．５質量％以下である。第１の接着フィルム２及び第２の接着フィルム４は互いに同一のフィルムであっても異なるフィルムであってもよいが、互いに同一のフィルムであることが好ましい。 The first adhesive film 2 and the second adhesive film 4 constituting the film adhesive 10 include a thermosetting resin (hereinafter sometimes simply referred to as “component (a)”) and a high molecular weight component (hereinafter referred to as “component (a)”). It is preferable to contain only “(b) component”) and an inorganic filler (hereinafter sometimes simply referred to as “(c) component”). The first adhesive film 2 and the second adhesive film 4 include a coupling agent (hereinafter sometimes simply referred to as “(d) component”) and a curing accelerator (hereinafter simply referred to as “(e) component”). In some cases). As for the 1st adhesive film 2 and the 2nd adhesive film 4, the solvent used when forming the 1st adhesive film 2 and the 2nd adhesive film 4 may remain | survive. The solvent content of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less based on the total amount of the film adhesive. The first adhesive film 2 and the second adhesive film 4 may be the same film or different films, but are preferably the same film.
＜（ａ）熱硬化性樹脂＞
　（ａ）成分は、接着性の観点から、エポキシ樹脂（以下、単に「（ａ１）成分」という場合がある。）及びエポキシ樹脂の硬化剤となり得るフェノール樹脂（以下、単に「（ａ２）成分」という場合がある。）を含むことが好ましい。 <(A) Thermosetting resin>
From the viewpoint of adhesiveness, the component (a) is an epoxy resin (hereinafter sometimes simply referred to as “(a1) component”) and a phenol resin that can be a curing agent for the epoxy resin (hereinafter simply referred to as “component (a2)”). In some cases).
　（ａ１）成分は、分子内にエポキシ基を有するものであれば、特に制限なく用いることができる。（ａ１）成分としては、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールＡノボラック型エポキシ樹脂、ビスフェノールＦノボラック型エポキシ樹脂、ジシクロペンタジエン骨格含有エポキシ樹脂、スチルベン型エポキシ樹脂、トリアジン骨格含有エポキシ樹脂、フルオレン骨格含有エポキシ樹脂、トリフェノールフェノールメタン型エポキシ樹脂、ビフェニル型エポキシ樹脂、キシリレン型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、多官能フェノール類、アントラセン等の多環芳香族類のジグリシジルエーテル化合物などが挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。これらの中でも、（ａ１）成分は、耐熱性の観点から、クレゾールノボラック型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、又はビスフェノールＡ型エポキシ樹脂であってもよい。 The component (a1) can be used without particular limitation as long as it has an epoxy group in the molecule. As the component (a1), for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type Epoxy resin, dicyclopentadiene skeleton-containing epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenolmethane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy Resin, naphthalene type epoxy resin, polyfunctional phenols, polycyclic aromatic diglycidyl ether compounds such as anthracene, etc.You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (a1) may be a cresol novolac type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoint of heat resistance.
　（ａ１）成分のエポキシ当量は、９０～３００ｇ／ｅｑ、１１０～２９０ｇ／ｅｑ、又は１３０～２８０ｇ／ｅｑであってよい。（ａ１）成分のエポキシ当量がこのような範囲にあると、フィルム状接着剤のバルク強度を維持しつつ、流動性を確保することができる傾向にある。 The epoxy equivalent of the component (a1) may be 90 to 300 g / eq, 110 to 290 g / eq, or 130 to 280 g / eq. When the epoxy equivalent of the component (a1) is in such a range, the fluidity tends to be ensured while maintaining the bulk strength of the film adhesive.
　（ａ１）成分の含有量は、（ａ）成分、（ｂ）成分、及び（ｃ）成分の総質量１００質量部に対して、５～５０質量部、１０～４０質量部、又は２０～３０質量部であってよい。（ａ１）成分の含有量が５質量部以上であると、フィルム状接着剤の埋め込み性がより良好となる傾向にある。（ａ１）成分の含有量が５０質量部以下であると、ブリードの発生をより抑制できる傾向にある。 The content of the component (a1) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part. When the content of the component (a1) is 5 parts by mass or more, the embedding property of the film adhesive tends to be better. It exists in the tendency which can suppress generation | occurrence | production of a bleed as content of (a1) component is 50 mass parts or less.
　（ａ２）成分は、分子内にフェノール性水酸基を有するものであれば特に制限なく用いることができる。（ａ２）成分としては、例えば、フェノール、クレゾール、レゾルシン、カテコール、ビスフェノールＡ、ビスフェノールＦ、フェニルフェノール、アミノフェノール等のフェノール類及び／又はα－ナフトール、β－ナフトール、ジヒドロキシナフタレン等のナフトール類とホルムアルデヒド等のアルデヒド基を有する化合物とを酸性触媒下で縮合又は共縮合させて得られるノボラック型フェノール樹脂、アリル化ビスフェノールＡ、アリル化ビスフェノールＦ、アリル化ナフタレンジオール、フェノールノボラック、フェノール等のフェノール類及び／又はナフトール類とジメトキシパラキシレン又はビス（メトキシメチル）ビフェニルから合成されるフェノールアラルキル樹脂、ナフトールアラルキル樹脂などが挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。これらの中でも、（ａ２）成分は、吸湿性及び耐熱性の観点から、フェノールアラルキル樹脂、ナフトールアラルキル樹脂、又はノボラック型フェノール樹脂であってもよい。 The component (a2) can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the component (a2) include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene. Phenols such as novolak-type phenolic resin, allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolak, phenol and the like obtained by condensation or cocondensation with a compound having an aldehyde group such as formaldehyde under an acidic catalyst And / or phenol aralkyl resins and naphthol aralkyl resins synthesized from naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (a2) may be a phenol aralkyl resin, a naphthol aralkyl resin, or a novolac type phenol resin from the viewpoint of hygroscopicity and heat resistance.
　（ａ２）成分の水酸基当量は、８０～２５０ｇ／ｅｑ、９０～２００ｇ／ｅｑ、又は１００～１８０ｇ／ｅｑであってよい。（ａ２）成分の水酸基当量がこのような範囲にあると、フィルム状接着剤の流動性を保ちつつ、接着力をより高く維持することができる傾向にある。 The hydroxyl equivalent of the component (a2) may be 80 to 250 g / eq, 90 to 200 g / eq, or 100 to 180 g / eq. When the hydroxyl equivalent of the component (a2) is in such a range, the adhesive strength tends to be maintained higher while maintaining the fluidity of the film adhesive.
　（ａ２）成分の軟化点は、５０～１４０℃、５５～１２０℃、又は６０～１００℃であってよい。 The softening point of the component (a2) may be 50 to 140 ° C, 55 to 120 ° C, or 60 to 100 ° C.
　（ａ２）成分の含有量は、（ａ）成分、（ｂ）成分、及び（ｃ）成分の総質量１００質量部に対して、５～５０質量部、１０～４０質量部、又は２０～３０質量部であってよい。（ａ２）成分の含有量が５質量部以上であると、より良好な硬化性が得られる傾向にある。（ａ２）成分の含有量が５０質量部以下であると、フィルム状接着剤の埋め込み性がより良好になる傾向にある。 The content of the component (a2) is 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part. When the content of the component (a2) is 5 parts by mass or more, better curability tends to be obtained. When the content of the component (a2) is 50 parts by mass or less, the embedding property of the film adhesive tends to be better.
　（ａ１）成分のエポキシ当量と（ａ２）成分の水酸基当量との比（（ａ１）成分のエポキシ当量／（ａ２）成分の水酸基当量）は、硬化性の観点から、０．３０／０．７０～０．７０／０．３０、０．３５／０．６５～０．６５／０．３５、０．４０／０．６０～０．６０／０．４０、又は０．４５／０．５５～０．５５／０．４５であってよい。当該当量比が０．３０／０．７０以上であると、より充分な硬化性が得られる傾向にある。当該当量比が０．７０／０．３０以下であると、粘度が高くなり過ぎることを防ぐことができ、より充分な流動性を得ることができる。 The ratio of the epoxy equivalent of component (a1) to the hydroxyl equivalent of component (a2) (epoxy equivalent of component (a1) / hydroxyl equivalent of component (a2)) is 0.30 / 0.70 from the viewpoint of curability. ~ 0.70 / 0.30, 0.35 / 0.65 ~ 0.65 / 0.35, 0.40 / 0.60 ~ 0.60 / 0.40, or 0.45 / 0.55 ~ It may be 0.55 / 0.45. When the equivalent ratio is 0.30 / 0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70 / 0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
＜（ｂ）高分子量成分＞
　（ｂ）成分は、ガラス転移温度（Ｔｇ）が５０℃以下であるものが好ましい。 <(B) High molecular weight component>
The component (b) preferably has a glass transition temperature (Tg) of 50 ° C. or lower.
　（ｂ）成分としては、例えば、アクリル樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂、シリコーン樹脂、ブタジエン樹脂、アクリロニトリル樹脂及びこれらの変性体等が挙げられる。 Examples of the component (b) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins, and modified products thereof.
