WO2018145745A1 - Optoelectronic semiconductor component - Google Patents
Optoelectronic semiconductor component Download PDFInfo
- Publication number
- WO2018145745A1 WO2018145745A1 PCT/EP2017/052814 EP2017052814W WO2018145745A1 WO 2018145745 A1 WO2018145745 A1 WO 2018145745A1 EP 2017052814 W EP2017052814 W EP 2017052814W WO 2018145745 A1 WO2018145745 A1 WO 2018145745A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optoelectronic semiconductor
- potting material
- semiconductor chip
- cavity
- semiconductor component
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Definitions
- the present invention relates to an optoelectronic semicon ⁇ ductor component.
- Optoelectronic semiconductor components comprising a housing body with a cavity and an optoelectronic semiconductor chip arranged in that cavity are known in the state of the art. It is known to arrange a reflective potting material in the cav ⁇ ity.
- An optoelectronic semiconductor component comprises a housing body having a cavity.
- a potting material is arranged in the cavity.
- the potting material comprises embedded particles, the particles comprising aluminium.
- a potting material with embedded particles which comprise aluminium can provide a high reflectivity in a broad spectral range.
- a potting material with embedded particles which comprise aluminium can provide high reflectivity in the blue and ultraviolet spectral range.
- the potting material arranged in the cavity of the housing body of this optoelectronic semiconductor component can provide a high reflectivity.
- an optoelectronic semiconductor chip is arranged in the cavity.
- the optoelectronic semiconductor chip is at least partially embedded in the potting material.
- a light-emitting face of the optoelectronic semiconductor chip is not covered by the potting material.
- the potting material can reflect light which is emitted by the optoelectronic sem ⁇ iconductor chip into an undesired direction.
- the potting material can also reflect light which is emitted by the optoe- lectronic semiconductor chip and scattered back to the optoe ⁇ lectronic semiconductor component.
- this may reduce light loss and may increase the efficiency of the op ⁇ toelectronic semiconductor component.
- the optoelectronic semiconductor chip is a light emit ⁇ ting diode chip.
- light emitted by the light emitting diode chip in an undesired direction or at an undesired angel can be reflected by the potting material of this optoelectronic semiconductor component to make at least parts of this light useable.
- the optoelectronic semiconductor chip is designed for emitting light from the ultraviolet spectral range.
- the potting material with embedded particles which comprise aluminium may provide a high reflectivity for light from the ultraviolet spectral range.
- the potting material comprises silicone.
- silicone is cost-efficient, allows for an easy processing and provides high durability.
- the particles comprise an average particles size be ⁇ tween 0.5 ym and 50 ym, in particular between 1 ym and 10 ym.
- a potting material with embedded particles comprising an average particles size from this range provides high homogeneity and low granularity. Furthermore, particles comprising an average particle size from this range can be easily and cost-efficiently manufactured.
- Figure 1 shows a schematic sectional view of an optoelectron ⁇ ic semiconductor component.
- Figure 1 shows a sectional drawing of an optoelectronic semi ⁇ conductor component 10 in schematic depiction.
- the optoelec ⁇ tronic semiconductor component 10 is designed for emitting light.
- the optoelectronic semiconductor component 10 may, for example, be designed for emitting light comprising a wave ⁇ length in the ultraviolet (UV) spectral range.
- UV ultraviolet
- the optoelectronic semiconductor component 10 comprises a housing body 100.
- the housing body 100 may, for example, com- prise a plastic material or a ceramic material.
- the housing body 10 can, for example, be produced by a molding process.
- the housing body 100 has a cavity 110.
- the cavity 110 com ⁇ prises a bottom 120 and sidewalls 130.
- the sidewalls 130 may be arranged perpendicular to the bottom 120 as depicted in figure 1.
- the sidewalls 130 may also be inclined such that the cavity 110 widens from the bottom 120 of the cavity 110 towards an opening of the cavity 110.
- the sidewalls 130 may also be curved or comprise another shape.
- the optoelectronic semiconductor component 10 comprises an optoelectronic semiconductor chip 300.
