CN111656499A - Film-like adhesive and method for producing same, and semiconductor device and method for producing same - Google Patents

Film-like adhesive and method for producing same, and semiconductor device and method for producing same Download PDF

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Publication number
CN111656499A
CN111656499A CN201880087615.9A CN201880087615A CN111656499A CN 111656499 A CN111656499 A CN 111656499A CN 201880087615 A CN201880087615 A CN 201880087615A CN 111656499 A CN111656499 A CN 111656499A
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China
Prior art keywords
adhesive
film
semiconductor element
wire
component
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CN201880087615.9A
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Chinese (zh)
Inventor
舛野大辅
中村祐树
桥本慎太郎
菊地健太
山崎智阳
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Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
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Publication of CN111656499A publication Critical patent/CN111656499A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

A film-like adhesive for wire bonding a first semiconductor element to a substrate via a first wire and for pressure-bonding a second semiconductor element to the first semiconductor element, the film-like adhesive being used for embedding at least a part of the first wire while pressure-bonding the second semiconductor element, the film-like adhesive comprising a first adhesive film and a second adhesive film laminated on the first adhesive film, the film-like adhesive having a solvent content of 1.5 mass% or less based on the total amount of the film-like adhesive, and a shear viscosity of the film-like adhesive at 80 ℃ of 5000Pa · s or less.

Description

Film-like adhesive and method for producing same, and semiconductor device and method for producing same
Technical Field
The invention relates to a film-like adhesive and a method for manufacturing the same, and a semiconductor device and a method for manufacturing the same.
Background
Conventionally, silver paste has been mainly used for bonding a semiconductor chip and a supporting member for mounting the semiconductor chip. However, with the recent miniaturization and integration of semiconductor chips, miniaturization and miniaturization are also required for supporting members used. On the other hand, when a silver paste is used, problems such as defects in wire bonding due to the overflow of the paste or the inclination of the semiconductor chip, difficulty in controlling the film thickness, and occurrence of voids may occur.
Therefore, in recent years, a film-like adhesive for bonding a semiconductor chip and a supporting member is used (for example, see patent document 1). When an adhesive sheet including a dicing tape and a film-like adhesive laminated on the dicing tape is used, the film-like adhesive is attached to the back surface of the semiconductor wafer, and the semiconductor wafer is diced to obtain individual semiconductor chips with the film-like adhesive. The obtained semiconductor chip with the film-like adhesive can be bonded to the supporting member through the film-like adhesive by thermocompression bonding.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2007-053240
Disclosure of Invention
Technical problem to be solved by the invention
However, as the size of the semiconductor chip decreases, the force applied per unit area during thermocompression bonding increases, and a phenomenon called bleeding may occur in which the film-like adhesive overflows from the semiconductor chip.
In addition, when a Film-like adhesive is used as a Wire embedding Film-like adhesive FOW (Film Over Wire) or a semiconductor chip embedding Film-like adhesive FOD (Film Over Die), high fluidity is required at the time of thermocompression bonding from the viewpoint of improving embeddability. Therefore, the frequency and amount of bleeding tend to increase further. According to circumstances, there is a risk that bleeding occurs to the upper surface of the semiconductor chip, thereby causing an electrical failure or a wire bonding failure.
The present invention has been made in view of such circumstances, and a main object thereof is to provide a film-like adhesive which has good embeddability in thermocompression bonding and can suppress bleeding.
Means for solving the problems
The present inventors have conducted extensive studies and found that the above-mentioned problems can be solved by using a film-like adhesive in which an adhesive film is laminated and further adjusting the solvent content and shear viscosity of the film-like adhesive, and thus completed the present invention.
One aspect of the present invention provides a film-like adhesive for wire bonding a first semiconductor element to a substrate via a first wire and for pressure-bonding a second semiconductor element to the first semiconductor element, the film-like adhesive being used for embedding at least a part of the first wire while pressure-bonding the second semiconductor element, the film-like adhesive comprising a first adhesive film and a second adhesive film laminated on the first adhesive film, the film-like adhesive having a solvent content of 1.5 mass% or less based on the total amount of the film-like adhesive, and a shear viscosity at 80 ℃ of the film-like adhesive being 5000Pa · s or less. The film-like adhesive has good embeddability in thermocompression bonding and is capable of suppressing bleeding.
The film-like adhesive may have a thickness of 3 to 150 μm. The film-like adhesive may have a storage elastic modulus at 80 ℃ of 10MPa or less.
In another aspect, the present invention provides a method for producing the film-like adhesive, including the steps of: a step of applying a varnish of a first adhesive composition containing a solvent to a substrate, and heating and drying the applied varnish of the first adhesive composition at 50 to 150 ℃ to produce a first adhesive film having a solvent content of 1.5 mass% or less based on the total amount of the first adhesive film; a step of applying a varnish of a second adhesive composition containing a solvent to a substrate, and heating and drying the applied varnish of the second adhesive composition at 50 to 150 ℃ to produce a second adhesive film having a solvent content of 1.5 mass% or less based on the total amount of the second adhesive film; and a step of bonding the first adhesive film and the second adhesive film.
