WO2019029112A1 - Method of uniformly controlling temperature of large-area flexible substrate - Google Patents
Method of uniformly controlling temperature of large-area flexible substrate Download PDFInfo
- Publication number
- WO2019029112A1 WO2019029112A1 PCT/CN2017/119660 CN2017119660W WO2019029112A1 WO 2019029112 A1 WO2019029112 A1 WO 2019029112A1 CN 2017119660 W CN2017119660 W CN 2017119660W WO 2019029112 A1 WO2019029112 A1 WO 2019029112A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- flexible substrate
- temperature
- heat receiving
- receiving layer
- heating
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Definitions
- the present application relates to the field of electronic material technology, and in particular, to a method for uniformly controlling the temperature of a large-area flexible substrate.
- the general flexible substrate coating adopts the "Roll to Roll” technology, that is, the flexible metal foil or the organic film substrate is completed by a film forming process such as magnetron sputtering and vacuum evaporation in a continuous manner in a roll.
- the “Roll-to-Roll” production process not only improves production efficiency, but also improves automation, reduces human operation and management factors, and is less affected by environmental conditions (temperature, humidity, cleanliness, etc.). Consistent and stable dimensional deviations are also easy to correct and compensate, so it has higher product yield, quality and reliability.
- substrate heating is required in general film processing, but due to the special winding method of the “Roll to Roll” process, the film deposition process is generally suspended and continuous between the two rollers.
- the substrate in the transmission is carried out, so that non-contact infrared radiation heating is mostly used.
- large-area flexible substrates such as metal foils and organic films are relatively complex in composition and poor in surface topography.
- the unevenness of surface materials after radiant heating causes differences in the heat absorbed in different denatured regions, resulting in Severe non-uniformity of the film layer on the two-dimensional scale of the substrate.
- the purpose of the present application is to provide a method for uniformly controlling the temperature of a large-area flexible substrate to solve the above problems in the prior art, to uniformly heat the flexible substrate, thereby ensuring the film layer on the two-dimensional scale of the flexible substrate. Uniformity.
- the present application provides a method for uniformly controlling the temperature of a large-area flexible substrate, which includes the following steps:
- the temperature of the heating unit at the sampling position is controlled based on the radiation coefficient obtained by the sampling measurement.
- controlling the radiation coefficient of the heat-receiving layer within a set range specifically includes:
- the emissivity of the heat receiving layer is controlled by controlling process parameters of the deposition apparatus.
- the heating mode of the heating unit is infrared non-contact heating
- the set range is based on infrared emission of an actual infrared heating device The spectrum is determined.
- the material of the heat receiving layer is aluminum, copper, iron, nickel, molybdenum, tungsten, lead, zinc, titanium.
- the heat receiving layer has a thickness ranging from 50 to 1000 nm.
- sampling and measuring the radiation coefficient of the heat receiving layer at the heating unit specifically includes:
- an emissivity detecting unit in the process chamber Measuring, by an emissivity detecting unit in the process chamber, an emissivity coefficient corresponding to a characteristic peak wavelength of an infrared emission spectrum of the actual infrared heating device;
- the detection result is fed back to the heating control unit to calculate a correction to control the temperature of the heating unit by the heating control unit.
- the heating unit and the radiation coefficient detecting unit are each provided with a plurality of, and the plurality of the heating units and the plurality of The positions of the radiation coefficient detecting units are in one-to-one correspondence.
- the infrared emission spectrum characteristic peak wavelength value of the actual infrared heating device is from 0.75 to 300 um.
- the method for uniformly controlling the temperature of a large-area flexible substrate provided by the present application, by processing the heat receiving layer on the flexible substrate and accurately matching the heating temperature according to the radiation coefficient of the heat receiving layer, so that the flexible substrate can be everywhere Uniform heat is obtained to ensure uniformity of the film layer on the flexible substrate.
- FIG. 1 is a flow chart of a method for uniformly controlling a temperature of a large-area flexible substrate according to an embodiment of the present application
- FIG. 2 is a schematic diagram of a heat receiving layer in a method for uniformly controlling a temperature of a large-area flexible substrate according to an embodiment of the present application;
- Figure 3 is a simplified process diagram of temperature control for a flexible substrate.
- an embodiment of the present application provides a method for uniformly controlling a temperature of a large-area flexible substrate, which includes the following steps:
- the heat receiving layer 4 can be formed on the heat receiving surface 2 of the flexible substrate 3, and the radiation coefficient of the heat receiving layer 4 can be controlled within a set range, since the emissivity of the material is related to its ability to absorb heat energy, Therefore, the precise control of the emissivity can realize the control of the heat absorption capability of the heat receiving layer 4, thereby ensuring the uniformity of heating of the flexible substrate 3; then, the emissivity of the heat receiving layer 4 at the heating unit 1 can be sampled and measured, Since the emissivity value may be any value within a set value range, and different emissivity factors result in different heat transfer capabilities, heat reception at the heating unit 1 may be performed in order to make the heat absorption throughout the heat receiving layer 4 uniform.