- the optoelectronic semiconductor chip 300 is designed for emitting light.
- the optoelectronic semiconductor chip 300 may, for example, be designed for emitting light in the ultraviolet (UV) spectral range.
- the optoelectronic semiconductor chip 300 may, for ex ⁇ ample, be a light emitting diode chip.
- the optoelectronic semiconductor chip 300 comprises an upper side 310 and a lower side 320 which is opposed to the upper side 310. Side faces 330 of the optoelectronic semiconductor chip 300 extend between the upper side 310 and the lower side 320 of the optoelectronic semiconductor chip 300.
- the upper side 310 of the optoelectronic semiconductor chip 300 is a light-emitting face 315 of the optoelectronic semi ⁇ conductor chip 300.
- the optoelectronic semi- conductor chip 300 emits light at the upper side 310 of the optoelectronic semiconductor chip 300.
- the optoelectronic semiconductor chip 300 comprises two or more electric contact areas for providing an electric voltage and electric current to the optoelectronic semiconductor chip 300.
- the electric contact areas may be arranged on the upper side 310 or on the lower side 320 of the optoelectronic semi ⁇ conductor chip 300. All electric contact pads of the optoe ⁇ lectronic semiconductor chip 300 may be arranged on the same side 310, 320 of the optoelectronic semiconductor chip 300 or on different sides 310, 320 of the optoelectronic semiconduc ⁇ tor chip 300.
- the optoelectronic semiconductor chip 300 is arranged in the cavity 110 of the housing body 100 of the optoelectronic sem ⁇ iconductor component 10.
- the optoelectronic semiconductor chip 300 is arranged at the bottom 120 of the cavity 110 such that the lower side 320 of the optoelectronic semiconductor chip 300 faces the bottom 120 of the cavity 110.
- the optoe- lectronic semiconductor chip 300 may be a fixed to the bottom 120 of the cavity 110, for example by means of a solder or glue .
- the electric contact areas of the optoelectronic semiconduc- tor chip 300 are electrically connected to electric contact pads of the housing body 100. These electric connections may, for example, be provided via bond wire or via solder connec ⁇ tions .
- a potting material 200 is arranged in the cavity 110 of the housing body 100 of the optoelectronic semiconductor compo- nent 10. The potting material 200 fills at least parts of the remaining space of the cavity 110 such that the optoelectron ⁇ ic semiconductor chip 300 is at least partially embedded in the potting material 200. The potting material 200 covers at least parts of the side faces 330 of the optoelectronic semiconductor chip 300.
- the side faces 330 of the optoelectronic sem ⁇ iconductor chip 300 are covered completely or almost com ⁇ pletely.
- the light-emitting face 315 formed at the upper side 310 of the optoelectronic semiconductor chip 300 is not cov ⁇ ered by the potting material 200.
- the potting material 200 fills the cavity 110 from the bottom 120 of the cavity 110 up to the upper side 310 of the optoelec ⁇ tronic semiconductor chip 300 such that the upper side 310 of the optoelectronic semiconductor chip 300 and the upper side of the potting material 200 arranged in the cavity 110 are flush .
- the potting material 200 comprises a silicone 210 and parti- cles 220 embedded in the silicone 210.
- the silicone 210 is filled with the particles 220.
- the potting material 200 may also comprise another matrix material instead of or in addi ⁇ tion to the silicone 210.
- the particles 210 comprise aluminium.
- alumin ⁇ ium is highly reflective in a broad spectral range, in par ⁇ ticular in the ultraviolet spectral range. Consequently, the potting material 200 comprises a high reflectivity for light emitted by the optoelectronic semiconductor chip 300 of the optoelectronic semiconductor component 10.
- the particles 120 of the potting material 200 may, for exam ⁇ ple, comprise spherical shapes or the shape of flakes.
- Spher- ical particles can, for example, be produced by atomization.
- Particles comprising flake shapes may, for example, be pro ⁇ quizd in a milling process.