In another aspect, the present invention provides a semiconductor device in which a first semiconductor element is wire-bonded to a substrate via a first wire, and a second semiconductor element is pressure-bonded to the first semiconductor element via the film-like adhesive, so that at least a part of the first wire is embedded in the film-like adhesive. The semiconductor device may be a wire-embedded semiconductor device in which at least a part of the first wire is embedded in the film-like adhesive, or may be a chip-embedded semiconductor device in which the first wire and the first semiconductor chip are embedded in the adhesive film.
In another aspect, the present invention provides a method for manufacturing a semiconductor device, including: a wire bonding step of electrically connecting the first semiconductor element to the substrate via the first wire; a laminating step of bonding the film-like adhesive to one surface of the second semiconductor element; and a die bonding step of embedding at least a part of the first lead in the film-like adhesive by pressure-bonding the second semiconductor element to which the film-like adhesive is attached via the film-like adhesive.
Effects of the invention
According to the present invention, a film-like adhesive which has good embeddability in thermocompression bonding and is capable of suppressing bleeding can be provided. Further, the present invention can provide a method for producing such a film-like adhesive, a semiconductor device using such a film-like adhesive, and a method for producing the semiconductor device.
Drawings
Fig. 1 is a schematic cross-sectional view showing a film-like adhesive according to an embodiment.
Fig. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment.
Fig. 3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment.
Fig. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment.
Fig. 5 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
Fig. 6 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
Fig. 7 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
Fig. 8 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
Fig. 9 is a schematic cross-sectional view showing a series of steps in a method for manufacturing a semiconductor device according to an embodiment.
Detailed Description
Embodiments of the present invention will be described below with reference to the accompanying drawings as appropriate. However, the present invention is not limited to the following embodiments.
In the present specification, (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other similar expressions such as (meth) acryloyl group.
[ film-like adhesive ]
Fig. 1 is a schematic cross-sectional view showing a film-like adhesive according to an embodiment. The film adhesive 10 includes a first adhesive film 2 and a second adhesive film 4 laminated on the first adhesive film 2. The first adhesive film 2 and the second adhesive film 4 can be both produced by molding a thermosetting first adhesive composition and a thermosetting second adhesive composition into a film shape, which are in a semi-cured (B-stage) state and are capable of being completely cured (C-stage) after curing treatment. The film adhesive 10 can be produced by laminating the obtained first adhesive film 2 and second adhesive film 4.
The first adhesive film 2 and the second adhesive film 4 constituting the film-like adhesive 10 preferably contain a thermosetting resin (hereinafter, sometimes simply referred to as a "component (a)"), a high-molecular-weight component (hereinafter, sometimes simply referred to as a "component (b)") and an inorganic filler (hereinafter, sometimes simply referred to as a "component (c)"). The first adhesive film 2 and the second adhesive film 4 may further contain a coupling agent (hereinafter, may be referred to simply as "component (d)") and a curing accelerator (hereinafter, may be referred to simply as "component (e)"). The first adhesive film 2 and the second adhesive film 4 may be left in a solvent used for forming the first adhesive film 2 and the second adhesive film 4. The solvent content of the film-like adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less based on the total amount of the film-like adhesive. The first adhesive film 2 and the second adhesive film 4 may be the same film or different films, but are preferably the same film.
[ thermosetting resin (a) ]
(a) The component (b) preferably contains an epoxy resin (hereinafter, may be referred to simply as a component (a 1)) and a phenol resin (hereinafter, may be referred to simply as a component (a 2)) which can be a curing agent for the epoxy resin, from the viewpoint of adhesiveness.
(a1) The component (c) is not particularly limited as long as it has an epoxy group in the molecule. Examples of the component (a1) include bisphenol a type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol a novolac type epoxy resins, bisphenol F novolac type epoxy resins, dicyclopentadiene skeleton-containing epoxy resins, stilbene type epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenol phenol methane type epoxy resins, biphenyl type epoxy resins, xylylene type epoxy resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, polyfunctional phenols, and polycyclic aromatic diglycidyl ether compounds such as anthracene. These substances may be used alone in 1 kind or in combination of 2 or more kinds. Among them, the component (a1) may be a cresol novolac type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol a type epoxy resin, from the viewpoint of heat resistance.
(a1) The epoxy equivalent of the component (A) may be 90 to 300g/eq, 110 to 290g/eq or 130 to 280 g/eq. (a1) When the epoxy equivalent of the component (c) is in such a range, the fluidity tends to be ensured while maintaining the bulk strength of the film adhesive.
(a1) The content of the component (c) may be 5 to 50 parts by mass, 10 to 40 parts by mass or 20 to 30 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c). (a1) When the content of the component (b) is 5 parts by mass or more, the embeddability of the film adhesive tends to be more favorable. (a1) When the content of the component (b) is 50 parts by mass or less, the occurrence of bleeding tends to be further suppressed.
(a2) The component (c) is not particularly limited as long as it has a phenolic hydroxyl group in the molecule. Examples of the component (a2) include a novolak-type phenol resin obtained by condensing or polycondensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol a, bisphenol F, phenylphenol, and aminophenol and/or naphthols such as α -naphthol, β -naphthol, and dihydroxynaphthalene with a compound having an aldehyde group such as formaldehyde in the presence of an acidic catalyst, a phenol aralkyl resin or a naphthol aralkyl resin synthesized from phenols such as allylated bisphenol a, allylated bisphenol F, allylated naphthalenediol, phenol novolak, and phenols and/or naphthols and dimethoxyp-xylene or bis (methoxymethyl) biphenyl. These substances may be used alone in 1 kind or in combination of 2 or more kinds. Among them, the component (a2) may be a phenol aralkyl resin, a naphthol aralkyl resin, or a novolac type phenol resin from the viewpoint of moisture absorption and heat resistance.
