WO2019029016A1 - Infrared radiation led light emitting element - Google Patents

Infrared radiation led light emitting element Download PDF

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Publication number
WO2019029016A1
WO2019029016A1 PCT/CN2017/108001 CN2017108001W WO2019029016A1 WO 2019029016 A1 WO2019029016 A1 WO 2019029016A1 CN 2017108001 W CN2017108001 W CN 2017108001W WO 2019029016 A1 WO2019029016 A1 WO 2019029016A1
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WO
WIPO (PCT)
Prior art keywords
infrared radiation
radiation led
sub
encapsulant
element according
Prior art date
Application number
PCT/CN2017/108001
Other languages
French (fr)
Chinese (zh)
Inventor
李兴龙
廖启维
徐宸科
黄永特
Original Assignee
厦门市三安光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 厦门市三安光电科技有限公司 filed Critical 厦门市三安光电科技有限公司
Priority to US16/147,784 priority Critical patent/US10833232B2/en
Publication of WO2019029016A1 publication Critical patent/WO2019029016A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the present invention relates to an infrared radiation LED light-emitting element, and more particularly to an infrared radiation LED light-emitting element with a concentrating/polarizing function lens.
  • LED light-emitting elements are gradually applied in the mobile communication market, iris recognition in the security market, night vision fill light, etc.
  • the characteristics of this part of the market require LED light-emitting elements to have a small light-emitting angle and a small volume. And lower costs.
  • a small illuminating angle ( ⁇ 1/2 ⁇ 25°, ⁇ 1/2 refers to an angle between a direction in which the illuminating intensity value is half of the axial intensity value and the illuminating axis/normal line) LED is produced and has an off angle.
  • the manufacturing method of the light source component uses a method such as an LED plus a lens, but the method is bulky and cannot be applied in a miniaturized device, and the lens material is large and the cost is high.
  • One existing method is: implanting a high-precision concentrating reflection cavity into an LED package, and additionally configuring a lens structure, although a small angle and a relatively small size can be realized, but the reflective cavity mold is expensive, and the packaging process of the LED light-emitting component is complicated. , resulting in high production costs, and limited by the structure of the reflective cavity, if you want to reduce the illumination angle of the LED light-emitting components, under the premise of the same efficiency and chip size, it is necessary to increase the height of the reflective cavity, resulting in the height of the LED light-emitting component Large, its application is limited. At present, there are infrared radiation LEDs made by European and American manufacturers using this similar structure, which have a size of 3.5x3.5x2.4m m (length x width x height) and an illumination angle of 6 1/2 ⁇ ⁇ 10°.
  • an infrared radiation LED light-emitting element comprising: a bracket structure; a baffle structure, connected to a periphery of the bracket structure; an infrared radiation LED chip, disposed on the bracket Above the structure; an encapsulant covering the periphery of the infrared radiation LED chip; a lens formed on the encapsulant; the lens having a first surface facing the encapsulant and a second surface remote from the encapsulant, the first surface A first sub-surface and a second sub-surface located on opposite sides of the first sub-surface, The longitudinal section of the first sub-surface is curved, and the longitudinal section of the second sub-surface has a trapezoidal shape.
  • the second surface longitudinal section has a stepped shape or a planar shape.
  • the distance between the upper surface or the lower surface of the longitudinal section of the second surface is at most 2.5 to 4 m.
  • the upper surface of the longitudinal section of the second sub-surface of the ladder shape is at a wide distance of 1.5 to 3 m.
  • the narrowest portion of the lower surface of the longitudinal section of the ladder-shaped second sub-surface is at a distance of 0.8 to 2 m.
  • bracket structure and the baffle structure are integrally formed or non-integrally formed.
  • the sum of the height of the bracket structure and the baffle structure is between 1 and 2 mm.
  • the baffle structure is a distributed Bragg reflection layer or a metal reflective layer or an omnidirectional reflection layer or a coated reflective material.
  • the upper surface of the encapsulant is convex or planar.
  • the encapsulant has a refractive index of 1.3 to 1.6.
  • a dam structure is formed around the infrared radiation LED chip.
  • the present invention can obtain a luminous efficiency significantly higher than that of the existing structure under a small volume, and achieve a small illuminating angle ( ⁇ 1/2 ⁇ ⁇ 25°), including the following advantages. :
  • the incident surface of the lens located obliquely above the infrared radiation LED chip causes a large angle of light emitted through the encapsulant to enter the lens and deflect toward a large angle, reducing the longitudinal distance of the light emitting element, and the step of the upper surface of the lens
  • the shape structure can deflect the emitted light to obtain an off-angle light distribution characteristic
  • FIG. 1 is a schematic cross-sectional view of an infrared radiation LED light-emitting element according to Embodiment 1.
  • Embodiment 2 is a schematic plan view of the infrared radiation LED light-emitting element of Embodiment 1.
  • Embodiment 3 is a schematic view showing the optical path of the infrared radiation LED light-emitting element described in Embodiment 1.
  • FIG. 4 is an enlarged schematic view showing a longitudinal section of a second surface of the lens of FIG. 3.
  • FIG. 5 is a schematic diagram of the peak angle of the optical radiation in FIG. 3 and the optical axis direction of the light-emitting device.
  • FIG. 6 is a cross-sectional view showing the infrared radiation LED light-emitting element of Embodiment 2.
  • FIG. 7 is a schematic diagram showing the off-angle of the optical radiation peak direction and the optical axis direction of the light-emitting device of FIG. 6.
  • Embodiment 8 is a cross-sectional view showing the infrared radiation LED light-emitting element of Embodiment 3.
  • FIG. 9 is a cross-sectional view showing the infrared radiation LED light-emitting element of Embodiment 4.
