WO2019117414A1 - Procédé de fabrication d'élément en aluminium ou en alliage d'aluminium anodisé ayant d'excellentes caractéristiques de résistance à la corrosion et d'isolation, et dispositif semi-conducteur traité en surface - Google Patents

Procédé de fabrication d'élément en aluminium ou en alliage d'aluminium anodisé ayant d'excellentes caractéristiques de résistance à la corrosion et d'isolation, et dispositif semi-conducteur traité en surface Download PDF

Info

Publication number
WO2019117414A1
WO2019117414A1 PCT/KR2018/008077 KR2018008077W WO2019117414A1 WO 2019117414 A1 WO2019117414 A1 WO 2019117414A1 KR 2018008077 W KR2018008077 W KR 2018008077W WO 2019117414 A1 WO2019117414 A1 WO 2019117414A1
Authority
WO
WIPO (PCT)
Prior art keywords
aluminum
corrosion resistance
semiconductor
coating
manufacturing apparatus
Prior art date
Application number
PCT/KR2018/008077
Other languages
English (en)
Korean (ko)
Inventor
유현철
정채종
고현철
Original Assignee
(주)코미코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)코미코 filed Critical (주)코미코
Priority to CN201880072917.9A priority Critical patent/CN111344836B/zh
Priority to US16/765,093 priority patent/US20200354850A1/en
Priority to SG11202003710SA priority patent/SG11202003710SA/en
Publication of WO2019117414A1 publication Critical patent/WO2019117414A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
    • C25D11/08—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing inorganic acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
    • C25D11/10—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing organic acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Definitions

