WO2018179038A1 - Semiconductor device production method, program and substrate processing device - Google Patents
Semiconductor device production method, program and substrate processing device Download PDFInfo
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- WO2018179038A1 WO2018179038A1 PCT/JP2017/012314 JP2017012314W WO2018179038A1 WO 2018179038 A1 WO2018179038 A1 WO 2018179038A1 JP 2017012314 W JP2017012314 W JP 2017012314W WO 2018179038 A1 WO2018179038 A1 WO 2018179038A1
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- 238000012545 processing Methods 0.000 title claims abstract description 153
- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 259
- 239000001257 hydrogen Substances 0.000 claims abstract description 73
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 73
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 61
- 239000001301 oxygen Substances 0.000 claims abstract description 61
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 61
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000009826 distribution Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims description 44
- 230000007423 decrease Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 230000004048 modification Effects 0.000 abstract description 6
- 238000012986 modification Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 39
- 230000003647 oxidation Effects 0.000 description 32
- 238000007254 oxidation reaction Methods 0.000 description 32
- 230000001965 increasing effect Effects 0.000 description 17
- 230000007246 mechanism Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002407 reforming Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- -1 oxygen ion Chemical class 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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Definitions
- the present invention relates to a semiconductor device manufacturing method, a program, and a substrate processing apparatus.
- a step of performing a predetermined process such as an oxidation process or a nitridation process on the substrate may be performed as a process of the manufacturing process.
- Patent Document 1 discloses a substrate processing chamber having a substrate processing space communicating with a plasma generation space, an inductive coupling structure arranged outside the plasma generation space, and a silicon-containing layer formed on the surface of the substrate processing space.
- a configuration having a substrate mounting table for mounting a substrate having a groove formed thereon and a gas supply unit having an oxygen gas supply system for supplying an oxygen-containing gas to the plasma generation space is disclosed.
- a film formed on the inner surface of a concave structure such as a trench structure or a hole structure with a high aspect ratio is modified from the film surface to form a modified layer, in the depth direction of the concave structure
- the thickness of the modified layer is required to have a desired distribution.
- the thickness of the modified layer in the depth direction of the concave structure has a desired distribution. To improve the electrical characteristics of the device.
- a process gas including an oxygen-containing gas and a hydrogen-containing gas is excited to generate an oxygen active species and a hydrogen active species, and the oxygen active species and the hydrogen active species are formed into a concave structure.
- the ratio of the hydrogen active species in the total flow rate of the oxygen active species and the hydrogen active species is greater than a first ratio that maximizes the rate at which the oxide layer is formed at the upper end of the concave structure.
- the film formed on the inner surface of the concave structure having a high aspect ratio is modified so that the thickness of the modified layer in the depth direction of the concave structure has a desired distribution, so that the electrical Techniques for enhancing properties are provided.
- FIG. 5 is a diagram schematically showing hydrogen active species and oxygen active species in a hole 304.
- the ratio of H 2 at a total flow rate of H 2 gas and O 2 gas supplied into the processing chamber is a diagram showing the relationship between the thickness of the oxide layer formed on the upper surface of the planar wafer.
- A) is a figure which shows the board
- (B) is the board
- the total flow rate of the mixed gas of H 2 gas and O 2 gas supplied into the processing chamber is a diagram illustrating a thickness relationship between the oxide layer formed on the planar wafer surface.
- FIG. 6 is a diagram schematically showing the relationship between the gas flow velocity at the upper end of the hole 304 and the gas flow velocity in the hole 304.
- (A) is a figure which shows an example of the hole pattern of the aspect-ratio 20
- (B) is a figure which shows the thickness of the oxide layer of the hole inner surface which concerns on a comparative example.
- (C) is a figure which shows the thickness of the oxide layer of the hole inner surface which concerns on a present Example.
- (A) is a diagram showing an example of a hole pattern with an aspect ratio of 20, and (B) shows the flow rate of the mixed gas of H 2 gas and O 2 gas supplied to the processing chamber at 1.0 slm and 0.6 slm. , 2.0 slm is a diagram showing the thickness of the oxide layer on the inner surface of the hole when the oxide layer is formed.
- the processing apparatus 100 includes a processing furnace 202 that performs plasma processing on the wafer 200.
- the processing furnace 202 includes a processing container 203 that constitutes a processing chamber 201.
- the processing container 203 includes a dome-shaped upper container 210 that is a first container and a bowl-shaped lower container 211 that is a second container.
- the processing chamber 201 is formed by covering the upper container 210 on the lower container 211.
- a gate valve 244 is provided on the lower side wall of the lower container 211.
- the gate valve 244 When the gate valve 244 is open, the wafer 200 can be loaded into the processing chamber 201 via the loading / unloading port 245. Alternatively, the wafer 200 can be carried out of the processing chamber 201 via the loading / unloading port 245.
- the gate valve 244 When the gate valve 244 is closed, the gate valve 244 serves as a gate valve that maintains airtightness in the processing chamber 201.
- the processing chamber 201 has a plasma generation space 201a around which a coil 212 is provided as will be described later, and a substrate processing space 201b that communicates with the plasma generation space 201a and in which the wafer 200 is processed.
- the plasma generation space 201a is a space where plasma is generated, and refers to a space above the lower end of the coil 212 (one-dot chain line in FIG. 1) in the processing chamber, for example.
- the substrate processing space 201b is a space where the substrate is processed with plasma, and is a space below the lower end of the coil 212.
- a susceptor 217 is disposed as a substrate placement portion on which the wafer 200 is placed.
- a heater 217b as a heating mechanism is integrally embedded.
- the heater 217b is configured to be able to heat the surface of the wafer 200 from, for example, about 25 ° C. to about 1000 ° C. when electric power is supplied through the heater power adjustment mechanism 276.
- the susceptor 217 is electrically insulated from the lower container 211.
- An impedance adjustment electrode 217c is provided inside the susceptor 217.
- the impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275 as an impedance adjustment unit.
- the variable impedance mechanism 275 includes a coil and a variable capacitor. By controlling the inductance and resistance of the coil and the capacitance value of the variable capacitor, the impedance is changed within a range from about 0 ⁇ to the parasitic impedance value of the processing chamber 201. It is configured to be able to. Accordingly, the potential (bias voltage) of the wafer 200 can be controlled via the impedance adjustment electrode 217c and the susceptor 217.
- the susceptor 217 is provided with a susceptor elevating mechanism 268 that elevates and lowers the susceptor.
- the susceptor 217 is provided with through holes 217 a, while the bottom surface of the lower container 211 is provided with at least three wafer push-up pins 266 at positions facing the through holes 217 a. When the susceptor 217 is lowered, the wafer push-up pins 266 penetrate the through holes 217a.
- the susceptor 217, the heater 217b, and the impedance adjustment electrode 217c constitute the substrate mounting portion according to the present embodiment.
- a gas supply head 236 is provided above the processing chamber 201, that is, above the upper container 210.
- the gas supply head 236 includes a cap-shaped lid 233, a gas introduction port 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239, and the reaction gas is introduced into the processing chamber 201. It is configured so that it can be supplied.
- the buffer chamber 237 has a function as a dispersion space for dispersing the reaction gas introduced from the gas introduction port 234.
- the gas inlet 234 has a downstream end of a gas supply pipe 232a for supplying hydrogen (H 2 ) gas as a hydrogen-containing gas and a downstream of a gas supply pipe 232b for supplying oxygen (O 2 ) gas as an oxygen-containing gas.
- the end and a gas supply pipe 232c that supplies nitrogen (N 2 ) gas as an inert gas or a nitrogen-containing gas are connected so as to merge.
- the gas supply pipe 232a is provided with an H 2 gas supply source 250a, a mass flow controller (MFC) 252a as a flow rate control device, and a valve 253a as an on-off valve in order from the upstream side.
- MFC mass flow controller
- the gas supply pipe 232b is provided with an O 2 gas supply source 250b, an MFC 252b, and a valve 253b in this order from the upstream side.
- the gas supply pipe 232c is provided with an N 2 gas supply source 250c, an MFC 252c, and a valve 253c in order from the upstream side.
- a valve 243a is provided on the downstream side where the gas supply pipe 232a, the gas supply pipe 232b, and the gas supply pipe 232c merge, and is connected to the upstream end of the gas inlet 234.
