WO2019082333A1 - 電子部品 - Google Patents

電子部品

Info

Publication number
WO2019082333A1
WO2019082333A1 PCT/JP2017/038697 JP2017038697W WO2019082333A1 WO 2019082333 A1 WO2019082333 A1 WO 2019082333A1 JP 2017038697 W JP2017038697 W JP 2017038697W WO 2019082333 A1 WO2019082333 A1 WO 2019082333A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic component
block
insulating
heat
component according
Prior art date
Application number
PCT/JP2017/038697
Other languages
English (en)
French (fr)
Inventor
紀男 高津
Original Assignee
新電元工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新電元工業株式会社 filed Critical 新電元工業株式会社
Priority to US16/636,609 priority Critical patent/US11201101B2/en
Priority to JP2019549770A priority patent/JP6810279B2/ja
Priority to PCT/JP2017/038697 priority patent/WO2019082333A1/ja
Priority to CN201780096191.8A priority patent/CN111406316B/zh
Publication of WO2019082333A1 publication Critical patent/WO2019082333A1/ja

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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to an electronic component having a base and an electronic element provided in a sealing portion.
  • the cooling body such as the heat sink and the electronic component It has been necessary to provide an insulating portion such as an insulating plate, an insulating sheet or the like between them. However, providing the insulating portion in this manner reduces the manufacturing efficiency.
  • the present invention has been made in view of such a point, and provides an electronic component that does not need to have an insulating portion such as an insulating sheet between it and a cooling body such as a heat sink even on a surface that performs a heat dissipation function. Do.
  • the electronic component according to concept 1 of the invention is Base and An electronic device provided on one side of the base; A connector provided on one side of the electronic device; A heat dissipation block provided on one side of the connection body; An insulating portion provided between the connection body and the heat radiation block; A sealing portion that seals the electronic element, the connection body, and the insulating portion; Equipped with At least a portion of the other side surface of the base is exposed from the sealing portion, At least a part of the surface on one side of the heat dissipation block may be exposed from the sealing portion.
  • the tip of the connector has a recess,
  • the insulating portion may be provided in the recess.
  • the heat dissipating block has a heat dissipating block body and an extending portion extending from the heat dissipating block body to the other side.
  • the extension portion is provided on one side of the tip portion of the connection body, The surface on one side of the heat dissipating block body may be exposed from the sealing portion.
  • the tip of the connector has a recess, The insulating portion and the extending portion may be provided in the recess.
  • the insulating portion may be a heat dissipating insulating sheet or a heat dissipating insulating material.
  • the insulating portion may be an elastic member having heat dissipating insulation.
  • the insulating portion may have a thickness which is 1/5 to 1/1 of the thickness of the tip portion of the connection body.
  • connection body 9 In an electronic component according to any one of the concepts 1 to 8 of the invention The proximal end portion of the connection body may abut on one surface of the terminal exposed outward from the sealing portion via a conductive adhesive.
  • connection body In an electronic component according to any one of the concepts 1 to 10 of the invention
  • the base, the heat dissipation block and the connection body may be made of the same material.
  • the insulating portion is provided between the connection body provided on one side of the electronic element and the heat radiation block, and the heat radiation block and the electronic element are insulated. For this reason, the surface on the side of the heat radiation block which performs the heat radiation function can be directly mounted on a cooling body such as a heat sink.
  • FIG. 1 is a side sectional view of an electronic component that can be used in the first embodiment of the present invention.
  • FIG. 2 is a side cross-sectional view of an electronic component that can be used in Modification 1 of the first embodiment of the present invention.
  • FIG. 3 is a side cross-sectional view of an electronic component that can be used in Modification 2 of the first embodiment of the present invention.
  • FIG. 4 is a side cross-sectional view of an electronic component that can be used in Modification 3 of the first embodiment of the present invention.
  • FIG. 5 is a side sectional view showing an electronic component and a cooling body which can be used in the first embodiment of the present invention.
  • FIG. 6 is a side cross-sectional view of an electronic component that can be used in Modification 4 of the first embodiment of the present invention.
  • FIG. 7 is a side sectional view of the electronic component that can be used in the first embodiment of the present invention when a thick insulating portion is employed.
  • FIG. 8 is a front sectional view of an electronic component that can be used in the first embodiment of the present invention, as viewed from the right side of FIG.
  • FIG. 9 is a side cross-sectional view of an electronic component that can be used in the second embodiment of the present invention.
  • FIG. 10 is a front sectional view of an electronic component that can be used in the second embodiment of the present invention, as viewed from the right side of FIG.
  • FIG. 11 is a perspective view of an electronic component that can be used in the third embodiment of the present invention.
  • FIG. 8 is a front sectional view of an electronic component that can be used in the first embodiment of the present invention, as viewed from the right side of FIG.
  • FIG. 9 is a side cross-sectional view of an electronic component that can be used in the second embodiment of the present invention.
  • FIG. 10 is a front sectional
  • FIG. 12 is a perspective view of an electronic component that can be used in a modification of the third embodiment of the present invention.
  • FIG. 13 is a front sectional view showing an example of an electronic component that can be used in the third embodiment of the present invention.
  • FIG. 14 is a front sectional view showing another example of the electronic component that can be used in the third embodiment of the present invention.
  • FIG. 15 is a front sectional view of an electronic component that can be used in the fourth embodiment of the present invention.
  • FIG. 16 is a front cross-sectional view of an electronic component that can be used in a modification of the fourth embodiment of the present invention.
  • the electronic component of the present embodiment is, for example, an electronic device or an electronic module.
  • a semiconductor device can be mentioned, for example, and a semiconductor module can be mentioned as an electronic module.
  • the electronic device of the present embodiment is typically a semiconductor device, and may be, for example, a switching device formed of a semiconductor such as MOSFET or IGBT, or may be a capacitor or the like.