　（ｂ）成分は、流動性の観点から、アクリル樹脂を含んでいてもよい。ここで、アクリル樹脂とは、（メタ）アクリル酸エステルに由来する構成単位を含むポリマーを意味する。アクリル樹脂は、構成単位として、エポキシ基、アルコール性又はフェノール性水酸基、カルボキシル基等の架橋性官能基を有する（メタ）アクリル酸エステルに由来する構成単位を含むポリマーであることが好ましい。また、アクリル樹脂は、（メタ）アクリル酸エステルとアクリルニトリルとの共重合体等のアクリルゴムであってもよい。 (B) The component may contain an acrylic resin from a fluid viewpoint. Here, the acrylic resin means a polymer containing a structural unit derived from a (meth) acrylic acid ester. The acrylic resin is preferably a polymer containing a structural unit derived from a (meth) acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group as a structural unit. The acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylic acid ester and acrylonitrile.
　アクリル樹脂のガラス転移温度（Ｔｇ）は、－５０～５０℃又は－３０～３０℃であってよい。アクリル樹脂のＴｇが－５０℃以上であると、接着剤組成物の柔軟性が高くなり過ぎることを防ぐことができる傾向にある。これにより、ウェハダイシング時にフィルム状接着剤を切断し易くなり、バリの発生を防ぐことが可能となる。アクリル樹脂のＴｇが５０℃以下であると、接着剤組成物の柔軟性の低下を抑えることができる傾向にある。これにより、フィルム状接着剤をウェハに貼り付ける際に、ボイドを充分に埋め込み易くなる傾向にある。また、ウェハの密着性の低下によるダイシング時のチッピングを防ぐことが可能となる。ここで、ガラス転移温度（Ｔｇ）は、ＤＳＣ（熱示差走査熱量計）（例えば、株式会社リガク製「Ｔｈｅｒｍｏ　Ｐｌｕｓ　２」）を用いて測定した値を意味する。 The glass transition temperature (Tg) of the acrylic resin may be −50 to 50 ° C. or −30 to 30 ° C. If the Tg of the acrylic resin is −50 ° C. or higher, the flexibility of the adhesive composition tends to be prevented from becoming too high. Thereby, it becomes easy to cut | disconnect a film adhesive at the time of wafer dicing, and it becomes possible to prevent generation | occurrence | production of a burr | flash. It exists in the tendency which can suppress the fall of the softness | flexibility of adhesive composition as Tg of acrylic resin is 50 degrees C or less. Thereby, when sticking a film adhesive on a wafer, it exists in the tendency for a void to be embedded easily. Further, chipping during dicing due to a decrease in wafer adhesion can be prevented. Here, the glass transition temperature (Tg) means a value measured using a DSC (thermal differential scanning calorimeter) (for example, “Thermo Plus 2” manufactured by Rigaku Corporation).
　アクリル樹脂の重量平均分子量（Ｍｗ）は、１０万～３００万又は５０万～２００万であってよい。アクリル樹脂のＭｗがこのような範囲にあると、フィルム形成性、フィルム状における強度、可撓性、タック性等を適切に制御することができると共に、リフロー性に優れ、埋め込み性を向上することができる。ここで、Ｍｗは、ゲルパーミエーションクロマトグラフィー（ＧＰＣ）で測定し、標準ポリスチレンによる検量線を用いて換算した値を意味する。 The weight average molecular weight (Mw) of the acrylic resin may be 100,000 to 3 million or 500,000 to 2 million. When the Mw of the acrylic resin is in such a range, the film formability, strength in film form, flexibility, tackiness, etc. can be appropriately controlled, and the reflow property is excellent and the embedding property is improved. Can do. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a standard polystyrene calibration curve.
　アクリル樹脂の市販品としては、例えば、ＳＧ－７０Ｌ、ＳＧ－７０８－６、ＷＳ－０２３　ＥＫ３０、ＳＧ－２８０　ＥＫ２３、ＨＴＲ－８６０Ｐ－３ＣＳＰ、ＨＴＲ－８６０Ｐ－３ＣＳＰ－３ＤＢ（いずれもナガセケムテックス株式会社製）が挙げられる。 Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3CSP, HTR-860P-3CSP-3DB (all Nagase ChemteX Corporation) Company-made).
　（ｂ）成分の含有量は、（ａ）成分、（ｂ）成分、及び（ｃ）成分の総質量１００質量部に対して、５～７０質量部、１０～５０質量部、又は１５～３０質量部であってよい。（ｂ）成分の含有量が５質量部以上であると、成形時の流動性の制御及び高温での取り扱い性をより一層良好にすることができる。（ｂ）成分の含有量が７０質量部以下であると、埋め込み性をより一層良好にすることができる。 The content of the component (b) is 5 to 70 parts by mass, 10 to 50 parts by mass, or 15 to 30 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part. When the content of the component (b) is 5 parts by mass or more, it is possible to further improve the control of fluidity during molding and the handleability at high temperatures. When the content of component (b) is 70 parts by mass or less, the embedding property can be further improved.
＜（ｃ）無機フィラー＞
　（ｃ）成分としては、例えば、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ホウ酸アルミウィスカ、窒化ホウ素、シリカ等が挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。これらの中でも、（ｃ）成分は、樹脂との相溶性の観点から、シリカであってもよい。 <(C) Inorganic filler>
As the component (c), for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, Examples thereof include boron nitride and silica. You may use these individually by 1 type or in combination of 2 or more types. Among these, the component (c) may be silica from the viewpoint of compatibility with the resin.
　（ｃ）成分の平均粒径は、接着性の向上の観点から、０．００５～１μｍ又は０．０５～０．５μｍであってよい。ここで、平均粒径は、ＢＥＴ比表面積から換算することによって求められる値を意味する。 The average particle diameter of the component (c) may be 0.005 to 1 μm or 0.05 to 0.5 μm from the viewpoint of improving adhesiveness. Here, an average particle diameter means the value calculated | required by converting from a BET specific surface area.
　（ｃ）成分の含有量は、（ａ）成分、（ｂ）成分、及び（ｃ）成分の総質量１００質量部に対して、５～５０質量部、１５～４５質量部、又は２５～４０質量部であってよい。（ｃ）成分の含有量が５質量部以上であると、フィルム状接着剤の流動性がより向上する傾向にある。（ｃ）成分の含有量が５０質量部以下であると、フィルム状接着剤のダイシング性がより良好となる傾向にある。 The content of the component (c) is 5 to 50 parts by mass, 15 to 45 parts by mass, or 25 to 40 with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). It may be a mass part. When the content of the component (c) is 5 parts by mass or more, the fluidity of the film adhesive tends to be further improved. When the content of the component (c) is 50 parts by mass or less, the dicing property of the film adhesive tends to be better.
＜（ｄ）カップリング剤＞
　（ｄ）成分は、シランカップリング剤であってよい。シランカップリング剤としては、例えば、γ－ウレイドプロピルトリエトキシシラン、γ－メルカプトプロピルトリメトキシシラン、３－フェニルアミノプロピルトリメトキシシラン、３－（２－アミノエチル）アミノプロピルトリメトキシシラン等が挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。 <(D) Coupling agent>
The component (d) may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, and the like. It is done. You may use these individually by 1 type or in combination of 2 or more types.
　（ｄ）成分の含有量は、（ａ）成分、（ｂ）成分、及び（ｃ）成分の総質量１００質量部に対して、０．０１～５質量部であってよい。 The content of the component (d) may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total mass of the components (a), (b), and (c).
＜（ｅ）硬化促進剤＞
　（ｅ）成分は、特に限定されず、一般に使用されるものを用いることができる。（ｅ）成分としては、例えば、イミダゾール類及びその誘導体、有機リン系化合物、第二級アミン類、第三級アミン類、第四級アンモニウム塩等が挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。これらの中でも、反応性の観点から（ｅ）成分はイミダゾール類及びその誘導体であってもよい。 <(E) Curing accelerator>
(E) A component is not specifically limited, What is generally used can be used. Examples of the component (e) include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. You may use these individually by 1 type or in combination of 2 or more types. Among these, from the viewpoint of reactivity, the component (e) may be imidazoles and derivatives thereof.
　イミダゾール類としては、例えば、２－メチルイミダゾール、１－ベンジル－２－メチルイミダゾール、１－シアノエチル－２－フェニルイミダゾール、１－シアノエチル－２－メチルイミダゾール等が挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。 Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. You may use these individually by 1 type or in combination of 2 or more types.
　（ｅ）成分の含有量は、（ａ）成分、（ｂ）成分、及び（ｃ）成分の総質量１００質量部に対して、０．０１～１質量部であってよい。 The content of the component (e) may be 0.01 to 1 part by mass with respect to 100 parts by mass of the total mass of the component (a), the component (b), and the component (c).