- valves 253a, 253b, 253c, and 243a By opening and closing the valves 253a, 253b, 253c, and 243a, the flow rates of the respective gases are adjusted by the MFCs 252a, 252b, and 252c, and the hydrogen-containing gas, the oxygen-containing gas, A processing gas such as a nitrogen-containing gas can be supplied into the processing chamber 201.
- the hydrogen supply head 236 (the lid 233, the gas inlet 234, the buffer chamber 237, the opening 238, the shielding plate 240, the gas outlet 239), the gas supply pipe 232a, the MFC 252a, and the valves 253a and 243a are used to provide hydrogen according to the present embodiment.
- a contained gas supply system is configured.
- the gas supply head 236, the gas supply pipe 232b, the MFC 252b, and the valves 253b and 243a constitute the oxygen-containing gas supply system according to this embodiment.
- the nitrogen-containing gas supply system is configured by the gas supply head 236, the gas supply pipe 232c, the MFC 252c, and the valves 253c and 243a.
- a gas supply unit is configured by a hydrogen-containing gas supply system, an oxygen-containing gas supply system, and a nitrogen-containing gas supply system.
- a gas exhaust port 235 for exhausting the reaction gas from the processing chamber 201 is provided on the side wall of the lower container 211.
- the upstream end of the gas exhaust pipe 231 is connected to the gas exhaust port 235.
- the gas exhaust pipe 231 is provided with an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure adjusting unit), a valve 243b, and a vacuum pump 246 as a vacuum exhaust device in order from the upstream side.
- APC Auto Pressure Controller
- the gas exhaust port 235, the gas exhaust pipe 231, the APC valve 242, and the valve 243b constitute the exhaust unit according to the present embodiment.
- a spiral resonance coil 212 is provided on the outer periphery of the processing chamber 201, that is, outside the side wall of the upper container 210 so as to surround the processing chamber 201.
- An RF sensor 272, a high frequency power supply 273 and a frequency matching unit 274 are connected to the resonance coil 212.
- the high frequency power supply 273 supplies high frequency power to the resonance coil 212.
- the RF sensor 272 is provided on the output side of the high frequency power supply 273.
- the RF sensor 272 monitors information on high-frequency traveling waves and reflected waves that are supplied.
- the frequency matching unit (frequency control unit) 274 controls the high frequency power supply 273 so as to minimize the reflected wave based on the information of the reflected wave monitored by the RF sensor 272, and performs frequency matching.
- Both ends of the resonance coil 212 are electrically grounded, but at least one end of the resonance coil 212 finely adjusts the electrical length of the resonance coil during initial installation of the apparatus or when processing conditions are changed, In order to make the resonance characteristic substantially equal to that of the high-frequency power source 273, it is grounded via the movable tap 213.
- Reference numeral 214 in FIG. 1 indicates the other fixed ground.
- a power feeding unit is configured by a movable tap 215 between the grounded ends of the resonance coil 212. ing.
- the shielding plate 223 shields the leakage of electromagnetic waves to the outside of the resonance coil 212 and forms a capacitance component necessary for constituting a resonance circuit between the resonance coil 212 and the resonance coil 212.
- the resonance coil 212, the RF sensor 272, and the frequency matching unit 274 constitute the plasma generation unit according to the present embodiment.
- the resonance coil 212 forms a standing wave of a predetermined wavelength, the winding diameter, the winding pitch, and the number of turns are set so as to resonate in all wavelength modes. That is, the electrical length of the resonance coil 212 is set to an integral multiple of one wavelength at a predetermined frequency of the power supplied from the high frequency power supply 273.
- the resonance coil 212 has a frequency of 800 kHz to 50 MHz, a power of 0.5 to 5 kW, and more preferably 1.
- the plasma generating space has an effective cross-sectional area of 50 to 300 mm 2 and a coil diameter of 200 to 500 mm so that a magnetic field of about 0.01 to 10 gauss can be generated by a high frequency power of 0 to 4.0 kW. It is wound about 2 to 60 times on the outer peripheral side of the room forming 201a.
- the high frequency power supply 273 includes a power supply control means including a high frequency oscillation circuit and a preamplifier for defining an oscillation frequency and an output, and an amplifier for amplifying to a predetermined output.
- the power control means controls the amplifier based on output conditions relating to the frequency and power set in advance through the operation panel, and the amplifier supplies constant high frequency power to the resonance coil 212 via the transmission line.
- the frequency matching unit 274 detects the reflected wave power from the resonance coil 212 when plasma is generated, and the preset frequency is set so that the reflected wave power is minimized. Increase or decrease the oscillation frequency.
- the frequency matching unit 274 includes a frequency control circuit that corrects a preset oscillation frequency, and detects the reflected wave power in the transmission line on the output side of the amplifier of the high frequency power supply 273, An RF sensor 272 that feeds back a voltage signal to the frequency control circuit is interposed.
- the frequency control circuit oscillates at the no-load resonance frequency of the resonance coil 212 before plasma lighting, and oscillates at a frequency obtained by increasing or decreasing the preset frequency so that the reflected power is minimized after plasma lighting. As a result, a frequency signal is given to the high frequency power supply 273 so that the reflected wave in the transmission line becomes zero.
- the resonance coil 212 is more accurate.
- the controller 221 as a control unit is configured as a computer including a CPU (Central Processing Unit) 221a, a RAM (Random Access Memory) 221b, a storage device 221c, and an I / O port 221d.
- the RAM 221b, the storage device 221c, and the I / O port 221d are configured to exchange data with the CPU 221a via the internal bus 221e.
- a touch panel, a mouse, a keyboard, an operation terminal, or the like may be connected to the controller 221 as the input / output device 225.
- a display or the like may be connected to the controller 221 as a display unit.
- the storage device 221c includes, for example, a flash memory, an HDD (Hard Disk Drive), a CD-ROM, and the like.
- a control program that controls the operation of the substrate processing apparatus 100, a process recipe that describes the procedure and conditions of the substrate processing, and the like are stored in a readable manner.
- the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 221 to execute each procedure in a substrate processing step to be described later, and functions as a program.
- the RAM 221b is configured as a memory area (work area) in which a program or data read by the CPU 221a is temporarily stored.
- the I / O port 221d includes the above-described MFCs 252a to 252c, valves 253a to 253c, 243a and 243b, gate valve 244, APC valve 242, vacuum pump 246, heater 217b, RF sensor 272, high frequency power supply 273, frequency matching unit 274, The susceptor elevating mechanism 268 and the impedance variable mechanism 275 are connected.
- the CPU 221a is configured to read and execute a control program from the storage device 221c, and to read a process recipe from the storage device 221c in response to an operation command input from the input / output device 225 or the like. As shown in FIG. 1, the CPU 221a adjusts the opening degree of the APC valve 242, the opening / closing operation of the valve 243b, and the vacuum through the I / O port 221d and the signal line A in accordance with the contents of the read process recipe.
- the pump 246 is started and stopped, the lifting / lowering operation of the susceptor lifting / lowering mechanism 268 through the signal line B, the power supply amount adjusting operation (temperature adjusting operation) to the heater 217b based on the temperature sensor by the heater power adjusting mechanism 276 through the signal line C, The impedance value adjusting operation by the impedance variable mechanism 275, the opening / closing operation of the gate valve 244 through the signal line D, the operation of the RF sensor 272, the frequency matching unit 274 and the high frequency power supply 273 through the signal line E, and the MFCs 252a to 252c through the signal line F. Adjusting the flow rate of various gases by the valve and valve 2 It is configured to control the opening / closing operations of 53a to 253c and 243a, respectively.
- FIG. 4A shows a substrate having a trench structure processed in the substrate processing step according to this embodiment
- FIG. 4B shows a hole (hole) processed in the substrate processing step according to this embodiment.
- FIG. 5 is a diagram illustrating an example of the configuration of the substrate illustrated in FIG. 4, and illustrates an example of a cross section along the depth direction of the trench structure or the hole structure.
- the substrate processing process according to this embodiment is performed by the above-described processing apparatus 100 as one process of manufacturing a semiconductor device such as a flash memory. In the following description, the operation of each part constituting the processing apparatus 100 is controlled by the controller 221.
