WO2019017226A1 - 電子装置の製造方法 - Google Patents
電子装置の製造方法 Download PDFInfo
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- WO2019017226A1 WO2019017226A1 PCT/JP2018/025877 JP2018025877W WO2019017226A1 WO 2019017226 A1 WO2019017226 A1 WO 2019017226A1 JP 2018025877 W JP2018025877 W JP 2018025877W WO 2019017226 A1 WO2019017226 A1 WO 2019017226A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 86
- 239000000853 adhesive Substances 0.000 claims abstract description 102
- 230000001070 adhesive effect Effects 0.000 claims abstract description 102
- 229920006223 adhesive resin Polymers 0.000 claims abstract description 45
- 239000004840 adhesive resin Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000000227 grinding Methods 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims description 77
- 239000011347 resin Substances 0.000 claims description 77
- -1 polybutylene terephthalate Polymers 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 230000002745 absorbent Effects 0.000 claims description 23
- 239000002250 absorbent Substances 0.000 claims description 23
- 239000005001 laminate film Substances 0.000 claims description 21
- 229920001971 elastomer Polymers 0.000 claims description 19
- 239000000806 elastomer Substances 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 19
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 16
- 238000004132 cross linking Methods 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 10
- 229920000728 polyester Polymers 0.000 claims description 8
- 229920002647 polyamide Polymers 0.000 claims description 7
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 7
- 239000004952 Polyamide Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 5
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000003855 Adhesive Lamination Methods 0.000 claims description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000003522 acrylic cement Substances 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 143
- 239000005977 Ethylene Substances 0.000 description 79
- 239000010408 film Substances 0.000 description 79
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 77
- 229920001577 copolymer Polymers 0.000 description 64
- 239000004711 α-olefin Substances 0.000 description 39
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 22
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 12
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 11
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229920000058 polyacrylate Polymers 0.000 description 7
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000007870 radical polymerization initiator Substances 0.000 description 6
- 229920002725 thermoplastic elastomer Polymers 0.000 description 6
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229920002554 vinyl polymer Polymers 0.000 description 5
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 4
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 4
- 229920010126 Linear Low Density Polyethylene (LLDPE) Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 4
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229920005672 polyolefin resin Polymers 0.000 description 4
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 3
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 3
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229920006164 aromatic vinyl copolymer Polymers 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N desyl alcohol Natural products C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229920001038 ethylene copolymer Polymers 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 3
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 3
- 150000001451 organic peroxides Chemical class 0.000 description 3
- 239000003505 polymerization initiator Substances 0.000 description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000012719 thermal polymerization Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229920003067 (meth)acrylic acid ester copolymer Polymers 0.000 description 2
- AFFLGGQVNFXPEV-UHFFFAOYSA-N 1-decene Chemical compound CCCCCCCCC=C AFFLGGQVNFXPEV-UHFFFAOYSA-N 0.000 description 2
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 2
- 239000004716 Ethylene/acrylic acid copolymer Substances 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- FFBZKUHRIXKOSY-UHFFFAOYSA-N aziridine-1-carboxamide Chemical compound NC(=O)N1CC1 FFBZKUHRIXKOSY-UHFFFAOYSA-N 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- FOVOZDZMJORVKP-UHFFFAOYSA-N ethene;prop-2-enenitrile Chemical group C=C.C=C.C=CC#N FOVOZDZMJORVKP-UHFFFAOYSA-N 0.000 description 2
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 229920000554 ionomer Polymers 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002589 poly(vinylethylene) polymer Polymers 0.000 description 2
- 150000004291 polyenes Chemical class 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 229920005604 random copolymer Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000004073 vulcanization Methods 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- UYEDESPZQLZMCL-UHFFFAOYSA-N 1,2-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(C)C(C)=CC=C3SC2=C1 UYEDESPZQLZMCL-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- IVSZLXZYQVIEFR-UHFFFAOYSA-N 1,3-Dimethylbenzene Natural products CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 1
- OVBFMUAFNIIQAL-UHFFFAOYSA-N 1,4-diisocyanatobutane Chemical compound O=C=NCCCCN=C=O OVBFMUAFNIIQAL-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- YNSNJGRCQCDRDM-UHFFFAOYSA-N 1-chlorothioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl YNSNJGRCQCDRDM-UHFFFAOYSA-N 0.000 description 1
- CTOHEPRICOKHIV-UHFFFAOYSA-N 1-dodecylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCCCCCCCCCCC CTOHEPRICOKHIV-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- PKXHXOTZMFCXSH-UHFFFAOYSA-N 3,3-dimethylbut-1-ene Chemical compound CC(C)(C)C=C PKXHXOTZMFCXSH-UHFFFAOYSA-N 0.000 description 1
- YHQXBTXEYZIYOV-UHFFFAOYSA-N 3-methylbut-1-ene Chemical compound CC(C)C=C YHQXBTXEYZIYOV-UHFFFAOYSA-N 0.000 description 1
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004709 Chlorinated polyethylene Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- HSRJKNPTNIJEKV-UHFFFAOYSA-N Guaifenesin Chemical compound COC1=CC=CC=C1OCC(O)CO HSRJKNPTNIJEKV-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 150000001541 aziridines Chemical class 0.000 description 1
- 239000007869 azo polymerization initiator Substances 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 1
- 229940069096 dodecene Drugs 0.000 description 1
- QHZOMAXECYYXGP-UHFFFAOYSA-N ethene;prop-2-enoic acid Chemical compound C=C.OC(=O)C=C QHZOMAXECYYXGP-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 150000002432 hydroperoxides Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 125000005634 peroxydicarbonate group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000747 poly(lactic acid) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000223 polyglycerol Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 239000004626 polylactic acid Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
Definitions
- the present invention relates to a method of manufacturing an electronic device.
- the following problems have been found in the method of manufacturing an electronic device having electromagnetic wave shielding properties.
- the circuit forming surface 100A of the electronic component 100 is protected by the circuit forming surface protecting tape 130. It has been found that when forming the electromagnetic wave shielding layer 140, the electromagnetic wave shielding layer 140 may not be formed at the lower end portion 150 of the side surface of the electronic component 100. In this case, the electromagnetic wave shielding property of the electronic component 100 is inferior.
- the present inventors further studied based on the above findings, and as shown in FIG. 3, when the electronic component 100 attached to the dicing tape 120 is rearranged on the circuit forming surface protection tape 130, the circuit formation is performed. It has been found that the portion (adhesive layer) in contact with the lower end portion 150 of the side surface of the surface protection tape 130 in the side surface of the electronic component 100 may swell to cover the lower end portion 150 of the side surface of the electronic component 100. That is, according to the study of the present inventors, the lower end portion 150 of the side surface of the electronic component 100 is covered with the adhesive 160 constituting the adhesive layer of the tape 130 for protecting the circuit forming surface. It has become clear that the electromagnetic shielding layer 140 is not formed on the lower end portion 150 of the side surface.
- the electronic component 100 is attached to the back grind tape 110 to perform the back grinding process, and then the electronic component 100 is peeled off from the back grind tape 110 Thereafter, the electronic component 100 is peeled off from the dicing tape 120 and then rearranged into a tape 130 for protecting a circuit formation surface to perform an electromagnetic wave shield layer forming step. Therefore, in the conventional method of manufacturing an electronic device, three kinds of tapes for temporarily fixing the electronic component 100 are used, and the step of attaching the electronic component 100 to each tape, the step of peeling the electronic component 100 from each tape, etc. And the number of processes was very large.
- the present inventors have improved the method of manufacturing an electronic device having electromagnetic wave shielding properties from the viewpoint of shortening the manufacturing process of the electronic device while forming the electromagnetic wave shielding layer well for the electronic component. I found that there was room.
- the present invention has been made in view of the above circumstances, and provides a method of manufacturing an electronic device capable of favorably forming an electromagnetic wave shield layer on an electronic component and shortening the manufacturing process of the electronic device. It is.
- the present inventors diligently studied to achieve the above object.
- the same adhesive laminated film is used as a film for protecting the circuit forming surface of the electronic component to stick the electronic component to each tape.
- the present invention has been completed by finding that part of the step of peeling an electronic component from each tape and the like can be omitted, and formation defects of the electromagnetic wave shielding layer at the lower end of the side surface of the electronic component can be suppressed.
- An adhesive having an electronic component having a circuit forming surface, a base material layer and an adhesive resin layer, and the adhesive resin layer side being attached to the circuit forming surface of the electronic component so as to protect the circuit forming surface.
- Preparing a structure comprising: a flexible laminated film; Backgrinding the surface of the electronic component opposite to the circuit formation surface in a state of being attached to the adhesive laminated film; A step (C) of dicing the electronic component in a state of being attached to the adhesive laminated film; A step (D) of forming an electromagnetic wave shielding layer on the singulated electronic component in the state of being attached to the adhesive laminated film;
- the manufacturing method of the electronic device which uses the same adhesive laminated film as said adhesive laminated film in said process (A), said process (B), said process (C), and said process (D).
- the adhesive resin layer contains a radiation crosslinkable pressure-sensitive adhesive
- the manufacturing method of the electronic device which further includes the process (G) which irradiates radiation with respect to the said adhesive resin layer, and bridge
- the electromagnetic wave shielding layer is formed on the electronic component using at least one method selected from a sputtering method, an evaporation method, a spray coating method, an electrolytic plating method and an electroless plating method.
- Device manufacturing method In the method of manufacturing an electronic device according to the above [9], A method of manufacturing an electronic device, wherein H / d is 0.01 or more and 1 or less, where the height of the bump electrode is H [ ⁇ m] and the thickness of the uneven absorbent resin layer is d [ ⁇ m].
- the electromagnetic wave shielding layer is formed on the electronic component using at least one method selected from a sputtering method, an evaporation method, a spray coating method, an electrolytic plating method and an electroless plating method.
- step (D) a method of manufacturing an electronic device, wherein the electromagnetic wave shielding layer is formed at least on an opposing surface facing the circuit forming surface of the electronic component and a side surface connecting the circuit forming surface and the opposing surface.
