光刻装置及方法Lithographic apparatus and method
技术领域Technical field
本发明涉及光刻机技术领域,特别涉及一种光刻装置及方法。The present invention relates to the field of lithography machines, and in particular, to a lithography apparatus and method.
背景技术Background technique
投影扫描式光刻机的作用是把掩膜版上的图形清晰、正确地成像在涂有光刻胶的基板上,对于大尺寸基板而言,现有技术采用拼接镜头以提供适应大尺寸基板的大视场,但拼接镜头存在诸多设计风险以及高成本。而且,针对特殊工艺,如小面积的掩膜版工况下,需要采用小视场实现曝光,此种工况下并不适合继续采用提供大视场的拼接镜头。The function of the projection scanning lithography machine is to clearly and correctly image the pattern on the reticle on the photoresist-coated substrate. For large-size substrates, the prior art uses a splicing lens to provide a large size for the large-sized substrate. Field of view, but the splicing lens has many design risks and high costs. Moreover, for special processes, such as small-area masking conditions, a small field of view is required to achieve exposure. Under such conditions, it is not suitable to continue to use a splicing lens that provides a large field of view.
发明内容Summary of the invention
本发明的目的在于提供一种光刻装置及方法,以适用于小视场、大基板的工况。It is an object of the present invention to provide a lithographic apparatus and method suitable for use in small field of view and large substrate operating conditions.
为解决上述技术问题,本发明提供一种光刻装置,包括两个曝光装置和一基板装置,其中:所述基板装置包括一基板台,所述基板台用于承载一基板;所述两个曝光装置沿曝光扫描方向对称分布在所述基板台上方,用于同时在所述基板上形成两个曝光场,对所述曝光场内基板进行曝光。In order to solve the above problems, the present invention provides a lithographic apparatus comprising two exposure devices and a substrate device, wherein: the substrate device comprises a substrate stage, the substrate stage is for carrying a substrate; The exposure device is symmetrically distributed above the substrate stage along the exposure scanning direction for simultaneously forming two exposure fields on the substrate to expose the substrate in the exposure field.
进一步的,所述两个曝光装置中的每一曝光装置包括照明装置、掩膜台、物镜、对准装置及垂向测量传感器,其中:所述掩膜台用于承载一掩膜版,所述照明装置位于所述掩膜台的上方,所述物镜位于所述掩膜台的下方,所述对准装置和所述垂向测量传感器位于所述基板台上方,所述对准装置用于测量所述基板相对所述掩膜版的位置,所述垂向测量传感器用于测量所述基板的面形。Further, each of the two exposure devices includes an illumination device, a mask table, an objective lens, an alignment device, and a vertical measurement sensor, wherein: the mask table is used to carry a mask plate, The illumination device is located above the mask table, the objective lens is located below the mask table, the alignment device and the vertical measurement sensor are located above the substrate table, and the alignment device is used for A position of the substrate relative to the mask is measured, and the vertical measuring sensor is used to measure a surface shape of the substrate.
进一步的,所述对准装置包括基板对准装置和掩膜对准装置,所述基板对准装置用于测量所述基板相对所述基板台的位置,所述掩膜对准装置用于测量所述掩膜版相对所述基板台的位置。Further, the alignment device includes a substrate alignment device for measuring a position of the substrate relative to the substrate stage, and a mask alignment device for measuring The position of the mask relative to the substrate stage.
进一步的,所述基板装置还包括多块基准板,每一所述曝光装置对应至少一块基准板,所述基准板上设有基准板标记,所述基板对准装置和所述掩膜对准装置测量对应的基准板上的所述基准板标记的位置以获得所述基板和所述掩膜版相对所述基板台的位置。Further, the substrate device further includes a plurality of reference plates, each of the exposure devices corresponding to at least one reference plate, the reference plate is provided with a reference plate mark, and the substrate alignment device and the mask are aligned The device measures the position of the reference plate mark on the corresponding reference plate to obtain the position of the substrate and the mask relative to the substrate stage.
进一步的,所述掩膜对准装置设置在对应的基准板下方。Further, the mask alignment device is disposed under the corresponding reference plate.
进一步的,所述多块基准板包括与所述两个曝光装置对应的两块测量基准板,以及位于所述两块测量基准板之间的测校基准板,所述测校基准板上设有测校标记,每一曝光装置中的基板对准装置和掩膜对准装置通过定期测量所述测校标记的位置,实现对应的所述基板对准装置、掩膜对准装置相对所述基板台的位置的校准。Further, the plurality of reference plates include two measurement reference plates corresponding to the two exposure devices, and a calibration reference plate between the two measurement reference plates, the calibration reference plate Having a calibration mark, the substrate alignment device and the mask alignment device in each exposure device are configured to periodically measure the position of the calibration mark to achieve the corresponding substrate alignment device and mask alignment device Calibration of the position of the substrate stage.
进一步的,所述基板包括多个基板对准标记,所述基板对准装置通过测量所述基板对准标记的位置以获得所述基板的位置。Further, the substrate includes a plurality of substrate alignment marks, and the substrate alignment device obtains a position of the substrate by measuring a position of the substrate alignment mark.
本发明还提供一种采用上述光刻装置的光刻方法,包括:The invention also provides a photolithography method using the above lithographic apparatus, comprising:
步骤1、将基板放置于基板台上,将两个曝光装置沿扫描方向对称设置于所述基板的上方;Step 1, the substrate is placed on the substrate table, two exposure devices are symmetrically disposed above the substrate along the scanning direction;
步骤2、测量所述基板的整体面形,得到所述基板的全局调平调整量,执行基板的全局调平;Step 2: measuring an overall shape of the substrate, obtaining a global leveling adjustment amount of the substrate, and performing global leveling of the substrate;
步骤3、各所述曝光装置的基板对准装置同时执行基板对准,根据所述基板与所述基板台之间的位置关系计算所述基板的上板误差;Step 3: The substrate alignment device of each of the exposure devices simultaneously performs substrate alignment, and calculates an upper plate error of the substrate according to a positional relationship between the substrate and the substrate table;
步骤4、控制所述基板台和/或各所述曝光装置的掩膜台运动,以补偿所述基板的上板误差;Step 4, controlling movement of the mask table of the substrate table and/or each of the exposure devices to compensate for an upper plate error of the substrate;
步骤5、在曝光每个曝光场时,每一曝光装置的垂向测量传感器实时测量对应曝光场内的基板的局部面形,控制对应的掩膜台根据所述曝光场内的基板局部面形运动,使曝光的最佳焦面与所述基板上曝光场重合。Step 5. When exposing each exposure field, the vertical measuring sensor of each exposure device measures the local shape of the substrate in the corresponding exposure field in real time, and controls the corresponding mask table according to the partial shape of the substrate in the exposure field. The motion is such that the optimal focal plane of the exposure coincides with the exposure field on the substrate.