- the flexible substrate 3 needs to be fed from the deposition chamber 5, and discharged from the process chamber 6, wherein the heat receiving layer 4 can be formed in the deposition chamber 5 with a heat receiving layer.
- the flexible substrate 3 of 4 can continue to be heated and output in the process chamber 6; therefore, in order to ensure that the emissivity of the heat receiving layer 4 can be controlled within a set range before entering the process chamber 6, the specific control method can be Yes:
- the emissivity of the heat receiving layer 4 is controlled by controlling the manufacturing process parameters of the deposition apparatus, such as controlling the power, pressure and oxygen partial pressure of the deposition apparatus.
- the heating mode of the heating unit 1 may be non-contact infrared heating, and the above set range may be determined according to the infrared emission spectrum of the actual infrared heating device.
- the characteristic peak wavelength of the infrared emission spectrum has a specific wavelength range.
- the specific wavelength range is 0.75-300 um, wherein the characteristic peak wavelength value of the infrared emission spectrum can be within the specific wavelength range. Selected; in the present embodiment, it is preferable that the infrared emission spectrum characteristic peak wavelength value is 2 um.
- an emission coefficient detecting unit 7 may be disposed in the process chamber 6 to detect a peak corresponding to the characteristic peak wavelength of the infrared emission spectrum of the actual infrared heating device.
- the radiation coefficient is fed back to the heating control unit to calculate the correction to control the temperature of the heating unit 1 by the heating control unit, so that the temperature can be precisely matched according to the radiation coefficient, so that uniform heat can be obtained everywhere on the flexible substrate 3.
- the uniformity of the film layer on the flexible substrate 3 is ensured.
- the heating control unit can be a heating controller.
- the heating unit 1 and the radiation coefficient detecting unit 7 may be provided in plurality, and the plurality of radiation coefficient detecting units 7 may be in one-to-one correspondence with the plurality of heating units 1, thereby ensuring The radiation coefficients of the respective position regions on the heat receiving layer 4 are sampled and measured to achieve accurate temperature matching, and the uniformity of heat absorption of the heat receiving layer 4 as a whole is ensured.
- the radiation coefficient detecting unit 7 may be an on-line spectrophotometer.
- the heating unit 1 in order to ensure the uniformity of heating of the heating regions by the heating unit 1, a distance needs to be maintained between the heating unit 1 and the heat receiving layer 4. In the present embodiment, it is preferred that the heating unit 1 to heat receive The distance of layer 4 is greater than 5 cm.
- the material of the heat receiving layer 4 may be an oxide of one of aluminum, copper, iron, nickel, molybdenum, tungsten, lead, zinc, titanium or a mixture of oxides thereof, preferably, The material of the heat receiving layer 4 is molybdenum oxide.
- the heat receiving layer 4 is formed by reacting the metal source in an oxygen-containing environment by one of magnetron sputtering, vacuum evaporation, and atomic layer deposition.
- the heat receiving layer 4 has a set thickness range value.
- the thickness of the heat receiving layer 4 is in the range of 50- 1000nm.
- the method for uniformly controlling the temperature of a large-area flexible substrate provided by the embodiments of the present application, by processing the heat receiving layer on the flexible substrate, and accurately matching the heating temperature according to the radiation coefficient of the heat receiving layer, so that each of the flexible substrates is made Uniform heat is obtained to ensure uniformity of the film on the flexible substrate.
- the method for uniformly controlling the temperature of a large-area flexible substrate provided by the present application, by processing the heat receiving layer on the flexible substrate and accurately matching the heating temperature according to the radiation coefficient of the heat receiving layer, so that the flexible substrate can be everywhere Obtaining uniform heat to ensure the uniformity of the film layer on the flexible substrate, which is a problem in today's society which is plagued by the problem that the surface of the photovoltaic module substrate is uneven and the surface morphology is poor. A particularly urgent need for creation.
Abstract
A method of uniformly controlling the temperature of a large-area flexible substrate (3), comprising the following steps: forming a heat absorbing layer (4) on a heat absorbing surface (2) of a flexible substrate (3), and controlling the radiation coefficient of the heat absorbing layer (4) to a set range; performing sampling measurement for the radiation coefficient of the heat absorbing layer (4) at a heating unit (1); and controlling the temperature of the heating unit (1) at a sampling position according to the radiation coefficient obtained from the sampling measurement.
Description
本申请涉及电子材料技术领域，尤其涉及一种用于均匀控制大面积柔性衬底温度的方法。The present application relates to the field of electronic material technology, and in particular, to a method for uniformly controlling the temperature of a large-area flexible substrate.