(a2) The hydroxyl equivalent of the component (A) may be 80 to 250g/eq, 90 to 200g/eq or 100 to 180 g/eq. (a2) When the hydroxyl group equivalent of the component (c) is in such a range, the adhesive strength tends to be maintained higher while the fluidity of the film adhesive is maintained.
(a2) The softening point of the component may be 50-140 deg.C, 55-120 deg.C or 60-100 deg.C.
(a2) The content of the component (c) may be 5 to 50 parts by mass, 10 to 40 parts by mass or 20 to 30 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c). (a2) When the content of the component (b) is 5 parts by mass or more, more favorable curability tends to be obtained. (a2) When the content of the component (b) is 50 parts by mass or less, the embedding property of the film-like adhesive tends to be more favorable.
(a1) The ratio of the epoxy equivalent of the component (a) to the hydroxyl equivalent of the component (a2) (epoxy equivalent of the component (a 1)/(hydroxyl equivalent of the component (a 2)) may be 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45, from the viewpoint of curability. When the equivalent ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
(b) high molecular weight component
(b) The component (B) is preferably a substance having a glass transition temperature (Tg) of 50 ℃ or lower.
Examples of the component (b) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins, and modified products thereof.
(b) The component (b) may contain an acrylic resin from the viewpoint of fluidity. Here, the acrylic resin refers to a polymer containing a structural unit derived from a (meth) acrylate ester. The acrylic resin is preferably a polymer containing, as a constituent unit, a constituent unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group. The acrylic resin may be an acrylic rubber such as a copolymer of (meth) acrylate and acrylonitrile.
The glass transition temperature (Tg) of the acrylic resin may be-50 to 50 ℃ or-30 to 30 ℃. When the Tg of the acrylic resin is-50 ℃ or higher, the adhesive composition tends to be prevented from excessively increasing in flexibility. This makes it easy to cut the film-like adhesive during wafer dicing, and prevents the occurrence of burrs. When the Tg of the acrylic resin is 50 ℃ or lower, the decrease in flexibility of the adhesive composition tends to be suppressed. Therefore, when the film-like adhesive is attached to the wafer, the holes tend to be sufficiently filled. In addition, chipping during dicing due to a decrease in adhesion of the wafer can be prevented. Here, the glass transition temperature (Tg) is a value measured by DSC (differential scanning calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku corporation).
The weight average molecular weight (Mw) of the acrylic resin may be 10 to 300 or 50 to 200 ten thousand. When the Mw of the acrylic resin is within such a range, the film formability, the film strength, the flexibility, the adhesiveness, and the like can be appropriately controlled, and the reflow property is excellent, and the embeddability can be improved. Here, Mw is a value measured by Gel Permeation Chromatography (GPC) and converted using a calibration curve obtained from standard polystyrene.
As the acrylic resin, commercially available products such as SG-70L, SG-708-6, WS-023EK30, SG-280EK23, HTR-860P-3CSP-3DB (all manufactured by Nagasechemx Co., Ltd.).
(b) The content of the component (c) may be 50 to 70 parts by mass, 10 to 50 parts by mass or 15 to 30 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c). (b) When the content of the component (b) is 5 parts by mass or more, the fluidity during molding and the handling property at high temperature can be further improved. (b) When the content of the component (b) is 70 parts by mass or less, the embedding property can be further improved.
< (c) inorganic Filler >
Examples of the component (c) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, and silica. These substances may be used alone in 1 kind or in combination of 2 or more kinds. Among them, the component (c) may be silica from the viewpoint of compatibility with the resin.
(c) The average particle diameter of the component (C) may be 0.005 to 1 μm or 0.05 to 0.5 μm from the viewpoint of improving adhesiveness. Here, the average particle diameter is a value obtained by conversion from the BET specific surface area.
(c) The content of the component (c) may be 5 to 50 parts by mass, 15 to 45 parts by mass or 25 to 40 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c). (c) When the content of the component (b) is 5 parts by mass or more, the fluidity of the film-like adhesive tends to be further improved. (c) When the content of the component (b) is 50 parts by mass or less, the cuttability of the film-like adhesive tends to be more excellent.
[ coupling agent (d) ]
(d) The ingredient may be a silane coupling agent. Examples of the silane coupling agent include gamma-ureidopropyltriethoxysilane, gamma-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-aminoethyl) aminopropyltrimethoxysilane. These substances may be used alone in 1 kind or in combination of 2 or more kinds.
(d) The content of the component (c) may be 0.01 to 5 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c).
< e) curing Accelerator >
(e) The component (c) is not particularly limited, and a generally used one can be used. Examples of the component (e) include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. These substances may be used alone in 1 kind or in combination of 2 or more kinds. Among them, the component (e) may be imidazoles and derivatives thereof from the viewpoint of reactivity.
Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These substances may be used alone in 1 kind or in combination of 2 or more kinds.
(e) The content of the component (c) may be 0.01 to 1 part by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c).