进一步的,所述步骤2包括:每一曝光装置的垂向测量传感器测量所述基板上测量点的位置(x
i,y
i,z
i),i=1,2,…,n,n为自然数,将所有测量点的位置(x
i,y
i,z
i)代入平面拟合模型z
i=wz-wwy·x
i+wwx·y
i,拟合得到所述基板的全局拟合面,其中wz为所述全局拟合面高度值,wwx为所述全局拟合面的X向倾斜值,wwy为所述全局拟合面的Y向倾斜值,再根据所述基板的全局拟合面与基板对准最佳焦面之间的差值确定所述基板的全局调平调整量。
Further, the step 2 includes: the vertical measuring sensor of each exposure device measures the position (x i , y i , z i ) of the measuring point on the substrate, i=1, 2, . . . , n, n is Natural number, substituting the positions (x i , y i , z i ) of all measurement points into the plane fitting model z i =wz-wwy·x i +wwx·y i , and fitting to obtain the global fitting surface of the substrate, Where wz is the global fit surface height value, wwx is the X-direction tilt value of the global fit surface, wwy is the Y-direction tilt value of the global fit surface, and then according to the global fitting surface of the substrate The difference between the best focal planes aligned with the substrate determines the global leveling adjustment of the substrate.
进一步的,所述基板对准最佳焦面为各曝光装置中物镜的参考焦面的平均值。Further, the substrate is aligned with the optimal focal plane as an average value of the reference focal plane of the objective lens in each exposure device.
进一步的,步骤3包括:Further, step 3 includes:
将所述两个曝光装置对应的基板区域分别定义为基板第一区域和基板第二区域,控制所述基板台沿着扫描方向运动,同时所述两个曝光装置的基板对准装置分别测量所述基板第一区域和所述基板第二区域的基板对准标记的位置;The substrate regions corresponding to the two exposure devices are respectively defined as a substrate first region and a substrate second region, and the substrate table is controlled to move along a scanning direction, and the substrate alignment devices of the two exposure devices respectively measure the same a position of the substrate alignment mark of the first region of the substrate and the second region of the substrate;
根据所述基板第一区域的基板对准标记的测量位置和名义位置,以及所述基板第二区域的基板对准标记的测量位置和名义位置计算所述基板的上板误差。Calculating an upper plate error of the substrate according to a measured position and a nominal position of the substrate alignment mark of the first region of the substrate, and a measured position and a nominal position of the substrate alignment mark of the second region of the substrate.
进一步的,计算所述基板的上板误差包括Further, calculating an upper board error of the substrate includes
将所述基板第一区域的基板对准标记的测量位置和名义位置代入下述公式计算所述基板第一区域相对所述基板台的偏移量(Rz_L,Cx_L,Cy_L),将所述基板第二区域的基板对准标记的测量位置和名义位置代入下述公式计算所述基板第二区域相对所述基板台的偏移量(Rz_R,Cx_R,Cy_R),Rz_L为所述 基板第一区域相对所述基板台的绕Z轴的旋转量,Cx_L、Cy_L分别为所述基板第一区域相对所述基板台的X、Y向平移量,Rz_R为所述基板第二区域相对所述基板台的绕Z轴的旋转量,Cx_R、Cy_R分别为所述基板第二区域相对所述基板台的X、Y向平移量,所述公式为:Calculating an offset (Rz_L, Cx_L, Cy_L) of the first region of the substrate relative to the substrate table by substituting the measured position and the nominal position of the substrate alignment mark of the first region of the substrate into the following formula, The measurement position and the nominal position of the substrate alignment mark of the second region are substituted into the following formula to calculate an offset (Rz_R, Cx_R, Cy_R) of the second region of the substrate relative to the substrate stage, and Rz_L is the first region of the substrate The amount of rotation about the Z axis relative to the substrate stage, Cx_L, Cy_L is the X, Y shift amount of the first region of the substrate relative to the substrate stage, and Rz_R is the second area of the substrate relative to the substrate stage The amount of rotation around the Z axis, Cx_R, Cy_R is the amount of X, Y translation of the second region of the substrate relative to the substrate table, respectively, the formula is:
其中,(X
i,Y
i)为所述基板对准标记的名义位置,dx
i、dy
i为所述基板对准标记的测量位置和名义位置的差值,Mx为所述基板的X向倍率,My为所述基板的Y向倍率,non_ortho为所述基板的非正交量。
Wherein (X i , Y i ) is the nominal position of the substrate alignment mark, dx i , dy i is the difference between the measured position and the nominal position of the substrate alignment mark, and Mx is the X direction of the substrate Magnification, My is the Y-direction magnification of the substrate, and non_ortho is the non-orthogonal amount of the substrate.
进一步的,所述步骤4中补偿所述基板的上板误差包括:Further, the error of compensating the upper board of the substrate in the step 4 includes:
先计算所述基板台的绕Z轴的旋转调整量dRz、X向平移调整量dCx及X向平移调整量dCy,控制所述基板台根据计算得到的调整量运动,补偿所述基板第一区域与所述基板第二区域相对所述基板台偏移量的公共部分:First, calculating a rotation adjustment amount dRz, an X-direction translation adjustment amount dCx, and an X-direction translation adjustment amount dCy of the substrate table around the Z-axis, and controlling the substrate table to compensate for the calculated adjustment amount movement to compensate the first region of the substrate a common portion offset from the second region of the substrate relative to the substrate table:
再计算所述基板第一区域对应的掩膜台的绕Z轴的旋转调整量RS.Rz_L、X向平移调整量RS.Cx_L及X向平移调整量RS.Cy_L,和所述基板第二区域对应的掩膜台的绕Z轴的旋转调整量RS.Rz_R、X向平移调整量RS.Cx_R及X向平移调整量RS.Cy_R,控制所述基板第一区域对应的掩膜台和所述基板第二区域对应的掩膜台根据相应的调整量运动,分别补偿所述基板第一区域与所述基板第二区域相对所述基板台偏移量的余量部分:Recalculating the rotation adjustment amount RS.Rz_L about the Z-axis of the mask table corresponding to the first region of the substrate, the X-direction translation adjustment amount RS.Cx_L, and the X-direction translation adjustment amount RS.Cy_L, and the second region of the substrate a rotation adjustment amount RS.Rz_R around the Z-axis of the corresponding mask table, an X-direction translation adjustment amount RS.Cx_R, and an X-direction translation adjustment amount RS.Cy_R, controlling a mask table corresponding to the first region of the substrate and the The mask table corresponding to the second region of the substrate is respectively moved according to the corresponding adjustment amount, and respectively compensates a margin portion of the offset between the first region of the substrate and the second region of the substrate relative to the substrate table:
进一步的,所述步骤4中补偿所述基板的上板误差包括:Further, the error of compensating the upper board of the substrate in the step 4 includes:
计算所述基板第一区域对应的掩膜台的绕Z轴的旋转调整量RS.Rz_L、X向平移调整量RS.Cx_L及X向平移调整量RS.Cy_L,和所述基板第二区域对应的掩膜台的绕Z轴的旋转调整量RS.Rz_R、X向平移调整量RS.Cx_R及X向平移调整量RS.Cy_R,控制所述基板第一区域对应的掩膜台和所述基板第二区域对应的掩膜台根据相应的调整量同时运动,分别补偿所述基板第一区域与所述基板第二区域相对所述基板台的偏移量:Calculating a rotation adjustment amount RS.Rz_L about the Z axis of the mask table corresponding to the first region of the substrate, an X-direction translation adjustment amount RS.Cx_L, and an X-direction translation adjustment amount RS.Cy_L, corresponding to the second region of the substrate a rotation adjustment amount RS.Rz_R around the Z-axis of the mask table, an X-direction translation adjustment amount RS.Cx_R, and an X-direction translation adjustment amount RS.Cy_R, controlling a mask table corresponding to the first region of the substrate and the substrate The mask stations corresponding to the second area are simultaneously moved according to the corresponding adjustment amounts, respectively compensating for the offset of the first area of the substrate and the second area of the substrate relative to the substrate stage:
RS.Rz_L=-Rz_L;RS.Rz_L=-Rz_L;
RS.Cx_L=-Cx_L;RS.Cx_L=-Cx_L;
RS.Cy_L=-Cy_L;RS.Cy_L=-Cy_L;
RS.Rz_R=-Rz_R;RS.Rz_R=-Rz_R;
RS.Cx_R=-Cx_R;RS.Cx_R=-Cx_R;
RS.Cy_R=-Cy_R。RS.Cy_R=-Cy_R.