在目前的光伏、光热、平板显示等领域，为满足市场对产品外观和功能多样化的需求，对于功能薄膜涂层的沉积多采用柔性衬底镀膜技术。目前一般柔性衬底镀膜采用“Roll to Roll”技术，即柔性金属箔或有机薄膜衬底通过成卷连续的方式进行磁控溅射、真空蒸发等镀膜制程完成。采用“Roll-to-Roll”生产工艺，不仅可以提高生产效率，还可以提高自动化程度、减少人为操作和管理因素，受环境条件(温度、湿度及洁净度等)影响变化小，因而具有更均匀一致和稳定的尺寸偏差，从而也易于进行修正和补偿，所以它具有更高的产品合格率、质量和可靠性。In the current fields of photovoltaic, photothermal, flat panel display, etc., in order to meet the market demand for product appearance and function diversification, flexible substrate coating technology is often used for the deposition of functional film coatings. At present, the general flexible substrate coating adopts the "Roll to Roll" technology, that is, the flexible metal foil or the organic film substrate is completed by a film forming process such as magnetron sputtering and vacuum evaporation in a continuous manner in a roll. The “Roll-to-Roll” production process not only improves production efficiency, but also improves automation, reduces human operation and management factors, and is less affected by environmental conditions (temperature, humidity, cleanliness, etc.). Consistent and stable dimensional deviations are also easy to correct and compensate, so it has higher product yield, quality and reliability.
一般膜层制程工艺中为了获得高质量的材料特性，都需要进行衬底加热，但是由于“Roll to Roll”工艺的特殊卷绕方式，膜层沉积过程一般都在两个滚轴间悬空并且连续传动中的衬底上进行，因此大多采用非接触式的红外辐射加热方式。但大面积柔性衬底如金属箔和有机薄膜在成分上相对比较复杂、表面形貌均一性较差，辐射加热后表面材料不均匀的变性引起在不同变性区域吸收的热量存有差异，从而引起膜层在衬底二维尺度上的严重不均匀性。In order to obtain high-quality material properties, substrate heating is required in general film processing, but due to the special winding method of the “Roll to Roll” process, the film deposition process is generally suspended and continuous between the two rollers. The substrate in the transmission is carried out, so that non-contact infrared radiation heating is mostly used. However, large-area flexible substrates such as metal foils and organic films are relatively complex in composition and poor in surface topography. The unevenness of surface materials after radiant heating causes differences in the heat absorbed in different denatured regions, resulting in Severe non-uniformity of the film layer on the two-dimensional scale of the substrate.
发明内容Summary of the invention
本申请的目的是提供一种用于均匀控制大面积柔性衬底温度的方法，以解决上述现有技术中问题，使柔性衬底均匀受热，进而保证膜层在柔性衬底二维尺度上的均匀性。The purpose of the present application is to provide a method for uniformly controlling the temperature of a large-area flexible substrate to solve the above problems in the prior art, to uniformly heat the flexible substrate, thereby ensuring the film layer on the two-dimensional scale of the flexible substrate. Uniformity.
本申请提供了一种用于均匀控制大面积柔性衬底温度的方法，其中，包括如下步骤：The present application provides a method for uniformly controlling the temperature of a large-area flexible substrate, which includes the following steps:
在柔性衬底的受热面上形成热接收层，并将所述热接收层的辐射系数控制在设定的范围内；Forming a heat receiving layer on the heat receiving surface of the flexible substrate, and controlling the radiation coefficient of the heat receiving layer within a set range;
采样测量所述热接收层在加热单元处的辐射系数；Sampling and measuring an emissivity coefficient of the heat receiving layer at the heating unit;
根据采样测量获得的辐射系数对采样位置处的加热单元的温度进行控制。The temperature of the heating unit at the sampling position is controlled based on the radiation coefficient obtained by the sampling measurement.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，将所述热接收层的辐射系数控制在设定的范围内具体包括：The method for uniformly controlling the temperature of the large-area flexible substrate as described above, wherein, preferably, controlling the radiation coefficient of the heat-receiving layer within a set range specifically includes:
通过控制沉积设备的制程工艺参数，以对所述热接收层的辐射系数进行控制。The emissivity of the heat receiving layer is controlled by controlling process parameters of the deposition apparatus.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，加热单元的加热方式为红外非接触式加热，且所述设定的范围根据实际红外加热装置的红外发射波谱确定。The method for uniformly controlling the temperature of a large-area flexible substrate as described above, wherein, preferably, the heating mode of the heating unit is infrared non-contact heating, and the set range is based on infrared emission of an actual infrared heating device The spectrum is determined.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，所述热接收层的材料为铝、铜、铁、镍、钼、钨、铅、锌、钛中其中一种的氧化物或其中多种的氧化物的混合物。The method for uniformly controlling the temperature of a large-area flexible substrate as described above, wherein, preferably, the material of the heat receiving layer is aluminum, copper, iron, nickel, molybdenum, tungsten, lead, zinc, titanium. An oxide or a mixture of oxides of a plurality thereof.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，所述热接收层通过磁控溅射、真空蒸发和原子层沉积中的一种处理方式对金属源在含氧环境下进行反应后形成。The method for uniformly controlling the temperature of a large-area flexible substrate as described above, wherein, preferably, the heat-receiving layer is treated by a metal source in one of magnetron sputtering, vacuum evaporation, and atomic layer deposition It is formed after the reaction is carried out in an oxygen-containing environment.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，所述热接收层的厚度范围值为50-1000nm。The method for uniformly controlling the temperature of a large-area flexible substrate as described above, wherein it is preferable that the heat receiving layer has a thickness ranging from 50 to 1000 nm.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，采样测量所述热接收层在加热单元处的辐射系数具体包括：The method for uniformly controlling the temperature of the large-area flexible substrate as described above, wherein, preferably, sampling and measuring the radiation coefficient of the heat receiving layer at the heating unit specifically includes:
通过工艺腔室中的辐射系数检测单元检测与所述实际红外加热装置的红外发射波谱特征峰波长对应的辐射系数；Measuring, by an emissivity detecting unit in the process chamber, an emissivity coefficient corresponding to a characteristic peak wavelength of an infrared emission spectrum of the actual infrared heating device;
将检测结果反馈给加热控制单元计算修正，以通过所述加热控制单元控制所述加热单元的温度。The detection result is fed back to the heating control unit to calculate a correction to control the temperature of the heating unit by the heating control unit.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，所述加热单元与所述辐射系数检测单元均设置有多个，且多个所述加热单元与多个所述辐射系数检测单元的位置一一对应。a method for uniformly controlling a temperature of a large-area flexible substrate as described above, wherein, preferably, the heating unit and the radiation coefficient detecting unit are each provided with a plurality of, and the plurality of the heating units and the plurality of The positions of the radiation coefficient detecting units are in one-to-one correspondence.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，所述加热单元到所述热接收层的距离大于5cm。The method for uniformly controlling the temperature of a large-area flexible substrate as described above, wherein preferably, the distance from the heating unit to the heat receiving layer is greater than 5 cm.