< solvent >
The first adhesive film 2 and the second adhesive film 4 may have a solvent left therein, which is used when the first adhesive film 2 and the second adhesive film 4 are formed, as described later. The solvent is not particularly limited as long as it can uniformly dissolve, knead or disperse the respective components, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, and dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene and xylene. From the viewpoint of high drying speed and low cost, methyl ethyl ketone, cyclohexanone, and the like are preferably used.
The solvent content of the film-like adhesive 10 (the first adhesive film 2 and the second adhesive film 4) is 1.5% by mass or less based on the total amount of the film-like adhesive. The solvent content may be 1.2 mass% or less, 0.9 mass% or less, or 0.6 mass% or less. When the solvent content is 1.5% by mass or less, bleeding tends to be suppressed. The lower limit of the solvent content is not particularly limited, and may be, for example, 0.01 mass% or more.
The adhesive film tends to be easily dried by heating the solvent to reduce the solvent content by reducing the thickness thereof. Therefore, in the case of the film-shaped adhesive 10 including the first adhesive film 2 and the second adhesive film 4, the solvent content can be easily reduced without increasing the heat drying condition, as compared with the case of the same thickness of the single layer. The solvent content of the film-like adhesive 10 can be adjusted by changing the conditions for drying the varnish of the adhesive composition by heating, for example.
The first adhesive film 2 and the second adhesive film 4 may further contain other components. Examples of the other components include an ion scavenger and a rheology controller. The content of these other components may be 0.01 to 20 parts by mass based on 100 parts by mass of the total mass of the component (a), the component (b) and the component (c).
The film-like adhesive 10 (the first adhesive film 2 and the second adhesive film 4) has a shear viscosity of 5000Pa · s or less at 80 ℃. The shear viscosity at 80 ℃ may be 3500 pas or less, 2500 pas or less, or 1500 pas or less. When the shear viscosity at 80 ℃ is 5000 pas or less, the fluidity tends to be improved and the embeddability tends to be improved. The lower limit of the shear viscosity at 80 ℃ is not particularly limited, and may be, for example, 10 pas or more. The shear viscosity at 80 ℃ can be measured, for example, by the method described in examples.
The shear viscosity at 80 ℃ of the film-like adhesive 10 tends to depend on the contents of the components (b) and (c), for example, and can be adjusted by changing these.
The storage elastic modulus of the film-like adhesive 10 (the first adhesive film 2 and the second adhesive film 4) at 80 ℃ may be 10MPa or less. The storage elastic modulus at 80 ℃ may be 5MPa or less, 1MPa or less, or 0.5MPa or less. When the storage elastic modulus at 80 ℃ is 10MPa or less, the embedding property tends to be more excellent. The lower limit of the storage modulus of elasticity at 80 ℃ is not particularly limited, and may be, for example, 0.02MPa or more.
The storage elastic modulus at 80 ℃ of the film-like adhesive 10 can be adjusted by changing the equivalent weight of the functional group of the component (a), for example.
The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be the same or different from each other, and are preferably the same. The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 2 to 140 μm, respectively. The thickness of the first adhesive film 2 and the thickness of the second adhesive film 4 may be 5 to 110 μm, 10 to 90 μm, or 20 to 60 μm, respectively. When the thickness of each of these is 2 μm or more, the embedding property tends to be more favorable. When the thickness of each of them is 140 μm or less, the solvent content tends to be further reduced.
The thickness of the film-like adhesive 10 (the total thickness of the first adhesive film 2 and the second adhesive film 4) may be 3 to 150 μm so that the irregularities of the first lead, the first semiconductor element, the wiring circuit of the substrate, and the like can be sufficiently filled. The film-like adhesive 10 may have a thickness of 20 to 140m or 40 to 130 μm. When the thickness of the film-like adhesive 10 is 3 μm or more, the embedding property tends to be more excellent. When the thickness of the film-like adhesive 10 is 150 μm or less, bleeding tends to be further suppressed.
The film adhesive 10 may further include an adhesive film laminated on the first adhesive film 2 and the second adhesive film 4. That is, the film adhesive 10 may include 3 or more adhesive films. The adhesive films other than the first adhesive film 2 and the second adhesive film 4 may be the same as the first adhesive film 2 and the second adhesive film 4.
[ method for producing film-like adhesive ]
The method for producing the film-shaped adhesive comprises the following steps: a step of applying a varnish of a first adhesive composition containing a solvent to a substrate, and heating and drying the applied varnish of the first adhesive composition at 50 to 150 ℃ to produce a first adhesive film having a solvent content of 1.5 mass% or less based on the total amount of the first adhesive film; a step of applying a varnish of a second adhesive composition containing a solvent to a substrate, and heating and drying the applied varnish of the second adhesive composition at 50 to 150 ℃ to produce a second adhesive film having a solvent content of 1.5 mass% or less based on the total amount of the second adhesive film; and a step of bonding the first adhesive film and the second adhesive film.
The varnish of the first adhesive composition and the varnish of the second adhesive composition can be prepared by, for example, mixing and kneading the components (a) to (e), and if necessary, the component (d) and the component (e) in a solvent.
The mixing and kneading may be carried out by appropriately combining them using a conventional dispersing machine such as a stirrer, a masher, a triple roll, a ball mill, or the like.
The solvent used for preparing the varnish of the first adhesive composition and the varnish of the second adhesive composition is not limited as long as the respective components can be uniformly dissolved, kneaded, or dispersed, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, and dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene and xylene. From the viewpoint of high drying speed and low cost, methyl ethyl ketone, cyclohexanone, and the like are preferably used.
