WO2018211635A1 - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
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- WO2018211635A1 WO2018211635A1 PCT/JP2017/018567 JP2017018567W WO2018211635A1 WO 2018211635 A1 WO2018211635 A1 WO 2018211635A1 JP 2017018567 W JP2017018567 W JP 2017018567W WO 2018211635 A1 WO2018211635 A1 WO 2018211635A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 5
- 235000014676 Phragmites communis Nutrition 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 229920000573 polyethylene Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
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Definitions
- the present invention relates to a semiconductor package.
- a monolithically integrated semiconductor element In a monolithically integrated semiconductor element, four distributed feedback semiconductor lasers and four electroabsorption optical modulators having different wavelengths are integrated on an n-type InP substrate.
- the optical output from each modulator passes through a curved waveguide, is multiplexed by an MMI (Multi Mode Interferometer) multiplexer, and is output from the end face of the single waveguide.
- MMI Multi Mode Interferometer
- a waveguide type monitor PD is integrated behind the laser.
- the size can be reduced as compared with the structure in which four existing single channel elements are arranged.
- the number of optical components such as an optical multiplexer can be reduced. For this reason, the optical axis adjustment in the manufacturing process is simplified, and a product can be provided at a low cost.
- the present invention has been made to solve the above-described problems, and its object is to supply a high-frequency signal to a plurality of modulators in a state where crosstalk is small, and to suppress an increase in the number of lead pins.
- the semiconductor package which can be obtained is obtained.
- a semiconductor package includes a stem, a multi-wavelength integrated element that is mounted on the stem, includes a plurality of semiconductor lasers, and a plurality of modulators that respectively modulate output light of the plurality of semiconductor lasers, and the stem And a plurality of leads respectively connected to the plurality of semiconductor lasers and the plurality of modulators, and each lead is a coaxial line in which a plurality of layers are concentrically overlapped, A high-frequency signal line that transmits a high-frequency signal to the modulator; a GND line; and a power supply line that feeds a direct current to the semiconductor laser, wherein the high-frequency signal line is disposed in the center of the coaxial line, and the GND line The power supply line is disposed outside the high-frequency signal line.
- each lead is a coaxial line in which a plurality of layers are concentrically overlapped.
- the high frequency signal line is arranged at the center of the coaxial line, and the GND line is arranged outside the high frequency signal line.
- the high frequency signal can be supplied to a plurality of modulators with a small crosstalk.
- FIG. 1 is a side view showing a semiconductor package according to Embodiment 1 of the present invention.
- FIG. 2 is a top view showing the semiconductor package according to the first embodiment of the present invention.
- This semiconductor package is a TO-CAN package on which a multi-wavelength integrated EML used for a light source for 100 Gb / s CWDM transmission is mounted.
- a Peltier element 2 is provided on a stem body 1 of a circular flat plate.
- a submount mounting portion 3 is provided on the Peltier element 2.
- a submount 4 is mounted on the submount mounting portion 3.
- the multi-wavelength integrated element 5 is mounted on the submount 4.
- the Peltier device 2 controls the temperature of the multi-wavelength integrated device 5.
- the multi-wavelength integrated element 5 includes four semiconductor lasers 6, four modulators 7 that respectively modulate the output lights of the four semiconductor lasers 6, and a multiplexer 8 that combines the output lights of the four modulators 7. It has four monitor photodiodes 9 for monitoring the four semiconductor lasers 6 respectively.
- Four leads 10 penetrate the stem body 1 and are wire-connected to the four semiconductor lasers 6, the modulator 7, and the monitor photodiode 9, respectively.
- a termination resistor 11 is connected to the modulator 7.
- FIG. 3 is a cross-sectional view showing the lead according to Embodiment 1 of the present invention.
- FIG. 4 is a longitudinal sectional view showing the lead according to Embodiment 1 of the present invention.
- Each lead 10 is a coaxial line in which a plurality of layers are concentrically overlapped. As the coaxial line, the high-frequency signal line 12, the insulator 13, the GND line 14, the insulator 15, the feeder line 16, the insulator 17, the feeder line 18, and the insulator 19 are sequentially arranged from the center toward the outside. .