  • FIG. 10 is a cross-sectional view showing the infrared radiation LED light-emitting element of Embodiment 5.
  • the embodiment provides an infrared radiation LED light-emitting component, comprising: a bracket structure 10; a baffle structure 20 connected to the periphery of the bracket structure 11; and an infrared radiation LED chip 30, On the support structure 11; a gold wire for connecting the infrared radiation LED chip 30 and the circuit on the support structure 11 (in the figure) Not shown); the encapsulant 40 covers the periphery of the infrared radiation LED chip; the lens 50 is formed on the encapsulant 40 to form an independent infrared radiation working unit, and the working unit can be realized without additional optical components. Angle, controllable deflection angle of the optical radiation output.
  • the support structure 10 may be made of a single material, such as metal, ceramic, plastic, glass, etc., or may be made of a plurality of composite materials; the support structure of the embodiment preferably comprises a ceramic material, especially having a high The material of thermal conductivity is such that the illuminating element sufficiently cools the radiation-emitting infrared radiation LED chip during operation.
  • the baffle structure 20 may be made of a single material, such as metal, ceramic, plastic, glass, etc., or may be made of a plurality of composite materials; the baffle structure of the embodiment preferably includes a high reflectivity material, such as A reflective material is coated on the distributed Bragg reflector or metal reflective layer or omnidirectional reflective layer or plastic substrate.
  • the material composition of the baffle structure 20 may be the same as or different from that of the support structure 10; the support structure and the baffle structure may be integrally formed, or may be split forming, that is, non-integral molding;
  • the sum H of the height of the support structure and the baffle structure is preferably between 1 and 2 mm.
  • the infrared radiation LED chip 30 is mounted on the support structure 10, and the upper surface of the chip is coated with an encapsulant 40 such as silica gel or epoxy resin, and the sidewall of the baffle structure 20 is higher than the encapsulant 40.
  • an encapsulant 40 such as silica gel or epoxy resin
  • the sidewall of the baffle structure 20 is higher than the encapsulant 40.
  • the upper surface of the encapsulant may be convex, or may be planar or other shapes.
  • the refractive index of the encapsulant is preferably between 1.3 and 1.6, and the refractive index of the encapsulant and the refractive index of the air passing through the encapsulant ( It is generally considered that the difference in refractive index in vacuum is equal to 1.0), which is used to control the direction of the optical path of the infrared radiation LED chip through the encapsulant, and the encapsulant helps to improve the luminous efficiency of the infrared radiation LED chip.
  • the lens 50 has a first surface 51 facing the encapsulant and a second surface 52 away from the encapsulant, and the first surface may include a first sub-surface and a second sub-surface located on both sides of the first sub-surface,
  • the longitudinal cross section of the first sub-surface is curved, and the longitudinal section of the second sub-surface has a trapezoidal shape.
  • the distance D1 of the upper surface of the longitudinal section of the second sub-surface of the trapezoidal shape is between 1.5 and 3 mm.
  • the narrowest distance D2 of the lower surface of the longitudinal section of the ladder-shaped second sub-surface is between 0.8 and 2 mm; the longitudinal section of the second surface 52 may be stepped or planar, and the embodiment preferably has a stepped shape, and the second surface has a longitudinal section.
  • the maximum width D3 of the upper surface is between 2.5 and 4 mm.
  • the bracket structure is used to support and control the optical distance between the lens and the infrared radiation LED chip, and the lens covers the upper mouth region of the baffle structure, and is connected to the bracket structure by bonding.
  • the lens includes an incident surface S l, S2, a reflective surface S3 and an exit surface S4, wherein the incident surfaces SI and S2 are respectively located at a portion directly above and obliquely above the LED infrared radiation chip; the reflective surface S3 is located above the encapsulant;
  • the exit surface S4 is located on the second surface of the lens.
  • the incident surface S 1 is a spherical crown-like convex shape, and the surface thereof is a spherical surface or a quadric surface R value of 0.5 to 3 m m, and the main concentrated infrared radiation LED chip emits light near the optical axis through the encapsulant.
  • the incident surface S2 is formed by bending the edge of the incident surface directly downward, and is mainly used for deflecting the infrared radiation LE D to emit a large angle of light emitted through the encapsulant;
  • the reflecting surface S3 is composed of one or more times
  • the curved surface is formed to form a large and small "bowl-shaped" structure, which mainly reflects the light reflected by the obliquely incident surface of the infrared radiation LED chip along the approximate optical axis direction; the exit surface S4, preferably two or more The stepped shape of the bevel. As shown in Fig.
  • the oblique shape of the stepped shape is AB, AC, and the inclination angles of the oblique sides AB and AC and the optical axis direction are ⁇ , and 6 2 , respectively, where ⁇ , ⁇ ⁇ 2 , and ⁇ ⁇ are optical radiation.
  • the off angle between the peak direction L2 and the optical axis direction L1, ⁇ i is preferably between 0 and 10°; 6 2 is preferably between 95 and 145°, ⁇ ⁇
  • It is preferably between 3 and 35 degrees, more preferably between 5 and 15 degrees.
  • the infrared radiation LED illuminating element provided by the embodiment adopts the same size infrared radiation LED chip (30 milx 30 mil) to achieve a very small light exit angle ( ⁇ 1/2 ⁇ ⁇ 10 °).
  • the volume can be reduced by more than 30%, and the luminous efficiency is increased by more than 15%. It is more suitable for the application of the mobile communication market, and is also conducive to the promotion and application of iris recognition and night vision fill light in the security market.
  • the step shape of the lens 50 away from the second surface 52 of the encapsulant is changed to a planar shape, thereby obtaining a small angle without a deflection angle.