Examples of the substrate film include, but are not particularly limited to, polyester films, polypropylene films (e.g., OPP films), polyethylene terephthalate films, polyimide films, polyether imide films, polyether naphthalate films, and methylpentene films.
As a method for applying the varnish of the first adhesive composition and the varnish of the second adhesive composition to the base film, known methods can be used, and examples thereof include a blade coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, and the like. The conditions for the heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, and the heat drying may be performed, for example, by heating at 50 to 150 ℃ for 1 to 30 minutes. The heating and drying may be performed by raising the temperature in stages at a temperature in the range of 50 to 150 ℃. By setting the heating temperature to 50 ℃ or higher, the solvent content of the first adhesive film 2 and the second adhesive film 4 (film-like adhesive 10) tends to be 1.5 mass% or less based on the total amount of the film-like adhesive. On the other hand, when the heating temperature is 150 ℃ or lower, the progress of curing of the adhesive composition tends to be suppressed.
The film-like adhesive 10 can be produced by bonding the first adhesive film 2 and the second adhesive film 4 together under predetermined conditions (for example, room temperature (20 ℃) or a heated state) using a roll laminator, a vacuum laminator, or the like.
The film adhesive 10 can also be produced as follows: the adhesive film is produced by first applying a varnish of the first adhesive composition to a base film, heating and drying the solvent to remove the varnish to produce the first adhesive film 2, then applying a varnish of the second adhesive composition to the first adhesive film 2, and heating and drying the solvent to remove the varnish to form the second adhesive film.
[ adhesive sheet ]
Fig. 2 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment. The adhesive sheet 100 includes a base film 20 and a film-like adhesive 10 formed of a first adhesive film 2 and a second adhesive film 4 provided on the base film 20.
The substrate film 20 may also be a dicing tape. Such an adhesive sheet can be used as a dicing/die bonding integrated adhesive sheet. In this case, since the laminating process for the semiconductor wafer is performed once, the operation can be made more efficient.
Examples of the dicing tape include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. The dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as needed. The dicing tape preferably has adhesiveness. The dicing tape may be one that gives adhesiveness to the plastic film or one that has an adhesive layer on one surface of the plastic film.
The adhesive sheet 100 is prepared by first preparing a varnish of the first adhesive composition, applying the varnish to a substrate film, and heating and drying the solvent to remove the solvent, thereby producing the first adhesive film 2. Next, the second adhesive film 4 is separately prepared from the varnish of the second adhesive composition, and the second adhesive film 4 is laminated on the first adhesive film 2.
Fig. 3 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment. The adhesive sheet 110 further includes a protective film 30 laminated on the surface (the surface on the second adhesive film 4 side) of the film adhesive 10 opposite to the base film 20. The protective film 30 may be the same as the substrate film 20 described above. The thickness of the protective film may be, for example, 60 to 200 μm or 70 to 170 μm.
[ semiconductor device ]
Fig. 4 is a schematic cross-sectional view showing a semiconductor device according to an embodiment. The semiconductor device 200 is a semiconductor device in which a first semiconductor element Wa of a first stage is wire-bonded to a substrate 14 via a first wire 88, and a second semiconductor element Wa is pressed against the first semiconductor element Wa via a film-like adhesive 10, so that at least a part of the first wire 88 is embedded in the film-like adhesive 10. The semiconductor device may be a wire-embedded semiconductor device in which at least a part of the first wire 88 is embedded, or may be a semiconductor device in which the first wire 88 and the first semiconductor element Wa are embedded. In the semiconductor device 200, the substrate 14 and the second semiconductor element Waa are electrically connected through the second wire 98, and the second semiconductor element Waa is sealed with the sealing material 42.
The thickness of the first semiconductor element Wa may be 10 to 170 μm, and the thickness of the second semiconductor element Waa may be 20 to 400 μm. The first semiconductor element Wa embedded in the film adhesive 10 is a controller chip for driving the semiconductor device 200.
The substrate 14 is formed of an organic substrate 90 having two circuit patterns 84 and 94 formed on the surface thereof. The first semiconductor element Wa is pressure-bonded to the circuit pattern 94 with the adhesive 41 interposed therebetween. The second semiconductor element Wa is bonded to the substrate 14 through the film adhesive 10 so as to cover the circuit pattern 94, the first semiconductor element Wa, and a part of the circuit pattern 84, which are not bonded to the first semiconductor element Wa. The film adhesive 10 is embedded in the height difference of the unevenness of the substrate 14 caused by the circuit patterns 84 and 94. Further, the second semiconductor element Waa, the circuit pattern 84, and the second lead 98 are sealed with a sealing material 42 made of resin.
[ method for manufacturing semiconductor device ]
The method for manufacturing a semiconductor device according to the present embodiment includes the steps of: a first wire bonding step of electrically connecting the first semiconductor element to the substrate via the first wire; a laminating step of bonding the film-like adhesive to one surface of the second semiconductor element; and a die bonding step of embedding at least a part of the first lead in the film-like adhesive by pressure-bonding the second semiconductor element to which the film-like adhesive is attached via the film-like adhesive.
