WO2019084710A1 - 一种多级mems光开关单元和光交叉装置 - Google Patents
一种多级mems光开关单元和光交叉装置 Download PDFInfo
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- WO2019084710A1 WO2019084710A1 PCT/CN2017/108273 CN2017108273W WO2019084710A1 WO 2019084710 A1 WO2019084710 A1 WO 2019084710A1 CN 2017108273 W CN2017108273 W CN 2017108273W WO 2019084710 A1 WO2019084710 A1 WO 2019084710A1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
- G02B6/3584—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/351—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements
- G02B6/3512—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements the optical element being reflective, e.g. mirror
- G02B6/3518—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements the optical element being reflective, e.g. mirror the reflective optical element being an intrinsic part of a MEMS device, i.e. fabricated together with the MEMS device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
- G02B6/3568—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details characterised by the actuating force
- G02B6/357—Electrostatic force
Definitions
- the embodiments of the present application relate to the field of optical communications, and in particular, to a micro-electro-mechanical system (MEMS) optical switch unit and an optical cross-device.
- MEMS micro-electro-mechanical system
- Optical Cross-connect integrates transmission and switching. It has large transmission capacity, flexible networking, scalable and reconfigurable network, easy upgrade, and transparent transmission of different speed levels in various formats.
- the signal can meet the many advantages of the user signal type and the growing demand of the service type, and is an important node device that constitutes an Optical Transport Network (OTN).
- OTN Optical Transport Network
- OXC optical Integrated Circuit
- mechanical optical switches there are mechanical optical switches, polymer switches, semiconductor optical switches, Planar Lightwave Circuits (PLCs) and MEMS in optical switches.
- PLCs Planar Lightwave Circuits
- MEMS optical switches technology is developing rapidly.
- OXC optical switches are developing in the direction of low loss, high isolation, flexible dynamics, low power consumption, small size and low cost.
- the OXC optical switch matrix is fabricated by using a micro-motion micro-mirror, and the micro-motion micro-mirror can adopt the up-and-down folding mode, the left-right movement mode or the rotation mode to realize the on/off function of the optical switch.
- the optical switch made by MEMS technology integrates mechanical structure, micro-actuator and micro-mirror on the same substrate, and is compact, lightweight and easy to expand.
- MEMS optical switches may include two-dimensional (2 Dimensional, 2D) and three-dimensional (3 Dimensional, 3D) MEMS optical switches. Among them, the 2D MEMS optical switch is a digital structure, and the 3D MEMS optical switch is an analog structure.
- a 2D MEMS optical switch In a 2D MEMS optical switch, all of the micromirrors and the input and output fibers are on the same plane, and the micromirrors are upright and inverted by electrostatic actuators or the micromirrors are placed in the optical path in a "warp” manner.
- the function of the pop-up optical path is to realize the functions of "on” and "off", so the 2D structure is also called digital type.
- N ⁇ N 2D optical switch requires N 2 micro mirrors.
- the advantage of the 2D structure is that the control is simple.
- the disadvantage is that the number of switching ports cannot be made large due to the limitation of the optical path and the area of the micro mirror.
- all the micromirrors are on opposite planes, and the switching of the optical paths is achieved by changing the different positions of each micromirror.
- An N ⁇ N 3D optical switch requires only 2N micromirrors, but each micromirror requires at least N precisely controllable movable positions, so the 3D structure is also called analog. Contrary to the 2D structure, the advantage of the 3D structure is that the number of switch ports can be made large, and the exchange capacity of thousands of ports can be realized.
- the 3D MEMS structure is mainly applied, and the 3D MEMS is a state in which the simulated micromirror is switched to a floating state, and there is a problem that the switching oscillation time is long and the switching speed is slow, for example, switching of the 3D analog MEMS.
- the micromirror is controlled to deflect to the design position, the micromirror is finally suspended, so the micromirror needs a certain time of oscillation to reach a stable state.
- the oscillation time of the micromirror is generally greater than 10 milliseconds (millisecond, ms), limited by the oscillation time of the micromirror, and the switching speed of the micromirror is generally on the order of 10 ms or 100 ms.
- the speed limit is limited by the switching speed of the MEMS.
- the MEMS structure provided by the prior art is an analog MEMS, and the control mechanism and the driving structure are quite complicated.
- the working mode is analog, so the control circuit needs to accurately control the voltage applied to the electrode to control the micro mirror.
- the deflection state, the control part is complicated, and the cost is high.
- the embodiment of the present application provides a multi-level MEMS optical switch unit and an optical crossover device, which can implement a multi-level digital optical switching engine, and simplify the deflection state control of the micro control mirror.
- the embodiment of the present application provides a multi-level MEMS optical switch unit, including: a micro mirror, a substrate, a cantilever beam, N electrodes, and M blockers, wherein the N and M are greater than or equal to 2.
- the micromirror is movably connected to the substrate by the cantilever beam; the cantilever beam is configured to cause the micromirror when no force is generated by the N electrodes Maintaining an initial state; causing the micromirror to be in a target deflection state when at least one of the N electrodes generates a force; and returning the micromirror to an initial state when the force is zero;
- a cavity space is formed between the micromirror and the substrate, and the N electrodes and the M stoppers are disposed in the cavity space, the N electrodes and the M stoppers Fixed to the substrate; at least one of the N electrodes for generating a force to control the micromirror to enter a deflected state; the micromirror for at least one of the N electrodes An electrode enters a deflected state under the force of the electrode;
- Said M is at least one stopper is a stopper for blocking the micro mirror, so that the micro mirror to the target yaw stopped state.
- the multi-level MEMS optical switch unit may include: a micro mirror, a base, a cantilever beam, N electrodes, and M stoppers, and the micro mirror is connected to the base through the cantilever beam; the cantilever beam,
- the micromirror is kept in an initial state when no force is generated on the N electrodes; the micromirror is in a target deflection state when the force generated by the electrode; and the micromirror is restored to an initial state when the force is zero
- a cavity space is formed between the micro mirror and the substrate, N electrodes and M stoppers are disposed in the cavity space, N electrodes and M stoppers are fixed on the substrate; electrodes are used for generating force and controlling
- the micromirror enters a deflected state; a micromirror for entering a deflected state under the force of the electrode; and a stopper for blocking the micromirror to stop the micromirror to a target deflected state.
- the force can be generated by the multiple electrodes to control the micro-mirror in the target deflection state. Therefore, the embodiment of the present application can implement a multi-level digital optical switching engine, and the multi-level MEMS optical switch unit structure has many The blocker shortens the oscillation time when the micromirror is switched, and has a high-speed switching speed. As a digital chip, the switching speed is much faster than that of the analog MEMS chip, and the control circuit of the digital chip is simpler, and the system debugging and assembly is more convenient. Since the multi-level MEMS optical switch unit has a plurality of control electrodes and blocking columns, the micro-mirrors have a plurality of deflection states, and the OXC of the large ports is easily realized.
- the cantilever beam is specifically configured to maintain the micromirror in an initial state when no voltage is applied to the N electrodes; at least the N electrodes When an electrode generates an electrostatic force, the micromirror is in a target deflection state; when the electrostatic force is zero, the micromirror is restored to an initial state; at least one of the N electrodes is specifically used An electrostatic force is generated on the micromirror after application of a voltage. At least one of the N electrodes in the embodiment of the present application can apply a voltage to generate an electrostatic force to the micromirror, and the micromirror can be deflected by the electrostatic force.
- the multi-level MEMS optical switch unit further includes: N silicon pass a hole and electrode control circuit, wherein the N electrodes are respectively connected to the electrode control circuit through the N through silicon vias; the electrode control circuit is configured to control at least one of the N electrodes Produce force.
- the electrode can be connected to the solder joint on the other side of the substrate through the through silicon via, and the electrode control circuit is connected to the electrode through the solder joint, and the electrode control circuit can control the voltage on the N electrodes through the through silicon via.
- the N and the M are equal, and the N electrodes are in one-to-one correspondence with the M stoppers; the N electrodes are evenly distributed on the substrate And the M blockers are evenly distributed on the substrate; when the i-th electrode generates a force, the i-th blocker provides a barrier to the micro-mirror, so that the micro-mirror stops at the target deflection state
- the i is a positive integer less than or equal to the N.
- the number M of the blockers may be equal to the number N of the electrodes. For example, each blocker may be correspondingly provided with a blocker.
- an i-th blocker may be disposed around the i-th electrode, and the i-th blocker may be used for The blocking of the micromirror when the i-th electrode generates an electrostatic force shortens the oscillation time when the micromirror is switched.
- the processing difficulty of the multi-level MEMS optical switch unit can be simplified by the one-to-one correspondence relationship between the electrodes and the stopper.
- the N electrodes are evenly distributed around a central position of the circular structure, and two adjacent ones of the N electrodes The angle between them is equal to 360 ° / N.
- the angle between two adjacent ones of the N electrodes is equal to 360°/N, and the electrodes are evenly distributed around the center of the circular structure, thereby facilitating the direction of action of the electrostatic force of the control electrode on the micromirror.
- the micromirror comprises: a circular reflective lens.
- the number of the cantilever beams is K, the K is a positive integer, and the K is smaller than the N; the M is greater than the N.
- the number of cantilever beams needs to take into account the number of deflection directions of the micromirrors and the switching speed and accuracy requirements. It will be appreciated that if M is greater than N, the micromirror deflection can be blocked simultaneously by at least two blockers.
- an embodiment of the present application provides an optical crossover device, the optical crossover device comprising: a multi-level MEMS switch array, the multi-level MEMS switch array comprising: any one of the foregoing first aspects Multi-level MEMS optical switch unit.
- the force can be generated by the multiple electrodes to control the micro-mirror in the target deflection state. Therefore, the embodiment of the present application can implement a multi-level digital optical switching engine, and the multi-level MEMS optical switch unit structure has many The blocker shortens the oscillation time when the micromirror is switched, and has a high-speed switching speed.
- the switching speed is much faster than that of the analog MEMS chip, and the control circuit of the digital chip is simpler, and the system debugging and assembly is more convenient. Since the multi-level MEMS optical switch unit has a plurality of control electrodes and blocking columns, the micro-mirrors have a plurality of deflection states, and the OXC of the large ports is easily realized.