- the particles 220 of the potting material 200 may, for exam ⁇ ple, comprise an average particle size 230 between 0.5 ym and 50 ym.
- the particles 220 may, for example, comprise an average particle size 230 between 1 ym and 10 ym.
- the average particle size 230 may, for example, be 5 ym.
- the average particles size 230 may, for example, be a D 5 o value of the sizes of the particles 220.
Abstract
An optoelectronic semiconductor component comprises a housing body having a cavity. A potting material is arranged in the cavity. The potting material comprises embedded particles. The particles comprise aluminium.
Description
OPTOELECTRONIC SEMICONDUCTOR COMPONENT
DESCRIPTION The present invention relates to an optoelectronic semicon¬ ductor component.
Optoelectronic semiconductor components comprising a housing body with a cavity and an optoelectronic semiconductor chip arranged in that cavity are known in the state of the art. It is known to arrange a reflective potting material in the cav¬ ity.
It is an object of the present invention to provide an optoe- lectronic semiconductor component. This objective is achieved by an optoelectronic semiconductor component according to claim 1. Various embodiments are disclosed in the dependent claims . An optoelectronic semiconductor component comprises a housing body having a cavity. A potting material is arranged in the cavity. The potting material comprises embedded particles, the particles comprising aluminium. Advantageously, a potting material with embedded particles which comprise aluminium can provide a high reflectivity in a broad spectral range. In particular, a potting material with embedded particles which comprise aluminium can provide high reflectivity in the blue and ultraviolet spectral range. Con- sequently, the potting material arranged in the cavity of the housing body of this optoelectronic semiconductor component can provide a high reflectivity.
In an embodiment of the optoelectronic semiconductor compo- nent, an optoelectronic semiconductor chip is arranged in the cavity. The optoelectronic semiconductor chip is at least partially embedded in the potting material. A light-emitting face of the optoelectronic semiconductor chip is not covered
by the potting material. Advantageously, the potting material can reflect light which is emitted by the optoelectronic sem¬ iconductor chip into an undesired direction. The potting material can also reflect light which is emitted by the optoe- lectronic semiconductor chip and scattered back to the optoe¬ lectronic semiconductor component. Advantageously, this may reduce light loss and may increase the efficiency of the op¬ toelectronic semiconductor component. In an embodiment of the optoelectronic semiconductor compo¬ nent, the optoelectronic semiconductor chip is a light emit¬ ting diode chip. Advantageously, light emitted by the light emitting diode chip in an undesired direction or at an undesired angel can be reflected by the potting material of this optoelectronic semiconductor component to make at least parts of this light useable.
In an embodiment of the optoelectronic semiconductor compo¬ nent, the optoelectronic semiconductor chip is designed for emitting light from the ultraviolet spectral range. Advanta¬ geously, the potting material with embedded particles which comprise aluminium may provide a high reflectivity for light from the ultraviolet spectral range. In an embodiment of the optoelectronic semiconductor compo¬ nent, the potting material comprises silicone. Advantageous¬ ly, silicone is cost-efficient, allows for an easy processing and provides high durability. In an embodiment of the optoelectronic semiconductor compo¬ nent, the particles comprise an average particles size be¬ tween 0.5 ym and 50 ym, in particular between 1 ym and 10 ym. Advantageously, a potting material with embedded particles comprising an average particles size from this range provides high homogeneity and low granularity. Furthermore, particles comprising an average particle size from this range can be easily and cost-efficiently manufactured.
The above-described properties, features and advantages of this invention and the way in which they are achieved will become clearer and more clearly understood in association with the following description of the exemplary embodiments which are explained in greater detail in association with the drawing :
Figure 1 shows a schematic sectional view of an optoelectron¬ ic semiconductor component.
Figure 1 shows a sectional drawing of an optoelectronic semi¬ conductor component 10 in schematic depiction. The optoelec¬ tronic semiconductor component 10 is designed for emitting light. The optoelectronic semiconductor component 10 may, for example, be designed for emitting light comprising a wave¬ length in the ultraviolet (UV) spectral range.