  • the bottom of the bracket structure 11 of the embodiment is provided with a recessed area with a circular step, and the LED infrared radiation chip is assembled in the area, so that the circular step is equivalent.
  • the encapsulant 40 can be coated in the region, and the circular step of the region and the surface tension of the encapsulant can form a convex upper surface of the encapsulant, and of course, the step can also be utilized.
  • the structure first forms a convex shape on the upper surface of the encapsulant, and then planarizes to form a planar structure.
  • the bracket structure 10 of the embodiment is integrally formed with the baffle structure 20. Need to explain Yes, the shape (cross section) of the step is not limited to a circle, and may be an ellipse, a square or other shape.
  • the convex upper surface of the encapsulant 40 is changed to a flat shape.
  • the bracket structure 10 of the present embodiment and the baffle structure 20 are not integrally formed; A concave portion forming a circular step in the bottom of the support structure, but on the upper surface of the support structure 10 and around the LED infrared radiation chip 30, a spherical crown-shaped dam structure 60 is formed, so that a circle similar to that in Embodiment 3 can be achieved.
  • the function of the step helps to form the convex upper surface of the encapsulant.
  • the shape (longitudinal section) of the dam structure is not limited to a spherical crown shape, and may be a semicircular shape, a square shape, a columnar shape or the like.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

An infrared radiation LED light emitting element, comprising: a support structure (10); a baffle structure (20), connected to the periphery of the support structure; an infrared radiation LED chip (30), provided on the support structure; a packaging adhesive (40), covering the periphery of the infrared radiation LED chip; a lens (50), formed on the packaging adhesive and having a first surface (51) facing the packaging adhesive and a second surface (52) away from the packaging adhesive, the first surface comprising a first sub-surface (511) and a second sub-surface (512) located on either side of the first sub-surface (512), wherein the longitudinal section of the first sub-surface is in a curved shape, and the longitudinal section of the second sub-surface is in a trapezoid shape.

Description

一种红外辐射 LED发光元件  Infrared radiation LED light-emitting element
技术领域  Technical field
[0001] 本发明涉及一种红外辐射 LED发光元件， 尤其涉及一种带聚光 /偏光功能透镜的 红外辐射 LED发光元件。  [0001] The present invention relates to an infrared radiation LED light-emitting element, and more particularly to an infrared radiation LED light-emitting element with a concentrating/polarizing function lens.
背景技术  Background technique
[0002] 红外辐射 LED发光元件， 逐渐应用在移动通信市场、 安防市场中的虹膜识别、 夜视补光等， 该部分市场应用的特点要求 LED发光元件要有较小的发光角度、 微 小的体积和较低的成本。  [0002] Infrared radiation LED light-emitting elements are gradually applied in the mobile communication market, iris recognition in the security market, night vision fill light, etc. The characteristics of this part of the market require LED light-emitting elements to have a small light-emitting angle and a small volume. And lower costs.
技术问题  technical problem
[0003] 目前制作小发光角度 （θ 1/2≤±25°， θ 1/2是指发光强度值为轴向强度值一半的方 向与发光轴线 /法线的夹角） LED且有偏角光源组件的制作方案， 多采用 LED外 加透镜等方法， 但是该方法组件体积很大， 无法在小型化设备中应用， 且透镜 用料较多， 成本较高。 现有一种方法是： 将 LED封装体内植入高精度聚光反射腔 ， 另外配置透镜的结构， 虽然也能实现小角度和相对小型化， 但其反射腔模具 昂贵， LED发光元件的封装工艺繁复， 导致制作成本居高不下， 而且受反射腔的 结构限制， 若想缩小 LED发光元件的发光角度， 在相同效率和芯片尺寸前提下， 需要提高反射腔的高度， 从而导致 LED发光元件的高度变大， 其应用受限。 目前 ， 有欧美厂商使用这种类似结构制作的红外辐射 LED, 其尺寸达到 3.5x3.5x2.4m m (长 x宽 x高） ， 发光角度6 1/2≤±10°。 [0003] At present, a small illuminating angle (θ 1/2 ≤±25°, θ 1/2 refers to an angle between a direction in which the illuminating intensity value is half of the axial intensity value and the illuminating axis/normal line) LED is produced and has an off angle. The manufacturing method of the light source component uses a method such as an LED plus a lens, but the method is bulky and cannot be applied in a miniaturized device, and the lens material is large and the cost is high. One existing method is: implanting a high-precision concentrating reflection cavity into an LED package, and additionally configuring a lens structure, although a small angle and a relatively small size can be realized, but the reflective cavity mold is expensive, and the packaging process of the LED light-emitting component is complicated. , resulting in high production costs, and limited by the structure of the reflective cavity, if you want to reduce the illumination angle of the LED light-emitting components, under the premise of the same efficiency and chip size, it is necessary to increase the height of the reflective cavity, resulting in the height of the LED light-emitting component Large, its application is limited. At present, there are infrared radiation LEDs made by European and American manufacturers using this similar structure, which have a size of 3.5x3.5x2.4m m (length x width x height) and an illumination angle of 6 1/2 ≤ ±10°.