- a pattern having a three-dimensional structure as shown in FIG. 5 is formed on a substrate having a concave structure such as a trench structure or a hole structure processed in the substrate processing step according to the present embodiment.
- the structure is, for example, a hole-shaped 3D-NAND structure having an aspect ratio (that is, a ratio of depth to hole diameter) of 20 or more, and is formed by the following procedure.
- the aspect ratio is not limited to that in the hole structure, but may include, for example, the ratio of the depth to the trench width in the trench structure.
- titanium nitride films 302 and silicon oxide films 300a as metal-containing films are alternately and continuously stacked on a wafer 200 made of single crystal silicon (c-Si) or the like. Then, etching is performed from the top to the bottom of the laminated film in a hole shape (see FIG. 6A).
- a silicon oxide film 300b is formed on the inner surface of the hole 304 (see FIG. 6B).
- a silicon nitride film 306 is formed on the inner surface of the silicon oxide film 300b (see FIG. 6C).
- a silicon oxide film 300c is formed on the inner surface of the silicon nitride film 306 (see FIG. 6D).
- a polysilicon film 308 is formed on the inner surface of the silicon oxide film 300c (see FIG. 6E).
- a silicon oxide film 300d is filled inside the polysilicon film 308 to form a hole-like 3D-NAND structure (see FIG. 6F), and this polysilicon film 308 is used as a channel portion.
- the exposed surface of the silicon oxide film 300a at the bottom of the hole 304 can be damaged, resulting in a damaged layer.
- the damage of the silicon oxide film mainly means that the oxygen component escapes from the film and does not have a desired composition.
- the damaged silicon oxide film has a reduced function as an insulating film. Since the etching is performed by drawing ions with a bias, the degree of damage increases toward the bottom of the hole, and the damage at the bottom is most noticeable.
- the silicon oxide film which is an insulating film
- the electrical characteristics such as the withstand voltage characteristics change, so if there is significant damage to the silicon oxide film at the bottom, the silicon oxide film in other parts As a result, variations in withstand voltage characteristics occur.
- an oxidation process is performed to repair damage, for example, the silicon oxide film in other parts that are not damaged (or less) is excessively oxidized, or oxidation of a metal-containing film such as a metal gate is also advanced. There are times when it falls. Accordingly, it is desirable to locally (selectively) oxidize only the vicinity of the bottom of the hole 304 in order to repair the damaged silicon oxide film.
- the film thickness of the silicon oxide film 300c is increased above the hole 304 due to the microloading effect.
- the film thickness of the silicon oxide film 300c may become thinner as it approaches the bottom of the hole. That is, the thickness of the silicon oxide film may be nonuniform between the upper and lower portions of the hole 304. If the film thickness of the silicon oxide film 300c is not uniform between the upper part and the lower part of the hole 304, variations in electrical characteristics such as withstand voltage characteristics occur.
- the inner surface of the hole 304 is oxidized.
- the silicon nitride film 306 which is the base film of the silicon oxide film 300c is subjected to an oxidation process such that the closer to the bottom of the hole 304, the greater the thickness of the oxide layer formed by the oxidation process.
- the thickness of the silicon oxide film 300c including the oxide layer formed in (1) can be corrected so as to be nearly uniform.
- a silicon oxide film which is a film formed on the inner surface of a concave structure such as a hole structure having a high aspect ratio of 20 or more or a trench structure, or the like is provided.
- the silicon nitride film as the base film is modified (oxidized) from the film surface exposed in the internal space of the hole 304, and the oxide layer is formed so that the thickness of the oxidized layer by the modification process increases toward the bottom surface of the hole 304. Form.
- damage to the silicon oxide film at the bottom of the hole 304 can be repaired, and variations in the oxide film thickness formed on the inner surface of the hole 304 can be corrected.
- the aspect ratio of the hole 304 is 20.
- the wafer 200 on which the hole 304 to be repaired is formed is carried into the processing chamber 201.
- the susceptor elevating mechanism 268 lowers the susceptor 217 and causes the wafer push-up pins 266 to protrude from the through hole 217a of the susceptor 217 by a predetermined height from the surface of the susceptor 217.
- the gate valve 244 is opened, and the wafer 200 is loaded into the processing chamber 201.
- the wafer 200 is supported in a horizontal posture on the wafer push-up pins 266 protruding from the surface of the susceptor 217.
- the susceptor elevating mechanism 268 raises the susceptor 217 so as to be at a predetermined position between the lower end 203a of the resonance coil 212 and the upper end 245a of the loading / unloading port 245.
- the wafer 200 is supported on the upper surface of the susceptor 217.
- the heater 217b is preheated, and the wafer 200 loaded thereon is held on the susceptor 217 in which the heater 217b is embedded, so that the temperature is within a range of 100 to 1000 ° C., for example, 700 ° C.
- the wafer 200 is heated.
- the inside of the processing chamber 201 is evacuated by the vacuum pump 246 through the gas exhaust pipe 231 so that the pressure in the processing chamber 201 is 0.5 Pa or more and 250 Pa or less, more preferably 10 Pa or more.
- the predetermined value is within a range of 200 Pa or less.
- the vacuum pump 246 is operated until at least a substrate unloading step S150 described later is completed.
- a gas containing hydrogen atoms and oxygen atoms is supplied into the processing chamber 201 as a processing gas, and plasma processing is performed on the inner surface of the hole 304 by plasma-exciting the gas.
- a mixed gas of H 2 gas that is hydrogen-containing gas and O 2 gas that is oxygen-containing gas is supplied.
- valves 243a, 253a, and 253b are opened, and H 2 gas is supplied into the processing chamber 201 through the buffer chamber 237 while controlling the flow rate with the MFC 252a.
- O 2 gas is supplied into the processing chamber 201 through the buffer chamber 237 while controlling the flow rate with the MFC 252b.
- the reforming process is performed by increasing the ratio of H 2 gas in the mixed gas supplied into the processing chamber 201 to 10 to 50%, the upper end portion of the hole 304 in the inner space of the hole 304
- the ratio of the active hydrogen species generated from the mixed gas decreases as the distance from (that is, the hole opening) toward the bottom surface in the hole 304 decreases.
- a desired distribution of an oxidation rate which is a rate at which an oxide layer is formed on the surface of the film to be modified, in a direction (depth direction) from the upper end portion of the hole toward the bottom surface.
- the ratio of hydrogen active species and oxygen active species supplied to the surface of the wafer 200 is controlled.
- the thickness distribution of the oxide layer by the reforming process is controlled to be a desired distribution in the hole depth direction.
- the flow ratio of the mixed gas or the ratio of hydrogen active species to oxygen active species
- the oxidation rate or the thickness of the oxide layer
- the ratio of the supply amount of active hydrogen species and active oxygen species (flow rate of active species) at the bottom of the hole is particularly around 5:95 (that is, the ratio of active hydrogen species in the total supply amount is around 5%).
- the oxidation rate at the bottom of the hole is maximized.
- the amount of H 2 gas introduced into the processing chamber 201 is 200 sccm
- the amount of O 2 gas introduced is 800 sccm.
- the opening of the APC valve 242 is adjusted so that the pressure in the processing chamber 201 becomes a predetermined pressure of, for example, 150 Pa, and the processing chamber 201 is exhausted.
- H 2 gas and O 2 gas are activated and dissociated by the excited plasma, and oxygen active species (O radicals) and hydrogen active species (H radicals) are generated.
- oxygen active species O radicals
- hydrogen active species H radicals
- a hydroxyl radical, an oxygen ion, or the like may be generated as a reactive species containing oxygen.
- hydrogen ions or the like may be generated as reactive species containing hydrogen.
- the silicon oxide film 300a and the like formed on the inner surface of the hole 304 is modified and oxidized from the surface to form an oxide layer 400a. .
- the thickness increases toward the bottom surface of the hole 304 as shown in FIG.
- the oxide layer 400a can be formed to have a large thickness. That is, the damaged silicon oxide film 300a at the bottom can be modified to form an oxide layer 400a as a repaired silicon oxide film. The reason will be described later.
- the configuration using a mixed gas of H 2 gas, which is a hydrogen-containing gas, and O 2 gas, which is an oxygen-containing gas has been described as the gas containing hydrogen atoms and oxygen atoms.