- the high frequency signal line 12 transmits a high frequency signal to the modulator 7.
- the power supply line 16 supplies a direct current to the semiconductor laser 6.
- the power supply line 18 supplies a direct current to the monitor photodiode 9.
- the high frequency signal line 12 is disposed at the center of the coaxial line.
- the GND line 14 and the power supply lines 16 and 18 are disposed outside the high-frequency signal line 12.
- the DC GND line 14 and the power supply lines 16 and 18 are in no particular order.
- the insulators 15, 17, and 19 have a high dielectric constant so that high-frequency signals do not overlap the DC GND line 14 and the power supply lines 16 and 18.
- the relative dielectric constant of the insulator 13 needs to be 3.7.
- SiO 2 having a relative dielectric constant of 3.9, alumina having a relative dielectric constant of 3.8, or the like is used as the insulator 13 .
- the values of d, D, and ⁇ and the selection of the material of the insulator 13 are design matters and do not limit the scope of the present invention.
- each lead 10 is a coaxial line in which a plurality of layers are concentrically overlapped.
- the high frequency signal line 12 is disposed at the center of the coaxial line, and the GND line 14 is disposed outside the high frequency signal line 12. Thereby, since the high frequency signal line 12 is shielded by the GND line 14, the high frequency signal can be supplied to the plurality of modulators 7 with a small crosstalk.
- the insulators 13, 15, and 17 that insulate the high-frequency signal line 12, the GND line 14, and the power supply lines 16 and 18 from each other are plastic materials such as polyethylene. Thereby, each lead 10 is easy to handle such as bending.
- the insulator 19 of the part joined with the stem main body 1 of a coaxial line is insulating glass. Thereby, a problem does not arise in the airtightness when CAN is connected to the stem body 1.
- a conductor other than the high-frequency signal line 12 of the coaxial line may be a spirally wound metal plate having a width of 1 mm or less. This increases the flexibility of the coaxial lead and facilitates handling such as bending.
- FIG. FIG. 5 is a side view showing a semiconductor package according to Embodiment 2 of the present invention.
- FIG. 6 is a top view showing a semiconductor package according to the second embodiment of the present invention.
- FIG. 7 is a cross-sectional view showing a lead according to Embodiment 2 of the present invention.
- FIG. 8 is a longitudinal sectional view showing a lead according to Embodiment 2 of the present invention.
- a coaxial line of each lead 10 As a coaxial line of each lead 10, a high-frequency signal line 12, an insulator 13, a power supply line 16, an insulator 17, a power supply line 18, an insulator 15, and a GND line 14 are sequentially arranged from the center toward the outside. .
- Other configurations are the same as those of the first embodiment, and the same effects as those of the first embodiment can be obtained.
- the DC power supply lines 16 and 18 are in no particular order.
- the GND line 14 is disposed on the outermost periphery of the coaxial line. Since the stem body 1 is also GND, it is not necessary to interpose an insulating film between the lead 10 and the stem body 1, and the airtightness of the CAN package is improved.
- the four-wavelength EML elements are integrated in the first and second embodiments, it is sufficient that two or more EML elements are integrated, and the same effects as in the first and second embodiments are obtained regardless of the number of elements to be integrated. Is obtained.