如上所述的用于均匀控制大面积柔性衬底温度的方法，其中，优选的是，所述实际红外加热装置的红外发射波谱特征峰波长范围值为0.75-300um。The method for uniformly controlling the temperature of a large-area flexible substrate as described above, wherein it is preferable that the infrared emission spectrum characteristic peak wavelength value of the actual infrared heating device is from 0.75 to 300 um.
本申请提供的用于均匀控制大面积柔性衬底温度的方法，通过在柔性衬底上加工热接收层，并根据热接收层的辐射系数精确匹配加热温度，使柔性衬底上的各处可以获得均匀的热量，保证膜层在柔性衬底上的均匀性。The method for uniformly controlling the temperature of a large-area flexible substrate provided by the present application, by processing the heat receiving layer on the flexible substrate and accurately matching the heating temperature according to the radiation coefficient of the heat receiving layer, so that the flexible substrate can be everywhere Uniform heat is obtained to ensure uniformity of the film layer on the flexible substrate.
图1为本申请实施例提供的用于均匀控制大面积柔性衬底温度的方法的流程图；1 is a flow chart of a method for uniformly controlling a temperature of a large-area flexible substrate according to an embodiment of the present application;
图2为本申请实施例提供的用于均匀控制大面积柔性衬底温度的方法中热接收层的示意图；2 is a schematic diagram of a heat receiving layer in a method for uniformly controlling a temperature of a large-area flexible substrate according to an embodiment of the present application;
图3为对柔性衬底温度控制的工艺简图。Figure 3 is a simplified process diagram of temperature control for a flexible substrate.
附图标记说明：Description of the reference signs:
1-加热单元 2-受热面 3-柔性衬底1-heating unit 2-heated surface 3-flexible substrate
4-热接收层 5-沉积腔室 6-工艺腔室4-heat receiving layer 5-deposition chamber 6-process chamber
7-辐射系数检测单元7-radiation coefficient detection unit
下面详细描述本申请的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能解释为对本申请的限制。The embodiments of the present application are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are intended to be illustrative only, and are not to be construed as limiting.
请同时参照图1至图3，本申请实施例提供了一种用于均匀控制大面积柔性衬底温度的方法，其包括如下步骤：Referring to FIG. 1 to FIG. 3 simultaneously, an embodiment of the present application provides a method for uniformly controlling a temperature of a large-area flexible substrate, which includes the following steps:
首先，可以在柔性衬底3的受热面2上形成热接收层4，并将热接收层4的辐射系数控制在设定的范围内，由于材料的辐射系数与其对热能的 吸收能力相关联，故对辐射系数的精确控制可以实现对热接收层4吸热能力的控制，进而保证对柔性衬底3加热的均匀性；然后，可以采样测量热接收层4在加热单元1处的辐射系数，由于辐射系数值可以是在设定数值范围内的任意值，且不同的辐射系数导致传热能力不同，故为了使热接收层4各处的吸热均匀，可以在加热单元1处的热接收层4上采集测量若干位置的辐射系数，并根据采集的辐射系数匹配合适的加热温度，即，根据采样测量获得的若干位置的辐射系数对采样位置处相应的加热单元1的温度进行控制，从而可以解决现有技术中，由于大面积柔性衬底3如金属箔和有机薄膜在成分上相对比较复杂、表面形貌均一性较差，导致在材料各处吸收的热量存在差异，引起膜层在衬底上的严重不均匀的问题。First, the heat receiving layer 4 can be formed on the heat receiving surface 2 of the flexible substrate 3, and the radiation coefficient of the heat receiving layer 4 can be controlled within a set range, since the emissivity of the material is related to its ability to absorb heat energy, Therefore, the precise control of the emissivity can realize the control of the heat absorption capability of the heat receiving layer 4, thereby ensuring the uniformity of heating of the flexible substrate 3; then, the emissivity of the heat receiving layer 4 at the heating unit 1 can be sampled and measured, Since the emissivity value may be any value within a set value range, and different emissivity factors result in different heat transfer capabilities, heat reception at the heating unit 1 may be performed in order to make the heat absorption throughout the heat receiving layer 4 uniform. Collecting the radiation coefficients of the plurality of positions on the layer 4, and matching the appropriate heating temperature according to the collected radiation coefficients, that is, controlling the temperature of the corresponding heating unit 1 at the sampling position according to the radiation coefficients of the plurality of positions obtained by the sampling measurement, thereby It can solve the prior art, because the large-area flexible substrate 3 such as metal foil and organic film is relatively complex in composition and surface topography uniformity. Poor, leading to differences in heat absorption throughout the material, causing a serious problem of non-uniform film on the substrate.