问题的解决方案  Problem solution
技术解决方案  Technical solution
[0004] 为了解决上述技术问题， 本发明采用的技术方案包括： 一种红外辐射 LED发光 元件， 包括： 支架结构； 挡板结构， 与支架结构之***相连接； 红外辐射 LED芯 片， 设置于支架结构之上； 封装胶， 覆盖于红外辐射 LED芯片之***； 透镜， 形 成于封装胶之上； 所述透镜具有朝向封装胶的第一表面以及远离封装胶的第二 表面， 所述第一表面包括第一子表面和位于第一子表面两侧的第二子表面， 其 中第一子表面纵截面呈曲面状， 第二子表面纵截面呈梯形状。 [0004] In order to solve the above technical problem, the technical solution adopted by the present invention includes: an infrared radiation LED light-emitting element, comprising: a bracket structure; a baffle structure, connected to a periphery of the bracket structure; an infrared radiation LED chip, disposed on the bracket Above the structure; an encapsulant covering the periphery of the infrared radiation LED chip; a lens formed on the encapsulant; the lens having a first surface facing the encapsulant and a second surface remote from the encapsulant, the first surface A first sub-surface and a second sub-surface located on opposite sides of the first sub-surface, The longitudinal section of the first sub-surface is curved, and the longitudinal section of the second sub-surface has a trapezoidal shape.
[0005] 进- 步地 所述第二表面纵截面呈阶梯形状或平面状。  [0005] Further, the second surface longitudinal section has a stepped shape or a planar shape.
[0006] 进- 步地 位于所述第二表面纵截面的上表面或下表面最宽处相距介于 2.5~4m m。  [0006] Further, the distance between the upper surface or the lower surface of the longitudinal section of the second surface is at most 2.5 to 4 m.
[0007] 进进-一步步地地， 位于所述梯形状第二子表面纵截面的上表面最宽处相距介于 1.5~3m m。  [0007] Progressively, step by step, the upper surface of the longitudinal section of the second sub-surface of the ladder shape is at a wide distance of 1.5 to 3 m.
[0008] 进- 步地 位于所述梯形状第二子表面纵截面的下表面最窄处相距介于 0.8~2m m。  [0008] Further, the narrowest portion of the lower surface of the longitudinal section of the ladder-shaped second sub-surface is at a distance of 0.8 to 2 m.
[0009] 进- 步地 所述支架结构与所述挡板结构为一体成型或非一体成型。  [0009] Further, the bracket structure and the baffle structure are integrally formed or non-integrally formed.
[0010] 进- 步地 所述支架结构与所述挡板结构的高度之和介于 l~2mm。  [0010] Further, the sum of the height of the bracket structure and the baffle structure is between 1 and 2 mm.
[0011] 进- 步地 所述挡板结构为分布布拉格反射层或金属反射层或全方位反射层或 涂布反射材料。  [0011] Further, the baffle structure is a distributed Bragg reflection layer or a metal reflective layer or an omnidirectional reflection layer or a coated reflective material.
[0012] 进一步地， 所述封装胶的上表面呈凸起状或平面状。  [0012] Further, the upper surface of the encapsulant is convex or planar.
[0013] 进一步地， 所述封装胶的折射率介于 1.3~1.6。  [0013] Further, the encapsulant has a refractive index of 1.3 to 1.6.
[0014] 进一步地， 在所述红外辐射 LED芯片周围形成围坝结构。  [0014] Further, a dam structure is formed around the infrared radiation LED chip.
发明的有益效果  Advantageous effects of the invention
有益效果  Beneficial effect
[0015] 与现有技术相比， 本发明可以在微小体积下得到了明显高于现有结构的发光效 率， 并实现较小的发光角 （θ 1/2≤±25°) ， 包括如下优点： [0015] Compared with the prior art, the present invention can obtain a luminous efficiency significantly higher than that of the existing structure under a small volume, and achieve a small illuminating angle (θ 1/2 ≤ ± 25°), including the following advantages. :
[0016] (1) 于红外辐射 LED芯片上形成封装胶， 并于封装胶上方形成透镜， 透镜具 有聚光及偏折出光光轴的作用； [0016] (1) forming an encapsulant on the infrared radiation LED chip, and forming a lens above the encapsulant, the lens having the function of collecting and deflecting the optical axis;
[0017] (2) 透镜位于红外辐射 LED芯片斜上方的入射面使经由封装胶射出的大角度 的光进入透镜内部吋向大角度偏折， 缩小了发光元件的纵向距离， 透镜上表面 的阶梯状结构可以使出射光发生偏折， 获得有偏角的光分布特性； [0017] (2) The incident surface of the lens located obliquely above the infrared radiation LED chip causes a large angle of light emitted through the encapsulant to enter the lens and deflect toward a large angle, reducing the longitudinal distance of the light emitting element, and the step of the upper surface of the lens The shape structure can deflect the emitted light to obtain an off-angle light distribution characteristic;
[0018] (3) 于红外辐射 LED芯片周围形成围坝结构， 再填充封装胶， 藉由围坝结构 和封装胶的张力形成凸起表面， 达到提高红外辐射 LED芯片出光效率的目的。 [0018] (3) forming a dam structure around the infrared radiation LED chip, and then filling the encapsulant, forming a convex surface by the tension of the dam structure and the encapsulant, thereby improving the light-emitting efficiency of the infrared radiation LED chip.
[0019] 本发明的其它特征和优点将在随后的说明书中阐述， 并且， 部分地从说明书中 变得显而易见， 或者通过实施本发明而了解。 本发明的目的和其他优点可通过 在说明书、 权利要求书以及附图中所特别指出的结构来实现和获得。 对附图的简要说明 [0019] Other features and advantages of the invention will be set forth in the description which follows, The objects and other advantages of the present invention are The structures specifically indicated in the description, the claims and the drawings are realized and obtained. Brief description of the drawing
附图说明  DRAWINGS
[0020] 下面参照附图结合实施例对本发明作进一步的说明。  [0020] The present invention will be further described below in conjunction with the embodiments with reference to the accompanying drawings.
[0021] 图 1是实施例 1所述的红外辐射 LED发光元件剖视示意图。 1 is a schematic cross-sectional view of an infrared radiation LED light-emitting element according to Embodiment 1.