Fig. 5 to 9 are schematic cross-sectional views showing a series of steps of a method for manufacturing a semiconductor device according to one embodiment. The semiconductor device 200 of the present embodiment is a semiconductor device in which the first conductive line 88 and the first semiconductor element Wa are embedded, and is manufactured by the following procedure. First, as shown in fig. 5, first semiconductor element Wa having adhesive 41 is pressed against circuit pattern 94 on substrate 14, and circuit pattern 84 on substrate 14 is electrically connected to first semiconductor element Wa via first lead wire 88 (first wire bonding step).
Next, an adhesive sheet 100 is laminated on one surface of a semiconductor wafer (for example, 50 μm in thickness and 8 inches in size), and the base film 20 is peeled off, thereby attaching the film-like adhesive 10 (for example, 135 μm in thickness) on one surface of the semiconductor wafer. Further, after a dicing tape is attached to the film-like adhesive 10, the film-like adhesive is cut into a predetermined size (for example, 7.5mm square), and the second semiconductor element Waa to which the film-like adhesive 10 is attached shown in fig. 6 is obtained (laminating step).
The temperature condition of the laminating process can be 50-100 ℃ or 60-80 ℃. When the temperature in the laminating step is 50 ℃ or higher, good adhesion to the semiconductor wafer can be obtained. When the temperature in the laminating step is 100 ℃ or lower, excessive flow of the film-like adhesive 10 in the laminating step can be suppressed, and thus, occurrence of a change in thickness or the like can be prevented.
Examples of the dicing method include blade dicing using a rotary knife, a method of cutting the film-like adhesive by laser, or a method of cutting both the wafer and the film-like adhesive.
Further, the second semiconductor element Wa to which the film-like adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is connected by bonding via the first lead wire 88. Specifically, as shown in fig. 7, the second semiconductor element Wa to which the film-like adhesive 10 is attached is placed such that the film-like adhesive 10 covers the first lead wire 88 and the first semiconductor element Wa, and then, as shown in fig. 8, the second semiconductor element Wa is pressed against the substrate 14, whereby the second semiconductor element Wa is fixed to the substrate 14 (die bonding step). In the die bonding step, the film-like adhesive 10 is preferably pressure-bonded at 80 to 180 ℃ and 0.01 to 0.50MPa for 0.5 to 3.0 seconds. After the die bonding step, the film-like adhesive 10 is pressurized and heated at 60 to 175 ℃ and 0.3 to 0.7MPa for 5 minutes or longer.
Next, as shown in fig. 9, after the substrate 14 and the second semiconductor element Waa are electrically connected through the second wire 98 (second wire bonding step), the circuit pattern 84, the second wire 98, and the second semiconductor element Waa are sealed with the sealing material 42. Through such steps, the semiconductor device 200 can be manufactured.
In another embodiment, the semiconductor device may be a wire-embedded semiconductor device in which at least a part of the first wire 88 is embedded.
Examples
The present invention will be described in more detail with reference to the following examples. However, the present invention is not limited to these examples.
< preparation of varnish of adhesive composition >
(Synthesis examples 1 to 3)
Cyclohexanone was added to a composition comprising (a) an epoxy resin and a phenol resin which are thermosetting resins and (c) an inorganic filler, and the mixture was stirred and mixed, with the names and the composition ratios (unit: parts by mass) shown in table 1. To this, acrylic rubbers (b) as a high molecular weight component shown in table 1 were added and stirred, and further, (d) a coupling agent and (e) a curing accelerator shown in table 1 were added and stirred until the components became uniform, to prepare varnishes of the adhesive compositions of synthesis examples 1 to 3.
In addition, symbols of each component in table 1 represent the following substances.
(epoxy resin)
YDCN-700-10 (trade name, manufactured by Nissi iron Tokyo chemical Co., Ltd., o-cresol novolac type epoxy resin, epoxy equivalent: 209g/eq)
EXA-830CRP (trade name, bisphenol F type epoxy resin manufactured by DIC corporation, epoxy equivalent: 159g/eq)
JER YL-980 (trade name, bisphenol A epoxy resin, product of Mitsubishi Chemical Co., Ltd.; epoxy equivalent: 185g/eq)
(phenol resin)
HE-100C-30 (trade name, product of AIR Water Co., Ltd., phenol aralkyl resin, hydroxyl equivalent 175g/eq, softening point 77 ℃ C.)
MEH-7800H (trade name, product of Minghe Kabushiki Kaisha, phenol aralkyl resin, hydroxyl equivalent 178g/eq, softening point 87 ℃ C.)
(high molecular weight component)
HTR-860P-3CSP (trade name, manufactured by Nagasechelmtex Co., Ltd., acrylic rubber, weight average molecular weight: 80 ten thousand, Tg: 12 ℃ C.)
SG-70L (trade name, manufactured by Nagasechelmtex, acrylic rubber, weight average molecular weight: 90 ten thousand, Tg: -13 ℃ C.)
(inorganic Filler)
SC2050-HLG (trade name, manufactured by Admatechs, Ltd., silica filler dispersion, average particle diameter: 0.50 μm)
SE2050-MC (trade name, product name, manufactured by Admatechs, silica filler dispersion, average particle size 0.50 μm)
(coupling agent)
A-1160 (trade name, gamma-ureidopropyltriethoxysilane manufactured by Momentive Performance Materials Japan K.K.)
A-189 (trade name, gamma-mercaptopropyltrimethoxysilane, manufactured by Momentive Performance Materials Japan Ltd.)