进一步的,所述步骤5包括控制所述掩膜台运动以补偿所述曝光场内的基板的局部面形中的Z向高度和Rx、Ry向倾斜,其中Further, the step 5 includes controlling the mask table movement to compensate for the Z-direction height and the Rx and Ry directions in the partial shape of the substrate in the exposure field, wherein
所述掩膜台运动以补偿所述Z向高度包括:The movement of the mask table to compensate for the Z-direction height includes:
在每个曝光场曝光起点,所述掩膜台的Z向运动值RS.Z
set_i设定为
At the exposure start point of each exposure field, the Z-direction motion value RS.Z set_i of the mask stage is set to
扫描过程中,所述掩膜台的Z向运动值RS.Z
set_i设定为
During the scanning process, the Z-direction motion value RS.Z set_i of the mask table is set to
其中为RS.Z
ref_i为扫描曝光时所述掩模台沿参考物面运动的Z向设定值,FLS.Z
i为所述垂向测量传感器在当前采样周期内测得的Z向高度值,FLS.Z
i-1为所述垂向测量传感器在上一采样周期内测得的Z向高度值,BF_Die.Z为曝光的最佳焦面的Z向高度值,N为物镜的倍率,WSF为滤波参数;
Where RS.Z ref_i is the Z-direction set value of the mask table moving along the reference object plane during scanning exposure, and FLS.Z i is the Z-direction height value measured by the vertical measuring sensor in the current sampling period. FLS.Z i-1 is the Z-direction height value measured by the vertical measuring sensor in the previous sampling period, BF_Die.Z is the Z-direction height value of the optimal focal plane of the exposure, and N is the magnification of the objective lens. WSF is a filtering parameter;
所述掩膜台运动以补偿所述Rx向倾斜值RS.Rx
set_i包括:
The mask table moves to compensate for the Rx tilt value RS.Rx set_i includes:
在每个曝光场曝光起点,所述掩膜台的Rx向倾斜值RS.Rx
set_i设定为
At each exposure field exposure starting point, the Rx of the mask table is set to the tilt value RS.Rx set_i to
扫描过程中,所述掩膜台的Rx向倾斜值RS.Rx
set_i设定为
During the scanning process, the Rx of the mask table is set to the tilt value RS.Rx set_i to
其中为RS.Rx
ref_i为扫描曝光时所述掩模台沿参考物面运动的Rx向倾斜设定值,FLS.Rx
i为所述垂向测量传感器在当前采样周期内测得的Rx向倾斜值,FLS.Rx
i-1为所述垂向测量传感器在上一采样周期内测得的Rx向倾斜值,BF_Die.Rx为所述曝光的最佳焦面的Rx向倾斜值;
Where RS.Rx ref_i is the Rx tilt setting value of the mask table moving along the reference object plane during scanning exposure, and FLS.Rx i is the Rx tilt direction measured by the vertical measuring sensor during the current sampling period. The value, FLS.Rx i-1 is the Rx tilt value measured by the vertical measuring sensor in the last sampling period, and BF_Die.Rx is the Rx tilt value of the optimal focal plane of the exposure;
所述掩膜台运动以补偿所述Ry向倾斜值RS.Ry
set_i包括:
The mask stage moves to compensate for the Ry tilt value RS.Ry set_i includes:
在每个曝光场曝光起点,所述掩膜台的Ry向倾斜值RS.Ry
set_i设定为
At each exposure field exposure starting point, the Ry of the mask stage is set to the tilt value RS.Ry set_i to
扫描过程中,所述掩膜台的Ry向倾斜值RS.Ry
set_i设定为
During the scanning process, the Ry of the mask table is set to the tilt value RS.Ry set_i to
其中RS.Ry
ref_i为扫描曝光时所述掩模台沿参考物面运动的Ry向倾斜设定值,FLS.Ry
i为所述垂向测量传感器在当前采样周期内测得的Ry向倾斜值,FLS.Ry
i-1为所述垂向测量传感器在上一采样周期内测得的Ry向倾斜值, BF_Die.Ry为所述曝光的最佳焦面的Ry向倾斜值。
Where RS.Ry ref_i is a Ry tilt setting value of the mask table moving along the reference object plane during scanning exposure, and FLS.Ry i is a Ry tilt value measured by the vertical measuring sensor during the current sampling period. FLS.Ry i-1 is the Ry tilt value measured by the vertical measuring sensor in the last sampling period, and BF_Die.Ry is the Ry tilt value of the optimal focal plane of the exposure.
进一步的,所述步骤3中还包括各曝光装置的掩膜对准装置同时执行掩膜对准,获得各所述曝光装置的掩膜版与基板台之间的位置关系。Further, in the step 3, the mask alignment device of each exposure device simultaneously performs mask alignment to obtain a positional relationship between the mask of each exposure device and the substrate stage.
在本发明提供的光刻装置及方法,通过提供并行的小视场以实现大尺寸基板曝光,不仅降低了拼接镜头的设计难度,而且本发明易于扩展,可适用于更大尺寸基板,在降低制造成本的同时提高了工艺适应性。In the lithographic apparatus and method provided by the present invention, by providing a small field of view in parallel to achieve large-size substrate exposure, not only the design difficulty of the splicing lens is reduced, but also the invention is easy to expand, and can be applied to a larger-sized substrate, and the manufacturing is reduced. The cost increases the process adaptability at the same time.
附图说明DRAWINGS
图1是本发明的光刻装置结构示意图;Figure 1 is a schematic structural view of a lithographic apparatus of the present invention;
图2是本发明的光刻装置的基板的俯视图;Figure 2 is a plan view of a substrate of a lithographic apparatus of the present invention;
图3是本发明的光刻装置的基板对准标记示意图。3 is a schematic view of a substrate alignment mark of a lithographic apparatus of the present invention.
图中所示:10-基板台;11-第一照明装置;12-第二照明装置;21-第一掩膜版;22-第二掩膜版;31-第一掩膜台;32-第二掩膜台;41-第一物镜;42-第二物镜;51-第一基板对准装置;52-第二基板对准装置;61-第一垂向测量传感器;62-第二垂向测量传感器;7-基板;81-第一基准板;82-第二基准板;83-第三基准板;91-第一掩膜对准装置;92-第二掩膜对准装置。Shown in the figure: 10-substrate table; 11-first illumination device; 12-second illumination device; 21-first mask plate; 22-second mask plate; 31-first mask table; Second mask stage; 41-first objective lens; 42-second objective lens; 51-first substrate alignment device; 52-second substrate alignment device; 61-first vertical measurement sensor; 62-second vertical To the measuring sensor; 7-substrate; 81-first reference plate; 82-second reference plate; 83-third reference plate; 91-first mask alignment device; 92-second mask alignment device.