＜溶剤＞
　第１の接着フィルム２及び第２の接着フィルム４は、後述の第１の接着フィルム２及び第２の接着フィルム４を形成する際に用いられる溶剤が残存していてもよい。溶剤は、各成分を均一に溶解、混練または分散できるものであれば制限はなく、従来公知のものを使用することができる。このような溶剤としては、例えば、アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン等のケトン系溶媒、ジメチルホルムアミド、ジメチルアセトアミド、Ｎメチルピロリドン、トルエン、キシレン等が挙げられる。乾燥速度が速く、価格が安い点でメチルエチルケトン、シクロヘキサノン等を使用することが好ましい。 <Solvent>
As for the 1st adhesive film 2 and the 2nd adhesive film 4, the solvent used when forming the below-mentioned 1st adhesive film 2 and the 2nd adhesive film 4 may remain | survive. The solvent is not particularly limited as long as each component can be uniformly dissolved, kneaded or dispersed, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
　フィルム状接着剤１０（第１の接着フィルム２及び第２の接着フィルム４）の溶剤含有率は、フィルム状接着剤全量を基準として１．５質量％以下である。溶剤含有率は、１．２質量％以下、０．９質量％以下、又は０．６量％以下であってもよい。溶剤含有率は１．５質量％以下であると、ブリードを抑制できる傾向にある。溶剤含有率の下限値は、特に制限されないが、例えば、０．０１質量％以上であってよい。 The solvent content of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less based on the total amount of the film adhesive. The solvent content may be 1.2 mass% or less, 0.9 mass% or less, or 0.6 mass% or less. When the solvent content is 1.5% by mass or less, bleeding tends to be suppressed. The lower limit of the solvent content is not particularly limited, but may be, for example, 0.01% by mass or more.
　接着フィルムは、その厚さを薄くすることによって、溶剤を加熱乾燥し易くなり、溶剤含有率が低減される傾向にある。そのため、フィルム状接着剤１０のように、第１の接着フィルム２及び第２の接着フィルム４を備えるものは、単層で構成される同じ厚さのものに比べて、加熱乾燥条件を高くすることなく、溶剤含有率を低減し易くなる。また、フィルム状接着剤１０の溶剤含有率は、例えば、接着剤組成物のワニスの加熱乾燥の条件を変化させることによって、調整することができる。 By reducing the thickness of the adhesive film, it becomes easier to heat and dry the solvent, and the solvent content tends to be reduced. Therefore, the thing provided with the 1st adhesive film 2 and the 2nd adhesive film 4 like the film adhesive 10 makes heating-drying conditions high compared with the thing of the same thickness comprised by a single layer. It becomes easy to reduce a solvent content rate. Moreover, the solvent content rate of the film adhesive 10 can be adjusted by changing the conditions of the heat drying of the varnish of an adhesive composition, for example.
　第１の接着フィルム２及び第２の接着フィルム４は、その他の成分をさらに含有していてもよい。その他の成分としては、例えば、イオントラップ剤、レオロジーコントロール剤等が挙げられる。その他の成分の含有量は、（ａ）成分、（ｂ）成分、及び（ｃ）成分の総質量１００質量部に対して、０．０１～２０質量部であってよい。 The first adhesive film 2 and the second adhesive film 4 may further contain other components. Examples of other components include an ion trap agent and a rheology control agent. The content of the other components may be 0.01 to 20 parts by mass with respect to 100 parts by mass as the total mass of the components (a), (b), and (c).
　フィルム状接着剤１０（第１の接着フィルム２及び第２の接着フィルム４）の８０℃におけるずり粘度は５０００Ｐａ・ｓ以下である。８０℃におけるずり粘度は、３５００Ｐａ・ｓ以下、２５００Ｐａ・ｓ以下、又は１５００Ｐａ・ｓ以下であってよい。８０℃におけるずり粘度は５０００Ｐａ・ｓ以下であると、流動性が高まり、埋め込み性が向上する傾向にある。８０℃におけるずり粘度の下限値は、特に制限されないが、例えば、１０Ｐａ・ｓ以上であってよい。なお、８０℃におけるずり粘度は、例えば、実施例に記載の方法によって測定することができる。 The shear viscosity at 80 ° C. of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 5000 Pa · s or less. The shear viscosity at 80 ° C. may be 3500 Pa · s or less, 2500 Pa · s or less, or 1500 Pa · s or less. When the shear viscosity at 80 ° C. is 5000 Pa · s or less, the fluidity is increased and the embedding property tends to be improved. The lower limit of the shear viscosity at 80 ° C. is not particularly limited, but may be, for example, 10 Pa · s or more. In addition, the shear viscosity in 80 degreeC can be measured by the method as described in an Example, for example.
　フィルム状接着剤１０の８０℃におけるずり粘度は、例えば、上述の（ｂ）成分及び（ｃ）成分の含有量に依存する傾向にあり、これらを変化させることによって、調整することができる。 The shear viscosity at 80 ° C. of the film adhesive 10 tends to depend on, for example, the contents of the above-described component (b) and component (c), and can be adjusted by changing these.
　フィルム状接着剤１０（第１の接着フィルム２及び第２の接着フィルム４）の８０℃における貯蔵弾性率は１０ＭＰａ以下であってよい。８０℃における貯蔵弾性率は、５ＭＰａ以下、１ＭＰａ以下、又は０．５ＭＰａ以下であってもよい。８０℃における貯蔵弾性率は１０ＭＰａ以下であると、埋め込み性により優れる傾向にある。８０℃における貯蔵弾性率の下限値は、特に制限されないが、例えば、０．０２ＭＰａ以上であってよい。 The storage elastic modulus at 80 ° C. of the film adhesive 10 (the first adhesive film 2 and the second adhesive film 4) may be 10 MPa or less. The storage elastic modulus at 80 ° C. may be 5 MPa or less, 1 MPa or less, or 0.5 MPa or less. When the storage elastic modulus at 80 ° C. is 10 MPa or less, the embedding property tends to be excellent. The lower limit value of the storage elastic modulus at 80 ° C. is not particularly limited, but may be, for example, 0.02 MPa or more.
　フィルム状接着剤１０の８０℃における貯蔵弾性率は、例えば、（ａ）成分の官能基当量を変化させることによって調整することができる。 The storage elastic modulus at 80 ° C. of the film adhesive 10 can be adjusted, for example, by changing the functional group equivalent of the component (a).
　第１の接着フィルム２の厚さ及び第２の接着フィルム４の厚さは、互いに同一であっても異なっていてもよいが、互いに同一であることが好ましい。第１の接着フィルム２の厚さ及び第２の接着フィルム４の厚さは、それぞれ２～１４０μｍであってよい。第１の接着フィルム２の厚さ及び第２の接着フィルム４の厚さは、それぞれ５～１１０μｍ、１０～９０μｍ、又は２０～６０μｍであってよい。これらの厚さがそれぞれ２μｍ以上であると、埋め込み性がより良好となる傾向にある。これらの厚さがそれぞれ１４０μｍ以下であると、溶剤含有率をより低くすることができる傾向にある。 The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be the same or different from each other, but are preferably the same. The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 2 to 140 μm, respectively. The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 5 to 110 μm, 10 to 90 μm, or 20 to 60 μm, respectively. When these thicknesses are each 2 μm or more, the embedding property tends to be better. When these thicknesses are each 140 μm or less, the solvent content tends to be further reduced.
　フィルム状接着剤１０の厚さ（第１の接着フィルム２と第２の接着フィルム４との合計の厚さ）は、第１のワイヤ及び第１の半導体素子、並びに基板の配線回路等の凹凸を十分に充填可能とするため、３～１５０μｍであってよい。フィルム状接着剤１０の厚さは、２０～１４０ｍ又は４０～１３０μｍであってもよい。フィルム状接着剤１０の厚さが３μｍ以上であると、埋め込み性により優れる傾向にある。フィルム状接着剤１０の厚さが１５０μｍ以下であると、ブリードをより抑制できる傾向にある。 The thickness of the film adhesive 10 (the total thickness of the first adhesive film 2 and the second adhesive film 4) is unevenness such as the first wire and the first semiconductor element, and the wiring circuit of the substrate. May be 3 to 150 μm in order to allow sufficient filling. The thickness of the film adhesive 10 may be 20 to 140 m or 40 to 130 μm. When the thickness of the film adhesive 10 is 3 μm or more, the embedding property tends to be excellent. When the thickness of the film adhesive 10 is 150 μm or less, bleeding tends to be further suppressed.
　フィルム状接着剤１０は、第１の接着フィルム２及び第２の接着フィルム４に、さらに接着フィルムが積層されていてもよい。すなわち、フィルム状接着剤１０は、３層以上の接着フィルムを備えていてもよい。第１の接着フィルム２及び第２の接着フィルム４以外の接着フィルムは、第１の接着フィルム２及び第２の接着フィルム４と同一のものであってよい。 The film adhesive 10 may be further laminated with an adhesive film on the first adhesive film 2 and the second adhesive film 4. That is, the film adhesive 10 may include an adhesive film having three or more layers. The adhesive film other than the first adhesive film 2 and the second adhesive film 4 may be the same as the first adhesive film 2 and the second adhesive film 4.