  • One side of the present embodiment means the upper side of FIG. 1, and the other type means the lower side of FIG.
  • a plane whose normal direction is the vertical direction in FIG. 1 that is, the direction including the direction on one side and the direction on the other side
  • surface direction a plane whose normal direction is the vertical direction in FIG. 1 (that is, the direction including the direction on one side and the direction on the other side) is referred to as “surface direction”.
  • the electronic component includes a base 10, an electronic element 20 provided on one side of the base 10, a connector 30 provided on one side of the electronic element 20, and one side of the connector 30.
  • a heat dissipation block 40 provided in the housing, an insulating portion 50 provided between the connection body 30 and the heat dissipation block 40, and a sealing portion 90 for sealing the electronic element 20, the connection body 30, and the insulating portion 50; You may have. At least a portion of the other surface of the base 10 may be exposed from the sealing portion 90. At least a part of the surface on one side of the heat dissipation block 40 may be exposed from the sealing portion 90.
  • a conductive adhesive 80 such as a solder may be provided between the surface on one side of the base 10 and the surface on the other side of the electronic element 20.
  • a conductive adhesive 80 such as solder may be provided also between the surface on one side of the electronic element 20 and the surface on the other side of the tip portion 32 of the connector 30.
  • At least a part of the other side of the base 10 may be exposed from the sealing portion 90, but not only a part of the other side of the base 10 but the whole may be exposed from the sealing 90 It is also good. It is stated that at least a part of the surface on one side of the heat dissipation block 40 may be exposed from the sealing portion 90, but not only a part but one part of the surface on one side of the heat dissipation block 40 is exposed from the sealing portion 90 May be
  • the base 10 includes the base main body 12 and a base protrusion 11 that protrudes from the base main body 12 to the other side.
  • the other surface of the base protrusion 11 may be exposed from the sealing portion 90.
  • the heat release block 40 protrudes to one side from the heat release block body 42 and the heat release block body 42
  • the heat dissipating block protrusion 41 may be provided, and the surface on one side of the heat dissipating block protrusion 41 may be exposed from the sealing portion 90.
  • the tip 32 of the connector 30 may be bent to the other side via the bending portion 31.
  • the insulating portion 50 and the heat radiation block 40 may be provided at the tip portion 32.
  • the heat dissipation block 40 may be formed in a cylindrical shape or a substantially rectangular parallelepiped.
  • a substantially cuboid means a mode in which two sides facing each other are arranged in parallel, such as a mode in which corner portions are rounded.
  • the substantially cube means an aspect which is configured of a hexahedron, and in which two opposing faces are arranged in parallel, and in which the size of each face is the same, like the substantially rectangular parallelepiped, For example, an aspect in which the corner is rounded is included.
  • the insulating unit 50 may be a heat dissipating insulating sheet or a heat dissipating insulating material.
  • a heat dissipation insulation sheet the high thermal conductivity sheet which filled fillers, such as alumina, aluminum nitride, and boron nitride, in silicon as an example can be mentioned.
  • an epoxy resin containing fillers such as alumina, aluminum nitride, and boron nitride, a silicone resin, a urethane resin, etc. can be mentioned as an example.
  • the insulating unit 50 may be an elastic member having heat radiation insulation.
  • silicon rubber containing a filler such as alumina, aluminum nitride, boron nitride and the like can be mentioned.
  • the insulating portion 50 may have a thickness of 1 ⁇ 5 to 1/1 of the thickness of the tip portion 32 of the connector 30, or more specifically, may have a thickness of 1 ⁇ 3 to 1 ⁇ 2. By increasing the thickness of the insulating portion 50, the insulation withstand voltage can be increased.
  • the proximal end 33 of the connector 30 may be connected to one or more terminals 35 exposed outward from the sealing portion 90. Further, the base end 33 of the connection body 30 is in contact with one surface of the base end 36 of the terminal 35 exposed outward from the sealing portion 90 through the conductive adhesive 80 such as solder. It is also good. However, the connection body 30 and the terminal 35 may not be separated as described above, and as shown in FIG. 4, the base end portion 33 of the connection body 30 may be integrated with the terminal 35. Alternatively, the proximal end 33 of the connector 30 may extend in the surface direction and protrude from the side surface of the sealing portion 90.
  • the proximal end portion 33 of the connection body 30 and the plurality of terminals 35 are connected, the plurality of terminals 35 are arranged side by side in the front and back direction of the paper surface of FIG. And the proximal end 33 of the connector 30 may be abutted via a conductive adhesive 80 such as solder (see FIGS. 11 and 12). Further, the base end portion 33 of the connection body 30 and the plurality of terminals 35 may be integrally formed, and in this case as well, the plurality of terminals 35 are arranged side by side in the plane of FIG. It may be like this.
  • only the heat dissipation block 40 may be exposed from one side of the sealing portion 90.
  • the base 10, the heat radiation block 40 and the connector 30 may be made of the same material.
  • each of the base 10, the heat dissipation block 40, and the connector 30 may be made of copper or a metal containing copper.
  • the insulating portion 50 when the insulating portion 50 is provided between the connection body 30 provided on one side of the electronic element 20 and the heat radiation block 40, and the heat radiation block 40 and the electronic element 20 are insulated.
  • the surface on the side of the heat dissipating block 40 that performs the heat dissipating function can be directly mounted on the cooling body 110 such as a heat sink.
  • the heat radiation insulating sheet, the heat radiation insulating material, or the like may be provided between the heat sink and the cooling body such as the heat sink.
  • the insulating portion 50 can be positioned in the planar direction by utilizing the bending portion 31. From this point of view, as shown in FIG. 3, the side surface (left side surface in FIG. 3) of the insulating portion 50 on the bending portion 31 side abuts on the bending portion 31, thereby positioning the insulating portion 50 in the surface direction It is beneficial to be done.