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Abstract
ステム(1)に、複数の半導体レーザ(6)と、複数の半導体レーザ(6)の出力光をそれぞれ変調する複数の変調器(7)とを有する多波長集積素子(5)が実装されている。複数のリード(10)がステム(1)を貫通し、複数の半導体レーザ(6)及び複数の変調器(7)にそれぞれ接続されている。各リード(10)は、複数層が同心円状に重なった同軸線路である。同軸線路は、変調器(7)に高周波信号を伝送する高周波信号ライン(12)と、GNDライン(14)と、半導体レーザ(6)に直流電流を給電する給電ライン(16)とを有する。高周波信号ライン(12)は同軸線路の中央に配置されている。GNDライン(14)及び給電ライン(16)は高周波信号ライン(12)の外側に配置されている。
Description
本発明は、半導体パッケージに関する。
モノリシック集積化半導体素子では、n型InP基板上に、波長の互いに異なる4つの分布帰還型半導体レーザと4つの電界吸収型光変調器が集積されている。各変調器からの光出力は曲がり導波路を経てMMI(Multi Mode Interferometer)合波器により合波され、単一導波路の端面から出力される。レーザの背後には、導波路型のモニタPDが集積されている。
このように複数の機能素子を集積することで、既存のシングルチャネルの素子を4個配列した構造よりも小型化できる。また、光合波器などの光学部品の数を削減できる。このため、製造工程における光軸調整が簡易になり、安価に製品を提供できる。
従来の多波長集積EML(Electro-absorption Modulated Laser diode)は、箱型のパッケージに搭載されており、シングルチャネルのEMLパッケージと比較し大型である(例えば、非特許文献1参照)。このため、多波長のEMLを集積したモノリシック形素子の小型化の利点を得られないという問題があった。一方で、シングルチャネル用のEMLでは、箱形から、サイズの小さいCANパッケージへの移行が進んでいる(例えば、特許文献1)。
NTT技術ジャーナル 2012-10 p53
多波長EML素子をCANパッケージに実装する場合、複数のEMLに高周波信号をクロストークが小さい状態で供給するには、各変調器に対して単一のリードピンを使用することができなかった。DC電圧/電流を複数のEMLに供給するためには、現状のLD電流源、モニタPDへの電圧源、ペルチェ素子への電流源のリード線3本に加えて、集積数分のLD電流源、モニタPDへの電圧源用リードピンが必要であった。従って、CANパッケージがリードピン数の増加により肥大化するため、小型化が困難であるという問題があった。
本発明は、上述のような課題を解決するためになされたもので、その目的は複数の変調器に高周波信号をクロストークが小さい状態で供給することができ、リードピン数の増加を抑制することができる半導体パッケージを得るものである。
本発明に係る半導体パッケージは、ステムと、前記ステムに実装され、複数の半導体レーザと、前記複数の半導体レーザの出力光をそれぞれ変調する複数の変調器とを有する多波長集積素子と、前記ステムを貫通し、前記複数の半導体レーザ及び前記複数の変調器にそれぞれ接続された複数のリードとを備え、各リードは、複数層が同心円状に重なった同軸線路であり、前記同軸線路は、前記変調器に高周波信号を伝送する高周波信号ラインと、GNDラインと、前記半導体レーザに直流電流を給電する給電ラインとを有し、前記高周波信号ラインは前記同軸線路の中央に配置され、前記GNDライン及び前記給電ラインは前記高周波信号ラインの外側に配置されていることを特徴とする。
本発明では、各リードは複数層が同心円状に重なった同軸線路である。これにより、信号ライン、GNDライン、給電ラインごとに別個のリードピンを設ける必要が無いため、リードピン数の増加を抑制することができる。また、高周波信号ラインは同軸線路の中央に配置され、GNDラインは高周波信号ラインの外側に配置されている。これにより、高周波信号ラインはGNDラインによりシールドされるため、複数の変調器に高周波信号をクロストークが小さい状態で供給することができる。
本発明の実施の形態に係る半導体パッケージについて図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。
実施の形態1.