[0022] 图 2是实施例 1所述的红外辐射 LED发光元件俯视示意图。 2 is a schematic plan view of the infrared radiation LED light-emitting element of Embodiment 1.
[0023] 图 3是实施例 1所述的红外辐射 LED发光元件光路示意图。 3 is a schematic view showing the optical path of the infrared radiation LED light-emitting element described in Embodiment 1.
[0024] 图 4是图 3中透镜之第二表面纵截面的放大示意图。 4 is an enlarged schematic view showing a longitudinal section of a second surface of the lens of FIG. 3.
[0025] 图 5是图 3中光辐射峰值方向与发光器件光轴方向偏角 Θ 示意图。 5 is a schematic diagram of the peak angle of the optical radiation in FIG. 3 and the optical axis direction of the light-emitting device.
[0026] 图 6是实施例 2所述的红外辐射 LED发光元件剖视示意图。 6 is a cross-sectional view showing the infrared radiation LED light-emitting element of Embodiment 2.
[0027] 图 7是图 6中光辐射峰值方向与发光器件光轴方向偏角 Θ 示意图。 7 is a schematic diagram showing the off-angle of the optical radiation peak direction and the optical axis direction of the light-emitting device of FIG. 6.
[0028] 图 8是实施例 3所述的红外辐射 LED发光元件剖视示意图。 8 is a cross-sectional view showing the infrared radiation LED light-emitting element of Embodiment 3.
[0029] 图 9是实施例 4所述的红外辐射 LED发光元件剖视示意图。 9 is a cross-sectional view showing the infrared radiation LED light-emitting element of Embodiment 4.
[0030] 图 10是实施例 5所述的红外辐射 LED发光元件剖视示意图。 10 is a cross-sectional view showing the infrared radiation LED light-emitting element of Embodiment 5.
[0031] 图中部件符号说明： 10: 支架结构； 20: 挡板结构； 30: 红外辐射 LED芯片； 40： 封装胶； 50: 透镜； 51 : 第一表面； 52: 第二表面； 511 : 第一子表面； 51 2： 第二子表面； 60: 围坝结构； D1 : 梯形状第二子表面纵截面的上表面最宽处 间距； D2: 梯形状第二子表面纵截面的下表面最窄处间距； D3:第二表面纵截面 的上表面最宽处间距； H: 支架结构与挡板结构的高度之和； Sl、 S2: 入射面； S3： 反射面； S4: 出射面： L1 : 光轴方向； L2: 光辐射峰值方向； AB、 AC: 第一表面之阶梯形状斜边。 [0031] Parts symbol description in the figure: 10: bracket structure; 20: baffle structure; 30: infrared radiation LED chip; 40: encapsulation glue; 50: lens; 51: first surface; 52: second surface; First sub-surface; 51 2: second sub-surface; 60: dam structure; D1: maximum width of the upper surface of the longitudinal section of the ladder-shaped second sub-surface; D2: lower surface of the longitudinal section of the second sub-surface of the ladder shape The narrowest spacing; D3: the widest spacing of the upper surface of the longitudinal section of the second surface; H: the sum of the height of the bracket structure and the baffle structure; Sl, S2: the incident surface; S3: the reflecting surface; S4: the outgoing surface: L1 : optical axis direction; L2: optical radiation peak direction; AB, AC: stepped shape hypotenuse of the first surface.
本发明的实施方式 Embodiments of the invention
[0032] 下面结合具体实施例来对本发明进行详细的说明。 [0032] The present invention will be described in detail below in conjunction with specific embodiments.
[0033] 实施例 1 Embodiment 1
[0034] 如图 1和 2所示， 本实施例提供一种红外辐射 LED发光元件， 包括： 支架结构 10 ； 挡板结构 20， 与支架结构 11之***相连接； 红外辐射 LED芯片 30， 设置于支架 结构 11之上； 金线， 用于连接红外辐射 LED芯片 30和支架结构 11上的电路 （图中 未示出） ； 封装胶 40， 覆盖于红外辐射 LED芯片之***； 透镜 50， 形成于封装胶 40之上， 从而形成独立的红外辐射工作单元， 此工作单元无需外加其他光学器 件即可实现小角度、 可控偏转角的光辐射输出。 [0034] As shown in FIGS. 1 and 2, the embodiment provides an infrared radiation LED light-emitting component, comprising: a bracket structure 10; a baffle structure 20 connected to the periphery of the bracket structure 11; and an infrared radiation LED chip 30, On the support structure 11; a gold wire for connecting the infrared radiation LED chip 30 and the circuit on the support structure 11 (in the figure) Not shown); the encapsulant 40 covers the periphery of the infrared radiation LED chip; the lens 50 is formed on the encapsulant 40 to form an independent infrared radiation working unit, and the working unit can be realized without additional optical components. Angle, controllable deflection angle of the optical radiation output.
[0035] 进一步地， 支架结构 10， 可以选用单一材料， 如金属、 陶瓷、 塑料、 玻璃等， 也可以选用多种复合材料制成； 本实施例支架结构优选包含陶瓷材料、 尤其是 具有高的热传导能力的材料， 以便发光元件在工作中充分地冷却发射辐射的红 外辐射 LED芯片。 [0035] Further, the support structure 10 may be made of a single material, such as metal, ceramic, plastic, glass, etc., or may be made of a plurality of composite materials; the support structure of the embodiment preferably comprises a ceramic material, especially having a high The material of thermal conductivity is such that the illuminating element sufficiently cools the radiation-emitting infrared radiation LED chip during operation.