  • the heat radiation block 40 is configured as a substantially rectangular parallelepiped or a substantially cube, it is advantageous in that the heat radiation block 40 can be easily mounted on the tip 32 bent to the other side in the manufacturing process. It is.
  • the size in the surface direction of the heat dissipation block 40 is larger than the size in the surface direction of the tip portion 32 of the connection body 30, and the heat dissipation block 40 faces from the tip portion 32 of the connection body 30.
  • the size may extend in the direction.
  • the insulation part 50 is comprised from a thermal radiation insulation sheet, it is useful at the point which can implement
  • the insulating portion 50 is formed of an elastic member having heat radiation insulation, it is advantageous in that high heat radiation can be realized while maintaining the insulation.
  • the insulating portion 50 and the heat radiating block 40 can be mounted on the tip portion 32 of the connection body 30 while pressing the insulating portion 50 by the heat radiating block 40 in the manufacturing process. It is useful. That is, when the insulating portion 50 is formed of an elastic member, even if the heat dissipation block 40 slightly protrudes to one side of the mold for pouring the sealing resin constituting the sealing portion 90, The sealing resin can be poured into the mold while the heat radiation block 40 is pressed by the mold.
  • the heat dissipation block 40 may slightly protrude from the thickness direction of the mold due to manufacturing errors such as individual differences, it is advantageous in that the electronic component can be manufactured without any particular trouble.
  • the fillers contained in the insulating portion 50 can be brought close to each other by pushing the insulating portion 50 in this manner, and the thermal conductivity can be further enhanced.
  • the heat radiation block 40 is designed to slightly protrude in the thickness direction from the mold (sealing part 90) into which the sealing resin is poured. You may As described above, by causing the heat dissipation block 40 to slightly protrude, the insulating portion 50 can be pushed in, the fillers included in the insulating portion 50 can be made to be close to each other, and the thermal conductivity can be further enhanced. . In addition, to "extend slightly” means, for example, to extend at a height of 1/10 or less of the thickness of the insulating portion 50.
  • the insulating portion 50 when the insulating portion 50 is formed of an elastic member having a heat insulating property, as shown in FIG. 7, it is also possible to use the elastic force as described above by thickening the insulating portion 50. it can. Therefore, in such an embodiment, it is useful that the insulating portion 50 has a thickness of 1/3 to 1/2 of the thickness of the tip portion 32 of the connector 30.
  • heat generation from the electronic element 20 is performed only through the heat path through the insulating portion 50 and the heat dissipation block 40. Can dissipate heat.
  • a heat dissipating insulating material such as a heat dissipating insulating sheet, a heat dissipating insulating material, an elastic member having a heat dissipating insulating property, or the like is adopted as the insulating portion 50, it is advantageous in that heat generation from the electronic element 20 can be performed more efficiently. is there.
  • the rates of thermal expansion and contraction due to heat applied in the manufacturing process should be made to coincide with the base 10, the heat radiation block 40 and the connection body 30.
  • the heat radiation block 40 has a heat radiation block body 42 and an extension 43 extending from the heat radiation block body 42 to the other side.
  • the extension portion 43 is provided at the distal end portion 32 of the connection body 30.
  • the surface on one side of the heat dissipating block body 42 is exposed from the sealing portion 90.
  • the exposed surface of the heat dissipation block main portion 42 from the sealing portion 90 is made large. can do. Therefore, it is useful in that high heat dissipation can be realized.
  • the area in the surface direction of the extension portion 43 is the tip portion of the connector 30. It may be smaller than 32. By making the area in the surface direction of the extending portion 43 smaller than the tip end portion 32 of the connecting member 30 as described above, it is advantageous in that the extending portion 43 and the connecting member 30 can be prevented from coming in contact with each other. .
  • the area in the surface direction of the extension portion 43 may be larger than the tip portion 32 of the connector 30, but in this case, one of the extension portions 43 The part will protrude from the tip 32 in the surface direction on the opposite side to the bent part 31 (right side in FIG. 9) (see the reference numeral 43 shown by the dotted line in FIG. 9).
  • the distal end portion 32 of the connection body 30 has a recess 130.
  • the insulating portion 50 may be provided in the recess 130.
  • not only the insulating portion 50 but also the extending portion 43 of the heat radiation block 40 may be provided in the recess 130.
  • a gap is provided between the extension 43 and the tip 32 of the connector 30 so that they do not contact each other.
  • the insulating portion 50 can be reliably positioned with respect to the distal end portion 32 of the connection body 30. For this reason, the manufacturing process of an electronic component can be made easy.
  • the recess 130 may be formed by tapping the tip 32.
  • the convex portion 131 as shown in FIG. 11 can be formed on the other surface of the distal end portion 32.
  • the recessed part 130 is provided, the aspect in which the convex part 131 is not provided can also be employ
  • the surface on the other side of the heat radiation block 40 has a roughened surface.
  • Any configuration adopted in each of the above embodiments can be adopted in the fourth embodiment.
  • the members described in each of the above embodiments will be described with the same reference numerals.
  • the roughened surface provided on the other surface of the heat radiation block 40 may have a form having a fine uneven shape 140.
  • Such fine asperity shape 140 may be formed by sandblasting.
  • the insulating block 50 made of a heat dissipation insulation sheet, a heat dissipation insulating elastic material, or the like by the heat dissipation block 40 is a surface direction It is useful in that it can prevent shifting.
  • the surface on the other side of the extension portion 43 of the heat dissipation block 40 has fine irregularities 140, and the heat dissipation block main portion 42
  • the surface on the other side of may not have an uneven shape.