- the resin constituting the substrate layer comprises one or more selected from the group consisting of polyester elastomers, polyamide elastomers, polyimide elastomers, polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, and polyimide Manufacturing method.
- the adhesive comprising the adhesive resin layer is an electron comprising one or more selected from a (meth) acrylic adhesive, a silicone adhesive, a urethane adhesive, an olefin adhesive and a styrene adhesive Device manufacturing method.
- the electromagnetic wave shielding layer can be favorably formed on the electronic component, and the manufacturing process of the electronic device can be shortened.
- FIG. 1 is a flow chart showing an example of a method of manufacturing an electronic device according to the present invention.
- FIG. 2 is sectional drawing which showed typically an example of the manufacturing method of the electronic device of embodiment which concerns on this invention.
- the method for manufacturing an electronic device includes the following steps (A), (B), (C) and (D) in this order at least: (A), (B), The same adhesive laminate film is used as the adhesive laminate film 50 in the steps (C) and (D).
- Step of preparing the structure 60 including the adhesive laminated film 50 to which the 40 side is attached (B) The opposite side to the circuit forming surface 10A of the electronic component 10 in the state of being attached to the adhesive laminated film 50 (C) dicing the electronic component 10 in a state of being attached to the adhesive laminated film 50 (D) singulating in a state of being attached to the adhesive laminated film 50 Of forming an electromagnetic wave shielding layer 70 on the printed electronic component 10
- the circuit forming surface 100A of the electronic component 100 is protected by the circuit forming surface protection tape 130.
- the electromagnetic wave shield layer 140 may not be formed on the lower end portion 150 of the side surface of the electronic component 100. In this case, the electromagnetic wave shielding property of the electronic component 100 is inferior.
- the present inventors further studied based on the above findings, and as shown in FIG. 3, when the electronic component 100 attached to the dicing tape 120 is rearranged on the circuit forming surface protection tape 130, the circuit formation is performed. It has been found that the portion (adhesive layer) in contact with the lower end portion 150 of the side surface of the surface protection tape 130 in the side surface of the electronic component 100 may swell to cover the lower end portion 150 of the side surface of the electronic component 100. That is, according to the study of the present inventors, the lower end portion 150 of the side surface of the electronic component 100 is covered with the adhesive 160 constituting the adhesive layer of the tape 130 for protecting the circuit forming surface. It has become clear that the electromagnetic shielding layer 140 is not formed on the lower end portion 150 of the side surface.
- the electronic component 100 is attached to the back grind tape 110 to perform the back grinding process, and then the electronic component 100 is peeled off from the back grind tape 110 Thereafter, the electronic component 100 is peeled off from the dicing tape 120 and then rearranged into a tape 130 for protecting a circuit formation surface to perform an electromagnetic wave shield layer forming step. Therefore, in the conventional method of manufacturing an electronic device, three kinds of tapes for temporarily fixing the electronic component 100 are used, and the step of attaching the electronic component 100 to each tape, the step of peeling the electronic component 100 from each tape, etc. And the number of processes was very large.
- the present inventors have improved the method of manufacturing an electronic device having electromagnetic wave shielding properties from the viewpoint of shortening the manufacturing process of the electronic device while forming the electromagnetic wave shielding layer well for the electronic component. I found that there was room.
- the present inventors diligently studied to achieve the above object.
- the electronic component 10 can be made into each tape by using the same adhesive laminated film 50 as a film for protecting the circuit forming surface 10A of the electronic component 10. It has been found that a part of the step of attaching and the step of peeling the electronic component 10 from each tape can be omitted, and the formation defect of the electromagnetic wave shielding layer at the lower end of the side surface of the electronic component 10 can be suppressed.
- the film is attached to the dicing tape 120 as shown in FIG. It is possible to omit the process of rearranging the obtained electronic component 100 on the circuit forming surface protection tape 130. Therefore, the phenomenon that the lower end portion of the side surface of the electronic component 10 is covered with the adhesive forming the adhesive resin layer 40 does not occur. Therefore, in the method of manufacturing the electronic device according to the present embodiment, the electromagnetic wave shield layer 70 can be favorably formed up to the lower end portion of the side surface of the electronic component 10.
- the same adhesive laminated film 50 is used as a film for protecting the circuit forming surface 10A of the electronic component 10 in the back grinding step, the dicing step and the electromagnetic wave shield layer forming step.
- the electromagnetic wave shielding layer can be favorably formed on the electronic component, and the manufacturing process of the electronic device can be shortened.
- Adhesive Laminated Film the adhesive laminated film 50 used in the method of manufacturing an electronic device according to the present embodiment will be described.
- the base material layer 20 is a layer provided for the purpose of improving the properties such as the handleability, the mechanical properties, and the heat resistance of the adhesive laminated film 50.
- the base material layer 20 is not specifically limited, For example, a resin film is mentioned.
- resin which comprises the base material layer 20 a well-known thermoplastic resin can be used.
- polyolefins such as polyethylene, polypropylene, poly (4-methyl-1-pentene) and poly (1-butene); polyesters such as polyethylene terephthalate, polybutylene terephthalate and polyethylene naphthalate; nylon-6, nylon-66, poly Polyamides such as metaxylene adipamide; polyacrylates; polymethacrylates; polyvinyl chlorides; polyimides; polyetherimides; polyamideimides; ethylene imides; vinyl acetate copolymers; polyacrylonitriles; polycarbonates; polystyrenes; ionomers; Polysulfone; Polyether ether ketone; Polyphenylene sulfide; Polyphenylene ether; Polyester-based elastomer, Polyamide-based elastomer, Polyimide-based Mention may be made of one or more selected from the like; Sutoma, elastomers such as polybutylene terephthalate.
- polypropylene polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene / vinyl acetate copolymer, polyester elastomer, polyamide elastomer, polyimide elastomer, and polybutylene terephthalate
- polyethylene terephthalate, polyethylene naphthalate, polyester elastomer, polyamide elastomer, polyimide elastomer, polybutylene terephthalate and polyimide are more preferable.
- flexibility of the adhesive laminated film 50, and elasticity, and elasticity, and a base layer 20 a polyester-type elastomer, a polyamide-type elastomer, a polyimide-type elastomer And one or more selected from polybutylene terephthalate and the like are more preferable.
- a polyester-type elastomer, a polyamide-type elastomer, a polyimide-type elastomer And one or more selected from polybutylene terephthalate and the like are more preferable.
- the melting point of the base material layer 20 is preferably 100 ° C. or more, and more preferably 120 ° C. or more.
- the upper limit of the melting point is not particularly limited and may be selected in view of processability and the like, but may be 300 ° C. or less from the viewpoint of improving the extensibility of the adhesive laminated film 50 in the step (F). Also, it may be 250 ° C. or less.
- deformation or melting of the adhesive laminate film 50 can be further suppressed even if the adhesive laminate film 50 is exposed to a high temperature in the step (D).
- the base layer 20 may be a single layer or two or more layers. Moreover, as a form of the resin film used in order to form the base material layer 20, a stretched film may be sufficient and the film uniaxially or biaxially stretched may be sufficient.
- the thickness of the base material layer 20 is preferably 10 ⁇ m to 500 ⁇ m, more preferably 20 ⁇ m to 300 ⁇ m, and still more preferably 25 ⁇ m to 250 ⁇ m from the viewpoint of obtaining good film properties.
- the substrate layer 20 may be subjected to surface treatment to improve adhesion with other layers. Specifically, corona treatment, plasma treatment, undercoat treatment, primer coating treatment, etc. may be performed.
- the adhesive laminated film 50 preferably further includes a concavo-convex absorbent resin layer 30 between the base material layer 20 and the adhesive resin layer 40.
- the concavo-convex absorbent resin layer 30 is provided for the purpose of improving the followability of the adhesive laminated film 50 to the circuit forming surface 10A and improving the adhesion between the circuit forming surface 10A and the adhesive laminated film 50. It is a layer.
- the conductivity for forming the electromagnetic wave shield layer it has been found that the sex component enters the circuit formation surface of the electronic component and adheres to the circuit, and as a result, the circuit may be electrically short circuited. Moreover, the circuit which comprises a circuit formation surface was easy to electrically short, so that the unevenness
- the present inventors diligently studied to achieve the above object.
- the adhesion between the electronic component and the protective film is insufficient, the conductive component for forming the electromagnetic wave shielding layer is likely to enter the circuit forming surface of the electronic component, which is likely to cause the conduction failure of the circuit.
- the ability of the protective film to follow the irregularities on the circuit formation surface of the electronic component tends to be insufficient.
- Adhesion with the protective film tends to be insufficient.
- the conductive component for forming the electromagnetic wave shielding layer easily infiltrates the circuit forming surface of the electronic component, and the conduction failure of the circuit forming the circuit forming surface is likely to occur.
- the present inventors have further studied based on the above findings. As a result, by using the adhesive laminate film 50 having the substrate layer 20, the concavo-convex absorbent resin layer 30, and the adhesive resin layer 40 in this order as a film for protecting the circuit forming surface 10A of the electronic component 10, It has been found that an electrical short circuit of the circuit forming surface 10A can be suppressed, and an electronic device having an electromagnetic wave shielding property can be stably obtained.
- the adhesive laminate film 50 further having the concavo-convex absorbent resin layer 30, the adhesive laminate film 50 can easily follow the circuit forming surface 10A of the electronic component 10, and the adhesive laminate film 50 and the electronic component 10 can be made Adhesiveness with the circuit formation surface 10A can be improved. As a result, the unevenness of the circuit forming surface 10A of the electronic component 10 can be easily followed, and the gap between the adhesive laminate film 50 and the circuit forming surface 10A of the electronic component 10 can be further reduced.
- the conductive component for forming the electromagnetic wave shield layer 70 can be prevented from entering the circuit formation surface 10A of the electronic component 10, and the circuit formation surface It is possible to suppress an electrical short circuit of the circuit that constitutes 10A.