具体实施方式detailed description
以下结合附图和具体实施例对本发明提出的光刻装置及方法作进一步详细说明。根据下面说明和权利要求书,本发明的优点和特征将更清楚。需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。The lithographic apparatus and method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the description and appended claims. It should be noted that the drawings are in a very simplified form and all use non-precise proportions, and are only for convenience and clarity to assist the purpose of the embodiments of the present invention.
本发明的核心思想在于提供一种光刻装置及方法,提供并行小视场来实现大尺寸基板的曝光,同时解决曝光时基板局部形变的技术问题。The core idea of the present invention is to provide a lithographic apparatus and method that provides parallel small field of view to achieve exposure of a large-sized substrate while solving the technical problem of local deformation of the substrate during exposure.
为实现上述思想,本发明提供了一种光刻装置,包括至少两套曝光装置 和一套基板装置,其中:所述基板装置包括一基板台和一基板,所述基板台承载所述基板;所述至少两套曝光装置沿曝光扫描方向对称分布在所述基板上方,同时在所述基板上形成两个曝光场,对所述曝光场内基板进行曝光。In order to achieve the above, the present invention provides a lithographic apparatus comprising at least two sets of exposure apparatus and a set of substrate apparatus, wherein: the substrate apparatus comprises a substrate stage and a substrate, and the substrate stage carries the substrate; The at least two sets of exposure devices are symmetrically distributed over the substrate along the exposure scan direction while forming two exposure fields on the substrate to expose the substrate within the exposure field.
<实施例一><Example 1>
本实施例提供的光刻装置包括两套曝光装置,分别为第一曝光装置和第二曝光装置,其中:如图1~2所示,所述基板装置包括一基板台10和一基板7,所述基板台10承载所述基板7,所述基板7包括基板第一区域71和基板第二区域72;所述第一曝光装置和所述第二曝光装置沿所述基板7曝光方向呈对称分布,所述第一曝光装置和所述第二曝光装置分别对应所述基板第一区域71和所述基板第二区域72,所述第一曝光装置对所述基板第一区域71进行测量并根据测量结果调整所述基板台10和其自身的参数,所述第二曝光装置对所述基板第二区域72进行测量并根据测量结果调整所述基板台10和其自身的参数,所述第一曝光装置和所述第二曝光装置分别同时对所述基板第一区域71和所述基板第二区域72进行曝光。The lithographic apparatus provided in this embodiment includes two sets of exposure devices, which are respectively a first exposure device and a second exposure device, wherein: as shown in FIGS. 1 and 2, the substrate device includes a substrate stage 10 and a substrate 7. The substrate stage 10 carries the substrate 7, the substrate 7 includes a substrate first region 71 and a substrate second region 72; the first exposure device and the second exposure device are symmetric along the exposure direction of the substrate 7. Distributing, the first exposure device and the second exposure device respectively correspond to the substrate first region 71 and the substrate second region 72, and the first exposure device measures the substrate first region 71 and Adjusting the substrate table 10 and its own parameters according to the measurement result, the second exposure device measures the substrate second region 72 and adjusts the substrate table 10 and its own parameters according to the measurement result, An exposure device and the second exposure device simultaneously expose the substrate first region 71 and the substrate second region 72, respectively.
在本实施例提供的光刻装置中,通过所述第一曝光装置对所述基板第一区域71进行测量并根据测量结果调整所述基板台10和其自身的参数,所述第二曝光装置对所述基板第二区域72进行测量并根据测量结果调整所述基板台10和其自身的参数,可灵活的调节基板台10、第一曝光装置和第二曝光装置的参数,曝光时当位于曝光场内的基板7出现局部起伏和形变时,适应的分别调整第一曝光装置和第二曝光装置的参数,分别补偿各自对应的曝光场内的基板的局部起伏和形变带来的缺陷,另外,所述第一曝光装置和所述第二曝光装置分别同时对所述基板第一区域71和所述基板第二区域72进行曝光,可实现小视场的工况,满足大面积基板的工艺要求,一次曝光,工艺步骤减少,成本低。In the lithographic apparatus provided in this embodiment, the first region 71 of the substrate is measured by the first exposure device and the parameters of the substrate table 10 and itself are adjusted according to the measurement result, the second exposure device Measuring the second region 72 of the substrate and adjusting the parameters of the substrate table 10 and itself according to the measurement result, the parameters of the substrate table 10, the first exposure device and the second exposure device can be flexibly adjusted, and when the exposure is located When the substrate 7 in the exposure field is partially undulated and deformed, the parameters of the first exposure device and the second exposure device are respectively adjusted to compensate for the defects caused by the local undulation and deformation of the substrate in the corresponding exposure field, respectively. The first exposure device and the second exposure device respectively expose the substrate first region 71 and the substrate second region 72 at the same time, which can realize a small field of view operation condition and meet the process requirements of the large-area substrate. , one exposure, reduced process steps, and low cost.
具体的,在所述的光刻装置中,所述第一曝光装置包括第一照明装置11、第一掩膜版21、第一掩膜台31、第一物镜41、第一基板对准装置51、第一垂向测量传感器61和第一掩膜对准装置91,其中:所述第一掩膜台31承载所述第一掩膜版21,所述第一照明装置11位于所述第一掩膜版21的上方,所述第一物镜41位于所述第一掩膜台31的下方,所述第一基板对准装置51和所述第一垂向测量传感器61位于所述基板第一区域71的上方,所述第一基板对准装置51用于测量所述基板第一区域71相对所述基板台10的位置,所述第一垂向测量传感器61用于测量所述基板第一区域71的面形,所述第一掩膜对准装置91用于测量所述第一掩膜版21相对所述基板台10的位置。同样,本实施例中,所述第二曝光装置包括第二照明装置12、第二掩膜版22、第二掩膜台32、第二物镜42、第二基板对准装置52、第二垂向测量传感器62和第二掩膜对准装置92。Specifically, in the lithographic apparatus, the first exposure device includes a first illumination device 11, a first mask 21, a first mask table 31, a first objective lens 41, and a first substrate alignment device. 51. A first vertical measurement sensor 61 and a first mask alignment device 91, wherein: the first mask stage 31 carries the first mask 21, and the first illumination device 11 is located at the first Above the mask 21, the first objective lens 41 is located below the first mask stage 31, and the first substrate alignment device 51 and the first vertical measurement sensor 61 are located on the substrate Above a region 71, the first substrate alignment device 51 is configured to measure a position of the substrate first region 71 relative to the substrate stage 10, and the first vertical measurement sensor 61 is configured to measure the substrate The surface of a region 71 for measuring the position of the first mask 21 relative to the substrate stage 10. Similarly, in this embodiment, the second exposure device includes a second illumination device 12, a second mask 22, a second mask table 32, a second objective lens 42, a second substrate alignment device 52, and a second vertical device. The device 92 is aligned to the measurement sensor 62 and the second mask.