［フィルム状接着剤の製造方法］
　フィルム状接着剤の製造方法は、溶剤を含有する第１の接着剤組成物のワニスを基材上に塗布し、塗布された第１の接着剤組成物のワニスを５０～１５０℃で加熱乾燥し、溶剤含有率が第１の接着フィルム全量を基準として１．５質量％以下である第１の接着フィルムを作製する工程と、溶剤を含有する第２の接着剤組成物のワニスを基材上に塗布し、塗布された第２の接着剤組成物のワニスを５０～１５０℃で加熱乾燥し、溶剤含有率が第２の接着フィルム全量を基準として１．５質量％以下である第２の接着フィルムを作製する工程と、第１の接着フィルムと第２の接着フィルムとを貼り合わせる工程と、を備える。 [Method for producing film adhesive]
A method for producing a film-like adhesive is that a varnish of a first adhesive composition containing a solvent is applied onto a substrate, and the varnish of the applied first adhesive composition is dried by heating at 50 to 150 ° C. And a step of producing a first adhesive film having a solvent content of 1.5% by mass or less based on the total amount of the first adhesive film, and a varnish of the second adhesive composition containing the solvent as a base material A second varnish of the applied second adhesive composition is dried by heating at 50 to 150 ° C., and the solvent content is 1.5% by mass or less based on the total amount of the second adhesive film. The process of producing this adhesive film and the process of bonding a 1st adhesive film and a 2nd adhesive film are provided.
　第１の接着剤組成物のワニス及び第２の接着剤組成物のワニスは、例えば、（ａ）～（ｅ）成分、必要に応じて（ｄ）成分及び（ｅ）成分を、溶剤中で混合、混練することによって調製することができる。 The varnish of the first adhesive composition and the varnish of the second adhesive composition are, for example, the components (a) to (e) and, if necessary, the components (d) and (e) in a solvent. It can be prepared by mixing and kneading.
　混合、混練は、通常の撹拌機、らいかい機、三本ロール、ボールミル等の分散機を用い、これらを適宜組み合わせて行うことができる。 Mixing and kneading can be performed by using a normal stirrer, a raking machine, a three-roller, a ball mill, or other disperser and appropriately combining them.
　第１の接着剤組成物のワニス及び第２の接着剤組成物のワニスを作製するための溶剤は、上記各成分を均一に溶解、混練または分散できるものであれば制限はなく、従来公知のものを使用することができる。このような溶剤としては、例えば、アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン等のケトン系溶媒、ジメチルホルムアミド、ジメチルアセトアミド、Ｎメチルピロリドン、トルエン、キシレン等が挙げられる。乾燥速度が速く、価格が安い点でメチルエチルケトン、シクロヘキサノン等を使用することが好ましい。 The solvent for preparing the varnish of the first adhesive composition and the varnish of the second adhesive composition is not particularly limited as long as it can uniformly dissolve, knead or disperse the above components, and is conventionally known. Things can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N methylpyrrolidone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.
　基材フィルムとしては、特に制限はなく、例えば、ポリエステルフィルム、ポリプロピレンフィルム（ＯＰＰフィルム等）、ポリエチレンテレフタレートフィルム、ポリイミドフィルム、ポリエーテルイミドフィルム、ポリエーテルナフタレートフィルム、メチルペンテンフィルム等が挙げられる。 There is no restriction | limiting in particular as a base film, For example, a polyester film, a polypropylene film (OPP film etc.), a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, a methylpentene film etc. are mentioned.
　第１の接着剤組成物のワニス及び第２の接着剤組成物のワニスを基材フィルムに塗布する方法としては、公知の方法を用いることができ、例えば、ナイフコート法、ロールコート法、スプレーコート法、グラビアコート法、バーコート法、カーテンコート法等が挙げられる。加熱乾燥の条件は、使用した溶剤が充分に揮散する条件であれば特に制限はないが、例えば、５０～１５０℃で、１～３０分間加熱して行うことができる。加熱乾燥は、５０～１５０℃の範囲内の温度で段階的に昇温させて行ってもよい。加熱温度を５０℃以上とすることによって、第１の接着フィルム２及び第２の接着フィルム４（フィルム状接着剤１０）の溶剤含有率をフィルム状接着剤全量基準で１．５質量％以下とし易くなる傾向にある。一方、加熱温度を１５０℃以下とすることによって、接着剤組成物の硬化が進むことを抑制できる傾向にある。 As a method for applying the varnish of the first adhesive composition and the varnish of the second adhesive composition to the base film, known methods can be used, for example, a knife coating method, a roll coating method, a spraying method. Examples thereof include a coating method, a gravure coating method, a bar coating method, and a curtain coating method. The drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized. For example, the drying can be performed by heating at 50 to 150 ° C. for 1 to 30 minutes. The heat drying may be performed by raising the temperature stepwise at a temperature within the range of 50 to 150 ° C. By setting the heating temperature to 50 ° C. or higher, the solvent content of the first adhesive film 2 and the second adhesive film 4 (film adhesive 10) is 1.5% by mass or less based on the total amount of the film adhesive. It tends to be easier. On the other hand, when the heating temperature is set to 150 ° C. or lower, the curing of the adhesive composition tends to be suppressed.
　フィルム状接着剤１０は、第１の接着フィルム２と第２の接着フィルム４とをロールラミネーター、真空ラミネーター等を用いて所定条件（例えば、室温（２０℃）、又は加熱状態）で貼り合わせることによって作製することができる。 The film adhesive 10 bonds the first adhesive film 2 and the second adhesive film 4 under a predetermined condition (for example, room temperature (20 ° C.) or heated state) using a roll laminator, a vacuum laminator, or the like. Can be produced.
　フィルム状接着剤１０は、まず、第１の接着剤組成物のワニスを基材フィルムに塗布し、溶剤を加熱乾燥して除去して第１の接着フィルム２を作製し、次いで、第１の接着フィルム２上に、第２の接着剤組成物のワニスを塗布し、溶剤を加熱乾燥して除去して第２の接着フィルムを形成することによっても作製することができる。 The film adhesive 10 firstly applies the varnish of the first adhesive composition to the base film, removes the solvent by heating and drying to produce the first adhesive film 2, and then the first adhesive It can also be produced by applying a varnish of the second adhesive composition on the adhesive film 2 and removing the solvent by drying by heating to form a second adhesive film.
［接着シート］
　図２は、一実施形態に係る接着シートを示す模式断面図である。接着シート１００は、基材フィルム２０と基材フィルム２０上に設けられた第１の接着フィルム２及び第２の接着フィルム４からなるフィルム状接着剤１０とを備える。 [Adhesive sheet]
FIG. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment. The adhesive sheet 100 includes a base film 20 and a film adhesive 10 made of the first adhesive film 2 and the second adhesive film 4 provided on the base film 20.
　基材フィルム２０は、ダイシングテープであってもよい。このような接着シートは、ダイシングダイボンディング一体型接着シートとして使用することができる。この場合、半導体ウェハへのラミネート工程が１回となることから、作業の効率化が可能である。 The base film 20 may be a dicing tape. Such an adhesive sheet can be used as a dicing die bonding integrated adhesive sheet. In this case, since the lamination process to the semiconductor wafer is performed once, the work efficiency can be improved.
　ダイシングテープとしては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルム等のプラスチックフィルム等が挙げられる。また、ダイシングテープは、必要に応じて、プライマー塗布、ＵＶ処理、コロナ放電処理、研磨処理、エッチング処理等の表面処理が行われていてもよい。ダイシングテープは、粘着性を有するものであることが好ましい。このようなダイシングテープは、上述のプラスチックフィルムに粘着性を付与したものであってもよく、上述のプラスチックフィルムの片面に粘着剤層を設けたものであってもよい。 Examples of the dicing tape include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. In addition, the dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as necessary. The dicing tape is preferably one having adhesiveness. Such a dicing tape may be one obtained by imparting adhesiveness to the above-mentioned plastic film, or may be one obtained by providing an adhesive layer on one side of the above-mentioned plastic film.
　接着シート１００は、まず、第１の接着剤組成物のワニスを調製し、これを基材フィルムに塗布し、溶剤を加熱乾燥して除去することによって第１の接着フィルム２を作製する。次いで、別途、第２の接着剤組成物のワニスから第２の接着フィルム４を作製し、これを第１の接着フィルム２にラミネートすることによって作製することができる。 The adhesive sheet 100 first prepares the first adhesive film 2 by preparing a varnish of the first adhesive composition, applying it to the base film, and removing the solvent by heating and drying. Then, separately, the second adhesive film 4 can be produced from the varnish of the second adhesive composition and can be produced by laminating the second adhesive film 4 on the first adhesive film 2.
　図３は、他の実施形態に係る接着シートを示す模式断面図である。接着シート１１０は、フィルム状接着剤１０の基材フィルム２０とは反対側の面（第２の接着フィルム４側の面）に積層された保護フィルム３０をさらに備える。保護フィルム３０は、上述の基材フィルム２０と同様のものであってよい。保護フィルムの厚さは、例えば、６０～２００μｍ又は７０～１７０μｍであってよい。 FIG. 3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment. The adhesive sheet 110 further includes a protective film 30 laminated on the surface of the film adhesive 10 opposite to the base film 20 (surface on the second adhesive film 4 side). The protective film 30 may be the same as the base film 20 described above. The thickness of the protective film may be, for example, 60 to 200 μm or 70 to 170 μm.