- the resin constituting the concavo-convex absorbent resin layer 30 is not particularly limited as long as it exhibits concavo-convex absorptivity, and is selected from the group consisting of, for example, polyolefin resins, polystyrene resins, and (meth) acrylic resins 1 type or 2 types or more are mentioned.
- corrugated absorptive resin layer 30 contains crosslinkable resin. Since the concavo-convex absorbent resin layer 30 contains the crosslinkable resin, it becomes possible to crosslink the concavo-convex absorbent resin layer 30 before the step (D) to improve the heat resistance, and as a result, in the step (D) Even if the pressure-sensitive adhesive laminate film 50 is exposed to a high temperature, the deformation and melting of the pressure-sensitive adhesive laminate film 50 can be further suppressed.
- the crosslinkable resin according to the present embodiment is not particularly limited as long as it is a resin that can form the concavo-convex absorbent resin layer 30 and can be crosslinked by external stimuli such as heat and light to improve heat resistance.
- ethylene / ⁇ -olefin copolymer containing ⁇ -olefin having 3 to 20 carbon atoms high density ethylene resin, low density ethylene resin, medium density ethylene resin, ultra low density ethylene resin, linear Low density polyethylene (LLDPE) resin, propylene (co) polymer, 1-butene (co) polymer, 4-methylpentene-1 (co) polymer, ethylene / cycloolefin copolymer, ethylene / ⁇ -olefin ⁇ Cyclic olefin copolymer, ethylene ⁇ ⁇ -olefin ⁇ nonconjugated polyene copolymer, ethylene ⁇ ⁇ -olefin ⁇ conjugated polyene copolymer, ethylene ⁇ aromatic vinyl Olefin resin such as ethylene copolymer, ethylene, ⁇ -olefin, aromatic vinyl copolymer; ethylene, unsaturated carboxylic anhydride copolymer, ethylene, ⁇ -ole
- Ethylene / carboxylic anhydride based copolymer ethylene / epoxy containing unsaturated compound copolymer, ethylene / ⁇ -olefin / epoxy containing unsaturated compound copolymer etc.
- ethylene / epoxy based copolymer ethylene / (meth) Ethyl acrylate copolymer, ethylene (methyl) (meth) acrylate copolymer, ethylene (propyl) (meth) acrylate copolymer, ethylene (butyl) (meth) acrylate copolymer, ethylene (meth) acrylic acid Hexyl copolymer, ethylene / (meth) acrylic acid-2-hydroxyethyl copolymer, ethylene / (meth) acrylic acid-2- Ethylene (meth) acrylic acid ester copolymer such as doxypropyl copolymer, ethylene (glyc) acrylic acid copolymer, ethylene (meth) acrylic acid copolymer
- ethylene / ⁇ -olefin copolymers consisting of ethylene and ⁇ -olefins of 3 to 20 carbon atoms, low density ethylene resins, and the like, because they are easily crosslinked by a crosslinking agent such as an organic peroxide.
- Density ethylene resin Density ethylene resin, ultra low density ethylene resin, linear low density polyethylene (LLDPE) resin, ethylene / cyclic olefin copolymer, ethylene / ⁇ -olefin / cyclic olefin copolymer, ethylene / ⁇ -olefin / ethylene olefin resin Olefin resins such as non-conjugated polyene copolymer, ethylene / ⁇ -olefin / conjugated polyene copolymer, ethylene / aromatic vinyl copolymer, ethylene / ⁇ -olefin / aromatic vinyl copolymer, ethylene / unsaturated Carboxylic anhydride copolymer, ethylene / ⁇ -olefin / unsaturated carboxylic anhydride copolymer, ethylene / epoxy containing Saturated compound copolymer, ethylene / ⁇ -olefin / epoxy-containing unsaturated compound
- Ethylene / ⁇ -olefin copolymer consisting of ethylene and ⁇ -olefin having 3 to 20 carbon atoms, low density ethylene resin, ultra low density ethylene resin, linear low density polyethylene (LLDPE) resin, ethylene ⁇ ⁇ -Olefin ⁇ nonconjugated polyene copolymer, ethylene ⁇ ⁇ -olefin ⁇ conjugated polyene copolymer, ethylene ⁇ unsaturated carboxylic anhydride copolymer, ethylene ⁇ ⁇ -olefin ⁇ unsaturated carboxylic anhydride copolymer, ethylene ⁇ Epoxy-containing unsaturated compound copolymer, ethylene / ⁇ -olefin / epoxy-containing unsaturated compound copolymer, ethylene / vinyl acetate copolymer, ethylene
- Ethylene / ⁇ -olefin copolymer consisting of ethylene and ⁇ -olefin having 3 to 20 carbon atoms, low density ethylene resin, ultra low density ethylene resin, linear low density polyethylene (LLDPE) resin, ethylene ⁇ ⁇ -Olefin ⁇ non-conjugated polyene copolymer, ethylene ⁇ ⁇ -olefin ⁇ conjugated polyene copolymer, ethylene ⁇ vinyl acetate copolymer, ethylene ⁇ acrylic acid copolymer, ethylene ⁇ methacrylic acid copolymer etc.
- LLDPE linear low density polyethylene
- one or more selected from unsaturated carboxylic acid copolymers are particularly preferably used.
- at least one selected from ethylene / ⁇ -olefin copolymer and ethylene / vinyl acetate copolymer is particularly preferably used.
- the above-described resins may be used alone or in combination.
- the ⁇ -olefin of the ethylene / ⁇ -olefin copolymer consisting of ethylene and an ⁇ -olefin having 3 to 20 carbon atoms, which is used as a crosslinkable resin in this embodiment, is usually an ⁇ -olefin having 3 to 20 carbon atoms Can be used alone or in combination of two or more. Among them, ⁇ -olefins having 10 or less carbon atoms are preferable, and ⁇ -olefins having 3 to 8 carbon atoms are particularly preferable.
- an ⁇ -olefin for example, propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3,3-dimethyl-1-butene, 4-methyl-1-pentene And 1-octene, 1-decene, 1-dodecene and the like.
- propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene and 1-octene are preferable from the viewpoint of availability.
- the ethylene / ⁇ -olefin copolymer may be a random copolymer or a block copolymer, but a random copolymer is preferable from the viewpoint of flexibility.
- the thickness of the concavo-convex absorbing resin layer 30 is not particularly limited as long as it can embed the concavities and convexities on the circuit forming surface 10A of the electronic component 10, but for example, it is preferably 10 ⁇ m to 1000 ⁇ m, and 20 ⁇ m.
- the thickness is more preferably 900 ⁇ m or less, still more preferably 30 ⁇ m to 800 ⁇ m, and particularly preferably 50 ⁇ m to 700 ⁇ m.
- the circuit formation surface of the electronic component includes a bump electrode
- the circuit constituting the circuit formation surface tends to be electrically short circuited.
- the adhesive laminate film 50 further having the concavo-convex absorbent resin layer 30 it is possible to suppress an electrical short circuit to the electronic component 10 including the bump electrode on the circuit formation surface 10A.
- H / d is 1 or less Is preferably 0.85 or less, and more preferably 0.7 or less.
- corrugation absorptivity can be made more favorable, making thickness of the adhesive laminated
- the lower limit of H / d is not particularly limited, but is, for example, 0.01 or more, preferably 0.1 or more, and more preferably 0.3 or more.
- the height of the bump electrode is generally 2 ⁇ m or more and 600 ⁇ m or less.
- the height of the bump electrode is preferably 10 ⁇ m or more, more preferably 30 ⁇ m or more, still more preferably 50 ⁇ m or more, still more preferably 80 ⁇ m or more, particularly preferably 100 ⁇ m or more, the method of manufacturing the electronic device according to this embodiment. Can be obtained more effectively.
- the adhesive resin layer 40 is a layer provided on one surface side of the base material layer 20 or the concavo-convex absorbent resin layer 30, and when the adhesive laminated film 50 is attached to the circuit forming surface 10A of the electronic component 10. It is a layer which contacts and adheres to the circuit formation surface 10A of the electronic component 10.
- Examples of the pressure-sensitive adhesive that constitutes the adhesive resin layer 40 include (meth) acrylic pressure-sensitive adhesives, silicone-based pressure-sensitive adhesives, urethane-based pressure-sensitive adhesives, olefin-based pressure-sensitive adhesives, and styrene-based pressure-sensitive adhesives.
- a (meth) acrylic pressure-sensitive adhesive having a (meth) acrylic polymer as a base polymer is preferable in terms of facilitating adjustment of adhesive strength and the like.
- the pressure-sensitive adhesive constituting the adhesive resin layer 40 a radiation crosslinkable pressure-sensitive adhesive which reduces the adhesion by radiation can also be used.
- the adhesive resin layer 40 made of a radiation crosslinkable pressure-sensitive adhesive is crosslinked by irradiation with radiation and the adhesion is significantly reduced. Therefore, the step of peeling off the electronic component 10 and the adhesive laminate film 50 described later (F) In this case, the electronic component 10 can be easily peeled off from the adhesive resin layer 40.
- radiation include ultraviolet rays, electron beams, infrared rays and the like.
- an ultraviolet crosslinking adhesive is preferable.
- Examples of (meth) acrylic polymers contained in (meth) acrylic pressure-sensitive adhesives include homopolymers of (meth) acrylic acid ester compounds, copolymers of (meth) acrylic acid ester compounds and comonomers, etc. It can be mentioned.
- Examples of (meth) acrylic acid ester compounds include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, hydroxyethyl (meth) acrylate and hydroxypropyl (meth) Acrylate, dimethylaminoethyl (meth) acrylate, glycidyl (meth) acrylate and the like.
- (meth) acrylic acid ester compounds may be used alone or in a combination of two or more.
- a comonomer which comprises a (meth) acrylic-type copolymer, vinyl acetate, (meth) acrylonitrile, styrene, (meth) acrylic acid, itaconic acid, (meth) acrylamide, methylol (meth) acrylic, for example Amide, maleic anhydride and the like can be mentioned.
- These comonomers may be used alone or in a combination of two or more.