由此可知,本实施例中通过两套曝光装置,分别对基板上的两个区域进行曝光,满足了大面积基板和小视场工况的要求。It can be seen that in the present embodiment, two sets of exposure devices are respectively exposed to the two regions on the substrate, which satisfies the requirements of the large-area substrate and the small field of view.
另外,在所述的光刻装置中,所述基板装置还包括基准板,每套曝光装置对应至少一块基准板,所述基准板上设有基准板标记,所述基准板与基板台10之间的位置关系是固定的。本实施例中所述基准板包括第一基准板81、第二基准板82和第三基准板83,第一基准板81、第二基准板82和第三基准板83上均包括两个基准板标记,基准板标记的结构可以采用现有技术中常用的结构,在此不作特别限定。优选的,第一至第三基准板81~83上的基准板标记采用相同的结构。所述第一基板对准装置51测量所述第一基准板81上的基准标记,所述第二基板对准装置52测量所述第二基准板82上的基准板标记,以分别获得所述第一基板对准装置51、所述第二基板对准装置52相对所述基板台10的位置。In addition, in the lithographic apparatus, the substrate device further includes a reference plate, each set of exposure devices corresponding to at least one reference plate, the reference plate is provided with a reference plate mark, and the reference plate and the substrate table 10 The positional relationship between the two is fixed. The reference plate in this embodiment includes a first reference plate 81, a second reference plate 82, and a third reference plate 83. The first reference plate 81, the second reference plate 82, and the third reference plate 83 each include two references. The structure of the board mark and the reference board mark may be a structure commonly used in the prior art, and is not particularly limited herein. Preferably, the reference plate marks on the first to third reference plates 81 to 83 have the same structure. The first substrate alignment device 51 measures a fiducial mark on the first reference plate 81, and the second substrate alignment device 52 measures a reference plate mark on the second reference plate 82 to obtain the The position of the first substrate alignment device 51 and the second substrate alignment device 52 with respect to the substrate stage 10.
所述第三基准板83为测校基准板,所述第三基准板83上的所述基准板标记用于测量第一基板对准装置51和所述第二基板对准装置52的相对位置。第一基板对准装置51通过测量第一基准板81和第三基准板83上的基准板标记的位置来标记自身的位置,第二基板对准装置52通过测量第二基准板82和第三基准板83上的基准板标记的位置标记自身的位置,由于两者都与第三基准板83上的基准板标记有位置关系,所以两者的相对位置可获得。The third reference plate 83 is a calibration reference plate, and the reference plate mark on the third reference plate 83 is used to measure the relative positions of the first substrate alignment device 51 and the second substrate alignment device 52. . The first substrate aligning device 51 marks its position by measuring the position of the reference plate mark on the first reference plate 81 and the third reference plate 83, and the second substrate aligning device 52 measures the second reference plate 82 and the third The position of the reference mark on the reference plate 83 marks the position of itself, and since both have a positional relationship with the reference mark on the third reference plate 83, the relative positions of the two are available.
结合图1和图2可知,第一至第三基准板81~83的位置靠近基板台10的一侧边缘且处于基板7放置位置以外的区域。所述第一基准板81和所述第二基准板82分别对应于所述基板第一区域71和所述基板第二区域72,所述第三基准板83对应于所述基板第一区域71和所述基板第二区域72的中间位置,即第三基准板83位于所述第一基准板81和所述第二基准板82之间,通过定期测量所述第三基准板83上的基准板标记,可实现对第一基板对准装置51、所述第二基板对准装置52相对所述基板台10位置的校准。1 and 2, the positions of the first to third reference plates 81 to 83 are close to one side edge of the substrate stage 10 and are outside the position where the substrate 7 is placed. The first reference plate 81 and the second reference plate 82 respectively correspond to the substrate first region 71 and the substrate second region 72, and the third reference plate 83 corresponds to the substrate first region 71. An intermediate position with the second region 72 of the substrate, that is, a third reference plate 83 is located between the first reference plate 81 and the second reference plate 82, and the reference on the third reference plate 83 is periodically measured. The board mark enables alignment of the position of the first substrate alignment device 51 and the second substrate alignment device 52 with respect to the substrate stage 10.
所述第一掩膜对准装置91设置在所述第一基准板81下方,用于测量所述第一掩膜版21上掩膜标记相对所述第一基准板81上基准板标记的位置,进而获得所述第一掩膜版21相对所述基板台10的位置,所述第二掩膜对准装置92设置在所述第二基准板82下方,用于测量所述第二掩膜版22上掩膜标记相对所述第二基准板82上基准板标记的位置,进而获得所述第二掩膜版22相对所述基板台10的位置,如图2所示。本领域技术人员应当知晓,所述掩膜标记的结构应当与基准板标记的结构相匹配,以实现对准。由于对准标记的设计为现有技术,在此不一一列举。The first mask alignment device 91 is disposed under the first reference plate 81 for measuring the position of the mask mark on the first mask 21 relative to the reference mark on the first reference plate 81. And obtaining a position of the first mask 21 relative to the substrate stage 10, the second mask alignment device 92 being disposed under the second reference plate 82 for measuring the second mask The position of the mask mark on the plate 22 relative to the reference mark on the second reference plate 82, thereby obtaining the position of the second mask 22 relative to the substrate stage 10, as shown in FIG. Those skilled in the art will appreciate that the structure of the mask mark should match the structure of the reference plate mark to achieve alignment. Since the design of the alignment marks is prior art, it is not enumerated here.
进一步的,如图3所示,在所述的光刻装置中,所述基板7还包括多个基板对准标记,第一行对应A1~A8,第二行对应B1~B8,第三行对应C1~C8,以此类推D1~D8、E1~E8、F1~F8和G1~G8,为了图式简洁清晰,图中只标 出了A1~A8以及B1~G1,其余各点位置可以类推获得。所述第一基板对准装置51测量所述基板第一区域71上的基板对准标记,所述第二基板对准装置52测量所述基板第二区域72上的基板对准标记,计算所述基板第一区域71、基板第二区域72相对于第一基准板81、第二基准板82的位置关系,进而获得所述基板7相对所述基板台10的位置关系。Further, as shown in FIG. 3, in the lithographic apparatus, the substrate 7 further includes a plurality of substrate alignment marks, the first row corresponds to A1 to A8, and the second row corresponds to B1 to B8, and the third row Corresponding to C1 ~ C8, and so on D1 ~ D8, E1 ~ E8, F1 ~ F8 and G1 ~ G8, for the sake of simplicity and clarity, only A1 ~ A8 and B1 ~ G1 are marked in the figure, the other points can be analogized obtain. The first substrate alignment device 51 measures a substrate alignment mark on the first region 71 of the substrate, and the second substrate alignment device 52 measures a substrate alignment mark on the second region 72 of the substrate, The positional relationship between the first region 71 of the substrate and the second region 72 of the substrate with respect to the first reference plate 81 and the second reference plate 82 is further obtained, and the positional relationship of the substrate 7 with respect to the substrate stage 10 is obtained.