如图3所示，柔性衬底3需要从沉积腔室5中进料，从工艺腔室6中出料，其中，热接收层4可以在沉积腔室5中成型，而带有热接收层4的柔性衬底3可以继续在工艺腔室6中加热后输出；故为了在进入工艺腔室6之前，保证热接收层4的辐射系数可以控制在设定的范围内，其具体控制方法可以是：通过控制沉积设备的制成工艺参数，比如控制沉积设备的电源功率、压强及氧分压等，以对热接收层4的辐射系数进行控制。As shown in FIG. 3, the flexible substrate 3 needs to be fed from the deposition chamber 5, and discharged from the process chamber 6, wherein the heat receiving layer 4 can be formed in the deposition chamber 5 with a heat receiving layer. The flexible substrate 3 of 4 can continue to be heated and output in the process chamber 6; therefore, in order to ensure that the emissivity of the heat receiving layer 4 can be controlled within a set range before entering the process chamber 6, the specific control method can be Yes: The emissivity of the heat receiving layer 4 is controlled by controlling the manufacturing process parameters of the deposition apparatus, such as controlling the power, pressure and oxygen partial pressure of the deposition apparatus.
需要说明的是，加热单元1的加热方式可以为非接触式的红外加热，且上述设定的范围可以根据实际红外加热装置的红外发射波谱确定。具体地，红外发射波谱特征峰波长具有特定的波长范围，在本实施例中，该特定的波长范围值为0.75-300um，其中，红外发射波谱特征峰波长值可以在该特定的波长范围值内选定；在本实施例中，优选的是，红外发射波谱特征峰波长值为2um。It should be noted that the heating mode of the heating unit 1 may be non-contact infrared heating, and the above set range may be determined according to the infrared emission spectrum of the actual infrared heating device. Specifically, the characteristic peak wavelength of the infrared emission spectrum has a specific wavelength range. In this embodiment, the specific wavelength range is 0.75-300 um, wherein the characteristic peak wavelength value of the infrared emission spectrum can be within the specific wavelength range. Selected; in the present embodiment, it is preferable that the infrared emission spectrum characteristic peak wavelength value is 2 um.
具体地，为了便于对到达加热单元1处的热接收层4进行采样，在工艺腔室6中可以设置有辐射系数检测单元7，以检测与实际红外加热装置的红外发射波谱特征峰波长对应的辐射系数；再将检测结果反馈给加热控制单元计算修正，以通过加热控制单元控制加热单元1的温度，从而可以根据辐射系数精确匹配温度，使柔性衬底3上的各处可以获得均匀的热量，保证膜层在柔性衬底3上的均匀性。其中，加热控制单元可以为加热控制器。Specifically, in order to facilitate sampling of the heat receiving layer 4 reaching the heating unit 1, an emission coefficient detecting unit 7 may be disposed in the process chamber 6 to detect a peak corresponding to the characteristic peak wavelength of the infrared emission spectrum of the actual infrared heating device. The radiation coefficient is fed back to the heating control unit to calculate the correction to control the temperature of the heating unit 1 by the heating control unit, so that the temperature can be precisely matched according to the radiation coefficient, so that uniform heat can be obtained everywhere on the flexible substrate 3. The uniformity of the film layer on the flexible substrate 3 is ensured. Wherein, the heating control unit can be a heating controller.
需要说明的是，如图3所示，加热单元1与辐射系数检测单元7均可以设置有若干个，且若干个辐射系数检测单元7可以与若干个加热单元1一一对应，从而可以保证对热接收层4上的各个位置区域的辐射系数进行采样测量，实现温度的精确匹配，保证热接收层4整体吸热的均匀性。其中，辐射系数检测单元7可以为在线式分光光度计。It should be noted that, as shown in FIG. 3, the heating unit 1 and the radiation coefficient detecting unit 7 may be provided in plurality, and the plurality of radiation coefficient detecting units 7 may be in one-to-one correspondence with the plurality of heating units 1, thereby ensuring The radiation coefficients of the respective position regions on the heat receiving layer 4 are sampled and measured to achieve accurate temperature matching, and the uniformity of heat absorption of the heat receiving layer 4 as a whole is ensured. The radiation coefficient detecting unit 7 may be an on-line spectrophotometer.