- the radiation crosslinkable pressure-sensitive adhesive contains, for example, the (meth) acrylic polymer, a crosslinkable compound (component having a carbon-carbon double bond), and a photopolymerization initiator or a thermal polymerization initiator.
- crosslinkable compound examples include monomers, oligomers or polymers which have a carbon-carbon double bond in the molecule and can be crosslinked by radical polymerization.
- a crosslinkable compound for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, tetraethylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, neoi Esters of (meth) acrylic acid and polyhydric alcohol such as pentyl glycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate; ester (meth) acrylate oligomers; 2-propenyl di-3-butenyl cyanurate, 2 And isocyanurate such as hydroxyethyl bis (2- (meth) acryloxyethyl) isocyanurate and tris (2-methacryl
- the content of the crosslinkable compound is preferably 5 to 900 parts by mass, more preferably 5 to 100 parts by mass, and still more preferably 10 to 50 parts by mass with respect to 100 parts by mass of the (meth) acrylic polymer.
- the content of the crosslinkable compound is in the above range, the adhesion can be easily adjusted as compared to the case where the content is less than the above range, and the sensitivity to heat or light is too high as compared to the case where the content is more than the above range. It is unlikely that the storage stability declines.
- the photopolymerization initiator may be a compound which is cleaved to generate a radical upon irradiation with radiation, for example, benzoin alkyl ethers such as benzoin methyl ether, benzoin isopropyl ether and benzoin isobutyl ether; benzyl, benzoin, benzophenone Aromatic ketones such as ⁇ -hydroxycyclohexyl phenyl ketone; aromatic ketals such as benzyl dimethyl ketal; polyvinyl benzophenone; thioxanthones such as chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone and the like.
- benzoin alkyl ethers such as benzoin methyl ether, benzoin isopropyl ether and benzoin isobutyl ether
- benzyl, benzoin benzophenone
- thermal polymerization initiator an organic peroxide derivative, an azo polymerization initiator, etc. are mentioned, for example. From the viewpoint that nitrogen is not generated during heating, an organic peroxide derivative is preferred.
- the thermal polymerization initiator include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxy esters and peroxy dicarbonates.
- a crosslinker may be added to the adhesive.
- the crosslinking agent include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether and diglycerol polyglycidyl ether; and tetramethylolmethane-tri- ⁇ -aziridinyl propionate.
- the content of the crosslinking agent is 0.1 parts by mass or more and 10 parts by mass or less with respect to 100 parts by mass of the (meth) acrylic polymer from the viewpoint of improving the balance between the heat resistance and adhesion of the adhesive resin layer 40. Is preferred.
- the thickness of the adhesive resin layer 40 is not particularly limited, but is preferably, for example, 1 ⁇ m to 100 ⁇ m, and more preferably 3 ⁇ m to 50 ⁇ m.
- the adhesive resin layer 40 can be formed, for example, by applying an adhesive coating liquid on the base layer 20 or the uneven absorbent resin layer 30.
- a method of applying the pressure-sensitive adhesive coating liquid a roll coating method, a reverse roll coater method, a gravure roll method, a bar coating method, a comma coater method, a die coater method or the like can be adopted.
- There are no particular limitations on the drying conditions of the applied pressure-sensitive adhesive but in general, drying in a temperature range of 80 to 200 ° C. for 10 seconds to 10 minutes is preferable. More preferably, it is dried at 80 to 170 ° C. for 15 seconds to 5 minutes.
- it may be heated at 40 to 80 ° C. for about 5 to 300 hours after the drying of the pressure-sensitive adhesive coating liquid is completed.
- the total light transmittance of the adhesive laminated film 50 according to the present embodiment is preferably 85% or more, and more preferably 90% or more. In this way, the adhesive laminate film 50 can be provided with transparency. And when irradiating radiation from the base material layer 20 side in the adhesive laminated film 50 which concerns on this embodiment by making the total light transmittance of the adhesive laminated film 50 more than the said lower limit, an adhesive resin layer The radiation can be more effectively irradiated to 40, and the radiation irradiation efficiency can be improved.
- the total light transmittance of the adhesive laminated film 50 can be measured in accordance with JIS K7105 (1981).
- the total thickness of the adhesive laminated film 50 according to the present embodiment is preferably 25 ⁇ m to 1100 ⁇ m, more preferably 100 ⁇ m to 900 ⁇ m, and still more preferably 200 ⁇ m or more, from the balance of mechanical properties and handleability. It is 800 ⁇ m or less.
- the adhesive laminated film 50 which concerns on this embodiment may have provided the contact bonding layer (not shown) between each layer. According to this adhesive layer, the adhesiveness between each layer can be improved.
- the uneven absorbent resin layer 30 is formed on one surface of the base layer 20 by an extrusion laminating method.
- the pressure-sensitive adhesive coating liquid is applied onto the unevenness-absorbing resin layer 30 and dried to form the pressure-sensitive adhesive resin layer 40, whereby the pressure-sensitive adhesive laminated film 50 is obtained.
- the base material layer 20 and the unevenness absorbing resin layer 30 may be formed by co-extrusion molding, or the film-like base layer 20 and the film unevenness absorbing resin layer 30 are laminated (laminated). You may form.
- Step (A) First, the electronic component 10 having the circuit forming surface 10A, and the adhesive laminated film 50 in which the adhesive resin layer 40 side is attached to the circuit forming surface 10A of the electronic component 10 so as to protect the circuit forming surface 10A. Prepare the structure 60.
- Such a structural body 60 can be produced, for example, by sticking the electronic component 10 having the circuit forming surface 10A on the adhesive resin layer 40 of the adhesive laminated film 50.
- the number of the electronic components 10 stuck on the adhesive resin layer 40 of the adhesive laminated film 50 may be one, or two or more.
- a method of manufacturing the structure 60 will be described.
- the electronic component 10 is attached onto the adhesive resin layer 40 of the adhesive laminated film 50.
- the electronic component 10 to be attached to the adhesive laminated film 50 is not particularly limited as long as it has a circuit formation surface and is required to have an electromagnetic wave shielding property, but, for example, a semiconductor wafer, a mold wafer, a mold panel, a mold An array package, a semiconductor substrate, etc. are mentioned.
- the semiconductor substrate include a silicon substrate, a sapphire substrate, a germanium substrate, a germanium-arsenic substrate, a gallium-phosphorus substrate, a gallium-arsenic-aluminum substrate, a gallium-arsenic substrate, a lithium tantalate substrate, and the like.
- the electronic component 10 may be an electronic component for any application, but for example, electronic components for logic (for example, for communication, high frequency signal processing, etc.), for memory, for sensors, for power supply etc. It can be mentioned. These may be used alone or in combination of two or more.
- the circuit forming surface 10A of the electronic component 10 is, for example, an uneven surface by having the electrode 10B. Further, when mounting the electronic device on the mounting surface, the electrode 10B is joined to the electrode formed on the mounting surface to electrically connect the electronic device to the mounting surface (the mounting surface such as a printed board). It forms the connection.
- the electrode 10B include bump electrodes such as ball bumps, printed bumps, stud bumps, plated bumps, and pillar bumps. That is, the electrode 10B is usually a convex electrode. These bump electrodes may be used alone or in combination of two or more. Further, the metal type constituting the bump electrode is not particularly limited, and examples thereof include silver, gold, copper, tin, lead, bismuth and alloys thereof. These metal species may be used alone or in combination of two or more.
- Step (B) Next, in a state of being attached to the adhesive laminated film 50, the surface (hereinafter also referred to as a back surface) opposite to the circuit forming surface 10A of the electronic component 10 is back ground.
- back grinding means thinning to a predetermined thickness without breaking or damaging the electronic component 10.
- the back grinding of the electronic component 10 can be performed by a known method.
- the structure 60 is fixed to the chuck table etc. of a grinder, and the method of grinding the back surface (circuit non-formation surface) of the electronic component 10 is mentioned.
- grinding can be performed while cooling the water over the electronic component 10 and the grinding wheel.
- Step (C) Next, in a state of being attached to the adhesive laminated film 50, the back ground electronic component 10 is diced.
- the dicing of the electronic component 10 can be performed by a known method.
- (B) An operation of obtaining a plurality of electronic components 10 (hereinafter, also referred to as “stealth dicing”) by providing a modified region which does not reach cutting of the electronic component 10 to the electronic component 10 by irradiating laser light. Is included.
- the above-mentioned dicing can be performed under known conditions using a dicing blade (dicing saw), a laser beam or the like.
- the electronic component 10 When the dicing is full cut dicing, the electronic component 10 is divided into a plurality of electronic components 10 by dicing. On the other hand, when the dicing is stealth dicing, the electronic component 10 can not be divided into the plurality of electronic components 10 only by the dicing, and the electronic component 10 can be obtained by the expansion of the adhesive laminated film 50 after dicing. A plurality of divided electronic components 10 can be obtained by being divided.
- Step (D) Next, the electromagnetic wave shield layer 70 is formed on the singulated electronic component 10 in a state of being attached to the adhesive laminated film 50.
- the electromagnetic wave shielding layer 70 is formed on the opposing surface facing the circuit forming surface 10A of the electronic component 10 and the side surface connecting the circuit forming surface 10A and the opposing surface. Form.
- a well-known method can be used.
- a sputtering method, a vapor deposition method, a spray coating method, an electrolytic plating method, an electroless plating method and the like can be mentioned.
- sputtering method for example, a DC sputtering method, an RF sputtering method, a magnetron sputtering method, an ion beam sputtering method, a reactive sputtering method and the like can be mentioned. These may use only 1 type and may use 2 or more types together.
- a vacuum deposition method As a vapor deposition method, a vacuum evaporation method, a chemical vapor deposition method (CVD method) etc. are mentioned, for example. These may use only 1 type and may use 2 or more types together.
- the vacuum deposition method include molecular beam epitaxy (MBE), physical vapor deposition (PVD) and the like. These may use only 1 type and may use 2 or more types together.
- the CVD method include thermal CVD method, catalytic CVD method, photo CVD method, plasma CVD method, laser CVD method, epitaxial CVD method, atomic layer CVD method, organic metal CVD method, chloride CVD method and the like. These may use only 1 type and may use 2 or more types together.