- a mixed gas of a hydrogen-containing gas other than H 2 gas and an oxygen-containing gas other than O 2 gas can be used.
- O 3 (ozone) gas may be used as the oxygen-containing gas.
- a gas containing deuterium D may be used as the hydrogen-containing gas.
- the ratio of H radicals and O radicals supplied into the holes is adjusted in order to form the oxide layer so that the thickness increases relatively toward the bottom surface of the holes 304.
- the ratio of H radicals to O radicals on the bottom surface of the hole is adjusted to 5:95 in order to maximize the formation rate (oxidation rate) of the oxide layer on the bottom surface of the hole. .
- the reason why this ratio is set to 5:95 will be described below.
- FIG. 10 is a diagram schematically showing H radicals and O radicals in the hole 304.
- FIG. 11 is supplied into the processing chamber 201 when the same oxidation treatment as in this embodiment is performed on a silicon film formed on a planar wafer having no concave structure or the like formed on the surface.
- the ratio of the flow rate of H 2 gas in the total flow rate of H 2 gas and O 2 gas is a diagram showing the relationship between the thickness of the oxide layer formed on the upper surface of the wafer. That is, FIG. 11, in the reforming target layer which the concave structure is not present, shows the relationship between the thickness of the ratio of the flow rate of H 2 gas in the total flow rate of H 2 gas and O 2 gas, oxidized layer formed thereon ing.
- H radicals are easier to deactivate than O radicals and have a shorter lifetime. Therefore, H radicals tend to be deactivated faster than O radicals when they collide with the wall surface of the hole while entering the bottom surface of the hole 304 from the upper end (opening) of the hole 304. Due to the difference in lifetime between the H radical and the O radical, the ratio of the H radical is lower at the bottom surface of the hole 304 than at the upper end.
- the oxide layer is formed using a mixed gas of H 2 gas and O 2 gas
- the oxidation rate peaks when the ratio of H 2 in the mixed gas is around 5%.
- the ratio of H 2 is increased from 5%
- the oxidation rate tends to decrease.
- the oxidation rate tends to decrease. That is, the oxidation rate becomes the highest when the ratio of H 2 in the mixed gas is around 5%.
- the ratio of H 2 gas and O 2 gas before plasma excitation supplied into the processing chamber 201 is substantially equal to the ratio of H radical and O radical supplied on the wafer surface. Is done. Therefore, it is considered that the oxidation rate becomes the highest when the ratio of H radicals to O radicals supplied to the film to be modified is about 5:95 (that is, the ratio of H radicals is about 5%).
- the oxidation rate with respect to the silicon film formed on the wafer having no concave structure on the surface is maximized as shown in FIG.
- the oxidation rate becomes the highest at the upper end of the hole 304 (the opening of the hole), and the oxidation rate decreases with decreasing the ratio of H radicals toward the bottom of the hole. Becomes smaller.
- the ratio of H radicals to O radicals supplied to the wafer 200 is set to a predetermined ratio larger than the ratio (first ratio) at which the oxidation rate at the upper end portion of the holes 304 is maximized.
- the oxide layer can be formed so that the thickness is larger on the inner surface (that is, the surface on the bottom side than the upper end) than on the upper end.
- the flow rate ratio of the H 2 gas in the mixed gas supplied into the processing chamber 201 is set to a predetermined ratio higher than 5% at which the oxidation rate peaks at the upper end portion of the hole 304.
- the thickness of the oxide layer can be adjusted so that the thickness of the inner surface of the hole 304 is larger than that of the upper end portion.
- the ratio of the H radical to the O radical supplied to the upper surface of the wafer 200 is such that the thickness distribution of the oxide layer (that is, the oxidation rate distribution) in the depth direction toward the bottom surface of the hole 304 is substantially uniform.
- the ratio is set to a predetermined ratio that is larger than the second ratio, the oxide layer can be formed so that the thickness becomes relatively larger toward the bottom surface of the hole 304 than the substantially uniform distribution. it can.
- the flow rate ratio of the H 2 gas in the mixed gas supplied into the processing chamber 201 is set to a predetermined ratio higher than the ratio at which the thickness distribution of the oxide layer becomes substantially uniform. Note that the second ratio is larger than the first ratio.
- the ratio of H radicals to O radicals supplied to the upper surface of the wafer 200 is equal to or larger than a ratio (third ratio) that maximizes the oxidation rate at the bottom surface of the hole 304, and By doing so, the oxide layer can be formed so that the thickness is relatively increased toward the bottom surface of the hole 304 and the thickness at the bottom surface of the hole is maximized in the layer thickness distribution on the inner surface of the hole.
- the ratio of H radicals to O radicals supplied to the upper surface of the wafer 200 as the third ratio, the oxidation rate at the bottom surface of the hole 304 can be maximized.
- the above-mentioned third ratio is such that the ratio of H radicals to O radicals on the bottom surface of the hole 304 is around 5%.
- the third ratio is larger than the first ratio and the second ratio.
- the ratio of the supply amount of H radicals at the bottom surface of the hole 304 having an aspect ratio of 20 to around 5% is set to 10%. It may be ⁇ 30%, for example, around 20%.
- the ratio of the supply amount of H radicals at the upper end of the hole 304 is set to 10 to 30%, so that the flow rate ratio of H 2 gas and O 2 gas introduced into the processing chamber 201 is 10:90. Adjust to ⁇ 30: 70.
- the ratio of H radicals supplied at the upper end of the hole 304 as the substrate has a higher aspect ratio.
- the higher the aspect ratio the higher the probability that the H radical will be deactivated before reaching the bottom of the hole. If the H radical is completely deactivated before reaching the bottom of the hole, the oxidation rate is higher than the peak value. It is because it falls.
- the thickness of the oxide layer 400a formed on the surface of the silicon oxide film 300a at the bottom of the hole is changed to the upper end of the hole. Since the thickness of the oxide layer 400a formed on the surface of the silicon oxide film 300a can be made relatively larger, the silicon oxide film 300a at the bottom of the hole damaged by the etching is selectively repaired, and electrical characteristics (for example, withstand voltage) Characteristics, etc.) can be improved.
- the substrate processing steps in steps S110 to S150 described above are performed.
- a part of the silicon nitride film 306 which is a base film is formed at a portion where the silicon oxide film 300c is thin at the bottom of the hole 304.
- the thickness of the silicon oxide film 300c formed on the bottom of the hole 304 and the thickness of the silicon oxynitride layer 400b formed on the lower layer are set to the thickness of the silicon oxide film 300c on the top of the hole 304. Correct to get closer. Note that it is considered that nitrogen contained in the silicon oxynitride layer 400b gradually escapes and becomes closer to the silicon oxide layer.
- the ratio of H radicals to O radicals supplied to the wafer is made larger than the reference ratio based on the ratio that makes the thickness distribution of the oxide layer uniform in the hole depth direction.
- a distribution in which the thickness of the oxide layer increases toward the bottom surface of the hole can be obtained.
- the ratio of the supply flow rates of the hydrogen-containing gas and the oxygen-containing gas supplied into the processing chamber 201 is adjusted by controlling the opening degree of each of the MFCs 252a and 252b, and supplied into the hall 304.
- the ratio of H radical and O radical to be adjusted is adjusted.
- the ratio of the supply amount of H radicals and O radicals can be adjusted by controlling the susceptor elevating mechanism 268 and changing the distance between the wafer 200 and the resonance coil 212.
- the mixed gas can be plasma-excited outside the processing chamber 201 and the generated reactive species such as active species can be introduced into the processing chamber 201.
- the flow rate ratio of the activated species to be introduced is adjusted. By doing so, the ratio of the active species may be controlled.
- the flow rate of the gas flowing through the upper end of the hole 304 (more generally, the flow rate of the gas flowing through the upper surface of the wafer 200) is controlled, and the reforming process is performed in the high aspect ratio hole 304.
- the thickness of the oxide layer formed in is increased so as to increase toward the bottom of the hole.
- the upper end portion of the hole 304 is controlled by controlling the flow rate of the mixed gas of H 2 gas and O 2 gas supplied into the processing chamber 201 in the processing gas supply and plasma processing step of step S130 described above. To control the flow rate of the gas flowing through.