The optoelectronic semiconductor component 10 comprises a housing body 100. The housing body 100 may, for example, com- prise a plastic material or a ceramic material. The housing body 10 can, for example, be produced by a molding process.
The housing body 100 has a cavity 110. The cavity 110 com¬ prises a bottom 120 and sidewalls 130. The sidewalls 130 may be arranged perpendicular to the bottom 120 as depicted in figure 1. The sidewalls 130 may also be inclined such that the cavity 110 widens from the bottom 120 of the cavity 110 towards an opening of the cavity 110. The sidewalls 130 may also be curved or comprise another shape.
The optoelectronic semiconductor component 10 comprises an optoelectronic semiconductor chip 300. The optoelectronic semiconductor chip 300 is designed for emitting light. The optoelectronic semiconductor chip 300 may, for example, be designed for emitting light in the ultraviolet (UV) spectral range. The optoelectronic semiconductor chip 300 may, for ex¬ ample, be a light emitting diode chip.
The optoelectronic semiconductor chip 300 comprises an upper side 310 and a lower side 320 which is opposed to the upper side 310. Side faces 330 of the optoelectronic semiconductor chip 300 extend between the upper side 310 and the lower side 320 of the optoelectronic semiconductor chip 300.
The upper side 310 of the optoelectronic semiconductor chip 300 is a light-emitting face 315 of the optoelectronic semi¬ conductor chip 300. When operated, the optoelectronic semi- conductor chip 300 emits light at the upper side 310 of the optoelectronic semiconductor chip 300.
The optoelectronic semiconductor chip 300 comprises two or more electric contact areas for providing an electric voltage and electric current to the optoelectronic semiconductor chip 300. The electric contact areas may be arranged on the upper side 310 or on the lower side 320 of the optoelectronic semi¬ conductor chip 300. All electric contact pads of the optoe¬ lectronic semiconductor chip 300 may be arranged on the same side 310, 320 of the optoelectronic semiconductor chip 300 or on different sides 310, 320 of the optoelectronic semiconduc¬ tor chip 300.
The optoelectronic semiconductor chip 300 is arranged in the cavity 110 of the housing body 100 of the optoelectronic sem¬ iconductor component 10. The optoelectronic semiconductor chip 300 is arranged at the bottom 120 of the cavity 110 such that the lower side 320 of the optoelectronic semiconductor chip 300 faces the bottom 120 of the cavity 110. The optoe- lectronic semiconductor chip 300 may be a fixed to the bottom 120 of the cavity 110, for example by means of a solder or glue .
The electric contact areas of the optoelectronic semiconduc- tor chip 300 are electrically connected to electric contact pads of the housing body 100. These electric connections may, for example, be provided via bond wire or via solder connec¬ tions .
In addition to the optoelectronic semiconductor chip 300, a potting material 200 is arranged in the cavity 110 of the housing body 100 of the optoelectronic semiconductor compo- nent 10. The potting material 200 fills at least parts of the remaining space of the cavity 110 such that the optoelectron¬ ic semiconductor chip 300 is at least partially embedded in the potting material 200. The potting material 200 covers at least parts of the side faces 330 of the optoelectronic semiconductor chip 300. It is preferable that the side faces 330 of the optoelectronic sem¬ iconductor chip 300 are covered completely or almost com¬ pletely. The light-emitting face 315 formed at the upper side 310 of the optoelectronic semiconductor chip 300 is not cov¬ ered by the potting material 200. It is preferable that the potting material 200 fills the cavity 110 from the bottom 120 of the cavity 110 up to the upper side 310 of the optoelec¬ tronic semiconductor chip 300 such that the upper side 310 of the optoelectronic semiconductor chip 300 and the upper side of the potting material 200 arranged in the cavity 110 are flush .