- the magnetron sputtering method, plasma CVD and the like are preferable from the viewpoint that the load temperature can be kept relatively low.
- the material which comprises the electromagnetic wave shield layer 70 is electroconductive.
- the electrical resistivity at 20 ° C. has a conductivity of 10000 ⁇ ⁇ cm or less.
- the electric resistivity is more preferably 200 ⁇ ⁇ cm or less, and particularly preferably 100 ⁇ ⁇ cm or less.
- the conductive component constituting the electromagnetic wave shielding layer 70 is not particularly limited, but a metal is preferable.
- the film thickness of the electromagnetic wave shielding layer 70 is not particularly limited as long as it can exhibit shielding properties, but is preferably 100 ⁇ m or less, and more preferably 50 ⁇ m or less.
- the maximum thin film thickness is not particularly limited, but is preferably 0.5 ⁇ m or more.
- Step (E) When the electromagnetic wave shield layer 70 is formed in the step (D) described above, the unevenness absorbing resin layer 30 may be heated to a high temperature by a sputtering method or a vapor deposition method. Also in the electrolytic plating method and the electroless plating method, the uneven absorbent resin layer 30 may be exposed to a high temperature also by the post-process of annealing the electromagnetic wave shield layer 70. Therefore, in the method of manufacturing the electronic device according to the present embodiment, the heat resistance of the concavo-convex absorbent resin layer 30 can be obtained by crosslinking the concavo-convex absorbent resin layer 30 between the step (A) and the step (D). It is preferable to further include the improvement step (E).
- the timing of performing the step (E) is not particularly limited as long as it is between the step (A) and the step (D), and may be performed at any timing.
- the method of crosslinking the uneven absorbent resin layer 30 is not particularly limited as long as it can crosslink the crosslinkable resin, but crosslinking by a radical polymerization initiator; crosslinking by sulfur or a sulfur compound; ultraviolet light, electron beam, ⁇ ray, etc.
- Crosslinking methods such as crosslinking by radiation may be mentioned.
- a radical polymerization initiator used for crosslinking of a crosslinkable resin can be used.
- the radical polymerization initiator known thermal radical polymerization initiators, photo radical polymerization initiators and these can be used in combination.
- the unevenness absorbing resin layer 30 may be crosslinked by blending a vulcanization accelerator, a vulcanization acceleration auxiliary agent, and the like. Moreover, you may mix
- FIG. 1 A crosslinking adjuvant with the uneven
- Step (F) Further, in the method of manufacturing the electronic device according to the embodiment, the step (F) of peeling the electronic component 10 and the adhesive laminated film 50 after the step (D) may be further performed. By performing this step (F), the electronic component 10 can be peeled off from the adhesive laminated film 50. Peeling between the electronic component 10 and the adhesive laminate film 50 can be performed by a known method.
- the adhesive lamination is performed in a state in which the area of the adhesive laminated film 50 to which the electronic component 10 is attached is expanded in the in-plane direction of the film to expand the distance between the adjacent electronic components 10. It is preferable to peel off the electronic component 10 from the film 50. By doing this, the interval between the adjacent electronic components 10 is expanded, so the electronic components 10 are easily peeled off from the adhesive laminated film 50. Furthermore, the adhesive force between the electronic component 10 and the adhesive resin layer 40 is reduced due to the shear stress between the electronic component 10 and the adhesive resin layer 40 which is generated by the in-plane direction expansion of the adhesive resin layer 40. Component 10 can be easily peeled off from the adhesive laminated film 50.
- Step (G) In the method of manufacturing the electronic device according to the present embodiment, the adhesive resin layer 40 is irradiated with radiation before the step (F) to crosslink the adhesive resin layer 40, whereby the adhesive resin for the electronic component 10 is produced.
- the step (G) of reducing the adhesion of the layer 40 may be further performed.
- the timing at which the step (G) is performed is not particularly limited as long as it is between the step (A) and the step (F), and may be performed at any timing.
- the step (G) the electronic component 10 can be easily peeled off from the adhesive resin layer 40. Moreover, it can suppress that the surface of the electronic component 10 is contaminated by the adhesive component which comprises the adhesive resin layer 40.
- FIG. Radiation is irradiated from the surface on the opposite side to the surface at the side of the adhesive resin layer 40 of the adhesive laminated film 50, for example.
- the method of manufacturing an electronic device according to the present embodiment may have other steps other than the above.