综上,上述实施例对光刻装置的构型进行了详细说明,当然,本发明包括但不局限于上述实施例中所列举的构型,任何在上述实施例提供的构型基础上进行变换的内容,均属于本发明所保护的范围。本领域技术人员可以根据上述实施例的内容举一反三。In summary, the above embodiments describe the configuration of the lithographic apparatus in detail. Of course, the present invention includes, but is not limited to, the configurations listed in the above embodiments, and any transformation is performed on the basis of the configuration provided by the above embodiments. The contents are all within the scope of protection of the present invention. Those skilled in the art can make the same according to the content of the above embodiments.
本实施例还提供一种光刻方法,包括:This embodiment further provides a photolithography method, including:
步骤1、将基板7放置于基板台10上;将第一曝光装置和第二曝光装置沿所述基板7曝光方向呈对称分布设置,使所述第一曝光装置和所述第二曝光装置分别对应所述基板第一区域71和基板第二区域72;Step 1, the substrate 7 is placed on the substrate stage 10; the first exposure device and the second exposure device are symmetrically distributed along the exposure direction of the substrate 7, so that the first exposure device and the second exposure device are respectively Corresponding to the substrate first region 71 and the substrate second region 72;
步骤2、所述第一曝光装置的第一垂向测量传感器61对所述基板第一区域71进行测量,所述第二曝光装置的第二垂向测量传感器62对所述基板第二区域72进行测量,并将所有测量点的位置(x
i,y
i,z
i)代入平面拟合模型z
i=wz-wwy·x
i+wwx·y
i,拟合得到所述基板7的全局拟合面,其中wz为所述全局拟合面高度值(即Z向值),wwx为所述全局拟合面关于X轴的倾斜值,wwy为所述全局拟合面关于Y轴的倾斜值,再根据所述基板7的全局拟合面与基板对准最佳焦面之间的差值确定所述基板的全局调平调整量,根据所述基板的全局调平调整量执行所述基板7的全局调平,使得全局调平后的基板7的表面基本与基板对准最佳焦面重合;
Step 2: The first vertical measuring sensor 61 of the first exposure device measures the first region 71 of the substrate, and the second vertical measuring sensor 62 of the second exposure device faces the second region 72 of the substrate. The measurement is performed, and the positions (x i , y i , z i ) of all the measurement points are substituted into the plane fitting model z i =wz-wwy·x i +wwx·y i , and the global simulation of the substrate 7 is obtained by fitting. a face, where wz is the global fit face height value (ie, a Z-direction value), wwx is a tilt value of the global fit face with respect to the X-axis, and wwy is a tilt value of the global fit face with respect to the Y-axis And determining, according to a difference between the global fitting surface of the substrate 7 and the optimal focal plane of the substrate, determining a global leveling adjustment amount of the substrate, and performing the substrate according to a global leveling adjustment amount of the substrate The global leveling of 7 is such that the surface of the globally leveled substrate 7 substantially coincides with the alignment of the substrate with the best focal plane;
进一步地,所述基板对准最佳焦面为所述第一曝光装置和所述第二曝光装置中物镜41、42的参考焦面的平均值。Further, the substrate is aligned with the optimal focal plane as an average of the reference focal planes of the objective lenses 41, 42 in the first exposure device and the second exposure device.
步骤3、所述第一曝光装置的第一基板对准装置51和所述第二曝光装置的第二基板对准装置52同时执行基板对准,获得所述基板7与所述基板台10之间的位置关系,并根据所述基板7与所述基板台10之间的位置关系计算所述基板7的上板误差;Step 3: The first substrate alignment device 51 of the first exposure device and the second substrate alignment device 52 of the second exposure device simultaneously perform substrate alignment to obtain the substrate 7 and the substrate table 10 a positional relationship between the two, and calculating an upper plate error of the substrate 7 according to a positional relationship between the substrate 7 and the substrate stage 10;
所述步骤3可具体包括:控制所述基板台10沿着扫描方向运动,同时所述第一基板对准装置51测量所述基板第一区域71的基板对准标记的位置,所述第二基板对准装置52测量所述基板第二区域72的基板对准标记的位置;The step 3 may specifically include: controlling the substrate stage 10 to move along a scanning direction, and the first substrate alignment device 51 measures a position of the substrate alignment mark of the first region 71 of the substrate, the second The substrate alignment device 52 measures the position of the substrate alignment mark of the second region 72 of the substrate;
将所述基板第一区域71的基板对准标记的测量位置和名义位置代入下述式1计算所述基板第一区域71相对所述基板台10的偏移量(Rz_L,Cx_L,Cy_L),将所述基板第二区域72的基板对准标记的测量位置和名义位置代入下述式1计算所述基板第二区域72相对所述基板台10的偏移量(Rz_R,Cx_R,Cy_R),其中,Rz_L为所述基板第一区域71(图中左侧区域)相对所述基板台10的绕Z轴的旋转量,Cx_L、Cy_L分别为所述基板第一区域71相对所述基板台10的X、Y向平移量,Rz_R为所述基板第二区域72(图中右侧区域)相对所述基板台10的绕Z轴的旋转量,Cx_R、Cy_R分别为所述基板第二区域72相对所述基板台10的X、Y向平移量。Calculating the offset amount (Rz_L, Cx_L, Cy_L) of the substrate first region 71 with respect to the substrate stage 10 by substituting the measurement position and the nominal position of the substrate alignment mark of the substrate first region 71 into the following formula 1 Substituting the measured position and the nominal position of the substrate alignment mark of the second region 72 of the substrate into the following formula 1 to calculate the offset amount (Rz_R, Cx_R, Cy_R) of the substrate second region 72 with respect to the substrate stage 10, Wherein, Rz_L is a rotation amount of the first region 71 (the left region in the drawing) of the substrate relative to the substrate axis 10 about the Z axis, and Cx_L and Cy_L are the substrate first region 71 opposite to the substrate substrate 10, respectively. The X, Y-direction shift amount, Rz_R is the amount of rotation of the substrate second region 72 (the right region in the drawing) with respect to the substrate table 10 about the Z-axis, and Cx_R and Cy_R are the substrate second region 72, respectively. The amount of shift in the X and Y directions with respect to the substrate stage 10.
其中,(X
i,Y
i)为所述基板对准标记的名义位置,dx
i、dy
i分别为所述基板对准标记的X、Y向位置偏差,即所述基板对准标记的测量位置(步骤1中测得的x
i)和名义位置X
i的差值,Mx为基板的X向倍率,My为所述基板的Y向倍率,non_ortho为所述基板的非正交量。计算基板第一区域71相对所述基板台10的偏移量时,将基板第一区域71内的基板对准标记的测量位置和名义位置以及第一物镜41的倍率值代入式1,求得的Rz,Cx,Cy即为Rz_L,Cx_L,Cy_L。同理,计算基板第二区域72相对所述基板台10的偏移量时,将基板 第二区域72内的基板对准标记的测量位置和名义位置以及第二物镜41的倍率值代入式1,求得的Rz,Cx,Cy即为Rz_R,Cx_R,Cy_R。
Wherein (X i , Y i ) is the nominal position of the substrate alignment mark, and dx i , dy i are respectively the X, Y-direction positional deviation of the substrate alignment mark, that is, the measurement of the substrate alignment mark The difference between the position (x i measured in step 1) and the nominal position X i , Mx is the X-direction magnification of the substrate, My is the Y-direction magnification of the substrate, and non_ortho is the non-orthogonal amount of the substrate. When calculating the offset amount of the first region 71 of the substrate relative to the substrate stage 10, the measurement position and the nominal position of the substrate alignment mark in the first region 71 of the substrate and the magnification value of the first objective lens 41 are substituted into Equation 1, and obtained. Rz, Cx, and Cy are Rz_L, Cx_L, and Cy_L. Similarly, when calculating the offset of the second region 72 of the substrate relative to the substrate stage 10, the measurement position and the nominal position of the substrate alignment mark in the second region 72 of the substrate and the magnification value of the second objective lens 41 are substituted into Equation 1. The obtained Rz, Cx, and Cy are Rz_R, Cx_R, and Cy_R.