- the multi-level MEMS switch array is specifically a first multi-level MEMS switch array, or a second multi-stage MEMS switch array;
- the optical crossover device further includes: an input fiber An array, an input collimator array, a lens, an output collimator array, and an output fiber array, wherein the input fiber array is for beam coupled input; the input collimator array is for The light beam outputted from the input end fiber array is collimated;
- the first multi-level MEMS switch array includes S first multi-level MEMS optical switch units, and the first multi-stage MEMS optical switch unit is as described above
- the first multi-level MEMS switch array is configured to map a light beam output by the input collimator array through the lens To the second multi-level MEMS switch array;
- the second multi-level MEMS switch array includes T second multi-level MEMS optical switch units, and the second multi-stage MEMS optical switch unit is as in
- the input end fiber array includes: S input ports, and each input port position layout has a one-to-one correspondence with a mapping position of the first multi-stage MEMS optical switch unit;
- the output end fiber array includes: T output ports, wherein each output port position layout has a one-to-one correspondence with a mapping position of the second multi-stage MEMS optical switch unit; each of the first multi-level MEMS light
- the switching unit can switch the beam to the T directions, the arrangement manner of the first multi-stage MEMS optical switch unit is determined by the switching direction and the switching angle of the second multi-stage MEMS optical switching unit, and the focal length of the lens;
- the second multi-stage MEMS optical switch unit can switch the beam to the S directions, and the arrangement manner of the second multi-stage MEMS optical switch unit passes the switching direction and the switching angle of the first multi-stage MEMS optical switch unit, and The lens focal length is determined.
- the S is equal to the T.
- the number of input ports and output ports in the input fiber array is equal, and the number of the first multi-stage MEMS optical switch units included in the first multi-stage MEMS switch array is also equal to the second number included in the second multi-stage MEMS switch array.
- the arrangement of the multi-level MEMS optical switch unit on the multi-level MEMS switch array is annular.
- the N multi-level MEMS optical switch units on the multi-level MEMS switch array are annularly distributed, and the N multi-level MEMS optical switch units share N micro-mirrors.
- the beam switching adopts a linear switching path or a broken line switching path. Or arc to switch paths.
- the switching speed of the optical signal can be improved by different switching switching adopted by the multi-level MEMS switch array.
- the fold line switching path comprises: a two-step linear switching path, the two-step linear switching path passing through a center point position of the multi-stage MEMS switch array.
- the multi-level MEMS switch array adopts a folding line switching path through the center point position, and the optical signal switching can be completed by two-step linear switching. Compared with the prior art, the number of optical switching paths is reduced, and the efficiency of optical path switching can be improved.
- FIG. 1 is a schematic top plan view of a multi-level MEMS optical switch unit according to an embodiment of the present application
- FIG. 2 is a schematic side view showing the structure of a multi-level MEMS optical switch unit according to an embodiment of the present application
- FIG. 3 is a schematic diagram of an electrode blocked by a stopper according to an embodiment of the present application.
- FIG. 4 is a schematic structural diagram of a structure of an optical cross device according to an embodiment of the present application.
- FIG. 5 is a schematic structural diagram of another structure of an optical cross device according to an embodiment of the present disclosure.
- FIG. 6 is a schematic diagram of a layout manner of a multi-level MEMS optical switch unit in an optical cross device according to an embodiment of the present disclosure
- FIG. 7 is a schematic diagram of another layout manner of a multi-level MEMS optical switch unit in an optical cross device according to an embodiment of the present disclosure.
- FIG. 8 is a schematic diagram of a beam switching path in an optical cross device according to an embodiment of the present application.
- FIG. 9 is a schematic diagram of another beam switching path in an optical cross device according to an embodiment of the present application.
- FIG. 10 is a schematic diagram of another beam switching path in an optical cross device according to an embodiment of the present application.
- the embodiment of the present application provides a multi-level MEMS optical switch unit and an optical crossover device, which can implement a multi-level digital optical switching engine, and simplify the deflection state control of the micro control mirror.
- the multi-level MEMS optical switch unit provided by an embodiment of the present application may include: a micro mirror 101, a substrate 102, a cantilever beam 103, N electrodes 104 (eg, 1041-104N), and M. a blocker 105 (for example, 1051-150M), N and M are positive integers greater than or equal to 2, wherein
- the micro mirror 101 is movably connected to the substrate 102 through the cantilever beam 103;
- the cantilever beam 103 is configured to maintain the micromirror 101 in an initial state when no force is generated by the N electrodes 104; and to cause the micromirror 101 to be in a target deflection state when the force generated by at least one of the N electrodes 104 is generated. When the force is zero, the micro mirror 101 is restored to an initial state;
- a cavity space is formed between the micro mirror 101 and the substrate 102, and N electrodes 104 and M stoppers 105 are disposed in the cavity space, and N electrodes 104 and M stoppers 105 are fixed on the substrate;
- At least one of the N electrodes 104 for generating a force to control the micromirror 101 to enter a deflected state
- micromirror 101 for entering a deflected state under the force of at least one of the N electrodes 104;
- At least one of the M blockers 105 blocks the micromirror 101 such that the micromirror stops to a target deflection state.
- the movable connection established by the micro mirror 101 and the substrate 102 may also be referred to as a movable connection, that is, the micro mirror 101 and the cantilever beam 103 are connected, the cantilever beam 103 has ductility, and the cantilever beam 103 and the substrate 102 are connected. connection.
- one of the N electrodes 104 may generate a force, or two or more adjacent electrodes may simultaneously generate a force, and the micro mirror 101 may be at one electrode. Or the force of a plurality of electrodes enters a deflected state.
- the cantilever beam 103 is configured to maintain the micromirror 101 in an initial state when no voltage is applied to the N electrodes 104; when at least one of the N electrodes 104 generates an electrostatic force, The micro mirror 101 is in a target deflection state; when the electrostatic force is zero, the micro mirror 101 is restored to an initial state;
- At least one of the N electrodes 104 is used to generate an electrostatic force to the micromirror 101 after a voltage is applied.
- the micromirror 101 is used to enter a deflected state under the action of an electrostatic force.
- both the electrode and the stopper are disposed in a cavity space formed by the micro mirror and the substrate, and the deflection of the micro mirror can be controlled by an electrostatic force generated by at least one of the N electrodes, M
- At least one of the blockers may be configured to block the deflection of the mirror such that the micro mirror stops to a target deflection state
- the number M of the blockers may be equal to the number N of electrodes, or the number M of the blockers is greater than
- the number of electrodes N is not limited here.
- the force generated by the electrode may specifically be an electrostatic force, and the deflection of the micro mirror is controlled by the electrostatic force, and the electrode may also control the deflection of the micro mirror by a thermal driving method, such as an electrode.
- Thermal energy is generated by application of current, and the cantilever beam is driven by thermal energy to generate torque, and the deflection of the micromirror is controlled by the torque.
- the large port OXC uses a 3D analog MEMS chip as an optical switching engine, and the port switching speed is limited by the switching speed of the micro mirror, which makes it difficult to increase the switching speed of the OXC.
- the electrostatic force is generated by the multi-electrode to control the micro-mirror in the target deflection state. Therefore, the embodiment of the present application can implement a multi-level digital optical switching engine, and the multi-level MEMS optical switch unit has multiple blocking structures.
- the device also referred to as a blocking column
- the barrier and the blocking column are not distinguished, so that the oscillation time when the micro mirror is switched is shortened, and the switching speed is high, and the multi-level MEMS optical switching unit is used as the digital chip.
- the switching speed is much faster than the analog MEMS chip, and the control circuit of the digital chip is simpler, and the system debugging and assembly is more convenient;
- the multi-level MEMS optical switch unit has multiple control electrodes and a plurality of blocking columns, so that there are many micro-mirrors A deflection state makes it easy to implement OXC for large ports.
- the OXC based on the multi-level MEMS optical switch unit has the advantages of fast switching speed, low loss, uncorrelated polarization and large number of ports.
- the polarization uncorrelated is light for any polarization state, and the multi-level MEMS optical switch unit can perform optical transmission. deal with.
- the substrate 102 and one end surface of the cantilever beam 103 are connected;
- the micromirror 101 is connected to the other end surface of the cantilever beam 103, and the two end faces of the cantilever beam 103 are symmetrically arranged.
- the substrate 102 can provide a movable supporting force of the cantilever beam 103, so that the micro mirror 101 can be movably connected to the substrate 102 through the cantilever beam 103.
- N and M are equal, and the N electrodes are in one-to-one correspondence with the M stoppers;
- N electrodes are evenly distributed on the substrate, and M stoppers are evenly distributed on the substrate;
- the i-th blocker When the i-th electrode generates a force, the i-th blocker provides a barrier to the micro-mirror such that the micro-mirror stops at a particular deflection state, i being a positive integer less than or equal to N.
- the number M of the blockers may be equal to the number N of the electrodes.
- each blocker may be correspondingly provided with a blocker.
- an i-th blocker may be disposed around the i-th electrode, and the i-th blocker is available.
- the blocking of the micromirror when the electrostatic force is generated by the i-th electrode shortens the oscillation time when the micromirror is switched.
- the processing difficulty of the multi-level MEMS optical switch unit can be simplified by the one-to-one correspondence relationship between the electrodes and the stopper.
- the N electrodes are evenly distributed around the center of the circular structure, and the angle between adjacent two of the N electrodes is equal to 360°/N.
- the angle between two adjacent ones of the N electrodes is equal to 360°/N, and the electrodes are evenly distributed around the center of the circular structure, thereby facilitating the electrostatic force of the control electrode on the micromirror. direction.
- the multi-level MEMS optical switch unit further includes: N through silicon vias 107 and an electrode control circuit, wherein
- N electrodes are respectively connected to the electrode control circuit through N through silicon vias 107;
- An electrode control circuit for controlling at least one of the N electrodes to generate a force.
- the electrode control circuit is not illustrated, and the electrode may be connected to the solder joint 106 on the other side of the substrate through the through silicon via, and the electrode control circuit is connected to the electrode 104 through the solder joint 106, and the electrode control circuit
- the voltage across the N electrodes can be controlled through through silicon vias.
- the micromirror comprises: a circular reflective lens.
- the micro-mirror may include a circular reflective lens.
- the reflective lens included in the micro-mirror in the embodiment of the present application may be flexibly configured in an actual scene, which is not limited herein.
- the micromirror is capable of reflecting the light beam incident on its surface by selecting a suitable reflective film 108 on the mirror.
- the number of cantilever beams is K, K is a positive integer, and K is less than N; M is greater than N.
- the number of cantilever beams needs to comprehensively consider the number of deflection directions of the micromirrors, the switching speed, and the accuracy requirements. It can be understood that if M is greater than N, the deflection of the micromirror can be blocked by at least two blockers at the same time.