- a well-known process in the manufacturing method of an electronic device can be used. For example, after the step (B) of back grinding, a protective film may be attached to the ground surface (surface without circuit), and then the film may be cured to form a back surface protective layer.
- the step (F) is performed, the step is generally performed in a step of mounting the obtained electronic component 10 on a mounting substrate (printed substrate etc.), a wire bonding step, a sealing step, etc. Further, optional steps may be performed.
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Abstract
Description
このような電子部品の電磁波シールド性に関する技術としては、例えば、特許文献1(国際公開第2010/029819号パンフレット)に記載のものが挙げられる。
まず、本発明者らは、従来の電子装置の製造方法において、図3に示すように電子部品100の回路形成面100Aを回路形成面保護用テープ130で保護した状態で電子部品100の表面に電磁波シールド層140を形成する場合、電子部品100の側面の下端部150に電磁波シールド層140が形成されない場合があることを知見した。この場合、電子部品100の電磁波シールド性が劣ってしまう。
回路形成面を有する電子部品と、基材層および粘着性樹脂層を有するとともに、上記回路形成面を保護するように上記電子部品の上記回路形成面に上記粘着性樹脂層側が貼り付けられた粘着性積層フィルムと、を備える構造体を準備する工程(A)と、
上記粘着性積層フィルムに貼り付けられた状態で、上記電子部品の上記回路形成面とは反対側の面をバックグラインドする工程(B)と、
上記粘着性積層フィルムに貼り付けられた状態で、上記電子部品をダイシングする工程(C)と、
上記粘着性積層フィルムに貼り付けられた状態で、個片化された上記電子部品に対して電磁波シールド層を形成する工程(D)と、
をこの順番に含み、
上記工程(A)、上記工程(B)、上記工程(C)および上記工程(D)において、上記粘着性積層フィルムとして同一の粘着性積層フィルムを使用する電子装置の製造方法。
[2]
上記[1]に記載の電子装置の製造方法において、
上記粘着性積層フィルムは、上記基材層と上記粘着性樹脂層との間に凹凸吸収性樹脂層をさらに有する電子装置の製造方法。
[3]
上記[2]に記載の電子装置の製造方法において、
上記工程(A)と上記工程(D)との間に、上記凹凸吸収性樹脂層を架橋させることで、上記凹凸吸収性樹脂層の耐熱性を向上させる工程(E)をさらに含む電子装置の製造方法。
[4]
上記[2]または[3]に記載の電子装置の製造方法において、
上記凹凸吸収性樹脂層が架橋性樹脂を含む電子装置の製造方法。
[5]
上記[2]乃至[4]のいずれか一つに記載の電子装置の製造方法において、
上記凹凸吸収性樹脂層の厚みが10μm以上1000μm以下である電子装置の製造方法。
[6]
上記[1]乃至[5]のいずれか一つに記載の電子装置の製造方法において、
上記工程(D)の後に上記電子部品と上記粘着性積層フィルムとを剥離する工程(F)をさらに含む電子装置の製造方法。
[7]
上記[6]に記載の電子装置の製造方法において、
上記工程(F)では、上記粘着性積層フィルムにおける上記電子部品が貼り付けられた領域をフィルムの面内方向に拡張させて、隣接する上記電子部品間の間隔を拡大させた状態で、上記粘着性積層フィルムから上記電子部品を剥離する電子装置の製造方法。
[8]
上記[6]または[7]に記載の電子装置の製造方法において、
上記粘着性樹脂層は放射線架橋型粘着剤を含み、
上記工程(F)の前に、上記粘着性樹脂層に対して放射線を照射して上記粘着性樹脂層を架橋させる工程(G)をさらに含む電子装置の製造方法。
[9]
上記[1]乃至[8]のいずれか一つに記載の電子装置の製造方法において、
上記電子部品の上記回路形成面はバンプ電極を含む電子装置の製造方法。
[10]
上記[9]に記載の電子装置の製造方法において、
上記バンプ電極の高さをH[μm]とし、上記凹凸吸収性樹脂層の厚みをd[μm]としたとき、H/dが0.01以上1以下である電子装置の製造方法。
[11]
上記[1]乃至[10]のいずれか一つに記載の電子装置の製造方法において、
上記工程(D)では、スパッタリング法、蒸着法、スプレーコーティング法、電解メッキ法および無電解メッキ法から選択される少なくとも一種の方法を用いて上記電子部品に対して上記電磁波シールド層を形成する電子装置の製造方法。
[12]
上記[1]乃至[11]のいずれか一つに記載の電子装置の製造方法において、
上記工程(D)では、少なくとも上記電子部品における上記回路形成面に対向する対向面および上記回路形成面と上記対向面とを繋ぐ側面に対して上記電磁波シールド層を形成する電子装置の製造方法。
[13]
上記[1]乃至[12]のいずれか一つに記載の電子装置の製造方法において、
上記基材層を構成する樹脂がポリエステル系エラストマー、ポリアミド系エラストマー、ポリイミド系エラストマー、ポリブチレンテレフタレート、ポリエチレンテレフタレート、ポリエチレンナフタレート、およびポリイミドからなる群から選択される一種または二種以上を含む電子装置の製造方法。
[14]
上記[1]乃至[13]のいずれか一つに記載の電子装置の製造方法において、
上記粘着性樹脂層を構成する粘着剤が(メタ)アクリル系粘着剤、シリコーン系粘着剤、ウレタン系粘着剤、オレフィン系粘着剤およびスチレン系粘着剤から選択される一種または二種以上を含む電子装置の製造方法。
(A)回路形成面10Aを有する電子部品10と、基材層20および粘着性樹脂層40を有するとともに、回路形成面10Aを保護するように電子部品10の回路形成面10Aに粘着性樹脂層40側が貼り付けられた粘着性積層フィルム50と、を備える構造体60を準備する工程
(B)粘着性積層フィルム50に貼り付けられた状態で、電子部品10の回路形成面10Aとは反対側の面をバックグラインドする工程
(C)粘着性積層フィルム50に貼り付けられた状態で、電子部品10をダイシングする工程
(D)粘着性積層フィルム50に貼り付けられた状態で、個片化された電子部品10に対して電磁波シールド層70を形成する工程
バックグラインド工程、ダイシング工程および電磁波シールド層形成工程において、電子部品10の回路形成面10Aを保護するフィルムとして、同じ粘着性積層フィルム50を使用すると、図3に示すようなダイシングテープ120に貼り付けられた電子部品100を回路形成面保護用テープ130に再配列する工程を省略することができる。そのため、電子部品10の側面の下端部が粘着性樹脂層40を構成する粘着剤によって覆われてしまうという現象が発生しない。そのため、本実施形態に係る電子装置の製造方法では、電子部品10の側面の下端部まで電磁波シールド層70を良好に形成することができる。
また、本実施形態に係る電子装置の製造方法では、バックグラインド工程、ダイシング工程および電磁波シールド層形成工程において、電子部品10の回路形成面10Aを保護するフィルムとして、同じ粘着性積層フィルム50を使用することにより、電子部品10を各テープに貼り付ける工程や電子部品10を各テープから剥がす工程等の一部を省略できる。
以上のように、本実施形態に係る電子装置の製造方法によれば、電子部品に対して電磁波シールド層を良好に形成できるとともに、電子装置の製造工程を短縮することが可能となる。
以下、本実施形態に係る電子装置の製造方法で用いる粘着性積層フィルム50について説明する。
基材層20は、粘着性積層フィルム50の取り扱い性や機械的特性、耐熱性等の特性をより良好にすることを目的として設けられる層である。
基材層20は特に限定されないが、例えば、樹脂フィルムが挙げられる。
基材層20を構成する樹脂としては、公知の熱可塑性樹脂を用いることができる。例えば、ポリエチレン、ポリプロピレン、ポリ(4-メチル-1-ペンテン)、ポリ(1-ブテン)等のポリオレフィン;ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエチレンナフタレート等のポリエステル;ナイロン-6、ナイロン-66、ポリメタキシレンアジパミド等のポリアミド;ポリアクリレート;ポリメタアクリレート;ポリ塩化ビニル;ポリイミド;ポリエーテルイミド;ポリアミドイミド;エチレン・酢酸ビニル共重合体;ポリアクリロニトリル;ポリカーボネート;ポリスチレン;アイオノマー;ポリスルホン;ポリエーテルスルホン;ポリエーテルエーテルケトン;ポリフェニレンスルフィド;ポリフェニレンエーテル;ポリエステル系エラストマー、ポリアミド系エラストマー、ポリイミド系エラストマー、ポリブチレンテレフタレート等のエラストマー;等から選択される一種または二種以上を挙げることができる。
これらの中でも、透明性を良好にする観点から、ポリプロピレン、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリアミド、ポリイミド、エチレン・酢酸ビニル共重合体、ポリエステル系エラストマー、ポリアミド系エラストマー、ポリイミド系エラストマー、およびポリブチレンテレフタレートから選択される一種または二種以上が好ましく、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリエステル系エラストマー、ポリアミド系エラストマー、ポリイミド系エラストマー、ポリブチレンテレフタレートおよびポリイミドから選択される一種または二種以上がより好ましい。
また、粘着性積層フィルム50の柔軟性や伸縮性等の特性と耐熱性とのバランスを向上させる観点から、基材層20を構成する樹脂としては、ポリエステル系エラストマー、ポリアミド系エラストマー、ポリイミド系エラストマー、およびポリブチレンテレフタレート等から選択される一種または二種以上がさらに好ましい。これにより、粘着性積層フィルム50の伸縮性や柔軟性が向上し、工程(D)の後に電子部品10と粘着性積層フィルム50とを剥離する際に粘着性積層フィルム50を面内方向に拡張させることがより一層容易になり、粘着性積層フィルム50から電子部品10を剥離し易くなる。
このような基材層20を用いると、工程(D)において粘着性積層フィルム50が高温に曝されても粘着性積層フィルム50の変形や溶融をより一層抑制することができる。
また、基材層20を形成するために使用する樹脂フィルムの形態としては、延伸フィルムであってもよいし、一軸方向または二軸方向に延伸したフィルムであってもよい。
基材層20は他の層との接着性を改良するために、表面処理を行ってもよい。具体的には、コロナ処理、プラズマ処理、アンダーコート処理、プライマーコート処理等を行ってもよい。
本実施形態に係る粘着性積層フィルム50は、基材層20と粘着性樹脂層40との間に凹凸吸収性樹脂層30をさらに有することが好ましい。
凹凸吸収性樹脂層30は、粘着性積層フィルム50の回路形成面10Aへの追従性を良好にし、回路形成面10Aと粘着性積層フィルム50との密着性を良好にすることを目的として設けられる層である。
ここで、本発明者らの検討によれば、電子部品の回路形成面を保護フィルムで保護した状態で電子部品の表面に電磁波シールド層を形成する際に、電磁波シールド層を形成するための導電性成分が電子部品の回路形成面に入り込んで回路に付着し、その結果、回路が電気的に短絡してしまう場合があるという課題を見出した。また、回路形成面の凹凸が大きいほど回路形成面を構成する回路が電気的に短絡しやすかった。特に、電子部品の回路形成面上に、バンプ電極が形成された電子部品を用いる場合、回路形成面を構成する回路が電気的に短絡しやすい傾向にあった。