図1は、本発明の実施の形態1に係る半導体パッケージを示す側面図である。図2は、本発明の実施の形態1に係る半導体パッケージを示す上面図である。この半導体パッケージは、100Gb/sのCWDM伝送用光源などに使用される多波長集積EMLを実装したTO-CANパッケージである。
図1は、本発明の実施の形態1に係る半導体パッケージを示す側面図である。図2は、本発明の実施の形態1に係る半導体パッケージを示す上面図である。この半導体パッケージは、100Gb/sのCWDM伝送用光源などに使用される多波長集積EMLを実装したTO-CANパッケージである。
円形平板のステム本体1の上にペルチェ素子2が設けられている。ペルチェ素子2の上にサブマウント搭載部3が設けられている。サブマウント搭載部3にサブマウント4が搭載されている。
サブマウント4に多波長集積素子5が実装されている。ペルチェ素子2は多波長集積素子5の温度を制御する。多波長集積素子5は、4つの半導体レーザ6と、4つの半導体レーザ6の出力光をそれぞれ変調する4つの変調器7と、4つの変調器7の出力光を合波する合波器8と、4つの半導体レーザ6をそれぞれモニタする4つのモニタフォトダイオード9とを有する。4つのリード10がステム本体1を貫通し、4つの半導体レーザ6、変調器7及びモニタフォトダイオード9にそれぞれワイヤ接続されている。変調器7に終端抵抗11が接続されている。
図3は、本発明の実施の形態1に係るリードを示す横断面図である。図4は、本発明の実施の形態1に係るリードを示す縦断面図である。各リード10は、複数層が同心円状に重なった同軸線路である。同軸線路として、中央から外側に向かって、高周波信号ライン12、絶縁体13、GNDライン14、絶縁体15、給電ライン16、絶縁体17、給電ライン18、及び絶縁体19が順に配置されている。
高周波信号ライン12は変調器7に高周波信号を伝送する。給電ライン16は半導体レーザ6に直流電流を給電する。給電ライン18はモニタフォトダイオード9に直流電流を給電する。高周波信号ライン12は同軸線路の中央に配置されている。GNDライン14及び給電ライン16,18は高周波信号ライン12の外側に配置されている。DCのGNDライン14及び給電ライン16,18は順不同である。
同軸線路のインピーダンスを所望の値にするためには、絶縁体13の誘電率を適切に選択する必要があるが、絶縁体15,17,19の誘電率に制約は無い。ただし、高周波信号がDCのGNDライン14及び給電ライン16,18に重畳しないようにするためには、絶縁体15,17,19は高誘電率であることが好ましい。
例えば高周波信号ライン12のインピーダンスが50Ωになるように、高周波信号ライン12の直径d、絶縁体13の外周径D、比誘電率εの値を設計する必要が有る。同軸線路のインピーダンスZは近似的にZ=138/√ε*log10(D/d)で表される。例えばdを100μm、Dを500μmとすると、絶縁体13の比誘電率は3.7である必要がある。この場合、絶縁体13として、比誘電率3.9のSiO2、比誘電率3.8のアルミナなどを用いる。なお、d、D、εの値及び絶縁体13の材料の選定は設計事項であり、本発明の範囲を限定するものではない。
以上説明したように、本実施の形態では、各リード10は複数層が同心円状に重なった同軸線路である。これにより、信号ライン、GNDライン、給電ラインごとに別個のリードピンを設ける必要が無いため、リードピン数の増加を抑制することができる。また、高周波信号ライン12は同軸線路の中央に配置され、GNDライン14は高周波信号ライン12の外側に配置されている。これにより、高周波信号ライン12はGNDライン14によりシールドされるため、複数の変調器7に高周波信号をクロストークが小さい状態で供給することができる。
また、高周波信号ライン12とGNDライン14と給電ライン16,18を互いに絶縁する絶縁体13,15,17は、ポリエチレンなどの可塑性材料である。これにより、各リード10は曲げるなどの取扱いが容易である。また、同軸線路のステム本体1と接合される部分の絶縁体19は絶縁ガラスである。これにより、ステム本体1にCANを接続した場合の気密性に問題は生じない。
また、同軸線路の高周波信号ライン12以外の導体を、幅1mm以下の金属板をらせん状に巻きつけたものとしてもよい。これにより、同軸リードの柔軟性が増し、曲げるなどの取扱いが容易となる。
実施の形態2.