- a structure including a micro mirror, K cantilever beams, N electrodes, M stoppers, etc. can realize N directions of the light beam, and at least one state deflection in each direction Switch.
- the micromirror is used to reflect the light beam incident on the mirror surface and is connected to the substrate by K cantilever beams.
- the number of K is a positive integer greater than 4 and less than N.
- the cantilever beam can connect the micromirror to the substrate in a suspended manner, and has a flexible cantilever beam so that the micromirror can generate N direction deflections upon power-on.
- the N electrodes are distributed under the micromirrors, and the micromirrors cause N directions to be tilted by power-on.
- the M blockers are distributed under the micro mirror, which determines the final tilt angle and switching speed after the micro mirror is powered.
- Figure 1 shows a single multi-level MEMS optical switch unit, also called a single multi-level digital MEMS lens, for the entire multi-level digital MEMS lens.
- the structure may include: a mirror 101, a substrate 102, k cantilever beams 103, N electrodes 104, and M stoppers 105.
- the entire multi-stage digital MEMS lens may further include: a solder 106, a through silicon via 107, and a reflective film 108.
- the mirror has N working states, and the state switching time is less than 1 ms. Therefore, the state switching time of the multi-level MEMS optical switch unit provided by the embodiment of the present application is much smaller than that of the existing one.
- the switching time of the technology's continuously adjustable MEMS lens structure (approximately 100ms).
- the micromirror structure comprises a circular reflecting mirror, and by selecting a suitable reflecting film on the mirror surface, the micromirror can reflect the light beam incident on the surface thereof. As shown in FIG. 1 and FIG.
- k cantilever beams are mirror-connected to a substrate, and the lens is spaced apart from the substrate directly below to form a cavity space, which may also be referred to as a space, and the electrodes are not added.
- the k cantilever beams make the mirror surface stationary parallel to the XY plane.
- the k cantilever beams have a certain ductility, and the mirror surface can move under the force of the force.
- the number k of the cantilever beam is greater than 4, less than the number N of the electrodes, and N is the number of rotation directions of the micromirrors.
- the number of specific electrodes should take into account the number of deflection directions of the lens, the switching speed, and the accuracy requirement.
- N electrodes are evenly distributed under the lens and on the surface of the substrate, and the angle between each electrode is 360°/N, and 360° means 360 degrees around the circumference.
- the electrode When the electrode is applied with voltage, it will generate an electrostatic force on the mirror surface directly above, giving the lens an electrostatic force extending downward in the Z direction. After the lens is pressed, the tilt will be generated in the Z-axis direction, and the N electrodes pass through the through-silicon via technology and the substrate.
- the solder joints are connected on one side, and the electrode control circuit is connected to the electrodes in the micromirror structure through these solder joints, and the electrostatic direction of the mirror is controlled by controlling the energization of different electrodes to control the tilt direction of the lens.
- the direction of the reflected beam also changes accordingly.
- M blocking columns are evenly distributed at the lower end of the lens, as shown in the figure As shown in Fig. 2, when an electrode is energized, the lens is tilted by the electrostatic force in the direction of the electrode, and the lens stops tilting after hitting the blocking column.
- the mirror state at this time is the corresponding lens state when the electrode is powered.
- the blocking column determines the tilt state of the lens
- the M blocking columns determine the total number of N deflection directions of the mirror.
- the height of the blocking column and the distance from the center position determine the angle of tilt when the mirror is deflected.
- the presence of the blocking column greatly reduces the damping motion time when the lens moves to the final state, increasing the switching speed between the micromirror states.
- the digitized micromirror shown in FIG. 1 controls the deflection state of the micromirror by controlling the energization state of the electrode under the micromirror structure, thereby controlling the reflection direction of the beam incident on the micromirror, and the reflected beam can be deflected in N directions. Each direction can be deflected by a predetermined angle, and a total of N reflection states can be provided for the same incident beam.
- the structure of the multi-level MEMS optical switch unit is exemplified in the foregoing application embodiment, and a new optical path design is performed for the relevant characteristics of the multi-level MEMS optical switch unit, so that it can be applied in the OXC module.
- a multi-stage MEMS optical switch unit can generate multiple deflection states, and the requirements for strict incident delivery requirements are specially designed.
- an OXC device based on a multi-level digital MEMS chip-based optical switching engine is formed that is different from the conventional MEMS-based OXC module.
- the optical crossover device provided by the embodiment of the present application is schematically illustrated.
- the optical crossover device includes: a MEMS switch array, and the multi-level MEMS switch array may include: the multi-level MEMS optical switch unit as in the foregoing FIG. 1 to FIG.
- the multi-level MEMS switch array is specifically a first multi-level MEMS switch array, or a second multi-level MEMS switch array;
- the optical crossover device provided by the embodiment of the present application further includes: an input end fiber array, an input end collimator array, a lens, an output collimator array, and an output end fiber array, wherein
- Input fiber array for beam coupled input
- An input collimator array for collimating the beam output from the input fiber array
- the first multi-level MEMS switch array includes S first multi-level MEMS optical switch units, and the first multi-stage MEMS optical switch unit is the multi-stage MEMS optical switch unit shown in FIG. 1 and FIG. 2, and S is a positive integer; a first multi-level MEMS switch array for mapping a beam outputted by the input collimator array through a lens to a second multi-level MEMS switch array;
- a second multi-level MEMS switch array comprising T second multi-stage MEMS optical switch units, a second multi-stage MEMS optical switch unit such as the multi-stage MEMS optical switch unit shown in FIG. 1 and FIG. 2, T being a positive integer; a second multi-level MEMS switch array for outputting a beam from the first multi-stage MEMS optical switch array to an output collimator array;
- Output fiber array for beam coupled output is
- the first multi-level MEMS switch array includes a plurality of first multi-level MEMS optical switch units, which is abbreviated as MEMS1 in FIG. 4, and the first multi-level MEMS optical switch unit in FIG. It may also be referred to as a “first multi-level digital MEMS optical switch”.
- the second multi-level MEMS switch array includes a plurality of second multi-level MEMS optical switch units, which is abbreviated as MEMS 2 in FIG.
- the second multi-level MEMS optical switch unit may also be referred to as a "second multi-stage digital MEMS optical switch.”
- the input fiber array includes: S input ports, and each input port position layout has a one-to-one correspondence with a mapping position of the first multi-level MEMS optical switch unit;
- the output end fiber array includes: T output ports, wherein each output port position layout has a one-to-one correspondence with a mapping position of the second multi-stage MEMS optical switch unit;
- Each first multi-level MEMS optical switch unit can switch beams to T directions, and the arrangement manner of the first multi-stage MEMS optical switch unit is determined by the switching direction and switching angle of the second multi-stage MEMS optical switch unit, and the focal length of the lens ;
- Each of the second multi-stage MEMS optical switch units can switch the beam to the S directions, and the arrangement manner of the second multi-stage MEMS optical switch unit is determined by the switching direction and the switching angle of the first multi-stage MEMS optical switch unit, and the focal length of the lens .
- the input fiber array and the input collimator array collimate S (positive integer) input beams, and map the beam waist position to the first multi-level MEMS switch array.
- the first multi-level MEMS switch array may include S first multi-level MEMS optical switch units (referred to as switch units for short), each switch unit may switch the light beams to T (positive integer) directions, and each direction can switch at least one The angle of the setting; the arrangement of the S switching units is determined by the switching direction and the switching angle of the switching units in the second multi-stage MEMS switch array.
- the arrangement direction of the S switch units is in one-to-one correspondence with the switching direction of the second multi-stage MEMS switch array.
- the first multi-level MEMS switch array and the second multi-level MEMS switch array are respectively located at the front and rear focal planes of the lens, and map the beam waist on the first multi-stage MEMS switch array to the second multi-level MEMS switch array to realize spot change Having any micromirrors on the first multi-level MEMS switch array deflect the same direction and angle, the light beams being mapped to the same location on the second multi-level MEMS switch array, for example to the same location on the second multi-level MEMS switch array Switch unit.
- the second multi-level MEMS switch array comprises T second multi-level MEMS optical switch units (referred to as switch units for short); each switch unit can switch the light beams to S (positive integer) directions, and each direction can switch at least one set
- the angle of arrangement of the T switching units is determined by the switching direction and switching angle of the switching units in the first multi-stage MEMS switch array.
- the arrangement direction of the T switch units is in one-to-one correspondence with the switching direction of the first multi-stage MEMS switch array.
- the output fiber array and the output collimator array collimate T (positive integer) output beams, receive T beams from the second multi-stage MEMS switch array, and couple them out.
- S is equal to T. That is, the number of input ports and output ports in the input fiber array is equal, and the number of the first multi-stage MEMS optical switch unit included in the first multi-stage MEMS switch array is also equal to the second included in the second multi-stage MEMS switch array. Multi-level MEMS optical switch unit. Unlimited, the number of input ports can also be different from the number of output ports.
- the arrangement of the multi-level MEMS optical switch units on the multi-level MEMS switch array is annular.
- the N multi-level MEMS optical switch units on the multi-level MEMS switch array are annularly distributed, and the N multi-level MEMS optical switch units share N micro-mirrors.
- the beam switching adopts a linear switching path, or a polygonal line switching path or an arc Shape switching path.
- the beam switching of the multi-level MEMS optical switch unit may take multiple paths, for example, a linear switching path, a polygonal line switching path, or an arc switching path may be adopted. As shown in Figure 8 to Figure 10, respectively.
- the fold line switching path includes: a two-step linear switching path, and the two-step linear switching path passes through a center point position of the multi-level MEMS switch array.
- FIG. 7 to FIG. 10 illustrate a non-destructive switching manner of the multi-level MEMS optical switch unit in the embodiment of the present invention.
- FIG. 7 one circle represents a switch unit.
- Figure 8 shows the line switching road
- the path shows a broken line switching path
- FIG. 10 shows an arc switching path.
- the OXC switch needs to switch according to a specific path in order to avoid the influence of the switching beam on the communication port. Switching from an existing port to a target port typically requires 3-5 switching procedures.
- the switching speed of the OXC switch in the embodiment of the present application is generally 3-5 times of the switching speed of the switching unit.
- the OXC switching speed is shortened to be equal to the switching speed of the switching unit.
- the embodiment of the present application further provides a fast lossless switching mode, which is sensitive to crosstalk requirements and non-destructive switching between adjacent ports.
- the multi-level MEMS switch array employs the annular layout of the previous embodiment.