- the opening of the APC valve 242 is adjusted so that the pressure in the processing chamber 201 is 50 to 200 Pa, for example, a predetermined pressure of 150 Pa, and the processing chamber 201 is exhausted. In this way, while the inside of the processing chamber 201 is appropriately evacuated, the supply of the mixed gas of H 2 gas and O 2 gas is continued until the plasma processing step described later is completed.
- the silicon oxide film 300a formed on the inner surface of the hole 304 is modified from the surface as shown in FIG. 400a is formed.
- a silicon oxynitride layer (SiON layer) 400b is formed by modifying a part of the silicon nitride film 306 as a base film at a thin portion of the silicon oxide film 300c at the bottom of the hole 304. To do.
- FIG. 13 is supplied into the processing chamber 201 when the same oxidation treatment as in this embodiment is performed on a silicon film formed on a planar wafer having no concave structure or the like formed on the surface.
- the total flow rate of the mixed gas of H 2 gas and O 2 gas is a diagram showing the relationship between the thickness of the oxide layer formed on the upper surface of the wafer.
- the pressure in the processing chamber 201 is constant, the flow rate of the supplied mixed gas and the flow velocity of the gas flowing on the upper surface of the wafer are substantially proportional.
- the thickness of the oxide layer formed is small if the flow velocity of the gas flowing on the surface of the film to be modified is high, and is formed if the flow velocity of the gas flowing on the surface of the film to be modified is slow. It can be seen that the thickness of the oxidized layer tends to increase.
- FIGS. 14A and 14B are diagrams schematically showing the relationship between the flow velocity of the gas at the upper end of the hole 304 and the flow velocity of the gas containing H radicals and O radicals in the hole 304.
- FIG. The direction of the arrow shown in FIGS. 14A and 14B indicates the direction in which the gas flows, and the size of the arrow indicates the flow rate of the gas.
- the gas flow rate at the upper end of the hole 304 that is, the flow rate of gas flowing on the surface of the wafer 200
- the bottom surface of the hole 304 is higher than the upper end of the hole 304.
- the flow rate becomes relatively slower toward the.
- the upper end portion of the hole 304 is increased by increasing the flow velocity at the upper end portion of the hole 304 as compared with the case shown in FIG. Compared to the bottom surface, the dwell time of H radicals and O radicals becomes relatively longer as it approaches the bottom surface. Therefore, the closer to the bottom surface from the upper end of the hole, the higher the oxidation rate with respect to the formed film. It is considered that the thickness of the lower oxide layer can be increased. That is, by selecting the flow velocity at the upper end of the hole 304, the thickness distribution of the oxide layer on the inner surface of the hole 304 can be formed to be different in the depth direction.
- the oxide layer can be formed so that the thickness increases toward the bottom surface of the hole 304.
- the flow rate of the gas flowing through the substrate surface is adjusted by adjusting the supply flow rate of the mixed gas supplied into the processing chamber 201 so that the film thickness distribution inside the hole differs in the depth direction. To do. More specifically, the flow rate of the mixed gas is adjusted by controlling the opening degrees of the MFCs 252a and 252b.
- the ratio of the supply flow rates of the hydrogen-containing gas and the oxygen-containing gas is also controlled, so that the film thickness distribution inside the hole can be controlled. You may control.
- the same gas as in the first embodiment can be used.
- plasma excitation may be performed by supplying a molecular gas containing both hydrogen atoms and oxygen atoms.
- H 2 O gas or H 2 O 2 gas may be used.
- the present invention is not limited to this, and as the processing gas, only O 2 gas, only H 2 gas, N
- the present invention can also be applied to the case of using only two gases, only ammonia gas, or a mixed gas of N 2 gas and H 2 gas.
- the configuration in which the total flow rate of the mixed gas supplied into the processing chamber 201 is controlled to control the flow rate of the gas has been described.
- the configuration is not limited thereto, and the height of the susceptor 217 is increased.
- the flow rate of the gas at the upper end of the hole may be controlled by adjusting or changing the shape in the processing chamber 201.
- FIG. 15A is a diagram illustrating an example of a hole pattern.
- FIG. 15B is a diagram showing the thickness of the oxide layer formed on the inner surface of the hole by the modification process according to the comparative example.
- FIG. 15C shows the modification process according to this example. It is a figure which shows the thickness of the oxide layer formed in the hole inner surface by.
- FIG. 15B shows, as a comparative example, a case where plasma processing is performed using a mixed gas of H 2 gas and O 2 gas using the above-described substrate processing step, and H introduced into the processing chamber is shown in FIG. This shows the case where the plasma treatment is performed with the flow rate ratio of 2 gas to O 2 gas set to 5:95.
- FIG. 15C shows a case where plasma processing is performed using the above-described substrate processing step with a flow rate ratio of H 2 gas and O 2 gas introduced into the processing chamber of 20:80.
- plasma processing was performed on a hole-shaped wafer having an aspect ratio of 20 at a wafer temperature of 700 ° C., a pressure in the processing chamber 201 of 150 Pa, and an excitation power of 3.5 kW.
- the ratio of H 2 gas and O 2 gas supplied into the processing chamber 201 is 20:80, the ratio of the supply amount of H radicals and O radicals at the bottom of the hole 304 is about 5:95. Presumed to have approached. Accordingly, it was confirmed that the ratio of H radicals supplied at the upper part and the lower part of the hole 304 can be changed using the fact that H radicals have a shorter lifetime than O radicals.
- FIG. 16A shows an example of a hole pattern with an aspect ratio of 20
- FIG. 16B shows the flow rate of the mixed gas of H 2 gas and O 2 gas supplied into the processing chamber at 1.0 slm, 0
- the O radical is deactivated before reaching the bottom surface, and the thickness of the oxide layer becomes closer to the bottom surface. Became smaller.
- a sufficient amount of radicals can reach the bottom before the O radicals are deactivated, and the oxide layer is uniformly formed in the depth direction of the holes 304. Been formed.
- the film is formed at a flow rate of 2.0 slm, the effect of the flow velocity difference between the top and bottom of the hole increases, and the thickness of the oxide layer increases toward the bottom due to the difference in radical residence time. A layer was formed.
- the oxide layer is directed toward the bottom surface of the hole 304. It was confirmed that the thickness of the film tends to increase. That is, by controlling the flow rate of the mixed gas, the flow rate of the gas flowing through the upper end of the hole is controlled to increase the speed, and a gas flow rate difference is generated in the hole. It was confirmed that the thickness of the oxide layer formed in the lower part can be made larger than that in the upper part.
- the surface of the inner surface of the hole is formed by surface-treating the substrate on which the hole 304 is formed at a predetermined gas flow rate or a predetermined mixing ratio.
- the film thickness distribution can be arbitrarily controlled in the depth direction.
- the oxide layer is formed by modifying the surface of the film so that the film thickness becomes thicker toward the bottom of the hole 304, so that the oxide film at the bottom is easily damaged and the upper portion of the hole 304 due to the microloading effect. It is possible to solve the problem that the film thickness is uneven at the lower portion, and the electrical characteristics of the device can be improved.
- the present invention is applied to the manufacture of a 3D-NAND flash memory or the like in the manufacturing process of a semiconductor device, and is used to treat a surface on which any one of a silicon-containing film and a metal-containing film (or any combination thereof) is exposed. Applied.
- silicon-containing film for example, a silicon film, a silicon oxide film, a silicon nitride film, an amorphous silicon film, a polysilicon film, or the like is applied.
- metal-containing film for example, a tungsten film, a titanium film, a titanium nitride film, an aluminum oxide film, a hafnium oxide film, or the like is applied.
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Abstract
Description
本発明の一実施形態に係る基板処理装置について、図1から図3を用いて以下に説明する。 (1) Configuration of Substrate Processing Apparatus A substrate processing apparatus according to an embodiment of the present invention will be described below with reference to FIGS.