(curing accelerators)
2PZ-CN (trade name, product of Siguo Kasei Kogyo, 1-cyanoethyl-2-phenylimidazole)
TPP-K (product name, tetraphenylphosphine tetraphenylboronate, manufactured by Beixinghe chemical industries, Ltd.)
[ Table 1]
Figure BDA0002600091700000151
< preparation of adhesive sheet >
(example 1)
The varnish of the adhesive composition of synthesis example 1 was filtered with a 100-mesh filter and vacuum defoamed. As a base film, a release-treated polyethylene terephthalate (PET) film having a thickness of 38 μm was prepared, and a varnish of the adhesive composition after vacuum defoaming was applied to the PET film. The applied varnish was dried by heating at 2 stages of 90 ℃ for 5 minutes and then at 140 ℃ for 5 minutes. Thus, an adhesive sheet having an adhesive film of 60 μm thickness in a B-stage state on a PET film was obtained. Next, 2 adhesive sheets were prepared, and the adhesive films were arranged so as to be in contact with each other, and laminated on a hot plate at 70 ℃.
(example 2)
An adhesive sheet including a film-like adhesive having a thickness of 120 μm formed from 2-layer adhesive films was produced in the same manner as in example 1, except that the varnish of the adhesive composition of synthesis example 1 was changed to the varnish of the adhesive composition of synthesis example 2.
(example 3)
An adhesive sheet including a film-like adhesive having a thickness of 120 μm formed from 2-layer adhesive films was produced in the same manner as in example 1, except that the varnish of the adhesive composition of synthesis example 1 was changed to the varnish of the adhesive composition of synthesis example 3.
Comparative example 1
The varnish of the adhesive composition of synthesis example 1 was filtered with a 100-mesh filter and vacuum defoamed. As a base film, a release-treated polyethylene terephthalate (PET) film having a thickness of 38 μm was prepared, and a varnish of the adhesive composition after vacuum defoaming was applied to the PET film. The applied varnish was dried by heating at 2 stages of 90 ℃ for 10 minutes and then 150 ℃ for 10 minutes. In this manner, an adhesive sheet was obtained which was a PET film provided with a film-like adhesive having a thickness of 120 μm in a single layer in a B-stage state.
Comparative example 2
An adhesive sheet having a single layer of a film-like adhesive with a thickness of 120 μm in a B-stage state on a PET film was produced in the same manner as in comparative example 1, except that 2-stage heat drying at 90 ℃ for 10 minutes and 150 ℃ for 10 minutes was changed to 2-stage heat drying at 120 ℃ for 20 minutes and 160 ℃ for 20 minutes.
Comparative example 3
An adhesive sheet having a single layer of 120 μm thick film-like adhesive in a B-stage state on a PET film was produced in the same manner as in comparative example 2, except that the varnish of the adhesive composition of synthesis example 1 was changed to the varnish of the adhesive composition of synthesis example 2.
Comparative example 4
An adhesive sheet having a single layer of 120 μm thick film-like adhesive in a B-stage state on a PET film was produced in the same manner as in comparative example 2, except that the varnish of the adhesive composition of synthesis example 1 was changed to the varnish of the adhesive composition of synthesis example 3.
< evaluation of various physical Properties >
The film adhesives of the adhesive sheets of examples 1 to 3 and comparative examples 1 to 4 were measured for solvent content, shear viscosity at 80 ℃, storage elastic modulus at 80 ℃, embeddability after curing in a pressurized oven at 175 ℃ and amount of bleeding.
(solvent content ratio)
The substrate film was peeled off from the adhesive sheet, and 1g of the film-like adhesive was added to 30g of a1, 4-dioxane solution containing 1 mass% 2- (2-epoxy-group) ethanol, and the mixture was stirred for 6 hours by a shaker. The stirred solution was measured by gas chromatography (carrier gas: helium, column temperature: 140 ℃ C.), and the solvent content (mass%) of the film-like adhesive was estimated from the peak areas of each solvent and 2- (2-epoxyepoxy) ethanol. The results are shown in table 2.
(shear viscosity at 80 ℃ C.)
The base film was peeled off from the adhesive sheet, and a 10mm square hole was formed in the thickness direction to obtain a 10mm square rectangular laminate. A circular aluminum plate jig having a diameter of 8mm was attached to a dynamic visco-elastic apparatus ARES (manufactured by Rheometric Scientific Co., Ltd.), and a quadrangular laminate of a perforated film-like adhesive was attached thereto. Then, while imparting 5% strain at 35 ℃, the temperature was raised to 80 ℃ at a temperature rise rate of 5 ℃/min, and the shear viscosity (pas) at 80 ℃ was measured. The results are shown in table 2.
(storage modulus of elasticity at 80 ℃ C.)
The substrate film was peeled off from the adhesive sheet, and cut into pieces having a length of 4cm and a width of 4 mm. The resulting film was mounted on a dynamic viscoelastometer (product name: Rheogel-E4000, manufactured by UBM Co., Ltd.), a tensile load was applied thereto, the temperature was raised to 80 ℃ at a frequency of 10Hz and a temperature raising rate of 3 ℃/min, and the storage modulus at 80 ℃ was measured. The results are shown in table 2.
(embeddability after curing in a pressurized oven at 175 ℃ C.)