- the switch can be switched from the switch port to the switch array center point and then to the target port.
- the switching speed of the OXC switch is twice the switching speed of the switching unit.
- an arc switching path can also be employed to avoid switching crosstalk between several ports at the same time.
- the switching speed of the OXC switch is increased by less than 2 times the switching speed of the switching unit.
- the embodiment of the present application further provides an OXC switch unit arrangement layout manner and a lossless switching manner.
- the OXC switch unit is arranged in the above-mentioned installation ring or near-ring arrangement, and adopts a pre-switched port to the target port, and the two-step or one-step direct switching mode is adopted, thereby improving the efficiency of the optical path switching.
- the embodiment of the present application provides a digital multi-level MEMS optical switch unit, which has both fast and multi-state characteristics.
- the embodiment of the present application further provides a fast optical switch device.
- the state, high-speed switching unit can realize a high-speed OXC switching device capable of large port number;
- the present application proposes a fast lossless optical switch, a switch array layout and a switching mode, which can further improve the switching speed of the existing OXC switching device;
- the multi-state switch unit, the fast optical switch device and the fast non-destructive switching mode can overcome the dilemma of the existing OXC port number and the switching speed, and realize the large port high speed OXC, which is very helpful for improving the existing network and the cluster optical switching efficiency. .
- an optical crossover device implemented based on a multi-level MEMS optical switch unit is illustrated. As shown in FIG. 4 and FIG. 5, it is an SxS optical cross device, which includes: an input fiber array, and an input terminal collimation.
- Array first multi-level MEMS switch array (also known as first-stage digital MEMS switch array), lens, second multi-level MEMS switch array (also known as second-stage digital MEMS switch array), output terminal Straight array and output fiber array.
- the input end fiber array is used for beam coupling input, and includes S input ports, and each port position layout has a one-to-one correspondence with a mapping position of the first multi-stage MEMS switch array;
- the input collimator array includes a plurality of microlens units, the input collimator array is used for collimating the input beams, and each microlens unit is in one-to-one correspondence with the output ports, and the collimator and the optical fiber array are adjusted by The distance, as well as the focal length of the microlens, enables beam collimation.
- the working distance of the collimator is D1.
- the first stage digital MEMS switch array is located at a working distance of the collimating mirror.
- the mounting angle of the first multi-level MEMS switch array is at an angle to the input beam so that the beams of the input and output switch arrays form an angle of 2 to avoid interference of the optical path.
- the first multi-level MEMS switch array includes S switching units, each of which can select a particular angle in the S directions.
- the switch unit has a circular layout with a center radius r, and the position on the ring corresponds to the angular direction of the rotation of the switch unit.
- the layout radius r satisfies the following formula one:
- f is the focal length of the lens.
- the first-stage digital MEMS switch array and the second-stage digital MEMS switch array are respectively located at the focal planes on both sides.
- the focal length of the lens By setting the focal length of the lens to achieve spot change, the beam waist radius of the first-stage digital MEMS switch array is ⁇ 1 , and the beam waist radius at the second-stage digital MEMS switch array is ⁇ 2 , and ⁇ 1 and ⁇ 2 are equal.
- the focal length satisfies the following formula 2:
- the lens can also realize the optical path conversion function. Even if any micromirror on the first-stage digital MEMS switch array deflects the same direction and angle, the light beam is mapped to the switch unit corresponding to the same position on the second-stage digital MEMS switch array.
- the first stage digital MEMS switch array comprises: S switch units; each switch unit can switch the beam to S (positive integer) directions, each direction can switch a set angle; S switch arrangement It is determined by the switching direction and switching angle of the switching unit in the first optical array.
- the switching unit arrangement direction is in one-to-one correspondence with the switching direction of the first multi-level MEMS switch array; the distance between the switching unit and the center point and the switching angle of the first multi-level MEMS switch array satisfy the foregoing formula 1;
- Output collimator array and output fiber array collimate S output beams, receive S beams from the second-stage digital MEMS switch array, and enable high-efficiency coupling output;
- an SxT optical cross device provided by an embodiment of the present application is introduced.
