WO2018176549A1 - 气敏电阻的制造方法及使用该方法制造的气体传感器 - Google Patents
气敏电阻的制造方法及使用该方法制造的气体传感器 Download PDFInfo
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- WO2018176549A1 WO2018176549A1 PCT/CN2017/082347 CN2017082347W WO2018176549A1 WO 2018176549 A1 WO2018176549 A1 WO 2018176549A1 CN 2017082347 W CN2017082347 W CN 2017082347W WO 2018176549 A1 WO2018176549 A1 WO 2018176549A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
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- the present invention relates to a method of manufacturing a sensor, and more particularly to a method of manufacturing a gas sensitive resistor and a gas sensor manufactured using the same.
- the general structure has the following parts: a silicon back cavity structure; a metal heating layer, a wiring metal layer, and a gas sensing material layer.
- the conventional gas sensor of the prior art has the following disadvantages: (1) the selectivity difference of the silicon cavity prepared by dry etching makes the structure uneven and unstable; (2) the electrode connection of the heating resistor and the gas sensitive resistor is different.
- the metal layer makes the structure complicated and the consistency is poor; (3) It can only be used as a gas-sensitive material, and it is difficult to make a variety of gas sensors; (4) It is difficult to be compatible with the aluminum-copper metal wiring process with low cost and reliable process.
- the quality of the environment is closely related to people's lives and work comfort and health.
- people's requirements for the environment have become higher and higher, people hope to have simple, reliable and inexpensive methods and products to detect the quality of ambient air, such as carbon monoxide, flammable gases, ethanol, NO2, etc.
- the amount of gas in the air is a relatively common method.
- such sensors have a long manufacturing process, a complicated structure, and low consistency and reliability.
- the object of the present invention is to provide a gas varistor which is simplified in process, high in structural stability, and capable of fabricating a plurality of gas sensing units on the same structure to realize multi-gas detecting function.
- Method and gas sensor manufactured using the method are provided.
- the present invention provides a method of manufacturing a gas sensitive resistor, comprising the following steps:
- Step 1 forming an empty silicon cavity on the back side of the silicon wafer
- Step 2 fabricating a heating resistor and a gas resistance measuring electrode on the front side of the silicon wafer;
- step 3 a heating resistor electrode is formed on the front side of the silicon wafer.
- step 1 comprises:
- Step 1 in the back side of the silicon wafer, a two-step etching method is used to fabricate an empty silicon cavity;
- Step 2 simultaneously fabricating a measuring electrode of a heating resistor and a gas resistance resistor on the front surface of the silicon wafer with the same metal layer;
- step 3 a gas sensing resistor and an electrode for heating the resistor are fabricated on the front side of the silicon wafer.
- step 1 comprises:
- Step 1.1 simultaneously growing a first dielectric layer on the front and back sides of the silicon wafer;
- Step 1.2 performing photoreceptor sensing on the back side of the silicon wafer
- Step 1.3 dry etching the silicon wafer substrate on the back surface to form a first-order silicon cavity
- step 1.4 the silicon substrate on the back side is wet-etched until the first dielectric layer forms a second-order silicon cavity; the first-order silicon cavity and the second-order silicon cavity are combined into an empty silicon cavity.
- step 2 comprises:
- Step 2.1 depositing a metal thin film layer by physical vapor deposition on the first dielectric layer
- Step 2.2 performing photolithography and dry etching on the metal thin film layer to form four gas resistance measuring electrodes and heating resistors;
- Step 2.3 depositing a second dielectric layer on the metal thin film layer by plasma enhanced chemical vapor deposition
- Step 2.4 performing photolithography and dry etching on the second dielectric layer, forming a first contact hole penetrating the second dielectric layer on the second dielectric layer;
- Step 2.5 coating a photoresist on the second dielectric layer
- Step 2.6 performing photoreceptor sensitization and development on the photoresist to obtain a metal oxide gas varistor pattern, and the photoresist in the gas varistor pattern is removed by the developer after development, and the photoresist outside the pattern is retained;
- Step 2.7 depositing a metal oxide film on the photoresist and the second dielectric layer by physical vapor deposition, the metal oxide film covering the second dielectric layer and the four gas resistance measuring electrodes and heating in the gas resistance pattern a metal oxide film covering the photoresist outside the gas resistance pattern;
- Step 2.8 removing the photoresist, removing the metal oxide film covering the photoresist from the gas resistance pattern, leaving a metal oxide film in the gas resistance pattern;
- step 2.9 the metal oxide film is baked to form a gas sensitive resistor.