  • the present invention relates to a method of forming an anodized film having excellent corrosion resistance and insulation characteristics on the surface of an aluminum or aluminum alloy member and an aluminum or aluminum alloy member formed with the anodized film produced by the method, And an inner member for a semiconductor or display manufacturing apparatus coated with an anodic oxide coating produced by the method.
  • Vacuum plasma equipment is widely used in the field of semiconductor devices or other ultrafine shape implementations.
  • Examples of using vacuum plasma equipment include plasma enhanced chemical vapor deposition (PECVD) equipment for forming a vapor deposition layer by chemical vapor deposition using plasma on a substrate, sputtering equipment for forming a vapor deposition layer by a physical method, And dry etching equipment for etching with a desired pattern.
  • PECVD plasma enhanced chemical vapor deposition
  • sputtering equipment for forming a vapor deposition layer by a physical method
  • dry etching equipment for etching with a desired pattern.
  • etching or ultrafine shape of a semiconductor device is realized by using a high-temperature plasma.
  • a high temperature plasma is generated inside the vacuum plasma apparatus, so that the chamber and the internal parts thereof are damaged, and specific elements and contaminating particles are generated from the surface of the chamber and its parts, and the inside of the chamber is likely to be contaminated.
  • a reaction gas used in a semiconductor manufacturing apparatus a corrosive gas including halogen elements such as Cl, F, Br, and O, N, H, S, C and the like is introduced, Corrosion resistance against the gases is required, and halogen plasma is also generated during the process of the semiconductor or liquid crystal manufacturing apparatus, so that plasma resistance is also required.
  • halogen elements such as Cl, F, Br, and O, N, H, S, C and the like
  • aluminum is mainly used as a material used for semiconductor equipment because of its conductivity, ease of manufacture, and availability at a reasonable price.
  • aluminum readily reacts with halogens such as chlorine, fluorine and bromine to produce AlCl 3 , Al 2 Cl 6 , AlF 3 or AlBr 3 .
  • the aluminum-fluorine compound may be peeled from the surface of the processing device component, causing corrosion of the component itself, and may serve as a source of fine particles of the processing chamber (and parts manufactured in the chamber).
  • a preferred means of protecting the aluminum surface in a semiconductor device is an anodic alumina coating process, which is an electrolytic oxidation process to form an integral coating of aluminum oxide, which is relatively porous on the aluminum surface.
  • anodic oxide film As a method for forming the anodic oxide film, a method of controlling the electrolyte at the time of forming the anodic oxide film at a low temperature or a method of electrolytically electrolyzing at a high current density is adopted.
  • a method of controlling the electrolyte at the time of forming the anodic oxide film at a low temperature or a method of electrolytically electrolyzing at a high current density is adopted.
  • Japanese Patent Publication No. 4660760 (Jan. 14, 2011) proposes a method of forming an anodic oxide film of high hardness by using an alcohol-added sulfuric acid-based electrolytic solution have.
  • the prior art has a problem in that the control of the concentration change of the alcohol in the electrolytic solution by the anodizing treatment becomes troublesome.
  • Korean Patent Registration No. 10-0664900 (April 04, 2007) proposes a method in which an anodic oxidation surface treatment is carried out using an electrolyte solution in which sulfuric acid is slightly added with sulfuric acid.
  • the prior art is anodizing treatment conditions for obtaining an oxide film thickness of 50 ⁇ to 60 ⁇ in a semiconductor manufacturing apparatus, in order to form a film having a desired thickness, a large amount of defects And corrosion resistance is deteriorated.
  • the main object of the present invention is to provide a method of manufacturing an anodized aluminum or aluminum alloy member and a surface-treated semiconductor device which are excellent in corrosion resistance and insulation properties against gases used in a semiconductor manufacturing process.
  • the present invention provides a method for forming an oxide film of an aluminum-containing member of a semiconductor or display manufacturing apparatus, the method comprising the steps of: a) mixing sulfuric acid, Lt; / RTI > And b) forming an anodic oxide coating on the surface of the aluminum or aluminum alloy member using the electrolyte solution prepared in the step a), wherein the anodic oxide coating is formed on the surface of the aluminum or aluminum alloy member .
  • the content of sulfuric acid, oxalic acid, and tartaric acid may be 9 to 11: 2.5 to 3.5: 0.3 to 0.7 in terms of weight ratio.
  • the concentration of the electrolytic solution may be 1 wt% to 10 wt%.
  • the applied current is 0.8 A / dm 2 To 1.7 A / dm < 2 >
  • the temperature of the electrolytic solution may be from 8 [deg.] C to 22 [deg.] C.
  • the anodized film thickness may be 50 [mu] m to 60 [mu] m.
  • the present invention provides an aluminum or aluminum alloy member of a semiconductor or display manufacturing apparatus manufactured by the method of forming an oxide film of a member including aluminum in the semiconductor or display manufacturing apparatus.
  • the present invention provides a member comprising aluminum of a semiconductor or display manufacturing apparatus coated with an anodic oxidation coating having a hardness of 370 Hv to 425 Hv and a withstand voltage of 1500 V to 2000 V, which may have corrosion resistance of 120 minutes or more.
  • the present invention can provide a member including aluminum of a semiconductor or display manufacturing apparatus coated with an anodic oxide coating having a hardness of 370 Hv to 425 Hv and a corrosion resistance of 120 minutes or more, as well as a member having an withstand voltage of 1500 V to 2000 V , And an aluminum-containing member of a semiconductor or display manufacturing apparatus coated with an anodic oxide coating having a corrosion resistance of 120 minutes or more.
  • the method of forming an anodic oxide coating having excellent corrosion resistance and insulation properties on the surface of aluminum or aluminum alloy member according to the present invention has an effect of forming a coating thickness of 50 ⁇ or more without defect in the anodic oxidation coating layer.
  • FIG. 1 is a sectional view showing a schematic structure in which an anodic oxidation coating is formed on the surface of an aluminum or aluminum alloy member.
  • Example 2 is an SEM image of Example 3 and Comparative Example 7, wherein (a) is an image obtained by measuring the cross-section of the oxide film of Comparative Example 7, and (b) is an image obtained by measuring the cross section of the oxide film of Example 3 .