本発明者らは、上記課題を達成するために鋭意検討を重ねた。その結果、電子部品と保護フィルムとの間の密着性が不十分である場合、電磁波シールド層を形成するための導電性成分が電子部品の回路形成面に入り込みやすく、回路の導通不良を引き起こしやすいことを知見した。
特に、回路形成面にバンプ電極等の比較的大きな凹凸が形成された電子部品を使用する場合、電子部品の回路形成面の凹凸に対する保護フィルムの追従性が不十分になりやすいため、電子部品と保護フィルムとの間の密着性が不十分になりやすい。その結果、電磁波シールド層を形成するための導電性成分が電子部品の回路形成面に浸入し易くなり、回路形成面を構成する回路の導通不良が起こりやすくなることを知見した。
本発明者らは、上記知見をもとにさらに検討を重ねた。その結果、電子部品10の回路形成面10Aを保護するフィルムとして、基材層20、凹凸吸収性樹脂層30および粘着性樹脂層40をこの順番に有する粘着性積層フィルム50を使用することにより、回路形成面10Aの電気的な短絡を抑制でき、電磁波シールド性を有する電子装置を安定的に得ることができることを見出した。
すなわち、粘着性積層フィルム50が凹凸吸収性樹脂層30をさらに有することで、粘着性積層フィルム50が電子部品10の回路形成面10Aに追従し易くなり、粘着性積層フィルム50と電子部品10の回路形成面10Aとの間の密着性を向上させることができる。これにより、電子部品10の回路形成面10Aの凹凸を追従し易くなり、粘着性積層フィルム50と電子部品10の回路形成面10Aとの間の隙間をより小さくできる。その結果、電子部品10の表面に電磁波シールド層70を形成する際に、電磁波シールド層70を形成するための導電性成分が電子部品10の回路形成面10Aに入り込むことを抑制でき、回路形成面10Aを構成する回路の電気的な短絡を抑制することができる。
本実施形態に係る架橋性樹脂としては凹凸吸収性樹脂層30を形成でき、かつ、熱や光等の外部刺激によって架橋して耐熱性が向上する樹脂であれば特に限定されないが、例えば、エチレンおよび炭素数3~20のα-オレフィンとを含むエチレン・α-オレフィン共重合体、高密度エチレン系樹脂、低密度エチレン系樹脂、中密度エチレン系樹脂、超低密度エチレン系樹脂、直鎖状低密度ポリエチレン(LLDPE)系樹脂、プロピレン(共)重合体、1-ブテン(共)重合体、4-メチルペンテン-1(共)重合体、エチレン・環状オレフィン共重合体、エチレン・α-オレフィン・環状オレフィン共重合体、エチレン・α-オレフィン・非共役ポリエン共重合体、エチレン・α-オレフィン・共役ポリエン共重合体、エチレン・芳香族ビニル共重合体、エチレン・α-オレフィン・芳香族ビニル共重合体等のオレフィン系樹脂;エチレン・不飽和無水カルボン酸共重合体、エチレン・α-オレフィン・不飽和無水カルボン酸共重合体等のエチレン・無水カルボン酸系共重合体;エチレン・エポキシ含有不飽和化合物共重合体、エチレン・α-オレフィン・エポキシ含有不飽和化合物共重合体等のエチレン・エポキシ系共重合体;エチレン・(メタ)アクリル酸エチル共重合体、エチレン・(メタ)アクリル酸メチル共重合体、エチレン・(メタ)アクリル酸プロピル共重合体、エチレン・(メタ)アクリル酸ブチル共重合体、エチレン・(メタ)アクリル酸ヘキシル共重合体、エチレン・(メタ)アクリル酸-2-ヒドロキシエチル共重合体、エチレン・(メタ)アクリル酸-2-ヒドロキシプロピル共重合体、エチレン・(メタ)アクリル酸グリシジル共重合体等のエチレン・(メタ)アクリル酸エステル共重合体;エチレン・(メタ)アクリル酸共重合体、エチレン・マレイン酸共重合体、エチレン・フマル酸共重合体、エチレン・クロトン酸共重合体等のエチレン・エチレン性不飽和酸共重合体;エチレン・酢酸ビニル共重合体、エチレン・プロピオン酸ビニル共重合体、エチレン・酪酸ビニル共重合体、エチレン・ステアリン酸ビニル共重合体等のエチレン・ビニルエステル共重合体;エチレン・スチレン共重合体等;(メタ)アクリル酸エステル(共)重合体等の不飽和カルボン酸エステル(共)重合体;エチレン・アクリル酸金属塩共重合体、エチレン・メタアクリル酸金属塩共重合体等のアイオノマー樹脂;ウレタン系樹脂;シリコーン系樹脂;アクリル酸系樹脂;メタアクリル酸系樹脂;環状オレフィン(共)重合体;α-オレフィン・芳香族ビニル化合物・芳香族ポリエン共重合体;エチレン・α-オレフィン・芳香族ビニル化合物;芳香族ポリエン共重合体;エチレン・芳香族ビニル化合物・芳香族ポリエン共重合体;スチレン系樹脂;アクリロニトリル・ブタジエン・スチレン共重合体;スチレン・共役ジエン共重合体;アクリロニトリル・スチレン共重合体;アクリロニトリル・エチレン・α-オレフィン・非共役ポリエン・スチレン共重合体;アクリロニトリル・エチレン・α-オレフィン・共役ポリエン・スチレン共重合体;メタアクリル酸・スチレン共重合体;エチレンテレフタレート樹脂;フッ素樹脂;ポリエステルカーボネート;ポリ塩化ビニル;ポリ塩化ビニリデン;ポリオレフィン系熱可塑性エラストマー;ポリスチレン系熱可塑性エラストマー;ポリウレタン系熱可塑性エラストマー;1,2-ポリブタジエン系熱可塑性エラストマー;トランスポリイソプレン系熱可塑性エラストマー;塩素化ポリエチレン系熱可塑性エラストマー;液晶性ポリエステル;ポリ乳酸等から選択される一種または二種以上を用いることができる。
エチレンおよび炭素数3~20のα-オレフィンからなるエチレン・α-オレフィン共重合体、低密度エチレン系樹脂、超低密度エチレン系樹脂、直鎖状低密度ポリエチレン(LLDPE)系樹脂、エチレン・α-オレフィン・非共役ポリエン共重合体、エチレン・α-オレフィン・共役ポリエン共重合体、エチレン・不飽和無水カルボン酸共重合体、エチレン・α-オレフィン・不飽和無水カルボン酸共重合体、エチレン・エポキシ含有不飽和化合物共重合体、エチレン・α-オレフィン・エポキシ含有不飽和化合物共重合体、エチレン・酢酸ビニル共重合体、エチレン・アクリル酸共重合体、エチレン・メタアクリル酸共重合体等のエチレン・不飽和カルボン酸共重合体から選択される一種または二種以上を用いることがより好ましい。
エチレンおよび炭素数3~20のα-オレフィンからなるエチレン・α-オレフィン共重合体、低密度エチレン系樹脂、超低密度エチレン系樹脂、直鎖状低密度ポリエチレン(LLDPE)系樹脂、エチレン・α-オレフィン・非共役ポリエン共重合体、エチレン・α-オレフィン・共役ポリエン共重合体、エチレン・酢酸ビニル共重合体、エチレン・アクリル酸共重合体、エチレン・メタアクリル酸共重合体等のエチレン・不飽和カルボン酸共重合体から選択される一種または二種以上を用いることがさらに好ましい。
これらの中でも、エチレン・α-オレフィン共重合体およびエチレン・酢酸ビニル共重合体から選択される少なくとも一種が特に好ましく使用される。なお本実施形態においては上述した樹脂は、単独で用いてもよいし、ブレンドして用いてもよい。
また、電子部品10の回路形成面10Aに存在するバンプ電極の高さをH[μm]とし、凹凸吸収性樹脂層30の厚みをd[μm]としたとき、H/dが1以下であることが好ましく、0.85以下であることがより好ましく、0.7以下であることがさらに好ましい。H/dが上記上限値以下であると、粘着性積層フィルム50の厚みをより薄くしつつ、凹凸吸収性をより良好にすることができる。
H/dの下限は特に限定されないが、例えば、0.01以上であり、好ましくは0.1以上であり、さらに好ましくは0.3以上である。バンプ電極の高さは、一般的に2μm以上600μm以下である。
ここで、本発明者らの検討によれば、回路形成面の凹凸が大きいほど回路形成面を構成する回路が電気的に短絡しやすいことが明らかになった。そのため、バンプ電極の高さが好ましくは10μm以上、より好ましくは30μm以上、さらに好ましくは50μm以上、さらにより好ましくは80μm以上、特に好ましくは100μm以上のとき、本実施形態に係る電子装置の製造方法の効果をより一層効果的に得ることができる。
粘着性樹脂層40は、基材層20または凹凸吸収性樹脂層30の一方の面側に設けられる層であり、粘着性積層フィルム50を電子部品10の回路形成面10Aに貼り付ける際に、電子部品10の回路形成面10Aに接触して粘着する層である。
放射線架橋型粘着剤としては、紫外線架橋型粘着剤が好ましい。
また、(メタ)アクリル系共重合体を構成するコモノマーとしては、例えば、酢酸ビニル、(メタ)アクリルニトリル、スチレン、(メタ)アクリル酸、イタコン酸、(メタ)アクリルアマイド、メチロール(メタ)アクリルアマイド、無水マレイン酸等が挙げられる。これらのコモノマーは一種単独で用いてもよく、二種以上を併用して用いてもよい。
なお、(メタ)アクリル系重合体が、ポリマーの側鎖に炭素-炭素二重結合を有する放射線架橋型ポリマーである場合は、架橋性化合物を加えなくてもよい。
架橋剤の含有量は、粘着性樹脂層40の耐熱性や密着力とのバランスを向上させる観点から、(メタ)アクリル系重合体100質量部に対し、0.1質量部以上10質量部以下であることが好ましい。
粘着剤塗布液を塗布する方法としては、従来公知の塗布方法、例えば、ロールコーター法、リバースロールコーター法、グラビアロール法、バーコート法、コンマコーター法、ダイコーター法等が採用できる。塗布された粘着剤の乾燥条件には特に制限はないが、一般的には、80~200℃の温度範囲において、10秒~10分間乾燥することが好ましい。更に好ましくは、80~170℃において、15秒~5分間乾燥する。架橋剤と粘着剤との架橋反応を十分に促進させるために、粘着剤塗布液の乾燥が終了した後、40~80℃において5~300時間程度加熱してもよい。
まず、基材層20の一方の面に凹凸吸収性樹脂層30を押出しラミネート法によって形成する。次いで、凹凸吸収性樹脂層30上に粘着剤塗布液を塗布し乾燥させることによって、粘着性樹脂層40を形成し、粘着性積層フィルム50が得られる。
また、基材層20と凹凸吸収性樹脂層30とは共押出成形によって形成してもよいし、フィルム状の基材層20とフィルム状の凹凸吸収性樹脂層30とをラミネート(積層)して形成してもよい。
次に、本実施形態に係る電子装置の製造方法の各工程について説明する。
はじめに、回路形成面10Aを有する電子部品10と、回路形成面10Aを保護するように電子部品10の回路形成面10Aに粘着性樹脂層40側が貼り付けられた粘着性積層フィルム50と、を備える構造体60を準備する。
以下、構造体60の製造方法について説明する。
粘着性積層フィルム50に貼り付ける電子部品10としては回路形成面を有し、かつ、電磁波シールド性が求められる電子部品であれば特に限定されないが、例えば、半導体ウエハ、モールドウエハ、モールドパネル、モールドアレイパッケージ、半導体基板等が挙げられる。
また、半導体基板としては、例えば、シリコン基板、サファイア基板、ゲルマニウム基板、ゲルマニウム-ヒ素基板、ガリウム-リン基板、ガリウム-ヒ素-アルミニウム基板、ガリウム-ヒ素基板、タンタル酸リチウム基板等が挙げられる。
また、電極10Bは、電子装置を実装面に実装する際に、実装面に形成された電極に対して接合されて、電子装置と実装面(プリント基板等の実装面)との間の電気的接続を形成するものである。
電極10Bとしては、例えば、ボールバンプ、印刷バンプ、スタッドバンプ、めっきバンプ、ピラーバンプ等のバンプ電極が挙げられる。すなわち、電極10Bは、通常凸電極である。これらのバンプ電極は1種単独で用いてもよく2種以上を併用してもよい。
また、バンプ電極を構成する金属種は特に限定されず、例えば、銀、金、銅、錫、鉛、ビスマス及びこれらの合金等が挙げられる。これらの金属種は1種単独で用いてもよく2種以上を併用してもよい。
次に、粘着性積層フィルム50に貼り付けられた状態で、電子部品10の回路形成面10Aとは反対側の面(以下、裏面とも呼ぶ。)をバックグラインドする。
ここで、バックグラインドするとは、電子部品10を割ったり、破損したりすることなく、所定の厚みまで薄化加工することを意味する。