- the device includes: an input fiber array, an input collimator array, a first-stage digital MEMS switch array, a lens, and a second-stage digital MEMS. Switch array, output collimator array, and output fiber array.
- the input fiber array includes a two-dimensional fiber array
- the input collimator array includes a two-dimensional collimator array.
- the S (positive integer) input beams are collimated, the beam waist position is mapped to the first multi-stage MEMS optical switch unit, and the first multi-level MEMS switch array includes S first multi-level MEMS optical switch units.
- the first multi-level MEMS switch array comprises: S switch units; each switch unit can switch the beam to M (positive integer) directions, each direction can switch a set angle; the arrangement of the S switch units is The switching direction and switching angle of the switching unit in the second multi-stage MEMS switch array are determined.
- the switching unit arrangement direction is in one-to-one correspondence with the switching direction of the second multi-level MEMS switch array; the distance between the switching unit and the center point and the switching angle of the second multi-level MEMS switch array satisfy the following formula 3:
- ⁇ j is the deflection angle of the corresponding switching unit in the second multi-stage MEMS switch array.
- the focal length is f, which satisfies the above formula 2; the first multi-level MEMS switch array and the second multi-level MEMS switch array are respectively located at the front and rear of the lens, at the focal plane; the spot conversion function is realized: mapping the first multi-level MEMS switch array The beam is beamed to the second multi-level MEMS switch array; optical path transformation is performed: any micromirrors on the first multi-stage MEMS switch array are deflected in the same direction and angle, and the beam is mapped to the same on the second multi-stage MEMS switch array The switch unit corresponding to the position; the focal length satisfies the following formula four:
- the second multi-level MEMS switch array comprises: T switch units; each switch unit can switch the beam to S (positive integer) directions, each direction can switch at least one set angle; the arrangement manner of T switch units By first The switching direction and switching angle of the switching unit in the multi-level MEMS switch array are determined.
- the switching unit arrangement direction is in one-to-one correspondence with the switching direction of the first multi-level MEMS switch array; the distance between the switching unit and the center point and the switching angle of the first multi-level MEMS switch array satisfy the formula 5:
- ⁇ i is the deflection angle of the first multi-level MEMS switch array with the corresponding switching unit.
- Output collimator array and output fiber array T (positive integer) output beams are collimated, T beams from the second optical switch array are received, and coupled out.
- the device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be Physical units can be located in one place or distributed to multiple network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the embodiment.
- the connection relationship between the modules indicates that there is a communication connection between them, and specifically may be implemented as one or more communication buses or signal lines.
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Abstract
一种多级MEMS光开关单元和光交叉装置。在多级MEMS光开关单元中,微反射镜通过悬臂梁与基底建立有可活动连接;悬臂梁,用于在N个电极都未产生作用力时使得微反射镜保持初始状态;在N个电极中的至少一个电极产生作用力时使得微反射镜处于目标偏转状态;当作用力为零时,使微反射镜恢复初始状态;微反射镜和基底之间形成有腔体空间,N个电极和M个阻挡器都设置在腔体空间内,N个电极和M个阻挡器固定在基底;N个电极中的至少一个电极,用于产生作用力,控制微反射镜进入偏转状态;微反射镜,用于在N个电极中的至少一个电极的作用力下进入偏转状态;M个阻挡器中的至少一个阻挡器,用于阻挡微反射镜,使得微反射镜停止到目标偏转状态。
Description
本申请实施例涉及光通信领域,尤其涉及一种多级微机电***(Micro-Electro-Mechanical System,MEMS)光开关单元和光交叉装置。
近年来,随着光开关技术的发展和波分复用(Wavelength Division Multiplex,WDM)的规模应用,光网络节点设备的容量越来越大,对网络的生存性提出了更高的要求,光交叉连接(Optical Cross-connect,OXC)集传输与交换于一体,具有传输容量大、组网灵活、网络具有可扩展性和可重构性、易于升级、可透明传输各种格式的不同速率等级的信号,能够同时适应用户信号种类和服务种类不断增长的需求等诸多优点,是构成光传送网络(Optical Transport Network,OTN)的重要节点设备。
实现OXC的关键在于开发应用先进的光器件,其中,在光开关方面有机械光开关、聚合物开关(polymer)、半导体光开关、平面光波导光开关(Planar Lightwave Circuit,PLC)和MEMS等,特别是MEMS光开关,技术发展很快。OXC光开关正在向低损耗、高隔离度、灵活动态、功耗低、体积小和成本低等优点于一身的方向发展。
目前被成熟商业化多为基于MEMS技术的OXC。利用微动微反射镜制作OXC光开关矩阵,微动微反射镜可以采用上下折叠方式、左右移动方式或旋转方式来实现光开关的导通和断开功能。MEMS技术制作的光开关是将机械结构、微触动器和微动微反射镜在同一衬底上集成,结构紧凑、重量轻,易于扩展。MEMS光开关可包括基于二维(2 Dimensional,2D)和三维(3 Dimensional,3D)的MEMS光开关。其中,2D的MEMS光开关为数字结构,3D的MEMS光开关为模拟结构。
在2D的MEMS光开关中,所有微反射镜和输入输出光纤位于同一平面上,通过静电致动器使微反射镜直立和倒下或使微反射镜以“翘翘板”的方式处于光路和弹出光路的工作方式来实现“开”和“关”的功能,所以2D结构又称为数字型。
一个N×N的2D光开关需要N2个微反射镜,2D结构的优点是控制简单,缺点是由于受光程和微反射镜面积的限制,交换端口数不能做得很大。在3D结构中,所有微反射镜处于相向的两个平面上,通过改变每个微反射镜的不同位置来实现光路的切换。
一个N×N的3D光开关只需要2N个微反射镜,但每个微反射镜至少需要N个可精确控制的可动位置,所以3D结构又称为模拟型。与2D结构相反,3D结构的优点是交换端口数能做得很大,可实现上千端口数的交换能力。
在大规模OXC中主要应用3D的MEMS结构,而3D MEMS是模拟的微反射镜切换后的状态为悬空状态,存在切换的振荡时间较长、切换速度慢的问题,例如3D模拟式MEMS的切换时,当控制微反射镜偏转到设计位置时,微反射镜最终处于悬空状态,所以微反射镜需要一定时间振荡后才能达到稳定状态。微反射镜的振荡时间一般为大于10毫秒(millisecond,ms),受限于微反射镜的振荡时间,微反射镜的切换速度一般都是10ms或者100ms量级。严重影响了微反射镜的状态切换时间,导致基于3D模拟MEMS的OXC切
换速度受限制受限于MEMS的切换速度。
另外,现有技术提供的MEMS结构为模拟式的MEMS,还存在控制机理和驱动结构相当复杂的问题,其工作方式为模拟式,所以控制电路需要能精准控制电极所加电压来控制微反射镜的偏转状态,控制部分复杂,成本较高。
发明内容
本申请实施例提供了一种多级MEMS光开关单元和光交叉装置,能够实现多级数字化的光交换引擎,简化对微控制镜的偏转状态控制。