  • the present invention relates to a method for producing an aluminum or aluminum alloy member of a semiconductor or display manufacturing apparatus, in which an anodic oxide coating is formed on the surface thereof, comprising the steps of: a) preparing an electrolytic solution by mixing sulfuric acid, And b) forming an anodic oxide coating on the surface of the aluminum or aluminum alloy member using the electrolyte prepared in the step a).
  • an electrolyte solution containing sulfuric acid, oxalic acid, and tartaric acid is used. This is compared with a conventional sulfuric acid bath using a mixed bath containing sulfuric acid, An anodic oxide film of 50 ⁇ ⁇ or more can be formed even if a low applied current is used. By using an applied current lower than that of the sulfuric acid bath, internal defects of the anodic oxide film are not generated and corrosion resistance can be increased.
  • a water bath using a mixed bath containing aqua regia, tartaric acid, organic matters, and the like has a high corrosion resistance by forming a film which does not cause defects in the anodic oxidation film by applying a low applied current. Resulting in low hardness and insulation properties.
  • a coating layer having a thickness of 50 ⁇ or more can be formed, which is superior in corrosion resistance, hardness, and insulation characteristics to the conventional anodic oxidation film formation method.
  • the aluminum or aluminum alloy member formed with the anodized coating according to the present invention forms an anodic oxide coating by mixing sulfuric acid, anhydrous acid, and tartaric acid at a predetermined ratio, so that a coating layer having a thickness of 50 ⁇ or more is formed using a low applied current
  • the corrosion resistance of the coating layer is improved to prolong the service life of the product, and since the insulation property is excellent, the occurrence rate of the arcing phenomenon of the semiconductor device or the display manufacturing apparatus connected to the high voltage power supply unit can be reduced.
  • the content of sulfuric acid, sulfuric acid, and tartaric acid may be 9 to 11: 2.5 to 3.5: 0.3 to 0.7 in the step a), and the concentration of the electrolyte may be 1 to 10 wt% .
  • the applied current is 0.8 A / dm 2
  • the electrolytic solution may be 8 °C to 22 °C.
  • the applied current is 0.8 A / dm 2
  • the hardness, withstand voltage and corrosion resistance of the coating layer are lowered, and when it exceeds 1.7 A / dm 2 , the withstand voltage and corrosion resistance of the coating layer may be lowered.
  • the withstand voltage and corrosion resistance of the coating layer may be deteriorated.
  • the thickness of the anodized film may be 50 ⁇ or more, more preferably 50 ⁇ to 60 ⁇ .
  • FIG. 1 is a sectional view showing a schematic structure in which an anodic oxidation coating is formed on the surface of an aluminum or aluminum alloy member.
  • the barrier layer 6 having no pores 3 is formed first.
  • the porous layer 5 having the pores 3 grows.
  • the uppermost porous layer interface 2 which is in contact with the electrolyte solution 1, And the growth structure of the pores 3 and the cells 7 of the porous layer 5 due to the growth and erosion in accordance with the composition of the electrolyte, the temperature, and the applied current in the barrier layer 6 and the barrier layer 6.
  • the present invention provides an aluminum or aluminum alloy member of a semiconductor or display manufacturing apparatus manufactured by a method of manufacturing an aluminum or aluminum alloy member of a semiconductor or display manufacturing apparatus in which the anodized film is formed on the surface thereof.
  • a member including aluminum of a semiconductor or display manufacturing apparatus coated with an anodized coating having a hardness of 370 Hv to 425 Hv and a withstand voltage of 1500 V to 2000 V The corrosion resistance of the member may be 120 minutes or more.
  • the anodic oxidation coating having a hardness of 370 Hv to 425 Hv and a corrosion resistance of 120 minutes or more can be coated on a member of a semiconductor or display manufacturing apparatus and can be coated with anodic oxidation having an withstand voltage of 1500 V to 2000 V and a corrosion resistance of 120 minutes or more
  • the coating may be coated on a member of a semiconductor or display manufacturing apparatus.
  • an anodized film is formed on the surface of the aluminum alloy according to the present invention.
  • the electrolyte solution (solvent: DI Water) having a concentration of 5 wt% in which the weight ratio of sulfuric acid (95% sulfuric acid), water (100%
  • Anodic oxidation treatment was carried out at 20 ° C and an applied current of 1 A / dm 2 to obtain an anodic oxide film.
  • aluminum was used as a positive electrode and lead was used as a negative electrode (-).
  • Example 2 The anodic oxidation coatings of Examples 2 to 8 were obtained in the same manner as in Example 1 except that the weight ratio of the electrolytic solution and the anodization treatment time were the same, Lt; / RTI >
  • the anodic oxidation coatings of Comparative Examples 1 to 8 were obtained in the same manner as in Example 1 except that the weight ratio of the electrolytic solution and the anodic oxidation treatment time were the same, Lt; / RTI >
  • the physical property analyzer was an external current type thickness gauge (Positector 6000, Defelsko), a Vickers hardness meter (HM 810-124K, Mitutoyo), and an electric strength meter (HIPOT TESTER 19052, Chroma).
  • a PVC pipe having a diameter of 2 mm was attached to a specimen using a sealant, diluted to 5 wt% with hydrochloric acid, and put into a 2 ml flask. The time of occurrence was measured.
  • Comparing Comparative Examples 1 to 8 it was found that when the sulfuric acid content was increased, the hardness was good, but the withstand voltage and corrosion resistance characteristics were deteriorated. When the sulfuric acid content was smaller than the weight ratio of the present invention, But it was confirmed that the withstand voltage and corrosion resistance characteristics were slightly lowered.
  • the weight ratio of sulfuric acid, water, and tartaric acid in the electrolytic solution for forming the anodic oxide coating is preferably 9 to 11: 2.5 to 3.5: 0.3 to 0.7, and the thickness of the coating layer of 50 ⁇ or more and the appropriate hardness, withstand voltage and corrosion resistance It is confirmed that an anodic oxide film having a high dielectric constant can be obtained.
  • Example 2 is an SEM image of Example 3 and Comparative Example 7, wherein (a) is an image obtained by measuring the cross-section of the oxide film of Comparative Example 7, and (b) is a cross section of the oxide film of Example 3 Image.
  • (a) shows the formation of an anodic oxide film under the same conditions as those of the conventional sulfuric acid method, and it was confirmed that a large number of defects were present. In (b), it was confirmed that there was almost no defect.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Conductive Materials (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Laminated Bodies (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Cookers (AREA)