電子部品10のバックグラインドは、公知の方法で行うことができる。例えば、研削機のチャックテーブル等に構造体60を固定し、電子部品10の裏面(回路非形成面)を研削する方法が挙げられる。
次いで、粘着性積層フィルム50に貼り付けられた状態で、バックグラインドを行った電子部品10をダイシングする。電子部品10のダイシングは、公知の方法で行うことができる。
ここでいう「ダイシング」には、
(a)電子部品10に対してこの電子部品10の厚さと同じ深さの切れ込みを設けることによって電子部品10を分断し、複数の分断された電子部品10を得る操作(以下、「フルカットダイシング」ともいう。)、および、
(b)レーザー光を照射することにより、電子部品10に対し、電子部品10の切断までには至らない変質領域を設け、複数の電子部品10を得る操作(以下、「ステルスダイシング」ともいう。)が含まれる。
上記ダイシングは、ダイシングブレード(ダイシングソー)、レーザー光等を用いて公知の条件で行うことができる。
一方、ダイシングがステルスダイシングである場合には、ダイシングのみによっては電子部品10が複数の電子部品10に分断されるまでには至らず、ダイシング後の粘着性積層フィルム50の拡張によって電子部品10が分断されて複数の分断された電子部品10が得られる。
次に、粘着性積層フィルム50に貼り付けられた状態で、個片化された電子部品10に対して電磁波シールド層70を形成する。
工程(D)では、例えば、図2(D)に示すように電子部品10における回路形成面10Aに対向する対向面および回路形成面10Aと対向面とを繋ぐ側面に対して電磁波シールド層70を形成する。
真空蒸着法としては、例えば、分子線エピタキシー法(MBE法)、物理気相成長法(PVD法)等が挙げられる。これらは1種のみを用いてもよく2種以上を併用してもよい。
CVD法としては、例えば、熱CVD法、触媒CVD法、光CVD法、プラズマCVD法、レーザーCVD法、エピタキシャルCVD法、アトミックレイヤーCVD法、有機金属CVD法、クロライドCVD法等が挙げられる。これらは1種のみを用いてもよく2種以上を併用してもよい。
これらの各種の乾式成膜法のなかでも、負荷温度を比較的低く抑えることができるという観点では、マグネトロンスパッタリング法、プラズマCVD等が好ましい。
電磁波シールド層70を構成する導電性成分は特に限定されないが、金属が好ましく、例えば、Mg、Al、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Nb、Mo、Ru、Rh、Pd、Ag、In、Sn、Sb、W、Re、Ir、Pt、Au、Bi等の金属、これらの金属から選ばれる2種以上の金属を含んだ合金、酸化物(ITO(In2O3-SnO2)、ATO(SnO2-Sb)、FTO(SnO2-F)等)等を用いることができる。これらは1種のみを用いてもよく2種以上を併用してもよい。
これらのなかでは、Au、Pt、Ag、Cu、Ni、Al及びFeのうちの1種又は2種以上を含む金属膜、ITO膜、ATO膜が好ましい。
前述した工程(D)において電磁波シールド層70を形成する際に、スパッタリング法や蒸着法により、凹凸吸収性樹脂層30が高温に加温されることがある。また電解メッキ法や無電解メッキ法においても、電磁波シールド層70をアニーリングする後工程によって、やはり凹凸吸収性樹脂層30が高温に曝されることがある。したがって、本実施形態に係る電子装置の製造方法において、工程(A)と工程(D)との間に、凹凸吸収性樹脂層30を架橋させることで、凹凸吸収性樹脂層30の耐熱性を向上させる工程(E)をさらに含むことが好ましい。これにより、工程(D)において粘着性積層フィルム50が高温に曝されても粘着性積層フィルム50の変形や溶融をより一層抑制することができる。工程(E)をおこなうタイミングは工程(A)と工程(D)との間であれば特に限定されず、どのタイミングでおこなってもよい。
ラジカル重合開始剤による架橋は、架橋性樹脂の架橋に用いられているラジカル重合開始剤を用いることができる。ラジカル重合開始剤としては、公知の熱ラジカル重合開始剤、光ラジカル重合開始剤およびこれらを併用することができる。
また、いずれの架橋方法においても凹凸吸収性樹脂層30に架橋助剤を配合して凹凸吸収性樹脂層30の架橋をおこなってもよい。
また、本実施形態に係る電子装置の製造方法において、工程(D)の後に電子部品10と粘着性積層フィルム50とを剥離する工程(F)をさらにおこなってもよい。この工程(F)をおこなうことで、粘着性積層フィルム50から電子部品10を剥離することができる。
電子部品10と粘着性積層フィルム50との剥離は、公知の方法で行うことができる。
こうすることにより、隣接する電子部品10間の間隔が拡大するため、粘着性積層フィルム50から電子部品10を剥離し易くなる。さらに、粘着性樹脂層40の面内方向の拡張によって生じる、電子部品10と粘着性樹脂層40とのずり応力により、電子部品10と粘着性樹脂層40との粘着力が低下するため、粘着性積層フィルム50から電子部品10を剥離し易くなる。
本実施形態に係る電子装置の製造方法において、工程(F)の前に粘着性樹脂層40に対して放射線を照射し、粘着性樹脂層40を架橋させることで、電子部品10に対する粘着性樹脂層40の粘着力を低下させる工程(G)をさらにおこなってもよい。工程(G)をおこなうタイミングは工程(A)と工程(F)との間であれば特に限定されず、どのタイミングでおこなってもよい。
工程(G)をおこなうことで、粘着性樹脂層40から電子部品10を容易に剥離し易くなる。また、粘着性樹脂層40を構成する粘着成分により電子部品10の表面が汚染されることを抑制することができる。
放射線は、例えば、粘着性積層フィルム50の粘着性樹脂層40側の面とは反対側の面から照射される。
本実施形態に係る電子装置の製造方法は、上記以外のその他の工程を有していてもよい。その他の工程としては、電子装置の製造方法において公知の工程を用いることができる。
例えば、バックグラインドする工程(B)後に、研削面(回路非形成面)に保護フィルムを張り付けてから、フィルムを硬化し、裏面保護層を形成させてもよい。
Claims (14)
- 回路形成面を有する電子部品と、基材層および粘着性樹脂層を有するとともに、前記回路形成面を保護するように前記電子部品の前記回路形成面に前記粘着性樹脂層側が貼り付けられた粘着性積層フィルムと、を備える構造体を準備する工程(A)と、
前記粘着性積層フィルムに貼り付けられた状態で、前記電子部品の前記回路形成面とは反対側の面をバックグラインドする工程(B)と、
前記粘着性積層フィルムに貼り付けられた状態で、前記電子部品をダイシングする工程(C)と、
前記粘着性積層フィルムに貼り付けられた状態で、個片化された前記電子部品に対して電磁波シールド層を形成する工程(D)と、
をこの順番に含み、
前記工程(A)、前記工程(B)、前記工程(C)および前記工程(D)において、前記粘着性積層フィルムとして同一の粘着性積層フィルムを使用する電子装置の製造方法。 - 請求項1に記載の電子装置の製造方法において、
前記粘着性積層フィルムは、前記基材層と前記粘着性樹脂層との間に凹凸吸収性樹脂層をさらに有する電子装置の製造方法。 - 請求項2に記載の電子装置の製造方法において、
前記工程(A)と前記工程(D)との間に、前記凹凸吸収性樹脂層を架橋させることで、前記凹凸吸収性樹脂層の耐熱性を向上させる工程(E)をさらに含む電子装置の製造方法。 - 請求項2または3に記載の電子装置の製造方法において、
前記凹凸吸収性樹脂層が架橋性樹脂を含む電子装置の製造方法。 - 請求項2乃至4のいずれか一項に記載の電子装置の製造方法において、
前記凹凸吸収性樹脂層の厚みが10μm以上1000μm以下である電子装置の製造方法。 - 請求項1乃至5のいずれか一項に記載の電子装置の製造方法において、
前記工程(D)の後に前記電子部品と前記粘着性積層フィルムとを剥離する工程(F)をさらに含む電子装置の製造方法。 - 請求項6に記載の電子装置の製造方法において、
前記工程(F)では、前記粘着性積層フィルムにおける前記電子部品が貼り付けられた領域をフィルムの面内方向に拡張させて、隣接する前記電子部品間の間隔を拡大させた状態で、前記粘着性積層フィルムから前記電子部品を剥離する電子装置の製造方法。 - 請求項6または7に記載の電子装置の製造方法において、
前記粘着性樹脂層は放射線架橋型粘着剤を含み、
前記工程(F)の前に、前記粘着性樹脂層に対して放射線を照射して前記粘着性樹脂層を架橋させる工程(G)をさらに含む電子装置の製造方法。 - 請求項1乃至8のいずれか一項に記載の電子装置の製造方法において、
前記電子部品の前記回路形成面はバンプ電極を含む電子装置の製造方法。 - 請求項9に記載の電子装置の製造方法において、
前記バンプ電極の高さをH[μm]とし、前記凹凸吸収性樹脂層の厚みをd[μm]としたとき、H/dが0.01以上1以下である電子装置の製造方法。 - 請求項1乃至10のいずれか一項に記載の電子装置の製造方法において、
前記工程(D)では、スパッタリング法、蒸着法、スプレーコーティング法、電解メッキ法および無電解メッキ法から選択される少なくとも一種の方法を用いて前記電子部品に対して前記電磁波シールド層を形成する電子装置の製造方法。 - 請求項1乃至11のいずれか一項に記載の電子装置の製造方法において、
前記工程(D)では、少なくとも前記電子部品における前記回路形成面に対向する対向面および前記回路形成面と前記対向面とを繋ぐ側面に対して前記電磁波シールド層を形成する電子装置の製造方法。 - 請求項1乃至12のいずれか一項に記載の電子装置の製造方法において、
前記基材層を構成する樹脂がポリエステル系エラストマー、ポリアミド系エラストマー、ポリイミド系エラストマー、ポリブチレンテレフタレート、ポリエチレンテレフタレート、ポリエチレンナフタレート、およびポリイミドからなる群から選択される一種または二種以上を含む電子装置の製造方法。 - 請求項1乃至13のいずれか一項に記載の電子装置の製造方法において、
前記粘着性樹脂層を構成する粘着剤が(メタ)アクリル系粘着剤、シリコーン系粘着剤、ウレタン系粘着剤、オレフィン系粘着剤およびスチレン系粘着剤から選択される一種または二種以上を含む電子装置の製造方法。
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JP7464706B2 (ja) | 2020-05-22 | 2024-04-09 | 三井化学東セロ株式会社 | 電子装置の製造方法 |
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Also Published As
Publication number | Publication date |
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EP3657923A1 (en) | 2020-05-27 |
KR102407502B1 (ko) | 2022-06-13 |
KR20200020805A (ko) | 2020-02-26 |
US20200219734A1 (en) | 2020-07-09 |
TWI767027B (zh) | 2022-06-11 |
CN110915318A (zh) | 2020-03-24 |
TW201909365A (zh) | 2019-03-01 |
JP7069168B2 (ja) | 2022-05-17 |
SG11202000343TA (en) | 2020-02-27 |
US11398389B2 (en) | 2022-07-26 |
JPWO2019017226A1 (ja) | 2020-03-26 |
EP3657923A4 (en) | 2021-05-05 |
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