- step 3 comprises:
- Step 3.1 performing photolithography and etching on the second dielectric layer covered by the non-metal oxide film, forming a second contact hole penetrating through the second dielectric layer on the second dielectric layer, and simultaneously retaining the photoresist;
- Step 3.2 depositing an alloy thin film on the photoresist and the second contact hole by physical vapor deposition
- step 3.3 the photoresist is removed, and the alloy film is formed into a Pad pattern.
- the Pad alloy film is connected to the underlying metal film layer of the heating resistor or the metal film layer of the measuring electrode of the gas sensor through the second contact hole.
- the thickness of the first dielectric layer is 0.5 micrometer to 2 micrometers, the material of the first dielectric layer is silicon oxide or silicon nitride; the thickness of the second dielectric layer is 100 nanometers to 1000 nanometers, and the material of the second dielectric layer is Silicon oxide or silicon nitride.
- the silicon wafer substrate on the back side is dry etched, and the remaining silicon wafer substrate has a thickness of 10 micrometers to 100 micrometers to form a first-order silicon cavity.
- the metal thin film layer has a thickness of 100 nm to 2 ⁇ m, and the metal thin film layer is made of a refractory metal, preferably a metal tungsten or a tungsten titanium alloy.
- the metal oxide film has a thickness of 100 nm to 800 nm, and the metal oxide film is made of a gas sensing material, preferably SnO 2 , ZnO, TiO 2 or SnO 2 doped with Fe, Zn, Pt or Pd. , ZnO or TiO 2 ;
- the alloy film has a thickness of 0.5 ⁇ m to 3 ⁇ m, and the alloy film is made of an aluminum-copper alloy or an aluminum-copper-silicon alloy.
- the metal oxide film is baked in a vacuum or nitrogen atmosphere at a temperature of 300 ° C to 900 ° C for a period of 10 minutes to 8 hours.
- a gas sensor manufactured by a method of manufacturing a gas sensitive resistor.
- the beneficial effects of the present invention are as follows: the dry-wet two-step process can significantly improve the efficiency and quality of etching.
- the process can use a layer of metal wiring to simultaneously achieve the heating function and resistance test function of the gas sensor, simplifying the process.
- Gas-sensitive materials are measured using a four-terminal Kevin structure that accurately measures the resistivity of a material at the same time.
- the invention adopts the Liftoff process to manufacture a gas-sensitive resistor and an aluminum metal wire, and can independently manufacture a sensing unit of a plurality of gas-sensitive materials.
- the process flow of the invention can be compatible with the mature low-cost aluminum-copper metal wiring process at the same time, which is beneficial to mass production of the product.
- FIG. 1 is a schematic view showing a manufacturing method of a gas-sensitive resistor of the present invention
- FIG. 2 is a schematic view showing the manufacturing method of the gas-sensitive resistor of the present invention
- FIG. 3 is a schematic view 3 of a method for manufacturing a gas sensitive resistor of the present invention.
- FIG. 4 is a schematic view showing the manufacturing method of the gas sensitive resistor of the present invention.
- FIG. 5 is a schematic view showing the manufacturing method of the gas sensitive resistor of the present invention.
- FIG. 6 is a schematic view showing a manufacturing method of a gas-sensitive resistor of the present invention.
- Figure 7 is a schematic view showing the manufacturing method of the gas sensitive resistor of the present invention.
- Figure 8 is a schematic view showing the manufacturing method of the gas-sensitive resistor of the present invention
- Fig. 9 is a schematic view 9 showing a method of manufacturing a gas-sensitive resistor of the present invention.
- the manufacturing method of the gas-sensitive resistor of the present invention comprises: Step 1: growing a first dielectric layer of silicon oxide or silicon nitride on the front and back surfaces of a 100-crystal N-type or P-type silicon wafer 1. 2, the thickness is between 0.5 microns and 2 microns;
- Step 2 Make the first mask 3 (photosensitive) on the back of the silicon wafer;
- Step 3 first dry etching the back silicon substrate, the remaining silicon thickness is between about 10 microns and 100 microns, forming a first-order silicon cavity 4;
- Step 4 further wet etching the back silicon wafer 1 to stop on the first dielectric layer 2 on the surface to form a second-order silicon cavity 5, a first-order silicon cavity 4 and a second-order silicon cavity 5 to synthesize an empty silicon cavity Body 8; Since the wet silicon etching has good selectivity to the dielectric layer, the etching is automatically stopped on the dielectric layer, the process is stable, and the structure is reliable.