Abstract

La présente invention porte sur un procédé de formation, sur la surface d'un élément en aluminium ou en alliage d'aluminium, d'un film anodisé ayant d'excellentes caractéristiques de résistance à la corrosion et d'isolation, et un élément en aluminium ou en alliage d'aluminium comportant un film anodisé fabriqué par le procédé et, plus spécifiquement, sur un procédé de formation d'un film anodisé de dureté élevée sans défauts internes dans une couche de revêtement anodisée et de formation d'un film anodisé ayant d'excellentes caractéristiques de résistance à la corrosion et d'isolation; et sur un semi-conducteur revêtu d'un film anodisé fabriqué par le même procédé, ou un élément interne pour un dispositif de fabrication d'affichage.
PCT/KR2018/008077 2017-12-11 2018-07-17 Procédé de fabrication d'élément en aluminium ou en alliage d'aluminium anodisé ayant d'excellentes caractéristiques de résistance à la corrosion et d'isolation, et dispositif semi-conducteur traité en surface WO2019117414A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201880072917.9A CN111344836B (zh) 2017-12-11 2018-07-17 耐腐蚀性及绝缘特性优秀的阳极氧化包含铝的构件及其的氧化膜形成方法
US16/765,093 US20200354850A1 (en) 2017-12-11 2018-07-17 Method for manufacturing anodized aluminum or aluminum alloy member having excellent corrosion resistance and insulation characteristics, and surface-treated semiconductor device
SG11202003710SA SG11202003710SA (en) 2017-12-11 2018-07-17 Method for manufacturing anodized aluminum or aluminum alloy member having excellent corrosion resistance and insulation characteristics, and surface-treated semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0169126 2017-12-11
KR1020170169126A KR102443973B1 (ko) 2017-12-11 2017-12-11 내부식성 및 절연특성이 우수한 양극산화된 알루미늄 또는 알루미늄 합금 부재의 제조방법 및 표면처리된 반도체 장치