  • the surface of the other side of the thermal radiation block main-body part 42 may have uneven

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

電子部品は、ベース１０と、前記ベース１０の一方側に設けられた電子素子２０と、電子素子２０の一方側に設けられた接続体３０と、前記接続体３０の一方側に設けられた放熱ブロック４０と、前記接続体３０と前記放熱ブロック４０との間に設けられた絶縁部５０と、前記電子素子２０、前記接続体３０及び前記絶縁部５０を封止する封止部９０と、を有する。前記ベース１０の他方側の面の少なくとも一部は前記封止部９０から露出する。前記放熱ブロック４０の一方側の面の少なくとも一部は前記封止部９０から露出する。

Description

電子部品
　本発明は、封止部内に設けられたベース及び電子素子を有する電子部品に関する。
　従来から、電子装置、電子モジュール等の電子部品において、放熱効率を上げるために金属基板等の裏面を露出させ、絶縁シート等の絶縁部を介してヒートシンク等に載置することが行われている。両面から放熱する電子部品も知られており、例えば特開２０１６－１００４７９号公報では、半導体チップと、半導体チップを封止する封止樹脂体と、半導体チップの第１主面側に配置され、第１主電極と電気的に接続される第１導体板（第１ヒートシンク）と、半導体チップの第２主面側に配置され、第２主電極と電気的に接続される第２導体板（第２ヒートシンク）が設けられている。そして、第一基板及び第二基板の各々は絶縁板を介して冷却器に当接している。
　従来から用いられている態様では、電子部品の封止部内に含まれる半導体素子等の電子素子と導体板とが電気的に接続されていることから、ヒートシンクのような冷却体と電子部品との間に絶縁板、絶縁シート等の絶縁部を設ける必要があった。しかしながら、このように絶縁部を設けることは製造効率を下げることになってしまう。
　本発明は、このような点を鑑みてなされたものであり、放熱機能を果たす面であっても絶縁シート等の絶縁部をヒートシンク等の冷却体との間に設ける必要がない電子部品を提供する。
［概念１］
　本発明の概念１による電子部品は、
　ベースと、
　前記ベースの一方側に設けられた電子素子と、
　電子素子の一方側に設けられた接続体と、
　前記接続体の一方側に設けられた放熱ブロックと、
　前記接続体と前記放熱ブロックとの間に設けられた絶縁部と、
　前記電子素子、前記接続体及び前記絶縁部を封止する封止部と、
　を備え、
　前記ベースの他方側の面の少なくとも一部が前記封止部から露出し、
　前記放熱ブロックの一方側の面の少なくとも一部が前記封止部から露出してもよい。
［概念２］
　本発明の概念１による電子部品において、
　前記接続体の先端部は屈曲部を介して他方側に曲げられ、
　前記先端部の一方側に前記絶縁部が設けられてもよい。
［概念３］
　本発明の概念１又は２による電子部品において、
　前記接続体の先端部は凹部を有し、
　前記凹部内に前記絶縁部が設けられてもよい。
［概念４］
　本発明の概念１乃至３のいずれか１つによる電子部品において、
　前記放熱ブロックは、放熱ブロック本体部と、前記放熱ブロック本体部から他方側に延びた延在部とを有し、
　前記延在部は前記接続体の先端部の一方側に設けられ、
　前記放熱ブロック本体部の一方側の面は前記封止部から露出してもよい。
［概念５］
　本発明の概念４による電子部品において、
　前記接続体の先端部は凹部を有し、
　前記凹部内に前記絶縁部及び前記延在部が設けられてもよい。
［概念６］
　本発明の概念１乃至５のいずれか１つによる電子部品において、
　前記絶縁部は放熱絶縁シート又は放熱絶縁材料であってもよい。
［概念７］
　本発明の概念１乃至６のいずれか１つによる電子部品において、
　前記絶縁部は放熱絶縁性を有する弾性部材であってもよい。
［概念８］
　本発明の概念７による電子部品において、
　前記絶縁部は、前記接続体の先端部の厚みの１／５～１／１の厚みを有してもよい。
［概念９］
　本発明の概念１乃至８のいずれか１つによる電子部品において、
　前記接続体の基端部は、前記封止部から外方に露出する端子の一方側の面に導電性接着剤を介して当接してもよい。
［概念１０］
　本発明の概念１乃至９のいずれか１つによる電子部品において、
　前記封止部の一方側から前記放熱ブロックだけが露出してもよい。
［概念１１］
　本発明の概念１乃至１０のいずれか１つによる電子部品において、
　前記ベース、前記放熱ブロック及び前記接続体は同じ材料からなってもよい。
［概念１２］
　本発明の概念１乃至１１のいずれか１つによる電子部品において、
　前記放熱ブロックの他方側の面は荒らし面を有してもよい。
　本発明によれば、電子素子の一方側に設けられた接続体と放熱ブロックとの間に絶縁部が設けられており、放熱ブロックと電子素子とは絶縁されている。このため、放熱機能を果たす放熱ブロック側の面をヒートシンクのような冷却体に直接載置することができる。
図１は、本発明の第１の実施の形態で用いられうる電子部品の側方断面図である。 図２は、本発明の第１の実施の形態の変形例１で用いられうる電子部品の側方断面図である。 図３は、本発明の第１の実施の形態の変形例２で用いられうる電子部品の側方断面図である。 図４は、本発明の第１の実施の形態の変形例３で用いられうる電子部品の側方断面図である。 図５は、本発明の第１の実施の形態で用いられうる電子部品及び冷却体を示した側方断面図である。 図６は、本発明の第１の実施の形態の変形例４で用いられうる電子部品の側方断面図である。 図７は、本発明の第１の実施の形態で用いられうる電子部品において厚みの厚い絶縁部を採用した際の側方断面図である。 図８は、本発明の第１の実施の形態で用いられうる電子部品を図１の右側方向から見た前方断面図である。 図９は、本発明の第２の実施の形態で用いられうる電子部品の側方断面図である。 図１０は、本発明の第２の実施の形態で用いられうる電子部品を図９の右側方向から見た前方断面図である。 図１１は、本発明の第３の実施の形態で用いられうる電子部品の斜視図である。 図１２は、本発明の第３の実施の形態の変形例で用いられうる電子部品の斜視図である。 図１３は、本発明の第３の実施の形態で用いられうる電子部品の一例を示した前方断面図である。 図１４は、本発明の第３の実施の形態で用いられうる電子部品の別の例を示した前方断面図である。 図１５は、本発明の第４の実施の形態で用いられうる電子部品の前方断面図である。 図１６は、本発明の第４の実施の形態の変形例で用いられうる電子部品の前方断面図である。