［半導体装置］
　図４は、一実施形態に係る半導体装置を示す模式断面図である。半導体装置２００は、基板１４に、第１のワイヤ８８を介して１段目の第１の半導体素子Ｗａがワイヤボンディング接続されると共に、第１の半導体素子Ｗａ上に、第２の半導体素子Ｗａａがフィルム状接着剤１０を介して圧着されることで、第１のワイヤ８８の少なくとも一部がフィルム状接着剤１０に埋め込まれてなる半導体装置である。半導体装置は、第１のワイヤ８８の少なくとも一部が埋め込まれてなるワイヤ埋め込み型の半導体装置であっても、第１のワイヤ８８及び第１の半導体素子Ｗａが埋め込まれてなる半導体装置であってもよい。また、半導体装置２００では、基板１４と第２の半導体素子Ｗａａとがさらに第２のワイヤ９８を介して電気的に接続されると共に、第２の半導体素子Ｗａａが封止材４２により封止されている。 [Semiconductor device]
FIG. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. In the semiconductor device 200, the first semiconductor element Wa in the first stage is wire-bonded to the substrate 14 via the first wire 88, and the second semiconductor element Waa is formed on the first semiconductor element Wa. Is a semiconductor device in which at least a part of the first wire 88 is embedded in the film adhesive 10 by being pressure-bonded via the film adhesive 10. The semiconductor device is a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded even if the semiconductor device is a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded. May be. In the semiconductor device 200, the substrate 14 and the second semiconductor element Waa are further electrically connected via the second wire 98, and the second semiconductor element Waa is sealed with the sealing material 42. ing.
　第１の半導体素子Ｗａの厚さは、１０～１７０μｍであってよく、第２の半導体素子Ｗａａの厚さは、２０～４００μｍであってよい。フィルム状接着剤１０内部に埋め込まれている第１の半導体素子Ｗａは、半導体装置２００を駆動するためのコントローラチップである。 The thickness of the first semiconductor element Wa may be 10 to 170 μm, and the thickness of the second semiconductor element Waa may be 20 to 400 μm. The first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200.
　基板１４は、表面に回路パターン８４、９４がそれぞれ二箇所ずつ形成された有機基板９０からなる。第１の半導体素子Ｗａは、回路パターン９４上に接着剤４１を介して圧着されている。第２の半導体素子Ｗａａは、第１の半導体素子Ｗａが圧着されていない回路パターン９４、第１の半導体素子Ｗａ、及び回路パターン８４の一部が覆われるようにフィルム状接着剤１０を介して基板１４に圧着されている。基板１４上の回路パターン８４、９４に起因する凹凸の段差には、フィルム状接着剤１０が埋め込まれている。そして、樹脂製の封止材４２により、第２の半導体素子Ｗａａ、回路パターン８４及び第２のワイヤ９８が封止されている。 The substrate 14 is composed of an organic substrate 90 having two circuit patterns 84 and 94 formed on the surface thereof. The first semiconductor element Wa is pressure-bonded onto the circuit pattern 94 via an adhesive 41. The second semiconductor element Waa is interposed via the film adhesive 10 so that the circuit pattern 94, the first semiconductor element Wa, and the circuit pattern 84 to which the first semiconductor element Wa is not bonded are covered. Crimped to the substrate 14. A film adhesive 10 is embedded in the uneven steps due to the circuit patterns 84 and 94 on the substrate 14. The second semiconductor element Waa, the circuit pattern 84, and the second wire 98 are sealed with a resin sealing material 42.
［半導体装置の製造方法］
　本実施形態に係る半導体装置の製造方法は、基板上に第１のワイヤを介して第１の半導体素子を電気的に接続する第１のワイヤボンディング工程と、第２の半導体素子の片面に、上述のフィルム状接着剤を貼付するラミネート工程と、フィルム状接着剤が貼付された第２の半導体素子を、フィルム状接着剤を介して圧着することで、第１のワイヤの少なくとも一部をフィルム状接着剤に埋め込むダイボンド工程と、を備える。 [Method for Manufacturing Semiconductor Device]
In the method for manufacturing a semiconductor device according to the present embodiment, a first wire bonding step of electrically connecting a first semiconductor element on a substrate via a first wire, and a second surface of the second semiconductor element, At least a part of the first wire is film-formed by pressure-bonding the above-described laminating step for attaching the film adhesive and the second semiconductor element to which the film adhesive is attached via the film adhesive. A die-bonding step embedded in the adhesive.
　図５～９は、一実施形態に係る半導体装置の製造方法の一連の工程を示す模式断面図である。本実施形態に係る半導体装置２００は、第１のワイヤ８８及び第１の半導体素子Ｗａが埋め込まれてなる半導体装置であり、以下の手順により製造される。まず、図５に示すとおり、基板１４上の回路パターン９４上に、接着剤４１を有する第１の半導体素子Ｗａを圧着し、第１のワイヤ８８を介して基板１４上の回路パターン８４と第１の半導体素子Ｗａとを電気的にボンディング接続する（第１のワイヤボンディング工程）。 5 to 9 are schematic cross-sectional views showing a series of steps of a method for manufacturing a semiconductor device according to an embodiment. The semiconductor device 200 according to this embodiment is a semiconductor device in which a first wire 88 and a first semiconductor element Wa are embedded, and is manufactured by the following procedure. First, as shown in FIG. 5, the first semiconductor element Wa having the adhesive 41 is crimped onto the circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 and the first pattern are connected to each other via the first wire 88. The first semiconductor element Wa is electrically bonded and connected (first wire bonding step).
　次に、半導体ウェハ（例えば、厚さ：５０μｍ、サイズ：８インチ）の片面に、接着シート１００をラミネートし、基材フィルム２０を剥がすことによって、半導体ウェハの片面にフィルム状接着剤１０（例えば、厚さ：１３５μｍ）を貼り付ける。そして、フィルム状接着剤１０にダイシングテープを貼り合わせた後、所定の大きさ（例えば、７．５ｍｍ角）にダイシングすることにより、図６に示すとおり、フィルム状接着剤１０が貼付した第２の半導体素子Ｗａａを得る（ラミネート工程）。 Next, the adhesive sheet 100 is laminated on one side of a semiconductor wafer (for example, thickness: 50 μm, size: 8 inches), and the base film 20 is peeled off, whereby the film adhesive 10 (for example, on one side of the semiconductor wafer). , Thickness: 135 μm). Then, after the dicing tape is bonded to the film adhesive 10, the dicing tape is diced to a predetermined size (for example, 7.5 mm square), whereby the second film adhesive 10 is applied as shown in FIG. The semiconductor element Waa is obtained (laminating step).
　ラミネート工程の温度条件は、５０～１００℃又は６０～８０℃であってよい。ラミネート工程の温度が５０℃以上であると、半導体ウェハと良好な密着性を得ることができる。ラミネート工程の温度が１００℃以下であると、ラミネート工程中にフィルム状接着剤１０が過度に流動することが抑えられるため、厚さの変化等を引き起こすことを防止できる。 The temperature condition of the laminating process may be 50-100 ° C or 60-80 ° C. When the temperature in the laminating step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained. When the temperature of the laminating process is 100 ° C. or lower, the film-like adhesive 10 can be prevented from flowing excessively during the laminating process, so that it is possible to prevent a change in thickness and the like.
　ダイシング方法としては、例えば、回転刃を用いるブレードダイシング、レーザーによってフィルム状接着剤又はウェハとフィルム状接着剤の両方を切断する方法等が挙げられる。 Examples of the dicing method include blade dicing using a rotary blade, and a method of cutting a film adhesive or both a wafer and a film adhesive with a laser.
　そして、フィルム状接着剤１０が貼付した第２の半導体素子Ｗａａを、第１の半導体素子Ｗａが第１のワイヤ８８を介してボンディング接続された基板１４に圧着する。具体的には、図７に示すとおり、フィルム状接着剤１０が貼付された第２の半導体素子Ｗａａを、フィルム状接着剤１０によって第１のワイヤ８８及び第１の半導体素子Ｗａが覆われるように載置し、次いで、図８に示すとおり、第２の半導体素子Ｗａａを基板１４に圧着させることで基板１４に第２の半導体素子Ｗａａを固定する（ダイボンド工程）。ダイボンド工程は、フィルム状接着剤１０を８０～１８０℃、０．０１～０．５０ＭＰａの条件で０．５～３．０秒間圧着することが好ましい。ダイボンド工程の後、フィルム状接着剤１０を６０～１７５℃、０．３～０．７ＭＰａの条件で、５分間以上加圧及び加熱する。 Then, the second semiconductor element Waa to which the film adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is bonded via the first wire 88. Specifically, as shown in FIG. 7, the first wire 88 and the first semiconductor element Wa are covered with the second semiconductor element Waa to which the film-like adhesive 10 is attached by the film-like adhesive 10. Next, as shown in FIG. 8, the second semiconductor element Waa is fixed to the substrate 14 by pressing the second semiconductor element Waa to the substrate 14 (die bonding step). In the die bonding step, the film adhesive 10 is preferably pressure-bonded for 0.5 to 3.0 seconds under conditions of 80 to 180 ° C. and 0.01 to 0.50 MPa. After the die bonding step, the film adhesive 10 is pressed and heated for 5 minutes or more under the conditions of 60 to 175 ° C. and 0.3 to 0.7 MPa.