Publications (1)

Publication Number Publication Date
WO2019117414A1 true WO2019117414A1 (fr) 2019-06-20

Family

ID=66820368

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/008077 WO2019117414A1 (fr) 2017-12-11 2018-07-17 Procédé de fabrication d'élément en aluminium ou en alliage d'aluminium anodisé ayant d'excellentes caractéristiques de résistance à la corrosion et d'isolation, et dispositif semi-conducteur traité en surface

Country Status (5)

Country Link
US (1) US20200354850A1 (fr)
KR (1) KR102443973B1 (fr)
SG (1) SG11202003710SA (fr)
TW (1) TWI772489B (fr)
WO (1) WO2019117414A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210100372A (ko) * 2020-02-06 2021-08-17 (주)포인트엔지니어링 양극산화막 구조체

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100820744B1 (ko) * 2007-09-05 2008-04-11 (주)제이스 금속 모재의 텅스텐 코팅방법
JP4796464B2 (ja) * 2005-11-17 2011-10-19 株式会社神戸製鋼所 耐食性に優れたアルミニウム合金部材
JP2013084954A (ja) * 2011-09-30 2013-05-09 Fujifilm Corp 発光装置
KR101592147B1 (ko) * 2015-08-19 2016-02-04 이대석 알루미늄 기판의 산화막 형성방법
JP5992208B2 (ja) * 2012-05-30 2016-09-14 富士フイルム株式会社 熱電変換素子の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081817A (ja) * 1983-10-13 1985-05-09 松下電器産業株式会社 アルミニウム電解コンデンサ用陽極箔の製造方法
JP4194143B2 (ja) * 1998-10-09 2008-12-10 株式会社神戸製鋼所 ガス耐食性とプラズマ耐食性に優れたアルミニウム合金材
KR100664900B1 (ko) 2004-07-15 2007-01-04 주식회사 코미코 내열균열성이 우수한 양극산화된 알루미늄 혹은 알루미늄 합금 부재의 제조방법과 알루미늄 혹은 알루미늄 합금 부재
JP4660760B2 (ja) 2005-06-02 2011-03-30 国立大学法人広島大学 アルミニウム又は／及びアルミニウム合金の陽極酸化皮膜の形成方法およびその方法により形成される陽極酸化皮膜
JP4824430B2 (ja) * 2006-02-28 2011-11-30 富士フイルム株式会社 ナノ構造体の製造方法
FR2922899B1 (fr) * 2007-10-26 2010-11-26 Univ Toulouse Procede de fabrication d'une structure poreuse ordonnee a partir d'un substrat d'aluminium
CN102330138B (zh) * 2011-09-14 2014-04-23 湖南大学 铝或铝合金双层阳极氧化膜的制备及其多色彩着色膜的制备
CN104520087B (zh) * 2012-08-06 2016-10-12 三菱丽阳株式会社 模具的制造方法和表面具有微细凹凸结构的成形体及其制造方法
KR20150092948A (ko) * 2014-02-06 2015-08-17 인 경 황 알루미늄 다이캐스팅 소재의 표면처리방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4796464B2 (ja) * 2005-11-17 2011-10-19 株式会社神戸製鋼所 耐食性に優れたアルミニウム合金部材
KR100820744B1 (ko) * 2007-09-05 2008-04-11 (주)제이스 금속 모재의 텅스텐 코팅방법
JP2013084954A (ja) * 2011-09-30 2013-05-09 Fujifilm Corp 発光装置
JP5992208B2 (ja) * 2012-05-30 2016-09-14 富士フイルム株式会社 熱電変換素子の製造方法
KR101592147B1 (ko) * 2015-08-19 2016-02-04 이대석 알루미늄 기판의 산화막 형성방법