所述步骤3中还包括所述第一曝光装置的第一掩膜对准装置91和所述第二曝光装置的第二掩膜对准装置92同时执行掩膜对准,分别获得所述第一曝光装置的第一掩膜版21与基板台10之间的位置关系以及所述第二曝光装置的第二掩膜版22与基板台10之间的位置关系。The step 3 further includes simultaneously performing mask alignment on the first mask alignment device 91 of the first exposure device and the second mask alignment device 92 of the second exposure device, respectively obtaining the The positional relationship between the first mask 21 of the exposure apparatus and the substrate stage 10 and the positional relationship between the second mask 22 of the second exposure apparatus and the substrate stage 10.
步骤4、控制所述基板台10、第一掩膜台31及第二掩膜台32运动,以补偿所述基板7的上板误差,具体为:Step 4: Control the movement of the substrate stage 10, the first mask stage 31 and the second mask stage 32 to compensate for the upper board error of the substrate 7, specifically:
先根据以下公式计算所述基板台10的绕Z轴的旋转调整量dRz、X向平移调整量dCx及X向平移调整量dCy,控制所述基板台10根据计算得到的调整量运动,补偿所述基板第一区域71与所述基板第二区域72相对所述基板台10的偏移量的公共部分:First, the rotation adjustment amount dRz, the X-direction translation adjustment amount dCx, and the X-direction translation adjustment amount dCy of the substrate stage 10 around the Z-axis are calculated according to the following formula, and the substrate table 10 is controlled to move according to the calculated adjustment amount, and the compensation center is compensated. a common portion of the substrate first region 71 and the substrate second region 72 offset from the substrate table 10:
再根据以下公式分别计算所述基板第一区域71对应的第一掩膜台31的绕Z轴的旋转调整量RS.Rz_L、X向平移调整量RS.Cx_L及X向平移调整量RS.Cy_L,和所述基板第二区域72对应的第二掩膜台32的绕Z轴的旋转调整量RS.Rz_R、X向平移调整量RS.Cx_R及X向平移调整量RS.Cy_R,控制所述第一掩膜台31和所述第二掩膜台32根据相应的调整量运动,分别补偿所述基板第一区域71与所述基板第二区域72相对所述基板台10的偏移量的余量部分:Further, according to the following formula, the rotation adjustment amount RS.Rz_L, the X-direction translation adjustment amount RS.Cx_L, and the X-direction translation adjustment amount RS.Cy_L of the first mask stage 31 corresponding to the first mask stage 31 of the substrate are respectively calculated. Controlling the rotation adjustment amount RS.Rz_R, the X-direction translation adjustment amount RS.Cx_R, and the X-direction translation adjustment amount RS.Cy_R of the second mask stage 32 corresponding to the second region 72 of the substrate The first mask stage 31 and the second mask stage 32 respectively compensate for the offset of the substrate first region 71 and the substrate second region 72 relative to the substrate stage 10 according to the corresponding adjustment amount. The margin part:
也就是说,在步骤4中,对于基板第一区域71与所述基板第二区域72相对所述基板台10的公共误差,是通过调整基板台10的位置来进行补偿,而对于基板第一区域71与所述基板第二区域72相对所述基板台10的非公共误差,是通过调整各自的掩膜台位置来实现补偿。That is, in step 4, the common error for the substrate first region 71 and the substrate second region 72 with respect to the substrate stage 10 is compensated by adjusting the position of the substrate stage 10, and for the substrate first The non-common error of the region 71 and the substrate second region 72 with respect to the substrate stage 10 is compensated by adjusting the respective mask stage positions.
步骤5、在扫描曝光每个曝光场时,所述第一曝光装置的垂向测量传感器61实时测量曝光场内的基板第一区域71的局部面形(即基板第一区域71位于曝光场中的部分的面形),并控制所述第一掩膜台31根据测量得到的基板第一区域局部面形进行运动,以使第一曝光装置的最佳焦面与所述基板第一区域上的曝光场基本重合。同时,所述第二曝光装置的垂向测量传感器62实时测量曝光场内的基板第二区域72的局部面形(即基板第二区域72位于曝光场中的部分的面形),并控制所述第二掩膜台31根据测量得到的基板第二区域局部面形进行运动,以使第二曝光装置的最佳焦面与所述基板第二区域上的曝光场基本重合。Step 5: When scanning each exposure field, the vertical measuring sensor 61 of the first exposure device measures the partial shape of the first region 71 of the substrate in the exposure field in real time (ie, the first region 71 of the substrate is located in the exposure field) And controlling the first mask table 31 to move according to the measured partial shape of the first region of the substrate, so as to optimize the focal plane of the first exposure device and the first region of the substrate The exposure fields are basically coincident. At the same time, the vertical measuring sensor 62 of the second exposure device measures the partial shape of the second region 72 of the substrate in the exposure field in real time (ie, the surface shape of the portion of the substrate second region 72 located in the exposure field), and controls the The second mask stage 31 moves according to the measured partial shape of the second region of the substrate, so that the optimal focal plane of the second exposure device substantially coincides with the exposure field on the second region of the substrate.
下述以控制所述第一掩膜台31运动补偿所述基板第一区域上曝光场的局部面形中的Z向高度和Rx、Ry向倾斜为例进行说明:The following describes an example of controlling the Z-direction height and the Rx and Ry inclination in the partial shape of the exposure field on the first region of the substrate by controlling the movement of the first mask stage 31:
所述第一掩膜台31运动补偿所述基板第一区域上曝光场的Z向高度包括:The movement of the first mask stage 31 to compensate the Z-direction height of the exposure field on the first area of the substrate comprises:
S1:在每个曝光场曝光起点,将所述第一掩膜台31的Z向运动值RS.Z
set_i设定为
S1: at each exposure field exposure starting point, setting the Z-direction motion value RS.Z set_i of the first mask stage 31 to
S2:扫描过程中,将所述第一掩膜台31的Z向运动值RS.Z
set_i设定为
S2: setting a Z-direction motion value RS.Z set_i of the first mask stage 31 to
其中为RS.Z
ref_i为扫描曝光时所述第一掩膜台31沿参考物面运动的Z向设定值,FLS.Z
i为所述垂向测量传感器61在当前采样周期内测得的Z向高度值,FLS.Z
i-1为所述垂向测量传感器61在上一采样周期内测得的Z向高度值,BF_Die.Z为曝光的最佳焦面的Z向高度值,N为第一物镜41的倍率,WSF为滤波参数。此处,滤波过程例如可以采用低通滤波,目的是解决掩膜台伺服带宽不够的问题。关于不同滤波过程的选择以及相应滤波参数WSF的设定均为业界已知,故不具体展开。
Wherein RS.Z ref_i is a Z-direction set value of the first mask stage 31 moving along the reference object plane during scanning exposure, and FLS.Z i is measured by the vertical measuring sensor 61 during the current sampling period. The Z-direction height value, FLS.Z i-1 is the Z-direction height value measured by the vertical measurement sensor 61 in the previous sampling period, and BF_Die.Z is the Z-direction height value of the optimal focal plane of the exposure, N For the magnification of the first objective lens 41, WSF is a filter parameter. Here, the filtering process can be, for example, low-pass filtering, in order to solve the problem that the masking station has insufficient servo bandwidth. The selection of the different filtering processes and the setting of the corresponding filtering parameters WSF are known in the industry and are not specifically developed.