- Step 5 depositing a metal thin film layer 6 with a thickness of between 100 nanometers and 2 micrometers, and the material may be metal tungsten, or a tungsten-titanium alloy, or other refractory metal.
- the metal thin film layer 6 simultaneously serves two important functions: one as a heating resistor and the other as an electrode for measuring a gas-sensitive metal oxide.
- Step 6 Perform a second front side photolithography and dry etching on the metal thin film layer 6 to form a measuring electrode of a heating resistor and a gas resistance resistor.
- Step 7 depositing a second dielectric layer 7 of silicon oxide or silicon nitride on the metal thin film layer 6 by a PECVD process to a thickness of between 100 nm and 1000 nm.
- Step 8 performing a third front side photolithography and a second dielectric layer etching on the silicon oxide or silicon nitride second dielectric layer 7, to obtain a first contact hole 9.
- the first contact hole 9 is exposed by the first gas-sensitive resistance measuring electrode 11, the second gas-sensitive resistance measuring electrode 12, the third gas-sensitive resistance measuring electrode 13, and the fourth gas-sensitive resistance measuring electrode 14, which is measuring gas sensitivity.
- Step 9 doing the fourth photomask sensitization, obtaining a metal oxide gas varistor pattern, leaving the photoresist 17;
- Step 10 depositing a metal oxide film 10 on the photoresist 17 by a PVD method, the thickness of which is between 100 nm and 800 nm, and the material may be a gas sensitive substance such as SnO 2 , ZnO or TiO 2 , or through Fe, Such a gas-sensitive substance doped with an element such as Zn, Pt or Pd.
- Step 11 removing the photoresist using a solvent, and leaving the gas-sensitive metal oxide film covering the first gas-resistance measuring electrode 11, the second gas-resistance measuring electrode 12, the third gas-resistance measuring electrode 13 and the first
- the first gas sensing resistor measures the first contact hole 9 of the electrode 14 and is connected to the outer test pad, respectively.
- the metal oxide film 10 is covered under the heating resistor 16 formed of the first metal layer 6, but is electrically isolated from the second dielectric layer 7 by silicon oxide or silicon nitride.
- Step 12 Baking in a vacuum or nitrogen atmosphere at a certain temperature to crystallize the metal oxide to form a gas-sensitive resistor of a desired stable property.
- the baking temperature is between 300 ° C and 700 ° C and the time is between 10 minutes and 8 hours.
- Step 13 If two or more gas sensitive materials are required, the above process steps 9 to 12 can be repeated.
- Step 14 performing a fifth photolithography on the silicon oxide or silicon nitride second dielectric layer 7, etching the silicon oxide or silicon nitride second dielectric layer 7, forming a second contact hole, and leaving the photoresist.
- Step 15 PVD deposits an aluminum or aluminum-copper alloy film 15 having a thickness between 0.5 microns and 3 microns. After removing the photoresist with a solvent, the aluminum or aluminum-copper alloy film 15 is formed on the electrode of the heating resistor 16 formed in the second contact hole and the first metal layer 6, and the first gas-resistance measuring electrode 11, and the second gas-sensitive resistance measurement The electrode 12, the third gas-sensitive resistance measuring electrode 13 and the fourth gas-sensitive resistance measuring electrode 14 are connected as an external pad.
- Step 16 Plan view of the entire structure, including the heating resistor 16 and its electrodes, the first gas-sensitive resistance measuring electrode 11, the second gas-sensitive resistance measuring electrode 12, and the third gas-sensitive resistor of the Kevin structure for measuring the characteristics of the gas-sensing resistance
- the measuring electrode 13 and the fourth gas-sensitive resistance measuring electrode 14 are used.
- Step 17 At this point, the new gas sensor MEMS structure completes the process.