Also Published As

Publication number Publication date
KR20190068893A (ko) 2019-06-19
TW201928125A (zh) 2019-07-16
SG11202003710SA (en) 2020-05-28
KR102443973B1 (ko) 2022-09-16
TWI772489B (zh) 2022-08-01
CN111344836A (zh) 2020-06-26
US20200354850A1 (en) 2020-11-12

Similar Documents

Publication Publication Date Title
US20120132532A1 (en) Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components
US5925228A (en) Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
JP2831488B2 (ja) アルミニウム基材に耐蝕性保護被膜を形成する方法
WO2011040679A1 (fr) Dispositif d'anodisation à champ de rayonnement de forte intensité
TWI248991B (en) Aluminum alloy member superior in corrosion resistance and plasma resistance
WO2018088642A1 (fr) Feuille de cuivre électrolytique pour batterie secondaire et son procédé de fabrication
KR20120021616A (ko) 금속 모재의 표면 처리 방법
CN86101886A (zh) 在非导体上制造金属结构
WO2019117414A1 (fr) Procédé de fabrication d'élément en aluminium ou en alliage d'aluminium anodisé ayant d'excellentes caractéristiques de résistance à la corrosion et d'isolation, et dispositif semi-conducteur traité en surface
WO2021029645A1 (fr) Procédé de fabrication d'un film d'aluminium anodisé ayant une structure de type piliers sur pores en utilisant de l'acide phosphorique
KR20140059153A (ko) 플라즈마 프로세싱 챔버의 팔라듐 도금된 알루미늄 컴포넌트 및 그의 제조 방법
WO2018128527A1 (fr) Réacteur à semiconducteur et procédé de formation d'une couche de revêtement sur un matériau de base métallique pour réacteur à semiconducteur
WO2011162431A1 (fr) Plaque de séparation pour pile à combustible et son procédé de fabrication
WO2018084448A2 (fr) Plaque mère, son procédé de fabrication, procédé de fabrication de masque, et procédé de dépôt de pixels oled
WO2018088646A1 (fr) Feuille de cuivre électrolytique pour batterie secondaire et son procédé de fabrication
WO2018088643A1 (fr) Feuille de cuivre électrolytique pour batterie secondaire et son procédé de production
WO2017171282A1 (fr) Pièces métalliques et leur procédé de fabrication, et chambre de traitement pourvue de pièces métalliques
KR100664900B1 (ko) 내열균열성이 우수한 양극산화된 알루미늄 혹은 알루미늄 합금 부재의 제조방법과 알루미늄 혹은 알루미늄 합금 부재
KR102468324B1 (ko) 알루미늄이 포함된 부재의 산화피막 형성방법 및 이에 의해 형성된 반도체 제조 장치의 알루미늄이 포함된 부재
WO2012053774A2 (fr) Procédé de mise en œuvre d'un traitement antistatique sur la surface d'un étage de travail, et étage de travail traité par ledit procédé
CN111344836B (zh) 耐腐蚀性及绝缘特性优秀的阳极氧化包含铝的构件及其的氧化膜形成方法
KR102403216B1 (ko) 양극산화층 보호용 코팅 조성물 및 이를 이용한 반도체 제조 장비의 부품
KR20220062697A (ko) 내부식성 및 절연특성이 우수한 알루미늄 합금 부재의 제조방법 및 표면처리된 반도체 장치
JP5452034B2 (ja) 半導体製造装置用表面処理部材、および、その製造方法
TWI761907B (zh) 用於等離子體處理裝置的零部件及其封孔方法、等離子體處理裝置及其工作方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18888040

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18888040

Country of ref document: EP

Kind code of ref document: A1