The potting material 200 comprises a silicone 210 and parti- cles 220 embedded in the silicone 210. The silicone 210 is filled with the particles 220. The potting material 200 may also comprise another matrix material instead of or in addi¬ tion to the silicone 210. The particles 210 comprise aluminium. Advantageously, alumin¬ ium is highly reflective in a broad spectral range, in par¬ ticular in the ultraviolet spectral range. Consequently, the potting material 200 comprises a high reflectivity for light emitted by the optoelectronic semiconductor chip 300 of the optoelectronic semiconductor component 10.
The particles 120 of the potting material 200 may, for exam¬ ple, comprise spherical shapes or the shape of flakes. Spher-
ical particles can, for example, be produced by atomization. Particles comprising flake shapes may, for example, be pro¬ duced in a milling process.
The particles 220 of the potting material 200 may, for exam¬ ple, comprise an average particle size 230 between 0.5 ym and 50 ym. In particular, the particles 220 may, for example, comprise an average particle size 230 between 1 ym and 10 ym. The average particle size 230 may, for example, be 5 ym. The average particles size 230 may, for example, be a D5o value of the sizes of the particles 220.
The invention has been illustrated and described in greater detail on the basis of the preferred exemplary embodiments. Nevertheless, the invention is not restricted to the examples disclosed. Rather, other variations can be derived therefrom by a person skilled in the art, without departing from the scope of protection of the invention.
REFERENCE SYMBOLS optoelectronic semiconductor component housing body
cavity
bottom
side wall potting material
silicone
particle
particle size optoelectronic semiconductor chip upper side
light-emitting face
lower side
side face
Claims
An optoelectronic semiconductor component (10)
comprising a housing body (100) having a cavity (110), wherein a potting material (200) is arranged in the cavi¬ ty (110),
wherein the potting material (200) comprises embedded particles (220), the particles (220) comprising alumini¬ um.
The optoelectronic semiconductor component (10) of claim 1,
wherein an optoelectronic semiconductor chip (300) is arranged in the cavity (110),
wherein the optoelectronic semiconductor chip (300) is at least partially embedded in the potting material (200), wherein a light-emitting face (315) of the optoelectronic semiconductor chip (300) is not covered by the potting material (200) .
The optoelectronic semiconductor component (10) of claim 2,
wherein the optoelectronic semiconductor chip (300) is a light emitting diode chip.
The optoelectronic semiconductor component (10) of any one of claims 2 and 3,
wherein the optoelectronic semiconductor chip (300) is designed for emitting light in the ultraviolet spectral range .
The optoelectronic semiconductor component (10) of any one of the previous claims,
wherein the potting material (200) comprises a silicone (210) .
6. The optoelectronic semiconductor component (10) of any one of the previous claims,
wherein the particles (220) comprises an average particle size (230) between 0.5 ym and 50 ym, in particular between 1 ym and 10 ym.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2017/052814 WO2018145745A1 (en) | 2017-02-09 | 2017-02-09 | Optoelectronic semiconductor component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2017/052814 WO2018145745A1 (en) | 2017-02-09 | 2017-02-09 | Optoelectronic semiconductor component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018145745A1 true WO2018145745A1 (en) | 2018-08-16 |
Family
ID=57995209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2017/052814 WO2018145745A1 (en) | 2017-02-09 | 2017-02-09 | Optoelectronic semiconductor component |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2018145745A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013178469A1 (en) * | 2012-06-01 | 2013-12-05 | Osram Opto Semiconductors Gmbh | Optoelectronic module and method for producing an optoelectronic module |
| US20140312375A1 (en) * | 2013-04-23 | 2014-10-23 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic assembly and optoelectronic assembly |
| WO2015124621A1 (en) * | 2014-02-21 | 2015-08-27 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
-
2017
- 2017-02-09 WO PCT/EP2017/052814 patent/WO2018145745A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013178469A1 (en) * | 2012-06-01 | 2013-12-05 | Osram Opto Semiconductors Gmbh | Optoelectronic module and method for producing an optoelectronic module |
| US20140312375A1 (en) * | 2013-04-23 | 2014-10-23 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic assembly and optoelectronic assembly |
| WO2015124621A1 (en) * | 2014-02-21 | 2015-08-27 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
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