[0036] 进一步地， 挡板结构 20， 可以选用单一材料， 如金属、 陶瓷、 塑料、 玻璃等， 也可以选用多种复合材料制成； 本实施例挡板结构优选包含高反射率材料， 如 分布布拉格反射层或金属反射层或全方位反射层或塑料基体上涂布反射材料。  [0036] Further, the baffle structure 20 may be made of a single material, such as metal, ceramic, plastic, glass, etc., or may be made of a plurality of composite materials; the baffle structure of the embodiment preferably includes a high reflectivity material, such as A reflective material is coated on the distributed Bragg reflector or metal reflective layer or omnidirectional reflective layer or plastic substrate.
[0037] 此外， 挡板结构 20的材料组成可以与支架结构 10—样， 也可以不一样； 支架结 构与挡板结构可以是一体成型， 也可以是分幵成型， 即非一体成型； 所述支架 结构与所述挡板结构的高度之和 H优选介于 l~2mm。  [0037] In addition, the material composition of the baffle structure 20 may be the same as or different from that of the support structure 10; the support structure and the baffle structure may be integrally formed, or may be split forming, that is, non-integral molding; The sum H of the height of the support structure and the baffle structure is preferably between 1 and 2 mm.
[0038] 进一步地， 红外辐射 LED芯片 30装配在支架结构 10之上， 芯片上表面涂覆有比 如硅胶或环氧树脂构成的封装胶 40， 挡板结构 20的侧壁高于封装胶 40的上表面 ， 且上部幵口。 封装胶的上表面可以呈凸起状， 也可以是平面状或者其他形状 ， 封装胶的折射率优选介于 1.3~1.6之间， 藉由封装胶折射率与透过封装胶的空 气折射率 （一般认为真空中的折射率等于 1.0) 之差， 用以控制红外辐射 LED芯 片透过封装胶的光路方向， 且封装胶有助于提高红外辐射 LED芯片的发光效率。  [0038] Further, the infrared radiation LED chip 30 is mounted on the support structure 10, and the upper surface of the chip is coated with an encapsulant 40 such as silica gel or epoxy resin, and the sidewall of the baffle structure 20 is higher than the encapsulant 40. Upper surface, and upper mouth. The upper surface of the encapsulant may be convex, or may be planar or other shapes. The refractive index of the encapsulant is preferably between 1.3 and 1.6, and the refractive index of the encapsulant and the refractive index of the air passing through the encapsulant ( It is generally considered that the difference in refractive index in vacuum is equal to 1.0), which is used to control the direction of the optical path of the infrared radiation LED chip through the encapsulant, and the encapsulant helps to improve the luminous efficiency of the infrared radiation LED chip.
[0039] 进一步地， 透镜 50具有朝向封装胶的第一表面 51以及远离封装胶的第二表面 52 ， 第一表面可以包括第一子表面和位于第一子表面两侧的第二子表面， 其中第 一子表面纵截面呈曲面状， 第二子表面纵截面呈梯形状， 优选位于所述梯形状 第二子表面纵截面的上表面最宽处间距 D1介于 1.5~3mm， 位于所述梯形状第二 子表面纵截面的下表面最窄处间距 D2介于 0.8~2mm; 第二表面 52纵截面可以呈 阶梯形状或平面状， 本实施例优选呈阶梯形状， 第二表面纵截面的上表面最宽 处间距 D3介于 2.5~4mm。  [0039] Further, the lens 50 has a first surface 51 facing the encapsulant and a second surface 52 away from the encapsulant, and the first surface may include a first sub-surface and a second sub-surface located on both sides of the first sub-surface, The longitudinal cross section of the first sub-surface is curved, and the longitudinal section of the second sub-surface has a trapezoidal shape. Preferably, the distance D1 of the upper surface of the longitudinal section of the second sub-surface of the trapezoidal shape is between 1.5 and 3 mm. The narrowest distance D2 of the lower surface of the longitudinal section of the ladder-shaped second sub-surface is between 0.8 and 2 mm; the longitudinal section of the second surface 52 may be stepped or planar, and the embodiment preferably has a stepped shape, and the second surface has a longitudinal section. The maximum width D3 of the upper surface is between 2.5 and 4 mm.
[0040] 如图 3和 4所示， 支架结构用于支撑并控制透镜与红外辐射 LED芯片间的光学距 离， 透镜覆盖在挡板结构上部幵口区域， 并通过粘结方式与支架结构相连接； 透镜包含入射面 S l、 S2， 反射面 S3以及出射面 S4， 其中入射面 S I和 S2， 分别位 于 LED红外辐射芯片的正上方部分和斜上方部分两部分； 反射面 S3位于封装胶 之上； 出射面 S4位于透镜的第二表面上。 [0040] As shown in FIGS. 3 and 4, the bracket structure is used to support and control the optical distance between the lens and the infrared radiation LED chip, and the lens covers the upper mouth region of the baffle structure, and is connected to the bracket structure by bonding. ; The lens includes an incident surface S l, S2, a reflective surface S3 and an exit surface S4, wherein the incident surfaces SI and S2 are respectively located at a portion directly above and obliquely above the LED infrared radiation chip; the reflective surface S3 is located above the encapsulant; The exit surface S4 is located on the second surface of the lens.