図5は、本発明の実施の形態2に係る半導体パッケージを示す側面図である。図6は、本発明の実施の形態2に係る半導体パッケージを示す上面図である。図7は、本発明の実施の形態2に係るリードを示す横断面図である。図8は、本発明の実施の形態2に係るリードを示す縦断面図である。
図5は、本発明の実施の形態2に係る半導体パッケージを示す側面図である。図6は、本発明の実施の形態2に係る半導体パッケージを示す上面図である。図7は、本発明の実施の形態2に係るリードを示す横断面図である。図8は、本発明の実施の形態2に係るリードを示す縦断面図である。
各リード10の同軸線路として、中央から外側に向かって、高周波信号ライン12、絶縁体13、給電ライン16、絶縁体17、給電ライン18、絶縁体15、及びGNDライン14が順に配置されている。その他の構成は実施の形態1と同様であり、実施の形態1と同様の効果が得られる。DCの給電ライン16,18は順不同である。
本実施の形態では、GNDライン14が同軸線路の最外周に配置されている。ステム本体1もGNDであるため、リード10とステム本体1の間に絶縁膜を介在させる必要が無くなり、CANパッケージの気密性が向上する。
なお、実施の形態1、2では4波長のEML素子を集積したが、2個以上のEML素子を集積すればよく、集積される素子数に依らず、実施の形態1、2と同等の効果が得られる。
1 ステム、5 多波長集積素子、6 半導体レーザ、7 変調器、9 モニタフォトダイオード、10 リード、12 高周波信号ライン、13,15,17,19 絶縁体、14 GNDライン、16,18 給電ライン
Claims (5)
- ステムと、
前記ステムに実装され、複数の半導体レーザと、前記複数の半導体レーザの出力光をそれぞれ変調する複数の変調器とを有する多波長集積素子と、
前記ステムを貫通し、前記複数の半導体レーザ及び前記複数の変調器にそれぞれ接続された複数のリードとを備え、
各リードは、複数層が同心円状に重なった同軸線路であり、
前記同軸線路は、前記変調器に高周波信号を伝送する高周波信号ラインと、GNDラインと、前記半導体レーザに直流電流を給電する給電ラインとを有し、
前記高周波信号ラインは前記同軸線路の中央に配置され、
前記GNDライン及び前記給電ラインは前記高周波信号ラインの外側に配置されていることを特徴とする半導体パッケージ。 - 前記同軸線路は、前記高周波信号ラインと前記GNDラインと前記給電ラインを互いに絶縁する可塑性材料と、前記ステムと接合される絶縁ガラスとを更に有することを特徴とする請求項1に記載の半導体パッケージ。
- 前記GNDラインは、前記同軸線路の最外周に配置されていることを特徴とする請求項1に記載の半導体パッケージ。
- 前記半導体レーザをモニタするモニタフォトダイオードを更に備え、
前記同軸線路は、前記高周波信号ラインの外側に配置され前記モニタフォトダイオードに直流電流を給電する給電ラインを更に有することを特徴とする請求項1~3の何れか1項に記載の半導体パッケージ。 - 前記同軸線路の前記高周波信号ライン以外の導体は、金属板をらせん状に巻きつけたものであることを特徴とする請求項1~4の何れか1項に記載の半導体パッケージ。
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- 2017-05-17 US US16/474,753 patent/US10903619B2/en active Active
- 2017-05-17 CN CN201780090706.3A patent/CN110612645B/zh not_active Expired - Fee Related
- 2017-05-17 JP JP2019518676A patent/JP6708306B2/ja not_active Expired - Fee Related
- 2017-05-17 WO PCT/JP2017/018567 patent/WO2018211635A1/ja active Application Filing
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WO2021111534A1 (ja) * | 2019-12-04 | 2021-06-10 | 三菱電機株式会社 | 光送信モジュール |
JPWO2021111534A1 (ja) * | 2019-12-04 | 2021-06-10 | ||
JP7292416B2 (ja) | 2019-12-04 | 2023-06-16 | 三菱電機株式会社 | 光送信モジュール |
Also Published As
Publication number | Publication date |
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CN110612645A (zh) | 2019-12-24 |
JP6708306B2 (ja) | 2020-06-10 |
US10903619B2 (en) | 2021-01-26 |
US20200220322A1 (en) | 2020-07-09 |
CN110612645B (zh) | 2021-04-02 |
JPWO2018211635A1 (ja) | 2019-12-12 |
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