処理装置100は、ウエハ200をプラズマ処理する処理炉202を備えている。処理炉202は、処理室201を構成する処理容器203を備えている。処理容器203は、第1の容器であるドーム型の上側容器210と、第2の容器である碗型の下側容器211とを備えている。上側容器210が下側容器211の上に被さることにより、処理室201が形成される。 (Processing room)
The
処理室201の底側中央には、ウエハ200を載置する基板載置部としてのサセプタ217が配置されている。 (Susceptor)
In the center of the bottom side of the
処理室201の上方、つまり上側容器210の上部には、ガス供給ヘッド236が設けられている。ガス供給ヘッド236は、キャップ状の蓋体233と、ガス導入口234と、バッファ室237と、開口238と、遮蔽プレート240と、ガス吹出口239とを備え、反応ガスを処理室201内へ供給できるように構成されている。バッファ室237は、ガス導入口234より導入される反応ガスを分散する分散空間としての機能を持つ。 (Gas supply part)
A
下側容器211の側壁には、処理室201内から反応ガスを排気するガス排気口235が設けられている。ガス排気口235には、ガス排気管231の上流端が接続されている。ガス排気管231には、上流側から順に圧力調整器(圧力調整部)としてのAPC(Auto Pressure Controller)バルブ242、バルブ243b、真空排気装置としての真空ポンプ246が設けられている。 (Exhaust part)
A
処理室201の外周部、すなわち上側容器210の側壁の外側には、処理室201を囲うように螺旋状の共振コイル212が設けられている。共振コイル212には、RFセンサ272、高周波電源273と周波数整合器274が接続される。 (Plasma generator)
A
図3に示すように、制御部としてのコントローラ221は、CPU(Central Processing Unit)221a、RAM(Random Access Memory)221b、記憶装置221c、I/Oポート221dを備えたコンピュータとして構成されている。RAM221b、記憶装置221c、I/Oポート221dは、内部バス221eを介して、CPU221aとデータ交換可能なように構成されている。コントローラ221には、入出力装置225として、例えばタッチパネル、マウス、キーボード、操作端末等が接続されていてもよい。また、コントローラ221には、表示部として、例えばディスプレイ等が接続されていてもよい。 (Control part)
As shown in FIG. 3, the
次に、本実施形態に係る基板処理工程について説明する。図4(A)は、本実施形態に係る基板処理工程で処理されるトレンチ構造の基板を示しており、図4(B)は、本実施形態に係る基板処理工程で処理されるホール(孔)構造の基板を示している。また、図5は、図4に示す基板の構成の一例を示す図であり、トレンチ構造又はホール構造の深さ方向に沿った断面の一例を示している。本実施形態に係る基板処理工程は、例えばフラッシュメモリ等の半導体デバイスの製造工程の一工程として、上述の処理装置100により実施される。なお以下の説明において、処理装置100を構成する各部の動作は、コントローラ221により制御される。 (2) Substrate Processing Step Next, the substrate processing step according to the present embodiment will be described. FIG. 4A shows a substrate having a trench structure processed in the substrate processing step according to this embodiment, and FIG. 4B shows a hole (hole) processed in the substrate processing step according to this embodiment. ) Shows the structure substrate. FIG. 5 is a diagram illustrating an example of the configuration of the substrate illustrated in FIG. 4, and illustrates an example of a cross section along the depth direction of the trench structure or the hole structure. The substrate processing process according to this embodiment is performed by the above-described
まず、修復対象であるホール304が面上に形成されたウエハ200を処理室201内に搬入する。具体的には、サセプタ昇降機構268がサセプタ217を下降させて、サセプタ217の貫通孔217aから、ウエハ突き上げピン266をサセプタ217表面よりも所定の高さ分だけ突出させる。 (Substrate carrying-in process S110)
First, the
続いて、処理室201内に搬入されたウエハ200の昇温を行う。ヒータ217bは予め加熱されており、ヒータ217bが埋め込まれたサセプタ217上に、搬入されたウエハ200を保持することで、100~1000℃の範囲内であって、例えば700℃の所定の温度にウエハ200を加熱する。また、ウエハ200の昇温を行う間、真空ポンプ246によりガス排気管231を介して処理室201内を真空排気し、処理室201内の圧力を0.5Pa以上250Pa以下、より好ましくは10Pa以上200Pa以下の範囲内の所定値とする。真空ポンプ246は、少なくとも後述の基板搬出工程S150が終了するまで作動させておく。 (Temperature raising / evacuation process S120)
Subsequently, the temperature of the
次に、処理ガスとして水素原子と酸素原子を含有するガスを処理室201内に供給し、当該ガスをプラズマ励起することによりホール304の内面に対するプラズマ処理を実施する。本実施形態では、水素含有ガスであるH2ガスと酸素含有ガスであるO2ガスの混合ガスを供給する。 (Processing gas supply and plasma processing step S130)
Next, a gas containing hydrogen atoms and oxygen atoms is supplied into the
H2ガスとO2ガスの混合ガスの導入を開始して所定時間経過後(例えば数秒経過後)、共振コイル212に対して高周波電源273から高周波電力の印加を開始する。このとき、例えば27.12MHzの高周波電力を、0.1~3.5kWの範囲内の電力(本実施形態では2.5kW)で印加する。これにより、プラズマ生成空間の共振コイル212の電気的中点に相当する高さ位置にドーナツ状の誘導プラズマが励起される。励起されたプラズマによりH2ガス、O2ガスは活性化されて解離し、酸素活性種(Oラジカル)と水素活性種(Hラジカル)が生成される。なお、酸素を含む反応種として、水酸基ラジカルや酸素イオン等が生成されることもある。また、水素を含む反応種として水素イオン等が生成されることもある。 (Plasma excitation start process)
After the introduction of the mixed gas of H 2 gas and O 2 gas is started, application of high frequency power from the high
所定の処理時間が経過してH2ガス、O2ガスの供給を停止したら、ガス排気管231を用いて処理室201内を真空排気する。これにより、処理室201内のH2ガス、O2ガスや、その他の残留物が含まれる排ガス等を処理室201外へと排気する。その後、APCバルブ242の開度を調整し、処理室201内の圧力を処理室201に隣接する真空搬送室と同じ圧力に調整する。 (Evacuation step S140)
When the supply of H 2 gas and O 2 gas is stopped after a predetermined processing time has elapsed, the inside of the
処理室201内が所定の圧力となったら、サセプタ217をウエハ200の搬送位置まで下降させ、ウエハ突上げピン266上にウエハ200を支持させる。そして、ゲートバルブ244を開き、図中省略の搬送機構を用いてウエハ200を処理室201外へ搬出する。以上により、本実施形態に係る基板処理工程を終了する。 (Substrate unloading step S150)
When the inside of the
特に、ウエハに対して供給されるOラジカルに対するHラジカルの比率を、ホールの深さ方向における酸化層の厚さ分布が均一になるような比率を基準として、その基準となる比率よりも大きくすることにより、ホールの底面に向かって酸化層の厚さが大きくなる分布を得ることができる。 In the above-described embodiment, an example in which the ratio of the supply amount of H radicals and O radicals is adjusted so that the oxidation rate is maximized at the bottom of the
In particular, the ratio of H radicals to O radicals supplied to the wafer is made larger than the reference ratio based on the ratio that makes the thickness distribution of the oxide layer uniform in the hole depth direction. Thus, a distribution in which the thickness of the oxide layer increases toward the bottom surface of the hole can be obtained.
次に、高アスペクト比のホール状構造又はトレンチ構造等の凹状構造の内面に形成される膜を表面から改質して、厚さが底面に向かって大きくなるように酸化層を形成する他の実施形態について説明する。 (3) Second Embodiment Next, a film formed on the inner surface of a concave structure such as a high-aspect-ratio hole structure or a trench structure is modified from the surface so that the thickness increases toward the bottom surface. Another embodiment for forming an oxide layer will be described.