第１の実施の形態
《構成》
　以下、本実施の形態の電子部品について説明する。本実施の形態の電子部品は、例えば電子装置又は電子モジュールである。電子装置としては例えば半導体装置を挙げることができ、電子モジュールとしては半導体モジュールを挙げることができる。また、本実施の形態の電子素子は典型的には半導体素子であり、例えばＭＯＳＦＥＴやＩＧＢＴ等の半導体からなるスイッチング素子であってもよいし、コンデンサ等であってもよい。本実施の形態の一方側とは図１の上方側を意味し、他方型とは図１の下方側を意味する。図１の上下方向（すなわち一方側の方向及び他方側の方向を含む方向）を法線方向とする面を、本実施の形態では「面方向」という。
　図１に示すように、電子部品は、ベース１０と、ベース１０の一方側に設けられた電子素子２０と、電子素子２０の一方側に設けられた接続体３０と、接続体３０の一方側に設けられた放熱ブロック４０と、接続体３０と放熱ブロック４０との間に設けられた絶縁部５０と、電子素子２０、接続体３０及び絶縁部５０を封止する封止部９０と、を有してもよい。ベース１０の他方側の面の少なくとも一部は封止部９０から露出してもよい。放熱ブロック４０の一方側の面の少なくとも一部が封止部９０から露出してもよい。
　ベース１０の一方側の面と電子素子２０の他方側の面との間には、はんだ等の導電性接着剤８０が設けられてもよい。電子素子２０の一方側の面と接続体３０の先端部３２の他方側の面との間にも、はんだ等の導電性接着剤８０が設けられてもよい。
　ベース１０の他方側の面の少なくとも一部は封止部９０から露出してもよいと述べたが、ベース１０の他方側の面の一部だけではなく全部が封止部９０から露出してもよい。放熱ブロック４０の一方側の面の少なくとも一部は封止部９０から露出してもよいと述べたが放熱ブロック４０の一方側の面の一部だけではなく全部が封止部９０から露出してもよい。
　ベース１０の他方側の面の一部だけが露出する場合には、例えば図２に示すように、ベース１０は、ベース本体部１２と、ベース本体部１２から他方側に突出したベース突出部１１とを有し、当該ベース突出部１１の他方側の面が封止部９０から露出されるようにしてもよい。
　放熱ブロック４０の一方側の面の一部だけが露出する場合には、例えば図３に示すように、放熱ブロック４０は、放熱ブロック本体部４２と、放熱ブロック本体部４２から一方側に突出した放熱ブロック突出部４１を有し、当該放熱ブロック突出部４１の一方側の面が封止部９０から露出されるようにしてもよい。
　接続体３０の先端部３２は屈曲部３１を介して他方側に曲げられてもよい。先端部３２には、絶縁部５０及び放熱ブロック４０が設けられてもよい。
　放熱ブロック４０は円柱形状又は略直方体から構成されてもよい。本実施の形態において、略直方体とは、六面体から構成され、対向する２面が平行に配置されている態様を意味し、例えば角部が丸みを帯びているような態様も含まれている。略立方体とは、六面体から構成され、対向する２面が平行に配置されている態様であって、各面の大きさが同じ大きさからなっている態様を意味し、略直方体と同様に、例えば角部が丸みを帯びているような態様も含まれている。
　絶縁部５０は、放熱絶縁シート又は放熱絶縁材料であってもよい。放熱絶縁シートとしては、一例として、アルミナ、窒化アルミニウム、窒化ホウ素等のフィラーをシリコンに充填した高熱伝導性シートを挙げることができる。放熱絶縁材料としては、一例として、アルミナ、窒化アルミニウム、窒化ホウ素等のフィラーを含有するエポキシ樹脂、シリコン樹脂、ウレタン樹脂等を挙げることができる。
　絶縁部５０は放熱絶縁性を有する弾性部材であってもよい。一例としては、アルミナ、窒化アルミニウム、窒化ホウ素等のフィラーを含有するシリコンゴム等を挙げることができる。
　絶縁部５０は、接続体３０の先端部３２の厚みの１／５～１／１の厚みとしてもよく、より限定するならば１／３～１／２の厚みを有してもよい。絶縁部５０の厚みを厚くすることで絶縁耐量を上げることができる。
　図１乃至図３に示すように、接続体３０の基端部３３は封止部９０から外方に露出する一つ又は複数の端子３５に接続されてもよい。また、接続体３０の基端部３３は、封止部９０から外方に露出する端子３５の基端部３６の一方側の面にはんだ等の導電性接着剤８０を介して当接されてもよい。但し、このように接続体３０と端子３５とが別体になっておらず、図４に示すように、接続体３０の基端部３３が端子３５と一体に構成されてもよい。また、接続体３０の基端部３３が面方向で延在して、封止部９０の側面から突出するように構成されてもよい。
　接続体３０の基端部３３と複数の端子３５とが接続される場合には、複数の端子３５が面方向の図１の紙面表裏方向に並んで配置され、これら複数の端子３５の一方側の面と接続体３０の基端部３３とがはんだ等の導電性接着剤８０を介して当接されてもよい（図１１及び図１２参照）。また、接続体３０の基端部３３と複数の端子３５とが一体に構成されてもよく、この場合にも、複数の端子３５が面方向の図１の紙面表裏方向に並んで配置されるようになってもよい。
　本実施の形態の電子部品において、放熱ブロック４０だけが封止部９０の一方側から露出するようにしてもよい。
　ベース１０、放熱ブロック４０及び接続体３０は同じ材料から構成されてもよい。一例としては、ベース１０、放熱ブロック４０及び接続体３０の各々が銅又は銅を含有する金属から構成されてもよい。
《作用・効果》
　次に、上述した構成からなる本実施の形態による作用・効果の一例について説明する。なお、「作用・効果」で説明するあらゆる態様を、上記構成で採用することができる。
　本発明において、電子素子２０の一方側に設けられた接続体３０と放熱ブロック４０との間に絶縁部５０が設けられ、放熱ブロック４０と電子素子２０とが絶縁されている態様を採用した場合には、図５に示すように、放熱機能を果たす放熱ブロック４０側の面をヒートシンクのような冷却体１１０に直接載置することができる。このため、電子部品と冷却体１１０との間に、別途、放熱絶縁シートや放熱絶縁材料等をヒートシンクのような冷却体との間に設ける必要がなくなり、設計自由度を高めることができる点で有益である。なお、本実施の形態のような電子部品を用いる場合であっても、放熱絶縁シートや放熱絶縁材料等をヒートシンクのような冷却体との間に設けてもよい。