- Figure 9 is an equivalent circuit diagram including the both ends of the heating resistor 16Rheater, the first gas-sensitive resistance measuring electrode 11, the second gas-sensitive resistance measuring electrode 12, the third gas-sensitive resistance measuring electrode 13 and the first of the gas-sensitive resistor Rgas The four gas resistance measuring electrode 14 is used.
- the present invention also provides a gas sensor manufactured using the above-described manufacturing method of a gas-sensitive resistor.
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Abstract
一种气敏电阻的制造方法及使用该方法制造的气体传感器,包括如下步骤:步骤1,在硅片(1)的背面用两阶刻蚀法制作空硅腔体(8);步骤2,在硅片(1)的正面用同一金属层(6)同时制作加热电阻(16)和气敏电阻的测量电极(11,12,13);步骤3,在硅片(1)的正面制作气敏电阻以及加热电阻(16)的电极。该气敏电阻的制造方法采用干法湿法两步工艺,可以明显提高刻蚀的效率和质量。工艺流程可以使用一层金属布线同时实现气敏电阻的加热功能和电阻测试功能,简化工艺。气敏材料的测量采用四端的Kevin结构,可以同时精确测量材料的电阻率变化。采用Lift-off工艺制作气敏电阻和铝金属连线,可以独立制作多个气敏材料的传感单元。同时可以与低成本的铝铜金属布线工艺兼容。
Description
本发明涉及一种传感器的制造方法,特别是一种气敏电阻的制造方法及使用该方法制造的气体传感器。
用气敏金属氧化物检测气体的传感器已经被研究多时,相关的专利也有申请和授予。因为金属氧化物的气敏特性只有在较高的温度下才能表现出来,通常的气体传感器需要有加热功能和绝热功能。因此,气体传感器的结构比较复杂。一般的结构具有以下几个部分:硅背面空腔结构;金属加热层,连线金属层,以及气敏材料层。传统的此类气敏传感器有以下几个缺点:(1)干法刻蚀制作硅空腔的选择性差,使得结构不均匀不稳定;(2)加热电阻与气敏电阻的电极连线用不同的金属层,使得结构复杂,一致性差;(3)只能做一种气敏材料,难以做多种气体传感器;(4)难以与成本低廉,工艺可靠的铝铜金属布线工艺兼容。
环境的质量与人们的生活和工作舒适度,健康息息相关。近几年来,随着人们对环境的要求越来越高,人们希望能有简单可靠,价格便宜的方法和产品检测环境空气的质量,比如一氧化碳,可燃性气体,乙醇,NO2等的不适或有毒气体在空气中的含量。利用金属氧化物的气敏特性来测量气体含量是一种比较常用的方法。但是,此类传感器制造工艺冗长,结构复杂,一致性和可靠性低。
发明内容
针对现有技术中的缺陷,本发明的目的是提供一种工艺简化、结构的稳定性高,而且可以在同一结构上制作多个气敏单元,实现多气体的检测功能的气敏电阻的制造方法及使用该方法制造的气体传感器。
为解决上述技术问题,本发明提供一种气敏电阻的制造方法,包括如下步骤:
步骤1,在硅片的背面制作空硅腔体;
步骤2,在硅片的正面制作加热电阻和气敏电阻测量电极;
步骤3,在硅片的正面制作加热电阻电极。
优选地,步骤1包括:
步骤1,在硅片的背面用两阶刻蚀法制作空硅腔体;
步骤2,在硅片的正面用同一金属层同时制作加热电阻和气敏电阻的测量电极;
步骤3,在硅片的正面制作气敏电阻以及加热电阻的电极。
优选地,步骤1包括:
步骤1.1,在硅片的正面和背面同时生长第一介质层;
步骤1.2,在硅片背面进行光罩感光;
步骤1.3,用干法刻蚀背面的硅片衬底,形成一阶硅空腔;
步骤1.4,用湿法刻蚀背面的硅片衬底,直至第一介质层,形成的二阶硅空腔;一阶硅空腔和二阶硅空腔合成空硅腔体。
优选地,步骤2包括:
步骤2.1,在第一介质层上用物理气相沉积法淀积金属薄膜层;
步骤2.2,对金属薄膜层进行光刻和干法刻蚀,形成四个气敏电阻测量电极及加热电阻;
步骤2.3,在金属薄膜层上用等离子体增强化学气相沉积法淀积第二介质层;
步骤2.4,对第二介质层进行光刻和干法刻蚀,在第二介质层上形成贯穿第二介质层的第一接触孔;
步骤2.5,在第二介质层上涂布光刻胶;
步骤2.6,对光刻胶进行光罩感光和显影,得到金属氧化物气敏电阻图形,显影后气敏电阻图形内的光刻胶被显影液去除,图形外的光刻胶保留;
步骤2.7,在光刻胶及第二介质层上用物理气相沉积法淀积金属氧化物薄膜,金属氧化物薄膜在气敏电阻图形内覆盖第二介质层和四个气敏电阻测量电极和加热电阻;金属氧化物薄膜在气敏电阻图形外覆盖光刻胶;
步骤2.8,去除光刻胶,将气敏电阻图形外覆盖光刻胶的金属氧化物薄膜去除,留下气敏电阻图形内的金属氧化物薄膜;
步骤2.9,对金属氧化物薄膜进行烘烤,形成气敏电阻。
优选地,步骤3包括:
步骤3.1,对非金属氧化物薄膜覆盖的第二介质层进行光刻和刻蚀,在第二介质层上Pad区域形成贯穿第二介质层的第二接触孔,并同时保留光刻胶;
步骤3.2,在光刻胶及第二接触孔上用物理气相沉积法淀积合金薄膜;
步骤3.3,去除光刻胶,使合金薄膜形成Pad图形,Pad合金薄膜通过第二接触孔与下面的加热电阻的金属薄膜层或气敏电阻的测量电极的金属薄膜层连接。
优选地,第一介质层的厚度为0.5微米~2微米,第一介质层的材质为氧化硅或氮化硅;第二介质层的厚度为100纳米~1000纳米,第二介质层的材质为氧化硅或氮化硅。
优选地,步骤1.3中,用干法刻蚀背面的硅片衬底,剩余的硅片衬底的厚度为10微米~100微米,形成一阶硅空腔。
优选地,金属薄膜层的厚度为100纳米~2微米,金属薄膜层的材质为耐熔金属,优选为金属钨或钨钛合金。
优选地,金属氧化物薄膜的厚度为100纳米~800纳米,金属氧化物薄膜的材质为气敏材料,优选为SnO2、ZnO、TiO2或经过Fe、Zn、Pt或Pd掺杂的SnO2、ZnO或TiO2;
合金薄膜的厚度为0.5微米~3微米,合金薄膜的材质为铝铜合金或铝铜硅合金。
优选地,步骤2.9中,在真空或氮气气氛中对金属氧化物薄膜进行烘烤,烘烤的温度为在300℃~900℃,时间为10分钟~8小时。
一种气体传感器,气体传感器采用气敏电阻的制造方法制造。
与现有技术相比,本发明的有益效果如下:采用干法湿法两步工艺,可以明显提高刻蚀的效率和质量。工艺流程可以使用一层金属布线同时实现气敏电阻的加热功能和电阻测试功能,简化工艺。气敏材料的测量采用四端的Kevin结构,可以同时精确测量材料的电阻率变化。本发明采用Liftoff工艺制作气敏电阻和铝金属连线,可以独立制作多个气敏材料的传感单元。本发明的工艺流程同时可以与成熟的低成本的铝铜金属布线工艺兼容,有利于产品的量产化。
通过阅读参照以下附图对非限制性实施例所作的详细描述,本发明的其它特征目的和优点将会变得更明显。
图1为本发明气敏电阻的制造方法示意图一
图2为本发明气敏电阻的制造方法示意图二
图3为本发明气敏电阻的制造方法示意图三
图4为本发明气敏电阻的制造方法示意图四
图5为本发明气敏电阻的制造方法示意图五
图6为本发明气敏电阻的制造方法示意图六
图7为本发明气敏电阻的制造方法示意图七