第一方面,本申请实施例提供一种多级MEMS光开关单元,包括:微反射镜、基底、悬臂梁、N个电极和M个阻挡器,所述N、M均为大于或等于2的正整数,其中,所述微反射镜通过所述悬臂梁与所述基底建立有可活动连接;所述悬臂梁,用于在所述N个电极都未产生作用力时使得所述微反射镜保持初始状态;在所述N个电极中的至少一个电极产生作用力时使得所述微反射镜处于目标偏转状态;当所述作用力为零时,使所述微反射镜恢复初始状态;所述微反射镜和所述基底之间形成有腔体空间,所述N个电极和所述M个阻挡器都设置在所述腔体空间内,所述N个电极和所述M个阻挡器固定在所述基底;所述N个电极中的至少一个电极,用于产生作用力,控制所述微反射镜进入偏转状态;所述微反射镜,用于在所述N个电极中的至少一个电极的作用力下进入偏转状态;所述M个阻挡器中的至少一个阻挡器,用于阻挡所述微反射镜,使得所述微反射镜停止到目标偏转状态。
本申请实施例中,多级MEMS光开关单元可包括:微反射镜、基底、悬臂梁、N个电极和M个阻挡器,微反射镜通过悬臂梁与基底建立有可活动连接;悬臂梁,用于在N个电极都未产生作用力时使得微反射镜保持初始状态;在电极产生的作用力时使得微反射镜处于目标偏转状态;当作用力为零时,使微反射镜恢复初始状态;微反射镜和基底之间形成有腔体空间,N个电极和M个阻挡器都设置在腔体空间内,N个电极和M个阻挡器固定在基底;电极用于产生作用力,控制微反射镜进入偏转状态;微反射镜,用于在电极的作用力下进入偏转状态;阻挡器,用于阻挡微反射镜,使得微反射镜停止到目标偏转状态。由于本申请实施例中,可以通过多电极产生作用力从而控制微反射镜处于目标偏转状态,因此本申请实施例可以实现多级数字化的光交换引擎,多级MEMS光开关单元结构中的有多个阻挡器,使得微反射镜切换时的振荡时间缩短,具有高速的切换速度,作为数字化芯片其切换速度远快于模拟式MEMS芯片,同时数字化芯片的控制电路更加简单,***调试组装更加便捷。由于多级MEMS光开关单元具有多个控制电极和阻挡柱,使微反射镜有多个偏转状态,容易实现大端口的OXC。
在本申请第一方面的一个可能设计中,所述悬臂梁,具体用于在所述N个电极都未施加电压时使得所述微反射镜保持初始状态;在所述N个电极中的至少一个电极产生静电力时,使得所述微反射镜处于目标偏转状态;当所述静电力为零时,使所述微反射镜恢复初始状态;所述N个电极中的至少一个电极,具体用于施加电压后对所述微反射镜产生静电力。本申请实施例中N个电极中的至少一个电极可以施加电压,从而对微反射镜产生静电力,微反射镜可以在静电力作用下进行偏转。
在本申请第一方面的一个可能设计中,所述多级MEMS光开关单元,还包括:N个硅通
孔和电极控制电路,其中,所述N个电极通过所述N个硅通孔分别与所述电极控制电路相连接;所述电极控制电路,用于控制所述N个电极中的至少一个电极产生作用力。电极可以通过硅通孔与基底另一侧的焊点连接,电极控制电路通过这些焊点与电极相连接,电极控制电路可以通过硅通孔控制N个电极上的电压。
在本申请第一方面的一个可能设计中,所述N和所述M相等,所述N个电极与所述M个阻挡器之间一一对应;所述N个电极在所述基底均匀分布,且所述M个阻挡器在所述基底均匀分布;当第i个电极产生作用力时,第i个阻挡器对所述微反射镜提供阻挡,使得所述微反射镜停止在目标偏转状态,所述i为小于或等于所述N的一个正整数。阻挡器的个数M可以等于电极的个数N,例如每一个阻挡器可对应设置一个阻挡器,例如第i个电极的周围可以设置第i个阻挡器,则第i个阻挡器可用于在第i个电极产生静电力时对微反射镜的阻挡,使得微镜切换时的振荡时间缩短。通过电极与阻挡器之间一一对应的设置关系,可以简化多级MEMS光开关单元的加工难度。
在本申请第一方面的一个可能设计中,当所述基底为圆形结构时,所述N个电极围绕所述圆形结构的中心位置均匀分布,所述N个电极中相邻两个电极之间的夹角等于360°/N。N个电极中相邻两个电极之间的夹角等于360°/N,该电极围绕圆形结构的中心位置均匀分布,从而便于控制电极对微反射镜的静电力作用方向。
在本申请第一方面的一个可能设计中,所述微反射镜包括:圆形的反射镜片。
在本申请第一方面的一个可能设计中,所述悬臂梁的个数为K,所述K为正整数,且所述K小于所述N;所述M大于所述N。悬臂梁的个数需要综合考虑微反射镜的偏转方向数与切换速度以及精度要求。可以理解的是,若M大于N,则可以由至少两个阻挡器同时阻挡微反射镜的偏转。
第二方面,本申请实施例提供一种光交叉装置,所述光交叉装置包括:多级微机电***MEMS开关阵列,所述多级MEMS开关阵列包括:如前述第一方面中任一项的多级MEMS光开关单元。由于本申请实施例中,可以通过多电极产生作用力从而控制微反射镜处于目标偏转状态,因此本申请实施例可以实现多级数字化的光交换引擎,多级MEMS光开关单元结构中的有多个阻挡器,使得微反射镜切换时的振荡时间缩短,具有高速的切换速度,作为数字化芯片其切换速度远快于模拟式MEMS芯片,同时数字化芯片的控制电路更加简单,***调试组装更加便捷。由于多级MEMS光开关单元具有多个控制电极和阻挡柱,使微反射镜有多个偏转状态,容易实现大端口的OXC。
在本申请第二方面的一个可能设计中,所述多级MEMS开关阵列具体为第一多级MEMS开关阵列,或第二多级MEMS开关阵列;所述光交叉装置,还包括:输入端光纤阵列、输入端准直器阵列、透镜、输出端准直器阵列和输出端光纤阵列,其中,所述输入端光纤阵列,用于光束耦合输入;所述输入端准直器阵列,用于对从所述输入端光纤阵列输出的光束进行准直;所述第一多级MEMS开关阵列,包括S个第一多级MEMS光开关单元,所述第一多级MEMS光开关单元如前述第一方面中任一项的多级MEMS光开关单元,所述S为正整数;所述第一多级MEMS开关阵列,用于将所述输入端准直器阵列输出的光束,通过所述透镜映射至所述第二多级MEMS开关阵列;所述第二多级MEMS开关阵列,包括T个第二多级MEMS光开关单元,所述第二多级MEMS光开关单元如前述第一方面中任一项的多级MEMS光开关
单元,所述T为正整数;所述第二多级MEMS开关阵列,用于将来自所述第一多级MEMS光开关阵列的光束输出至所述输出端准直器阵列;所述输出端准直器阵列,用于对从所述第二多级MEMS开关阵列输出的光束进行准直;所述输出端光纤阵列,用于光束耦合输出。通过前述的光交叉装置,可以实现光信号的快速无损切换。
在本申请第二方面的一个可能设计中,所述输入端光纤阵列,包括:S个输入端口,每个输入端口位置布局与所述第一多级MEMS光开关单元的映射位置一一对应;所述输出端光纤阵列,包括:T个输出端口,其中,每个输出端口位置布局与所述第二多级MEMS光开关单元的映射位置一一对应;每个所述第一多级MEMS光开关单元可切换波束至T个方向,所述第一多级MEMS光开关单元的排布方式通过所述第二多级MEMS光开关单元的切换方向和切换角度,以及透镜焦距确定;每个所述第二多级MEMS光开关单元可切换波束至S个方向,所述第二多级MEMS光开关单元的排布方式通过所述第一多级MEMS光开关单元的切换方向和切换角度,以及透镜焦距确定。
在本申请第二方面的一个可能设计中,所述S等于所述T。输入端光纤阵列中的输入端口和输出端口的个数相等,第一多级MEMS开关阵列包含的第一多级MEMS光开关单元的个数也等于第二多级MEMS开关阵列包含的第二多级MEMS光开关单元。不限定的,输入端口的个数也可以和输出端口的个数不相同。
在本申请第二方面的一个可能设计中,所述多级MEMS光开关单元在所述多级MEMS开关阵列上的排布方式为环状分布。多级MEMS开关阵列上的N个多级MEMS光开关单元呈环状分布,N个多级MEMS光开关单元共有N个微反射镜。
在本申请第二方面的一个可能设计中,所述多级MEMS开关阵列中的当前多级MEMS光开关单元切换至目标多级MEMS光开关单元时,光束切换采用直线切换路径、或者折线切换路径或者弧形切换路径。通过多级MEMS开关阵列采用的不同切换切换,可以提高光信号切换的速度。
在本申请第二方面的一个可能设计中,所述折线切换路径包括:两步的直线切换路径,所述两步的直线切换路径经过所述多级MEMS开关阵列的中心点位置。多级MEMS开关阵列采用的折线切换路径经过中心点位置,通过两步的直线切换可以完成光信号切换,相比于现有技术,减少了光切换的路径数,可以提高光路切换的效率。
图1为本申请实施例提供的一种多级MEMS光开关单元的俯视结构示意图;
图2为本申请实施例提供的多级MEMS光开关单元的侧视结构示意图;
图3为本申请实施例提供的电极被阻挡器所阻挡的示意图;
图4为本申请实施例提供的光交叉装置的一种组成结构示意图;
图5为本申请实施例提供的光交叉装置的另一种组成结构示意图;
图6为本申请实施例提供的光交叉装置中多级MEMS光开关单元的一种布局方式示意图;
图7为本申请实施例提供的光交叉装置中多级MEMS光开关单元的另一种布局方式示意图;
图8为本申请实施例提供的光交叉装置中一种光束切换路径的示意图;
图9为本申请实施例提供的光交叉装置中另一种光束切换路径的示意图;
图10为本申请实施例提供的光交叉装置中另一种光束切换路径的示意图。
本申请实施例提供了一种多级MEMS光开关单元和光交叉装置,能够实现多级数字化的光交换引擎,简化对微控制镜的偏转状态控制。
下面结合附图,对本申请的实施例进行描述。
本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的术语在适当情况下可以互换,这仅仅是描述本申请的实施例中对相同属性的对象在描述时所采用的区分方式。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,以便包含一系列单元的过程、方法、***、产品或设备不必限于那些单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它单元。
首先对本申请实施例提供的多级MEMS光开关单元进行举例说明,该多级MEMS光开关单元可应用于光交叉装置中。请参阅图1和图2所示,本申请实施例提供的多级MEMS光开关单元,可以包括:微反射镜101、基底102、悬臂梁103、N个电极104(例如1041-104N)和M个阻挡器105(例如1051-150M),N、M均为大于或等于2的正整数,其中,
微反射镜101通过悬臂梁103与基底102建立有可活动连接;
悬臂梁103,用于在N个电极104都未产生作用力时使得微反射镜101保持初始状态;在N个电极104中的至少一个电极产生的作用力时使得微反射镜101处于目标偏转状态;当所述作用力为零时,使微反射镜101恢复初始状态;
微反射镜101和基底102之间形成有腔体空间,N个电极104和M个阻挡器105都设置在腔体空间内,N个电极104和M个阻挡器105固定在基底;
N个电极104中的至少一个电极,用于产生作用力,控制微反射镜101进入偏转状态;
微反射镜101,用于在N个电极104中的至少一个电极的作用力下进入偏转状态;
M个阻挡器105中的至少一个阻挡器,用于阻挡微反射镜101,使得微反射镜停止到目标偏转状态。
其中,微反射镜101和基底102建立的可活动连接,也可以称为可以活动连接,即微反射镜101和悬臂梁103相连接,悬臂梁103具有延展性,该悬臂梁103再和基底102连接。
需要说明的是,在本申请实施例中,N个电极104中可以有一个电极产生作用力,也可以有两个或者多个相邻的电极同时产生作用力,微反射镜101可以在一个电极或者多个电极的作用力下进入偏转状态。同样的,M个阻挡器105中可以有一个阻挡器来阻挡微反射镜,也可以同时有两个更多的阻挡器同时阻挡微反射镜,此处不做限定。
在本申请的一些实施例中,悬臂梁103,用于在N个电极104都未施加电压时使得微反射镜101保持初始状态;在N个电极104中的至少一个电极产生静电力时,使得微反射镜101处于目标偏转状态;当静电力为零时,使微反射镜101恢复初始状态;
N个电极104中的至少一个电极,用于施加电压后对微反射镜101产生静电力。
其中,微反射镜101,用于在静电力的作用下进入偏转状态。在本申请实施例中,电极和阻挡器都设置在微反射镜和基底形成的腔体空间内,微反射镜的偏转可以由N个电极中的至少一个电极产生的静电力来控制,M个阻挡器中的至少一个阻挡器可以用于阻挡反射镜的偏转,使得微反射镜停止到目标偏转状态,该阻挡器的个数M可以等于电极的个数N,或者阻挡器的个数M大于电极的个数N,此处不做限定。
需要说明的是,在本申请实施例中,电极产生的作用力具体可以是静电力,通过静电力控制微反射镜的偏转,电极还可以通过热驱动的方式控制微反射镜的偏转,例如电极通过施加电流产生热能,通过热能驱动悬臂梁产生扭矩,再通过该扭矩控制微反射镜的偏转。