　図１等に示すように、接続体３０の先端部３２が屈曲部３１を介して他方側に曲げられ、先端部３２に絶縁部５０及び放熱ブロック４０が設けられる態様を採用した場合には、屈曲部３１を利用して、絶縁部５０を面方向で位置決めすることができる点で有益である。この観点から言うと、図３に示すように、絶縁部５０の屈曲部３１側の側面（図３の左側面）が屈曲部３１に当接し、このことによって、絶縁部５０の面方向の位置決めが行われることが有益である。
　放熱ブロック４０が略直方体又は略立方体から構成されている態様を採用した場合には、製造工程において放熱ブロック４０を容易に他方側に曲げられた先端部３２に載置することができる点で有益である。
　図８に示すように、放熱ブロック４０の面方向の大きさが、接続体３０の先端部３２の面方向の大きさよりも大きくなっており、放熱ブロック４０が接続体３０の先端部３２から面方向ではみ出る大きさとなってもよい。
　絶縁部５０が放熱絶縁シートから構成される場合には、絶縁性を維持しつつ、高い放熱性を実現できる点で有益である。また、絶縁部５０が放熱絶縁材料から構成される場合にも、絶縁性を維持しつつ、高い放熱性を実現できる点で有益である。
　絶縁部５０が放熱絶縁性を有する弾性部材から構成される場合にも、絶縁性を維持しつつ、高い放熱性を実現できる点で有益である。この効果に加え、本態様を採用した場合には、製造工程において、放熱ブロック４０によって絶縁部５０を押し付けつつ、接続体３０の先端部３２に絶縁部５０及び放熱ブロック４０を載置できる点で有益である。つまり、絶縁部５０が弾性部材から構成される場合には、放熱ブロック４０が封止部９０を構成する封止樹脂を流し込むための金型よりも一方側に多少はみ出すことになったとしても、金型によって放熱ブロック４０を押し込みつつ、封止樹脂を金型内に流し込むことができる。このため、個体差等の製造誤差によって、放熱ブロック４０が金型の厚み方向から多少はみ出すことがあったとしても、特に支障なく電子部品を製造できる点で有益である。また、このように絶縁部５０を押し込むことで絶縁部５０内に含まれるフィラー同士を近接させることができ、熱伝導性をより高めることもできる。
　絶縁部５０として放熱絶縁性を有する弾性部材を用いる場合には、図６に示すように、封止樹脂を流し込む金型（封止部９０）から厚み方向で放熱ブロック４０が多少はみ出すように設計してもよい。このように放熱ブロック４０が多少はみ出させることで、絶縁部５０を押し込むことができ、絶縁部５０内に含まれるフィラー同士を近接させることができ、熱伝導性をより高めることもできるようになる。なお、多少はみ出すとは、例えば、絶縁部５０の厚みの１／１０以下の高さではみ出すことを意味している。
　特に絶縁部５０が放熱絶縁性を有する弾性部材から構成される場合には、図７に示すように、絶縁部５０の厚みを厚くすることで、その弾性力を前述したように利用することもできる。このため、このような態様では絶縁部５０が、接続体３０の先端部３２の厚みの１／３～１／２の厚みを有していることは有益である。
　接続体３０の基端部３３が、封止部９０から外方に露出する端子３５の一方側の面にはんだ等の導電性接着剤８０を介して当接される態様を採用した場合には、封止樹脂で封止する際に用いられる金型で接続体３０の先端部３２側が押されることで基端部３３側が仮に浮き上がったとしても、端子３５自体が浮き上がることがない点で有益である。
　電子部品において、封止部９０の一方側から放熱ブロック４０だけが露出する態様を採用する場合には、電子素子２０からの発熱を、絶縁部５０及び放熱ブロック４０を介した熱経路だけを介して放熱させることができる。特に絶縁部５０として放熱絶縁性のもの、例えば放熱絶縁シート、放熱絶縁材料又は放熱絶縁性を有する弾性部材等を採用した場合には、電子素子２０からの発熱をより効率よく行える点で有益である。
　ベース１０、放熱ブロック４０及び接続体３０が同じ材料から構成される場合には、製造工程において加わる熱による熱膨張や熱収縮の割合を、これらベース１０、放熱ブロック４０及び接続体３０で合わせることができる。このため、例えば、ベース１０と接続体３０との間の熱膨張や熱収縮の割合を合わせることで、ベース１０と接続体３０との間の導電性接着剤８０にクラックが入ることを防止できる点で有益である。また、接続体３０と放熱ブロック４０との間の熱膨張や熱収縮の割合を合わせることで、接続体３０と放熱ブロック４０との間でずれが発生することを防止できる点で有益である。
第２の実施の形態
　次に、本発明の第２の実施の形態について説明する。
　本実施の形態では、図９に示すように、放熱ブロック４０が、放熱ブロック本体部４２と、放熱ブロック本体部４２から他方側に延びた延在部４３とを有している。延在部４３は接続体３０の先端部３２に設けられている。放熱ブロック本体部４２の一方側の面は封止部９０から露出する態様となっている。その他については、第１の実施の形態と同様であり、第１の実施の形態で採用したあらゆる構成を第２の実施の形態でも採用することができる。第１の実施の形態で説明した部材に対しては同じ符号を付して説明する。
　本実施の形態のような延在部４３を設けることで、延在部４３を接続体３０の先端部３２に載置しつつ、放熱ブロック本体部４２における封止部９０からの露出面を大きくすることができる。このため、高い放熱性を実現できる点で有益である。
　また、延在部４３を接続体３０の先端部３２に載置するという観点から言うと、図９及び図１０に示すように、延在部４３の面方向の面積は接続体３０の先端部３２よりも小さくなってもよい。このように延在部４３の面方向の面積を接続体３０の先端部３２よりも小さくすることで、延在部４３と接続体３０とが接触してしまうことを防止できる点で有益である。なお、このような態様に限られることはなく、延在部４３の面方向の面積は接続体３０の先端部３２よりも大きくなってもよいが、この場合には、延在部４３の一部は屈曲部３１と反対側（図９の右側）で先端部３２から面方向ではみ出ることになる（図９の点線で示した符号４３参照）。
第３の実施の形態
　次に、本発明の第３の実施の形態について説明する。