[0041] 进一步地， 入射面 S 1呈类球冠型凸起状， 其表面为球面或二次曲面 R值 0.5~3m m， 主要汇聚红外辐射 LED芯片发出经由封装胶射出的位于光轴附近的小角度的 光； 入射面 S2由正上方入射面边缘向下方弯折构成， 主要用于偏转红外辐射 LE D发出经由封装胶射出的大角度的光线； 反射面 S3由一个或多个二次曲面构成， 形成上大下小的"碗形"结构， 其主要将红外辐射 LED芯片斜上方入射面折弯的光 线反射沿近似光轴方向射出； 出射面 S4， 优选 2个或 2个以上的斜面的阶梯形状 。 如图 4所示， 记阶梯形状斜边为 AB、 AC , 则斜边 AB和 AC与光轴方向的倾斜 角分别为 Θ ,和6 2， 其中 θ ,<θ 2， 记 θ Α为光辐射峰值方向 L2与光轴方向 L1之偏角 ， Θ i优选介于为 0~10°； 6 2优选介于 95~145°， Θ Δ [0041] Further, the incident surface S 1 is a spherical crown-like convex shape, and the surface thereof is a spherical surface or a quadric surface R value of 0.5 to 3 m m, and the main concentrated infrared radiation LED chip emits light near the optical axis through the encapsulant. The small angle of light; the incident surface S2 is formed by bending the edge of the incident surface directly downward, and is mainly used for deflecting the infrared radiation LE D to emit a large angle of light emitted through the encapsulant; the reflecting surface S3 is composed of one or more times The curved surface is formed to form a large and small "bowl-shaped" structure, which mainly reflects the light reflected by the obliquely incident surface of the infrared radiation LED chip along the approximate optical axis direction; the exit surface S4, preferably two or more The stepped shape of the bevel. As shown in Fig. 4, the oblique shape of the stepped shape is AB, AC, and the inclination angles of the oblique sides AB and AC and the optical axis direction are Θ, and 6 2 , respectively, where θ , < θ 2 , and θ Α are optical radiation. The off angle between the peak direction L2 and the optical axis direction L1, Θ i is preferably between 0 and 10°; 6 2 is preferably between 95 and 145°, Θ Δ
优选介于 3~35°， 更优选介于 5~15°。  It is preferably between 3 and 35 degrees, more preferably between 5 and 15 degrees.
[0042] 与现有结构相比， 本实施例提供的红外辐射 LED发光元件， 在采用相同尺寸的 红外辐射 LED芯片 （30milx30mil) ， 实现极小出光角度 （Θ 1/2≤±10°) 的前提下 ， 体积可以缩小 30%以上， 发光效率提高 15%以上， 更加适应了移动通信市场的 应用， 也有利于安防市场中的虹膜识别、 夜视补光的推广应用。 [0042] Compared with the prior art, the infrared radiation LED illuminating element provided by the embodiment adopts the same size infrared radiation LED chip (30 milx 30 mil) to achieve a very small light exit angle (Θ 1/2 ≤ ± 10 °). Under the premise, the volume can be reduced by more than 30%, and the luminous efficiency is increased by more than 15%. It is more suitable for the application of the mobile communication market, and is also conducive to the promotion and application of iris recognition and night vision fill light in the security market.
[0043] 实施例 2  Embodiment 2
[0044] 如图 6和 7所示， 与实施例 1不同的是， 本实施例将透镜 50远离封装胶的第二表 面 52的阶梯形状改为平面状， 即可得到无偏转角的小角度红外辐射 LED工作单元  [0044] As shown in FIGS. 6 and 7, unlike the first embodiment, the step shape of the lens 50 away from the second surface 52 of the encapsulant is changed to a planar shape, thereby obtaining a small angle without a deflection angle. Infrared radiation LED working unit
[0045] 实施例 3 Embodiment 3
[0046] 如图 8所示， 与实施例 1不同的是， 本实施例支架结构 11的底部设置一带有圆形 台阶的凹陷区域， 于该区域装配 LED红外辐射芯片， 从而使得圆形台阶相当于围 坝结构， 并可将封装胶 40涂覆在该区域内， 藉由此区域的圆形台阶以及封装胶 的表面张力， 可形成凸起状的封装胶上表面， 当然也可利用此台阶结构将封装 胶上表面先形成凸起状， 再平坦化， 形成平面结构。 此外， 本实施例与实施例 1 的区别， 还在于本实施例的支架结构 10与挡板结构 20为一体成型。 需要说明的 是， 台阶的形状 （横截面） 不限于圆形， 也可以是椭圆形， 方形或者其他形状 [0047] 实施例 4 [0046] As shown in FIG. 8, different from the embodiment 1, the bottom of the bracket structure 11 of the embodiment is provided with a recessed area with a circular step, and the LED infrared radiation chip is assembled in the area, so that the circular step is equivalent. In the dam structure, the encapsulant 40 can be coated in the region, and the circular step of the region and the surface tension of the encapsulant can form a convex upper surface of the encapsulant, and of course, the step can also be utilized. The structure first forms a convex shape on the upper surface of the encapsulant, and then planarizes to form a planar structure. In addition, the difference between the embodiment and the embodiment 1 is that the bracket structure 10 of the embodiment is integrally formed with the baffle structure 20. Need to explain Yes, the shape (cross section) of the step is not limited to a circle, and may be an ellipse, a square or other shape. [0047] Embodiment 4
[0048] 如图 9所示， 与实施例 1不同的是， 本实施例将封装胶 40的凸起状上表面改为平 面状。  As shown in FIG. 9, unlike the first embodiment, in this embodiment, the convex upper surface of the encapsulant 40 is changed to a flat shape.
[0049] 实施例 5 Example 5
[0050] 如图 10所示 （图中透镜未示出） ， 与实施例 3不同的是， 本实施例的支架结构 1 0与挡板结构 20为非一体成型； 此外， 本实施例并非通过于支架结构底部中形成 圆形台阶的凹陷区域， 而是于支架结构 10上表面以及 LED红外辐射芯片 30的周围 ， 制作球冠形围坝结构 60， 如此可以达到类似于实施例 3中的圆形台阶的功能， 有助于形成凸起状的封装胶上表面。 需要说明的是， 围坝结构的形状 （纵截面 ) 不限于球冠形， 也可以是半圆形， 方形， 台柱状或者其他形状。  [0050] As shown in FIG. 10 (the lens is not shown), unlike the third embodiment, the bracket structure 10 of the present embodiment and the baffle structure 20 are not integrally formed; A concave portion forming a circular step in the bottom of the support structure, but on the upper surface of the support structure 10 and around the LED infrared radiation chip 30, a spherical crown-shaped dam structure 60 is formed, so that a circle similar to that in Embodiment 3 can be achieved. The function of the step helps to form the convex upper surface of the encapsulant. It should be noted that the shape (longitudinal section) of the dam structure is not limited to a spherical crown shape, and may be a semicircular shape, a square shape, a columnar shape or the like.