图8为本发明气敏电阻的制造方法示意图八
图9为本发明气敏电阻的制造方法示意图九。
下面结合具体实施例对本发明进行详细说明。以下实施例将有助于本领域的技术人员进一步理解本发明,但不以任何形式限制本发明。应当指出的是,对本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变化和改进。这些都属于本发明的保护范围。
如图1~图9所示,本发明气敏电阻的制造方法,包括:步骤1:在100晶向的N型或P型硅片1上正反面生长氧化硅或氮化硅第一介质层2,厚度在0.5微米至2微米之间;
步骤2:在硅片背面做第一次光罩3(感光);
步骤3:先用干法刻蚀背面硅衬底,剩余硅厚度约在10微米到100微米之间,形成一阶硅空腔4;
步骤4:再做湿法刻蚀背面硅片1,停止在表面的第一介质层2上,形成二阶硅空腔5,一阶硅空腔4和二阶硅空腔5合成空硅腔体8;由于湿法硅刻蚀对介质层有很好的选择性,因此刻蚀自动停止在介质层上,工艺稳定,结构可靠。
步骤5:用PVD淀积金属薄膜层6,厚度在100纳米至2微米之间,材料可以为金属钨,或钨钛合金,或其它耐熔金属。金属薄膜层6同时起到两个重要功能:一是作为加热电阻,二是作为测量气敏金属氧化物的电极。
步骤6:在金属薄膜层6上做第二次正面光刻和干法刻蚀,形成加热电阻和气敏电阻的测量电极。
步骤7:在金属薄膜层6上面用PECVD工艺淀积氧化硅或氮化硅第二介质层7,厚度在100纳米1000纳米之间。
步骤8:在氧化硅或氮化硅第二介质层7上做第三次正面光刻和第2介质层刻蚀,得到第一接触孔9。第一接触孔9暴露出来的是第一气敏电阻测量电极11、第二气敏电阻测量电极12、第三气敏电阻测量电极13和第四气敏电阻测量电极14,这是测量气敏电阻的Keven结构的四个电极。
步骤9:做第四次光罩感光,得到金属氧化物气敏电阻图形,保留光刻胶17;
步骤10:在光刻胶17上面用PVD的方法淀积金属氧化物薄膜10,厚度在100纳米至800纳米之间,材料可以是SnO2、ZnO、TiO2等气敏物质,或经过Fe、Zn、Pt或Pd等元素掺杂的此类气敏物质。
步骤11:使用溶剂把光刻胶去除,留下来的气敏金属氧化物薄膜覆盖以上第一气敏电阻测量电极11、第二气敏电阻测量电极12、第三气敏电阻测量电极13和第四气敏电阻测量电极14的第一接触孔9,并分别连接到外面的测试Pad。同时,金属氧化物薄膜10下面覆盖由第一金属层6形成的加热电阻16,但与其通过氧化硅或氮化硅第二介质层7电隔离。
步骤12:在一定的温度下做真空或氮气气氛烘烤,使金属氧化物结晶形成所需稳定特性的气敏电阻。烘烤温度在300℃至700℃之间,时间为10分钟至8小时之间。
步骤13:如果需要做二种或多种气敏材料,可以重复上述流程步骤9-步骤12。
步骤14:对氧化硅或氮化硅第二介质层7做第5次光刻,刻蚀氧化硅或氮化硅第二介质层7,形成第二接触孔,保留光刻胶。
步骤15:PVD淀积铝或铝铜合金薄膜15,厚度在0.5微米至3微米之间。用溶剂去除光刻胶后,铝或铝铜合金薄膜15在第二接触孔与第一金属层6形成的加热电阻16的电极,以及第一气敏电阻测量电极11、第二气敏电阻测量电极12、第三气敏电阻测量电极13和第四气敏电阻测量电极14连接,作为外接Pad。
步骤16:整个结构的平面图,包括加热电阻16及其电极,用于测量气敏电阻特性的Kevin结构的第一气敏电阻测量电极11、第二气敏电阻测量电极12、第三气敏电阻测量电极13和第四气敏电阻测量电极14。
步骤17:至此,新型的气体传感器MEMS结构完成工艺。
图9为等效电路图,其中包括加热电阻16Rheater的两端电极,气敏电阻Rgas的第一气敏电阻测量电极11、第二气敏电阻测量电极12、第三气敏电阻测量电极13和第四气敏电阻测量电极14。
本发明还提供了一种使用上述气敏电阻的制造方法制造的气体传感器。