バルブ243a,253a,253bを開け、MFC252aにて流量制御しながら、バッファ室237を介して処理室201内へH2ガスを供給する。同時に、MFC252bにて流量制御しながら、バッファ室237を介して処理室201内へO2ガスを供給する。このとき、H2ガスとO2ガスの全流量(総流量)を0.5~3slmとする。 (Processing gas supply and plasma processing step S130)
The
第1の実施形態と同様に、H2ガスとO2ガスの混合ガスの導入後、共振コイル212に対して高周波電源273から高周波電力の印加を開始する。 (Plasma excitation start process)
Similarly to the first embodiment, after introducing the mixed gas of H 2 gas and O 2 gas, application of high frequency power from the high
特に、ホール304の上端部を流れる酸素活性種及び水素活性種の流速を、ホール304の深さ方向における酸化層の厚さの分布が均一になる流速よりも大きい所定の流速にすることにより、厚さがホール304の底面に向かって大きくなるように酸化層を形成することができる。 That is, in the hole-shaped wafer, as shown in FIG. 14B, the upper end portion of the
In particular, by setting the flow rates of the oxygen active species and hydrogen active species flowing through the upper end of the
さらに、MFC252a,252bそれぞれの開度を制御する場合、第1の実施形態のように、水素含有ガスと酸素含有ガスの供給流量の比率も併せて制御することにより、ホール内側の膜厚分布を制御してもよい。 Further, when the total flow rate of the gas used for the oxidation treatment is increased while the pressure in the
Furthermore, when controlling the opening degree of each of the MFCs 252a and 252b, as in the first embodiment, the ratio of the supply flow rates of the hydrogen-containing gas and the oxygen-containing gas is also controlled, so that the film thickness distribution inside the hole can be controlled. You may control.
図15(A)は、ホールパターンの一例を示す図である。また、図15(B)は、比較例に係る改質処理によりホール内面に形成された酸化層の厚さを示す図であって、図15(C)は、本実施例に係る改質処理によりホール内面に形成された酸化層の厚さを示す図である。 <
FIG. 15A is a diagram illustrating an example of a hole pattern. FIG. 15B is a diagram showing the thickness of the oxide layer formed on the inner surface of the hole by the modification process according to the comparative example. FIG. 15C shows the modification process according to this example. It is a figure which shows the thickness of the oxide layer formed in the hole inner surface by.
図16(A)は、アスペクト比20のホールパターンの一例を示す図であり、(B)は、処理室内に供給されるH2ガスとO2ガスの混合ガスの流量を1.0slm、0.6slm、2.0slmとして、それぞれ酸化層を形成した場合のホール内面の酸化層の厚さを示す図である。 <
FIG. 16A shows an example of a hole pattern with an aspect ratio of 20, and FIG. 16B shows the flow rate of the mixed gas of H 2 gas and O 2 gas supplied into the processing chamber at 1.0 slm, 0 It is a figure which shows the thickness of the oxide layer of the hole inner surface at the time of forming an oxide layer as .6 slm and 2.0 slm, respectively.
200・・・・ウエハ
201・・・・処理室
201a・・・プラズマ生成空間
201b・・・ 基板処理空間
202・・・・ 処理炉 DESCRIPTION OF
Claims (17)
- 酸素含有ガスと水素含有ガスを含む処理ガスを励起して、酸素活性種と水素活性種を生成する工程と、
前記酸素活性種と前記水素活性種を凹状構造が形成された基板に供給し、前記凹状構造の内面に形成された膜を表面から酸化して酸化層を形成する工程と、を有し、
前記酸化層を形成する工程では、前記基板に供給される前記酸素活性種と前記水素活性種の総流量における前記水素活性種の比率を、前記凹状構造の上端部において前記酸化層が形成される速度が最大となる第1の比率よりも大きい所定の比率にして、前記凹状構造の内面において前記上端部における厚さよりも厚さが大きくなるように前記酸化層を形成する、
半導体装置の製造方法。 Exciting a process gas containing an oxygen-containing gas and a hydrogen-containing gas to generate oxygen active species and hydrogen active species;
Supplying the oxygen active species and the hydrogen active species to a substrate having a concave structure, and oxidizing a film formed on the inner surface of the concave structure from the surface to form an oxide layer,
In the step of forming the oxide layer, the ratio of the hydrogen active species to the total flow rate of the oxygen active species supplied to the substrate and the hydrogen active species is determined, and the oxide layer is formed at the upper end of the concave structure. The oxide layer is formed so that the thickness is larger than the thickness at the upper end portion on the inner surface of the concave structure at a predetermined ratio larger than the first ratio at which the speed is maximum.
A method for manufacturing a semiconductor device. - 前記酸化層を形成する工程では、前記基板に供給される前記酸素活性種と前記水素活性種の総流量における前記水素活性種の比率を、前記凹状構造の深さ方向における前記酸化層の厚さの分布が均一となる第2の比率よりも大きい前記所定の比率にして、前記酸化層を、厚さが前記凹状構造の底面に向かって大きくなり、前記底面において最大となるように形成する、
請求項1記載の半導体装置の製造方法。 In the step of forming the oxide layer, the ratio of the hydrogen active species in the total flow rate of the oxygen active species and the hydrogen active species supplied to the substrate is determined by the thickness of the oxide layer in the depth direction of the concave structure. The oxide layer is formed such that the thickness increases toward the bottom surface of the concave structure and is maximized at the bottom surface, with the predetermined ratio being greater than the second ratio at which the distribution of
A method for manufacturing a semiconductor device according to claim 1. - 前記酸化層を形成する工程では、前記基板に供給される前記酸素活性種と前記水素活性種の総流量における前記水素活性種の比率を、前記凹状構造の底面において前記酸化層の形成される速度が最大となる第3の比率と等しい又はより大きい所定の比率にして、前記酸化層を厚さが前記凹状構造の底面に向かって大きくなり、前記底面において最大となるように前記酸化層を形成する、
請求項1記載の半導体装置の製造方法。 In the step of forming the oxide layer, the ratio of the hydrogen active species in the total flow rate of the oxygen active species and the hydrogen active species supplied to the substrate is determined according to the rate at which the oxide layer is formed on the bottom surface of the concave structure. The oxide layer is formed so that the thickness of the oxide layer increases toward the bottom surface of the concave structure and is maximized at the bottom surface, with a predetermined ratio equal to or greater than the third ratio at which To
A method for manufacturing a semiconductor device according to claim 1. - 前記第3の比率は、前記第1の比率よりも大きい請求項3記載の半導体装置の製造方法。 4. The method of manufacturing a semiconductor device according to claim 3, wherein the third ratio is larger than the first ratio.
- 前記酸素活性種と水素活性種を生成する工程において、前記処理ガスの総流量における前記水素含有ガスの流量比は、生成される前記水素活性種の比率が前記所定の比率となる比率である請求項1記載の半導体装置の製造方法。 In the step of generating the oxygen active species and the hydrogen active species, the flow ratio of the hydrogen-containing gas to the total flow rate of the processing gas is a ratio at which the ratio of the generated hydrogen active species is the predetermined ratio. Item 14. A method for manufacturing a semiconductor device according to Item 1.
- 前記酸素活性種と水素活性種を生成する工程において、前記処理ガスの総流量における前記水素含有ガスの流量比は、生成される前記水素活性種の比率が前記所定の比率となる比率である請求項3記載の半導体装置の製造方法。 In the step of generating the oxygen active species and the hydrogen active species, the flow ratio of the hydrogen-containing gas to the total flow rate of the processing gas is a ratio at which the ratio of the generated hydrogen active species is the predetermined ratio. Item 4. A method for manufacturing a semiconductor device according to Item 3.
- 前記流量比は5%より大きい請求項5記載の半導体装置の製造方法。 6. The method of manufacturing a semiconductor device according to claim 5, wherein the flow rate ratio is larger than 5%.
- 前記流量比は5%より大きく20%以下である請求項6記載の半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 6, wherein the flow rate ratio is greater than 5% and 20% or less.
- 前記酸素活性種と水素活性種を生成する工程の前に、処理室内に前記基板を搬入する工程を有し、
前記酸素活性種と水素活性種を生成する工程では、前記処理室内に供給された前記処理ガスをプラズマ励起することにより前記酸素活性種と前記水素活性種を生成する請求項6記載の半導体装置の製造方法。 Before the step of generating the oxygen active species and the hydrogen active species, the step of carrying the substrate into a processing chamber,
The semiconductor device according to claim 6, wherein in the step of generating the oxygen active species and the hydrogen active species, the oxygen active species and the hydrogen active species are generated by plasma-exciting the processing gas supplied into the processing chamber. Production method. - 前記酸素活性種と水素活性種を生成する工程では、前記酸素含有ガスの供給系と前記水素含有ガスの供給系をそれぞれ制御して、前記酸素含有ガスと前記水素含有ガスの流量比を調整する請求項9記載の半導体装置の製造方法。 In the step of generating the oxygen-activated species and the hydrogen-activated species, the flow rate ratio of the oxygen-containing gas and the hydrogen-containing gas is adjusted by controlling the oxygen-containing gas supply system and the hydrogen-containing gas supply system, respectively. A method for manufacturing a semiconductor device according to claim 9.