通过所述第一掩膜台31的运动补偿所述基板上曝光场的Rx向倾斜值RS.Rx
set_i包括:
Compensating for the Rx tilt value RS.Rx set_i of the exposure field on the substrate by the motion of the first mask stage 31 includes:
K1:在每个曝光场曝光起点,所述第一掩膜台31的Rx向倾斜值RS.Rx
set_i设定为
K1: at each exposure field exposure starting point, the Rx tilting value RS.Rx set_i of the first mask stage 31 is set to
K2:扫描过程中,所述第一掩膜台31的Rx向倾斜值RS.Rx
set_i设定为
K2: during the scanning process, the Rx of the first mask stage 31 is set to the tilt value RS.Rx set_i to
其中RS.Rx
ref_i为扫描曝光时所述掩模台沿参考物面运动的Rx向倾斜设定值,FLS.Rx
i为所述垂向测量传感器在当前采样周期内测得的Rx向倾斜值,FLS.Rx
i-1为所述垂向测量传感器在上一采样周期内测得的Rx向倾斜值,BF_Die.Rx为所述曝光的最佳焦面的Rx向倾斜值。
Where RS.Rx ref_i is the Rx tilt setting value of the mask table moving along the reference object plane during scanning exposure, and FLS.Rx i is the Rx tilt value measured by the vertical measuring sensor in the current sampling period. FLS.Rx i-1 is the Rx tilt value measured by the vertical measuring sensor during the last sampling period, and BF_Die.Rx is the Rx tilt value of the optimal focal plane of the exposure.
所述第一掩膜台31运动补偿所述基板上曝光场的Ry向倾斜值的方法与所述第一掩膜台31运动补偿所述基板上曝光场的Rx向倾斜值的方法类似。具体的,通过所述第一掩膜台31的运动补偿所述基板上曝光场的Ry向倾斜值RS.Ry
set_i包括:
The method of the first mask stage 31 moving to compensate for the Ry tilt value of the exposure field on the substrate is similar to the method of the first mask stage 31 moving to compensate the Rx tilt value of the exposure field on the substrate. Specifically, the Ry-direction tilt value RS.Ry set_i of the exposure field on the substrate is compensated by the motion of the first mask stage 31 to include:
K1':在每个曝光场曝光起点,所述第一掩膜台31的Ry向倾斜值RS.Ry
set_i设定为
K1': at each exposure field exposure starting point, the Ry of the first mask stage 31 is set to the tilt value RS.Ry set_i to
K2':扫描过程中,所述第一掩膜台31的Ry向倾斜值RS.Ry
set_i设定为
K2': during the scanning, the Ry of the first mask stage 31 is set to the tilt value RS.Ry set_i as
其中RS.Ry
ref_i为扫描曝光时所述掩模台沿参考物面运动的Ry向倾斜设定值,FLS.Ry
i为所述垂向测量传感器在当前采样周期内测得的Ry向倾斜值,FLS.Ry
i-1为所述垂向测量传感器在上一采样周期内测得的Ry向倾斜值,BF_Die.Ry为所述曝光的最佳焦面的Ry向倾斜值。
Where RS.Ry ref_i is a Ry tilt setting value of the mask table moving along the reference object plane during scanning exposure, and FLS.Ry i is a Ry tilt value measured by the vertical measuring sensor during the current sampling period. FLS.Ry i-1 is the Ry tilt value measured by the vertical measuring sensor in the previous sampling period, and BF_Die.Ry is the Ry tilt value of the optimal focal plane of the exposure.
控制所述第二掩膜台32的方式与控制所述第一掩膜台31的方式一致,在此不再赘述。The manner of controlling the second mask stage 32 is the same as the manner of controlling the first mask stage 31, and details are not described herein again.
关于掩膜垂向控制的更详细的介绍也可参考发明人的另一件中国专利申请201710154051.3“一种用于光刻机的垂向控制方法”,其全部内容通过引用并入本文。For a more detailed description of the vertical control of the mask, reference is also made to the inventor's other Chinese patent application No. 201710154051.3 "a vertical control method for a lithography machine", which is incorporated herein by reference in its entirety.
实施例二Embodiment 2
本实施例与实施例一的区别在于,在步骤4中补偿所述基板7的上板误差的方法不同,本实施例仅控制所述第一掩膜台31及第二掩膜台32运动以补偿所述基板第一区域71与所述基板第二区域72相对所述基板台10的偏移量,具体为:The difference between this embodiment and the first embodiment is that the method for compensating the upper board error of the substrate 7 in step 4 is different. The embodiment only controls the movement of the first mask stage 31 and the second mask stage 32. Compensating for the offset between the first region 71 of the substrate and the second region 72 of the substrate relative to the substrate substrate 10, specifically:
计算第一掩膜台31的绕Z轴的旋转调整量RS.Rz_L、X向平移调整量RS.Cx_L及Y向平移调整量RS.Cy_L,和所述第二掩膜台32的绕Z轴的旋转调整量RS.Rz_R、X向平移调整量RS.Cx_R及Y向平移调整量RS.Cy_R,控制所述第一掩膜台31和所述第二掩膜台32根据相应的调整量运动,分别补偿所述基板第一区域71与所述基板第二区域72相对所述基板台10的偏移量:Calculating a rotation adjustment amount RS.Rz_L about the Z-axis of the first mask stage 31, an X-direction translation adjustment amount RS.Cx_L, and a Y-direction translation adjustment amount RS.Cy_L, and a Z-axis of the second mask stage 32 The rotation adjustment amount RS.Rz_R, the X-direction translation adjustment amount RS.Cx_R, and the Y-direction translation adjustment amount RS.Cy_R, controlling the first mask stage 31 and the second mask stage 32 to move according to the corresponding adjustment amount And offsetting the offset between the first region 71 of the substrate and the second region 72 of the substrate relative to the substrate stage 10:
RS.Rz_L=-Rz_L;RS.Rz_L=-Rz_L;
RS.Cx_L=-Cx_L;RS.Cx_L=-Cx_L;
RS.Cy_L=-Cy_L;RS.Cy_L=-Cy_L;
RS.Rz_R=-Rz_R;RS.Rz_R=-Rz_R;
RS.Cx_R=-Cx_R;RS.Cx_R=-Cx_R;
RS.Cy_R=-Cy_R。RS.Cy_R=-Cy_R.
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。The above description is only for the description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes and modifications made by those skilled in the art in light of the above disclosure are all within the scope of the appended claims.