可以理解的是，为了保证加热单元1对各个加热区域加热的均匀性，加热单元1与热接收层4之间需保持有距离，在本实施例中，优选的是，加热单元1到热接收层4的距离大于5cm。It can be understood that in order to ensure the uniformity of heating of the heating regions by the heating unit 1, a distance needs to be maintained between the heating unit 1 and the heat receiving layer 4. In the present embodiment, it is preferred that the heating unit 1 to heat receive The distance of layer 4 is greater than 5 cm.
进一步地，热接收层4的材料可以为铝、铜、铁、镍、钼、钨、铅、锌、钛中其中一种的氧化物或其中多种的氧化物的混合物，优选的是，该热接收层4的材料为氧化钼。Further, the material of the heat receiving layer 4 may be an oxide of one of aluminum, copper, iron, nickel, molybdenum, tungsten, lead, zinc, titanium or a mixture of oxides thereof, preferably, The material of the heat receiving layer 4 is molybdenum oxide.
具体的，在沉积腔中，热接收层4通过磁控溅射、真空蒸发和原子层沉积中的一种处理方式对金属源在含氧环境下进行反应后形成。Specifically, in the deposition chamber, the heat receiving layer 4 is formed by reacting the metal source in an oxygen-containing environment by one of magnetron sputtering, vacuum evaporation, and atomic layer deposition.
如图2所示，为了充分实现热接收层的热处理性能，该热接收层4具有设定的厚度范围值，优选的是，在本实施例中，热接收层4的厚度范围值为50-1000nm。As shown in FIG. 2, in order to fully realize the heat treatment performance of the heat receiving layer, the heat receiving layer 4 has a set thickness range value. Preferably, in the present embodiment, the thickness of the heat receiving layer 4 is in the range of 50- 1000nm.
本申请实施例提供的用于均匀控制大面积柔性衬底温度的方法，通过在柔性衬底上加工热接收层，并根据热接收层的辐射系数精确匹配加热温度，使柔性衬底上的各处可以获得均匀的热量，保证膜层在柔性衬底上的均匀性。The method for uniformly controlling the temperature of a large-area flexible substrate provided by the embodiments of the present application, by processing the heat receiving layer on the flexible substrate, and accurately matching the heating temperature according to the radiation coefficient of the heat receiving layer, so that each of the flexible substrates is made Uniform heat is obtained to ensure uniformity of the film on the flexible substrate.
以上依据图式所示的实施例详细说明了本申请的构造、特征及作用效果，以上所述仅为本申请的较佳实施例，但本申请不以图面所示限定实施范围，凡是依照本申请的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本申请的保护范围内。The structure, features and effects of the present application are described in detail above with reference to the embodiments shown in the drawings. The above description is only a preferred embodiment of the present application, but the present application does not limit the implementation scope as shown in the drawings. The changes in the concept of the present application, or equivalent modifications, to equivalent variations, are still within the scope of the present application.
本申请提供的用于均匀控制大面积柔性衬底温度的方法，通过在柔性衬底上加工热接收层，并根据热接收层的辐射系数精确匹配加热温度，使柔性衬底上的各处可以获得均匀的热量，保证膜层在柔性衬底上的均匀性， 这对于被光伏组件衬底表面材料不均匀、表面形貌均一性较差的问题所困扰的当今社会来说，本申请是一种特别急需的创造。The method for uniformly controlling the temperature of a large-area flexible substrate provided by the present application, by processing the heat receiving layer on the flexible substrate and accurately matching the heating temperature according to the radiation coefficient of the heat receiving layer, so that the flexible substrate can be everywhere Obtaining uniform heat to ensure the uniformity of the film layer on the flexible substrate, which is a problem in today's society which is plagued by the problem that the surface of the photovoltaic module substrate is uneven and the surface morphology is poor. A particularly urgent need for creation.
Claims (10)
- 一种用于均匀控制大面积柔性衬底温度的方法，其特征在于，包括如下步骤：A method for uniformly controlling the temperature of a large-area flexible substrate, comprising the steps of:在柔性衬底的受热面上形成热接收层，并将所述热接收层的辐射系数控制在设定的范围内；Forming a heat receiving layer on the heat receiving surface of the flexible substrate, and controlling the radiation coefficient of the heat receiving layer within a set range;采样测量所述热接收层在加热单元处的辐射系数；Sampling and measuring an emissivity coefficient of the heat receiving layer at the heating unit;根据采样测量获得的辐射系数对采样位置处的加热单元的温度进行控制。The temperature of the heating unit at the sampling position is controlled based on the radiation coefficient obtained by the sampling measurement.
- 根据权利要求1所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，将所述热接收层的辐射系数控制在设定的范围内具体包括：The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 1, wherein controlling the radiation coefficient of the heat receiving layer within a set range comprises:通过控制沉积设备的制程工艺参数，以对所述热接收层的辐射系数进行控制。The emissivity of the heat receiving layer is controlled by controlling process parameters of the deposition apparatus.