现有技术中,大端口OXC都是使用3D模拟式MEMS芯片作为光交换引擎,端口切换速度受限于微反射镜的切换速度,导致OXC的切换速度很难有所提高。本发明实施例中可以通过多电极产生静电力从而控制微反射镜处于目标偏转状态,因此本申请实施例可以实现多级数字化的光交换引擎,多级MEMS光开关单元的结构中有多个阻挡器(也可以称为阻挡柱),后续实施例中对阻挡器和阻挡柱不做区分,使得微反射镜切换时的振荡时间缩短,具有高速的切换速度,多级MEMS光开关单元作为数字化芯片,其切换速度远快于模拟式MEMS芯片,同时数字化芯片的控制电路更加简单,***调试组装更加便捷;多级MEMS光开关单元具有多个控制电极和多个阻挡柱,使微反射镜有多个偏转状态,容易实现大端口的OXC。基于多级MEMS光开关单元的OXC具有切换速度快,损耗低,偏振不相关和端口数大的优点,其中偏振不相关是对于任意偏振态的光,多级MEMS光开关单元都可以进行光传输处理。
在本申请的一些实施例中,如图2所示,基底102和悬臂梁103的一端面相连接;
微反射镜101和悬臂梁103的另一端面相连接,悬臂梁103的两个端面对称设置。
其中,基底102可提供悬臂梁103的活动支撑力,使得微反射镜101可以通过悬臂梁103与基底102建立有可活动连接。
在本申请的一些实施例中,N和M相等,N个电极与M个阻挡器之间一一对应;
N个电极在基底均匀分布,且M个阻挡器在基底均匀分布;
当第i个电极产生作用力时,第i个阻挡器对微反射镜提供阻挡,使得微反射镜停止在特定偏转状态,i为小于或等于N的一个正整数。
其中,阻挡器的个数M可以等于电极的个数N,例如每一个阻挡器可对应设置一个阻挡器,例如第i个电极的周围可以设置第i个阻挡器,则第i个阻挡器可用于在第i个电极产生静电力时对微反射镜的阻挡,使得微镜切换时的振荡时间缩短。通过电极与阻挡器之间一一对应的设置关系,可以简化多级MEMS光开关单元的加工难度。
在本申请的一些实施例中,当基底为圆形结构时,N个电极围绕圆形结构的中心位置均匀分布,N个电极中相邻两个电极之间的夹角等于360°/N。
如图1所示,N个电极中相邻两个电极之间的夹角等于360°/N,该电极围绕圆形结构的中心位置均匀分布,从而便于控制电极对微反射镜的静电力作用方向。
在本申请的一些实施例中,如图2所示,多级MEMS光开关单元,还包括:N个硅通孔107和电极控制电路,其中,
N个电极通过N个硅通孔107分别与电极控制电路相连接;
电极控制电路,用于控制N个电极中的至少一个电极产生作用力。
需要说明的是,在图2中没有示意出电极控制电路,电极可以通过硅通孔与基底另一侧的焊点106连接,电极控制电路通过这些焊点106与电极104相连接,电极控制电路可以通过硅通孔控制N个电极上的电压。
在本申请的一些实施例中,微反射镜包括:圆形的反射镜片。例如微反射镜可以包含一个圆形的反射镜片,本申请实施例中微反射镜所包括的反射镜片还可以实际场景灵活配置,此处不做限定。在本申请的另一些实施例中,如图2所示,通过选择在镜面镀合适的反射膜108,微反射镜能将入射到其表面的光束反射出去。
在本申请的一些实施例中,悬臂梁的个数为K,K为正整数,且K小于N;M大于N。其中,悬臂梁的个数需要综合考虑微反射镜的偏转方向数与切换速度以及精度要求。可以理解的是,若M大于N,则可以由至少两个阻挡器同时阻挡微反射镜的偏转。
在本申请实施例提供的多级MEMS光开关单元中,包括微反射镜、K个悬臂梁、N个电极、M个阻挡器等结构,能够实现光束N个方向,每个方向至少一个状态偏转切换。微反射镜用于反射入射到镜面的光束,被K个悬臂梁连接在基底上。K的个数为大于4,小于N的正整数,悬臂梁可以将微反射镜悬空连接在基底上,具有弹性的悬臂梁使得加电时微反射镜可以产生N个方向偏转。N个电极分布在微反射镜的下面,通过加电使得微反射镜产生N个方向倾斜。M个阻挡器分布在微反射镜的下面,决定了微反射镜加电后最后的倾斜角度和切换速度。
接下来对多级MEMS光开关单元的应用场景进行示意说明,图1中所示的是单个多级MEMS光开关单元,也称为单个多级数字式MEMS镜片,整个多级数字式MEMS镜片的结构可以包含:反射镜(mirror)101、基底(substrate)102、k个悬臂梁103、N个电极(electrode)104和M个阻挡柱(stopper)105等部分。如图2所示,整个多级数字式MEMS镜片还可以包括:焊料106、硅通孔107、反射膜108。
本申请实施例提供的多级MEMS光开关单元中,反射镜具有N个工作状态,且状态切换时间小于1ms,因此本申请实施例提供的多级MEMS光开关单元的状态切换时间远小于现有技术的连续可调的MEMS镜片结构的切换时间(大约100ms)。如图1所示,微反射镜结构包含一个圆形的反射镜片,通过选择在镜面镀合适的反射膜,微反射镜能将入射到其表面的光束反射出去。如图1和图2所示,k个悬臂梁将镜面连接在一个基底上,镜片与正下方的基底有一定的间隔,形成一个腔体空间,也可以称为隔空空间,在电极未加任何电压的情况下,k个悬臂梁使得镜面静止平行于X-Y平面。k个悬臂梁具有一定的延展性,镜面在受力的情况下可以活动。悬臂梁的个数k大于4、小于电极的个数N,N为微反射镜的转动方向数,具体的电极个数要综合考虑镜片的偏转方向数与切换速度以及精度要求。在镜片下方、基底表面上均匀分布着N个电极,每个电极之间的夹角为360°/N,360°表示圆周360度。电极加上电压后会对正上方的镜面产生静电力,给镜片一个延Z方向向下的静电力,镜片受力后将向Z轴方向产生倾斜,N个电极通过硅通孔技术与基底另一侧焊点连接,电极控制电路通过这些焊点与微反射镜结构中的电极相连接,通过控制不同的电极加电情况来控制在镜面哪个方向施加静电力,从而实现控制镜片的倾斜方向。当镜片倾斜角度改变后,反射光束的方向也相应发生改变。镜片的下端均匀分布着M个阻挡柱,如图
2所示,当某一个电极加电时,镜片受到这个电极方向的静电力作用产生倾斜,镜片碰到阻挡柱后停止倾斜,此时的镜面状态就是这个电极加电时对应的镜片状态。
如图3所示,阻挡柱决定了镜片的倾斜状态,M个阻挡柱决定了镜面一共有N个偏转方向数,阻挡柱的高度和离中心位置的距离决定了镜面偏转时倾斜的角度。阻挡柱的存在大大减少了镜片运动到最终状态时的阻尼运动时间,提高了微反射镜状态之间的切换速度。图1所示的数字化微反射镜通过控制微反射镜结构下面电极的加电状态来控制微反射镜的偏转状态,从而控制入射到微反射镜的光束的反射方向,反射光束可以偏转N个方向,每个方向可偏转一个预设的角度,对同一束入射光束一共可以提供N个反射状态。
前述申请实施例中对多级MEMS光开关单元的结构进行了举例说明,并针对多级MEMS光开关单元的相关特性进行了全新的光路设计,使其在OXC模块中得以应用。同时,针对多级MEMS光开关单元可以产生多个偏转状态,入射交付要求严格等部分进行了特殊设计。最终形成了与传统的基于MEMS的OXC模块相区别的基于多级数字化MEMS芯片的光交换引擎的OXC装置。
接下来对本申请实施例提供的光交叉装置进行示意说明,光交叉装置包括:MEMS开关阵列,该多级MEMS开关阵列可以包括:如前述图1至图2中的多级MEMS光开关单元。
在本申请的一些实施例中,多级MEMS开关阵列具体为第一多级MEMS开关阵列,或第二多级MEMS开关阵列;
如图4和图5所示,本申请实施例提供的光交叉装置,还包括:输入端光纤阵列、输入端准直器阵列、透镜、输出端准直器阵列和输出端光纤阵列,其中,
输入端光纤阵列,用于光束耦合输入;
输入端准直器阵列,用于对从输入端光纤阵列输出的光束进行准直;
第一多级MEMS开关阵列,包括S个第一多级MEMS光开关单元,第一多级MEMS光开关单元如前述图1和图2所示的多级MEMS光开关单元,S为正整数;第一多级MEMS开关阵列,用于将输入端准直器阵列输出的光束,通过透镜映射至第二多级MEMS开关阵列;
第二多级MEMS开关阵列,包括T个第二多级MEMS光开关单元,第二多级MEMS光开关单元如前述图1和图2所示的多级MEMS光开关单元,T为正整数;第二多级MEMS开关阵列,用于将来自第一多级MEMS光开关阵列的光束输出至输出端准直器阵列;
输出端准直器阵列,用于对从第二多级MEMS开关阵列输出的光束进行准直;
输出端光纤阵列,用于光束耦合输出。
其中,如图4和图5所示,第一多级MEMS开关阵列中包括多个第一多级MEMS光开关单元,图4中简写为MEMS1,图5中该第一多级MEMS光开关单元也可以称为“第一多级数字式MEMS光开关”,同样的,第二多级MEMS开关阵列中包括多个第二多级MEMS光开关单元,图4中简写为MEMS2,图5中该第二多级MEMS光开关单元也可以称为“第二多级数字式MEMS光开关”。
在本申请的一些实施例中,输入端光纤阵列,包括:S个输入端口,每个输入端口位置布局与所述第一多级MEMS光开关单元的映射位置一一对应;
所述输出端光纤阵列,包括:T个输出端口,其中,每个输出端口位置布局与所述第二多级MEMS光开关单元的映射位置一一对应;
每个第一多级MEMS光开关单元可切换波束至T个方向,第一多级MEMS光开关单元的排布方式通过第二多级MEMS光开关单元的切换方向和切换角度,以及透镜焦距确定;
每个第二多级MEMS光开关单元可切换波束至S个方向,第二多级MEMS光开关单元的排布方式通过第一多级MEMS光开关单元的切换方向和切换角度,以及透镜焦距确定。
在本申请实施例中,输入端光纤阵列和输入端准直器阵列使S(正整数)个输入光束准直,映射光束束腰位置至第一多级MEMS开关阵列。
第一多级MEMS开关阵列可以包含S个第一多级MEMS光开关单元(简称为开关单元),每个开关单元可以切换光束至T(正整数)个方向,每个方向至少能够切换一个所设置的角度;S个开关单元的排布方式由第二多级MEMS开关阵列中开关单元的切换方向和切换角度决定。S个开关单元的排布方向与第二多级MEMS开关阵列的切换方向一一对应。
第一多级MEMS开关阵列和第二多级MEMS开关阵列分别位于透镜的前后焦平面处,映射第一多级MEMS开关阵列上的光束束腰至第二多级MEMS开关阵列处,实现光斑变化,使第一多级MEMS开关阵列上任意微反射镜偏转相同方向和角度,光束映射至第二多级MEMS开关阵列上的同一位置,例如映射至第二多级MEMS开关阵列上的同一位置的开关单元。
第二多级MEMS开关阵列包含T个第二多级MEMS光开关单元(简称为开关单元);每个开关单元可以切换光束至S(正整数)个方向,每个方向至少能够切换一个所设置的角度;T个开关单元的排布方式由第一多级MEMS开关阵列中开关单元的切换方向和切换角度决定。T个开关单元的排布方向与第一多级MEMS开关阵列的切换方向一一对应。
输出端光纤阵列和输出端准直器阵列使T(正整数)个输出光束准直,接收来自于第二多级MEMS开关阵列的T个光束,并使之耦合输出。
在本申请的一些实施例中,S等于T。即输入端光纤阵列中的输入端口和输出端口的个数相等,第一多级MEMS开关阵列包含的第一多级MEMS光开关单元的个数也等于第二多级MEMS开关阵列包含的第二多级MEMS光开关单元。不限定的,输入端口的个数也可以和输出端口的个数不相同。
在本申请的一些实施例中,多级MEMS光开关单元在多级MEMS开关阵列上的排布方式为环状分布。如图6所示,多级MEMS开关阵列上的N个多级MEMS光开关单元呈环状分布,N个多级MEMS光开关单元共有N个微反射镜。图中,对于每个多级MEMS光开关单元可以有N个固定角,对于多级MEMS光开关单元的不同倾角,使得多级MEMS光开关单元具有不同的倾斜方向。
进一步的,在本申请的一些实施例中,多级MEMS开关阵列中的当前多级MEMS光开关单元切换至目标多级MEMS光开关单元时,光束切换采用直线切换路径、或者折线切换路径或者弧形切换路径。
其中,本申请实施例中,多级MEMS光开关单元的光束切换可以采取多种路径,例如可以采用直线切换路径、或者折线切换路径或者弧形切换路径。分别如图8至图10所示。
进一步的,在本申请的一些实施例中,折线切换路径包括:两步的直线切换路径,两步的直线切换路径经过多级MEMS开关阵列的中心点位置。
接下来请参阅图7至图10所示,对本发明实施例中多级MEMS光开关单元的无损切换方式进行举例说明,以图7为例,1个圆圈表示一个开关单元。图8表示的是直线切换路
径,图9表示的是折线切换路径,图10表示的是弧形切换路径。现有技术中OXC开关为避免切换光束对正在通信端口产生影响,需按照特定路径进行切换。从现有端口切换到目标端口一般需要3-5个切换过程。本申请实施例中OXC开关的开关速度一般为开关单元切换速度的3-5倍。针对前述光开关单元环形布局,由于切换路径中不经过其它端口,所以从任意端口切换至目标端口只需一步切换流程,即OXC开关速度缩短至与开关单元切换速度相等。