- 前記凹状構造の内面に形成された膜は、エッチング処理により酸素濃度が低下した露出した層を含み、前記凹状構造の底部における前記露出した層の酸素濃度が最も低い請求項3記載の半導体装置の製造方法。 4. The semiconductor device according to claim 3, wherein the film formed on the inner surface of the concave structure includes an exposed layer having an oxygen concentration reduced by an etching process, and the oxygen concentration of the exposed layer at the bottom of the concave structure is the lowest. Production method.
- 前記凹状構造の内面に形成された膜は、厚さが前記凹状構造の底面に向かって小さくなるように形成された酸化膜と、前記酸化膜の下地膜と、により構成されている請求項1記載の半導体装置の製造方法。 The film formed on the inner surface of the concave structure is constituted by an oxide film formed so that the thickness decreases toward the bottom surface of the concave structure, and a base film of the oxide film. The manufacturing method of the semiconductor device of description.
- 酸素含有ガスと水素含有ガスを含む処理ガスを励起して、酸素活性種と水素活性種を生成する工程と、
前記酸素活性種と前記水素活性種を凹状構造が形成された基板に供給し、前記凹状構造の内面に形成された膜を表面から酸化して酸化層を形成する工程と、を有し、
前記酸化層を形成する工程では、前記基板に供給される前記酸素活性種と前記水素活性種の総流量における前記水素活性種の比率を、前記凹状構造の深さ方向において前記酸化層が形成される速度の分布が所望の分布となるような比率とする、
半導体装置の製造方法。 Exciting a process gas containing an oxygen-containing gas and a hydrogen-containing gas to generate oxygen active species and hydrogen active species;
Supplying the oxygen active species and the hydrogen active species to a substrate having a concave structure, and oxidizing a film formed on the inner surface of the concave structure from the surface to form an oxide layer,
In the step of forming the oxide layer, the ratio of the hydrogen active species to the total flow rate of the oxygen active species and the hydrogen active species supplied to the substrate is determined in the depth direction of the concave structure. The ratio is such that the desired speed distribution is the desired distribution.
A method for manufacturing a semiconductor device. - 酸素含有ガスと水素含有ガスを含む処理ガスを励起して、酸素活性種と水素活性種を生成する工程と、
前記酸素活性種と前記水素活性種を凹状構造が形成された基板に供給し、前記凹状構造の内面に形成された膜を表面から酸化して酸化層を形成する工程と、を有し、
前記酸化層を形成する工程では、前記基板の表面を流れる前記酸素活性種及び前記水素活性種の流速を調整して、前記酸化層を、厚さが前記凹状構造の底面に向かって大きくなるように形成する、
半導体装置の製造方法。 Exciting a process gas containing an oxygen-containing gas and a hydrogen-containing gas to generate oxygen active species and hydrogen active species;
Supplying the oxygen active species and the hydrogen active species to a substrate having a concave structure, and oxidizing a film formed on the inner surface of the concave structure from the surface to form an oxide layer,
In the step of forming the oxide layer, the flow rate of the oxygen active species and the hydrogen active species flowing on the surface of the substrate is adjusted so that the thickness of the oxide layer increases toward the bottom surface of the concave structure. To form,
A method for manufacturing a semiconductor device. - 前記酸化層を形成する工程では、前記基板の表面を流れる前記酸素活性種及び前記水素活性種の流速を、前記凹状構造の深さ方向における前記酸化層の厚さの分布が均一になる流速よりも大きい所定の流速にして、前記酸化層を、厚さが前記凹状構造の底面に向かって大きくなるように形成する、
請求項14記載の半導体装置の製造方法。 In the step of forming the oxide layer, the flow rate of the oxygen active species and the hydrogen active species flowing on the surface of the substrate is set to a flow rate at which the thickness distribution of the oxide layer in the depth direction of the concave structure is uniform. A larger predetermined flow rate, and the oxide layer is formed so that the thickness increases toward the bottom surface of the concave structure,
The method for manufacturing a semiconductor device according to claim 14. - 酸素含有ガスと水素含有ガスを含む処理ガスを励起して、酸素活性種と水素活性種を生成する手順と、
前記酸素活性種と前記水素活性種を凹状構造が形成された基板に供給し、前記凹状構造の内面に形成された膜を表面から酸化して酸化層を形成する際に、前記基板に供給される前記酸素活性種と前記水素活性種の総流量における前記水素活性種の比率を、前記凹状構造の上端部において前記酸化層が形成される速度が最大となる第1の比率よりも大きい所定の比率にして、前記凹状構造の内面において前記上端部における厚さよりも厚さが大きくなるように前記酸化層を形成する手順と、を
コンピュータにより基板処理装置に実行させるプログラム。 A procedure for generating an oxygen active species and a hydrogen active species by exciting a processing gas including an oxygen-containing gas and a hydrogen-containing gas;
The oxygen active species and the hydrogen active species are supplied to a substrate having a concave structure, and the film formed on the inner surface of the concave structure is oxidized from the surface to form an oxide layer. The ratio of the hydrogen active species to the total flow rate of the oxygen active species and the hydrogen active species is greater than a first ratio that maximizes the rate at which the oxide layer is formed at the upper end of the concave structure. A program for causing a substrate processing apparatus to execute, by a computer, a procedure for forming the oxide layer so that the thickness of the inner surface of the concave structure is larger than the thickness of the upper end portion. - 供給された処理ガスがプラズマ励起されるプラズマ生成空間と、前記プラズマ生成空間に連通し基板が載置される基板処理空間と、を有する処理室と、
前記プラズマ生成空間に供給された前記処理ガスをプラズマ励起するよう構成されたプラズマ生成部と、
前記プラズマ生成空間に、前記処理ガスとして水素含有ガスと酸素含有ガスを供給するガス供給系と、
前記基板処理空間内に設けられ、凹状構造が形成された基板を載置する基板載置台と、
前記ガス供給系を制御して前記処理ガスを前記プラズマ生成空間に供給すると共に、前記プラズマ生成部を制御して前記プラズマ生成空間に供給された前記処理ガスをプラズマ励起することにより酸素活性種と水素活性種を前記基板に供給して、前記凹状構造の内面に形成された膜を表面から酸化して酸化層を形成する工程を行うよう構成された制御部と、を備え、
前記制御部は、前記酸化層を形成する工程において、前記基板に供給される前記酸素活性種と前記水素活性種の総流量における前記水素活性種の比率を、前記凹状構造の上端部において前記酸化層が形成される速度が最大となる第1の比率よりも大きい所定の比率にして、前記凹状構造の内面において前記上端部における厚さよりも厚さが大きくなるように前記酸化層を形成するよう構成されている、
基板処理装置。 A processing chamber having a plasma generation space in which the supplied processing gas is plasma-excited, and a substrate processing space in which the substrate is placed in communication with the plasma generation space;
A plasma generation unit configured to excite the processing gas supplied to the plasma generation space;
A gas supply system for supplying a hydrogen-containing gas and an oxygen-containing gas as the processing gas to the plasma generation space;
A substrate mounting table provided in the substrate processing space for mounting a substrate having a concave structure;
The gas supply system is controlled to supply the processing gas to the plasma generation space, and the plasma generation unit is controlled to plasma-excite the processing gas supplied to the plasma generation space. A control unit configured to supply a hydrogen active species to the substrate and oxidize a film formed on the inner surface of the concave structure from the surface to form an oxide layer; and
In the step of forming the oxide layer, the control unit determines a ratio of the hydrogen active species to a total flow rate of the oxygen active species and the hydrogen active species supplied to the substrate at the upper end portion of the concave structure. The oxide layer is formed to have a predetermined ratio larger than the first ratio at which the speed at which the layer is formed is maximized so that the thickness of the inner surface of the concave structure is greater than the thickness at the upper end. It is configured,
Substrate processing equipment.
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