- 根据权利要求1或2所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，加热单元的加热方式为红外非接触式加热，且所述设定的范围根据实际红外加热装置的红外发射波谱确定。The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 1 or 2, wherein the heating mode of the heating unit is infrared non-contact heating, and the set range is according to an actual infrared heating device. The infrared emission spectrum is determined.
- 根据权利要求1所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，所述热接收层的材料为铝、铜、铁、镍、钼、钨、铅、锌、钛中其中一种的氧化物或其中多种的氧化物的混合物。The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 1, wherein the material of the heat receiving layer is aluminum, copper, iron, nickel, molybdenum, tungsten, lead, zinc, titanium. a mixture of one of the oxides or a plurality of oxides thereof.
- 根据权利要求4所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，所述热接收层通过磁控溅射、真空蒸发和原子层沉积中的一种处理方式对金属源在含氧环境下进行反应后形成。The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 4, wherein the heat receiving layer is treated by a method of magnetron sputtering, vacuum evaporation, and atomic layer deposition on the metal source It is formed after the reaction is carried out in an oxygen-containing atmosphere.
- 根据权利要求5所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，所述热接收层的厚度范围值为50-1000nm。The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 5, wherein the heat receiving layer has a thickness ranging from 50 to 1000 nm.
- 根据权利要求3所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，采样测量所述热接收层在加热单元处的辐射系数具体包括：The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 3, wherein the sampling and measuring the radiation coefficient of the heat receiving layer at the heating unit comprises:通过工艺腔室中的辐射系数检测单元检测与所述实际红外加热装置的红外发射波谱特征峰波长对应的辐射系数；Measuring, by an emissivity detecting unit in the process chamber, an emissivity coefficient corresponding to a characteristic peak wavelength of an infrared emission spectrum of the actual infrared heating device;将检测结果反馈给加热控制单元计算修正，以通过所述加热控制单元 控制所述加热单元的温度。The detection result is fed back to the heating control unit to calculate a correction to control the temperature of the heating unit by the heating control unit.
- 根据权利要求7所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，所述加热单元与所述辐射系数检测单元均设置有多个，且多个所述加热单元与多个所述辐射系数检测单元的位置一一对应。The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 7, wherein the heating unit and the radiation coefficient detecting unit are both provided in plurality, and the plurality of heating units are more The positions of the emissivity detecting units are in one-to-one correspondence.
- 根据权利要求8所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，所述加热单元到所述热接收层的距离大于5cm。The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 8, wherein the distance from the heating unit to the heat receiving layer is greater than 5 cm.
- 根据权利要求3所述的用于均匀控制大面积柔性衬底温度的方法，其特征在于，所述实际红外加热装置的红外发射波谱特征峰波长范围值为0.75-300um。The method for uniformly controlling the temperature of a large-area flexible substrate according to claim 3, wherein the infrared radiation spectrum characteristic peak wavelength range of the actual infrared heating device is 0.75-300 um.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710676708.2A CN107475681B (en) | 2017-08-09 | 2017-08-09 | Method for uniformly controlling temperature of large-area flexible substrate |
| CN201710676708.2 | 2017-08-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2019029112A1 true WO2019029112A1 (en) | 2019-02-14 |
Family
ID=60599794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2017/119660 WO2019029112A1 (en) | 2017-08-09 | 2017-12-29 | Method of uniformly controlling temperature of large-area flexible substrate |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107475681B (en) |
| WO (1) | WO2019029112A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107475681B (en) * | 2017-08-09 | 2020-01-31 | 领凡新能源科技(北京)有限公司 | Method for uniformly controlling temperature of large-area flexible substrate |
| CN110791745B (en) * | 2019-12-12 | 2024-02-13 | 上海超导科技股份有限公司 | Orthogonal radiation auxiliary conduction heating equipment suitable for roll-to-roll continuous strip |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1907897A (en) * | 2005-08-02 | 2007-02-07 | 应用材料公司 | Heating and cooling of substrate support |
| WO2011158525A1 (en) * | 2010-06-17 | 2011-12-22 | 富士電機ホールディングス株式会社 | Manufacturing device for photoelectric conversion element |
| CN103014624A (en) * | 2012-12-18 | 2013-04-03 | 合肥工业大学 | Preparation method of light-absorbing film of solar cell |
| TW201323803A (en) * | 2011-12-13 | 2013-06-16 | Kunshan Jue Chung Electronics Co Ltd | Multi-section type solar collector |
| CN204570026U (en) * | 2015-04-15 | 2015-08-19 | 赫得纳米科技(昆山)有限公司 | The online panel constant temperature heating device of horizontal continuous magnetron sputtering coater |
| CN206204411U (en) * | 2016-07-01 | 2017-05-31 | 应用材料公司 | The depositing device of coating flexible substrate is stacked with layer |
| CN107475681A (en) * | 2017-08-09 | 2017-12-15 | 米亚索乐装备集成（福建）有限公司 | Method for equal control large area flexible underlayer temperature |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9750091B2 (en) * | 2012-10-15 | 2017-08-29 | Applied Materials, Inc. | Apparatus and method for heat treatment of coatings on substrates |