以上对本发明的具体实施例进行了描述。需要理解的是,本发明并不局限于上述特定实施方式,本领域技术人员可以在权利要求的范围内做出各种变化或修改,这并不影响本发明的实质内容。在不冲突的情况下,本申请的实施例和实施例中的特征可以任意相互组合。
Claims (10)
- 一种气敏电阻的制造方法,其特征在于,包括如下步骤:步骤1,在硅片的背面用两阶刻蚀法制作空硅腔体;步骤2,在硅片的正面用同一金属层同时制作加热电阻和气敏电阻的测量电极;步骤3,在硅片的正面制作气敏电阻以及加热电阻的电极。
- 根据权利要求1所述的气敏电阻的制造方法,其特征在于,步骤1包括:步骤1.1,在硅片的正面和背面同时生长第一介质层;步骤1.2,在硅片背面进行光罩感光;步骤1.3,用干法刻蚀背面的硅片衬底,形成一阶硅空腔;步骤1.4,用湿法刻蚀背面的硅片衬底,直至第一介质层,形成的二阶硅空腔;一阶硅空腔和二阶硅空腔合成空硅腔体。
- 根据权利要求2所述的气敏电阻的制造方法,其特征在于,步骤2包括:步骤2.1,在第一介质层上用物理气相沉积法淀积金属薄膜层;步骤2.2,对金属薄膜层进行光刻和干法刻蚀,形成四个气敏电阻测量电极及加热电阻;步骤2.3,在金属薄膜层上用等离子体增强化学气相沉积法淀积第二介质层;步骤2.4,对第二介质层进行光刻和干法刻蚀,在第二介质层上形成贯穿第二介质层的第一接触孔;步骤2.5,在第二介质层上涂布光刻胶;步骤2.6,对光刻胶进行光罩感光和显影,得到金属氧化物气敏电阻图形,显影后气敏电阻图形内的光刻胶被显影液去除,图形外的光刻胶保留;步骤2.7,在光刻胶及第二介质层上用物理气相沉积法淀积金属氧化物薄膜,金属氧化物薄膜在气敏电阻图形内覆盖第二介质层和四个气敏电阻测量电极和加热电阻;金属氧化物薄膜在气敏电阻图形外覆盖光刻胶;步骤2.8,去除光刻胶,将气敏电阻图形外覆盖光刻胶的金属氧化物薄膜去除,留下气敏电阻图形内的金属氧化物薄膜;步骤2.9,对金属氧化物薄膜进行烘烤,形成气敏电阻。
- 根据权利要求3所述的气敏电阻的制造方法,其特征在于,步骤3包括:步骤3.1,对非金属氧化物薄膜覆盖的第二介质层进行光刻和刻蚀,在第二介质层 上Pad区域形成贯穿第二介质层的第二接触孔,并同时保留光刻胶;步骤3.2,在光刻胶及第二接触孔上用物理气相沉积法淀积合金薄膜;步骤3.3,去除光刻胶,使合金薄膜形成Pad图形,Pad合金薄膜通过第二接触孔与下面的加热电阻的金属薄膜层或气敏电阻的测量电极的金属薄膜层连接。
- 根据权利要求4所述的气敏电阻的制造方法,其特征在于,第一介质层的厚度为0.5微米~2微米,第一介质层的材质为氧化硅或氮化硅;第二介质层的厚度为100纳米~1000纳米,第二介质层的材质为氧化硅或氮化硅。
- 根据权利要求4所述的气敏电阻的制造方法,其特征在于,步骤1.3中,用干法刻蚀背面的硅片衬底,剩余的硅片衬底的厚度为10微米~100微米,形成一阶硅空腔。
- 根据权利要求4所述的气敏电阻的制造方法,其特征在于,金属薄膜层的厚度为100纳米~2微米,金属薄膜层的材质为耐熔金属,优选为金属钨或钨钛合金。
- 根据权利要求4所述的气敏电阻的制造方法,其特征在于,金属氧化物薄膜的厚度为100纳米~800纳米,金属氧化物薄膜的材质为气敏材料,优选为SnO2、ZnO、TiO2或经过Fe、Zn、Pt或Pd掺杂的SnO2、ZnO或TiO2;合金薄膜的厚度为0.5微米~3微米,合金薄膜的材质为铝铜合金或铝铜硅合金。
- 根据权利要求4所述的气敏电阻的制造方法,其特征在于,步骤2.9中,在真空或氮气气氛中对金属氧化物薄膜进行烘烤,烘烤的温度为在300℃~900℃,时间为10分钟~8小时。
- 一种气体传感器,其特征在于,气体传感器采用权利要求1至9任意一项所述的气敏电阻的制造方法制造。
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