[0051] 尽管已经描述本发明的示例性实施例， 但是应该理解的是， 本发明不局限于这 些示例性实施例， 而是包括本领域的技术人员能够在如上文的权利要求所要求 的本发明的精神和范围内进行各种变化和修改。  Although the exemplary embodiments of the present invention have been described, it should be understood that the present invention is not limited to these exemplary embodiments, but includes those skilled in the art as claimed in the claims Various changes and modifications are made within the spirit and scope of the invention.

Claims

权利要求书 Claim
[权利要求 1] 一种红外辐射 LED发光元件， 包括： 支架结构； 挡板结构， 与支架结 构之***相连接； 红外辐射 LED芯片， 设置于支架结构之上； 封装胶 ， 覆盖于红外辐射 LED芯片之***； 透镜， 形成于封装胶之上； 其特 征在于： 所述透镜具有朝向封装胶的第一表面以及远离封装胶的第二 表面， 所述第一表面包括第一子表面和位于第一子表面两侧的第二子 表面， 其中第一子表面纵截面呈曲面状， 第二子表面纵截面呈梯形状 权利要求 2] 根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 所 述第二表面纵截面呈阶梯形状或平面状。  [Answer 1] An infrared radiation LED light-emitting element, comprising: a bracket structure; a baffle structure connected to a periphery of the bracket structure; an infrared radiation LED chip disposed on the bracket structure; an encapsulant, covering the infrared radiation LED a lens; a lens formed on the encapsulant; wherein the lens has a first surface facing the encapsulant and a second surface away from the encapsulant, the first surface including the first sub-surface and located at a second sub-surface on both sides of a sub-surface, wherein the first sub-surface has a curved cross-section, and the second sub-surface has a trapezoidal shape. 2] An infrared radiation LED illuminating element according to claim 1 The second surface has a stepped shape or a planar shape.
权利要求 3] 根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 位 于所述第二表面纵截面的上表面或下表面最宽处相距介于 2.5~4mm。 权利要求 4] 根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 位 于所述梯形状第二子表面纵截面的上表面最宽处相距介于 1.5~3mm。 权利要求 5] 根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 位 于所述梯形状第二子表面纵截面的下表面最窄处相距介于 0.8~2mm。 权利要求 6] 根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 所 述支架结构与所述挡板结构为一体成型或非一体成型。  The infrared radiation LED illuminating element according to claim 1, wherein the upper surface or the lower surface of the longitudinal section of the second surface is at a wide distance of 2.5 to 4 mm. The infrared radiation LED illuminating element according to claim 1, wherein the upper surface of the longitudinal section of the ladder-shaped second sub-surface is at a wide distance of 1.5 to 3 mm. The infrared radiation LED illuminating element according to claim 1, wherein the lowermost surface of the longitudinal section of the ladder-shaped second sub-surface has a narrowest distance of 0.8 to 2 mm. The invention relates to an infrared radiation LED illuminating element according to claim 1, wherein the bracket structure and the baffle structure are integrally formed or non-integrally formed.
权利要求 7] 根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 所 述支架结构与所述挡板结构的高度之和介于 l~2mm。  The infrared radiation LED illuminating element according to claim 1, wherein the sum of the heights of the bracket structure and the baffle structure is between 1 and 2 mm.
权利要求 8] 根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 所 述挡板结构为分布布拉格反射层或金属反射层或全方位反射层或涂布 反射材料。  The infrared radiation LED illuminating element according to claim 1, wherein the baffle structure is a distributed Bragg reflection layer or a metal reflection layer or an omnidirectional reflection layer or a coated reflection material.
权利要求 9] 根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 所 述封装胶的上表面呈凸起状或平面状。  The infrared radiation LED light-emitting device according to claim 1, wherein the upper surface of the encapsulant is convex or planar.
根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 所 述封装胶的折射率介于 1.3~1.6。  The infrared radiation LED illuminating element according to claim 1, wherein the encapsulant has a refractive index of 1.3 to 1.6.
根据权利要求 1所述的一种红外辐射 LED发光元件， 其特征在于： 在 所述红外辐射 LED芯片周围形成围坝结构。 An infrared radiation LED lighting element according to claim 1, wherein: A dam structure is formed around the infrared radiation LED chip.
PCT/CN2017/108001 2017-08-08 2017-10-27 Infrared radiation led light emitting element WO2019029016A1 (en)

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US10811578B1 (en) * 2019-03-27 2020-10-20 Lextar Electronics Corporation LED carrier and LED package having the same

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CN102644855A (en) * 2011-02-18 2012-08-22 海洋王照明科技股份有限公司 White-light LED (Light-Emitting Diode) light source
CN104132305A (en) * 2014-07-04 2014-11-05 佛山市中山大学研究院 Condensing lens

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CN1734160A (en) * 2004-08-11 2006-02-15 株式会社小糸制作所 Vehicular marker lamp
CN102644855A (en) * 2011-02-18 2012-08-22 海洋王照明科技股份有限公司 White-light LED (Light-Emitting Diode) light source
CN104132305A (en) * 2014-07-04 2014-11-05 佛山市中山大学研究院 Condensing lens

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