The film-like adhesive of the above adhesive sheet was adhered to a semiconductor wafer (8 inches) having a thickness of 50 μm at 70 ℃. Then, they were cut into 7.5mm squares to obtain semiconductor elements. Further, a film-like adhesive HR-9004T-10 (manufactured by Hitachi chemical Co., Ltd., thickness: 20 μm) was attached to a semiconductor wafer (8 inches) having a thickness of 50 μm at 70 ℃. Thereafter, they were cut into 3.0mm squares to obtain chips. A chip with HR-9004T-10, which was prepared as a single piece, was pressure-bonded to an evaluation substrate having a surface irregularity of at most 6 μm at 130 ℃ under 0.20MPa for 2 seconds, and then heated at 120 ℃ for 2 hours to be semi-cured. Next, a 7.5mm semiconductor element with a film-like adhesive was pressure-bonded to the thus-obtained sample at 120 ℃ under 0.20MPa for 2 seconds. At this point, the chip with HR-9004T-10, previously crimped, is centered. The obtained sample was put into a pressurized oven, heated from 35 ℃ to 175 ℃ at a heating rate of 3 ℃/min, and heated at 175 ℃ for 30 minutes. The presence or absence of voids was observed in the thus-obtained sample using an ultrasonic imaging apparatus SAT (model FS200II, probe: 25MHz), and when voids were observed, the area of the voids per unit area was calculated and the analysis results were evaluated as embeddability. The evaluation criteria are as follows. The results are shown in Table 2.
A: no voids were observed.
B: although voids were observed, the proportion thereof was less than 5 area%.
C: voids were observed, and the proportion thereof was 5 area% or more.
(measurement of exudation amount)
The amount of bleeding was measured for the cases "A" or "B" in the evaluation of embeddability after curing in the pressurized oven at 175 ℃. The samples were prepared in the same manner as the samples prepared in the embedding property after curing in the pressurized oven at 175 ℃. The amount of overflow of the film-like adhesive was measured from the center of each of the 4 sides of the obtained sample, and the average value thereof was defined as the amount of overflow. The results are shown in table 2.
[ Table 2]
Figure BDA0002600091700000181
As is clear from table 1, the adhesive sheets of examples 1 to 3, which were formed of 2-layer adhesive films, had good embeddability and suppressed bleeding. On the other hand, the adhesive sheet of comparative example 1 using the single-layer adhesive film having a solvent content of more than 1.5 mass% had good embeddability, but could not suppress bleeding. Further, an adhesive sheet using a single-layer adhesive film having a shear viscosity at 80 ℃ of more than 5000Pa · s is insufficient in embeddability. From these results, it was confirmed that the film-like adhesive of the present invention has good embeddability in thermocompression bonding and can suppress bleeding.
Description of the symbols
2 a first adhesive film, 4 a second adhesive film, 10 a film-like adhesive, 14 a substrate, 20 a base material film, 30 a protective film, 41 an adhesive, 42 a sealing material, 84, 94 a circuit pattern, 88 a first wire, 90 an organic substrate, 98 a second wire, 100, 110 an adhesive sheet, 200 a semiconductor device, Wa first semiconductor element, Wa second semiconductor element.

Claims (6)

1. A film-like adhesive for embedding at least a part of a first wire while pressing a second semiconductor element onto a first semiconductor element in a semiconductor device in which the first semiconductor element is wire-bonded to a substrate via the first wire,
the film adhesive comprises a first adhesive film and a second adhesive film laminated on the first adhesive film,
the solvent content of the film-shaped adhesive is 1.5% by mass or less based on the total amount of the film-shaped adhesive,
the film-like adhesive has a shear viscosity of 5000 pas or less at 80 ℃.
2. The film-like adhesive according to claim 1, wherein the thickness of the film-like adhesive is 3 to 150 μm.
3. The film-like adhesive according to claim 1 or 2, wherein the storage elastic modulus of the film-like adhesive at 80 ℃ is 10MPa or less.
4. A method for producing a film-like adhesive according to any one of claims 1 to 3, comprising:
a step of applying a varnish of a first adhesive composition containing a solvent to a substrate, and heating and drying the applied varnish of the first adhesive composition at 50 to 150 ℃ to produce a first adhesive film having a solvent content of 1.5 mass% or less based on the total amount of the first adhesive film;
a step of applying a varnish of a second adhesive composition containing a solvent to a substrate, and heating and drying the applied varnish of the second adhesive composition at 50 to 150 ℃ to produce a second adhesive film having a solvent content of 1.5 mass% or less based on the total amount of the second adhesive film; and
and a step of bonding the first adhesive film and the second adhesive film.
5. A semiconductor device, wherein a first semiconductor element is wire-bonded to a substrate via a first wire, and a second semiconductor element is pressure-bonded to the first semiconductor element via the film-like adhesive according to any one of claims 1 to 3, so that at least a part of the first wire is embedded in the film-like adhesive.
6. A method for manufacturing a semiconductor device includes the steps of:
a wire bonding step of electrically connecting the first semiconductor element to the substrate via the first wire;
a laminating step of attaching the film-like adhesive according to any one of claims 1 to 3 to one surface of the second semiconductor element; and
and a die bonding step of pressing the second semiconductor element to which the film-like adhesive is attached via the film-like adhesive to embed at least a part of the first lead in the film-like adhesive.
CN201880087615.9A 2018-01-30 2018-01-30 Film-like adhesive and method for producing same, and semiconductor device and method for producing same Pending CN111656499A (en)

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