| CN203007382U (en) * | 2012-12-27 | 2013-06-19 | 汉能科技有限公司 | Control system of copper-indium-gallium-diselenide thin film battery |
| CN103911603A (en) * | 2013-01-05 | 2014-07-09 | 光达光电设备科技（嘉兴）有限公司 | Monitoring apparatus, monitoring method and vapor deposition equipment |
| CN104213104B (en) * | 2013-05-31 | 2016-07-13 | 理想晶延半导体设备（上海）有限公司 | The control method of underlayer temperature in chemical vapour deposition (CVD) |
| CN104846346B (en) * | 2015-05-20 | 2017-11-24 | 中国科学院宁波材料技术与工程研究所 | Control method, device and the film deposition equipment of underlayer temperature |
| CN105624636B (en) * | 2016-03-11 | 2019-07-05 | 京东方科技集团股份有限公司 | A kind of parameter adjusting method and system of spatter film forming |
-
2017
- 2017-08-09 CN CN201710676708.2A patent/CN107475681B/en active Active
- 2017-12-29 WO PCT/CN2017/119660 patent/WO2019029112A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1907897A (en) * | 2005-08-02 | 2007-02-07 | 应用材料公司 | Heating and cooling of substrate support |
| WO2011158525A1 (en) * | 2010-06-17 | 2011-12-22 | 富士電機ホールディングス株式会社 | Manufacturing device for photoelectric conversion element |
| TW201323803A (en) * | 2011-12-13 | 2013-06-16 | Kunshan Jue Chung Electronics Co Ltd | Multi-section type solar collector |
| CN103014624A (en) * | 2012-12-18 | 2013-04-03 | 合肥工业大学 | Preparation method of light-absorbing film of solar cell |
| CN204570026U (en) * | 2015-04-15 | 2015-08-19 | 赫得纳米科技(昆山)有限公司 | The online panel constant temperature heating device of horizontal continuous magnetron sputtering coater |
| CN206204411U (en) * | 2016-07-01 | 2017-05-31 | 应用材料公司 | The depositing device of coating flexible substrate is stacked with layer |
| CN107475681A (en) * | 2017-08-09 | 2017-12-15 | 米亚索乐装备集成（福建）有限公司 | Method for equal control large area flexible underlayer temperature |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107475681B (en) | 2020-01-31 |
| CN107475681A (en) | 2017-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Fernández et al. | Radio frequency sputter deposition of high-quality conductive and transparent ZnO: Al films on polymer substrates for thin film solar cells applications | |
| CN1312319C (en) | Transparent conductive film, its forming method and product having same | |
| US11674217B2 (en) | Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell | |
| US9562282B2 (en) | Transparent conductive film and production method therefor | |
| US9570210B2 (en) | Transparent conductive film and production method therefor | |
| CN105821378B (en) | A kind of niobium doping stannic oxide transparent conductive film and preparation method thereof | |
| Raaif et al. | The effect of Cu on the properties of CdO/Cu/CdO multilayer films for transparent conductive electrode applications | |
| WO2014112536A1 (en) | Production method for transparent conductive film | |
| WO2019029112A1 (en) | Method of uniformly controlling temperature of large-area flexible substrate | |
| Tseng | Investigation of post-annealing aluminum-doped zinc oxide (AZO) thin films by a graphene-based heater | |
| CN101820018A (en) | Preparation method of CdS thin-film | |
| Park et al. | Highly flexible indium zinc oxide electrode grown on PET substrate by cost efficient roll-to-roll sputtering process | |
| Kim et al. | Flash lamp annealing of indium tin oxide thin-films deposited on polyimide backplanes | |
| CN101660131B (en) | Method for preparing hydrogenated silicon film by utilizing magnetron sputtering | |
| Kim | Improvement of structural and optoelectrical properties by post-deposition electron beam annealing of ITO thin films | |
| Sakurai et al. | Properties of CuInGaSe2 solar cells based upon an improved three-stage process | |
| CN103824649B (en) | A kind of method utilizing Electromagnetic Heating to optimize transparent conductive oxide film quality | |
| Zhu et al. | Highly transparent conductive F-doped SnO2 films prepared on polymer substrate by radio frequency reactive magnetron sputtering | |
| JP2015096626A (en) | Method for manufacturing czts semiconductor thin film and photoelectric conversion element | |
| Pan et al. | Properties of low-temperature deposited ZnO thin films prepared by cathodic vacuum arc technology on different flexible substrates | |
| CN104505462A (en) | Organic metal halide film and preparation method and application thereof | |
| CN108468019A (en) | A method of transparent conductive film quality is optimized using infrared heating annealing | |
| CN211595770U (en) | Vacuum coating machine and heating device thereof | |
| Wu et al. | Structural and optical properties of Ti-doped ZnO thin films prepared by the cathodic vacuum arc technique with different annealing processes | |
| CN103643211A (en) | Novel AZO thin film preparation deposition process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17920798 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 17920798 Country of ref document: EP Kind code of ref document: A1 |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 17920798 Country of ref document: EP Kind code of ref document: A1 |