本申请实施例还提供一种快速无损切换方式,针对串扰要求敏感,且相邻端口间无损切换。多级MEMS开关阵列采用前述实施例中的环形布局。切换可由切换端口至开关阵列中心点,然后切换至目标端口。OXC开关的开关速度为开关单元切换速度的2倍。考虑到若干端口同时切换操作的情况,也可采用弧形切换路径,以避免同时切换若干端口间的串扰。同时提升OXC开关的开关速度小于开关单元切换速度的2倍。
本申请实施例还提供一种OXC开关单元排列布局方式、以及无损切换方式。所述OXC开关单元布局为前述的安装环状或近环状排列,采用预切换端口至目标端口间,两步或一步直达切换方式,从而提高光路切换的效率。
本申请实施例提出一种数字化的多级MEMS光开关单元,该多级MEMS光开关单元同时具有快速和多状态两种特性;本申请实施例还提出一种快速光开关装置,采用所述多状态、高速开关单元能够实现能够大端口数高速OXC开关装置;本申请提出了一种快速无损光开关,开关阵列布局和切换方式,能够进一步提升现有OXC开关装置切换速度;通过前述提出的高速、多状态开关单元,快速光开关装置以及快速无损切换方式,能够突破现有OXC端口数和开关速度相互制约的困境,实现大端口高速OXC,对于提升现有网络以及集群光交换效率非常有帮助。
接下来对基于多级MEMS光开关单元实现的光交叉装置进行举例说明,如图4和图5所示,为一种SxS光交叉装置,所述装置包括:输入端光纤阵列、输入端准直器阵列、第一多级MEMS开关阵列(也称为第一级数字式MEMS开关阵列)、透镜、第二多级MEMS开关阵列(也称为第二级数字式MEMS开关阵列),输出端准直器阵列以及输出端光纤阵列。
所述输入端光纤阵列,用于光束耦合输入,包含S个输入端口,每个端口位置布局与第一多级MEMS开关阵列的映射位置一一对应;
所述输入端准直器阵列,包括多个微透镜单元,输入端准直器阵列用于准直输入光束,每个微透镜单元与输出端口一一对应,通过调节准直器与光纤阵列的距离,以及微透镜的焦距,实现光束准直功能。其中准直器工作距离为D1。
所述第一级数字式MEMS开关阵列位于准直镜工作距离处。第一多级MEMS开关阵列的安装角度与输入光束夹角为,以便输入、输出开关阵列的光束形成2夹角,以避免光路干涉。第一多级MEMS开关阵列包含S个开关单元,每个开关单元可以向S个方向选择特定角度。开关单元呈环形布局,圆心半径为r,在圆环上的位置与开关单元转动的角度方向一一对应。其中布局半径r满足如下的公式一:
其中,f表示透镜焦距。
所述透镜可形成的光中继***中,第一级数字式MEMS开关阵列和第二级数字式MEMS开关阵列分别位于两侧焦平面处。通过设定透镜焦距实现光斑变换,第一级数字式MEMS开关阵列的光斑束腰半径为ω1,第二级数字式MEMS开关阵列处的光斑束腰半径为ω2,ω1和ω2相等。焦距满足如下的公式二:
同时透镜还可以实现光路变换功能,即使第一级数字式MEMS开关阵列上任意微反射镜偏转相同方向和角度,光束映射至第二级数字式MEMS开关阵列上的同一位置所对应的开关单元。
所述第一级数字式MEMS开关阵列:包含S个开关单元;每个开关单元可以切换光束至S(正整数)个方向,每个方向能够切换一个所设置的角度;S个开关排布方式由第一光阵列中开关单元的切换方向和切换角度决定。开关单元排布方向与第一多级MEMS开关阵列的切换方向一一对应;开关单元距离中心点的距离与第一多级MEMS开关阵列的切换角度满足前述的公式一;
输出端准直器阵列和输出端光纤阵列:使S个输出光束准直,接收来自于第二级数字式MEMS开关阵列的S个光束,并使之高效耦合输出;
接下来介绍本申请实施例提供的一种SxT光交叉装置,所述装置包括:输入端光纤阵列、输入端准直器阵列、第一级数字式MEMS开关阵列、透镜、第二级数字式MEMS开关阵列,输出端准直器阵列以及输出端光纤阵列。
输入端光纤阵列包括二维光纤阵列,输入端准直器阵列包括二维准直器阵列。使S(正整数)个输入光束准直,映射光束束腰位置至第一多级MEMS光开关单元,第一多级MEMS开关阵列包含S个第一多级MEMS光开关单元。
第一多级MEMS开关阵列:包含S个开关单元;每个开关单元可以切换光束至M(正整数)个方向,每个方向能够切换一个所设置的角度;S个开关单元的排布方式由第二多级MEMS开关阵列中开关单元的切换方向和切换角度决定。开关单元排布方向与第二多级MEMS开关阵列的切换方向一一对应;开关单元距离中心点的距离与第二多级MEMS开关阵列的切换角度满足如下的公式三:
其中,αj为第二多级MEMS开关阵列中随对应开关单元的偏转角度。
透镜:焦距为f,满足前述的公式二;第一多级MEMS开关阵列和第二多级MEMS开关阵列分别位于透镜的前后,焦平面处;实现光斑变换功能:映射第一多级MEMS开关阵列上的光束束腰至第二多级MEMS开关阵列处;实现光路变换:使第一多级MEMS开关阵列上任意微反射镜偏转相同方向和角度,光束映射至第二多级MEMS开关阵列上同一位置所对应的开关单元;焦距满足如下的公式四:
第二多级MEMS开关阵列:包含T个开关单元;每个开关单元可以切换光束至S(正整数)个方向,每个方向至少能够切换一个所设置的角度;T个开关单元的排布方式由第一
多级MEMS开关阵列中开关单元的切换方向和切换角度决定。开关单元排布方向与第一多级MEMS开关阵列的切换方向一一对应;开关单元距离中心点的距离与第一多级MEMS开关阵列的切换角度满足公式五:
其中,αi为第一多级MEMS开关阵列随对应开关单元的偏转角度。
输出端准直器阵列和输出端光纤阵:使T(正整数)个输出光束准直,接收来自于第二光开关阵列的T个光束,并使之耦合输出。
需要说明的是,对于前述的各方法实施例,为了简单描述,故将其都表述为一系列的动作组合,但是本领域技术人员应该知悉,本申请并不受所描述的动作顺序的限制,因为依据本申请,某些步骤可以采用其他顺序或者同时进行。其次,本领域技术人员也应该知悉,说明书中所描述的实施例均属于优选实施例,所涉及的动作和模块并不一定是本申请所必须的。
为便于更好的实施本申请实施例的上述方案,下面还提供用于实施上述方案的相关装置。
另外需说明的是,以上所描述的装置实施例仅仅是示意性的,其中所述作为分离部件说明的单元可以是或者也可以不是物理上分开的,作为单元显示的部件可以是或者也可以不是物理单元,即可以位于一个地方,或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部模块来实现本实施例方案的目的。另外,本申请提供的装置实施例附图中,模块之间的连接关系表示它们之间具有通信连接,具体可以实现为一条或多条通信总线或信号线。本领域普通技术人员在不付出创造性劳动的情况下,即可以理解并实施。
通过以上的实施方式的描述,所属领域的技术人员可以清楚地了解到本申请可借助软件加必需的通用硬件的方式来实现,当然也可以通过专用硬件包括专用集成电路、专用CPU、专用存储器、专用元器件等来实现。一般情况下,凡由计算机程序完成的功能都可以很容易地用相应的硬件来实现,而且,用来实现同一功能的具体硬件结构也可以是多种多样的,例如模拟电路、数字电路或专用电路等。但是,对本申请而言更多情况下软件程序实现是更佳的实施方式。在上述实施例中,可以全部或部分地通过软件、硬件、固件或者其任意组合来实现。
Claims (14)
- 一种多级微机电***MEMS光开关单元,其特征在于,多级MEMS光开关单元包括:微反射镜、基底、悬臂梁、N个电极和M个阻挡器,所述N、M均为大于或等于2的正整数,其中,所述微反射镜通过所述悬臂梁与所述基底建立有可活动连接;所述悬臂梁,用于在所述N个电极都未产生作用力时使得所述微反射镜保持初始状态;在所述N个电极中的至少一个电极产生作用力时使得所述微反射镜处于目标偏转状态;当所述作用力为零时,使所述微反射镜恢复初始状态;所述微反射镜和所述基底之间形成有腔体空间,所述N个电极和所述M个阻挡器都设置在所述腔体空间内,所述N个电极和所述M个阻挡器固定在所述基底;所述N个电极中的至少一个电极,用于产生作用力,控制所述微反射镜进入偏转状态;所述微反射镜,用于在所述N个电极中的至少一个电极的作用力下进入偏转状态;所述M个阻挡器中的至少一个阻挡器,用于阻挡所述微反射镜,使得所述微反射镜停止到目标偏转状态。
- 根据权利要求1所述的多级MEMS光开关单元,其特征在于,所述悬臂梁,具体用于在所述N个电极都未施加电压时使得所述微反射镜保持初始状态;在所述N个电极中的至少一个电极产生静电力时,使得所述微反射镜处于目标偏转状态;当所述静电力为零时,使所述微反射镜恢复初始状态;所述N个电极中的至少一个电极,具体用于施加电压后对所述微反射镜产生静电力。
- 根据权利要求1所述的多级MEMS光开关单元,其特征在于,所述多级MEMS光开关单元,还包括:N个硅通孔和电极控制电路,其中,所述N个电极通过所述N个硅通孔分别与所述电极控制电路相连接;所述电极控制电路,用于控制所述N个电极中的至少一个电极产生作用力。
- 根据权利要求1所述的多级MEMS光开关单元,其特征在于,所述N和所述M相等,所述N个电极与所述M个阻挡器之间一一对应;所述N个电极在所述基底均匀分布,且所述M个阻挡器在所述基底均匀分布;当第i个电极产生作用力时,第i个阻挡器对所述微反射镜提供阻挡,使得所述微反射镜停止在目标偏转状态,所述i为小于或等于所述N的一个正整数。
- 根据权利要求4所述的多级MEMS光开关单元,其特征在于,当所述基底为圆形结构时,所述N个电极围绕所述圆形结构的中心位置均匀分布,所述N个电极中相邻两个电极之间的夹角等于360°/N。
- 根据权利要求1所述的多级MEMS光开关单元,其特征在于,所述微反射镜包括:圆形的反射镜片。
- 根据权利要求1所述的多级MEMS光开关单元,其特征在于,所述悬臂梁的个数为K,所述K为正整数,且所述K小于所述N;所述M大于所述N。
- 一种光交叉装置,其特征在于,所述光交叉装置包括:多级微机电***MEMS开关阵列,所述多级MEMS开关阵列包括:如权利要求1至7中任一项的多级MEMS光开关单元。
- 根据权利要求8所述的光交叉装置,其特征在于,所述多级MEMS开关阵列具体为第一多级MEMS开关阵列,或第二多级MEMS开关阵列;所述光交叉装置,还包括:输入端光纤阵列、输入端准直器阵列、透镜、输出端准直器阵列和输出端光纤阵列,其中,所述输入端光纤阵列,用于光束耦合输入;所述输入端准直器阵列,用于对从所述输入端光纤阵列输出的光束进行准直;所述第一多级MEMS开关阵列,包括S个第一多级MEMS光开关单元,所述第一多级MEMS光开关单元如权利要求1至7中任一项的多级MEMS光开关单元,所述S为正整数;所述第一多级MEMS开关阵列,用于将所述输入端准直器阵列输出的光束,通过所述透镜映射至所述第二多级MEMS开关阵列;所述第二多级MEMS开关阵列,包括T个第二多级MEMS光开关单元,所述第二多级MEMS光开关单元如权利要求1至7中任一项的多级MEMS光开关单元,所述T为正整数;所述第二多级MEMS开关阵列,用于将来自所述第一多级MEMS光开关阵列的光束输出至所述输出端准直器阵列;所述输出端准直器阵列,用于对从所述第二多级MEMS开关阵列输出的光束进行准直;所述输出端光纤阵列,用于光束耦合输出。
- 根据权利要求9所述的光交叉装置,其特征在于,所述输入端光纤阵列,包括:S个输入端口,每个输入端口位置布局与所述第一多级MEMS光开关单元的映射位置一一对应;所述输出端光纤阵列,包括:T个输出端口,其中,每个输出端口位置布局与所述第二多级MEMS光开关单元的映射位置一一对应;每个所述第一多级MEMS光开关单元可切换波束至T个方向,所述第一多级MEMS光开关单元的排布方式通过所述第二多级MEMS光开关单元的切换方向和切换角度,以及透镜焦距确定;每个所述第二多级MEMS光开关单元可切换波束至S个方向,所述第二多级MEMS光开关单元的排布方式通过所述第一多级MEMS光开关单元的切换方向和切换角度,以及透镜焦距确定。
- 根据权利要求10所述的光交叉装置,其特征在于,所述S等于所述T。
- 根据权利要求10所述的光交叉装置,其特征在于,所述多级MEMS光开关单元在所述多级MEMS开关阵列上的排布方式为环状分布。
- 根据权利要求12所述的光交叉装置,其特征在于,所述多级MEMS开关阵列中的当前多级MEMS光开关单元切换至目标多级MEMS光开关单元时,光束切换采用直线切换路径、或者折线切换路径或者弧形切换路径。
- 根据权利要求13所述的光交叉装置,其特征在于,所述折线切换路径包括:两步的直线切换路径,所述两步的直线切换路径经过所述多级MEMS开关阵列的中心点位置。
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