　次いで、図９に示すとおり、基板１４と第２の半導体素子Ｗａａとを第２のワイヤ９８を介して電気的に接続した後（第２のワイヤボンディング工程）、回路パターン８４、第２のワイヤ９８及び第２の半導体素子Ｗａａを封止材４２で封止する。このような工程を経ることで半導体装置２００を製造することができる。 Next, as shown in FIG. 9, after electrically connecting the substrate 14 and the second semiconductor element Waa via the second wire 98 (second wire bonding step), the circuit pattern 84, the second wire 98 and the second semiconductor element Waa are sealed with a sealing material 42. The semiconductor device 200 can be manufactured through such steps.
　他の実施形態として、半導体装置は、第１のワイヤ８８の少なくとも一部が埋め込まれてなるワイヤ埋め込み型の半導体装置であってもよい。 As another embodiment, the semiconductor device may be a wire embedded type semiconductor device in which at least a part of the first wire 88 is embedded.
　以下、本発明について実施例を挙げてより具体的に説明する。ただし、本発明はこれら実施例に限定されるものではない。 Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.
＜接着剤組成物のワニスの調製＞
（合成例１～３）
　表１に示す品名及び組成比（単位：質量部）で、（ａ）熱硬化性樹脂としてのエポキシ樹脂及びフェノール樹脂、並びに（ｃ）無機フィラーからなる組成物にシクロヘキサノンを加え、撹拌混合した。これに、表１に示す（ｂ）高分子量成分としてのアクリルゴムを加えて撹拌し、さらに表１に示す（ｄ）カップリング剤及び（ｅ）硬化促進剤を加えて各成分が均一になるまで撹拌して合成例１～３の接着剤組成物のワニスを調製した。 <Preparation of varnish of adhesive composition>
(Synthesis Examples 1 to 3)
With the product names and composition ratios (unit: parts by mass) shown in Table 1, cyclohexanone was added to a composition comprising (a) an epoxy resin and a phenol resin as thermosetting resins, and (c) an inorganic filler, followed by stirring and mixing. To this, (b) acrylic rubber as a high molecular weight component shown in Table 1 is added and stirred, and (d) a coupling agent and (e) a curing accelerator shown in Table 1 are added to make each component uniform. The adhesive composition varnishes of Synthesis Examples 1 to 3 were prepared.
　なお、表１中の各成分の記号は下記のものを意味する。 In addition, the symbol of each component in Table 1 means the following.
（エポキシ樹脂）
　ＹＤＣＮ－７００－１０（商品名、新日鉄住金化学株式会社製、ｏ－クレゾールノボラック型エポキシ樹脂、エポキシ当量：２０９ｇ／ｅｑ）
　ＥＸＡ－８３０ＣＲＰ（商品名、ＤＩＣ株式会社製、ビスフェノールＦ型エポキシ樹脂、エポキシ当量：１５９ｇ／ｅｑ）
　ＪＥＲ　ＹＬ－９８０（商品名、三菱ケミカル株式会社製、ビスフェノールＡ型エポキシ樹脂、エポキシ当量：１８５ｇ／ｅｑ） (Epoxy resin)
YDCN-700-10 (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., o-cresol novolac type epoxy resin, epoxy equivalent: 209 g / eq)
EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 159 g / eq)
JER YL-980 (trade name, manufactured by Mitsubishi Chemical Corporation, bisphenol A type epoxy resin, epoxy equivalent: 185 g / eq)
（フェノール樹脂）
　ＨＥ－１００Ｃ－３０（商品名、エア・ウォーター株式会社製、フェノールアラルキル樹脂、水酸基当量：１７５ｇ／ｅｑ、軟化点７７℃）
　ＭＥＨ－７８００Ｈ（商品名、明和化成株式会社製、フェノールアラルキル樹脂、水酸基当量１７８ｇ／ｅｑ、軟化点８７℃） (Phenolic resin)
HE-100C-30 (trade name, manufactured by Air Water Co., Ltd., phenol aralkyl resin, hydroxyl group equivalent: 175 g / eq, softening point 77 ° C.)
MEH-7800H (trade name, manufactured by Meiwa Kasei Co., Ltd., phenol aralkyl resin, hydroxyl group equivalent 178 g / eq, softening point 87 ° C.)
（高分子量成分）
　ＨＴＲ－８６０Ｐ－３ＣＳＰ（商品名、ナガセケムテックス株式会社製、アクリルゴム、重量平均分子量：８０万、Ｔｇ：１２℃）
　ＳＧ－７０Ｌ（商品名、ナガセケムテックス株式会社製、アクリルゴム、重量平均分子量：９０万、Ｔｇ：－１３℃） (High molecular weight component)
HTR-860P-3CSP (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 ° C.)
SG-70L (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 900,000, Tg: −13 ° C.)
（無機フィラー）
　ＳＣ２０５０－ＨＬＧ（商品名、株式会社アドマテックス製、シリカフィラー分散液、平均粒径：０．５０μｍ）
　ＳＥ２０５０－ＭＣ（商品名、株式会社アドマテックス製、シリカフィラー分散液、平均粒径０．５０μｍ） (Inorganic filler)
SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.50 μm)
SE2050-MC (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size 0.50 μm)
（カップリング剤）
　Ａ－１１６０（商品名、モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、γ－ウレイドプロピルトリエトキシシラン）
　Ａ－１８９（商品名、モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社製、γ－メルカプトプロピルトリメトキシシラン） (Coupling agent)
A-1160 (Product name, Momentive Performance Materials Japan GK, γ-ureidopropyltriethoxysilane)
A-189 (Product name, Momentive Performance Materials Japan GK, γ-mercaptopropyltrimethoxysilane)
（硬化促進剤）
　２ＰＺ－ＣＮ（商品名、四国化成工業株式会社製、１－シアノエチル－２－フェニルイミダゾール）
　ＴＰＰ－Ｋ（商品名、北興化学工業株式会社製、テトラフェニルホスホニウムテトラフェニルボレート） (Curing accelerator)
2PZ-CN (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)
TPP-K (trade name, manufactured by Hokuko Chemical Co., Ltd., tetraphenylphosphonium tetraphenylborate)
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
＜接着シートの作製＞
（実施例１）
　合成例１の接着剤組成物のワニスを１００メッシュのフィルターでろ過し、真空脱泡した。基材フィルムとして、厚さ３８μｍの離型処理を施したポリエチレンテレフタレート（ＰＥＴ）フィルムを用意し、真空脱泡後の接着剤組成物のワニスをＰＥＴフィルム上に塗布した。塗布したワニスを、９０℃で５分間、続いて１４０℃で５分間の２段階で加熱乾燥した。こうして、ＰＥＴフィルム上に、Ｂステージ状態にある厚さ６０μｍの接着フィルムを備える接着シートを得た。次いで、２枚の接着シートを用意し、接着フィルム同士が接するように配置して、７０℃のホットプレート上でラミネートして、２層の接着フィルムからなる厚さを１２０μｍのフィルム状接着剤を備える接着シートを作製した。 <Preparation of adhesive sheet>
(Example 1)
The adhesive composition varnish of Synthesis Example 1 was filtered through a 100 mesh filter and vacuum degassed. As a base film, a polyethylene terephthalate (PET) film having a release treatment with a thickness of 38 μm was prepared, and an adhesive composition varnish after vacuum defoaming was applied onto the PET film. The applied varnish was heat-dried in two stages of 90 ° C. for 5 minutes, followed by 140 ° C. for 5 minutes. Thus, an adhesive sheet comprising an adhesive film having a thickness of 60 μm in a B-stage state was obtained on the PET film. Next, two adhesive sheets are prepared, arranged so that the adhesive films are in contact with each other, laminated on a hot plate at 70 ° C., and a film adhesive having a thickness of two layers of 120 μm is formed. An adhesive sheet provided was prepared.
（実施例２）
　合成例１の接着剤組成物のワニスを合成例２の接着剤組成物のワニスに変更した以外は、実施例１と同様にして、２層の接着フィルムからなる厚さを１２０μｍのフィルム状接着剤を備える接着シートを作製した。 (Example 2)
Except for changing the varnish of the adhesive composition of Synthesis Example 1 to the varnish of the adhesive composition of Synthesis Example 2, in the same manner as in Example 1, a film-like adhesive having a thickness of 120 μm consisting of two layers of adhesive films is used. An adhesive sheet comprising the agent was prepared.
（実施例３）
　合成例１の接着剤組成物のワニスを合成例３の接着剤組成物のワニスに変更した以外は、実施例１と同様にして、２層の接着フィルムからなる厚さを１２０μｍのフィルム状接着剤を備える接着シートを作製した。 Example 3
Except for changing the varnish of the adhesive composition of Synthesis Example 1 to the varnish of the adhesive composition of Synthesis Example 3, a film-like adhesive having a thickness of 120 μm consisting of two layers of adhesive films is the same as Example 1. An adhesive sheet comprising the agent was prepared.