　本実施の形態では、図１１及び図１２に示すように、接続体３０の先端部３２が凹部１３０を有している。図１３に示すように凹部１３０内に絶縁部５０が設けられる構成となってもよい。また、図１４に示すように、凹部１３０内に絶縁部５０だけではなく、放熱ブロック４０の延在部４３が設けられてもよい。なお、図１４に示す態様では、延在部４３と接続体３０の先端部３２との間に間隙が設けられており、これらが互いに接触しないようになっている。上記各実施の形態で採用したあらゆる構成を第３の実施の形態でも採用することができる。上記各実施の形態で説明した部材に対しては同じ符号を付して説明する。
　本実施の形態のように凹部１３０を設けることで、絶縁部５０を接続体３０の先端部３２に対して確実に位置決めすることができる。このため、電子部品の製造工程を容易なものにすることができる。
　凹部１３０は先端部３２を叩くことで形成されてもよい。このような製造工程を採用する場合には、凹部１３０を形成することで、先端部３２の他方側の面には図１１に示すような凸部１３１を形成することができる。また、図１２に示すように、凹部１３０は設けられているものの、凸部１３１が設けられていない態様を採用することもできる。
第４の実施の形態
　次に、本発明の第４の実施の形態について説明する。
　本実施の形態では、図１５に示すように放熱ブロック４０の他方側の面は荒らし面を有している。上記各実施の形態で採用したあらゆる構成を第４の実施の形態でも採用することができる。上記各実施の形態で説明した部材に対しては同じ符号を付して説明する。
　放熱ブロック４０の他方側の面に設けられる荒らし面は、細かな凹凸形状１４０を有する態様でも良い。このような細かな凹凸形状１４０は、サンドブラストを行うことで形成されてもよい。本実施の形態のように放熱ブロック４０の他方側の面が荒らし面となっている場合には、放熱ブロック４０によって、放熱絶縁シートや放熱絶縁性の弾性材料等からなる絶縁部５０が面方向ずれてしまうことを防止できる点で有益である。
　なお、放熱ブロック４０が延在部４３を有する態様では、図１６に示すように、放熱ブロック４０の延在部４３の他方側の面が細かな凹凸形状１４０を有し、放熱ブロック本体部４２の他方側の面は凹凸形状を有していなくてもよい。また、このような態様に限られることはなく、放熱ブロック本体部４２の他方側の面は凹凸形状を有してもよい。
　上述した各実施の形態の記載及び図面の開示は、請求の範囲に記載された発明を説明するための一例に過ぎず、上述した実施の形態の記載又は図面の開示によって請求の範囲に記載された発明が限定されることはない。また、出願当初の請求項の記載はあくまでも一例であり、明細書、図面等の記載に基づき、請求項の記載を適宜変更することもできる。
１０　　　　ベース
２０　　　　電子素子
３０　　　　接続体
３１　　　　屈曲部
３２　　　　先端部
３５　　　　端子
４０　　　　放熱ブロック
４２　　　　放熱ブロック本体部
４３　　　　延在部
５０　　　　絶縁部
８０　　　　導電性接着剤
９０　　　　封止部
１３０　　　凹部
 
 
 

Claims (12)

  1. 　ベースと、
    　前記ベースの一方側に設けられた電子素子と、
    　電子素子の一方側に設けられた接続体と、
    　前記接続体の一方側に設けられた放熱ブロックと、
    　前記接続体と前記放熱ブロックとの間に設けられた絶縁部と、
    　前記電子素子、前記接続体及び前記絶縁部を封止する封止部と、
    　を備え、
    　前記ベースの他方側の面の少なくとも一部は前記封止部から露出し、
    　前記放熱ブロックの一方側の面の少なくとも一部は前記封止部から露出することを特徴とする電子部品。
  2. 　前記接続体の先端部は屈曲部を介して他方側に曲げられ、
    　前記先端部の一方側に前記絶縁部が設けられることを特徴とする請求項１に記載の電子部品。
  3. 　前記接続体の先端部は凹部を有し、
    　前記凹部内に前記絶縁部が設けられることを特徴とする請求項１に記載の電子部品。
  4. 　前記放熱ブロックは、放熱ブロック本体部と、前記放熱ブロック本体部から他方側に延びた延在部とを有し、
    　前記延在部は前記接続体の先端部の一方側に設けられ、
    　前記放熱ブロック本体部の一方側の面は前記封止部から露出することを特徴とする請求項１に記載の電子部品。
  5. 　前記接続体の先端部は凹部を有し、
    　前記凹部内に前記絶縁部及び前記延在部が設けられることを特徴とする請求項４に記載の電子部品。
  6. 　前記絶縁部は放熱絶縁シート又は放熱絶縁材料であることを特徴とする請求項１に記載の電子部品。
  7. 　前記絶縁部は放熱絶縁性を有する弾性部材であることを特徴とする請求項１に記載の電子部品。
  8. 　前記絶縁部は、前記接続体の先端部の厚みの１／５～１／１の厚みを有することを特徴とする請求項７に記載の電子部品。
  9. 　前記接続体の基端部は、前記封止部から外方に露出する端子の一方側の面に導電性接着剤を介して当接することを特徴とする請求項１に記載の電子部品。
  10. 　前記封止部の一方側から前記放熱ブロックだけが露出していることを特徴とする請求項１に記載の電子部品。
  11. 　前記ベース、前記放熱ブロック及び前記接続体は同じ材料からなることを特徴とする請求項１に記載の電子部品。
  12. 　前記放熱ブロックの他方側の面は荒らし面を有することを特徴とする請求項１に記載の電子部品。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021001924A1 (ja) * 2019-07-02 2021-11-11 三菱電機株式会社 パワーモジュールおよびその製造方法
WO2024116933A1 (ja) * 2022-12-02 2024-06-06 ローム株式会社 半導体装置、および、半導体装置の製造方法
US12014974B2 (en) 2019-07-02 2024-06-18 Mitsubishi Electric Corporation Power module with electrodes and heat sink and manufacturing method therefor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074035A (ja) * 2011-09-27 2013-04-22 Mitsubishi Electric Corp 半導体装置の製造方法
