WO2018129642A1 - 一种GaN HEMT器件 - Google Patents

一种GaN HEMT器件 Download PDF

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Publication number
WO2018129642A1
WO2018129642A1 PCT/CN2017/070697 CN2017070697W WO2018129642A1 WO 2018129642 A1 WO2018129642 A1 WO 2018129642A1 CN 2017070697 W CN2017070697 W CN 2017070697W WO 2018129642 A1 WO2018129642 A1 WO 2018129642A1
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PCT/CN2017/070697
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陈一峰
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成都海威华芯科技有限公司
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Priority to PCT/CN2017/070697 priority Critical patent/WO2018129642A1/zh
Publication of WO2018129642A1 publication Critical patent/WO2018129642A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Definitions

  • the utility model relates to the technical field of semiconductors, in particular to a GaN HEMT device.
  • the third generation of semiconductors typically represent GaN, featuring high voltage, high efficiency, high power, and high operating temperature. Since the beginning of the 21st century, with the deepening of people's research, GaN devices have been gradually applied to power electronics, microwave communications and other fields, and the future application prospects are promising.
  • the power output capability of the device is significantly related to the breakdown voltage of the device. Increasing the breakdown voltage of the device improves the power output capability of the device.
  • the theoretical maximum output power is:
  • the first is to reduce the peak electric field inside the device, such as the field plate structure
  • the second is to reduce the leakage current.
  • the use of the back barrier structure is one of the effective methods to reduce the leakage current of the buffer layer: the forbidden band width and the breakdown voltage of AlGaN are higher than that of GaN, which is beneficial to solve the problem of premature breakdown of the device caused by excessive current of the buffer layer of the GaN-based HEMT device.
  • the introduction of the back barrier is beneficial to improve the limit of 2DEG.
  • the polarization direction is opposite to the polarization direction of the GaN HEMT device, that is, the simple back barrier reduces the 2DEG concentration of the GaN HEMT device, resulting in degradation of the performance of the GaN device.
  • the purpose of the present invention is to provide a GaN HEMT device, which can solve the above problems well.
  • the technical solution adopted by the present invention is to provide a GaN HEMT device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

一种GaN HEMT器件，从下至上依次为衬底(1)、成核层(2)、Al xGa 1-xN背势垒层(3)、GaN沟道层(4)、AlN隔离层(5)、δ掺杂层(6)及Al yGa 1-yN势垒层(7)，Al yGa 1-yN势垒层(7)上沉积源极(13)和漏极(8)形成欧姆接触，且Al yGa 1-yN势垒层(7)上生长具有张应力的介质钝化层(11)，在介质钝化层(11)上沉积栅极(12)；介质钝化层(11)上依次生长有具有张应力的第一介质层(9)和具有压应力的第二介质层(10)。采用背势垒结构，减小缓冲层泄露电流，从而提高击穿电压和可靠性，同时利用δ掺杂和生长张应力介质来补偿背势垒结构对二维电子气的影响，以确保GaN器件的高电压、高效率、高频率和高功率的性能。

Description

一种GaN HEMT器件 技术领域
本实用新型涉及半导体技术领域，具体涉及一种GaN HEMT器件。
背景技术
第三代半导体的典型代表GaN，具有高电压、高效率、高功率、高工作温度等特点。进入21世纪以来，随着人们研究的不断深入，GaN器件目前已逐步应用于电力电子、微波通信等领域，未来应用前景可期。
器件的功率输出能力，与器件击穿电压有显著关系，提高器件击穿电压可改善器件的功率输出能力，理论最大输出功率为：
Figure PCTCN2017070697-appb-000001
对GaN器件而言，提高GaN基HEMT器件的击穿电压，目前主要有两种思路：第一种是降低器件内部的峰值电场，如采用场板结构等，第二种是减小泄漏电流，尤其是缓冲层泄露电流。采用背势垒结构是减小缓冲层泄露电流有效方法之一：AlGaN的禁带宽度和击穿电压均高于GaN，有利于解决GaN基HEMT器件缓冲层电流过大导致器件提前击穿的问题，同时，背势垒的引入有利于提高2DEG的限域性。但由于背势垒的引入，其极化方向与GaN HEMT器件的极化方向相反，即单纯的背势垒会降低GaN HEMT器件的2DEG浓度，导致GaN器件的性能退化。
实用新型内容
本实用新型的目的在于提供一种GaN HEMT器件，该方法可以很好地解决以上问题。
为达到上述要求，本实用新型采取的技术方案是：提供一种GaN HEMT器

Claims (1)

  1. Figure PCTCN2017070697-appb-100001
PCT/CN2017/070697 2017-01-10 2017-01-10 一种GaN HEMT器件 WO2018129642A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/070697 WO2018129642A1 (zh) 2017-01-10 2017-01-10 一种GaN HEMT器件

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Application Number Priority Date Filing Date Title
PCT/CN2017/070697 WO2018129642A1 (zh) 2017-01-10 2017-01-10 一种GaN HEMT器件

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WO2018129642A1 true WO2018129642A1 (zh) 2018-07-19

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931230A (zh) * 2012-11-19 2013-02-13 中国科学院半导体研究所 铝镓氮做高阻层的双异质结氮化镓基hemt及制作方法
CN103489911A (zh) * 2013-09-06 2014-01-01 华为技术有限公司 一种GaN基HEMT器件及其制作方法
CN103681830A (zh) * 2012-09-11 2014-03-26 中国科学院微电子研究所 双沟道晶体管及其制备方法
CN103779208A (zh) * 2014-01-02 2014-05-07 中国电子科技集团公司第五十五研究所 一种低噪声GaN HEMT器件的制备方法
CN105226093A (zh) * 2015-11-11 2016-01-06 成都嘉石科技有限公司 GaN HEMT器件及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681830A (zh) * 2012-09-11 2014-03-26 中国科学院微电子研究所 双沟道晶体管及其制备方法
CN102931230A (zh) * 2012-11-19 2013-02-13 中国科学院半导体研究所 铝镓氮做高阻层的双异质结氮化镓基hemt及制作方法
CN103489911A (zh) * 2013-09-06 2014-01-01 华为技术有限公司 一种GaN基HEMT器件及其制作方法
CN103779208A (zh) * 2014-01-02 2014-05-07 中国电子科技集团公司第五十五研究所 一种低噪声GaN HEMT器件的制备方法
CN105226093A (zh) * 2015-11-11 2016-01-06 成都嘉石科技有限公司 GaN HEMT器件及其制作方法

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