（比較例１）
　合成例１の接着剤組成物のワニスを１００メッシュのフィルターでろ過し、真空脱泡した。基材フィルムとして、厚さ３８μｍの離型処理を施したポリエチレンテレフタレート（ＰＥＴ）フィルムを用意し、真空脱泡後の接着剤組成物のワニスをＰＥＴフィルム上に塗布した。塗布したワニスを、９０℃で１０分間、続いて１５０℃で１０分間の２段階で加熱乾燥した。こうして、ＰＥＴフィルム上に、Ｂステージ状態にある単層の厚さ１２０μｍのフィルム状接着剤を備える接着シートを作製した。 (Comparative Example 1)
The adhesive composition varnish of Synthesis Example 1 was filtered through a 100 mesh filter and vacuum degassed. As a base film, a polyethylene terephthalate (PET) film having a release treatment with a thickness of 38 μm was prepared, and an adhesive composition varnish after vacuum defoaming was applied onto the PET film. The applied varnish was heat-dried in two steps of 90 ° C. for 10 minutes and then 150 ° C. for 10 minutes. Thus, an adhesive sheet comprising a single-layer 120 μm thick film-like adhesive in a B-stage state was produced on a PET film.
（比較例２）
　９０℃で１０分間、１５０℃で１０分間の２段階の加熱乾燥を、１２０℃で２０分間、１６０℃で２０分間の２段階の加熱乾燥に変更した以外は、比較例１と同様にして、ＰＥＴフィルム上に、Ｂステージ状態にある単層の厚さ１２０μｍのフィルム状接着剤を備える接着シートを作製した。 (Comparative Example 2)
Except for changing the two-step heat drying at 90 ° C. for 10 minutes and 150 ° C. for 10 minutes to the two-step heat drying at 120 ° C. for 20 minutes and 160 ° C. for 20 minutes, the same as in Comparative Example 1, On the PET film, an adhesive sheet provided with a film adhesive having a single layer thickness of 120 μm in a B-stage state was produced.
（比較例３）
　合成例１の接着剤組成物のワニスを合成例２の接着剤組成物のワニスに変更した以外は、比較例２と同様にして、ＰＥＴフィルム上に、Ｂステージ状態にある単層の厚さ１２０μｍのフィルム状接着剤を備える接着シートを作製した。 (Comparative Example 3)
The thickness of the single layer in the B stage state on the PET film in the same manner as in Comparative Example 2 except that the varnish of the adhesive composition of Synthesis Example 1 was changed to the varnish of the adhesive composition of Synthesis Example 2. An adhesive sheet provided with a 120 μm film adhesive was prepared.
（比較例４）
　合成例１の接着剤組成物のワニスを合成例３の接着剤組成物のワニスに変更した以外は、比較例２と同様にして、ＰＥＴフィルム上に、Ｂステージ状態にある単層の厚さ１２０μｍのフィルム状接着剤を備える接着シートを作製した。 (Comparative Example 4)
The thickness of the single layer in the B stage state on the PET film in the same manner as in Comparative Example 2 except that the varnish of the adhesive composition of Synthesis Example 1 was changed to the varnish of the adhesive composition of Synthesis Example 3. An adhesive sheet provided with a 120 μm film adhesive was prepared.
＜各種物性の評価＞
　実施例１～３及び比較例１～４の接着シートのフィルム状接着剤について、溶剤含有率、８０℃におけるずり粘度、８０℃における貯蔵弾性率、１７５℃加圧オーブン硬化後の埋め込み性、及びブリード量の測定を行った。 <Evaluation of various physical properties>
For the film-like adhesives of the adhesive sheets of Examples 1 to 3 and Comparative Examples 1 to 4, the solvent content, the shear viscosity at 80 ° C., the storage elastic modulus at 80 ° C., the embedding property after curing at 175 ° C. under pressure oven, and The bleed amount was measured.
（溶剤含有率）
　上記接着シートから、基材フィルムを剥離除去し、フィルム状接着剤１ｇを、１質量％の２－（２－エトキシエトキシ）エタノールを含む１，４－ジオキサン溶液３０ｇに加え、振とう機で６時間撹拌した。撹拌後の溶液をガスクロマトグラフィー（キャリアガス：ヘリウム、カラム温度：１４０℃）で測定し、各溶剤と２－（２－エトキシエトキシ）エタノールとのピーク面積からフィルム状接着剤の溶剤含有率（質量％）を見積もった。結果を表２に示す。 (Solvent content)
The base film was peeled off from the adhesive sheet, and 1 g of the film adhesive was added to 30 g of a 1,4-dioxane solution containing 1% by mass of 2- (2-ethoxyethoxy) ethanol, and the mixture was shaken 6 Stir for hours. The solution after stirring was measured by gas chromatography (carrier gas: helium, column temperature: 140 ° C.), and the solvent content of the film adhesive (from the peak area of each solvent and 2- (2-ethoxyethoxy) ethanol ( Mass%) was estimated. The results are shown in Table 2.
（８０℃におけるずり粘度）
　上記接着シートから、基材フィルムを剥離除去し、厚さ方向に１０ｍｍ角に打ち抜くことで、１０ｍｍ角の四角形の積層体を得た。動的粘弾性装置ＡＲＥＳ（レオメトリック・サイエンティフィック社製）に直径８ｍｍの円形アルミプレート治具をセットし、さらにここに打ち抜いたフィルム状接着剤の四角形の積層体をセットした。その後、３５℃で５％の歪みを与えながら５℃／分の昇温速度で８０℃まで昇温させ、８０℃におけるずり粘度（Ｐａ・ｓ）を測定した。結果を表２に示す。 (Shear viscosity at 80 ° C)
From the adhesive sheet, the base film was peeled and removed, and punched into a 10 mm square in the thickness direction to obtain a 10 mm square square laminate. A circular aluminum plate jig having a diameter of 8 mm was set in a dynamic viscoelastic device ARES (manufactured by Rheometric Scientific), and a rectangular laminate of a film adhesive punched out was set here. Thereafter, the temperature was raised to 80 ° C. at a rate of 5 ° C./min while applying a strain of 5% at 35 ° C., and the shear viscosity (Pa · s) at 80 ° C. was measured. The results are shown in Table 2.
（８０℃における貯蔵弾性率）
　上記接着シートから、基材フィルムを剥離除去し、長さ４ｃｍ、幅４ｍｍに切り出した。動的粘弾性装置（製品名：Ｒｈｅｏｇｅｌ－Ｅ４０００、株式会社ユービーエム製）にセットし、引張り荷重をかけて、周波数１０Ｈｚ、３℃／分の昇温速度で８０℃まで昇温させ、８０℃における貯蔵弾性率を測定した。結果を表２に示す。 (Storage elastic modulus at 80 ° C)
The base film was peeled and removed from the adhesive sheet and cut into a length of 4 cm and a width of 4 mm. Set in a dynamic viscoelastic device (product name: Rheogel-E4000, manufactured by UBM Co., Ltd.), apply a tensile load and raise the temperature to 80 ° C. at a frequency of 10 Hz and a rate of 3 ° C./min. The storage elastic modulus was measured. The results are shown in Table 2.
（１７５℃加圧オーブン硬化後の埋め込み性）
　上記接着シートのフィルム状接着剤を、厚さ５０μｍの半導体ウェハ（８インチ）に７０℃で貼り付けた。次に、それらを７．５ｍｍ角にダイシングして半導体素子を得た。また、フィルム状接着剤ＨＲ－９００４Ｔ－１０（日立化成株式会社製、厚さ２０μｍ）を厚さ５０μｍの半導体ウェハ（８インチ）に７０℃で貼り付けた。次に、それらを３．０ｍｍ角にダイシングしてチップを得た。個片化したＨＲ－９００４Ｔ－１０付きのチップを、表面凹凸が最大６μｍである評価用基板に１３０℃、０．２０ＭＰａ、２秒間の条件で圧着し、１２０℃／２時間加熱し、半硬化させた。次に、このようにして得られたサンプルに、フィルム状接着剤付きの７．５ｍｍ半導体素子を１２０℃、０．２０ＭＰａ、２秒間の条件で圧着した。この際、先に圧着しているＨＲ－９００４Ｔ－１０付きのチップが中央となるように位置合わせを行った。得られたサンプルを加圧オーブンに投入し、３５℃から３℃／分の昇温速度で１７５℃まで昇温させ、１７５℃で３０分加熱した。このようにして得られたサンプルを超音波映像装置ＳＡＴ（日立建機製、品番ＦＳ２００ＩＩ、プローブ：２５ＭＨｚ）にてボイドの有無を観測し、ボイドが観測された場合は、単位面積あたりのボイドの面積を算出し、これらの分析結果を埋め込み性として評価した。評価基準は、以下のとおりである。結果を表２に示す。
　Ａ：ボイドが観測されなかった。
　Ｂ：ボイドが観測されたが、その割合が５面積％未満であった。
　Ｃ：ボイドが観測され、その割合が５面積％以上であった。 (Embeddability after 175 ° C pressure oven curing)
The film adhesive of the said adhesive sheet was affixed at 70 degreeC on the semiconductor wafer (8 inches) of thickness 50 micrometers. Next, they were diced to 7.5 mm square to obtain semiconductor elements. A film adhesive HR-9004T-10 (manufactured by Hitachi Chemical Co., Ltd., thickness 20 μm) was attached to a semiconductor wafer (8 inches) having a thickness of 50 μm at 70 ° C. Next, they were diced into 3.0 mm squares to obtain chips. A chip with HR-9004T-10 separated into pieces is pressure-bonded to an evaluation substrate having a maximum surface roughness of 6 μm under conditions of 130 ° C., 0.20 MPa for 2 seconds, heated at 120 ° C./2 hours, and semi-cured I let you. Next, a 7.5 mm semiconductor element with a film adhesive was pressure-bonded to the sample thus obtained under the conditions of 120 ° C., 0.20 MPa, and 2 seconds. At this time, alignment was performed so that the tip with HR-9004T-10 that was previously crimped was centered. The obtained sample was put into a pressure oven, heated from 35 ° C. to 175 ° C. at a heating rate of 3 ° C./min, and heated at 175 ° C. for 30 minutes. The samples thus obtained were observed for the presence or absence of voids using an ultrasonic imaging apparatus SAT (manufactured by Hitachi Construction Machinery, product number FS200II, probe: 25 MHz). If voids were observed, the void area per unit area Was calculated, and these analysis results were evaluated as embeddability. The evaluation criteria are as follows. The results are shown in Table 2.