JP2014060325A (ja) * 2012-09-19 2014-04-03 Micro Module Technology Co Ltd 半導体装置
JP2016018979A (ja) * 2014-07-11 2016-02-01 株式会社デンソー モールドパッケージ
JP2016105523A (ja) * 2016-03-10 2016-06-09 三菱電機株式会社 半導体装置及びその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH064595Y2 (ja) * 1988-02-24 1994-02-02 日本電気株式会社 ハイブリッドｉｃ
JP2000183277A (ja) * 1998-12-17 2000-06-30 Toshiba Corp 半導体装置
JP4019993B2 (ja) * 2003-03-31 2007-12-12 株式会社デンソー 半導体装置
JP4450230B2 (ja) * 2005-12-26 2010-04-14 株式会社デンソー 半導体装置
JP5024289B2 (ja) * 2006-05-30 2012-09-12 国産電機株式会社 樹脂封止型半導体装置及びこの半導体装置を用いた電子装置
CN201000882Y (zh) * 2007-01-17 2008-01-02 上海旭福电子有限公司 内嵌导热绝缘体具散热片的新型半导体器件封装结构
US8472193B2 (en) * 2008-07-04 2013-06-25 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device
JP5383621B2 (ja) * 2010-10-20 2014-01-08 三菱電機株式会社 パワー半導体装置
JP2012119488A (ja) * 2010-11-30 2012-06-21 Sanken Electric Co Ltd 半導体装置の製造方法及び半導体装置
JP5649142B2 (ja) * 2011-04-05 2015-01-07 パナソニック株式会社 封止型半導体装置及びその製造方法
JP5891616B2 (ja) * 2011-06-28 2016-03-23 日産自動車株式会社 半導体装置
JP5488541B2 (ja) * 2011-07-04 2014-05-14 株式会社デンソー 半導体装置
CN102892277B (zh) * 2011-07-20 2016-08-03 光宝电子(广州)有限公司 电路板装置及其制造方法及具有该电路板装置的电源供应器
JP2013070026A (ja) * 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
CN104011853B (zh) * 2011-12-26 2016-11-09 三菱电机株式会社 电力用半导体装置及其制造方法
US9466548B2 (en) * 2012-02-22 2016-10-11 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device
JP2013214549A (ja) * 2012-03-30 2013-10-17 Toshiba Corp 半導体装置及びそれを用いたユニット
JP6048238B2 (ja) * 2012-06-04 2016-12-21 株式会社デンソー 電子装置
JP6165025B2 (ja) * 2013-10-31 2017-07-19 三菱電機株式会社 半導体モジュール
JP6344215B2 (ja) 2014-11-21 2018-06-20 株式会社デンソー 半導体装置及びパワーモジュール
JP2016131196A (ja) * 2015-01-13 2016-07-21 トヨタ自動車株式会社 半導体装置
DE102015111204B4 (de) * 2015-07-10 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Modul mit Lastanschlusselementen

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074035A (ja) * 2011-09-27 2013-04-22 Mitsubishi Electric Corp 半導体装置の製造方法
JP2014060325A (ja) * 2012-09-19 2014-04-03 Micro Module Technology Co Ltd 半導体装置
JP2016018979A (ja) * 2014-07-11 2016-02-01 株式会社デンソー モールドパッケージ
JP2016105523A (ja) * 2016-03-10 2016-06-09 三菱電機株式会社 半導体装置及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021001924A1 (ja) * 2019-07-02 2021-11-11 三菱電機株式会社 パワーモジュールおよびその製造方法
EP3996133A4 (en) * 2019-07-02 2022-07-13 Mitsubishi Electric Corporation POWER MODULE AND MANUFACTURING METHOD THEREOF
JP7204919B2 (ja) 2019-07-02 2023-01-16 三菱電機株式会社 パワーモジュールおよびその製造方法
US12014974B2 (en) 2019-07-02 2024-06-18 Mitsubishi Electric Corporation Power module with electrodes and heat sink and manufacturing method therefor
WO2024116933A1 (ja) * 2022-12-02 2024-06-06 ローム株式会社 半導体装置、および、半導体装置の製造方法

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