A: No void was observed.
B: Although voids were observed, the ratio was less than 5 area%.
C: A void was observed, and the ratio was 5 area% or more.
（ブリード量の測定）
　上記１７５℃加圧オーブン硬化後の埋め込み性の評価において、「Ａ」及び「Ｂ」であったものについて、ブリード量を測定した。サンプルは、上記１７５℃加圧オーブン硬化後の埋め込み性で作製したサンプルと同様の手順で作製した。得られたサンプルの４辺の中心から、フィルム状接着剤のはみ出し量をそれぞれ測長し、その平均値をブリード量とした。結果を表２に示す。 (Measurement of bleed amount)
In the evaluation of the embedding property after curing at 175 ° C. under the pressure oven, the bleed amount was measured for “A” and “B”. The sample was produced in the same procedure as the sample produced by the embedding property after 175 degreeC pressurization oven hardening. The amount of protrusion of the film adhesive was measured from the center of the four sides of the obtained sample, and the average value was taken as the bleed amount. The results are shown in Table 2.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　表１より、実施例１～３の２層の接着フィルムからなる接着シートは、埋め込み性が良好であり、ブリードが抑制されていることが分かった。一方、比較例１の溶剤含有率が１．５質量％を超える単層の接着フィルムを用いた接着シートは、埋め込み性は良好であるものの、ブリードを抑制することができなかった。また、８０℃におけるずり粘度が５０００Ｐａ・ｓを超える単層の接着フィルムを用いた接着シートは、埋め込み性が充分ではなかった。これらの結果より、本発明のフィルム状接着剤が、熱圧着時に良好な埋め込み性を有しつつ、ブリードを抑制することが可能であることが確認された。 From Table 1, it was found that the adhesive sheets composed of the two-layer adhesive films of Examples 1 to 3 had good embedding properties and suppressed bleeding. On the other hand, the adhesive sheet using a single-layer adhesive film having a solvent content of more than 1.5% by mass in Comparative Example 1 was able to suppress bleeding, although the embedding property was good. Moreover, the adhesive sheet using the single-layer adhesive film having a shear viscosity at 80 ° C. exceeding 5000 Pa · s was not sufficiently embedded. From these results, it was confirmed that the film adhesive of the present invention can suppress bleed while having good embedding property at the time of thermocompression bonding.
　２…第１の接着フィルム、４…第２の接着フィルム、１０…フィルム状接着剤、１４…基板、２０…基材フィルム、３０…保護フィルム、４１…接着剤、４２…封止材、８４、９４…回路パターン、８８…第１のワイヤ、９０…有機基板、９８…第２のワイヤ、１００、１１０…接着シート、２００…半導体装置、Ｗａ…第１の半導体素子、Ｗａａ…第２の半導体素子。 DESCRIPTION OF SYMBOLS 2 ... 1st adhesive film, 4 ... 2nd adhesive film, 10 ... Film adhesive, 14 ... Board | substrate, 20 ... Base film, 30 ... Protective film, 41 ... Adhesive, 42 ... Sealing material, 84 94 ... Circuit pattern 88 ... First wire 90 ... Organic substrate 98 ... Second wire 100, 110 ... Adhesive sheet 200 ... Semiconductor device Wa ... First semiconductor element Waa ... Second Semiconductor element.

Claims (6)

  1. 　基板上に第１のワイヤを介して第１の半導体素子がワイヤボンディング接続されると共に、前記第１の半導体素子上に、第２の半導体素子が圧着されてなる半導体装置において、前記第２の半導体素子を圧着すると共に、前記第１のワイヤの少なくとも一部を埋め込むために用いられるフィルム状接着剤であって、
    　第１の接着フィルムと、前記第１の接着フィルム上に積層された第２の接着フィルムと、を備え、
    　前記フィルム状接着剤の溶剤含有率がフィルム状接着剤全量を基準として１．５質量％以下であり、
    　前記フィルム状接着剤の８０℃におけるずり粘度が５０００Ｐａ・ｓ以下である、フィルム状接着剤。     In a semiconductor device in which a first semiconductor element is wire-bonded to a substrate via a first wire, and a second semiconductor element is pressure-bonded on the first semiconductor element. A film adhesive used for crimping a semiconductor element and embedding at least a part of the first wire,
    A first adhesive film, and a second adhesive film laminated on the first adhesive film,
    The solvent content of the film adhesive is 1.5% by mass or less based on the total amount of the film adhesive,
    The film adhesive whose shear viscosity in 80 degreeC of the said film adhesive is 5000 Pa.s or less.
  2. 　前記フィルム状接着剤の厚さが３～１５０μｍである、請求項１に記載のフィルム状接着剤。 2. The film adhesive according to claim 1, wherein the film adhesive has a thickness of 3 to 150 μm.
  3. 　前記フィルム状接着剤の８０℃における貯蔵弾性率が１０ＭＰａ以下である、請求項１又は２に記載のフィルム状接着剤。 The film adhesive according to claim 1 or 2, wherein the storage elastic modulus of the film adhesive at 80 ° C is 10 MPa or less.
  4. 　請求項１～３のいずれか一項に記載のフィルム状接着剤の製造方法であって、
    　溶剤を含有する第１の接着剤組成物のワニスを基材上に塗布し、塗布された前記第１の接着剤組成物のワニスを５０～１５０℃で加熱乾燥し、溶剤含有率が第１の接着フィルム全量を基準として１．５質量％以下である第１の接着フィルムを作製する工程と、
    　溶剤を含有する第２の接着剤組成物のワニスを基材上に塗布し、塗布された前記第２の接着剤組成物のワニスを５０～１５０℃で加熱乾燥し、溶剤含有率が第２の接着フィルム全量を基準として１．５質量％以下である第２の接着フィルムを作製する工程と、
    　前記第１の接着フィルムと前記第２の接着フィルムとを貼り合わせる工程と、
    を備える、フィルム状接着剤の製造方法。     A method for producing a film adhesive according to any one of claims 1 to 3,
    A varnish of a first adhesive composition containing a solvent is applied onto a substrate, and the applied varnish of the first adhesive composition is heated and dried at 50 to 150 ° C. so that the solvent content is first. Producing a first adhesive film that is 1.5% by mass or less based on the total amount of the adhesive film of
    A varnish of a second adhesive composition containing a solvent is applied onto a substrate, and the applied varnish of the second adhesive composition is dried by heating at 50 to 150 ° C., so that the solvent content is second. Producing a second adhesive film that is 1.5% by mass or less based on the total amount of the adhesive film of
    Bonding the first adhesive film and the second adhesive film;
    A method for producing a film adhesive.
  5. 　基板上に第１のワイヤを介して第１の半導体素子がワイヤボンディング接続されると共に、前記第１の半導体素子上に、第２の半導体素子が請求項１～３のいずれか一項に記載のフィルム状接着剤を介して圧着されることで、前記第１のワイヤの少なくとも一部が前記フィルム状接着剤に埋め込まれてなる、半導体装置。 The first semiconductor element is connected to the substrate via a first wire by wire bonding, and the second semiconductor element is provided on the first semiconductor element according to any one of claims 1 to 3. A semiconductor device in which at least a part of the first wire is embedded in the film adhesive by being pressure-bonded via the film adhesive.
  6. 　基板上に第１のワイヤを介して第１の半導体素子を電気的に接続するワイヤボンディング工程と、
    　第２の半導体素子の片面に、請求項１～３のいずれか一項に記載のフィルム状接着剤を貼付するラミネート工程と、
    　前記フィルム状接着剤が貼付された第２の半導体素子を、前記フィルム状接着剤を介して圧着することで、前記第１のワイヤの少なくとも一部を前記フィルム状接着剤に埋め込むダイボンド工程と、
    を備える、半導体装置の製造方法。     A wire bonding step of electrically connecting the first semiconductor element on the substrate via the first wire;
    A laminating step of applying the film adhesive according to any one of claims 1 to 3 to one side of the second semiconductor element;
    A die bonding step of embedding at least a part of the first wire in the film adhesive by crimping the second semiconductor element to which the film adhesive is affixed via the film adhesive;
    A method for manufacturing a semiconductor device.
PCT/JP2018/003022 2018-01-30 2018-01-30 Film-form adhesive, method for producing same, and semiconductor device and method for producing same WO2019150445A1 (en)

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